JP2010004030A - Polyimide metal laminate and solar cell - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a flexible CIS based solar cell having high conversion efficiency. <P>SOLUTION: A metal layer formed earlier on a laminate where metal layers are formed on the opposite sides of a polyimide film is used as an electrode, and a metal layer formed later is used as a protective layer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a polyimide metal laminate used for the production of CIS solar cells. Moreover, this invention relates to the CIS type solar cell which uses this laminated body and has high conversion efficiency.

In recent years, solar cells using a chalcopyrite structure semiconductor layer such as CuInSe ₂ or Cu (In, Ga) Se _{2 in} which Ga is dissolved in the solar cell (CIS solar cells) have attracted attention as solar cells with high photoelectric conversion efficiency. Has been. A CIS solar cell generally has a configuration in which a back electrode layer is provided on a substrate, and a chalcopyrite structure semiconductor layer as a light absorption layer, a buffer layer, a transparent electrode layer, and an extraction electrode are provided thereon.

  Conventionally, glass (soda lime glass) is used as a substrate of a CIS solar cell, and Mo is used as a back electrode provided on the substrate. Furthermore, a CIS solar cell using a flexible film as a substrate has also been proposed (Patent Document 1, etc.). A solar cell using a flexible substrate may have a wider application range than a solar cell using a conventional glass substrate because of its flexibility and light weight. Another advantage of using a flexible substrate is that a solar cell can be manufactured by a roll-to-roll method that is excellent in mass productivity.

  However, CIS solar cells using a flexible substrate, such as a polyimide substrate, tend to have lower conversion efficiency than those using a glass substrate. In order to form a high-quality CIS-based semiconductor thin film with few defects, it is necessary to perform heat treatment at a high temperature of 450 ° C. or higher, preferably 500 ° C. or higher. This is because the temperature is about ° C. and further heating is difficult.

  As a method of manufacturing a CIS solar cell having a high conversion efficiency using a polyimide substrate, Patent Document 2 discloses that an electrode film is formed on a polyimide substrate and then above the electrode film (that is, directly or indirectly). After a thin film containing Cu and In and / or Ga and Se and / or S is formed on the electrode film, the thin film is rapidly heated to 450 ° C. or higher, more preferably 500 ° C. to 600 ° C. Method of forming a chalcopyrite structure semiconductor film by holding for 2 seconds to 300 seconds, and forming an electrode film on the polyimide substrate, and then forming a thin film containing Cu and In and / or Ga above the electrode film Then, the thin film is held in an atmosphere containing Se and / or S at a temperature of 450 ° C. or higher, more preferably 500 ° C. to 600 ° C. for 10 seconds to 300 seconds after rapid temperature increase. A method of forming a chalcopyrite structure semiconductor film is disclosed by Rukoto. In this manufacturing method, the step of forming a thin film that is a precursor of a semiconductor film and the step of heat-treating the precursor thin film are separated, and the temperature of the precursor thin film is rapidly increased by heating and crystal growth. By keeping at a high temperature of 500 ° C. or higher for a short time, it is possible to obtain a chalcopyrite structure semiconductor thin film suitable as a light absorption layer of a solar cell. However, since heat treatment at a high temperature is necessary for a short time, even with this method, the polyimide substrate may be warped or the electrode film or the semiconductor film may be cracked.

  In Patent Document 3, in a solar cell in which a laminate having at least an electrode layer and a chalcopyrite structure semiconductor thin film is formed on a substrate film, the substrate film comprises an aromatic diamine and an aromatic tetracarboxylic acid anhydride. It is a polyimide film formed by polycondensation, and has a film thickness of 3 to 200 μm, an average linear expansion coefficient up to 300 ° C. of 1 to 10 ppm / ° C., and a tensile strength at break in the longitudinal direction of 300 MPa or more. A battery is disclosed, and a polyimide benzoxazole film formed by polycondensation of an aromatic diamine having a benzoxazole structure and an aromatic tetracarboxylic acid anhydride is described as a preferred substrate film. In Example 8, a CIS solar cell using a polyimide film obtained by thermal imidization from 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and paraphenylenediamine as a substrate was also used. Are listed. However, the CIS solar cell described in Patent Document 3 also takes into consideration the dimensional change of the film in the temperature rising process up to 300 ° C., but the dimensional change in the further high temperature range (up to 500 ° C.) and the temperature lowering process. May not have sufficient characteristics.

International Publication No. 98/50962 Pamphlet JP 2003-179238 A JP 2007-317834 A

  An object of the present invention is a polyimide metal laminate capable of realizing a CIS solar cell having flexibility and high conversion efficiency, specifically, a polyimide having extremely high heat resistance that can withstand heat treatment at a high temperature of 500 ° C. or higher. It is to provide a metal laminate.

  The present invention relates to the following matters.

1. It has a polyimide film and a metal layer to be an electrode on the polyimide film, and is a polyimide metal laminate used for manufacturing a CIS solar cell having a chalcopyrite structure semiconductor layer,
On the surface on the opposite side of the surface on which the metal layer to be the electrode is formed, further has a metal layer to be a protective layer,
The laminate, wherein the metal layer to be the electrode is formed before the formation of the metal layer to be the protective layer.

2. A polyimide precursor solution self-supporting film prepared by casting and heating a polyimide precursor solution obtained from an aromatic tetracarboxylic acid component and an aromatic diamine component on a support, and heating the polyimide film. Is a polyimide film manufactured by imidizing,
2. The laminate according to 1 above, wherein the metal layer serving as the electrode is formed on a surface (B surface) on the side in contact with the support of the film during the production of the self-supporting film.

  3. The polyimide film is obtained from an aromatic tetracarboxylic acid component mainly composed of 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and an aromatic diamine component mainly composed of paraphenylenediamine. 3. The laminate according to the above 1 or 2, which is a polyimide film to be produced.

  4). The laminated body in any one of said 1-3 whose metal layer used as the said electrode is a layer containing molybdenum.

  5. The laminated body in any one of said 1-4 whose metal layer used as the said protective layer is a layer containing molybdenum.

  6). The laminate according to any one of 1 to 5 above, wherein the metal layer to be the electrode and the metal layer to be the protective layer are formed by sputtering or vapor deposition.

  7). The CIS type solar cell containing the laminated body in any one of said 1-6.

