JP2009087907A - Organic semiconductor light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface light-emitting type organic semiconductor light-emitting device which is integrated by an organic thin film transistor of low voltage driving and a high driving current, and holds flatness, and in which light-emitting characteristics and an yield are improved. <P>SOLUTION: This device is equipped with a gate electrode 120 arranged on a substrate 10, a gate insulating film 15 arranged on the gate electrode, a source electrode 16 and a drain electrode 18 arranged on the gate insulating film, an organic semiconductor layer 400 arranged on the gate insulating film between the source electrode and the drain electrode, an organic thin film transistor composed of a laminated structure of a positive hole transport layer, a light-emitting layer, and an electron transport layer repeatedly arranged in a plurality of layers on the organic semiconductor layer 400, an anode electrode 30 arranged on the substrate 10 at the peripheral part of the organic thin film transistor, and an organic semiconductor light-emitting element composed of the laminated structure of the positive hole transport layer, the light-emitting layer, and the electron transport layer repeatedly arranged in the plurality of layers on the anode electrode. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an organic semiconductor light emitting device, and more particularly to an organic semiconductor light emitting device in which an organic thin film transistor and a surface emitting organic semiconductor light emitting element are integrated on the same substrate.

  In circuit elements using organic semiconductors, a highly reliable circuit element that maintains the characteristics of organic semiconductors stably for a long period of time and has high durability against various external stresses and shocks is disclosed. (For example, refer to Patent Document 1). The circuit element according to Patent Document 1 is a circuit element formed by forming a circuit part including an organic semiconductor on a substrate, and has a sealing can surrounding the circuit part with a predetermined space.

  A field effect transistor having a structure capable of suppressing a change or deterioration in characteristics due to the presence of water vapor in the atmosphere is disclosed (see, for example, Patent Document 2). The field effect transistor disclosed in Patent Document 2 includes a gate electrode formed on a substrate, a gate insulating film formed on the gate electrode, a source / drain electrode formed on the gate insulating film, and And a channel forming region made of an organic semiconductor material layer formed between the source / drain electrodes and on the gate insulating film. A protective layer is formed at least on the channel formation region, and this protective layer has a laminated structure of at least a layer having hygroscopicity and a layer having moisture resistance.

On the other hand, a tantalum oxide film (tantalum oxide: Ta ₂ O ₅ ) film has a high dielectric constant (bulk dielectric constant is 25) and has a gate driving voltage when used as a gate insulating film of a transistor. Although it can be greatly reduced, it cannot be used as a stable gate insulating film due to the hysteresis characteristics derived from internal defects and bonding properties of the Ta ₂ O ₅ film itself, and the transistor has high performance. Is difficult. In addition, when a tantalum oxide film is used as a gate insulating film of an organic thin film transistor, the surface modification is very difficult, the orientation control of the organic semiconductor material is not good, and the characteristics of the organic thin film transistor are improved (low voltage driving, high Driving current) is difficult to achieve.

  In addition, when a gold (Au) electrode is used as a source / drain electrode of an organic thin film transistor, hole injection into an organic semiconductor layer is easy due to its relatively large work function, but an organic semiconductor having a large work function. The hole injection amount is not always sufficient for the layer. In particular, in a bottom contact type organic thin film transistor, the contact resistance of the organic semiconductor layer / inorganic electrode interface is large.

  On the other hand, a surface-emitting organic thin film transistor includes an organic semiconductor light emitting device such as an organic light emitting diode (OLED) or organic electroluminescence (OEL) and an organic thin film transistor (OTFT) that is a switching device. Transistors) can be formed in a lump (continuous film formation), and a high-definition display device with a high aperture ratio can be formed.

By improving the mobility of the OTFT, the on-resistance of the OTFT is reduced, the on-current is increased, and the current drive capability is increased, and in combination with the organic semiconductor light-emitting element, high-luminance light emission becomes possible.
JP 2005-277065 A JP 2005-191077 A

  However, increasing the mobility of organic thin film transistors generally causes crystallization or grain size growth of the organic thin film transistor layer. As a contradiction, the flatness of the organic light emitting diode layer is impaired, and the emission characteristics and yield are reduced. There was a problem that occurred.

  An object of the present invention is to provide an organic semiconductor light-emitting device in which an organic thin-film transistor and a surface-emitting organic semiconductor light-emitting element are integrated on the same substrate. Used as a gate insulating film for organic thin film transistors, easy surface modification, good orientation control of organic semiconductor materials, improved characteristics of organic thin film transistors (low voltage drive, high drive current), An object of the present invention is to provide an organic semiconductor light emitting device suitable for integration in which the flatness of a light emitting organic semiconductor light emitting element is maintained and the light emission characteristics and the yield are improved.

  Therefore, the flatness of the laminated structure constituting the entire organic semiconductor light emitting device is secured by multilayering the surface emitting organic semiconductor light emitting element layer or the light emitting layer laminated on the organic thin film transistor layer.

  According to one embodiment of the present invention for achieving the above object, a substrate, a gate electrode disposed on the substrate, a gate insulating film disposed on the gate electrode, and disposed on the gate insulating film A source electrode and a drain electrode, an organic semiconductor layer disposed on the gate insulating film between the source electrode and the drain electrode, and a first hole transport layer disposed on the organic semiconductor layer, A first light-emitting layer disposed on the first hole-transport layer, a first electron-transport layer disposed on the first light-emitting layer, and a second positive layer disposed on the first electron-transport layer. A hole transport layer; a second light emitting layer disposed on the second hole transport layer; a second electron transport layer disposed on the second light emitting layer; and a second electron transport layer disposed on the second electron transport layer. Organic thin film transistor comprising a conductive layer and the organic thin film transistor In the peripheral portion, an anode electrode disposed on the substrate, a fourth hole transport layer disposed on the anode electrode, a fourth light emitting layer disposed on the fourth hole transport layer, A fourth electron transport layer disposed on the fourth light emitting layer; a fifth hole transport layer disposed on the fourth electron transport layer; and a fifth light emitting disposed on the fifth hole transport layer. An organic semiconductor light emitting device, further comprising: a layer, a fifth electron transport layer disposed on the fifth light emitting layer, and an organic semiconductor light emitting element having a stacked structure of a cathode electrode disposed on the fifth electron transport layer An apparatus is provided.

  According to another aspect of the present invention, a substrate, a gate electrode disposed on the substrate, a gate insulating film disposed on the gate electrode, and a first metal layer disposed on the gate insulating film. A source electrode and a drain electrode having a laminated structure of a second metal layer disposed on the first metal layer, and an organic semiconductor disposed on the gate insulating film between the source electrode and the drain electrode A first hole transporting layer disposed on the organic semiconductor layer, a first light emitting layer disposed on the first hole transporting layer, and a first light disposed on the first light emitting layer. An electron transport layer; a second hole transport layer disposed on the first electron transport layer; a second light emitting layer disposed on the second hole transport layer; and disposed on the second light emitting layer. A second electron transport layer, and a conductor layer disposed on the second electron transport layer, The work function of the first metal layer is larger than the work function of the second metal layer, an anode electrode disposed on the substrate in the periphery of the organic thin film transistor, and the work function of the first metal layer. A fourth hole transporting layer, a fourth light emitting layer disposed on the fourth hole transporting layer, a fourth electron transporting layer disposed on the fourth light emitting layer, and the fourth electron transporting layer. A fifth hole transport layer disposed on the fifth light-emitting layer disposed on the fifth hole transport layer; a fifth electron transport layer disposed on the fifth light-emitting layer; An organic semiconductor light-emitting device further comprising an organic semiconductor light-emitting element having a stacked structure with a cathode electrode disposed on a 5-electron transport layer is provided.

  According to another aspect of the present invention, the substrate, the gate electrode disposed on the substrate, the first gate insulating film disposed on the gate electrode, and the first gate insulating film are disposed. A source electrode and a drain electrode having a stacked structure of a second gate insulating film, a first metal layer disposed on the second gate insulating film, and a second metal layer disposed on the first metal layer; An organic semiconductor layer disposed on the gate insulating film between the source electrode and the drain electrode, a first hole transport layer disposed on the organic semiconductor layer, and on the first hole transport layer A first light-emitting layer disposed on the first light-emitting layer, a second electron transport layer disposed on the first light-emitting layer, a second hole transport layer disposed on the first electron-transport layer, and the second positive transport layer. A second light emitting layer disposed on the hole transport layer; and a second light emitting layer disposed on the second light emitting layer. An organic thin film transistor including a transport layer and a conductor layer disposed on the second electron transport layer, wherein a work function of the first metal layer is larger than a work function of the second metal layer; In the peripheral portion, an anode electrode disposed on the substrate, a fourth hole transport layer disposed on the anode electrode, a fourth light emitting layer disposed on the fourth hole transport layer, A fourth electron transport layer disposed on the fourth light emitting layer; a fifth hole transport layer disposed on the fourth electron transport layer; and a fifth light emitting disposed on the fifth hole transport layer. An organic semiconductor light emitting device, further comprising: a layer, a fifth electron transport layer disposed on the fifth light emitting layer, and an organic semiconductor light emitting element having a stacked structure of a cathode electrode disposed on the fifth electron transport layer An apparatus is provided.

  According to another aspect of the present invention, the substrate, the gate electrode disposed on the substrate, the first gate insulating film disposed on the gate electrode, and the first gate insulating film are disposed. A second gate insulating film; a first metal layer disposed on the second gate insulating film; a second metal layer disposed on the first metal layer; and a second metal layer disposed on the second metal layer. A source electrode and a drain electrode having a laminated structure with a third metal layer; an organic semiconductor layer disposed on the second gate insulating film between the source electrode and the drain electrode; and disposed on the organic semiconductor layer The first hole transport layer, the first light emitting layer disposed on the first hole transport layer, the first electron transport layer disposed on the first light emitting layer, and the first electron transport. A second hole transport layer disposed on the layer, and a second hole transport layer disposed on the second hole transport layer. A light-emitting layer; a second electron-transport layer disposed on the second light-emitting layer; and a conductor layer disposed on the second electron-transport layer. The first metal layer and the third metal layer The organic thin film transistor whose work function is larger than the work function of the second metal layer, the anode electrode disposed on the substrate in the periphery of the organic thin film transistor, and the fourth hole disposed on the anode electrode A transport layer; a fourth light emitting layer disposed on the fourth hole transport layer; a fourth electron transport layer disposed on the fourth light emitting layer; and a fourth electron transport layer disposed on the fourth electron transport layer. A fifth hole transporting layer; a fifth light emitting layer disposed on the fifth hole transporting layer; a fifth electron transporting layer disposed on the fifth light emitting layer; and the fifth electron transporting layer. And an organic semiconductor light emitting device having a laminated structure with a cathode electrode disposed on the substrate. The organic semiconductor light-emitting device is provided with.

  According to another aspect of the present invention, the substrate, the gate electrode disposed on the substrate, the first gate insulating film disposed on the gate electrode, and the first gate insulating film are disposed. A second gate insulating film; an organic semiconductor layer disposed on the second gate insulating film; a first metal layer disposed separately on the organic semiconductor layer; and disposed on the first metal layer. A source electrode and a drain electrode having a stacked structure of a second metal layer and a third metal layer disposed on the second metal layer; and disposed on the organic semiconductor layer and the source electrode and drain electrode. The first hole transport layer, the first light emitting layer disposed on the first hole transport layer, the first electron transport layer disposed on the first light emitting layer, and the first electron transport layer A second hole transport layer disposed thereon, and disposed on the second hole transport layer. A second light-emitting layer; a second electron-transport layer disposed on the second light-emitting layer; and a conductor layer disposed on the second electron-transport layer. The first metal layer and the third metal layer An organic thin film transistor having a work function of the metal layer larger than that of the second metal layer, an anode electrode disposed on the substrate in a peripheral portion of the organic thin film transistor, and a fourth disposed on the anode electrode A hole transport layer, a fourth light-emitting layer disposed on the fourth hole transport layer, a fourth electron transport layer disposed on the fourth light-emitting layer, and disposed on the fourth electron transport layer The fifth hole transport layer, the fifth light emitting layer disposed on the fifth hole transport layer, the fifth electron transport layer disposed on the fifth light emitting layer, and the fifth electron transport. An organic semiconductor light emitting device having a laminated structure with a cathode electrode disposed on the layer; The organic semiconductor light-emitting device is provided comprising the al.

  According to another aspect of the present invention, there is provided an organic semiconductor light emitting device that is a bottom emission type, a top emission type, or a boss emission type.

According to another aspect of the present invention, the surface of the silicon oxide film is surface modified by Ar reverse sputtering, UV / O ₃ treatment, Ar / O ₂ plasma treatment, HMDS treatment, or a combination thereof. An organic semiconductor light emitting device is provided.

  According to another aspect of the present invention, there is provided an organic semiconductor light emitting device that is applied to any one or combination of an organic light emitting device, a flat panel display, flexible electronics, transparent electronics, and a lighting device.

  According to the present invention, in an organic semiconductor light emitting device in which an organic thin film transistor and a surface emitting organic semiconductor light emitting element are integrated on the same substrate, an insulating film having a high hole injecting ability from a source / drain electrode and a high dielectric constant is provided. Used as a gate insulating film for organic thin film transistors, easy surface modification, good orientation control of organic semiconductor materials, improved characteristics of organic thin film transistors (low voltage drive, high drive current), It is possible to provide an organic semiconductor light emitting device suitable for integration in which the flatness of the light emitting organic semiconductor light emitting element is maintained and the light emission characteristics and the yield are improved.

