JP2009099633A - Semiconductor light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device forming an emission region into an optional shape, and emitting emission light having a stable light emission characteristic and high luminance even in increasing or decreasing the emission region. <P>SOLUTION: The light emitting device includes: a plurality of semiconductor light emitting elements 2; a pedestal 3 capable of fixing the semiconductor light emitting elements 2; and a sealing cap 4 capable of sealing the semiconductor light emitting elements 2 in an internal region formed by connection to the pedestal 3. The light emitting device is characterized in that a plurality of through-holes 10 are formed on one surface 26 of the sealing cap 4, light emitted from the plurality of semiconductor light emitting elements 2 can pass through the through-holes 10; and the light emitting device has a positioning guide 28 allowing the arrangement direction of the plurality of through-holes 10 to be recognized. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light emitting device, specifically, a light emitting device including a nitride compound semiconductor light emitting device.

  Nitride-based compound semiconductor light-emitting elements emit light of a bright color that is small and power efficient. In addition, a light emitting element which is a semiconductor element does not have a concern about a broken ball. Further, it has excellent initial driving characteristics and is strong against vibration and repeated on / off lighting. Because of such excellent characteristics, semiconductor light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) are used as various light sources. In particular, when a semiconductor laser is used as a light source, the electro-optical conversion efficiency is higher than that of a light-emitting diode, and a significant increase in output is possible. Therefore, high brightness such as light sources for projectors and headlights for vehicles is used. Supply as a white light source is expected.

  For example, Patent Document 1 discloses a light source device capable of outputting white light using a semiconductor laser as a light source, which is shown in FIG. In the illumination light source device 100 of FIG. 14, a plurality of semiconductor laser elements 101 are mounted on a heat sink 102, a diffusion lens 103 is disposed in front of each semiconductor laser element 101, and a vacuum glass tube 105 in which argon gas or the like is enclosed. The phosphor 104 is applied to the inner wall surface. The laser beam light output from the semiconductor laser element 101 is diffused by the diffusion lens 103, and the fluorescent material of the phosphor 104 is excited by this diffused light, and visible light such as white light is obtained.

  Further, the illumination light source devices 200 and 300 shown in FIG. 15A and FIG. 15C show another embodiment of the illumination light source device 100 of FIG. It has the following structure. The illumination light source device 200 of FIG. 15A is a light bulb type, and FIG. 15B shows a plan view of FIG. The illumination light source device 300 shown in FIG. 15C is a fluorescent lamp type. In the illumination light source device 200, the heat sink 102 is attached to the socket portion 210, and a plurality of semiconductor laser elements 101 are mounted on the heat sink 102. Here, when the semiconductor laser element 101 has a single stripe structure, the laser beam becomes a vertically long elliptical FFP (Far Field Pattern) and has directivity. Therefore, as shown in FIG. 15B, by changing the arrangement direction of each element 101, the directionality of the laser beam is diversified, and as a result, the pattern of the output light as a whole approaches omnidirectionality. Like that.

  However, for example, when four semiconductor laser elements 101 are mounted, as shown in FIG. 15B, these elements 101 are arranged in a circular shape. It is necessary to determine the arrangement position of each element 101 so as to reduce the directivity of the output light. That is, since the arrangement position of each element 101 changes according to the increase / decrease in the number of elements 101, the manufacturing process becomes complicated.

  Furthermore, if the number of mounted semiconductor laser elements 101 is increased, the radiant flux from the light source increases, so that the amount of wavelength conversion by the phosphor 104 can also change. Although a specific description of the relationship between the increase / decrease in the number of mounted semiconductor laser elements 101 and the amount of phosphor is not disclosed in Patent Document 1, the vacuum glass tube 105 coated with a certain amount of phosphor 104 is used. If only the output amount is changed, the color mixing ratio between the primary light that has not been wavelength-converted and the secondary light that has been wavelength-converted will change depending on the output amount, and the hue of the mixed light that is relatively obtained will be different. There is a risk of it. In order to avoid this and obtain a light emitting device capable of emitting a constant hue regardless of increase or decrease of the output amount, it is necessary to determine the amount of phosphor 104 according to the output amount from the light source. That is, the arrangement position of the element 101 and the amount of the phosphor 104 described above are controlled by the number of the semiconductor laser elements 101 mounted, and the manufacturing process becomes more complicated.

Further, in the case of the conventional illumination light source devices 100, 200, and 300 shown in FIGS. 14 and 15, emitted light is emitted from the entire surface of the vacuum glass tube 105. Therefore, in the illumination light source devices 100, 200, and 300, the shape of the emission region depends on the shape of the vacuum glass tube 105. However, since the vacuum glass tube 105 needs to seal the internal region where the semiconductor laser element 101 is placed, its shape and size are limited. In addition, if the surface area of the vacuum glass tube 105 is increased so as to increase the emission region, this leads to a reduction in luminous flux per unit area, that is, luminance. Furthermore, if the inner wall surface of the vacuum glass tube 105 is enlarged, there is a technical difficulty in making the thickness of the phosphor 104 applied thereto uniform, which may cause color unevenness due to the site and peeling of the phosphor. There was also.
JP-A-7-282609

  The present invention has been made in view of such conventional problems. A main object of the present invention is to provide a light-emitting device that can have an emission region of any shape, and that can emit high-luminance emission light with stable emission characteristics even when the emission region is increased or decreased. It is in.

  In order to achieve the above object, a first light emitting device according to the present invention includes a plurality of semiconductor light emitting elements, a pedestal capable of fixing the semiconductor light emitting elements, and an internal region formed by coupling the pedestals. A plurality of through holes formed in one surface of the sealing cap, and light emitted from the semiconductor light emitting element is passed through the through holes. It has a positioning guide which can pass through and can recognize the arrangement direction of a plurality of through holes.

  Further, the second light emitting device of the present invention is characterized in that a plurality of through holes are linearly arranged and the positioning guide is provided so as to be substantially parallel to the arrangement direction of the through holes.

  Further, the third light emitting device of the present invention is characterized in that a guide surface orthogonal to one surface where the through hole is formed is formed on the side surface of the sealing cap as a positioning guide.

  Moreover, the 4th light-emitting device of this invention is characterized by the positioning guide being provided in the base.

  The fifth light emitting device of the present invention is characterized in that light emitted from two or more semiconductor light emitting elements passes through one through hole.

  The sixth light emitting device of the present invention is characterized in that 15 to 100% of the opening area of the through hole is occupied by the FFP of the semiconductor light emitting element.

  In addition, the seventh light emitting device of the present invention has a light transmitting body that closes the through hole, and the light transmitting body contains a wavelength conversion member.

  Further, the eighth light emitting device of the present invention is characterized in that one light transmitting body is disposed in each through hole.

  Further, the ninth light emitting device of the present invention is characterized in that the opening diameter of the through hole is increased in accordance with the traveling direction of light.

  In the tenth light emitting device of the present invention, the minimum value of the opening area of the through hole is in a range satisfying the following mathematical formula.

Ａは、貫通孔の開口面積の最小値である。Ｌは、半導体発光素子と貫通孔までの距離である。Ｒは、半導体発光素子２からの出射光の広がり角である。「半導体発光素子からの出射光の広がり角」とは、ピーク強度の１／ｅ²における全角である。

A is the minimum value of the opening area of the through hole. L is the distance between the semiconductor light emitting element and the through hole. R is the spread angle of the light emitted from the semiconductor light emitting element 2. The “divergence angle of light emitted from the semiconductor light emitting device” is a full angle at 1 / e ² of the peak intensity.

  In an eleventh light-emitting device of the present invention, the semiconductor light-emitting element is a semiconductor laser element or an edge-emitting LED having an emission peak wavelength in the range of 350 nm to 470 nm.

  The twelfth light emitting device of the present invention is characterized in that the light transmissive member further contains a filler.

