JP2009141370A - 発光ダイオードパッケージ - Google Patents
発光ダイオードパッケージ Download PDFInfo
- Publication number
- JP2009141370A JP2009141370A JP2008314885A JP2008314885A JP2009141370A JP 2009141370 A JP2009141370 A JP 2009141370A JP 2008314885 A JP2008314885 A JP 2008314885A JP 2008314885 A JP2008314885 A JP 2008314885A JP 2009141370 A JP2009141370 A JP 2009141370A
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- electrodes
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- positive electrode
- led
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- 239000008393 encapsulating agent Substances 0.000 claims abstract description 36
- 239000004020 conductor Substances 0.000 claims description 21
- 239000012780 transparent material Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
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- H01L33/486—
-
- H01L33/62—
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10431—Details of mounted components
- H05K2201/10507—Involving several components
- H05K2201/10522—Adjacent components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】一対の第1電極112と一対の第2電極114とを有するリードフレーム110と、前記リードフレーム上に配置されたLEDチップ120と、前記リードフレームの一部とLEDチップを封入する封入材130とを備える。前記第1電極と前記第2電極は、前記LEDチップと電気的に接続される。前記第1電極と前記第2電極とは、封入材の外に配置される。封入材は、上面130a、底面130b、第1側面130cおよび前記第1側面に対向する第2側面130dを有し、前記第1電極は、前記第1側面から前記底面へ延在し、前記第2電極は、前記第2側面から前記底面に延在する。
【選択図】図1
Description
Claims (10)
- 一対の第1電極および一対の第2電極を有するリードフレームと、
前記リードフレーム上に配置され、前記一対の第1電極および前記一対の第2電極と電気的に接続されているLEDチップと、
前記リードフレームの一部および前記LEDチップを封入する封入材とを備え、
前記一対の第1電極および前記一対の第2電極が前記封入材の外に配置され、前記封入材は上面、底面、第1側面および第1側面に対向する第2側面を有し、
前記一対の第1電極が第1側面から底面まで延設され、前記一対の第2電極が第2側面から底面まで延設されている発光ダイオード(LED)パッケージ。 - 前記一対の第1電極が、第1正極と該第1正極から電気的に絶縁された第1負極とを有するとともに、前記一対の第2電極が、第2正極と該第2正極と電気的に絶縁された第2負極とを有する、請求項1記載のLEDパッケージ。
- 前記第1正極が前記第2正極と電気的に接続するとともに、前記第1負極が前記第2負極と電気的に接続する、請求項2記載のLEDパッケージ。
- 前記リードフレームが、第1接続導体および第2接続導体を有し、前記第1接続導体が前記第1正極と前記第2正極との間に電気的に接続されるとともに、前記第2接続導体が前記第1負極と前記第2負極との間に電気的に接続される、請求項3記載のLEDパッケージ。
- 前記封入材が、前記第1正極及び前記第2正極を識別する識別マークを有する、請求項2記載のLEDパッケージ。
- 第1電極のそれぞれが、前記第1側面と前記底面とに沿って延在するように曲げられ、第2電極のそれぞれが、前記第2側面と前記底面とに沿って延在するように曲げられている、請求項1記載のLEDパッケージ。
- 前記封入材が、キャビティを有するハウジングと、該キャビティ中に配置された透明材料層とを備え、
前記キャビティ中の前記LEDチップおよびリードフレームの一部が、透明材料層で封入されている、請求項1記載のLEDパッケージ。 - 前記一対の第1電極が分離され、前記一対の第2電極が分離されるように、前記第1側面に面して配設された第1突出部と、前記第2側面に面して配設された第2突出部とを、前記封入材が有する、請求項1記載のLEDパッケージ。
- 回路基板と、前記回路基板上に配設された複数の発光ダイオード(LED)パッケージとを備え、
前記の各LEDパッケージが、
一対の第1電極と一対の第2電極とを有し、前記一対の第1電極が第1正極と前記第1正極から電気的に絶縁された第1負極とを備えるとともに、前記一対の第2電極が第2正極と前記第2正極から電気的に絶縁された第2負極とを備えるリードフレームと、
前記リードフレーム上に配置され、前記一対の第1電極と前記一対の第2電極とが電気的に接続されたLEDチップと、
前記リードフレームの一部と前記LEDチップを封入する封入材とを備え、
前記一対の第1電極と前記一対の第2電極は前記封入材の外に配置され、前記封入材は上面、底面、第1側面および第1側面と対向する第2側面を有し、前記一対の第1電極が前記第1側面から前記底面まで延設され、前記一対の第2電極が前記第2側面から前記底面まで延設されているLEDモジュール。 - 前記回路基板が、少なくとも1つの正の接続パッドと少なくとも1つの負の接続パッドとを有し、2つの隣接するLEDパッケージの間にある正の接続パッドが、前記第1正極および前記第2正極に同時に電気的接続され、2つの隣接するLEDパッケージの間にある負の接続パッドが、前記第1負極および前記第2負極に同時に電気的接続される、請求項9記載のLEDモジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096220959U TWM337834U (en) | 2007-12-10 | 2007-12-10 | Package structure for light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009141370A true JP2009141370A (ja) | 2009-06-25 |
Family
ID=40456858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008314885A Pending JP2009141370A (ja) | 2007-12-10 | 2008-12-10 | 発光ダイオードパッケージ |