  According to the organic semiconductor light emitting device of the present invention, the light emission characteristics such as luminance unevenness / color unevenness due to the luminance variation and emission wavelength variation of the surface emitting organic semiconductor light emitting element are improved, and the decrease in yield is also suppressed. In addition, since the surface-emitting organic semiconductor light-emitting element and the organic thin-film transistor are multi-layered, the light emission efficiency can be significantly increased.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic and different from the actual ones. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Further, the embodiment described below exemplifies an apparatus and a method for embodying the technical idea of the present invention. The technical idea of the present invention is the arrangement of each component as described below. It is not something specific. The technical idea of the present invention can be variously modified within the scope of the claims.

[First embodiment]
FIG. 1 is a schematic cross-sectional structure diagram showing an organic semiconductor light emitting device according to a first embodiment of the present invention, in which organic semiconductor light emitting elements are integrated in a peripheral portion of a bottom contact type organic thin film transistor.

  Since the organic thin film transistor is configured as a transistor for a driver of an organic semiconductor light emitting element, it is necessary to increase the on-current of the organic thin film transistor for low voltage driving and high luminance light emission. The organic semiconductor light emitting device according to the first embodiment of the present invention realizes a high driving current by applying the structure of the organic thin film transistor shown in FIG.

  As shown in FIG. 1, the structure of the organic semiconductor light emitting device according to the first embodiment of the present invention includes a substrate 10, a gate electrode 120 disposed on the substrate 10, and a gate disposed on the gate electrode 120. The insulating film 15, the source electrode 16 and the drain electrode 18 that are spaced apart on the gate insulating film 15, and the organic semiconductor layer 400 that is disposed on the gate insulating film 15 between the source electrode 16 and the drain electrode 18. A hole transport layer 411 disposed on the organic semiconductor layer 400, a light-emitting layer 412 disposed on the hole transport layer 411, an electron transport layer 413 disposed on the light-emitting layer 412, and an electron transport layer A hole transport layer 421 disposed on the electron transport layer 413, a light emitting layer 4422 disposed on the hole transport layer 421, an electron transport layer 423 disposed on the light emitting layer 422, and an electron transport layer 423. A hole transport layer 431, a light emitting layer 432 disposed on the hole transport layer 431, an electron transport layer 433 disposed on the light emitting layer 432, and a conductor layer 60 disposed on the electron transport layer 433. An organic thin film transistor is provided.

  In addition, in the periphery of the organic thin film transistor, an anode electrode 30 disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a light emitting layer 312 disposed on the hole transport layer 311, The electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, the light emitting layer 322 disposed on the hole transport layer 321, and the light emitting layer 322 , The electron transport layer 323 disposed on the electron transport layer 323, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the electron disposed on the light emitting layer 332 An organic semiconductor light emitting device having a stacked structure of a transport layer 333 and a cathode electrode 40 disposed on the electron transport layer 333 is provided.

  A color filter 50 may be disposed on the back surface of the substrate 10 on which the organic semiconductor light emitting element is mounted.

  The metal layers 16 and 18 are formed of gold (Au) electrodes, and the film thickness thereof is, for example, about 20 nm to 200 nm, and preferably about 80 nm.

  The gate insulating film 15 may be made of a tantalum oxide film.

Furthermore, specifically, the structure of the organic semiconductor light emitting device according to the first embodiment of the present invention is, as shown in FIG. 1, a substrate 10 and an Al— having a thickness of about 100 nm, disposed on the substrate 10. A gate electrode 120 made of an Nd layer, a gate insulating film 15 made of a tantalum oxide film (PVD-Ta ₂ O ₅ ) having a thickness of about 100 nm disposed on the gate electrode 120, and spaced apart on the gate insulating film 15 The source electrode 16 and the drain electrode 18 which are disposed and are formed of a gold electrode layer having a thickness of about 80 nm, and are disposed between the source electrode 16 and the drain electrode 18 and on the gate insulating film 15. For example, Py105 (Me) described later A p-type organic semiconductor layer 400 having a thickness of about 50 nm, a hole transport layer 411 disposed on the organic semiconductor layer 400, a light emitting layer 412 disposed on the hole transport layer 411, and the light emitting layer 4 12, an electron transport layer 413 disposed on the electron transport layer, a hole transport layer 421 disposed on the electron transport layer 413, a light emitting layer 422 disposed on the hole transport layer 421, and a light emitting layer 422. The electron transport layer 423, the hole transport layer 431 disposed on the electron transport layer 423, the light emitting layer 432 disposed on the hole transport layer 431, and the electron transport layer 433 disposed on the light emitting layer 432 And an organic thin film transistor including the conductor layer 60 disposed on the electron transport layer 433.

  Further, in the peripheral portion of the organic thin film transistor, it is disposed on the substrate 10, for example, an anode electrode 30 made of ITO, a hole transport layer 311 disposed on the anode electrode 30, and a hole transport layer 311. The light emitting layer 312, the electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, and the light emitting layer 322 disposed on the hole transport layer 321 The electron transport layer 323 disposed on the light emitting layer 322, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the light emitting layer 332 And an organic semiconductor light emitting device having a stacked structure of, for example, a cathode electrode 40 formed of an Al / LiF stacked electrode.

  In addition, the hole transport layers 311 and 411 may be formed at the same time, the hole transport layers 321 and 421 may be formed at the same time, and the hole transport layers 331 and 431 may be formed at the same time. .

  In the organic semiconductor light emitting element laminated structure, an organic semiconductor layer may be interposed between the anode electrode 30 and the hole transport layer 311 in the same manner as the organic semiconductor layer 400 in the organic thin film transistor laminated structure.

  Further, the electron transport layers 313 and 413 may be formed at the same time, the electron transport layers 323 and 423 may be formed at the same time, and the electron transport layers 333 and 433 may be formed at the same time.

  In addition, the light emitting layers 312 and 412 may be formed at the same time, the light emitting layers 322 and 422 may be formed at the same time, and the light emitting layers 332 and 432 may be formed at the same time.

Also in the formation process of the organic semiconductor light emitting device according to the first embodiment of the present invention, as a pretreatment for forming the organic semiconductor layer 400, the gate insulating film 15 made of a tantalum oxide film (PVD-Ta ₂ O ₅ ). The following processing is performed on the surface of the surface for surface cleaning. That is, reverse sputtering of Ar is carried out for about 60 seconds, then UV / O ₃ treatment is carried out for about 2 minutes, and further HMDS treatment is carried out for about 15 minutes in order to make it hydrophobic in a gas phase atmosphere. Further, Ar / O ₂ plasma treatment may be performed.

  Further, since the gold (Au) layer forming the source electrode 16 and the drain electrode 18 has a relatively large work function, hole injection into the organic semiconductor layer 400 is easy.

  Although the final structure is not shown in FIG. 1, a nitride film or silicon oxide film formed by low-temperature growth or a laminate thereof is formed on the conductor layer 60 and the cathode electrode 40. The structure may be formed as a passivation film. Alternatively, a laminated film of an inorganic film and an organic film may be formed as a passivation film. Furthermore, you may provide the package structure by the sealing can which has predetermined space.

Further, in the organic semiconductor light emitting device according to the first embodiment of the present invention, the absolute value of the HOMO (Highest Occupied Molecular Orbital) energy level of the p-type organic semiconductor layer 400 in the organic thin film transistor portion is a conductive material for capping. The absolute value of the work function of the body layer 60 is preferably larger. Here, the energy level of HOMO represents the ground state of an organic molecule. The energy level of LUMO (Lowest Unoccupied Molecular Orbital) represents an excited state of an organic molecule. Here, the LUMO level corresponds to the lowest excited singlet level (S ₁ ). Furthermore, when electrons and holes are injected into an organic substance to form radical anions (M ⁻ ) and radical cations (M ⁺ ), the levels of holes and electrons are HOMO levels because there is no exciton binding energy. The electron conduction level and the hole conduction level are located outside the level and the LUMO level.

  When an n-type organic semiconductor layer is applied instead of the p-type organic semiconductor layer 400, the absolute value of the LUMO energy level of the n-type organic semiconductor layer is made smaller than the absolute value of the work function of the conductor layer. good.

  As the hole transport layers 411, 421, and 431, for example, α-NPD can be used. Here, α-NPD is 4,4-bisN- (1-naphthyl-1-) [N-phenyl-amino] -biphenyl (4,4-bis [N- (1-naphtyl-1-) N]. -phenyl-amino] -biphenyl).

The electron transport layers 412, 422, and 432 can be formed of, for example, Alq ₃ . Here, Alq ₃ is a material called aluminum 8-hydroxyquinolinate or tri-8-quinolinolato aluminum.

  The conductor layer 60 includes, for example, a metal material such as MgAg, Al, Ca, Li, Cs, Ni, and Ti, a metal laminated structure made of LiF / Al, an inorganic conductor material such as ITO and IZO, and an organic conductor such as PEDOT. It can be made of body material.

  That is, a pn formed by a stacked structure of hole transport layers 411, 421, 431, light emitting layers 412, 422, 432 and electron transport layers 413, 423, 433 between the p-type organic semiconductor layer 400 and the conductor layer 60. A short circuit between the source electrode 16 and the drain electrode 18 can be prevented by the diode. That is, the pn diode can prevent the backflow of carriers, and a short circuit between the source and the drain via the conductor layer 60 does not occur in principle.

  As a p-type transistor, when a bias voltage is applied between the source and the drain, the direction of the electric field between the conductor layer 60 and the drain electrode 18 is a reverse bias of a pn junction. There is no short circuit between 16 and the drain electrode 18.

  Similarly, when a bias voltage is applied between the source and the drain, the forward conductive bias of the pn junction is applied between the capping conductor layer 60 and the source electrode 16, so that the capping conductor layer 60 is the source electrode (reference). It stabilizes with a potential difference corresponding to the forward voltage drop (Vf) of the pn junction. The potential inside the p-type organic semiconductor layer (transistor active layer) 400 is stabilized by the electromagnetic shielding effect of the cap conductor layer 60.

  In the structure of the organic semiconductor light emitting device according to the first embodiment of the present invention, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like.

  The substrate 10 is, for example, a glass substrate having a thickness of about 30 μm to 1 mm, an inorganic material substrate such as a stainless steel substrate, a sapphire substrate, a silicon substrate, or polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN). , Organic material substrates such as polycarbonate and polyethersulfone (PES), or plastic substrates are used.

  As the gate electrode 120, the Al—Nd layer is disclosed in the above example, but other than that, for example, a metal such as MgAg, Al, Au, Ca, Li, Ta, Ni, and Ti, or a metal such as ITO and IZO, for example. It is formed of an inorganic conductor material or an organic conductor material such as PEDOT. Here, PEDOT is PEDOT: PSS, a material called poly- (3,4-ethylenedioxythiophene): polystyrene sulfonate (Poly- (3,4-ethylenedioxy-thiophene): poly-styrenesulfonate). It is.

In the above example, the example of the Ta ₂ O ₅ layer is disclosed as the gate insulating film 15, but the ratio of the gate insulating film 15 is higher than that of a silicon oxide film such as Si ₃ N ₄ , Al ₂ O ₃ , or TiO _2. An inorganic insulator material having a dielectric constant, or an organic insulator material such as polyimide (PI), polyvinylphenol (PVP), or polyvinyl alcohol (PVA) can also be used.

  For the source electrode 16 and the drain electrode 18, an example of a gold layer is disclosed in the above example, but other examples include metals having a high work function such as Pt and Ta, inorganic conductor materials such as ITO and IZO, An organic conductor material such as PEDOT: poly3,4-ethylenedioxythiophene: polystyrene sulfonic acid (PSS), PVPTA2: TBPAH, Et-PTPDK: TBPAH is used, and the p-type organic semiconductor layer (transistor active layer) 400 is obtained. It is also possible to use materials suitable for carrier injection.

  The p-type organic semiconductor layer (transistor active layer) 400 is formed of an organic semiconductor material such as pentacene, poly-3-hexylthiophene (P3HT), or copper phthalocyanine (CuPc). Pentacene has a molecular structure as shown in FIG. Poly-3-hexylthiophene (P3HT) has a molecular structure as shown in FIG. Copper phthalocyanine (CuPc) has a molecular structure as shown in FIG.

  Alternatively, the p-type organic semiconductor layer (transistor active layer) 400 can be replaced with an inorganic semiconductor material such as a-Si or polysilicon.

(P-type organic semiconductor materials)
FIG. 6 is a molecular structure example of a p-type organic semiconductor material applicable to the p-type organic semiconductor layer (transistor active layer) 400 of the organic semiconductor light-emitting device according to the first embodiment of the present invention.

  FIG. 6A shows an example of the molecular structure of Py105 (Me): 1,6bis (2- (4-methylphenyl) vinyl) pyrene. Although description of the molecular structure is omitted here, for example, similar applicable phenyl organic semiconductor materials include Py105: 1,6 bis (2- (4-buphenyl) vinyl) pyrene, ST10: 4,4′bis. (2- (4-Octylphenyl) vinyl) biphenyl, ST126: 4,4′bis (2- (4-octylphenyl) vinyl) p-terphenyl, ST128: 1,6bis (2- (4-hexylphenyl) ) Vinyl) biphenyl, ST94: 1,4bis (2- (4- (4-butylphenyl) phenyl) vinyl) benzene, ST124: 4,4′bis (2- (5-octylthiophen-2-yl) vinyl ) Biphenyl.