  The thirteenth light emitting device of the present invention is characterized in that it has an outer cap that is connected to the base and further covers the outer side of the sealing cap.

  According to the first to sixth light emitting devices of the present invention, by setting the number of light sources emitted from the through hole to a plurality, the emission area of the light emitted from the opening of the through hole is changed to the opening of the opening. The brightness of the emitted light can be increased close to the region. Moreover, by having the positioning guide, it is possible to easily determine the arrangement direction of the through holes in one light emitting device. As a result, when a plurality of light emitting devices are arranged in parallel, the relative positions and orientations of the through holes of the light emitting devices adjacent to each other can be easily recognized, and the overall positioning of the through holes can be accurately performed. Moreover, the light-emitting device can be used as a unit device, and the entire light-emitting region can be formed in a desired shape by freely arranging them in parallel.

  According to the light emitting device of the seventh or eighth aspect of the invention, the mixed light of the light source and the wavelength converted light excited by the wavelength converting member 7 can produce outgoing light having a wavelength different from that of the light source, that is, a desired hue. Can be emitted. In particular, by arranging one light transmitting body in each through-hole, the ratio between the output amount from the light source and the wavelength-converted light amount in each through-hole can be made substantially the same, that is, the hue and brightness are substantially uniform. Can be. As a result, the hue and brightness of the light in the entire light emitting region can be made substantially constant even if the light emitting region increases or decreases as the number of mounted light emitting devices increases or decreases.

  According to the light emitting devices of the eighth to eleventh inventions, the light emitted from the semiconductor light emitting element is guided to the through hole with high efficiency, and the light once traveling to the through hole side returns to the element side again. Can be effectively suppressed. Thereby, the light extraction efficiency of the light emitting device is improved.

  According to the light emitting device of the twelfth aspect, the directivity characteristic of the emitted light from the light emitting device can be controlled, and the emitted light with reduced color unevenness can be obtained.

  According to the light emitting device of the thirteenth aspect, the airtightness of the semiconductor light emitting element is increased, and the life characteristics of the light emitting device are improved.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a semiconductor light emitting device for embodying the technical idea of the present invention, and the present invention does not specify the semiconductor light emitting device as follows. In addition, the member shown by the claim is not what specifies the member of embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the component parts described in the embodiments are not intended to limit the scope of the present invention unless otherwise specified, and are merely explanations. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and the plurality of elements are shared by one member, and conversely, the function of one member is constituted by a plurality of members. It can also be realized by sharing.

  In this specification, “vertical direction” refers to the depth direction of the through hole, and “horizontal direction” refers to a direction orthogonal to the vertical direction. Furthermore, the “opening shape” and “opening diameter” of the through-hole respectively indicate the shape of the region that opens in the horizontal direction of the through-hole and the minimum diameter of the periphery that constitutes the opening region. In addition, the “opening area” of the through hole means an area based on the opening shape. Further, in the present specification, “diameter” means a diameter, but even if it is defined by “diameter”, it is not limited to a circle but may mean a width and a length.

(Embodiment 1)
As an example of the light-emitting device 1 according to Embodiment 1, FIG. 1 is a perspective view, and FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. The light emitting device 1 mainly includes a pedestal 3, a sealing cap 4 connected to the pedestal 3, and a plurality of semiconductor light emitting elements 2 in an internal region substantially sealed by the pedestal 3 and the sealing cap 4. Prepare. A plurality of through holes 10 are formed on one surface 26 of the sealing cap 4, and the through holes 10 are closed by the light transmitting body 5. Further, in the light emitting device 1, each through hole 10 is located in the main light traveling direction of the light emitted from the semiconductor light emitting element 2, and the plurality of lights emitted from the plurality of semiconductor light emitting elements 2 It passes through the through hole 10. Furthermore, the light emitting device 1 has a positioning guide 28 that can recognize the arrangement direction of the through holes 10.

  Moreover, the light-emitting device 1 of FIG.1 and FIG.2 has fixed the stem pillar 9 to the center area | region of the substantially disk-shaped base 3. FIG. A semiconductor laser element, which is an example of the semiconductor light emitting element 2, is mounted on the side surface of the stem column body 9 via a conductive adhesive such as Au—Sn. As a result, the semiconductor laser element 2 is connected to the pedestal 3 in a thermally conductive state. However, the semiconductor light emitting element 2 can also be placed directly on the pedestal 3 without using the stem column 9. The semiconductor laser element 2 is electrically connected to the lead 8 via a conductive member such as a wire. The lead 8 protrudes below the pedestal 3, and the lead 8 is electrically connected to the external electrode, whereby electric power is supplied to the semiconductor laser element 2. The pedestal 3 and the stem column 9 are individually named according to the site and are not necessarily different members. It is also possible to configure both of them as a connected body of the same member or integrally.

  The semiconductor laser element 2 is mounted in a posture in which the light emitting surface 13 that emits light is spaced apart from and opposed to the through hole 10. The light emitted from the light emitting surface 13 travels upward as indicated by the arrow in FIG. 2, passes through the through hole 10 and the light transmitting body 5 fixed to the through hole 10, and Released to the outside. In addition, the light emission surface in this specification does not mean only the surface from which light is emitted from all the surfaces, but also includes the surface from which light is emitted from a part of the surface. Further, in this specification, the term “upper” in the position configuration or the like is not limited to the case where it is formed so as to be in contact with the upper surface of the substrate, but also includes the case where it is formed above the substrate so as to be separated. Used in.

  In the example of FIGS. 1 and 2, the sealing cap 4 connected to the pedestal 3 is a substantially annular shape having a cavity inside, and a side surface 29 erected upward from the vicinity of the periphery of the pedestal 3, and the side surface 29 And an upper surface 26 that closes the upper portion. That is, the sealing cap 4 is configured with the side surface 29 and the upper surface 26. An upper surface 26 of the sealing cap is substantially parallel to the main surface of the base 3, and a plurality of through holes 10 are formed. The number of through holes 10 formed is not particularly limited as long as it is plural, and is three in the example of FIGS. 1 and 2. Moreover, it is preferable that the through-hole 10 is circular shape in planar view from the upper part. This is because, as will be described in detail later, light emitted from a plurality of light sources can be efficiently passed through the single through hole 10.

  Further, the through-holes 10 are formed in parallel with each other in a straight line. In the example of the through hole 10 in FIGS. 1 and 2, the connection 27 (the chain line in FIG. 1) between the circular centers of each through hole 10 is substantially collinear with the diameter of the upper surface 26 of the sealing cap. It is arranged as follows.

(Positioning guide 28)
The light emitting device 1 has a positioning guide 28 that can recognize the arrangement direction of the plurality of through holes 10. The positioning guide 28 is a structure that can recognize the arrangement direction of the through holes 10 regardless of any method such as a non-contact method or a contact method. The positioning guide 28 can be processed into all members constituting the light emitting device 1, and the shape and forming method thereof are not particularly limited. For example, a band-shaped, planar, or arbitrary-shaped mark parallel to the connection line 27 described above can be formed on the upper surface 26 of the sealing cap or a part of the periphery, and this can be used as the positioning guide 28. In addition, a part of the member of the light emitting device 1 can be cut and the notched portion can be used as the positioning guide 28. However, the positioning guide 28 is preferably provided so as to be substantially parallel to the arrangement direction of the through holes 10. This is because the alignment direction of the through holes 10 can be easily recognized by the positioning guide 28 by making the alignment directions of the positioning guides 28 and the through holes 10 substantially the same.

  In the example of FIG. 1, the light emitting device 1 has a flat surface 24 in a posture substantially perpendicular to the upper surface 26 on a part of the columnar side surface 29 of the sealing cap 4. The flat surface 24 is perpendicular to the upper surface 26 of the sealing cap 4 and is parallel to the arrangement direction of the through holes 10. That is, the arrangement direction of the through holes 10 can be recognized by the inclination direction of the flat surface 24, and functions as the positioning guide 28 described above. In the embodiment, the plane 24 is referred to as a guide surface for convenience.

