JP2010129643A - Semiconductor device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method, being a semiconductor device manufacturing method, for manufacturing each partition having a higher aspect ratio of a partition height with respect to a partition width by a simple process and photocuring all of the screen-printed photocuring resins. <P>SOLUTION: The manufacturing method is used for manufacturing a semiconductor device having a semiconductor substrate formed with an image sensor having a light-receiving part, a coated part that coats the image sensor, and each photocuring resin partition for bonding the image sensor and the coated part to each other. The manufacturing method includes: (1) a step of screen-printing a photocuring resin layer on the image sensor, excluding a region in which the light-receiving part is formed, or on a part or the whole of the coated part into a frame shape; (2) a step of curing the photocuring resin layer; (3) a step of further screen-printing the photocuring resin layer on the cured photocuring resin layer into a frame shape; subsequently, after repeating the steps (2), (3) in this order one or more times if required, and (4) a step in which the coated part is mounted and the photocuring resin is cured. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a semiconductor device having a semiconductor substrate on which an imaging element having a light receiving portion is formed, a covering portion that faces the light receiving portion and covers the imaging element, and a partition wall that joins the imaging element and the covering portion. About.

  In recent years, imaging devices using imaging elements such as CCD and CMOS image sensors, which are a kind of semiconductor devices, have been put into practical use in various fields. FIG. 6 is a sectional view showing an example of a conventional imaging apparatus. The imaging device 1 includes a semiconductor substrate 2 on which an imaging element 3 having a light receiving unit 5 is formed, a covering unit 50 that faces the light receiving unit 5 and covers the imaging element 3, and joins the imaging element 3 and the covering unit 50. And a partition wall 4.

  This partition wall 4 is a method in which an uncured film is processed into a partition wall shape (frame shape) and bonded to a semiconductor substrate, and then the film is cured, or an adhesive layer containing a photocurable resin and a thermosetting resin A step of forming an adhesive layer on the semiconductor substrate 2 or the covering portion 50; a step of selectively exposing the adhesive layer to cure a photocurable resin contained in the adhesive layer in a predetermined region; The step of removing (developing) the uncured region of the photo-curable resin and patterning the adhesive layer, and the semiconductor substrate 2 and the covering portion 50 are arranged to face each other through the patterned adhesive layer, It is manufactured by a method (hereinafter referred to as “method including exposure and development”) including a step of bonding the semiconductor substrate 2 and the covering portion 50 by curing the thermosetting resin contained in the adhesive layer by heating (patent) Reference 1: Claim 12 Irradiation).

  The partition wall 4 is required to have a high height for the purpose of achieving a higher pixel density and higher density of the imaging device and facilitating the management of foreign matter contamination in the imaging device. (Managing pixels and managing contamination) Moreover, it is necessary to narrow the width of the partition wall 4 (high density).

JP 2006-73546 A

  However, in the method in which the film processed into the shape of the partition wall is bonded to the semiconductor substrate, it is difficult to increase the thickness of the film layer to 50 μm or more, and thus the height of the partition wall cannot be increased. In addition, there is a problem that it takes time to handle the processed film.

  In addition, it is difficult to make the height of the partition wall higher than 50 μm even by the above-described method including exposure and development. Furthermore, there is a problem that a process for removing the uncured photocurable resin is required, and that waste liquid is generated and the environmental load is large, and the uncured photocurable resin is wasted.

  Furthermore, in the method including the exposure and development described above, the photoreactive portion of the photocurable resin is cured, and the semiconductor substrate 2 and the covering portion 50 are arranged to face each other through the patterned adhesive layer. In order to cure the thermosetting resin contained in the adhesive layer by heating while applying a pressure of ˜2 MPa, a semiconductor substrate or the like is damaged by pressure, a heating / pressurizing device is required, and an imaging element having low heat resistance is formed. There is a problem that the semiconductor substrate cannot be used.

  The object of the present invention is to produce a partition wall having a height of more than 100 μm in a simple process, and a screen-printed photocurable resin or a resin having both photocurability and thermosetting properties (hereinafter referred to as “photocuring”). A method of manufacturing a semiconductor device, in which a covering portion is fixed by photocuring of a resin.

