JP2009021272A - Plasma processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the blocking of a discharge hole for processing gas formed in a second gas supply member disposed at a lower place in a plasma processing device with a two-stage shower. <P>SOLUTION: Disclosed is the plasma processing device 1 which has a substrate W stored in a processing container 2 and making the processing gas into plasma to process the substrate W, wherein a first gas supply member 41 having a discharge hole 41 for plasma generating gas and the second gas supply member 42 for the discharge hole 71 for the processing gas are disposed above a mount base 3 where the substrate W is mounted in the processing container 2, the first gas supply member 41 is disposed above the second gas supply member 42, and the discharge hole 71 provided to the second gas supply member 42 is provided on an upper half surface of the second gas supply member 42. Sticking of deposits on the upper half surface of the second gas supply member 42 can be suppressed with plasma produced in the processing container 2, and then the discharge hole 71 can be prevented from being blocked. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a plasma processing apparatus that generates a plasma in a processing container to process a substrate.

  Conventionally, for example, in a film forming process or an etching process, for example, a plasma processing apparatus using a microwave is used. Furthermore, plasma processing apparatuses using microwaves have been proposed that have a gas supply member called a shower plate, which is horizontally disposed above a mounting table on which a substrate is mounted in a processing container ( Patent documents 1, 2, 3).

  The shower plate has a large number of discharge holes for supplying plasma generation gas and processing gas to the processing space side. According to the plasma processing apparatus having such a shower plate, damage to the substrate can be reduced under high processing efficiency, and uniform plasma processing can be performed.

JP 2006-203246 A JP 2002-299330 A JP 2005-93737 A

  Recently, in the processing container, a first gas supply member having a discharge hole for plasma-generating gas is disposed above, and a second gas supply member having a process gas discharge hole is disposed below, so-called 2 A corrugated shower has been developed. According to such a two-stage shower, by supplying the processing gas from the second gas supply member arranged below, adhesion of deposits and the like on the upper part in the processing container can be reduced, and generation of particles during the process is suppressed. be able to.

  However, in such a plasma processing apparatus equipped with a two-stage shower, a considerably large amount of reaction product adheres to the second gas supply member disposed below, and the second gas supply member There has been a problem that the formed process gas discharge hole is blocked. In particular, in the case of Gap-Fill-CVD in which a substrate is formed while applying an RF bias in the processing container, the processing gas discharge hole is likely to be blocked. In addition, in order to avoid insufficient supply of the processing gas due to the blockage of the discharge holes, the second gas supply member needs to be cleaned or replaced, and maintenance is complicated.

  The present invention has been made in view of the above points, and in a plasma processing apparatus provided with a two-stage shower, avoids blockage of a processing gas discharge hole formed in a second gas supply member disposed below. The purpose is that.

  In order to achieve the above object, according to the present invention, there is provided a plasma processing apparatus for storing a substrate in a processing container and converting the processing gas into plasma to process the substrate, wherein the substrate is placed in the processing container. A first gas supply member having a discharge hole for plasma generation gas and a second gas supply member having a discharge hole for processing gas are disposed above the mounting table, and the first gas supply member is disposed on the first stage. A plasma processing apparatus, wherein the plasma processing apparatus is disposed above the second gas supply member, and an ejection hole provided in the second gas supply member is provided in an upper half surface of the second gas supply member. Provided. The second gas supply member is made of, for example, a pipe having a circular longitudinal section, and the discharge hole is in a range of 180 ° above the horizontal at the central angle of the second gas supply member. Is provided.

  In the plasma processing apparatus, the first gas supply member and the second gas supply member may be formed with openings that penetrate vertically. In this case, it is desirable that the opening formed in the first gas supply member and the opening formed in the second gas supply member are arranged at positions that overlap vertically.

  The first gas supply member may have a plurality of ring portions arranged concentrically, and a flow path of a plasma generation gas may be formed inside the plurality of ring portions. Similarly, the second gas supply member may include a plurality of ring portions arranged concentrically, and a flow path for processing gas may be formed inside the plurality of ring portions.

