JP2010251805A - Illumination device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an illumination device which suppresses a temperature rise of a semiconductor luminous element to easily maintain luminous efficiency. <P>SOLUTION: The illumination device includes a metal board 2, an insulating layer 5, a conductor 8, a semiconductor luminous element 11, a bonding wire 17 and a translucent sealing member 22. An element mounting part 3 is integrally provided on the metal board 2. The insulating layer 5 is laminated on the metal board 2 excluding the element mounting part 3. The conductor 8 is provided on the insulating layer 5. The semiconductor luminous element 11 is die-bonded to the element mounting part 3. The semiconductor luminous element 11 and the conductor 8 are connected with the bonding wire 17. The semiconductor luminous element 11 is sealed with the sealing member 22. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an illumination device that performs illumination by causing a semiconductor light emitting element such as an LED (light emitting diode) chip to emit light.

  2. Description of the Related Art Conventionally, for example, there is known an illumination device that is used as a planar light source by electrically connecting a plurality of LED chips that are two-dimensionally arranged in rows and columns to emit light. And in the illuminating device whose light source is an LED chip, the metal base printed circuit board is used in order to discharge | release the heat | fever which the LED chip emitted outside. This printed circuit board is formed by laminating an insulating layer on a metal plate such as aluminum and providing a conductor pattern on this insulating layer, and the LED chip is mounted on the insulating layer by flip chip mounting or wire bonding. (For example, refer to Patent Document 1).

Japanese Patent Laying-Open No. 2004-193357 (paragraphs 0002, 0013, 0038, FIGS. 1 to 7)

  As described above, in the conventional lighting device, the insulating layer is interposed between the LED chip and the metal plate responsible for promoting heat dissipation from now on. The thickness of the insulating layer is currently required to be 0.25 mm or more in order to ensure electrical insulation between the metal plate located on both surfaces of the insulating layer and the conductor pattern. The insulating layer has a much lower thermal conductivity than the metal material. As described in Patent Document 1, the insulating layer is composed of a thermosetting resin mixed with an inorganic filler to improve the thermal conductivity, but the thermal conductivity is still low when compared with a metal material. There is no change. Therefore, it is difficult to sufficiently suppress the temperature rise of the LED chip, and there is room for improvement in maintaining the light emission efficiency of the LED chip.

  And the conventional illuminating device cannot fully utilize the light discharge | released from each LED chip. Therefore, the light extraction efficiency of the entire lighting device is as low as about 25 lm to 50 lm, and as the LED lighting device, only the efficiency lower than the luminous efficiency (about 70 lm to 100 lm) of the fluorescent lamp is obtained. is there.

  The objective of this invention is providing the illuminating device which suppresses the temperature rise of a semiconductor light-emitting element and is easy to maintain luminous efficiency.

  The invention according to claim 1 is a heat dissipation substrate integrally having an element mounting portion; an insulating layer laminated on the heat dissipation substrate excluding the element mounting portion; provided on the insulating layer, and an end thereof and the element A conductor having a light reflecting layer on the surface provided so that the insulating layer is exposed between the mounting portion; and a height position of the upper surface thereof equal to or higher than the height of the insulating layer and the conductor. A semiconductor light emitting element die-bonded to the element mounting portion; a bonding wire connecting the semiconductor light emitting element and the conductor; and a translucent sealing member provided by sealing the semiconductor light emitting element. It is characterized by that.

  In the invention of claim 1, examples of the heat dissipation substrate include a metal substrate and a carbon-based substrate. The metal substrate can be formed of various metal materials, and for example, Cu (copper), Al (aluminum), an alloy thereof, and the like excellent in thermal conductivity can be suitably used. The carbon-based substrate can be formed of carbon or graphite. When a carbon-based substrate is used as the heat dissipation substrate, the carbon-based powder material can be compression-molded with a molding die. For this reason, even if the heat dissipation substrate has an element mounting portion formed of, for example, a convex portion, an etching process or the like is not required to form the convex portion, and an element mounting made of the convex portion is formed by molding. There is an advantage that a heat dissipation substrate having a predetermined shape having a portion can be easily formed. At the same time, the use of a carbon-based substrate as the heat dissipation substrate is preferable in that it can be a heat dissipation substrate that is not affected by the recent rise in copper prices.

  In the present invention, the element mounting portion of the heat dissipation board refers to a portion that is not covered by the insulating layer. When the heat dissipation substrate is a metal substrate, the thickness of the portion of the metal substrate covered with the insulating layer is preferably set to 0.25 mm to 0.50 mm, whereby the accuracy of the thickness dimension of the portion can be improved. Variations in the bonding strength of the bonding portion where the wire and the conductor are bonded by wire bonding are suppressed, and the bonding reliability can be improved.

  In the present invention, a glass epoxy substrate can be suitably used as the insulating layer, and it is preferable to use a white insulating layer in order to obtain good light reflection performance. For example, when an insulating layer made of a white glass epoxy substrate is used, light emitted from the semiconductor light emitting element to the periphery thereof is suppressed from being absorbed by the insulating layer and reflected by the white insulating layer. Therefore, it is effective for increasing the light extraction efficiency.

  In the present invention, the conductor is made of a metal having good electrical conductivity such as Cu (copper) or Ag (silver). For example, when the heat dissipation substrate is a metal substrate, the conductor can be provided by etching. In addition, it may be provided on the insulating layer using an adhesive. A resist layer can be applied to the surface of the conductor. The configuration in which the conductor is covered with the resist layer is preferable in that the insulation of the conductor can be improved, the migration resistance of the conductor can be improved, and the oxidation of the conductor can be suppressed.

  In the present invention, for example, a blue LED chip that emits blue light, an ultraviolet LED chip that emits ultraviolet light, and the like can be suitably used as the semiconductor light emitting element. Among blue LED chips, red LED chips, and green LED chips, It is also possible to use a combination of at least two types of LED chips. For example, when a lighting device that emits white light using a blue LED chip as a light emitting source is used, if a sealing member mixed with a phosphor that is excited by blue light and emits mainly yellow light is used. Well or alternatively, a phosphor that is excited by ultraviolet light to emit mainly red light, a phosphor that is excited by ultraviolet light to emit mainly green light, and a phosphor that is excited by ultraviolet light to emit mainly yellow light What is necessary is just to use the sealing member with which each fluorescent substance was mixed.

