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JP2010030263A - Photovoltaic cell for roofing tiles - Google Patents

Photovoltaic cell for roofing tiles Download PDF

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Publication number
JP2010030263A
JP2010030263A JP2008215961A JP2008215961A JP2010030263A JP 2010030263 A JP2010030263 A JP 2010030263A JP 2008215961 A JP2008215961 A JP 2008215961A JP 2008215961 A JP2008215961 A JP 2008215961A JP 2010030263 A JP2010030263 A JP 2010030263A
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JP
Japan
Prior art keywords
silicon
aluminum nitride
manufacturing
injection molding
aln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008215961A
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Japanese (ja)
Inventor
Akio Nishihara
章夫 西原
Shigeru Fujioka
繁 藤岡
Ichiro Matsuo
一郎 松尾
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FUJIOKA SEISAKUSHO KK
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FUJIOKA SEISAKUSHO KK
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Priority to JP2008215961A priority Critical patent/JP2010030263A/en
Publication of JP2010030263A publication Critical patent/JP2010030263A/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Producing Shaped Articles From Materials (AREA)
  • Photovoltaic Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method in which a sintered body close to real density which can easily be shaped with favorable precision and even in a complicated shape can be obtained using a group III-V element as a raw material. <P>SOLUTION: The manufacturing method injection-molds silicon and aluminum nitride powder. Five kinds of binders in a volume of 20%, 20%, 22%, 32%, and 6%, and Y (yttrium) and Ca (calcium) in a volume of 5% as a bonding agent are added to the raw material powder which are pressurized and kneaded. Furthermore, while a green body is subjected to a degreasing process at a vacuum sintering furnace, a sintering process is carried out. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

発明の詳細な説明Detailed Description of the Invention

この発明は、ＩＩ―ＶＩ族、ＩＩＩ−Ｖ族化合物半導体を簡素化できる射出成形法に関する技術である。The present invention relates to an injection molding method that can simplify II-VI group and III-V group compound semiconductors.

従来、半導体の材料として最も多く使われているのがシリコンです。従来の集積回路用の保護膜としてＳｉ３Ｎ４が主流である。Conventionally, silicon is the most widely used material for semiconductors. Si 3 N 4 is the mainstream as a protective film for conventional integrated circuits.

上述した技術の場合、おもにプレス成形での基板が主流で、焼結後の基板本体の密度に難があり、真密度９５％以上を求めるには問題があった。In the case of the above-described technique, the substrate formed by press molding is mainly used, and the density of the substrate body after sintering is difficult, and there is a problem in obtaining a true density of 95% or more.

発明が解決しようとする課題Problems to be solved by the invention

本発明は、請求項６での半導体用放熱基板での複雑な形状でも容易に、且つ、精度よく、真密度に近い値を得ることができるようにすることを主たる課題とする。The main object of the present invention is to make it possible to obtain a value close to the true density easily and accurately even with a complicated shape of the semiconductor heat dissipation substrate according to claim 6.

課題を解決するための手段Means for solving the problem

そのための手段は、射出成形して（複雑形状）、真空焼結炉で脱脂工程を行いつつ、焼結工程を行うことにある。The means for this is to perform the sintering step while performing the degreasing step in a vacuum sintering furnace by injection molding (complex shape).

上述の射出成形を行うために、バインダー５種を２０％、２０％、２２％、３２％、６％の容量とＹ（イットリュウム）やＣａ（カルシウム）を結合剤に５％の容量を加圧混練するにある。In order to perform the above-described injection molding, 5 types of binders are added to 20%, 20%, 22%, 32%, 6% and Y (yttrium) or Ca (calcium) as a binder. In pressure kneading.

上述の有機アルミニウム法は反応活性の大きい表面積を増大して燃焼性を向上させる。また、酸素含有量の増大と微粉化に伴う充填率の向上にある。The organoaluminum method described above increases the surface area with high reaction activity and improves the combustibility. Moreover, it exists in the improvement of the filling rate accompanying the increase in oxygen content and pulverization.

高熱伝導性という観点から見た不純物では、ＡｌＮに拡散固溶しやすい原子、たとえば、Ｓｉ，Ｆｅ，Ｔｉ，Ｍｇ，Ｏなど有害で、一方Ａｌ３＋イオン半径の大きいＹ，Ｃａなどは熱伝導率を低下させず有効である。From the viewpoint of high thermal conductivity, impurities that are easily diffused and dissolved in AlN, such as Si, Fe, Ti, Mg, and O, are harmful, while Y 3 and Ca that have a large Al 3+ ion radius have thermal conductivity. It is effective without lowering.

成形性（充填性、均質性）は粉体の粒径、粒度分布、成形用添加剤（バインダー）により支配される。Formability (fillability, homogeneity) is governed by the particle size, particle size distribution, and molding additive (binder) of the powder.

