JP2009190349A - Manufacturing method of liquid jet head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a liquid jet head in which a manufacturing process is simplified, the deterioration of jet characteristics due to the shift of each component member is reduced, and deformation and peeling caused by a thermal expansion coefficient difference due to a difference between the materials of a flow path forming substrate and a nozzle plate is small so that the deterioration of the jet characteristics is reduced. <P>SOLUTION: A nozzle forming layer 20 is formed on the flow path forming substrate 10, then, a nozzle opening 21 is formed in the nozzle forming layer 20 and then, a pressure generating chamber 12 is formed, so that it is unnecessary that the nozzle plate in which the nozzle opening 21 is formed is adhered. Thus, the manufacturing method of an ink type recording head 1 whose structure is simple and positional deviation is small can be obtained. The materials of the nozzle forming layer 20 and the flow path forming substrate 10 are the same, that is, silicon, so that a thermal expansion difference is small and the deformation and peeling caused by a temperature difference can be reduced. Thus, the manufacturing method of an ink jet type recording head 1 stable in jetting characteristics can be obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a liquid ejecting head, and in particular, a part of a pressure generating chamber communicating with a nozzle opening for ejecting ink droplets is configured by a diaphragm, and a piezoelectric element is formed on the surface of the diaphragm, The present invention relates to a method of manufacturing an ink jet recording head that ejects ink droplets by displacement of a piezoelectric element.

As an ink jet recording head, a flow path forming substrate provided with at least two rows of pressure generation chambers communicating with nozzle openings formed in a nozzle plate, and a piezoelectric element side provided on the flow path forming substrate are joined to each other, In addition, a structure having a bonding substrate on which a driving IC for driving a piezoelectric element is mounted is known.
As a manufacturing method of the nozzle plate and the flow path forming substrate, a nozzle plate in which a nozzle opening is formed by processing such as pressing on a metal plate surface, and an Si flow path for an ink flow path by anisotropic etching on a Si substrate having a crystal orientation <110> A method of bonding a flow path forming substrate on which a pressure chamber is formed is known (for example, see Patent Document 1).
As a manufacturing method of the nozzle plate, in addition to pressing, the Si wafer is anisotropically etched to form a nozzle plate opening, or a nozzle plate is formed, or a stainless steel thin plate is drilled with a YAG laser or the like, A method of forming a nozzle plate by drilling a hole that is a nozzle opening is known (see Patent Document 1).
In addition, a cavity that is a pressure generating chamber is formed in a silicon substrate by etching, and a nozzle plate in which a plurality of nozzles for ink ejection are formed by drilling a stainless material on the opening surface side of the silicon substrate is used with an epoxy adhesive There is known a method for joining them (see, for example, Patent Document 2).

JP-A-6-55733 (page 4, FIG. 4) JP-A-6-143590 (page 3, FIG. 1)

  Since the flow path forming substrate, the nozzle plate, and the bonding substrate are bonded together with an adhesive, the process becomes complicated and the jetting characteristics are deteriorated due to a shift during bonding. Further, due to the difference in thermal expansion coefficient due to the difference in material between the flow path forming substrate and the nozzle plate, deformation and peeling occur due to the temperature difference, and the jetting characteristics are deteriorated.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

[Application Example 1]
A flow path forming substrate having a row of pressure generation chambers communicating with the nozzle openings, a piezoelectric element provided to the pressure generation chamber via a vibration plate, and a joint sandwiching the piezoelectric element with the vibration plate And a step of forming a nozzle forming layer in the silicon single crystal substrate, a step of forming the nozzle opening in the nozzle forming layer, and etching the silicon single crystal substrate. And a step of forming the pressure generating chamber.

  According to this application example, after the nozzle formation layer is formed on the silicon single crystal substrate, the nozzle openings are formed in the nozzle formation layer. After that, since the pressure generating chamber is formed, it is not necessary to bond the nozzle plate in which the nozzle openings are formed, and a method for manufacturing a liquid ejecting head with a simple structure and less positional deviation can be obtained.

[Application Example 2]
The method of manufacturing a liquid jet head, wherein the nozzle forming layer is a silicon layer.
In this application example, since the nozzle forming layer and the flow path forming substrate are the same silicon, there is little difference in thermal expansion, and there can be obtained a method for manufacturing a liquid jet head with stable jetting characteristics with little deformation and peeling due to temperature differences.

