JP2009009991A - Light source device, projector, monitor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light source device improved in heat dissipation performance; a projector; and a monitor device. <P>SOLUTION: The light source device 1 has a support 11 and a semiconductor laser chip 12 mounted on the support 11, wherein the semiconductor laser chip 12 has an emitter 12a emitting light and an anode electrode 14 formed on a surface opposed to the support 11, which has a base electrode 9 formed on a surface opposed to the semiconductor laser chip 12, the anode electrode and base electrode 9 being electrically connected to each other through a bonding member 7 containing a bonding material 5 and a heat-conductive member 6, having larger heat conductivity than the bonding material 5, in the bonding material 5. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light source device, a projector, and a monitor device.

In a conventional electronic device, an element chip is arranged on a submount placed on a base. Also, solder has been used for connection between the base and the submount and between the submount and the element chip. (Patent Document 1)
JP-A-11-307875

  However, since the thermal conductivity of the solder is small, heat transfer is hindered by the solder, and with such a connection method, heat dissipation from the element chip to the submount cannot be performed efficiently. As a result, the temperature of the semiconductor laser chip rises, affecting the laser characteristics.

  It is an object of the present invention to provide a light source device, a projector, and a monitor device that have improved heat dissipation.

A light source device including a support and a light-emitting element mounted on the support, wherein the light-emitting element is a light-emitting unit that emits light, and an element electrode formed on a surface facing the support And the support has a support electrode formed on a surface facing the light emitting element, and the element electrode and the support electrode are bonded to each other in a bonding material and the bonding material. The light source device is characterized in that it is conductively connected through a joining member including a heat transfer member having a higher thermal conductivity than the material.
By providing such a structure, the element electrode and the support electrode are electrically connected via a bonding member including a bonding material and a heat transfer member having a higher thermal conductivity than the bonding material in the bonding material. Since it is connected, the heat generated in the light emitting element is reliably radiated to the support through the heat transfer member having a high thermal conductivity in the joining member. Thereby, the temperature rise by the self-heating of the light emitting element can be suppressed and the characteristics of the light emitting element can be stabilized.

It is preferable that the heat transfer member is in contact with the element electrode and the support electrode.
By providing such a structure, one of the heat transfer members is in direct contact with the element electrode and the other is in direct contact with the support electrode, so that heat generated in the light emitting element is transferred from the element electrode to the coupling member. The heat is reliably radiated to the support side through the heat transfer member. Thereby, the temperature rise by the self-heating of the light emitting element can be suppressed and the characteristics of the light emitting element can be stabilized.

It is preferable that a plurality of the heat transfer members are included in the bonding member, and the heights of the plurality of heat transfer members in the bonding member are substantially equal.
By providing such a structure, the joining member includes a plurality of the heat transfer members, and since the heights thereof in the joining member are equal, the heat generated in the light emitting element forms the element electrode. The heat is reliably radiated from the surface to the support through a plurality of heat radiation paths. Thereby, the temperature rise by the self-heating of the light emitting element can be suppressed, and the characteristics of the light emitting element can be stabilized. In addition, since the gap between the element electrode and the support electrode can be made uniform, the angle of the laser beam emitted from the light emitting part can be made constant.

The light emitting element includes a plurality of the light emitting portions, the element electrodes are provided corresponding to the plurality of light emitting portions, and the surface of the light emitting element on which the element electrodes are formed has the element A convex portion having a height substantially equal to the electrode is provided so as to surround the element electrode, and the heat transfer member is preferably in contact with the convex portion and the support electrode.
By providing such a structure, one of the heat transfer members is in direct contact with the convex portion and the other is in direct contact with the support electrode, so that heat is radiated from the convex portion in addition to the heat radiation path from the element electrode. A path | route increases and the heat dissipation from the said light emitting element can be improved. Thereby, the temperature rise by the self-heating of the light emitting element can be suppressed and the characteristics of the light emitting element can be stabilized.

The plurality of heat transfer members in the joining member are preferably separated from each other by the joining material.
By providing such a structure, the plurality of heat transfer members in the bonding member are separated by the bonding material, so that the heat interference between the heat transfer members and further, the plurality of light emitting portions can be prevented. Thus, the temperature rise of the light-emitting element can be suppressed, and the light source device with stabilized characteristics of the light-emitting element can be obtained.

It is preferable that the support electrode is divided and provided corresponding to the element electrode, and the bonding material is made of an insulating material and the heat transfer member is made of a conductive material.
By providing such a structure, the element electrodes can be electrically independent, so that the light emitting unit can be driven independently. Thereby, it becomes possible to adjust the output in the said light emission part, and power consumption can be reduced.

A wiring board having a board and a wiring layer is preferably provided, and the wiring layer and the support electrode are conductively connected.
By providing such a structure, the heat generated in the light emitting element is transmitted to the support via the heat transfer member, dissipated into the support, and also radiated to the wiring layer via the support electrode. . Therefore, the heat dissipation path from the light emitting element can be expanded, and thereby, the temperature rise due to self-heating of the light emitting element can be suppressed, and the characteristics of the light emitting element can be stabilized.

A wiring board having a substrate and a wiring layer, wherein the wiring layer is sandwiched between the support and the light-emitting element, and the element electrode and the wiring layer are electrically connected via the bonding member. It is preferable that
By providing such a structure, the heat of the light emitting element is transmitted to the wiring layer through the heat transfer member, is transmitted through the wiring layer, and is radiated to both the wiring board side and the support side. Thereby, the temperature rise by the self-heating of the light emitting element can be suppressed, and the characteristics of the light emitting element can be stabilized.

  It is the projector provided with the light source device of this invention. By providing this structure, the heat dissipation of the light source device can be improved, so that a projector in which changes in characteristics due to heating are suppressed can be obtained.

  It is the monitor apparatus provided with the light source device of this invention. By providing this structure, the heat dissipation of the light source device can be improved, so that a monitor device in which changes in characteristics due to heating are suppressed can be obtained.

    Hereinafter, embodiments of a light source device, a projector, and a monitor device according to the present invention will be described with reference to the drawings. In the following drawings, the scale of each member is appropriately changed in order to make each member a recognizable size.

[First Embodiment]
FIG. 1 is a schematic perspective view of a light source device 1 of the present embodiment. 2A is a plan view showing the configuration of the semiconductor laser chip (light emitting element) 12 and the periphery of the light source device 1, and FIG. 2B is a cross-sectional view taken along the line AA ′ in FIG. is there. The configuration of the light source device 1 will be described with reference to these drawings.