  8). Among the metal layers formed on both sides of the polyimide film of the laminate according to any one of 1 to 6, a chalcopyrite structure semiconductor layer is formed on the previously formed metal layer. A method for manufacturing a solar cell.

  As described above, in order to produce a chalcopyrite structure semiconductor layer with excellent characteristics and to produce a CIS solar cell with high conversion efficiency, a metal layer and an semiconductor layer (or a precursor thereof) on the substrate are used. After forming a certain thin film layer), it is necessary to hold it at a high temperature of 500 ° C. or more for 10 seconds or more. Therefore, it is necessary to use a polyimide film that can withstand this high-temperature heat treatment as a substrate, but in addition, it is possible to withstand this high-temperature heat treatment in the form of a laminate in which a metal layer serving as an electrode is formed on the polyimide film. is necessary.

  In the case of a laminate in which metal layers are formed on both sides of a polyimide film, the metal layer formed earlier has fewer cracks in the metal layer generated by heat treatment at a high temperature of 500 ° C. or higher than the metal layer formed later. Therefore, the metal layer formed earlier is used as an electrode, and a chalcopyrite structure semiconductor layer, a transparent electrode, etc. are provided thereon to form a CIS solar cell, whereby the metal layer formed later is used as an electrode. Moreover, generation | occurrence | production of the crack of an electrode layer or a semiconductor layer, the peeling from a board | substrate can be suppressed, and the high quality CIS type solar cell with high conversion efficiency can be manufactured.

  The reason why the metal layer formed earlier is less likely to generate cracks is not clear, but one reason is the influence of decomposition and volatile matter generated in the metal layer forming step. The metal layer can be formed by a sputtering method or a vapor deposition method. However, since the energy given to the film surface is large, the residual solvent in the polyimide film may be volatilized or partly decomposed and volatilized. When the metal layer is first formed, this volatile component diffuses in the polyimide film and is released to the surface opposite to the metal layer forming surface. On the other hand, when a metal layer is formed later, a large number of defects may be generated in the metal layer, such as selective concentration of volatile components on the metal layer forming surface due to the barrier effect of the previously formed metal layer. . It is considered that the film quality of the metal layer deteriorates due to these defects, and defects such as cracks may occur.

  Such a difference in defects such as occurrence of metal layer cracks due to the formation order is observed in a high-temperature heat treatment such as a heat treatment for manufacturing a CIS solar cell, and the difference is not so much seen in a low-temperature heat treatment. . When heat treatment is performed at a low temperature, no problem occurs even if a metal layer formed later is used.

FIG. 1 is a diagram showing a first step of an example of a method for producing a solar cell of the present invention. FIG. 2 is a diagram showing a second step of an example of the method for manufacturing a solar cell of the present invention.

  As described above, in order to produce a CIS solar cell with high conversion efficiency, it is necessary to perform heat treatment at a high temperature of 500 ° C. or higher, and therefore, it is necessary to use a polyimide film that can withstand this high temperature heat treatment as a substrate. .

  The polyimide film used in the present invention has a dimensional change rate from 25 ° C. to 500 ° C., preferably a maximum value and a minimum value of a dimensional change rate in the MD direction and a dimensional change rate in the TD direction. It is preferable to be within a range of −0.3% to + 0.6%, further −0.2% to + 0.6%, particularly 0% to + 0.6% on the basis.

  Here, the rate of dimensional change from 25 ° C. to 500 ° C. means that the polyimide film to be measured is subjected to a temperature rising process from 25 ° C. to 500 ° C. under the following conditions by a thermomechanical analyzer (TMA). At each temperature in the temperature lowering process from 500 ° C. to 25 ° C., initial values (before temperature increase) in the MD direction (continuous film forming direction; film longitudinal direction) and TD direction (direction perpendicular to the MD direction; film width direction) Dimensional change rate with respect to (dimension at 25 ° C.) was measured, and the maximum value and the minimum value were obtained.

Measurement mode: tensile mode, load 2g,
Sample length: 15 mm,
Sample width: 4 mm
Temperature rising start temperature: 25 ° C.
Temperature rise end temperature: 500 ° C. (no holding time at 500 ° C.),
Temperature drop end temperature: 25 ° C
Temperature increase / decrease rate: 20 ° C./min,
Measurement atmosphere: nitrogen.

  That is, the dimensional change rate from 25 ° C. to 500 ° C. is within the range of −0.3% to + 0.6% means that the temperature is lowered from 25 ° C. to 500 ° C. and the temperature is lowered from 500 ° C. to 25 ° C. Sometimes, the dimensional change rate in the MD direction and the dimensional change rate in the TD direction are always in the range of -0.3% to + 0.6%.

  The dimensional change rate is defined by the following formula (1).

  However, for the maximum value (%) of the dimensional change rate, the maximum dimension obtained in the temperature raising process and the temperature lowering process is L in Equation (1), and the minimum value (%) of the dimensional change rate is the minimum value obtained in the temperature lowering process. The dimension can be determined as L in equation (1).

Dimensional change rate (%) = (L−L ₀ ) / L ₀ × 100 (1)
(However, L is the length at the measurement temperature, and L ₀ is the length at 25 ° C. before the temperature rise.)

  In both the temperature raising process from 25 ° C. to 500 ° C. and the subsequent temperature lowering process, the dimensional change rate is −0 .0 mm based on the initial dimension (before temperature raising) at 25 ° C. for both MD and TD. By using a polyimide film within the range of 3% to + 0.6% as a substrate, high quality with high conversion efficiency by preventing cracks in the metal layer and semiconductor layer that become electrodes and peeling from the substrate The CIS solar cell can be manufactured.

  From the viewpoint of heat resistance, the polyimide film used as the substrate preferably has a weight reduction rate of 1% by mass or less after heat treatment at 500 ° C. for 20 minutes, more preferably 0.5% by mass or less.

  Here, the weight loss rate after heat treatment at 500 ° C. for 20 minutes is as follows: the polyimide film to be measured was heated from room temperature to 500 ° C. at a rate of 50 ° C./minute, reached 500 ° C., and then 20% at 500 ° C. The weight of the polyimide film after being held for a minute was measured and obtained from the following formula (2).

