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JP2011095282A - Apparatus and method for manufacturing radiological image conversion panel - Google Patents

Apparatus and method for manufacturing radiological image conversion panel Download PDF

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JP2011095282A
JP2011095282A JP2011033040A JP2011033040A JP2011095282A JP 2011095282 A JP2011095282 A JP 2011095282A JP 2011033040 A JP2011033040 A JP 2011033040A JP 2011033040 A JP2011033040 A JP 2011033040A JP 2011095282 A JP2011095282 A JP 2011095282A
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support
image conversion
conversion panel
phosphor
evaporation sources
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JP5136662B2 (en
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Yoshitami Kasai
惠民 笠井
Kuniaki Nakano
中野  邦昭
Hiroshi Isa
寛 伊佐
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Konica Minolta Medical and Graphic Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing a radiological image conversion panel, which obtains a radiological image having high sharpness by the uniform crystallinity of a stimulable phosphor. <P>SOLUTION: The apparatus 1 for manufacturing a radiological image conversion panel includes a vacuum container 2; a support holder 5 provided inside the vacuum vessel 2 and rotated in a horizontal direction; one support 4 held by the support holder 5 so that the center thereof coincides with the rotational center of the support holder; and three or more evaporation sources arranged, on at least one straight line from among the straight lines radially extending from a center line perpendicular to the support 4 in the horizontal direction, in a plane parallel to the support 4 at a prescribed separation distance from the center line to evaporate a phosphor on the support 4 by heating and evaporating the phosphor by a resistive heating method. The distance between the support 4 and each of the three or more evaporation sources is 100 to 1,500 mm. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、放射線画像変換パネルに係り、特に、輝尽性蛍光体層が形成された放射線画像変換パネルの製造装置及びこの放射線画像変換パネルの製造方法に関する。   The present invention relates to a radiation image conversion panel, and more particularly, to a manufacturing apparatus for a radiation image conversion panel in which a photostimulable phosphor layer is formed and a method for manufacturing the radiation image conversion panel.

従来、銀塩を使用しないで放射線画像を得る方法として、支持体上に輝尽性蛍光体層を形成した放射線画像変換パネルが開発されている。放射線画像変換パネルは、被写体を透過した放射線を輝尽性蛍光体層に吸収させ、被写体各部の放射線透過密度に対応する放射線エネルギーを蓄積することができる。その後、可視光線、赤外線などの電磁波(励起光)によって輝尽性蛍光体を時系列的に励起することにより、輝尽性蛍光体中に蓄積されている放射線エネルギーを輝尽発光として放出させる。そしてこの光の強弱による信号を、例えば光電変換して電気信号とし、ハロゲン化銀写真感光材料などの記録材料、CRTなどの表示装置上に可視像として再生することができる。   Conventionally, as a method for obtaining a radiation image without using a silver salt, a radiation image conversion panel in which a photostimulable phosphor layer is formed on a support has been developed. The radiation image conversion panel can cause the stimulable phosphor layer to absorb the radiation transmitted through the subject and accumulate radiation energy corresponding to the radiation transmission density of each part of the subject. Thereafter, the stimulable phosphor is excited in time series by electromagnetic waves (excitation light) such as visible light and infrared rays, thereby releasing the radiation energy accumulated in the stimulable phosphor as stimulated emission. The signal based on the intensity of light can be converted into an electric signal by photoelectric conversion, for example, and can be reproduced as a visible image on a recording material such as a silver halide photographic material or a display device such as a CRT.

このような放射線像変換パネルは、気相堆積法などにより支持体上に輝尽性蛍光体層を形成することによって製造される。輝尽性蛍光体には、CsBrなどのハロゲン化アルカリを母体にEuを付活したものが用いられ、特にEuを付活剤とすることで、従来不可能であったX線変換効率の向上が可能になるとされている。   Such a radiation image conversion panel is manufactured by forming a photostimulable phosphor layer on a support by a vapor deposition method or the like. As the stimulable phosphor, a material obtained by activating Eu based on an alkali halide such as CsBr is used. In particular, by using Eu as an activator, improvement of X-ray conversion efficiency, which has been impossible in the past, has been achieved. It is supposed to be possible.

また、付活剤濃度と輝度には相関関係があり、付活剤濃度が高いほど放射線画像の感度は高くなることが知られている。そして、画像読取時に励起光が輝尽性蛍光体層内に侵入して蓄積されたエネルギーを放出させることができる限度となる付活剤濃度において、放射線画像の感度は飽和する。したがって、付活剤濃度が不均一なほど感度ムラが現れる。   Further, it is known that there is a correlation between the activator concentration and the luminance, and the sensitivity of the radiographic image increases as the activator concentration increases. The sensitivity of the radiographic image is saturated at an activator concentration that allows the excitation light to enter the photostimulable phosphor layer and release the accumulated energy during image reading. Therefore, the nonuniformity of sensitivity appears as the activator concentration is non-uniform.

そこで、輝尽性蛍光体層における付活剤濃度を均一にして放射線画像の感度ムラを抑えるため、輝尽性蛍光体の母体成分と付活剤成分とを別々の蒸発源として、それぞれに電子線を照射して蒸発させる放射線画像変換パネル製造装置が知られている(特許文献1)。特許文献1の放射線画像変換パネル製造装置によれば、蒸着中に付活剤成分の蒸着速度が大きく変動した場合でも、電子線の電圧などを制御して付活剤成分の蒸着速度を調整することによって、付活剤濃度を均一にすることができる。   Therefore, in order to make the concentration of the activator in the stimulable phosphor layer uniform and suppress the sensitivity unevenness of the radiographic image, the matrix component and the activator component of the stimulable phosphor are used as separate evaporation sources, respectively, 2. Description of the Related Art A radiation image conversion panel manufacturing apparatus that irradiates and evaporates a line is known (Patent Document 1). According to the radiation image conversion panel manufacturing apparatus of Patent Document 1, even when the deposition rate of the activator component varies greatly during deposition, the voltage of the electron beam is controlled to adjust the deposition rate of the activator component. Thus, the activator concentration can be made uniform.

特開2003−194999号公報JP 2003-194999 A

しかし、特許文献1の放射線画像変換パネル製造装置では、付活剤成分の量が微量であるため、逆に輝尽性蛍光体の結晶が不均一となる場合があった。また、輝尽性蛍光体の母体成分と付活剤成分とを別々の蒸発源から同時に蒸発させても、付活剤成分が輝尽性蛍光体層に取り込まれないという問題があった。   However, in the radiation image conversion panel manufacturing apparatus of Patent Document 1, since the amount of the activator component is very small, the crystals of the photostimulable phosphor may be uneven. In addition, there is a problem in that the activator component is not taken into the stimulable phosphor layer even if the matrix component and the activator component of the stimulable phosphor are evaporated simultaneously from different evaporation sources.

また、付活剤濃度を均一とした場合でも、各々の蒸発源から蒸発した輝尽性蛍光体の結晶性が均一となるように蒸着しなければ輝尽性蛍光体層の感度ムラを低下させることはできないが、特許文献1においては、各々の蒸発源の配置や蒸発源と支持体との距離については何ら考慮されていなかった。さらに、蒸着効率や膜厚分布についても記載されていなかった。   In addition, even when the activator concentration is uniform, if the deposition is performed so that the crystallinity of the stimulable phosphor evaporated from each evaporation source is uniform, the sensitivity unevenness of the stimulable phosphor layer is reduced. However, in Patent Document 1, no consideration is given to the arrangement of each evaporation source and the distance between the evaporation source and the support. Furthermore, neither vapor deposition efficiency nor film thickness distribution was described.

本発明はこのような点に鑑みてなされたものであり、輝尽性蛍光体の結晶性を均一にすると共に、蒸着効率の向上と膜厚分布の向上とを両立させて、感度ムラがなく鮮鋭性の高い放射線画像が得られる放射線画像変換パネルの製造装置及び放射線画像変換パネルの製造方法を提供することを目的とする。   The present invention has been made in view of such a point, and while making the crystallinity of the photostimulable phosphor uniform, it is possible to achieve both improvement in deposition efficiency and improvement in film thickness distribution, and there is no sensitivity unevenness. An object of the present invention is to provide a radiographic image conversion panel manufacturing apparatus and a radiographic image conversion panel manufacturing method capable of obtaining a highly sharp radiographic image.