  Note that the processing gas may be discharged at a flow rate of 0.6 sccm or more from each discharge hole provided in the second gas supply member.

  According to the present invention, deposits on the upper half surface of the second gas supply member can be suppressed by the plasma generated in the processing container, and the discharge holes can be prevented from being blocked. As a result, a shortage of processing gas supply can be avoided, and maintenance work required for cleaning and replacement of the second gas supply member can be reduced.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a longitudinal sectional view showing a schematic configuration of a plasma processing apparatus 1 according to the present embodiment. FIG. 2 is a bottom view of the upper shower plate 41 as a first gas supply member provided in the plasma apparatus 1, and FIG. 3 is an enlarged view of the XX cross section in FIG. 2. FIG. 4 is a bottom view of the lower shower plate 42 as a second gas supply member provided in the plasma apparatus 1, and FIG. 5 is an enlarged view of a YY section in FIG. 4. In addition, in this specification and drawing, about the component which has the substantially same function structure, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol.

  As shown in FIG. 1, the plasma processing apparatus 1 includes a bottomed cylindrical processing container 2 made of, for example, aluminum and having an open top. The inner wall surface of the processing container 2 is covered with a protective film such as alumina. The processing container 2 is electrically grounded.

  A susceptor 3 as a mounting table for mounting, for example, a semiconductor wafer (hereinafter referred to as a wafer) W as a substrate is provided at the bottom of the processing container 2. The susceptor 3 is made of, for example, aluminum, and a heater 5 that generates heat when power is supplied from an external power source 4 is provided therein. Thereby, the wafer W on the susceptor 3 can be heated to a predetermined temperature.

  An exhaust pipe 12 for exhausting the atmosphere in the processing container 2 by an exhaust device 11 such as a vacuum pump is provided at the bottom of the processing container 2.

The upper opening of the processing container 2 is provided with a transmission window 22 made of, for example, a dielectric quartz member through a sealing material 21 such as an O-ring for ensuring airtightness. The transmission window 22 has a substantially disk shape. Instead of the quartz member, other dielectric materials, for example, ceramics such as Al ₂ O ₃ and AlN may be used.

  A planar antenna member, for example, a disc-shaped radial line slot antenna 23 is provided above the transmission window 22. The radial line slot antenna 23 is made of a thin copper plate plated or coated with a conductive material such as Ag, Au, etc., and a large number of slits 24 are formed, for example, in a spiral or concentric pattern. ing.

  On the upper surface of the radial line slot antenna 23, a slow wave plate 25 for shortening the wavelength of the microwave described later is disposed. The slow wave plate 25 is covered with a conductive cover 26. An annular heat medium flow path 27 is provided in the cover 26, and the cover 26 and the transmission window 22 are maintained at a predetermined temperature by the heat medium flowing through the heat medium flow path 27.

  A coaxial waveguide 29 is connected to the center of the cover 26, and the coaxial waveguide 29 is constituted by an inner conductor 29a and an outer tube 29b. The inner conductor 29a is connected to the radial line slot antenna 23 described above. The radial line slot antenna 23 side of the inner conductor 29 a is formed in a conical shape so that microwaves can be efficiently propagated to the radial line slot antenna 23.

  The coaxial waveguide 29 is a rectangular waveguide 32, a mode converter 33, a coaxial waveguide 29, a slow wave plate 25, a radial line, for example, a 2.45 GHz microwave generated by the microwave supply device 31. The light is radiated to the transmission window 22 through the slot antenna 23. Then, an electric field is formed on the lower surface of the transmission window 22 by the microwave energy at that time, and plasma is generated in the processing container 2.

  A two-stage shower 40 as a gas supply mechanism is provided in the processing container 2. The two-stage shower 40 includes an upper shower plate 41 as a first gas supply member and a lower shower plate 42 as a second gas supply member. The upper shower plate 41 and the lower shower plate 42 are both horizontally disposed, and the upper shower plate 41 is disposed above the lower shower plate 42.

