JP2010050282A - Method of evaluating silicon monocrystalline substrate and method of manufacturing epitaxial substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of evaluating a silicon monocrystalline substrate, which can identify and quantify heavy metals such as Fe or Mo with high sensitivity, which is necessary for manufacturing an N/N/N epitaxial substrate, and to provide a method of manufacturing an epitaxial substrate, which can obtain a good epitaxial substrate with a low concentration of heavy metal impurities such as Fe or Mo. <P>SOLUTION: The method of evaluating a silicon monocrystalline substrate includes steps of: preparing a P-type silicon monocrystalline substrate: growing an N-type silicon monocrystalline thin film by vapor deposition on one principal surface of the P-type silicon monocrystalline substrate; exposing the principal surface of the P-type silicon monocrystalline substrate by removing only the N-type silicon monocrystalline thin film from the P-type silicon monocrystalline substrate having the N-type silicon monocrystalline thin film; and measuring the concentration of heavy metals in the P-type silicon monocrystalline substrate, the principal surface of which has been exposed by DLTS method. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for evaluating a silicon single crystal substrate and a method for manufacturing an epitaxial substrate using the evaluation method.

  In recent years, an epitaxial substrate that has come to be used as a substrate for an image sensor such as a CCD or CIS has a single crystal thin film formed on a base substrate. This epitaxial substrate can be formed by stacking layers having different resistivity and conductivity type, and various layer structures can be formed on the substrate surface layer.

In such an epitaxial substrate for an image sensor, it is very important to reduce the level of heavy metal impurities in the substrate. This is because it is generally considered that a metal impurity present in a silicon single crystal substrate forms a deep level and becomes a recombination center. In particular, the presence of metal impurities in the vicinity of the substrate surface is thought to affect device characteristics.
For example, when a metal impurity is present in the device active layer, a charge is generated from the generation center, and as a result, a dark current is generated. If this dark current level is deteriorated, a device characteristic defect unique to the imaging element called white scratch occurs.

  In general, in order to manufacture an epitaxial substrate, a single crystal thin film is vapor-phase grown at a high temperature. Therefore, when a single crystal thin film is deposited, if a metal impurity is present in the vapor phase growth furnace, the single crystal thin film is contaminated by the metal impurity. Sources of contamination of these metals include, for example, silicon crystals and silicon-containing compounds used as raw materials, metal impurities deposited during cleaning or drying of reaction furnaces such as quartz bell jars and quartz cylinders, and materials constituting the reaction furnace. Possible metal impurities, stainless steel components normally used in the piping system of the apparatus, and the like.

Among Mo, Fe, Ni, and Cr contained in the stainless steel member among the metal impurities that are taken into the silicon single crystal substrate or the epitaxial substrate, it is Fe and Mo that require special attention.
Since Fe becomes a strong recombination center, it becomes a production center and tends to deteriorate the dark current level. Further, Mo is less likely to become a chloride and is likely to remain in the reaction furnace as compared with other impurities. Therefore, it is difficult to clean by so-called baking in a reactor or vapor etching, and as a result, it is taken into a silicon single crystal substrate or an epitaxial substrate.

  Such metal impurity element evaluation methods include wafer lifetime measurement (WLT), surface photovoltaic method (SPV), Deep Level Transient Spectroscopy method (DLTS), and chemical analysis method (for example, see Non-Patent Document 1). ).

“Semiconductor Encyclopedia” (Industry Research Committee, published on November 22, 1999) pages 146-147, pages 1065-1066

However, although the WLT method is highly sensitive to impurities, it cannot identify and quantify impurities such as what kind of contaminating element is and how much it is. The SPV method can perform quantitative measurement with high sensitivity with respect to the Fe concentration in the P-type silicon single crystal substrate. However, when the silicon single crystal substrate is N-type or when the element is other than Fe, for example, Mo, the same as the WLT method. Element identification and quantification are not possible.
The chemical analysis method can identify and quantify almost all impurity elements by selecting a combination of impurity recovery method and analyzer. However, the sensitivity is lower than that of the WLT method or SPV method, and processing and measurement take time and labor.

  The DLTS method is an excellent method that can directly measure the amount of deep levels formed by impurity elements. With respect to a P-type silicon single crystal substrate, both Fe and Mo can be identified and quantified with high sensitivity. However, Fe contamination cannot be detected for the N type. Although it is also possible to detect Mo, since the electrical activity in the silicon single crystal is lower than that of the P type, the measurement sensitivity falls to 1/10 or less of that of the P type.