[Application Example 3]
In the method of manufacturing the liquid ejecting head, the step of forming the vibration plate and the piezoelectric element on a supporting substrate, and the bonding substrate having a piezoelectric element holding portion for sealing the piezoelectric element as the vibration plate. A method for manufacturing a liquid jet head, comprising: a step of heat-bonding; and a step of removing the supporting substrate.
In this application example, a bonded substrate is obtained in which a piezoelectric element is sandwiched between diaphragms and held by a piezoelectric element holding portion.

[Application Example 4]
A method of manufacturing a liquid ejecting head, comprising the step of bonding the flow path forming substrate to the bonding substrate having the vibration plate and the piezoelectric element.
In this application example, since the flow path forming substrate having the nozzle openings and the bonding substrate having the piezoelectric elements and the diaphragm are bonded, it is not necessary to bond the nozzle plate having the nozzle openings, and the structure is simple and positioned. A manufacturing method of a liquid jet head with little deviation is obtained.

[Application Example 5]
The method for manufacturing a liquid jet head according to the above, wherein the adhesive to be bonded in the bonding step is an epoxy adhesive.
In this application example, a method of manufacturing a liquid ejecting head that can easily and reliably bond the vibration plate and the flow path forming substrate is obtained.

[Application Example 6]
A method of manufacturing a liquid jet head according to the above-described method, wherein the steps are performed on a silicon single crystal wafer and then divided.
In this application example, each member is aligned in a wafer state, and then divided to obtain a liquid ejecting head. Therefore, there is no need to perform individual alignment, and the liquid ejecting head with high manufacturing efficiency and low positional deviation is obtained. The manufacturing method is obtained.

Hereinafter, embodiments will be described in detail with reference to the drawings.
FIG. 1 is an exploded perspective view showing an outline of an ink jet recording head 1 as a liquid ejecting head according to the embodiment. FIG. 2A is a plan view of FIG. 1, and FIG. It is AA sectional drawing of).

In FIG. 1, the ink jet recording head 1 includes a flow path forming substrate 10, a nozzle forming layer 20, and a bonding substrate 30. The flow path forming substrate 10 is sandwiched between the nozzle forming layer 20 and the bonding substrate 30.
1 and 2, the flow path forming substrate 10 has a pressure generation chamber 12 partitioned by a plurality of partition walls 11 in the width direction by anisotropically etching a silicon single crystal substrate from one surface side thereof. It is installed side by side. Further, a communication portion 13 is formed on the outer side in the longitudinal direction of the pressure generation chamber 12, and communicates via an ink supply path 14 at one longitudinal end portion of each pressure generation chamber 12. The ink supply path 14 is formed on the bonding substrate 30 side of the flow path forming substrate 10.

  As the thickness of the flow path forming substrate 10 on which the pressure generation chambers 12 and the like are formed, it is preferable to select an optimum thickness according to the density at which the pressure generation chambers 12 are disposed. For example, when the pressure generating chambers 12 are arranged at about 180 (180 dpi) per inch, the thickness of the flow path forming substrate 10 is preferably about 180 to 280 μm, more preferably about 220 μm. is there. For example, when the pressure generating chambers 12 are arranged at a relatively high density of about 360 dpi, the thickness of the flow path forming substrate 10 is preferably 100 μm or less. This is because the arrangement density can be increased while maintaining the rigidity of the partition wall 11 between the adjacent pressure generation chambers 12.

  On the opposite side of the flow path forming substrate 10 to the bonding substrate 30, a nozzle forming layer 20 is formed in which nozzle openings 21 communicating with the pressure supply chambers 12 on the opposite side of the ink supply path 14 are formed.

Between the flow path forming substrate 10 and the bonding substrate 30, a silicon nitride layer 50 as an etching stopper layer, an elastic film 51 having a thickness of 1 to ₂ μm made of silicon dioxide (SiO ₂ ), and a zirconium dioxide layer 52 are laminated. Is formed.
An adhesive layer 1000 is provided between the silicon nitride layer 50 and the flow path forming substrate 10. Here, the silicon nitride layer 50 may be omitted.
In the present embodiment, the flow path forming substrate 10 is composed of a silicon single crystal substrate having a plane orientation (110).

  The zirconium dioxide layer 52 includes a lower electrode film 60 made of a metal such as platinum (Pt) or a metal oxide such as strontium ruthenate (SrRuO), a piezoelectric layer 70 having a perovskite structure, and a metal such as Au or Ir. The upper electrode film 80 is formed to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80.