  The light source device 1 includes a holding member 10, a support 11, a semiconductor laser chip 12, a current supply substrate (wiring substrate) 20, a fixing member 40, and a wavelength conversion element 30. A support 11 is placed on the holding member 10, and a semiconductor laser chip (light emitting element) 12 is placed on the support 11. The wavelength conversion element 30 is disposed on the opposite side of the support 11 with respect to the semiconductor laser chip 12. The wavelength conversion element 30 is fixed to a fixing member 40 placed on the holding member 10. In addition, a current supply substrate 20 is connected to the semiconductor laser chip 12. Further, a wavelength selection element as an external resonator may be disposed on the optical path outside the wavelength conversion element 30.

  The holding member 10 is a member that supports the support 11 and the fixing member 40 in a positioned state. The holding member 10 can be made of any material, but preferably has high thermal conductivity. Examples of the material of the holding member 10 include ceramics and Cu (copper) material.

  The support 11 is placed on the holding member 10 and supports the semiconductor laser chip 12. The material of the support 11 is preferably a material having high thermal conductivity. Examples of the material of the support 11 include ceramics and Cu (copper) material.

  A support electrode 9 for electrically connecting to the semiconductor laser chip 12 is disposed on the upper surface of the support 11 facing the semiconductor laser chip 12. The present embodiment is characterized in that the support electrode 9 is a common electrode for a plurality of emitters (light emitting portions) 12a. The support electrode 9 is formed so as to cover substantially the entire upper surface of the support 11. Further, the semiconductor laser chip 12 is extended from the connection portion with the semiconductor laser chip 12 to the outside.

  The semiconductor laser chip 12 has a substantially rectangular shape in plan view, and a plurality of emitters 12a for irradiating laser light are arranged linearly along the longitudinal direction (Y-axis direction) of the semiconductor laser chip 12 (FIG. 2A). ).

  On the upper surface of the substantially rectangular emitter substrate 15, the cathode electrode 13 is disposed with an opening 13e corresponding to each emitter 12a.

  On the lower surface of the emitter substrate 15, a first reflective layer 16, an active layer 17, a second reflective layer 18, and an anode electrode (element electrode) 14 are sequentially laminated. The first reflective layer 16, the active layer 17, and the second reflective layer 18 are common to each emitter 12a, but the anode electrode 14 is disposed independently corresponding to each emitter 12a. In the active layer 17, a current confined active region 17 a is formed in a region overlapping the anode electrode 14 in plan view, and laser light is generated from this portion.

  The wavelength conversion element 30 is disposed so that the incident end face 30 a faces the emitter 12 a of the semiconductor laser chip 12. The wavelength conversion element 30 is used to obtain light of red, green, and blue wavelengths by changing the wavelength of light emitted from the emitter 12a.

  The fixed member 40 is provided with two rectangular parallelepiped legs 40c and 40d on the side of the end faces 40a and 40b. The wavelength conversion element 30 is placed on the two legs 40c and 40d. In this way, the positional relationship between the semiconductor laser chip 12 and the wavelength conversion element 30 is kept constant.

  In the current supply substrate 20, the protective layer 26 of the cathode wiring layer 22 sandwiched between the protective layer 21 and the protective layer 26 and the protective layer 27 of the anode wiring layer 24 sandwiched between the protective layer 25 and the protective layer 27 are bonded to each other. They are connected via an agent layer (insulating layer) 23. Further, the protective layers 21, 25, 26, 27 and the adhesive layer 23 are not formed on the support 11, and the terminal portion (first terminal) 22 a of the cathode wiring layer 22 and the anode wiring layer 24 are not formed. A terminal portion (second terminal) 24 a is drawn out and connected to the semiconductor laser chip 12.

  The terminal portion 22a of the extracted cathode wiring layer 22 is connected to the side end portion 13a of the cathode electrode 13 through the conductive member 19a. The terminal portion 24a of the extracted anode wiring layer 24 is connected to the terminal portion 9a of the support electrode through the conductive member 19b. For example, indium and tin can be used for the conductive members 19a and 19b.

  As the material for the protective films 21 and 25 and the insulating layer 23, an insulating resin material such as polyimide, acrylic or epoxy, or a material such as glass epoxy is used.

  As the material of the cathode wiring layer 22 and the anode wiring layer 24, Cu (copper) or the like is used. The cathode wiring layer 22 and the anode wiring layer 24 are formed in a thin film by a plating method or the like. The film thicknesses of the cathode wiring layer 22 and the anode wiring layer 24 are preferably 30 μm or more and 500 μm. If the film thickness is less than 30 μm, the strength of the wiring layers 22 and 24 is insufficient, and if it exceeds 500 μm or more, the material cost becomes large. It is also possible to change only the thickness of the terminal portion by changing the thickness of the wiring layer and the terminal portion.

  The terminal portion 22a of the cathode wiring layer 22 drawn out on the support 11 and the terminal portion 24a of the anode wiring layer 24 may use the above-described copper thin film as they are, but CuW (copper tungsten alloy), A material having a high thermal conductivity such as BeO (beryllium oxide) may be used. Also, a copper thin film obtained by applying nickel (nickel) or gold plating can be used as the terminal portions 22a and 24a. Thereby, the terminal portions 22a and 24a have improved electrical conductivity, high thermal conductivity, and improved heat dissipation.

  The anode electrode 14 and the support electrode 9 are connected by a thermocompression bonding method in which a bonding member 7 in which a heat transfer member 6 is dispersed in a bonding material 5 is used and heated and pressurized to bond them together. A crimping jig (not shown) is used for thermocompression bonding.

  In the case where the support electrode 9 is a common electrode for the plurality of emitters 12a as in this embodiment, the combination of the bonding material 5 and the heat transfer member 6 is as follows. It is possible.

The first combination is a combination in which an insulating material is used for the bonding material 5 and a conductive material is used for the heat transfer member 6.
The second combination is a combination in which a conductive material is used for the bonding material 5 and an insulating or conductive material is used for the heat transfer member 6.

First, the first combination will be described.
Examples of the insulating bonding material 5 include an epoxy resin and a thermosetting resin of a phenol resin. Since these insulating binders 5 generally have low thermal conductivity, the heat transfer member 6 is made of a material having high thermal conductivity.

  Examples of the heat transfer member 6 include simple metals such as Ag, Cu, and Be, or alloys such as Cu—W and C—Mo. Further, ceramics such as AlN, SiC, and AlSiC as insulating materials, or those obtained by plating the surface of a carbon-based material with conductive Au or Ni / Au to impart conductivity can be used. Table 1 shows the thermal conductivity of typical materials. As the heat transfer member 6, an optimum material is appropriately selected and used with reference to Table 1 and taking into consideration the thermal conductivity of the bonding material 5.

