JP2009277868A - Heating device and method of manufacturing semiconductor substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heating device which has superior controllability of heating temperature, and to provide a method of manufacturing a semiconductor substrate. <P>SOLUTION: A vapor phase treatment apparatus includes a heating lamp 56 as a heater for light emission heating, and a cooling member (a cooling mechanism section comprising a cooling base 51, a coating layer 55, a ground coating layer, piping 61, a temperature sensor 62, a heat exchanger 63, a pump 64, a control unit 65, and a cooling medium 66) which cools the heating lamp 56. At least part of an outer peripheral surface of the heating lamp 56 is in contact with the cooling member (the cooling mechanism section). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a heating apparatus and a method for manufacturing a semiconductor substrate, and more particularly to a heating apparatus and a method for manufacturing a semiconductor substrate that can change temperature quickly.

  2. Description of the Related Art Conventionally, a film forming apparatus and an etching apparatus are known as a heating apparatus for heating a semiconductor substrate to a predetermined temperature in order to form a film on a surface of a semiconductor substrate or perform etching. For example, in JP-A-8-191050 (hereinafter referred to as Patent Document 1), a film forming apparatus for forming a thin film on the surface of a substrate held by a susceptor, a halogen lamp is used as a heater used for heating the substrate. It is disclosed that the holding part in which the halogen lamp is disposed inside the groove constitutes the bottom wall of the reaction chamber (the wall on the back side of the susceptor). The position of the halogen lamp is fixed by a quartz tube which is a separate member from the holding portion.

In Patent Document 1, the terminal portion of the halogen lamp (the terminal portion exposed to the outside of the holding portion) is air-cooled, but there is no disclosure of particularly aggressive cooling of the light-emitting portion of the halogen lamp.
JP-A-8-191050

  In recent years, development and use of semiconductor light emitting devices using gallium nitride (GaN) and the like have been advanced. In such a semiconductor light emitting device, a multiple quantum well structure (MQW) in which thin film layers having different compositions (a well layer having a relatively small band gap and a barrier layer having a relatively large band gap) are stacked is used as the light emitting layer. . In order to form such MQW, it is necessary to continuously form well layers and barrier layers having different compositions. In this case, the growth conditions (particularly the film formation temperature) of each layer are different due to the difference in composition between the well layer and the barrier layer, and therefore it is necessary to quickly switch the growth conditions (particularly the film formation temperature). This is because, when the film formation temperature changing speed is slow, the time during which the temperature is changed becomes longer, and the thickness of the film grown under conditions different from the initially assumed growth conditions becomes thicker. This is because the characteristics of the above will deteriorate.

  However, in the conventional heating apparatus, a normal blower or the like is used for the heater (light emitting portion of the halogen lamp) in order to prevent the material (for example, quartz) constituting the lamp surface from being softened and deformed by heating. However, no particular measures have been taken from the viewpoint of improving the change speed when changing the temperature of the heater. For this reason, it is difficult to change the heating temperature quickly (especially when the set temperature is lowered).

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a heating apparatus and a method for manufacturing a semiconductor substrate, which are excellent in controllability of heating temperature.

  A heating device according to the present invention includes a light radiation heating heater and a cooling member that cools the light radiation heating heater. At least a part of the outer peripheral surface of the light radiation heater is in contact with the cooling member.

  If it does in this way, the heater for light radiation heating can be directly cooled via the contact part of the heater for light radiation heating and a cooling member. For this reason, when changing the heating temperature in the heater for light radiation heating (especially when lowering the set temperature), the temperature can be changed quickly. As a result, the controllability of the heating temperature can be improved.

  Further, since the light radiant heating heater can be directly cooled by the cooling member, the light radiant heater is sufficiently cooled and kept healthy even during high temperature heating (for example, high temperature heating of about 1200 ° C.). It is possible. In addition, if it is going to obtain sufficient cooling capacity corresponding to such high temperature heating, for example by spraying of the cooling gas using a blower, it will be said that an apparatus will enlarge in order to enlarge the flow volume of cooling gas. There's a problem. In addition, since a large amount of heated gas used for cooling has a great influence on the temperature environment of the entire heating device, there is a problem that it is difficult to design the heating device.