  6B is an example of the molecular structure of tetracene as an acene-based material, FIG. 6C is an example of the molecular structure of pentacene as an acene-based material, and FIG. 6D is a copper phthalocyanine as a phthalocyanine-based material. Example of molecular structure of (CuPc), FIG. 6 (e) is an example of molecular structure of α-NPD, FIG. 6 (f) is an example of molecular structure of P-6P, and FIG. 6 (g) is an example of molecular structure of DBTBT. 6 (h) shows an example of the molecular structure of BV2TVB, FIG. 6 (i) shows an example of the molecular structure of BP2T, and FIG. 6 (j) shows an example of the molecular structure of DHADT.

  Furthermore, FIG. 7 is an example of a molecular structure of a polymer semiconductor material applicable to the p-type organic semiconductor layer (transistor active layer) 400 of the organic semiconductor light emitting device according to the first embodiment of the present invention.

  7A is a molecular structure example of polythiophene (PT), FIG. 7B is a molecular structure example of polyacetylene (PA), and FIG. 7C is a molecular structure example of polythienylene vinylene (PTV). 7 (d) shows an example of the molecular structure of poly-3-hexylthiophene (P3HT), and FIG. 7 (e) shows an example of the molecular structure of 9,9-dioctylfluorene-bithiophene copolymer (F8T2). .

(Hole transport material that forms the hole transport layer)
FIG. 8 shows an example of the molecular structure of the hole transport material forming the hole transport layers 311, 321, 331, 411, 421, 431 applicable to the organic semiconductor light emitting device according to the first embodiment of the present invention. 8A shows a molecular structure example of GPD, FIG. 8B shows a molecular structure example of spiro-TAD, FIG. 8C shows a molecular structure example of spiro-NPD, and FIG. ) Shows examples of the molecular structure of oxidized-TPD, respectively.

  FIG. 9 shows still another hole transport material for forming the hole transport layers 311, 321, 331, 411, 421, 431 applicable to the organic semiconductor light emitting device according to the first embodiment of the present invention. FIG. 9A shows an example of the molecular structure of TDAPB, and FIG. 9B shows an example of the molecular structure of MTDATA.

(Electron transport material forming the electron transport layer)
FIG. 10 shows an example of the molecular structure of the electron transport material for forming the electron transport layers 313, 323, 333, 413, 423, 433 of the organic semiconductor light emitting device according to the first embodiment of the present invention. (A) is an example of the molecular structure of t-butyl-PBD, FIG. 10 (b) is an example of the molecular structure of TAZ, FIG. 10 (c) is an example of the molecular structure of a silole derivative, and FIG. FIG. 10E shows an example of the molecular structure of a substituted triaryl compound, and FIG. 10E shows an example of the molecular structure of a phenylquinoxaline derivative.

FIG. 11 shows an example of the molecular structure of another electron transport material for forming the electron transport layers 313, 323, 333, 413, 423, 433 of the organic semiconductor light emitting device according to the first embodiment of the present invention. 11 (a) shows an example of the molecular structure of Alq ₃ , FIG. 11 (b) shows an example of the molecular structure of BCP, FIG. 11 (c) shows an example of the molecular structure of the oxadiazole dimer, and FIG. d) each shows an example of the molecular structure of starburst oxadiazole.

For the light emitting layers 312,322,332,412,422,432, for example, a carrier transporting light emitting material or a mixed layer of a light emitting dopant and a host material can be applied. Examples of the carrier transporting light-emitting material include Alq, Almq, Mgq, BeBq ₂ , ZnPBO, ZnPBT, Be (5Fla) ₂ , Eu complex, BPVBi, BAlq, Bepp ₂ , BDPHVBi, spiro-BDPVBi, (PSA) ₂ Np Materials such as -5, (PPA) (PSA) Pe-1, BSN, APD, BSB can be used. Examples of the luminescent dopant and host material include coumarin 6, C545T, Qd4, DEQ, perylene, DPT, DCM2, DCJTB, rubrene, DPP, CBP, ABTX, DSA, DSA amine, Co-6, PMDFB, quinacridone, BTX, Materials such as DCM and DCJT can be used. Further, phosphorescent materials and hosts, and peripheral materials include PtOEP, TPBI, btp ₂ Ir (acac), Ir (ppy) ₃ , Flrpic, CDBP, m-CP, dendrimer Ir (ppy) ₃ , TCTA, CF− Materials such as X and CF-Y can be used.

  Further, in the semiconductor light emitting device according to the first embodiment of the present invention, as shown in FIG. 1, an example in which the semiconductor light emitting element portion is configured as a bottom emission type is shown. It can also be configured as a boss emission type.

  According to the first embodiment of the present invention, the hole injection capability from the source / drain electrodes is high, the characteristics of the organic thin film transistor are improved (low voltage drive, high drive current), and the organic thin film transistor and surface light emission are achieved. It is possible to provide an organic semiconductor light emitting device suitable for integration in which the flatness of the organic semiconductor light emitting element is maintained and the light emission characteristics and the yield are improved.

  According to the first embodiment of the present invention, the light emission characteristics such as luminance unevenness / color unevenness due to the luminance variation and emission wavelength variation of the surface emitting organic semiconductor light emitting element are improved, and the decrease in yield is suppressed. In addition, it is possible to provide an organic semiconductor light-emitting device in which the surface-emitting organic semiconductor light-emitting element and the organic thin film transistor are multi-layered to greatly increase the light emission efficiency.

[Second Embodiment]
FIG. 2 is a schematic cross-sectional structure diagram showing an organic semiconductor light-emitting device according to the second embodiment of the present invention, in which organic semiconductor light-emitting elements are integrated in the periphery of a bottom contact type organic thin film transistor.

  Since the organic thin film transistor is configured as a transistor for a driver of an organic semiconductor light emitting element, it is necessary to increase the on-current of the organic thin film transistor for low voltage driving and high luminance light emission. The organic semiconductor light emitting device according to the second embodiment of the present invention realizes a high driving current by applying the structure of the organic thin film transistor shown in FIG.

  As shown in FIG. 2, the organic semiconductor light-emitting device according to the second embodiment of the present invention includes a substrate 10, a gate electrode 120 disposed on the substrate 10, and a gate insulation disposed on the gate electrode 120. Source electrode (160, 20) having a laminated structure of film 15, metal layers 160, 180 spaced apart on gate insulating film 15, and metal layers 20, 22 disposed on metal layers 160, 180 And the drain electrode (180, 22), the organic semiconductor layer 400 disposed on the gate insulating film 15 between the source electrode (160, 20) and the drain electrode (180, 22), and the organic semiconductor layer 400 The hole transport layer 411 disposed, the light emitting layer 412 disposed on the hole transport layer 411, the electron transport layer 413 disposed on the light emitting layer 412, and the holes disposed on the electron transport layer 413 Transport layer 421 A light emitting layer 422 disposed on the hole transport layer 421, an electron transport layer 423 disposed on the light emitting layer 422, a hole transport layer 431 disposed on the electron transport layer 423, and a hole transport A light emitting layer 432 disposed on the layer 431, an electron transport layer 433 disposed on the light emitting layer 432, and a conductor layer 60 disposed on the electron transport layer 433. The function comprises an organic thin film transistor that is larger than the work function of the metal layers 20,22.

  In addition, in the periphery of the organic thin film transistor, an anode electrode 30 disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a light emitting layer 312 disposed on the hole transport layer 311, The electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, the light emitting layer 322 disposed on the hole transport layer 321, and the light emitting layer 322 , The electron transport layer 323 disposed on the electron transport layer 323, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the electron disposed on the light emitting layer 332 It further includes an organic semiconductor light emitting device having a stacked structure of a transport layer 333 and a cathode electrode 40 disposed on the electron transport layer 333.

  A color filter 50 may be disposed on the back surface of the substrate 10 on which the organic semiconductor light emitting element is mounted.

  The metal layers 20 and 22 are formed of gold (Au) electrodes, and the metal layers 160 and 180 are formed of metal oxide having a work function larger than that of the gold electrode.

The metal layers 20 and 22 are formed of a molybdenum oxide layer. The metal layers 20 and 22 may be formed of a mixed layer of a molybdenum oxide (MoO _x ) layer and a chromium layer or a laminated structure of a chromium layer and a molybdenum oxide layer.

For example, the film thickness of the molybdenum oxide (MoO _x ) layer is about 1 nm to 5 nm, preferably about 1.2 nm to 4 nm. The film thickness of the gold (Au) electrode is, for example, about 20 nm to 200 nm, and preferably about 80 nm.

  The gate insulating film 15 may be made of a tantalum oxide film.

Furthermore, specifically, the structure of the organic semiconductor light emitting device according to the second embodiment of the present invention is as shown in FIG. 2 and is arranged on a substrate 10 and an Al-- having a thickness of about 100 nm. A gate electrode 120 made of an Nd layer, a gate insulating film 15 made of a tantalum oxide film (PVD-Ta ₂ O ₅ ) having a thickness of about 100 nm disposed on the gate electrode 120, and spaced apart on the gate insulating film 15 Metal layers 160 and 180 made of a molybdenum oxide (MoO _x ) layer having a thickness of about 2.5 nm and metal layers made of a gold layer having a thickness of about 80 nm and arranged on the metal layers 160 and 180 film 17. On the gate insulating film 15 between the source electrode (160, 20) and the drain electrode (180, 22) having a stacked structure of 20, 22 and between the source electrode (160, 20) and the drain electrode (180, 22). Arranged , For example, a p-type organic semiconductor layer 400 made of Py105 (Me) to be described later and having a thickness of about 50 nm, a hole transport layer 411 disposed on the organic semiconductor layer 400, and a hole transport layer 411. A light-emitting layer 412, an electron transport layer 413 disposed on the light-emitting layer 412, a hole transport layer 421 disposed on the electron transport layer 413, a light-emitting layer 422 disposed on the hole transport layer 421, An electron transport layer 423 disposed on the light emitting layer 422, a hole transport layer 431 disposed on the electron transport layer 423, a light emitting layer 432 disposed on the hole transport layer 431, and the light emitting layer 432 The electron transport layer 433 is disposed, and the conductor layer 60 is disposed on the electron transport layer 433. The work function of the metal layers 160 and 180 is greater than the work function of the metal layers 20 and 22. .

  Further, in the peripheral portion of the organic thin film transistor, it is disposed on the substrate 10, for example, an anode electrode 30 made of ITO, a hole transport layer 311 disposed on the anode electrode 30, and a hole transport layer 311. The light emitting layer 312, the electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, and the light emitting layer 322 disposed on the hole transport layer 321 The electron transport layer 323 disposed on the light emitting layer 322, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the light emitting layer 332 And an organic semiconductor light emitting device having a stacked structure of, for example, a cathode electrode 40 formed of an Al / LiF stacked electrode.

  In addition, the hole transport layers 311 and 411 may be formed at the same time, the hole transport layers 321 and 421 may be formed at the same time, and the hole transport layers 331 and 431 may be formed at the same time. .

  Further, the electron transport layers 313 and 413 may be formed at the same time, the electron transport layers 323 and 423 may be formed at the same time, and the electron transport layers 333 and 433 may be formed at the same time.

  In addition, the light emitting layers 312 and 412 may be formed at the same time, the light emitting layers 322 and 422 may be formed at the same time, and the light emitting layers 332 and 432 may be formed at the same time.

  In the organic semiconductor light emitting element laminated structure, an organic semiconductor layer may be interposed between the anode electrode 30 and the hole transport layer 311 in the same manner as the organic semiconductor layer 400 in the organic thin film transistor laminated structure.

Also in the formation process of the organic semiconductor light emitting device according to the second embodiment of the present invention, as a pretreatment for forming the organic semiconductor layer 400, the gate insulating film 15 made of a tantalum oxide film (PVD-Ta ₂ O ₅ ). The following processing is performed on the surface of the surface for surface cleaning. That is, reverse sputtering of Ar is carried out for about 60 seconds, then UV / O ₃ treatment is carried out for about 2 minutes, and further HMDS treatment is carried out for about 15 minutes in order to make it hydrophobic in a gas phase atmosphere. Further, Ar / O ₂ plasma treatment may be performed.

Furthermore, since the gold layers 20 and 22 forming the source electrode (160, 20) and the drain electrode (180, 22) have a relatively large work function, hole injection into the organic semiconductor layer 400 is easy. Since the molybdenum oxide (MoO _x ) layers 160 and 180 also have a relatively large work function, a sufficient amount of holes can be injected into the organic semiconductor layer 400 having a large work function.

Further, in the bottom contact type organic semiconductor transistor as shown in FIG. 2, the contact resistance at the interface of the organic semiconductor layer 400 / inorganic electrode (160, 180, 20, 22) is reduced.
For this reason, in the drain current I _D -drain voltage V _D characteristics in the organic semiconductor light emitting device according to the second embodiment of the present invention, a result that the on-resistance is low and the on-current is high is obtained.

  That is, according to the organic semiconductor light emitting device according to the second embodiment of the present invention, the organic semiconductor layer is improved in the organic thin film transistor portion by the effect of improving the structure of the source electrode (160, 20) and the drain electrode (180, 22). The amount of holes injected into 400 is increased, and the contact resistance can be reduced, the on-resistance can be reduced, the on-current can be increased, and the transconductance can be increased.

  Although the final structure is not shown in FIG. 2, a nitride film or a silicon oxide film formed by low-temperature growth or a laminate thereof is formed on the conductor layer 60 and the cathode electrode 40. The structure may be formed as a passivation film. Alternatively, a laminated film of an inorganic film and an organic film may be formed as a passivation film. Furthermore, you may provide the package structure by the sealing can which has predetermined space.

  Further, in the organic semiconductor light emitting device according to the second embodiment of the present invention, the absolute value of the HOMO energy level of the p-type organic semiconductor layer 400 is the work function of the capping conductor layer 60 in the organic thin film transistor portion. It should be larger than the absolute value of.