  As shown in FIG. 2, the upper shower plate 41 includes triple ring portions 45, 46, and 47 that are arranged concentrically around the central axis of the processing vessel 2 that is formed in a cylindrical shape. By configuring the upper shower plate 41 with the plurality of ring portions 45, 46, 47 in this way, the upper shower plate 41 has an opening 48 that penetrates vertically between the ring portions 45, 46, 47. The innermost ring portion 45 is formed inside and the outermost ring portion 47 is formed outside.

  Each of the ring portions 45, 46, and 47 is formed of a hollow tube having a circular longitudinal cross section. Inside each of the ring portions 45, 46, and 47, nitrogen, Ar (argon), and oxygen are used as plasma generation gases. A flow path 50 to which etc. are supplied is formed. Each ring part 45, 46, 47 is comprised, for example with the quartz tube.

  On the lower surface of each of the ring portions 45, 46, 47, discharge holes 51 for plasma generation gas are opened at a plurality of locations. Each discharge hole 51 communicates with a flow path 50 formed in each ring portion 45, 46, 47. As shown in FIG. 3, in the upper shower plate 41, the discharge hole 51 is disposed at the lowermost part of each of the ring portions 45, 46, 47 so as to be directed vertically downward.

  Each ring part 45, 46, 47 is fixed to the inner wall surface of the processing container 2 by a plurality of support members 55. A flow path 56 communicating with the flow path 50 formed inside each of the ring portions 45, 46, 47 is formed inside some of the support members 55 among the plurality of support members 55.

  A plasma generation gas supply source 60 disposed outside the processing container 2 is connected to the flow path 56 via a pipe 61. The plasma generation gas supply source 60 stores, for example, nitrogen, Ar, oxygen or the like as a plasma generation gas. The plasma generation gas is introduced from the plasma generation gas supply source 60 into the flow path 50 inside the upper shower plate 41 (the ring portions 45, 46, 47) through the pipe 61 and the flow path 56, and processed from the discharge hole 51. A plasma generating gas is supplied downward toward the inside of the container 2.

  As shown in FIG. 4, the lower shower plate 42 includes triple ring portions 65, 66, and 67 arranged concentrically around the central axis of the processing vessel 2 formed in a cylindrical shape. The ring portions 65, 66, 67 of the lower shower plate 42 have the same diameter as the ring portions 45, 46, 47 of the upper shower plate 41, and the ring portion 65 is disposed immediately below the ring portion 45. A ring portion 66 is disposed directly below 46, and a ring portion 67 is disposed directly below the ring portion 47.

  By configuring the lower shower plate 42 with the plurality of ring portions 65, 66, 67 in this way, the lower shower plate 42 has an opening 68 that penetrates vertically between the ring portions 65, 66, 67. The innermost ring portion 65 is formed inside and the outermost ring portion 67 is formed outside. In this case, the opening 48 formed in the upper shower plate 41 and the opening 68 formed in the lower shower plate 42 are arranged at positions that overlap vertically.

  Each of the ring portions 65, 66, and 67 is formed of a hollow tubular material having a circular longitudinal cross section. Inside each of the ring portions 65, 66, and 67, TEOS (Si (OC2H5) 4) or the like is used as a processing gas. Is formed. Each ring part 65, 66, 67 is comprised, for example with the quartz tube.

  On the upper surface of each of the ring portions 65, 66, 67, process gas discharge holes 71 are opened at a plurality of locations. Each discharge hole 71 communicates with a flow path 70 formed in each ring portion 65, 66, 67. As shown in FIG. 5, in the lower shower plate 42, the discharge hole 71 has an upper half portion of each ring portion 65, 66, 67, that is, a horizontal plane 65 ′ passing through the center of each ring portion 65, 66, 67. The ring portions 65 and 66 are opened in a range a of 180 ° at an upper central angle from 66 ′ and 67 ′, and the discharge holes 71 are directed in the horizontal direction or upward from the horizontal direction. , 67 in the upper half.

