JP2009049377A - Mobile body driving system, exposure device, method for exposure, and method for manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To control a position of a mobile body (stage) accurately. <P>SOLUTION: A mobile body driving system includes an alignment station ASS and an exposure station ESS. The alignment station ASS has a first measuring system including a plurality of heads 64, 66 disposed in a predefined positional relationship with a first reference point on a first coordinate system and measuring information on a stage position in basis of a measuring value of the heads 64, 66 oppose to the top surface of the stage (e.g. WST2); and aligns a wafer W2 on the stage. The exposure station ESS has a second measuring system including a plurality of heads 65, 68 disposed in a positional relationship with a second reference point on a second coordinate system, which relationship corresponds to the positional relationship between the heads 64, 66 and the first reference point and measuring information on a stage position in basis of a measuring value of the heads 65, 68 oppose to the top surface of the stage; and performs exposure operation to the wafer on the stage. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a moving body drive system, an exposure apparatus, an exposure method, and a device manufacturing method. More specifically, the present invention relates to a moving body drive system suitable for performing different processes on an object held by the moving body and the moving body. The present invention relates to an exposure apparatus including a driving system, an exposure method for forming a pattern on a sensitive object held by a moving body, and a device manufacturing method using the exposure method.

  In order to mass-produce microdevices (such as electronic devices) such as semiconductor elements and liquid crystal display elements, it is important that exposure apparatuses such as so-called steppers and scanners used in lithography processes have high throughput. Further, these exposure apparatuses have been required to have high resolving power and high overlay accuracy due to the miniaturization of patterns accompanying the high integration of semiconductor elements. For example, in order to realize high overlay accuracy, high-precision position measurement performance and position control performance of a stage that holds a sensitive substrate such as a wafer or a glass plate is required.

  And with the miniaturization of patterns accompanying higher integration of semiconductor elements, more precise stage position controllability is required, and now measurements due to temperature fluctuations in the atmosphere on the beam path of laser interferometers are required. Short-term fluctuations in values are no longer negligible.

  On the other hand, there is an encoder as a measuring device that is excellent in short-term stability of measurement compared to a laser interferometer and can be used for stage position measurement. The measurement resolution of a conventional encoder is inferior to that of an interferometer, but recently, an encoder having a measurement resolution equal to or higher than that of a laser interferometer has been proposed (for example, see Patent Document 1). . Therefore, an encoder has been attracting attention as a stage position measurement device, and an exposure apparatus employing such an encoder has been developed.

  On the other hand, an off-axis alignment system is used as an alignment detection system for detecting alignment marks on the wafer, the alignment system is arranged away from the projection optical system, and the wafer held on different stages at different locations. There has also been proposed a twin-stage type exposure apparatus that improves the throughput by performing alignment and exposure simultaneously in parallel (for example, see Patent Documents 2, 3, and 4).

  It is desirable that this twin stage type exposure apparatus also employs an encoder to improve the position measurement accuracy of the stage holding the wafer and to improve the overlay accuracy.

JP 2005-308592 A Japanese Patent Laid-Open No. 10-163099 JP 10-214783 A JP 2000-505958 A

  The present invention has been made under the circumstances described above. From a first viewpoint, the present invention is a moving body that holds and moves an object; a first on a first coordinate system that defines the movement of the moving body; A plurality of first heads arranged in a predetermined positional relationship with respect to a reference point, and position information of the moving body in a predetermined direction is measured based on a measurement value of the first head facing the upper surface of the moving body. A first station for performing a first process on an object on the moving body; and a second reference point on a second coordinate system defining movement of the moving body A plurality of second heads arranged in a positional relationship corresponding to the positional relationship of the plurality of first heads with respect to the first reference point, and a measurement value of the second head facing the upper surface of the moving body. Measuring position information of the moving body in the predetermined direction based on the first Measurement system is provided, the second processing to the object on the movable body is a first movable body drive system comprising a second station to be performed.