  In the heating apparatus, the light radiation heating heater may be disposed inside a groove formed on the surface of the cooling member. In this case, since the inner wall of the groove is disposed so as to surround a part of the outer periphery of the light radiation heating heater, if the inner wall is brought into contact with the surface of the light radiation heating heater, the light radiation heating heater and the cooling member are cooled. The contact area with the member can be increased. As a result, the light radiation heater can be efficiently cooled.

  In addition, if a reflection film that reflects light is formed in advance on the inner wall surface of the groove, the light emitted from the light radiation heater can be reflected to the outside of the groove by the reflection film. As a result, efficient heating can be performed.

  The heating apparatus may further include a holder for holding the object to be heated, which is disposed at a position facing the heater for heating light radiation. In this case, the object to be heated can be indirectly heated by heating the holder (for example, susceptor). If it does in this way, since a holder can be used as a soaking | uniform-heating member, the whole heating target object can be heated uniformly.

  In the above heating device, the heating temperature of the light radiation heater may be 1000 ° C. or higher. In this case, the present invention is particularly effective in heating at a high temperature of 1000 ° C. or more, because the sound radiation heater can be secured while the temperature can be changed quickly when the heating temperature is changed.

  In the method for manufacturing a semiconductor substrate according to the present invention, the step of arranging the substrate at a position facing the light radiation heater in the heating device is performed. A step of treating the surface of the substrate is performed while heating the substrate with a heater for heating light radiation. In this way, since the heating temperature of the substrate can be quickly changed in the treatment of the substrate surface, for example, when layers having different compositions are continuously formed on the substrate surface, a composition suitable for each layer is formed. It is possible to quickly change the film conditions (particularly, the film formation temperature). As a result, it is possible to obtain a laminated structure having a sharp composition change in the thickness direction.

  In the semiconductor substrate manufacturing method, the substrate heating temperature in the step of processing the substrate surface may be 1000 ° C. or higher. In the step of treating the substrate surface, a step of forming a layer containing a nitride semiconductor (eg, gallium nitride) on the substrate surface may be performed. In this case, the present invention is particularly effective.

  According to the present invention, it is possible to improve the controllability of the heating temperature and to heat the object to be processed (for example, the substrate) at a higher temperature (for example, about 1200 ° C.) than before. As a result, it is possible to obtain a semiconductor substrate having a laminated structure with a sharp composition change.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

  FIG. 1 is a schematic cross-sectional view showing a vapor phase processing apparatus according to the present invention. FIG. 2 is a partial cross-sectional schematic diagram showing the configuration of the heater of the vapor phase processing apparatus shown in FIG. With reference to FIG. 1 and FIG. 2, the vapor-phase processing apparatus by this invention is demonstrated.

  As shown in FIG. 1, a vapor phase processing apparatus 1 according to the present invention is a vapor phase growth apparatus, and a surface is exposed inside a processing chamber 4 and the processing chamber 4, and a substrate 8 is mounted on the surface. A susceptor 2, a heater 5 for heating the substrate 8 mounted on the susceptor 2 via the susceptor 2, a reaction gas supply member 9 for supplying a reaction gas into the processing chamber 4, and a processing chamber 4 and a gas exhaust member 10 for exhausting the reacted gas from the inside. The processing chamber 4 can have an arbitrary shape. For example, a cross-sectional shape in a direction perpendicular to a direction indicated by arrows 11 and 12 which are supply directions of the reaction gas (a cross-sectional shape in a direction perpendicular to the paper surface of FIG. 1). May be rectangular.