このような課題を解決するために請求項1の発明は、放射線画像変換パネルの製造装置であって、真空容器と、前記真空容器内に設けられ、水平方向に回転する支持体ホルダと、前記支持体ホルダに、その中心が前記支持体ホルダの回転中心と一致するように保持された1つの支持体と、前記支持体に垂直な中心線から所定の距離を離して、前記支持体と平行な平面において、前記中心線から水平方向に放射状に延びる直線のうち少なくとも一の直線上に配置され、下記一般式(1)により表される蛍光体を各々が含み、前記蛍光体を抵抗加熱法により加熱蒸発させて前記支持体に前記蛍光体を蒸着させる3個以上の蒸発源と、を備え、前記支持体と前記3個以上の蒸発源の各々との距離は100mm〜1500mmであることを特徴とする。
一般式(1)
M1X・aM2X'2・bM3X"3:eA
[式中、M1はLi、Na、K、Rb及びCsの各原子から選ばれる少なくとも1種のアルカリ金属原子であり、M2はBe、Mg、Ca、Sr、Ba、Zn、Cd、Cu及びNiの各原子から選ばれる少なくとも1種の二価金属原子であり、M3はSc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Al、Ga及びInの各原子から選ばれる少なくとも1種の三価金属原子であり、X、X'、X"はF、Cl、Br及びIの各原子から選ばれる少なくとも1種のハロゲン原子であり、AはEu、Tb、In、Ce、Tm、Dy、Pr、Ho、Nd、Yb、Er、Gd、Lu、Sm、Y、Tl、Na、Ag、Cu及びMgの各原子から選ばれる少なくとも1種の金属原子であり、また、a、b、eはそれぞれ0≦a<0.5、0≦b<0.5、0<e<1.0の範囲の数値を表す。]
In order to solve such a problem, the invention of claim 1 is a manufacturing apparatus of a radiation image conversion panel, comprising a vacuum vessel, a support holder provided in the vacuum vessel and rotating in a horizontal direction, One support that is held by the support holder so that its center coincides with the center of rotation of the support holder, and a predetermined distance from a center line perpendicular to the support, and parallel to the support Each of the phosphors arranged on at least one of the straight lines extending radially from the center line in a horizontal plane and represented by the following general formula (1). And three or more evaporation sources for vaporizing the phosphor on the support by heating and evaporating, and the distance between the support and each of the three or more evaporation sources is 100 mm to 1500 mm Characterize
General formula (1)
M1X, aM2X'2, bM3X "3: eA
[Wherein M1 is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M2 is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and Ni. And M3 is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb. , Lu, Al, Ga, and In, at least one trivalent metal atom selected from X, X ′, and X ″ are at least one selected from F, Cl, Br, and I atoms. A is a halogen atom, and A is derived from each atom of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. At least one metal atom selected, and a b, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]

請求項1の発明によれば、3個以上の蒸発源を設けることによって各蒸発源の蒸気流が重なり合う部分が整流化され、支持体の表面に蒸着する蛍光体の結晶性は均一になる。また、3個以上の蒸発源を支持体に垂直な中心線から所定の距離を離して、前記支持体と平行な平面において、前記中心線から水平方向に放射状に延びる直線のうち少なくとも一の直線上に配置することから、3個以上の蒸発源は互いに狭い間隔で配置されることになり、蒸発源の蒸気流は支持体のうち各蒸発源の上部付近に蒸着するため、蒸発源と支持体との距離を近づけても蛍光体の特性は劣化しない。したがって、蒸発源と支持体との距離を近づけて蒸着効率を高めることができる。こうした傾向は、多数の蒸着源を設けるほど顕著になる。また、3個以上の蒸発源を直線上に配置することから、支持体の表面における膜厚分布を一定にすることができる。これによって、蛍光体層の感度ムラを低下させて、放射線画像変換パネルから得られる放射線画像の鮮鋭性を向上させることができる。   According to the invention of claim 1, by providing three or more evaporation sources, the overlapping portions of the vapor flows of the respective evaporation sources are rectified, and the crystallinity of the phosphor deposited on the surface of the support becomes uniform. Further, at least one of straight lines extending radially from the center line in a plane parallel to the support with a predetermined distance from three or more evaporation sources at a predetermined distance from the center line perpendicular to the support. Since three or more evaporation sources are arranged at a narrow interval from each other, the vapor flow of the evaporation source is deposited near the upper part of each evaporation source in the support. Even when the distance to the body is reduced, the characteristics of the phosphor do not deteriorate. Therefore, the evaporation efficiency can be increased by reducing the distance between the evaporation source and the support. Such a tendency becomes more prominent as a large number of vapor deposition sources are provided. In addition, since three or more evaporation sources are arranged on a straight line, the film thickness distribution on the surface of the support can be made constant. Thereby, the sensitivity nonuniformity of a fluorescent substance layer can be reduced and the sharpness of the radiographic image obtained from a radiographic image conversion panel can be improved.

また、本発明においては各蒸発源の間隔が狭く、蒸発源の蒸気流は支持体のうち各蒸発源の上部付近に蒸着するので、支持体に到達する蛍光体の入射角のばらつきは少なく、結晶性は均一となる。このような傾向も多数の蒸着源を設けるほど顕著になる。ここで、入射角とは、支持体のうち蛍光体層が形成される面と蛍光体の入射方向とが成す鋭角θをいう。   Further, in the present invention, the interval between the evaporation sources is narrow, and the vapor flow of the evaporation source is deposited near the upper part of each evaporation source in the support, so that the variation in the incident angle of the phosphor reaching the support is small, Crystallinity becomes uniform. Such a tendency becomes more prominent as a larger number of vapor deposition sources are provided. Here, the incident angle refers to an acute angle θ formed by the surface of the support on which the phosphor layer is formed and the incident direction of the phosphor.

請求項2の発明は、請求項1に記載の放射線画像変換パネルの製造装置であって、前記支持体ホルダは、前記蒸着源から前記蛍光体を蒸着させる際に前記支持体を回転させる支持体回転機構を備えていることを特徴とする。   Invention of Claim 2 is a manufacturing apparatus of the radiation image conversion panel of Claim 1, Comprising: The said support body holder rotates the said support body when vapor-depositing the said fluorescent substance from the said vapor deposition source. A rotation mechanism is provided.

請求項2の発明によれば、支持体回転機構によって支持体を回転しながら蛍光体の蒸着を行うことによって、支持体の表面全体に均一に蛍光体を蒸着させることができる。   According to the second aspect of the present invention, the phosphor can be uniformly deposited on the entire surface of the support by performing the vapor deposition of the phosphor while rotating the support by the support rotating mechanism.

請求項3の発明は、請求項1又は2に記載の放射線画像変換パネルの製造装置であって、前記支持体に垂直な中心線と前記3個以上の蒸発源の各々との間隔は100mm〜1500mmであることを特徴とする。   Invention of Claim 3 is a manufacturing apparatus of the radiographic image conversion panel of Claim 1 or 2, Comprising: The space | interval of the centerline perpendicular | vertical to the said support body and each of the said 3 or more evaporation sources is 100 mm- It is 1500 mm.

請求項4の発明は、放射線画像変換パネルの製造方法であって、真空容器内において、水平方向に回転する支持体ホルダに1つの支持体をその中心が前記支持体ホルダの回転中心と一致するように保持する工程と、前記支持体に垂直な中心線から所定の距離を離して、前記支持体と平行な平面において、前記中心線から水平方向に放射状に延びる直線のうち少なくとも一の直線上に、下記一般式(1)により表される蛍光体を各々が含み、前記蛍光体を抵抗加熱法により加熱蒸発させる3個以上の蒸発源を配置する工程と、前記3個以上の蒸発源から蒸発する前記蛍光体を前記支持体に蒸着させて蛍光体層を形成する工程と、を備え、前記支持体と前記3個以上の蒸発源の各々との距離を100mm〜1500mmとすることを特徴とする。
一般式(1)
M1X・aM2X'2・bM3X"3:eA
[式中、M1はLi、Na、K、Rb及びCsの各原子から選ばれる少なくとも1種のアルカリ金属原子であり、M2はBe、Mg、Ca、Sr、Ba、Zn、Cd、Cu及びNiの各原子から選ばれる少なくとも1種の二価金属原子であり、M3はSc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Al、Ga及びInの各原子から選ばれる少なくとも1種の三価金属原子であり、X、X'、X"はF、Cl、Br及びIの各原子から選ばれる少なくとも1種のハロゲン原子であり、AはEu、Tb、In、Ce、Tm、Dy、Pr、Ho、Nd、Yb、Er、Gd、Lu、Sm、Y、Tl、Na、Ag、Cu及びMgの各原子から選ばれる少なくとも1種の金属原子であり、また、a、b、eはそれぞれ0≦a<0.5、0≦b<0.5、0<e<1.0の範囲の数値を表す。]
According to a fourth aspect of the present invention, there is provided a method for manufacturing a radiographic image conversion panel, wherein a support body that rotates in a horizontal direction in a vacuum vessel has a single support body whose center coincides with a rotation center of the support body holder. And at least one straight line radially extending from the center line in a plane parallel to the support at a predetermined distance from a center line perpendicular to the support. Each of the phosphors represented by the following general formula (1), the step of arranging three or more evaporation sources for heating and evaporating the phosphors by resistance heating, and the three or more evaporation sources And evaporating the phosphor to evaporate on the support to form a phosphor layer, wherein the distance between the support and each of the three or more evaporation sources is 100 mm to 1500 mm. And
General formula (1)
M1X, aM2X'2, bM3X "3: eA
[Wherein M1 is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M2 is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and Ni. And M3 is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb. , Lu, Al, Ga, and In, at least one trivalent metal atom selected from X, X ′, and X ″ are at least one selected from F, Cl, Br, and I atoms. A is a halogen atom, and A is derived from each atom of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. At least one metal atom selected, and a b, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]

請求項4の発明によれば、3個以上の蒸発源を設けることによって各蒸発源の蒸気流が重なり合う部分が整流化され、支持体の表面に蒸着する蛍光体の結晶性は均一になる。また、3個以上の蒸発源を支持体に垂直な中心線から所定の距離を離して、前記支持体と平行な平面において、前記中心線から水平方向に放射状に延びる直線のうち少なくとも一の直線上に配置することから、3個以上の蒸発源は互いに狭い間隔で配置されることになり、蒸発源の蒸気流は支持体のうち各蒸発源の上部付近に蒸着するため、蒸発源と支持体との距離を近づけても蛍光体の特性は劣化しない。したがって、蒸発源と支持体との距離を近づけて蒸着効率を高めることができる。こうした傾向は、多数の蒸着源を設けるほど顕著になる。また、3個以上の蒸発源を直線上に配置することから、支持体の表面における膜厚分布を一定にすることができる。これによって、蛍光体層の感度ムラを低下させて、放射線画像変換パネルから得られる放射線画像の鮮鋭性を向上させることができる。   According to the invention of claim 4, by providing three or more evaporation sources, the overlapping portions of the vapor flows of the respective evaporation sources are rectified, and the crystallinity of the phosphor deposited on the surface of the support becomes uniform. Further, at least one of straight lines extending radially from the center line in a plane parallel to the support with a predetermined distance from three or more evaporation sources at a predetermined distance from the center line perpendicular to the support. Since three or more evaporation sources are arranged at a narrow interval from each other, the vapor flow of the evaporation source is deposited near the upper part of each evaporation source in the support. Even when the distance to the body is reduced, the characteristics of the phosphor do not deteriorate. Therefore, the evaporation efficiency can be increased by reducing the distance between the evaporation source and the support. Such a tendency becomes more prominent as a large number of vapor deposition sources are provided. In addition, since three or more evaporation sources are arranged on a straight line, the film thickness distribution on the surface of the support can be made constant. Thereby, the sensitivity nonuniformity of a fluorescent substance layer can be reduced and the sharpness of the radiographic image obtained from a radiographic image conversion panel can be improved.