Weight reduction rate (%) = (W ₀ −W) / W ₀ × 100 (2)
(W ₀ is the weight immediately after heating at 500 ° C., and W is the weight after holding at 500 ° C. for 20 minutes.)

  Since volatile components such as moisture and residual solvent are volatilized before reaching 500 ° C., this weight reduction rate is an indicator of the decomposition and thermal degradation of the polyimide, and the larger the value, the greater the degradation.

  A polyimide film having high dimensional stability even in a heat treatment at a high temperature of 500 ° C. or higher is obtained by polymerizing a polyimide film obtained by polymerizing an aromatic tetracarboxylic acid component and an aromatic diamine component. 500 ° C or higher, preferably 500 ° C or higher and 550 ° C or lower, more preferably 500 ° C or higher and 540 ° C or lower, more preferably 500 ° C or higher and 530 ° C or lower, and particularly preferably 500 ° C or higher and 520 ° C or lower. Can be obtained by heat treatment for 30 seconds to 10 minutes, more preferably for 1 minute to 5 minutes.

  The polyimide film to be used is not particularly limited, but is not decomposed or deteriorated even when heat-treated at a high temperature of 500 ° C. or higher, or has extremely low decomposition and deterioration, and has high heat resistance. Examples thereof include a polyimide film obtained by using 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and paraphenylenediamine as main components.

  Also, if the linear expansion coefficient of the substrate is significantly different from the linear expansion coefficient of the metal layer (usually Mo layer or W layer) that becomes the electrode or the linear expansion coefficient of the chalcopyrite structure semiconductor layer, the metal layer or semiconductor layer that becomes the electrode Cracks are easily generated, and the metal layer or semiconductor layer that becomes the electrode is easily peeled off from the substrate. Therefore, the polyimide film used as the substrate of the CIS solar cell preferably has a linear expansion coefficient of 25 to 500 ° C. of 1 to 10 ppm / ° C. for both MD and TD.

  Here, the linear expansion coefficient of 25 to 500 ° C. is obtained by the following equation (3) from the dimensional change in the MD direction and the TD direction in the temperature rising process in the measurement of the dimensional change rate from 25 ° C. to 500 ° C. Average linear expansion coefficient.

Linear expansion coefficient (ppm / ° C.) = (L−L ₀ ) / {L ₀ × (T−T ₀ )} × 10 ⁶ (3)
(However, L is the length at 500 ° C., L ₀ is the length at 25 ° C. before the temperature rise, T is 500 ° C., and T ₀ is 25 ° C.)

  By producing polyimide by chemical imidation with 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and paraphenylenediamine as the main components, it decomposes and deteriorates even when heat-treated at a high temperature of 500 ° C or higher. Or a polyimide having extremely low decomposition and deterioration, high heat resistance, and a linear expansion coefficient within the above range. Further, after stretching a self-supporting film of a polyimide precursor solution obtained by using 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and paraphenylenediamine as main components, or while stretching, a thermal imide Even if it manufactures a polyimide, it can obtain the polyimide film which has a linear expansion coefficient of said range.

  In the measurement of the dimensional change rate and the weight reduction rate, all the temperatures are measured on the surface of the polyimide film.

  Furthermore, it is preferable that the polyimide film used as a substrate of a CIS solar cell has a tensile strength at break of 300 MPa or more.

  Such a polyimide film is prepared by reacting an aromatic tetracarboxylic acid component and an aromatic diamine component to synthesize a polyimide precursor (polyamic acid), and casting the resulting polyimide precursor solution onto a support. It can be manufactured by heating to produce a self-supporting film of a polyimide precursor solution and imidizing this self-supporting film. The imidization may be performed by thermal imidization or chemical imidization.

  A polyimide film can be manufactured by thermal imidation as follows, for example.

  First, a self-supporting film of a polyimide precursor solution is manufactured. If necessary, the polyimide precursor solution self-supporting film is cast onto the support after adding an imidization catalyst, an organic phosphorus compound and inorganic fine particles to the organic solvent solution of the polyimide precursor that gives the polyimide, It is manufactured by heating to the extent that it is self-supporting (meaning the stage before the normal curing process).

  As a polyimide precursor, what is manufactured from aromatic tetracarboxylic dianhydride and aromatic diamine is preferable.

  Among them, an aromatic tetracarboxylic acid component mainly composed of 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride (hereinafter sometimes simply referred to as s-BPDA), and paraphenylenediamine ( Hereinafter, a polyimide precursor produced from an aromatic diamine component whose main component is sometimes simply abbreviated as PPD) is preferred. Specifically, an aromatic tetracarboxylic acid component containing s-BPDA of 75 mol% or more, more preferably 80 mol% or more, particularly preferably 90 mol% or more, and further preferably 95 mol% or more is preferable, and PPD is 75 or more. An aromatic diamine component containing at least mol%, more preferably at least 80 mol%, particularly preferably at least 90 mol%, still more preferably at least 95 mol% is preferred.

  Furthermore, other tetracarboxylic acids and diamines can be used as long as the characteristics of the present invention are not impaired.

  In the present invention, aromatic tetracarboxylic acid components that can be used in combination with 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride include pyromellitic dianhydride, 2,3 ′, 3,4 ′ -Biphenyltetracarboxylic dianhydride, 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride, 2,2', 3,3'-benzophenone tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, Bis (2,3-dicarboxyphenyl) ether dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, , 2, 5, Naphthalenetetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) -1,1,1,3,3,3-hexafluoropropane dianhydride, 2,2-bis (2 , 3-dicarboxyphenyl) -1,1,1,3,3,3-hexafluoropropane dianhydride. Examples of aromatic diamine components that can be used in combination with paraphenylenediamine include metaphenylenediamine, 2,4-diaminotoluene, 2,6-diaminotoluene, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-dimethyl-4,4′-diaminobiphenyl, 2,2′-dimethyl-4,4′-diaminobiphenyl, 2,2′-bis (trifluoromethyl)- 4,4′-diaminobiphenyl, 4,4′-diaminobenzophenone, 3,3′-diaminobenzophenone, 4,4′-bis (4-aminophenyl) sulfide, 4,4′-diaminodiphenylsulfone, 4,4 '-Diaminobenzanilide, 1,4-bis (4-aminophenoxy) benzene, 1,3- (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 4,4′-bis (4-aminophenoxy) biphenyl, 4,4′-bis (3-aminophenoxy) biphenyl, 2,2-bis (4-aminophenoxyphenyl) propane, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, 2,2-bis [4- (4-Aminophenoxy) phenyl] hexafluoropropane and the like, and particularly preferred is a diamine having one or two benzene nuclei.