  An opening is formed in the bottom wall 7 of the processing chamber 4. A susceptor 2 is disposed inside the opening. The planar shape of the opening and the susceptor 2 can be, for example, circular. A rotation shaft 3 for rotating the susceptor 2 is connected to the center of the lower surface of the susceptor 2. The upper surface of the susceptor 2 is mounted with a substrate 8 that is an object to be processed. The susceptor 2 is rotatable about the rotation shaft 3. The rotary shaft 3 is connected to a drive source such as a motor (not shown). A heater 5 for heating the substrate 8 through the susceptor 2 is disposed below the susceptor 2 (a position facing the back surface of the susceptor 2 opposite to the main surface on which the substrate 8 is mounted). A specific configuration of the heater 5 will be described later.

  A source gas (such as a source gas or a carrier gas for film formation in the vapor phase growth process) used for the vapor phase process is supplied from the reaction gas supply member 9 to the process chamber 4 as indicated by an arrow 11. The gas exhausted from the processing chamber 4 is exhausted by the gas exhaust member 10 after being used for processing as indicated by an arrow 12.

  Next, the configuration of the heater 5 will be specifically described with reference to FIG. As shown in FIG. 2, the heater 5 includes a cooling base 51, a heating lamp 56 formed so as to be in contact with the surface of the cooling base 51, a cover member 54 covering the heating lamp 56, and the inside of the cooling base 51. A pipe 61 for supplying the cooling medium 66 to the cooling medium flow path 52 formed in the above, a heat exchanger 63 and a pump 64 arranged in the middle of the path of the pipe 61, and a cooling medium in the middle of the path of the pipe 61 A temperature sensor 62 for measuring the temperature of the gas sensor, and a controller 65 electrically connected to the temperature sensor 62, the heat exchanger 63 and the pump 64 for controlling them.

  The cooling base 51 is made of any material as long as it has excellent thermal conductivity, but may be made of a metal such as aluminum or stainless steel or a ceramic such as aluminum nitride. The cooling base 51 may be composed of a base body made of metal (for example, aluminum or nickel) and a coating layer (for example, a film made of gold) formed on the surface of the base body. The coating layer can be formed by, for example, a plating method. Inside the cooling base 51, a cooling medium flow path 52 is formed for circulating a cooling medium 66 that cools the heating lamp 56 via the cooling base 51. Further, a groove 53 for arranging the heating lamp 56 is formed on the upper surface of the cooling base 51. The surface of the groove 53 is covered with a covering layer 55. As a material of the covering layer 55, any material can be used, and for example, gold, sapphire, or the like can be used. The heating lamp 56 is disposed inside the groove 53 and the surface of the heating lamp 56 is in close contact with the coating layer 55 of the groove 53. The heating lamp 56 has a configuration in which a heating wire made of tungsten or the like is disposed inside a cylindrical tube made of quartz. In this case, the outer peripheral surface of the tube made of quartz of the heating lamp 56 is in close contact with the coating layer 55.

  A cover member 54 is disposed on the upper surface of the cooling base 51 so as to cover the groove 53. The cover member 54 is made of a translucent member (for example, quartz) or a member (for example, sapphire) that is translucent and has excellent thermal conductivity.

  Pipes 61 for circulating the cooling medium 66 are connected to the cooling medium flow path 52 of the cooling base 51 at at least two places. The pipe 61 forms an annular flow path so as to be connected from the cooling medium flow path 52 in the cooling base 51 to the cooling medium flow path 52 again via the heat exchanger 63 and the pump 64. A cooling medium 66 flows through the inside of the pipe 61 as indicated by arrows 67 and 68.

  A temperature sensor 62 is disposed in a pipe 61 located on the outlet side of the cooling medium flow path 52 in the direction in which the cooling medium 66 flows. As the temperature sensor 62, a sensor having an arbitrary configuration can be used. For example, a thermocouple or the like may be used as the temperature sensor 62. Further, as the heat exchanger 63, a heat exchanger having an arbitrary configuration can be used. For example, a configuration in which a secondary cooling medium such as liquid (for example, water) or gas (for example, air) is brought into contact with the pipe 61 may be used, or from the cooling medium 66 in the pipe 61 through the wall surface of the pipe 61 using a Peltier element or the like. It is good also as a structure which takes out heat and lowers the temperature of the cooling medium 66. The control unit 65 controls the flow rate of the cooling medium 66 by controlling the delivery flow rate of the pump 64, the efficiency of heat exchange in the heat exchanger 63, or both the pump 64 and the heat exchanger 63 based on the output of the temperature sensor 62. Control the temperature.

