JP2010029098A - Lighting device for growing plant - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lighting device for growing plants enabling efficient growth of plants. <P>SOLUTION: The lighting device for growing plants supplies light necessary for growth of plants, and includes: a first fluorescence part having semiconductor light-emitting elements each having an emission sector in a near-ultraviolet sector or an ultraviolet sector, and a red fluorescent material excited by light emission from the semiconductor light-emitting elements to fluoresce red light, and ejecting at least the red light from the red fluorescent material to the outer part; a second fluorescence part having semiconductor light-emitting elements each having an emission sector in a near-ultraviolet sector or an ultraviolet sector, and blue fluorescent material excited by light emission from the semiconductor light-emitting elements to fluoresce blue light, and ejecting at least the blue light from the blue fluorescent material to the outer part; and an electric power supply part supplying electric power to each of the semiconductor light-emitting elements which the first fluorescence part has and the semiconductor light-emitting element which the second fluorescence part has. The red light ejected from the first fluorescence part and the blue light ejected from the second fluorescence part are synthesized and the synthesized light is illuminated to the plants. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a lighting device for growing plants.

  The technology of so-called plant factories has been developed, in which plants such as vegetables and ornamental plants are irradiated with artificial light in hydroponic cultivation to grow plants stably without being affected by the season or weather. Yes. The plant factory technology, which enables the provision of stable foods, has been gaining much attention, even in light of the recent problems of food self-sufficiency and population growth. Here, a high-pressure sodium lamp has been conventionally used as an artificial light source in a plant factory, but the spectral distribution does not favor the balance of red and blue components necessary for plant growth. Therefore, a technique is disclosed in which a semiconductor light emitting element that emits red light and blue light is used in place of the high-pressure sodium lamp, and the light intensity ratio between red light and blue light is 8: 1 to 12: 1 ( For example, see Patent Document 1.)

Similarly, it is a technology that uses a semiconductor light emitting device as a light source, and in generating red light and blue light to irradiate a plant, the emitted light from the semiconductor light emitting device is used for blue light, and that for red light A technique using light emission from a phosphor that is excited by light emitted from a semiconductor light emitting element and fluoresces in red is disclosed (see, for example, Patent Document 2).
JP-A-10-178899 JP 2002-27831 A, particularly claim 5 JP 2001-86860 A

  In order to grow a plant efficiently, it is preferable to irradiate light containing red and blue components in consideration of the light absorption of chlorophyll of the plant. Here, in the high pressure sodium lamp conventionally used as the light source, although the light intensity of the lamp itself is relatively high, the light spectrum appropriately includes red and blue components necessary for plant growth. It's hard to say. Further, since a high pressure sodium lamp generates relatively large heat generation along with light emission, it is necessary to increase the distance between the light source and the plant in order to reduce the influence on the plant. As a result, waste of light from the light source occurs and its growth is not necessarily efficient.

  Further, when the semiconductor light emitting element is used as a light source, it is possible to reduce the heat generation as compared with the high pressure sodium lamp. However, since the light emitted from the semiconductor light emitting element is extremely directional, it is difficult to synthesize both even if the emitted light from the semiconductor light emitting element is used as red light or blue light. Difficult to be irradiated. As a result, it is difficult to deliver red light and blue light uniformly to the chlorophyll of the plant, which is considered to hinder efficient plant growth.

  In view of the above problems, an object of the present invention is to provide a lighting device that enables efficient plant growth.

In order to solve the above-mentioned problems, the present invention uses a semiconductor light emitting element having a light emitting region in the near ultraviolet region or the ultraviolet region as a light source of red light and blue light necessary for plant growth, and each semiconductor. Fluorescent portions that are excited by light emitted from the light emitting element and fluoresce in red and blue are respectively provided. By using red light and blue light as fluorescent light emitted by the fluorescent part, both are synthesized well so that plants can be grown efficiently.

  Specifically, the present invention relates to a lighting device that supplies light necessary for plant growth, and is excited by light emitted from a semiconductor light emitting device having a light emitting region in the near ultraviolet region or the ultraviolet region, and the semiconductor light emitting device. A semiconductor light emitting element having a red phosphor that fluoresces red light, a first fluorescent light emitting unit that emits at least red light from the red phosphor to the outside, and a light emitting region in the near ultraviolet region or the ultraviolet region And a second fluorescent light-emitting unit that emits at least blue light from the blue phosphor to the outside, and a blue phosphor that is excited by light emitted from the semiconductor light-emitting element and emits blue light. A semiconductor light emitting element included in one fluorescent light emitting unit, and a power supply unit configured to supply power to each of the semiconductor light emitting elements included in the second fluorescent light emitting unit. Then, the red light emitted from the first fluorescent light emitting unit and the blue light emitted from the second fluorescent light emitting unit are combined and the plant is irradiated with the combined light.

  The light emitted from the first fluorescent light emitting unit includes at least red light fluorescently emitted by the red phosphor, and further includes near-ultraviolet light or ultraviolet light of the semiconductor light emitting element that is excitation light of the red phosphor. There is also. Further, the light emitted from the second fluorescent light emitting unit includes at least blue light fluorescently emitted by the blue phosphor, and also includes near-ultraviolet light or ultraviolet light of the semiconductor light-emitting element that is excitation light of the blue phosphor. May include. Therefore, in the illumination device according to the present invention, the red light and the blue light are not highly directional light like the light emitted from the semiconductor light emitting element, but are light sufficiently scattered by the phosphor. Therefore, the red light emitted from the first fluorescent light emitting part and the blue light emitted from the second fluorescent light emitting part are easily synthesized well, and color separation is unlikely to occur when the plant is irradiated. Therefore, it becomes possible to deliver the red light and blue light necessary for the growth to the chlorophyll, which is greatly involved in the growth of the plant, and contributes to the efficient growth.

  It should be noted that near ultraviolet light or ultraviolet light (hereinafter simply referred to as “near ultraviolet light”), which is direct light emitted from the semiconductor light emitting element, is also used to grow plants to some extent even if it is not as red light and blue light. It is known to contribute light. However, for near-ultraviolet light and the like, since it can be emitted from both the first fluorescent light emitting part and the second fluorescent light emitting part, it is possible to irradiate the plant evenly without synthesizing like red light and blue light. It will be possible.

  Here, in the illumination device, the ratio of the energy of the red light emitted from the first fluorescent light emitting unit to the energy of the blue light emitted from the second fluorescent light emitting unit is variable by the power supply of the power supply unit. It may be controlled. It is considered that the energy ratio of red light by the first fluorescent light emitting part and blue light by the second fluorescent light emitting part varies depending on the characteristics of the plant to be grown. Therefore, by controlling the energy ratio so that it can be varied in this way, it is possible to suitably cope with the growth of various types of plants, and also corresponding to the energy ratio that may vary according to the growth of the plant. become able to.