  Similarly to the upper shower plate 41, the ring portions 65, 66, and 67 of the lower shower plate 42 are fixed to the inner wall surface of the processing container 2 by a plurality of support members 75. A flow path 76 communicating with the flow path 70 formed inside each of the ring portions 65, 66, 67 is formed inside some of the support members 75 among the plurality of support members 75.

  A processing gas supply source 80 disposed outside the processing container 2 is connected to the flow path 76 via a pipe 81. The processing gas supply source 80 stores, for example, TEOS as a processing gas. A processing gas is introduced from the processing gas supply source 80 into the flow path 70 inside the lower shower plate 42 (respective ring portions 65, 66, 67) through the pipe 81 and the flow path 76, and the processing container 2 is discharged from the discharge hole 71. The processing gas is supplied inward or upward from the horizontal.

Next, the operation of the plasma processing apparatus 1 configured as described above will be described. As an example of plasma processing, an example in which an insulating film (SiO ₂ film) is formed using Ar and oxygen as a plasma generation gas and TEOS as a processing gas will be described.

  For example, when performing a plasma film forming process in the plasma processing apparatus 1, first, as shown in FIG. 1, the wafer W is loaded into the processing container 2 and placed on the susceptor 3. And exhaust_gas | exhaustion is performed from the exhaust pipe 12, and the inside of the processing container 2 is pressure-reduced. Further, a plasma generating gas (Ar, oxygen) is supplied downward into the processing container 2 from the discharge hole 51 disposed on the lower surface of the upper shower plate 41 disposed above the processing container 2 and disposed below. Further, a processing gas (TEOS) for plasma film formation is supplied into the processing container 2 from the discharge hole 71 arranged in the upper half of the lower shower plate 42 in the horizontal direction or upward from the horizontal direction. Then, by the operation of the microwave supply device 31, an electric field is generated on the lower surface of the transmission window 22, the plasma generation gas is turned into plasma, and further, the processing gas is turned into plasma, and depending on the active species generated at that time, A film forming process is performed on the wafer W.

  Then, after the film forming process is performed for a predetermined time, the operation of the microwave supply device 31 and the supply of the processing gas into the processing container 2 are stopped, and the wafer W is unloaded from the processing container 2 and a series of operations are performed. The plasma film forming process ends.

  During the plasma processing, only the plasma generation gas is supplied from the upper shower plate 41, and the processing gas contributing to film formation is supplied only from the lower shower plate 42 disposed below the upper shower plate 41. Adhesion of deposits in the upper part of the container 2 is suppressed, and generation of particles during the process is prevented. In this case, the processing gas is supplied from the discharge hole 71 of the lower shower plate 42 in the horizontal direction or upward from the horizontal direction, but the plasma is supplied by being discharged downward from the discharge hole 51 of the upper shower plate 41. The process gas can be prevented from reaching the position of the upper shower plate 41 by the down flow of the generated gas. Thereby, in addition to the upper part in the processing container 2, deposits can be prevented from adhering to the upper shower plate 41, and problems such as blocking of the discharge holes 51 provided in the upper shower plate 41 are avoided. For this reason, the plasma generation gas can be stably supplied into the processing container 2.

  On the other hand, in the vicinity of the lower shower plate 42, there are active species generated by converting the processing gas into plasma, and therefore deposits may adhere to the lower shower plate 42. However, as described above, in the lower shower plate 42, the process gas discharge holes 71 are opened in the upper half range “a” of the ring portions 65, 66, 67. In this case, the plasma generation gas discharged from the discharge hole 51 of the upper shower plate 41 is continuously supplied to the upper half of each of the ring portions 65, 66, and 67 in a plasma state. Due to the action of the plasmatized plasma generation gas, a sputtering phenomenon occurs, and deposits are prevented from adhering to the upper half of each ring portion 65, 66, 67. For this reason, the problem of obstruction | occlusion of the discharge hole 71 provided in the lower shower plate 42 of the two-step shower 40 is avoided. For this reason, it is possible to stably supply the processing gas into the processing container 2 and realize a suitable plasma film forming process.