  With such a configuration, the heating lamp 56 can be directly cooled by bringing the heating lamp 56 into contact with the cooling base 51, so that the cooling air is directly blown onto the heating lamp 56 as in the prior art. The heating lamp 56 can be cooled more efficiently than the configuration. For this reason, a blower for blowing cooling air to the heating lamp 56 as in the prior art and an air containing exhaust heat after being blown to the heating lamp 56 by the blower are discharged to the outside of the apparatus. Since it is not necessary to form a structure or the like, an increase in the size of the device can be suppressed. Further, the heat of the air including the exhaust heat affects other parts of the apparatus, so that the entire temperature environment of the vapor phase processing apparatus is greatly affected, and the temperature conditions inside the processing chamber 4 are affected. The occurrence of problems such as receiving can be suppressed.

  FIG. 3 is a schematic cross-sectional view showing a heater constituting a first modification of the vapor phase processing apparatus shown in FIGS. 1 and 2. Specifically, FIG. 3 shows a partial configuration of the heater of the first modification of the vapor phase processing apparatus according to the present invention. A first modification of the vapor phase processing apparatus according to the present invention will be described with reference to FIG.

  The vapor phase treatment apparatus including the heater 5 shown in FIG. 3 basically has the same structure as the vapor phase treatment apparatus 1 shown in FIGS. 1 and 2, but the configuration of the heater 5 is different. That is, the heater 5 of the vapor phase treatment apparatus shown in FIG. 3 basically has the same structure as that of the heater 5 shown in FIG. 2, but the coating layer 55 and the groove 53 are formed on the wall surface of the groove 53. The difference is that a base coating layer 57 is disposed between the wall surface and the wall surface. That is, on the wall surface of the groove 53, a base coating layer 57 and a multilayer film structure (two-layer structure) in which the coating layer 55 is formed on the base coating layer 57 are formed. As the base coating layer 57, for example, a film made of gold formed by a plating method or the like can be used.

  Even in such a configuration, it is possible to obtain the same effect as that of the vapor phase processing apparatus shown in FIGS.

  3 shows the configuration of the cooling base 51, the heating lamp, and the cover member 54 of the heater 5, the pipe 5 and the temperature sensor 62 as shown in FIG. The cooling system configuration such as the heat exchanger 63, the pump 64, and the control unit 65 is connected. The configuration of these cooling systems is basically the same as that shown in FIG. Further, in the heater 5 shown in FIGS. 4 to 6 described later, the cooling system is connected in the same manner as the heater 5 shown in FIG. 2 although not shown.

  Further, with respect to the heater 5 shown in FIG. 2 or FIG. 3 described above, as a method for bringing the heating lamp 56 into close contact with the surface of the coating layer 55 in the groove 53, for example, the groove 53, the coating layer 55, The surface of the heating lamp 56 and the coating layer 55 may be brought into close contact with each other by precisely controlling the dimensions such as the film thickness. Further, the heating lamp 56 may be deformed so as to follow the shape of the groove 53 afterwards. For example, after the heating lamp 56 is formed slightly smaller than the size of the groove 53 and the heating lamp 56 is arranged inside the groove 53, the heating lamp 56 is made of a material (cylindrical) that constitutes the outer shell of the heating lamp 56. You may make it heat to the temperature which becomes a little higher than the softening temperature of the quartz which comprises a tube-like tube. For example, when the cylindrical tube of the heating lamp 56 is made of quartz, the surface of the tube of the heating lamp 56 is heated by setting the temperature of the tube surface made of quartz to about 800 ° C., for example, for 5 minutes to 10 minutes. Can be brought into close contact with the surface of the coating layer 55 inside the groove 53.