  According to a first aspect of the present invention, there is provided a semiconductor substrate on which an image pickup device having a light receiving portion is formed, a covering portion facing the light receiving portion and covering the image pickup device, and a partition wall made of a photocurable resin that joins the image pickup device and the cover portion And (1) screen-printing a photocurable resin layer in a frame shape on a part or all of the imaging element or the covering portion excluding the region where the light receiving portion is formed. A step, (2) a step of curing the photocurable resin layer, (3) a step of screen-printing the photocurable resin in a frame shape on the cured photocurable resin layer, and (4) a covering portion. And a step of curing the photocurable resin.

  2nd this invention is related with the said method including repeating process (2) and (3) 1 or more times in this order between process (1) and process (4).

  3rd this invention is related with the said method whose frequency | count of repeating process (2) and (3) is 1-10 times.

  The fourth aspect of the present invention relates to the above method, wherein the steps (1) and (3) are carried out with light shielding.

  5th this invention is related with the said method of expanding the space | interval of a semiconductor substrate and a screen according to the thickness of the photocurable resin hardened | cured at the previous process before process (3).

  The sixth aspect of the present invention relates to the above method, wherein the photocurable resin is a cationic polymerizable epoxy, oxetane, vinyl resin, or radical polymerizable acrylic, methacrylic, or vinyl resin.

  7th this invention is related with the said method whose viscosity of photocurable resin is 10-1,000 Pa.s and thixo ratio is 1.5-8.0.

  The eighth aspect of the present invention relates to a semiconductor device manufactured by any one of the methods described above.

  According to the method for manufacturing a semiconductor device of the present invention, a partition wall having a height higher than 100 μm can be manufactured by a simple process. In addition, since a photo-curable resin is used, it can be used for a semiconductor substrate on which an imaging device with low heat resistance is formed. In addition, since all of the screen-printed photocurable resin can be photocured, the material yield is excellent and there is no exposure and development process. Excellent in health and safety.

  The present invention is described in detail below.

  The present invention includes a semiconductor substrate on which an image pickup device having a light receiving portion is formed, a covering portion that faces the light receiving portion and covers the image pickup device, and a photocurable resin partition that joins the image pickup device and the cover portion. (1) A step of screen-printing a photocurable resin layer in a frame shape on a part or all of an image pickup element or a cover part excluding a region where a light receiving part is formed, 2) a step of curing the photocurable resin layer, (3) a step of screen printing the photocurable resin in a frame shape on the cured photocurable resin layer, and if necessary, further steps (2), (3 ) Is repeated one or more times in this order, and (4) a step of mounting the covering portion and curing the photocurable resin is included.

  The semiconductor device according to the present invention includes a semiconductor substrate, a covering portion that covers the imaging element, and a photocurable resin partition that joins the imaging element and the covering portion, and the covering portion is disposed to face the light receiving portion. It is characterized by.

  An image sensor having a light receiving portion is formed on the semiconductor substrate in the present invention. A covering portion is disposed opposite to the light receiving portion, and the imaging element and the covering portion are joined by the partition wall, whereby the light receiving portion is disposed in a space formed by the semiconductor substrate, the covering portion, and the partition wall.

  In general, as shown in FIG. 1, an image sensor 3 is formed on a semiconductor substrate 2, and a light receiving unit 5 is formed in the image sensor 3. Of course, it is preferable to form a plurality of imaging elements on a single semiconductor substrate from the viewpoint of work efficiency and the like. At this time, the pitch between the image pickup devices is preferably 1000 μm or less, and particularly preferably 600 μm or less, from the viewpoint of the density of image pickup devices formed per semiconductor substrate.

  The image sensor according to the present invention is an optical light receiving sensor having a light receiving unit such as a photodiode and configured by a circuit such as a reading unit that reads an electric signal output from the light receiving unit, such as a CCD or a CMOS image sensor. It is done. An example of the size of the image sensor is 2 to 5 mm in width and 2 to 5 mm in length. As an example of the size of the light receiving portion, the width is 1.5 to 4.5 mm and the length is 1.5 to 4.5 mm.

  The covering portion in the present invention may be any material that can transmit light for curing the photocurable resin, and is preferably transparent, for example, glass. As an example of the magnitude | size of a coating | coated part, it is 2-5 mm in width and 2-5 mm in length.