  As shown in FIG. 1, the guide surface 24 has a rectangular shape, and one side thereof constitutes a part of the periphery of the upper surface 26. In the example of FIG. 1, one side of the guide surface 24 corresponds to a circular chord portion in the peripheral shape of the upper surface 26, and is positioned substantially parallel to the arrangement direction of the through holes 10. That is, it is also possible to recognize the arrangement direction of the through holes 10 using this string as the positioning guide 28.

  If a mark that can be viewed two-dimensionally as the guide surface 24 in FIG. 1 is used as the positioning guide 28, the positioning guide 28 can be recognized mainly from the upper surface side and the side surface side of the light emitting device 1, that is, from two directions. That is, since the arrangement direction of the through holes 10 can be identified from many directions, misidentification of identification in the arrangement direction of the through holes 10 is limited, which is preferable.

  The light emitting device 1 having the positioning guide 28 as described above can easily recognize the arrangement direction of the through holes 10 when the plurality of light emitting devices 1 are arranged in parallel. FIG. 3 is a plan view seen from the top when a plurality of light emitting devices are arranged in one direction. 3A uses the light emitting device 1 having the positioning guide 28, and FIG. 3B uses the light emitting device 500 that does not have the positioning guide 28. Although the through holes 10 in the individual light emitting devices 500 in FIG. 3B are arranged in a straight line, all the through holes 10 are aligned on the same straight line when a plurality of light emitting devices 500 are connected in series. They are not arranged, that is, there are variations in the arrangement direction in the entire through-holes 10.

  This is because the peripheral position of the upper surface 26 of the light emitting device 500 is circular, and the reference position in the mounting direction of the light emitting device 500 is not determined. That is, in the light emitting device 500, the arrangement direction of the through-holes 10 becomes various with the rotation at the same position without changing the mounting position. That is, the arrangement direction of the through holes 10 cannot be recognized from the external shape of the light emitting device, and thereby the arrangement directions of the through holes 10 of the adjacent light emitting devices 1 do not match. Therefore, if all the adjacent through holes 10 are arranged in a straight line, the direction of arrangement of the through holes 10 is visually recognized from the upper surface, and the rotation of each light emitting device 500 is performed so as to be on the same straight line. It is necessary to adjust the position. Such a method is cumbersome and reduces accuracy.

  On the other hand, in the light emitting device 1 of FIG. 3A, the arrangement direction of the through holes 10 can be recognized by the positioning guide 28. Therefore, if the light emitting devices 1 are arranged in parallel on the basis of this, the arrangement of the through holes 10 is naturally performed. The direction is also determined. That is, the arrangement direction of the through holes 10 can be easily and accurately controlled with the positioning guide 28. In particular, as shown in the example of FIG. 3A, the positioning guide 28 using the external shape is preferable because the positioning guide 28 can easily adjust the arrangement direction of both the light emitting device 1 and the through holes 10. It is.

(Embodiment 2)
Further, the positioning guide 28 is not limited to a single one, and a single light-emitting device can have a plurality of positioning guides 28. Such a light-emitting device 1b is described as a second embodiment. The light emitting device 1b shown in FIG. 4 includes two positioning guides 28a and 28b, both of which are positioned in parallel with the direction in which the through holes 10 are arranged.

  By having the plurality of positioning guides 28, it becomes easier to recognize the arrangement direction of the through holes 10. In addition, as shown in the example of FIG. 4, the light emitting device 1b can be easily arranged two-dimensionally by having the parallel positioning guides 28 at the upper and lower positions of the upper surface 26 of the sealing cap. Specifically, in one light-emitting device 1b, a plurality of light-emitting devices 1b are arranged adjacent to each other so that the positioning guides of other light-emitting devices are arranged in the extension line direction of the positioning guides 28a and 28b (the left-right direction in FIG. 4). Are arranged in parallel. At the same time, a plurality of light emitting devices 1b are sequentially arranged in parallel so that the positioning guides 28a and 28b facing each other are adjacent to each other so that the positioning guides 28 of other light emitting devices are parallel (in the vertical direction in FIG. 4). The light emitting devices 1b can be easily arranged in a matrix.

  However, when a plurality of positioning guides are provided, their arrangement directions are not necessarily parallel to each other, and both arrangement directions may intersect. In this case, it is preferable that the arrangement direction of at least one positioning guide is the same as the arrangement direction of the through holes 10 so that the arrangement direction of the through holes 10 can be easily recognized by the positioning guide.

  Further, a single light emitting device having such a positioning guide is used as a unit body, and these are arranged in parallel vertically and horizontally, so that an assembly of light emitting devices having relatively desired light emitting regions can be formed. That is, the shape of the aggregate can be made arbitrary, and as a result, the shape of the light emitting region of the emitted light emitted from the aggregate can be freely controlled. For example, an arbitrary shape such as a straight or rectangular shape as shown in FIG. 3A or a square shape as shown in FIG. 4 can be realized.

(Embodiment 3)
Further, the positioning guide may be provided not only on the member in which the through hole 10 is formed as described above, but also on other members that connect this member. Such a light emitting device 1h is shown as a third embodiment in a plan view of FIG. In the example of FIG. 5, the positioning guide is not provided in the sealing cap 4 in which the through hole 10 is formed. On the other hand, a positioning guide is formed on the pedestal 3 connecting the sealing cap 4. Thereby, while being able to recognize the arrangement direction of the through-hole 10, the connection position of the base 3 and the through-hole 10 can be controlled easily.

  Specifically, the pedestal 3 has a triangular notch 31a at the peripheral edge thereof and at the ends of the diameter of the pedestal 3 (both left and right ends of the pedestal 3 in FIG. 5). When the sealing cap 4 is fixed to the pedestal 3, the notch 31 a of the pedestal 3 is adjusted so that one end of the through hole 10 on the sealing cap 4 is close to the triangular cap of the notch 31 a. , And so as to be positioned on the connection line 27 that connects the centers of the through holes 10. Thereby, it can confirm that the notch part 31a and the through-hole 10 were arranged linearly, and the through-hole 10 was arranged in the predetermined position on the base 3. FIG.

  Further, when the plurality of light emitting devices 1h are arranged in parallel, the through holes 10 between the adjacent light emitting devices 1h are continuously linearly aligned by aligning the cutout portions 31a between the adjacent light emitting devices 1h. Can be placed. That is, the notch 31 a provided in the pedestal 3 serves as a positioning guide that can recognize the direction of the through hole 10 and guide the connection position between the pedestal 3 and the sealing cap 4. Furthermore, it is preferable because the parallel direction of the through holes 10 in the plurality of light emitting devices 1h can be reliably controlled. Needless to say, the positioning guide 31a formed on the base 3 can have various shapes and structures as in the first embodiment.

(Embodiment 4)
On the other hand, the light emitting device can also include positioning guides on both the member forming the through hole 10 and the other member connecting the member. Such a light emitting device 1i is shown as a fourth embodiment in a plan view of FIG. In the example of FIG. 6, the same positioning guide 28 as in the first or second embodiment is provided on the sealing cap 4, so that the arrangement direction of the through hole 10 can be recognized immediately. In addition, the pedestal 3 has the same positioning guide 31a as in the third embodiment. As a result, the connecting position between the base 3 and the sealing cap 4 can be identified more easily and reliably.