  In the present invention, a die-bonding material (adhesive) is used for die-bonding the semiconductor light-emitting element to the element mounting portion. The thickness of this die bond material is preferably 10 μm or less as long as the bonding function is not lost. In order to further improve the light extraction performance, it is preferable to make the die bond material translucent and reflect a part of the light emitted from the semiconductor light emitting element at the element mounting portion. Further, in the present invention, the light-transmitting sealing member that blocks the semiconductor light-emitting element from the outside air and moisture and prevents the lifetime of the element from being shortened includes a light-transmitting synthetic resin such as an epoxy resin, a silicone resin, and a urethane resin. In addition, a transparent low-melting-point glass can be used as a sealing member other than a resin.

  According to the present invention, by energizing the semiconductor light-emitting element through the conductor and the bonding wire, the element is caused to emit light, the light is transmitted through the sealing member, taken out to the outside, and illumination in the taking-out direction is performed. At the time of lighting, the insulating layer responsible for electrical insulation between the conductor and the heat dissipation board is not interposed between the heat dissipation board and the semiconductor light emitting element, and the semiconductor light emitting element is an element integrated with the heat dissipation board. It is die-bonded directly to the mounting part. Therefore, the heat generated by the semiconductor light emitting element during lighting is directly conducted to the heat dissipation substrate without being disturbed by the insulating layer. Therefore, the heat of the semiconductor light emitting device is transmitted to the heat dissipation substrate with high efficiency and released from the heat dissipation substrate, so that the temperature rise of the semiconductor light emitting device can be effectively suppressed.

  According to the present invention, the element mounting portion is formed by a convex portion protruding from one surface of the heat dissipation substrate on which the insulating layer is laminated, and the element mounting portion is formed on the tip surface on which the semiconductor light emitting element is die-bonded. The thickness may be gradually increased from one side of the heat dissipation board to the other surface. In this embodiment, the element mounting portion formed of the convex portion of the heat dissipation substrate can be formed by processing using laser light, machining, or the like, or can be formed by etching processing or the like. And in this form, since the cross-sectional area of an element attachment part is so large that it approaches the one surface of the thermal radiation board | substrate with which the insulating layer was adhere | attached, the heat conduction from a semiconductor light-emitting element toward the back surface of a thermal radiation board | substrate becomes easier.

  Further, in the above-described embodiment, the insulating layer has a relief hole through which the element mounting portion composed of the convex portion passes, and the insulating layer is bonded to the heat dissipation substrate and laminated, and the adhesive used for the bonding is used. The surplus portion may be devoured into the escape hole. As the adhesive, a paste-like adhesive or a sheet-like adhesive (adhesive sheet) can be used, and this adhesive is disposed and used in a region excluding the element mounting portion of the heat dissipation board. It is.

  In this embodiment, when the insulating layer is bonded to the heat dissipation board by the escape hole of the insulating layer through which the element mounting portion made of the convex portion passes, the escape hole fits into the element mounting portion made of the convex portion. Easy positioning of the insulating layer. Thereby, an insulating layer can be appropriately laminated | stacked on a thermal radiation board | substrate so that an insulating layer may not hit an element attachment part. In this embodiment, the escape hole can be used as an adhesive reservoir in which excess adhesive is accommodated.

  Furthermore, in the said form, the clearance gap corresponding to the thickness of an adhesive agent is formed in communication with an escape hole between a thermal radiation board | substrate and the insulating layer by having made the excess part of an adhesive stick out in an escape hole. There is nothing. For this reason, the air accumulated in the gap as in the case where there is a gap flows out into the sealing member when the sealing member is heated and cured, and becomes a bubble in the sealing member. There is no stay.

  Further, in the above embodiment, the height of the surplus height with respect to the escape hole may be equal to or less than the height of the surface of the insulating layer, but it is not allowed to be close to the same height as the surface of the insulating layer. When filling the cured sealing member, it is preferable in that air can hardly accumulate in the escape hole.

  In the above-described embodiment, when the insulating layer is bonded to the peripheral surface of the element mounting portion formed of the convex portion by the protruding portion of the adhesive protruding into the escape hole, Lamination strength can be improved. In addition, the creepage distance between the element mounting portion formed of the convex portion and the conductor on the insulating layer can be increased by the escape hole, and electrical insulation between them can be ensured.

  In the above embodiment, when the adhesive is milky white or white, the light radiated from the semiconductor light emitting element to the periphery thereof can be reflected and extracted by the adhesive stored in the escape hole, so that the light extraction efficiency is improved. Can contribute to increase.

  Furthermore, in the said form, you may vary the color of these insulating layers and adhesives so that the light reflectivity of the said adhesive which has the protrusion part to the said insulating layer and the said escape hole may mutually differ.

  In this form, in order to make the light reflectance of the insulating layer and the adhesive different, it is preferable to make the light reflectance of the adhesive lower than the light reflectance of the insulating layer. For example, when the color of the insulating layer is white, it is preferable that the color of the adhesive layer is brown or black in order to make the color difference between the insulating layer and the adhesive stand out.

  Further, in this embodiment, the color of the protruding portion of the adhesive layer protruding into the escape hole is different from the color of the portion around the escape hole of the insulating layer. For this reason, when determining the position where the semiconductor light emitting element is die-bonded to the element mounting portion in the escape hole, it is suitable for obtaining this positioning reference. That is, the positioning reference is obtained on the basis of imaging the escape hole with the imaging camera provided in the mounting machine for mounting the semiconductor light emitting element and recognizing the imaging data. The boundary between the protrusion and the protruding portion, that is, the escape hole can be easily recognized as the positioning reference.

  Further, in the above-described embodiment, the adhesive having a protruding portion to the escape hole and different colors of the heat dissipation substrate and the insulating layer so that the light reflectance of the heat dissipation substrate and the insulating layer are different from each other. You may form with a transparent material.

  In this embodiment, the light reflectance of the heat dissipation substrate and the insulating layer are preferably made lower than the light reflectivity of the insulating layer in order to make the light reflectivity different between the heat dissipation substrate and the insulating layer. For example, when the color of the insulating layer is white, it is possible to make the color difference between the insulating layer and the heat radiating substrate stand out by making the heat radiating substrate made of copper.

  In this embodiment, the color of the heat dissipation substrate imaged through the protruding portion of the adhesive layer protruding into the escape hole is different from the color of the portion around the escape hole of the insulating layer. For this reason, when determining the position where the semiconductor light emitting element is die-bonded to the element mounting portion in the escape hole, it is suitable for obtaining this positioning reference. In other words, the positioning reference is obtained based on imaging the escape hole with the imaging camera provided in the mounting machine for mounting the semiconductor light emitting element, and recognizing the imaging data. The boundary between the heat dissipation substrate covered with the protruding portion and the insulating layer, that is, the escape hole can be easily recognized as the positioning reference.

