JP2009003994A - Semiconductor memory device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which has improved adaptability to an external system. <P>SOLUTION: The semiconductor memory device is provided with a memory for storing data and a memory controller which has a function for converting a logic address supplied from a host device to a physical address of the memory and controls the read-out and write-in of the memory, the memory controller creates redundant data from a data body out of data read out from the memory, adds the redundant data to the data main body and outputs them to the outside, a format of the redundant data is one of a plurality of kinds of formats selected by the memory controller. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor memory device including a memory unit that stores data and a memory controller that performs read / write control thereof.

  NAND flash memory is known as one of electrically rewritable nonvolatile semiconductor memories (EEPROM). The NAND flash memory has a smaller unit cell area than the NOR type and can easily be increased in capacity. The read / write speed per cell is slower than that of the NOR type, but by increasing the cell range (physical page length) in which reading / writing is simultaneously performed between the cell array and the page buffer, In particular, high-speed reading / writing is possible.

  Taking advantage of these features, NAND flash memories are used as various recording media including file memories and memory cards.

  In a memory card or the like, a nonvolatile memory and a memory controller are packaged, and reading / writing of the nonvolatile memory is controlled by a command and a logical address supplied from a host. For example, it has been proposed to read data of a plurality of sectors by giving a logical address and the number of sectors from a host (see Patent Document 1).

However, in this type of conventional NAND flash memory, the format of the redundant data added to the data is determined in advance. There was a problem of causing trouble.
JP 2006-155335 A

  An object of the present invention is to provide a semiconductor memory device capable of improving compatibility with an external system.

  A semiconductor memory device according to an aspect of the present invention has a memory unit that stores data, and a function of converting a logical address supplied from a host device into a physical address of the memory unit, and performs reading and writing of the memory unit A memory controller for controlling, the memory controller creates redundant data from a data body of data read from the memory unit, adds the data to the data body, and outputs the data to the outside. The data format is one of a plurality of formats selected by the memory controller.

  According to the present invention, compatibility with an external system can be improved.

  Embodiments of the present invention will be described below with reference to the drawings.

[Configuration of semiconductor memory]
FIG. 1 is a block diagram showing a semiconductor memory according to the present embodiment.

  The semiconductor memory of this embodiment constitutes a memory module integrally packaged by, for example, one or a plurality of NAND flash memories 21 and a memory controller 22 that controls reading / writing. Since all the mounted flash memories 21 are controlled as a logical memory by a single memory controller 22, this is hereinafter referred to as a logical block address NAND flash memory (hereinafter abbreviated as an LBA-NAND memory). That's it.

  The NAND flash memory 21 mounted on the LBA-NAND memory 20 is composed of one or a plurality of memory chips. In FIG. 1, two memory chips chip 1 and chip 2 are shown, but in this case as well, they are controlled by one memory controller 22. The maximum number of memory chips is determined by the current capacity of the regulator and other factors.

  The memory controller 22 includes a NAND flash interface 23 for transferring data to and from the flash memory 21, a host interface 25 for transferring data to and from the host device, and a buffer RAM 26 for temporarily storing read / write data and the like. This is a one-chip controller having a hardware sequencer 27 that is used for MPU 24 that performs data transfer control, firmware / FW sequence control of firmware (FW) in the NAND flash memory 21, and the like.

  Whether the NAND flash memory 21 and the memory controller 22 are one chip or different chips is not essential for the LBA-NAND memory 20.

  FIG. 2 shows a cell array configuration of the memory core portion of the NAND flash memory 21 of FIG.

  The memory cell array 1 is configured by arranging NAND cell units (NAND strings) NU in which a plurality of electrically rewritable nonvolatile memory cells (32 memory cells in the illustrated example) M0 to M31 are connected in series. .

  One end of the NAND cell unit NU is connected to the bit lines BLo and BLe via the selection gate transistor S1, and the other end is connected to the common source line CELSRC via the selection gate transistor S2. Control gates of memory cells M0-M31 are connected to word lines WL0-WL31, respectively, and gates of select gate transistors S1, S2 are connected to select gate lines SGD, SGS.

  A set of NAND cell units arranged in the word line direction constitutes a block serving as a minimum unit of data erasure, and a plurality of blocks BLK0 to BLKn-1 are arranged in the bit line direction as shown in the figure.

  A sense amplifier circuit 3 used for reading and writing cell data is arranged on one end side of the bit lines BLe and BLo, and a row decoder 2 for selecting and driving the word line and the selection gate line is arranged on one end side of the word line. The The figure shows a case where adjacent even-numbered bit lines BLe and odd-numbered bit lines BLo are selectively connected to each sense amplifier SA of the sense amplifier circuit 3 by a bit line selection circuit.