  The synthesis of the polyimide precursor is achieved by random polymerization or block polymerization of approximately equimolar aromatic tetracarboxylic dianhydride and aromatic diamine in an organic solvent. May also be mixed with the reaction conditions was keep two or more polyimide precursors in which either of these two components is excessive, the respective polyimide precursor solution together. The polyimide precursor solution thus obtained can be used for the production of a self-supporting film as it is or after removing or adding a solvent if necessary.

  Examples of the organic solvent for the polyimide precursor solution include N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, N, N-diethylacetamide and the like. These organic solvents may be used alone or in combination of two or more.

  If necessary, an imidization catalyst, an organic phosphorus-containing compound, inorganic fine particles, and the like may be added to the polyimide precursor solution.

  Examples of the imidization catalyst include a substituted or unsubstituted nitrogen-containing heterocyclic compound, an N-oxide compound of the nitrogen-containing heterocyclic compound, a substituted or unsubstituted amino acid compound, an aromatic hydrocarbon compound having a hydroxyl group, or an aromatic heterocyclic compound. Cyclic compounds such as 1,2-dimethylimidazole, N-methylimidazole, N-benzyl-2-methylimidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole, 5-methylbenzimidazole and the like. Benzimidazoles such as alkylimidazole and N-benzyl-2-methylimidazole, isoquinoline, 3,5-dimethylpyridine, 3,4-dimethylpyridine, 2,5-dimethylpyridine, 2,4-dimethylpyridine, 4-n- Preferred are substituted pyridines such as propylpyridine It can be used for. The amount of the imidization catalyst used is preferably about 0.01-2 times equivalent, particularly about 0.02-1 times equivalent to the amic acid unit of the polyamic acid. By using an imidization catalyst, properties of the resulting polyimide film, particularly elongation and end resistance, may be improved.

  Examples of the organic phosphorus-containing compounds include monocaproyl phosphate, monooctyl phosphate, monolauryl phosphate, monomyristyl phosphate, monocetyl phosphate, monostearyl phosphate, triethylene glycol monotridecyl Monophosphate of ether, monophosphate of tetraethylene glycol monolauryl ether, monophosphate of diethylene glycol monostearyl ether, dicaproyl phosphate, dioctyl phosphate, dicapryl phosphate, dilauryl phosphate, dimyristyl phosphate, Dicetyl phosphate, distearyl phosphate, diethylene phosphate of tetraethylene glycol mononeopentyl ether, triethyl Diphosphate of glycol mono tridecyl ether, diphosphate of tetraethyleneglycol monolauryl ether, and phosphoric acid esters such as diphosphate esters of diethylene glycol monostearyl ether, amine salts of these phosphates. As amine, ammonia, monomethylamine, monoethylamine, monopropylamine, monobutylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, monoethanolamine, diethanolamine, triethanolamine Etc.

  Inorganic fine particles include fine particle titanium dioxide powder, silicon dioxide (silica) powder, magnesium oxide powder, aluminum oxide (alumina) powder, inorganic oxide powder such as zinc oxide powder, fine particle silicon nitride powder, and titanium nitride powder. Inorganic nitride powder such as silicon carbide powder, inorganic carbide powder such as silicon carbide powder, and inorganic salt powder such as particulate calcium carbonate powder, calcium sulfate powder, and barium sulfate powder. These inorganic fine particles may be used in combination of two or more. In order to uniformly disperse these inorganic fine particles, a means known per se can be applied.

  The self-supporting film of the polyimide precursor solution is a support of the polyimide precursor organic solvent solution as described above or a polyimide precursor solution composition in which an imidization catalyst, an organic phosphorus-containing compound, inorganic fine particles, and the like are added. It is manufactured by heating to such an extent that it is cast onto the substrate and becomes self-supporting (meaning a stage prior to a normal curing step), for example, can be peeled off from the support.

  The polyimide precursor solution preferably contains about 10 to 30% by mass of the polyimide precursor. Moreover, as a polyimide precursor solution, the thing whose polymer concentration is about 8-25 mass% is preferable.

  The heating temperature and heating time at this time can be determined as appropriate. For example, the heating may be performed at a temperature of 100 to 180 ° C. for about 3 to 60 minutes.

  As the support, it is preferable to use a smooth base material, for example, a stainless steel substrate, a stainless steel belt, or the like. For continuous production, an endless base material such as an endless belt is preferable.

  The self-supporting film has a weight loss on heating in the range of 20 to 50% by weight, a weight loss on heating in the range of 20 to 50% by weight, and an imidization ratio in the range of 8 to 55%. The mechanical properties of the support film are sufficient, which is preferable. In addition, when a coupling agent solution is applied to the upper surface of the self-supporting film, it becomes easy to apply the coupling agent solution cleanly, and the polyimide film obtained after imidization is foamed, cracked, crazed, cracked, cracked. This is preferable because occurrence of cracks or the like is not observed.

  The heating loss of the self-supporting film is a value obtained from the following formula from the mass W1 of the self-supporting film and the mass W2 of the cured film.

Heat loss (mass%) = {(W1-W2) / W1} × 100
Further, the imidization rate of the above self-supporting film can be measured by IR (ATR), and the imidization rate can be calculated using the ratio of the vibration band peak area or height between the film and the fully cured product. it can. As the vibration band peak, a symmetric stretching vibration band of an imidecarbonyl group, a benzene ring skeleton stretching vibration band, or the like is used. Further, regarding the imidization rate measurement, there is also a method using a Karl Fischer moisture meter described in JP-A-9-316199.

  In this invention, you may apply | coat the solution of surface treating agents, such as a coupling agent and a chelating agent, to the single side | surface or both surfaces of the self-supporting film obtained in this way as needed.

  As surface treatment agents, various coupling agents such as silane coupling agents, borane coupling agents, aluminum coupling agents, aluminum chelating agents, titanate coupling agents, iron coupling agents, copper coupling agents, and chelating agents. Examples thereof include a treatment agent that improves adhesiveness and adhesion of the agent. In particular, as a surface treatment agent, an excellent effect is obtained when a coupling agent such as a silane coupling agent is used.