  In this case, the gas of the heating lamp 56 is filled with a gas pressurized to a pressure higher than the atmospheric pressure, and the tube can be deformed so as to follow the shape of the groove 53 by the pressure of the gas. In this way, since it is not necessary to increase the processing accuracy of the grooves 53 and the like, the manufacturing cost of the heater 5 can be reduced. At this time, the heating lamp 56 and the coating layer 55 can be fixed by appropriately selecting the heating temperature and the material of the coating layer 55.

  FIG. 4 is a schematic cross-sectional view showing a heater constituting a second modification of the vapor phase processing apparatus shown in FIGS. 1 and 2. With reference to FIG. 4, the 2nd modification of the gaseous-phase processing apparatus by this invention is demonstrated.

  As shown in FIG. 4, the heater 5 constituting the second modification of the vapor processing apparatus of the present invention basically has the same structure as the heater 5 shown in FIG. The difference is that the groove 53 disposed inside is formed on the top surface of the convex portion 58 formed on the surface of the cooling base 51. In this way, since the volume of the cooling base 51 can be made smaller than that of the cooling base 51 shown in FIG. 2, the heat capacity of the cooling base 51 can be reduced. As a result, the overall heat capacity of the heater 5 can also be reduced, and the cooling or heating rate of the heater 5 can be improved.

  FIG. 5 is a schematic cross-sectional view showing a heater constituting a third modification of the vapor phase treatment apparatus shown in FIGS. 1 and 2. With reference to FIG. 5, the 3rd modification of the gaseous-phase processing apparatus by this invention is demonstrated.

  The vapor phase treatment apparatus provided with the heater 5 shown in FIG. 5 basically has the same structure as the vapor phase treatment apparatus 1 shown in FIGS. 1 and 2, but the cooling of the heater 5 as shown in FIG. The configuration of the base 51 is different. That is, as shown in FIG. 5, the upper surface of the cooling base 51 is formed substantially flat in the heater 5, and the heating lamp 56 is disposed so as to contact the upper surface of the cooling base 51. Even in such a configuration, although the cooling efficiency is lower than that of the heater 5 shown in FIG. 2, the heating lamp 56 can be directly cooled from the contact portion between the heating lamp 56 and the cooling base 51. Further, the same effect as that of the vapor phase processing apparatus shown in FIG. 2 can be obtained. In addition, since the shape of the cooling base 51 is simple, the processing cost of the cooling base 51 can be reduced, so that the manufacturing cost of the vapor phase processing apparatus can be reduced.

  FIG. 6 is a schematic cross-sectional view showing a heater constituting a fourth modified example of the vapor phase treatment apparatus shown in FIGS. 1 and 2. With reference to FIG. 6, the 4th modification of the gaseous-phase processing apparatus by this invention is demonstrated.

  The vapor phase treatment apparatus provided with the heater 5 shown in FIG. 6 basically has the same structure as the vapor phase treatment apparatus shown in FIGS. 1 and 2, but the structure of the heater 5 is as shown in FIG. Is different. Specifically, in the heater 5 shown in FIG. 6, a groove 53 having a depth smaller than the diameter of the heating lamp 56 is formed on the upper surface of the cooling base 51. For this reason, the heating lamp 56 is disposed in the groove 53, but its upper surface protrudes from the upper surface of the cooling base 51. Even with such a configuration, the heating lamp 56 can be efficiently cooled by the direct contact between the cooling base 51 and the heating lamp 56. As a result, the same effects as those of the vapor phase processing apparatus shown in FIGS. 1 and 2 can be obtained.

  In the heater 5 shown in FIGS. 4 and 6, a base coating layer may be formed between the inner wall of the groove 53 and the coating layer 55 as in the heater 5 shown in FIG. 3. Further, the coating film formed inside the groove 53 may have a multilayer structure of three or more layers. In the heater 5 shown in FIG. 5, a coating film may be formed on the upper surface of the cooling base 51 at the contact portion with the heating lamp 56. As this coating film, a multilayer structure comprising the coating layer 55 shown in FIG. 2 or the base coating layer 57 and the coating layer 55 shown in FIG. 3 may be formed. 4 to 6, the cover member 54 shown in FIG. 2 is not shown, but the cover member 54 may be disposed so as to cover the heating lamp 56 in the same manner as the heater 5 shown in FIG. .