  In many plants, the energy ratio falls within the range of 2 to 10, and the energy ratio may be controlled within the range. In the lighting device according to the present invention, the range of the energy ratio is not necessarily limited to this, and can be appropriately changed according to plant growth. Generally, since the red light energy contributes more effectively to plant growth than the blue light energy, the ratio is preferably a value exceeding 1.

It is well known that the spectrum of light absorbed by the chlorophyll has peaks in the red region and the blue region for growing plants. Therefore, out of the energy of the light irradiated to the plant by the first fluorescent light emitting unit and the second fluorescent light emitting unit, red light from the first fluorescent light emitting unit from the near ultraviolet light or ultraviolet light region by the semiconductor light emitting element. Energy of red light by the first fluorescent light emitting part, energy of blue light by the second fluorescent light emitting part, and energy of near ultraviolet light or ultraviolet light by the semiconductor light emitting element with respect to the total light energy in the range up to The ratio of the total energy may be 95% or more. By doing in this way, plant cultivation becomes more efficient.

  Here, an example is given about more specific arrangement | positioning of a 1st fluorescence light emission part and a 2nd fluorescence light emission part in the said illuminating device. For example, in the illuminating device, a package that opens in the emission direction of the illuminating device, and a package in which the inside of the package is divided into a plurality of divided regions so as to include a part of the opening, respectively, Furthermore, it comprises so that it may be provided. The first fluorescent light emitting unit is provided in one divided region in the package, and the second fluorescent light emitting unit is in another divided region different from the one divided region in the package. It may be provided. In other words, each of the first fluorescent light emitting unit and the second fluorescent light emitting unit is defined in one package. Thereby, since the emitted light from each division | segmentation area part turns into red fluorescence and blue fluorescence, respectively, the synthesis | combination of each fluorescence is performed favorably after emission.

  Further, as another arrangement form of the first fluorescent light emitting unit and the second fluorescent light emitting unit, when configured to further include the package in the illumination device, one divided region unit among the plurality of divided region units, In two of the other divided region portions, the second fluorescent light emitting portion is provided only in the one divided region portion, and the first fluorescent light emitting portion straddles the one divided region portion and the other divided region portion. May be provided. That is, in order to emit more red light as irradiation light of the lighting device, the red phosphor and the blue phosphor are arranged together in one divided region, and only the red phosphor is arranged in the other divided region. To do. This is because the energy of red light contributes more effectively to the growth of plants than the energy of blue light.

  In addition, about arrangement | positioning of a 1st fluorescence light emission part and a 2nd fluorescence light emission part, it is not restricted to the above-mentioned example. For example, a first fluorescent light emitting unit for red light may be arranged in one package, and a second fluorescent light emitting unit for blue light may be arranged in another package to prepare a dedicated package for each color. And you may comprise an illuminating device by combining a 1st fluorescence light emission part and a 2nd fluorescence light emission part suitably in a package unit. Also, other arrangements that allow efficient training can be employed.

  According to the illumination device of the present invention, it is possible to irradiate a plant with red light and blue light without unevenness, thereby enabling efficient plant growth.

  Here, the Example of the illuminating device for plant cultivation which concerns on this invention is described based on drawing attached to this specification. In addition, the said Example shows an example of the illuminating device which concerns on this invention, and does not limit the scope of the right of this invention to it.

FIG. 1 shows a schematic configuration of a production apparatus 40 for efficiently producing a large amount of plants. The production apparatus 40 has a multi-stage structure in which a production base 42 on which a plant to be cultivated (hereinafter referred to as “growing plant”) is produced is supported by a plurality of support poles 43 (FIG. 1). In the state shown in FIG. 2, the lighting base 41 is provided at each stage. The production base 42 is a tray filled with a fertilizer solution in which a fertilizer for growing plants is dissolved, and the fertilizer solution is circulated between the upper production base 42 and the lower production base 42 by pumping of the pump 48. The In addition, the side of the production apparatus 40 in which the production base 42 is assembled in multiple stages is covered with a transparent acrylic plate 49, and the acrylic plate 49 and the production base 4 are disposed above the production apparatus 40.
A fan 47 that ventilates the production apparatus 40 using a space formed between the two is provided.

  Here, the electric power consumed by the production apparatus 40 is covered by the power generation of the solar cell 44 provided on the ceiling portion. The electric power generated by the solar cell 44 is stored in a battery 45 installed in a pedestal 46 provided at the lower part of the production apparatus 40, and from here to an illumination base 41, a fan 47, and a pump 48 as necessary. Power is supplied. In addition, since the base 46 is non-transparent, the battery 45 cannot be visually recognized from the outside.

  Further, a detailed configuration of the production base 42 will be described with reference to FIG. 2A. FIG. 2A is a top view of the production base 42. Thus, the production base 42 is supported by the six support poles and has a hexagonal shape. And in the center part, the breeding plant planted in the pot 50 for cultivation is arrange | positioned at seven places. The distance between the growing pots 50 is determined based on the degree of growth of the plant to be grown. A ventilation space through which the wind from the fan 47 passes is formed around the production base 42.

  Next, a detailed configuration of the illumination base 41 that illuminates the cultivated plant on the production base 42 configured as described above will be described with reference to FIG. 2B. FIG. 2B is a bottom view of the illumination base 41. Like the production base 42, the illumination base 41 is also supported by six support poles and has a hexagonal shape. And in the central part, the five illuminating devices 8 are provided for every part (it is a part marked with the dotted line in FIG. 2B, and there are seven places) facing each growing pot 50 on the production base 42. Arranged as one unit. Therefore, 35 illumination devices 8 are used in the illumination base 41 shown in FIG. 2B.

  In the production apparatus 40 configured as described above, the lighting device 8 installed in the lighting base 41 emits light by the electric power generated by the solar battery 44, so that light necessary for growing the growing plant is supplied and fertilizer is also provided. Is also supplied as a fertilizer solution in the production base 42, so that the growing plant is efficiently grown. Furthermore, since the production apparatus 40 is blocked from the outside by the acrylic plate 49, the growing plant is not exposed to disturbance, and as a result, the amount of agricultural chemicals to be used can be reduced. As described above, the production apparatus 40 can efficiently grow plants, but by further illuminating the plants with the lighting device 8 as described below, it is possible to further increase the efficiency of plant growth. And

Here, it shows in FIG. 3 about the light absorption characteristic of chlorophyll required for photosynthesis of a plant. In FIG. 3, the horizontal axis represents wavelength, and the vertical axis represents light absorbance. FIG. 3 shows light absorption characteristics of two types of chlorophylls, Chlorophyll a and Chlorophyll b, as common plant chlorophylls. Bacteriochlorophyll (Bacteriochlorophyll)
In the present invention, a need not be considered. As can be seen from FIG. 3, light absorption peaks appear in any chlorophyll in the blue region from purple to blue and the red region from orange to red, but in the green region between both regions, The light absorption peak is relatively small. On the other hand, when the spectrum of human visible light is superimposed in FIG. 3, the light intensity increases from the blue region to the green region. Thus, the light absorption characteristics of plants and the intensity characteristics of human visible light do not necessarily match, and in order to increase the efficiency of plant growth, visible light is irradiated as it is. It has been shown that it is not enough.

