JP2011097096A - Plasma processing apparatus and method of forming oxide film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which uses an inductive coupling electrode for plasma generation to prevent etching of the inner wall surface of a plasma formation box. <P>SOLUTION: The plasma processing apparatus includes a cylindrical processing container 14 that can be vacuumized, a holding means 22 which is inserted in and pulled out of the processing container 14 while holding a plurality of workpieces W, a gas supply means 38 which supplies a gas into the processing container 14, and an activating means 60 which activates the gas with plasma. Using these components, the plasma processing apparatus carries out a plasma process on the workpieces W. The activating means 60 has a plasma forming box 64 disposed along the longitudinal direction of the processing container 14, an inductive coupling electrode 66 disposed along the plasma forming box 64, and a high-frequency power source 68 connected to the inductive coupling electrode 66. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a plasma processing apparatus for performing a film forming process, an etching process, or the like using plasma on a target object such as a semiconductor wafer.

  Generally, in order to manufacture a semiconductor integrated circuit, various processes such as a film formation process, an etching process, an oxidation process, a diffusion process, a modification process, and a natural oxide film removal process are performed on a semiconductor wafer made of a silicon substrate or the like Is done. When these processes are performed in a so-called batch-type heat treatment apparatus disclosed in Patent Document 1 or the like, first, a semiconductor wafer is removed from a cassette that can accommodate a plurality of, for example, about 25 semiconductor wafers. It is transferred to a vertical wafer boat and is supported in multiple stages. This wafer boat can place about 30 to 150 wafers, for example, depending on the wafer size. After the wafer boat is loaded (loaded) into the evacuable processing container from below, the inside of the processing container is kept airtight. Then, a predetermined heat treatment is performed while controlling various process conditions such as the flow rate of process gas, process pressure, and process temperature.

Here, when attention is paid to an insulating film or the like in the semiconductor manufacturing process as an example, generally, an SiO ₂ film is mainly used for this insulating film. However, recently, there is a strong demand for further integration and miniaturization of semiconductor integrated circuits. Under such circumstances, a silicon nitride film (Si ₃ N ₄ film) is used as an insulating film such as an oxidation resistant film, an impurity diffusion preventing film, and a sidewall film of a gate element. This silicon nitride film is very suitable as an insulating film as described above because it has a low impurity diffusion coefficient and a high oxidation barrier property.

  Furthermore, today, there is a further demand for higher operating speed. To meet this demand, for example, a silicon nitride film formed by adding boron (B) as an impurity has a very high dielectric constant. It has been proposed as an insulating film that can be reduced to significantly suppress parasitic capacitance (Patent Document 1).

  Further, in addition to the above-described requirements, there is a demand for a low temperature during the process processing. Correspondingly, a plasma processing apparatus using plasma that can promote the reaction even when the wafer temperature during the process is low is provided. It has been proposed (Patent Documents 2, 3, etc.).

  An example of the above-described plasma processing apparatus will be described. FIG. 25 is a schematic diagram showing an example of the above-described conventional vertical plasma processing apparatus, and FIG. 26 is a cross-sectional view showing a part of the plasma box in FIG. . In FIG. 25, a semiconductor wafer (not shown) is supported in multiple stages in a quartz cylindrical processing container 2 whose internal atmosphere can be evacuated. A plasma forming box 4 having a rectangular cross section along the length is provided. A gas nozzle 5 for flowing a gas activated by plasma is provided in the box 4. As shown also in FIG. 26, independent plasma electrodes 6 are provided along the height direction of the box on both outer sides of the partition wall of the plasma forming box 4, and plasma generation is performed between the plasma electrodes 6. For example, a high frequency power of 13.56 MHz is applied from the high frequency power source 8.

  As a result, the plasma electrodes 6 are parallel plate electrodes. When high frequency power is applied between the plasma electrodes 6, plasma is generated by capacitive coupling, and the plasma is supplied into the plasma box 4 by the plasma. The gas is activated and the reaction or the like is promoted by the formed active species. Such a plasma processing apparatus is generally referred to as a capacitively coupled plasma (CCP) plasma processing apparatus.

JP-A-6-275608 JP 2006-270016 A JP 2007-42823 A International Publication No. 2006/093136

  By the way, in the above-described plasma processing apparatus using the capacitively coupled plasma method, a reaction such as film formation can be promoted by plasma assistance, so that a desired plasma processing can be performed even if the wafer temperature is relatively low.

However, in this case, the inner wall made of quartz of the plasma forming box 4 is sputtered and etched by ions in the plasma accelerated by the potential difference applied to the ion sheath. There is a problem that the components adhere to the inner surface of the plasma forming box 4 and its peripheral portion and cause generation of particles.
In addition, even if an attempt is made to increase the electron density by increasing the power in order to increase the processing efficiency, the amount of particles generated increases rapidly when the large power is applied, which makes it difficult to improve the electron density. there were.

  In this case, it is conceivable to increase the frequency of the applied high-frequency power, thereby lowering the electron temperature to suppress etching and increase the radical density to promote the reaction. However, as the frequency increases, the high-frequency power supply itself becomes larger. There has been a problem that the cost of the apparatus has increased significantly. Therefore, as shown in Patent Document 4, a plasma processing apparatus including a discharge electrode using a one-turn U-shaped coil has been proposed, but it has been difficult to put into practical use.

  The present invention has been devised to pay attention to the above problems and to effectively solve them. An object of the present invention is to prevent etching of the wall surface in the plasma formation box by using an inductively coupled electrode for generating plasma, and to increase the electron density by enabling high power input. It is an object of the present invention to provide a plasma processing apparatus that can perform the above-described process.

  According to the first aspect of the present invention, there is provided a cylindrical processing container that can be evacuated, a holding means that holds a plurality of objects to be processed and is inserted into and removed from the processing container, and a gas that enters the processing container. In the plasma processing apparatus having a gas supply means for supplying gas and an activating means for activating the gas by plasma, the activating means comprises the processing container. A plasma forming box provided along a longitudinal direction of the plasma, an inductive coupling type electrode provided along the plasma forming box, and a high frequency power source connected to the inductive coupling type electrode It is a processing device.

  As described above, since the inductively coupled electrode is used along the plasma formation box as a part of the activation means for generating plasma, it is possible to prevent the wall surface in the plasma formation box from being etched and Electric power can be input to increase the electron density. In addition, the processing efficiency can be improved by increasing the electron density.

In this case, for example, as described in claim 2, the gas supply unit includes a gas nozzle for supplying the gas, and the gas nozzle is provided in the plasma forming box.
For example, as described in claim 3, the plasma forming box is provided outside the processing container along a side wall of the processing container.
For example, as described in claim 4, the plasma formation box is provided inside the processing container along a side wall of the processing container.
For example, as described in claim 5, the frequency of the high frequency power from the high frequency power source is in a range of 4 MHz to 27.12 MHz.
For example, as described in claim 6, an electrostatic shield is provided between the plasma forming box and the inductively coupled electrode.
For example, as described in claim 7, the inductively coupled electrode is provided along a side surface of the plasma forming box.

Further, for example, the inductively coupled electrode is folded at one end of the plasma forming box and provided along both side walls of the plasma forming box.
Further, for example, as described in claim 9, the inductively coupled electrode is provided by being wound half a turn, one turn or a plurality of turns along a side wall of the plasma forming box.

According to the plasma processing apparatus of the present invention, the following excellent effects can be exhibited.
As an inductive coupling type electrode is used along the plasma formation box as part of the activation means for generating the plasma, the wall surface in the plasma formation box is prevented from being etched and a large amount of power is applied. It is possible to increase the electron density. In addition, the processing efficiency can be improved by increasing the electron density.

Hereinafter, an embodiment of a plasma processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
<First Embodiment>
FIG. 1 is a longitudinal sectional view showing an example of a first embodiment of a plasma processing apparatus according to the present invention, FIG. 2 is a transverse sectional view showing a plasma processing apparatus (heating means is omitted), and FIG. FIG. 4 is a schematic perspective view mainly showing an inductively coupled electrode portion, and FIG. 4 is a block diagram showing a circuit including the inductively coupled electrode. In this case, dichlorosilane (DCS) is used as the silane gas, ammonia gas (NH ₃ ) is used as the nitriding gas, and the silicon nitride film (SiN) is formed by activating the NH ₃ gas with plasma. Let's take an example.

  As shown in the figure, the plasma processing apparatus 12 includes a cylindrical processing container 14 having a ceiling with a lower end opened. The entire processing container 14 is made of, for example, quartz, and a ceiling plate 16 made of quartz is provided and sealed on the ceiling in the processing container 14. Further, a manifold 18 formed in a cylindrical shape from, for example, stainless steel is connected to a lower end opening of the processing container 14 via a seal member 20 such as an O-ring. The manifold 18 may also be formed of quartz and integrated with the processing vessel 14 in some cases.

  The lower end of the processing vessel 14 is supported by the manifold 18, and a quartz wafer boat 22 as a holding means on which a plurality of semiconductor wafers W as processing objects are placed in multiple stages from below the manifold 18. Is made detachable so that it can be raised and lowered. In the case of the present embodiment, for example, about 50 to 150 wafers W having a diameter of 300 mm can be supported in multiple stages at substantially equal pitches on the support 22A of the wafer boat 22.