  Although there is a part which overlaps with the description mentioned above, the characteristic structure of the gaseous-phase processing apparatus 1 as a heating apparatus according to this invention is enumerated. The vapor phase treatment apparatus 1 according to the present invention includes a heating lamp 56 as a heater for light radiation heating, and a cooling member for cooling the heating lamp 56 (cooling base 51, coating layer 55, base coating layer 57, pipe 61, temperature sensor 62. , A heat exchanger 63, a pump 64, a control unit 65, and a cooling mechanism unit including a cooling medium 66). At least a part of the outer peripheral surface of the heating lamp 56 is in contact with a cooling member (cooling mechanism).

  If it does in this way, the heating lamp 56 can be directly cooled via the contact part of the heating lamp 56 and a cooling mechanism part. For this reason, when changing the heating temperature in the heating lamp 56 (particularly when lowering the set temperature), the temperature can be changed quickly. As a result, the controllability of the heating temperature in the vapor phase processing apparatus 1 can be improved.

  In addition, since the heating lamp 56 can be directly cooled by the cooling mechanism, the heating lamp 56 is sufficiently cooled during high-temperature heating (for example, high-temperature heating at about 1200 ° C.) to keep the heating lamp 56 healthy. Is possible.

  In the gas phase processing apparatus 1, the heating lamp 56 is provided inside the groove 53 formed on the surface of the cooling mechanism (the surface of the cooling base 51) as shown in FIGS. 2, 3, 4, 6, and the like. Is arranged. In this case, since the inner wall of the groove 53 is disposed so as to surround a part of the outer periphery of the heating lamp 56, the coating layer 55 formed on the inner wall is brought into contact with the surface of the heating lamp 56, The contact area with the cooling mechanism can be increased. As a result, the heating lamp 56 can be efficiently cooled.

  Further, if a film made of a material that reflects light is formed as the covering layer 55 formed on the inner wall surface of the groove 53, the light emitted from the heating lamp 56 can be reflected to the outside of the groove 53 by the covering layer 55. it can. As a result, efficient heating can be performed.

  The gas-phase treatment apparatus 1 further includes a susceptor 2 that is disposed at a position facing the heating lamp 56 and serves as a holder for holding a heating object. In this case, by heating the susceptor 2, the substrate 8 as a heating object can be indirectly heated. In this way, since the susceptor 2 can be used as a soaking member, the entire substrate 8 can be uniformly heated.

  In the gas phase processing apparatus 1, the heating temperature of the heating lamp 56 may be 1000 ° C. or higher. In this case, the present invention is particularly effective because the soundness of the heating lamp 56 can be ensured and the temperature can be changed quickly when the heating temperature is changed at a high temperature of 1000 ° C. or higher.

  Next, a method for manufacturing a semiconductor substrate using the above-described vapor processing apparatus will be described. FIG. 7 is a flowchart for explaining a semiconductor substrate manufacturing method using the vapor phase processing apparatus according to the present invention shown in FIGS. With reference to FIG. 7, the manufacturing method of the semiconductor substrate by this invention is demonstrated.

  As shown in FIG. 7, in the method for manufacturing a semiconductor substrate according to the present invention, a substrate placement step (S10) is first performed. Specifically, in the step (S10), which is a step of placing the substrate 8 at a position facing the heating lamp 56 as a light radiation heating heater in the vapor phase processing apparatus, for example, the gas shown in FIGS. A substrate 8 as a processing object is mounted on the upper surface of the susceptor 2 of the phase processing apparatus 1.

