JP2009194036A - Method and apparatus for removing polymer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for removing polymer, capable of excellently removing a polymer from the surface of a substrate without causing reduction in film of an insulation film or a metal film formed on the surface of the substrate. <P>SOLUTION: The atmosphere around a substrate is replaced by a nitrogen gas atmosphere, and then, a fluorinated acid vapor for removing the polymer by an etching action is supplied to the surface of the substrate in the nitrogen gas atmosphere. In parallel to the supply of the fluorinated acid vapor, the substrate is rotated and heated. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a polymer removal method and a polymer removal apparatus for removing a polymer from a surface of a substrate. Examples of the substrate include a semiconductor wafer, a liquid crystal display substrate, a plasma display substrate, an FED (Field Emission Display) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask substrate. included.

In a multilayer wiring structure of a semiconductor device, copper wiring has been used in place of aluminum wiring in order to reduce wiring resistance. In addition, in order to reduce the capacitance between wirings, a low dielectric constant insulating film having a lower relative dielectric constant than a silicon oxide film (so-called Low-k film; a material having a lower relative dielectric constant than silicon oxide) is used as an insulating film between wirings. Has been used.
Since fine patterning by etching of the copper film is difficult, the copper wiring is formed by a so-called damascene method. That is, in the low dielectric constant insulating film, a wiring groove for embedding the copper wiring and a via hole connected to the bottom surface of the wiring groove and penetrating the low dielectric constant insulating film in the thickness direction are formed. Copper is buried in the wiring trench and the via hole all together. Thereby, a copper wiring buried in the wiring trench is obtained, and electrical connection between the lower layer copper wiring and the upper layer copper wiring is achieved via the copper buried in the via hole.

The wiring trench and the via hole are formed by forming a hard mask on the low dielectric constant insulating film and then performing dry etching to remove a portion exposed from the hard mask in the low dielectric constant insulating film. Ashing is performed after the formation of the wiring trench and the via hole, and the unnecessary hard mask is removed from the low dielectric constant insulating film. At the time of dry etching and ashing, the reaction product containing the components of the low dielectric constant insulating film and the hard mask becomes a polymer and forms the surface of the low dielectric constant insulating film (including the inner surfaces of the wiring grooves and via holes). Adhere to. Therefore, after ashing, a polymer removing liquid is supplied to the substrate (semiconductor wafer), and a polymer removing process for removing the polymer from the substrate is performed.
JP 2003-174018 A

In the polymer removal treatment, for example, a chemical solution that can remove the polymer by an etching action is used as the polymer removal solution. In this case, in order to remove the polymer without leaving it, the chemical solution needs to have a high etching ability.
However, when a chemical solution having a high etching ability is used, the low dielectric constant insulating film is eroded by the chemical solution, and the low dielectric constant insulating film is reduced. In addition, when a polymer removal process using a chemical solution having a high etching ability is performed in an atmosphere containing oxygen, a portion exposed from the low dielectric constant insulating film in the copper wiring is oxidized, and the oxidized portion is caused by the chemical solution. There is also the problem of being eroded.

  Accordingly, an object of the present invention is to provide a polymer removal method and a polymer removal method that can satisfactorily remove the polymer from the surface of the substrate without causing film loss such as an insulating film or a metal film formed on the surface of the substrate. Is to provide a device.

  In order to achieve the above object, an invention according to claim 1 is a polymer removal method for removing a polymer from a surface of a substrate, wherein the atmosphere surrounding the substrate is replaced with an inert gas atmosphere. And a substrate rotation step for rotating the substrate, a substrate heating step for heating the substrate, and the inert gas atmosphere, and in parallel with the substrate rotation step and the substrate heating step, And a vapor supply step of supplying a vapor containing a chemical for removing the polymer to the surface.