また、本発明においては各蒸発源の間隔が狭く、蒸発源の蒸気流は支持体のうち各蒸発源の上部付近に蒸着するので、支持体に到達する蛍光体の入射角のばらつきは少なく、結晶性は均一となる。このような傾向も多数の蒸着源を設けるほど顕著になる。ここで、入射角とは、支持体のうち蛍光体層が形成される面と蛍光体の入射方向とが成す鋭角θをいう。   Further, in the present invention, the interval between the evaporation sources is narrow, and the vapor flow of the evaporation source is deposited near the upper part of each evaporation source in the support, so that the variation in the incident angle of the phosphor reaching the support is small, Crystallinity becomes uniform. Such a tendency becomes more prominent as a larger number of vapor deposition sources are provided. Here, the incident angle refers to an acute angle θ formed by the surface of the support on which the phosphor layer is formed and the incident direction of the phosphor.

請求項5の発明は、請求項4に記載の放射線画像変換パネルの製造方法であって、前記支持体ホルダは、前記蒸着源から前記蛍光体を蒸着させる際に前記支持体を回転させる支持体回転機構を備えていることを特徴とする。   Invention of Claim 5 is a manufacturing method of the radiographic image conversion panel of Claim 4, Comprising: The said support body holder rotates the said support body when vapor-depositing the said fluorescent substance from the said vapor deposition source. A rotation mechanism is provided.

請求項5の発明によれば、支持体回転機構によって支持体を回転しながら蛍光体の蒸着を行うことによって、支持体の表面全体に均一に蛍光体を蒸着させることができる。   According to the invention of claim 5, the phosphor can be uniformly deposited on the entire surface of the support by performing the deposition of the phosphor while rotating the support by the support rotating mechanism.

請求項6の発明は、請求項4又は5に記載の放射線画像変換パネルの製造方法であって、前記支持体に垂直な中心線と前記3個以上の蒸発源の各々との間隔を100mm〜1500mmとすることを特徴とする。   Invention of Claim 6 is a manufacturing method of the radiographic image conversion panel of Claim 4 or 5, Comprising: The space | interval of the centerline perpendicular | vertical to the said support body and each of the said 3 or more evaporation sources is 100 mm- It is characterized by being 1500 mm.

請求項7の発明は、請求項4から6のいずれか一項に記載の放射線画像変換パネルの製造方法であって、前記蛍光体層の膜厚分布が10%以下であることを特徴とする。   A seventh aspect of the invention is a method for manufacturing a radiation image conversion panel according to any one of the fourth to sixth aspects, wherein the film thickness distribution of the phosphor layer is 10% or less. .

本発明によれば、蛍光体の結晶性を均一にすると共に、蒸着効率の向上と膜厚分布の向上とを両立させて、蛍光体層の感度ムラを低下させ、放射線画像変換パネルから得られる放射線画像の鮮鋭性を向上させることができる。
また、複数の蒸発源の間隔を狭くすることによって蛍光体の入射角のばらつきが少なくなることから、所定の入射角で支持体に到達する蛍光体を遮蔽する遮蔽板などをシャッタと別に設けることなく、結晶性を均一にして放射線画像の鮮鋭性を向上させることができる。
According to the present invention, the crystallinity of the phosphor is made uniform, the vapor deposition efficiency is improved and the film thickness distribution is improved at the same time, the sensitivity unevenness of the phosphor layer is reduced, and the radiation image conversion panel can be obtained. The sharpness of the radiation image can be improved.
In addition, since the variation in the incident angle of the phosphor is reduced by reducing the interval between the plurality of evaporation sources, a shielding plate for shielding the phosphor that reaches the support at a predetermined incident angle is provided separately from the shutter. Therefore, the crystallinity can be made uniform to improve the sharpness of the radiation image.

また、支持体の表面全体に均一に蛍光体を蒸着させることによって、放射線画像変換パネルから得られる放射線画像の鮮鋭性を向上させることができる。   Moreover, the sharpness of the radiographic image obtained from a radiographic image conversion panel can be improved by depositing a fluorescent substance uniformly on the whole surface of a support body.

また、蛍光体の結晶性を均一にすると共に、蒸着効率の向上と膜厚分布の向上とを両立させて、蛍光体層の感度ムラを低下させ、放射線画像変換パネルから得られる放射線画像の鮮鋭性を向上させることができる。
また、3個以上の蒸発源の間隔を狭くすることによって蛍光体の入射角のばらつきが少なくなることから、所定の入射角で支持体に到達する蛍光体を遮蔽する遮蔽板などをシャッタと別に設けることなく、結晶性を均一にして放射線画像の鮮鋭性を向上させることができる。
In addition, the crystallinity of the phosphor is made uniform, the deposition efficiency is improved and the film thickness distribution is improved at the same time, the sensitivity unevenness of the phosphor layer is reduced, and the radiation image obtained from the radiation image conversion panel is sharpened. Can be improved.
In addition, since the variation in the incident angle of the phosphor is reduced by reducing the interval between the three or more evaporation sources, a shielding plate for shielding the phosphor reaching the support at a predetermined incident angle is separated from the shutter. Without providing, crystallinity can be made uniform and the sharpness of the radiation image can be improved.

また、支持体の表面全体に均一に蛍光体を蒸着させることによって、放射線画像変換パネルから得られる放射線画像の鮮鋭性を向上させることができる。   Moreover, the sharpness of the radiographic image obtained from a radiographic image conversion panel can be improved by depositing a fluorescent substance uniformly on the whole surface of a support body.

以下、本発明の実施形態について、図面を参照しながら説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

まず、本発明に係る放射線画像変換パネルの製造装置1について説明する。   First, the radiation image conversion panel manufacturing apparatus 1 according to the present invention will be described.

図1に示すように、放射線画像変換パネルの製造装置1は真空容器2を備えており、真空容器2には真空容器2の内部の排気及び大気の導入を行う真空ポンプ3が備えられている。   As shown in FIG. 1, the radiation image conversion panel manufacturing apparatus 1 includes a vacuum container 2, and the vacuum container 2 includes a vacuum pump 3 that evacuates the inside of the vacuum container 2 and introduces the atmosphere. .

真空容器2の内部の上面付近には、支持体4を保持する支持体ホルダ5が設けられている。   A support holder 5 that holds the support 4 is provided in the vicinity of the upper surface inside the vacuum vessel 2.

支持体4は従来の放射線画像変換パネルの支持体として公知の材料から任意に選ぶことができるが、本実施形態の支持体4としては、石英ガラスシート、アルミニウム、鉄、スズ、クロムなどからなる金属シート又は炭素繊維強化シートなどが好ましい。   The support 4 can be arbitrarily selected from known materials as a support for a conventional radiation image conversion panel, and the support 4 of the present embodiment is made of quartz glass sheet, aluminum, iron, tin, chromium, or the like. A metal sheet or a carbon fiber reinforced sheet is preferred.

また、支持体4は、その表面を平滑な面とするために樹脂層を有していてもよい。樹脂層は、ポリイミド、ポリエチレンフタレート、パラフィン、グラファイトなどの化合物を含有することが好ましく、その膜厚は、約5μm〜50μmであることが好ましい。この樹脂層は、支持体4の表面に設けてもよく、裏面に設けてもよい。   Moreover, the support body 4 may have a resin layer in order to make the surface smooth. The resin layer preferably contains a compound such as polyimide, polyethylene phthalate, paraffin, graphite, and the film thickness is preferably about 5 μm to 50 μm. This resin layer may be provided on the front surface of the support 4 or on the back surface.

また、支持体4の表面に接着層を設ける手段としては、貼合法、塗設法などの手段がある。このうち貼合法は加熱、加圧ローラを用いて行い、加熱条件は約80〜150℃、加圧条件は4.90×10〜2.94×102N/cm、搬送速度は0.1〜2.0m/sが好ましい。 Moreover, as means for providing an adhesive layer on the surface of the support 4, there are means such as a bonding method and a coating method. Among these, the bonding method is performed using heating and a pressure roller, the heating condition is about 80 to 150 ° C., the pressing condition is 4.90 × 10 to 2.94 × 10 2 N / cm, and the conveyance speed is 0.1. -2.0 m / s is preferable.

支持体4の表面には、輝尽性蛍光体層が気相堆積法によって形成される。気相堆積法としては、蒸着法、スパッタリング法、CVD法、イオンプレーティング法その他を用いることができるが、本発明では特に蒸着法が好ましい。   A photostimulable phosphor layer is formed on the surface of the support 4 by a vapor deposition method. As the vapor deposition method, a vapor deposition method, a sputtering method, a CVD method, an ion plating method, or the like can be used. In the present invention, the vapor deposition method is particularly preferable.

