JP2010131674A - Joined body forming method and joined body - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a joined body forming method for firmly and efficiently joining two base materials with each other with high dimensional accuracy and under low temperature, and efficiently separating the base materials from each other after the use, and to provide a reliable joined body formed by firmly joining two base materials with each other with high dimensional accuracy. <P>SOLUTION: The joined body forming method comprises: a step of depositing joining films 31, 32 consisting of copper and organic components with the copper content being ≥90 at.% and <99 at.% on a first substrate (base material) 21 and a second substrate (base material) 22 by using a chemical vapor deposition method; and a step of obtaining a joined body by bonding the joining films 31, 32 with each other by applying the compressive force between the first substrate 21 and the second substrate 22 while the first substrate 21 and the second substrate 22 are brought into contact with each other so that the joining films 31, 32 are opposite to each other. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for forming a joined body and a joined body.

When joining (adhering) two members (base materials) to obtain a joined body, there are many conventional methods using an adhesive such as an epoxy adhesive, a urethane adhesive, or a silicone adhesive. It is used.
The adhesive generally exhibits excellent adhesiveness regardless of the material of the members to be joined. For this reason, members composed of various materials can be bonded in various combinations.

For example, when such a joined body is applied to a droplet discharge head (inkjet recording head) included in an inkjet printer, the droplet discharge head is made of a different material such as a resin material, a metal material, and a silicon-based material. The parts are assembled by bonding them using an adhesive.
When the members are bonded together using the adhesive as described above, a liquid or paste adhesive is applied to the bonding surface, and the members are bonded together via the applied adhesive. Thereafter, the members are bonded together by curing (solidifying) the adhesive by the action of heat or light.

However, the joining using such an adhesive has the following problems.
・ Low bonding strength ・ Low dimensional accuracy ・ Long curing time, so it takes a long time to bond In addition, in many cases, it is necessary to use a primer to increase the bonding strength. Cost and complexity.

On the other hand, there is a solid bonding method as a method of forming a bonded body without using an adhesive.
Solid bonding is a method of directly bonding members without an intermediate layer such as an adhesive (see, for example, Patent Document 1).
According to such solid bonding, since an intermediate layer such as an adhesive is not used, a bonded body with high dimensional accuracy can be obtained.

However, solid bonding has the following problems.
-There are restrictions on the material of the members to be joined-In the joining process, heat treatment is performed at a high temperature (for example, about 700 to 800 ° C)-The atmosphere in the joining process is limited to a reduced pressure atmosphere. There is a need for a method of forming a joined body that can join members firmly with high dimensional accuracy and efficiently at low temperatures regardless of the material of the provided members.
Furthermore, the joined body obtained by such a method for forming a joined body is required to be used for recycling the joined body after use from the viewpoint of environmental problems. In order to improve the recycling rate of this joined body, It is necessary to join the members by a method for forming a joined body that can efficiently peel off the members.

JP-A-5-82404

  The object of the present invention is to join two substrates firmly with high dimensional accuracy and efficiently at low temperature, and to efficiently peel off these substrates after use. And a highly reliable joined body in which two base materials are firmly joined with high dimensional accuracy.

Such an object is achieved by the present invention described below.
The method for forming a bonded body according to the present invention comprises, on a first base material and a second base material, each of which is composed of copper and an organic component using a chemical vapor deposition method, and contains the copper. The rate is 90 at. % And 99 at. Forming a bonding film that is less than%,
A compression force is applied between the first base material and the second base material in a state where the first base material and the second base material are in contact with each other so that the bonding films face each other. And a step of obtaining a bonded body by bonding the bonding films together.
Thereby, while being able to join to a to-be-adhered body firmly with high dimensional accuracy and efficiently at low temperature, the joined body which can peel these base materials efficiently after use is formed. be able to.

In the method for forming a bonded body according to the present invention, in the step of forming the bonding film, the bonding film is preferably formed so that the surface roughness Ra (defined in JIS B 0601) is 1 to 30 nm. .
Thereby, the increase of the contact area which the surfaces of each bonding film formed in the 1st base material and the 2nd base material contact can be aimed at.

In the method for forming a joined body according to the present invention, in the step of obtaining the joined body, the compressive force applied between the first base material and the second base material is preferably 1 to 100 MPa.
If set within such a range, the bonding films can be reliably bonded to each other.
In the method for forming a joined body of the present invention, in the step of obtaining the joined body, the time for applying the compressive force is preferably 5 to 180 minutes.
If set within such a range, the bonding films can be reliably bonded to each other.

In the method for forming a bonded body according to the present invention, it is preferable to heat the bonding film in the step of obtaining the bonded body.
As a result, heating energy is applied to the bonding films before bonding, and bonding of the bonding films by applying a compressive force to each bonding film is performed more smoothly.
In the method for forming a bonded body of the present invention, the temperature for heating the bonding film is preferably 90 to 200 ° C.
Accordingly, the bonding films can be more smoothly bonded while reliably preventing the first base material and the second base material from being deteriorated or deteriorated by heat.

In the method for forming a joined body according to the present invention, in the step of obtaining the joined body, a compressive force applied between the first base material and the second base material is 50 [MPa], and the compressive force is The application time is Y [min], the temperature at which the bonding film is heated is T [K], and the copper content is X [at. %] And the gas constant is R [J / (mol · K)], 1 / Y ≧ 1.43 × 10 ⁹ exp [−6.60 × 10 ⁻² (100−X) −82 × 10 ³ / RT] is preferably set so as to satisfy the relationship.
Thereby, it is possible to reliably obtain a joined body in which the first base material and the second base material are joined via the joining film in which the joining films provided on the base materials are bound to each other.
In the method for forming a joined body according to the present invention, in the step of obtaining the joined body, the compressive force is preferably applied in an air atmosphere.
Thereby, it is not necessary to spend time and cost to control the atmosphere, and the compression force can be applied more easily.

In the bonded body forming method of the present invention, the bonding film is preferably formed by a metal organic chemical vapor deposition method using an organic metal material as a raw material.
If the metal organic chemical vapor deposition method is used, it is composed of copper and an organic component, and the content of copper contained in the film is 90 at. % And 99 at. The bonding film of less than% can be reliably formed by a relatively simple operation of appropriately setting the conditions for forming the film.

In the method for forming a bonded body according to the present invention, the organometallic material is preferably a metal complex.
If a metal complex is used as the organometallic material, a desired amount of an organic substance contained in the organometallic material can be used as an organic component constituting the joining film by appropriately setting conditions for forming the joining film. It can be left relatively easily.

In the method for forming a bonded body according to the present invention, it is preferable that the organic component is one in which a part of the organic substance contained in the organometallic material remains.
If a part of the organic substance remains as an organic component constituting the bonding film, the active site can be surely present in the copper atoms contained in the bonding film, and as a result, the bonding film is more smoothly bonded. It is guessed that it will be done.
In the method for forming a bonded body of the present invention, the average thickness of the bonding film is preferably 1 to 1000 nm.
Thereby, these can be joined more firmly, preventing that the dimensional accuracy of the joined body with which the 1st base material and the 2nd base material were joined significantly falls.

In the method for forming a joined body according to the present invention, it is preferable that the first base material and the second base material each have a plate shape.
As a result, the base material is easily bent, and even if the opposing base material is deformed by stress or the like, the base material can be sufficiently deformed along the deformed shape. Get higher. Moreover, the stress which arises in a joining interface by bending a base material can be relieved to some extent.

In the method for forming a bonded body according to the present invention, at least a portion of the first base material and the second base material on which the bonding film is formed is composed mainly of a silicon material, a metal material, or a glass material. Is preferred.
Thereby, sufficient bonding strength can be obtained without surface treatment.
In the method for forming a bonded body according to the present invention, the surface of the first base material and the second base material provided with the bonding film is subjected in advance to a surface treatment for improving adhesion with the bonding film. It is preferable.
Thereby, the surface of each substrate can be cleaned and activated, and the bonding strength between the bonding film and each substrate can be increased.
In the bonded body forming method of the present invention, the surface treatment is preferably a plasma treatment.
Thereby, in order to form a joining film | membrane, the surface of each base material can be optimized especially.

In the method for forming a bonded body according to the present invention, between the first base material and the second base material, and the bonding films provided on the first base material and the second base material, respectively. It is preferable that an intermediate layer is interposed.
Thereby, a highly reliable joined body can be formed.
In the method for forming a joined body according to the present invention, the intermediate layer is preferably composed of an oxide-based material as a main material.
Thereby, especially the joint strength between each base material and a joining film | membrane can be raised.
The joined body of the present invention is formed by the joined body forming method of the present invention.
Thereby, it can be set as the reliable joining body formed by firmly joining a 1st base material and a 2nd base material with high dimensional accuracy.

It is a figure (longitudinal sectional view) for demonstrating the formation method of the conjugate | zygote of this invention. It is a figure (longitudinal sectional view) for demonstrating the formation method of the conjugate | zygote of this invention. It is a longitudinal cross-sectional view which shows typically the film-forming apparatus used when forming the joining film | membrane comprised with copper and an organic component. It is the graph which showed the relationship between the temperature at the time of bonding films bonding, and time. It is a disassembled perspective view which shows the inkjet recording head (droplet discharge head) obtained by applying the conjugate | zygote of this invention. It is sectional drawing which shows the structure of the principal part of the inkjet recording head shown in FIG. It is the schematic which shows embodiment of an inkjet printer provided with the inkjet recording head shown in FIG. It is a perspective view which shows the wiring board obtained by applying the conjugate | zygote of this invention.

