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JP2011014744A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2011014744A
JP2011014744A JP2009158174A JP2009158174A JP2011014744A JP 2011014744 A JP2011014744 A JP 2011014744A JP 2009158174 A JP2009158174 A JP 2009158174A JP 2009158174 A JP2009158174 A JP 2009158174A JP 2011014744 A JP2011014744 A JP 2011014744A
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Japan
Prior art keywords
electrodes
wiring member
semiconductor device
igbt module
joined
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Pending
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JP2009158174A
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Japanese (ja)
Inventor
Masanori Sugiura
雅宣 杉浦
Hajime Kosugi
肇 小杉
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Toyota Motor Corp
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Toyota Motor Corp
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Priority to JP2009158174A priority Critical patent/JP2011014744A/en
Publication of JP2011014744A publication Critical patent/JP2011014744A/en
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Abstract

【課題】半導体素子と配線部材との接合寿命を向上させることのできる半導体装置を提供する。
【解決手段】電力用のＩＧＢＴモジュール１０の表面にその中心から側辺に向けて長方形状に延設された三列の電極１１〜１３にそれぞれ配線部材Ｗ１〜Ｗ３が接合される。ここでは特に、これら配線部材Ｗ１〜Ｗ３を、長方形状に延設された各電極１１〜１３の延設方向端部を含めて接合する。
【選択図】図１A semiconductor device capable of improving the bonding life of a semiconductor element and a wiring member is provided.
Wiring members W1 to W3 are joined to three rows of electrodes 11 to 13 extending in a rectangular shape from the center to a side of the surface of a power IGBT module 10, respectively. Here, in particular, these wiring members W1 to W3 are joined together including the extending direction ends of the respective electrodes 11 to 13 extending in a rectangular shape.
[Selection] Figure 1

Description

本発明は、電力の変換や各種電力制御等に用いられる電力用の半導体素子の表面電極にバスバーやボンディングワイヤ等の配線部材が電気的かつ機械的に接合されている半導体装置に関する。   The present invention relates to a semiconductor device in which a wiring member such as a bus bar or a bonding wire is electrically and mechanically joined to a surface electrode of a power semiconductor element used for power conversion, various power control, and the like.

こうした半導体装置としては、例えばハイブリッド車や電気自動車などにあって、車載バッテリから供給される直流電力を三相交流等に変換してモータ駆動用の電力変換を行うインバータ装置が知られている。図８に、従来一般に用いられているインバータ装置について、その回路構成の一例を示す。   As such a semiconductor device, for example, an inverter device that is used in a hybrid vehicle, an electric vehicle, or the like, converts DC power supplied from a vehicle-mounted battery into three-phase AC or the like and performs power conversion for driving a motor. FIG. 8 shows an example of the circuit configuration of an inverter device generally used in the past.

図８に示されるように、このインバータ装置における直流電源Ｂの正極母線である正極バスバーＢＢＰと負極母線である負極バスバーＢＢＮとの間には、直流電源Ｂから印加される直流電圧を平滑化する平滑コンデンサＣ及び同直流電圧を三相交流に変換するインバータ回路ＩＮＶが接続されている。インバータ回路ＩＮＶは、上アームを構成する３つのスイッチング素子（ＩＧＢＴ：絶縁ゲート・バイポーラ・トランジスタ）Ｔ１Ｕ、Ｔ３Ｖ、Ｔ５Ｗと、下アームを構成する３つのスイッチング素子Ｔ２Ｕ、Ｔ４Ｖ、Ｔ６Ｗとが三相ブリッジ接続されている。   As shown in FIG. 8, the DC voltage applied from the DC power supply B is smoothed between the positive bus bar BBP which is the positive bus of the DC power supply B and the negative bus bar BBN which is the negative bus in this inverter device. A smoothing capacitor C and an inverter circuit INV that converts the DC voltage into three-phase AC are connected. The inverter circuit INV is a three-phase bridge composed of three switching elements (IGBT: insulated gate bipolar transistor) T1U, T3V, T5W constituting the upper arm and three switching elements T2U, T4V, T6W constituting the lower arm. It is connected.

また、スイッチング素子Ｔ１Ｕ、Ｔ３Ｖ、Ｔ５Ｗの各エミッタ電極、及びスイッチング素子Ｔ２Ｕ、Ｔ４Ｖ、Ｔ６Ｗの各コレクタ電極の結線部であるＵ相出力電極、Ｖ相出力電極、Ｗ相出力電極は、それぞれ出力線ＯＷＵ、ＯＷＶ、ＯＷＷを介して三相交流モータＭのＵ相コイル、Ｖ相コイル、Ｗ相コイルに接続されている。   The U-phase output electrode, the V-phase output electrode, and the W-phase output electrode, which are connection portions of the emitter electrodes of the switching elements T1U, T3V, and T5W and the collector electrodes of the switching elements T2U, T4V, and T6W, are output lines. It is connected to the U-phase coil, V-phase coil, and W-phase coil of the three-phase AC motor M via OWW, OWV, and OWW.

ここで、上記各スイッチング素子Ｔ１Ｕ、Ｔ３Ｖ、Ｔ５Ｗ、及びスイッチング素子Ｔ２Ｕ、Ｔ４Ｖ、Ｔ６Ｗのエミッタ電極とコレクタ電極との間には、それぞれ整流素子である還流ダイオードＤ１Ｕ、Ｄ３Ｖ、Ｄ５Ｗ、及び還流ダイオードＤ２Ｕ、Ｄ４Ｖ、Ｄ６Ｗが逆並列に接続されている。   Here, free-wheeling diodes D1U, D3V, D5W, and free-wheeling diodes D2U, which are rectifier elements, are provided between the emitter electrodes and the collector electrodes of the switching elements T1U, T3V, T5W and the switching elements T2U, T4V, T6W, respectively. , D4V, D6W are connected in antiparallel.