  In the LBA-NAND memory 20 configured as described above, the command, address (logical address or physical address) and data, chip enable signal / CE, write enable signal / WE, read enable signal / RE, ready / busy External control signals such as signals RY / BY are input to the host I / F 25. In the host I / F 25, commands and control signals are distributed to the MPU 24 and the hardware sequencer 27, and addresses and data are stored in the buffer RAM 26.

  A logical address input from the outside is converted into a physical address of the NAND flash memory 21 by the NAND flash I / F 23. Further, under the control of the hardware sequencer 27 based on various control signals, data transfer control and write / erase / read sequence control are executed. The converted physical address is transferred to the row decoder 2 and the column decoder (not shown) via the address register in the NAND flash memory 21. Write data is loaded into the sense amplifier circuit 3 via an I / O control circuit or the like, and read data is output to the outside via an I / O control circuit or the like.

[Memory area]
FIG. 3 is a diagram showing details of the memory area of the LBA-NAND memory according to this embodiment.

  The LBA-NAND memory 20 of the present embodiment has a plurality of data areas (logical block access areas) whose access can be switched by a command. Specifically, in this embodiment, there are two or three data storage areas that are divided according to use and data reliability.

  In the standard operation mode shown in FIG. 3A, each has two data storage areas for storing information having different characteristics. One is a binary data storage area SDA (SLC Data Area) using SLC (Single Level Cell), and the other is a multi-value data storage area MDA (MLC Data Area) using MLC (Multi Level Cell). It is. The binary data storage area SDA is suitable for storing log data of a file system or network communication, and the multi-value data storage area MDA is suitable for storing music, images, various applications, and the like.

  In the optional power-on mode shown in FIG. 3B, in addition to the two data storage areas SDA and MDA that store information having different characteristics, a boot code block that stores a boot code is provided at the head of the memory area.

  In these two modes, the boundary between the binary data storage area SDA and the multi-value data storage area MDA can be arbitrarily changed by an instruction of a command. For example, in a memory having a memory capacity of 4 GB when a memory cell array that can use MLC (4 values) as SLC (2 values) is used and the entire memory area is used as MLC, as shown in FIG. When the storage capacity of the value data storage area SDA is set to 0 MB, 50 MB, 500 MB, and 1 GB, the storage capacity of the multi-value data storage area MDA is 4 GB, 3.9 GB, 3 GB, and 2 GB, respectively.

  FIG. 5 is a timing chart for setting up the binary data storage area SDA.

Here, CLE is a command latch enable, CE is a chip enable, WE is a write enable, ALE is an address latch enable, RE is a read enable, and RY / BY is a ready / busy control signal. ing. Read SDA command “00h” is read at the command input timing, and then set SDA command “A5h” and allocation units 1 ^st , 2 ^nd , 3 ^rd , 4 ^th are sequentially input in five cycles of the address latch. . The allocation unit specifies the boundary position of the binary data storage area SDA as shown in FIG. 6, for example. As a result, since the boundary area between the SDA and the MDA is set in the memory controller 22, the subsequent logical address / physical address conversion processing is executed based on the set boundary area.

  FIG. 7 is a timing chart for checking the size of the binary data storage area SDA.

  The read SDA command “00h” is read at the command input timing, and then the get SDA unit command “B5h” and 4-byte dummy data are sequentially input in five cycles of the address latch. As a result, the boundary area of the SDA is read from the controller 22.

  FIG. 8 is a timing chart for confirming the size of the multi-value data storage area MDA.

  The read SDA command “00h” is read at the command input timing, and then the get MDA unit command “B0h” and 4-byte dummy data are sequentially input in five cycles of the address latch. As a result, the boundary area of the MDA is read from the controller 22.

[Access mode]
In standard operation, the LBA access mode is set. That is, in the NAND flash memory, the memory address is given by a page address and a column address which are physical addresses, but in the LBA access mode, the memory address is given by a sector address and a number of sectors which are logical addresses as in the access to the hard disk. It is done. The logical address is converted into a physical address by the memory controller 22. FIG. 9 shows a sequence in this access mode.