  Therefore, according to the plasma processing apparatus 1, it is possible to realize a suitable film forming process even for a Gap-Fill-CVD plasma process or the like, in which the discharge holes have been easily blocked. In addition, the work load for cleaning and replacement of the lower shower plate 42 can be reduced, and maintenance is facilitated.

  In addition, it is desirable to discharge the processing gas at a flow rate of 0.6 sccm or more from each discharge hole 71 provided in the lower shower plate 42. This is because, in the lower shower plate 42, since the process gas discharge holes 71 are open in the upper half range a of the ring portions 65, 66, 67, the flow rate of the process gas is insufficient. The plasma-generated plasma gas enters the inside of each ring portion 65, 66, 67 (flow path 70) from the discharge hole 71, and the processing gas is turned into plasma inside the discharge hole 71 and the flow path 70, and deposited. There is a risk of adhesion of objects. By setting the flow rate of the processing gas discharged from each discharge hole 71 to 0.6 sccm or more, it is possible to prevent the plasma generation gas from entering the discharge holes 71 and the ring portions 65, 66, 67. Occurrence of deposits in the discharge holes 71 and the flow path 70 can be prevented.

  For example, when the plasma processing apparatus 1 performs plasma film formation on the wafer W having a diameter of 8 inches, the atmosphere in the processing container 2 is maintained at about 1 to 5 mTorr during the plasma processing, and the wafer W on the susceptor 3 is applied to the wafer W. On the other hand, a bias power of about 2.5 kW is applied. Further, the plasma generation gas is supplied from the discharge hole 51 of the upper shower plate 41 at a flow rate of about Ar: 100 to 200 sccm and oxygen: about 200 sccm. Further, the supply pressure of the processing gas from the processing gas supply source 80 is set to about 50 to 100 mTorr. Under such conditions, the inner diameter of the flow path 70 formed in each of the ring portions 65, 66, 67 constituting the lower shower plate 42 is set to 1.5 mm or more, and the discharge holes are opened in the ring portions 65, 66, 67. By setting the hole diameter of 71 to 0.5 mm or less, the flow rate of the processing gas discharged from each discharge hole 71 can be maintained at 0.6 sccm or more. Further, if the inner diameter (1.5 mm or more) of the flow path 70 formed in each of the ring portions 65, 66, 67 is sufficiently large with respect to the hole diameter (0.5 mm or less) of the discharge hole 71 in this way, A machining operation for opening the discharge holes 71 in the ring portions 65, 66, 67 can be easily performed.

  Further, the upper shower plate 41 is preferably arranged close to the vicinity of the plasma generation unit. In the case of the plasma processing apparatus 1 having the radial line slot antenna 23, the upper shower plate 41 is located within a distance of 5 cm from the transmission window 22. It should be arranged. The distance between the upper shower plate 41 and the lower shower plate 42 is preferably within 10 mm. By adopting such a positional relationship, plasma can be suitably generated in the processing container 2 by the microwave energy generated by the microwave supply device 31.

  Further, as described in FIG. 5, the processing gas discharge holes 71 formed in the lower shower plate 42 are located above the horizontal planes 65 ′, 66 ′, 67 ′ passing through the centers of the ring portions 65, 66, 67. The discharge hole 71 may be opened in a range of 45 ° upward from the horizontal direction (angle θ = 0 to 45 ° in FIG. 5). When θ is greater than 45 °, the processing gas supplied upward from the discharge hole 71 of the lower shower plate 42 easily reaches the upper part in the processing container 2, and deposits easily adhere to the upper part in the processing container 2. Because it becomes.