  When an n-type organic semiconductor layer is applied instead of the p-type organic semiconductor layer 400, the absolute value of the LUMO energy level of the n-type organic semiconductor layer is made smaller than the absolute value of the work function of the conductor layer. good.

  As the hole transport layers 411, 421, and 431, for example, α-NPD can be used.

The electron transport layers 412, 422, and 432 can be formed of, for example, Alq ₃ .

  The conductor layer 60 includes, for example, a metal material such as MgAg, Al, Ca, Li, Cs, Ni, and Ti, a metal laminated structure made of LiF / Al, an inorganic conductor material such as ITO and IZO, and an organic conductor such as PEDOT. It can be made of body material.

  Between the p-type organic semiconductor layer 400 and the conductor layer 60, a pn diode constituted by a stacked structure of hole transport layers 411, 421, 431, light emitting layers 412, 422, 432 and electron transport layers 413, 423, 433 The short circuit between the source electrode (160, 20) and the drain electrode (180, 22) can be prevented. That is, the pn diode can prevent the backflow of carriers, and a short circuit between the source and the drain via the conductor layer 60 does not occur in principle.

  As a p-type transistor, when a bias voltage is applied between the source and the drain, the direction of the electric field is the reverse bias of the pn junction between the conductor layer 60 and the drain electrodes (180, 22). Therefore, there is no short circuit between the source electrode (160, 20) and the drain electrode (180, 22).

  Similarly, when a bias voltage is applied between the source and the drain, the capping conductor layer 60 and the source electrode (160, 20) are in a forward bias of a pn junction. It stabilizes with a potential difference corresponding to the forward voltage drop (Vf) of the pn junction from the source electrode (reference potential). The potential inside the p-type organic semiconductor layer (transistor active layer) 400 is stabilized by the electromagnetic shielding effect of the cap conductor layer 60.

  In the structure of the organic semiconductor light emitting device according to the second embodiment of the present invention, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like.

  As the material of the substrate 10, the same material as in the first embodiment can be used.

  As the material of the gate electrode 120, the same material as in the first embodiment can be used.

  As the material of the gate insulating film 15, the same material as that of the first embodiment can be used.

  As the material of the source electrode (160, 20) and the drain electrode (180, 22), the same material as in the first embodiment can be used.

  For example, the p-type organic semiconductor layer (transistor active layer) 400 may be replaced with an inorganic semiconductor material such as a-Si or polysilicon.

(P-type organic semiconductor materials)
The molecular structure examples of the p-type organic semiconductor material shown in FIGS. 6 to 7 can be similarly applied to the organic semiconductor light-emitting device according to the second embodiment of the present invention.

(Hole transport material that forms the hole transport layer)
The molecular structure examples of the hole transport material shown in FIGS. 8 to 9 can be similarly applied to the organic semiconductor light emitting device according to the second embodiment of the present invention.

(Electron transport material forming the electron transport layer)
The example of the molecular structure of the electron transport material shown in FIGS. 10 to 11 can be similarly applied to the organic semiconductor light emitting device according to the second embodiment of the present invention.

(Carrier transporting light emitting material, or light emitting dopant and host material)
The light emitting layers 312, 322, 332, 412, 422, and 432 have the same material as the carrier transporting light emitting material or the light emitting dopant and the host material applied to the organic semiconductor light emitting device according to the first embodiment of the present invention. Can be applied.

  Further, in the semiconductor light emitting device according to the second embodiment of the present invention, as shown in FIG. 2, an example in which the organic semiconductor light emitting element portion is configured as a bottom emission type is shown. Alternatively, it can be configured as a boss emission type.

  According to the second embodiment of the present invention, in an organic semiconductor light emitting device in which an organic thin film transistor and a surface light emitting organic semiconductor light emitting element are integrated on the same substrate, the ability to inject holes from the source / drain electrodes is high, Organic semiconductor suitable for integration that achieves improved characteristics (low voltage drive, high drive current) of organic thin-film transistors, and maintains flatness of organic thin-film transistors and surface-emitting organic semiconductor light-emitting elements, improving light-emitting characteristics and yield A light-emitting device can be provided.

  According to the organic semiconductor light emitting device according to the second embodiment of the present invention, the light emission characteristics such as luminance unevenness / color unevenness due to the luminance variation of the surface emitting organic semiconductor light emitting element and the variation of the emission wavelength are improved, Yield efficiency can be significantly increased by suppressing the decrease in yield and by multilayering the surface emitting organic semiconductor light emitting element and the organic thin film transistor.

[Third embodiment]
FIG. 3 is a schematic cross-sectional structure diagram showing an organic semiconductor light emitting device according to the third embodiment of the present invention, in which organic semiconductor light emitting elements are integrated in the peripheral portion of a bottom contact type organic thin film transistor.

  Since the organic thin film transistor is configured as a transistor for a driver of an organic semiconductor light emitting element, it is necessary to increase the on-current of the organic thin film transistor for low voltage driving and high luminance light emission. The organic semiconductor light emitting device according to the third embodiment of the present invention realizes a high driving current by applying the source / drain electrode structure of the organic thin film transistor shown in FIG. 3 together with the high on-current due to the laminated gate insulating film. is doing.

  As shown in FIG. 3, the organic semiconductor light-emitting device according to the third embodiment of the present invention includes a substrate 10, a gate electrode 120 disposed on the substrate 10, and a gate insulation disposed on the gate electrode 120. Film 15, gate insulating film 170 disposed on gate insulating film 15, metal layers 160 and 180 disposed on gate insulating film 170 and metal layers disposed on metal layers 160 and 180. On the gate insulating film 170 between the source electrode (160, 20) and the drain electrode (180, 22) having a stacked structure of 20, 22 and between the source electrode (160, 20) and the drain electrode (180, 22). The disposed organic semiconductor layer 400, the hole transport layer 411 disposed on the organic semiconductor layer 400, the light emitting layer 412 disposed on the hole transport layer 411, and the electron transport disposed on the light emitting layer 412. layer 413, a hole transport layer 421 disposed on the electron transport layer 413, a light emitting layer 422 disposed on the hole transport layer 421, an electron transport layer 423 disposed on the light emitting layer 422, and an electron transport A hole transport layer 431 disposed on the layer 423, a light emitting layer 432 disposed on the hole transport layer 431, an electron transport layer 433 disposed on the light emitting layer 432, and an electron transport layer 433. And the organic thin film transistor having a larger work function than that of the metal layers 20 and 22.

  A color filter 50 may be disposed on the back surface of the substrate 10 on which the organic semiconductor light emitting element is mounted.

  In addition, in the periphery of the organic thin film transistor, an anode electrode 30 disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a light emitting layer 312 disposed on the hole transport layer 311, The electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, the light emitting layer 322 disposed on the hole transport layer 321, and the light emitting layer 322 , The electron transport layer 323 disposed on the electron transport layer 323, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the electron disposed on the light emitting layer 332 And a transport layer 333.

  The metal layers 20 and 22 are formed of gold (Au) electrodes, and the metal layers 160 and 180 are formed of metal oxide having a work function larger than that of the Au electrodes.

The metal layers 160 and 180 are formed of a molybdenum oxide (MoO _x ) layer.

For example, the film thickness of the molybdenum oxide (MoO _x ) layer is about 1 nm to 5 nm, preferably about 1.2 nm to 4 nm. The film thickness of the gold (Au) electrode is, for example, about 20 nm to 200 nm, and preferably about 80 nm.

Alternatively, the metal layers 160 and 180 may be formed of a mixed layer of a molybdenum oxide (MoO _x ) layer and an ultrathin chromium (Cr) layer having a thickness of about 0.5 nm, for example. Alternatively, the metal layers 160 and 180 may be formed of a laminated structure (Cr / MoO _x ) of a chromium (Cr) layer and a molybdenum oxide (MoO _x ) layer.

Here, the film thickness t of the MoO _x layer will be described from the viewpoint of adhesion to the gate insulating film 170 and adhesion to the gold (Au) layer that is the source / drain electrode.

Since the MoO _x layer has a work function larger than that of the Cr layer, the current driving capability of the organic thin film transistor can be increased. However, the MoO _x layer has lower interfacial adhesion between the SiO ₂ film as the gate insulating film and the gold layer as the source / drain electrodes when compared with the Cr layer. As an example, in a MoO _x (tnm) / Au (80 nm) stacked electrode structure, when t = 2.5 nm, there is no peeling of the source / drain electrodes during the lift-off process. There is no peeling of the source / drain electrodes by the tape test after the trial manufacture. Therefore, when t = 2.5 nm, relatively sufficient adhesion is ensured. On the other hand, when t = 1.2 nm, there is no peeling of the source / drain electrode during the lift-off process, but peeling of the source / drain electrode is observed at the SiO ₂ / MoO _x interface in the tape test after the trial manufacture. . Further, when t = 5 nm, peeling of the source / drain electrode is observed at the SiO ₂ / MoO _x interface during the lift-off process. This is because the adhesive force is greatly reduced due to the film stress of the MoO _x layer.

As a method for improving adhesion, a Cr—MoO _x adhesion layer is preferably formed by co-evaporation of a Cr layer and a MoO _x layer. For example, a Cr-MoO _x mixed layer of 2.5 nm of Cr (33 wt%)-MoO _x (67 wt%) is preferably formed. Alternatively, a Cr / MoO _x adhesion layer having a laminated structure of a Cr layer and a MoO _x layer may be formed. For example, a stacked structure of Cr layer (0.5 nm) / MoO _x layer (2.5 nm) may be formed.

  The gate insulating film 15 is made of an insulating film having a dielectric constant higher than that of the gate insulating film 170, and the gate insulating film 170 is made of a silicon oxide film thinner than the gate insulating film 15, and as a whole is a stacked gate insulating film. It has a structure.

  The gate insulating film 15 may be made of a tantalum oxide film.

  The gate insulating film 15 is made of, for example, a tantalum oxide film having a thickness of 100 nm or less, and the gate insulating film 170 is thinner than the gate insulating film 15, for example, is made of a silicon oxide film having a thickness of about 20 nm or less. A stacked gate insulating film structure may be provided.

Further, specifically, the structure of the organic semiconductor light emitting device according to the third embodiment of the present invention includes a substrate 10 and an Al— having a thickness of about 100 nm, disposed on the substrate 10 as shown in FIG. A gate electrode 120 made of an Nd layer; a gate insulating film 15 made of a tantalum oxide film (PVD-Ta ₂ O ₅ ) having a thickness of about 100 nm; and a gate insulating film 15 arranged on the gate electrode 120; A gate insulating film 170 made of a silicon oxide film (CVD-SiO ₂ ) having a thickness of about 10 nm, and a molybdenum oxide (MoO _x ) layer having a thickness of about 2.5 nm, which is separately disposed on the gate insulating film 170. A source electrode (160, 20) and a drain electrode (180, 22), and a source electrode (160, 20) having a laminated structure of metal layers 160, 180 and a metal layer 20, 22 made of a gold layer having a thickness of about 80 nm. When Between the rain electrodes (180, 22) and disposed on the gate insulating film 170, for example, the p-type organic semiconductor layer 400 made of Py105 (Me) and having a thickness of about 50 nm and the organic semiconductor layer 400 are disposed. Hole transport layer 411, light-emitting layer 412 disposed on hole transport layer 411, electron transport layer 413 disposed on light-emitting layer 412, hole transport layer 421 disposed on electron transport layer 413 A light emitting layer 422 disposed on the hole transport layer 421, an electron transport layer 423 disposed on the light emitting layer 422, a hole transport layer 431 disposed on the electron transport layer 423, and a hole transport A light emitting layer 432 disposed on the layer 431, an electron transport layer 433 disposed on the light emitting layer 432, and a conductor layer 60 disposed on the electron transport layer 433. Function is metal layer 20,2 Comprising a large organic thin than the work functions of.

  Further, in the peripheral portion of the organic thin film transistor, it is disposed on the substrate 10, for example, an anode electrode 30 made of ITO, a hole transport layer 311 disposed on the anode electrode 30, and a hole transport layer 311. The light emitting layer 312, the electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, and the light emitting layer 322 disposed on the hole transport layer 321 The electron transport layer 323 disposed on the light emitting layer 322, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the light emitting layer 332 And an organic semiconductor light emitting device having a stacked structure of, for example, a cathode electrode 40 formed of an Al / LiF stacked electrode.

  In addition, the hole transport layers 311 and 411 may be formed at the same time, the hole transport layers 321 and 421 may be formed at the same time, and the hole transport layers 331 and 431 may be formed at the same time. .

  Further, the electron transport layers 313 and 413 may be formed at the same time, the electron transport layers 323 and 423 may be formed at the same time, and the electron transport layers 333 and 433 may be formed at the same time.

  In addition, the light emitting layers 312 and 412 may be formed at the same time, the light emitting layers 322 and 422 may be formed at the same time, and the light emitting layers 332 and 432 may be formed at the same time.

  In the organic semiconductor light emitting element laminated structure, an organic semiconductor layer may be interposed between the anode electrode 30 and the hole transport layer 311 in the same manner as the organic semiconductor layer 400 in the organic thin film transistor laminated structure.

As a pretreatment for also forming the organic semiconductor layer 400 in the step of forming the organic semiconductor light-emitting device according to a third embodiment of the present invention, the surface of the gate insulating film 170 made of a silicon oxide film (CVD-SiO ₂₎ On the other hand, the following processing is performed for surface cleaning. That is, reverse sputtering of Ar is carried out for about 60 seconds, then UV / O ₃ treatment is carried out for about 2 minutes, and further HMDS treatment is carried out for about 15 minutes in order to make it hydrophobic in a gas phase atmosphere. Further, Ar / O ₂ plasma treatment may be performed.