Hereinafter, a method for forming a joined body and a joined body according to the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
First, a method for forming a joined body according to the present invention will be described.
<Method of forming joined body>
The method for forming a bonded body according to the present invention comprises a first base material (member) and a second base material (member), each of which is composed of copper and an organic component using a chemical vapor deposition method. The copper content is 90 at. % And 99 at. % Of the first base material and the first base material in a state where the first base material and the second base material are in contact with each other so that the bonding films face each other. And applying a compressive force to the second base materials to bind the bonding films together to obtain a bonded body.
By this process, the bonding films formed on the respective base materials can be bonded to each other, and a bonded body in which the first base material and the second base material are bonded by the bonded bonding films is obtained. Can do.

  Such a method for forming a joined body of the present invention can join the first base material and the second base material firmly and efficiently with high dimensional accuracy. Then, by forming a joined body using such a joined body forming method, it is possible to obtain a highly reliable joined body in which two base materials are firmly joined with high dimensional accuracy. Furthermore, since the joined body obtained by the method for forming a joined body of the present invention can be efficiently separated from each other using a method as described later, Separately, it can be used for recycling. As a result, it is possible to improve the recycling rate of the joined body.

Hereinafter, each process of the formation method of the conjugate | zygote of this invention and the conjugate | zygote formed by the formation method of this conjugate | zygote are demonstrated.
1 and 2 are diagrams (longitudinal sectional views) for explaining a method of forming a bonded body according to the present invention, and FIG. 3 is a component used when forming a bonding film composed of copper and an organic component. FIG. 4 is a longitudinal sectional view schematically showing the membrane device, and FIG. 4 is a graph showing the relationship between temperature and time when the bonding films are bonded together. In the following description, the upper side in FIGS. 1, 2 and 3 is referred to as “upper” and the lower side is referred to as “lower”.

[1] First, a first substrate (base material) 21 and a second substrate (base material) 22 are prepared, and chemical vapor deposition is performed on the first substrate 21 and the second substrate 22, respectively. Using a film method, it is composed of copper and organic components, and the copper content is 90 at. % And 99 at. The bonding films 31 and 32 that are less than% are formed (see FIG. 1A).
In the following description, “first substrate 21 and second substrate 22” are collectively referred to as “substrate 2”, and two “bonding films 31, 32” and two “bonding films 31, A combination of “32” may be collectively referred to as “bonding film 3”.

The substrate 21 and the substrate 22 are for bonding to each other through the bonding film 3 to obtain the bonded body 5, as long as they have rigidity enough to support the bonding films 31 and 32 before being bonded. , Any material may be used.
Specifically, the constituent material of the substrate 2 is polyolefin, such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, modified polyolefin, polyvinyl chloride, polyvinylidene chloride. , Polystyrene, polyamide, polyimide, polyamideimide, polycarbonate, poly- (4-methylpentene-1), ionomer, acrylic resin, polymethyl methacrylate, acrylonitrile-butadiene-styrene copolymer (ABS resin), acrylonitrile-styrene copolymer Polymer (AS resin), butadiene-styrene copolymer, polyoxymethylene, polyvinyl alcohol (PVA), ethylene-vinyl alcohol copolymer (EVOH), polyethylene terephthalate (PET) Polyester such as polyethylene naphthalate, polybutylene terephthalate (PBT), polycyclohexane terephthalate (PCT), polyether, polyetherketone (PEK), polyetheretherketone (PEEK), polyetherimide, polyacetal (POM), polyphenylene oxide , Modified polyphenylene oxide, polysulfone, polyethersulfone, polyphenylene sulfide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins, styrene, polyolefin, polyvinyl chloride , Polyurethane, polyester, polyamide, polybutadiene, trans polyisoprene, fluoro rubber, chlorinated polyethylene Various thermoplastic elastomers such as epoxy resins, epoxy resins, phenol resins, urea resins, melamine resins, aramid resins, unsaturated polyesters, silicone resins, polyurethanes, etc., or copolymers, blends, polymer alloys, etc. mainly comprising these Resin-based materials, metals such as Fe, Ni, Co, Cr, Mn, Zn, Pt, Au, Ag, Cu, Pd, Al, W, Ti, V, Mo, Nb, Zr, Pr, Nd, Sm Or alloys containing these metals, carbon-based materials such as carbon steel, stainless steel, indium tin oxide (ITO), gallium arsenide, silicon-based materials such as single crystal silicon, polycrystalline silicon, amorphous silicon , Silicate glass (quartz glass), alkali silicate glass, soda lime glass, potash lime glass, lead (alkali) glass, barium glass Glass materials such as borosilicate glass, ceramic materials such as alumina, zirconia, ferrite, silicon nitride, aluminum nitride, boron nitride, titanium nitride, silicon carbide, boron carbide, titanium carbide, tungsten carbide, graphite Such a carbon-based material, or a composite material obtained by combining one or more of these materials.

Further, the surface of the substrate 2 may be subjected to a plating treatment such as Ni plating, a passivation treatment such as a chromate treatment, or a nitriding treatment.
Further, the shape of the substrate (base material) 2 may be any shape as long as it has a surface for supporting the bonding film 3, and is not limited to a plate-like shape as in the present embodiment. That is, the shape of the base material may be, for example, a block shape (block shape) or a rod shape.

As shown in FIG. 1A, since the substrate 2 has a plate shape, the substrate 2 is easily bent, and even if the opposing substrate 2 is deformed by stress or the like, Since it becomes sufficiently deformable along the deformed shape, the adhesion between the first substrate 21 and the second substrate 22 becomes higher. In addition, the adhesion between the substrate 2 and the bonding film 3 is enhanced, and the stress generated at the bonding interface can be relaxed to some extent when the substrate 2 is bent.
In this case, the average thickness of the substrate 2 is not particularly limited, but is preferably about 0.01 to 10 mm, and more preferably about 0.1 to 3 mm.

In the present invention, the bonding films 31 and 32 are positioned between the first substrate 21 and the second substrate 22 in the next step [2], and the bonding films 31 and 32 are bonded to each other. The first substrate 21 and the second substrate 22 are joined together.
Both of the bonding films 31 and 32 are formed by using a chemical vapor deposition method, and the constituent material is composed of copper and an organic component, and the content ratio of copper contained in the film. Is 90 at. % And 99 at. %. Since the bonding films 31 and 32 are bonded (integrated) to each other when a compressive force is applied in a state where they are in contact with each other, the bonded bonding is performed. The first substrate 21 and the second substrate 22 can be firmly and efficiently bonded with high dimensional accuracy via the film 3.

  The bonding film 3 has a copper content of 90 at. % Or more, and it is in a solid state having no fluidity. For this reason, the thickness and shape of the adhesive layer (bonding film 3) hardly change as compared with a liquid or viscous liquid (semi-solid) adhesive having fluidity. Therefore, the dimensional accuracy of the bonded body 5 in which the first substrate 21 and the second substrate 22 are bonded to each other with the bonding film 3 is significantly higher than that in the related art. Furthermore, since the time required for curing the adhesive is not required, strong bonding can be achieved in a short time.

Furthermore, in the present invention, the bonding film 3 composed of copper and organic components has a copper content of 90 at. % And 99 at. %. That is, the organic component content in the film is 1 at. % And 10 at. % Or less.
By adopting a configuration including copper and an organic component within such a range, it is possible to realize bonding between the bonding films 31 and 32 at a low temperature, as will be described later, and the first substrate 21 and the second substrate 21. It is possible to securely bond the substrates 22 to each other via the bonding film 3 with high dimensional accuracy.

In addition, since the copper content is within such a range, the bonding film 3 can be used as a wiring board in a bonded body described later while maintaining excellent conductivity and thermal conductivity of copper. Can be suitably applied to, for example, the joining of wirings and terminals included in and members that require thermal conductivity.
Specifically, the bonding film 3 preferably has a resistivity of 1 × 10 ⁻³ Ω · cm or less, and more preferably 1 × 10 ⁻⁶ Ω · cm or less. Further, the thermal conductivity is preferably 50 W · m ⁻¹ · K ⁻¹ or more, and more preferably 200 W · m ⁻¹ · K ⁻¹ or more.

  The bonding film 3 having such a structure is formed on the substrate 2 by using a chemical vapor deposition method (CVD method), but the chemical vapor deposition method is not particularly limited. A metal organic chemical vapor deposition method (hereinafter also abbreviated as “MOCVD method”), a thermal CVD method, a photo CVD method, an RF plasma CVD method, a plasma CVD method such as an ECR plasma CVD method, and Laser CVD methods and the like can be mentioned. Among these, it is particularly preferable to use the MOCVD method using an organometallic material as a raw material. If the MOCVD method is used, it is composed of copper and organic components as described above, and the content of copper contained in the film is 90 at. % And 99 at. The bonding film 3 of less than% can be reliably formed on the substrate 2 by a relatively simple operation of appropriately setting the conditions for forming the film.

Hereinafter, a case where the bonding film 3 made of copper is formed on the substrate 2 by using an MOCVD method using an organic metal material as a raw material will be described as an example.
First, prior to the description of the method of forming the bonding film 3 using the MOCVD method, the film forming apparatus 200 used when forming the bonding film 3 will be described.
A film forming apparatus 200 shown in FIG. 3 is configured so that the bonding film 3 can be formed in the chamber 211 by a metal organic chemical vapor deposition method.

  Specifically, the film forming apparatus 200 includes a chamber (vacuum chamber) 211 and a substrate holder (film forming object holding unit) 212 that is installed in the chamber 211 and holds the substrate 2 (film forming object). , An organometallic material supply means 260 for supplying a vaporized or atomized organometallic material into the chamber 211, a gas supply means 270 for supplying a gas for making the inside of the chamber 211 under a low reducing atmosphere, and a chamber 211 An exhaust unit 230 for controlling the pressure by exhausting the inside, and a heating unit (not shown) for heating the substrate holder 212 are provided.

The substrate holder 212 is attached to the bottom of the chamber 211 in this embodiment. The substrate holder 212 can be rotated by the operation of a motor. Thereby, the bonding film can be formed on the substrate 2 with a uniform and uniform thickness.
Further, in the vicinity of the substrate holder 212, a shutter 221 that can cover them is provided. The shutter 221 is for preventing the substrate 2 and the bonding film 3 from being exposed to an unnecessary atmosphere or the like.