  In any one of the above forms, a die-bonding material for laminating a light reflecting layer on the tip surface of the element mounting portion and die-bonding the semiconductor light emitting element to the element mounting portion may have translucency.

  In this embodiment, it is preferable that the light reflecting layer is formed of a metal plating layer because it does not substantially hinder heat conduction from the semiconductor light emitting element to the element mounting portion. As such a light reflecting layer, for example, Ag (silver) And a light reflectance of 90% or more can be obtained. In this case, the light incident on the light reflecting layer through the light-transmitting die bond material is reflected with high efficiency, which is preferable because the light extraction efficiency can be further improved. In the invention of claim 6, frit glass or translucent synthetic resin such as transparent silicone resin can be used as the die bond material. It is preferable to use a transparent silicone resin as the die-bonding material because the possibility that the die-bonding material is deteriorated with discoloration due to heat generation of the semiconductor light-emitting element is extremely small, so that the light extraction efficiency can be maintained for a long time.

  In this embodiment, light emitted from the semiconductor light emitting element to the back surface thereof can be reflected and extracted by the light reflection layer of the element mounting portion through the die bonding material, so that the light extraction efficiency can be improved.

  In the above embodiment, the side light reflecting layer extending from the light reflecting layer to the escape hole of the adhesive is mixed with the phosphor in the sealing member, You may laminate on the side. In this embodiment, the side light reflecting layer is preferably a metal plating layer of the same type as the light reflecting layer on the tip surface of the element mounting portion. In this embodiment, the light extraction efficiency can be improved by the side light reflecting layer. That is, a part of the light emitted from the phosphor excited by the light emitted from the semiconductor light emitting element is incident on the side surface of the element mounting portion, and this incident light is reflected in the light extraction direction by the side light reflecting layer. As a result, the light extraction efficiency can be improved.

  Further, in any one of the above forms, a resist layer is laminated on the insulating layer and the conductor, and a plurality of openings in which the bonding wire and conductor connecting portions and the element mounting portions are arranged are provided in the resist layer. The sealing member may be provided for each opening.

  In this form, the resist layer can be formed of a transparent or colored synthetic resin material, but a resist layer made of a white synthetic resin, particularly a resist layer made of a white synthetic resin having a light reflectance of 80% or more. It is preferable to use it. Furthermore, in the invention of claim 8, the shape of the opening is preferably circular, but is not limited to this, and may be square.

  In this embodiment, the conductor is covered with the resist layer, and the conductor portion disposed outside the resist layer including the connection portion between the conductor and the bonding wire is sealed with the sealing member. Oxidation can be prevented. Furthermore, in the invention of claim 8, since the sealing member is provided for each opening of the resist layer, the sealing member is provided in comparison with the configuration in which the sealing member is provided over all semiconductor light emitting elements and conductors. The amount used can be reduced. In addition, when the sealing member is supplied to the opening by potting, it is possible to prevent the potted uncured sealing member from spreading outside the opening of the resist layer at the edge of the opening. .

  According to the present invention, since the heat of the semiconductor light emitting element is directly transmitted to the heat dissipation substrate and released, the temperature rise of the semiconductor light emitting element is suppressed, and an illumination device that easily maintains the light emission efficiency of the semiconductor light emitting element can be provided. . Moreover, an insulation distance can be ensured between the conductor and the element mounting portion.

FIG. 2 is a front view showing the lighting device according to the first embodiment of the present invention with a part cut away. Sectional drawing which expands and shows a part of illuminating device of FIG. The front view which shows the part shown by FIG. 2 in the state from which the sealing member was removed. The figure which shows the relationship between the reflectance directly under a semiconductor light-emitting element, and a light beam in the illuminating device of FIG. The figure which shows the relationship between the reflectance around a semiconductor light-emitting element, and a light beam in the illuminating device of FIG. Sectional drawing which expands and shows a part of illuminating device which concerns on 2nd Embodiment of this invention. Sectional drawing which expands and shows a part of illuminating device which concerns on 3rd Embodiment of this invention. The front view which abbreviate | omits one part sealing member and shows the illuminating device which concerns on 4th Embodiment of this invention. The front view shown in the state which expanded a part of lighting apparatus of FIG. 8, and the sealing member was removed. Sectional drawing shown along F10-F10 line in FIG. Sectional drawing shown along the F11-F11 line | wire in FIG. Sectional drawing which expands and shows a part of illuminating device which concerns on 5th Embodiment of this invention. The front view which shows the part shown by FIG. 12 in the state from which the sealing member was removed.

  A first embodiment of the present invention will be described with reference to FIGS.

  Reference numeral 1 in FIG. 1 indicates an illumination device that forms, for example, an LED package. The lighting device 1 includes, for example, a heat dissipation substrate that functions as a package substrate, such as a metal substrate 2, an insulating layer 5, a plurality of conductors 8, a plurality of LED chips such as semiconductor light emitting elements 11, bonding wires 17 and 18, and reflectors. 20 and a sealing member 22.

  The metal substrate 2 is made of Cu and has a predetermined shape, for example, a rectangular shape, in order to obtain a light emitting area required for the lighting device 1. The metal substrate 2 has, for example, the same number of element mounting portions 3 made of convex portions integrated with the metal substrate 2 as the semiconductor light emitting elements 11.

  The present invention is not limited to mounting one semiconductor light emitting element 11 on the element mounting portion 3, and a plurality of semiconductor light emitting elements 11 can be mounted side by side on one element mounting portion 3. . In that case, it may be a plurality of semiconductor light emitting elements 11 emitting the same color, or a plurality of semiconductor light emitting elements 11 emitting different colors. In the case where a plurality of semiconductor light emitting elements 11 emitting different colors are attached to one element attaching portion 3, three semiconductor light emitting elements 11 emitting red, yellow and blue light can be attached side by side. In the configuration in which a plurality of semiconductor light emitting elements 11 are mounted side by side on one element mounting portion 3, the total luminous flux of the lighting device 1 can be improved.

  The thickness A of the substrate main portion 2a (see FIG. 2) formed of a portion other than the element mounting portion 3 of the metal substrate 2 is, for example, 0.25 mm. The back surface of the substrate main portion 2a where the element mounting portion 3 is not provided is used as a heat transfer surface that is in surface contact with the heat dissipation surface or another heat dissipation member.