Therefore, the lighting device 8 for plant growth according to the present invention performs light irradiation in consideration of the light absorption characteristics of chlorophyll shown in FIG. 3 in order to efficiently grow plants. Specifically, the illuminating device 8 irradiates the growing plant with the light in the red region and the light in the blue region in a concentrated and uniform manner. This makes it possible to deliver both red light and blue light, which are essential for photosynthesis in plant chlorophyll, and therefore, efficient plant growth can be expected. In particular, when light is applied to a plant, the light in the red region and the light in the blue region do not separate colors and are synthesized well, so that the light in both regions can be delivered well to fine chlorophyll. Therefore, it is considered that it contributes to efficient plant growth.

<Configuration of lighting device 8>
4A, 4B, and 5 show the configuration of the illumination device 8 that enables the above-described light irradiation. 4A is a perspective view of a schematic configuration of one of the packages 1 included in the lighting device 8, and FIG. 4B is a wiring for supplying power to the semiconductor light emitting elements 3A and 3B provided in the package 1. It is a figure which shows the mounting state of 20A, 20B. FIG. 5 is a cross-sectional view of the lighting device 8 shown in FIG. 4A when cut along a plane including the wirings 20A and 20B. As shown in FIG. 4A, the lighting device 8 includes a package 1, and the package 1 includes an annular and truncated cone-shaped reflector 10 disposed on a substrate 2. The reflector 10 has a function of guiding a part of output light from each divided region portion 12 (12A, 12B), which will be described later, in the emission direction of the illumination device 8, and also functions as a main body of the package 1. In addition, the upper surface side of the truncated cone shape of the reflector 10 becomes a light emission direction by the illumination device 8 and forms an opening 13. On the other hand, the substrate 2 is arranged on the lower surface side of the truncated cone shape of the reflector 10, and although details will be described later, wiring for power supply to each semiconductor light emitting element is laid or the like (the wiring is shown in FIG. 4A). Not shown).

  A partition 11 that divides the space inside the annular reflector 10 into two regions is provided perpendicular to the substrate 2. The partition 11 defines two divided area portions 12A and 12B in the reflector 10, and in FIGS. 4A, 4B, and 5, the opening of the divided area portion 12A is located on the right side of the opening 13 of the reflector 10. It occupies half, and the opening of the divided region portion 12B occupies the left half of the opening 13 of the reflector 10. In the present application, the opening of the divided region portion 12A is referred to as a divided opening portion 13A, and the opening portion of the divided region portion 12B is referred to as a divided opening portion 13B. That is, the opening 13 is divided into the divided openings 13A and 13B by the partition 11.

  Each of the divided region portions 12A and 12B is provided with four near-ultraviolet semiconductor light-emitting elements 3A and 3B each of which is a semiconductor light-emitting element and outputs near-ultraviolet light as output light. These near-ultraviolet semiconductor light-emitting elements 3A and 3B (when these near-ultraviolet semiconductor light-emitting elements are comprehensively referred to are referred to as near-ultraviolet semiconductor light-emitting elements 3), paired wirings 20A and 20B (generally wiring 20 Are connected to each other and emit light when receiving power supply. As shown in FIG. 4B, the connection of the near-ultraviolet semiconductor light-emitting element 3 to the wiring 20 in each divided region portion includes four near-ultraviolet semiconductor light-emitting elements 3A mounted on the wiring 20A. Four near-ultraviolet semiconductor light emitting elements 3B are mounted thereon. The four semiconductor light emitting elements 3 in each divided region are connected in parallel to the corresponding wiring in the forward direction.

Here, mounting of the near-ultraviolet semiconductor light-emitting element 3 on the substrate 2 will be described with reference to FIG. The substrate 2 is a base for holding the illumination device 8 including the near ultraviolet semiconductor light emitting element 3, and is formed on the metal base member 2A, the insulating layer 2D formed on the metal base member 2A, and the insulating layer 2D. The pair wirings 20C and 20D are provided. The near-ultraviolet semiconductor light-emitting device 3 has a pair of electrodes, a p-electrode and an n-electrode, on the bottom and top surfaces facing each other. The bottom electrode is die-bonded. At this time, in consideration of heat dissipation of heat generated in the near-ultraviolet semiconductor light-emitting element, the silver paste 5 as an adhesive was applied thinly and uniformly. After coating, the silver paste was cured by heating at 150 ° C. for 30 minutes, and then the electrode on the upper surface side of the near-ultraviolet semiconductor light-emitting element 3 was wire-bonded to the other pair wiring 20D with a metal wire 6. As the wire 6, a gold wire having a diameter of 25 μm was used. The pair of wirings 20C and 20D form a pair of wirings 20A or 20B shown in FIG. 4B, and power is supplied to the four near-ultraviolet semiconductor light-emitting elements 3 in each divided region.

  Note that the electrical connection between the near-ultraviolet semiconductor light-emitting element 3 and the pair of wirings 20C and 20D on the substrate 2 is not limited to the form shown in FIG. It can be done in an appropriate way. For example, when a set of electrodes is provided only on one surface of the near-ultraviolet semiconductor light-emitting element 3, the near-ultraviolet semiconductor light-emitting element 3 is installed with the surface on which the electrode is provided facing upward. The pair wirings 20C and 20D and the near-ultraviolet semiconductor light emitting element 3 can be electrically connected by connecting the respective pair wirings 20C and 20D with, for example, gold wires 6. When the near-ultraviolet semiconductor light-emitting element 3 is flip-chip (face-down), the electrodes of the near-ultraviolet semiconductor light-emitting element 3 and the pair wirings 20C and 20D are electrically connected by bonding with gold bumps or solder. Can do.

<Near UV semiconductor light emitting device>
Here, the near-ultraviolet semiconductor light-emitting element 3 emits light in the near-ultraviolet region (emission wavelength region of 360 nm to 430 nm) when power is supplied, and fluorescent light-emitting portions 14A and 14B described later (inclusive fluorescent light emission). It may also be referred to as part 14). Among these, a GaN-based semiconductor light-emitting element using a GaN-based compound semiconductor is preferable. This is because the GaN-based semiconductor light-emitting device emits light in this region, but the light output and external quantum efficiency are remarkably large, and when combined with a phosphor described later, very light emission can be obtained with very low power. Because. In the GaN-based semiconductor light emitting device, one having an AlxGayN light emitting layer, a GaN light emitting layer, or an InxGayN light emitting layer is preferable. Among the GaN-based semiconductor light-emitting elements, those having an InxGayN light-emitting layer are particularly preferable because the emission intensity is very strong, and those having a multiple quantum well structure of an InxGayN layer and a GaN layer have a very high emission intensity. It is particularly preferable because it is strong.