  In addition to the triangular positioning guide 31a provided in the left-right direction, the pedestal 3 in FIG. 6 has one end of the diameter of the pedestal 3 in the vertical direction perpendicular to the left-right direction (upper part in FIG. 5). And has a rectangular cut 31b. The notch 31b has a function as a positioning guide capable of recognizing the arrangement direction of the through holes 10 as well as the positioning guide 31a described above, and can also guide the rotational position of the base 3. That is, when the outer peripheral shape of the pedestal 3 is circular, the shape is the same regardless of the rotation angle, so it is difficult to specify the reference rotation direction. Therefore, as shown in FIG. 6, by making the shape of the pedestal 3 asymmetric in the vertical direction by the notch 31b, the notch 31b becomes a mark in the circular rotational direction, and the reference position of the pedestal 3 can be easily specified. That is, the notch guide 31 b can be a reference position guide that can recognize the rotation direction of the base 3.

  In the example of FIG. 6, the positioning of each member becomes easier and the manufacturing process is simplified. That is, the rotation direction of the pedestal 3 is controlled by the reference position guide 31 b of the pedestal 3, the direction of the sealing cap 4 is recognized by the positioning guide 28, and the positioning guide 28 of the sealing cap 4, By aligning with the positioning guide 31a, each member can be easily joined to an appropriate positional relationship. That is, by providing the guides on the pedestal 3 and the sealing cap 4, the rotation direction of the pedestal 3, the arrangement direction of the through-holes 10, the joining position of the pedestal 3 and the sealing cap 4, and thus on the pedestal 3. The positioning of the light emitting element to be placed and the through hole 10 is preferable because it is easily determined. Hereinafter, individual members of the light emitting device will be described.

(light source)
As the semiconductor light emitting element 2 employed as the light source of the light emitting device 1, various devices such as a light emitting diode and a semiconductor laser can be used. However, as the light source of Example 1, a semiconductor laser element or an edge-emitting LED having an emission peak wavelength at 350 nm to 470 nm is preferable, and a semiconductor laser element is particularly preferable. This is because the laser light emitted from the semiconductor laser element has high directivity and easily guides the light in one direction. As a result, the laser light from the light source can be extracted to the outside of the light emitting device with high efficiency, and high-output and high-luminance emission light can be realized. Further, if the light source has an emission peak wavelength in the above range, the Stokes shift of color conversion can be reduced with a predetermined wavelength conversion substance, and essential energy conversion can be effectively performed. In addition, it is possible to emit a predetermined hue with only a single wavelength conversion member 7 by using the transmitted light of the laser light itself. Thereby, adjustment of optical characteristics becomes easy and conversion efficiency can be increased.

The semiconductor light emitting device itself may be any semiconductor light emitting device manufactured by a method and structure known in the art, and is usually configured by laminating a semiconductor layer on a substrate. For example, in the semiconductor laser element 2, an active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer, and the active layer has a multiple quantum well structure or a single quantum well structure. It is preferably formed from a group III-V nitride semiconductor. As a specific example of a semiconductor laser device made of a group III-V nitride semiconductor, a nitride semiconductor made of non-doped Al _x Ga _1-x N (0 ≦ x ≦ 1) as a base layer on a substrate of sapphire, SiC, GaN or the like. And an n-type contact layer made of Si-doped Al _x Ga _1-x N (0 <x <1) (optional), Si-doped In _x Ga _1-x N (0 ≦ x ≦ 1) An anti-cracking layer (can be omitted), an n-type cladding layer having a superlattice structure made of non-doped Al _x Ga _1-x N (0 ≦ x ≦ 1) and Si-doped GaN, an n-type guide layer made of GaN, Active layer having a multiple quantum well structure having well layer non-doped In _x Ga _1-x N (0 <x <1) and barrier layer Si-doped or non-doped In _x Ga _1-x N (0 <x <1) , Mg-doped _{Al x Ga 1-x N (} 0 <x <1) That the cap layer, the p-type guide layer made of undoped GaN, undoped _{Al x Ga 1-x N (} 0 ≦ x ≦ 1) and the p-type cladding layer is a super lattice structure consisting of a Mg-doped GaN, made of Mg-doped GaN A p-type contact layer is laminated. Further, this semiconductor laser element can have a high reflectance by having a light reflecting film made of an oxide film on the reflecting surface of the end face of the optical waveguide. In addition, a metal oxide film can be used.

  In addition, a light emitting diode can be used as the semiconductor light emitting element 2 of the light source. In this case, an end surface light emitting type is preferable. An edge-emitting diode is a type of light-emitting diode that is classified from the structural surface, and refers to a device that extracts light from the end surface of an active layer in the same manner as a semiconductor laser. This makes it possible to output light from the end face by raising the refractive index of the active layer to cause an optical waveguide action. By narrowing the output area in this way, the directivity of light can be increased, and the amount of light received per unit area of the wavelength conversion member 7 described later can be increased. In other words, the amount of light per unit area converted by the wavelength conversion member 7 increases, so that relatively high output light can be obtained from the apparatus.

(pedestal)
The semiconductor light emitting element 2 is placed on the pedestal 3. The pedestal 3 fixes the semiconductor light emitting element 2 in an airtight state in an internal space configured with the sealing cap 4. The shape of the pedestal 3 is not particularly limited. For example, in a plan view, the shape of the pedestal 3 may be various shapes such as a circle, a semicircle, and an ellipse in addition to a polygon such as a square and a rectangle. In the pedestal 3 of FIG. 1, the inner space can be made airtight by joining a substantially cylindrical sealing cap 4 that is partially deformed to a substantially disk shape having a flat surface.

In addition, the material of the base 3 and the stem column 9 is preferably a material having good adhesion to the sealing cap 4 and good heat dissipation. For example, Cu or Cu contains at least one of W and Mo. Examples include alloys, metals such as Fe, Co, Ni, Au, Al, brass, Kovar, and stainless steel, and ceramics such as Al ₂ O ₃ , SiC, AlN, and diamond. In addition, the base 3 and the stem column 9 are preferably a combination of materials having similar coefficients of thermal expansion.

Moreover, the base 3 may be comprised from a some member and site | part, and in this case, each member and site | part are joined by brazing, resistance welding, soldering, etc., such as Au-Sn. Furthermore, an insulating material can be used when the leads 8 are provided on the base 3. As the insulating material, ceramics such as ZrO ₂ , Al ₂ O ₃ , AlN, and SiC, resins such as silicon, epoxy, and peak (polyether ether ketone), or low-melting glass can be used.

  Moreover, it is preferable that the semiconductor light emitting element 2 is mounted on the pedestal 3 via a heat dissipation member. The heat radiating member preferably plays a role of releasing heat generated in the semiconductor light emitting element and has a high thermal conductivity. In addition, those having a thermal expansion coefficient close to that of a semiconductor light emitting device, those capable of relieving thermal stress, those whose surface is not composed of an organic material and composed of an inorganic material, A material having any or all of materials that can be released (for example, AlN, diamond, Cu-diamond) is preferable. Furthermore, a material having a self-shape holding force is more preferable, whereby the members can be easily assembled. Specifically, SiC, AlN, Cu, Cu—W, Cu—Mb, Cu—diamond, diamond, Si, and the like can be given. As a method of adhering the semiconductor light emitting element 2 to the heat radiating member as described above, an alloy such as Au—Sn or a film using a multilayer film structure such as Ti / Pt / Au or Ti / Pt / Au / Pt is used. An example is heat fusion.

  Moreover, as a mounting method of the semiconductor light emitting element 2, various methods such as face-down mounting, face-up mounting, and flip mounting can be employed. Face-down mounting is a method in which the semiconductor side of a semiconductor light emitting device is mounted on a mounting base (heat dissipation member). In face-up mounting, the substrate side of the semiconductor light emitting element is mounted on a mounting base (heat dissipating member). Flip chip mounting is a structure in which when a chip is mounted, the chip surface and the mounting substrate are connected by conductive protruding terminals (bumps) arranged on the array.