  At the time of reading, as shown in FIG. 9A, first, a read SDA command “00h” or a read MDA command “0Ah” is given. “00h” indicates a read to the binary data storage area SDA, and “0Ah” indicates a read to the multi-value data storage area MDA. Subsequently, over 5 cycles, the number of sectors (lower 8 bits), the number of sectors (upper 8 bits), sector address (lower 8 bits), sector address (intermediate 8 bits), and sector address (upper 8 bits) Enter the address. Next, a code “30h” indicating a read command is input. As a result, the memory controller 22 converts the logical address into a physical address, the converted physical address is stored in the address register in the NAND flash memory 21, and the memory cell array 1 is read by the row decoder 2 and the column decoder (not shown). Accessed and specified data is read. Thereafter, the read command “0xh” is similarly input, but since the sector address and the number of sectors are given as addresses, the subsequent access is performed by the memory controller 22 until the designated number of sectors is read out. What is necessary is just to update continuously. For this reason, in the read sequence of FIG. 9A, a dummy address is given to the subsequent addressing cycle, and access is performed using the internally generated physical address. Note that instead of giving the dummy address and the read command “30h” for the second and subsequent accesses, the continuation command “F8h” is given, and the address update and the generation of the read command are performed by this continuation command. good.

  At the time of writing, as shown in FIG. 9B, first, “80h” or “8Ah” is given as an auto program command. “80h” indicates writing to the binary data storage area SDA, and “8Ah” indicates writing to the multi-value data storage area MDA. Subsequently, over 5 cycles, the number of sectors (lower 8 bits), the number of sectors (upper 8 bits), sector address (lower 8 bits), sector address (intermediate 8 bits), and sector address (upper 8 bits) Enter the address. Subsequently, after inputting write data, a code “10h” indicating a write command is input. Thereby, the memory controller 22 converts the logical address into a physical address, and data is written into the memory cell array 1 by the converted physical address.

  On the other hand, the LBA-NAND memory according to the present embodiment also has a NAND access mode. FIG. 10 shows a sequence in the NAND access mode.

  In the NAND access mode, the address in the order of column address (lower 8 bits), column address (upper 8 bits), page address (lower 8 bits), page address (middle 8 bits), and page address (upper 8 bits) in 5 cycles. Is the same as the LBA access mode. This NAND access mode is the same as the access of the existing NAND flash memory, and is used in applications where it is necessary to access the LBA-NAND memory of this embodiment with a physical address.

[Switch access mode]
Next, switching of these access modes will be described.

  FIG. 11 shows a flow in the standard operation mode. After power-on and the memory controller 22 boots, the LBA access mode is entered, and this continues until a power-down command is input to power off.

  On the other hand, FIG. 12 shows a flow in the optional power-on mode. After power-on and the memory controller 2 boots, the NAND access mode is entered, and the boot code block provided at the beginning of the memory area is accessed. Thereafter, the switching command (Set_Transfer_Protocol) switches to the LBA access mode, and the switching command (Set_Transfer_Protocol) switches to the NAND access mode again. Thereafter, this is repeated as appropriate until the power is turned off.

  According to this optional power-on mode, since the NAND access mode is provided, even a system that can issue only the same address sequence as that of the NAND alone at the time of boot-up can be accessed without any trouble. In addition, since the NAND access mode and the LBA access mode can be appropriately switched by a command, it is possible to flexibly cope with an external system. Further, since the NAND access mode is first set after power-on, it is not necessary to restart for accessing the boot code block.

  Note that the standard operation mode and the optional power-on mode may be switched by some kind of switch or command, or the mode may be switched at every power-on.

  By the way, in the above sequence, as shown in FIG. 13, after the power is turned on, the dummy ID can be output for a certain period until the memory controller 22 boots. That is, in the LBA-NAND memory 20 with the built-in controller 22, the power-on reset busy period may become long, and it is impossible to respond to an external ID read request until the busy period ends. For this reason, in the case where the system that outputs the ID Read request is an error if no data is returned, there is a possibility that a problem occurs in the system boot. For this reason, the present embodiment includes hardware that forcibly outputs a dummy ID from the controller 22 when an ID Read request is received during the boot period.

[Status Read]
In the NAND access mode described above, the address designation does not exceed the address area. However, in the LBA access mode, the logical / physical address conversion is performed by the controller 22 in the memory, so the sector address and the number of sectors are wrongly designated. Then, the physical address after translation may exceed the address area. For this reason, in this embodiment, when the physical address converted by the sector address and the number of sectors designated by the host system exceeds the address area of the flash memory 21, an address area error is notified by reading the status. I am doing so.

  FIG. 14 is a timing chart of LBA access with status read.

  First, a write or read command is input from the host system to the memory 20, and an address is subsequently input in, for example, five cycles. Subsequently, a status read command is input from the host system to the memory 20. In response to this, the memory controller 22 determines whether the internal physical address converted from the logical address deviates from the address area of the flash memory 21. If it is within the address area, “no address area error” is notified as the status, and if it exceeds the address area, “address area error” is notified as the status. As a result, it can be seen that an incorrect address is given on the host system side, and it becomes easy to deal with the problem analysis.