  In the above composition formula, the value of x + y is usually in the range of 0.8 to 1.2. In the GaN-based semiconductor light-emitting device, those in which these light-emitting layers are doped with Zn or Si and those without a dopant are preferable for adjusting the light emission characteristics.

  A GaN-based semiconductor light-emitting element has these light-emitting layer, p-layer, n-layer, electrode, and substrate as basic components, and the light-emitting layer is an n-type or p-type AlxGayN layer, GaN layer, or InxGayN layer. Those having a sandwiched heterostructure are preferable because of high light emission efficiency, and those having a heterostructure as a quantum well structure are more preferable because of high light emission efficiency.

  Further, examples of the growth method of the GaN-based crystal layer for forming the GaN-based semiconductor light emitting device include HVPE method, MOVPE method (MOCVD method), MBE method and the like. When forming a thick film, the HVPE method is preferable, but when forming a thin film, the MOVPE method (MOCVD method) and the MBE method are preferable.

  As described above, various semiconductor light-emitting elements can be used as the near-ultraviolet semiconductor light-emitting element 3 employed in the illumination device 8 according to the present embodiment. In this specification, as an example, a GaN-based semiconductor light-emitting element in which an epi layer having a near-ultraviolet light-emitting element structure is formed on a sapphire substrate by a MOVPE method (MOCVD method) is employed. At this time, the emission wavelength peak was 405 nm.

As shown in FIG. 6, on the substrate 2, a plurality of or single phosphors that absorb a part of the light emitted from the near-ultraviolet semiconductor light-emitting element 3 and emit light of different wavelengths and the phosphors A fluorescent light emitting portion 14 containing a light-transmitting material to be sealed is provided so as to cover the near ultraviolet semiconductor light emitting element 3. In addition, although description of the reflector 10 is abbreviate | omitted in FIG. 6, such a form can also become one form of the illuminating device 8 comprised from the package 1. FIG. Part or all of the light emitted from the near-ultraviolet semiconductor light-emitting element 3 is absorbed as excitation light by the light-emitting substance (phosphor) in the fluorescent light-emitting portion 14. More specifically, the fluorescent light emitting part in the illumination device 8 will be described with reference to FIG. 5. In the divided region part 12A, the fluorescent light emitting part 14A covers the near-ultraviolet semiconductor light emitting element 3A, and the fluorescent light emitting part 14A has a divided opening. It is exposed at the portion 13A. Further, in the divided region portion 12B, the fluorescent light emitting portion 14B covers the near ultraviolet semiconductor light emitting element 3B, and the fluorescent light emitting portion 14B is exposed at the divided opening portion 13B. Therefore, the output light from each fluorescent light emitting part is emitted to the outside from each divided opening.

<About fluorescent light emitting part>
Since the illumination device 8 includes two divided region portions 12A and 12B, it is included in the fluorescent light emitting portions 14A and 14B so that the red region light and the blue region light are emitted from each divided region portion. A phosphor is selected. In the present embodiment, the fluorescent light emitting portion 14A includes a red phosphor that fluoresces and emits red light by excitation of the near ultraviolet semiconductor light emitting device 3A, and the fluorescent light emitting portion 14B includes the near ultraviolet semiconductor light emitting device 3B. It is assumed that a blue phosphor that fluoresces and emits blue light by excitation of.

  Here, exemplifying the specific wavelength range of the fluorescence emitted by the red phosphor suitable for the present invention, the main emission peak wavelength is usually 570 nm or more, preferably 580 nm or more, particularly preferably 610 nm or more, It is 700 nm or less, preferably 680 nm or less, particularly preferably 640 nm or less. The half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 120 nm or less, preferably 110 nm or less, particularly preferably 100 nm or less.

As an example of such a red phosphor, high-luminance CASN can be adopted. The following is one of high luminance CASN, illustrates the preparation of Ca _0.985 Eu _0.015 AlSiN _3. First,
Ca ₃ N ₂ , AlN, Si ₃ N ₄ and EuF ₃ are weighed so that the charged composition ratio of the metal element is Ca _0.985 Eu _0.015 AlSi _1.03 . Specifically, 68.61 g of Ca ₃ N ₂ (manufactured by CERAC incorporated), 57.37 g of AlN (manufactured by Tokuyama Corporation), Si ₃ N ₄ (
74.61 g (manufactured by Ube Industries, Ltd.) and 2.34 g of EuF3 (manufactured by Shin-Etsu Chemical Co., Ltd.) were used.

These red phosphor raw material powders were mixed in a N ₂ glove box using a mixer until uniform, and the resulting mixture was filled into a BN crucible and lightly loaded to compress the filling. This was installed in a resistance heating type vacuum heat treatment furnace (manufactured by Fuji Denpa Kogyo Co., Ltd.) and from room temperature to 800 ° C. under reduced pressure of <5 × 10 ⁻³ Pa (ie, less than 5 × 10 ⁻³ Pa). Vacuum heating was performed at a temperature rising rate of 10 ° C./min. When the temperature reached 800 ° C., high-purity nitrogen gas (99.9995%) was introduced for 30 minutes until the pressure was 0.5 MPa while maintaining the temperature. After the introduction, while maintaining 0.5 MPa, the temperature was further increased to 1800 ° C. at a rate of temperature increase of 5 ° C./min, maintained at that temperature for 3 hours, and then allowed to cool to room temperature. Thereby, Ca _0.985 Eu _0.015 AlSiN ₃ is obtained.

  Next, exemplifying the specific wavelength range of the fluorescence emitted by the blue phosphor suitable for the present invention, the main emission peak wavelength is usually 430 nm or more, preferably 440 nm or more, and usually 480 nm or less, preferably 460 nm. It is as follows. Further, the half width of the main emission peak is usually 1 nm or more, preferably 10 nm or more, particularly preferably 30 nm or more, and is usually 100 nm or less, preferably 80 nm or less, particularly preferably 70 nm or less.

As an example of such a blue phosphor, high-luminance BAM can be employed. Below, high brightness BA
The production of M will be described. As a blue phosphor raw material, barium carbonate (BaCO ₃ ), europium oxide (Eu ₂ O ₃ ), basic magnesium carbonate (mass of 93.17 per 1 mol of Mg), and α-alumina (Al ₂ O ₃ ) are respectively weighted. 0.552 g, 0.211 g, 0.373 g, and 2.038 g were weighed and used.

The phosphor materials described above were mixed in a mortar for 30 minutes, then filled in an alumina crucible, and fired at 1200 ° C. for 5 hours under atmospheric pressure. The obtained fired product was crushed, filled in an alumina crucible, and fired at 1450 ° C. for 5 hours in a weak reducing atmosphere while flowing nitrogen gas containing 4% by volume of hydrogen. The obtained fired product was crushed, and 0.8% by weight of KF was added to and mixed with the crushed product, and the mixture was filled in an alumina crucible. A bead-like graphite was placed in the space around the crucible during firing to create a reducing atmosphere, and firing was performed at 1550 ° C. for 5 hours under atmospheric pressure. The obtained fired product was crushed, classified, and washed to obtain a blue phosphor. The composition formula of the blue phosphor thus obtained was Ba _0.7 Eu _0.3 MgAl ₁₀ O ₁₇ . The obtained blue phosphor was subjected to elemental analysis. As a result, the content of K (potassium) with respect to the number of sites that can be substituted by Eu was 2.0 mol%, and the content of F (fluorine) was 0.00. It was 3 mol%.