  Examples of silane coupling agents include epoxy silanes such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and vinyltrichloro. Silane, vinyltris (β-methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane and other vinylsilane systems, γ-methacryloxypropyltrimethoxysilane and other acrylic silane systems, N-β- (aminoethyl) -γ- Aminosilanes such as aminopropyltrimethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercapto Propyltrime Kishishiran, .gamma.-chloropropyl trimethoxy silane and the like. Further, titanate coupling agents include isopropyl triisostearoyl titanate, isopropyl tridecylbenzenesulfonyl titanate, isopropyl tris (dioctylpyrophosphate) titanate, tetraisopropylbis (dioctyl phosphite) titanate, tetra (2,2-diallyloxy) Methyl-1-butyl) bis (di-tridecyl) phosphite titanate, bis (dioctylpyrophosphate) oxyacetate titanate, bis (dioctylpyrophosphate) ethylene titanate, isopropyltrioctanoyl titanate, isopropyltricumylphenyl titanate, etc. .

  As coupling agents, silane coupling agents, especially γ-aminopropyl-triethoxysilane, N-β- (aminoethyl) -γ-aminopropyl-triethoxysilane, N- (aminocarbonyl) -γ-aminopropyl Such as triethoxysilane, N- [β- (phenylamino) -ethyl] -γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, etc. Aminosilane coupling agents are preferred, and among them, N-phenyl-γ-aminopropyltrimethoxysilane is particularly preferred.

  Examples of the solvent for the solution of the surface treatment agent such as a coupling agent and a chelating agent include the same organic solvent as the polyimide precursor solution (the solvent contained in the self-supporting film). The organic solvent is preferably a solvent that is compatible with the polyimide precursor solution, and is preferably the same as the organic solvent of the polyimide precursor solution. The organic solvent may be a mixture of two or more.

  The organic solvent solution of the surface treatment agent such as a coupling agent or a chelating agent has a surface treatment agent content of 0.5% by mass or more, more preferably 1 to 100% by mass, particularly preferably 3 to 60% by mass, What is preferably 5 to 55% by mass is preferable. The water content is preferably 20% by mass or less, more preferably 10% by mass or less, and particularly preferably 5% by mass or less. The rotational viscosity (solution viscosity measured by a rotational viscometer at a measurement temperature of 25 ° C.) of the organic solvent solution of the surface treatment agent is preferably 0.8 to 50000 centipoise.

  As the organic solvent solution of the surface treatment agent, the surface treatment agent is particularly uniformly dissolved in the amide solvent at a concentration of 0.5% by mass or more, particularly preferably 1 to 60% by mass, and more preferably 3 to 55% by mass. The low viscosity (especially rotational viscosity 0.8-5000 centipoise) is preferable.

The coating amount of the surface treatment agent solution may be appropriately determined, for example, preferably 1 to 50 g / ^{m 2,} more preferably ^{2~30g / m 2, 3~20g / m} 2 is particularly preferred. The amount applied may be the same on both sides or different.

  The surface treatment agent solution can be applied by a known method, for example, gravure coating method, spin coating method, silk screen method, dip coating method, spray coating method, bar coating method, knife coating method, roll coating method. And publicly known coating methods such as blade coating and die coating.

  In the present invention, the self-supporting film coated with the surface treating agent solution is then heated and imidized as necessary to obtain a polyimide film.

  In the heat treatment, it is appropriate to first gradually perform imidization of the polymer and evaporation / removal of the solvent at a temperature of about 100 to 400 ° C. for about 0.05 to 5 hours, particularly 0.1 to 3 hours. In particular, this heat treatment is a stepwise primary heat treatment at a relatively low temperature of about 100-170 ° C. for about 0.5-30 minutes, and then at a temperature of 170-220 ° C. for about 0.5-30 minutes. It is preferable to perform the second heat treatment, and then the third heat treatment at a high temperature of 220 to 400 ° C. for about 0.5 to 30 minutes. If necessary, the fourth high-temperature heat treatment may be performed at a high temperature of 400 to 550 ° C.

  Also, in a curing furnace, fix at least the direction perpendicular to the longitudinal direction of the long solidified film, that is, both end edges in the width direction of the film with a pin tenter, clip, frame, etc., and expand or contract in the width direction as necessary. It is preferable to perform heat treatment.

  In the present invention, in the case of the thermal imidation as described above, the polyimide film obtained by stretching the self-supporting film in the longitudinal direction and the width direction of the film before or during imidization, if necessary. The linear expansion coefficient (25 to 500 ° C.) is controlled in the range of 1 to 10 ppm / ° C. The draw ratio is not particularly limited, and may be appropriately selected so that a desired linear expansion coefficient can be obtained. Stretching may be performed by sequential biaxial stretching or simultaneous biaxial stretching, and may be uniaxially stretched in the longitudinal direction or the width direction of the film as long as a predetermined linear expansion coefficient is obtained.

  In the present invention, the polyimide film can also be produced by a method using chemical imidization or thermal imidization and chemical imidization in combination. When a polyimide film is produced by chemical imidization, a polyimide film having a relatively low linear expansion coefficient can be obtained without stretching the film.

  Chemical imidization may be performed according to a known method. For example, a polyimide precursor is synthesized in the same manner as in the case of thermal imidization to prepare a polyamic acid solution that is a polyimide precursor solution, and a dehydrating agent and a catalyst are added thereto. If necessary, inorganic fine particles as described in thermal imidization may be added to the polyamic acid solution. The solution is cast on a suitable support (for example, a metal belt) to form a film, and the film is heated to 200 ° C. or lower using a heat source such as hot air or infrared rays. A self-supporting film (also referred to as a gelled film) is produced by heating to a temperature, preferably 40 to 200 ° C., to such an extent that it becomes self-supporting. And the obtained gelled film can be heat-treated and imidized at a temperature of 300 ° C. or higher, preferably 300 to 500 ° C. to obtain a polyimide film. This heat treatment can also be performed stepwise.