As the heat transfer member 6, for example, a member formed into a shape such as a sphere, a rectangular parallelepiped, or a cylinder can be used.
When a spherical body is used for the heat transfer member 6, the bonding member 7 in which the heat transfer member 6 is uniformly dispersed in the bonding material 5 can be obtained. By using this joining member 7, heat can be efficiently radiated from the anode electrode 14 to the support 11. Moreover, the space | interval of the anode electrode 14 and the support body 11 can be made uniform by aligning the diameter of the heat-transfer member 6 formed in the spherical body substantially uniformly. As a result, the distance between the emitter 12a of the semiconductor laser chip 12 and the wavelength conversion element 30 can be made uniform.

  The heat transfer member 6 may be a columnar member such as a rectangular parallelepiped or a cylinder instead of a sphere. In this case, a region where the heat transfer member 6 is in contact with the anode electrode 14 or the support electrode 9 is expanded, and the heat dissipation can be further improved. Moreover, the space | interval of the anode electrode 14 and the support body 11 can be made constant by aligning the thickness (Z-axis direction) of the arrange | positioned heat-transfer member 6 uniformly.

  The bonding material 5 in which the heat transfer member 6 is dispersed can be formed into a sheet shape to be the bonding member 7. The film-like joining member 7 is disposed so as to be sandwiched between the anode electrode 14 and the support electrode 9.

  A spherical heat transfer member 6 can also be used as the paste-like joining member 7. In this case, it can apply | coat on the support body electrode 9 by the screen printing method, the dispensing method, etc.

  When the heat transfer member 6 is a conductive particle and the bonding material 5 is an insulating flexible material, an ACF (Anisotropic Conductive Film) or ACP (Anisotropic Conductive Paste) is adopted as the bonding member 7. Can do.

  Next, the second combination will be described. In this combination, a conductive material is used for the bonding material 5, and an insulating or conductive material is used for the heat transfer member 6.

  As the bonding material 5 having conductivity, an alloy with a low melting point metal such as Au—Su or Pb—Sn can be used in addition to a low melting point metal such as In, Pb, or Sn.

  When the conductive heat transfer member 6 is used, since the bonding material 5 and the heat transfer member 6 have conductivity, the reliability of electrical connection between the anode electrode 14 and the support electrode 9 is remarkably improved. be able to. As the heat transfer member 6 having conductivity, a single metal such as Ag, Cu, or Be, or an alloy such as Cu—W, C—Mo, or the like can be used. Further, ceramics such as AlN, SiC, and AlSiC, or those obtained by plating the surface of a carbon-based material with Au or Ni / Au can also be used.

  On the other hand, as the heat transfer member 6 having insulating properties, a carbon-based material such as ceramics such as AlN, SiC, and AlSiC, graphite, and diamond can be used.

  The configuration in which the heat transfer member 6 is dispersed in the bonding material 5 has been described above. However, the heat transfer member 6 can have a structure arranged in the bonding material 5. 3 and 4 are schematic perspective views showing examples of the joining member 7 having the heat transfer members 6 arranged.

  In FIG. 3A, flat plate-like heat transfer members 6a having a substantially rectangular shape in plan view are arranged substantially parallel to each other in a direction (Y-axis direction) intersecting the extending direction (X-axis direction).

  In FIG. 3 (b), the heat transfer members 6a have a shape swelled in the width direction (Y-axis direction) of the cross section, and are mutually in a direction (Y-axis direction) intersecting the extending direction (X-axis direction). They are arranged almost in parallel.

  In FIG. 3C, the columnar heat transfer members 6c are arranged substantially parallel to each other in a direction (Y axis direction) intersecting the arrangement direction (X axis direction). This figure shows the state before thermocompression bonding of the joining member 7c formed in a sheet shape in which the heat transfer members 6 are arranged on the binding material 5. FIG.

  FIG. 4A shows a state where the columnar heat transfer member 6d is dispersed in the joining member 7d. The height (Z-axis direction) of the heat transfer member 6d is substantially uniform.

  In the joining member 7e of FIG. 4B, the columnar heat transfer members 6e are arranged in a direction (Y-axis direction) intersecting the extending direction. The upper surface 6 e 1 of the heat transfer member 6 e is in contact with the anode electrode 14, and the lower surface 6 e 2 is in contact with the support electrode 9. The heat transfer member 6e is substantially trapezoidal in cross-sectional view, and the side of the heat transfer member 6e in the arrangement direction is longer on the upper surface 6e1 side than on the lower surface 6e2 side.

  When the support electrode 9 is a common electrode for the plurality of emitters 12a as in this embodiment, there is no particular restriction on the arrangement direction of the heat transfer members 6, and the heat transfer member 6 They may contact each other. However, as shown in FIGS. 3 and 4, the heat transfer members 6 are arranged substantially parallel to each other in the direction (Y-axis direction) intersecting the extending direction (X-axis direction), and the bonding material 5. Further, by using a material having a lower thermal conductivity than that of the heat transfer member 6, heat interference between adjacent emitters 12a is prevented, and heat is transferred from the anode electrode 14 to its extending direction inside the heat transfer member 6, It can be propagated to the support side through the heat transfer member 6.

  Further, when the bonding material 5 has insulating properties and the heat transfer member 6 has conductivity, the width of the surface of the bonding material 5 facing the anode electrode surface is made smaller than the width of the anode electrode. Similarly, when the bonding material 5 has conductivity and the heat transfer member 6 has insulation, the width of the surface of the heat transfer member 6 facing the anode electrode surface is made narrower than the width of the anode electrode. With such a configuration, electrical connection between the anode electrode and the support electrode can be ensured.

(Function, effect)
The operation and effect of the light source device 1 having the above configuration will be described.

  By using the bonding member 7 including the heat transfer member 6 having a higher thermal conductivity than the bonding material to connect the anode electrode 14 and the support electrode 9, the anode electrode 14 moves to the support electrode 9 and further to the support 11 side. Therefore, the heat dissipation of the semiconductor laser chip 12 can be improved. Thereby, the temperature rise of the semiconductor laser chip 12 can be suppressed and stable laser light can be emitted.

  By using a conductive material for the bonding material 5 and the heat transfer member 6, the contact resistance between the anode electrode 14 and the support electrode 9 is reduced, so that heat generation at the bonding member 7 is suppressed and heat dissipation is improved. be able to. Thereby, the temperature rise of the semiconductor laser chip 12 can be suppressed and stable laser light can be emitted.