  The illumination device 8 only needs to include the above-described near-ultraviolet semiconductor light-emitting element 3, the fluorescent light-emitting unit 14 including a red phosphor and a blue phosphor, and other configurations are not particularly limited. Here, the near-ultraviolet semiconductor light-emitting element 3 and the fluorescent light-emitting portion 14 are usually arranged so that the phosphor is excited by the light emitted from the near-ultraviolet semiconductor light-emitting element 3 to generate light, and this light is extracted outside. It will be. When having such a structure, the near-ultraviolet semiconductor light-emitting element 3 and the phosphor described above are usually sealed and protected with a light-transmitting material (sealing material). Specifically, the sealing material is included in the fluorescent light emitting portion 14 to disperse the fluorescent material to form a light emitting portion, or to bond the near ultraviolet semiconductor light emitting element 3, the fluorescent material, and the substrate 2 together. It is adopted for the purpose.

  Therefore, in this embodiment, an inorganic material having a siloxane bond (hereinafter referred to as a silicone material) can be adopted as a sealing material for the fluorescent light emitting portions 14A and 14B. As the silicone material, for example, a silicone material synthesized by the manufacturing method described below can be used. Momentive Performance Materials Japan G.K., both ends silanol dimethyl silicone oil XC96-723 385g, methyltrimethoxysilane 10.28g and zirconium tetraacetylacetonate powder 0.791g as a catalyst, stirring blade Were weighed in a 500 ml three-necked Kolben equipped with a fractionating tube, a Dimroth condenser and a Liebig condenser, and stirred at room temperature for 15 minutes until the coarse particles of the catalyst were dissolved. Thereafter, the temperature of the reaction solution was raised to 100 ° C. to completely dissolve the catalyst, and initial hydrolysis was performed while stirring at 500 rpm for 30 minutes at 100 ° C. under total reflux.

  Subsequently, the distillate was connected to the Liebig condenser side, nitrogen was blown into the liquid with SV20, and methanol, water, and low-boiling silicon components of by-products were distilled off with nitrogen accompanying at 100 ° C. and 500 rpm for 1 hour. Stir. The polymerization reaction was continued for 5.5 hours while the temperature was further raised and maintained at 130 ° C. while blowing nitrogen into the liquid with SV20 to obtain a reaction liquid having a viscosity of 389 mPa · s. Here, “SV” is an abbreviation for “Space Velocity” and refers to the volume of blown volume per unit time. Therefore, SV20 refers to blowing in 20 times the volume of nitrogen per hour. Then, after stopping the blowing of nitrogen and once cooling the reaction solution to room temperature, the reaction solution was transferred to an eggplant type flask, and using a rotary evaporator, methanol and methanol remaining in a minute amount at 120 ° C. and 1 kPa for 20 minutes on an oil bath Water and a low boiling silicon component were distilled off, and a solventless silicone-based sealing material liquid having a viscosity of 584 mPa · s was obtained.

The near-ultraviolet semiconductor light emitting devices 3A and 3B are installed in the divided region portions 12A and 12B, and the red phosphor and the sealing material obtained as described above are placed in the divided region portion 12A, and the blue phosphor and the sealing material are sealed. The lighting device 8 is manufactured by enclosing the stop material in the divided region portion 12B. At this time, in addition to each phosphor and the sealing material, dry silica Aerosil (registered trademark) is added to each divided region portion as a thixotropic material for adjusting the viscosity thereof. At this time, the combination of the blue phosphor, the red phosphor, the thixo material, and the sealing material used in one package 1 is as shown in FIG. That is, the red phosphor used for the divided region portion 12A is 0.35 g, the blue phosphor used for the divided region portion 12B is 0.76 g, and the thixo and sealing materials used for both divided region portions are , 1.04 g and 8.30 g, respectively.

  FIG. 8A shows a light energy diagram of the irradiation light from the illumination device 8 configured as described above (the horizontal axis of FIG. 8A is the wavelength, and the vertical axis is the light energy). At this time, the duty ratio of the voltage applied to the near ultraviolet semiconductor light emitting elements 3A and 3B via the wirings 20A and 20B is 50:50. Here, the wavelength region of the irradiation light from the light emitting device 8 is 380 nm to 420 nm in the near ultraviolet region (EnUV), 420 nm to 510 nm in the blue region (EB), 510 nm to 580 nm in the green region (EG), and 580 nm to 680 nm. Divide into red area (ER). As shown in FIG. 8A, the light energy peak of the illumination device 8 also appears in the near-ultraviolet region, but this is due to the light directly emitted from the near-ultraviolet semiconductor light-emitting elements 3A and 3B, and is visible to humans. It can be seen that peaks appear in the blue region and the red region. As is clear from the comparison with FIG. 3, the peak of the light energy of the irradiation light from the illumination device 8 almost coincides with the peak of light absorption of chlorophyll of the plant, and the blue region (near 450 nm) And has a peak in the red region (near 650 nm). Therefore, the irradiation light from the illumination device 8 enables efficient plant growth.

  Furthermore, the illuminating device 8 includes fluorescent light containing red phosphors excited by near-ultraviolet light having four near-ultraviolet semiconductor light-emitting elements 3 as light sources in the two divided region portions 12A and 12B divided by the partition 11, respectively. A light emitting portion 14A and a fluorescent light emitting portion 14B including a blue phosphor are provided, and two divided region portions 12A and 12B are integrated in the reflector 10 by arranging the output light emission ports, that is, the divided opening portions 13A and 13B. Provided. The red light having a peak in the red region and the blue fluorescence having a peak in the blue region shown in FIG. 8A, which are the output lights from the fluorescent light emitting portions 14A and 14B, are respectively transmitted to the outside from the divided openings 13A and 13B. Emitted. Here, since the red fluorescence and the blue fluorescence emitted from the divided openings are obtained through the fluorescent light-emitting portion 14 including the phosphor, the output light from the near-ultraviolet semiconductor light-emitting elements 3A and 3B is sufficiently obtained. Scattered and emitted with a Lambertian distribution. Therefore, the irradiation light as the illumination device 8 is a combined light in which red fluorescence and blue fluorescence are uniformly synthesized, and the color separation between red and blue can be suppressed to a very low level.

  In this way, the red region light and the blue region light are respectively formed by red fluorescence and blue fluorescence by exciting the phosphor with a near-ultraviolet semiconductor light-emitting device, so that Red light and blue light necessary for growing can be irradiated evenly. That is, the illuminating device 8 makes it possible to efficiently distribute red and blue light necessary for growing chlorophyll of plants.