  Examples of the dehydrating agent include organic acid anhydrides such as aliphatic acid anhydrides, aromatic acid anhydrides, alicyclic acid anhydrides, heterocyclic acid anhydrides, or a mixture of two or more thereof. Specific examples of the organic acid anhydride include, for example, acetic anhydride, propionic anhydride, butyric anhydride, formic anhydride, succinic anhydride, maleic anhydride, phthalic anhydride, benzoic anhydride, picolinic anhydride, and the like. Acetic anhydride is preferred.

  The catalyst includes organic tertiary amines such as aliphatic tertiary amines, aromatic tertiary amines, heterocyclic tertiary amines, or mixtures of two or more thereof. Specific examples of the organic tertiary amine include, for example, trimethylamine, triethylamine, dimethylaniline, pyridine, β-picoline, isoquinoline, quinoline and the like, and isoquinoline is preferable.

  It is preferable that the usage-amount of a dehydrating agent is 0.5 mol or more with respect to 1 mol of amic acid bonds of the aromatic polyamic acid in a solution. It is preferable that the usage-amount of a catalyst is 0.1 mol or more with respect to 1 mol of amic acid bonds of the aromatic polyamic acid in a solution.

  In the case of chemical imidization, as in the case of thermal imidization, if necessary, a solution of a surface treatment agent such as a coupling agent or a chelating agent is applied to one side or both sides of the self-supporting film before imidization. It may be applied.

  In order to control the linear expansion coefficient (25-500 degreeC) of the polyimide film obtained to the range of 1-10 ppm / degrees C, it can also extend | stretch by the same method as the case of thermal imidation as needed.

  In the present invention, the polyimide film thus obtained, preferably a polyimide film having a linear expansion coefficient (25 to 500 ° C.) of 1 to 10 ppm / ° C., in a state where stress is not substantially applied, is 500 ° C. or more. It is preferable to heat-process with. Thereby, for example, it is possible to obtain a polyimide film having a small dimensional change rate in a heat treatment at a high temperature of 500 ° C. or more, in particular, small shrinkage of the film when the temperature is lowered. This heat treatment is performed at 500 ° C. or more and 550 ° C. or less, more preferably 500 ° C. or more and 540 ° C. or less, further preferably 500 ° C. or more and 530 ° C. or less, particularly preferably 500 ° C. or more and 520 ° C. or less, and 30 seconds to 10 minutes, more preferably It is preferable to carry out for 1 minute to 5 minutes.

  The state in which stress is not substantially applied is a state in which an external force (tension) is not applied, for example, a state in which at least one end of the polyimide film is not fixed, preferably a state in which both ends of the polyimide film are not fixed.

  This heat treatment may be performed following the heat treatment for imidization, or may be performed again after cooling the polyimide film obtained after imidization.

  In addition, it is preferable to perform the cooling after the heat treatment in a state where no stress is applied.

  By heating to 500 ° C. or higher in a state where stress is not substantially applied in this manner, preferably by selecting a heating temperature and a heating time and heating to 500 ° C. or higher in a state where substantially no stress is applied, The rate of dimensional change from 25 ° C. to 500 ° C. is within the range of −0.3% to + 0.6% based on the initial size at 25 ° C., and after heat treatment at 500 ° C. for 20 minutes The weight reduction rate of 1 mass% or less, and the polyimide film whose linear expansion coefficient of 25-500 degreeC is 1-10 ppm / degrees C can be obtained. And a CIS type solar cell with high conversion efficiency can be obtained by using this polyimide film as a substrate.

  Although the thickness of a polyimide film is not specifically limited, About 3-250 micrometers, Preferably it is about 4-150 micrometers, More preferably, it is about 5-125 micrometers, More preferably, it is about 5-100 micrometers.

  The polyimide film obtained by the present invention has good adhesion, sputtering and metal vapor deposition, and is excellent in adhesion by providing a metal layer (including alloy) by a metalizing method such as sputtering or metal vapor deposition. A metal-laminated polyimide film having excellent peel strength can be obtained. The metal layer can be laminated according to a known method.

  The polyimide metal laminate used for the production of CIS solar cells is a laminate obtained by forming a metal layer to be an electrode on a polyimide film, for example, a layer containing molybdenum or tungsten to be an electrode on a polyimide film. It is a laminated body formed.

  The laminated body of this invention has a metal layer on both surfaces of a polyimide film, and two metal layers become a protective layer provided in the electrode of a CIS type solar cell, and a substrate back surface. The two metal layers may be the same or different, but are preferably the same.

  The metal layer, preferably a layer containing molybdenum or tungsten, can be formed by a sputtering method, an evaporation method, or the like. The film forming conditions can be appropriately determined according to a known method.

  The thickness of the metal layer, preferably a layer containing molybdenum or tungsten, can be appropriately selected depending on the purpose of use, but is preferably about 50 nm to 500 nm.

  The number of metal layers can be appropriately selected according to the purpose of use, and may be a multilayer of two or more layers.

  Next, the CIS solar cell of the present invention will be described. The CIS solar cell of the present invention is characterized in that the previously formed metal layer of a laminate in which metal layers are formed on both sides of a polyimide film is used as an electrode.

  The CIS solar cell of the present invention can be produced according to a known method, for example, a method described in JP-A No. 2003-179238. An example of a method for producing a CIS solar cell will be described with reference to FIGS.

  First, as shown to Fig.1 (a), the electrode layer 2 is formed on the polyimide film 1 which is a board | substrate. The electrode layer 2 may be a conductive material layer, but is usually a metal layer, preferably a Mo layer. The electrode layer 2 can be formed by sputtering or vapor deposition.

  In this invention, it is preferable to laminate | stack the electrode layer 2 on the surface (B surface) of the side which contacts the support body of a film at the time of manufacture of a self-supporting film. When the electrode layer is formed on the B surface, the generation of cracks in the electrode layer and the semiconductor layer may be less than when the electrode layer is formed on the surface opposite to the B surface (A surface).

  Moreover, a base metal layer can also be provided between the polyimide film 1 which is a board | substrate and the electrode layer 2, as needed. The base metal layer can be formed by a metalizing method such as a sputtering method or a vapor deposition method.

  Next, as shown in FIG. 1B, a protective layer 8 is formed on the back surface of the polyimide substrate 1. The protective layer preferably has a linear expansion coefficient of 25 to 500 ° C of about 1 to 20 ppm / ° C, and particularly preferably about 1 to 10 ppm / ° C. By providing such a protective layer, generation of cracks in the electrode layer and semiconductor layer and warpage of the substrate can be further suppressed.