According to this method, after the atmosphere around the substrate is replaced with the inert gas atmosphere, the chemical-containing vapor for removing the polymer (by etching action) is removed from the surface of the substrate in the inert gas atmosphere. Supplied. In parallel with the supply of the vapor, the substrate is rotated and heated.
By rotating the substrate, the vapor containing the chemical solution is supplied uniformly over the entire surface of the substrate. In addition, since the etching rate is highly temperature-dependent in etching with chemical solution, the heating rate of the substrate increases the etching rate of the polymer, and the etching rate of the insulating film formed on the surface of the substrate decreases. Can do. Furthermore, the supply of vapor containing a chemical solution in an inert gas atmosphere prevents oxidation of an insulating film or a metal film formed on the surface of the substrate. As a result, the polymer can be satisfactorily removed from the surface of the substrate without causing film loss such as an insulating film or a metal film. In addition, in the treatment using the vapor containing the chemical liquid, the consumption of the chemical liquid is small, so that the process cost can be remarkably suppressed.

The vapor containing the chemical liquid may be a vapor of the chemical liquid itself (chemical liquid vapor), or may be a mixture of the chemical liquid vapor in a carrier gas such as an inert gas.
The method for removing a polymer according to claim 2, wherein after the vapor supply step, the post-treatment atmosphere replacement step of substituting the atmosphere around the substrate with an inert gas atmosphere, and after the vapor supply step, the substrate It is preferable to further include a substrate cooling step for cooling the substrate.

After the supply of the vapor containing the chemical solution to the surface of the substrate is completed, the atmosphere around the substrate is replaced with an inert gas atmosphere. Accordingly, since the vapor containing the chemical solution is excluded from the periphery of the substrate, the vapor containing the chemical solution is prevented from flowing out of the processing chamber when the substrate is unloaded from the processing chamber in which the substrate is accommodated. be able to.
Further, when the substrate heated at the time of supplying the vapor containing the chemical solution is carried out of the processing chamber with a high temperature, the temperature of the substrate rapidly decreases to room temperature (about 23 ° C.) outside the processing chamber and is formed on the surface of the substrate. The metal film is oxidized. Since the substrate is cooled after the supply of the vapor containing the chemical liquid to the surface of the substrate is completed, if the substrate is taken out of the processing chamber after the cooling, the temperature of the substrate can be prevented from rapidly decreasing outside the processing chamber. It is possible to prevent the oxidation of the metal film or the like due to the rapid decrease in temperature.

The substrate cooling step may be performed in parallel with the post-treatment atmosphere replacement step. Thereby, the time required for a series of processes including the post-process atmosphere replacement process and the substrate cooling process can be shortened.
According to a third aspect of the present invention, in the substrate cooling step, a cooling gas may be supplied to the substrate. That is, the cooling of the substrate may be achieved by supplying the cooling gas to the substrate. In addition, when the cooling gas is an inert gas, by supplying the cooling gas, the substrate can be cooled and the atmosphere around the substrate can be replaced with an inert gas atmosphere.

  The invention described in claim 4 is a polymer removal apparatus for removing a polymer from the surface of a substrate, wherein the atmosphere replacement mechanism replaces the atmosphere around the substrate with an inert gas atmosphere, and the inert gas atmosphere. A substrate rotating mechanism that rotates the substrate placed underneath, a substrate heating mechanism that heats the substrate placed under the inert gas atmosphere, a substrate rotating mechanism that is rotated by the substrate rotating mechanism, and And a vapor supply mechanism for supplying a vapor containing a chemical for removing the polymer to the surface of the substrate being heated.

  In this polymer removing apparatus, the polymer removing method according to claim 1 can be carried out. As a result, an effect similar to the effect described in relation to claim 1 can be obtained.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic cross-sectional view of a polymer removing apparatus according to an embodiment of the present invention.
The polymer removing apparatus 1 is used to remove a polymer from a semiconductor wafer (hereinafter simply referred to as “wafer”) W as an example of a substrate.
The polymer removal apparatus 1 includes a processing chamber 11 having a substantially rectangular parallelepiped shape.