Further, when plasma processing is not performed in the plasma processing apparatus 1, a cleaning gas such as NF ₃ is supplied from the upper shower plate 41 or the lower shower plate 42 into the processing container 2 and is generated by the microwave supply apparatus 31. The inside of the processing container 2 can be cleaned by generating plasma in the processing container 2 with the microwave energy. In such a case, it is preferable to supply a cleaning gas from the discharge hole 71 of the lower shower plate 42 and supply a gas that does not contribute to film formation, such as nitrogen, oxygen, and Ar, from the discharge hole 51 of the upper shower plate 41. As a result, the cleaning gas can be turned into plasma inside the lower shower plate 42 (channel 70), and the channel 70 and the discharge holes 71 can be cleaned.

  As mentioned above, although an example of preferable embodiment of this invention was demonstrated, this invention is not limited to the form illustrated here. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the ideas described in the claims, and these are naturally within the technical scope of the present invention. It is understood that it belongs.

  For example, the upper shower plate and the lower shower plate may not be configured by the ring portion. For example, an upper shower plate (lower shower plate) having a plurality of linear pipes arranged in parallel, and a plurality of linear pipes An upper shower plate (lower shower plate) having a configuration in which the two are combined in a lattice shape can also be applied. Moreover, you may provide the temperature control mechanism which cools or heats an upper shower plate (lower shower plate).

  In the above embodiment, the plasma processing apparatus using microwaves has been described as an example. However, the present invention is not limited to this, and the present invention can of course be applied to a plasma processing apparatus using high-frequency voltages. . In the above embodiment, the present invention is applied to the plasma processing apparatus 1 that performs the film forming process. However, the present invention is applicable to a substrate processing other than the film forming process, for example, a plasma processing apparatus that performs an etching process. Applicable. Further, the substrate processed by the plasma processing apparatus of the present invention may be any of a semiconductor wafer, an organic EL substrate, a substrate for FPD (flat panel display), and the like.

  As shown in FIG. 6, the discharge holes 51 of the plasma generation gas are arranged on the lower surface of the upper shower plate 41 (the ring portions 45, 46, 47), and the lower shower plate 42 (the ring portions 65, 66, 67) A plasma film forming process was performed using a conventional plasma processing apparatus having a processing gas discharge hole 71 disposed on the lower surface. As a result, as shown in FIG. 7, the deposit 90 adheres to the lower half surface of the lower shower plate 42 (respective ring portions 65, 66, 67), and the discharge of the processing gas provided on the lower surface of the lower shower plate 42 occurs. The hole 71 was blocked with the deposit 90. On the other hand, the deposit 90 did not adhere to the upper half of the lower shower plate 42 (the ring portions 65, 66, 67). Therefore, it is understood that if the process gas discharge hole 71 is opened in the upper half range a of the lower shower plate 42 (the ring portions 65, 66, 67), the problem of blocking of the discharge hole 71 is avoided. It was.

  Next, in the plasma processing apparatus 1, the flow rate of the processing gas from the discharge hole 71 was examined when the wafer W having a diameter of 12 inches was subjected to the plasma film forming process. During the plasma processing, the atmosphere in the processing chamber 2 was kept at 1 to 40 mTorr, the power supplied from the microwave supply device 31 was 3 kW, and the bias power applied to the wafer W on the susceptor 3 was 1.5 kW. Further, the plasma generation gas is supplied from the discharge hole 51 of the upper shower plate 41 at a flow rate of oxygen: 60 to 600 sccm, and the processing gas is supplied from the discharge hole 71 of the lower shower plate 42 at a flow rate of TEOS: 30 to 200 sccm. . In addition, the inner diameter of the flow path 70 formed in each of the ring portions 65, 66, and 67 constituting the lower shower plate 42 was 4 mm, and the diameter of the discharge hole 71 was 0.3 mm.