Further, in the irradiation light from the illumination device 8 having the light energy distribution shown in FIG. 8A, the ratio (area ratio) of the total light energy in each of the near ultraviolet region, the blue region, the green region, and the red region is converted. As shown in 8B. In addition, the light energy ratio of each area | region shown to FIG. 8B makes 100% the sum total of the light energy of four area | regions, a near-ultraviolet area | region, a blue area | region, a green area | region, and a red area | region. At this time, the light energy ratio in the near ultraviolet region is 7.9%, the light energy ratio in the blue region is 10.1%, the light energy ratio in the green region is 5.4%, and the light energy ratio in the red region is 76.6%. It is. As a result, the ratio of light energy in the four areas excluding the green area (hereinafter referred to as “growth area ratio”) is 95% of the total, and the light in the red area with respect to the light energy in the blue area. Energy ratio (
Hereinafter, it is referred to as “red ratio”. ) Is 7.6.

  As shown in FIG. 3, this growing area ratio means the ratio indicated by the energy of light in the area excluding the green area (that is, the red area, the blue area, and the near ultraviolet area) necessary for plant growth. Here, the near-ultraviolet region is included in the growth region ratio because light absorption does not reach a peak in the near-ultraviolet region, but there is chlorophyll that exhibits extremely high absorbance compared to the green region. (See FIG. 3). In the irradiation light from the illuminating device 8, it is preferable that this growth area | region ratio will be 95% or more.

  Moreover, about the red ratio, it is thought that the appropriate value changes according to the characteristic of the photosynthesis in a plant. In general, it is known that red light is effective for the photosynthesis of plants, and blue light is effective for adjusting the opening and closing of the stomata of plants. It is also known that part of blue light is also effective for photosynthesis. Therefore, in consideration of efficient plant growth, it is preferable to supply a necessary amount of light for pore adjustment while maintaining a large proportion of light used for photosynthesis. Therefore, it is preferable to adjust the red ratio according to the type of plant to be grown. In general, it has been empirically known that in many plants, the red ratio may be adjusted within a range of about 2 to 10.

  Here, the illuminating device 8 includes a divided region portion 12A that emits red fluorescence and a divided region portion 12B that emits blue fluorescence, and further includes a near-ultraviolet semiconductor light emitting element 3A provided in each divided region portion, Independent wirings 20A and 20B are connected to 3B. Therefore, it is possible to independently apply a voltage to the semiconductor light emitting element 3A and the semiconductor light emitting element 3B, thereby adjusting the red ratio. For example, the red ratio can be adjusted by adjusting the duty ratio of the rectangular supply voltage applied to the wirings 20A and 20B.

<Modification 1>
In the illumination device 8 shown in the above-described embodiment, a red phosphor is sealed in the divided region portion 12A, and a blue phosphor is sealed in the divided region portion 12B. However, as described above, since the ratio of the energy of red light is generally higher than the ratio of the energy of blue light, that is, the red ratio is often set to be relatively high for plant growth, the package 1 It is also preferable to increase the ratio of the red phosphor encapsulated in the divided region provided in the. Therefore, as shown in FIG. 9, in the divided region portion 12A, the fluorescent light emitting portion 14A is formed so as to contain the red phosphor as in the state shown in FIG. The fluorescent light emitting portion 15B may be formed so as to include both the fluorescent material and the blue fluorescent material. That is, the illuminating device 8 shown in FIG. 9 is an illuminating device which can set a red ratio higher than the illuminating device 8 shown in FIG.

<Modification 2>
In the above-described embodiment, two divided regions are formed in one package 1, and red light and blue light as fluorescence are emitted from each. Instead of such a configuration, one type of phosphor is enclosed in one package, a red package that emits red fluorescence and a blue package that emits blue fluorescence are prepared, and these packages are arranged in various forms. You may comprise the illuminating device 8 by this. At this time, it is preferable to consider, for example, that the red package and the blue package are alternately arranged so that the red fluorescence from the red package and the blue fluorescence from the blue package are well synthesized. In addition, the divided region portion may not be provided in one package, and the red phosphor and the blue phosphor may be mixed in the package.

<Modification 3>
Examples of other materials such as a red phosphor, a blue phosphor, and a sealing material that can be employed in the lighting device 8 according to the present invention are given below.

The red phosphor is composed of, for example, fractured particles having a red fracture surface, and emits light in the red region (Mg, Ca, Sr, Ba) ₂ Si ₅ N ₈ : europium activated alkaline earth represented by Eu. Silicon nitride-based phosphor, which is composed of growing particles having a substantially spherical shape as a regular crystal growth shape, and emits light in the red region (Y, La, Gd, Lu) ₂ O ₂ S: represented by Eu And europium activated rare earth oxychalcogenide phosphors.

  And a phosphor containing oxynitride and / or oxysulfide containing at least one element selected from the group consisting of Ti, Zr, Hf, Nb, Ta, W, and Mo, A phosphor containing an oxynitride having an alpha sialon structure in which some or all of the elements are substituted with Ga elements can also be used. These are phosphors containing oxynitride and / or oxysulfide.