In the processing chamber 11, a wafer holding table 12 for holding one wafer W in a mounted state is provided. The wafer holder 12 is fixed to the upper end of a rotating shaft 13 that extends in the vertical direction. The rotation shaft 13 is coupled with a wafer rotation mechanism 14 that rotates the rotation shaft 13 around its central axis. Wafer rotation mechanism 14 includes a motor and the like.
A heater 15 for heating the wafer W held on the wafer holding table 12 is embedded in the wafer holding table 12. Further, on the wafer holding table 12, there is provided a soaking ring 16 for making the temperature of the substrate uniform in the plane during heating by the heater 15 (in order to reduce the temperature distribution difference in the plane of the wafer W). It has been. The soaking ring 16 is formed in a ring shape surrounding the holding position (mounting position) of the wafer W on the wafer holding table 12.

  In relation to the wafer holding table 12, a plurality of (for example, three) lift pins 17 for raising and lowering the wafer W with respect to the wafer holding table 12 are provided. The plurality of lift pins 17 are inserted into the bottom wall 18 of the processing chamber 11 and supported by a common support member 19 outside the processing chamber 11. A lift pin lifting mechanism 20 including a cylinder and the like is coupled to the support member 19. By the lift pin lifting mechanism 20, the plurality of lift pins 17 are lifted and lowered integrally between a position where the tips protrude above the wafer holding table 12 and a position where the lift pins 17 retract below the wafer holding table 12.

  A gate 22 for loading / unloading the wafer W into / from the processing chamber 11 is formed on the side wall 21 on one side of the processing chamber 11. A gate shutter 23 for opening and closing the gate 22 is provided outside the side wall 21. A gate opening / closing mechanism 24 including a cylinder or the like is coupled to the gate shutter 23. The gate opening / closing mechanism 24 causes the gate shutter 23 to be in close contact with the outer surface of the side wall 21, and a closed position for sealing the gate 22, and an open position for lowering the side of the side wall 21 and opening the gate 22 greatly. And displaced.

A side introduction pipe 26 for introducing nitrogen gas into the processing chamber 11 is provided through the side wall 25 facing the side wall 21 of the processing chamber 11. Nitrogen gas (N ₂ ) is supplied to the side introduction pipe 26 via a side nitrogen gas valve 27. The end surface of the side introduction pipe 26 facing the processing chamber 11 is substantially flush with the inner surface of the side wall 25. The inner surface of the side wall 25 is provided with a diffusion plate 28 having a size covering almost the entire inner surface. The diffusion plate 28 has a large number of discharge ports (not shown) that face the processing chamber 11. The nitrogen gas supplied to the side introduction pipe 26 is dispersed and discharged from a number of discharge ports of the diffusion plate 28, so that in the processing chamber 11, in a plane parallel to the inner surface of the side wall 25 (of the wafer W). It diffuses in the form of a shower with a substantially uniform flow velocity in a plane perpendicular to the surface).

An upper introduction pipe 30 for selectively introducing hydrofluoric acid vapor (HF vapor), helium gas (He) and nitrogen gas (N ₂ ) into the processing chamber 11 through the upper wall 29 of the processing chamber 11 is provided. Is provided. The upper introduction pipe 30 is selectively supplied with hydrofluoric acid paper, helium gas, and nitrogen gas through a hydrofluoric acid vapor valve 31, a helium gas valve 32, and an upper nitrogen gas valve 33, respectively. The end surface of the upper introduction pipe 30 facing the processing chamber 11 is substantially flush with the inner surface of the upper wall 29. A disc-shaped diffusion plate 34 having a larger diameter than the wafer W is provided on the inner surface of the upper wall 29. The diffusion plate 34 has a large number of discharge ports (not shown) that face the processing chamber 11. The hydrofluoric acid paper, helium gas, and nitrogen gas that are selectively supplied to the upper introduction pipe 30 are dispersed and discharged from a large number of discharge ports of the diffusion plate 34, so that the upper wall 29 in the processing chamber 11 is discharged. It diffuses in the form of a shower having a substantially uniform flow velocity in a plane parallel to the inner surface (in a plane parallel to the surface of the wafer W).