Furthermore, since the gold (Au) layers 20 and 22 forming the source electrode (160, 20) and the drain electrode (180, 22) have a relatively large work function, it is easy to inject holes into the organic semiconductor layer 400. However, since the molybdenum oxide (MoO _x ) layers 160 and 180 also have a relatively large work function, the amount of holes injected into the organic semiconductor layer 400 having a large work function is sufficiently ensured.

Further, in the bottom contact type organic semiconductor transistor as shown in FIG. 3, the contact resistance at the interface of the organic semiconductor layer 400 / inorganic electrode (160, 180, 20, 22) is reduced.
For this reason, in the drain current I _D -drain voltage V _D characteristics in the organic semiconductor light emitting device according to the third embodiment of the present invention, a result that the on-resistance is low and the on-current is high is obtained.

  That is, according to the organic semiconductor light emitting device according to the third embodiment of the present invention, the organic semiconductor layer is formed in the organic thin film transistor portion by the effect of improving the source electrode (160, 20) and drain electrode (180, 22) structure. The amount of holes injected into 400 is increased, and the contact resistance can be reduced, the on-resistance can be reduced, the on-current can be increased, and the transconductance can be increased.

  Although the final structure is not shown in FIG. 3, a nitride film or a silicon oxide film formed by low-temperature growth or a laminate thereof is formed on the conductor layer 60 and the cathode electrode 40. The structure may be formed as a passivation film. Alternatively, a laminated film of an inorganic film and an organic film may be formed as a passivation film. Furthermore, you may provide the package structure by the sealing can which has predetermined space.

  In the organic semiconductor light emitting device according to the third embodiment of the present invention, the absolute value of the HOMO energy level of the p-type organic semiconductor layer 400 is the work function of the capping conductor layer 60 in the organic thin film transistor portion. It should be larger than the absolute value of.

  When an n-type organic semiconductor layer is applied instead of the p-type organic semiconductor layer 400, the absolute value of the LUMO energy level of the n-type organic semiconductor layer is made smaller than the absolute value of the work function of the conductor layer. good.

  As the hole transport layers 411, 421, and 431, for example, α-NPD can be used.

The electron transport layers 412, 422, and 432 can be formed of, for example, Alq ₃ .

  The conductor layer 60 includes, for example, a metal material such as MgAg, Al, Ca, Li, Cs, Ni, and Ti, a metal laminated structure made of LiF / Al, an inorganic conductor material such as ITO and IZO, and an organic conductor such as PEDOT. It can be made of body material.

  Between the p-type organic semiconductor layer 400 and the conductor layer 60, a pn diode constituted by a stacked structure of hole transport layers 411, 421, 431, light emitting layers 412, 422, 432 and electron transport layers 413, 423, 433 The short circuit between the source electrode (160, 20) and the drain electrode (180, 22) can be prevented. That is, the pn diode can prevent the backflow of carriers, and a short circuit between the source and the drain via the conductor layer 60 does not occur in principle.

  As a p-type transistor, when a bias voltage is applied between the source and the drain, the direction of the electric field is the reverse bias of the pn junction between the conductor layer 60 and the drain electrodes (180, 22). Therefore, there is no short circuit between the source electrode (160, 20) and the drain electrode (180, 22).

  Similarly, when a bias voltage is applied between the source and the drain, the capping conductor layer 60 and the source electrode (160, 20) are in a forward bias of a pn junction. It stabilizes with a potential difference corresponding to the forward voltage drop (Vf) of the pn junction from the source electrode (reference potential). The potential inside the p-type organic semiconductor layer (transistor active layer) 400 is stabilized by the electromagnetic shielding effect of the cap conductor layer 60.

  In the structure of the organic semiconductor light emitting device according to the third embodiment of the present invention, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like.

  As the material of the substrate 10, the same material as that of the first to second embodiments can be used.

  As the material of the gate electrode 120, the same material as that in the first to second embodiments can be used.

  As the material of the gate insulating film 15, the same material as that in the first and second embodiments can be used.

  As the material of the source electrode (160, 20) and the drain electrode (180, 22), the same material as in the second embodiment can be used.

  For example, the p-type organic semiconductor layer (transistor active layer) 400 may be replaced with an inorganic semiconductor material such as a-Si or polysilicon.

(P-type organic semiconductor materials)
The molecular structure examples of the p-type organic semiconductor material shown in FIGS. 6 to 7 can be similarly applied to the organic semiconductor light-emitting device according to the third embodiment of the present invention.

(Hole transport material that forms the hole transport layer)
The example of the molecular structure of the hole transport material shown in FIGS. 8 to 9 can be similarly applied to the organic semiconductor light emitting device according to the third embodiment of the present invention.

(Electron transport material forming the electron transport layer)
The molecular structure examples of the electron transport material shown in FIGS. 10 to 11 can be similarly applied to the organic semiconductor light emitting device according to the third embodiment of the present invention.

(Carrier transporting light emitting material, or light emitting dopant and host material)
The light emitting layers 312, 322, 332, 412, 422, and 432 include a carrier transporting light emitting material or a light emitting dopant and a host material applied to the organic semiconductor light emitting devices according to the first to second embodiments of the present invention. Similar materials can be applied.

  Further, in the semiconductor light emitting device according to the third embodiment of the present invention, as shown in FIG. 3, an example in which the organic semiconductor light emitting element portion is configured as a bottom emission type is shown. Alternatively, it can be configured as a boss emission type.

  According to the third embodiment of the present invention, in an organic semiconductor light emitting device in which an organic thin film transistor and a surface light emitting organic semiconductor light emitting element are integrated on the same substrate, the ability to inject holes from the source / drain electrodes is high, High dielectric constant insulating film is used as gate insulating film of organic thin film transistor, surface modification is easy, organic semiconductor material orientation control is good, and characteristics of organic thin film transistor (low voltage drive, high drive current) are achieved. In addition, the flatness of the organic thin-film transistor and the surface-emitting organic semiconductor light-emitting element can be maintained, and an organic semiconductor light-emitting device suitable for integration that improves the light emission characteristics and the yield can be provided.

  According to the organic semiconductor light-emitting device of the third embodiment of the present invention, the luminance variation of the surface-emitting organic semiconductor light-emitting element, the emission characteristics such as luminance unevenness / color unevenness due to the emission wavelength variation, Yield efficiency can be greatly increased by suppressing a decrease in yield and by multilayering a surface-emitting organic semiconductor light-emitting element and an organic thin-film transistor.

[Fourth embodiment]
FIG. 4 is a schematic cross-sectional structure diagram showing an organic semiconductor light-emitting device according to the fourth embodiment of the present invention, in which organic semiconductor light-emitting elements are integrated in the periphery of a bottom contact type organic thin film transistor.

  Since the organic thin film transistor is configured as a transistor for a driver of an organic semiconductor light emitting element, it is necessary to increase the on-current of the organic thin film transistor for low voltage driving and high luminance light emission. The organic semiconductor light emitting device according to the fourth embodiment of the present invention has a higher on-current due to the stacked gate insulating film and a higher driving current by applying the organic thin film transistor structure shown in FIG. 4 to the source / drain electrodes. Is realized.

  As shown in FIG. 4, the structure of the organic semiconductor light emitting device according to the fourth embodiment of the present invention is disposed on the substrate 10, the gate electrode 120 disposed on the substrate 10, and the gate electrode 120. Gate insulating film 15, gate insulating film 170 disposed on gate insulating film 15, metal layers 160 and 180 disposed separately on gate insulating film 170, and disposed on metal layers 160 and 180 Source electrode (160, 20, 260) and drain electrode (180, 22, 280) having a laminated structure of metal layers 20, 22 and metal layers 260, 280 disposed on metal layers 20, 22, and source The organic semiconductor layer 400 disposed on the gate insulating film 170 between the electrodes (160, 20, 260) and the drain electrodes (180, 22, 280), and the hole transport layer disposed on the organic semiconductor layer 400 411 A light emitting layer 412 disposed on the hole transport layer 411, an electron transport layer 413 disposed on the light emitting layer 412, a hole transport layer 421 disposed on the electron transport layer 413, and a hole transport A light-emitting layer 422 disposed on the layer 421, an electron transport layer 423 disposed on the light-emitting layer 422, a hole transport layer 431 disposed on the electron transport layer 423, and a hole transport layer 431. The light emitting layer 432, the electron transport layer 433 disposed on the light emitting layer 432, and the conductor layer 60 disposed on the electron transport layer 433, and the metal layers 160 and 180 and the metal layers 260 and 280 are provided. The organic thin film transistor having a work function larger than that of the metal layers 20 and 22 is provided.

  In addition, in the periphery of the organic thin film transistor, an anode electrode 30 disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a light emitting layer 312 disposed on the hole transport layer 311, The electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, the light emitting layer 322 disposed on the hole transport layer 321, and the light emitting layer 322 , The electron transport layer 323 disposed on the electron transport layer 323, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the electron disposed on the light emitting layer 332 An organic semiconductor light emitting device having a stacked structure of a transport layer 333 and a cathode electrode 40 disposed on the electron transport layer 333 is further provided.

  A color filter 50 may be disposed on the back surface of the substrate 10 on which the organic semiconductor light emitting element is mounted.

  The metal layers 20 and 22 are formed of gold (Au) electrodes, and the metal layers 160 and 180 and the metal layers 260 and 280 are formed of metal oxide having a work function larger than that of the gold electrode.

The metal layers 160 and 180 and the metal layers 260 and 280 are formed of a molybdenum oxide (MoO _x ) layer.

For example, the film thickness of the molybdenum oxide (MoO _x ) layer is about 1 nm to 5 nm, preferably about 1.2 nm to 4 nm. The film thickness of the gold (Au) electrode is, for example, about 20 nm to 200 nm, and preferably about 80 nm.

Alternatively, the metal layers 160 and 180 may be formed of a mixed layer of a molybdenum oxide (MoO _x ) layer and, for example, an extremely thin chromium (Cr) layer having a thickness of about 0.5 nm. Alternatively, the metal layers 160 and 180 may be formed of a laminated structure (Cr / MoO _x ) of a chromium (Cr) layer and a molybdenum oxide (MoO _x ) layer.

Since the MoO _x layer has a work function larger than that of the Cr layer, the current driving capability of the organic thin film transistor can be increased. However, the MoO _x layer has lower interfacial adhesion between the SiO ₂ film as the gate insulating film and the gold layer as the source / drain electrodes when compared with the Cr layer. As an example, in a MoO _x (tnm) / Au (80 nm) / MoO _x (tnm) stacked electrode structure, when t = 2.5 nm, there is no peeling of the source / drain electrodes during the lift-off process. There is no peeling of the source / drain electrodes by the tape test after the trial manufacture. Therefore, when t = 2.5 nm, relatively sufficient adhesion is ensured. On the other hand, when t = 1.2 nm, there is no peeling of the source / drain electrode during the lift-off process, but peeling of the source / drain electrode is observed at the SiO ₂ / MoO _x interface in the tape test after the trial manufacture. . Further, when t = 5 nm, peeling of the source / drain electrode is observed at the SiO ₂ / MoO _x interface during the lift-off process. This is because the adhesive force is greatly reduced due to the film stress of the MoO _x layer.

As a method for improving adhesion, a Cr—MoO _x adhesion layer is preferably formed by co-evaporation of a Cr layer and a MoO _x layer. For example, a Cr-MoO _x mixed layer of 2.5 nm of Cr (33 wt%)-MoO _x (67 wt%) is preferably formed.

Alternatively, a Cr / MoO _x adhesion layer having a laminated structure of a Cr layer and a MoO _x layer may be formed. For example, a laminated structure of Cr layer (0.5 nm) / MoO _x layer (2.5 nm) may be formed.

  The gate insulating film 15 is made of an insulating film having a dielectric constant higher than that of the gate insulating film 170, and the gate insulating film 170 is made of a silicon oxide film thinner than the gate insulating film 15, and as a whole is a stacked gate insulating film. It has a structure.

  The gate insulating film 15 may be made of a tantalum oxide film.

  The gate insulating film 15 is made of, for example, a tantalum oxide film having a thickness of 100 nm or less, and the gate insulating film 170 is thinner than the gate insulating film 15, for example, is made of a silicon oxide film having a thickness of about 5 nm or less. A stacked gate insulating film structure may be provided.

Furthermore, specifically, the structure of the organic semiconductor light emitting device according to the fourth embodiment of the present invention is, as shown in FIG. 4, a substrate 10 and an Al— having a thickness of about 100 nm, disposed on the substrate 10. A gate electrode 120 made of an Nd layer; a gate insulating film 15 made of a tantalum oxide film (PVD-Ta ₂ O ₅ ) having a thickness of about 100 nm; and a gate insulating film 15 arranged on the gate electrode 120; A gate insulating film 170 made of a silicon oxide film (CVD-SiO ₂ ) having a thickness of about 5 nm, and a molybdenum oxide (MoO _x ) layer having a thickness of about 2.5 nm, which is separately disposed on the gate insulating film 170. The metal layers 160 and 180, and the metal layers 20 and 22 made of a gold layer having a thickness of about 80 nm and the metal layers 20 and 22 are arranged on the metal layers 160 and 180, and the thickness is about 2.5 nm. Molybdenum oxide (M O _X) a source electrode (160,20,260) and a drain electrode (180,22,280) having a laminated structure of a metal layer 260, 280 made of layer, a source electrode (160,20,260) and a drain electrode (180, 22, 280) and disposed on the gate insulating film 170, for example, a p-type organic semiconductor layer 400 made of Py105 (Me) and having a thickness of about 50 nm, and the organic semiconductor layer 400. Hole transport layer 411, light-emitting layer 412 disposed on hole transport layer 411, electron transport layer 413 disposed on light-emitting layer 412, hole transport layer 421 disposed on electron transport layer 413 A light emitting layer 422 disposed on the hole transport layer 421, an electron transport layer 423 disposed on the light emitting layer 422, a hole transport layer 431 disposed on the electron transport layer 423, and a hole transport On layer 431 A light emitting layer 432 disposed thereon, an electron transporting layer 433 disposed on the light emitting layer 432, and a conductor layer 60 disposed on the electron transporting layer 433, for example, made of an Al / LiF laminated electrode. The work functions of 160 and 180 and the metal layers 260 and 280 include organic thin film transistors that are larger than the work functions of the metal layers 20 and 22.