On the other hand, an epitaxial substrate for a CCD or CIS imaging device having a high number of pixels and high sensitivity has an N / N single-layer or multilayer single crystal thin film deposited on an N-type silicon single crystal substrate in terms of device characteristics. An / N epitaxial substrate is often used.
In other words, with respect to high-pixel-number high-sensitivity CCD and CIS N / N / N epitaxial substrates that require more impurity level management, the conventional impurity measurement method evaluates the identification and quantification of Fe and Mo with high sensitivity. There was a problem that it was not possible.

  The present invention has been made in view of the above-mentioned problems, and silicon capable of performing identification and quantification of heavy metals such as Fe and Mo, which are necessary when manufacturing an N / N / N epitaxial substrate, with high sensitivity. An object of the present invention is to provide a method for evaluating a single crystal substrate and a method for producing an epitaxial substrate capable of obtaining a good epitaxial substrate having a low concentration of heavy metal impurities such as Fe and Mo.

  In order to solve the above problems, in the present invention, a step of preparing a P-type silicon single crystal substrate, a step of vapor-growing an N-type silicon single crystal thin film on one main surface of the P-type silicon single crystal substrate, Removing only the N-type silicon single crystal thin film from the P-type silicon single crystal substrate having the N-type silicon single crystal thin film to expose the main surface of the P-type silicon single crystal substrate; And a step of measuring the heavy metal concentration of the P-type silicon single crystal substrate with the exposed silicon. (Claim 1) A method for evaluating a silicon single crystal substrate is provided.

As described above, when vapor-phase-growing an N-type silicon single crystal thin film on a P-type silicon single crystal substrate, heavy metal impurities taken into the N-type silicon single crystal thin film are also solidified in the P-type silicon single crystal substrate. Phase diffusion. This is because the silicon single crystal substrate becomes high temperature during vapor phase growth.
Then, if the heavy metal concentration is measured by DLTS method on the P-type silicon single crystal substrate with the main surface exposed by removing the N-type silicon single crystal thin film, P during the vapor phase growth of the N-type silicon single crystal thin film. It is possible to measure heavy metal impurities diffused in a solid phase in a silicon single crystal substrate with high sensitivity. In other words, by using a P-type silicon single crystal substrate capable of evaluating the heavy metal concentration with high sensitivity as the substrate, the heavy metal incorporated into the thin film during vapor phase growth of the N-type silicon single crystal thin film with high sensitivity. Can be detected.

  Moreover, it is preferable that the heavy metal to be measured is at least one of molybdenum (Mo) and iron (Fe).

Since Mo and Fe have very low electrical activity in the N-type silicon single crystal substrate or do not form detectable deep levels, in the case of the N-type silicon single crystal substrate, these heavy metals are evaluated by the DLTS method. I couldn't.
However, according to the method for evaluating a silicon single crystal substrate of the present invention, it is possible to evaluate Mo and Fe incorporated when vapor-phase-growing an N-type single crystal thin film, that is, indirectly a single crystal of an N / N / N epitaxial substrate. This is an evaluation method capable of evaluating the Mo and Fe concentrations in the thin film.

  Furthermore, in the present invention, the presence or absence of heavy metal contamination in the vapor phase growth furnace is evaluated by the method for evaluating a silicon single crystal substrate described in the present invention. An epitaxial substrate manufacturing method is provided, characterized by vapor-phase growth of a silicon single crystal thin film on a main surface of a crystal substrate.

  In this way, by using the vapor phase growth furnace in which the concentration of heavy metal impurities is low and it can be determined that there is no problem by the evaluation method of the silicon single crystal substrate of the present invention, which is highly sensitive to heavy metal impurities, and there is no problem. For example, the level of contamination due to Fe or Mo in the substrate or thin film can be kept low by performing single-layer or multi-layer vapor phase growth of the N silicon single crystal thin film on the N-type silicon single crystal substrate. For this reason, it is possible to suppress factors that deteriorate white scratch characteristics particularly in an image sensor device such as a highly sensitive CCD or CIS. For this reason, a silicon epitaxial substrate with good device characteristics can be manufactured.

  As described above, in the present invention, vapor phase growth of an N-type silicon single crystal thin film is performed on a P-type silicon single crystal substrate, and after removing the substrate, the N-type silicon single crystal thin film is removed by etching or polishing. Then, heavy metal concentration measurement is performed on the surface layer of the P-type silicon single crystal substrate by the DLTS method. If the vapor phase growth furnace is contaminated with heavy metal, the heavy metal diffuses not only to the N-type silicon single crystal thin film but also to the P-type silicon single crystal substrate side during the high temperature reaction during the vapor phase growth. Then, the heavy metal can be detected with high sensitivity by removing the N-type silicon single crystal thin film and performing DLTS measurement on the surface layer of the P-type silicon single crystal substrate.