  In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In either case, a piezoelectric active part is formed for each pressure generating chamber.

  Further, here, the piezoelectric element 300 and the diaphragm that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator. In the example described above, the lower electrode film 60, the silicon nitride layer 50, the elastic film 51, and the zirconium dioxide layer 52 of the piezoelectric element 300 function as the diaphragm 53.

  In addition, a lead electrode 90 made of, for example, gold (Au) or the like is connected to the upper electrode film 80 of each piezoelectric element 300 as described above. The lead electrode 90 is drawn from the vicinity of the end in the longitudinal direction of each piezoelectric element 300 and extends to the vicinity of the end of the flow path forming substrate 10. Although not shown, for example, the piezoelectric element is driven by wire bonding or the like. Connected to a driving IC or the like.

  A bonding substrate 30 having a piezoelectric element holding portion 31 capable of sealing the space is secured to the piezoelectric element 300 side of the flow path forming substrate 10 in a state in which a space that does not hinder the movement of the piezoelectric element 300 is secured. The element 300 is formed in the piezoelectric element holding portion 31. As such a bonding substrate 30, it is preferable to use substantially the same material as the thermal expansion coefficient of the flow path forming substrate 10, for example, glass, ceramic material, etc., and in this embodiment, the same material as the flow path forming substrate 10. The silicon single crystal substrate was used. In addition, the bonding substrate 30 is provided with a reservoir portion 32 that constitutes at least a part of the reservoir 150 serving as an ink chamber common to the pressure generation chambers 12. The reservoir portion 32 is a communication portion of the flow path forming substrate 10. 13, a reservoir 150 is formed which serves as a common ink chamber for the pressure generating chambers 12.

  Further, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded to the bonding substrate 30. The sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm). The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). An opening 43 that is completely removed in the thickness direction is formed in a region of the fixing plate 42 that faces the reservoir 150, and one surface of the reservoir 150 is sealed only with a flexible sealing film 41. ing.

  Such an ink jet recording head 1 takes in ink from an external ink supply means (not shown), fills the interior from the reservoir 150 to the nozzle opening 21, and then follows a recording signal from a drive circuit (not shown). By applying a voltage between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 via an external wiring and bending the diaphragm 53, the pressure in each pressure generation chamber 12 is changed. Increases and ink droplets are ejected from the nozzle openings 21.

Hereinafter, a method for manufacturing the ink jet recording head 1 according to the present embodiment will be described.
FIG. 3 is a perspective view showing a method for manufacturing the ink jet recording head 1.
The ink jet recording head 1 is formed by bonding the flow path forming wafer plate 100 on which the constituent elements are formed and the bonded wafer substrate 301 with the adhesive layer 1000, then cutting the broken line shown in the figure and separating it. can get. Reference numerals 500, 510, and 520 in the figure represent layers that become the silicon nitride layer 50, the elastic film 51, and the zirconium dioxide layer 52 after cutting. These layers will be described later.

  FIG. 4 shows a process for forming the flow path forming wafer plate 100, and FIGS. 5 to 7 show a process for forming the bonded wafer substrate 301 using cross-sectional views. FIG. 8 shows a process of forming the ink jet recording head 1 by bonding the flow path forming wafer plate 100 and the bonded wafer substrate 301. In these drawings, a portion where one ink jet recording head 1 is formed is extracted and shown in a sectional view.

Below, the formation process of the flow path formation wafer board 100 is demonstrated.
4A shows a step of preparing a silicon single crystal wafer 110, FIG. 4B shows a step of forming a nozzle forming layer 200 on the silicon single crystal wafer 110, and FIG. 4C shows a nozzle opening in the nozzle forming layer 200. FIG. 4D shows a step of etching the silicon single crystal wafer 110 to form a pressure generation chamber.

First, as shown in FIG. 4A, a silicon single crystal wafer 110 having a plane orientation (110) is prepared.
Next, as shown in FIG. 4B, a nozzle forming layer 200 made of polysilicon is formed on one surface of the silicon single crystal wafer 110 by thermal CVD (Chemical Vapor Deposition) or the like. The nozzle forming layer 200 is formed to have a thickness of several μm, for example, preferably 1 to 5 μm. Then, an oxide film is formed on the surface of the nozzle forming layer 200.