  Since the terminal part 9a of the support electrode 9 and the terminal part 24a of the anode wiring layer 24 are connected, the heat conducted to the support 11 through the support electrode 9 is transferred from the terminal part 9a of the support electrode to the anode wiring layer. Since heat can also be radiated to the anode wiring layer 24 via the terminal portion 24a, the heat dissipation can be improved. Thereby, the temperature rise of the semiconductor laser chip 12 can be suppressed and stable laser light can be emitted.

  By disposing the adjacent heat transfer members 6 apart from each other, thermal interference with the adjacent emitters 12a can be prevented, and the central part of the semiconductor laser chip 12 is high and the end parts are low along the arrangement direction of the emitters 12a. Since the temperature distribution can be relaxed, the temperature rise in the semiconductor laser chip 12 can be made uniform. Thereby, the dispersion | variation in the characteristic of the laser beam inject | emitted from the several emitter 12a by temperature distribution can be suppressed.

  Since the heat transfer member 6 is in contact with the anode electrode 14 and the support electrode 9, heat generated in the semiconductor laser chip 12 is reliably transferred from the anode electrode 14 to the support 11 side through the heat transfer member 6 of the bonding member 7. Heat is dissipated. Thereby, the temperature rise due to self-heating of the semiconductor laser chip 12 can be suppressed, and the characteristics of the semiconductor laser chip 12 can be stabilized.

  By making the thickness of the heat transfer member 6 of the joining member 7 disposed between the anode electrode 14 and the support electrode 9 equal, a plurality of heat generated in the semiconductor laser chip 12 is generated from the surface on which the anode electrode 14 is formed. It can be reliably discharged to the support 11 through the heat dissipation path. Therefore, the temperature rise due to self-heating of the semiconductor laser chip 12 can be suppressed, and the characteristics of the light emitting element can be stabilized. Further, since the gap between the semiconductor laser chip 12 and the support can be made uniform, the gap between the semiconductor laser chip 12 and the wavelength conversion element 30 can be made uniform, and uniform light can be emitted. .

[Second Embodiment]
Next, a second embodiment will be described. In each embodiment described below, portions having the same configuration as those of the light source device 1 according to the first embodiment described above are denoted by the same reference numerals and description thereof is omitted.

  FIG. 5 is a diagram illustrating a wiring structure of the light source device 100 according to the second embodiment. The light source device 100 includes a holding member 10, a support 11, a semiconductor laser chip 12, a current supply substrate 120, a fixing member 40, and a wavelength conversion element 30. The holding member 10 mounts the support body 11, and the support body 11 mounts the semiconductor laser chip (light emitting element) 12. The wavelength conversion element 30 is disposed on the opposite side of the support 11 with respect to the semiconductor laser chip 12. The wavelength conversion element 30 is fixed to a fixing member 40 placed on the holding member 10. In addition, a current supply substrate 120 is connected to the semiconductor laser chip 12.

  Unlike the first embodiment, the present embodiment is characterized in that the support electrodes 109 on the support 11 are divided and provided corresponding to the respective emitters 12a. The support body electrode 109 extends from the connection portion with the semiconductor laser chip 12 to the outside of the semiconductor laser chip 12 and has a terminal portion 109a.

  When the support electrode 9 is an individual electrode corresponding to the plurality of emitters 12a as in the present embodiment, the support electrode 9 is separated for each emitter 12a, and the support electrode 9 corresponding to each emitter 12a Connection with the anode electrode 14 is established. For this reason, an insulating material is used for the bonding material 5, and a conductive material is used for the heat transfer member 6. Examples of the insulating bonding material 5 include an epoxy resin and a thermosetting resin of a phenol resin. A material having high thermal conductivity is used for the heat transfer member 6. Examples of the heat transfer member 6 include simple metals such as Ag, Cu, and Be, or alloys such as Cu—W and C—Mo. Further, ceramics such as AlN, SiC, and AlSiC as insulating materials, or a surface of a carbon-based material plated with conductive Au or Ni / Au can be used. As the shape of the heat transfer member 6, for example, a shape formed into a shape such as a sphere, a rectangular parallelepiped, or a cylinder can be used.

  Also in the present embodiment, a structure in which a plurality of heat transfer members 6 formed in a columnar shape are arranged can be employed. As a specific example, the example of FIG. 3, FIG. 4 shown in 1st Embodiment can be mentioned.

  In FIG. 3A, flat plate-like heat transfer members 6a having a substantially rectangular shape in plan view are arranged substantially parallel to each other in a direction (Y-axis direction) intersecting the extending direction (X-axis direction). The heat transfer member 6a has conductivity, and the bonding material 5a has insulation. Since the heat transfer members 6a are spaced apart from each other, the heat transfer members 6a are arranged so that the width in the direction intersecting the extending direction is narrower than the gap between the adjacent anode electrodes 14, thereby making the adjacent anode electrodes 14 It is possible not to connect each other.

  Further, since the heat transfer member 6a is in contact with the anode electrode 14 at the upper surface 6a1 and is in contact with the support electrode 9 at the lower surface 6a2, the anode electrode 14 and the support electrode 9 are electrically connected, and a reliable heat dissipation path is provided. Is formed.

  Furthermore, by using a material having a lower thermal conductivity than the heat transfer member 6a for the bonding material 5a, thermal interference between adjacent emitters 12a is prevented, and heat is supported from the anode electrode 14 via the heat transfer member 6a. It can be propagated to the body side and in the extending direction of the heat transfer member 6a.

  In FIG. 3B, the side in the thickness direction (Z-axis direction) in a cross-sectional view forms a shape that swells in the width direction (Y-axis direction) of the heat transfer member and extends in the cross-sectional view direction (X-axis direction). The existing heat transfer members 6b are arranged in parallel to each other. The heat transfer member 6b has conductivity, and the bonding material 5b has insulation. Since the heat transfer members 6b are spaced apart from each other, the heat transfer members 6b are configured such that when the width in the extending direction is narrower than the gap between the adjacent anode electrodes 14, the adjacent anode electrodes 14 are not connected to each other. can do.

  Further, since the heat transfer member 6b is in contact with the anode electrode 14 at the upper surface 6b1 and is in contact with the support electrode 9 at the lower surface 6b2, the anode electrode 14 and the support electrode 9 are electrically connected, and a reliable heat dissipation path is provided. Is formed.