  According to this, the positional relationship of the plurality of first heads with respect to the first reference point on the first coordinate system and the positional relationship of the plurality of second heads with respect to the second reference point on the second coordinate system correspond to each other. Therefore, in the first station, when the moving body is in a certain positional relationship (the first positional relationship) with respect to the first reference point on the first coordinate system, In a predetermined area on the upper surface of the moving body facing one head, the second measuring system is in the second station when the moving body is in the first positional relationship with respect to the second reference point on the second coordinate system. A second head corresponding to the first head is opposed. Therefore, the first head of the first measurement system that measures the position information of the moving body in the predetermined direction at the first station even if there is a measurement error factor such as unevenness or deformation over time in a predetermined area on the upper surface of the moving body. And the error generated in the measurement value of the second head of the second measurement system that measures the positional information of the moving body in the predetermined direction at the second station are substantially the same (the first head and the second head). Individual differences (including calibration errors) may remain). Therefore, based on the position information of the moving body measured by the first measurement system in the first station, the measurement area on the upper surface of the moving body facing the first and second heads is not affected by the measurement error factor. It is possible to accurately manage the position of the moving body using the second measurement system in the station.

  According to a second aspect of the present invention, there is provided a moving body that moves while holding an object; the moving body is in a predetermined positional relationship with respect to a first reference point on a first coordinate system that defines the movement. A first measurement system that measures position information of the movable body in a predetermined direction by a first head that is opposed to a partial region of the upper surface of the movable body and has a fixed positional relationship with respect to the first reference point; A first station where a first process is performed on an object on the moving body; and the predetermined positional relationship with respect to the second reference point on a second coordinate system defining the movement of the moving body. In some cases, the second reference point is in the same positional relationship as the first head with respect to the first reference point, and is opposed to the same region of the upper surface of the moving body as the region facing the first head. The position information of the movable body in a predetermined direction is obtained by two heads. A second movable body drive system comprising: a second measuring system for measuring the second processing to the object on the movable body and the second station is performed.

  According to this, in the first station, when the moving body is in a predetermined positional relationship (the first positional relationship) with respect to the first reference point on the first coordinate system, a partial region on the upper surface of the moving body. Position information of the moving body in a predetermined direction is measured by the first head of the first measurement system that faces the head. Further, in the second station, when the moving body has the first positional relationship with respect to the second reference point on the second coordinate system, the second head is the same as the first head with respect to the first reference point. Position information of the moving body in a predetermined direction is measured by the second head of the second measurement system that is in a positional relationship and faces the same area of the upper surface of the moving body as the area facing the first head. Accordingly, even if there is a measurement error factor such as unevenness or deformation over time in a partial area on the upper surface of the moving body, the first measurement system of the first measurement system that measures position information of the moving body in a predetermined direction at the first station. The error that occurs in the measurement value of the head is almost the same as the error that occurs in the measurement value of the second head of the second measurement system that measures the positional information of the moving body in the predetermined direction at the second station (the first head and the second head). And individual differences (including calibration errors) may remain). Therefore, based on the position information of the moving body measured by the first measurement system in the first station, the measurement area on the upper surface of the moving body facing the first and second heads is not affected by the measurement error factor. It is possible to accurately manage the position of the moving body using the second measurement system in the station.

  According to a third aspect of the present invention, there is provided an exposure apparatus for exposing a sensitive object with an energy beam to form a pattern on the sensitive object, wherein the sensitive object is held on the movable body. One of the first and second movable body drive systems of the invention; a mark detection system that is disposed in the vicinity of the first reference point of the first station and detects a mark formed on the sensitive object; And an optical system that projects the energy beam onto the sensitive object, the mark detection operation using the mark detection system being performed in the first station. The second station is a first exposure apparatus that performs an exposure operation for exposing the sensitive object through the optical system with the energy beam.