  Further, in the peripheral portion of the organic thin film transistor, it is disposed on the substrate 10, for example, an anode electrode 30 made of ITO, a hole transport layer 311 disposed on the anode electrode 30, and a hole transport layer 311. The light emitting layer 312, the electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, and the light emitting layer 322 disposed on the hole transport layer 321 The electron transport layer 323 disposed on the light emitting layer 322, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the light emitting layer 332 And an organic semiconductor light emitting device having a stacked structure of, for example, a cathode electrode 40 formed of an Al / LiF stacked electrode.

  In addition, the hole transport layers 311 and 411 may be formed at the same time, the hole transport layers 321 and 421 may be formed at the same time, and the hole transport layers 331 and 431 may be formed at the same time. .

  Further, the electron transport layers 313 and 413 may be formed at the same time, the electron transport layers 323 and 423 may be formed at the same time, and the electron transport layers 333 and 433 may be formed at the same time.

  In addition, the light emitting layers 312 and 412 may be formed at the same time, the light emitting layers 322 and 422 may be formed at the same time, and the light emitting layers 332 and 432 may be formed at the same time.

  In the organic semiconductor light emitting element laminated structure, an organic semiconductor layer may be interposed between the anode electrode 30 and the hole transport layer 311 in the same manner as the organic semiconductor layer 400 in the organic thin film transistor laminated structure.

As pretreatment for forming the organic semiconductor layer 400 even in the step of forming the organic semiconductor light-emitting device according to a fourth embodiment of the present invention, the surface of the gate insulating film 170 made of a silicon oxide film (CVD-SiO ₂₎ On the other hand, the following processing is performed for surface cleaning. That is, reverse sputtering of Ar is carried out for about 60 seconds, then UV / O ₃ treatment is carried out for about 2 minutes, and further HMDS treatment is carried out for about 15 minutes in order to make it hydrophobic in a gas phase atmosphere. Further, Ar / O ₂ plasma treatment may be performed.

Furthermore, since the gold layers 20 and 22 forming the source electrode (160, 20) and the drain electrode (180, 22) have a relatively large work function, hole injection into the organic semiconductor layer 400 is easy. Since the molybdenum oxide (MoO _x ) layers 160 and 180 also have a relatively large work function, a sufficient amount of holes can be injected into the organic semiconductor layer 400 having a large work function.

Further, in the bottom contact type organic semiconductor transistor as shown in FIG. 4, the contact resistance at the interface of the organic semiconductor layer 400 / inorganic electrode (160, 180, 20, 22) is reduced.
For this reason, in the drain current I _D -drain voltage V _D characteristic in the organic semiconductor light emitting device according to the fourth embodiment of the present invention, a result that the on-resistance is low and the on-current is high is obtained.

  That is, according to the organic semiconductor light emitting device according to the fourth embodiment of the present invention, the organic thin film transistor portion is improved by the structure of the source electrode (160, 20, 260) and the drain electrode (180, 22, 280). In addition, the amount of holes injected into the organic semiconductor layer 400 increases, and it is possible to reduce contact resistance, reduce on-resistance, increase on-current, and increase transconductance.

  Although the final structure is not shown in FIG. 4, a nitride film or silicon oxide film formed by low-temperature growth or a laminate thereof is formed on the conductor layer 60 and the cathode electrode 40. The structure may be formed as a passivation film. Alternatively, a laminated film of an inorganic film and an organic film may be formed as a passivation film. Furthermore, you may provide the package structure by the sealing can which has predetermined space.

  In the organic semiconductor light emitting device according to the fourth embodiment of the present invention, the absolute value of the HOMO energy level of the p-type organic semiconductor layer 400 is the work function of the capping conductor layer 60 in the organic thin film transistor portion. It should be larger than the absolute value of.

  When an n-type organic semiconductor layer is applied instead of the p-type organic semiconductor layer 400, the absolute value of the LUMO energy level of the n-type organic semiconductor layer is made smaller than the absolute value of the work function of the conductor layer. good.

  As the hole transport layers 411, 421, and 431, for example, α-NPD can be used.

The electron transport layers 412, 422, and 432 can be formed of, for example, Alq ₃ .

  The conductor layer 60 includes, for example, a metal material such as MgAg, Al, Ca, Li, Cs, Ni, and Ti, a metal laminated structure made of LiF / Al, an inorganic conductor material such as ITO and IZO, and an organic conductor such as PEDOT. It can be made of body material.

  Between the p-type organic semiconductor layer 400 and the conductor layer 60, a pn diode constituted by a stacked structure of hole transport layers 411, 421, 431, light emitting layers 412, 422, 432 and electron transport layers 413, 423, 433 Therefore, it is possible to prevent a short circuit between the source electrode (160, 20, 260) and the drain electrode (180, 22, 280). That is, the pn diode can prevent the backflow of carriers, and a short circuit between the source and the drain via the conductor layer 60 does not occur in principle.

  As a p-type transistor, when a bias voltage is applied between the source and the drain, the direction of the electric field between the conductor layer 60 and the drain electrodes (180, 22, 280) is a reverse bias of a pn junction. There is no short circuit between the source electrode (160, 20, 260) and the drain electrode (180, 22, 280) via 60.

  Similarly, when a bias voltage is applied between the source and the drain, the cap conductor layer 60 and the source electrode (160, 20, 260) are in the forward bias of the pn junction, and therefore the cap conductor layer. 60 stabilizes with a potential difference corresponding to the forward voltage drop (Vf) of the pn junction from the source electrode (reference potential). The potential inside the p-type organic semiconductor layer (transistor active layer) 400 is stabilized by the electromagnetic shielding effect of the cap conductor layer 60.

  In the structure of the organic semiconductor light emitting device according to the fourth embodiment of the present invention, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like.

  As the material of the substrate 10, the same material as in the first to third embodiments can be used.

  As the material of the gate electrode 120, the same material as in the first to third embodiments can be used.

  As the material of the gate insulating film 15, the same material as in the first to third embodiments can be used.

  As the material of the source electrode (160, 20, 260) and the drain electrode (180, 22, 280), the same material as that of the third embodiment can be used.

  For example, the p-type organic semiconductor layer (transistor active layer) 400 may be replaced with an inorganic semiconductor material such as a-Si or polysilicon.

(P-type organic semiconductor materials)
The molecular structure examples of the p-type organic semiconductor material shown in FIGS. 6 to 7 can be similarly applied to the organic semiconductor light emitting device according to the fourth embodiment of the present invention.

(Hole transport material that forms the hole transport layer)
The molecular structure examples of the hole transport material shown in FIGS. 8 to 9 can be similarly applied to the organic semiconductor light emitting device according to the fourth embodiment of the present invention.

(Electron transport material forming the electron transport layer)
The molecular structure examples of the electron transport material shown in FIGS. 10 to 11 can be similarly applied to the organic semiconductor light emitting device according to the fourth embodiment of the present invention.

(Carrier transporting light emitting material, or light emitting dopant and host material)
The light emitting layers 312, 322, 332, 412, 422, and 432 include a carrier transporting light emitting material or a light emitting dopant and a host material applied to the organic semiconductor light emitting devices according to the first to third embodiments of the present invention. Similar materials can be applied.

  Further, in the semiconductor light emitting device according to the fourth embodiment of the present invention, as shown in FIG. 4, an example in which the organic semiconductor light emitting element portion is configured as a bottom emission type is shown. Alternatively, it can be configured as a boss emission type.

  According to the fourth embodiment of the present invention, in the organic semiconductor light emitting device in which the organic thin film transistor and the surface emitting organic semiconductor light emitting element are integrated on the same substrate, the hole injection capability from the source / drain electrode is high, High dielectric constant insulating film is used as gate insulating film of organic thin film transistor, surface modification is easy, organic semiconductor material orientation control is good, and characteristics of organic thin film transistor (low voltage drive, high drive current) are achieved. In addition, the flatness of the organic thin-film transistor and the surface-emitting organic semiconductor light-emitting element can be maintained, and an organic semiconductor light-emitting device suitable for integration that improves the light emission characteristics and the yield can be provided.

  According to the organic semiconductor light-emitting device of the fourth embodiment of the present invention, the luminance variation of the surface-emitting organic semiconductor light-emitting element, the luminance characteristics such as luminance unevenness / color unevenness due to the emission wavelength variation, are improved, Yield efficiency can be greatly increased by suppressing a decrease in yield and by multilayering a surface-emitting organic semiconductor light-emitting element and an organic thin-film transistor.

[Fifth embodiment]
FIG. 5 is a schematic cross-sectional structure diagram showing an organic semiconductor light-emitting device according to a fifth embodiment of the present invention, in which organic semiconductor light-emitting elements are integrated in the periphery of a top contact type organic semiconductor light-emitting device. .

  As shown in FIG. 5, the organic semiconductor light emitting device according to the fifth embodiment of the present invention has a configuration in which an organic thin film transistor having a top contact type structure and an organic semiconductor light emitting element are integrated.

  Since the organic thin film transistor is configured as a transistor for a driver of an organic semiconductor light emitting element, it is necessary to increase the on-current of the organic thin film transistor for low voltage driving and high luminance light emission. The organic semiconductor light emitting device according to the fifth embodiment of the present invention realizes a higher driving current by applying the structure of the organic thin film transistor shown in FIG. 5 together with the high on-current due to the stacked gate insulating film. .

  As shown in FIG. 5, the organic semiconductor light-emitting device according to the fifth embodiment of the present invention includes a substrate 10, a gate electrode 120 disposed on the substrate 10, and a gate insulation disposed on the gate electrode 120. A film 15, a gate insulating film 170 disposed on the gate insulating film 15, an organic semiconductor layer 400 disposed on the gate insulating film 170, and a metal layer 160 disposed separately on the organic semiconductor layer 400, 180, a source electrode (160, 20, 260) having a laminated structure of metal layers 20, 22 disposed on the metal layers 160, 180, and metal layers 260, 280 disposed on the metal layers 20, 22. A drain electrode (180, 22, 280), a hole transport layer 411 disposed on the organic semiconductor layer 400 and on the source electrode (160, 20, 260) and the drain electrode (180, 22, 280); On the light-emitting layer 412 disposed on the hole transport layer 411, the electron transport layer 413 disposed on the light-emitting layer 412, the hole transport layer 421 disposed on the electron transport layer 413, and the hole transport layer 421 A light emitting layer 422 disposed on the light emitting layer 422, an electron transporting layer 423 disposed on the light emitting layer 422, a hole transporting layer 431 disposed on the electron transporting layer 423, and a light emitting disposed on the hole transporting layer 431. A layer 432, an electron transport layer 433 disposed on the light emitting layer 432, and a conductor layer 60 disposed on the electron transport layer 433. The work functions of the metal layers 160 and 180 and the metal layers 260 and 280 are An organic thin film transistor having a larger work function than the metal layers 20 and 22 is provided.

  In addition, in the periphery of the organic thin film transistor, an anode electrode 30 disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a light emitting layer 312 disposed on the hole transport layer 311, The electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, the light emitting layer 322 disposed on the hole transport layer 321, and the light emitting layer 322 , The electron transport layer 323 disposed on the electron transport layer 323, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the electron disposed on the light emitting layer 332 An organic semiconductor light emitting device having a stacked structure of a transport layer 333 and a cathode electrode 40 disposed on the electron transport layer 333 is further provided.

  A color filter 50 may be disposed on the back surface of the substrate 10 on which the organic semiconductor light emitting element is mounted.

  The metal layers 20 and 22 are formed of gold (Au) electrodes, and the metal layers 160 and 180 and the metal layers 260 and 280 are formed of metal oxide having a work function larger than that of the gold electrode.

The metal layers 160 and 180 and the metal layers 260 and 280 are formed of a molybdenum oxide (MoO _x ) layer.

For example, the film thickness of the molybdenum oxide (MoO _x ) layer is about 1 nm to 5 nm, preferably about 1.2 nm to 4 nm. The film thickness of the gold (Au) electrode is, for example, about 20 nm to 200 nm, and preferably about 80 nm.

Alternatively, the metal layers 160 and 180 may be formed of a mixed layer of a molybdenum oxide (MoO _x ) layer and, for example, an extremely thin chromium (Cr) layer having a thickness of about 0.5 nm. Alternatively, the metal layers 160 and 180 may be formed of a laminated structure (Cr / MoO _x ) of a chromium (Cr) layer and a molybdenum oxide (MoO _x ) layer.