ここで、本発明に係る輝尽性蛍光体層は、下記一般式(1)で表される輝尽性蛍光体を含有することが好ましい。   Here, the stimulable phosphor layer according to the present invention preferably contains a stimulable phosphor represented by the following general formula (1).

一般式(1)
1X・aM2X'2・bM3X"3:eA
[式中、M1はLi、Na、K、Rb及びCsの各原子から選ばれる少なくとも1種のアルカリ金属原子であり、M2はBe、Mg、Ca、Sr、Ba、Zn、Cd、Cu及びNiの各原子から選ばれる少なくとも1種の二価金属原子であり、M3はSc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Al、Ga及びInの各原子から選ばれる少なくとも1種の三価金属原子であり、X、X'、X"はF、Cl、Br及びIの各原子から選ばれる少なくとも1種のハロゲン原子であり、AはEu、Tb、In、Ce、Tm、Dy、Pr、Ho、Nd、Yb、Er、Gd、Lu、Sm、Y、Tl、Na、Ag、Cu及びMgの各原子から選ばれる少なくとも1種の金属原子であり、また、a、b、eはそれぞれ0≦a<0.5、0≦b<0.5、0<e<1.0の範囲の数値を表す。]
General formula (1)
M 1 X · aM 2 X ' 2 · bM 3 X " 3 : eA
[Wherein, M 1 is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M 2 is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu. And at least one divalent metal atom selected from each atom of Ni, and M 3 is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, At least one trivalent metal atom selected from each atom of Tm, Yb, Lu, Al, Ga and In, and X, X ′ and X ″ are at least selected from each atom of F, Cl, Br and I 1 type of halogen atom, A is Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu and Mg. At least one metal atom selected from each atom, and , B, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]

上記一般式(1)で表される輝尽性蛍光体において、M1は、Na、K、Rb及びCsなどの各原子から選ばれる少なくとも1種のアルカリ金属原子を表し、中でもRb及びCsの各原子から選ばれる少なくとも1種のアルカリ土類金属原子が好ましく、さらに好ましくはCs原子である。 In the photostimulable phosphor represented by the general formula (1), M 1 represents at least one alkali metal atom selected from each atom such as Na, K, Rb and Cs. At least one alkaline earth metal atom selected from each atom is preferred, and a Cs atom is more preferred.

2は、Be、Mg、Ca、Sr、Ba、Zn、Cd、Cu及びNiなどの各原子から選ばれる少なくとも1種の二価の金属原子を表すが、中でも好ましく用いられるのは、Be、Mg、Ca、Sr及びBaなどの各原子から選ばれる二価の金属原子である。 M 2 represents at least one divalent metal atom selected from atoms such as Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu, and Ni, and among these, Be, It is a divalent metal atom selected from each atom such as Mg, Ca, Sr and Ba.

3は、Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Al、Ga及びInなどの各原子から選ばれる少なくとも1種の三価の金属原子を表すが、中でも好ましく用いられるのはY、Ce、Sm、Eu、Al、La、Gd、Lu、Ga及びInなどの各原子から選ばれる三価の金属原子である。 M 3 is selected from atoms such as Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ga, and In. Although it represents at least one trivalent metal atom, among them, a trivalent metal atom selected from each atom such as Y, Ce, Sm, Eu, Al, La, Gd, Lu, Ga and In is preferred. It is.

Aは、Eu、Tb、In、Ce、Tm、Dy、Pr、Ho、Nd、Yb、Er、Gd、Lu、Sm、Y、Tl、Na、Ag、Cu及びMgの各原子から選ばれる少なくとも1種の金属原子である。中でも好ましくはEu原子である。   A is at least one selected from each atom of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. It is a seed metal atom. Of these, Eu atoms are preferred.

輝尽性蛍光体の輝尽発光輝度向上の観点から、X、X'及びX"はF、Cl、Br及びIの各原子から選ばれる少なくとも1種のハロゲン原子を表すが、F、Cl及びBrから選ばれる少なくとも1種のハロゲン原子が好ましく、Br原子が更に好ましい。   From the viewpoint of improving the photostimulable emission brightness of the photostimulable phosphor, X, X ′ and X ″ represent at least one halogen atom selected from F, Cl, Br and I atoms. At least one halogen atom selected from Br is preferable, and a Br atom is more preferable.

また、一般式(1)において、b値は0≦b<0.5であるが、好ましくは、0≦b<10-2である。 In the general formula (1), the b value is 0 ≦ b <0.5, and preferably 0 ≦ b <10 −2 .

本発明の一般式(1)で表される輝尽性蛍光体は、例えば下記(a)〜(c)に示す蛍光体原料を用いて、以下に述べる方法により製造される。   The photostimulable phosphor represented by the general formula (1) of the present invention is produced by the method described below using, for example, phosphor materials shown in the following (a) to (c).

(a)NaF、NaCl、NaBr、NaI、KF、KCl、KBr、KI、RbF、RbCl、RbBr、RbI、CsF、CsCl、CsBr及びCsIから選ばれる少なくとも1種もしくは2種以上の化合物が用いられる。   (A) At least one compound selected from NaF, NaCl, NaBr, NaI, KF, KCl, KBr, KI, RbF, RbCl, RbBr, RbI, CsF, CsCl, CsBr and CsI is used.

(b)MgF2、MgCl2、MgBr2、MgI2、CaF2、CaCl2、CaBr2、CaI2、SrF2、SrCl2、SrBr2、SrI2、BaF2、BaCI2、BaBr2、BaBr2・2H2O、BaI2、ZnF2、ZnCl2、ZnBr2、ZnI2、CdF2、CdCl2、CdBr2、CdI2、CuF2、CuCl2、CuBr2、CuI、NiF2、NiCl2、NiBr2及びNiI2の化合物から選ばれる少なくとも1種又は2種以上の化合物が用いられる。 (B) MgF 2, MgCl 2 , MgBr 2, MgI 2, CaF 2, CaCl 2, CaBr 2, CaI 2, SrF 2, SrCl 2, SrBr 2, SrI 2, BaF 2, BaCI 2, BaBr 2, BaBr 2 2H 2 O, BaI 2 , ZnF 2 , ZnCl 2 , ZnBr 2 , ZnI 2 , CdF 2 , CdCl 2 , CdBr 2 , CdI 2 , CuF 2 , CuCl 2 , CuBr 2 , CuI, NiF 2 , NiCl 2 , NiBr At least one or two or more compounds selected from 2 and NiI 2 compounds are used.

(c)前記一般式(1)において、Eu、Tb、In、Cs、Ce、Tm、Dy、Pr、Ho、Nd、Yb、Er、Gd、Lu、Sm、Y、Tl、Na、Ag、Cu及びMgなどの各原子から選ばれる金属原子を有する化合物が用いられる。   (C) In the general formula (1), Eu, Tb, In, Cs, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu And a compound having a metal atom selected from each atom such as Mg.

上記の数値範囲の混合組成となるように、前記(a)〜(c)の蛍光体原料を秤量し、純水によって溶解する。
この際、乳鉢、ボールミル、ミキサーミルなどを用いて充分に混合しても良い。
The phosphor materials (a) to (c) are weighed so as to have a mixed composition in the above numerical range, and are dissolved with pure water.
At this time, the mixture may be sufficiently mixed using a mortar, ball mill, mixer mill or the like.

次に、得られた水溶液のpH値Cを0<C<7に調整するように所定の酸を加えた後、水分を蒸発気化させる。   Next, a predetermined acid is added so that the pH value C of the obtained aqueous solution is adjusted to 0 <C <7, and then water is evaporated.

次に、得られた原料混合物を石英るつぼあるいはアルミナるつぼなどの耐熱性容器に充填して電気炉中で焼成を行う。焼成温度は500〜1000℃が好ましい。焼成時間は原料混合物の充填量、焼成温度などによって異なるが、0.5〜6時間が好ましい。   Next, the obtained raw material mixture is filled in a heat-resistant container such as a quartz crucible or an alumina crucible and fired in an electric furnace. The firing temperature is preferably 500 to 1000 ° C. The firing time varies depending on the filling amount of the raw material mixture, the firing temperature, etc., but is preferably 0.5 to 6 hours.

焼成雰囲気としては少量の水素ガスを含む窒素ガス雰囲気、少量の一酸化炭素を含む炭酸ガス雰囲気などの弱還元性雰囲気、窒素ガス雰囲気、アルゴンガス雰囲気などの中性雰囲気あるいは少量の酸素ガスを含む弱酸化性雰囲気が好ましい。   The firing atmosphere includes a nitrogen gas atmosphere containing a small amount of hydrogen gas, a weak reducing atmosphere such as a carbon dioxide gas atmosphere containing a small amount of carbon monoxide, a neutral atmosphere such as a nitrogen gas atmosphere and an argon gas atmosphere, or a small amount of oxygen gas. A weak oxidizing atmosphere is preferred.

なお、前記の焼成条件で一度焼成した後、焼成物を電気炉から取り出して粉砕し、しかる後、焼成物粉末を再び耐熱性容器に充填して電気炉に入れ、前記と同じ焼成条件で再焼成を行えば輝尽性蛍光体の発光輝度を更に高めることができ、また、焼成物を焼成温度より室温に冷却する際、焼成物を電気炉から取り出して空気中で放冷することによっても所望の輝尽性蛍光体を得ることができるが、焼成時と同じ、弱還元性雰囲気もしくは中性雰囲気のままで冷却しても良い。   After firing once under the aforementioned firing conditions, the fired product is taken out from the electric furnace and pulverized, and then the fired product powder is again filled in a heat-resistant container and placed in the electric furnace, and again under the same firing conditions as described above. If the firing is performed, the luminous brightness of the photostimulable phosphor can be further increased, and when the fired product is cooled to the room temperature from the firing temperature, the fired product is taken out of the electric furnace and allowed to cool in the air. Although the desired photostimulable phosphor can be obtained, it may be cooled in the same weakly reducing atmosphere or neutral atmosphere as in the firing.