  The element mounting portion 3 is projected from the surface (one surface) of the substrate main portion 2a. As representatively shown in FIG. 2, the tip surface 3a of the element mounting portion 3 forms a flat surface parallel to the one surface. The element mounting portion 3 is gradually formed thicker from the tip end surface 3a to one surface of the metal substrate 2. In other words, the element mounting portion 3 is formed in a truncated cone shape whose cross-sectional area perpendicular to the height direction becomes gradually larger from the tip surface 3 a to one surface of the metal substrate 2. For this reason, the peripheral surface of the base portion forming the maximum diameter of the element mounting portion 3 forms an arc shape without forming a corner with the substrate main portion 2a and continues to the surface of the substrate main portion 2a.

  A light reflecting layer 4 is attached to the front end surface 3 a of the surface element mounting portion 3. The light reflecting layer 4 is made of an Ag thin film, and its thickness B is 0.003 mm to 0.005 mm. At the same time, the light reflectance of the Ag light reflection layer 4 is 90% or more.

  If the height of the element mounting portion 3 including the light reflecting layer 4 satisfies that the height position of the surface of the semiconductor light emitting element 11 (the upper surface in FIG. 2) is equal to or higher than the height position of the conductor 8, the insulating layer 5 However, it is preferable that the height of the surface of the insulating layer 5 is equal to or higher than the height position of the surface of the insulating layer 5. 8 is higher than the height position of the surface (upper surface in FIG. 2).

  For example, a white glass epoxy substrate is used for the insulating layer 5 in order to obtain light reflection performance. The thickness B of the insulating layer 5 may be 0.060 mm at the minimum, and is set to, for example, 0.25 mm in this embodiment. The insulating layer 5 has an escape hole 6 through which the element mounting portion 3 passes, as representatively shown in FIGS. 2 and 3. The escape hole 6 is circular, for example, and the diameter thereof is larger than the diameter of the root portion forming the maximum diameter of the element mounting portion 3. The same number of escape holes 6 as the element mounting portions 3 are provided. In this embodiment, the insulating layer 5 is a single layer, but it may be a double layer. For example, in the implementation with the minimum thickness, it is possible to use a laminate of two glass epoxy substrates having a thickness of 0.030 mm. Thereby, a higher withstand voltage than that of one insulating layer can be secured.

  The insulating layer 5 is laminated on the metal substrate 2 by being bonded to the surface (one surface) of the substrate main portion 2a using an adhesive 7. The adhesive 7 is insulative and is provided with a film thickness C of, for example, 0.005 mm or less between the insulating layer 5 and the substrate main portion 2a. In adhesion of the insulating layer 5, each escape hole 6 of the insulating layer 5 is fitted into each element mounting portion 3, so that the insulating layer 5 is laminated on the metal substrate 2 except for the element mounting portion 3. The attachment portion 3 is exposed in the escape hole 6.

  Since the insulating layer 5 does not hit the element mounting portion 3 due to the fitting, the insulating layer 5 does not float with respect to the metal substrate 2 and is properly superimposed, and the insulating layer 5 is positioned with respect to the metal substrate 2. Is done. In other words, when the insulating layer 5 is bonded to the metal substrate 2 by the escape hole 6 of the insulating layer 5 through which the element mounting portion 3 made of a convex portion passes, the insulating layer 5 is prevented from hitting the element mounting portion 3. The insulating layer 5 can be appropriately laminated on the metal substrate 2.

  When the application amount of the adhesive 7 is large in the pasting and a surplus is generated, a part of the surplus 7a (see FIGS. 2 and 3) is pushed out to the escape hole 6 by the pressure applied at the time of pasting. It is. More precisely, due to the shape of the element mounting portion 3, the protrusion 7a is formed in an annular gap inevitably formed between the side surface of the element mounting portion 3 and the escape hole 6. The part is pushed out and stored there and solidified. Thereby, since the insulating layer 5 is adhered also to the side surface of the element mounting portion 3, the lamination strength is increased. Moreover, since the surplus portion 7a functions as an insulating layer having a volume resistivity of 10-2 to 10-15 Ω · m, between the insulating layer 5 on which the conductor 8 is mounted and the side surface of the element mounting portion 3 as described later. Withstand voltage can be improved.

  The plurality of conductors 8 are provided to connect the semiconductor light emitting elements 11 in series as current-carrying elements to the semiconductor light emitting elements 11, and are opposite to the back surface bonded to the substrate main portion 2a of the insulating layer 5. It is formed by an etching process or the like. These conductors 8 are made of Cu, and are provided before the insulating layer 5 is bonded to the substrate main portion 2a. As shown in FIG. 1, the conductors 8 are formed in two rows at intervals of a predetermined interval in the longitudinal direction of the insulating layer 5. The plurality of conductors 8 in each row are alternately arranged with each escape hole 6 at a pitch of 4 mm, for example. An electric wire connecting portion 9 is integrally and continuously formed on the conductor 8 located on one end side of these rows. Each of these electric wire connecting portions 9 is individually soldered with electric wires leading to a power source (not shown).

  As representatively shown in FIGS. 2 and 3, each conductor 8 does not reach the edge of the escape hole 6 but is separated from the edge of the escape hole 6 by a predetermined distance. Thereby, a part of the white insulating layer 5 is exposed between the end 8a of the conductor 8 and the edge of the escape hole 6 closest to the end 8a. Here, the end 8a of the conductor 8 refers to the end of the light reflecting layer 10 described later that is attached to the conductor 8. In addition, the exposed surface of the insulating layer 5 is shown with the code | symbol 5a. Therefore, an insulation distance larger than the annular gap can be ensured between the end 8a of the conductor 8 and the element mounting portion 3, and light incident on the exposed surface 5a is reflected in the light extraction direction. Can do.

  The end 8a of the conductor 8 is located at a distance D of 0.25 mm to 6.0 mm from an electrode 14 or 15 described later of the semiconductor light emitting element 11. This is because the bonding machine recognizes the end 8a, more precisely the boundary between the end 8a and the insulating layer 5, with respect to the conductor 8 in wire bonding, which will be described later, at a position separated by a predetermined distance E with reference to that. Since the bonding wire is bonded, this is a consideration for suppressing the residual stress at the bonding portion of the bonding wire as much as possible.

  An Ag light reflecting layer 10 is deposited on the surface of each conductor 8. The light reflecting layer 10 is made of an Ag thin film having a reflectance of 90% or more, and has a thickness of 0.003 mm to 0.005 mm. The thickness G of the conductor 8 including the light reflection layer 10 is 0.012 mm to 0.018 mm. Both the light reflecting layer 10 on each conductor 8 and the light reflecting layer 4 of each element mounting portion 3 can be provided at a time by, for example, plating. In this case, since the conductor 8 and the element mounting portion 3 are made of Cu, the light reflecting layers 10 and 4 can be provided by plating without plating them. A resist film can be laminated on the surface of the light reflecting layer 10.