Hereinafter, the present invention will be described more specifically.
As described above, a method for evaluating a silicon single crystal substrate capable of highly sensitively identifying and quantifying heavy metals such as Fe and Mo, which are necessary when manufacturing an N / N / N epitaxial substrate, and Fe and Development of an epitaxial substrate manufacturing method capable of obtaining a good epitaxial substrate with a low concentration of heavy metal impurities such as Mo has been awaited.

For example, as shown in FIG. 4, conventionally, when evaluating the heavy metal concentration of an N / N / N epitaxial substrate, an N-type silicon single crystal thin film is vapor-phase grown on the N-type silicon single crystal substrate (see FIG. 4). 4 (a), (b)), and thereafter, the heavy metal concentration in the N-type silicon single crystal thin film was evaluated by the DLTS method (FIG. 4C). However, as described above, the DLTS method has very low sensitivity to heavy metals in N-type silicon, and is an evaluation method necessary for manufacturing an N / N / N epitaxial substrate having a low heavy metal concentration, which is required in recent years. Could not be.
Therefore, the present inventor has intensively studied whether or not the detection sensitivity can be improved by devising the silicon single crystal substrate rather than newly performing a process for lowering the detection limit of the DLTS method. It was.

  As a result, the present inventor used a P-type silicon single crystal substrate capable of identifying and quantifying Fe and Mo with high sensitivity as a substrate on which an N-type silicon single crystal thin film is vapor-grown, and vapor-grown N If the heavy metal concentration is measured by the DLTS method on the exposed P-type silicon single crystal substrate after removing the silicon single crystal thin film, the presence or absence of heavy metal contamination during vapor phase growth of the N-type silicon single crystal thin film The present invention was completed based on the idea that can be evaluated with high sensitivity.

  Here, prior to describing the method for evaluating a silicon single crystal substrate of the present invention, the DLTS method will be briefly described.

  In the DLTS method, a reverse bias voltage is applied to a Schottky junction or a pn junction, the depletion layer generated at the junction is expanded, and the capacitance change (ΔC) of the depletion layer that changes with the introduction of a periodic pulse is clever. To obtain information on deep levels from the temperature dependence of ΔC. Specifically, in silicon, when a low temperature region of 300 K or less is swept and a peak is formed, the peak indicates the presence of a certain deep level. At that time, roughly deep level energy is found from the peak temperature, and the peak height (ΔC) shows a theoretically deep level density.

Hereinafter, the present invention will be described in detail with reference to FIGS. 1 and 2, but the present invention is not limited thereto.
FIG. 1 is a flowchart showing an example of an evaluation method for a silicon single crystal substrate according to the present invention. FIG. 2 is a conceptual diagram showing a concept of the evaluation method for a silicon single crystal substrate according to the present invention.

(Process a)
First, as shown in FIG. 1A, a P-type silicon single crystal substrate is prepared. The prepared P-type silicon single crystal substrate only needs to have a P-type conductivity, and the resistivity and the like can be arbitrarily selected.

(Process b)
Next, as shown in FIG. 1B, an N-type silicon single crystal thin film is vapor-phase grown on one main surface of a P-type silicon single crystal substrate. Here, an N-type single-layer or multilayer silicon single crystal thin film is vapor-phase grown. The growth conditions may be general.
At this time, as shown in FIG. 2B, heavy metal impurities such as Mo and Fe contained in the surface N-type silicon single crystal thin film diffuse from the N-type silicon single crystal thin film to the P-type silicon single crystal substrate. , Heavy metal will be present from the surface with distribution.

  Thereafter, it is desirable to hold the epitaxial substrate at a high temperature as necessary. Thereby, heavy metal in the N-type silicon single crystal thin film can be reliably diffused into the P-type silicon single crystal substrate, and detection accuracy can be further improved.

(Process c)
Thereafter, as shown in FIG. 1C, only the N-type silicon single crystal thin film of the P-type silicon single crystal substrate having the N-type silicon single crystal thin film is removed to expose the main surface of the P-type silicon single crystal substrate. .
The removal of the N-type silicon single crystal thin film can be performed by polishing or chemical etching. In the case of chemical etching, a mixture of hydrofluoric acid and nitric acid or a mixture of hydrofluoric acid and nitric acid with water or acetic acid is used. Etching may be performed with a general silicon etchant.
As shown in FIG. 2C, even if the N-type silicon single crystal thin film is removed, the mixed heavy metal is diffused in the P-type silicon single crystal substrate in the previous step (b), and distributed from the surface. Is present. Therefore, by removing the silicon single crystal thin film in this step, a P-type silicon single crystal substrate with high detection sensitivity is used instead of using an N-type silicon single crystal thin film with low detection sensitivity and difficult to evaluate heavy metals as a surface. Is exposed, and the surface of the P-type silicon single crystal substrate is used for measurement, whereby heavy metals can be evaluated with high sensitivity.