発明の効果The invention's effect

以上の発明は、珪素や窒化アルミニウム素材の持つ特性から、複雑な形状となっても射出成形が可能となり、焼結処理後に別途、追加工も不要であるため、コストもかからず、精度よく半導体用基板を製造することができる。The above inventions can be injection-molded even with complicated shapes due to the characteristics of silicon and aluminum nitride materials, and no additional processing is required after the sintering process. A semiconductor substrate can be manufactured.

上述した珪素やＡｌＮ粉末の射出成形方法は、精度・密度を確保することができ、しかも、Ｓｉ２Ｏ３、ＡｌＮ粉末に他元素を添加することによる単結晶・多結晶等の新素材・新商品の開発が可能となる。The above-described injection molding method of silicon or AlN powder can ensure the accuracy and density, and can also provide new materials such as single crystals and polycrystals by adding other elements to Si 2 O 3 and AlN powder. Product development becomes possible.

本発明は、プラスチックスの成形法を基礎に開発されたもので、比較的に小型で複雑形状を持つ高品質高精度部品の生産自動化や大量生産を可能とする。The present invention was developed on the basis of a plastics molding method, and enables production automation and mass production of high-quality high-precision parts having a relatively small size and complicated shape.

均一な混合物・混練物を得ることが容易である。It is easy to obtain a uniform mixture / kneaded product.

混合物・混練物が良好な流動性を持ち金型中に均一に充填される。The mixture / kneaded material has good fluidity and is uniformly filled in the mold.

混合物・混練物が容易に固化し、且つ固化時や金型からの取り出しに不均一や欠陥を生じない。The mixture / kneaded material is easily solidified and does not cause unevenness or defects during solidification or removal from the mold.

バインダーの除去が容易であり除去プロセスで時（脱脂工程）に欠陥を生じなく、そのまま真空焼結を行うことで、初期設備投資が少なく済む。（商標登録済み）It is easy to remove the binder, and there is no defect during the removal process (degreasing process). By performing vacuum sintering as it is, initial capital investment can be reduced. (Trademark registered)

発明の一実施の形態を、以下図面を用いて説明する。
図１は、ＡｌＮの平面図・側面図・断面図を示し、
図２は、フローチャートを示す。
図３は、ＯＮＥ−ＳＴＥＰ脱脂・工程・時間等のプログラムを示す。An embodiment of the invention will be described below with reference to the drawings.
FIG. 1 shows a plan view, a side view, and a sectional view of AlN.
FIG. 2 shows a flowchart.
FIG. 3 shows a program such as ONE-STEP degreasing / process / time.

符号の説明Explanation of symbols

１ 浅瓦ＪＩＳ規格
２ バックシート
３ 太陽電池セル1 Shallow tile JIS standard 2 Back sheet 3 Solar cell

Claims (6)

珪素や窒化アルミニウム粉末を射出成形法におけるバインダーの混練法Binder kneading method in injection molding of silicon or aluminum nitride powder 請求項１での珪素や窒化アルミニウムペレットにおける射出成形法Injection molding method for silicon or aluminum nitride pellets according to claim 1 請求項２でのグリーン体の真空焼結炉での脱脂焼結プログラム（ＯＮＥ−ＳＴＥＰ法）作成法A method of creating a degreasing and sintering program (ONE-STEP method) in a vacuum sintering furnace for a green body according to claim 2 請求項３でのシルバー体のｐ型、ｎ型の太陽電池製作方法A method for manufacturing a p-type or n-type solar cell of silver body according to claim 3 屋根瓦用バックシートの製作法Production method of roof tile back sheet 半導体用放熱基板（ＡｌＮ）、超高周波表面弾性波素子（ＡｌＮ 単結晶、膜）などの機能性特徴とする材料。Materials with functional characteristics such as semiconductor heat dissipation substrate (AlN), super high frequency surface acoustic wave device (AlN single crystal, film).
JP2008215961A 2008-07-28 2008-07-28 Photovoltaic cell for roofing tiles Pending JP2010030263A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008215961A JP2010030263A (en) 2008-07-28 2008-07-28 Photovoltaic cell for roofing tiles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008215961A JP2010030263A (en) 2008-07-28 2008-07-28 Photovoltaic cell for roofing tiles

Publications (1)

Publication Number Publication Date
JP2010030263A true JP2010030263A (en) 2010-02-12

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Application Number Title Priority Date Filing Date
JP2008215961A Pending JP2010030263A (en) 2008-07-28 2008-07-28 Photovoltaic cell for roofing tiles

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8511006B2 (en) 2009-07-02 2013-08-20 Owens Corning Intellectual Capital, Llc Building-integrated solar-panel roof element systems
US8782972B2 (en) 2011-07-14 2014-07-22 Owens Corning Intellectual Capital, Llc Solar roofing system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8511006B2 (en) 2009-07-02 2013-08-20 Owens Corning Intellectual Capital, Llc Building-integrated solar-panel roof element systems
US8782972B2 (en) 2011-07-14 2014-07-22 Owens Corning Intellectual Capital, Llc Solar roofing system

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