  The partition wall in the present invention is obtained by curing a photo-curing resin, and in order to facilitate the management of foreign matter contamination in the image capturing apparatus in order to achieve a higher pixel density and higher density of the image capturing apparatus, The height is preferably 100 μm or more, more preferably 150 μm or more, further preferably 200 μm or more, and particularly preferably 250 μm or more. The width of the partition wall is preferably 1000 μm or less, and particularly preferably 600 μm or less, from the viewpoint of increasing the density of the image sensor in the semiconductor substrate.

  The photocurable resin in the present invention refers to a resin that becomes a cured resin when irradiated with light, and is a mixture containing a monomer, an oligomer or a prepolymer, an initiator, and the like. The photocurable resin is preferably a cationic polymerizable epoxy, oxetane, vinyl resin, or a radical polymerizable acrylic, methacrylic, or vinyl resin in terms of sealing properties. Examples of light include UV, visible light, electron beam, laser, X-ray, and γ-ray. UV is preferable from the viewpoint of productivity and versatility.

  The epoxy resin is a compound having a 3-membered ring ether, that is, an epoxy group in the molecule. Representative cationic polymerizable epoxy resins include bisphenol A type epoxy, bisphenol F type epoxy, phenol novolac type epoxy, cresol novolac type epoxy, hydrogenated bisphenol A type epoxy, rubber-modified epoxy, and partially acrylated bisphenol A type epoxy. Aliphatic epoxy, aromatic ring-containing epoxy, and alicyclic epoxy, and phenol novolak type epoxy, bisphenol A type epoxy, and bisphenol F type epoxy are preferable in terms of cure shrinkage and adhesiveness.

  The oxetane resin is a compound having a 4-membered ring ether, that is, an oxetanyl group in the molecule. Cationic polymerizable oxetane resins include 3-ethyl-{[(3-ethyloxetane-3-yl) methoxy] methyl} oxetane, 3-ethyl-3-phenoxymethyloxetane, 1,4-bis {[(3 -Ethyl-3-oxetanyl) methoxy] methyl} benzene includes aliphatic oxetanes and aromatic ring-containing oxetanes, and aromatic ring-containing oxetanes are preferred from the viewpoint of heat resistance.

  An acrylic (methacrylic) resin is a compound having an acryloyl (methacryloyl) group in the molecule. Examples of radically polymerizable acrylic resins include paracumylphenoxyethylene, glycol acrylate (methacrylate), t-butyl acrylate (methacrylate), ethoxylated phenyl acrylate (methacrylate), benzyl acrylate (methacrylate), and glycidyl acrylate (methacrylate). Aliphatic acryl (methacrylic) and aromatic ring-containing acryl (methacrylic), and aromatic ring-containing acrylates are preferred from the viewpoint of heat resistance.

  Vinyl resin is a compound having a vinyl group in the molecule. Examples of the cationic polymerizable or radical polymerizable vinyl resin include aliphatic ethers typified by vinyl ether, styrene, N-vinyl pyrrolidone, N-vinyl carbazole, and vinyls containing aromatic rings. From the viewpoint of reactivity, vinyl ether is used. preferable.

  The photocurable resin can contain a photopolymerization initiator. The photopolymerization initiator is not particularly limited as long as it is a known photopolymerization initiator that generates a cation or a radical upon irradiation with light and initiates polymerization of the photocurable resin. For example, 1-hydroxy-cyclohexyl-phenyl- Ketone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,4,6-trimethylbenzophenone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, 2-hydroxy-2-methyl-1- Phenyl-propan-1-one 2-hydroxy-2-methyl- [4- (1-methylvinyl) phenyl] propanol oligomer, 2,4-diethylthioxanthone, ethyl anthraquinone, 4,4′-bis [di (βhydroxy Ethoxy) phenylsulfinio] phenyl sulfide-bis-hexafluoroantimony 4,4′-bis [di (βhydroxyethoxy) phenyl sulfonate]] phenyl sulfide-bis-hexafluorophosphonate and 2,2-dimethoxy-1,2-diphenyl from the viewpoint of curability Ethan-1-one, (2,2-dimethoxy-1,2-diphenylethane-1-one, 4,4′-bis [di (βhydroxyethoxy) phenylsulfinio] phenyl sulfide-bis-hexafluoroantimony Nate is preferred.