  In the present invention, the wavelengths of the plurality of semiconductor light emitting elements may be the same wavelength band or different. In particular, semiconductor light emitting elements corresponding to RGB may be arranged on the same heat radiating member. In this case, it may be arranged in a separated state on the heat radiating member, or two semiconductor light emitting elements may be arranged on one semiconductor laser element arranged on the heat radiating member. . In addition, a two-wavelength integrated laser in which the other two laser elements are formed as one element may be disposed on one semiconductor light emitting element disposed on the heat dissipation member. The reverse is also acceptable. Even in the case of such a semiconductor laser element, heat can be effectively radiated.

(Sealing cap)
The sealing cap 4 is connected to the pedestal 3 by resistance welding, soldering, or the like, and puts the semiconductor light emitting element 2 placed on the pedestal 3 in an airtight sealed state. Accordingly, the material of the sealing cap 4 is preferably a material having good adhesion between the light transmitting body 5 that closes the plurality of through holes 10 formed on the upper surface 26 and the pedestal 3, and further has excellent heat dissipation. Those are more preferred. Examples include Kovar, Ni, Co, Fe, brass and the like. Of these, nickel and kovar, which have high thermal conductivity and can be resistance-welded using projection, are preferable.

  Further, the sealing cap 4 has a shape capable of maintaining the semiconductor laser element included in the sealing region formed by the connection with the base 3 in an airtight state and forming a plurality of through holes 10. Therefore, the shapes of the sealing cap 4 and the pedestal 3 depend on each other. For example, it may be configured by a pedestal 3 that is in the shape of a recess and is open at the top, and a planar sealing cap 4 that seals the upper surface. Moreover, it is preferable to reduce the number of parts which exist in a sealing area from a viewpoint of maintaining the airtight state in a sealing area. Ideally, only the semiconductor light emitting element 2 as a light source should be placed. However, thermistors (temperature sensors), Peltier modules, photodiodes (light-receiving elements), Zener diodes (protective elements), lenses that detect the temperature of the semiconductor light-emitting element 2 are included in the sealing region, depending on the usage of the light-emitting device. It is also possible to provide a submount or the like. Thereby, the driving state of the semiconductor light emitting element 2 can be grasped or protected, and the life characteristics of the element can be further improved.

(Through hole)
As described above, the light emitting device 1 has the plurality of through holes 10 on the upper surface 26 of the sealing cap 4. As shown in FIG. 1, these through holes 10 are spaced apart from each other and arranged in a straight line. Further, as shown in FIG. 2, the through hole 10 is a hole that penetrates in the thickness direction of the sealing cap 4 and is closed by the light transmitting body 5. The emitted light from the semiconductor light emitting element 2 placed on the pedestal 3 passes through the through hole 10 and is emitted to the outside of the light emitting device. The shape of the through hole 10 is not particularly limited, such as a substantially inverted truncated cone shape or a cup shape. Further, the opening shape can be various shapes such as a circle, an ellipse, a rectangle, a square, a rhombus, and a polygon. Further, the opening diameter and the opening shape may be constant or may change in the depth direction of the through hole 10. However, it is preferable to use a tapered through-hole 10 having a circular opening shape and an opening diameter increasing toward the outside of the light emitting device. Thereby, the return light to the semiconductor light emitting element 2 side is reduced, and the light extraction efficiency to the outside is increased.

  Further, the opening diameter of the through hole 10 is preferably smaller than the maximum value of the diameter of the light transmitting body 5 in the horizontal direction. Thereby, the light emitted from the semiconductor light emitting element 2 travels to the light transmitting body 5, and the reflected light when reflected by this is reflected again to the upper surface 26 side and taken out to the outside of the light emitting device. be able to. Specifically, by limiting the opening diameter of the through-hole 10 to a range that satisfies the following mathematical formula, the above effect is further obtained, which is preferable.

However, in the above formula, A (mm ² ) is the minimum value of the opening area of the through hole. L (mm) is the distance from the semiconductor light emitting element to the through hole. R (°) is the spread angle of the light emitted from the semiconductor light emitting element 2. The “divergence angle of light emitted from the semiconductor light emitting device” is a full angle at 1 / e ² of the peak intensity.

  Moreover, it is preferable that the radiant flux of the emitted light from the semiconductor light emitting element 2 passes through the opening region of the through hole 10 to the maximum. FIG. 7 is a plan view showing an opening region in the through hole 10 of the light emitting device 1 or 1b. In the example of FIG. 7, the through hole 10 has a perfect circle shape in plan view, and the emitted lights 30 a and 30 b from the two semiconductor light emitting elements 2 pass through the through hole 10.

  It is preferable that the opening diameter and the opening shape of the through hole 10 have a size and a shape that can efficiently include the light distribution regions of the plurality of outgoing lights 30a and 30b. For example, in the case of FIG. 7, in the horizontal direction, with respect to the major axis l, which is the larger value when comparing the added value of the minor axis b of each of the plurality of outgoing lights 30a and 30b with the major axis l, If the diameter including the major axis l is the opening diameter d of the through hole 10, it is preferable that almost all the luminous fluxes of the emitted lights 30 a and 30 b can be guided to the through hole 10. Therefore, the opening diameter and the opening shape of the through hole 10 depend on the light distribution region by the FFP (Far Field Pattern) of the semiconductor light emitting element 2.

  Normally, in the semiconductor light emitting device 2 such as a semiconductor laser device or an edge emitting diode, the angle of the emission intensity distribution of the active layer is widened by a diffraction phenomenon, and the FFP has an elliptical shape as shown in FIG. In Example 1, the semiconductor light emitting element 2 having an aspect ratio in the range of 2.0 to 4.0 between the minor axis b and the major axis l of the FFP was used.

  By limiting the aspect ratio of the FFP to the above range and providing an aperture diameter that can effectively distribute the FFP, the radiant flux of the emitted light in the aperture region can be increased, and thus high-luminance emitted light can be realized. That is, as shown in FIG. 7, the non-passage area of the emitted light in the opening area of the through hole 10 is reduced, and the opening shape and the total irradiation area of the emitted light are made slightly different, so to speak. Emission light emitted from almost the entire region can be obtained. Specifically, the opening diameter and the aspect ratio can be adjusted so that 15 to 100% of the opening area can be occupied by the total irradiation region of the emitted light 30a and 30b on the upper surface 26 where the through hole 10 is formed. preferable. Thereby, the emitted light of a plurality of semiconductor light emitting elements can be efficiently passed through the opening region of one through hole 10, and the emitted light with high luminance can be emitted to the outside of the light emitting device.

(Light transmitting body)
Further, in the sealing cap 4, the through hole 10 provided in the light receiving region for receiving the emitted light from the light source is penetrated in the thickness direction of the sealing cap and the light emitting surface 13 of the semiconductor laser element 2. And are spaced apart. The through hole 10 is closed with the light transmitting body 5. A known method can be adopted as the closing method. For example, the light transmitting body 5 can be fixed to the through-hole 10 with an adhesive such as low melting point glass. Alternatively, the light transmitting body 5 and the sealing cap 4 can be fixed to each other by a chemical reaction between the light transmitting body 5 made of glass and the sealing cap 4 without using an adhesive. As a result, the through region of the through hole 10 is closed. In other words, the light transmitting body 5 is supported by the sealing cap 4. Further, each through hole 10 can be closed with one light transmitting body 5 and a plurality of through holes 10 can be closed with one light transmitting body 5.