  According to this, in the first station, a mark detection operation using a mark detection system is performed, and in the second station, an exposure operation for exposing a sensitive object via an optical system by an energy beam is performed. In this case, based on the position information of the mobile body measured by the first measurement system at the first station, the second measurement system is installed at the second station by either the first or second mobile body drive system of the present invention. It is possible to manage the position of the moving body with high accuracy. Therefore, in the first station, the mark detection operation using the mark detection system and the mark position information obtained from the position information of the moving body measured by the first measurement system during the mark detection operation are performed in the second station. By controlling the position of the moving body using the two measurement system, it becomes possible to perform highly accurate exposure.

  According to a fourth aspect of the present invention, there is provided an exposure apparatus for exposing a sensitive object with an energy beam to form a pattern on the sensitive object, wherein the scale has a diffraction grating while holding the sensitive object. A movable body provided; a first measurement system in which the scale is moved relative to the first head unit by movement of the movable body; and a first station that performs a measurement operation of the sensitive object; and the movable body A second measuring system in which the scale is moved relative to the second head unit by the movement of the second head unit, and a second station that performs an exposure operation of the photosensitive object, wherein the first and second head units are: At least a part of the area on the scale that is irradiated with the measurement beam when substantially the same location on the sensitive object is to be measured and exposed A second exposure device provided in so that.

  According to a fifth aspect of the present invention, there is provided an exposure method for exposing a sensitive object with an energy beam to form a pattern on the sensitive object, wherein the scale has a diffraction grating while holding the sensitive object. The movable body to be provided is arranged in the first station, the sensitive object is measured while measuring the position information of the movable body with the first measurement system, and the movable body is moved from the first station to the second station. Then, the sensitive object is exposed while measuring the position information of the moving body with the second measurement system, and the first measurement is performed when substantially the same location on the sensitive object is set as the measurement object and the exposure object. In the exposure method, the area on the scale irradiated with the measurement beam by the system and the second measurement system overlaps at least partially.

  From a sixth aspect, the present invention is a device manufacturing method including exposing a sensitive object using the exposure method of the present invention and developing the exposed sensitive object.

<< First Embodiment >>
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, a first embodiment of the invention will be described with reference to FIGS. FIG. 1 schematically shows a configuration of an exposure apparatus 10 according to the first embodiment.

  The exposure apparatus 10 moves a plurality of circuit patterns formed on the reticle R on the wafer W1 (or W2) via the projection optical system PL while synchronously moving the reticle R and the wafer W1 (or W2) in the one-dimensional direction. A step-and-scan projection exposure apparatus, that is, a so-called scanning stepper (also called a scanner). In the following, the direction parallel to the optical axis AX of the projection optical system PL is the Z-axis direction, and the direction orthogonal to the paper surface in FIG. 1 in which the reticle R and the wafer W1 (or W2) are relatively scanned in a plane perpendicular to the Z-axis direction. In the following description, the Y axis direction, the Z axis, and the direction perpendicular to the Y axis are defined as the X axis direction, and the rotation (tilt) directions around the Y axis, the X axis, and the Z axis are defined as the θx, θy, and θz directions, respectively.

  The exposure apparatus 10 projects an illumination system 12 that illuminates the reticle R with illumination light IL, a reticle stage RST on which the reticle R is mounted, and an illumination light IL that is emitted from the reticle R onto the wafer W1 (or W2). An optical system PL, a stage device 20 including wafer stages WST1 and WST2 on which wafers W1 and W2 are respectively mounted, an alignment system ALG, and a main controller 50 that performs overall control of the entire device are provided. In the present embodiment, an alignment station ASS is configured that performs alignment processing on wafers on wafer stages WST1 and WST2 with alignment system ALG as the center, and on wafers on wafer stages WST1 and WST2 with projection optical system PL as the center. An exposure station ESS that performs exposure processing is configured.

  The illumination system 12 includes a light source and an illumination optical system, and irradiates the illumination light IL to a rectangular or arcuate illumination area IAR defined by a field stop (also called a massing blade or a reticle blind) disposed therein. The reticle R on which the circuit pattern is formed is illuminated with uniform illuminance. An illumination system similar to the illumination system 12 is disclosed in, for example, Japanese Patent Application Laid-Open No. 2001-313250 (corresponding US Patent Application Publication No. 2003/0025890). Here, as the illumination light IL, for example, ArF excimer laser light (wavelength 193 nm) is used.