  The wafer boat 22 is placed on a table 26 via a quartz heat insulating cylinder 24, and the table 26 penetrates a lid portion 28 made of, for example, stainless steel that opens and closes the lower end opening of the manifold 18. It is supported on the rotating shaft 30. A magnetic fluid seal 32, for example, is interposed in the penetrating portion of the rotating shaft 30, and the rotating shaft 30 is rotatably supported while hermetically sealing. In addition, a sealing member 34 made of, for example, an O-ring is interposed between the peripheral portion of the lid portion 28 and the lower end portion of the manifold 18 to maintain the sealing performance in the processing container 14.

  The rotating shaft 30 is attached to the tip of an arm 36 supported by an elevating mechanism (not shown) such as a boat elevator, for example, and moves up and down integrally with the wafer boat 22 and the lid portion 28. 14 can be inserted and removed. Note that the table 26 may be fixed to the lid portion 28 and the wafer W may be processed without rotating the wafer boat 22.

In the manifold 18, for example, first gas supply means 38 that supplies ammonia (NH ₃ ) gas, for example, as a nitriding gas that is converted into plasma toward the inside of the processing container 14, and silane-based gas that is a film forming gas, for example, A second gas supply means 40 for supplying DCS (dichlorosilane) gas and a third gas supply means 42 for supplying an inert gas such as N ₂ gas as a purge gas are provided. Specifically, the first gas supply means 38 has a first gas nozzle 44 made of a quartz tube that extends inwardly through the side wall of the manifold 18. In the first gas nozzle 44, a plurality of (many) gas injection holes 44A are formed at predetermined intervals along the length direction to form distributed gas nozzles. Ammonia gas can be injected substantially uniformly in the horizontal direction.

  Similarly, the second gas supply means 40 also has a second gas nozzle 46 made of a quartz tube that extends inwardly through the side wall of the manifold 18. In the second gas nozzle 46, a plurality of (many) gas injection holes 46A are formed at predetermined intervals along the length direction to form distributed gas nozzles. DCS gas, which is a silane-based gas, can be jetted substantially uniformly in the horizontal direction.

Similarly, the third gas supply means 42 has a third gas nozzle 48 provided through the side wall of the manifold 18. Respective gas passages 52, 54 and 56 are connected to the nozzles 44, 46 and 48. The gas passages 52, 54, 56 are provided with on-off valves 52A, 54A, 56A and flow controllers 52B, 54B, 56B such as a mass flow controller, respectively, and NH ₃ gas, DCS gas, and N _{The two} gases can be supplied while controlling their flow rates.

  An activation means 60 is formed on one side of the processing container 14 to generate a gas along the height direction to activate the gas, and the processing container 14 facing the activation means 60 is formed. On the opposite side, there is provided an elongated exhaust port 62 formed by scraping the side wall of the processing vessel 14 in the vertical direction, for example, in order to evacuate the internal atmosphere. The activation means 60 includes a plasma formation box 64 provided along the longitudinal direction of the processing vessel 14, an inductive coupling type electrode 66 provided along the plasma formation box 64, and the inductive coupling type electrode 66. It is mainly composed of a high frequency power supply 68 connected thereto.

  Specifically, the plasma formation box 64 forms a vertically elongated opening 70 by scraping the side wall of the processing vessel 14 with a predetermined width along the vertical direction, and covers the opening 70 from the outside. In this way, a plasma partition wall 72 made of, for example, quartz, which has a U-shaped cross section and is elongated vertically, is hermetically welded to the outer wall of the container. That is, the plasma partition wall 72 includes a pair of opposing side walls 72A and 72B and a back wall 73 that connects one end side of the side walls 72A and 72B, that is, the outer peripheral side. The upper and lower ends of the side walls 72A and 72B are also closed by the partition walls.

  As a result, a plasma forming box 64 is formed integrally on the outside of the side wall of the processing container 14 so as to be recessed in a U-shaped cross-section and open and communicated with one side into the processing container 14. That is, the internal space of the plasma partition wall 72 is a plasma formation region, and is in a state of being integrally communicated with the processing container 14. The opening 70 is formed long enough in the vertical direction so as to cover all the wafers W held by the wafer boat 22 in the height direction.

  The inductively coupled electrode 66 is provided so as to make one round along the length direction (vertical direction) along the outer surface of the both side walls of the plasma partition wall 72. That is, the inductively coupled electrode 66 is folded back at the upper end of the plasma partition wall 72 as shown in FIG. 3, and is formed as a coil of approximately one turn. Further, as shown in FIG. 4, a matching circuit 74 for impedance matching is provided in the middle of the base end portion side of the inductive coupling type electrode 66, and the high-frequency power source 68 is further connected via a feeding line 76. It is connected to the. An adjustment signal 78 (see FIG. 4) is sent between the matching circuit 74 and the high frequency power source 68 to automatically adjust the impedance.

  In FIG. 4, a coaxial cable is used as the feed line 76. Further, the tip side of the matching circuit 74 is an electrode 66. One end of the inductive coupling type electrode 66 is grounded. Here, as the frequency of the high frequency power supply 68, for example, 13.56 MHz is used, but the frequency is not limited thereto, and a frequency within a range of 4 MHz to 27.12 MHz can be used.

  As a result, plasma is formed by the inductively coupled electromagnetic field generated in the plasma forming box 64 by the high frequency power supplied to the inductively coupled electrode 66. Here, the length of the plasma formation box 64 is about 1 m. The width H1 (see FIG. 2) is about 20 to 100 mm, for example, set to about 55 mm, and the thickness H2 is about 25 to 50 mm, for example, set to 35 mm. The inductively coupled electrode 66 is made of, for example, a nickel alloy, and has a thickness of about 3 to 5 mm, a width of about 2 to 10 mm, and a total length of about 4 to 5.5 m.

  Then, the first gas nozzle 44 extending upward in the processing container 14 is bent outward in the radial direction of the processing container 14 in the middle, and the innermost part of the plasma partition wall 72 (of the processing container 14). It is located at the farthest part from the center) and is provided to stand upward along the innermost part. Therefore, when the high frequency power supply 68 is turned on, the ammonia gas injected from each gas injection hole 44A of the first gas nozzle 44 is activated here and flows while diffusing toward the center of the processing container 14. It has become.

  An insulating protective cover (not shown) made of, for example, quartz is attached to the outside of the plasma partition wall 72 so as to cover it. In addition, a refrigerant passage (not shown) is provided inside the insulating protective cover, and the inductively coupled electrode 66 can be cooled by flowing a cooled nitrogen gas.

  The second gas nozzle 46 is provided upright on one side inside the processing container 14 of the opening 70 of the plasma partition wall 72, and the processing container is provided from each gas injection hole 46A provided in the second gas nozzle 46. The silane-based gas can be jetted toward the center direction of 14.

  On the other hand, an exhaust port cover member 80, which is formed in a U-shaped cross section made of quartz so as to cover the exhaust port 62 provided to face the opening 70, is attached by welding. The exhaust port cover member 80 extends upward along the side wall of the processing container 14 and is evacuated from a gas outlet 82 above the processing container 14 by a vacuum exhaust system provided with a vacuum pump (not shown). . A cylindrical heating means 84 for heating the processing container 14 and the wafer W therein is provided so as to surround the outer periphery of the processing container 14.

  Returning to FIG. 1, the overall operation of the plasma processing apparatus 12 is controlled, for example, the start and stop of gas supply, the power setting of the high frequency power supply 68, the on / off state, the process temperature and the process pressure. The setting or the like is performed by an apparatus control unit 86 made of a computer or the like, for example. The apparatus control unit 86 also controls the overall operation of the plasma processing apparatus 12. The apparatus control unit 86 stores a computer-readable program for controlling the supply and stop of the various gases, high-frequency on / off control, and operation of the entire apparatus, such as a floppy disk, a flash memory, A storage medium 88 such as a hard disk or a compact disk is included.

  Next, a plasma film formation method (so-called ALD [Atomic Layer Deposition] film formation) performed using the plasma processing apparatus configured as described above will be described. Here, the case where a silicon nitride film (SiN) is formed on the wafer surface using plasma intermittently at a low temperature will be described as an example. That is, the silane-based gas DCS gas and the nitriding gas ammonia gas are alternately supplied, and the nitriding gas is activated by plasma.

  First, a wafer boat 22 on which a large number of normal temperature wafers, for example, 50 to 150 wafers 300 mm in size are placed, is loaded into the processing container 14 that has been previously set at a predetermined temperature by being raised from below. The inside of the container is sealed by closing the lower end opening of the manifold 18 with the lid 28.

Then, the inside of the processing vessel 14 is evacuated and maintained at a predetermined process pressure, and the power supplied to the heating means 84 is increased to increase the wafer temperature and maintain the process temperature. The DCS gas and NH ₃ Gas is intermittently supplied alternately from the second gas supply means 40 and the first gas supply means 38. As a result, a silicon nitride film (SiN) is formed on the surface of the wafer W supported by the rotating wafer boat 22. At this time, when supplying NH ₃ gas alone, the high frequency power source (RF power source) 68 is turned on in the plasma forming box 64 of the activating means 60 for the entire supply time or for a part of the total supply time. Make the plasma stand up.

Specifically, NH ₃ gas is injected in the horizontal direction from each gas injection hole 44A of the first gas nozzle 44, and DCS gas is injected in the horizontal direction from each gas injection hole 46A of the second gas nozzle 46, Each gas reacts to form a silicon nitride film (SiN). In this case, the respective gases are not continuously supplied, but are supplied at the same timing or at different timings. Gases with shifted timings are alternately and repeatedly supplied with an intermittent period (purge period) between them, and thin films of silicon nitride films are repeatedly stacked one by one. When the NH ₃ gas is supplied, the high frequency power supply 68 is turned on to generate plasma, and the supplied NH ₃ gas is activated to produce active species and the like, and the reaction (decomposition) is promoted. The output of the high frequency power 68 at this time is in the range of 50 W to 3 kW, for example.