  Furthermore, by using a material having a lower thermal conductivity than the heat transfer member 6b for the bonding material 5b, thermal interference between adjacent emitters 12a is prevented, and heat is supported from the anode electrode 14 via the heat transfer member 6a. It can be propagated to the body side and in the extending direction of the heat transfer member 6a.

  In FIG. 3C, the columnar heat transfer members 6c are arranged substantially parallel to each other in a direction (Y axis direction) intersecting the arrangement direction (X axis direction). The heat transfer member 6c has conductivity, and the bonding material 5c has insulation. Since the heat transfer members 6c are spaced apart from each other, the heat transfer member 6c is configured not to connect the adjacent anode electrodes 14 when the width in the extending direction is narrower than the gap between the adjacent anode electrodes 14. can do.

Further, by using a material having a lower thermal conductivity than the heat transfer member 6c for the bonding material 5c, thermal interference between adjacent emitters 12a is prevented, and heat is supported from the anode electrode 14 via the heat transfer member 6a. It can be propagated to the body side and in the extending direction of the heat transfer member 6a.
In addition, FIG.3 (c) shows the state of the sheet-like joining member before thermocompression bonding.

  In the joining member 7e shown in FIG. 4B, the columnar heat transfer members 6e are arranged in a direction intersecting the extending direction (Y-axis direction). The upper surface 6 e 1 of the heat transfer member 6 e is in contact with the anode electrode 14, and the lower surface 6 e 2 is in contact with the support electrode 9. The heat transfer member 6e is substantially trapezoidal in cross-sectional view, and the side of the heat transfer member 6e in the arrangement direction is longer on the upper surface 6e1 side than on the lower surface 6e2 side. The heat transfer member 6e has conductivity, and the bonding material 5e has insulating properties. Since the heat transfer members 6e are spaced apart from each other, the heat transfer member 6e is configured not to connect the adjacent anode electrodes 14 if the width in the extending direction is narrower than the gap between the adjacent anode electrodes 14. can do.

  Further, since the heat transfer member 6e is in contact with the anode electrode 14 at the upper surface 6e1 and is in contact with the support electrode 9 at the lower surface 6e2, the anode electrode 14 and the support electrode 9 are electrically connected, and a reliable heat dissipation channel is provided. Is formed.

  Further, by using a material having a lower thermal conductivity than the heat transfer member 6e for the bonding material 5e, thermal interference between adjacent emitters 12a is prevented, and heat is supported from the anode electrode 14 via the heat transfer member 6e. It can be propagated to the body side and in the extending direction of the heat transfer member 6e.

In the above description, in FIGS. 3A, 3B, and 4B, the sheet-like bonding member 7e, the semiconductor laser chip 12, and the support 11 are precisely aligned. However, when the sheet-like bonding member 7e, the semiconductor laser chip 12, and the support 11 are precisely aligned, they intersect with the extending direction of the heat transfer members 6a, 6b, 6e. The width in the direction (Y-axis direction) can be equal to or greater than the width of the anode electrode 14.
In this case, the effect of preventing thermal interference between adjacent emitters 12a is further improved, and the contact area between the heat transfer members 6a, 6b, and 6e, the anode electrode 14, and the support electrode 9 is improved, so that the heat dissipation is improved. Further improvement.

  In the current supply substrate 120, the protective layer 26 of the cathode wiring layer 122 sandwiched between the protective layer 21 and the protective layer 26 and the protective layer 27 of the anode wiring layer 124 sandwiched between the protective layer 25 and the protective layer 27 are bonded to each other. They are connected via the agent layer 23. In plan view, the plurality of anode wiring layers 124 and the cathode wiring layer 122 are disposed so as to sandwich the anode wiring layers 124. On the support 11, the protective layers 21, 25, 26, 27 and the adhesive layer 23 are not formed, and the terminal portion 122 a of the cathode wiring layer 122 and the terminal portion 124 a of the anode wiring layer 124 are drawn out. ing. The terminal portion 122a of the extracted cathode wiring layer 122 is connected to the side end portions 13b and 13c of the anode electrode 13 through the conductive member 19a. The plurality of anode wiring layers 124a drawn out on the support 11 are connected to the terminal portions 9a of the plurality of support electrodes 9 through conductive members 19b.

  In this embodiment, since the support body electrode 109 and the anode wiring layer 124 are formed for each emitter 12a, each emitter 12a can be driven independently.

  The operation and effect of the light source device 100 having the above configuration will be described.

  Since heat transmitted in the extending direction of the heat transfer member 6a can be radiated to the current supply substrate 120 side via the terminal portion 122a of the anode wiring layer 122, thermal interference between adjacent emitters 12a can be prevented. Since the temperature distribution in which the central portion of the semiconductor laser chip 12 is high and the end portion is low along the arrangement direction of the emitters 12a can be relaxed, the temperature rise in the semiconductor laser chip 12 can be made uniform. Thereby, variation in characteristics of light emitted from the plurality of emitters 12a due to temperature distribution can be suppressed, so that uniform light can be emitted.

  If each emitter 12a can be driven independently, the output of the emitter 12a can be adjusted, and the amount of heat generated can be suppressed. Thereby, power consumption can be suppressed.

(Modification)
6A is a bottom view of the semiconductor laser chip 12 and FIG. 6B is a cross-sectional view of a main part taken along line CC ′ according to a modification of the second embodiment. FIG. 6B is an enlarged view of the connecting portion between the anode electrode 14 and the support electrode 9 and shows a region including the bonding member 7 and the support electrode 9. Hereinafter, modified examples will be described with reference to this drawing.

  In the present modification, the anode electrode 14, the insulating layer 108 a, and the insulating layer 108 b are formed on the second reflective layer 18. The insulating layers 108 a and 108 b are convex portions that protrude outward from the second reflective layer 18, and are arranged in an island shape so as to surround the anode electrode 14 on the second reflective layer 18. The insulating layers 108a and 108b are preferably made of a material having insulating properties and high thermal conductivity. The insulating layers 108a and 108b have a rectangular shape that is long in the arrangement direction (Y-axis direction) of the anode electrodes 14, and are arranged so as to sandwich the anode electrode 14.

  The insulating layer 108a is disposed corresponding to each anode electrode 14, and is arranged in the extending direction (Y-axis direction). The insulating layer 108b is also arranged corresponding to each anode electrode 14, and is arranged in the extending direction (Y-axis direction). The thicknesses of the anode electrode 14, the insulating layer 108a, and the insulating layer 108b (in the Z-axis direction) are substantially equal, and the surface of the anode electrode 14 and the surfaces of the insulating layers 108a and 108b have the same height in a side view. Yes. The anode electrode 14, the insulating film 108 a, and the insulating film 108 b are connected to the support electrode 9 through the bonding member 7.