In FIG. 4C, before the nozzle opening 21 is formed in the nozzle formation layer 200, the silicon single crystal wafer 110 is bonded to the surface facing the surface on which the nozzle formation layer 200 of the silicon single crystal wafer 110 is formed. Then, the pressure generation chamber 12, the communication portion 13, and the ink supply path 14 are formed by anisotropic etching with an aqueous potassium hydroxide (KOH) solution.
The oxide film formed on the surface of the nozzle formation layer 200 functions as an etching stop layer for stopping the progress of wet etching.
The ink supply path 14 is formed by etching (half-etching) the silicon single crystal wafer 110 halfway in the thickness direction. Half etching is performed by adjusting the etching time.
Next, in FIG. 4D, the nozzle opening 21 is opened in the nozzle formation layer 200 by reactive ion etching, ion milling, or the like.

Here, anisotropic etching is performed using the difference in etching rate of the silicon single crystal wafer 110. For example, in this embodiment, when the silicon single crystal wafer 110 is immersed in an alkaline solution such as KOH, the first (111) plane perpendicular to the (110) plane is gradually eroded and the first (111) A second (111) plane that forms an angle of about 70 degrees with the plane and forms an angle of about 35 degrees with the (110) plane appears as compared with the etching rate of the (110) plane (111) This is performed by utilizing the property that the etching rate of the surface is about 1/180. By this anisotropic etching, precision processing can be performed based on the parallelogram depth processing formed by two first (111) surfaces and two oblique second (111) surfaces. The pressure generating chambers 12 can be arranged with high density.
Through the above steps, the flow path forming wafer plate 100 is obtained.

Hereinafter, a method for forming the bonded wafer substrate 301 will be described.
5A is a process for preparing a support substrate, FIGS. 5B to 5E are processes for forming a diaphragm on the support substrate, and FIGS. 6F to 6I are processes for forming a piezoelectric element 300. FIG. 7J is a step of heat bonding the bonded wafer substrate 301 having the piezoelectric element holding portion 31 for sealing the piezoelectric element 300 to the vibration plate 53, and FIG. 7K is a step of removing the supporting substrate. Is shown.

First, as shown in FIG. 5A, a quartz substrate 400 as a supporting substrate is prepared. As the support substrate, one that can be removed later by etching is preferable.
Next, as shown in FIG. 5B, a silicon nitride layer 500 is formed on one side of the quartz substrate 400.
Next, as shown in FIG. 5C, a silicon dioxide layer 510 that becomes the elastic film 51 is formed on the silicon nitride layer 500.
Further, as shown in FIG. 5D, a zirconium dioxide layer 520 is formed on the silicon dioxide layer 510.

  Examples of the method for forming the silicon nitride layer 500, the silicon dioxide layer 510, and the zirconium dioxide layer 520 include a vacuum deposition method, an ion assist deposition method, an ECR (electron cyclotron resonance) sputtering method, and the like.

Next, as shown in FIG. 5E, a lower electrode film 60 is formed on the zirconium dioxide layer 520 by sputtering. As a material of the lower electrode film 60, platinum (Pt), iridium (Ir), or the like is suitable. This is because a piezoelectric layer 700 described later formed by sputtering or sol-gel method needs to be crystallized by baking at a temperature of about 600 to 1000 ° C. in an air atmosphere or an oxygen atmosphere after the film formation. Because. That is, the material of the lower electrode film 60 must be able to maintain conductivity at such a high temperature and in an oxygen atmosphere, and particularly when lead zirconate titanate (PZT) is used as the piezoelectric layer 70. It is desirable that the change in conductivity due to the diffusion of lead oxide is small. For these reasons, platinum or iridium is preferable.
The silicon nitride layer 500, the silicon dioxide layer 510, the zirconium dioxide layer 520, and the lower electrode film 60 constitute a diaphragm.

  Next, as shown in FIG. 6F, a piezoelectric layer 700 is formed. The piezoelectric layer 700 preferably has crystals oriented. For example, in this embodiment, a so-called sol-gel method is obtained in which a so-called sol in which a metal organic material is dissolved and dispersed in a catalyst is applied, dried, gelled, and further fired at a high temperature to obtain a piezoelectric layer 700 made of a metal oxide. Thus, the piezoelectric layer 700 in which crystals are oriented is obtained. As a material of the piezoelectric layer 700, a lead zirconate titanate-based material is suitable when used for an ink jet recording head. The method for forming the piezoelectric layer 700 is not particularly limited, and for example, the piezoelectric layer 700 may be formed by a sputtering method.