The organometallic material supply unit 260 is connected to the chamber 211. The organometallic material supply means 260 includes a storage tank 262 that stores a solid organometallic material, a gas cylinder 265 that stores a carrier gas that feeds the vaporized or atomized organometallic material into the chamber 211, and a carrier gas. And a gas supply line 261 for introducing the vaporized or atomized organometallic material into the chamber 211, and a pump 264 and a valve 263 provided in the middle of the gas supply line 261. In the organometallic material supply means 260 having such a configuration, the storage tank 262 has a heating means, and the operation of the heating means can heat and vaporize the solid organometallic material. Therefore, when the pump 264 is operated with the valve 263 opened and the carrier gas is supplied from the gas cylinder 265 to the storage tank 262, the organometallic material vaporized or atomized together with the carrier gas passes through the supply line 261. Then, it is supplied into the chamber 211.
In addition, it does not specifically limit as carrier gas, For example, nitrogen gas, argon gas, helium gas, etc. are used suitably.

In this embodiment, the gas supply unit 270 is connected to the chamber 211. The gas supply means 270 includes a gas cylinder 275 for storing a gas for making the inside of the chamber 211 under a low reducing atmosphere, a gas supply line 271 for guiding the gas for making the low reducing atmosphere into the chamber 211, A pump 274 and a valve 273 are provided in the middle of the gas supply line 271. In the gas supply unit 270 having such a configuration, when the pump 274 is operated with the valve 273 opened, the gas for making the low reducing atmosphere is supplied from the gas cylinder 275 through the supply line 271 to the chamber 211. It is designed to be supplied inside. With such a configuration of the gas supply unit 270, the inside of the chamber 211 can be surely set in a low reduction atmosphere with respect to the organometallic material. As a result, when forming the bonding film 3 using the MOCVD method using the organic metal material as a raw material, the bonding film 3 is formed in a state where at least a part of the organic component contained in the organic metal material remains. .
The gas for bringing the inside of the chamber 211 into a low reducing atmosphere is not particularly limited, and examples thereof include nitrogen gas and rare gases such as helium, argon, and xenon. A combination of more than one species can be used.

In addition, as an organometallic material, 2,4-pentadionate-copper (II) or [Cu (hfac) (VTMS)] described later, bis (2,6-dimethyl-2- (trimethylsilyloxy) -3, When using an oxygen atom in the molecular structure, such as 5-heptadionato) copper (II) (Cu (sopd) ₂ ), hydrogen gas is used as the gas for the low reducing atmosphere. It is preferable to add. Thereby, the reducibility with respect to oxygen atoms can be improved, and the bonding film 3 can be formed without excessive oxygen atoms remaining in the bonding film 3. As a result, the bonding film 3 has a low abundance of metal oxide in the film and exhibits excellent conductivity.
In addition, when at least one of the nitrogen gas, argon gas and helium gas described above is used as the carrier gas, the carrier gas can also exhibit a function as a gas for providing a low reducing atmosphere. it can.
The exhaust means 230 includes a pump 232, an exhaust line 231 that communicates the pump 232 and the chamber 211, and a valve 233 provided in the middle of the exhaust line 231. The pressure can be reduced.

The bonding film 3 is formed on the substrate 2 by the MOCVD method using the film forming apparatus 200 configured as described above.
[1-1] First, the substrate 2 is prepared. Then, the substrate 2 is carried into the chamber 211 of the film forming apparatus 200 and mounted (set) on the substrate holder 212.
The substrate 21 and the substrate 22 are mounted on the substrate holder 212 at the same time, and the bonding films 31 and 32 are formed on the first substrate 21 and the second substrate 22 at the same time. Alternatively, the bonding films 31 and 32 may be separately formed on the substrate holder 212 and separately formed on the first substrate 21 and the second substrate 22, respectively.

[1-2] Next, the exhaust means 230 is operated, that is, the valve 233 is opened while the pump 232 is operated, so that the chamber 211 is decompressed. The degree of vacuum (degree of vacuum) is not particularly limited, but is preferably about 1 × 10 ^{−3 to} 5 × 10 ² Torr, more preferably when forming the bonding film 3 in the next step [1-3]. Is set to be about 1 to 1 × 10 ² Torr.

  Further, the gas supply means 270 is operated, that is, the valve 273 is opened while the pump 274 is operated, so that a gas for making a low reducing atmosphere is supplied into the chamber 211, Under a low reducing atmosphere. Here, when hydrogen gas is added to the gas for making the low reducing atmosphere, the hydrogen gas is added so that the hydrogen gas partial pressure is about 40 to 60% of the pressure in the chamber 211. It is preferable to do this.

  Further, at this time, the heating means is operated to heat the substrate holder 212. The temperature of the substrate holder 212 is slightly different depending on the type of raw material used when forming the bonding film (pure copper film) 3, but is preferably about 80 to 300 ° C., more preferably about 100 to 275 ° C. preferable. By setting within this range, an organometallic material described later is used to form copper and an organic component, and the content of copper contained in the film is 90 at. % And 99 at. It is possible to reliably form the bonding film 3 of less than%.

[1-3] Next, the shutter 221 is opened.
Then, by operating the heating means provided in the storage tank 262 in which the solid organic metal material is stored, the pump 264 is operated while the organic metal material is vaporized, and the valve 263 is opened to vaporize. Alternatively, the atomized organometallic material is introduced into the chamber 211 together with the carrier gas.

  As described above, when the vaporized or atomized organometallic material is supplied into the chamber 211 in a state where the substrate holder 212 is heated in the step [1-2], the organometallic material is heated on the substrate 2. As a result, the organic metal material is reduced in a state where a part of the organic substance remains, and is composed of copper and an organic component, and the content ratio of copper contained in the film is 90 at. % And 99 at. The bonding film 3 that is less than% can be formed on the substrate 2.

Examples of the organic metal material used for forming the bonding film 3 made of copper by the MOCVD method include 2,4-pentadionate-copper (II), bis (2,6- Dimethyl-2- (trimethylsilyloxy) -3,5-heptadionato) copper (II) (Cu (sopd) ₂ ; C ₂₄ H ₄₆ CuO ₆ Si ₂ ), Cu (hexafluoroacetylacetonate) (vinyltrimethylsilane) [Cu (hfac) (VTMS)], Cu (hexafluoroacetylacetonate) (2-methyl-1-hexen-3-ene) [Cu (hfac) (MHY)], Cu (perfluoroacetylacetonate) ( Vinyltrimethylsilane) [Cu (pfac) (VTMS)], Cu (perfluoroacetylacetonate) (2-methyl-1-hex Down-3-ene) metal complexes, such as [Cu (pfac) (MHY)] and the like. If the metal complex as described above is used as the organometallic material, a part of the organic substance contained in the organometallic material is compared in a desired amount by appropriately setting the conditions for forming the bonding film 3. It can be easily left. That is, the content ratio of copper contained in the film is 90 at. % And 99 at. It can be set relatively easily within the range of less than%.

  In addition, when the bonding film 3 made of copper is formed using such an organometallic material, as described above, a part of the organic matter contained in the organometallic material remains as an organic component present in the film. It becomes. By adopting such a structure in which a part of the organic substance remains, an active site can be surely present in the copper atom as described in the mechanism of bonding of the bonding films 31 and 32 described later. Inferred. As a result, the bonding films 31 and 32 can be reliably bonded to each other under the conditions described in the post-process [2].

The supply amount of the vaporized or atomized organometallic material is preferably about 0.1 to 10 g / min, and more preferably about 0.5 to 2 g / min. Accordingly, the bonding film 3 can be reliably formed with a uniform film thickness and with a part of the organic substance contained in the organometallic material remaining.
As described above, it is composed of copper and an organic component, and the content ratio of copper contained in the film is 90 at. % And 99 at. The bonding film 3 that is less than% can be formed on the substrate 2.

In addition, the average thickness of the bonding films 31 and 32 to be formed is preferably about 1 to 500 nm, and more preferably about 20 to 400 nm. By setting the average thickness of the bonding film 3 within the above range, the dimensional accuracy of the bonded body 5 in which the first substrate 21 and the second substrate 22 are bonded together via the bonding film 3 is significantly reduced. These can be joined more firmly while preventing.
That is, when the average thickness of the bonding film 3 is less than the lower limit, sufficient bonding strength may not be obtained. On the other hand, when the average thickness of the bonding film 3 exceeds the upper limit, the dimensional accuracy of the bonded body 5 may be significantly reduced.

Furthermore, if the average thickness of the bonding film 3 is within the above range, a certain degree of shape followability is ensured for the bonding film 3. For this reason, for example, even when unevenness exists on the bonding surface (surface adjacent to the bonding film 3) of the first substrate 21 and the second substrate 22, the unevenness depends on the height of the unevenness. The bonding film 3 can be deposited so as to follow the shape. As a result, the bonding film 3 can absorb the unevenness and reduce the height of the unevenness generated on the surface. When the bonding films 31 and 32 formed on the first substrate 21 and the second substrate 22 are brought into contact with each other, the adhesion between the bonding films 31 and 32 can be improved. .
Note that the degree of the shape followability as described above becomes more significant as the thickness of the bonding film 3 increases. Therefore, in order to sufficiently ensure the shape followability, the thickness of the bonding film 3 should be as large as possible within the above range.

  Further, the surface roughness Ra (defined in JIS B 0601) of the bonding films 31 and 32 is not particularly limited, but is preferably about 1 to 30 nm, and more preferably about 5 to 15 nm. Thereby, in the next step [2], when the surfaces of the bonding films 31 and 32 approach each other by applying a compressive force, it is possible to increase the contact area with which the surfaces contact each other. It is possible to increase the number of bonds of the active sites that are present in each other.