また、焼成物を電気炉内で加熱部より冷却部へ移動させて、弱還元性雰囲気、中性雰囲気もしくは弱酸化性雰囲気で急冷することにより、得られた輝尽性蛍光体から発せられる輝尽光の輝度をより一層高めることができ好ましい。   In addition, the fired product is moved from the heating part to the cooling part in an electric furnace and rapidly cooled in a weakly reducing atmosphere, neutral atmosphere or weakly oxidizing atmosphere, so that the luminous phosphors emitted from the resulting stimulable phosphor are emitted. It is preferable because the brightness of the exhaust light can be further increased.

さらに、必要に応じて、輝尽性蛍光体層の支持体とは反対の側の面に、物理的にあるいは化学的に輝尽性蛍光体層を保護するための保護層を設けてもよい。保護層は、保護層用の塗布液を輝尽性蛍光体層の表面に直接塗布して形成もよいし、また、予め別途形成した保護層を輝尽性蛍光体層に接着してもよい。   Further, if necessary, a protective layer for physically or chemically protecting the photostimulable phosphor layer may be provided on the surface of the photostimulable phosphor layer opposite to the support. . The protective layer may be formed by directly applying a coating solution for the protective layer to the surface of the photostimulable phosphor layer, or a protective layer separately formed in advance may be adhered to the photostimulable phosphor layer. .

保護層の材料としては、酢酸セルロース、ニトロセルロース、ポリメチルメタクリレート、ポリビニルブチラール、ポリビニルホルマール、ポリカーボネート、ポリエステル、ポリエチレンテレフタレート、ポリエチレン、ポリ塩化ビニリデン、ナイロン、ポリ四フッ化エチレン、ポリ三フッ化−塩化エチレン、四フッ化エチレン−六フッ化プロピレン共重合体、塩化ビニリデン−塩化ビニル共重合体、塩化ビニリデン−アクリロニトリル共重合体などの通常の保護層用材料が用いられる。他に透明なガラス基板を保護層として用いることもできる。   Materials for the protective layer include cellulose acetate, nitrocellulose, polymethyl methacrylate, polyvinyl butyral, polyvinyl formal, polycarbonate, polyester, polyethylene terephthalate, polyethylene, polyvinylidene chloride, nylon, polytetrafluoroethylene, polytrifluoride-chloride. Usual protective layer materials such as ethylene, ethylene tetrafluoride-hexafluoropropylene copolymer, vinylidene chloride-vinyl chloride copolymer, vinylidene chloride-acrylonitrile copolymer are used. In addition, a transparent glass substrate can be used as the protective layer.

支持体ホルダ5は、支持体4のうち輝尽性蛍光体層を形成する面が真空容器2の底面に対して平行となるように支持体4を保持するようになっている。   The support holder 5 is configured to hold the support 4 so that the surface of the support 4 on which the photostimulable phosphor layer is formed is parallel to the bottom surface of the vacuum vessel 2.

また、支持体ホルダ5には、支持体4を加熱する加熱ヒータ(図示せず)を備えることが好ましい。この加熱ヒータで支持体4を加熱することによって、支持体4の支持体ホルダ5に対する密着性の強化や、輝尽性蛍光体層の膜質調整を行う。また、支持体4の表面の吸着物を離脱・除去し、支持体4の表面と輝尽性蛍光体との間に不純物層が発生することを防止する。   The support holder 5 is preferably provided with a heater (not shown) for heating the support 4. By heating the support 4 with this heater, the adhesion of the support 4 to the support holder 5 is enhanced and the film quality of the stimulable phosphor layer is adjusted. Further, the adsorbate on the surface of the support 4 is removed and removed, and an impurity layer is prevented from being generated between the surface of the support 4 and the photostimulable phosphor.

また、加熱手段として温媒又は熱媒を循環させるための機構(図示せず)を有していてもよい。この手段は輝尽性蛍光体の蒸着時における支持体4の温度を50〜150℃といった比較的低温に保持して蒸着する場合に適している。   Moreover, you may have a mechanism (not shown) for circulating a heating medium or a heating medium as a heating means. This means is suitable when vapor deposition is performed while maintaining the temperature of the support 4 at a relatively low temperature of 50 to 150 ° C. during the deposition of the stimulable phosphor.

さらに、支持体ホルダ5には、支持体4を水平方向に回転させる支持体回転機構6が設けられている。支持体回転機構6は、支持体ホルダ5を支持すると共に支持体4を回転させる支持体回転軸7及び真空容器2の外部に配置されて支持体回転軸7の駆動源となるモータ(図示せず)から構成されている。   Further, the support holder 5 is provided with a support rotating mechanism 6 that rotates the support 4 in the horizontal direction. The support rotating mechanism 6 supports the support holder 5 and rotates the support 4 and a motor (not shown) that is disposed outside the vacuum vessel 2 and serves as a drive source for the support rotating shaft 7. Z).

また、図1に示すように、真空容器2の内部の底面付近には、支持体4の中心から放射状に延びる一つの直線上に複数の蒸発源8が配置されている。この場合において、支持体4と蒸発源8との間隔は100mm〜1500mmとされるのが好ましく、より好ましくは200mm〜1000mmである。また、支持体4に垂直な中心線と蒸発源8との間隔は100mm〜1500mmとされるのが好ましく、より好ましくは200mm〜1000mmである。   Also, as shown in FIG. 1, a plurality of evaporation sources 8 are arranged on one straight line extending radially from the center of the support 4 near the bottom surface inside the vacuum vessel 2. In this case, the distance between the support 4 and the evaporation source 8 is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm. The distance between the center line perpendicular to the support 4 and the evaporation source 8 is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm.

なお、本発明の放射線画像変換パネル製造装置においては、支持体4の中心から放射状に延びる複数の直線上に蒸発源8を配置してもよい。また、3個以上の多数の蒸発源8を設けることも可能であり、各々の蒸発源8は等間隔に配置してもよく、間隔を変えて配置してもよい。   In the radiation image conversion panel manufacturing apparatus of the present invention, the evaporation source 8 may be arranged on a plurality of straight lines extending radially from the center of the support 4. It is also possible to provide a large number of three or more evaporation sources 8. Each evaporation source 8 may be arranged at equal intervals or at different intervals.

蒸発源8は、輝尽性蛍光体を収容して抵抗加熱法で加熱するため、ヒータを巻いたアルミナ製のるつぼから構成しても良いし、ボートや、高融点金属からなるヒータから構成しても良い。また、輝尽性蛍光体を加熱する方法は、抵抗加熱法以外に電子ビームによる加熱や、高周波誘導による加熱等の方法でも良いが、本発明では、比較的簡単な構成で取り扱いが容易、安価、かつ、非常に多くの物質に適用可能である点から抵抗加熱法が好ましい。また、蒸発源8は分子源エピタキシャル法による分子線源でも良い。   Since the evaporation source 8 contains a stimulable phosphor and is heated by a resistance heating method, the evaporation source 8 may be composed of an alumina crucible around which a heater is wound, or may be composed of a boat or a heater made of a refractory metal. May be. In addition to the resistance heating method, the stimulable phosphor may be heated by an electron beam or a high frequency induction method. However, in the present invention, it is easy to handle with a relatively simple structure and is inexpensive. In addition, the resistance heating method is preferable because it can be applied to a large number of substances. The evaporation source 8 may be a molecular beam source by a molecular source epitaxial method.

また、それぞれの蒸発源8と支持体4との間には、蒸発源8から支持体4に至る空間を遮断するシャッタ9が水平方向に開閉自在に設けられており、このシャッタ9によって、蒸発源8において輝尽性蛍光体の表面に付着した目的物以外の物質が蒸着の初期段階で蒸発し、支持体4に付着するのを防ぐことができるようになっている。   Further, a shutter 9 that blocks a space from the evaporation source 8 to the support 4 is provided between each evaporation source 8 and the support 4 so as to be openable and closable in the horizontal direction. It is possible to prevent substances other than the target substance attached to the surface of the photostimulable phosphor in the source 8 from being evaporated in the initial stage of vapor deposition and adhering to the support 4.

次に、前述の放射線画像変換パネル製造装置1を用いた本発明の放射線画像変換パネル製造方法について説明する。   Next, the radiographic image conversion panel manufacturing method of the present invention using the radiographic image conversion panel manufacturing apparatus 1 described above will be described.

まず、支持体ホルダ5に支持体4を取付ける。   First, the support 4 is attached to the support holder 5.

また、真空容器2の底面付近において、支持体4の中心から放射状に延びる直線上に、複数の蒸発源8を配置する。この場合において、支持体4と蒸発源8との間隔は100mm〜1500mmとされるのが好ましく、より好ましくは200mm〜1000mmである。また、支持体4の水平方向に垂直な中心線と蒸発源8との間隔は100mm〜1500mmとされるのが好ましく、より好ましくは200mm〜1000mmである。   A plurality of evaporation sources 8 are arranged on a straight line extending radially from the center of the support 4 near the bottom surface of the vacuum vessel 2. In this case, the distance between the support 4 and the evaporation source 8 is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm. Moreover, it is preferable that the space | interval of the centerline perpendicular | vertical to the horizontal direction of the support body 4 and the evaporation source 8 shall be 100 mm-1500 mm, More preferably, it is 200 mm-1000 mm.