  By providing the semiconductor laser chip 12 with the insulating layers 108a and 108b, the contact area between the heat transfer member 6, the semiconductor laser chip 12, and the support electrode 9 can be increased, so that heat dissipation is improved. In addition, the semiconductor laser chip 12 can be stably placed on the support 11.

  In addition, by using a material with high thermal conductivity for the insulating layers 108a and 108b, a heat radiation channel from the semiconductor laser chip 12 to the support electrode 9 can be secured, so that heat radiation can be improved. Thereby, since the temperature rise of the semiconductor laser chip 12 can be suppressed, stable light can be emitted.

  Note that an insulating layer (not shown) can be provided between the anode electrodes 14 of the semiconductor laser chip 12. This insulating layer can have a rectangular shape that is long in the direction (X direction) intersecting the arrangement direction (Y axis direction) of the anode electrodes 14. Further, since the support electrode is not formed on the surface of the support 11 facing the insulating layer between the anode electrodes 14, the thickness of the insulating film between the anode electrodes 14 (Z direction) is The thickness of the support electrode 9 is preferably larger than the thickness of the insulating layers 108a and 108b (Z direction).

  By providing such a structure, the heat transfer member 6 comes into contact with the insulating layer between the anode electrodes 14 and the support 11, so that heat dissipation is improved. In addition, the semiconductor laser chip 12 can be stably placed on the support 11.

[Third Embodiment]
FIG. 7 is a diagram illustrating a wiring structure of the light source device 200 according to the third embodiment. The light source device 200 includes a holding member 10, a support 11, a semiconductor laser chip 12, and a current supply substrate 220. The holding member 10 mounts the support body 11, and the support body 11 mounts the semiconductor laser chip (light emitting element) 12. A current supply substrate 220 is connected to the semiconductor laser chip 12.

  In the current supply substrate 220, the protective layer 26 of the cathode wiring layer 22 sandwiched between the protective layer 21 and the protective layer 26 and the protective layer 27 of the anode wiring layer 224 sandwiched between the protective layer 25 and the protective layer 27 are bonded. They are connected via the agent layer 23. On the support 11, the protective layers 21, 25, 26, 27 and the adhesive layer 23 are not formed, and the terminal portion 22 a of the cathode wiring layer 22 and the terminal portion 24 a of the anode wiring layer 24 are drawn out. ing.

  The terminal portion 22a of the extracted cathode wiring layer 22 is connected to the side end portion 13a of the cathode electrode 13 through the conductive member 19a. The extracted terminal portion 224a of the anode wiring layer 224 is drawn to the lower part of the semiconductor laser chip 12 and is sandwiched between the semiconductor laser chip 12 and the support 11. A joining member 7 is used to connect the anode electrode 14 to the terminal portion 224a of the anode wiring layer 224. Further, a conductive member 19b is used for connection between the anode wiring layer 224 and the support 11. As the conductive members 19a and 19b, for example, in addition to indium and tin, the joining member 7 can be used.

  The terminal portion 22a of the cathode wiring layer 22 and the terminal portion 224a of the anode wiring layer 224 may be formed thicker than the wiring layers 22 and 224. By forming the terminal portion in this way, heat dissipation from the semiconductor laser chip 12 can be improved. In this figure, a thick terminal portion 224a is used.

  The heat generated in the semiconductor laser chip 12 can be conducted into the anode wiring layer 224 through the bonding member 7 and can be radiated to both the current supply substrate 220 side and the support body 11 side. be able to. Thereby, the temperature rise of the semiconductor laser chip 12 can be suppressed and the characteristics of the emitted light can be maintained.

  By forming the wide anode wiring layer 224 for the plurality of emitters 12a, the heat radiation channel from the terminal portion 224a of the anode electrode 224 can be expanded, and thus the heat radiation performance can be improved. Thereby, since the temperature rise of the semiconductor laser chip 12 can be suppressed, stable light can be emitted.

[Fourth Embodiment]
FIG. 8A is a plan view of the light source device 400 according to the fourth embodiment, and FIG. 8B is a cross-sectional view taken along line EE ′ of FIG.
The light source device 400 includes a support 11, a semiconductor laser chip 12, a current supply substrate 20, a first prism 473, a second prism 474, a wavelength conversion element 471, a wavelength selection element 472, and a holding member. 410. As shown in FIG. 6, the light source device 400 according to the present embodiment has the wavelength conversion element 471 and the wavelength selection element 472 arranged horizontally on the holding member 410, and emits light emitted from the semiconductor laser chip 12. Light is guided in the surface direction of the holding member 410.

The semiconductor laser chip 12 is placed on the support 11 placed on the holding member 410. The current supply substrate 20 is disposed on the side surface 12 f side of the semiconductor laser chip 12 and is electrically connected to the semiconductor laser chip 12. Above the semiconductor laser chip 12, a prism element 480 including a first prism 473, a second prism 474, and a dichroic layer 475 sandwiched between the prisms 473 and 474 is disposed.
The prism element 480 is supported at both ends in the longitudinal direction by two spacers 477 provided on the holding member 410. The prism element 480 is fixed above the semiconductor laser chip 12 with a gap between the prism element 480 and the semiconductor laser chip 12.

  The prism element 480 reflects the light emitted from the emitter 12 a on the inner surface and guides it to the wavelength conversion element 471, and reflects the component in the specific wavelength region of the light incident from the wavelength conversion element 471 side by the dichroic layer 475. Thus, there is a function of guiding the light to the outside of the wavelength conversion element 471.

  A wavelength conversion element 471 mounted on a support base 471 a on the holding member 410 is disposed adjacent to the semiconductor laser chip 12 and on the side opposite to the current supply substrate 20. On the side opposite to the semiconductor laser chip 12 when viewed from the wavelength conversion element 471, a wavelength selection element 472 placed on a support base 472a on the holding member 410 is disposed. As shown in FIG. 6B, the support base 471a of the wavelength conversion element 471, the support base 472a of the wavelength selection element 472, and the spacer 477 are positioned and fixed on the holding member 410 by a plurality of fixing pins 478. .

  A wavelength conversion element (second harmonic generation element, SHG: Second Harmonic Generation) 471 transmits a component having a predetermined wavelength out of incident light as it is without being converted, and almost halves components having other wavelengths. It is a non-linear optical element that converts light of a wavelength of That is, the light having the first wavelength emitted from the semiconductor laser chip 12 is converted into the light having the second wavelength shorter than that and emitted.