  Although the protective layer 8 is not specifically limited, It is preferable that it is the same metal layer as the electrode layer 2 from a viewpoint of suppressing the curvature of a board | substrate. The protective layer 8 can be formed by sputtering or vapor deposition.

  In the present invention, the protective layer 8 is formed after the electrode layer 2 is formed. As described above, when the electrode layer 2 and the protective layer 8 are formed in this order, in other words, when the metal layer (molybdenum layer) previously laminated is used as an electrode, the generation of cracks in the electrode layer and the semiconductor layer is less. Become.

  As described above, the electrode layer is preferably formed on the B surface. Therefore, as a method for manufacturing the solar cell of the present invention, it is particularly preferable to form a protective layer on the A surface after forming an electrode layer on the B surface of the substrate made of a polyimide film. Moreover, as a manufacturing method of the polyimide metal laminated body of this invention, after forming the metal layer used as an electrode in the B surface of the board | substrate which consists of a polyimide film, it is especially preferable to form the metal layer used as a protective layer in A surface. .

  Next, as shown in FIG. 1C, a thin film layer 3 containing an Ib group element, an IIIb group element, and a VIb group element is formed on the electrode layer 2. The thin film layer 3 is typically a thin film made only of a group Ib element, a group IIIb element, and a group VIb element, and becomes a light absorption layer of a solar cell by a subsequent heat treatment. As the Ib group element, Cu is preferably used. As the group IIIb element, it is preferable to use at least one element selected from the group consisting of In and Ga. As the VIb group element, it is preferable to use at least one element selected from the group consisting of Se and S.

  The thin film layer 3 can be formed by vapor deposition or sputtering. The substrate temperature when forming the thin film layer 3 is, for example, room temperature (about 20 ° C.) to about 400 ° C., which is lower than the maximum temperature in the subsequent heat treatment.

  The thin film layer 3 may be a multilayer film composed of a plurality of layers.

Between the electrode layer 2 and the thin film layer 3, for example, a layer containing an Ia group element such as Li, Na, or K, or another layer may be formed. Examples of the layer containing a group Ia element include a layer made of Na ₂ S, NaF, Na ₂ O ₂ , Li ₂ S, or LiF. These layers can be formed by vapor deposition or sputtering.

  Next, by heat-treating the thin film layer 3, as shown in FIG. 2D, a semiconductor layer (chalcopyrite structure semiconductor layer) 3a containing an Ib group element, an IIIb group element, and a VIb group element is formed. This semiconductor layer 3a functions as a light absorption layer of the solar cell.

  The heat treatment for converting the thin film layer into the semiconductor layer is preferably performed in an atmosphere of nitrogen gas, oxygen gas, or argon gas. Or it is preferable to carry out in at least 1 vapor | steam atmosphere chosen from the group which consists of Se and S.

  In the heat treatment, the thin film layer 3 is preferably heated at a rate of temperature in the range of 10 ° C./second to 50 ° C./second, in the range of 500 ° C. to 550 ° C., preferably in the range of 500 ° C. to 540 ° C., more preferably Is heated to a temperature in the range of 500 ° C. to 520 ° C., and then preferably held at a temperature in this range for 10 seconds to 5 minutes. Thereafter, the thin film layer 3 is naturally cooled, or the thin film layer 3 is cooled at a slower speed than natural cooling by using a heater.

  This heat treatment can also be performed in stages. For example, the thin film layer 3 is heated to a temperature within the range of 100 ° C. to 400 ° C., and preferably held at a temperature within this range for 10 seconds to 10 minutes, and then preferably 10 ° C./second to 50 ° C. / Heated to a temperature in the range of 500 ° C. to 550 ° C., preferably in the range of 500 ° C. to 540 ° C., more preferably in the range of 500 ° C. to 520 ° C. It is preferable to hold at a temperature within this range for 10 seconds to 5 minutes. Thereafter, the thin film layer 3 is naturally cooled, or the thin film layer 3 is cooled at a slower speed than natural cooling by using a heater.

In this way, the semiconductor layer 3a including the group Ib element, the group IIIb element, and the group VIb element to be the light absorption layer is formed. The semiconductor layer 3a to be formed is, for example, CuInSe ₂ , Cu (In, Ga) Se ₂ , or CuIn (S, Se) ₂ , Cu (In, Ga) (S , Se) ₂ semiconductor layer.

  The semiconductor layer 3a can also be formed as follows.

  On the electrode layer 2, a thin film layer 3 that does not contain a VIb group element and contains an Ib group element and a IIIb group element, typically a thin film composed only of an Ib group element and a IIIb group element is formed. Then, the heat treatment for converting the thin film layer into a semiconductor layer is performed in an atmosphere containing a VIb group element, preferably in at least one vapor atmosphere selected from the group consisting of Se and S, whereby an Ib group element is obtained. And a semiconductor layer containing a group IIIb element and a group VIb element can be formed. The method for forming the thin film layer and the heat treatment conditions are the same as described above.

After the formation of the semiconductor layer 3a, the window layer (or buffer layer) 4 and the upper electrode layer 5 are sequentially laminated in accordance with a known method, for example, as shown in FIG. To produce a solar cell. As the window layer 4, for example, a layer made of CdS, ZnO, or Zn (O, S) can be used. The window layer may be two or more layers. As the upper electrode layer 5, for example, a transparent electrode such as ITO or ZnO: Al can be used. An antireflection film such as MgF ₂ may be provided on the upper electrode layer 5.

  Note that the configuration and formation method of each layer are not particularly limited, and can be appropriately selected.

  In the present invention, since a flexible polyimide substrate is used, a CIS solar cell can be manufactured by a roll-to-roll method.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to these Examples.

  The physical properties of the polyimide film (dimensional change rate and linear expansion coefficient at 25 ° C. to 500 ° C. and weight reduction rate after heat treatment at 500 ° C. for 20 minutes) were determined as described above. In addition, TAI / SS6100 by SII Technology was used for the measurement of the dimensional change rate and linear expansion coefficient of 25 ° C to 500 ° C of the polyimide film.

  The evaluation method of the occurrence of cracks in the molybdenum laminated polyimide film is as follows.