次いで、真空容器2の内部を真空排気し、所望の真空度に調整する。その後、支持体回転機構6により支持体ホルダ5を蒸発源8に対して回転させ、蒸着可能な真空度に真空容器2が達したら、加熱した蒸発源8から輝尽性蛍光体を蒸発させて、支持体4の表面に輝尽性蛍光体を所望の厚さに成長させる。   Next, the inside of the vacuum vessel 2 is evacuated and adjusted to a desired vacuum level. Thereafter, the support holder 5 is rotated with respect to the evaporation source 8 by the support rotation mechanism 6, and when the vacuum container 2 reaches a vacuum degree capable of vapor deposition, the stimulable phosphor is evaporated from the heated evaporation source 8. Then, a stimulable phosphor is grown on the surface of the support 4 to a desired thickness.

なお、支持体4の表面に輝尽性蛍光体を成長させる工程を複数回に分けて行って輝尽性蛍光体層を形成することも可能である。   Note that the photostimulable phosphor layer can be formed by performing the step of growing the photostimulable phosphor on the surface of the support 4 in a plurality of times.

また、蒸着法においては、蒸着時、必要に応じて、被蒸着体(支持体4、保護層又は中間層)を冷却あるいは加熱しても良い。   In the vapor deposition method, the vapor-deposited body (support 4, protective layer, or intermediate layer) may be cooled or heated as necessary during vapor deposition.

さらに、蒸着終了後、輝尽性蛍光体層を加熱処理しても良い。また、蒸着法においては必要に応じてO2、H2などのガスを導入して蒸着する反応性蒸着を行っても良い。 Further, the stimulable phosphor layer may be heat-treated after the vapor deposition. In the vapor deposition method, reactive vapor deposition may be performed in which vapor deposition is performed by introducing a gas such as O 2 or H 2 as necessary.

形成する輝尽性蛍光体層の膜厚は、放射線画像変換パネルの使用目的により、また輝尽性蛍光体の種類により異なるが、本発明の効果を得る観点から50μm〜2000μmであり、好ましくは50μm〜1000μmであり、さらに好ましくは100μm〜800μmである。   The film thickness of the photostimulable phosphor layer to be formed is 50 μm to 2000 μm, preferably from the viewpoint of obtaining the effects of the present invention, although it varies depending on the intended use of the radiation image conversion panel and the type of stimulable phosphor. It is 50 micrometers-1000 micrometers, More preferably, they are 100 micrometers-800 micrometers.

また、輝尽性蛍光体層が形成される支持体4の温度は、室温(rt)〜300℃に設定することが好ましく、さらに好ましくは50〜200℃である。   In addition, the temperature of the support 4 on which the photostimulable phosphor layer is formed is preferably set to room temperature (rt) to 300 ° C, more preferably 50 to 200 ° C.

以上のようにして輝尽性蛍光体層を形成した後、必要に応じて、輝尽性蛍光体層の支持体4とは反対の側の面に、物理的にあるいは化学的に輝尽性蛍光体層を保護するための保護層を設けてもよい。保護層は、保護層用の塗布液を輝尽性蛍光体層の表面に直接塗布して形成してもよく、また、予め別途形成した保護層を輝尽性蛍光体層に接着してもよい。これらの保護層の層厚は0.1μm〜2000μmが好ましい。   After the photostimulable phosphor layer is formed as described above, if necessary, the photostimulable phosphor layer is physically or chemically photostimulated on the surface of the photostimulable phosphor layer on the side opposite to the support 4. A protective layer for protecting the phosphor layer may be provided. The protective layer may be formed by directly applying a coating solution for the protective layer onto the surface of the photostimulable phosphor layer, or by adhering a separately formed protective layer to the photostimulable phosphor layer. Good. The thickness of these protective layers is preferably 0.1 μm to 2000 μm.

また、保護層は蒸着法、スパッタリング法などにより、SiC、SiO2、SiN、Al23などの無機物質を積層して形成してもよい。 The protective layer may be formed by laminating inorganic substances such as SiC, SiO 2 , SiN, Al 2 O 3 by vapor deposition or sputtering.

以上の放射線画像変換パネルの製造装置1又は製造方法によれば、複数の蒸発源8を設けることによって、各蒸発源8の蒸気流が重なり合う部分が整流化され、支持体4の表面に蒸着する輝尽性蛍光体の結晶性は均一になる。また、複数の蒸発源8を支持体4の中心から放射状に延びる直線上に配置することから、複数の蒸発源8は互いに狭い間隔で配置されることになり、蒸発源8の蒸気流は支持体4のうち各蒸発源8の上部付近に蒸着するため、蒸発源8と支持体4との距離を近づけても、輝尽性蛍光体の特性は劣化しない。したがって、蒸発源8と支持体4との距離を近づけて蒸着効率を高めることができる。こうした傾向は、多数の蒸着源8を設けるほど顕著になる。また、複数の蒸発源8を直線上に配置することから、支持体4の表面における膜厚分布を一定にすることができる。これによって、輝尽性蛍光体層の感度ムラを低下させて、放射線画像変換パネルから得られる放射線画像の鮮鋭性を向上させることができる。   According to the radiation image conversion panel manufacturing apparatus 1 or manufacturing method described above, by providing the plurality of evaporation sources 8, the overlapping portions of the vapor flows of the respective evaporation sources 8 are rectified and deposited on the surface of the support 4. The crystallinity of the photostimulable phosphor becomes uniform. Further, since the plurality of evaporation sources 8 are arranged on a straight line extending radially from the center of the support 4, the plurality of evaporation sources 8 are arranged at a narrow interval, and the vapor flow of the evaporation source 8 is supported. Since the vapor deposition is performed near the upper part of each evaporation source 8 in the body 4, the characteristics of the stimulable phosphor are not deteriorated even if the distance between the evaporation source 8 and the support 4 is reduced. Therefore, the evaporation efficiency can be increased by reducing the distance between the evaporation source 8 and the support 4. Such a tendency becomes more prominent as a larger number of vapor deposition sources 8 are provided. Further, since the plurality of evaporation sources 8 are arranged on a straight line, the film thickness distribution on the surface of the support 4 can be made constant. Thereby, the sensitivity unevenness of the photostimulable phosphor layer can be reduced, and the sharpness of the radiation image obtained from the radiation image conversion panel can be improved.

また、本実施形態においては各蒸発源8の間隔が狭く、蒸発源8の蒸気流は支持体4のうち各蒸発源8の上部付近に蒸着するので、支持体4に到達する輝尽性蛍光体の入射角のばらつきは少なく、結晶性は均一となる。このような傾向も多数の蒸着源を設けるほど顕著になる。ここで、入射角とは、支持体4のうち輝尽性蛍光体層が形成される面と輝尽性蛍光体の入射方向とが成す鋭角θをいう。   Further, in the present embodiment, the interval between the evaporation sources 8 is narrow, and the vapor flow of the evaporation source 8 is deposited near the upper portion of each evaporation source 8 in the support 4, so that the photostimulable fluorescence that reaches the support 4 is achieved. There is little variation in the incident angle of the body, and the crystallinity is uniform. Such a tendency becomes more prominent as a larger number of vapor deposition sources are provided. Here, the incident angle refers to an acute angle θ formed by the surface of the support 4 on which the stimulable phosphor layer is formed and the incident direction of the stimulable phosphor.

さらに、支持体回転機構6によって支持体4を回転しながら輝尽性蛍光体の蒸着を行うことによって、支持体4の表面全体に均一に輝尽性蛍光体を蒸着させることができる。   Furthermore, the stimulable phosphor can be uniformly deposited on the entire surface of the support 4 by depositing the stimulable phosphor while rotating the support 4 by the support rotating mechanism 6.

以上述べたように本発明の放射線画像変換パネル製造装置1又は製造方法によれば、輝尽性蛍光体の結晶性を均一にすると共に、蒸着効率の向上と膜厚分布の向上とを両立させて、輝尽性蛍光体層の感度ムラを低下させ、放射線画像変換パネルから得られる放射線画像の鮮鋭性を向上させることができる。
また、複数の蒸発源8の間隔を狭くすることにより輝尽性蛍光体の入射角のばらつきが少なくなることから、所定の入射角で支持体4に到達する輝尽性蛍光体を遮蔽する遮蔽板などをシャッタと別に設けることなく、結晶性を均一にして放射線画像の鮮鋭性を向上させることができる。
As described above, according to the radiation image conversion panel manufacturing apparatus 1 or the manufacturing method of the present invention, the crystallinity of the photostimulable phosphor is made uniform, and the improvement of the deposition efficiency and the improvement of the film thickness distribution are made compatible. Thus, the sensitivity unevenness of the photostimulable phosphor layer can be reduced, and the sharpness of the radiation image obtained from the radiation image conversion panel can be improved.
Further, since the variation in the incident angle of the stimulable phosphor is reduced by narrowing the interval between the plurality of evaporation sources 8, the shielding for shielding the stimulable phosphor that reaches the support 4 at a predetermined incident angle. Without providing a plate or the like separately from the shutter, the crystallinity can be made uniform and the sharpness of the radiation image can be improved.

なお、以上は支持体ホルダ5が支持体回転機構6を備える場合について説明したが、本実施形態は必ずしもこれに限らず、支持体ホルダ5が支持体4を保持して静止した状態で蒸着を行う場合や、支持体4を蒸発源8に対して水平方向に移動させることによって蒸発源8からの輝尽性蛍光体を蒸着させる場合などについても適用可能である。   In addition, although the above demonstrated the case where the support body holder 5 was equipped with the support body rotation mechanism 6, this embodiment is not necessarily restricted to this, It vapor-deposits in the state which the support body holder 5 hold | maintained the support body 4 and was still. The present invention can also be applied to the case where the photostimulable phosphor from the evaporation source 8 is deposited by moving the support 4 in the horizontal direction with respect to the evaporation source 8.