  Each semiconductor light emitting element 11 is made of, for example, a blue LED chip. This LED chip is a double-wire type using, for example, a nitride semiconductor, and is formed by laminating a semiconductor light emitting layer 13 on one surface of a light-transmitting element substrate 12 as shown in FIG. The element substrate 12 is made of, for example, a sapphire substrate. The semiconductor light emitting layer 13 is formed by sequentially stacking a buffer layer, an n-type semiconductor layer, a light emitting layer, a p-type cladding layer, and a p-type semiconductor layer on the back surface of the element substrate 12. The light emitting layer has a quantum well structure in which barrier layers and well layers are alternately stacked. An n-side electrode 14 is provided on the n-type semiconductor layer, and a p-side electrode 15 is provided on the p-type semiconductor layer. The semiconductor light emitting layer 13 does not have a reflective film, and can emit light in both the thickness direction of the semiconductor light emitting element 11 and can also emit light from the side surface of the element substrate 12 to the side.

  These semiconductor light emitting elements 11 are die-bonded to the front end surface 3a of each element mounting portion 3 on the other surface parallel to the one surface of the element substrate 12 using a die bond material 16 made of an adhesive such as a translucent silicone resin. Yes. Accordingly, the respective semiconductor light emitting elements 11 are arranged alternately with these conductors 8 at a pitch of 4 mm, for example, like the respective conductors 8.

  The thickness H of the die bond material 16 is 0.10 mm or less. The die bond material 16 serves as a resistance member for heat transfer from the semiconductor light emitting element 11 to the element mounting portion 3. However, since the die bond material 16 is extremely thin as described above, the thermal resistance of the die bond material 16 is substantially negligible. It is desirable that the thickness H of the die bond material 16 be as thin as possible without losing the bonding performance.

  The withstand voltage between the semiconductor light emitting layer 13 of the semiconductor light emitting element 11 and the element mounting portion 3 is secured not only by the die bond material 16 but also by the element substrate 12 made of sapphire much thicker than the die bond material 16. The thickness I of the semiconductor light emitting element 11 including the die bond material 16 is 0.09 mm, for example. By using such a semiconductor light emitting element 11, the height position of the semiconductor light emitting layer 13 is positioned higher than the light reflecting layer 10 on the surface of the conductor 8, and in the present embodiment, the entire semiconductor light emitting element 11 is on the surface of the conductor 8. It is positioned higher than the light reflecting layer 10.

  Due to the difference in height, in wire bonding described later, one end of the bonding wire is bonded to the electrodes 14 and 15 of the semiconductor light emitting layer 13 by ball bonding in a bonding machine, and the other end of the bonding wire is bonded to the conductor 8. At this time, the insulating layer 5 does not easily interfere with the movement of the bonding tool of the bonding machine, and the bonding wire is not forcibly pulled downward, so that wire bonding is easy.

  Furthermore, in a preferred configuration in which the entire semiconductor light emitting element 11 is disposed at a position higher than the surface of the insulating layer 5 as in the present embodiment, light emitted from the semiconductor light emitting element 11 to the periphery thereof is applied to the insulating layer 5. It is easy to insert around the escape hole 6 without being obstructed. Thereby, the light can be extracted by reflecting the light around the semiconductor light emitting element 11, which is advantageous in that the light extraction efficiency can be increased.

  The conductors 8 and the semiconductor light emitting elements 11 arranged alternately in the longitudinal direction of the metal substrate 2 are connected by bonding wires 17 provided by wire bonding. Further, the conductors 8 positioned on the other end side of the two conductor rows are connected by an end bonding wire 18 provided by wire bonding as shown in FIG. Accordingly, in the present embodiment, the semiconductor light emitting elements 11 are electrically connected in series.

  The lighting device 1 includes the metal substrate 2 having the light reflecting layer 4, the insulating layer 5 with the conductor 8 having the light reflecting layer 10, the plurality of semiconductor light emitting elements 11, the bonding wires 17, and the end bonding wires 18. The planar light source is formed.

  The reflector 20 is not individually provided for each one or several semiconductor light emitting elements 11, but is a single one surrounding all the semiconductor light emitting elements 11 on the insulating layer 5. As shown in FIG. 2, it is formed of a rectangular frame. The reflector 20 is bonded to the insulating layer 5. A part of the wire connecting portion 9 is located outside the reflector 20 in order to connect the wire. The inner peripheral surface of the reflector 20 is a light reflecting surface. Therefore, for example, white powder such as aluminum oxide is mixed in a synthetic resin that is a molding material of the reflector 20. The reflector 20 can use the light extracted in the light extraction direction as an attachment portion of a light distribution control member (not shown) such as a lens that controls the projection target.

  The sealing member 22 is injected into the reflector 20 and cured by heat treatment, and fills most of the portion located in the reflector 20 of the planar light source. The sealing member 22 is made of a translucent material such as a transparent silicone resin, and a phosphor is mixed therein if necessary. In this embodiment, since the semiconductor light emitting element 11 emits blue light, a phosphor (not shown) that is excited by this light and emits mainly yellow light is preferably mixed in a substantially uniformly dispersed state. .

  By this combination, a part of blue light emitted from the semiconductor light emitting layer 13 by lighting of the lighting device 1 passes through the sealing member 22 without hitting the phosphor, while the phosphor hit by the blue light is Since the yellow light is emitted by being excited by the blue color and the yellow light passes through the sealing member 22, the illumination device 1 can irradiate the white light by mixing these two colors having a complementary color relationship. In addition, since the reflector 20 has a frame shape, most of the light extracted from the lighting device 1 passes through the sealing member 22 without being reflected by the reflector 20, so that the loss of light due to reflection is small. It is also effective in improving the light extraction efficiency.

  In the illuminating device 1 having the above configuration, the surplus portion 7a of the adhesive 7 protrudes into the escape hole 11, so that the gap between the metal substrate 2 and the insulating layer 5 laminated thereon with the adhesive 7 is interposed. In addition, a gap corresponding to the thickness of the adhesive 7 is not formed in communication with the escape hole 6. For this reason, the air accumulated in the gap as in the case where there is a gap flows out into the sealing member 22 when the sealing member 22 is heated and cured, and bubbles are generated in the sealing member 22. It will never stay. If air bubbles remain in the sealing member 22, if moisture enters from the outside, the withstand voltage may be reduced, but this can be prevented.

  The illuminating device 1 having the above configuration illuminates each semiconductor light emitting element 11 by energizing each of the semiconductor light emitting elements 11 to emit light in the direction of the arrow in FIG. Each semiconductor light emitting element 11 generates heat during the lighting.