When the flow rate of the processing gas discharged from the discharge hole 71 is 0.3 sccm, 0.5 sccm, and 0.6 sccm, the molar concentration of oxygen in the discharge hole 71 (kmol / m ³ ) is the result shown in FIG. It was. When the flow rate of the processing gas discharged from each discharge hole 71 was 0.3 sccm, the molar concentration of oxygen in the discharge hole 71 did not become 0 even after the steady state was reached. In addition, when the flow rate of the processing gas discharged from each discharge hole 71 was 0.5 sccm, it took nearly 0.1 seconds to reach a steady state. On the other hand, when the flow rate of the processing gas discharged from each discharge hole 71 is 0.6 sccm, a steady state is obtained immediately after the supply of the processing gas (less than 0.01 second), and the molar concentration of oxygen in the discharge hole 71 is It was kept at almost 0 immediately after the start of supply. If the flow rate of the processing gas discharged from the discharge hole 71 is set to 0.6 sccm or more, the plasma-generated plasma generation gas is prevented from entering the inside (flow path 70) from the discharge hole 71, and the discharge hole 71 and the flow It is considered that the occurrence of deposits in the passage 70 can be prevented.

  The present invention can be applied to plasma processing in which plasma is generated in a processing container to process a substrate.

It is a longitudinal cross-sectional view which shows the outline of a structure of the plasma processing apparatus concerning this Embodiment. It is a bottom view of an upper shower plate. It is an enlarged view in the XX cross section in FIG. It is a bottom view of a lower shower plate It is an enlarged view in the YY cross section in FIG. It is explanatory drawing of the upper shower plate and lower shower plate in the conventional plasma processing apparatus. It is explanatory drawing of the state by which the discharge hole of the process gas was obstruct | occluded in the conventional plasma processing apparatus. It is a graph which shows the relationship between the flow volume of process gas, and the molar concentration of oxygen in the discharge hole of process gas.

Explanation of symbols

W Wafer 1 Plasma processing device 2 Processing vessel 3 Susceptor (mounting table)
22 Transmission window 29 Coaxial waveguide 31 Microwave supply device 40 Two-stage shower 41 Upper shower plate (first gas supply member)
42 Lower shower plate (second gas supply member)
45, 46, 47 Ring part 48 Opening part 50 Flow path 51 Discharge hole 60 Plasma generation gas supply source 65, 66, 67 Ring part 68 Opening part 70 Flow path 71 Discharge hole 80 Processing gas supply source

Claims (7)

A plasma processing apparatus for storing a substrate in a processing container and converting the processing gas into plasma to process the substrate,
A first gas supply member having a discharge hole for plasma generation gas and a second gas supply member having a discharge hole for processing gas are disposed above a mounting table on which a substrate is placed in the processing container; and , Disposing the first gas supply member above the second gas supply member,
A plasma processing apparatus, wherein an ejection hole provided in the second gas supply member is provided in an upper half surface of the second gas supply member.   The second gas supply member is formed of a pipe having a circular longitudinal section, and the discharge hole is provided in a range of 180 ° from the horizontal to the upper side at the central angle of the second gas supply member. The plasma processing apparatus according to claim 1, wherein:   The plasma processing apparatus according to claim 1, wherein the first gas supply member and the second gas supply member are formed with openings that penetrate vertically.   The opening formed in the first gas supply member and the opening formed in the second gas supply member are arranged at positions that overlap vertically. Plasma processing equipment.   The first gas supply member has a plurality of ring portions arranged concentrically, and a flow path of plasma generation gas is formed inside the plurality of ring portions. Item 5. The plasma processing apparatus according to any one of Items 1 to 4.   The second gas supply member has a plurality of ring portions arranged concentrically, and a flow path of a processing gas is formed inside the plurality of ring portions. The plasma processing apparatus in any one of 1-5.   The plasma processing apparatus according to claim 1, wherein a processing gas is discharged at a flow rate of 0.6 sccm or more from each discharge hole provided in the second gas supply member.

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