In addition, in at least a region where the bonding film 3 is to be formed on the substrate 2, a surface that improves the adhesion between the substrate 2 and the bonding film 3 in advance before forming the bonding film 3 according to the constituent material of the substrate 2. It is preferable to apply the treatment.
Examples of the surface treatment include physical surface treatment such as sputtering treatment and blast treatment, plasma treatment using oxygen plasma, nitrogen plasma, etc., corona discharge treatment, etching treatment, electron beam irradiation treatment, ultraviolet irradiation treatment, ozone Examples include chemical surface treatment such as exposure treatment, or a combination of these. By performing such treatment, the region where the bonding film 3 of the substrate 2 is to be formed can be cleaned and the region can be activated. Thereby, the bonding strength between the bonding film 3 and the substrate 2 can be increased.

Further, by using plasma treatment among these surface treatments, the surface of the substrate 2 can be particularly optimized in order to form the bonding film 3.
In addition, when the board | substrate 2 which performs surface treatment is comprised with the resin material (polymer material), especially a corona discharge process, a nitrogen plasma process, etc. are used suitably.
Further, depending on the constituent material of the substrate 2, the bonding strength with the bonding film 3 is sufficiently high without performing the above-described surface treatment. Examples of the constituent material of the substrate 2 that can obtain such an effect include those mainly composed of various metal-based materials, various silicon-based materials, various glass-based materials and the like as described above.

The surface of the substrate 2 made of such a material is covered with an oxide film, and a relatively active hydroxyl group is bonded to the surface of the oxide film. Therefore, when the substrate 2 made of such a material is used, the bonding film 3 that is firmly bonded onto the substrate 2 can be formed without performing the surface treatment as described above.
In this case, the entire substrate 2 may not be made of the above material, and at least the vicinity of the surface of the region where the bonding film 3 is to be formed needs to be made of the above material.

Further, instead of the surface treatment, an intermediate layer may be formed in advance in at least the region where the bonding film 3 is to be formed.
The intermediate layer may have any function and is not particularly limited. For example, the intermediate layer has a function of improving adhesion to the bonding film 3, cushioning (buffer function), and stress concentration. Those having a function, a function of promoting film growth of the bonding film 3 (seed layer), a function of protecting the bonding film 3 (barrier layer), and the like are preferable. The substrate 2 and the bonding film 3 are bonded through such an intermediate layer, and as a result, a highly reliable bonded body can be obtained.

Examples of the constituent material of the intermediate layer include metal materials such as aluminum, titanium, tungsten, copper and alloys thereof, metal oxides, metal nitrides, oxide materials such as silicon oxides, metal nitrides, Nitride-based materials such as silicon nitride, carbon-based materials such as graphite and diamond-like carbon, silane coupling agents, thiol-based compounds, metal alkoxides, self-assembled film materials such as metal-halogen compounds, and resin-based materials Examples thereof include resin materials such as adhesives, resin films, resin coating materials, various rubber materials, and various elastomers, and one or more of these can be used in combination.
Further, among the intermediate layers formed of these various materials, the bonding strength between the substrate 2 and the bonding film 3 can be particularly increased by the intermediate layer formed of the oxide-based material.

  [2] Next, the bonding films 31 and 32 provided on the first substrate 21 and the second substrate 22 face each other (see FIG. 1B), and the first substrate 21 and the second substrate The two substrates 22 are brought into contact with each other (see FIG. 1C). In this state, a compressive force is applied to the first substrate 21 and the second substrate 22 (see FIG. 2D). As a result, the bonding films 31 and 32 are bonded (integrated), and the bonded body in which the first substrate 21 and the second substrate 22 are bonded to each other through the bonded bonding film 3. 5 (the joined body of the present invention) can be obtained (see FIG. 2 (e)).

  The bonded body 5 thus obtained is not bonded mainly based on a physical bond such as an anchor effect, as in the adhesive used in the conventional bonding method, but is a strong chemical produced in a short time. The first substrate 21 and the second substrate 22 are bonded to each other based on the mechanical coupling. For this reason, the bonded body 5 can be formed in a short time, is extremely difficult to peel off, and is difficult to cause uneven bonding.

  In the present invention, the substrate 21 and the substrate 22 are not joined in the state where the first substrate 21 and the second substrate 22 are in contact with each other, that is, in the state of FIG. The relative position with respect to the substrate 22 can be adjusted. Thereby, after superimposing the board | substrate 21 and the board | substrate 22, these positions can be easily fine-tuned. As a result, the accuracy of the position where the first substrate 21 and the second substrate 22 are joined can be further increased.

  Further, if the bonded body 5 is obtained using such a bonded body forming method, the bonded film 3 is 1 at. % Greater than 10%. % Of an organic component within the range of 1% or less. It is necessary to set the temperature at which the bonding film 3 is heated slightly higher than when it is mainly composed of copper as in the case where the organic component is contained, but the heating temperature is set to 200 ° C. or lower. Since the heat treatment at a high temperature (for example, 700 ° C. or higher) is not required unlike the conventional solid bonding, the first substrate 21 and the second substrate made of a material having low heat resistance can be used. 22 can also be used for bonding.

Furthermore, in the present invention, since the first substrate 21 and the second substrate 22 are bonded to each other through the bonding film 3, the constituent materials of the first substrate 21 and the second substrate 22 are not limited. There is an advantage, and the range of selection of each constituent material of the first substrate 21 and the second substrate 22 can be expanded.
Further, since solid bonding does not involve a bonding film, when there is a large difference in the coefficient of thermal expansion between the first substrate 21 and the second substrate 22, stress based on the difference is concentrated on the bonding interface. Although it is easy and peeling or the like may occur, in the bonded body 5, stress concentration is relieved by the bonded bonding film 3, so that occurrence of peeling can be suppressed or prevented accurately.

In addition, although the constituent material of the 1st board | substrate 21 and the 2nd board | substrate 22 may respectively be the same or different, each thermal expansion coefficient of the 1st board | substrate 21 and the 2nd board | substrate 22 is It is preferable to select one that is approximately equal. If the thermal expansion coefficients of the first substrate 21 and the second substrate 22 are substantially equal, the bonding film 3 is heated when the first substrate 21 and the second substrate 22 are bonded to each other through the bonding film 3. Stress associated with expansion is less likely to occur. As a result, it is possible to reliably prevent problems such as peeling in the finally obtained bonded body 5.
Further, even when the thermal expansion coefficients of the first substrate 21 and the second substrate 22 are different from each other, the conditions for applying a compressive force to the first substrate 21 and the second substrate 22 are as follows: It is preferable to optimize as described above. Thereby, the first substrate 21 and the second substrate 22 can be firmly bonded with high dimensional accuracy via the bonding film 3.

That is, when the first substrate 21 and the second substrate 22 have different coefficients of thermal expansion, it is preferable to apply the compressive force at as low a temperature as possible. By applying the compressive force at a low temperature, the stress generated in the bonding film 3 can be further reduced.
Specifically, depending on the difference in thermal expansion coefficient between the first substrate 21 and the second substrate 22, the temperature of the first substrate 21 and the second substrate 22 is about 25 to 50 ° C. Below, it is preferable to bond the 1st board | substrate 21 and the 2nd board | substrate 22 together, and it is more preferable to bond together in the state which is about 25-40 degreeC. Within such a temperature range, even if the difference in thermal expansion coefficient between the first substrate 21 and the second substrate 22 is large to some extent, the thermal stress generated at the bonding interface can be sufficiently reduced. As a result, it is possible to reliably suppress or prevent the occurrence of warpage or peeling in the obtained bonded body 5.

In this case, when the specific difference in thermal expansion coefficient between the first substrate 21 and the second substrate 22 is 5 × 10 ⁻⁵ / K or more, as described above. It is particularly recommended to perform the joining at as low a temperature as possible.
Furthermore, it is preferable that the first substrate 21 and the second substrate 22 have different rigidity. Thereby, the 1st board | substrate 21 and 2nd board | substrates 22 can be joined more firmly.

  Moreover, it is preferable that at least one of the first substrate 21 and the second substrate 22 is made of a resin material. Due to its flexibility, the resin material has a stress (for example, due to thermal expansion) generated at the bonding interface when the first substrate 21 and the second substrate 22 are bonded to each other via the bonding film 3 bonded. Associated stress, etc.) can be relaxed. For this reason, it becomes difficult to destroy the bonding interface, and as a result, the bonded body 5 having high bonding strength can be obtained.

The bonded body 5 obtained in this way differs depending on the constituent materials of the first substrate 21 and the second substrate 22, but the bonding strength between the first substrate 21 and the second substrate 22 is 5 MPa ( 50 kgf / cm ² ) or more is preferable, and 10 MPa (100 kgf / cm ² ) or more is more preferable. The bonded body 5 having such bonding strength can sufficiently prevent the peeling. As will be described later, for example, when a droplet discharge head is configured using the joined body 5, a droplet discharge head having excellent durability can be obtained.

  Here, the magnitude of the compressive force applied between the first substrate 21 and the second substrate 22 is as low as possible with such a pressure that the bonded body 5 to be formed, that is, the substrate 2 and the bonding film 3 are not damaged. Larger is preferable. Thereby, when other conditions, such as the temperature which heats the joining film 3, are made constant, the joining strength in the joined body 5 can be raised corresponding to the magnitude | size of this compressive force.

  The magnitude of the compressive force is appropriately set according to the constituent materials and thicknesses of the first substrate 21 and the second substrate 22, the time for applying the compressive force, the temperature of the bonding film 3, and the like. Specifically, the pressure is preferably about 1 to 100 MPa, and more preferably about 5 to 50 MPa. By applying a compressive force within such a range, the bonding films 31 and 32 can be reliably bonded to each other. Although this compressive force may exceed the upper limit, depending on the material constituting the first substrate 21 and the second substrate 22, the first substrate 21 and the second substrate 22 may be damaged. May occur.