  By the way, the conductor 8 for guiding electric power to the semiconductor light emitting element 11 and the metal substrate 2 are electrically insulated by an insulating layer 5 provided therebetween. The insulating layer 5 is electrically insulated from the metal substrate 2 and the semiconductor light emitting element. The semiconductor light emitting element 11 is directly die-bonded to the element mounting portion 3 of the metal substrate 2.

  Therefore, the heat generated by each semiconductor light emitting element 11 is directly conducted to the metal substrate 2 without being disturbed by the insulating layer 5. More specifically, the heat of the semiconductor light-emitting element 11 passes through the die-bonding material 16 that is so thin that it does not substantially become thermal resistance, and then is transmitted to the element mounting portion 3 of the metal substrate 2 through the Ag light reflecting layer 4. It is done. Moreover, the element mounting portion 3 of the metal substrate 2 gradually becomes thicker from the tip surface 3a to which the semiconductor light emitting element 11 is die-bonded to the substrate main portion 2a of the metal substrate 2, in other words, the cross-sectional area of the element mounting portion 3 is the substrate. Since it becomes so large that it approaches the main part 2a, the heat conduction from the semiconductor light emitting element 11 toward the back surface of the metal substrate 2 becomes easier. The heat of the metal substrate 2 is released from the back surface of the metal substrate 2 to the outside.

  In this way, the heat of the semiconductor light emitting element 11 is released to the outside through the metal substrate 2 with high efficiency, so that the temperature rise of each semiconductor light emitting element 11 is effectively suppressed, and the temperature of each semiconductor light emitting element 11 is set as designed. Can be maintained. Therefore, a decrease in the light emission efficiency of each semiconductor light emitting element 11 and a variation in the amount of light emitted from each semiconductor light emitting element 11 are suppressed, and as a result, color unevenness of light extracted from each semiconductor light emitting element can be suppressed.

  Each of the semiconductor light emitting elements 11 having the above-described structure emits light in all directions, and is separated from the light emitted in the front direction, that is, the light extraction direction opposite to the metal substrate 2, that is, the metal substrate 2. The light emitted toward is stronger.

  Then, most of the light emitted in the reverse direction passes through the translucent die-bonding material 16 and enters the light reflecting layer 4 made of an Ag plating layer having a light reflectance of 90% or more, and this light reflecting layer. 4 is reflected in the light extraction direction. Such high-efficiency reflection directly under the semiconductor light emitting element 11 can further improve the light extraction efficiency. Incidentally, as can be seen from FIG. 4 showing the relationship between the reflectance immediately below the semiconductor light-emitting element 11 and the light flux, the intensity of light extracted with respect to light having a wavelength of 460 nm (relative emission intensity) increases as the reflectance increases. As a result of the measurement, it was clarified that the reflectance immediately below the semiconductor light emitting element 11 was 91.35%.

  In addition, a part of the light emitted in the reverse direction and a part of the light emitted from the phosphor in the sealing member 22 enter the white insulating layer 5, and light is extracted by the insulating layer 5. Reflected in the direction. In addition, a part of the light directed in the back direction is incident on the light reflecting layer 10 made of an Ag plating layer covering the conductor 8 and is reflected by the light reflecting layer 10 in the light extraction direction. Furthermore, the periphery of the escape hole 6 of the insulating layer 5 is not partially covered with the conductor 8, and has an exposed surface 5 a between the conductor 8 and the escape hole 6. In other words, since the periphery of the escape hole 6 can be regarded as a continuous white reflecting surface without interruption along the circumferential direction, the light incident thereon can be reflected in the light extraction direction.

  Incidentally, as can be seen from FIG. 5 showing the relationship between the reflectance around the semiconductor light emitting element 11 and the luminous flux, the intensity of the extracted light (relative light emission) increases as the average reflectance of light having a wavelength of 400 nm to 740 nm increases. As a result of the measurement, it was clarified that the reflectivity around the semiconductor light emitting element 11 was 93.7%.

  4 and 5, it is clear that the emission intensity decreases as the reflectance decreases, and conversely, the emission intensity increases as the reflectance increases. 10 and the high reflection characteristics of the white insulating layer 5 can improve the light emission efficiency (light extraction efficiency) of the lighting device 1. Incidentally, as a result of the experiment, it was confirmed that when the power consumption of the illumination device 1 is 0.06 W, illumination can be performed with a luminous flux of 7.4 lm and a light emission efficiency of 125 lm / W.

  Therefore, the illumination device 1 having the above-described configuration suppresses a decrease in light emission efficiency due to a temperature rise of each semiconductor light emitting element 11 due to high heat conduction, and has a high reflection characteristic of light emitted to the back side of each semiconductor light emitting element 11. The extraction efficiency can be improved.

  Moreover, since the die-bonding material 16 obtained by die-bonding the semiconductor light-emitting element 11 to the element mounting portion 3 of the metal substrate 2 is a transparent silicone resin, the possibility that the die-bonding material 16 is deteriorated with discoloration due to heat is extremely small. Therefore, the extraction efficiency of the light reflected and extracted by the light reflecting layer 4 can be maintained over a long period of time.

  6 and 7 show other embodiments of the present invention which are different from each other. Since these embodiments are the same as the first embodiment including matters not shown except for the items described below, the same parts as those in the first embodiment are denoted by the same reference numerals and the description thereof is omitted.

  In the second embodiment shown in FIG. 6, the reflector 20 has a plurality of reflection holes 21 (only one is shown as a representative). In these reflection holes 21, the semiconductor light emitting elements 11 die-bonded to the element mounting portion 3 are individually arranged. Each reflection hole 21 is formed as a tapered hole whose diameter gradually increases as it goes to the light extraction side. Further, the sealing member 22 is filled and solidified in each of the reflection holes 21. Except for the matters described above, the second embodiment is the same as the first embodiment.

  Therefore, since the lighting device 1 of the second embodiment can obtain the same operation as that described in the first embodiment, while suppressing the decrease in the light emission efficiency due to the temperature rise of each semiconductor light emitting element 11 due to the high thermal conductivity. The light extraction efficiency can be improved by the high reflection characteristic of the light emitted to the back side of each semiconductor light emitting element 11.

  Moreover, in the lighting device 1 of the second embodiment, the amount of the sealing member 22 used can be reduced. In addition, the reflector 20 can be used as an attachment portion of a light distribution control member such as a lens that controls the light extracted in the light extraction direction with respect to the light projection target.

