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JP2009135473A5 - - Google Patents

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Publication number
JP2009135473A5
JP2009135473A5 JP2008280835A JP2008280835A JP2009135473A5 JP 2009135473 A5 JP2009135473 A5 JP 2009135473A5 JP 2008280835 A JP2008280835 A JP 2008280835A JP 2008280835 A JP2008280835 A JP 2008280835A JP 2009135473 A5 JP2009135473 A5 JP 2009135473A5
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JP
Japan
Prior art keywords
semiconductor layer
single crystal
conductivity type
forming
layer
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JP2008280835A
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JP5352190B2 (ja
JP2009135473A (ja
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Priority to JP2008280835A priority Critical patent/JP5352190B2/ja
Priority claimed from JP2008280835A external-priority patent/JP5352190B2/ja
Publication of JP2009135473A publication Critical patent/JP2009135473A/ja
Publication of JP2009135473A5 publication Critical patent/JP2009135473A5/ja
Application granted granted Critical
Publication of JP5352190B2 publication Critical patent/JP5352190B2/ja
Expired - Fee Related legal-status Critical Current
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Claims (1)

  1. 水素イオンであって質量が水素分子よりも重いクラスターイオンを前記水素イオン種の質量の総量の７０％以上含むイオンビームを単結晶半導体基板の一面から照射し、
    該単結晶半導体基板の表面から所定の深さに損傷層を形成し、
    前記単結晶半導体基板の前記クラスターイオンの照射面側に、少なくとも一導電型の第１不純物半導体層、該一導電型の第１不純物半導体層に接する第１電極、及び該第１電極上の接合層を形成し、
    絶縁表面を有する支持基板の一面に、前記単結晶半導体基板の前記接合層を密接させて設け、
    熱処理を行うことにより、前記損傷層に亀裂を生じさせ、前記支持基板上に単結晶半導体層を残存させたまま前記単結晶半導体基板を分離して除去し、
    前記単結晶半導体層の分離により露出した面側に、一導電型とは逆の導電型の第２不純物半導体層を形成し、
    半導体材料ガスを含む反応性ガスを電磁エネルギーにより分解して、前記第２不純物半導体層に接して、一導電型の第３不純物半導体層を形成し、前記第３不純物半導体層上に非単結晶半導体層を形成し、前記非単結晶半導体層上に一導電型とは逆の導電型の第４不純物半導体層を形成し、
    前記第４不純物半導体層上に第２電極を形成することを特徴とする光電変換装置の製造方法。
JP2008280835A 2007-11-09 2008-10-31 光電変換装置 Expired - Fee Related JP5352190B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008280835A JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007292650 2007-11-09
JP2007292650 2007-11-09
JP2008280835A JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Publications (3)

Publication Number Publication Date
JP2009135473A JP2009135473A (ja) 2009-06-18
JP2009135473A5 true JP2009135473A5 (ja) 2011-12-08
JP5352190B2 JP5352190B2 (ja) 2013-11-27

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JP2008280835A Expired - Fee Related JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Country Status (4)

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US (1) US8394655B2 (ja)
JP (1) JP5352190B2 (ja)
KR (1) KR101608953B1 (ja)
WO (1) WO2009060808A1 (ja)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008039461A2 (en) * 2006-09-27 2008-04-03 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof
JP5248994B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
JP5438986B2 (ja) 2008-02-19 2014-03-12 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US20140007928A1 (en) * 2012-07-06 2014-01-09 Zena Technologies, Inc. Multi-junction photovoltaic devices
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
JP2012504350A (ja) * 2008-09-29 2012-02-16 シンシリコン・コーポレーション 一体的に統合されたソーラーモジュール
US20100282314A1 (en) * 2009-05-06 2010-11-11 Thinsilicion Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
JP2012522404A (ja) * 2009-06-10 2012-09-20 シンシリコン・コーポレーション 光起電モジュール、及び複数半導体層スタックを有する光起電モジュールを製造する方法
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
KR101785997B1 (ko) 2009-10-30 2017-10-17 주식회사 골드피크이노베이션즈 무선통신 시스템에서 요소 반송파 집합 정보 전송방법 및 그 기지국, 단말의 수신방법
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
KR101832230B1 (ko) 2012-03-05 2018-04-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR20140082012A (ko) * 2012-12-21 2014-07-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR102006074B1 (ko) * 2017-10-24 2019-07-31 경희대학교 산학협력단 나노와이어 어레이를 포함하는 태양 전지 및 이의 제조 방법
FR3073081B1 (fr) * 2017-10-27 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Substrat semi-conducteur protege pour son transport et sa manipulation