  The wavelength selection element 472 transmits light having a specific wavelength (light having the second wavelength converted by the wavelength conversion element 471), and transmits light having the first wavelength that has not been converted by the wavelength conversion element 471. Most of the light including the light is reflected by the side wall 472b. Therefore, the wavelength selection element 472 functions as an external resonator mirror of the semiconductor laser chip 12. As the wavelength selection element 472, for example, an optical element such as a hologram having a periodic grating can be used.

  In the above configuration, the light having the first wavelength emitted from the emitter 12a is the inclined surface of the first prism 473 of the prism element 480 (a surface disposed at an angle of approximately 45 ° with respect to the vertical direction). ) And is incident on the dichroic layer 475, is transmitted through the dichroic layer 475, is emitted from the second prism 474, and is incident on the wavelength conversion element 471.

Here, the light W1 indicated by a solid line in FIG. 6B indicates the light emitted from the emitter 12a and traveling toward the wavelength selection element 472, and the light W2 indicated by a broken line is a wavelength selection among the light W1. The component reflected by the element 472 is shown. Light W3 indicated by a chain line extending from the wavelength selection element 472 indicates a component of the light W1 that has passed through the wavelength selection element 472. Further, the light W4 indicates a component of the light W2 that is reflected by the dichroic layer 475.
In FIG. 6B, for convenience of explanation, the lights W1 and W2 are shown at different positions, but in actuality, both are lights that follow the same path.

First, the light W1 emitted from the emitter 12a and incident on the wavelength conversion element 471 is partially converted into light having a half wavelength (second wavelength light) while passing through the wavelength conversion element 471. , Enters the wavelength selection element 472. Among the light W1 incident on the wavelength selection element 472, the component of the specific wavelength (second wavelength) that passes through the wavelength selection element 472 is emitted from the wavelength selection element 472 to the outside as light W3 that is light source light.
On the other hand, the component reflected by the wavelength selection element 472 (light having the first wavelength) is returned to the semiconductor laser chip 12 side as light W2 in the opposite direction.

  The light W <b> 2 that has entered the prism element 480 from the wavelength conversion element 471 enters the dichroic layer 475. In the present embodiment, the dichroic layer 475 selectively reflects light (second wavelength light) converted by the wavelength conversion element 471 and transmits other light. Of these components, the first wavelength component passes through the dichroic layer 475 and enters the semiconductor laser chip 12. Then, it is reflected by the mirror of the semiconductor laser chip 12 and is emitted again as light W1. As described above, the light having the first wavelength reflected by the wavelength selection element 472 is repeatedly reflected and amplified between the wavelength selection element 472 and the semiconductor laser chip 12.

  By the way, a part of the light W2 is converted into light of the second wavelength while traveling in the wavelength conversion element 471. The light having the second wavelength is reflected by the dichroic layer 475 and is incident on the slope portion of the second prism 474 (the slope portion disposed at an angle of about 45 ° with respect to the vertical direction). The reflected light W4 is extracted outside the prism element 480. That is, in this embodiment, the light W3 emitted through the wavelength selection element 472 and the light W4 reflected from the dichroic layer 475 and emitted from the prism element 480 are emitted to the outside as light source light. It has become.

  In the light source device 400 of the present embodiment having the above configuration, a connection structure common to the light source device 1 of the first embodiment is adopted as a connection structure between the semiconductor laser chip 12 and the current supply substrate 20. Accordingly, the heat of the semiconductor laser chip 12 can be dissipated through the cathode wiring layer 24 disposed between the semiconductor laser chip 12 and the support 11, and the light source device 400 with improved heat dissipation can be obtained. it can.

  In the light source device 400 of the present embodiment, the semiconductor laser chip 12 and the current supply substrate 20 having the same connection structure as in the first embodiment are used. Instead, the second or third embodiment is used. The configuration may be adopted. Even when the same configuration as these light source devices is adopted, the light source device 400 with improved heat dissipation can be obtained.

[projector]
FIG. 9 is a schematic diagram of a projector 500 including the light source device according to the present invention. The projector 500 will be described with reference to FIG. In the drawing, the casing constituting the projector 500 is omitted for simplification.

  In the projector 500, the red laser light source (light source device) 400R that emits red light, green light, and blue light, the green laser light source (light source device) 400G, and the blue laser light source (light source device) 400B are described in the fourth embodiment. The light source device 400 is used.

  The projector 500 emits liquid crystal light valves (light modulation devices) 584R, 584G, and 584B that modulate laser beams emitted from the laser light sources 400R, 400G, and 400B and liquid crystal light valves 584R, 584G, and 584B, respectively. A projection lens (projection device) 587 that magnifies and projects the image formed by the cross dichroic prism (color light synthesis means) 586 and the liquid crystal light valves 584R, 584G, and 584B that synthesizes the light and guides it to the projection lens 587 And.

  Further, the projector 500 uniformizes the illuminance distribution of the laser light emitted from the laser light sources 400R, 400G, and 400B, so that the homogenizing optical systems 582R and 582G are located downstream of the laser light sources 400R, 400G, and 400B in the optical path. , 582B are provided, and the liquid crystal light valves 584R, 584G, and 584B are illuminated by light having a uniform illuminance distribution. For example, the uniformizing optical systems 582R, 582G, and 582B are configured by, for example, a hologram 582a and a field lens 582b.

  The three color lights modulated by the liquid crystal light valves 584R, 584G, and 584B are incident on the cross dichroic prism 586. This prism is formed by bonding four right-angle prisms, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are arranged in a cross shape on the inner surface thereof. These dielectric multilayer films combine the three color lights to form light representing a color image. The synthesized light is projected onto the screen 590 by a projection lens 587 which is a projection optical system, and an enlarged image is displayed.

  Since the support 11 of the light source device of the present invention, the semiconductor laser chip 12, and the current supply substrate 20 can be used as members of the light source of the projector of the present embodiment, the heat dissipation can be improved, so that the laser characteristics by heating The change of can be suppressed.

  In the projector of this embodiment, the red, green, and blue laser light sources 400R, 400G, and 400B have been described using the light source device 400 of the fourth embodiment, but the first to fourth implementations have been described. It is also possible to use a light source device of the form. At this time, it is possible to adopt light source devices of different embodiments for each of the light source devices 400R, 400G, and 400B, and it is also possible to adopt light source devices of the same embodiment.