  The photocurable resin can contain a solvent. The solvent is not particularly limited as long as it is a known solvent. For example, dipropylene glycol methyl ether, tripropylene glycol methyl ether, propylene glycol n-propyl ether, dipropylene glycol n-propyl ether, propylene glycol n-butyl ether, Dipropylene glycol n-butyl ether, tripropylene glycol n-butyl ether, dipropylene glycol dimethyl ether, dipropylene glycol methyl ether acetate, propylene glycol diacetate, 1,3-butylene glycol diacetate, cyclohexanol acetate, methyl acetate, ethyl acetate, Isopropyl acetate, n-propyl alcohol, n-propyl acetate, butyl acetate Propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, 3-methoxybutanol, 3-methoxybutyl acetate, 1, 3-butylene glycol, triacetin, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, propylene carbonate, 4-butyrolactone, propylene glycol monomethyl ether, propylene carbonate 4-butyrolactone is preferable.

  As long as the effect of the present invention is not impaired, the photocurable resin further includes other additives such as a photosensitizer, an antioxidant, a silane coupling agent, silica, talc, mica, mica, glass particles, Organic, inorganic, and organic-inorganic composite fillers typified by acrylic fine particles and styrene fine particles can be added.

  The viscosity of the photocurable resin is preferably 10 to 1,000 Pa · s, and more preferably 30 to 200 Pa · s, from the viewpoint of printability during screen printing. The thixo ratio is preferably 1.5 to 8.0 and more preferably 2.0 to 6.0 from the viewpoints of screen filling properties and plate separation. Here, the viscosity of the photocurable resin is measured using a cone / plate viscometer with a 3 ° × R14, 3 ° × R7.7 rotor at room temperature and 10 rpm. The thixo ratio is obtained from [viscosity at 1 rpm / 10 viscosity at 10 rpm] when the above-mentioned viscometer is used.

  In the screen printing in the present invention, a screen on which a pattern for forming a photocurable resin layer is formed is used. The opening of the screen is preferably 100 to 325 mesh, and if it is finer than 100 mesh, the extension of the pattern of the photocurable resin layer after screen printing can be suppressed within a predetermined roughness, and if it is coarser than 325 mesh, The thickness per screen printing can be about 30 μm or more.

  Next, a method for manufacturing a semiconductor device of the present invention will be described. FIG. 2 is a cross-sectional view showing an example of a method for manufacturing a semiconductor device.

  First, the semiconductor substrate 2 provided with the image sensor 3 is prepared (FIG. 2A). Next, a photocurable resin layer 40 is screen-printed in a frame shape on a part or all of the image pickup element 3 excluding the region where the light receiving portion 5 is formed (FIG. 2B), and then irradiated with light. Then, a cured photocurable resin layer 41 is formed (FIG. 2C).

  Next, the photocurable resin 42 is further screen-printed in a frame shape on the cured photocurable resin layer 41 (FIG. 2D). At this time, the photocurable resin 42 is screen-printed on the outline of the cured photocurable resin layer 41.

  The steps of FIGS. 2C and 2D are repeated as necessary, and are irradiated with light and cured to form a frame shape as shown in FIG. 2E, and a cured photocurable resin layer having a high aspect ratio. 400 is obtained (FIG. 2F).

  Further, the photocurable resin 401 is screen-printed in a frame shape on the cured photocurable resin layer 400 (FIG. 2G), and the covering portion 50 is mounted (FIG. 2H), and light irradiation is performed. The semiconductor device to which the covering portion 50 is bonded is manufactured using the photo-curable resin 402 cured in (1). At this time, the photocurable resin 401 is screen-printed on the outline of the cured photocurable resin layer 400. Further, when a plurality of image sensors are formed on the semiconductor substrate, the semiconductor substrate can be further divided for each image sensor by dicing or the like.

  In addition, the photocurable resin layer can be screen-printed on the covering portion. At this time, it is necessary to form a photocurable resin layer at least on the part facing the part or the whole of the imaging element except the region where the light receiving part of the covering part is formed, and the light receiving part of the covering part is formed. It is preferable to form a photocurable resin layer only on a portion facing a part or all of the image sensor excluding the formed region.