  On the bottom wall 18 of the processing chamber 11, a peripheral exhaust port 35 having an annular shape in plan view surrounding the periphery of the wafer holding table 12 is formed. Connected to the surrounding exhaust port 35 is a proximal end of an exhaust pipe 36 whose tip is connected to an exhaust source (not shown). A peripheral exhaust valve 37 is interposed in the middle of the exhaust pipe 36. When the ambient exhaust valve 37 is opened, the atmosphere in the processing chamber 11 is exhausted from the ambient exhaust port 35, and when the ambient exhaust valve 37 is closed, exhaust from the ambient exhaust port 35 is stopped.

  Further, a gate-side exhaust port 38 having a substantially rectangular shape in plan view extending along the side wall 21 is formed in the bottom wall 18 of the processing chamber 11 between the peripheral exhaust port 35 and the gate 22 (side wall 21). . A base end of an exhaust pipe 39 having a distal end connected to an exhaust source (not shown) is connected to the gate side exhaust port 38. A gate side exhaust valve 40 is interposed in the middle of the exhaust pipe 39. When the gate side exhaust valve 40 is opened, the atmosphere in the processing chamber 11 is exhausted from the gate side exhaust port 38, and when the gate side exhaust valve 40 is closed, exhaust from the gate side exhaust port 38 is stopped.

FIG. 2 is a block diagram showing an electrical configuration of the polymer removing apparatus.
The polymer removal apparatus 1 includes a control unit 41 configured with, for example, a microcomputer. The microcomputer includes a CPU, RAM, ROM, and the like.
The control unit 41 controls the driving of the wafer rotation mechanism 14, the heater 15, the lift pin lifting mechanism 20 and the gate opening / closing mechanism 24 according to a predetermined program, and the side nitrogen gas valve 27, the hydrofluoric acid vapor valve 31, the helium gas valve 32, The opening and closing of the upper nitrogen gas valve 33, the surrounding exhaust valve 37, and the gate side exhaust valve 40 are controlled.

FIG. 3 is a diagram showing the flow of each step of the polymer removal method performed by the polymer removal apparatus.
For example, a wafer W that has undergone dry etching and ashing for forming a fine pattern is carried into the polymer removing apparatus 1 (processing chamber 11) by a transfer hand (not shown) in order to remove the polymer from the surface. (Step S1: Wafer loading).

  Prior to the loading of the wafer W, the gate opening / closing mechanism 24 is driven, the gate shutter 23 is displaced to the open position, and the gate 22 is opened. While the gate 22 is opened, the side nitrogen gas valve 27 is opened, and nitrogen gas is introduced into the processing chamber 11 from the side introduction pipe 26. Further, the gate side exhaust valve 40 is opened, and the atmosphere in the processing chamber 11 is exhausted from the gate side exhaust port 38. As a result, an air flow of nitrogen gas is formed in the processing chamber 11 from the side opposite to the gate 22 of the wafer holder 12, that is, from the side wall 25 to the gate 22, and this air flow creates an atmosphere outside the processing chamber 11. Inflow into the processing chamber 11 is prevented. At this time, the hydrofluoric acid vapor valve 31, the helium gas valve 32, the upper nitrogen gas valve 33, and the surrounding exhaust valve 37 are closed.

