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JP2010232644A5 - - Google Patents

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Publication number
JP2010232644A5
JP2010232644A5 JP2010043727A JP2010043727A JP2010232644A5 JP 2010232644 A5 JP2010232644 A5 JP 2010232644A5 JP 2010043727 A JP2010043727 A JP 2010043727A JP 2010043727 A JP2010043727 A JP 2010043727A JP 2010232644 A5 JP2010232644 A5 JP 2010232644A5
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JP
Japan
Prior art keywords
optical semiconductor
semiconductor device
groove
manufacturing
resin
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Application number
JP2010043727A
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Japanese (ja)
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JP5423475B2 (en
JP2010232644A (en
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Priority to JP2010043727A priority Critical patent/JP5423475B2/en
Priority claimed from JP2010043727A external-priority patent/JP5423475B2/en
Publication of JP2010232644A publication Critical patent/JP2010232644A/en
Publication of JP2010232644A5 publication Critical patent/JP2010232644A5/ja
Application granted granted Critical
Publication of JP5423475B2 publication Critical patent/JP5423475B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (6)

支持基板上に、互いに離間する導電部材を複数形成する第１の工程と、
光半導体素子を載置可能な複数の凹部と、隣接する凹部の間に溝と、を有する第１の樹脂からなる基体を形成する第２の工程と、
前記溝内に、前記第１の樹脂よりも光吸収係数の大きい第２の樹脂を充填する第３の工程と、
前記支持基板を除去後、前記第２の樹脂を含む領域を切断して光半導体装置を個片化する第４の工程と、
を有する光半導体装置の製造方法。 A first step of forming a plurality of conductive members spaced from each other on a support substrate;
A second step of forming a base made of a first resin having a plurality of recesses on which an optical semiconductor element can be placed and a groove between adjacent recesses;
A third step of filling the groove with a second resin having a light absorption coefficient larger than that of the first resin;
A fourth step of separating the optical semiconductor device into pieces by cutting the region containing the second resin after removing the support substrate;
The manufacturing method of the optical semiconductor device which has this. 前記第２の工程は、前記凹部の形成後に、溝が形成される請求項１記載の光半導体装置の製造方法。   The method of manufacturing an optical semiconductor device according to claim 1, wherein in the second step, a groove is formed after the recess is formed. 前記溝は、前記支持基板に近い側の幅が広い溝である請求項１記載の光半導体装置の製造方法。   The method for manufacturing an optical semiconductor device according to claim 1, wherein the groove is a groove having a wide width on a side close to the support substrate. 前記第２の工程は、先端部の直径が大きいドリルを、前記支持基板上を水平方向に移動させて溝を形成する請求項３記載の光半導体装置の製造方法。   4. The method of manufacturing an optical semiconductor device according to claim 3, wherein in the second step, a groove is formed by moving a drill having a large tip end portion in a horizontal direction on the support substrate. 5. 前記基体の線膨張係数は、５〜２５×１０−５／Ｋである請求項１乃至請求項４記載のいずれか１項に記載の光半導体装置及びその製造方法。 5. The optical semiconductor device according to claim 1, wherein the linear expansion coefficient of the substrate is 5 to 25 × 10 −5 / K. 前記基体は、熱硬化性樹脂を含む請求項１乃至請求項５のいずれか１項に記載の光半導体装置及びその製造方法。   The optical semiconductor device according to any one of claims 1 to 5, wherein the base includes a thermosetting resin, and a method for manufacturing the optical semiconductor device.
JP2010043727A 2009-03-06 2010-03-01 Manufacturing method of optical semiconductor device Expired - Fee Related JP5423475B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010043727A JP5423475B2 (en) 2009-03-06 2010-03-01 Manufacturing method of optical semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009052789 2009-03-06
JP2009052789 2009-03-06
JP2010043727A JP5423475B2 (en) 2009-03-06 2010-03-01 Manufacturing method of optical semiconductor device

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JP2013245523A Division JP5720759B2 (en) 2009-03-06 2013-11-28 Optical semiconductor device

Publications (3)

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JP2010232644A JP2010232644A (en) 2010-10-14
JP2010232644A5 true JP2010232644A5 (en) 2013-04-18
JP5423475B2 JP5423475B2 (en) 2014-02-19

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JP2013245523A Active JP5720759B2 (en) 2009-03-06 2013-11-28 Optical semiconductor device
JP2015064042A Active JP6060994B2 (en) 2009-03-06 2015-03-26 Optical semiconductor device

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5423475B2 (en) * 2009-03-06 2014-02-19 日亜化学工業株式会社 Manufacturing method of optical semiconductor device
JP5760379B2 (en) * 2010-10-25 2015-08-12 日立化成株式会社 Optical semiconductor device manufacturing method and optical semiconductor device
JP2013062416A (en) * 2011-09-14 2013-04-04 Toshiba Corp Semiconductor light-emitting device and manufacturing method of the same
JP6323217B2 (en) * 2013-07-10 2018-05-16 日亜化学工業株式会社 Light emitting device
JP6181523B2 (en) * 2013-11-05 2017-08-16 京セラ株式会社 Multi-cavity wiring boards, wiring boards and electronic components
DE102014102183A1 (en) 2014-02-20 2015-08-20 Osram Opto Semiconductors Gmbh Production of optoelectronic components
CN107994109A (en) * 2016-10-27 2018-05-04 佛山市国星光电股份有限公司 A kind of COB display modules and its manufacture method
DE102017117150A1 (en) * 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Process for the production of optoelectronic semiconductor components and optoelectronic semiconductor component
JP6485503B2 (en) * 2017-08-01 2019-03-20 日亜化学工業株式会社 Method for manufacturing light emitting device
JP7177336B2 (en) * 2018-07-20 2022-11-24 日亜化学工業株式会社 light emitting device
US11056624B2 (en) 2018-10-31 2021-07-06 Nichia Corporation Method of manufacturing package and method of manufacturing light-emitting device
WO2021051925A1 (en) 2019-09-18 2021-03-25 泉州三安半导体科技有限公司 Light emitting diode packaging assembly
JP7196813B2 (en) * 2019-10-14 2022-12-27 豊田合成株式会社 Light emitting device and manufacturing method thereof

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JPH08274378A (en) * 1995-03-30 1996-10-18 Kyocera Corp Package for light emitting element
JP3613041B2 (en) * 1998-12-16 2005-01-26 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP2006339362A (en) * 2005-06-01 2006-12-14 Ngk Spark Plug Co Ltd Wiring board for mounting light emitting element
JP2010093185A (en) * 2008-10-10 2010-04-22 Showa Denko Kk Lamp, and method of manufacturing lamp
JP5423475B2 (en) * 2009-03-06 2014-02-19 日亜化学工業株式会社 Manufacturing method of optical semiconductor device

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