こうして、Ｕ相アームとしての半導体装置ＳＤＵが、スイッチング素子Ｔ１Ｕ、Ｔ２Ｕ及び還流ダイオードＤ１Ｕ、Ｄ２Ｕによって構成されている。また、Ｖ相アームとしての半導体装置ＳＤＶが、スイッチング素子Ｔ３Ｖ、Ｔ４Ｖ及び還流ダイオードＤ３Ｖ、Ｄ４Ｖによって構成されている。また一方、Ｗ相アームとしての半導体装置ＳＤＷが、スイッチング素子Ｔ５Ｗ、Ｔ６Ｗ及び還流ダイオードＤ５Ｗ、Ｄ６Ｗによって構成されている。   Thus, the semiconductor device SDU as the U-phase arm is configured by the switching elements T1U and T2U and the free-wheeling diodes D1U and D2U. Further, the semiconductor device SDV as a V-phase arm is constituted by switching elements T3V and T4V and free-wheeling diodes D3V and D4V. On the other hand, a semiconductor device SDW as a W-phase arm is constituted by switching elements T5W and T6W and free-wheeling diodes D5W and D6W.

こうした半導体装置ＳＤＵ、ＳＤＶ、ＳＤＷは、一例として半導体装置ＳＤＵの構成例を図９に示すように、スイッチング素子Ｔ１Ｕ及びＴ２ＵからなるＩＧＢＴモジュール１０と還流ダイオードＤ１Ｕ及びＤ２Ｕからなるダイオードモジュール２０とによって構成されている。   Such a semiconductor device SDU, SDV, SDW is constituted by an IGBT module 10 composed of switching elements T1U and T2U and a diode module 20 composed of free-wheeling diodes D1U and D2U as shown in FIG. 9 as an example of the configuration of the semiconductor device SDU. Has been.

このうち、ＩＧＢＴモジュール１０では、上記スイッチング素子Ｔ１Ｕのエミッタ端子及びスイッチング素子Ｔ２Ｕのコレクタ端子に対して電気的に接続された電極１１を有している。そして、上記出力線ＯＷＵを構成する配線部材Ｗ１には、こうした電極１１が電気的に接続されるとともにダイオードモジュール２０の表面に設けられた還流ダイオードＤ２Ｕのアノード側の電極２１が接続され、これによってそれら電極１１と電極２１との電気的な接続が行なわれている。また、上記負極バスバーＢＢＮを構成する配線部材Ｗ２には、ＩＧＢＴモジュール１０を構成するスイッチング素子Ｔ２Ｕのエミッタ端子に電気
的に接続された電極１２とダイオードモジュール２０を構成する還流ダイオードＤ２Ｕのカソード側の電極２２とが接続され、これによってそれら電極１２と電極２２との電気的な接続が行なわれている。そして、上記正極バスバーＢＢＰを構成する配線部材Ｗ３には、ＩＧＢＴモジュール１０を構成するスイッチング素子Ｔ１Ｕのコレクタ端子に電気的に接続された電極１３とダイオードモジュール２０を構成する還流ダイオードＤ１Ｕのカソード側の電極２３とが接続され、これによってそれら電極１３と電極２３との電気的な接続が行なわれている。また、スイッチング素子Ｔ１Ｕ及びＴ２Ｕの各ゲート電極が、それぞれ電極１４及び１５に電気的に接続されている。 Among these, the IGBT module 10 has an electrode 11 electrically connected to the emitter terminal of the switching element T1U and the collector terminal of the switching element T2U. The electrode 11 is electrically connected to the wiring member W1 constituting the output line OWU, and the anode 21 of the free-wheeling diode D2U provided on the surface of the diode module 20 is connected to the wiring member W1. The electrodes 11 and 21 are electrically connected. Further, the wiring member W2 constituting the negative electrode bus bar BBN has an electrode 12 electrically connected to the emitter terminal of the switching element T2U constituting the IGBT module 10 and a cathode side of the free-wheeling diode D2U constituting the diode module 20. The electrodes 22 are connected to each other, whereby the electrodes 12 and 22 are electrically connected. The wiring member W3 constituting the positive electrode bus bar BBP is connected to the cathode 13 of the free-wheeling diode D1U constituting the diode module 20 and the electrode 13 electrically connected to the collector terminal of the switching element T1U constituting the IGBT module 10. The electrodes 23 are connected to each other, whereby the electrodes 13 and the electrodes 23 are electrically connected. The gate electrodes of the switching elements T1U and T2U are electrically connected to the electrodes 14 and 15, respectively.

ここで、こうした配線部材が用いられる半導体装置としては、例えば特許文献１や特許文献２に記載の半導体装置がある。このうち、特許文献１に記載の半導体装置では、厚さが０．１５ｍｍ〜０．６ｍｍ、幅が０．８４ｍｍ以上の断面角形をなす帯状の配線部材が半導体素子の電極に超音波接合されることにより、各半導体素子の電極間の電気的な接続が行なわれている。また、特許文献２に記載の半導体装置では、半導体素子の表面の電極の接合面に形成された凹部を有する配線部材が、その凹部内に向けて変形した状態で半導体素子の各電極に接合されることによって、各半導体素子の電極間の電気的な接続が行なわれている。   Here, as a semiconductor device in which such a wiring member is used, for example, there are semiconductor devices described in Patent Document 1 and Patent Document 2. Among these, in the semiconductor device described in Patent Document 1, a band-shaped wiring member having a square cross section having a thickness of 0.15 mm to 0.6 mm and a width of 0.84 mm or more is ultrasonically bonded to the electrode of the semiconductor element. As a result, electrical connection is made between the electrodes of each semiconductor element. Further, in the semiconductor device described in Patent Document 2, a wiring member having a recess formed on the bonding surface of the electrode on the surface of the semiconductor element is bonded to each electrode of the semiconductor element in a state of being deformed into the recess. Thus, electrical connection is made between the electrodes of each semiconductor element.