Prior to the loading of the wafer W, the lift pin raising / lowering mechanism 20 is driven, and the lift pin 17 is disposed at a position where the tip of the lift pin 17 protrudes above the wafer holding table 12. Then, the wafer W carried into the processing chamber 11 by the transfer hand is transferred from the transfer hand onto the lift pins 17.
Thereafter, when the transfer hand is retracted from the processing chamber 11, the gate opening / closing mechanism 24 is driven, the gate shutter 23 is displaced to the closed position, and the gate 22 is sealed by the gate shutter 23. When the gate 22 is sealed, the side nitrogen gas valve 27 and the gate side exhaust valve 40 are closed, and the upper nitrogen gas valve 33 and the surrounding exhaust valve 37 are opened. Thereby, nitrogen gas is introduced into the processing chamber 11 from the upper introduction pipe 30 and the atmosphere in the processing chamber 11 is rapidly exhausted from the surrounding exhaust port 35. As a result, the atmosphere in the processing chamber 11 is replaced with the nitrogen gas atmosphere introduced from the upper introduction pipe 30 in a short time (step S2: atmosphere replacement before processing).

In parallel with the replacement of the atmosphere in the processing chamber 11 with the nitrogen gas atmosphere, the lift pin raising / lowering mechanism 20 is driven, and the lift pin 17 is lowered to a position where the tip of the lift pin 17 is retracted below the wafer holder 12. As the lift pins 17 are lowered, the wafer W on the lift pins 17 is transferred onto the wafer holder 12.
Thereafter, the upper nitrogen gas valve 33 is closed and the hydrofluoric acid vapor valve 31 is opened. As a result, the hydrofluoric acid vapor is introduced into the processing chamber 11 from the upper introduction pipe 30, and this hydrofluoric acid vapor is supplied to the surface of the wafer W (step S3: HF vapor processing). As a result, the polymer is removed from the surface of the wafer W by the etching action of the hydrofluoric acid vapor.

In parallel with the supply of hydrofluoric acid vapor, the wafer rotation mechanism 14 is driven to rotate the wafer W (step S31: wafer rotation). The rotation speed of the wafer W is, for example, 150 rpm. By rotating the wafer W, the hydrofluoric acid paper is supplied uniformly over the entire surface of the wafer W.
In parallel with the supply of hydrofluoric acid paper, the heater 15 is driven to heat the wafer W (step S32: wafer heating). By this heating, the temperature of the wafer W rises to 40 ° C., for example. In order to improve the in-plane uniformity of the temperature of the wafer W, the portion of the wafer holder 12 that faces the wafer W is divided into a plurality of regions, and heaters 15 are embedded in each region. The temperature may be individually controlled.

  When the supply of the hydrofluoric acid vapor is performed for a predetermined time, the lift pin raising / lowering mechanism 20 is driven, the lift pins 17 are raised, and the wafer W is separated upward from the wafer holder 12 (for example, a transfer hand (not shown)). To a position where the wafer W can be delivered). Then, the hydrofluoric acid vapor valve 31 is closed and the helium gas valve 32 is opened. At this time, the surrounding exhaust valve 37 remains open. As a result, helium gas at normal temperature (same as room temperature; about 23 ° C.) is introduced from the upper introduction tube 30 into the processing chamber 11, and this helium gas is supplied to the surface of the wafer W. As a result, the high temperature wafer W is cooled by normal temperature helium gas (step S4: wafer cooling).

  When the temperature of the wafer W decreases to about room temperature, the helium gas valve 32 is closed, the upper nitrogen gas valve 33 is opened, and nitrogen gas is introduced into the processing chamber 11 from the upper introduction pipe 30. At this time, the surrounding exhaust valve 37 remains open. Therefore, the atmosphere in the processing chamber 11 is rapidly replaced with the atmosphere of nitrogen gas introduced from the upper introduction tube 30 (step S5: atmosphere replacement after processing).

  When the atmosphere in the processing chamber 11 is replaced with a nitrogen gas atmosphere, the gate opening / closing mechanism 24 is driven, the gate shutter 23 is displaced to the open position, and the gate 22 is opened. When the gate 22 is opened, the upper nitrogen gas valve 33 and the surrounding exhaust valve 37 are closed, and the side nitrogen gas valve 27 and the gate side exhaust valve 40 are opened. As a result, an air flow of nitrogen gas from the side wall 25 side to the gate 22 is formed in the processing chamber 11, and this air flow prevents the atmosphere outside the processing chamber 11 from flowing into the processing chamber 11. In this state, the wafer W on the lift pins 17 is unloaded from the processing chamber 11 by a transfer hand (not shown) (Step S6: Wafer unloading).