Further, the time for applying the compressive force is appropriately set according to the magnitude of the compressive force at the time of pressurization, the temperature of the bonding film 3 and the like. For example, as the compressive force applied to the first substrate 21 and the second substrate 22 is larger, the bonding films 31 and 32 can be bonded to each other even if the time for applying the compressive force is shortened. The time for applying the force is set short, but specifically, it is preferably set to about 5 to 180 minutes, more preferably about 10 to 80 minutes. By setting within this range, the bonding films 31 and 32 can be reliably bonded.
Furthermore, it is preferable to heat the bonding films 31 and 32 when applying the compressive force. As a result, heating energy is applied to both the bonding films 31 and 32, and the bonding films 31 and 32 are bonded more smoothly by applying a compressive force to the bonding films 31 and 32.

  The temperature for heating the bonding films 31 and 32 is not particularly limited as long as it is higher than room temperature and lower than the heat resistance temperature of the substrate 2, but is preferably about 90 to 200 ° C., more preferably about 150 to 180 ° C. The By heating at such a temperature, the bonding films 31 and 32 can be bonded more smoothly while reliably preventing the substrate 2 from being altered or deteriorated by heat, and the bonding strength is reliably increased. Can do. That is, the bonding between the bonding films 31 and 32 at a low temperature can be further promoted, and the bonding strength can be reliably increased.

  As described above, in order to reliably obtain the bonded body 5 in which the first substrate 21 and the second substrate 22 are bonded via the bonding film 3 in which the bonding films 31 and 32 are bonded together, It is necessary to appropriately set the magnitude of the compressive force applied to the substrate 21 and the second substrate 22, the time for applying the compressive force, and the temperature for heating the bonding films 31 and 32. In addition, the relationship between the magnitude of the compressive force applied to the first substrate 21 and the second substrate 22, the time during which the compressive force is applied, and the temperature at which the bonding films 31 and 32 are heated is included in the bonding film 3. Since the content varies depending on the content of the organic component, that is, the content of copper, the content of copper needs to be set as appropriate.

In view of this point, the present inventor has paid attention to the results, and as a result of repeated studies, the compression force applied to the first substrate 21 and the second substrate 22 is set to 50 [MPa], and the compression force is applied. The time for heating is Y [min], the temperature for heating the bonding films 31 and 32 is T [K], and the content of copper in the bonding film 3 is X [at. %] And the gas constant is R [J / (mol · K)], and it has been found that T, X and Y may be set so as to satisfy the relationship of the following formula 1.
1 / Y ≧ 1.43 × 10 ⁹ exp [−6.60 × 10 ⁻² (100−X) −82 × 10 ³ / RT].
By satisfying this relationship, the bonding films 31 and 32 can be bonded more smoothly, and the first substrate 21 and the second substrate 22 are bonded together by the bonded bonding film 3. The joined body 5 can be obtained more reliably.

Here, the bonding films 31 and 32 can be bonded to each other by setting so as to satisfy the relationship expressed by the above-described formula 1 based on the following examination results of the present inventors.
That is, the copper content in the bonding film 3 is 99 at. % Until the bonding films 31 and 32 are bonded together when the compressive force applied to the first substrate 21 and the second substrate 22 is set to 50 [MPa]. The relationship between the time for applying the compressive force and the temperature for heating the bonding films 31 and 32 was examined. As a result, the bonding films 31 and 32 are connected to each other by setting the time for applying the compressive force and the temperature for heating the bonding films 31 and 32 so as to be positioned on the bonding virtual curve A as shown in FIG. It turns out that it can be put on. That is, the bonding films 31 and 32 are bonded to each other when the time for applying the compressive force and the temperature for heating the bonding films 31 and 32 are at the positions indicated by the marks in FIG. Therefore, the content ratio of copper in the bonding film 3 that is divided into a bonding region and a non-bonding region with the bonding virtual curve A as a boundary is 99 at. It has been found that it is the bondable boundary line A when it is%.

  The copper content in the bonding film 3 is 90 at. %, When the magnitude of the compressive force applied to the first substrate 21 and the second substrate 22 is set to 50 [MPa], the bonding films 31 and 32 are bonded together in the same manner as described above. The relationship between the time during which the compressive force was applied until it was applied and the temperature at which the bonding films 31 and 32 were heated was examined. As a result, since the bonding films 31 and 32 are bonded to each other when the position becomes a circle mark (possible to bind) in FIG. 4, a bonding virtual curve B as shown in FIG. The copper content in the bonding film 3 is divided into 90 at. It has been found that this is the bondable boundary line B when it is%.

  From the above, the region where the diagonal line rising to the right in FIG. 4 is drawn indicates that the copper content in the bonding film 3 is 99 at. If the time for applying the compressive force and the temperature for heating the bonding films 31 and 32 are set so as to be located in this area, the bonding films 31 and 32 are reliably bonded to each other. In FIG. 4, a region with a diagonal line rising to the left indicates that the copper content in the bonding film 3 is 90 at. If the time for applying the compressive force and the temperature for heating the bonding films 31 and 32 are set so as to be located in this area, the bonding films 31 and 32 are reliably bonded to each other. It turns out that you can.

Furthermore, as the content of copper in the bonding film 3 decreases, in other words, as the content of the organic component increases, as shown in FIG. When it was made the same, it turned out that it shifted to a high temperature side.
In such a study, whether or not the first substrate 21 and the second substrate 22 are bonded via the bonding film 3 is determined between the first substrate 21 and the second substrate 22. When no peeling occurred, it was determined to be joined.

Therefore, the present inventor conducted further studies and made the following hypothesis. That is, since the bonding virtual curves A and B in FIG. 4 each show temperature dependence, when the bonding films 31 and 32 are bonded to each other, some chemical reaction occurs on the bonding surface to which these bonding films are bonded. It was further assumed that this chemical reaction was of the Arrhenius type.
Here, the Arrhenius equation is expressed by the following equation 2 when the rate constant is k, the activation energy is Ea, the gas constant is R, and the frequency factor is A. When curves A and B were respectively curve-fitted, it was found that the activation energies Ea of the joint virtual curves A and B can both approximate 82 × 10 ³ (J / mol).
k = A · exp (−Ea / RT) ...... Formula 2

As described above, as the content of the organic component (impurities) increases, when the time for applying the compressive force is made the same, the bondable boundary line shifts to the high temperature side, so the frequency factor A is organic. Assuming that there is a correlation with the component content (copper content), the relational expression between the frequency factor A and the copper content X (at.%) In the bonding film 3 is expressed by the following formula 3. I was able to.
A = 1.43 × 10 ⁹ exp [−6.60 × 10 ⁻² (100−X)] ...... Equation 3

Since the activation energy Ea and the frequency factor A are obtained as described above, the joint virtual curves A and B in FIG. 4 are expressed by one equation including the copper content as a parameter as shown in the following equation 4. The inventor has found that they can be expressed.
1 / Y ≧ 1.43 × 10 ⁹ exp [−6.60 × 10 ⁻² (100−X) −82 × 10 ³ / RT].
Therefore, if the relationship of the above formula 1 is satisfied, the copper content C [at. %] Is 90 at. % Or more, 99 at. Even if it changes between less than%, the time Y [min] for applying the compressive force and the temperature T [K] for heating the bonding films 31 and 32 can be set to be located in the bonding region. 31 and 32 can be bound reliably.

  As shown in FIG. 4, for example, the heating temperature is 150 ° C. (423 K), the time B for applying the compressive force is 20 minutes, and the copper content C [at. %] At 90 at. %, Since the bonding films 31 and 32 are bonded to each other and the first substrate 21 and the second substrate 22 are bonded to each other via the bonding film 3, The bonding strength is increased by increasing at least one of the temperature A and the time B as indicated by arrows in the figure.

Further, in this step, it is assumed that the bonding films 31 and 32 are bonded due to the following mechanism.
When compressive force is applied to the bonding films 31 and 32, the surfaces of the bonding films 31 and 32 first approach each other.
Here, in the present invention, as described above, the bonding films 31 and 32 are films composed of copper and an organic component, which are formed using the chemical vapor deposition method. Due to the presence of the organic component, it is presumed that active sites such as dangling bonds (unbonded hands) are present randomly (irregularly) on the copper atoms.

Therefore, when the surfaces of the bonding films 31 and 32 are closer to each other, dangling bonds existing near the surfaces of the bonding films 31 and 32 are bonded to each other.
This bond is complicated so that the dangling bonds included in each of the bonding films 31 and 32 are entangled with each other. Therefore, a network-like bond is formed at the bonding interface, so that the copper atoms constituting the bonding films 31 and 32 It is assumed that the bonding films 31 and 32 are bonded to each other.

  The reason why the bondable boundary line shifts to the high temperature side as the content of the organic component in the film increases is considered to be as follows. In other words, the presence of organic components in the film will cause dangling bonds in the film, but as the organic component content in the film increases, the organic components will bond to the dangling bonds. It becomes. Therefore, in order to bond the dangling bonds so as to be entangled with each other, it is necessary to first bond these dangling bonds after desorbing the organic component from the film. It is thought that it shifted to the side.

In the present invention, the copper content in the bonding film 3 is set to 90 at. % Or more, 99 at. %, In other words, the organic component content is 1 at. % Greater than 10%. The reason why it is within the range of% or less is as follows.
In other words, the bonding film 3 contains copper and an organic component. When this organic component increases, in the method of peeling the bonded body, which will be described later, when the substrate 21 and 22 are separated for recycling. Even if the peeling energy applied to the bonding film 3 is reduced, cleavage can be caused in the bonding film 3, and the recycling rate of the bonded body 5 can be improved.