特開２００７−５４７４号公報JP 2007-5474 A 特開２００７−２２０７０４号公報JP 2007-220704 A

ところで、上記半導体装置は通常、図１０（ａ）及び（ｂ）にその一例を示すように、各配線部材Ｗ１〜Ｗ３の一端がＩＧＢＴモジュール１０の表面に長方形状に延設された各電極１１〜１３の中央付近で接合されるとともに、これら配線部材Ｗ１〜Ｗ３の途中で中継電極を兼ねるダイオードモジュール２０の各電極２１〜２３に接合されている。   By the way, in the semiconductor device, as shown in FIGS. 10A and 10B, one end of each wiring member W <b> 1 to W <b> 3 is usually extended in a rectangular shape on the surface of the IGBT module 10. Are joined to the respective electrodes 21 to 23 of the diode module 20 also serving as relay electrodes in the middle of the wiring members W1 to W3.

半導体装置としてこのような構成によれば、上記各配線部材Ｗ１〜Ｗ３によって各電極が電気的に接続されるようにはなる。しかし、上記インバータ装置のように、配線部材Ｗ１〜Ｗ３の接合対象が電力用の半導体素子のような場合には、その動作に伴う温度上昇が大きいことから、上記各電極１１〜１３にて接合された配線部材Ｗ１〜Ｗ３に対して加わる熱ストレスが増大することとなる。この結果、こうした熱ストレスの増大に起因して、半導体素子と配線部材との接合寿命が低下する等、半導体装置としての劣化を早期に招くことにもなりかねない。   According to such a configuration as a semiconductor device, the electrodes are electrically connected by the wiring members W1 to W3. However, when the wiring member W1 to W3 is joined to a power semiconductor element like the inverter device, the temperature rise accompanying the operation is large, so that the electrodes 11 to 13 are joined. Thermal stress applied to the formed wiring members W1 to W3 will increase. As a result, the increase in thermal stress may lead to early deterioration of the semiconductor device such as a decrease in the bonding life between the semiconductor element and the wiring member.

本発明は、こうした実情に鑑みてなされたものであり、その目的は、半導体素子と配線部材との接合寿命を向上させることのできる半導体装置を提供することにある。   The present invention has been made in view of such circumstances, and an object thereof is to provide a semiconductor device capable of improving the bonding life of a semiconductor element and a wiring member.

以下、上記課題を解決するための手段及びその作用効果について記載する。
請求項１に記載の発明は、電力用の半導体素子の表面にその中心から側辺に向けて長方形状に延設された１乃至複数の電極に配線部材が接合されてなる半導体装置において、前記配線部材は、前記長方形状に延設された電極の延設方向端部を含めて接合されてなることを要旨とする。 Hereinafter, means for solving the above-described problems and the effects thereof will be described.
The invention according to claim 1 is a semiconductor device in which a wiring member is joined to one or a plurality of electrodes extending in a rectangular shape from the center to the side of the surface of a power semiconductor element. The gist of the wiring member is that it is joined including the extending direction end of the rectangular electrode.

上記電力用の半導体素子は、その動作時において、熱源となる同半導体素子の中央部が温度上昇率の高い高温領域となる一方、同半導体素子の端部は通常、温度上昇率が低い。
そこで、上記構成によるように、半導体素子の上記長方形状に延設された電極の延設方向端部を含めて配線部材を接合することとすれば、上記温度上昇率が低い領域となる延設方向端部を含むかたちで配線部材と電極とが接合されることから、配線部材と電極との接合部に対する熱ストレスが低減されるようになる。これにより、こうした配線部材によって各電極間の電気的な接合を行なう上で、半導体素子と配線部材との接合寿命を向上させることができるようになる。 During the operation of the power semiconductor element, the central portion of the semiconductor element serving as a heat source becomes a high temperature region having a high temperature rise rate, while the end portion of the semiconductor element usually has a low temperature rise rate.
Therefore, as described above, if the wiring member is joined including the extending direction end of the rectangularly extending electrode of the semiconductor element, the extending portion becomes a region where the rate of temperature increase is low. Since the wiring member and the electrode are joined in a form including the direction end portion, thermal stress on the joined portion between the wiring member and the electrode is reduced. As a result, the bonding life between the semiconductor element and the wiring member can be improved when such a wiring member performs electrical bonding between the electrodes.

請求項２に記載の発明は、請求項１に記載の半導体装置前記配線部材は、前記長方形状に延設された電極の延設方向両端部に対して接合されてなることを要旨とする。
上記構成によるように、長方形状に延設された電極の延設方向両端部に対して配線部材を接合することとすれば、配線部材の接合対象となる電極のうち、特に上記温度上昇率が低い領域での接合が可能となる。これにより、配線部材に対する熱ストレスをより確実に低減することができるようになる。 The gist of the second aspect of the invention is that the wiring member of the semiconductor device according to the first aspect is joined to both ends of the rectangular extending electrode in the extending direction.
If the wiring member is bonded to both ends in the extending direction of the electrode extending in a rectangular shape as in the above configuration, among the electrodes to be bonded to the wiring member, the rate of temperature increase is particularly high. Bonding in a low region is possible. Thereby, the thermal stress with respect to a wiring member can be reduced more reliably.

請求項３に記載の発明は、請求項１または２に記載の半導体装置において、前記電極は前記半導体素子の表面に複数配列されてなり、前記配線部材は、それら電極のうち、前記半導体素子の角部に位置する部位を含めて接合されてなることを要旨とする。   According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, a plurality of the electrodes are arranged on the surface of the semiconductor element, and the wiring member includes the electrodes of the semiconductor element. The gist is that it is joined including the part located at the corner.

上記構成によれば、例えばスイッチング素子のように配線部材の接合対象となる電極を複数有する場合であれ、それら電極のうちの素子角部に位置する部位を含めて配線部材が接合されることによって、半導体素子の発熱の影響の最も少ない部位での各電極と配線部材との接合が可能となる。   According to the above configuration, for example, when there are a plurality of electrodes to be joined to the wiring member, such as a switching element, the wiring member is joined including the portion located at the element corner of the electrodes. In addition, it is possible to bond each electrode and the wiring member at a portion where the influence of heat generation of the semiconductor element is least.