  Next, a method for forming a partition on a semiconductor substrate will be specifically exemplified. FIG. 3 is a cross-sectional view showing an example of a method for forming a partition on a semiconductor substrate. In this example, a UV lamp is used for light irradiation.

  The stage 6 on which the semiconductor substrate 2 is mounted is supported by the stage base 61 and can reciprocate between a position below the UV lamp 7 and a position below the screen printer 8.

  The shutter 71 in the closed state can prevent UV irradiation to the photocurable resin layer, and the shutter 72 in the open state can check UV on the photocurable resin layer. Install. Also, the UV lamp can be turned on / off in response to the opening / closing of the shutter.

  A general screen printing machine can be used. In the present invention, it is preferable to install a screen printer in the chamber. In the state 81 in which the chamber is open, the stage 6 can reciprocate, and in the state 82 in which the chamber is closed, the inside of the chamber can be decompressed by the vacuum pump 83. Moreover, polymerization of the photocurable resin during screen printing can be prevented by making the chamber light-shielding. The chamber is designed so that the screen position of the screen printing machine, the distance between the screen and the semiconductor substrate can be adjusted, and the photocurable resin can be supplied onto the screen.

  First, the semiconductor substrate 2 is mounted on the stage 6 (FIG. 3A). Next, the stage 6 is moved, the semiconductor substrate 2 is moved into the chamber, and the screen position relative to the semiconductor substrate 2 and the screen printing machine in which the space between the semiconductor substrates 2 and the screen are adjusted in advance are used as a photocurable resin layer. 40 is formed (FIG. 3B). At this time, it is preferable to close the chamber and reduce the pressure with the vacuum pump 83 from the viewpoint of suppressing bubbles in the photocurable resin 40.

  Next, after opening the chamber as necessary, the semiconductor substrate 2 is moved under the UV lamp 7. The shutter is opened, and UV light is irradiated for a predetermined time to obtain a photocured resin 41 that is photocured (FIG. 3C).

  The semiconductor substrate 2 is moved again into the chamber, and screen printing is performed in the same manner as the previous time to form the photocurable resin 42 (FIG. 3D). At this time, since the same screen as the previous printing can be used, the readjustment of the screen position with respect to the semiconductor substrate 2 is usually unnecessary, but the interval between the screen and the semiconductor substrate is the same as that of the photocurable resin 41. It is preferable to increase the thickness according to the thickness. The interval between the screen and the semiconductor substrate is preferably evaluated by the position of the squeegee / down stopper when the screen is pushed down by the squeegee at the time of printing. It is more preferable to evaluate.

  By repeating the steps of FIGS. 3C and 3D, a cured photocurable resin layer having a higher aspect ratio can be obtained. The number of repetitions is preferably 1 to 10 from the viewpoint of productivity.

  Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to these examples.

  As the semiconductor substrate, a silicon substrate shown in FIG. 4 (diameter of semiconductor substrate: 20.32 cm, thickness: 0.725 mm) was used. The size of each lattice of the semiconductor substrate is 5 mm wide and 5 mm long, and the width of the lattice is 0.5 mm. In addition, an outer periphery of 2 mm was provided around the semiconductor substrate.

  On a semiconductor substrate, Kyoritsu Chemical Industry Co., Ltd. Cationic Polymerizable Epoxy Resin (Product Name: World Lock No.X-8723P33), Screen Printing Machine (Model No .: LS-340VTVA) manufactured by Neurong Seimitsu Kogyo Co., Ltd. Was used for screen printing. The cationic polymerizable epoxy resin used had a viscosity of 100 Pa · s and a thixo ratio of 3.5. The screen used was a frame having a width of 750 mm, a length of 750 mm, and 200 mesh (thickness: 84 μm, total thickness: 105 μm). Screen printing was performed in a closed chamber as shown in FIG. 3B in vacuum (about 1330 Pa) while shielding light. Next, as shown in FIG. 3C, the shutter was opened and irradiated with UV. A metal halide lamp was used as the UV light source. The thickness and width of the photocuring resin layer on the lattice portion and the outer peripheral portion after UV curing were visually confirmed and measured at a plurality of locations using a microscope and a micrometer, and the average value and uniformity were obtained. Table 1 and FIG. 5 show the average values of the thickness and width of the photocurable resin layer, and Table 2 shows the results of the respective uniformity.