  The wafer W carried out from the processing chamber 11 is carried into a rinsing / drying processing chamber (not shown). Then, in the rinsing / drying processing chamber, a rinsing liquid (for example, pure water) is supplied to the surface of the wafer W, so that hydrofluoric acid is washed away from the surface of the wafer W. Thereafter, in the rinsing / drying processing chamber, the rinsing liquid is removed from the surface of the wafer W by rotating the wafer W at a high speed.

As described above, after the atmosphere around the wafer W is replaced with the nitrogen gas atmosphere, the hydrofluoric acid vapor for removing the polymer by the etching action is supplied to the surface of the wafer W under the nitrogen gas atmosphere. In parallel with the supply of the hydrofluoric acid vapor, the wafer W is rotated and heated.
By rotating the wafer W, the hydrofluoric acid vapor is supplied uniformly over the entire surface of the wafer W. In addition, in etching using hydrofluoric acid vapor, the temperature dependence of the etching rate is extremely large, so that the etching rate of the polymer is increased by heating the wafer W, and an insulating film (for example, a low dielectric constant is formed on the surface of the wafer W). The etching rate of the insulating film can be reduced. Furthermore, the supply of hydrofluoric acid vapor in a nitrogen gas atmosphere prevents oxidation of the insulating film or metal film formed on the surface of the wafer W. As a result, the polymer can be satisfactorily removed from the surface of the wafer W without causing film loss such as an insulating film or a metal film. In addition, in the treatment using hydrofluoric acid vapor, the consumption of hydrofluoric acid is small, so that the process cost can be remarkably suppressed.

After the supply of hydrofluoric acid vapor to the surface of the wafer W is completed, the atmosphere around the wafer W is replaced with a nitrogen gas atmosphere. As a result, the hydrofluoric acid vapor is removed from the periphery of the wafer W, so that the hydrofluoric acid vapor flows out of the processing chamber 11 when the wafer W is unloaded from the processing chamber 11 in which the wafer W is accommodated. Can be prevented.
Further, when the wafer W heated at the time of supplying the hydrofluoric acid vapor is unloaded from the processing chamber 11 at a high temperature, the temperature of the wafer W rapidly decreases to room temperature (about 23 ° C.) outside the processing chamber 11. The metal film formed on the surface of the metal oxidizes. Since the wafer W is cooled after the supply of the hydrofluoric acid vapor to the surface of the wafer W is completed, if the wafer W is unloaded from the processing chamber 11 after the cooling, the temperature of the wafer W rapidly decreases outside the processing chamber 11. It is possible to prevent oxidation of the metal film or the like due to a rapid decrease in temperature.

  In order to cool the wafer W, the normal temperature helium gas is supplied to the wafer W. However, the cooling gas for cooling the wafer W is not limited to the normal temperature helium gas. Other types of inert gas such as nitrogen gas may be used. For example, if the cooling gas is nitrogen gas, the nitrogen gas is supplied into the processing chamber 11 after the supply of the hydrofluoric acid vapor to the wafer W is completed, whereby the wafer W is cooled and the atmosphere around the wafer W is changed. Replacement to a nitrogen gas atmosphere can be achieved. As a result, the time required for a series of processes for removing the polymer from the surface of the wafer W can be shortened.