請求項４に記載の発明は、請求項１〜３のいずれか一項に記載の半導体装置において、前記配線部材が、バスバーまたはボンディングワイヤであることを要旨とする。
この発明は、請求項４にかかる発明のように、配線部材としてバスバーまたはボンディングワイヤを用いる場合に特に有効であり、これらバスバー及びボンディングワイヤに対する熱ストレスの低減を通じて、半導体素子と接合部材との接合寿命の向上が図られるようになる。 The invention according to claim 4 is the semiconductor device according to any one of claims 1 to 3, wherein the wiring member is a bus bar or a bonding wire.
The present invention is particularly effective when a bus bar or a bonding wire is used as the wiring member as in the invention according to claim 4, and the bonding of the semiconductor element and the bonding member is achieved through the reduction of thermal stress on the bus bar and the bonding wire. The life is improved.

請求項５に記載の発明は、請求項１〜４のいずれか一項に記載の半導体装置において、前記配線部材が、アルミニウムからなることを要旨とする。
上記構成によるように、アルミニウムからなる配線部材を用いることとすれば、アルミニウムの硬度が低いことから、半導体素子と配線部材との接合寿命の向上はもとより、配線部材としての接合形状の自由度が高められるようになる。 The gist of the invention described in claim 5 is that, in the semiconductor device according to any one of claims 1 to 4, the wiring member is made of aluminum.
If the wiring member made of aluminum is used as in the above configuration, since the hardness of aluminum is low, not only the bonding life of the semiconductor element and the wiring member is improved, but also the degree of freedom of the bonding shape as the wiring member is increased. Can be enhanced.

請求項６に記載の発明は、請求項１〜４のいずれか一項に記載の半導体装置において、前記配線部材が、銅からなることを要旨とする。
上記構成によるように、銅からなる配線部材を用いることとすれば、銅の導電性が高いことから、半導体素子と配線部材との接合寿命の向上はもとより、配線部材としての導電性の向上が図られるようになる。 The gist of the invention described in claim 6 is that, in the semiconductor device according to any one of claims 1 to 4, the wiring member is made of copper.
If the wiring member made of copper is used as in the above configuration, since the conductivity of copper is high, not only the bonding life of the semiconductor element and the wiring member is improved, but also the conductivity as the wiring member is improved. Become figured.

本発明にかかる半導体装置の一実施の形態について、（ａ）は配線部材によるＩＧＢＴモジュールとダイオードモジュールとの接合態様を模式的に示す平面図、（ｂ）は同装置を側面から見た側面構造を模式的に示す側面図。1A is a plan view schematically showing a bonding mode of an IGBT module and a diode module by a wiring member, and FIG. 2B is a side view of the same device as viewed from the side. FIG. 同実施の形態の半導体装置を構成するＩＧＢＴモジュールの熱分布を示す平面図。The top view which shows the heat distribution of the IGBT module which comprises the semiconductor device of the embodiment. 配線部材が接合される半導体素子（ＩＧＢＴ）の素子温度変化量と、同配線部材と半導体素子との接合寿命との関係を示すグラフ。The graph which shows the relationship between the element temperature variation | change_quantity of the semiconductor element (IGBT) to which a wiring member is joined, and the joint lifetime of the same wiring member and a semiconductor element. 本発明にかかる半導体装置の他の実施の形態について、（ａ）は配線部材によるＩＧＢＴモジュールとダイオードモジュールとの接合態様を模式的に示す平面図、（ｂ）は同装置を側面から見た側面構造を模式的に示す側面図。2A is a plan view schematically showing a joining mode of an IGBT module and a diode module by a wiring member, and FIG. 2B is a side view of the semiconductor device according to another embodiment of the present invention. The side view which shows a structure typically. 本発明にかかる半導体装置の他の実施の形態について、（ａ）は配線部材によるＩＧＢＴモジュールとダイオードモジュールとの接合態様を模式的に示す平面図、（ｂ）は同装置を側面から見た側面構造を模式的に示す側面図。2A is a plan view schematically showing a joining mode of an IGBT module and a diode module by a wiring member, and FIG. 2B is a side view of the semiconductor device according to another embodiment of the present invention. The side view which shows a structure typically. 本発明にかかる半導体装置の他の実施の形態について、（ａ）は配線部材によるＩＧＢＴモジュールとダイオードモジュールとの接合態様を模式的に示す平面図、（ｂ）は同装置を側面から見た側面構造を模式的に示す側面図。2A is a plan view schematically showing a joining mode of an IGBT module and a diode module by a wiring member, and FIG. 2B is a side view of the semiconductor device according to another embodiment of the present invention. The side view which shows a structure typically. 本発明にかかる半導体装置の他の実施の形態について、（ａ）は配線部材によるＩＧＢＴモジュールとダイオードモジュールとの接合態様を模式的に示す平面図。（ｂ）は同装置を側面から見た側面構造を模式的に示す側面図。(A) is a top view which shows typically the joining aspect of the IGBT module and diode module by a wiring member about other embodiment of the semiconductor device concerning this invention. FIG. 4B is a side view schematically showing a side structure of the apparatus viewed from the side. 直流−三相交流変換を行うインバータ装置の一般的な構成例を示す回路図。The circuit diagram which shows the general structural example of the inverter apparatus which performs direct current | flow-three-phase alternating current conversion. インバータ装置の一部を構成する一般的な半導体装置の構成例としてＩＧＢＴモジュールとダイオードモジュールとの接続態様を模式的に示す等価回路図。The equivalent circuit diagram which shows typically the connection aspect of an IGBT module and a diode module as a structural example of the general semiconductor device which comprises some inverter apparatuses. 上記ＩＧＢＴモジュールとダイオードモジュールを有する従来の半導体装置について、（ａ）は配線部材によるＩＧＢＴモジュールとダイオードモジュールとの接合態様を模式的に示す平面図、（ｂ）は同装置を側面から見た側面構造を模式的に示す側面図。About the conventional semiconductor device which has the said IGBT module and a diode module, (a) is a top view which shows typically the joining aspect of the IGBT module and diode module by a wiring member, (b) is the side which looked at the same device from the side The side view which shows a structure typically.