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180618A (en) * 1977-07-27 1979-12-25 Corning Glass Works Thin silicon film electronic device
JPS58180069A (ja) * 1982-04-15 1983-10-21 Agency Of Ind Science & Technol 半導体装置
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
US4633034A (en) * 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Photovoltaic device and method
US4665277A (en) * 1986-03-11 1987-05-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Floating emitter solar cell
AU622617B2 (en) * 1987-07-21 1992-04-16 Canon Kabushiki Kaisha Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least Zn, Se and in an amount of 1 to 40 atomic per cent
EP0317350B1 (en) * 1987-11-20 1995-06-21 Canon Kabushiki Kaisha A pin function photovoltaic element, tandem und triple cells
JPH01227307A (ja) 1988-03-08 1989-09-11 Asahi Glass Co Ltd 透明導電体
JP2829653B2 (ja) * 1989-01-21 1998-11-25 キヤノン株式会社 光起電力素子
US5002618A (en) * 1989-01-21 1991-03-26 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film
JPH02192771A (ja) * 1989-01-21 1990-07-30 Canon Inc 光起電力素子
US5002617A (en) * 1989-01-21 1991-03-26 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film
WO1991017572A1 (en) * 1990-05-07 1991-11-14 Canon Kabushiki Kaisha Solar cell
JPH04276665A (ja) * 1991-03-04 1992-10-01 Canon Inc 集積型太陽電池
JP2761156B2 (ja) * 1992-06-30 1998-06-04 キヤノン株式会社 光起電力素子及びその製造方法、並びにそれを用いた発電装置
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
JPH0644638A (ja) 1992-07-24 1994-02-18 Sony Corp 録音装置
JP3360919B2 (ja) 1993-06-11 2003-01-07 三菱電機株式会社 薄膜太陽電池の製造方法，及び薄膜太陽電池
JPH07106617A (ja) * 1993-09-30 1995-04-21 Canon Inc 透明電極及びその形成方法並びに該透明電極を用いた太陽電池
JP3571785B2 (ja) * 1993-12-28 2004-09-29 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP2984537B2 (ja) * 1994-03-25 1999-11-29 キヤノン株式会社 光起電力素子
US5635408A (en) * 1994-04-28 1997-06-03 Canon Kabushiki Kaisha Method of producing a semiconductor device
JP3381443B2 (ja) * 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
US5736431A (en) * 1995-02-28 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for producing thin film solar battery
JPH08255762A (ja) * 1995-03-17 1996-10-01 Nec Corp 半導体デバイスの製造方法
JPH1093122A (ja) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
US6756289B1 (en) * 1996-12-27 2004-06-29 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
EP0851513B1 (en) * 1996-12-27 2007-11-21 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
JPH10335683A (ja) * 1997-05-28 1998-12-18 Ion Kogaku Kenkyusho:Kk タンデム型太陽電池およびその製造方法
JPH1140832A (ja) 1997-07-17 1999-02-12 Ion Kogaku Kenkyusho:Kk 薄膜太陽電池およびその製造方法
JPH11274539A (ja) * 1998-01-21 1999-10-08 Canon Inc 透明導電層付き基板及び光起電力素子
US6951689B1 (en) * 1998-01-21 2005-10-04 Canon Kabushiki Kaisha Substrate with transparent conductive layer, and photovoltaic element
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
US6331208B1 (en) * 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
JP2000150940A (ja) * 1998-11-18 2000-05-30 Denso Corp 半導体微粒子集合体及びその製造方法
JP4379943B2 (ja) * 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
JP2001068709A (ja) * 1999-08-30 2001-03-16 Kyocera Corp 薄膜太陽電池
JP4452789B2 (ja) * 1999-09-01 2010-04-21 独立行政法人 日本原子力研究開発機構 シリコン系結晶薄板の製造方法および光電変換素子用基板の製造方法
JP2001160540A (ja) * 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池
JP4450126B2 (ja) * 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
JP3513592B2 (ja) 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
JP2002348198A (ja) 2001-05-28 2002-12-04 Nissin Electric Co Ltd 半導体素子エピタキシャル成長用基板及びその製造方法
JP2003017723A (ja) 2001-06-29 2003-01-17 Shin Etsu Handotai Co Ltd 半導体薄膜の製造方法及び太陽電池の製造方法
JP4103447B2 (ja) 2002-04-30 2008-06-18 株式会社Ｉｈｉ 大面積単結晶シリコン基板の製造方法
JP2004014958A (ja) 2002-06-11 2004-01-15 Fuji Electric Holdings Co Ltd 薄膜多結晶太陽電池とその製造方法
JP2004087667A (ja) 2002-08-26 2004-03-18 Hitachi Cable Ltd 結晶シリコン系薄膜半導体装置の製造方法
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate
JP2004296650A (ja) * 2003-03-26 2004-10-21 Canon Inc 積層型光起電力素子
EP1624494A4 (en) * 2003-05-13 2007-10-10 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE SUBSTRATE FOR SOLAR BATTERY AND PROCESS FOR PRODUCING THE SAME
JP2005050905A (ja) * 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
JP2005268682A (ja) 2004-03-22 2005-09-29 Canon Inc 半導体基材及び太陽電池の製造方法
CN1938866A (zh) * 2004-03-31 2007-03-28 罗姆股份有限公司 叠层型薄膜太阳能电池及其制造方法
CN101512721A (zh) * 2006-04-05 2009-08-19 硅源公司 利用层转移工艺制造太阳能电池的方法和结构
KR101503675B1 (ko) * 2007-04-06 2015-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광기전력 장치 및 그 제조 방법
EP2143146A1 (en) * 2007-04-13 2010-01-13 Semiconductor Energy Laboratory Co, Ltd. Photovoltaic device and method for manufacturing the same

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