  On reticle stage RST, reticle R is fixed, for example, by vacuum suction. Reticle stage RST can be slightly driven by reticle stage drive system 22 in the Y-axis direction, X-axis direction, and θz direction, and in a predetermined scanning direction (Y-axis direction) along the upper surface of a reticle stage base (not shown). It is possible to drive at the scanning speed specified in. The reticle stage drive system 22 is a mechanism using a linear motor, a voice coil motor or the like as a drive source, but is shown as a simple block in FIG. 1 for convenience of illustration. The reticle stage RST includes a coarse movement stage that is driven one-dimensionally in the Y-axis direction, and the reticle R in at least three degrees of freedom (Y-axis direction, X-axis direction, and θz direction) with respect to the coarse movement stage. Of course, a coarse and finely movable stage having a finely movable stage capable of being finely driven may be employed.

  The position in the XY plane of the reticle stage RST (including the position in the θz direction (θz rotation amount)) is formed at the end of the reticle stage RST by a reticle laser interferometer (hereinafter referred to as “reticle interferometer”) 16. It is always detected with a resolution of, for example, about 0.15 nm through the (or provided) reflecting surface. Position information (including rotation information such as the θz rotation amount (yaw amount)) of reticle stage RST from reticle interferometer 16 is supplied to main controller 50. Main controller 50 drives reticle stage RST via reticle stage drive system 22 based on the position information of reticle stage RST.

  As projection optical system PL, a refractive optical system including a plurality of lenses (lens elements) arranged along optical axis AX parallel to the Z-axis direction is used. The projection optical system PL is, for example, telecentric on both sides and has a predetermined projection magnification β (β is, for example, 1/4 or 1/5). For this reason, when the illumination light IL is irradiated onto the reticle R from the illumination system 12, the imaging light flux from the portion illuminated by the illumination light IL in the circuit pattern region formed on the reticle R is projected into the projection optical system PL. The image (partial inverted image) of the circuit pattern in the irradiation area of the illumination light IL (the above-described illumination area IAR) is a slit shape elongated in the X-axis direction at the center of the field on the image plane side of the projection optical system PL. The image is limited (or rectangular (polygonal)). As a result, the partially inverted image of the projected circuit pattern is reduced and transferred to the resist layer on the surface of one shot area of the plurality of shot areas on the wafer W1 or W2 arranged on the imaging plane of the projection optical system PL. Is done.

  The alignment system ALG is an off-axis alignment system, and is installed on the −X side of the projection optical system PL at a position away from the optical axis AX of the projection optical system PL by a predetermined distance.

  In this embodiment, an FIA (Field Image Alignment) system, which is a kind of image processing type alignment sensor, is used as the alignment system ALG. The alignment system ALG includes a light source (for example, a halogen lamp) and an imaging optical system, an index plate on which an index serving as a detection reference is formed, an image sensor (CCD), and the like. In this alignment system ALG, the position of the mark (the amount of misalignment of the mark with respect to the center of the index) is measured based on the center of the index that is the detection reference point.

  In this embodiment, alignment system ALG is formed on alignment marks on the wafer held on wafer stages WST1 and WST2 and on reference mark plates FM1 and FM2 (see FIG. 2) on wafer stages WST1 and WST2. This is used for measuring the position (XY coordinate value) of the first reference mark.

  The stage apparatus 20 includes a stage base SB disposed below the projection optical system PL in FIG. 1, wafer stages WST1 and WST2 that move independently in the XY plane above the stage base SB, and wafer stages WST1 and WST2. A wafer stage drive system for driving and a measurement system for measuring the positions of wafer stages WST1 and WST2 are provided.