図１に、本発明にかかる半導体装置を具現化した一実施の形態についてその構成を示す。
本実施の形態の半導体装置も、例えば先の図８及び図９に示したインバータ装置に用いられる半導体装置として構成されており、大きくは図１に示されるＩＧＢＴモジュール１０とダイオードモジュール２０とを有して構成されている。なお、図１（ａ）は同装置の平面構造を示しており、図１（ｂ）は同装置を側面から見た側面構造を示している。 FIG. 1 shows the configuration of an embodiment that embodies a semiconductor device according to the present invention.
The semiconductor device of the present embodiment is also configured as a semiconductor device used for the inverter device shown in FIGS. 8 and 9, for example, and largely includes the IGBT module 10 and the diode module 20 shown in FIG. Configured. 1A shows a planar structure of the apparatus, and FIG. 1B shows a side structure of the apparatus viewed from the side.

図１（ａ）に示すように、半導体装置を構成するＩＧＢＴモジュール１０の表面には、その中心から側辺に向けて長方形状に延設された三列の電極１１〜１３と前記ゲート電極に接続されている電極１４及び１５とが設けられている。こうしたＩＧＢＴモジュール１０の各電極のうち、特に電極１１〜１３には、ＩＧＢＴモジュール１０の角部に位置する部位を含めるかたちで各電極１１〜１３の延設方向両端部に例えばバスバー、ボンディングワイヤ、金属リボン等からなる配線部材Ｗ１〜Ｗ３が接合されている。こうして、各電極１１〜１３に接合された各配線部材Ｗ１〜Ｗ３は、各電極１１〜１３の延設方向に沿って配線されるとともに、その途中で中継電極を兼ねるダイオードモジュール２０の表面に設けられた各電極２１〜２３に接合されている。なお、上記配線部材Ｗ１〜Ｗ３としては、その接合形状の自由度を優先する上では硬度の低いアルミニウムが望ましく、配線部材としての導電率を優先する上では導電性の高い銅が望ましい。   As shown in FIG. 1A, on the surface of the IGBT module 10 constituting the semiconductor device, there are three rows of electrodes 11 to 13 extending in a rectangular shape from the center toward the side and the gate electrode. Connected electrodes 14 and 15 are provided. Among these electrodes of the IGBT module 10, in particular, the electrodes 11 to 13 include, for example, bus bars, bonding wires, and the like at both ends in the extending direction of the electrodes 11 to 13 so as to include portions located at the corners of the IGBT module 10. Wiring members W1 to W3 made of a metal ribbon or the like are joined. Thus, the wiring members W1 to W3 joined to the electrodes 11 to 13 are wired along the extending direction of the electrodes 11 to 13 and provided on the surface of the diode module 20 that also serves as a relay electrode in the middle. The electrodes 21 to 23 are joined. As the wiring members W1 to W3, aluminum having low hardness is desirable for giving priority to the degree of freedom of the joint shape, and copper having high conductivity is preferred for giving priority to the electrical conductivity as the wiring member.

こうして、同図１（ｂ）に示す側面構造からも明らかなように、各配線部材Ｗ１〜Ｗ３は、その一端がＩＧＢＴモジュール１０の各電極１１〜１３の上端に接合されている。また、これら各配線部材Ｗ１〜Ｗ３には、各電極１１〜１３との接合部から各電極１１〜１３の延設方向に沿って配線される途中において、ＩＧＢＴモジュール１０の中心部を避けるかたちで同モジュール１０の外側に一端屈曲されたのちに各電極１１〜１３の下端に接合されている。   Thus, as is apparent from the side structure shown in FIG. 1B, one end of each wiring member W <b> 1 to W <b> 3 is joined to the upper end of each electrode 11 to 13 of the IGBT module 10. In addition, the wiring members W1 to W3 avoid the central portion of the IGBT module 10 while being wired along the extending direction of the electrodes 11 to 13 from the joints with the electrodes 11 to 13. After being bent to the outside of the module 10, it is joined to the lower ends of the electrodes 11 to 13.

こうした各配線部材Ｗ１〜Ｗ３は、ＩＧＢＴモジュール１０の各電極１１〜１３との接合部からそれら電極１１〜１３の延設方向に沿ってさらに延びるとともに、その途中でダイオードモジュール２０の表面に設けられた三列の電極２１〜２３に接合されている。こ
うして、ＩＧＢＴモジュール１０の各電極１１〜１３とダイオードモジュール２０の各電極２１〜２３とが電気的に接続された半導体装置が構成される。 Each of these wiring members W1 to W3 further extends along the extending direction of the electrodes 11 to 13 from the junction with the electrodes 11 to 13 of the IGBT module 10, and is provided on the surface of the diode module 20 in the middle thereof. The three electrodes 21 to 23 are joined. Thus, a semiconductor device in which the electrodes 11 to 13 of the IGBT module 10 and the electrodes 21 to 23 of the diode module 20 are electrically connected is configured.

次に、こうした半導体装置を構成するＩＧＢＴモジュール１０の動作時における熱分布について図２を参照して説明する。
すなわちいま、先のインバータ装置の駆動に伴ってＩＧＢＴモジュール１０に電流が流れたとすると、ＩＧＢＴモジュール１０は全面を熱源としてその温度が上昇するようになる。そして、ＩＧＢＴモジュール１０の中心部から周辺にかけて熱抵抗が低くなるため中央部のみの温度が高くなる。このため、こうしたＩＧＢＴモジュール１０の熱分布を図２に示すように、同ＩＧＢＴモジュール１０の中心部が最も温度の高い高温領域となる。一方、こうしたＩＧＢＴモジュール１０の中心部との距離が離れるにつれて同モジュール１０の温度は低くなるため、ＩＧＢＴモジュール１０の角部が最も温度上昇率の低い領域となる。そこで、本実施の形態では、先の図１（ａ）、（ｂ）に示したように、上記各電極１１〜１３の延設方向両端部、すなわちＩＧＢＴモジュール１０の表面における温度上昇率の低い領域上に上記各配線部材Ｗ１〜Ｗ３を接合することとする。そしてこれにより、これら各電極１１〜１３と各配線部材Ｗ１〜Ｗ３との接合部では、ＩＧＢＴモジュール１０の発熱に伴う熱ストレスが低減されるようにしている。 Next, heat distribution during the operation of the IGBT module 10 constituting such a semiconductor device will be described with reference to FIG.
That is, now, assuming that a current flows through the IGBT module 10 as the previous inverter device is driven, the temperature of the IGBT module 10 rises with the entire surface as a heat source. And since thermal resistance becomes low from the center part of IGBT module 10 to the periphery, the temperature of only the center part becomes high. For this reason, as shown in FIG. 2 for the heat distribution of the IGBT module 10, the central portion of the IGBT module 10 is a high temperature region having the highest temperature. On the other hand, since the temperature of the module 10 becomes lower as the distance from the central part of the IGBT module 10 increases, the corner of the IGBT module 10 becomes the region where the temperature increase rate is the lowest. Therefore, in the present embodiment, as shown in FIGS. 1A and 1B, the temperature increase rate is low at both ends of the electrodes 11 to 13 in the extending direction, that is, at the surface of the IGBT module 10. The wiring members W1 to W3 are joined on the region. And thereby, the thermal stress accompanying the heat_generation | fever of the IGBT module 10 is reduced in the junction part of these each electrode 11-13 and each wiring member W1-W3.