Other red phosphors include Eu-activated oxysulfide phosphors such as (La, Y) ₂ O ₂ S: Eu, Y (V, P) O ₄ : Eu, Y ₂ O ₃ : Eu, etc. Eu-activated oxide phosphors of (Ba, Sr, Ca, Mg) ₂ SiO ₄ : Eu, Mn, (Ba, Mg) ₂ SiO ₄ : Eu, Mn such as Eu, Mn
Activated silicate phosphor, Eu activated sulfide phosphor such as (Ca, Sr) S: Eu, YAlO ₃ : Eu
Eu-activated aluminate phosphor such as LiY ₉ (SiO ₄ ) ₆ O ₂ : Eu, Ca ₂ Y ₈ (SiO ₄ ) ₆ O ₂ : Eu, (Sr, Ba, Ca) ₃ SiO ₅ : Eu, Eu-activated silicate phosphors such as Sr ₂ BaSiO ₅ : Eu, (Y, Gd) ₃ Al ₅ O ₁₂ : Ce, (Tb, Gd) ₃ Al ₅ O ₁₂ : Ce-activated aluminate fluorescence such as Ce Body, (Ca, Sr, Ba) ₂ Si ₅ N ₈ : Eu, (Mg, Ca, Sr, Ba)
Eu-activated nitride phosphors such as SiN ₂ : Eu, (Mg, Ca, Sr, Ba) AlSiN ₃ : Eu, Ce-activated nitride phosphors such as (Mg, Ca, Sr, Ba) AlSiN ₃ : Ce , (Sr, Ca, Ba, Mg) 10 (PO 4) 6 Cl 2: Eu, Eu such as Mn, Mn-activated halophosphate _{phosphor, Ba 3 MgSi 2 O 8:} Eu, Mn, (Ba, Sr , Ca, Mg) ₃ (Zn, Mg) Si ₂ O ₈ : Eu, Mn activated silicate phosphor such as Eu, Mn, 3.5Mn activated germane such as 3.5MgO · 0.5MgF ₂ · GeO ₂ : Mn Acid activated phosphor, Eu activated oxynitride phosphor such as Eu activated α sialon, (Gd, Y, Lu, La) ₂ O ₃ : Eu, Bi activated oxide phosphor such as Eu, Bi, ( Gd, Y
, Lu, La) ₂ O ₂ S: Eu, Bi-activated oxysulfide phosphors such as Eu and Bi, (Gd, Y, Lu, La) VO ₄ : Eu, Bi-activated vanadic acid such as Eu, Bi, etc. Salt phosphor, SrY ₂ S ₄ : Eu, Ce activated sulfide phosphor such as Eu, Ce, CaLa ₂ S ₄ : Ce activated sulfide phosphor such as Ce, (Ba, Sr, Ca) MgP ₂ O ₇ : Eu, Mn, (Sr, Ca, Ba, Mg, Zn) ₂ P ₂ O ₇
: Eu, Mn activated phosphor phosphor such as Eu, Mn, (Y, Lu) ₂ WO ₆ : Eu, Mo activated tungstate phosphor such as Eu, Mo, (Ba, Sr, Ca) _x Si _y N _z : Eu, Ce activated nitride phosphor such as Eu, Ce (where x, y, z are integers of 1 or more), (Ca, Sr, B)
a, Mg) ₁₀ (PO ₄ ) ₆ (F, Cl, Br, OH) ₂ : Eu, Mn-activated halophosphate phosphor such as Eu, Mn, ((Y, Lu, Gd, Tb) _{1-x sc x Ce y) 2 (Ca} , Mg) 1-r (Mg, Zn) can be used for _{2 + r Si zq GeqO 12+ δ} Ce -activated silicate phosphor such like.

  Further, as red phosphors, β-diketonates, β-diketones, aromatic carboxylic acids, red organic phosphors composed of rare earth element ion complexes having an anion such as Bronsted acid as a ligand, perylene pigments ( For example, dibenzo {[f, f ′]-4,4 ′, 7,7′-tetraphenyl} diindeno [1,2,3-cd: 1 ′, 2 ′, 3′-lm] perylene), anthraquinone series Pigment, lake pigment, azo pigment, quinacridone pigment, anthracene pigment, isoindoline pigment, isoindolinone pigment, phthalocyanine pigment, triphenylmethane basic dye, indanthrone pigment, indophenol It is also possible to use pigments, cyanine pigments, and dioxazine pigments.

Next, as the blue phosphor, a europium-activated barium magnesium aluminate system represented by BaMgAl ₁₀ O ₁₇ : Eu that is composed of growing particles having a substantially hexagonal shape as a regular crystal growth shape and emits light in a blue region. Europium activation represented by (Ca, Sr, Ba) ₅ (PO ₄ ) ₃ Cl: Eu, which is composed of phosphors and growing particles having a substantially spherical shape as a regular crystal growth shape, and emits light in the blue region. Calcium halophosphate-based phosphor, composed of growing particles having a substantially cubic shape as a regular crystal growth shape, and emits light in the blue region (Ca, Sr, Ba) ₂ B ₅ O ₉ Cl: Europium represented by Eu Activated alkaline earth chloroborate phosphor, composed of fractured particles having fractured surfaces, and emits light in the blue-green region (Sr, Ca, Ba) Al ₂ O ₄ : Euro or (Sr, Ca, Ba) ₄ Al ₁₄ O ₂₅ : Europium-activated alkaline earth aluminate phosphors represented by Eu.

In addition, as the blue phosphor, Sn-activated phosphate phosphors such as Sr ₂ P ₂ O ₇ : Sn, Sr ₄ Al ₁₄ O ₂₅ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, BaAl ₈ O ₁₃ : Eu-activated aluminate phosphors such as Eu, Ce-activated thiogallate phosphors such as SrGa ₂ S ₄ : Ce, CaGa ₂ S ₄ : Ce, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, Tb, Sm activated aluminate phosphor such as Eu, Tb, Sm, (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu, Mn activated aluminate phosphor such as Eu, Mn (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu, (Ba, Sr, Ca) ₅ (PO ₄ ) ₃ (Cl, F, Br, OH): Eu, Mn, Sb, etc. of Eu, Tb, Sm-activated halophosphate _{phosphor, BaAl 2 Si 2 O 8:} Eu, (Sr, B ) ₃ MgSi ₂ O _8: Eu-activated silicate phosphors such as _{Eu, Sr 2 P 2 O 7} : Eu , etc. E of
u-activated phosphate phosphor, sulfide phosphor such as ZnS: Ag, ZnS: Ag, Al, Y ₂ Si
O ₅ : Ce-activated silicate phosphor such as Ce, tungstate phosphor such as CaWO ₄ , (Ba,
_{Sr, Ca) BPO 5: Eu} , Mn, (Sr, Ca) 10 (PO 4) 6 · nB 2 O 3: Eu, 2SrO · 0.84P 2 O 5 · 0.16B 2 O 3: Eu such as Eu , Mn-activated borate phosphate _{phosphors, Sr 2 Si 3 O 8 ·} 2SrCl 2: it is also possible to use Eu Eu-activated halo silicate phosphor such like.

  In addition, as the blue phosphor, for example, naphthalic acid imide-based, benzoxazole-based, styryl-based, coumarin-based, pyrazoline-based, triazole-based compound fluorescent dyes, thulium complexes and other organic phosphors can be used. .

  Further, as the sealing material, usually, a thermoplastic resin, a thermosetting resin, a photocurable resin, and the like can be mentioned. The near-ultraviolet semiconductor light-emitting element 3 has a wavelength of output light in the near-ultraviolet region of 360 nm to 430 nm. Therefore, a resin having sufficient transparency and durability against the output light is preferable as the sealing material. Therefore, specific examples of the sealing material include (meth) acrylic resins such as poly (meth) methyl acrylate; styrene resins such as polystyrene and styrene-acrylonitrile copolymers; polycarbonate resins; polyester resins; phenoxy resins; Resin; Polyvinyl alcohol; Cellulose resins such as ethyl cellulose, cellulose acetate, cellulose acetate butyrate; Epoxy resin; Phenol resin; Silicone resin Further, an inorganic material such as a siloxane bond formed by solidifying a solution obtained by hydrolytic polymerization of a solution containing an inorganic material such as a metal alkoxide, ceramic precursor polymer or metal alkoxide by a sol-gel method, or a combination thereof. The inorganic material and glass which have can also be used.