  The stage base SB is formed of a rectangular plate-shaped surface plate (see FIG. 2), and a plurality of (for example, three) vibration isolation units 91 on the floor surface F (however, the vibration isolation units on the back side in FIG. 1 are not used). And is supported substantially horizontally (parallel to the XY plane). In this case, the fine vibration (dark vibration) transmitted from the floor surface F to the stage base SB is effectively insulated by the plurality of vibration isolation units 91. As each vibration isolation unit 91, a so-called active vibration isolation device that actively suppresses the stage base SB based on the output of the vibration sensor can be used.

FIG. 2 schematically shows the stage apparatus 20 (except for the measurement system) in a plan view. In FIG. 2, the projection optical system PL and the alignment system ALG are shown together with a two-dot chain line (virtual line). As shown in FIG. 2, a pair of X-axis linear guides 83X ₁ and 83X ₂ extend in the X-axis direction at a predetermined interval in the Y-axis direction on the upper surface of the stage surface plate SB.

X-axis linear guides 83X _1, the 83X _2, X-axis linear guides 83X ₁ and 83X respectively constituting the X linear motor of the moving magnet type or the moving coil type with each of the _two, each pair of X-axis slider 84X _1, 85X ₁ , 84X ₂ , and 85X ₂ are engaged with each other in a non-contact manner through a static gas bearing (not shown). Hereinafter, the respective X linear motor, with each of the X-axis slider 84X ₁ constituting the _{mover, 85X 1, 84X 2, 85X} 2 same reference numerals and, as appropriate, X linear motors 84X _1, 85X _1, 84X ₂ and 85X ₂ shall be called.

The X-axis sliders 84X ₁ and 84X ₂ are respectively fixed to one end and the other end in the longitudinal direction of the Y-axis linear guide 72Y extending in the Y-axis direction. Similarly, the X-axis sliders 85X ₁ and 85X ₂ are fixed to one end and the other end of the Y-axis linear guide 74Y extending in the Y-axis direction, respectively.

  In the Y-axis linear guides 72Y and 74Y, Y-axis sliders 73Y and 75Y each having a rectangular cross-sectional shape surround the four surfaces (upper and lower surfaces and both side surfaces), respectively, and a static gas pressure (not shown) It is provided in a non-contact manner via a bearing. Each of the Y-axis sliders 73Y and 75Y and the Y-axis linear guides 72Y and 74Y provided in a non-contact manner with each other constitute a moving magnet type or moving coil type Y linear motor. Hereinafter, these Y linear motors are also referred to as Y linear motors 73Y and 75Y using the same reference numerals as those of the Y-axis slider that is the movable element.

On the side surface on the + X side of the Y-axis slider 73Y and the side surface on the −X side of the Y-axis slider 75Y, fork portions 67 ₁ and 67 ₂ including a stator group extending in the X-axis direction via an attachment member (not shown) Each is fixed in a cantilevered state.

More specifically, the fork portions 67 _{1 and} 67 ₂ each include a guide bar in addition to the stator group. As an example, the stator group includes a Y-axis stator, three X-axis stators, and two Z-axis stators each having an armature coil. Of the three X-axis stators, the two X-axis stators are vertically arranged apart from each other in the Z-axis direction at the same Y position (position in the Y-axis direction). These two X-axis stators and the remaining X-axis stators are arranged apart from each other in the Y-axis direction. The two Z-axis stators are arranged away from each other in the Y-axis direction.