  Further, after forming a lead zirconate titanate precursor film by a sol-gel method or a sputtering method, a method of crystal growth at a low temperature by a high pressure treatment method in an alkaline aqueous solution may be used. In any case, the piezoelectric layer 700 formed in this way has crystals preferentially oriented unlike a bulk piezoelectric body, and in this embodiment, the piezoelectric layer 700 is formed in a columnar shape. Has been. Note that the preferential orientation refers to a state in which the orientation direction of the crystal is not disordered and a specific crystal plane is oriented in a substantially constant direction. A columnar thin film refers to a state in which substantially cylindrical crystals are aggregated over the surface direction with the central axis substantially coincided with the thickness direction to form a thin film. Of course, it may be a thin film formed of preferentially oriented granular crystals. Note that the thickness of the piezoelectric layer manufactured in this way in the thin film process is generally 0.2 to 5 μm.

  Next, as shown in FIG. 6G, an upper electrode film 800 is formed. The upper electrode film 800 may be any material having high conductivity, and can use many metals such as aluminum, gold, nickel, platinum, and iridium, conductive oxides, and the like. In this embodiment, the platinum film is formed by sputtering.

  Next, as shown in FIG. 6H, the piezoelectric element 300 is patterned by etching only the piezoelectric layer 700 and the upper electrode film 800.

  Next, as shown in FIG. 6I, lead electrodes 90 are formed and patterned for each piezoelectric element 300.

  Next, as shown in FIG. 7J, a bonded wafer substrate 301 having a piezoelectric element holding portion 31 and a reservoir portion 32 for sealing the piezoelectric element 300 on the quartz element 400 side of the quartz substrate 400 is heat bonded. The adhesive for adhering the quartz substrate 400 and the bonded wafer substrate 301 is not particularly limited, but in the present embodiment, an epoxy adhesive is used and is cured by heating up to about 140 degrees.

  Next, as shown in FIG. 7 (k), the quartz substrate 400 is removed by polishing, etching, or the like (the removed portion is indicated by a two-dot chain line). In the case of etching, the silicon nitride layer 500 serves as an etching stopper.

  As shown in FIG. 7L, the silicon nitride layer 500, the silicon dioxide layer 510, the zirconium dioxide layer 520, and the lower electrode film 60 in the region facing the communicating portion 13 are removed by, for example, laser processing or the like. 501 is formed. As shown in FIG. 2B, the communication portion 13 and the reservoir portion 32 communicate with each other through the hole 501 to form the reservoir 150.

In addition, since this bonded wafer substrate 301 has a thickness of, for example, about 400 μm, the rigidity is maintained even after etching.
The bonded wafer substrate 301 is obtained through the above steps.

FIG. 8 is a cross-sectional view showing the process of bonding and separating the flow path forming wafer plate 100 and the bonded wafer substrate 301.
Adhesion between the flow path forming wafer plate 100 and the bonded wafer substrate 301 is performed after the adhesive layer 1000 is applied to a necessary place. The adhesive is not particularly limited, but for example, an epoxy adhesive is preferable.
As shown in FIG. 3, the ink jet recording head 1 is obtained by cutting and separating the bonded flow path forming wafer plate 100 and the bonded wafer substrate 301.

According to this embodiment, there are the following effects.
(1) Since the flow path forming substrate 10 including the nozzle forming layer 20 in which the nozzle openings 21 are formed and the vibration plate 53 provided on the bonding substrate 30 are bonded by the adhesive layer 1000, the nozzle openings 21 are There is no need to bond the formed nozzle plate, and the ink jet recording head 1 having a simple structure and little positional deviation of the nozzle openings 21 can be obtained.

  (2) Since the material of the nozzle forming layer 20 and the flow path forming substrate 10 is the same silicon, there is little difference in thermal expansion, deformation and peeling due to temperature differences can be reduced, and an ink jet recording head 1 with stable ejection characteristics and a method for manufacturing the same. Can be obtained.

  (3) The ink jet recording head 1 capable of easily and reliably bonding the vibration plate 53 and the flow path forming substrate 10 and the manufacturing method thereof are obtained.

  (4) After the nozzle formation layer 20 is formed on the silicon single crystal wafer 110, the nozzle openings 21 are formed in the nozzle formation layer 20. After that, since the pressure generating chamber 12 is formed, it is not necessary to adhere the nozzle plate in which the nozzle openings 21 are formed, and a method for manufacturing the ink jet recording head 1 with a simple structure and less positional deviation can be obtained.

  (5) The bonding substrate 30 can be obtained in which the piezoelectric element 300 is sandwiched between the diaphragms 53 and held by the piezoelectric element holding unit 31.