Since the MoO _x layer has a work function larger than that of the Cr layer, the current driving capability of the organic thin film transistor can be increased. However, the MoO _x layer has lower interfacial adhesion between the SiO ₂ film as the gate insulating film and the gold layer as the source / drain electrodes when compared with the Cr layer. As an example, in a MoO _x (tnm) / Au (80 nm) / MoO _x (tnm) stacked electrode structure, when t = 2.5 nm, there is no peeling of the source / drain electrodes during the lift-off process. There is no peeling of the source / drain electrodes by the tape test after the trial manufacture. Therefore, when t = 2.5 nm, relatively sufficient adhesion is ensured. On the other hand, when t = 1.2 nm, there is no peeling of the source / drain electrode during the lift-off process, but peeling of the source / drain electrode is observed at the SiO ₂ / MoO _x interface in the tape test after the trial manufacture. . Further, when t = 5 nm, peeling of the source / drain electrode is observed at the SiO ₂ / MoO _x interface during the lift-off process. This is because the adhesive force is greatly reduced due to the film stress of the MoO _x layer.

As a method for improving adhesion, a Cr—MoO _x adhesion layer is preferably formed by co-evaporation of a Cr layer and a MoO _x layer. For example, a Cr-MoO _x mixed layer of 2.5 nm of Cr (33 wt%)-MoO _x (67 wt%) is preferably formed.

Alternatively, a Cr / MoO _x adhesion layer having a laminated structure of a Cr layer and a MoO _x layer may be formed. For example, a laminated structure of Cr layer (0.5 nm) / MoO _x layer (2.5 nm) may be formed.

  The gate insulating film 15 is made of an insulating film having a dielectric constant higher than that of the gate insulating film 170, and the gate insulating film 170 is made of a silicon oxide film thinner than the gate insulating film 15, and as a whole is a stacked gate insulating film. It has a structure.

  The gate insulating film 15 may be made of a tantalum oxide film.

  The gate insulating film 15 is made of, for example, a tantalum oxide film having a thickness of 100 nm or less, and the gate insulating film 170 is thinner than the gate insulating film 15, for example, is made of a silicon oxide film having a thickness of about 5 nm or less. A stacked gate insulating film structure may be provided.

Furthermore, specifically, the structure of the organic semiconductor light emitting device according to the fifth embodiment of the present invention is, as shown in FIG. 5, a substrate 10 and an Al— having a thickness of about 100 nm, disposed on the substrate 10. A gate electrode 120 made of an Nd layer; a gate insulating film 15 made of a tantalum oxide film (PVD-Ta ₂ O ₅ ) having a thickness of about 100 nm; and a gate insulating film 15 arranged on the gate electrode 120; A gate insulating film 170 made of a silicon oxide film (CVD-SiO ₂ ) having a thickness of about 10 nm, and a p-type organic semiconductor layer 400 having a thickness of about 50 nm made of, for example, Py105 (Me), disposed on the gate insulating film 170. When, are spaced on the p-type organic semiconductor layer 400, molybdenum oxide with a thickness of about 2.5nm and the metal layer 160 and 180 made of (MoO _X) layer, distribution on the metal layer 160 and 180 film 17 Is, the metal layer 20 and 22 made of gold layer having a thickness of about 80 nm, is disposed on the metal layers 20 and 22, molybdenum oxide having a thickness of about 2.5 nm (MoO _X) consisting of layer metal layer 260, 280 Source electrode (160, 20, 260) and drain electrode (180, 22, 280) having a laminated structure of the above, and organic semiconductor layer 400 and source electrode (160, 20, 260) and drain electrode (180, 22, 280). ) Disposed on the hole transport layer 411, the light emitting layer 412 disposed on the hole transport layer 411, the electron transport layer 413 disposed on the light emitting layer 412, and the electron transport layer 413. Hole transport layer 421, light emitting layer 422 disposed on hole transport layer 421, electron transport layer 423 disposed on light emitting layer 422, hole transport layer disposed on electron transport layer 423 431 and holes A light emitting layer 432 disposed on the transport layer 431, an electron transport layer 433 disposed on the light emitting layer 432, and a conductor layer 60 disposed on the electron transport layer 433, the metal layers 160, 180 and The work functions of the metal layers 260 and 280 include organic thin film transistors that are larger than the work functions of the metal layers 20 and 22.

  Further, in the peripheral portion of the organic thin film transistor, it is disposed on the substrate 10, for example, an anode electrode 30 made of ITO, a hole transport layer 311 disposed on the anode electrode 30, and a hole transport layer 311. The light emitting layer 312, the electron transport layer 313 disposed on the light emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, and the light emitting layer 322 disposed on the hole transport layer 321 The electron transport layer 323 disposed on the light emitting layer 322, the hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, and the light emitting layer 332 And an organic semiconductor light emitting device having a stacked structure of, for example, a cathode electrode 40 formed of an Al / LiF stacked electrode.

  In addition, the hole transport layers 311 and 411 may be formed at the same time, the hole transport layers 321 and 421 may be formed at the same time, and the hole transport layers 331 and 431 may be formed at the same time. .

  Further, the electron transport layers 313 and 413 may be formed at the same time, the electron transport layers 323 and 423 may be formed at the same time, and the electron transport layers 333 and 433 may be formed at the same time.

  In addition, the light emitting layers 312 and 412 may be formed at the same time, the light emitting layers 322 and 422 may be formed at the same time, and the light emitting layers 332 and 432 may be formed at the same time.

  In the organic semiconductor light emitting element laminated structure, an organic semiconductor layer may be interposed between the anode electrode 30 and the hole transport layer 311 in the same manner as the organic semiconductor layer 400 in the organic thin film transistor laminated structure.

Also in the formation process of the organic semiconductor light emitting device according to the fifth embodiment of the present invention, as a pretreatment for forming the organic semiconductor layer 400, the surface of the gate insulating film 170 made of a silicon oxide film (CVD-SiO ₂ ). On the other hand, the following processing is performed for surface cleaning. That is, reverse sputtering of Ar is carried out for about 60 seconds, then UV / O ₃ treatment is carried out for about 2 minutes, and further HMDS treatment is carried out for about 15 minutes in order to make it hydrophobic in a gas phase atmosphere. Further, Ar / O ₂ plasma treatment may be performed.

Furthermore, since the gold layers 20 and 22 forming the source electrode (160, 20, 260) and the drain electrode (180, 22, 280) have a relatively large work function, holes can be easily injected into the organic semiconductor layer 400. However, since the molybdenum oxide (MoO _x ) layers 160, 180, 260, and 280 also have a relatively large work function, a sufficient amount of hole injection into the organic semiconductor layer 400 having a large work function is ensured. .

Further, in the top contact type organic semiconductor transistor as shown in FIG. 5, the contact resistance at the interface of the organic semiconductor layer 400 / inorganic electrode (160, 180, 20, 22, 260, 280) is reduced.
For this reason, in the drain current I _D -drain voltage V _D characteristic in the organic semiconductor light emitting device according to the fifth embodiment of the present invention, the result that the on-resistance is low and the on-current is high is obtained.

  That is, according to the organic semiconductor light emitting device according to the fifth embodiment of the present invention, the organic thin film transistor portion is improved by the structure of the source electrode (160, 20, 260) and the drain electrode (180, 22, 280). In addition, the amount of holes injected into the organic semiconductor layer 400 increases, and it is possible to reduce contact resistance, reduce on-resistance, increase on-current, and increase transconductance.

  Although the final structure is not shown in FIG. 5, a nitride film or silicon oxide film formed by low-temperature growth or a laminate thereof is formed on the conductor layer 60 and the cathode electrode 40. The structure may be formed as a passivation film. Alternatively, a laminated film of an inorganic film and an organic film may be formed as a passivation film. Furthermore, you may provide the package structure by the sealing can which has predetermined space.

  In the organic semiconductor light emitting device according to the fifth embodiment of the present invention, the absolute value of the HOMO energy level of the p-type organic semiconductor layer 400 is the work function of the capping conductor layer 60 in the organic thin film transistor portion. It should be larger than the absolute value of.

  When an n-type organic semiconductor layer is applied instead of the p-type organic semiconductor layer 400, the absolute value of the LUMO energy level of the n-type organic semiconductor layer is made smaller than the absolute value of the work function of the conductor layer. good.

  As the hole transport layers 411, 421, and 431, for example, α-NPD can be used.

The electron transport layers 412, 422, and 432 can be formed of, for example, Alq ₃ .

  The conductor layer 60 includes, for example, a metal material such as MgAg, Al, Ca, Li, Cs, Ni, and Ti, a metal laminated structure made of LiF / Al, an inorganic conductor material such as ITO and IZO, and an organic conductor such as PEDOT. It can be made of body material.

  A source electrode (160, 20, 260) and a drain electrode (by a pn diode constituted by a stacked structure of a hole transport layer 411, 421, 431, a light emitting layer 412, 422, 432 and an electron transport layer 413, 423, 433 ( 180, 22, 280) can be prevented. That is, the pn diode can prevent the backflow of carriers, and a short circuit between the source and the drain via the conductor layer 60 does not occur in principle.

  As a p-type transistor, when a bias voltage is applied between the source and the drain, the direction of the electric field between the conductor layer 60 and the drain electrodes (180, 22, 280) is a reverse bias of a pn junction. There is no short circuit between the source electrode 16 and the drain electrodes (180, 22, 280) via 60.

  Similarly, when a bias voltage is applied between the source and the drain, the cap conductor layer 60 and the source electrode (160, 20, 260) are in the forward bias of the pn junction, and therefore the cap conductor layer. 60 stabilizes with a potential difference corresponding to the forward voltage drop (Vf) of the pn junction from the source electrode (reference potential). The potential inside the p-type organic semiconductor layer (transistor active layer) 400 is stabilized by the electromagnetic shielding effect of the cap conductor layer 60.

  In the structure of the organic semiconductor light emitting device according to the fifth embodiment of the present invention, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like.

  As the material of the substrate 10, the same material as that of the first to fourth embodiments can be used.

  As the material of the gate electrode 120, the same material as in the first to fourth embodiments can be used.

  As the material of the gate insulating film 15, the same material as in the first to fourth embodiments can be used.

  As the material of the source electrode (160, 20, 260) and the drain electrode (180, 22, 280), the same material as in the third to fourth embodiments can be used.

  For example, the p-type organic semiconductor layer (transistor active layer) 400 may be replaced with an inorganic semiconductor material such as a-Si or polysilicon.

(P-type organic semiconductor materials)
The molecular structure examples of the p-type organic semiconductor material shown in FIGS. 6 to 7 can be similarly applied to the organic semiconductor light emitting device according to the fifth embodiment of the present invention.

(Hole transport material that forms the hole transport layer)
The molecular structure examples of the hole transport material shown in FIGS. 8 to 9 can be similarly applied to the organic semiconductor light emitting device according to the fifth embodiment of the present invention.

(Electron transport material forming the electron transport layer)
The molecular structure examples of the electron transport material shown in FIGS. 10 to 11 can be similarly applied to the organic semiconductor light emitting device according to the fifth embodiment of the present invention.

(Carrier transporting light emitting material, or light emitting dopant and host material)
The light emitting layers 312, 322, 332, 412, 422, and 432 include carrier transporting light emitting materials or light emitting dopants and host materials applied to the organic semiconductor light emitting devices according to the first to fourth embodiments of the present invention. Similar materials can be applied.

  Further, in the semiconductor light emitting device according to the fifth embodiment of the present invention, as shown in FIG. 5, an example in which the organic semiconductor light emitting element portion is configured as a bottom emission type is shown. Alternatively, it can be configured as a boss emission type.

  According to the fifth embodiment of the present invention, in an organic semiconductor light emitting device in which a top contact type organic thin film transistor and a surface light emitting organic semiconductor light emitting element are integrated on the same substrate, holes are injected from the source / drain electrodes. High-performance, high dielectric constant insulating film is used as the gate insulating film of organic thin film transistors, surface modification is easy, organic semiconductor material orientation control is good, and organic thin film transistor characteristics are improved (low voltage drive, high drive) Current) and the flatness of the organic thin-film transistor and the surface-emitting organic semiconductor light-emitting element are maintained, and an organic semiconductor light-emitting device suitable for integration that improves light-emitting characteristics and yield can be provided.

  According to the organic semiconductor light-emitting device of the fifth embodiment of the present invention, the luminance variation of the surface-emitting organic semiconductor light-emitting element, the emission characteristics such as luminance unevenness / color unevenness due to the emission wavelength variation, Yield efficiency can be greatly increased by suppressing a decrease in yield and by multilayering a surface-emitting organic semiconductor light-emitting element and an organic thin-film transistor.

[Other embodiments]
As described above, the present invention has been described according to the first to fifth embodiments. However, the description and the drawings which constitute a part of this disclosure do not limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  The organic semiconductor material applied to the configuration of the organic semiconductor light emitting device according to the first to fifth embodiments of the present invention is, for example, a chemical purification method such as vacuum deposition, column chromatography, recrystallization, sublimation, etc. In the case of a purification method or a polymer material, it can be formed by using a wet film formation method such as spin coating, dip coating, blade coating, or ink jet method.

  In the organic semiconductor light emitting devices according to the first to fourth embodiments of the present invention, the organic thin film transistor discloses an example of a bottom contact type, and the organic semiconductor light emitting device according to the fifth embodiment of the present invention. However, the structure of the organic thin film transistor is not limited to these, and either one of the source electrode / drain electrode is configured as a bottom contact type and the other is configured as a top contact type. You can also.