  In the same manner as in Example 1, screen printing was performed on the semiconductor substrate subjected to screen printing and UV irradiation in Example 1. At this time, the space between the screen and the semiconductor substrate was increased by 100 μm. Next, as in Example 1, UV irradiation was performed. In the same manner as in Example 1, the thickness and width of the photocurable resin layer on the lattice part and the outer peripheral part after UV curing were measured. The results are shown in Table 1 and FIG.

  The process of screen printing and UV irradiation was further repeated twice more on the semiconductor substrate subjected to screen printing and UV irradiation in Example 2. In the same manner as in Example 1, the thickness and width of the photocurable resin layer on the lattice part and the outer peripheral part after UV curing were measured. The results are shown in Table 1 and FIG.

  From the comparison between Example 1 and Example 3, when the number of screen printings is set to four, the height of the lattice part can be increased by about 4.1 times compared to the case of one screen printing. The width of was able to be suppressed to about 1.2 times.

  As described above, in the process of photocuring the screen-printed photocurable resin on the semiconductor substrate, the partition wall width was almost constant and the partition wall height was high, and the partition wall could be manufactured in a simple process. . Therefore, according to the method for manufacturing a semiconductor device of the present invention, a semiconductor device having a high partition without changing the width can be manufactured by a simple process.

  According to the present invention, a semiconductor device having a high partition without changing the width of the partition can be manufactured by a simple process.

It is a top view of a general semiconductor substrate. It is sectional drawing which shows an example of the method of manufacturing a semiconductor device. It is sectional drawing which shows an example of the method of manufacturing a semiconductor device. It is sectional drawing which shows an example of the method of forming a partition on a semiconductor substrate. It is sectional drawing which shows an example of the method of forming a partition on a semiconductor substrate. It is a top view of the semiconductor substrate used for the Example. It is a graph which shows the result of an Example. It is sectional drawing of the conventional image pick-up element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Image pick-up device 2 Semiconductor substrate 3 Image pick-up element 4 Partition 40 Photocurable resin layer 41, 43, 400 Cured photocurable resin layer 42, 401 Photocurable resin 402 Cured photocurable resin 5 Light-receiving part 50 Covering part 6 Stage 61 Stage base 7 UV lamp 71 Shutter in closed state 72 Shutter in open state 8 Screen printer 81 Chamber in closed state 82 Chamber in open state 83 Vacuum pump

Claims (8)

  A semiconductor substrate on which an image pickup device having a light receiving portion is formed, a coating portion facing the light receiving portion and covering the image pickup device, and a photocurable resin or photocurable and thermosetting bonding the image pickup device and the cover portion. A method of manufacturing a semiconductor device having a resin partition that also serves as a resin, and (1) a photocurable resin in a frame shape on a part or all of an image pickup element or a covering part excluding a region where a light receiving part is formed Or a step of screen-printing a resin layer having both photocurability and thermosetting, (2) a step of curing the photocurable resin or a resin layer having both photocuring and thermosetting, and (3) cured light. A step of screen-printing a photocurable resin or a resin having both photocurability and thermosetting on a curable resin or a resin layer having both photocurability and thermosetting, and (4) coating A hardened photocurable resin or a resin that combines photocurability and thermosetting. The method comprising the step, the to.   The method according to claim 1, further comprising repeating steps (2) and (3) one or more times in this order between step (1) and step (4).   The method of Claim 2 that the frequency | count of repeating process (2), (3) is 1-10 times.   The method according to any one of claims 1 to 3, wherein the steps (1) and (3) are carried out with light shielding.   Before the step (3), the interval between the semiconductor substrate and the screen is expanded according to the thickness of the photocurable resin cured in the previous step or the resin having both photocurable and thermosetting properties. The method of any one of these.   The photocurable resin or the resin having both photocurable and thermosetting properties is a cationic polymerizable epoxy, oxetane, vinyl resin, radical polymerizable acrylic, methacrylic, or vinyl resin. The method according to claim 1.   The viscosity of the photocurable resin or the resin having both photocurable and thermosetting properties is 10 to 1,000 Pa · s, and the thixo ratio is 1.5 to 8.0. The method according to claim 1.   A semiconductor device manufactured by the method according to claim 1.