  Here, in the present invention, when the plasma is formed in the plasma forming box 64, that is, in the plasma forming region, the inductively coupled electrode 66 is used instead of the parallel plate type capacitively coupled electrode used in the conventional apparatus. Therefore, with respect to the plasma generated by the electromagnetic field generated by the electrode 66, the ion sheath potential difference is reduced, and as a result, the acceleration of ions in the plasma is reduced, so that the inner surface of the plasma partition wall 72 is etched by ion sputtering. Can be prevented. For this reason, generation | occurrence | production of the particle | grains used as the cause of the yield fall of a semiconductor product can be suppressed significantly.

  Further, by using the inductively coupled electrode 66 as described above, the radical density can be improved without increasing the high frequency power or the frequency, so that the plasma treatment can be performed efficiently. That is, since a large amount of power can be input, the electron density can be increased while suppressing the generation of particles, and as a result, the plasma processing efficiency can be improved.

  Here, a current distribution state in the plasma formation box 64 by the inductively coupled electrode 66 will be described. FIG. 5 is a diagram showing a current distribution state in the plasma formation box. FIG. 5A shows a current state when the inductively coupled electrode 66 is linearly extended, and FIG. 5B shows the inductively coupled electrode 66 at one end (upper end) of the plasma formation box 64. It is a figure which shows the state of the electric current when bent. In the drawing, “BTM” indicates a portion corresponding to the bottom portion of the wafer boat 22, and “TOP” indicates a portion corresponding to the upper portion of the wafer boat 22.

Here, the frequency of the high frequency power is 13.56 MHz (wavelength = about 22 m), the length of the inductively coupled electrode 66 is 4 m, and the length of the plasma forming box 64 is 1 m. One end of the inductively coupled electrode 66 is a ground end, and current is reflected at the ground end. In FIG. 5A, the thick line at the center indicates the inductively coupled electrode 66, and the right end is the ground end. The traveling wave i of the current is indicated by a solid line and has the following formula.
i = I ₀ sin (ωt−kx)
Here, I ₀ is amplitude, ω is angular velocity, t is time, k is a positive number, and x is a place in the horizontal direction in the figure.
The reflected wave i ′ of the current is expressed by the following formula.
i ′ = I ₀ sin (ωt + kx)

The standing wave I of the current at this time is indicated by a wavy line and has the following formula.
I = 2I ₀ sin ωt · coskx
Here, when the inductively coupled electrode 66 is bent at one end (right end) of the plasma forming box 64 as in this embodiment, the standing wave of the current is as shown in FIG. In the drawing, the thickness of the plasma formation box 64 is ignored. In this case, the variation of the induction electric field in the central axis 90 of the plasma formation box 64 is very small, about ± 2 to 3% between TOP and BTM.

This is because the inductively coupled electrode 66 is bent at one end (TOP side) of the plasma forming box 64 and arranged symmetrically on both sides of the box 64 so that the induced electric field at the central axis 90 of the box 64 is This is because the respective induction electric fields generated by the electrode 66 are superimposed.
Therefore, the inductively coupled electrode 66 is folded back to form a substantially one-turn coil and the induced electric field is superimposed, thereby reducing the drop of the electric field from the power supply side to the ground side and forming the plasma. The induced electric field in the box 64 can be made uniform.

  In the above embodiment, 13.56 MHz is used as the frequency of the high frequency power. However, the present invention is not limited to this, and a frequency in the range of 4 MHz to 27.12 MHz can be used as described above. When the frequency is lower than 4 MHz, there is a problem that the throughput is reduced due to a significant decrease in plasma density, and the electron temperature is increased, reducing the plasma damage that is the main purpose of the mechanism. It will be impossible to reach. On the other hand, when the frequency is higher than 27.12 MHz, the influence of the standing wave becomes remarkable due to the shortening of the high frequency, and it becomes difficult to generate a uniform plasma in the vertical direction of the plasma formation box 66.

  Also, here, the case where the inductively coupled electrode 66 is formed substantially one turn around the plasma forming box 64 has been described as an example, but the present invention is not limited to this, and a plurality of turns may be formed. A half turn may be formed along only one side of the plasma formation box 64 as shown in the schematic diagram of FIG.

  Furthermore, here, the plasma formation box 64 is provided on the outside of the processing container 14 along the height direction thereof. However, the present invention is not limited to this, and there is a sufficiently large space in the processing container 14. Alternatively, the plasma formation box 64 may be provided in the processing container. FIG. 7 is a cross-sectional view showing the processing container when the plasma forming box is provided in the processing container, and FIG. 8 is a perspective view showing the inductively coupled electrode at this time.

  As shown in FIG. 7, here, a plasma forming box 94 made of quartz having a slit 92 on the front surface along the height direction of its inner wall surface is provided in the processing container 14 by welding. A first gas nozzle 44 is provided in the plasma forming box 94. Further, as shown in FIG. 8, the inductively coupled electrode 66 inserted in the protective tube 96 made of quartz is reciprocated once in the vertical direction (one turn) in the plasma forming box 94. Provided. Also in this case, the same effect as the previous embodiment can be exhibited.

  In order to reduce capacitive coupling, an electrostatic shield may be provided corresponding to the inductively coupled electrode 66. This electrostatic shield is also called a Faraday shield. FIG. 9 is an enlarged cross-sectional view showing a portion of a plasma forming box provided with an electrostatic shield. FIG. 9A shows a first example of an electrostatic shield, and FIG. 9B shows a second example of the electrostatic shield. FIG. 9A is a plan view of the electrostatic shield. Here, the same components as those shown in FIG. 2 are denoted by the same reference numerals, and the description thereof is omitted.

  First, as shown in FIG. 9A, an electrostatic shield 100 that is grounded prior to forming the inductively coupled electrode 66 is provided on the side surface of the plasma forming box 64, that is, the side surface of the plasma partition wall 72, An insulating plate 102 is disposed thereon, and the inductively coupled electrode 66 is disposed on the insulating plate 102.

  The electrostatic shield 100 is disposed between the box 64 (side surface of the plasma partition wall 72) and the inductively coupled electrode 66 along the height direction of the plasma forming box 64. The electrostatic shield 100 can be formed of the same material as the inductively coupled electrode 66, for example. Specifically, the electrostatic shield 100 has a width of about 10 to 30 mm, for example, and is formed in an elongated rectangular shape. The electrostatic shield 100 is formed with rectangular opening slits 104 extending horizontally in a number of stages. The opening slit 104 has a vertical length of about 5 to 30 mm, a horizontal length of about 30 to 45 mm, and a pitch of about 7 to 35 mm.

Further, the electrostatic shields 100 arranged on the left and right sides of the plasma forming box 64 may or may not be connected to each other at the upper side, and may be grounded in any case. The insulating plate 102 can be made of, for example, quartz or alumina and has a length of about 2 to 5 mm.
As described above, by disposing the electrostatic shield 100, it is possible to further reduce the capacitive coupling due to the electric field while coupling the inductively coupled magnetic field created by the inductively coupled electrode 66 and the plasma. There is an advantage that etching damage to the inner wall of the plasma formation box 64 due to ions generated in the plasma can be reduced.

  Instead of the flat electrostatic shield 100 having the opening slit 104, an electrostatic shield 100 having a plurality of rod-shaped rod-shaped electrodes 106 may be used as shown in FIG. 9B. In the illustrated example, there are three rod-like electrodes 106A, 106B, 106C arranged in parallel in the vertical direction, and the central rod-like electrode 106B is disposed in a location-aligned manner with the inductively coupled electrode 66. The other rod-shaped electrodes 106A and 106C are arranged on both sides of the rod-shaped electrodes 106A and 106C so as to be separated by a small distance. In this case, the same effect as that shown in FIG. 9A can be exhibited. The number of the rod-like electrodes 106 is not particularly limited.

  In the above-described embodiment, the case where the silicon nitride film is formed using the plasma processing apparatus of the present invention has been described. However, the present invention is not limited to this, and the plasma processing apparatus of the present invention can be used when any thin film is formed. Can be used. For example, a silicon oxide film may be formed using the plasma processing apparatus. As an example of this point, for example, when a silicon oxide film is formed by an ALD (Atomic Layer Deposition) method on 50 to 150 wafers W having a diameter of 300 mm, the silicon source is 1 to 3 valent. An organic source of Si having an amino group can be used.

For example, as a monovalent source has Diisopropylaminosilane _{[SiH 3 (N (i-} C 3 H 7) 2) 2], the divalent source bis diethylamino silane _{[SiH 2 (N (C 2} H 5) 2 ₂ ], and trivalent aminosilane includes trisdimethylaminisilane: 3DMAS (SiH (N (CH ₃ ) ₂ ) ₃ ). Further, oxygen can be used as the oxidizing agent, and oxygen active species (oxygen radicals) generated by activating this oxygen with the ICP plasma according to the present invention are used.

As a specific example of the apparatus, in the plasma processing apparatus shown in FIG. 1, as the first gas supply means 38, O ₂ gas is supplied instead of NH ₃ gas, and oxygen active species are generated by ICP plasma. The second gas supply means 40 is configured to supply the organic source of Si instead of DCS.
A sequence in which the Si organic source and the plasma oxygen gas are alternately and intermittently supplied to the wafer W side as one cycle (from one organic source supply to the next organic source supply). A silicon oxide film having a desired film thickness is obtained by performing atomic layer growth.