  Among these, from the viewpoints of heat resistance, ultraviolet resistance (UV) resistance, etc., a solution containing a silicone resin, a metal alkoxide, a ceramic precursor polymer or a metal alkoxide, which is a silicon-containing compound, is hydrolytically polymerized by a sol-gel method. An inorganic material obtained by solidifying the solution or a combination thereof, for example, an inorganic material having a siloxane bond is preferable. In particular, a silicone material or a silicone resin (hereinafter sometimes referred to as “silicone material of the present invention”) having one or more of the following features (1) to (3), preferably all, is preferred.

(1) The solid Si-nuclear magnetic resonance (NMR) spectrum has at least one of the following peaks (i) and / or (ii).
(I) A peak whose peak top is in the region of chemical shift −40 ppm or more and 0 ppm or less, and whose peak half-value width is 0.3 ppm or more and 3.0 ppm or less.
(Ii) A peak whose peak top position is in a region where the chemical shift is −80 ppm or more and less than −40 ppm, and the half width of the peak is 0.3 ppm or more and 5.0 ppm or less.
(2) The silicon content is 20% by weight or more.
(3) The silanol content is 0.01% by weight or more and 10% by weight or less.

Here, as for the silicone-based material as the sealing agent, as described above, those having a silicon content of 20% by weight or more are preferable. The basic skeleton of the conventional silicone-based material is an organic resin such as an epoxy resin having carbon-carbon and carbon-oxygen bonds as the basic skeleton, whereas the basic skeleton of the silicone-based material of the present invention is glass (silicate). It is the same inorganic siloxane bond as glass). This silicone-based material having a siloxane bond has (I) a large bond energy and is difficult to be thermally decomposed or photodegraded, so that it has good light resistance, (II) is slightly electrically polarized, (III) chain The degree of freedom of the structure is large and a flexible structure is possible, and it can freely rotate around the center of the siloxane chain. (IV) High oxidation degree, no further oxidation, (V) High electrical insulation, etc. It has excellent characteristics.

  Because of these characteristics, a silicone-based material formed with a skeleton in which siloxane bonds are three-dimensionally bonded with a high degree of crosslinking is close to an inorganic material such as glass or rock, and becomes a protective film rich in heat resistance and light resistance. Can understand. In particular, a silicone-based material having a methyl group as a substituent has no absorption in the ultraviolet region, so that photolysis hardly occurs and has excellent light resistance.

As described above, the silicon content of the silicone-based material of the present invention is 20% by weight or more, preferably 25% by weight or more, and more preferably 30% by weight or more. On the other hand, the upper limit is usually in the range of 47% by weight or less because the silicon content of the glass composed solely of SiO ₂ is 47% by weight.

It is a figure which shows schematic structure of the production apparatus which grows a plant. It is a top view of the production base which comprises the production apparatus shown in FIG. It is a top view of the illumination base which comprises the illuminating device shown in FIG. It is a figure which shows transition of the light absorption by the chlorophyll of a plant. It is a perspective view of schematic structure of the illuminating device which illuminates a plant in the production apparatus shown in FIG. It is a figure which shows the mounting state of the wiring which supplies electric power to the near-ultraviolet semiconductor light-emitting device in the package shown to FIG. 4A. It is sectional drawing of the semiconductor light-emitting device shown to FIG. 1A. It is a figure which shows the connection relation of the near-ultraviolet semiconductor light-emitting device and a board | substrate in the semiconductor light-emitting device shown to FIG. 1A. It is a figure which shows the usage-amount of the red fluorescent substance, blue fluorescent substance, thixo material, and sealing material which are used in the illuminating device shown to FIG. 4A. It is a light energy figure of the irradiation light by the illuminating device comprised with the material shown in FIG. It is a figure which shows the ratio of the light energy of a near ultraviolet region, a blue region, a green region, and a red region in the light energy diagram shown to FIG. 8A. It is a figure which shows another form of the fluorescence light emission part formed in the division area part provided in the package.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Package 2 ... Substrate 3, 3A, 3B ... Near ultraviolet semiconductor light emitting element 8 ... Illumination device 10 ... Reflector 11 ... Partition 12, 12A, 12B ··· Division region portion 13 ··· Opening portions 13A and 13B ··· Division aperture portions 14 and 14A and 14B ··· Fluorescent light emitting portions 20 and 20A and 20B ··· Wirings 20C and 20D ... Pair wiring 40 ... Production equipment 41 ... Lighting base 42 ... Production base 43 ... Support pole 44 ... Solar cell 45 ... Battery

Claims (6)

A lighting device that supplies light necessary for plant growth,
A semiconductor light emitting device having a light emitting region in the near ultraviolet region or in the ultraviolet region, and a red phosphor that is excited by light emitted from the semiconductor light emitting device to fluoresce red light, and at least from the red phosphor to the outside A first fluorescent light emitting section for emitting red light;
A semiconductor light emitting device having a light emitting region in the near ultraviolet region or in the ultraviolet region, and a blue phosphor that is excited by light emitted from the semiconductor light emitting device to fluoresce blue light, and at least from the blue phosphor to the outside A second fluorescent light emitting unit for emitting blue light;
A semiconductor light emitting element that the first fluorescent light emitting unit has, and a power supply unit that supplies power to each of the semiconductor light emitting elements that the second fluorescent light emitting unit has,
The red light emitted from the first fluorescent light emitting unit and the blue light emitted from the second fluorescent light emitting unit are combined, and the combined light is irradiated to the plant.
Illumination device for direct growth. By the power supply of the power supply unit, the ratio of the energy of red light emitted from the first fluorescent light emitting unit to the energy of blue light emitted from the second fluorescent light emitting unit is variably controlled.
The lighting device for plant cultivation according to claim 1. The energy ratio is controlled in the range of 2 to 10.
The lighting device for plant cultivation according to claim 2. Of the energy of the light irradiated to the plant by the first fluorescent light emitting unit and the second fluorescent light emitting unit, the region of red light by the first fluorescent light emitting unit from the region of near ultraviolet light or ultraviolet light by the semiconductor light emitting element Sum of the energy of red light by the first fluorescent light emitting portion, the energy of blue light by the second fluorescent light emitting portion, and the energy of near ultraviolet light or ultraviolet light by the semiconductor light emitting device with respect to the total light energy up to The proportion of energy is 95% or more,
The lighting apparatus for plant cultivation as described in any one of Claims 1-3. A package that opens in the emission direction of the illumination device, further comprising a package in which the interior of the package is divided into a plurality of divided regions so as to include a part of the opening, respectively,
The first fluorescent light emitting portion is provided in one divided region portion in the package, and the second fluorescent light emitting portion is provided in another divided region portion different from the one divided region in the package. ,
The lighting device for plant cultivation according to any one of claims 1 to 4. A package that opens in the emission direction of the illumination device, further comprising a package in which the interior of the package is divided into a plurality of divided regions so as to include a part of the opening, respectively,
In two of the plurality of divided region portions, one divided region portion and the other divided region portion, the second fluorescent light emitting portion is provided only in the one divided region portion, and the first fluorescent light emitting portion is Provided in one divided region portion and the other divided region portion,
The lighting device for plant cultivation according to any one of claims 1 to 4.

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