  Furthermore, in the organic semiconductor light emitting devices according to the first to fifth embodiments of the present invention, the organic thin film transistor has the source electrode / drain electrode arranged in the lateral direction, and current is conducted in the direction substantially parallel to the substrate surface. However, the structure of the organic thin film transistor is not limited to this, and the vertical type in which the source / drain electrodes are arranged vertically and the current is conducted substantially vertically to the substrate surface. You may form in the structure of the electrostatic induction transistor which becomes a structure. The vertical structure can increase the current capacity, and is advantageous compared to the lateral structure.

  Furthermore, in the organic semiconductor light emitting devices according to the first to fifth embodiments of the present invention, an example in which the organic semiconductor light emitting element has a repeating structure of a hole transport layer / light emitting layer / electron transport layer is shown. However, the luminous efficiency is improved by sandwiching a charge generation layer made of a metal or conductor layer between the hole transport layer / light emitting layer / electron transport layer and the hole transport layer / light emitting layer / electron transport layer. You can also.

  As described above, the present invention naturally includes various embodiments that are not described herein. Accordingly, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

  Since the surface-emitting organic semiconductor light-emitting device according to the embodiment of the present invention can realize an integrated structure of a high-performance organic thin-film transistor and a surface-emitting organic semiconductor light-emitting element, the organic integrated circuit field such as organic CMOSFET, organic Light emitting devices, flat panel displays, flexible electronics fields such as organic EL displays for realizing flexible displays, and transparent electronics fields, as well as biosensors such as lighting equipment, organic lasers, solar cells, gas sensors, taste sensors, odor sensors, etc. Applicable in a wide range of fields.

1 is a schematic cross-sectional structure diagram of an organic semiconductor light-emitting device according to a first embodiment of the present invention. The typical cross-section figure of the organic-semiconductor light-emitting device concerning the 2nd Embodiment of this invention. The typical cross-section figure of the organic-semiconductor light-emitting device concerning the 3rd Embodiment of this invention. The typical cross-section figure of the organic-semiconductor light-emitting device concerning the 4th Embodiment of this invention. The typical cross-section figure of the organic-semiconductor light-emitting device concerning the 5th Embodiment of this invention. It is an example of the molecular structure of a p-type organic semiconductor material applicable to the p-type organic semiconductor layer (transistor active layer) 24 of the organic semiconductor light emitting device according to the first to fifth embodiments of the present invention, and (a) Py105 (Me): molecular structure example of 1,6 bis (2- (4-methylphenyl) vinyl) pyrene, (b) molecular structure example of tetracene as acene-based material, (c) pentacene as acene-based material Example of molecular structure, (d) Example of molecular structure of copper phthalocyanine (CuPc) as a phthalocyanine-based material, (e) Example of molecular structure of α-NPD, (f) Example of molecular structure of P-6P, (g) Molecule of DBTBT Example of structure, (h) Example of molecular structure of BV2TVB, (i) Example of molecular structure of BP2T, (j) Example of molecular structure of DHADT. It is an example of a molecular structure of a polymer semiconductor material applicable to the p-type organic semiconductor layer (transistor active layer) 24 of the organic semiconductor light emitting device according to the first to fifth embodiments of the present invention. Example of molecular structure of polythiophene (PT), (b) Example of molecular structure of polyacetylene (PA), (c) Example of molecular structure of polythienylene vinylene (PTV), (d) Molecule of poly-3-hexylthiophene (P3HT) Example of structure, (e) Example of molecular structure of 9,9-dioctylfluorene-bithiophene copolymer (F8T2). It is an example of the molecular structure of the hole transport material forming the hole transport layer of the organic semiconductor light emitting device according to the first to fifth embodiments of the present invention, and (a) an example of the molecular structure of GPD, (b) Example of molecular structure of spiro-TAD, (c) Example of molecular structure of spiro-NPD, (d) Example of molecular structure of oxidized-TPD. It is a molecular structure example of still another hole transport material forming the hole transport layer of the organic semiconductor light emitting device according to the first to fifth embodiments of the present invention, and (a) a molecular structure example of TDAPB, (B) Molecular structure example of MTDATA. It is the molecular structure example of the electron transport material which forms the electron carrying layer of the organic-semiconductor light-emitting device which concerns on the 1st thru | or 5th embodiment of this invention, Comprising: (a) The molecular structure example of t-butyl-PBD, b) Molecular structure example of TAZ, (c) Molecular structure example of silole derivative, (d) Molecular structure example of boron-substituted triaryl compound, (e) Molecular structure example of phenylquinoxaline derivative. First through a molecular structure of another electron-transporting material forming the electron-transporting layer of an organic semiconductor light-emitting device according to a fifth embodiment, (a) Molecular structure of Alq ₃ of the present invention, (b ) Example of molecular structure of BCP, (c) Example of molecular structure of oxadiazole dimer, (d) Example of molecular structure of starburst oxadiazole.

Explanation of symbols

10 ... Substrate 15, 170 ... Gate insulating film 16, 20, 160, 260 ... Metal layer (source electrode)
18, 22, 180, 280 ... metal layer (drain electrode)
DESCRIPTION OF SYMBOLS 30 ... Anode electrode 40 ... Cathode electrode 50 ... Color filter 60 ... Conductor layer 120 ... Gate electrode 311,321,331,411,421,431 ... Hole transport layer 312,322,332,412,422,432 ... Light emission Layer 400 ... p-type organic semiconductor layer (transistor active layer)
413, 323, 333, 413, 423, 433 ... electron transport layer

Claims (10)

A substrate,
A gate electrode disposed on the substrate;
A gate insulating film disposed on the gate electrode;
A source electrode and a drain electrode disposed on the gate insulating film;
An organic semiconductor layer disposed between the source electrode and the drain electrode and on the gate insulating film;
A first hole transport layer disposed on the organic semiconductor layer;
A first light emitting layer disposed on the first hole transport layer;
A first electron transport layer disposed on the first light emitting layer;
A second hole transport layer disposed on the first electron transport layer;
A second light emitting layer disposed on the second hole transport layer;
A second electron transport layer disposed on the second light emitting layer;
An organic thin film transistor comprising: a conductor layer disposed on the second electron transport layer;
In the periphery of the organic thin film transistor,
An anode electrode disposed on the substrate;
A fourth hole transport layer disposed on the anode electrode;
A fourth light emitting layer disposed on the fourth hole transport layer;
A fourth electron transport layer disposed on the fourth light emitting layer;
A fifth hole transport layer disposed on the fourth electron transport layer;
A fifth light emitting layer disposed on the fifth hole transport layer;
A fifth electron transport layer disposed on the fifth light emitting layer;
An organic semiconductor light-emitting device, further comprising: an organic semiconductor light-emitting element having a laminated structure with a cathode electrode disposed on the fifth electron transport layer. A substrate,
A gate electrode disposed on the substrate;
A gate insulating film disposed on the gate electrode;
A source electrode and a drain electrode having a laminated structure of a first metal layer disposed on the gate insulating film and a second metal layer disposed on the first metal layer;
An organic semiconductor layer disposed between the source electrode and the drain electrode and on the gate insulating film;
A first hole transport layer disposed on the organic semiconductor layer;
A first light emitting layer disposed on the first hole transport layer;
A first electron transport layer disposed on the first light emitting layer;
A second hole transport layer disposed on the first electron transport layer;
A second light emitting layer disposed on the second hole transport layer;
A second electron transport layer disposed on the second light emitting layer;
A conductor layer disposed on the second electron transport layer,
An organic thin film transistor having a work function of the first metal layer larger than a work function of the second metal layer;
In the periphery of the organic thin film transistor,
An anode electrode disposed on the substrate;
A fourth hole transport layer disposed on the anode electrode;
A fourth light emitting layer disposed on the fourth hole transport layer;
A fourth electron transport layer disposed on the fourth light emitting layer;
A fifth hole transport layer disposed on the fourth electron transport layer;
A fifth light emitting layer disposed on the fifth hole transport layer;
A fifth electron transport layer disposed on the fifth light emitting layer;
An organic semiconductor light-emitting device, further comprising: an organic semiconductor light-emitting element having a laminated structure with a cathode electrode disposed on the fifth electron transport layer.   3. The organic material according to claim 2, wherein the first metal layer is formed of a molybdenum oxide layer, a mixed layer of a molybdenum oxide layer and a chromium layer, or a stacked structure of a chromium layer and a molybdenum oxide layer. Semiconductor light emitting device. A substrate,
A gate electrode disposed on the substrate;
A first gate insulating film disposed on the gate electrode;
A second gate insulating film disposed on the first gate insulating film;
A source electrode and a drain electrode having a laminated structure of a first metal layer disposed on the second gate insulating film and a second metal layer disposed on the first metal layer;
An organic semiconductor layer disposed between the source electrode and the drain electrode and on the gate insulating film;
A first hole transport layer disposed on the organic semiconductor layer;
A first light emitting layer disposed on the first hole transport layer;
A first electron transport layer disposed on the first light emitting layer;
A second hole transport layer disposed on the first electron transport layer;
A second light emitting layer disposed on the second hole transport layer;
A second electron transport layer disposed on the second light emitting layer;
A conductor layer disposed on the second electron transport layer,
An organic thin film transistor having a work function of the first metal layer larger than a work function of the second metal layer;
In the periphery of the organic thin film transistor,
An anode electrode disposed on the substrate;
A fourth hole transport layer disposed on the anode electrode;
A fourth light emitting layer disposed on the fourth hole transport layer;
A fourth electron transport layer disposed on the fourth light emitting layer;
A fifth hole transport layer disposed on the fourth electron transport layer;
A fifth light emitting layer disposed on the fifth hole transport layer;
A fifth electron transport layer disposed on the fifth light emitting layer;
An organic semiconductor light-emitting device, further comprising: an organic semiconductor light-emitting element having a laminated structure with a cathode electrode disposed on the fifth electron transport layer.   5. The organic material according to claim 4, wherein the first metal layer is formed of a molybdenum oxide layer, a mixed layer of a molybdenum oxide layer and a chromium layer, or a stacked structure of a chromium layer and a molybdenum oxide layer. Semiconductor light emitting device. A substrate,
A gate electrode disposed on the substrate;
A first gate insulating film disposed on the gate electrode;
A second gate insulating film disposed on the first gate insulating film;
A stack of a first metal layer disposed on the second gate insulating film, a second metal layer disposed on the first metal layer, and a third metal layer disposed on the second metal layer. A source electrode and a drain electrode comprising a structure;
An organic semiconductor layer disposed on the second gate insulating film between the source electrode and the drain electrode; a first hole transport layer disposed on the organic semiconductor layer;
A first light emitting layer disposed on the first hole transport layer;
A first electron transport layer disposed on the first light emitting layer;
A second hole transport layer disposed on the first electron transport layer;
A second light emitting layer disposed on the second hole transport layer;
A second electron transport layer disposed on the second light emitting layer;
A conductor layer disposed on the second electron transport layer,
An organic thin film transistor in which a work function of the first metal layer and the third metal layer is larger than a work function of the second metal layer;
In the periphery of the organic thin film transistor,
An anode electrode disposed on the substrate;
A fourth hole transport layer disposed on the anode electrode;
A fourth light emitting layer disposed on the fourth hole transport layer;
A fourth electron transport layer disposed on the fourth light emitting layer;
A fifth hole transport layer disposed on the fourth electron transport layer;
A fifth light emitting layer disposed on the fifth hole transport layer;
A fifth electron transport layer disposed on the fifth light emitting layer;
An organic semiconductor light-emitting device, further comprising: an organic semiconductor light-emitting element having a laminated structure with a cathode electrode disposed on the fifth electron transport layer.   The organic material according to claim 6, wherein the first metal layer is formed of a molybdenum oxide layer, a mixed layer of a molybdenum oxide layer and a chromium layer, or a stacked structure of a chromium layer and a molybdenum oxide layer. Semiconductor light emitting device. A substrate,
A gate electrode disposed on the substrate;
A first gate insulating film disposed on the gate electrode;
A second gate insulating film disposed on the first gate insulating film;
An organic semiconductor layer disposed on the second gate insulating film;
A first metal layer disposed on the organic semiconductor layer; a second metal layer disposed on the first metal layer; and a third metal layer disposed on the second metal layer. A source electrode and a drain electrode having a laminated structure;
A first hole transport layer disposed on the organic semiconductor layer and on the source and drain electrodes;
A first light emitting layer disposed on the first hole transport layer;
A first electron transport layer disposed on the first light emitting layer;
A second hole transport layer disposed on the first electron transport layer;
A second light emitting layer disposed on the second hole transport layer;
A second electron transport layer disposed on the second light emitting layer;
A conductor layer disposed on the second electron transport layer,
An organic thin film transistor in which a work function of the first metal layer and the third metal layer is larger than a work function of the second metal layer;
In the periphery of the organic thin film transistor,
An anode electrode disposed on the substrate;
A fourth hole transport layer disposed on the anode electrode;
A fourth light emitting layer disposed on the fourth hole transport layer;
A fourth electron transport layer disposed on the fourth light emitting layer;
A fifth hole transport layer disposed on the fourth electron transport layer;
A fifth light emitting layer disposed on the fifth hole transport layer;
A fifth electron transport layer disposed on the fifth light emitting layer;
An organic semiconductor light-emitting device, further comprising: an organic semiconductor light-emitting element having a laminated structure with a cathode electrode disposed on the fifth electron transport layer.   The organic material according to claim 8, wherein the first metal layer is formed of a molybdenum oxide layer, a mixed layer of a molybdenum oxide layer and a chromium layer, or a stacked structure of a chromium layer and a molybdenum oxide layer. Semiconductor light emitting device.   The organic semiconductor light-emitting device according to claim 1, wherein the organic semiconductor layer is a p-type organic semiconductor.

Images