Examples of the inert gas introduced into the processing chamber 11 include a mixed gas of nitrogen gas and helium, an argon gas, a mixed gas of nitrogen gas and hydrogen gas, and the like in addition to nitrogen gas and helium gas. .
Further, in addition to the cooling of the wafer W by the cooling gas, a cooling device 42 is provided on the upper wall 29 of the processing chamber 11 as indicated by a two-dot chain line in FIG. May be cooled entirely. Further, instead of cooling the wafer W with the cooling gas, a quartz plate (FIG. 4) made of a quartz plate maintained at a low temperature on the wafer W lifted by the lift pins 17 to a position spaced upward with respect to the wafer holding table 12. The wafer W may be cooled by facing each other. The cooling device 42 and the quartz plate may include a cooling pipe through which cooling water is circulated, or may include a Peltier element.

  The cooling of the wafer W may be performed for a preset time, or a temperature sensor for detecting the temperature of the wafer W is provided in the processing chamber 11, and the wafer W is cooled until the temperature detected by the temperature sensor drops to room temperature. It may be broken. As such a temperature sensor, for example, a sensor (contact type) that is provided on the wafer holder 12 and detects the temperature of the wafer W by contacting the wafer W may be used. A configuration (radiation type) that is provided separately and detects the temperature of the wafer W in a non-contact state may be used.

In addition, a method of supplying vapor of hydrofluoric acid as an example of a chemical solution to the surface of the wafer W and removing the polymer from the surface of the wafer W has been taken up. However, as the chemical solution, ammonium hydroxide (NH ₄ OH), hydrochloric acid (HCl), ammonium fluoride _(NH 4 F), tetramethyl ammonium hydroxide (TMAH), sulfuric acid _(H 2 _SO 4), can be exemplified nitrate (HNO _3).

  In addition, various design changes can be made within the scope of the matters described in the claims.

FIG. 1 is a schematic cross-sectional view of a polymer removing apparatus according to an embodiment of the present invention. FIG. 2 is a block diagram showing an electrical configuration of the polymer removing apparatus. FIG. 3 is a diagram showing the flow of each step of the polymer removal method performed by the polymer removal apparatus.

Explanation of symbols

1 Polymer removal device 12 Wafer holder (substrate rotation mechanism)
13 Rotating shaft (Substrate rotating mechanism)
14 Wafer rotation mechanism (substrate rotation mechanism)
15 Heater (substrate heating mechanism)
30 Upper introduction pipe (atmosphere replacement mechanism, steam supply mechanism)
31 Fluoric acid vapor valve (steam supply mechanism)
33 Upper nitrogen gas valve (atmosphere replacement mechanism)
35 Ambient exhaust port (atmosphere replacement mechanism)
36 Exhaust pipe (atmosphere replacement mechanism)
37 Ambient exhaust valve (atmosphere replacement mechanism)
W wafer

Claims (4)

A polymer removal method for removing polymer from the surface of a substrate, comprising:
An atmosphere replacement step of replacing the atmosphere around the substrate with an inert gas atmosphere;
A substrate rotating step of rotating the substrate;
A substrate heating step for heating the substrate;
A vapor supply step that starts under the inert gas atmosphere and supplies a vapor containing a chemical solution for removing the polymer to the surface of the substrate in parallel with the substrate rotation step and the substrate heating step. , Polymer removal method. After the vapor supply step, a post-treatment atmosphere replacement step of replacing the atmosphere around the substrate with an inert gas atmosphere;
The polymer removal method according to claim 1, further comprising a substrate cooling step of cooling the substrate after the vapor supply step.   The polymer removal method according to claim 2, wherein a cooling gas is supplied to the substrate in the substrate cooling step. A polymer removal apparatus for removing polymer from the surface of a substrate,
An atmosphere replacement mechanism that replaces the atmosphere around the substrate with an inert gas atmosphere;
A substrate rotating mechanism for rotating the substrate placed in the inert gas atmosphere;
A substrate heating mechanism for heating the substrate placed in the inert gas atmosphere;
A polymer removal apparatus comprising: a vapor supply mechanism that supplies a vapor containing a chemical for removing the polymer to the surface of the substrate rotated by the substrate rotation mechanism and heated by the substrate heating mechanism .

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