  For example, if 150 to 1200 cycles are performed, a silicon oxide film with a thickness of 30 to 250 nm can be obtained. In this case, the film formation temperature is in the range of room temperature (about 27 ° C.) to about 300 ° C. In particular, when the above-mentioned monovalent diisopropylaminosilane is used, film formation can be performed at room temperature. Therefore, in this case, unlike the case where the silicon nitride film is formed first, it is possible to eliminate the need for the heating means 84 in the plasma processing apparatus 12.

  In addition, the above monovalent diisopropylaminosilane was used as an organic source of Si, and the film was formed with a plasma processing apparatus provided with an ICP-type electrode according to the present invention, when formed with a conventional plasma processing apparatus provided with a CCP bonding electrode. As a result of comparison experiments, the average amount of increase in each particle was 100 to 10 particles per wafer (total of 0.08 microns or more). Therefore, in the present invention, it can be understood that the particle suppression effect is particularly excellent. In this experiment, the high frequency power for generating oxygen plasma was compared at 250 watts.

[Modified Embodiment]
Next, a modified embodiment of the present invention will be described. In the drawings of the respective modified embodiments described below, the same components as those shown in FIGS. 1 to 9 are denoted by the same reference numerals, and the description thereof is omitted.

<First Modified Embodiment>
FIG. 10 is a schematic view showing a first modified embodiment of the present invention, which has a bent electrode. FIG. 10 (A) shows a perspective view, and FIG. 10 (B) shows a partially enlarged development view showing a state when both side walls are developed around the back wall.

  Here, the electrode 66 provided in the plasma formation box 64 is provided in a bent state by being bent at a plurality of locations on the way. Specifically, here, the electrode 66 is provided along the length direction of both side walls 72A and 72B, and this bent state is set to be a meandering state in which arcs are alternately connected in opposite directions. Thereby, the installation length of the electrode 66 with respect to the plasma formation box 64 can be lengthened.

  The radius R of the arc is, for example, in the range of about 5 to 50 mm, and the angle θ of the arc is set in the range of “π / 2 to 3π / 2”, here a semicircular arc, that is, “θ = π”. ing. The width W of the electrode 66 is about 2 to 10 mm as in the first embodiment. Here, the bending directions of the meandering of the electrode 66 facing between the side walls 72A and 72B are set to be opposite to each other. That is, it is the same direction in the developed view shown in FIG.

  When a high frequency current is passed through such an electrode 66, the electric field due to the high frequency is increased in the circular region 110 inside the arc of the electrode 66 (indicated by hatching in the drawing), and the plasma density is increased locally. It becomes a high-density plasma area. Since the region 110 is generated in a state of being dispersed at a predetermined distance in the plasma forming box 64, the plasma generation area can be enlarged as a whole, and the plasma density can be made uniform. . Of course, the same effects as those of the first embodiment are also shown here.

  In this case, the meandering bending direction of the electrode 66 facing between the side walls 72A and 72B may be set to the same direction. In FIG. 10A, the entire line between the high-frequency power source 68 (a matching circuit (not shown) is provided immediately downstream thereof) and the ground 112 indicates the electrode 66. The same applies to all the modified embodiments thereafter. An arrow 114 indicates the gas ejection direction, that is, the center direction of the wafer.

  The distance L1 between the wafer W and the electrode 66 closest to the wafer W is set to be 40 mm or more. The reason for this is to prevent the plasma leaking from the plasma forming box 64 from coming into direct contact with the wafer W and to prevent the wafer W from being damaged due to the plasma. The matter of the distance L1 is a matter that is similarly applied to the first embodiment and the modified embodiments described below.

<Second to Fourth Modified Embodiments>
Next, second to fourth modified embodiments will be described. FIG. 11 is a schematic view showing the second to fourth modified embodiments, which also have a bent electrode. FIG. 11 (A) shows a second modified embodiment, FIG. 11 (B) shows a third modified embodiment (along with a developed view), and FIG. 11 (C) shows a fourth modified embodiment.

  Also in the case of the second modified embodiment shown in FIG. 11A, the electrode 66 provided in the plasma formation box 64 is provided in a bent state by being bent at a plurality of locations on the way. Specifically, the bending state of the electrode 66 is such that either one of the side walls 72A and 72B, for example, 72A, passes through the back wall 73 and reaches the other side wall, for example 72B. This is a bent state in which the side wall 72B is bent and turned back, returns to the one side wall 72A through the back wall 73, and is bent and turned back on the one side wall.

In this case, in the illustrated example, the electrode 66 is bent at a right angle so as to be folded back. However, the present invention is not limited to this. For example, the electrode 66 may be bent at a circular arc.
This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Also in the case of the third modified embodiment shown in FIG. 11B, the electrode 66 provided in the plasma formation box 64 is provided in a bent state by being bent at a plurality of locations on the way. Specifically, the bending state of the electrode 66 is such that either one of the side walls 72A and 72B, for example, 72A, passes through the back wall 73 and reaches the other side wall, for example 72B. The side walls 72A and 72B are bent and folded with a small folding width at the side wall, returned to one side wall through the back wall 73, and bent and folded with a large folding width on the one side wall. It is the bending state repeated so that it may perform with respect to. That is, here, the folding width at the time of folding is repeated as small → large → small → large → small → large.

In this case, in the illustrated example, the electrode 66 is bent at a right angle so as to be folded back. However, the present invention is not limited to this. For example, the electrode 66 may be bent at a circular arc.
This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Also in the case of the fourth modified embodiment shown in FIG. 11C, the electrode 66 provided in the plasma forming box 64 is bent and provided at a plurality of locations on the way. Specifically, the electrode 66 is bent in such a manner that it extends from one end of the back wall 73 to one of the side walls 72A and 72B, for example, 72A, and is bent and folded. Is repeatedly bent to the other end of the back wall 73, extended from the other end of the back wall 73 to the other side wall, bent and folded, and bent again at the back wall 73. Then, the bent state is such that the folded state is repeated until one end of the back wall 73. That is, the electrode 66 is bent on one of the side walls 72A and 72B (including a part of the back wall) and then bent on the other side wall.

In this case, in the illustrated example, the electrode 66 is bent at a right angle so as to be folded back. However, the present invention is not limited to this. For example, the electrode 66 may be bent at a circular arc.
This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

<Fifth to seventh modified embodiments>
Next, fifth to seventh modified embodiments will be described. Each of the modified embodiments has a so-called hundred-legged electrode. FIG. 12 is a schematic diagram showing fifth to seventh modified embodiments, FIG. 12 (A) shows a fifth modified embodiment, FIG. 12 (B) shows a sixth modified embodiment, and FIG. ) Shows a seventh modified embodiment.

  First, in the case of the fifth modified embodiment shown in FIG. 12A, the electrode 66 includes the one-turn main electrode 120 formed on the side walls 72A and 72B along the length direction thereof, and the both sides. The walls 72 </ b> A and 72 </ b> B include a plurality of branch electrodes 122 branched from the main electrode 120 and extending toward the back wall 73. Specifically, the branch electrode 122 is disposed so as to be opposed to each other with the both side walls 72 </ b> A and 72 </ b> B interposed therebetween, and the tip thereof reaches the middle of the back wall 73. Here, the distribution of the plasma density can be controlled by appropriately selecting the pitch P1 of each branch electrode 122.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Also in the case of the sixth modified embodiment shown in FIG. 12B, the electrode 66 includes the main electrode 120 of one turn formed on the side walls 72A and 72B along the length direction, and the side walls 72A. , 72B and a plurality of branch electrodes 122 branched from the main electrode 120 and extending toward the back wall 73. Specifically, the branch electrodes 122 are alternately arranged with respect to the branch electrodes 122 provided on the opposite side walls, and their tips pass through the back wall 73 and are opposite side walls. It extends to.

Here, the distribution of the plasma density can be controlled by appropriately selecting the pitch P1 of each branch electrode 122.
This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Also in the case of the seventh modified embodiment shown in FIG. 12C, the electrode 66 includes the main electrode 120 of one turn formed on the side walls 72A and 72B along the length direction thereof, the side walls 72A, 72B includes a plurality of branch electrodes 122 branched from the main electrode 120 and extending toward the back wall 73. Specifically, the electrode 66 includes a one-turn main electrode 120 formed on the back wall 73 along the length direction thereof, and branches from the main electrode 120 in the direction of the side walls 72A and 72B. It consists of a plurality of branch electrodes 122 extending towards.

Here, the distribution of the plasma density can be controlled by appropriately selecting the pitch P1 of each branch electrode 122.
This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

<Eighth and ninth modified embodiments>
Next, eighth and ninth modified embodiments will be described. FIG. 13 is a schematic view showing the eighth and ninth modified embodiments, which have chain-type electrodes. FIG. 13A shows an eighth modified embodiment, and FIG. 13B shows a ninth modified embodiment.

  First, in the case of the eighth modified embodiment shown in FIG. 13A, the electrode 66 is formed by connecting a plurality of ring-shaped electrodes 124 in a partially cut state in series. Yes. Specifically, the electrode 66 includes a plurality of ring-shaped ring electrodes 124 that are partly cut out and arranged linearly along the longitudinal direction of the side walls 72A and 72B, and the arrangement direction. Connecting electrodes 126 provided to be spaced apart from the side walls so as to connect the ends of the ring-shaped electrodes 124 adjacent to each other and connect them in series as a whole.

