JP2011071404A - 発光装置および照明装置 - Google Patents
発光装置および照明装置 Download PDFInfo
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- JP2011071404A JP2011071404A JP2009222422A JP2009222422A JP2011071404A JP 2011071404 A JP2011071404 A JP 2011071404A JP 2009222422 A JP2009222422 A JP 2009222422A JP 2009222422 A JP2009222422 A JP 2009222422A JP 2011071404 A JP2011071404 A JP 2011071404A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
Abstract
【解決手段】 紫色の光を発する発光素子17と、該発光素子17が載置された基体15と、発光素子17が発する光を波長変換する波長変換層19とを具備してなる発光装置であって、波長変換層19の発光素子17側に積層された光散乱層20を具備しており、波長変換層19が、透明マトリクス19a中に緑色発光蛍光体19d、青色発光蛍光体19cおよび赤色発光蛍光体19bを分散してなり、光散乱層20が、透明マトリクス20a中に光散乱粒子20bを分散してなる。
【選択図】図1
Description
(赤色発光蛍光体19bの説明)
赤色発光蛍光体19bは、平均粒径D50が15〜45μmの蛍光体からなるもので、平均粒径は、レーザー回折散乱法により測定することができる。また、赤色発光蛍光体19bの量子効率は35〜45%とされている。
(緑色発光蛍光体19dの説明)
本発明の緑色発光蛍光体19dは、平均粒径D50が15〜45μmの蛍光体からなるもので、平均粒径は、レーザー回折散乱法により測定することができる。また、緑色発光蛍光体19dの量子効率は40〜50%とされている。
(青色発光蛍光体19cの説明)
本発明の青色発光蛍光体19cは、平均粒径D50が2〜10μmの蛍光体からなるもので、平均粒径は、レーザー回折散乱法により測定することができる。また、青色発光蛍光体19cの量子効率は35〜45%とされている。
先ず、図1の発光装置11を作製した。基板(基体)15としてアルミナ基板を用い、基板15上に設けられている発光素子17としてサファイア基板に窒化物半導体をエピ形成した発光素子を用い、反射部材21としてアルミナを用いた。
光散乱粒子として、シリカ(SiO2)に代えて、表2に示すように、アルミナ(Al2O3)、メタクリル酸メチル(メタクリル酸系樹脂)、ポリスチレン(アクリル系樹脂)を用いる以外は、上記実施例1と同様にして、発光装置を作製し、評価し、結果を図4に記載した。
光散乱粒子として、シリカを用い、平均粒径を表3に示すように変化させる以外は、上記実施例1と同様にして、実施例5〜8の発光装置を作製し、評価し、結果を図5に記載した。
光散乱粒子として、平均粒径0.3μmのシリカを用い、光散乱層の厚みを表4に示すように変化させ、光散乱層と波長変換層との合計厚みを0.7mmに設定する以外は、上記実施例1と同様にして、実施例9〜11の発光装置を作製し、評価し、結果を図6に記載した。
光散乱粒子として、平均粒径0.3μmのシリカを用い、光散乱層の厚みを0.1mmとし、光散乱層における光散乱粒子の濃度(含有量)を、表5に示すように変化させる以外は、上記実施例1と同様にして、実施例12〜15の発光装置を作製し、評価し、結果を図7に記載した。
13・・・電極
15・・・基板
17・・・発光素子
19・・・波長変換層
20・・・光散乱層
21・・・反射部材
Claims (3)
- 紫色の光を発する発光素子と、該発光素子が載置された基体と、前記発光素子が発する光を波長変換する波長変換層とを具備してなる発光装置であって、前記波長変換層の前記発光素子側に積層された光散乱層を具備しており、前記波長変換層が、透明マトリクス中に緑色に発光する蛍光体、青色に発光する蛍光体および赤色に発光する蛍光体を分散してなり、前記光散乱層が、透明マトリクス中に光散乱粒子を分散してなることを特徴とする発光装置。
- 前記光散乱層の前記光散乱粒子は、シリカ、アルミナ、メタクリル酸系樹脂およびアクリル系樹脂のいずれかからなることを特徴とする請求項1に記載の発光装置。
- 請求項1または2に記載の発光装置を複数具備してなることを特徴とする照明装置。
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Cited By (19)
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WO2012152107A1 (zh) * | 2011-05-09 | 2012-11-15 | 深圳市绎立锐光科技开发有限公司 | 基于光波长转换产生高亮度单色光的方法及光源 |
JP2013153105A (ja) * | 2012-01-26 | 2013-08-08 | Sharp Corp | 蛍光体板、蛍光体板を用いた発光装置及び蛍光体板の製造方法 |
JP2014116081A (ja) * | 2012-12-06 | 2014-06-26 | Stanley Electric Co Ltd | 発光装置及び車両用灯具 |
JP2014160555A (ja) * | 2013-02-19 | 2014-09-04 | Stanley Electric Co Ltd | 発光装置、車両用灯具及び応力逃がし部成型方法 |
JP2014183269A (ja) * | 2013-03-21 | 2014-09-29 | Stanley Electric Co Ltd | 波長変換装置 |
WO2014162893A1 (ja) * | 2013-04-01 | 2014-10-09 | 旭硝子株式会社 | 光変換部材、その製造方法、照明光源および液晶表示装置 |
US8872210B2 (en) | 2012-04-27 | 2014-10-28 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
WO2015156227A1 (ja) * | 2014-04-08 | 2015-10-15 | Nsマテリアルズ株式会社 | 波長変換部材、成形体、波長変換装置、シート部材、発光装置、導光装置、並びに表示装置 |
WO2015178223A1 (ja) * | 2014-05-21 | 2015-11-26 | 日本電気硝子株式会社 | 波長変換部材及びそれを用いた発光装置 |
JP2016506069A (ja) * | 2012-11-28 | 2016-02-25 | エルジー・ケム・リミテッド | 発光ダイオード |
JP2016035594A (ja) * | 2012-02-29 | 2016-03-17 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 変換部材、照明手段および変換部材の製造方法 |
US20160123557A1 (en) * | 2013-06-08 | 2016-05-05 | Appotronics China Corporation | Wavelength conversion device, manufacturing method thereof, and related illumination device |
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CN106098906A (zh) * | 2016-06-13 | 2016-11-09 | 青岛海信电器股份有限公司 | 量子点发光装置封装件、背光模组及液晶显示装置 |
US9726335B2 (en) | 2011-09-22 | 2017-08-08 | Delta Electronics, Inc. | Phosphor device and manufacturing method thereof having a second phosphor agent to increase the luminous intensity of a converted color light |
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US10281810B2 (en) | 2011-09-22 | 2019-05-07 | Delta Electronics, Inc. | Projection apparatus comprising phosphor wheel coated with phosphor agents for converting waveband light |
US10688527B2 (en) | 2011-09-22 | 2020-06-23 | Delta Electronics, Inc. | Phosphor device comprising plural phosphor agents for converting waveband light into plural color lights with different wavelength peaks |
US10770628B2 (en) | 2018-05-31 | 2020-09-08 | Nichia Corporation | Light emitting device |
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JP2005183727A (ja) * | 2003-12-19 | 2005-07-07 | Kyocera Corp | 発光装置 |
WO2006011571A1 (ja) * | 2004-07-28 | 2006-02-02 | Kyocera Corporation | 光源装置および該光源装置を備える内視鏡 |
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2009
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