Wafer stages WST1 and WST2 each include a wafer stage body having a substantially T-shaped YZ cross section, and a mover group fixed integrally with the wafer stage body in a predetermined positional relationship. It has the shape of The mover group includes a Y-axis mover, three X-axis movers, and two Z-axis movers corresponding to the above-described stator group. Each of these movers is provided inside a through-hole opening formed in each wafer stage body, and a corresponding stator is inserted into each opening, and each mover is associated with a corresponding stator. Thus, a moving magnet type linear motor or a voice coil motor is configured. In this case, three X linear motors, two Z-axis voice coil motors, and one Y-axis voice coil motor are configured. With these six motors, wafer stage WST1 and WST2 have six degrees of freedom in the X-axis direction, Y-axis direction, Z-axis direction, θx direction, θy direction, and θz direction with respect to fork portion 67 ₁ or 67 ₂ . It can be driven in the direction. The stage body is formed with a through-hole into which the guide bar is inserted without contact. Each guide bar is composed of a prismatic member whose one end in the longitudinal direction is connected to the mounting member, and a plurality of capacitance sensors (sensor groups) are embedded in the vicinity of the other end (tip) in the longitudinal direction. ing. With this sensor group, it is possible to measure the relative positions of the wafer stages WST1 and WST2 and the fork portions 67 ₁ or 67 ₂ in the direction of five degrees of freedom excluding the X-axis direction.

The configuration of the fork portions 67 ₁ and 67 ₂ and the wafer stage corresponding to these fork portions is disclosed in detail in, for example, Japanese Patent Application Laid-Open No. 2003-196949.

As described above, in this embodiment, the wafer stage WST1 or WST2 can be driven in the X-axis direction with respect to the fork portion 67 ₁ or 67 ₂ by the driving force generated by the three X linear motors. For example, at the time of stepping between shots, these X linear motors are used for fine driving of wafer stage WST1 in the X-axis direction. For coarse movement of wafer stages WST1 and WST2 in the X-axis direction, the above-mentioned X linear motor is used. Linear motors 84X ₁ and 84X ₂ are used.

In the present embodiment, the above-described X linear motors 84X ₁ , 84X ₂ , 85X ₁ , 85X ₂ , Y linear motors 73Y, 75Y, and stator groups of fork portions 67 ₁ , 67 ₂ and wafer stages WST1, WST2 are movable. Wafer stage drive system 80 (see FIG. 4) for driving wafer stages WST1 and WST2 is constituted by two 6-degree-of-freedom drive mechanisms constituted by the child groups.

On the upper surface (surface on the + Z side) of wafer stage WST2, as shown in FIG. 3, Y scale 39Y ₁ in which a lattice having a predetermined pitch with the Y axis direction as a periodic direction is formed at both ends in the X axis direction. , 39Y ₂ are provided. Y scales 39Y ₁ and 39Y ₂ are arranged symmetrically with respect to a straight line parallel to the Y axis passing through the center of wafer stage WST2, and the lattice lines forming the respective lattices are also formed in an almost symmetrical arrangement with respect to the straight line. ing.

In addition, on the upper surface of wafer stage WST2, an X scale is formed with a grating having a predetermined pitch with the X axis direction as a periodic direction, sandwiched between Y scales 39Y ₁ and 39Y ₂ at both ends in the Y axis direction. 39X ₁ and 39X ₂ are provided. X scales 39X ₁ and 39X ₂ are arranged symmetrically with respect to a straight line that passes through the center of wafer stage WST2 and is parallel to the X axis, and the lattice lines forming the respective lattices are also formed in an almost symmetrical arrangement with respect to the straight line. ing.

Further, in the central region surrounded by Y scales 39Y ₁ and 39Y ₂ and X scales 39X ₁ and 39X ₂ on the upper surface of wafer stage WST2, the center thereof is not shown in the state of being substantially coincident with the center of wafer stage WST2. The wafer W2 is sucked and held by the wafer holder.

Wafer stage WST1 is formed of the same material and the same size and shape as wafer stage WST2. As shown in FIG. 3, Y scales 39Y ₃ and 39Y ₄ and X scales 39X ₃ and 39X are arranged on the upper surface (+ Z side surface) of wafer stage WST1 in the same arrangement as the four scales on wafer stage WST2. ₄ is provided. Further, in the central region surrounded by the Y scales 39Y ₃ and 39Y ₄ and the X scales 39X ₃ and 39X ₄ on the upper surface of the wafer stage WST1, the center thereof substantially coincides with the center of the wafer stage WST1 (not shown). The wafer W1 is sucked and held by the wafer holder.