  However, when the ratio of the organic component in the bonding film 3 increases, as shown in FIG. 4, the temperature T and time when the bonding films 31 and 32 are bonded to each other and the substrates 21 and 22 are bonded to each other. Y Furthermore, it is necessary to increase the compressive force applied between the substrates 21 and 22, and depending on the constituent materials of the substrates 21 and 22, the deterioration / degradation of the substrate 21 or the increase in manufacturing cost when obtaining the joined body 5 may be caused. There is a risk of inviting.

  Thus, it is possible to surely obtain the merit obtained by including the organic component in the bonding film 3 while accurately preventing or suppressing the demerit caused by including many organic components in the bonding film 3. For the purpose, the organic component content is set to 1 at. % Greater than 10%. %, In other words, the copper content is 90 at. % Or more, 99 at. It was set to be within the range of less than%.

  Note that the compressive force may be applied to the first substrate 21 and the second substrate 22 in any atmosphere, and specifically, air, an oxidizing gas atmosphere such as oxygen, or hydrogen. Examples thereof include a reducing gas atmosphere, an inert gas atmosphere such as nitrogen and argon, or a reduced pressure (vacuum) atmosphere obtained by reducing the pressure of these atmospheres. Thereby, it is not necessary to spend time and cost to control the atmosphere, and the compression force can be applied more easily.

  In order to improve the recycling rate of the joined body, the joined body obtained by using the method for forming the joined body of the present invention is required to be recycled after use from the viewpoint of environmental problems. In addition, it is preferable that each substrate is separated and used for recycling. In such a situation, according to the present invention, separation can be performed for each base material using a method for peeling a bonded body that imparts peeling energy to the bonding film of the bonded body.

  That is, when peeling energy is applied to the bonding film 3 included in the bonded body 5, a part of molecular bonds in the bonding film 3 composed of copper and an organic component is cut, and as a result, the bonding film Cleaving occurs in the first substrate 21, whereby the second substrate 22 can be peeled from the first substrate 21, and the first substrate 21 and the second substrate 22 can be separated and used for recycling.

Here, the following may be considered as a mechanism in which cleavage is caused in the bonding film 3 by applying the energy for peeling. Here, when peeling energy is applied to the bonding film 3, the bonding film 3 is composed of copper and an organic substance. For example, Cu—CH ₃ bonds existing in the film are cut, and water molecules in the atmosphere By reacting, for example, methane is generated. Since this methane exists as a gas (methane gas) and occupies a large volume, the bonding film 3 is pushed up at the portion where the gas is generated. As a result, it is presumed that the Cu—Cu bond is also cut and finally cleavage occurs in the bonding film 3.
The atmosphere for applying the peeling energy is not particularly limited as long as water atmosphere is contained in the atmosphere, but is preferably an air atmosphere. If it is an air atmosphere, a device is not particularly required, and a sufficient amount of water molecules is contained in the atmosphere, so that cleavage can be reliably generated in the bonding film 3.

  Further, the peeling energy applied to the bonding film 3 may be applied by any method, such as a method of irradiating the bonding film 3 with an energy beam, a method of heating the bonding film 3, or the bonding film 3. And a method of applying a compressive force (physical energy), a method of exposing the bonding film 3 to plasma (applying plasma energy), a method of exposing the bonding film 3 to ozone gas (applying chemical energy), and the like. In particular, when at least one of the first substrate 21 and the second substrate 22 is energy ray transmissive, a method of irradiating the bonding film 3 with energy rays, particularly as a method of applying the peeling energy to the bonding film 3. Is preferably used. Such a method can apply the energy for peeling to the bonding film 3 relatively easily and selectively, so that the bonding film 3 can surely cause cleavage. In addition, when both the first substrate 21 and the second substrate 22 do not have energy ray transparency, a method of heating the bonding film 3 is suitably used as a method for imparting peeling energy to the bonding film 3. .

The energy beam is not particularly limited, but light such as ultraviolet light and laser light is particularly preferable. Thereby, cleavage can be reliably generated in the bonding film 3 while preventing the first substrate 21 and the second substrate 22 from being altered or deteriorated.
The wavelength of the ultraviolet light is preferably about 126 to 300 nm, more preferably about 126 to 200 nm.

In the case of using the UV lamp, the output may vary depending on the area of the bonding film 3 is preferably from ^1mW / cm ^{2 ~1W} / cm 2 or ^so, at 5mW / cm ² ~50mW / cm 2 of about More preferably. In this case, the distance between the UV lamp and the bonding film 3 is preferably about 3 to 3000 mm, more preferably about 10 to 1000 mm.
Further, the time for irradiating the ultraviolet rays is set to such a time that cleavage occurs in the bonding film 3. Specifically, it is preferably about 10 to 180 minutes, more preferably about 30 to 60 minutes, although it varies slightly depending on the amount of ultraviolet light, the constituent material of the bonding film 3 and the like.

When heating the bonding film 3, the temperature when heating the bonded body 5 is preferably about 100 to 400 ° C., more preferably about 150 to 300 ° C. By heating at a temperature in such a range, the bonding film 3 can be reliably cleaved while accurately suppressing or preventing the first base material and the second base material from being altered or deteriorated by heat. .
Further, the heating time is set to such a time that cleavage occurs in the bonding film 3. Specifically, it is preferably about 10 to 180 minutes, more preferably about 30 to 60 minutes, although it varies slightly depending on the heating temperature, the constituent material of the bonding film 3 and the like.

  As described above, the second substrate 22 can be efficiently peeled from the first substrate 21 by an easy method of applying peeling energy to the bonding film 3. Therefore, even if it is a case where board | substrates 21 and 22 are comprised with a different material, since it can classify | categorize for every board | substrate 21 and 22 and can use for reuse, improving the recycling rate of the conjugate | zygote 5 reliably. Can do.

Furthermore, the method for forming a joined body of the present invention described above can be used to join various substrates (members).
Examples of members to be joined by such a method of forming a joined body include semiconductor elements such as transistors, diodes, and memories, piezoelectric elements such as crystal oscillators, reflectors, optical lenses, diffraction gratings, and optical filters. Such as optical elements, photoelectric conversion elements such as solar cells, semiconductor substrates and semiconductor elements mounted thereon, insulating substrates and wiring or electrodes, inkjet recording heads, microreactors, micromirrors such as micromirrors (Micro Electro Mechanical Systems) ) Sensor parts such as parts, pressure sensors, acceleration sensors, package parts for semiconductor elements and electronic parts, magnetic recording media, magneto-optical recording media, recording media such as optical recording media, liquid crystal display elements, organic EL elements, electricity Examples thereof include display element parts such as electrophoretic display elements and fuel cell parts.

<Droplet ejection head>
Here, an embodiment will be described in which a joined body formed by the joined body forming method of the present invention is applied to an ink jet recording head.
FIG. 5 is an exploded perspective view showing an ink jet recording head (droplet discharge head) obtained by applying the joined body of the present invention, and FIG. 6 shows the configuration of the main part of the ink jet recording head shown in FIG. FIG. 7 is a schematic view showing an embodiment of an ink jet printer including the ink jet recording head shown in FIG. In addition, FIG. 5 is shown upside down from the state normally used.

An ink jet recording head 10 shown in FIG. 5 is mounted on an ink jet printer 9 as shown in FIG.
The ink jet printer 9 shown in FIG. 7 includes an apparatus main body 92, a tray 921 for installing the recording paper P in the upper rear, a paper discharge port 922 for discharging the recording paper P in the lower front, and an operation panel on the upper surface. 97.

The operation panel 97 includes, for example, a liquid crystal display, an organic EL display, an LED lamp, and the like, and a display unit (not shown) for displaying an error message and the like, and an operation unit (not shown) configured with various switches and the like. And.
Further, inside the apparatus main body 92, mainly a printing apparatus (printing means) 94 provided with a reciprocating head unit 93 and a paper feeding apparatus (paper feeding means) for feeding recording paper P to the printing apparatus 94 one by one. 95 and a control unit (control means) 96 for controlling the printing device 94 and the paper feeding device 95.

Under the control of the control unit 96, the paper feeding device 95 intermittently feeds the recording paper P one by one. The recording paper P passes near the lower part of the head unit 93. At this time, the head unit 93 reciprocates in a direction substantially orthogonal to the feeding direction of the recording paper P, and printing on the recording paper P is performed. That is, the reciprocating motion of the head unit 93 and the intermittent feeding of the recording paper P become the main scanning and sub-scanning in printing, and ink jet printing is performed.
The printing apparatus 94 includes a head unit 93, a carriage motor 941 that is a drive source of the head unit 93, and a reciprocating mechanism 942 that reciprocates the head unit 93 in response to the rotation of the carriage motor 941.

The head unit 93 includes an ink jet recording head 10 (hereinafter simply referred to as “head 10”) having a large number of nozzle holes 111 at a lower portion thereof, an ink cartridge 931 that supplies ink to the head 10, the head 10 and And a carriage 932 on which the ink cartridge 931 is mounted.
Ink cartridge 931 is filled with four color inks of yellow, cyan, magenta, and black (black), thereby enabling full color printing.

The reciprocating mechanism 942 includes a carriage guide shaft 943 whose both ends are supported by a frame (not shown), and a timing belt 944 extending in parallel with the carriage guide shaft 943.
The carriage 932 is supported by the carriage guide shaft 943 so as to be able to reciprocate and is fixed to a part of the timing belt 944.
When the timing belt 944 travels forward and backward via a pulley by the operation of the carriage motor 941, the head unit 93 reciprocates as guided by the carriage guide shaft 943. During this reciprocation, ink is appropriately discharged from the head 10 and printing on the recording paper P is performed.