[data structure]
FIG. 15 shows a data structure used in the LBA-NAND memory of this embodiment.

  In the binary data storage area SDA and the multi-value data storage area MDA, when the sector multiple is 1 (SM = 1), both reading and writing have the data format of 512 bytes (data body) and 16 bytes (redundant data). A total of 528 bytes is used as a transfer unit.

  The format of 16-byte redundant data of read data can be selected from among several format types by a configuration command from the host system. For example, Type a can be a smart media format, Type b can be an ECC Pass / Fail result output, Type c can be All 1 data, and one of these can be selected by a command. These redundant data are generated and read in the memory controller 22 in the LBA-NAND memory 20 at the time of reading.

  For write data, 16-byte redundant data is dummy data. Of the transferred 528 bytes of data, 512 bytes are stored in the NAND flash flash memory 21. In the LBA-NAND memory 22, the extended 16 bytes are deleted from the transferred data, and an ECC code matching the write data is generated internally, and this is stored in the flash memory 22 together with the write data.

  The ECC data is generated by the memory controller 22 in the LBA-NAND memory 20. It is the memory controller 22 in the LBA-NAND memory 20 at the time of writing and the host system at the time of reading that confirms the correctness of the data transferred by the ECC data.

  It is also possible to read / write data with 512 bytes without 16-byte redundant data as a transfer unit. These do not require switching by a configuration command for instructing the change or switching of the data structure.

  By setting sector multiple SM = 4, the data transfer unit can be 2112 bytes. This means that the data format of SM = 1 is repeated four times. Type 2 and Type 3 are differences in whether 16-byte redundant data is recorded in each data transfer unit of 528 bytes or is collectively recorded at the end of 64 bytes.

  In addition, this invention is not limited to embodiment mentioned above. For example, in the above embodiment, the NAND type is used as the flash memory, but a NOR type other type of memory may be used.

1 is a diagram showing a configuration of an LBA-NAND memory system according to an embodiment of the present invention. It is a figure which shows the memory cell array structure of the same LBA-NAND memory. It is a figure which shows the data storage area of the LBA-NAND memory. It is a figure which shows the example of the various data storage amount of the LBA-NAND memory. It is a timing chart which shows the setup procedure of the binary data storage area SDA of the LBA-NAND memory. It is a figure which shows the example of a data storage area setting of the LBA-NAND memory. It is a timing chart which shows the binary data storage area confirmation procedure of the LBA-NAND memory. It is a timing chart which shows the multi-value data storage area confirmation procedure of the LBA-NAND memory. It is a figure which shows the read / write sequence in the LBA access mode of the same LBA-NAND memory. It is a figure which shows the read / write sequence in NAND access mode of the same LBA-NAND memory. It is a flowchart which shows the access procedure in the standard operation mode of the LBA-NAND memory. It is a flowchart which shows the access procedure in the optional power-on mode of the same LBA-NAND memory. 4 is a timing chart when the LBA-NAND memory is powered on. It is a timing chart for demonstrating the address area error notification function of the same LBA-NAND memory. It is a figure which shows the data format used with the LBA-NAND memory.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Memory cell array, 2 ... Row decoder, 3 ... Sense amplifier circuit, 20 ... LBA-NAND memory, 21 ... NAND flash memory, 22 ... Memory controller, 23 ... NAND flash interface, 24 ... MPU, 25 ... Host interface, 26 ... buffer RAM, 27 ... hardware sequencer.

Claims (5)

A memory unit for storing data;
A memory controller that has a function of converting a logical address supplied from a host device into a physical address of the memory unit, and controls reading and writing of the memory unit;
With
The memory controller creates redundant data from the data body of the data read from the memory unit, adds the data to the data body, and outputs the data to the outside.
The format of the redundant data is one of a plurality of types of formats selected by the memory controller.   2. The semiconductor memory device according to claim 1, wherein the memory controller determines a format of the redundant data by an external command.   The memory controller reads data from the memory unit, creates redundant data in a format specified by an externally input command, adds the redundant data to a data body, and outputs the data to the outside. The semiconductor memory device according to claim 1 or 2.   The memory controller reads data from the memory unit, creates an ECC code from the data body, adds the ECC code to at least a part of the redundant data, and outputs it to the outside together with the data body. The semiconductor memory device according to any one of 1 to 3.   The memory controller creates an ECC code from the data body by deleting redundant data from data including the data body and redundant data input from the outside, and writes the ECC code together with the data body in the memory unit 5. The semiconductor memory device according to claim 1, wherein:

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