  That is, the ring-shaped electrode 124 is disposed in contact with the side wall 72A or 72B in a state where a part of the circular ring is cut out, and both ends of the ring-shaped electrode 124 stand up from the side walls 72A and 72B. One end of the ring electrode 124 is connected to one end of the adjacent ring-shaped electrode 124 arranged, for example, in the downward direction by the connection electrode 126, and the other end is connected to the adjacent ring electrode 124, which is arranged in the upward direction. It is connected to one end. As a result, they are connected to each other in a substantially chain state. Although the diameter of this ring-shaped electrode 124 is not specifically limited, For example, it is about 10-65 mm.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Also in the case of the ninth modified embodiment shown in FIG. 13B, the electrode 66 is formed by connecting a plurality of ring-shaped electrodes 124 in a partially cut state in series. Specifically, the electrode 66 is partially cut away and is adjacent to the plurality of ring-shaped ring electrodes arranged along the length direction on the back wall 73 along the arrangement direction. A connection electrode 126 provided at a distance from the back wall 73 in order to connect the ends of the ring-shaped electrode 124 together in series.

  That is, here, the chain-like electrode 66 is provided on the back wall 73 instead of the side walls 72A and 72B. In this case, of the electrode 66, the electrode portion from the upper end of the plasma forming box 64 to the ground may be guided downward in a state of being separated from the side walls 72A and 72B, or along one of the side walls. It may be guided downward.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

<Tenth and Eleventh Modified Embodiments>
Next, tenth and eleventh modified embodiments will be described. FIG. 14 is a schematic view showing the tenth and eleventh modified embodiments, and here has a double reciprocating electrode. FIG. 14A shows a tenth modified embodiment, and FIG. 14B shows an eleventh modified embodiment.

  First, as shown in FIG. 14A, in the case of the tenth modified embodiment, the electrode 66 is provided for two reciprocations along the length direction of the side walls 72A and 72B. Specifically, the electrode 66 is wound around the side walls 72A and 72B twice along the length direction (two turns) for the two reciprocations.

  In other words, the winding is performed twice so that the winding is performed from one side wall 72A to the other side wall 72B along the length direction. In this case, the electrode of the first turn and the electrode of the second turn are not overlapped but set to be separated by a predetermined distance L2, for example, about 10 to 40 mm.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Next, as shown in FIG. 14B, also in the eleventh modified embodiment, the electrode 66 is provided for two reciprocations along the length direction of the side walls 72A and 72B. Specifically, the electrode 66 is disposed one reciprocally spaced along the length of one of the side walls 72A and 72B, for example, 72A, along the length direction. In the other side wall, for example, 72B, one reciprocation is provided along the length direction with a space therebetween, and the above two reciprocations are made as a whole.

  That is, here, the electrode 66 is first reciprocated on one side wall 72A, and then moved to the other side wall 72B, where it is once again reciprocated. In this case, the distance L3 between the electrodes 66 in each reciprocation is set to, for example, about 10 to 40 mm as in the case of L2 in FIG.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

<Twelfth to Fourteenth Modified Embodiments>
Next, twelfth to fourteenth modified embodiments will be described. FIG. 15 is a schematic view showing the twelfth to fourteenth modified embodiments, in which an electrode is provided on a single-sided side wall. FIG. 15A shows a twelfth modified embodiment, FIG. 15B shows a thirteenth modified embodiment, and FIG. 15C shows a fourteenth modified embodiment.

  First, as shown in FIG. 15A, in the case of the twelfth modified embodiment, the electrode 66 is provided on one of the side walls 72A and 72B. Specifically, the electrode 66 is provided on one of the side walls 72A and 72B, for example, 72A along the length direction thereof, and is in a half-turn state. Is connected to the high-frequency power source 68, and the upper end side of the electrode 66 is grounded.

In this case, since the electrode 66 is not a turn but a half turn, its operational effect is slightly reduced as compared to the case of the 1 turn, but the same operational effect as in the case of the first embodiment shown in FIG. Can do.
Further, in this case, the entire length of the electrode 66 is shortened by positioning the ground 112 at the upper end portion of the electrode 66, and accordingly, the electric field distribution generated along the length direction of the electrode 66 is reduced. The difference can be reduced and the plasma density can be improved. In this case, a high frequency power source 68 may be connected to the upper end of the electrode 66 and the lower end may be grounded.

  As shown in FIG. 15B, also in the thirteenth modified embodiment, the electrode 66 is provided on one of the side walls 72A and 72B. Specifically, the electrode 66 is provided to be reciprocated once along the length direction on one of the side walls 72A and 72B, for example, 72B. In this case, the distance L4 between the electrodes 66 when the reciprocating operation is performed is, for example, about 10 to 40 mm.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Furthermore, since the quartz which is the material of the side walls 72A and 72B defining the plasma forming box 64 is not interposed between the reciprocating electrodes 66, the capacitance can be reduced and the inductivity can be increased accordingly.

  Next, as shown in FIG. 15C, also in the case of the fourteenth modified embodiment, the electrode 66 is provided on one of the side walls 72A and 72B. Specifically, the electrode 66 is provided on one of the side walls 72A and 72B, for example, 72A along the length direction thereof, and is in a half-turn state. Is connected to the high-frequency power source 68, and the other end of the electrode 66 is separated from the side wall 72A and folded downward to be grounded. In this case, except that the ground 112 is positioned at the lower end, the structure is the same as that of the twelfth modified embodiment shown in FIG. 15A, and the operational effects thereof are the same as those of the twelfth modified embodiment.

<Fifteenth to seventeenth modified embodiments>
Next, fifteenth to seventeenth modified embodiments will be described. FIG. 16 is a schematic view showing the fifteenth to seventeenth modified embodiments, and here has a wide plate-type electrode. FIG. 16A shows a fifteenth modified embodiment, FIG. 16B shows a sixteenth modified embodiment, and FIG. 16C shows a seventeenth modified embodiment.

  First, as shown in FIG. 16A, in the case of the fifteenth modified embodiment, the electrode 66 has a wide electrode 128 having a predetermined width L5. Specifically, the wide electrode 128 is formed to wind around the side walls 72A and 72B for one turn along the length direction.

  The wide electrode 128 is set to be considerably wider than the width of the electrode 66 shown in the first modified embodiment shown in FIG. 3, and for example, the width L5 is set to 5 to 40 mm. The width L5 of the wide electrode 128 is preferably set to a length of 20% or more of the width of the plasma formation box 64 so that the plasma formation area is as large as possible. Specifically, the wide electrode 128 can be any one of a metal plate, a metal punching plate, and a metal mesh.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  As shown in FIG. 16B, also in the case of the sixteenth modified embodiment, the electrode 66 has a wide electrode 128 having a predetermined width L5. Specifically, the electrode 66 includes the main electrode 120 formed along one of the side walls 72A and 72B, for example, 72A, and the other side wall 72B along the length direction thereof. The main electrode 120 and the wide electrode 128 are connected to each other at the upper end. The lower end of the wide electrode 128 is grounded.

  The material and width of the wide electrode 128 are the same as in the case of FIG. In the case of this modified embodiment, since the width of the electrode on the side wall 72A side is smaller than that in the case of FIG. 16A, the plasma formation area is reduced accordingly, but it is still shown in FIG. The same effect as the case can be exhibited.

  Next, as shown in FIG. 16C, also in the case of the seventeenth modified embodiment, the electrode 66 has a wide electrode 128 having a predetermined width L5. Specifically, the electrode 66 includes the main electrode 120 formed on one side wall of the both side walls 72A and 72B, for example, 72A along the length direction thereof, and the length on the other side wall 72B. The main electrode and the wide ground electrode 128 are electrically separated from each other. The wide electrode 128 for grounding is formed along the vertical direction.

  The main electrode 120 is grounded at its upper end, and has the same structure as FIG. The wide electrode 128 for grounding is the same as the material and width of the wide electrode 128 shown in FIG.

  In this case, since the main electrode 120 and the wide electrode 128 for grounding are electrically separated, the inductivity is reduced correspondingly, but the same effect as that shown in FIG. It can be demonstrated.

<18th to 24th modified embodiments>
Next, eighteenth to twenty-fourth modified embodiments will be described. FIG. 17 is a schematic view showing the 18th to 21st modified embodiments, and FIG. 18 is a schematic view showing the 22nd to 24th modified embodiments. Here, the electrode has a branched electrode branched in the middle. 17A shows an eighteenth modified embodiment, FIG. 17B shows a nineteenth modified embodiment, FIG. 17C shows a twentieth modified embodiment, and FIG. 17D shows a twenty-first embodiment. FIG. 18A shows a twenty-second modified embodiment, FIG. 18B shows a twenty-third modified embodiment, and FIG. 18C shows a twenty-fourth modified embodiment.

  First, as shown in FIG. 17A, in the case of the eighteenth modified embodiment, the electrode 66 has a branch portion 130 that is branched into two main branch electrodes. Specifically, the electrode 66 is grounded to the high frequency power source 68 at one of the side walls 72A and 72B, for example, 72A at the center in the length direction, and the center portion. The main branch electrode 134A extends upward and the main branch electrode 134B extends downward, and both the main branch electrodes 134A and 134B are bent toward the other side wall 72B and The side walls 72B are joined to each other at the center in the length direction.

  That is, one main branch electrode 134A is folded back to the other side wall 72B side at the upper end portion of the plasma formation box 64, and the other main branch electrode 134B is turned to the other side wall 72B side at the lower end portion of the plasma formation box 64. Are respectively disposed along the length direction of the side wall 72B, and are connected again at the central portion in the height direction of the plasma forming box 64, and this portion is grounded.