  In the third embodiment shown in FIG. 7, the reflector is omitted to simplify the configuration. Then, an uncured sealing member is dropped (botted) for each semiconductor light emitting element 11 from a dispenser (not shown), and the semiconductor light emitting elements 11 are individually sealed with the sealing member 22. The uncured sealing member is dripped and then cured in a hemispherical shape. Except for the matters described above, the second embodiment is the same as the first embodiment.

  Therefore, since the lighting device 1 of the third embodiment can obtain the same operation as that described in the first embodiment, while suppressing the decrease in the light emission efficiency due to the temperature rise of each semiconductor light emitting element 11 due to the high thermal conductivity. The light extraction efficiency can be improved by the high reflection characteristic of the light emitted to the back side of each semiconductor light emitting element 11. Moreover, in the lighting device 1 of the third embodiment, the amount of the sealing member 22 used can be reduced.

  8 to 11 show a fourth embodiment of the present invention. Since the fourth embodiment is the same as the first embodiment except for the matters described below, including the items not shown, the same parts as those in the first embodiment are denoted by the same reference numerals and the description thereof is omitted. .

  In the fourth embodiment, an electrically insulating resist layer 25 is added. The resist layer 25 is made of a synthetic resin mixed with a white powder such as aluminum oxide. The light reflectance of the white resist layer 25 is 80% or more, and the thickness of the resist layer 25 is approximately 0.1 mm, for example.

  The resist layer 25 is laminated on the conductor 8 and the insulating layer 5 covered with the light reflecting layer 4, and has a plurality of openings 25 a, that is, the same number of openings 25 a as the element mounting portions 3. The laminated portion laminated on the conductor 8 of the resist layer 25 and the laminated portion laminated on the insulating layer 5 are integrally continuous. At the same time, the height position of the two laminated portions from the insulating layer 5 differs depending on the thickness of the conductor 8 on which the light reflecting layer 10 is laminated, as can be seen from the comparison between FIG. 10 and FIG.

  The opening 25 a is circular as illustrated in FIG. 9, and its diameter is several times larger than the element mounting portion 3. When viewed from the front as shown in FIG. 9, a single element mounting portion 3 is provided at the center of each opening 25a, and a semiconductor light emitting element mounted on the element mounting portion 3 11 and a pair of bonding wires 17 connected thereto. Accordingly, a connection portion between the bonding wire 17 and the conductor 8 disposed so as to sandwich the semiconductor light emitting element 11 is also provided in the opening 25a. Therefore, the resist layer 25 is provided except for the element attachment portion 3 and the periphery thereof, and the end portion of the conductor 8 positioned in the periphery.

  The semiconductor light emitting element 11 disposed in the opening 25a, the pair of bonding wires 17, and the ends of the conductors 8 connected to the bonding wires 17 are sealed with a sealing member 22 provided for each opening 25a. . The sealing member 22 is provided by dripping (potting) an uncured sealing member from a dispenser (not shown) for each opening 25a, and is cured by presenting a substantially hemispherical shape after dropping. is there. In the fourth embodiment, the reflector 20 shown in FIG. 8 may be omitted. Except for the matters described above, the second embodiment is the same as the first embodiment.

  Accordingly, the illumination device 1 of the fourth embodiment can obtain the same operation as the operation described in the first embodiment. Therefore, each semiconductor light emitting element 11 can be prevented from lowering the light emission efficiency due to the temperature rise, and each semiconductor The light extraction efficiency can be improved by the high reflection characteristic of the light emitted to the back side of the light emitting element 11.

  In addition, since the resist layer 25 that prevents at least oxidation among the oxidation and sulfidation of the conductor 8 on which the light reflecting layer 10 is laminated is white, the light inserted from the semiconductor light emitting element 11 into the resist layer 25 can be reflected. It is preferable for improving the light extraction efficiency.

  Furthermore, since the sealing member 22 is provided for each of the plurality of openings 25a of the resist layer 25, the sealing member 22 is provided over all the semiconductor light emitting elements 11 and the conductors 8 as in the first embodiment. In comparison, the amount of the sealing member 22 mixed with the phosphor can be reduced.

  In addition, since the sealing member 22 is provided by being supplied to the opening 25a by potting, the opening 25a indicates that the potted uncured sealing member spreads outside the opening 25a of the resist layer 25 until it is cured. It is possible to block at the edge of. As a result, the rising height of the sealing member 22 is appropriately regulated, the thickness of the sealing member 22 on the semiconductor light emitting element 11 can be increased, and a part of the bonding wire 17 protrudes from the sealing member 22. You can avoid fear.

  12 and 13 show a fifth embodiment of the present invention. Since the fifth embodiment is the same as the first embodiment except for the matters described below, including the items not shown, the same parts as those in the first embodiment are denoted by the same reference numerals and the description thereof is omitted. .

  In the fifth embodiment, a resin adhesive sheet is used for the adhesive 7. The light reflectivity of the adhesive 7 is lower than the light reflectivity of the white insulating layer 5. For this reason, for example, a brown adhesive 7 is employed. The adhesive 7 is formed in advance with a plurality of holes corresponding respectively to the element mounting portions 3 made of convex portions. The size of each hole is larger than the diameter of the base of the element mounting portion 3. The thickness C ′ of the adhesive sheet that forms the adhesive 7 is several times thicker than the film thickness of the adhesive described in the first embodiment.

  The adhesive 7 is stacked on the surface of the metal substrate 2 so that the element mounting portion 3 passes through each hole, and the three layers are pressed in the thickness direction with the insulating layer 5 stacked thereon. Accordingly, the metal substrate 2 and the insulating layer 5 are bonded. As a result of this adhesion, a portion on the edge side of the hole of the adhesive 7 forms an excess 7a and protrudes into the escape hole 6 of the insulating layer 5 as shown in FIG. In other words, the surplus dimension 7a with respect to the escape hole 6 is approximately 0.2 μm. As shown in FIG. 12, the surplus portion 7 a formed by the protruding portion rises in the escape hole 6 so as to cover the portion on the substrate main part 2 a side of the surface on which the escape hole 6 is formed.

  Further, in the fifth embodiment, the side light reflecting layer 4 a is laminated on the side surface of each element mounting portion 3. The side light reflecting layer 4a extends over the reflecting layer 4 laminated on the tip end surface 3a of the element mounting portion 3 and the surplus portion 7a. The side light reflection layer 4 a is made of the same Ag plating layer as the reflection layer 4, and is provided together with the reflection layer 4 by electroless plating. Since the electroless plating is performed in a state where the insulating layer 5 is bonded to the metal substrate 2, the side light reflection layer 4 a is not attached to the surplus portion 7 a of the adhesive 7. For this reason, the side light reflection layer 4a does not reach the portion covered with the surplus portion 7a of the substrate main portion 2a. Except for the matters described above, the second embodiment is the same as the first embodiment.