  The light transmitting body 5 allows at least a part of the light emitted from the semiconductor light emitting element 2 to be transmitted to the outside of the sealing cap 4, and preferably transmits almost all of the light emitted from the semiconductor light emitting element 2. Shall. Further, the central axis in the diameter of the light transmitting body 5 is substantially equal to the optical axis in the emitted light of the semiconductor light emitting element 2. The diameter of the light transmitting body 5 is not particularly limited as long as the light emitted from the semiconductor laser element 2 can travel almost entirely. In this specification, “almost all” means 80% or more of the light, and within this range, the light extraction efficiency from the light source to the outside of the light emitting device 1 is increased. For example, the light-receiving side shape of the light transmitting body 5 can be substantially the same as the light emission pattern of the semiconductor laser element 2 or a circular shape. This is because the semiconductor laser element 2 that is a light source has a high directivity of emitted light and can easily guide light in one direction. Therefore, the diameter of the light transmitting body 5 is sufficient if it can cover the emitted light from the semiconductor laser element 2, and it is not necessary to make the light incident part larger than necessary. In other words, the shape on the light receiving side of the light transmitting body 5 only needs to have an area of the light shape in consideration of the emission pattern of the semiconductor laser element 2 and the distance between the semiconductor laser element 2 and the light transmitting body 5. .

  As described above, if the shape and area of the light receiving side of the light transmitting body 5 are substantially the same as that of the light emitting surface 13 of the semiconductor laser element 2, almost all of the emitted light with high directivity from the semiconductor laser element 2 can be obtained. In addition to being able to guide the light into the light transmitting body 5, it is possible to prevent the light that has once traveled into the light transmitting body 5 from returning to the semiconductor laser element 2 side as return light.

  Further, the shape of the light transmitting body 5 can be any shape such as a hemispherical shape, a ball shape, a lens shape, a disk shape, or a conical shape. For example, between the two ends, an annular shape having a consistently sized diameter, a reverse tapered shape whose diameter increases in the light traveling direction, or a semi-spherical shape or a plano-convex shape whose diameter enlargement ratio decreases in the light traveling direction It is good. In particular, a structure having a curved surface such as a hemispherical shape or a ball shape is preferable because of high light extraction efficiency. Further, in the light transmitting body 5, taking into account the refractive index difference generated at the interface with air on the light emitting side, the shape on the light emitting side of the light transmitting body 5 is appropriately selected and processed, thereby condensing and diffusing. It is possible to control the wavefront. Furthermore, the light transmission body 5 can also realize the wavefront control of the emitted light, for example, by including a lens such as a spherical lens, an aspherical lens, a cylindrical lens, or an elliptical lens.

The light transmitting body 5 has a function of transmitting at least part of light, and is not limited to a transparent color. The light transmitting body 5 is preferably made of a material having a low absorption rate of light emitted from the semiconductor light emitting element 2. Further, as shown in FIG. 2, a wavelength conversion member 7 can be contained in the light transmitting body 5. In this case, it is more preferable that the light transmitting body 5 has a low absorptance of the wavelength-converted light when the light emitted from the semiconductor light emitting element 2 irradiates the wavelength conversion member 7. Specifically, glass, ceramic (ZrO ₂ , Al ₂ O ₃ , AlN, GaN, etc.), resin (silicone resin, epoxy resin, etc.) and the like can be mentioned.

Moreover, the light transmission body 5 is not limited to a single layer, but can be a multilayer having a function for each layer. For example, a filter for reducing the reflectance at the interface of the light transmitting body 5 may be formed. The filter may be a single layer film or a multilayer film. In the case of using a multilayer film, it is preferable to alternately form a high refractive index material and a low refractive index material. _{Specifically, AlN, SiO 2, TiO 2} , Ta 2 O 5, SiO, Al 2 O 3, Ti 3 O 5, Ti 2 O 3, TiO, Nb 2 O 5, CeO 5, ZnS, MgF 2 , etc. Is mentioned. As a result, the wavelength can be selectively transmitted, the return light to the semiconductor light emitting element 2 side can be reduced, and the deterioration of the characteristics of the semiconductor light emitting element can be prevented.

(Wavelength conversion member)
The wavelength conversion member 7 emits the wavelength-converted light when irradiated with the light emitted from the light emitting semiconductor element 2. That is, it is possible to extract the color mixture light of the light source light of the light emitting semiconductor element 2 and the light converted in wavelength by the wavelength conversion member 7 to the outside. In other words, a desired wavelength can be obtained by selecting the wavelength conversion member 7 as necessary. In addition, a plurality of types of wavelength conversion members 7 may exist.

  For example, by using a phosphor as an example of the wavelength conversion member 7, white light can be obtained as follows. The first method excites a phosphor emitting yellow light with blue light emitted from the semiconductor laser element 2 in the short wavelength side region of visible light. As a result, the yellow light partially converted in wavelength and the blue light that is not converted are mixed, and are emitted as white light by two colors having a complementary color relationship. In the second method, the R • G • B phosphor is excited by light in the short wavelength region from ultraviolet to visible light emitted from the semiconductor laser element 2. The wavelength-converted three-color light is mixed and emitted as white light.

Representative phosphors capable of realizing the above functions include cadmium zinc sulfide attached with copper and YAG phosphors and LAG phosphors attached with cerium. In particular, at the time of high luminance and long-term use _{(Re 1-x Sm x)} 3 (Al 1-y Ga y) 5 O 12: Ce (0 ≦ x <1,0 ≦ y ≦ 1, where, Re Is at least one element selected from the group consisting of Y, Gd, La, and Lu. The YAG, LAG, BAM, BAM: Mn, CCA, SCA, SCESN, SESN, CESN, CASBN and CaAlSiN _3: phosphor containing at least one selected from the group consisting of Eu can be used. By combining the excitation light from the light source and the fluorescent material with good wavelength conversion efficiency in this excitation light, it is possible to obtain a light emitting device with high light emission output, and obtain light of various colors, and color rendering High output light can be obtained.

(Diffusion agent, etc.)
In addition to the wavelength conversion member 7 or alone, an appropriate member such as a viscosity extender, a light diffusing material, a pigment, a fluorescent substance, or the like can be added to the light transmitting body 5 depending on the intended use. Examples of the light diffusing material include barium titanate, titanium oxide, aluminum oxide, silicon oxide, silicon dioxide, heavy calcium carbonate, light calcium carbonate, silver, and a mixture containing at least one of these. Thereby, a light source having a good color distribution can be obtained. Similarly, various colorants can be added as a filter material having a filter effect of cutting unnecessary wavelengths from extraneous light and light emitting elements.

  By using a light diffusing substance and a wavelength converting substance such as a phosphor together, light from the semiconductor laser element 2 and the phosphor is diffusely reflected, and color unevenness that is likely to occur when using a phosphor having a large particle size is suppressed. Can be used preferably. In addition, the half width of the emission spectrum can be narrowed, and a light emitting device with high color purity can be obtained. On the other hand, a light diffusing substance having a wavelength of 1 nm or more and less than 1 μm has a low interference effect on the light wavelength from the semiconductor laser element 2, but has a high transparency and can increase the resin viscosity without reducing the light intensity.

(Reflective member)
In addition, the light emitting device 1 can include a reflecting member. The reflecting member is the primary light that is emitted from the semiconductor light emitting element 2, the secondary light obtained by converting the wavelength of the primary light by the wavelength converting member 7, or the traveling direction of the light diffused by the light diffusing material. It can be effectively guided to the upper surface side of the light emitting device and can be prevented from returning to the semiconductor light emitting element 2 side. This improves the light extraction efficiency, leading to an increase in light output.

The material of the reflecting member is a metal such as Ag, Au, Al, Ni, In, Pd and an alloy such as In—Ag, Au—Ag, AlN, SiO ₂ , TiO ₂ , Ta ₂ O ₅ , SiO, Al ₂ O. ₃ , those containing at least one multilayer film composed of Ti ₃ O ₅ , Ti ₂ O ₃ , TiO, Nb ₂ O ₅ , CeO ₅ , ZnS, MgF _{2 and the} like are preferable. Further, the reflecting member is preferably provided on the entire surface of the base 3 on the mounting surface side of the semiconductor light emitting element 2. In particular, it is preferable that the reflecting member is disposed at a place where the light transmitting body 5 exists.