The sheet feeding device 95 includes a sheet feeding motor 951 serving as a driving source thereof, and a sheet feeding roller 952 that is rotated by the operation of the sheet feeding motor 951.
The paper feed roller 952 includes a driven roller 952a and a drive roller 952b that are vertically opposed to each other with a feeding path (recording paper P) of the recording paper P interposed therebetween. The drive roller 952b is connected to the paper feed motor 951. As a result, the paper feed roller 952 can feed a large number of recording sheets P set on the tray 921 one by one toward the printing apparatus 94. Instead of the tray 921, a configuration in which a paper feed cassette that stores the recording paper P can be detachably mounted may be employed.

The control unit 96 performs printing by controlling the printing device 94, the paper feeding device 95, and the like based on print data input from a host computer such as a personal computer or a digital camera.
Although not shown, the control unit 96 mainly includes a memory that stores a control program for controlling each unit, a piezoelectric element driving circuit that drives the piezoelectric element (vibration source) 14 to control the ink ejection timing, A driving circuit for driving the printing device 94 (carriage motor 941), a driving circuit for driving the paper feeding device 95 (paper feeding motor 951), a communication circuit for obtaining print data from the host computer, and these electrically And a CPU that is connected and performs various controls in each unit.
Further, for example, various sensors that can detect the remaining ink amount of the ink cartridge 931, the position of the head unit 93, and the like are electrically connected to the CPU.

  The control unit 96 obtains print data via the communication circuit and stores it in the memory. The CPU processes the print data and outputs a drive signal to each drive circuit based on the process data and input data from various sensors. The piezoelectric element 14, the printing device 94, and the paper feeding device 95 are each activated by this drive signal. As a result, printing is performed on the recording paper P.

Hereinafter, the head 10 will be described in detail with reference to FIGS. 5 and 6.
The head 10 includes a head main body 17 including a nozzle plate 11, an ink chamber substrate 12, a vibration plate 13, and a piezoelectric element (vibration source) 14 bonded to the vibration plate 13, and a base body that houses the head main body 17. 16. The head 10 constitutes an on-demand piezo jet head.

The nozzle plate 11 is made of, for example, a silicon-based material such as SiO ₂ , SiN, or quartz glass, a metal-based material such as Al, Fe, Ni, Cu, or an alloy containing these, or an oxide-based material such as alumina or iron oxide. The material is composed of carbon-based materials such as carbon black and graphite.
A number of nozzle holes 111 for discharging ink droplets are formed in the nozzle plate 11. The pitch between these nozzle holes 111 is appropriately set according to the printing accuracy.

An ink chamber substrate 12 is fixed (fixed) to the nozzle plate 11.
The ink chamber substrate 12 includes a plurality of ink chambers (cavities, pressure chambers) 121 and a reservoir chamber that stores ink supplied from the ink cartridge 931 by the nozzle plate 11, side walls (partition walls) 122, and a vibration plate 13 described later. 123 and a supply port 124 for supplying ink from the reservoir chamber 123 to each ink chamber 121 are partitioned.

Each ink chamber 121 is formed in a strip shape (cuboid shape), and is disposed corresponding to each nozzle hole 111. Each ink chamber 121 has a variable volume due to vibration of a diaphragm 13 described later, and is configured to eject ink by this volume change.
As a base material for obtaining the ink chamber substrate 12, for example, a silicon single crystal substrate, various glass substrates, various resin substrates and the like can be used. Since these substrates are general-purpose substrates, the manufacturing cost of the head 10 can be reduced by using these substrates.

On the other hand, a vibration plate 13 is bonded to the ink chamber substrate 12 on the side opposite to the nozzle plate 11, and a plurality of piezoelectric elements 14 are provided on the vibration plate 13 on the side opposite to the ink chamber substrate 12.
A communication hole 131 is formed at a predetermined position of the diaphragm 13 so as to penetrate in the thickness direction of the diaphragm 13. Ink can be supplied from the ink cartridge 931 to the reservoir chamber 123 through the communication hole 131.

Each piezoelectric element 14 has a piezoelectric layer 143 interposed between the lower electrode 142 and the upper electrode 141, and is disposed corresponding to the substantially central portion of each ink chamber 121. Each piezoelectric element 14 is electrically connected to a piezoelectric element drive circuit and is configured to operate (vibrate, deform) based on a signal from the piezoelectric element drive circuit.
Each piezoelectric element 14 functions as a vibration source, and the diaphragm 13 vibrates due to vibration of the piezoelectric element 14 and functions to instantaneously increase the internal pressure of the ink chamber 121.
The base body 16 is made of, for example, various resin materials, various metal materials, and the like, and the nozzle plate 11 is fixed and supported on the base body 16. That is, the edge of the nozzle plate 11 is supported by the step 162 formed on the outer periphery of the recess 161 in a state where the head body 17 is housed in the recess 161 provided in the base body 16.

When the nozzle plate 11 and the ink chamber substrate 12 are bonded as described above, the ink chamber substrate 12 and the vibration plate 13 are bonded, and the nozzle plate 11 and the substrate 16 are bonded, at least one place of the present invention is used. A method of forming a joined body is applied.
In other words, the present invention is provided in at least one place among the joined body of the nozzle plate 11 and the ink chamber substrate 12, the joined body of the ink chamber substrate 12 and the vibration plate 13, and the joined body of the nozzle plate 11 and the substrate 16. The joined body is applied.

Such a head 10 has high bonding strength and chemical resistance at the bonding interface of the bonding portion, and thereby has high durability and liquid tightness with respect to the ink stored in each ink chamber 121. As a result, the head 10 becomes highly reliable.
In addition, since highly reliable bonding can be performed at a very low temperature, it is advantageous in that a large-area head can be formed even with materials having different linear expansion coefficients.

  Such a head 10 is in a state where a predetermined ejection signal is not input via the piezoelectric element driving circuit, that is, in a state where no voltage is applied between the lower electrode 142 and the upper electrode 141 of the piezoelectric element 14. The piezoelectric layer 143 is not deformed. For this reason, the vibration plate 13 is not deformed, and the volume of the ink chamber 121 is not changed. Therefore, no ink droplet is ejected from the nozzle hole 111.

  On the other hand, in a state where a predetermined ejection signal is input via the piezoelectric element driving circuit, that is, in a state where a constant voltage is applied between the lower electrode 142 and the upper electrode 141 of the piezoelectric element 14, the piezoelectric layer 143 is applied. Deformation occurs. As a result, the diaphragm 13 is greatly deflected, and the volume of the ink chamber 121 is changed. At this time, the pressure in the ink chamber 121 increases instantaneously, and ink droplets are ejected from the nozzle holes 111.

  When the ejection of one ink is completed, the piezoelectric element driving circuit stops applying the voltage between the lower electrode 142 and the upper electrode 141. As a result, the piezoelectric element 14 returns almost to its original shape, and the volume of the ink chamber 121 increases. At this time, a pressure (pressure in the positive direction) from the ink cartridge 931 toward the nozzle hole 111 acts on the ink. Therefore, air is prevented from entering the ink chamber 121 from the nozzle hole 111, and an amount of ink corresponding to the amount of ink discharged is supplied from the ink cartridge 931 (reservoir chamber 123) to the ink chamber 121.

In this manner, in the head 10, arbitrary (desired) characters and figures can be printed by sequentially inputting ejection signals to the piezoelectric elements 14 at the positions to be printed via the piezoelectric element driving circuit. it can.
The head 10 may have an electrothermal conversion element instead of the piezoelectric element 14. That is, the head 10 may have a configuration (so-called “bubble jet method” (“bubble jet” is a registered trademark)) that ejects ink using thermal expansion of a material by an electrothermal transducer.

  In the head 10 having such a configuration, the nozzle plate 11 is provided with a coating 114 formed for the purpose of imparting liquid repellency. Thus, when ink droplets are ejected from the nozzle holes 111, it is possible to reliably prevent ink droplets from remaining around the nozzle holes 111. As a result, the ink droplets ejected from the nozzle hole 111 can be reliably landed on the target area.

<Wiring board>
Furthermore, an embodiment when the joined body of the present invention is applied to a wiring board will be described.
FIG. 8 is a perspective view showing a wiring board obtained by applying the joined body of the present invention.
The wiring substrate 410 shown in FIG. 8 includes an insulating substrate 413, an electrode 412 disposed on the insulating substrate 413, a lead 414, and an electrode 415 provided at one end of the lead 414 so as to face the electrode 412. Have

  The bonding film 3 is formed on the upper surface of the electrode 412 and the lower surface of the electrode 415, respectively. The electrode 412 and the electrode 415 are bonded to each other via the bonding film 3 bonded together by the bonding method of the present invention described above. As a result, the electrodes 412 and 415 are firmly bonded to each other by the single-layer bonding film 3, and delamination between the electrodes 412 and 415 is surely prevented, and a highly reliable wiring board is provided. 410 is obtained.

Further, since the bonding film 3 is made of copper, it also serves as a wiring that conducts between the electrodes 412 and 415.
Further, as described above, the thickness of the bonding film 3 can be easily controlled with high accuracy. As a result, the wiring substrate 410 has higher dimensional accuracy, and the conductivity between the electrodes 412 and 415 can be easily controlled.

As mentioned above, although the formation method and joined body of the conjugate | zygote of this invention were demonstrated based on embodiment of illustration, this invention is not limited to these.
For example, the method for forming a joined body of the present invention may be any one or a combination of two or more of the above embodiments.
Moreover, in the formation method of the joined_body | zygote of this invention, you may add the process of 1 or more arbitrary objectives as needed.
Moreover, although the said embodiment demonstrated the case where two board | substrates are joined, when not only this but three or more board | substrates are joined, it is made to use the formation method of the conjugate | zygote of this invention. Also good.

Next, specific examples of the present invention will be described.
1. Manufacture of joined body (Example 1)
First, as a substrate, a single crystal silicon substrate having a length of 20 mm × width of 20 mm × an average thickness of 1 mm and a single crystal silicon substrate of length 20 mm × width 10 mm × average thickness 1 mm were prepared.
Next, a thermal oxidation treatment was performed on the surface of each substrate to form a 100 nm thermal oxide film, and a 20 nm titanium thin film was formed on the thermal oxide film by sputtering, and the surface treatment was performed.