Country Status (4)
Country | Link |
---|---|
US (1) | US8138517B2 (ja) |
EP (1) | EP2071641A3 (ja) |
JP (1) | JP2009141370A (ja) |
TW (1) | TWM337834U (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8168990B2 (en) * | 2009-03-19 | 2012-05-01 | Cid Technologies Llc | Apparatus for dissipating thermal energy generated by current flow in semiconductor circuits |
US9759727B2 (en) * | 2010-03-23 | 2017-09-12 | Massachusetts Institute Of Technology | Ligands for semiconductor nanocrystals |
TW201330332A (zh) * | 2012-01-02 | 2013-07-16 | Lextar Electronics Corp | 固態發光元件及其固態發光封裝體 |
DE102012109139A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Gehäuse für ein optoelektronisches Bauelement, Elektronische Baugruppe, Verfahren zum Herstellen von Gehäusen und Verfahren zum Herstellen elektronischer Baugruppen |
US9105825B2 (en) | 2013-06-03 | 2015-08-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Light source package and method of manufacturing the same |
JP6102670B2 (ja) * | 2013-10-07 | 2017-03-29 | 豊田合成株式会社 | 発光装置 |
DE102017114668A1 (de) * | 2017-06-30 | 2019-01-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Anordnung mit einem optoelektronischen Halbleiterbauteil |
US11914141B1 (en) | 2018-08-23 | 2024-02-27 | Apple Inc. | Electronic device with protected light sources |
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JPH05243442A (ja) * | 1992-02-27 | 1993-09-21 | Nec Corp | 表面実装型ダイオード |
JPH08306501A (ja) * | 1994-12-24 | 1996-11-22 | Temic Telefunken Microelectron Gmbh | 表面取付け可能な多極電子構成要素 |
JPH11330131A (ja) * | 1998-05-20 | 1999-11-30 | Rohm Co Ltd | 半導体装置 |
JP2000040781A (ja) * | 1998-05-20 | 2000-02-08 | Rohm Co Ltd | 半導体装置 |
JP2002223002A (ja) * | 2001-01-26 | 2002-08-09 | Nichia Chem Ind Ltd | パッケージ成形体と発光装置 |
JP2002222993A (ja) * | 2001-01-23 | 2002-08-09 | Rohm Co Ltd | 半導体発光素子 |
JP2002223005A (ja) * | 2001-01-26 | 2002-08-09 | Toyoda Gosei Co Ltd | 発光ダイオード及びディスプレイ装置 |
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JP2009021472A (ja) * | 2007-07-13 | 2009-01-29 | Rohm Co Ltd | 半導体発光装置 |
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-
2007
- 2007-12-10 TW TW096220959U patent/TWM337834U/zh unknown
-
2008
- 2008-12-10 EP EP08075931.9A patent/EP2071641A3/en not_active Ceased
- 2008-12-10 JP JP2008314885A patent/JP2009141370A/ja active Pending
- 2008-12-10 US US12/331,452 patent/US8138517B2/en not_active Expired - Fee Related
Patent Citations (13)
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JPH05243442A (ja) * | 1992-02-27 | 1993-09-21 | Nec Corp | 表面実装型ダイオード |
JPH08306501A (ja) * | 1994-12-24 | 1996-11-22 | Temic Telefunken Microelectron Gmbh | 表面取付け可能な多極電子構成要素 |
JPH11330131A (ja) * | 1998-05-20 | 1999-11-30 | Rohm Co Ltd | 半導体装置 |
JP2000040781A (ja) * | 1998-05-20 | 2000-02-08 | Rohm Co Ltd | 半導体装置 |
JP2002222993A (ja) * | 2001-01-23 | 2002-08-09 | Rohm Co Ltd | 半導体発光素子 |
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Also Published As
Publication number | Publication date |
---|---|
US20090146157A1 (en) | 2009-06-11 |
US8138517B2 (en) | 2012-03-20 |
TWM337834U (en) | 2008-08-01 |
EP2071641A2 (en) | 2009-06-17 |
EP2071641A3 (en) | 2013-10-09 |
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