  In the case of the light emitting device having the above structure, even if the emitted light from one light source is a pattern having a directivity such as an elliptical shape, a collection region of a plurality of FFPs passing through each through hole 10, that is, the light The intensity distribution can be approximated to the opening shape of the through hole 10. As a result, the output light pattern can be non-directional. Furthermore, the light density in the through hole 10 can be increased, and the amount of light flux per unit area in the output light from the through hole 10 can be increased. As a result, it is possible to increase the amount of wavelength conversion per unit area of the phosphor to be irradiated, and thereby high-luminance light can be emitted outside the light emitting device. Further, if the aperture shape and the number of outgoing light beams passing through are substantially the same in each through hole, the color mixing ratio of the primary light from the light source and the secondary light wavelength-converted by the wavelength conversion member 7 is set. Since they can be substantially unified, the light emission characteristics of the light output from each through hole can be made substantially the same.

  That is, as described above, one light emitting device can be used as a unit body, which can be connected vertically and horizontally to form a light emitting device assembly having a desired light emitting region, and further, from all through holes 10 in this assembly. In addition, light having substantially uniform light emission characteristics such as hue and luminance can be emitted. In other words, a dot-shaped light source having a uniform light emission characteristic can be configured in a controlled arrangement direction in a light emission region having an arbitrary shape. Further, the luminance of the total output light emitted from the aggregate can be made substantially constant without depending on the increase or decrease of the light emitting area.

  On the other hand, it is also possible to emit light having different emission characteristics from each through hole 10. Specifically, in each through hole 10, various emission lights can be easily emitted by individually controlling the number of light sources that pass through, the opening area, and the light transmitting body. Embodiments according to the light emitting device of the present invention will be described below with reference to the drawings. However, the same number is attached | subjected in the structure substantially the same as embodiment, and detailed description is abbreviate | omitted suitably.

  FIG. 8 is a cross-sectional view of the light emitting device 1c according to the first embodiment. In the light emitting device 1c, the lead 8 is fixed to the pedestal 3 with low melting point glass, and the lead 8 is electrically connected to the external electrode. Moreover, the base 3 of Example 1 is comprised from SPC and Cu. A plurality of semiconductor light emitting elements 2 are placed in an airtightly sealed state on the pedestal 3, which is an internal region constituted by the pedestal 3 and the sealing cap 4. Are emitted so as to pass through one through hole 10. In addition, the semiconductor light emitting element 2 is fixed to one side surface of the stem column 9 via an adhesive such as Au—Sn. In Example 1, the peak wavelength is 445 nm and the FFP aspect ratio is 1: 2. 7 was used. The semiconductor laser 2 and the lead 8 are electrically connected via a wire, whereby electric power is supplied to the semiconductor laser 2.

  A plurality of through holes 10 are provided on the upper surface 26 that is one surface of the sealing cap 4. As shown in FIG. 8, the through-hole 10 has an opening diameter that is substantially constant in the depth direction. Specifically, the through hole 10 is constituted by a columnar peripheral wall, and a disk-shaped light transmitting body 5 seals the upper portion of the through hole 10. In each through hole 10, about 15 to 100% of the opening area is occupied by the FFP of the semiconductor light emitting element 2. Moreover, each through-hole 10 of Example 1 is obstruct | occluded separately by each light-transmitting body 5. FIG. Further, the light transmitting body 5 includes YAG and LAG which are wavelength conversion members 7. The light emitted from the semiconductor light emitting element 2 passes through the through hole 10, enters the light transmitting body 5, and is further wavelength-converted by the wavelength conversion member 7 in the light transmitting body 5. Due to the color mixture of the blue light of the semiconductor light emitting element 2 and the yellow light and green light obtained by the wavelength conversion member 7, white light with extremely high luminance and excellent color rendering was obtained.

  Further, in Example 1, an example in which the opening diameter of the through hole 10 varies, specifically, an example in which the through hole 10 is increased in accordance with the light traveling direction is given as a light emitting device 1d of Example 2. The cross-sectional view shown in FIG. 9 is the light emitting device 1d according to the second embodiment, and the through hole 10 has a reverse tapered shape. Each through hole 10 is individually closed by the light transmitting body 5 as in the first embodiment. The light transmitting body 5 according to the second embodiment has a shape that can be fitted to the opening peripheral wall of the through hole 10, that is, has an inverted truncated cone shape. Thus, if the diameter of the through hole 10 and / or the light receiving side and the light emitting side of the light transmitting body 5 is changed, specifically, the diameter of the light emitting side is made larger than that of the light receiving side, It is possible to prevent light traveling in the through hole 10 and / or the light transmitting body 5 from returning to the semiconductor laser element 2 side due to reflection on the wall of the through hole 10 or the like. That is, since the light can be guided efficiently to the outside of the light emitting device, the light collection rate in the light emitting device is increased.

  Further, the shape of the light transmitting body 5 that closes the reverse tapered through hole 10 is not particularly limited as long as the through hole 10 can be substantially sealed. For example, as shown in FIG. It can also be a disk shape. If it is a disk shape, manufacture of components can be facilitated, and the yield can be improved by suppressing the occurrence of defective products.

  FIG. 10 shows a cross-sectional view of the light emitting device 1e according to the third embodiment. The light emitting device 1e of FIG. 10 is characterized in that a plurality of through holes 10 are closed with a single light transmitting body 5. Thereby, in addition to reducing the number of parts and reducing the cost, in each through-hole 10, the amount of light that is wavelength-converted by the wavelength conversion member 7 contained in the light transmitting body 5 can be more uniformly controlled. A light emitting device with less alignment color unevenness can be obtained.

  Furthermore, a light-emitting device 1f having a plurality of sealing caps can be provided, which is described in Example 4. FIG. 11 is a cross-sectional view of the light emitting device 1 according to the fourth embodiment. The light emitting device 1f further includes an outer cap 6 outside the sealing cap 4, that is, a double cap structure. Thereby, the airtight state in the sealing region can be further stabilized. In addition, by providing the outer cap with a protective function that promotes light diffusion such as diffuse reflection, it is possible to prevent high-energy emitted light from directly traveling to the eyes and causing harmful effects, and a highly safe light-emitting device And can.

  The shape of the outer cap 6 is not particularly limited as long as it is connected to the base 3 and can cover the outer side of the sealing cap 4. Further, the material of the outer cap 6 may be the same as that of the sealing cap 4, and in particular, it is preferable that the thermal expansion coefficient is substantially equal to that of the abutting member. Thus, a light-emitting device with high heat resistance can be obtained. The outer cap 6 of Example 4 has a cylindrical shape similar to that of the sealing cap 4 and is made of Kovar as a material. The diameter and height of the outer cap 6 are larger than the diameter and height of the sealing cap 4, and an opening is formed inside the substantially cylindrical cap 6. Further, the outer cap 6 is connected upward from the peripheral edge of the base 3 and surrounds the outer periphery of the sealing cap 4.

  For the connection of the outer cap 6 and the pedestal 3, for example, known means can be adopted in addition to resistance welding. In addition, as shown in FIG. 11, the outer cap 6 and the base 3 may be connected via a welding member 70. The welding member 70 can use either member with high or low heat conductivity. For example, if the member has low heat conductivity, the welding member 70 generates heat from a plurality of heat sources in the apparatus and emitted light that has passed through the through hole 10. Heat can be dissipated in a separate path. On the other hand, if it is a member with high heat conductivity, since the heat dissipation path from the main heat generation source can be expanded, heat storage in the light emitting device can be suppressed.

  In addition, the light emitting device 1 f has a structure in which the transmitted light can be guided to the outside of the light emitting device 1 f in the outer cap 6 at least in a region that receives the transmitted light via the light transmitting body 5. For example, a through hole similar to the sealing cap 4 can be provided in the outer cap 6. Specifically, in the thickness direction of the outer cap 6, a through-hole penetrating inside and outside is provided, and a transmissive member that closes the through-hole is in close contact, and light can be emitted to the outside through the transmissive member. . Alternatively, the outer cap 6 itself may be made of a permeable material.