以下、実施例を挙げて本発明を具体的に説明するが、本発明の実施態様はこれに限定されるものではない。   EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated concretely, the embodiment of this invention is not limited to this.

[実施例1]
(放射線像変換パネルの作製)
アルミニウムからなる支持体の片面に輝尽性蛍光体(CsBr:0.0005Eu)を蒸着させて輝尽性蛍光体層を形成した。
すなわち、まず、支持体回転機構を備えた支持体ホルダに支持体を設置した。次に、上記蛍光体原料を蒸着材料として抵抗加熱るつぼに充填し、2個の抵抗加熱るつぼを真空容器の内部の底面付近であって支持体の中心から放射状に延びる直線上に配置した。このとき、支持体と蒸発源との間隔を200mmに調節すると共に、支持体に垂直な中心線と蒸発源との間隔を300mmに調節した。続いて真空容器の内部を一旦排気し、Arガスを導入して0.1Paに真空度を調整した後、10rpmの速度で支持体を回転させながら支持体の温度を100℃に保持した。次いで、抵抗加熱るつぼを加熱して輝尽性蛍光体を蒸着し、輝尽性蛍光体層の膜厚が500μmとなったところで蒸着を終了させた。
次いで、乾燥空気内で輝尽性蛍光体層を保護層袋に入れ、輝尽性蛍光体層が密封された構造の放射線像変換パネルを得た。
[Example 1]
(Production of radiation image conversion panel)
A photostimulable phosphor layer was formed by vapor-depositing a photostimulable phosphor (CsBr: 0.0005Eu) on one side of a support made of aluminum.
That is, first, a support was placed on a support holder provided with a support rotation mechanism. Next, the resistance heating crucible was filled with the phosphor raw material as an evaporation material, and the two resistance heating crucibles were arranged on the straight line extending radially from the center of the support near the bottom surface inside the vacuum vessel. At this time, the distance between the support and the evaporation source was adjusted to 200 mm, and the distance between the center line perpendicular to the support and the evaporation source was adjusted to 300 mm. Subsequently, the inside of the vacuum vessel was once evacuated, Ar gas was introduced and the degree of vacuum was adjusted to 0.1 Pa, and then the temperature of the support was maintained at 100 ° C. while rotating the support at a speed of 10 rpm. Next, the resistance heating crucible was heated to deposit the stimulable phosphor, and the deposition was terminated when the thickness of the stimulable phosphor layer reached 500 μm.
Next, the stimulable phosphor layer was placed in a protective layer bag in dry air to obtain a radiation image conversion panel having a structure in which the stimulable phosphor layer was sealed.

[実施例2]
実施例1の蒸発源の数を3個として放射線画像変換パネルを得た。
[Example 2]
A radiation image conversion panel was obtained with the number of evaporation sources of Example 1 being three.

[比較例1]
図2に示すように、実施例1の蒸発源の数を1個とし、蒸発源と支持体との距離を800mmとして放射線画像変換パネルを得た。
[Comparative Example 1]
As shown in FIG. 2, the radiation image conversion panel was obtained by setting the number of evaporation sources in Example 1 to one and setting the distance between the evaporation sources and the support to 800 mm.

[比較例2]
実施例1の蒸発源の数を1個とし、蒸発源と支持体との距離を400mmとして放射線画像変換パネルを得た。
[Comparative Example 2]
A radiation image conversion panel was obtained by setting the number of evaporation sources in Example 1 to one and setting the distance between the evaporation source and the support to 400 mm.

[比較例3]
実施例1の蒸発源の数を1個として放射線画像変換パネルを得た。
そして、以上のようにして得られた放射線画像変換パネルについて下記のような評価を行った。
[Comparative Example 3]
A radiation image conversion panel was obtained by setting the number of evaporation sources in Example 1 to one.
And the following evaluation was performed about the radiographic image conversion panel obtained as mentioned above.

<蒸着効率>
蒸着効率は、蒸発源に充填した輝尽性蛍光体材料のうち、支持体に蒸着した輝尽性蛍光体の割合を示すものである。蒸着効率は、下記式(2)により算出した。

Figure 2011095282
<Vapor deposition efficiency>
The vapor deposition efficiency indicates the ratio of the photostimulable phosphor deposited on the support in the photostimulable phosphor material filled in the evaporation source. The deposition efficiency was calculated by the following formula (2).
Figure 2011095282

<膜厚分布>
膜厚分布は、輝尽性蛍光体層における輝尽性蛍光体の膜厚のばらつきの程度を示す指標値となるものである。膜厚分布は、輝尽性蛍光体層における最大膜厚DMax及び最小膜厚
minを測定して、下記式(3)により算出した。
<Thickness distribution>
The film thickness distribution is an index value indicating the degree of variation in the film thickness of the photostimulable phosphor in the photostimulable phosphor layer. The film thickness distribution was calculated by the following formula (3) by measuring the maximum film thickness D Max and the minimum film thickness D min in the photostimulable phosphor layer.

Figure 2011095282
Figure 2011095282

<鮮鋭性>
放射線画像変換パネルにCTFチャートを貼り付けて、管電圧80kVP−PのX線を10mR(管球から放射線画像変換パネルまでの距離:1.5m)照射した後、半導体レーザ光(発振波長:780nm、ビーム径:100μm)で走査して輝尽励起し、CTFチャート像を輝尽性蛍光体層から放射される輝尽発光として読み取り、光検出器(光電子増倍管)で光電変換して画像信号を得た。この信号値により、画像の変調伝達関数(MTF)を調べた。そして、実施例1の蒸発源の数を1個とし、蒸発源と支持体との距離を800mmとした場合(比較例1)の値を100として相対値で示した。なお、MTFは、空間周波数が1サイクル/mmの時の値である。
<Sharpness>
A CTF chart is attached to the radiation image conversion panel, and X-rays having a tube voltage of 80 kVP-P are irradiated with 10 mR (distance from the tube to the radiation image conversion panel: 1.5 m), and then semiconductor laser light (oscillation wavelength: 780 nm). , Beam diameter: 100 μm) and stimulated excitation, CTF chart image is read as stimulated emission emitted from the stimulable phosphor layer, and photoelectrically converted by a photodetector (photomultiplier tube). Got a signal. Based on this signal value, the modulation transfer function (MTF) of the image was examined. Then, when the number of evaporation sources in Example 1 is one and the distance between the evaporation source and the support is 800 mm (Comparative Example 1), the value is shown as a relative value. MTF is a value when the spatial frequency is 1 cycle / mm.

Figure 2011095282
Figure 2011095282

以上、表1の結果から明らかなように、実施例1で蒸発源と支持体との距離を200mmとして蒸発源の数を2個とした場合は、蒸着効率が12、鮮鋭性が110、膜厚分布が12%であり、比較例1で蒸発源と支持体との距離を800mmとして蒸発源の数を1個とした場合の蒸着効率5、鮮鋭性100、膜厚分布15%と比較すると、蒸発源と支持体との距離を近づけることによって蒸着効率が向上すると共に、蒸発源と支持体との距離を近づけても鮮鋭性が向上し、また、蒸発源の個数を増やすことによって膜厚分布が向上することがわかる。   As can be seen from the results in Table 1, when the distance between the evaporation source and the support is 200 mm and the number of evaporation sources is two in Example 1, the deposition efficiency is 12, the sharpness is 110, and the film The thickness distribution is 12%. In comparison example 1, when the distance between the evaporation source and the support is 800 mm and the number of evaporation sources is 1, the deposition efficiency is 5, sharpness 100, and the film thickness distribution is 15%. The deposition efficiency is improved by reducing the distance between the evaporation source and the support, the sharpness is improved even when the distance between the evaporation source and the support is reduced, and the film thickness is increased by increasing the number of evaporation sources. It can be seen that the distribution is improved.

また、実施例2で蒸発源の数を3個とした場合の蒸着効率は15、鮮鋭性は121、膜厚分布は10%であり、蒸発源の数を増やすと蒸着効率、鮮鋭性及び膜厚分布はさらに向上することがわかる。   Further, when the number of evaporation sources is 3 in Example 2, the deposition efficiency is 15, the sharpness is 121, and the film thickness distribution is 10%. When the number of evaporation sources is increased, the deposition efficiency, the sharpness, and the film are increased. It can be seen that the thickness distribution is further improved.

これに対し、比較例2で蒸発源の数を1個としたままで蒸発源と支持体との距離を400mに近づけた場合は、比較例1より、蒸発源と支持体との距離を近づけることによって蒸着効率は向上するが、鮮鋭性は90と下降し、膜厚分布も21%と悪くなることがわかる。   On the other hand, when the distance between the evaporation source and the support is made closer to 400 m with the number of evaporation sources being one in Comparative Example 2, the distance between the evaporation source and the support is made closer than in Comparative Example 1. As a result, the deposition efficiency is improved, but the sharpness is lowered to 90, and the film thickness distribution is also deteriorated to 21%.

さらに、比較例3で蒸発源の数を1個としたままで蒸発源と支持体との距離を200mに近づけた場合は、比較例1より、蒸発源と支持体との距離を近づけることによって比較例2よりさらに蒸着効率は向上するが、鮮鋭性は80とさらに下降し、膜厚分布も32%とさらに悪くなることがわかる。   Further, when the distance between the evaporation source and the support is made closer to 200 m with the number of evaporation sources being one in Comparative Example 3, the distance between the evaporation source and the support is made closer than in Comparative Example 1. Although the vapor deposition efficiency is further improved as compared with Comparative Example 2, it is understood that the sharpness is further lowered to 80 and the film thickness distribution is further deteriorated to 32%.