  Therefore, since the illumination device 1 of the fifth embodiment can obtain the same operation as the operation described in the first embodiment, each semiconductor light-emitting element 11 can be prevented from lowering the light emission efficiency due to the temperature rise, and each semiconductor The light extraction efficiency can be improved by the high reflection characteristic of the light emitted to the back side of the light emitting element 11.

  In addition, since the side light reflecting layer 4a is provided on the element mounting portion 3 formed of a convex portion continuously to the light reflecting layer 4 on the tip end surface 3a, the side light reflecting layer 4a further increases the light extraction efficiency. It can be improved. That is, the phosphor mixed in the sealing member 22 is excited by the light emitted from the semiconductor light emitting element 11 and emits light to the surroundings. Part of the light emitted from the phosphor enters the side surface of the element mounting portion 11. Therefore, the incident light is reflected by the side light reflection layer 4a made of Ag in the light extraction direction, so that the light extraction efficiency can be improved. Incidentally, assuming that the total luminous flux of the illumination device when the light reflection layer 4 and the side light reflection layer 4a are not provided in each element mounting portion 3 is 100, the total luminous flux of the illumination device 1 of the fifth embodiment is 110, It was confirmed that the light extraction efficiency can be improved by 10%.

  In the fifth embodiment, the amount of protrusion of the surplus portion (projection portion) 7 a of the adhesive 7 is set so that the height position of the surface is close to the same height as the surface of the insulating layer 5. You can also Even when the surplus part (projection part) 7a is projected to such a height, the top of the element mounting part 5 protrudes from the surface of the surplus part (projection part) 7a, and the side light The entire reflecting surface 4a is not covered with the surplus portion (projecting portion) 7a. Therefore, even when the adhesive 7 is colored, it is possible to improve the light extraction efficiency by obtaining a reflection effect in the light extraction direction by the side light reflecting surface 4a.

  Moreover, when the height of the surplus portion 7a is close to the same height as the surface of the insulating layer 5, when the uncured sealing member 22 is filled, air accumulates in the escape hole 11. It becomes difficult. Therefore, in combination with the fact that no gap is formed between the metal substrate 2 and the insulating layer 5 as described above, it is possible to effectively suppress the remaining of bubbles in the hardened stop member 22.

  Furthermore, in the fifth embodiment, the color of the surplus portion (the protruding portion) 7a of the adhesive layer 7 protruding into the escape hole 6 and the color of the portion around the escape hole 6 of the insulating layer 5 are different. Therefore, the difference between these colors can be easily recognized as a reference for positioning when the die hole is bonded to the boundary between the insulating layer 5 and the surplus portion 7a, that is, the escape hole 6.

  That is, when the semiconductor light emitting element 11 is die-bonded to the element mounting portion 3 in the escape hole 7, the escape hole 6 is imaged by an imaging camera provided in a mounting machine (not shown) for mounting the semiconductor light emitting element 11, and the mounting machine is provided. The image recognition unit recognizes the captured image and pattern matching between the reference image stored in advance in the image recognition unit and the recognition image, thereby obtaining a positioning reference when die-bonding the semiconductor light emitting element 11 The mounting machine die-bonds the semiconductor light-emitting element 11 at a position designated based on that.

  As described above, the color of the surplus portion (projection portion) 7a is a brown system having a low light reflectance with respect to the white insulating layer 5, and therefore, in the image recognition, the surplus portion (devoured portion). The boundary with the protruding portion 7a, that is, the escape hole 6 can be easily recognized. Accordingly, it is possible to reliably acquire a reference for positioning when the semiconductor light emitting element 11 is die-bonded to the element mounting portion 3 in the escape hole 6. As a result, the collation rate (accuracy rate of pattern matching) in the image recognition can be set to 90% or more.

  In order to reliably obtain the positioning reference as described above, the configuration of the fifth embodiment is performed by forming the adhesive 7 having the surplus portion 7a protruding into the escape hole 6 from a transparent material. You can also.

  In this case, the color of the substrate main portion 2a that is imaged through the surplus portion 7a that is the protruding portion is the color of the material forming the main portion 2a. That is, if the heat dissipation substrate is made of copper, it is a copper brown color, and if it is made of a carbon material, it is a black color. These colors are different from the color of the white insulating layer 5, and the light reflectance thereof is lower than the light reflectance of the insulating layer 5.

  In this way, the color of the substrate main portion 2a seen through the surplus portion (projection portion) 7a of the adhesive layer 7 protruding into the escape hole 6 and the portion around the escape hole 6 of the insulating layer 5 are shown. Since the colors are different, the difference between these colors can be easily recognized as a reference for positioning when the die hole is bonded to the boundary between the insulating layer 5 and the substrate main portion 2a, that is, the escape hole 6. Therefore, the positioning reference when the semiconductor light emitting element 11 is die-bonded to the element mounting portion 3 in the escape hole 6 can be reliably acquired.

  DESCRIPTION OF SYMBOLS 1 ... Illuminating device, 2 ... Metal substrate (heat dissipation board), 2a ... Substrate main part, 3 ... Element attachment part, 3a ... Front end surface of element attachment part, 4 ... Light reflection layer, 4a ... Side light reflection layer, 5 DESCRIPTION OF SYMBOLS ... Insulating layer, 5a ... Exposed surface, 6 ... Escape hole, 7 ... Adhesive, 7a ... Excess part of adhesive (extruding part), 8 ... Conductor, 10 ... Light reflecting layer, 11 ... Semiconductor light emitting element, 12 DESCRIPTION OF SYMBOLS ... Element board | substrate, 13 ... Semiconductor light emitting layer, 16 ... Die bond material, 17 ... Bonding wire, 22 ... Sealing member, 25 ... Resist layer, 25a ... Opening of resist layer

Claims (1)

A heat dissipation board integrally having an element mounting portion;
An insulating layer laminated on the heat dissipation substrate excluding the element mounting portion;
A conductor provided on the insulating layer and having a light reflecting layer on a surface provided such that the insulating layer is exposed between an end of the insulating layer and the element mounting portion;
A semiconductor light emitting device that is die-bonded to the device mounting portion such that the height position of the upper surface is equal to or higher than the height of the insulating layer and the conductor;
A bonding wire connecting the semiconductor light emitting element and the conductor;
A translucent sealing member provided by sealing the semiconductor light emitting element;
An illumination device comprising:

Images