  In the case of this modified embodiment, the same operational effects as those of the first embodiment shown in FIGS. 2 and 3 can be exhibited. In particular, since the length from the high-frequency power supply 68 to the ground 122 can be made very short, the voltage change in the length direction of each main branch electrode 134A, 134B can be reduced accordingly, and as a result, The uniformity of plasma density in the height (length) direction in the plasma formation box 64 can be improved.

  Next, as shown in FIG. 17B, also in the case of the nineteenth modified embodiment, the electrode 66 has a branch portion 130 that branches into two main branch electrodes in the middle. Specifically, the electrode 66 is connected to the high-frequency power source 68 at the lower end portion of the plasma forming box 64, and is branched into two main branch electrodes 134A and 134B with the lower end portion serving as a branch portion 130. The main branch electrodes 134A and 134B are provided along the length direction of the one side wall, for example, 72A, and are folded at the upper end portion as they are, and are provided at the other side wall 72B along the length direction to the lower end portion. Is grounded. That is, the two main branch electrodes 134A and 134B are provided by being wound in a state of one turn with the high frequency power supply 68 in common.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Next, as shown in FIG. 17C, also in the case of the twentieth modified embodiment, the electrode 66 has a branch portion 130 that is branched into two main branch electrodes. Specifically, the electrode 66 is connected to the high-frequency power source 68 at the lower end portion of the plasma forming box 64 and branched to two main branch electrodes 134A and 134B with the lower end portion serving as the branch portion 130. The main branch electrodes 134A and 134B are provided on the one side wall, for example, 72A along the length direction, and both main branch electrodes are joined to one at the upper end of the plasma forming box 64 and are folded back as they are. The other side wall 72B is provided along the longitudinal direction and grounded at the lower end.

  That is, in this modified embodiment, in the case shown in FIG. 17B, both main branch electrodes 134A and 134B are joined together at the upper end of the plasma formation box 64 to form one electrode. Also in this case, substantially the same effect as that shown in FIG. 17B can be exhibited.

  Next, as shown in FIG. 17D, also in the case of the twenty-first modified embodiment, the electrode 66 has a branch portion 130 that is branched into two main branch electrodes. Specifically, the electrode 66 is connected to the high-frequency power source 68 at the lower end portion of the plasma forming box 64 and branched to two main branch electrodes 134A and 134B with the lower end portion serving as the branch portion 130. The two main branch electrodes 134A and 134B are folded back to the opposite sides at the upper end of the plasma forming box 64 to be different from each other, respectively, on the side walls 72A and 72B different from each other. The side walls 72 </ b> A and 72 </ b> B are provided along the length direction and are grounded at the lower ends.

  That is, one main branch electrode 134A is provided along one side wall 72A, folded back to the opposite side at the upper end thereof, and provided along the other side wall 72B to form a one-turn electrode. The other main branch electrode 134B is provided along the other side wall 72B, folded back to the opposite side at the upper end thereof, and provided along the one side wall 72A to form a one-turn electrode. The main branch electrodes 134A and 134B are joined at the lower ends thereof and grounded.

  As described above, the electrode for two turns is formed as a whole, and in this modified embodiment, the effect of the electrode 66 relative to the plasma formation box 64 is of course the same effect as the first embodiment. Not only can the installation length be increased and the plasma density can be improved, but also the plasma formation area can be expanded and the plasma density can be made uniform.

  Next, as shown in FIG. 18A, also in the case of the twenty-second modified embodiment, the electrode 66 has a branch portion 130 that is branched into two main branch electrodes. Specifically, the electrode 66 is connected to the high-frequency power source 68 at the lower end portion of the plasma forming box 64 and branched to two main branch electrodes 134A and 134B with the lower end portion serving as the branch portion 130. The main branch electrodes 134A and 134B are provided on the side walls 72A and 72B, which are different from each other, along the length direction thereof, and the main branch electrodes 134A and 134B are joined to one at the upper end side of the plasma forming box 64 and folded as they are. The back wall 73 is provided along the length direction and grounded at the lower end.

  That is, in this case, the electrode 66 is formed for one turn on the side walls 72A and 72B, and is formed on the back wall 73 for a half turn. This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Next, as shown in FIG. 18B, also in the case of the twenty-third modified embodiment, the electrode 66 has a branch portion 130 that is branched into two main branch electrodes. Specifically, the electrode 66 is connected to the high-frequency power source 68 at the lower end portion of the plasma forming box 64 and branched to two main branch electrodes 134A and 134B with the lower end portion serving as the branch portion 130. The main branch electrodes 134A, 134B are spaced apart from the side walls 72A, 72B on the upper end side of the plasma forming box 64, respectively, on the side walls 72A, 72B different from each other. Grounded.

  That is, in this case, the main branch electrodes 134A and 134B branched into two are provided on the different side walls 72A and 72B along the length direction. Also in this case, substantially the same operational effects as those of the first modified embodiment shown in FIG. 2 can be exhibited. In addition, since the high-frequency currents flow in the two main branch electrodes 134A and 134B in the same direction here, the capacities of both the main branch electrodes 134A and 134B can be reduced.

  Next, as shown in FIG. 18C, also in the case of the twenty-fourth modified embodiment, the electrode 66 has a branch portion 130 that branches into two main branch electrodes in the middle. Specifically, the electrode 66 is connected to the high-frequency power source 68 at the lower end portion of the plasma forming box 64, and is branched into two main branch electrodes 134A and 134B with the lower end portion serving as the branch portion 130. Each of the side walls 72A, 72B is provided on one of the side walls 72A, 72B, for example, 72A with a predetermined distance L6 along the length thereof, and the main branch electrodes 134A, 134B are provided on the side wall 72A. Is separated from the side wall 72A on the upper end side thereof, folded back as it is, and extended downward to be grounded.

  That is, two main branch electrodes 134A and 134B are provided in parallel on the one side wall, for example, 72A along the length direction with a gap L6. In this case, the distance L6 is, for example, about 10 to 40 mm.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform. Further, as in the case of FIG. 18B, the capacitance of both the main branch electrodes 134A and 134B can be reduced here as well.

<25th Modified Embodiment>
Next, a twenty-fifth modified embodiment will be described. FIG. 19 is a schematic diagram showing a twenty-fifth modified embodiment. In the case of the twenty-fifth modified embodiment, the electrode 66 is formed one turn across the both side walls 72A and 72B, and the electrode 66 is formed at the center X1 in the height direction of the plasma forming box 64. Is bent in a curved shape so as to protrude most toward the center of the processing container 14 (see FIG. 2).

  That is, here, the one-turn electrode 66 has a curved shape so that the central portion X1 in the length direction is closest to the wafer W side, and the upper and lower ends of the electrode 66 are farthest away from the wafer W. For example, it is bent in an arc shape.

  Also in this case, the same effect as that of the first embodiment shown in FIGS. 2 and 3 can be exhibited. When plasma is generated in the plasma forming box 64, generally, the plasma density increases on the upper side and the lower side in the box 64, and the plasma tends to reach the wafer and cause plasma damage. Therefore, as described above, the generated plasma does not reach the wafer by moving the upper and lower portions of the electrode 66 away from the wafer W side, and as a result, the risk of causing plasma damage to the wafer is reduced. Can do. As a result, plasma can be uniformly formed in the plasma forming box 64 along the height direction thereof.

<Twenty-sixth modified embodiment>
Next, a twenty-sixth modified embodiment will be described. FIG. 20 is a schematic diagram showing a twenty-sixth modified embodiment. In the case of the twenty-sixth modified embodiment, the electrode 66 includes the main electrode 120 formed in one turn along the length direction of the both side walls 72A and 72B, and the both side walls from the middle of the main electrode 120. A plurality of bypass electrodes 136 that extend in the width direction of 72A and 72B and connect the main electrodes 66 of the both side walls 72A and 72B through the back wall 73 are formed.

This modified embodiment is very similar to the modified embodiment shown in FIG. 12 (A) or FIG. 12 (B), and the plasma in the plasma forming box 64 can be selected by appropriately selecting the pitch P2 of the bypass electrode 136. The density can be controlled.
This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

<Twenty-seventh modified embodiment>
Next, a twenty-seventh modified embodiment will be described. FIG. 21 is a schematic diagram showing a twenty-seventh modified embodiment. In the case of the twenty-seventh modified embodiment, the electrode 66 is connected to the high-frequency power source 68 at the lower end portion of the plasma forming box 64 and is provided on the back wall 73 along the length direction thereof. A main electrode 120 having a plurality of loop electrodes 138 extending in a loop shape on the walls 72A and 72B side, and two branches at the upper end of the plasma forming box 64, each having different lengths on different side walls 72A and 72B. The main branch electrodes 134A and 134B are provided along the vertical direction and are grounded at the lower end. In this case, substantially the same function and effect as that of the twenty-sixth modified embodiment shown in FIG. 20 in which the plurality of bypass electrodes 136 are provided can be exhibited.

<Twenty-eighth modified embodiment>
Next, a twenty-eighth modified embodiment will be described. FIG. 22 is a schematic diagram showing a twenty-eighth modified embodiment. In the case of the twenty-eighth modified embodiment, two high-frequency power supplies 68 (68A, 68B) are provided, and two electrodes 66 (66A, 66B) are also provided. Of the two electrodes 66A, 66B, One electrode 66A is provided on one of the side walls 72A and 72B, for example, 72A along the length direction thereof, and the lower end of the electrode 66A is connected to the two high-frequency power sources 68A and 68B. One of the high frequency power supplies, for example, 68A, is connected to the upper end side.