  After heating the laminated body which laminated | stacked the molybdenum layer on both surfaces of the polyimide film for 2.5 minutes at 500 degreeC, it cooled to room temperature and observed the molybdenum layer surface with the optical microscope, and confirmed the presence or absence of the crack.

[Example 1]
(Preparation of polyamic acid solution)
Into the polymerization tank, 2470 parts by mass of N, N-dimethylacetamide was added, and then 294.33 parts by mass of 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride (s-BPDA) and p-phenylenediamine. (PPD) 108.14 parts by mass was added and a polymerization reaction was carried out at 30 ° C. for 10 hours to obtain a polyamic acid solution (polyimide precursor solution). The logarithmic viscosity (measurement temperature: 30 ° C., concentration: 0.5 g / 100 ml solvent, solvent: N, N-dimethylacetamide) of the polymer of the obtained polyamic acid solution was 2.66, and the solution was rotated at 30 ° C. The viscosity was 3100 poise.

(Manufacture of polyimide film)
To the obtained polyamic acid solution, 0.55 mol of acetic anhydride and 0.55 mol of isoquinoline are added to 1 mol of the polyamic acid repeating unit, and the mixture is sufficiently stirred to form a dope for film formation at about 0 ° C. A liquid was prepared.

  The obtained dope solution was continuously cast on a metal endless belt smoother than a T-die, and dried with hot air while rotating the belt. The temperature conditions of the belt chamber at this time were a belt temperature of 120 ° C. × 2 minutes and a cooling pulley temperature of 85 ° C. After drying, the gel film was obtained by peeling from the endless belt. The residual volatile content of this gel film was 31%.

  Next, this gel film was imidized by heating in a tenter chamber at 200 ° C. for 30 seconds, and then gradually raising the temperature in the range of 350 to 500 ° C., followed by heat treatment for a total time of 120 seconds. Thereafter, the temperature was gradually lowered to room temperature to obtain a polyimide film having an average film thickness of 35 μm. Then, the obtained polyimide film was heat-treated at 500 ° C. for 2.5 minutes in a state where no stress was applied (no stress state).

  About the obtained polyimide film, when the dimensional change rate and linear expansion coefficient of 25 ° C. to 500 ° C. and the weight reduction rate after heat treatment at 500 ° C. for 20 minutes were measured and evaluated, the maximum value of the dimensional change rate of 25 to 500 ° C. Is 0.55% / 0.45% (MD / TD), the minimum value is 0.05% / 0.15% (MD / TD), and the linear expansion coefficient at 25 to 500 ° C. is 7 ppm / ° C., 500 The weight loss rate after heat treatment at 20 ° C. was 0.351%.

(Manufacture of molybdenum laminated polyimide film)
After pretreatment by RF sputtering (power: 2.0 kW / m ² ), a Mo layer having a thickness of 100 nm was formed on both sides of the obtained polyimide film by DC sputtering in the order of B side and A side under the following conditions. Thus, a molybdenum laminated polyimide film was obtained.
(Mo sputtering conditions)
Power: 40 kW / m ² (DC),
Sputtering gas: Ar,
Chamber gas pressure: 0.6 Pa,
Polyimide film width: 300 mm
Conveying speed: 0.3 m / min.

  When the occurrence of cracks in the obtained molybdenum-laminated polyimide film was measured and evaluated, no cracks were observed in the previously formed B-side molybdenum layer even after heat treatment at 500 ° C. for 2.5 minutes.

[Example 2 (comparative example)]
A molybdenum-laminated polyimide film was obtained in the same manner as in Example 1 except that the Mo layer was formed in the order of A and B surfaces.

  The obtained molybdenum laminated polyimide film was measured and evaluated for occurrence of cracks. After heat treatment at 500 ° C. for 2.5 minutes, after forming the A-side molybdenum layer, the B-side molybdenum layer was partially cracked. Had occurred.

[Example 3 (reference example)]
The molybdenum-laminated polyimide film obtained in Example 1 was heat-treated at 350 ° C. for 2.5 minutes, and the occurrence of cracks was measured and evaluated. The occurrence of cracks in both the B-side molybdenum layer and the A-side molybdenum layer Was not observed.

  As described above, according to the present invention, even when heat treatment is performed at a high temperature of 500 ° C. or higher, the use of a polyimide metal laminate with less occurrence of cracks in the metal layer provides flexibility and conversion efficiency. A high CIS solar cell can be obtained.

DESCRIPTION OF SYMBOLS 1 Polyimide substrate 2 Electrode layer 3 Thin film layer 3a Semiconductor layer 4 Window layer 5 Upper electrode layers 6 and 7 Extraction electrode 8 Protection layer

Claims (8)

It has a polyimide film and a metal layer to be an electrode on the polyimide film, and is a polyimide metal laminate used for manufacturing a CIS solar cell having a chalcopyrite structure semiconductor layer,
On the surface on the opposite side of the surface on which the metal layer to be the electrode is formed, further has a metal layer to be a protective layer,
The laminate, wherein the metal layer to be the electrode is formed before the formation of the metal layer to be the protective layer. A polyimide precursor solution self-supporting film prepared by casting and heating a polyimide precursor solution obtained from an aromatic tetracarboxylic acid component and an aromatic diamine component on a support, and heating the polyimide film. Is a polyimide film manufactured by imidizing,
The laminate according to claim 1, wherein the metal layer to be the electrode is formed on a surface (B surface) on the side in contact with the support of the film during the production of the self-supporting film.   The polyimide film is obtained from an aromatic tetracarboxylic acid component mainly composed of 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and an aromatic diamine component mainly composed of paraphenylenediamine. The laminate according to claim 1, wherein the laminate is a polyimide film.   The laminate according to any one of claims 1 to 3, wherein the metal layer to be the electrode is a layer containing molybdenum.   The laminate according to any one of claims 1 to 4, wherein the metal layer serving as the protective layer is a layer containing molybdenum.   The laminate according to any one of claims 1 to 5, wherein the metal layer to be the electrode and the metal layer to be the protective layer are formed by sputtering or vapor deposition.   The CIS type solar cell containing the laminated body in any one of Claims 1-6.   7. A CIS comprising a chalcopyrite structure semiconductor layer formed on a metal layer previously formed among the metal layers formed on both surfaces of the polyimide film of the laminate according to claim 1. Of the solar cell solar cell.

Images