次に、上記配線部材Ｗ１〜Ｗ３の接合対象とされる半導体素子の素子温度変化量ΔＴｊと配線部材Ｗ１〜Ｗ３及び半導体素子の接合寿命との関係を、図３を参照して説明する。
図３に示すように、上記配線部材Ｗ１〜Ｗ３に対して加えられる温度と同配線部材Ｗ１〜Ｗ３の接合寿命とは相関する関係にあり、配線部材Ｗ１〜Ｗ３の接合対象とされる半導体素子の素子温度変化量ΔＴｊが大きいほど、すなわち、配線部材Ｗ１〜Ｗ３に伝播する熱が高くなるほど、これに起因して配線部材Ｗ１〜Ｗ３の接合寿命も短くなる。一方、配線部材Ｗ１〜Ｗ３の接合対象とされる半導体素子の素子温度変化量ΔＴｊが小さいほど、すなわち、配線部材Ｗ１〜Ｗ３に伝播する熱が低くなるほど、これに起因して配線部材Ｗ１〜Ｗ３の接合寿命は長くなる。このため、先の図１０に示したように、配線部材Ｗ１〜Ｗ３が、ＩＧＢＴモジュール１０の各電極１１〜１３のうち高温領域となる同モジュール１０の中心付近に接合された場合には、その配線部材Ｗ１〜Ｗ３に伝播する熱も高くなり、これに起因して各電極１１〜１３に接合された配線部材Ｗ１〜Ｗ３の接合寿命は短くなる。 Next, the relationship between the element temperature variation ΔTj of the semiconductor element to be bonded to the wiring members W1 to W3 and the bonding lifetime of the wiring members W1 to W3 and the semiconductor element will be described with reference to FIG.
As shown in FIG. 3, the temperature applied to the wiring members W1 to W3 correlates with the bonding life of the wiring members W1 to W3, and the semiconductor element to be bonded to the wiring members W1 to W3. The larger the element temperature change amount ΔTj is, that is, the higher the heat propagated to the wiring members W1 to W3, the shorter the bonding life of the wiring members W1 to W3. On the other hand, the smaller the element temperature change ΔTj of the semiconductor elements to be joined to the wiring members W1 to W3, that is, the lower the heat propagated to the wiring members W1 to W3, the lower the wiring members W1 to W3. The bonding life of the is increased. Therefore, as shown in FIG. 10, when the wiring members W1 to W3 are joined to the vicinity of the center of the module 10 serving as a high temperature region among the electrodes 11 to 13 of the IGBT module 10, The heat propagated to the wiring members W1 to W3 is also increased, and due to this, the bonding life of the wiring members W1 to W3 bonded to the electrodes 11 to 13 is shortened.

一方、本実施の形態にかかる半導体装置として先の図１（ａ）、（ｂ）に示したように、配線部材Ｗ１〜Ｗ３がＩＧＢＴモジュール１０の各電極１１〜１３のうち温度上昇率の低い領域となる延設方向両端部に接合された場合には、同配線部材Ｗ１〜Ｗ３に伝播する熱も低くなることから、配線部材Ｗ１〜Ｗ３の接合寿命は長くなる。   On the other hand, as shown in FIGS. 1A and 1B as the semiconductor device according to the present embodiment, the wiring members W1 to W3 have a low temperature increase rate among the electrodes 11 to 13 of the IGBT module 10. When bonded to both ends in the extending direction, which is a region, the heat transmitted to the wiring members W1 to W3 is also reduced, so the bonding life of the wiring members W1 to W3 is extended.

このように、上記半導体装置では、ＩＧＢＴモジュール１０の各電極１１〜１３のうち、温度上昇率の低い領域となる各電極１１〜１３の延設方向両端部に配線部材Ｗ１〜Ｗ３が接合されたことによって、これら各電極１１〜１３と各配線部材Ｗ１〜Ｗ３との接合にかかる寿命の長期化、ひいては、上記半導体装置としての寿命の長期化が図られるようになる。   Thus, in the semiconductor device, among the electrodes 11 to 13 of the IGBT module 10, the wiring members W <b> 1 to W <b> 3 are joined to both ends in the extending direction of the electrodes 11 to 13 that are regions having a low temperature increase rate. As a result, the life of the electrodes 11 to 13 and the wiring members W1 to W3 can be prolonged, and as a result, the life of the semiconductor device can be prolonged.