  The other electrode 66B is provided along the length direction of the other side wall 72B. The upper end portion of the electrode 66B is connected to the other high-frequency power source 68B and the lower end side is grounded. That is, the half-turn electrodes 66A and 66B are attached to the side walls 72A and 72B with the attachment positions of the high frequency power supplies 68A and 68B turned upside down. Also in this case, substantially the same operational effects as those of the first embodiment can be exhibited, and since the two high-frequency power sources 68A and 68B are used, a large amount of high-frequency power can be input. .

<Twenty-ninth Modified Embodiment>
Next, a twenty-ninth modified embodiment will be described. FIG. 23 is a schematic diagram showing a twenty-ninth modified embodiment. In the case of the twenty-ninth modified embodiment, a capacitor 140 is interposed in the middle of the electrode 66 in its length direction. That is, here, the capacitor 140 is interposed in the middle of the electrode 66 formed in a one-turn state as shown in FIGS. 2 and 3, that is, in the central portion in the length direction of the electrode 66 here.

  Also in this case, the same effect as the first embodiment shown in FIGS. 2 and 3 can be exhibited. Furthermore, by providing the capacitor 140 in the middle of the electrode 66 as described above, the phase difference between the high-frequency voltage and the current can be adjusted to provide a 90-degree phase difference therebetween. With such a circuit configuration, the circuit capacitance can be reduced.

  Further, the configuration in which the capacitor 140 is interposed is the main electrode 120, the wide electrode 128, the main branch electrodes 134A, 134B, etc. in the first embodiment, the first modified embodiment to the 28th modified embodiment described above. Also, it can be applied by interposing a capacitor 140 at a substantially central portion in the length direction.

<30th to 32nd Modified Embodiment>
Next, 30th to 32nd modified embodiments will be described. FIG. 24 is a schematic view showing the thirtieth to thirty-second modified embodiments, in which the electrodes have spiral electrodes wound in a spiral on the same plane. FIG. 24A shows a thirtieth modified embodiment, FIG. 24B shows a thirty-first modified embodiment, and FIG. 24C shows a thirty-second modified embodiment.

  First, as shown in FIG. 24A, in the case of the thirtieth modified embodiment, the electrode 66 has a spiral electrode 142 wound in a spiral shape. Specifically, the spiral electrode 142 is provided on one of the side walls 72A and 72B, for example, 72A.

  The spiral electrode 142 is spirally formed gradually from the center of the side wall 72A toward the periphery. In this case, the spiral shape is not an arc shape, but is a square spiral shape so as to match the square shape of the side wall 72A. The central portion of the spiral is connected to the high frequency power supply 68, and the tip portion of the spiral is grounded. Thus, the spiral electrode 142 is formed over substantially the entire side wall 72A.

  This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

  Next, as shown in FIG. 24B, also in the case of the thirty-first modified embodiment, the electrode 66 has a spiral electrode 142 wound in a spiral shape. Specifically, first, the plasma forming box 64 is formed in a curved shape in cross section here, and the spiral electrode 142 is provided on the curved surface. That is, the plasma forming box 64 has a curved cross section, in this case, the cross section is formed in an arc shape, and its outer surface is a curved surface 144. Then, the spiral electrode 142 is provided on the curved surface 144 as in the case of FIG. Also in this case, the same effect as that of the modified embodiment of FIG.

  Next, as shown in FIG. 24C, also in the case of the thirty-second modified embodiment, the electrode 66 has a spiral electrode 142 wound in a spiral shape. Specifically, the plasma forming box 64 has a curved cross section, and the electrode 66 is connected to the high-frequency power source 68 at the center of the curved surface, and two at the center. Branched to the spiral electrode 142 are both spirally wound in the same direction.

Here, as in the case of FIG. 24B, the plasma forming box 64 has a curved cross section, here a cross section is formed in an arc shape, and its outer surface is a curved surface 144. On the curved surface 144, the two spiral electrodes 142 are provided in a square spiral shape. The tips of the two spiral electrodes 142 are grounded.
This modified embodiment not only exhibits the same effects as the first embodiment, but also increases the installation length of the electrode 66 with respect to the plasma formation box 64, thereby improving the plasma density, as well as plasma formation. The area can be enlarged and the plasma density can be made uniform.

Although the plasma ALD film forming process has been described as an example of the plasma process here, the plasma ALD film forming process is not limited thereto, and plasma such as plasma CVD process, plasma modification process, plasma oxidation diffusion process, plasma sputtering process, plasma nitridation process, etc. The present invention can be applied to all processes used.
Although the semiconductor wafer is described as an example of the object to be processed here, the present invention is not limited thereto, and the present invention can be applied to a glass substrate, an LCD substrate, a ceramic substrate, and the like.

It is a longitudinal section lineblock diagram showing an example of a 1st embodiment of a plasma treatment apparatus concerning the present invention. It is a cross-sectional block diagram which shows a plasma processing apparatus (a heating means is abbreviate | omitted). It is a schematic perspective view which takes out and shows the part of the inductive coupling type electrode of a plasma processing apparatus. It is a block block diagram which shows the circuit containing an inductive coupling type electrode. It is a figure which shows the distribution state of the electric current in a plasma formation box. It is a schematic diagram which shows the electrode formed half turn along only one side of a plasma formation box. It is a cross-sectional view showing a processing container when a plasma formation box is provided in the processing container. It is a perspective view which shows the inductive coupling type electrode described in FIG. It is an expanded sectional view which shows the part of the plasma formation box which provided the electrostatic shield. It is a schematic diagram which shows the 1st modification embodiment of this invention. It is a schematic diagram which shows 2nd-4th modification embodiment. It is a schematic diagram which shows 5th-7th modification embodiment. It is a schematic diagram which shows 8th and 9th modification embodiment. It is a schematic diagram which shows 10th and 11th modification embodiment. It is a schematic diagram which shows 12th-14th modification embodiment. It is a schematic diagram which shows 15th-17th deformation | transformation embodiment. It is a schematic diagram which shows 18th-21st deformation | transformation embodiment. It is a schematic diagram which shows 22nd-24th modification embodiment. It is a mimetic diagram showing a 25th modification embodiment. It is a mimetic diagram showing a 26th modification embodiment. It is a mimetic diagram showing a 27th modification embodiment. It is a mimetic diagram showing a 28th modification embodiment. It is a mimetic diagram showing a 29th modification embodiment. It is a schematic diagram which shows 30th-32nd deformation | transformation embodiment. It is a schematic diagram which shows an example of the conventional vertical plasma processing apparatus. It is sectional drawing which shows a part of plasma box in FIG.

12 Plasma processing apparatus 14 Processing vessel 22 Wafer boat (holding means)
38 1st gas supply means 44 1st gas nozzle 60 Activation means 64 Plasma formation box 66 Inductive coupling type electrode 68 High frequency power supply 72 Plasma partition wall 84 Heating means W Semiconductor wafer (object to be processed)

Claims (54)