  Next, a processing step (S20) as a step of processing the surface of the substrate 8 is performed while heating the substrate 8 with the heating lamp 56. Specifically, the substrate 8 is heated through the susceptor 2 using the heater 5, and the reaction gas is supplied from the reaction gas supply member 9 into the processing chamber 4 in a state where the substrate 8 is heated to a predetermined temperature. . In this way, an epitaxial layer 48 (see FIG. 8) is formed on the upper surface of the substrate 8. In the vapor phase treatment apparatus 1 described above, since the heating lamp 56 is directly cooled in direct contact with the cooling base 51 in the heater 5, the heating condition by the heater 5 can be changed quickly. For this reason, in the epitaxial layer 48, when epitaxial layers having different compositions are continuously formed, the change in the composition can be made steep. As a result, the substrate 49 with an epitaxial layer having excellent characteristics (see FIG. 8) can be obtained.

  Moreover, the heating temperature of the board | substrate 8 in the said process (S20) can be 1000 degreeC or more, for example. In the step (S20), a step of forming a layer containing a nitride semiconductor (for example, gallium nitride) on the surface of the substrate 8 may be performed.

  Here, FIG. 8 is a schematic perspective view showing a substrate with an epitaxial layer formed by using the method of manufacturing a semiconductor substrate shown in FIG. The substrate 49 with an epitaxial layer shown in FIG. 8 has a configuration in which an epitaxial layer 48 is formed on the surface of the substrate 8. As described above, by applying the method for manufacturing a semiconductor substrate according to the present invention, when a structure in which epitaxial layers having different compositions are stacked is formed as the epitaxial layer 48, the composition change between the epitaxial layers having different compositions is sharply changed. can do.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  INDUSTRIAL APPLICABILITY The present invention is advantageous for a vapor phase growth apparatus used for manufacturing a semiconductor substrate, particularly a vapor phase growth apparatus used for manufacturing a compound semiconductor substrate that requires processing at a relatively high temperature and a method for manufacturing a compound semiconductor substrate. Applied.

It is a cross-sectional schematic diagram which shows the gaseous-phase processing apparatus by this invention. It is a partial cross section schematic diagram which shows the structure of the heater of the gaseous-phase processing apparatus shown in FIG. FIG. 3 is a partial cross-sectional schematic view showing a heater constituting a first modification of the vapor phase treatment apparatus shown in FIGS. 1 and 2. It is a cross-sectional schematic diagram which shows the heater which comprises the 2nd modification of the gaseous-phase processing apparatus shown in FIG. 1 and FIG. It is a cross-sectional schematic diagram which shows the heater which comprises the 3rd modification of the gaseous-phase processing apparatus shown in FIG. 1 and FIG. It is a cross-sectional schematic diagram which shows the heater which comprises the 4th modification of the gaseous-phase processing apparatus shown in FIG. 1 and FIG. It is a flowchart for demonstrating the manufacturing method of the semiconductor substrate using the vapor-phase processing apparatus by this invention shown in FIGS. It is a perspective schematic diagram which shows the board | substrate with an epitaxial layer formed using the manufacturing method of the semiconductor substrate shown in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Gas phase processing apparatus, 2 susceptor, 3 Rotating shaft, 4 Processing chamber, 5 Heater, 7 Bottom wall, 8 Substrate, 9 Reaction gas supply member, 10 Gas exhaust member, 11, 12 Arrow, 48 Epitaxial layer, 49 Epitaxial layer Substrate, 51 Cooling base, 52 Cooling medium flow path, 53 Groove, 54 Cover member, 55 Cover layer, 56 Heating lamp, 57 Undercoat layer, 58 Convex part, 61 Piping, 62 Temperature sensor, 63 Heat exchanger, 64 Pump, 65 control, 66 cooling medium, 67, 68 arrows.

Claims (4)

A heater for heating light radiation;
A cooling member for cooling the light radiation heater,
A heating device, wherein at least a part of an outer peripheral surface of the light radiation heater is in contact with the cooling member.   The heating device according to claim 1, wherein the light radiation heating heater is disposed inside a groove formed on a surface of a cooling member.   The heating apparatus according to claim 1, further comprising a holder that is disposed at a position facing the light radiation heating heater to hold an object to be heated. A step of disposing a substrate at a position facing the heater for light radiation heating in the heating device according to claim 1;
And a step of treating the surface of the substrate while heating the substrate with the heater for heating light radiation.

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