  Further, although a transmissive liquid crystal light valve is used as the light modulator, a light valve other than liquid crystal may be used, or a reflective light valve may be used. Examples of such a light valve include a reflection type liquid crystal light valve and a digital micromirror device (Digital Micromirror Device). The configuration of the projection optical system is appropriately changed depending on the type of light valve used.

  FIG. 10 is a schematic diagram of an image display apparatus 600, which is a modification of the projector. The light source devices of the first to fourth embodiments are also applied to a scanning image display device. An image display device 600 illustrated in FIG. 10 includes a light source device 400 according to the fourth embodiment, a MEMS mirror (scanning unit) 602 that scans light emitted from the light source device 400 toward the screen 610, and the light source device 400. And a condenser lens 603 for condensing the light emitted from the MEMS mirror 602. The light emitted from the light source device 400 is guided to scan the screen 610 in the horizontal direction and the vertical direction by moving the MEMS mirror 602. In the case of displaying a color image, a plurality of emitters (not shown) constituting the semiconductor laser chip 12 may be constituted by a combination of emitters having red, green, and blue peak wavelengths.

[Monitor device]
FIG. 11 is a schematic diagram of the monitor device 700. A configuration example of a monitor device 700 to which the light source device 400 according to the fourth embodiment is applied will be described with reference to FIG. FIG. 11 is a schematic diagram showing an outline of the monitor device. The monitor device 700 includes a device main body 710 and an optical transmission unit 720. The apparatus main body 710 includes the light source apparatus 400 of the fourth embodiment described above.

    The light transmission unit 720 includes two light guides 721 and 722 on the light sending side and the light receiving side. Each of the light guides 721 and 722 is a bundle of a large number of optical fibers, and can send laser light far away. A light source device 400 is disposed on the incident side of the light guide 721 on the light sending side, and a diffusion plate 723 is disposed on the emission side thereof. The laser light emitted from the light source device 400 is transmitted to the diffusion plate 723 provided at the tip of the light transmission unit 720 through the light guide 721, and is diffused by the diffusion plate 723 to irradiate the subject.

    An imaging lens 724 is also provided at the tip of the light transmission unit 720 so that reflected light from the subject can be received by the imaging lens 724. The received reflected light travels through the light guide 722 on the receiving side and is sent to a camera 711 as an imaging means provided in the apparatus main body 710. As a result, the camera 711 can capture an image based on the reflected light obtained by irradiating the subject with the laser light emitted from the light source device 400.

    Since the light source device 400 according to the fourth embodiment is provided, the monitor device 700 can be used with improved heat dissipation, so that it can be used while suppressing changes in laser characteristics due to heating.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
In this figure, the light source device 400 having the same structure as that of the fourth embodiment is used, but instead of this, the light source devices of the first to fourth embodiments may be provided.

1 is a schematic perspective view of a light source device 1 according to a first embodiment. It is the top view and principal part sectional drawing which show the light source device 1 which concerns on 1st Embodiment. It is the figure which showed the example of the arrangement pattern of the heat-transfer member. It is the figure which showed the example of the arrangement pattern of the heat-transfer member. It is the upper side figure and principal part sectional drawing which show the light source device 100 which concerns on 2nd Embodiment. It is the bottom view and principal part sectional drawing of the semiconductor laser chip 12 of a modification. It is the top view and principal part sectional drawing which show the light source device 200 which concerns on 3rd Embodiment. It is the upper side figure and principal part sectional drawing which show the light source device 400 which concerns on 4th Embodiment. Schematic schematic diagram of projector 500 Schematic schematic diagram of the image display device 600 Schematic schematic diagram of the monitor device 700

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Light source device, 5 ... Joining material, 6 ... Heat transfer member, 7 ... Joining member, 9 ... Support body electrode, 10 ... Holding member, 11 ... Support body, 12 ... Semiconductor laser chip, 12a ... Emitter, 13 ... Cathode Electrode, 14 ... anode electrode, 15 ... emitter substrate, 18 ... second reflective layer, 19a ... conductive member, 19b ... conductive member, 20 ... current supply substrate, 21 ... first protective film, 22 ... cathode wiring layer, DESCRIPTION OF SYMBOLS 23 ... Insulating layer, 24 ... Anode wiring layer, 25 ... 2nd protective film, 30 ... Wavelength conversion element, 40 ... Fixing member, 100 ... Light source device, 108a ... Insulating layer, 108b ... Insulating layer, 109 ... Support body electrode , 120 ... current supply substrate, 122 ... cathode wiring layer, 124 ... anode wiring layer, 200 ... light source device, 220 ... current supply substrate, 224 ... anode wiring layer, 400 ... light source device, 500 ... projector, 60 ... image display device, 700 ... monitor device

Claims (10)

A light source device comprising a support and a light emitting element mounted on the support,
The light-emitting element has a light-emitting portion that emits light, and an element electrode formed on a surface facing the support,
The support has a support electrode formed on a surface facing the light emitting element,
The element electrode and the support electrode are conductively connected via a bonding member including a bonding material and a heat transfer member having a higher thermal conductivity than the bonding material in the bonding material. Light source device. The light source device according to claim 1,
The light source device, wherein the heat transfer member is in contact with the element electrode and the support electrode. In the light source device according to claim 1 or 2,
A plurality of the heat transfer members are included in the joining member, and the height of the plurality of heat transfer members in the joining member is substantially equal. In the light source device according to any one of claims 1 to 3,
The light emitting element has a plurality of the light emitting units,
The element electrode is provided corresponding to the plurality of light emitting portions,
On the surface of the light emitting element on which the element electrode is formed, a convex portion having a height substantially equal to the element electrode is provided so as to surround the element electrode,
The heat transfer member is in contact with the convex portion and the support electrode. In the light source device according to any one of claims 1 to 4,
A plurality of the heat transfer members in the joining member are separated from each other by the joining material. The light source device according to claim 5,
The support electrode is divided and provided corresponding to the element electrode,
The light source device, wherein the bonding material is made of an insulating material, and the heat transfer member is made of a conductive material. The light source device according to any one of claims 1 to 6,
A wiring board having a board and a wiring layer;
The light source device, wherein the wiring layer and the support electrode are conductively connected. The light source device according to any one of claims 1 to 6,
A wiring board having a board and a wiring layer;
The wiring layer is sandwiched between the support and the light emitting element,
The light source device, wherein the element electrode and the wiring layer are conductively connected via the bonding member.   A projector comprising the light source device according to any one of claims 1 to 8.   A monitor device comprising the light source device according to claim 1.

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