以上説明したように、本実施の形態にかかる半導体装置によれば、以下に列記する効果が得られるようになる。
（１）上記各配線部材Ｗ１〜Ｗ３を、ＩＧＢＴモジュール１０の表面に長方形状に延設された各電極１１〜１３の延設方向両端部に対して接合することとした。これにより、ＩＧＢＴモジュール１０に各配線部材Ｗ１〜Ｗ３を接合する上で接合対象とされる各電極１１〜１３のうち特に温度上昇率の低い領域での各配線部材Ｗ１〜Ｗ３の接合が可能となり、ひいては、ＩＧＢＴモジュール１０と各配線部材Ｗ１〜Ｗ３との接合寿命の向上が図ら
れるようになる。 As described above, according to the semiconductor device of the present embodiment, the effects listed below can be obtained.
(1) The wiring members W1 to W3 are bonded to both ends of the electrodes 11 to 13 extending in a rectangular shape on the surface of the IGBT module 10 in the extending direction. Thereby, when joining each wiring member W1-W3 to the IGBT module 10, among the electrodes 11-13 used as joining object, joining of each wiring member W1-W3 in the area | region where a rate of temperature rise is especially low is attained. As a result, the joint life between the IGBT module 10 and each of the wiring members W1 to W3 can be improved.

（２）上記各配線部材Ｗ１〜Ｗ３を、接合対象とされる各電極１１〜１３のうちＩＧＢＴモジュール１０の角部に位置する部位を含めて接合することとした。これにより、接合対象とされる各電極１１〜１３のうち、より温度上昇率の低い領域でのＩＧＢＴモジュール１０と各配線部材Ｗ１〜Ｗ３との接合が担保されるようになり、ひいては、それら接合にかかる信頼性がより高められるようになる。   (2) The wiring members W1 to W3 are joined together including the parts located at the corners of the IGBT module 10 among the electrodes 11 to 13 to be joined. Thereby, joining of the IGBT module 10 and each wiring member W1-W3 in the area | region where a temperature increase rate is lower among each electrode 11-13 used as joining object will be ensured, and, by extension, those joining. The reliability of the system will be further improved.

（３）配線部材として、アルミニウムまたは銅によって形成された配線部材Ｗ１〜Ｗ３を用いることとした。これにより、これら配線部材Ｗ１〜Ｗ３によってＩＧＢＴモジュール１０とダイオードモジュール２０とを電気的に接続する上で、その接合形状の自由度や配線部材としての導電性の向上が図られるようになる。   (3) The wiring members W1 to W3 formed of aluminum or copper are used as the wiring members. Thereby, when electrically connecting the IGBT module 10 and the diode module 20 by these wiring members W1-W3, the freedom degree of the joining shape and the electroconductivity as a wiring member come to be achieved.

なお、上記実施の形態は、以下のような形態をもって実施することもできる。
・上記各配線部材Ｗ１〜Ｗ３を、ＩＧＢＴモジュール１０の角部に位置する部位を含めて上記各電極１１〜１３の延設方向両端に対して接合することとした。しかし、これら配線部材Ｗ１〜Ｗ３の接合位置は、各電極１１〜１３の延設方向両端であればよく、それら各電極１１〜１３の延設方向端部のうちのＩＧＢＴモジュール１０の角部以外の部位に対して各配線部材Ｗ１〜Ｗ３を接合するようにしてもよい。 In addition, the said embodiment can also be implemented with the following forms.
-Each said wiring member W1-W3 decided to join with respect to the extending direction both ends of each said electrodes 11-13 including the part located in the corner | angular part of the IGBT module 10. FIG. However, the joining positions of these wiring members W1 to W3 may be at both ends in the extending direction of the respective electrodes 11 to 13, and other than the corners of the IGBT module 10 among the extending direction ends of the respective electrodes 11 to 13. You may make it join each wiring member W1-W3 with respect to this site | part.

・上記配線部材Ｗ１〜Ｗ３を、ＩＧＢＴモジュール１０の各電極１１〜１３の延設方向両端部に対して接合することとした。これに限らず、先の図１（ａ）及び（ｂ）に対応する図として図４（ａ）及び（ｂ）に示すように、ＩＧＢＴモジュール１０の各電極１１〜１３の延設方向下端のみに対して各配線部材Ｗ１〜Ｗ３の一端を接合するようにしてもよい。また、同じく図５（ａ）及び（ｂ）に示すように、ＩＧＢＴモジュール１０の各電極１１〜１３の延設方向上端のみに対して各配線部材Ｗ１〜Ｗ３の一端を接合するようにしてもよい。また一方、同じく図６（ａ）及び（ｂ）に示すように、ＩＧＢＴモジュール１０の各電極１１及び１３にはその延設方向上端のみに対して配線部材Ｗ１及びＷ３の一端を接合するとともに、ＩＧＢＴモジュール１０の電極１２についてはその延設方向下端のみに対して配線部材Ｗ２の一端を接合するようにしてもよい。他方、これも同じく図７（ａ）及び（ｂ）に示すように、ＩＧＢＴモジュール１０の電極１２にはその延設方向上端のみに対して配線部材Ｗ２の一端を接合するとともに、ＩＧＢＴモジュール１０の電極１１及び１３についてはその延設方向下端のみに対して配線部材Ｗ１及びＷ３の一端を接合するようにしてもよい。   The wiring members W1 to W3 are joined to both ends in the extending direction of the electrodes 11 to 13 of the IGBT module 10. Not only this but the figure corresponding to previous FIG. 1 (a) and (b), as shown to FIG. 4 (a) and (b), only the extending direction lower end of each electrode 11-13 of the IGBT module 10 is shown. Alternatively, one end of each wiring member W1 to W3 may be joined. Similarly, as shown in FIGS. 5A and 5B, one end of each of the wiring members W1 to W3 is joined only to the upper end in the extending direction of each of the electrodes 11 to 13 of the IGBT module 10. Good. On the other hand, as shown in FIGS. 6A and 6B, each of the electrodes 11 and 13 of the IGBT module 10 is joined to one end of the wiring members W1 and W3 only with respect to the upper end in the extending direction, About the electrode 12 of the IGBT module 10, you may make it join the end of the wiring member W2 only with respect to the extending direction lower end. On the other hand, as shown in FIGS. 7A and 7B, one end of the wiring member W2 is joined to the electrode 12 of the IGBT module 10 only with respect to the upper end in the extending direction. For the electrodes 11 and 13, one end of the wiring members W1 and W3 may be joined only to the lower end in the extending direction.