(Process d)
Finally, as shown in FIG. 1D, the heavy metal concentration of the P-type silicon single crystal substrate with the main surface exposed is measured by the DLTS method. The heavy metal detected by this measurement is diffused from the N-type silicon single crystal thin film to the P-type silicon single crystal substrate side when vapor-phase-growing the N-type silicon single crystal thin film.

  Thus, according to the silicon single crystal substrate evaluation method of the present invention, when vapor-phase-growing an N-type silicon single crystal thin film, the amount of heavy metal taken into the thin film or substrate from the furnace is detected with high sensitivity. In addition, since it is possible to determine whether or not the vapor phase growth furnace has a low heavy metal contamination level, an epitaxial substrate having a low heavy metal concentration can be manufactured.

Here, the heavy metal to be evaluated can be at least one of Mo and Fe.
Mo has a much lower electrical activity in an N-type silicon single crystal substrate than in a P-type silicon single crystal substrate. Therefore, even if the N-type silicon single crystal thin film itself is measured by the DLTS method, the detection sensitivity is high. Could not be detected due to problems.
Further, since Fe does not form a deep level that can be detected by the DLTS method in the N-type silicon single crystal, the detection itself could not be performed by the DLTS method. However, since the present invention evaluates the heavy metal concentration of the P-type silicon single crystal substrate, it can also detect Mo and Fe taken in when the N-type silicon single crystal thin film is vapor-phase grown. That is, it is an evaluation method that can evaluate the concentration of Mo and Fe of the single crystal thin film in the N / N / N epitaxial substrate.

  A method for manufacturing an epitaxial substrate having a low heavy metal concentration using such a method for evaluating a silicon single crystal substrate will be described below, but the present invention is of course not limited thereto.

First, a P-type silicon single crystal substrate is prepared as a base material for an epitaxial substrate for evaluation, and is placed on a susceptor provided in a reaction vessel of a vapor phase growth furnace.
Next, vapor phase growth of an N-type silicon single crystal thin film layer is performed on the surface of the previously prepared P-type silicon single crystal substrate. This vapor phase growth may be performed under general conditions, but it is desirable to perform under the same conditions as in manufacturing a product.
Thereafter, the supply of the source gas and the dopant gas is stopped, the temperature in the reaction vessel is lowered to the take-out temperature, and the evaluation epitaxial substrate is taken out.
Subsequently, the N-type silicon single crystal thin film on the surface of the epitaxial substrate is removed.
Thereafter, the identification of heavy metal species such as Mo concentration and Fe concentration and the concentration thereof are measured on the epitaxial substrate from which the thin film has been removed, using the DLTS method. Up to this point, the procedure is almost the same as the above-described method for evaluating a silicon single crystal substrate.

  If the concentration of heavy metals such as Mo and Fe is smaller than a desired value, it is determined that the vapor phase growth furnace is not contaminated with heavy metals, and the vapor phase growth furnace is used to form an N-type silicon single crystal substrate. At least one layer of N-type silicon single crystal thin film is vapor-phase grown on the main surface. On the other hand, when the heavy metal concentration is higher than the predetermined value, the inside of the vapor phase growth furnace is cleaned, and the presence or absence of heavy metal contamination may be evaluated again by the evaluation method of the present invention.

  As described above, if an epitaxial substrate is manufactured in a vapor phase growth furnace in which a predetermined level of heavy metal contamination is confirmed, an epitaxial substrate with little contamination by heavy metals such as Mo and Fe can be manufactured. It is possible to obtain a semiconductor device in which defective white scratch characteristics are suppressed.

  In general, the vapor phase growth furnace requires regular maintenance for removing by-products in the reaction furnace. At this time, since the inside of the reaction furnace is opened to the atmosphere, corrosion of stainless steel members or carrying of heavy metals during work may occur. For this reason, the heavy metal contamination level of the epitaxial substrate is deteriorated immediately after such maintenance, and the contamination level tends to improve with each subsequent reaction. However, even if the trend is getting better, it is difficult to judge at what level it is safe to manufacture the epitaxial substrate. However, this determination becomes very easy if the method for evaluating a silicon single crystal substrate of the present invention is used.

EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.
(Example)
The cylinder type vapor deposition reactor was opened to the atmosphere, and bell jar maintenance was performed.
Thereafter, six P-type, approximately 10 Ωcm silicon single crystal substrates having a diameter of 6 inches (150 mm) were prepared, and one silicon single crystal substrate was placed on the susceptor in the vapor phase growth furnace.
Then, an N-type silicon single crystal thin film having a resistivity of 10 Ωcm and a thickness of 10 μm was vapor-grown at a film forming temperature of 1150 ° C. to produce a silicon epitaxial substrate.

  Thereafter, the silicon epitaxial substrate was cooled to the take-out temperature in the vapor phase growth furnace and taken out. This series of operations (excluding bell jar maintenance) was repeated and a total of six silicon epitaxial substrates were produced by performing a total of six gas phase reactions.

Thereafter, using a JIS-B solution (hydrofluoric acid: nitric acid: acetic acid: pure water = 1: 15: 3: 3 mixed solution), the silicon single crystal thin film of 10 μm on the surface of all six silicon epitaxial substrates was prepared. It was removed by etching.
Further, a Ti Schottky electrode was formed on the surface of the silicon single crystal substrate on the side where the silicon single crystal thin film was removed, and the Mo concentration was measured by the DLTS method. The result is shown in FIG. FIG. 3 is a graph showing the relationship between the number of vapor phase growths from exposure to the atmosphere and the Mo concentration in silicon single crystal substrates of Examples and Comparative Examples described later.

(Comparative example)
The cylinder type vapor deposition furnace is called a batch reactor, and can charge a plurality of substrates in one reaction. Therefore, as a comparative example, six silicon single crystal substrates of the same standard as the example were prepared, and a silicon epitaxial substrate was manufactured in the same manner as in the example, and a total of six silicon epitaxial substrates were obtained.
Thereafter, a Ti Schottky electrode was formed on the surface of the silicon single crystal thin film, and the Mo concentration was measured by the DLTS method. The result is shown in FIG.

As a result, as shown in FIG. 3, in the silicon epitaxial substrate of the example, 5 × 10 ¹¹ atoms / cm ³ of Mo was present on the surface after the bell jar maintenance. It gradually decreased and decreased to about 1 × 10 ¹¹ atoms / cm ³ at the fourth reaction. Further, the lower limit of DLTS detection was 5 × 10 ¹⁰ atoms / cm ³ after the fifth time.

  On the other hand, in the silicon epitaxial substrate of the comparative example, the Mo concentration was evaluated to be below the detection limit of DLTS immediately after the bell jar maintenance. In other words, Mo was not detected by the evaluation method of the comparative example, although it was fabricated simultaneously in the same vapor phase growth furnace and there should have been heavy metal contamination equivalent to the epitaxial substrate of the example. That is, it was found that the detection sensitivity for contamination was not sufficient and was not at a practical level.

The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
For example, the present invention is not limited to a vapor growth furnace for vapor-depositing a single crystal thin film, and can be applied to various vapor growth furnaces such as a vertical type (pancake type), a barrel type (cylinder type), and a single wafer type. It is.

It is the flowchart which showed an example of the evaluation method of the silicon single crystal substrate of this invention. It is the conceptual diagram which showed the concept of the evaluation method of the silicon single crystal substrate of this invention. It is a graph which shows the relationship between the vapor-phase growth frequency from the atmospheric exposure in the silicon single crystal substrate of the Example of this invention, and a comparative example, and Mo concentration. It is the flowchart which showed an example of the evaluation method of the conventional silicon single crystal substrate.

Claims (3)

Preparing a P-type silicon single crystal substrate;
Vapor-phase growing an N-type silicon single crystal thin film on one main surface of the P-type silicon single crystal substrate;
Removing only the N-type silicon single crystal thin film of the P-type silicon single crystal substrate having the N-type silicon single crystal thin film to expose the main surface of the P-type silicon single crystal substrate;
And a step of measuring the heavy metal concentration of the P-type silicon single crystal substrate with the main surface exposed by a DLTS method.   The method for evaluating a silicon single crystal substrate, wherein the heavy metal to be measured is at least one of molybdenum and iron.   3. The presence or absence of heavy metal contamination in the vapor phase growth furnace is evaluated by the method for evaluating a silicon single crystal substrate according to claim 1 or 2, and the silicon single crystal is evaluated using the vapor phase growth furnace evaluated as having no heavy metal contamination. A method for producing an epitaxial substrate, comprising vapor-phase-growing a silicon single crystal thin film on a main surface of a substrate.

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