すなわち、複数の蒸発源を支持体の中心から放射状に延びる直線上に配置することによって、蒸着効率の向上と膜厚分布の向上とを両立させて、蒸発源と支持体との距離を近づけても鮮鋭性は向上することが示された。   That is, by arranging a plurality of evaporation sources on a straight line extending radially from the center of the support, it is possible to improve the vapor deposition efficiency and the film thickness distribution, and to reduce the distance between the evaporation source and the support. It was also shown that sharpness is improved.

本発明の放射線画像変換パネルの製造装置を示す断面図である。It is sectional drawing which shows the manufacturing apparatus of the radiographic image conversion panel of this invention. 比較例1の放射線画像変換パネルの製造装置を示す断面図である。It is sectional drawing which shows the manufacturing apparatus of the radiographic image conversion panel of the comparative example 1.

1 放射線画像変換パネルの製造装置
2 真空容器
3 真空ポンプ
4 支持体
5 支持体ホルダ
6 支持体回転機構
7 支持体回転軸
8 蒸発源
9 シャッタ
DESCRIPTION OF SYMBOLS 1 Radiation image conversion panel manufacturing apparatus 2 Vacuum container 3 Vacuum pump 4 Support body 5 Support body holder 6 Support body rotation mechanism 7 Support body rotation shaft 8 Evaporation source 9 Shutter

Claims (7)

真空容器と、
前記真空容器内に設けられ、水平方向に回転する支持体ホルダと、
前記支持体ホルダに、その中心が前記支持体ホルダの回転中心と一致するように保持された1つの支持体と、
前記支持体に垂直な中心線から所定の距離を離して、前記支持体と平行な平面において、前記中心線から水平方向に放射状に延びる直線のうち少なくとも一の直線上に配置され、下記一般式(1)により表される蛍光体を各々が含み、前記蛍光体を抵抗加熱法により加熱蒸発させて前記支持体に前記蛍光体を蒸着させる3個以上の蒸発源と、
を備え、
前記支持体と前記3個以上の蒸発源の各々との距離は100mm〜1500mmであることを特徴とする放射線画像変換パネルの製造装置。
一般式(1)
M1X・aM2X'2・bM3X"3:eA
[式中、M1はLi、Na、K、Rb及びCsの各原子から選ばれる少なくとも1種のアルカリ金属原子であり、M2はBe、Mg、Ca、Sr、Ba、Zn、Cd、Cu及びNiの各原子から選ばれる少なくとも1種の二価金属原子であり、M3はSc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Al、Ga及びInの各原子から選ばれる少なくとも1種の三価金属原子であり、X、X'、X"はF、Cl、Br及びIの各原子から選ばれる少なくとも1種のハロゲン原子であり、AはEu、Tb、In、Ce、Tm、Dy、Pr、Ho、Nd、Yb、Er、Gd、Lu、Sm、Y、Tl、Na、Ag、Cu及びMgの各原子から選ばれる少なくとも1種の金属原子であり、また、a、b、eはそれぞれ0≦a<0.5、0≦b<0.5、0<e<1.0の範囲の数値を表す。]
A vacuum vessel;
A support holder provided in the vacuum vessel and rotating in a horizontal direction;
One support body held by the support body holder so that the center thereof coincides with the rotation center of the support body holder;
A predetermined distance from a center line perpendicular to the support is arranged on a plane parallel to the support on at least one straight line extending radially from the center line in the horizontal direction. Each of the phosphors represented by (1), three or more evaporation sources for vaporizing the phosphors on the support by heating and evaporating the phosphors by a resistance heating method;
With
The apparatus for manufacturing a radiation image conversion panel, wherein a distance between the support and each of the three or more evaporation sources is 100 mm to 1500 mm.
General formula (1)
M1X, aM2X'2, bM3X "3: eA
[Wherein M1 is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M2 is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and Ni. And M3 is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb. , Lu, Al, Ga, and In, at least one trivalent metal atom selected from X, X ′, and X ″ are at least one selected from F, Cl, Br, and I atoms. A is a halogen atom, and A is derived from each atom of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. At least one metal atom selected, and a b, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]
前記支持体ホルダは、前記蒸着源から前記蛍光体を蒸着させる際に前記支持体を回転させる支持体回転機構を備えていることを特徴とする請求項1に記載の放射線画像変換パネルの製造装置。   The apparatus for manufacturing a radiation image conversion panel according to claim 1, wherein the support holder includes a support rotating mechanism that rotates the support when the phosphor is deposited from the deposition source. . 前記支持体に垂直な中心線と前記3個以上の蒸発源の各々との間隔は100mm〜1500mmであることを特徴とする請求項1又は2に記載の放射線画像変換パネルの製造装置。   The apparatus for manufacturing a radiation image conversion panel according to claim 1 or 2, wherein a distance between a center line perpendicular to the support and each of the three or more evaporation sources is 100 mm to 1500 mm. 真空容器内において、水平方向に回転する支持体ホルダに1つの支持体をその中心が前記支持体ホルダの回転中心と一致するように保持する工程と、
前記支持体に垂直な中心線から所定の距離を離して、前記支持体と平行な平面において、前記中心線から水平方向に放射状に延びる直線のうち少なくとも一の直線上に、下記一般式(1)により表される蛍光体を各々が含み、前記蛍光体を抵抗加熱法により加熱蒸発させる3個以上の蒸発源を配置する工程と、
前記3個以上の蒸発源から蒸発する前記蛍光体を前記支持体に蒸着させて蛍光体層を形成する工程と、
を備え、
前記支持体と前記3個以上の蒸発源の各々との距離を100mm〜1500mmとすることを特徴とする放射線画像変換パネルの製造方法。
一般式(1)
M1X・aM2X'2・bM3X"3:eA
[式中、M1はLi、Na、K、Rb及びCsの各原子から選ばれる少なくとも1種のアルカリ金属原子であり、M2はBe、Mg、Ca、Sr、Ba、Zn、Cd、Cu及びNiの各原子から選ばれる少なくとも1種の二価金属原子であり、M3はSc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Al、Ga及びInの各原子から選ばれる少なくとも1種の三価金属原子であり、X、X'、X"はF、Cl、Br及びIの各原子から選ばれる少なくとも1種のハロゲン原子であり、AはEu、Tb、In、Ce、Tm、Dy、Pr、Ho、Nd、Yb、Er、Gd、Lu、Sm、Y、Tl、Na、Ag、Cu及びMgの各原子から選ばれる少なくとも1種の金属原子であり、また、a、b、eはそれぞれ0≦a<0.5、0≦b<0.5、0<e<1.0の範囲の数値を表す。]
In the vacuum vessel, holding a single support on a support holder that rotates in the horizontal direction so that the center thereof coincides with the rotation center of the support holder;
On a plane parallel to the support at a predetermined distance from a center line perpendicular to the support and extending radially from the center line in a horizontal direction, at least one straight line is represented by the following general formula (1 And a step of disposing three or more evaporation sources each of which includes a phosphor represented by the following formula:
Depositing the phosphor evaporating from the three or more evaporation sources on the support to form a phosphor layer;
With
A method for producing a radiation image conversion panel, wherein a distance between the support and each of the three or more evaporation sources is set to 100 mm to 1500 mm.
General formula (1)
M1X, aM2X'2, bM3X "3: eA
[Wherein M1 is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M2 is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and Ni. And M3 is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb. , Lu, Al, Ga, and In, at least one trivalent metal atom selected from X, X ′, and X ″ are at least one selected from F, Cl, Br, and I atoms. A is a halogen atom, and A is derived from each atom of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. At least one metal atom selected, and a b, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]
前記支持体ホルダは、前記蒸着源から前記蛍光体を蒸着させる際に前記支持体を回転させる支持体回転機構を備えていることを特徴とする請求項4に記載の放射線画像変換パネルの製造方法。   The method of manufacturing a radiation image conversion panel according to claim 4, wherein the support holder includes a support rotating mechanism that rotates the support when the phosphor is deposited from the deposition source. . 前記支持体に垂直な中心線と前記3個以上の蒸発源の各々との間隔を100mm〜1500mmとすることを特徴とする請求項4又は5に記載の放射線画像変換パネルの製造方法。   6. The method for manufacturing a radiation image conversion panel according to claim 4, wherein a distance between a center line perpendicular to the support and each of the three or more evaporation sources is set to 100 mm to 1500 mm. 前記蛍光体層の膜厚分布が10%以下であることを特徴とする請求項4から6のいずれか一項に記載の放射線画像変換パネルの製造方法。   The method of manufacturing a radiation image conversion panel according to any one of claims 4 to 6, wherein a film thickness distribution of the phosphor layer is 10% or less.
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JP2003194999A (en) * 2001-09-27 2003-07-09 Fuji Photo Film Co Ltd Method and device for manufacturing radiation image conversion panel
JP2004037363A (en) * 2002-07-05 2004-02-05 Fuji Photo Film Co Ltd Method for manufacturing radiation image conversion panel
JP2004101129A (en) * 2002-09-12 2004-04-02 Toshiba Corp Control method for refrigerator and refrigeration device
JP2004245713A (en) * 2003-02-14 2004-09-02 Konica Minolta Holdings Inc Radiation image conversion panel and manufacturing method for the radiation image conversion panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003194999A (en) * 2001-09-27 2003-07-09 Fuji Photo Film Co Ltd Method and device for manufacturing radiation image conversion panel
JP2004037363A (en) * 2002-07-05 2004-02-05 Fuji Photo Film Co Ltd Method for manufacturing radiation image conversion panel
JP2004101129A (en) * 2002-09-12 2004-04-02 Toshiba Corp Control method for refrigerator and refrigeration device
JP2004245713A (en) * 2003-02-14 2004-09-02 Konica Minolta Holdings Inc Radiation image conversion panel and manufacturing method for the radiation image conversion panel

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