A cylindrical processing container made evacuated,
Holding means for holding a plurality of objects to be processed and being inserted into and removed from the processing container;
Gas supply means for supplying gas into the processing vessel;
In a plasma processing apparatus having an activating means for activating the gas with plasma and performing plasma processing on the object to be processed,
The activation means includes
A plasma forming box provided along the longitudinal direction of the processing vessel;
An inductively coupled electrode provided along the plasma forming box;
A plasma processing apparatus comprising a high frequency power source connected to the inductively coupled electrode. The plasma processing apparatus according to claim 1, wherein the gas supply unit includes a gas nozzle for supplying the gas, and the gas nozzle is provided in the plasma formation box. The plasma processing apparatus according to claim 1, wherein the plasma formation box is provided outside the processing container along a side wall of the processing container. The plasma processing apparatus according to claim 1, wherein the plasma forming box is provided inside the processing container along a side wall of the processing container. 5. The plasma processing apparatus according to claim 1, wherein the frequency of the high-frequency power from the high-frequency power source is in a range of 4 MHz to 27.12 MHz. 6. The plasma processing apparatus according to claim 1, wherein an electrostatic shield is provided between the plasma forming box and the inductively coupled electrode. The plasma processing apparatus according to claim 1, wherein the inductively coupled electrode is provided along a side surface of the plasma forming box. The plasma processing according to any one of claims 1 to 6, wherein the inductively coupled electrode is folded along one end of the plasma forming box and provided along both side walls of the plasma forming box. apparatus. The plasma processing according to any one of claims 1 to 6, wherein the inductively coupled electrode is provided by being wound half a turn, one turn or a plurality of turns along a side wall of the plasma forming box. apparatus. The plasma formation box is defined by a plasma partition wall having a U-shaped cross section, and the plasma partition wall includes a pair of opposing side walls and a back wall connecting one end side of the side walls. The plasma processing apparatus as described in any one of Claims 1 thru | or 6. The plasma processing apparatus according to claim 10, wherein the electrode is provided in a bent state by being bent at a plurality of positions on the way. The plasma processing apparatus according to claim 11, wherein the electrode is provided on the side wall along a length direction thereof, and the bent state is a meandering state in which arcs are alternately connected in opposite directions. The bent state of the electrode is that one of the side walls passes through the back wall from the side wall to the other side wall, is bent and folded at the other side wall, and passes through the back wall. The plasma processing apparatus according to claim 11, wherein the plasma processing apparatus is in a bent state in which the state of returning to the one side wall and bending and folding back at the one side wall is repeated. The bent state of the electrode is that one of the two side walls passes through the back wall to the other side wall, bends at the other side wall with a small folding width, and is folded back. It is a bent state which is repeated so as to return to one side wall through the wall and bend and bend back to the one side wall with a large folding width. Item 12. The plasma processing apparatus according to Item 11. The bent state of the electrode is a state in which the electrode extends from one end of the back wall to one of the side walls, is bent and folded, and is bent and folded again at the back wall. Repeatedly to the other end of the back wall, extending from the other end of the back wall to the other side wall, bent and folded, and repeatedly bent and folded back on the back wall to the one end of the back wall. The plasma processing apparatus according to claim 11, wherein the plasma processing apparatus is in a bent state. The electrode includes a one-turn main electrode formed on the side wall along the length direction thereof, and a plurality of branch electrodes branched from the main electrode on both side walls and extending toward the back wall. The plasma processing apparatus according to claim 10. The plasma processing apparatus according to claim 16, wherein the branch electrode is disposed so as to be opposed to each other with the both side walls interposed therebetween, and a tip of the branch electrode reaches partway along the back wall. The branch electrodes are alternately arranged with respect to the branch electrodes provided on the opposite side walls, and the tips of the branch electrodes pass through the back wall and extend to the opposite side walls. The plasma processing apparatus according to claim 16. The electrode includes a one-turn main electrode formed on the back wall along a length direction thereof, and a plurality of branch electrodes branched from the main electrode and extending toward the both side walls. The plasma processing apparatus according to claim 16. The plasma processing apparatus according to claim 10, wherein the electrode is formed by connecting a plurality of ring-shaped electrodes that are partially cut out in series. The electrodes include a plurality of ring-shaped ring electrodes that are partly cut out and arranged linearly along the longitudinal direction of the both side walls, and the ring-shaped electrodes adjacent to each other along the arrangement direction. 21. The plasma processing apparatus according to claim 20, further comprising a connection electrode provided to be spaced apart from the side wall in order to connect one end to each other in series connection. The electrodes are partially cut out, and a plurality of ring-shaped ring electrodes arranged along the length direction on the back wall, and one ends of the ring-shaped electrodes adjacent along the arrangement direction. 21. The plasma processing apparatus according to claim 20, further comprising a connection electrode provided to be separated from the back wall so as to be connected in series with each other. The plasma processing apparatus according to claim 10, wherein the electrode is provided for two reciprocations along a length direction of the both side walls. 24. The plasma processing apparatus according to claim 23, wherein the electrode is wound twice around the both side walls along the length direction so as to correspond to the two reciprocations. The electrodes are arranged to reciprocate along the length direction at one of the side walls of the both side walls and spaced apart from each other along the length direction. 24. The plasma processing apparatus according to claim 23, wherein one reciprocation is provided at an interval, and the two reciprocations are made as a whole. The electrode is formed in one turn over the both side walls, and the electrode is bent in a curved shape so that the central portion in the height direction of the plasma forming box protrudes most toward the center of the processing vessel. The plasma processing apparatus according to claim 10, wherein: The plasma processing apparatus according to claim 10, wherein the electrode is provided on any one of the side walls. The electrode is provided on one of the side walls along the length direction of the electrode and is in a half-turn state, and a lower end side of the electrode is connected to the high-frequency power source, 28. The plasma processing apparatus according to claim 27, wherein an upper end side is grounded. 28. The plasma processing apparatus according to claim 27, wherein the electrode is provided to be reciprocated once along the length direction on any one of the side walls. The electrode is provided on one of the side walls along the length direction of the electrode and is in a half-turn state, and a lower end side of the electrode is connected to the high-frequency power source, 28. The plasma processing apparatus according to claim 27, wherein the other end of the plasma processing apparatus is grounded by being folded downwardly from the side wall. The plasma processing apparatus according to claim 10, wherein the electrode includes a wide electrode having a predetermined width. 32. The plasma processing apparatus according to claim 31, wherein the wide electrode is formed so as to be wound one turn along the length direction across the both side walls. The electrode includes a main electrode formed along one of the side walls and the wide electrode formed along the length of the other side wall, and the main electrode. 32. The plasma processing apparatus according to claim 31, wherein the wide electrode and the wide electrode are connected to each other at an upper end. 34. The plasma processing apparatus according to claim 33, wherein a lower end portion of the wide electrode is grounded. The electrode has a main electrode formed on one of the side walls along the length direction, and the wide electrode for grounding formed on the other side wall along the length direction. 32. The plasma processing apparatus according to claim 31, wherein the main electrode and the wide electrode for grounding are electrically separated. 36. The plasma processing apparatus according to claim 32, wherein the wide electrode is formed of any one of a metal plate, a metal punching plate, and a metal mesh. The plasma processing apparatus according to claim 10, wherein the electrode has a branch portion branched into two main branch electrodes in the middle. The electrode is grounded to the high-frequency power source at a central portion in the length direction on any one of the side walls, and a main branch electrode extending upward and a main branch electrode extending downward at the central portion. A branch portion branched to a branch electrode, wherein both the main branch electrodes are bent toward each other side wall and joined to each other at a central portion in the length direction of the other side wall. The plasma processing apparatus according to claim 37. The electrode is connected to the high-frequency power source at the lower end of the plasma formation box, and is branched into two main branch electrodes with the lower end serving as a branch, the main branch electrode being the length of the one side wall 38. The plasma processing apparatus according to claim 37, wherein the plasma processing apparatus is provided along the vertical direction, is folded as it is at the upper end portion, is provided along the length direction of the other side wall, and is grounded at the lower end portion. The electrode is connected to the high-frequency power source at the lower end of the plasma forming box, and is branched into two main branch electrodes with the lower end serving as the branch, and the main branch electrode has a length on the one side wall. The two main branch electrodes are joined together at the upper end of the plasma forming box, folded back as they are, and provided along the longitudinal direction of the other side wall and grounded at the lower end. 38. The plasma processing apparatus according to claim 37, wherein: The electrode is connected to the high-frequency power source at the lower end of the plasma formation box, and is branched into two main branch electrodes with the lower end serving as the branch, each having a length on the different side wall. The two main branch electrodes are folded back at the upper ends of the plasma forming boxes as they are opposite to each other, provided on different side walls along the length direction, and grounded at the lower ends. 38. The plasma processing apparatus according to claim 37. The electrode is connected to the high-frequency power source at the lower end of the plasma formation box, and is branched into two main branch electrodes with the lower end serving as the branch, each having a length on the different side wall. The main branch electrode is joined to one at the upper end side of the plasma formation box and folded as it is, and is provided along the length direction on the back wall and grounded at the lower end. 38. The plasma processing apparatus according to claim 37. The electrode is connected to the high-frequency power source at a lower end of the plasma formation box, and is branched into two main branch electrodes with the lower end serving as the branch, and each of the electrodes has different lengths on the side walls. 38. The plasma processing apparatus according to claim 37, wherein each main branch electrode is spaced apart from each side wall and grounded on an upper end side of the plasma formation box. The electrode is connected to the high frequency power source at a lower end portion of the plasma forming box, and is branched into two main branch electrodes with the lower end portion serving as the branch portion, each of either of the side walls. The main branch electrodes are provided on the side walls at predetermined intervals along the length direction thereof, and the main branch electrodes are separated from the side walls at the upper end side of the side walls, folded back as they are, and extended downward to be grounded. 38. The plasma processing apparatus according to claim 37. The electrode includes a main electrode formed in one turn along a length direction of the both side walls, and extends in the width direction of the both side walls from the middle of the main electrode, and passes through the back wall and main parts of the both side walls. The plasma processing apparatus according to claim 10, comprising a plurality of bypass electrodes that connect the electrodes to each other. The electrode is
A main electrode connected to the high-frequency power source at a lower end of the plasma forming box, provided on the back wall along the length direction thereof, and a plurality of loop electrodes extending in a loop shape on the both side walls; ,
A main branching electrode branched into two at the upper end of the plasma forming box, each being provided on a different side wall along its length and grounded at the lower end;
The plasma processing apparatus according to claim 10, further comprising: The plasma processing apparatus according to claim 10, wherein the electrode includes a spiral electrode wound in a spiral shape. 48. The plasma processing apparatus of claim 47, wherein the spiral electrode is provided on any one of the side walls. 48. The plasma processing apparatus according to claim 47, wherein the plasma forming box has a curved cross section, and the spiral electrode is provided on the curved surface. The plasma forming box has a curved cross section, and the electrode is connected to the high frequency power source at the center of the curved surface, and is branched into two spiral electrodes at the center. 48. The plasma processing apparatus according to claim 47, wherein the plasma processing apparatus is provided by being spirally wound in the same direction. Two high-frequency power supplies are provided, and two electrodes are provided,
One of the two electrodes is provided along one of the side walls of the two side walls along the length direction, and the lower end of the electrode is one of the two high-frequency power supplies. Connected to the power supply and the upper end side is grounded,
11. The plasma according to claim 10, wherein the other electrode is provided along the length direction of the other side wall, the upper end portion of the electrode is connected to the other high-frequency power source, and the lower end side is grounded. Processing equipment. 52. The plasma processing apparatus according to claim 10, wherein a capacitor is interposed in the middle of the electrode in the length direction. 53. The distance between the object to be processed and the portion of the electrode closest to the object to be processed is set to be 40 mm or more. The plasma processing apparatus as described. The plasma processing apparatus according to any one of claims 1 to 53, wherein a heating unit for heating the object to be processed is provided on an outer periphery of the processing container.

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