  The shape of each member can be changed in various ways. As an example, FIG. 12 is a perspective view of a light emitting device 1g according to Example 5, and FIG. 13 is a cross-sectional view taken along line XIII-XIII 'of FIG. The light emitting device 1g is different from the other embodiments in that the shape and configuration position of the members are different, and the substantial functions of the respective members are the same. In the example of the light emitting device 1g shown in FIGS. 12 and 13, the through hole 10b has a rectangular parallelepiped shape that is thin in the height direction (vertical direction in FIGS. 12 and 13) and that is orthogonal to the height direction (horizontal direction). Are in parallel.

  Specifically, in the light emitting device 1g, a plurality of semiconductor light emitting elements 2 are placed on a flat pedestal 3b via an adhesive such as Au-Sn. The semiconductor light emitting element 2 is sealed in an airtight state with a pedestal 3b and a rectangular parallelepiped sealing cap 4b erected from the periphery of the pedestal 3b. However, in the member constituting the light emitting device 1g, the base 3 or the sealing member can be used as long as the semiconductor light emitting element 2 can be fixed or the region formed inside can be maintained in an airtight body regardless of the name. It can be employed as an alternative member having the function of the cap 4.

  In addition, as shown in FIG. 13, the light emitting device 1g has the emission direction of the semiconductor light emitting element 2 as the side direction (the direction of the arrow), and a plurality of side surfaces 29b of the sealing cap 4b located on the emission direction side are provided on the side surface 29b. Through-hole 10b is formed. The through hole 10b is closed by a light transmitting body 5 that can transmit light emitted from the light source, and a plurality of output lights are effectively passed through the one through hole 10b as in the other embodiments. . Furthermore, the plurality of through-holes 10b are formed in parallel with the rectangular longitudinal direction (the left-right direction in FIG. 12) constituting the side surface 29b. In other words, the arrangement direction of the through holes 10 b can be recognized by the shape of the side surface 29 b, that is, the side surface 29 b or a part of the side surface 29 b can be used as the positioning guide 28. However, since the light emitting device 1g is composed of a rectangular parallelepiped member, there are many portions parallel to the longitudinal direction of the side surface 29. Therefore, these can be used as the positioning guides 28.

  Moreover, if it is the shape of the light-emitting device 1g shown in FIG.12 and FIG.13, it will be easy to arrange the several light-emitting device 1g in parallel on the basis of the positioning guide 28. FIG. That is, the shape of the combined side surface 29b can be made arbitrary by laminating the flat light emitting devices 1g upward and / or juxtaposing them in the lateral direction. At the same time, the arrangement direction of the through holes 10b is substantially unified, and output light with uniform light emission characteristics can be obtained from each through hole.

  The semiconductor light-emitting device of the present invention can be suitably used for an in-vehicle headlight, a light source for a projector, illumination, and the like.

1 is a perspective view showing a light emitting device according to Embodiment 1. FIG. It is sectional drawing in the II-II 'line | wire of FIG. It is a top view of a several light-emitting device, (a) is a top view at the time of arranging the light-emitting device which has a positioning guide, and the light-emitting device which does not have a positioning guide in 1 direction, respectively. 6 is an explanatory diagram illustrating an example of an arrangement of light emitting devices according to Embodiment 2. FIG. 6 is a plan view of a light emitting device according to Embodiment 3. FIG. 6 is a plan view of a light emitting device according to Embodiment 4. FIG. It is a top view which shows the opening area | region of the through-hole which concerns on embodiment. 1 is a cross-sectional view of a light emitting device according to Example 1. FIG. 6 is a cross-sectional view of a light emitting device according to Example 2. FIG. 6 is a cross-sectional view of a light emitting device according to Example 3. FIG. 6 is a cross-sectional view of a light emitting device according to Example 4. FIG. 6 is a perspective view of a light emitting device according to Example 5. FIG. It is sectional drawing in the XIII-XIII 'line | wire of FIG. It is a top view which shows the conventional light source device for illumination. It is a side view which shows another conventional light source device for illumination, (a) shows a light bulb type, (b) shows a plan view of (a), and (c) shows a fluorescent lamp type.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1b, 1c, 1d, 1e, 1f, 1g, 1h, 1i ... Light-emitting device 500 ... Light-emitting device 2 ... Semiconductor light-emitting device (semiconductor laser device)
3, 3b ... Base 4, 4b ... Sealing cap 5 ... Light transmitting body 6 ... Outer cap 7 ... Wavelength converting member 8 ... Lead 9 ... Stem column 10, 10b ... Through hole 13 ... Light exit surface 24 ... Plane (guide) surface)
26: One surface of the sealing cap (upper surface of the sealing cap)
27 ... Connection 28, 28a, 28b ... Positioning guide 29, 29b ... Side face 30a, 30b ... Outgoing light 31a ... Notch (positioning guide)
31b ... Notch (reference position guide)
DESCRIPTION OF SYMBOLS 70 ... Welding member 100, 200, 300 ... Illumination light source device 101 ... Semiconductor laser element 102 ... Heat sink 103 ... Diffuse lens 104 ... Phosphor 105 ... Vacuum glass tube 210 ... Socket part b ... Short diameter l ... Long diameter d ... Open Caliber

Claims (13)

A plurality of semiconductor light emitting elements;
A pedestal capable of fixing the semiconductor light emitting element;
A sealing cap capable of sealing the semiconductor light emitting element in an internal region formed by connection with the pedestal;
A light emitting device comprising:
A plurality of through holes are formed on one surface of the sealing cap,
The emitted light from the semiconductor light emitting element can pass through the through hole,
The light emitting device further comprises a positioning guide capable of recognizing an arrangement direction of the plurality of through holes. The light-emitting device according to claim 1.
The plurality of through holes are arranged in a straight line,
The light-emitting device, wherein the positioning guide is provided so as to be substantially parallel to an arrangement direction of the through holes. The light-emitting device according to claim 1 or 2,
As the positioning guide, a guide surface orthogonal to one surface where the through hole is formed is formed on a side surface of the sealing cap. The light emitting device according to any one of claims 1 to 3,
The light emitting device, wherein the positioning guide is provided on the pedestal. The light-emitting device according to any one of claims 1 to 4,
A light-emitting device, wherein light emitted from two or more semiconductor light-emitting elements passes through the one through-hole. The light emitting device according to any one of claims 1 to 5,
15 to 100% of the opening area of the through hole is occupied by the FFP of the semiconductor light emitting element. The light emitting device according to any one of claims 1 to 6,
It has a light transmitting body that closes the through hole,
A light emitting device, wherein the light transmitting body contains a wavelength conversion member. The light-emitting device according to claim 7.
One light transmission body is each arrange | positioned at each through-hole, The light-emitting device characterized by the above-mentioned. The light emitting device according to any one of claims 1 to 8,
An opening diameter of the through hole is increased according to a traveling direction of light. The light emitting device according to any one of claims 1 to 9,
The minimum value of the opening area of the through hole is in a range satisfying the following mathematical formula.

A is the minimum value of the opening area of the through hole. L is the distance between the semiconductor light emitting element and the through hole. R is the spread angle of the light emitted from the semiconductor light emitting element 2. The “divergence angle of light emitted from the semiconductor light emitting device” is a full angle at 1 / e ² of the peak intensity. The light emitting device according to any one of claims 1 to 10,
The semiconductor light-emitting device is a semiconductor laser device or an edge-emitting LED having an emission peak wavelength in a range of 350 nm to 470 nm. The light emitting device according to any one of claims 1 to 11,
The light-transmitting device further includes a filler. The light emitting device according to any one of claims 1 to 12,
A light emitting device comprising an outer cap connected to the pedestal and further covering an outer side of the sealing cap.

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