Next, each substrate subjected to the surface treatment is accommodated in the chamber 211 of the film forming apparatus 200 shown in FIG. 3, and the raw material is bis (2,6-dimethyl-2- (trimethylsilyloxy) -3, 5-Heptadionato) copper (II) (Cu (sopd) ₂ ) was used, and a bonding film composed of copper and an organic component having an average thickness of 100 nm was formed by MOCVD. The film forming conditions are as shown below.

<Film formation conditions>
・ Atmosphere in chamber: Nitrogen gas + Hydrogen gas ・ Organic metal material (raw material): Cu (sopd) ₂
・ Flow rate of atomized organometallic material: 1 g / min
-Carrier gas: Nitrogen gas-Pressure in the chamber during film formation: 20 Torr
-Hydrogen partial pressure during film formation: 14 Torr
-Temperature of substrate holder: 270 ° C
Treatment time: 10 minutes The bonding film formed as described above is made of copper, and the purity of copper is measured by secondary ion mass spectrometry (SIMS method). %Met.
Through these steps, a bonding film composed of copper and an organic component was formed on each single crystal silicon substrate.

Next, the single crystal silicon substrates were overlapped so that the bonding films included in the single crystal silicon substrates were in contact with each other.
Next, in this state, while applying a compressive force of 50 MPa between these substrates, the bonding film is heated at 175 ° C., and the application of the compressive force is maintained for 5 minutes. By bonding each other, a bonded body in which the respective substrates were bonded via the bonded bonding film under the condition satisfying the above-described formula 1 was obtained.

(Examples 2 to 7)
A bonded body was obtained in the same manner as in Example 1 except that the time for maintaining the application of compressive force and the temperature for heating the bonding film were changed to the conditions shown in Table 1, respectively.
All of these conditions satisfied the above-mentioned formula 1.

(Example 8)
A bonded body was obtained in the same manner as in Example 1 except that the film forming conditions for forming a bonding film composed of copper and an organic component on each substrate were changed as shown below.
<Film formation conditions>
・ Atmosphere in chamber: Nitrogen gas + Hydrogen gas ・ Organic metal material (raw material): Cu (sopd) ₂
・ Flow rate of atomized organometallic material: 1 g / min
-Carrier gas: Nitrogen gas-Pressure in the chamber during film formation: 15 Torr
-Hydrogen partial pressure during film formation: 8 Torr
-Temperature of substrate holder: 270 ° C
Processing time: 10 minutes The bonding film formed as described above is made of copper, and the purity of copper is measured by secondary ion mass spectrometry (SIMS method). %Met.
(Examples 9 to 16)
A joined body was obtained in the same manner as in Example 8 except that the time for maintaining the application of compressive force and the temperature for heating the joining film were changed to the conditions shown in Table 1, respectively.
All of these conditions satisfied the above-mentioned formula 1.

(Comparative Examples 1-5)
A bonded body was obtained in the same manner as in Example 1 except that the time for maintaining the application of compressive force and the temperature for heating the bonding film were changed to the conditions shown in Table 1, respectively.
Note that none of these conditions satisfied the above formula 1.
(Comparative Examples 6-12)
A joined body was obtained in the same manner as in Example 8 except that the time for maintaining the application of compressive force and the temperature for heating the joining film were changed to the conditions shown in Table 1, respectively.
Note that none of these conditions satisfied the above formula 1.

2. 2. Evaluation of bonded body 2.1 Evaluation of presence or absence of peeling About the bonded body obtained in each Example and each comparative example, the presence or absence of peeling between bonding films was confirmed. And it evaluated as follows according to the presence or absence of peeling between bonding films.
<Evaluation criteria for presence or absence of peeling>
○: No peeling is observed between the bonding films ×: Peeling is observed between the bonding films

2.2 Evaluation of Resistivity About the joined body obtained in each Example and each Comparative Example, an electrode was provided at each end in the longitudinal direction, and the resistivity of the joined body was measured by measuring the resistivity between the electrodes. The resistivity was determined. The measured resistivity was evaluated according to the following criteria.
<Evaluation criteria for resistivity>
◎: Less than 1 × 10 ⁻⁵ Ω · cm ○: 1 × 10 ⁻⁵ Ω · cm or more, less than 1 × 10 ⁻³ Ω · cm Δ: 1 × 10 ⁻³ Ω · cm or more, 1 × 10 ⁻¹ Ω · Less than cm ×: 1 × 10 ⁻¹ Ω · cm or more Table 1 shows the evaluation results of 2.1 to 2.2.

As is clear from Table 1, in the joined bodies obtained in the respective comparative examples, peeling between the joining films was observed, but in contrast, in the joined bodies obtained in the respective examples. In either case, no separation was observed between the bonding films.
Moreover, in the joined body obtained in each Example, compared with the joined body obtained in each comparative example, the resistivity was low and the conductor characteristic which was excellent was shown.

  2 ... Substrate 21 ... First substrate 22 ... Second substrate 3, 31, 32 ... Bonding film 5 ... Bonded body 200 ... Deposition apparatus 211 ... Chamber 212 ... Substrate holder 221 ... Shutter 230 ... Exhaust means 231 ... Exhaust line 232 ... Pump 233 ... Valve 260 ... Organometallic material supply means 261 ... Gas supply line 262 ... Storage tank 263 ... Valve 264 ... Pump 265 ... Gas cylinder 270 ... Gas supply means 271 ... Gas supply line 273 ... Valve 274 ... Pump 275 ... Gas cylinder 10 ... Inkjet recording head 11 ... Nozzle plate 111 ... Nozzle hole 114 ... Coating 12 ... Ink chamber Substrate 121 …… Ink chamber 122 …… Side wall 123 …… Reservoir chamber 124 …… Supply port 3 ... Diaphragm 131 ... Communication hole 14 ... Piezoelectric element 141 ... Upper electrode 142 ... Lower electrode 143 ... Piezoelectric layer 16 ... Substrate 161 ... Concave portion 162 ... Step 17 ... Head body 9 ... ... Inkjet printer 92 ... Main body 921 ... Tray 922 ... Discharge port 93 ... Head unit 931 ... Ink cartridge 932 ... Carriage 94 ... Printer 941 ... Carriage motor 942 ... Reciprocating mechanism 943 ... Carriage guide shaft 944 ... Timing belt 95 ... Paper feed device 951 ... Paper feed motor 952 ... Paper feed roller 952a ... Driven roller 952b ... Drive roller 96 ... Control unit 97 ... Control panel P ... Recording paper 410 ... Wiring board 412 ... Electrode 413 ... Insulating board 414 ... lead 415 ...... electrode

Claims (19)

Each of the first base material and the second base material is composed of copper and an organic component using a chemical vapor deposition method, and the copper content is 90 at. % And 99 at. Forming a bonding film that is less than%,
A compression force is applied between the first base material and the second base material in a state where the first base material and the second base material are in contact with each other so that the bonding films face each other. And a step of obtaining a bonded body by bonding the bonding films to each other.   2. The method of forming a bonded body according to claim 1, wherein in the step of forming the bonding film, the bonding film is formed so that a surface roughness Ra (specified in JIS B 0601) is 1 to 30 nm.   The method for forming a joined body according to claim 1 or 2, wherein in the step of obtaining the joined body, a compressive force applied between the first base material and the second base material is 1 to 100 MPa.   The method for forming a joined body according to any one of claims 1 to 3, wherein in the step of obtaining the joined body, the time for applying the compressive force is 5 to 180 minutes.   The method for forming a joined body according to claim 1, wherein the joining film is heated in the step of obtaining the joined body.   The method for forming a bonded body according to claim 5, wherein a temperature for heating the bonding film is 90 to 200 ° C. 6. In the step of obtaining the bonded body, the magnitude of the compressive force applied between the first base material and the second base material is 50 [MPa], and the time for applying the compressive force is Y [min], The temperature for heating the bonding film is T [K], and the copper content is X [at. %] And the gas constant is R [J / (mol · K)], 1 / Y ≧ 1.43 × 10 ⁹ exp [−6.60 × 10 ⁻² (100−X) −82 × 10 ^The method of forming a joined body according to claim 5 or 6, wherein the setting is made so as to satisfy a relationship of ³ / RT].   The method for forming a joined body according to claim 1, wherein in the step of obtaining the joined body, the compression force is applied in an air atmosphere.   9. The method for forming a bonded body according to claim 1, wherein the bonding film is formed by a metal organic chemical vapor deposition method using an organic metal material as a raw material.   The method for forming a joined body according to claim 9, wherein the organometallic material is a metal complex.   The method for forming a joined body according to claim 9 or 10, wherein the organic component is a material in which part of an organic substance contained in the organometallic material remains.   The method for forming a joined body according to claim 1, wherein an average thickness of the joining film is 1-1000 nm.   The method of forming a joined body according to any one of claims 1 to 12, wherein each of the first base material and the second base material has a plate shape.   The part which forms the said joining film of the said 1st base material and the 2nd base material at least is a silicon | silicone material, a metal material, or a glass material as a main material, The structure in any one of Claim 1 thru | or 13 Method for forming joined body.   The surface provided with the said bonding film of the said 1st base material and the 2nd base material is surface-treated in any one of Claims 1 thru | or 14 which improves adhesiveness with the said bonding film previously. Method for forming the joined body.   The method of forming a joined body according to claim 15, wherein the surface treatment is a plasma treatment.   An intermediate layer is interposed between the first base material and the second base material, and the bonding films provided on the first base material and the second base material, respectively. Item 17. A method for forming a joined body according to any one of Items 1 to 16.   The said intermediate | middle layer is a formation method of the conjugate | zygote of Claim 17 comprised by making an oxide type material into the main material.   A joined body formed by the method for forming a joined body according to claim 1.

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