要は、配線部材Ｗ１〜Ｗ３が上記長方形状に延設された各電極１１〜１３の延設方向端部を含めて接合されるものであればよく、これらに限定されるものではない。
・アルミニウムまたは銅からなる配線部材Ｗ１〜Ｗ３を用いることとしたが、例えば、アルミニウム合金や銅合金等からなる配線部材を用いることも可能であり、これらに限定されるものではない。要は、これら配線部材としては、上記ＩＧＢＴモジュール１０の各電極１１〜１３とダイオードモジュール２０の各電極２１〜２３との接合を通じて、接続対象とする各電極同士を電気的に接続可能なものであればよい。 In short, the wiring members W1 to W3 only need to be joined including the extending direction ends of the respective electrodes 11 to 13 extended in the above rectangular shape, and are not limited thereto.
Although the wiring members W1 to W3 made of aluminum or copper are used, for example, wiring members made of an aluminum alloy, a copper alloy, or the like can be used, and the invention is not limited thereto. In short, as these wiring members, the electrodes to be connected can be electrically connected to each other through bonding of the electrodes 11 to 13 of the IGBT module 10 and the electrodes 21 to 23 of the diode module 20. I just need it.

・上記配線部材の接合対象として、ＩＧＢＴモジュール１０の表面に設けられた三列の電極１１〜１３を有するインバータ用の半導体素子（ＩＧＢＴ）を用いることとした。しかし、上記配線部材の接合対象としては、この他、電力用トランジスタやダイオード等であってもよく、その表面に長方形状に延設された１乃至複数の電極を有するものであれば本発明の適用は可能である。   The semiconductor element for the inverter (IGBT) having three rows of electrodes 11 to 13 provided on the surface of the IGBT module 10 is used as an object to be joined to the wiring member. However, the wiring member may be a power transistor, a diode, or the like, as long as it has one or a plurality of electrodes extending in a rectangular shape on the surface thereof. Application is possible.

１０…ＩＧＢＴモジュール、１１〜１３…ＩＧＢＴモジュールの各電極、２０…ダイオードモジュール、２１〜２３…ダイオードモジュールの各電極、Ｂ…直流電源、ｃ…平滑コンデンサ、Ｍ…三相交流モータ、Ｗ１〜Ｗ３…配線部材（バスバー、ワイヤボンディング、リボン）、ＢＢＮ…負極バスバー、ＢＢＰ…正極バスバー、Ｄ１Ｕ、Ｄ２Ｕ、Ｄ３Ｖ、Ｄ５Ｗ…還流ダイオード、ＩＮＶ…インバータ回路、ＯＷＵ、ＯＷＶ、ＯＷＷ…出力線、ＳＤＵ、ＳＤＶ、ＳＤＷ…半導体装置、Ｔ１Ｕ、Ｔ２Ｕ、Ｔ３Ｖ、Ｔ５Ｗ…スイッチング素子。   DESCRIPTION OF SYMBOLS 10 ... IGBT module, 11-13 ... Each electrode of IGBT module, 20 ... Diode module, 21-23 ... Each electrode of a diode module, B ... DC power supply, c ... Smoothing capacitor, M ... Three-phase AC motor, W1-W3 ... Wiring member (bus bar, wire bonding, ribbon), BBN ... Negative bus bar, BBP ... Positive bus bar, D1U, D2U, D3V, D5W ... Freewheeling diode, INV ... Inverter circuit, OWU, OWV, OWW ... Output line, SDU, SDV , SDW: semiconductor device, T1U, T2U, T3V, T5W: switching elements.

Claims (6)

電力用の半導体素子の表面にその中心から側辺に向けて長方形状に延設された１乃至複数の電極に配線部材が接合されてなる半導体装置において、
前記配線部材は、前記長方形状に延設された電極の延設方向端部を含めて接合されてなる
ことを特徴とする半導体装置。 In a semiconductor device in which a wiring member is bonded to one or a plurality of electrodes extending in a rectangular shape from the center to the side of the surface of a power semiconductor element,
The said wiring member is joined including the extension direction edge part of the electrode extended in the said rectangular shape. The semiconductor device characterized by the above-mentioned. 前記配線部材は、前記長方形状に延設された電極の延設方向両端部に対して接合されてなる
請求項１に記載の半導体装置。 The semiconductor device according to claim 1, wherein the wiring member is joined to both end portions in the extending direction of the electrodes extending in the rectangular shape. 前記電極は前記半導体素子の表面に複数配列されてなり、前記配線部材は、それら電極のうち、前記半導体素子の角部に位置する部位を含めて接合されてなる
請求項１または２に記載の半導体装置。 The said electrode is formed in multiple numbers on the surface of the said semiconductor element, The said wiring member is joined including the site | part located in the corner | angular part of the said semiconductor element among these electrodes. Semiconductor device. 前記配線部材が、バスバーまたはボンディングワイヤである
請求項１〜３のいずれか一項に記載の半導体装置。 The semiconductor device according to claim 1, wherein the wiring member is a bus bar or a bonding wire. 前記配線部材が、アルミニウムからなる
請求項１〜４のいずれか一項に記載の半導体装置。 The semiconductor device according to claim 1, wherein the wiring member is made of aluminum. 前記配線部材が、銅からなる
請求項１〜４のいずれか一項に記載の半導体装置。 The semiconductor device according to claim 1, wherein the wiring member is made of copper.
JP2009158174A 2009-07-02 2009-07-02 Semiconductor device Pending JP2011014744A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013046824A1 (en) * 2011-09-30 2013-04-04 ローム株式会社 Semiconductor device
JP2015222759A (en) * 2014-05-22 2015-12-10 三菱電機株式会社 Power semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013046824A1 (en) * 2011-09-30 2013-04-04 ローム株式会社 Semiconductor device
US8970020B2 (en) 2011-09-30 2015-03-03 Rohm Co., Ltd. Semiconductor device
JPWO2013046824A1 (en) * 2011-09-30 2015-03-26 ローム株式会社 Semiconductor device
US9099331B2 (en) 2011-09-30 2015-08-04 Rohm Co., Ltd. Semiconductor device
JP2015222759A (en) * 2014-05-22 2015-12-10 三菱電機株式会社 Power semiconductor device

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