  (6) Since the flow path forming substrate 10 provided with the nozzle openings 21 and the bonding substrate 30 provided with the piezoelectric elements 300 and the diaphragm 53 are bonded, there is no need to bond the nozzle plate formed with the nozzle openings 21, and the structure Thus, a method of manufacturing the ink jet recording head 1 with a small positional deviation can be obtained.

  (7) Since each member is aligned in the wafer state and then divided to obtain the ink jet recording head 1, there is no need to perform individual positioning, and ink jet recording with high manufacturing efficiency and little positional deviation. A method for manufacturing the head 1 can be obtained.

The liquid jet head manufacturing method of the present invention has been described above. Needless to say, the present invention is not limited to the above-described embodiment.
For example, in the above-described embodiment, the bonding substrate 30 having the piezoelectric element holding unit 31 is exemplified as the bonding substrate, but the bonding substrate is not particularly limited as long as the driving IC is mounted thereon.
For example, in the above-described embodiment, the compliance substrate 40 is bonded onto the bonding substrate 30 after the pressure generation chamber 12, the communication portion 13, and the ink supply path 14 are formed. When the bonding substrate 30 is bonded to the formation substrate 10, the compliance substrate 40 may be bonded at the same time.

  In the above-described embodiment, an example of an ink jet recording head that prints a predetermined image or character on a print medium has been described as an example of a liquid ejecting head, but the present invention is not limited to this. For example, a color material ejecting head used for manufacturing a color filter such as a liquid crystal display, an electrode material ejecting head used for forming an electrode such as an organic EL display and an FED (surface emitting display), and a bio-organic ejecting head used for manufacturing a biochip. The present invention can also be applied to other liquid ejecting heads.

FIG. 2 is an exploded perspective view illustrating an outline of an ink jet recording head as a liquid ejecting head. FIG. 4A is a partial plan view of an ink jet recording head, and FIG. FIG. 6 is a perspective view showing a method for manufacturing an ink jet recording head. Sectional drawing which shows the formation method of a flow path formation wafer board. Sectional drawing which shows the formation method of a bonded wafer board | substrate. Sectional drawing which shows the formation method of a bonded wafer board | substrate. Sectional drawing which shows the formation method of a bonded wafer board | substrate. Sectional drawing which shows the process of adhere | attaching a flow-path formation wafer board and a joining wafer board | substrate.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Inkjet recording head as a liquid ejecting head, 10 ... Flow path forming substrate, 12 ... Pressure generating chamber, 20 ... Nozzle forming layer, 21 ... Nozzle opening, 30 ... Bonding substrate, 31 ... Piezoelectric element holding part, 53 ... Diaphragm, 300 ... piezoelectric element, 400 ... quartz substrate as a supporting substrate, 1000 ... adhesive layer.

Claims (6)

A flow path forming substrate having a row of pressure generation chambers communicating with the nozzle openings, a piezoelectric element provided to the pressure generation chamber via a vibration plate, and a joint sandwiching the piezoelectric element with the vibration plate In a method for manufacturing a liquid jet head comprising a substrate,
Forming a nozzle formation layer on a silicon single crystal substrate;
Forming the nozzle opening in the nozzle forming layer;
Etching the silicon single crystal substrate to form the pressure generating chamber. A method of manufacturing a liquid jet head, comprising: The method of manufacturing a liquid jet head according to claim 1,
The method of manufacturing a liquid jet head, wherein the nozzle forming layer is a silicon layer. In the manufacturing method of the liquid jet head according to claim 1 or 2,
Forming the diaphragm and the piezoelectric element on a support substrate;
Heat bonding the bonding substrate having a piezoelectric element holding portion for sealing the piezoelectric element to the diaphragm;
And a step of removing the supporting substrate. A method of manufacturing a liquid jet head, comprising: In the manufacturing method of the liquid jet head according to any one of claims 1 to 3,
A method of manufacturing a liquid ejecting head, comprising: adhering the flow path forming substrate to the bonding substrate having the vibration plate and the piezoelectric element. The method of manufacturing a liquid jet head according to claim 4,
The method of manufacturing a liquid jet head, wherein the adhesive to be bonded in the bonding step is an epoxy adhesive. In the manufacturing method of the liquid jet head according to any one of claims 1 to 5,
A method of manufacturing a liquid jet head, wherein the steps are performed on a silicon single crystal wafer and then divided.

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