  As shown in FIG. 2, fiducial mark plates FM1 and FM2 are fixed to the upper surfaces of wafer stages WST1 and WST2 at the same positional relationship with respect to the respective centers. Although not shown, the first reference mark and the pair of second reference marks are formed on the surfaces of the reference mark plates FM1 and FM2, respectively, with the same positional relationship.

  Corresponding to the eight scales described above, in this embodiment, as shown in FIGS. 1 and 3, eight head units are provided on a plane parallel to the XY plane that substantially coincides with the lower end surface of the projection optical system PL. 62A to 62H are arranged. The head units 62A to 62D are actually fixed in a suspended state to a main frame that holds the alignment system ALG and the projection unit PU via a support member.

  The head units 62A and 62C are arranged symmetrically with respect to the detection center of the alignment system ALG with the Y-axis direction as the longitudinal direction on the −Y side and + Y side of the alignment system ALG, respectively. The head units 62B and 62D are arranged symmetrically with respect to the detection center of the alignment system ALG with the X-axis direction as the longitudinal direction on the −X side and + X side of the alignment system ALG. That is, the head units 62A to 62D are arranged in a cross shape with the detection center of the alignment system ALG as the center.

As shown in FIG. 3, the head units 62A and 62C are a plurality (five here) of five units arranged at predetermined intervals on a straight line (reference axis) LV1 parallel to the Y axis passing through the detection center of the alignment system ALG. An X head 64 is provided. The head unit 62A uses the above-described X scale 39X ₁ or 39X ₃ to measure the position (X position) of the wafer stage WST2 or WST1 in the X-axis direction (here, five eyes) X linear encoder ( Hereinafter, 70A (refer to FIG. 4) is configured as abbreviated as “X encoder” or “encoder” as appropriate. Similarly, the head unit 62C uses the above-described X scale 39X ₂ or 39X ₄ to measure the X position of the wafer stage WST2 or WST1, and is a multi-lens (here, 5 eyes) X linear encoder 70C (see FIG. 4). ).

As shown in FIG. 3, the head units 62B and 62D are symmetrical with respect to the reference axis LV1 and pass through the optical axis AX of the projection optical system PL and the detection center of the alignment system ALG and are parallel to the X axis (reference axis). ) A plurality of (here, five) Y heads 66 arranged at predetermined intervals on the LH are provided. The head unit 62B uses the above-described Y scale 39Y ₁ or 39Y ₃ to measure the Y position of the wafer stage WST2 or WST1, and is a multi-lens (here, 5 eyes) Y linear encoder (hereinafter referred to as “Y encoder” as appropriate). Or 70B (refer to FIG. 4). The head unit 62B includes a plurality of (here, 5 each) arranged at predetermined intervals along two straight lines parallel to the reference axis LH, which are located on one side and the other side across the reference axis LH. 10 (total 10) Z sensor heads (hereinafter referred to as Z heads) 71 _{i, j} (i = 1, 2, j = 1, 2,..., 5). In this case, the Z heads 71 _{1, j} and 71 _{2, j} forming a pair are arranged symmetrically with respect to the reference axis LH and sandwiching the Y head 66 therebetween. Each Z head 71 _{i, j} irradiates wafer stage WST2 or WST1 from above, receives the reflected light, and measures position information in the Z-axis direction of the wafer stage surface at the light irradiation point. An optical displacement sensor (an optical pickup type sensor) having a configuration like an optical pickup used in a sensor, for example, a CD drive device or the like is used.

The head unit 62D measures the Y position of the wafer stage WST2 or WST1 using the Y scale 39Y ₂ or 39Y ₄ described above, and is a multi-lens (here, five eyes) Y linear encoder 70D (for example, diffraction interference type). (See FIG. 4). The head unit 62D includes five pairs of Z heads 77 _{i, j} (i = 1, 2, j = 1, 2) arranged symmetrically with respect to the five pairs of Z heads 71 _{i, j} described above with respect to the reference axis LV1. , ..., 5). In this case, the paired Z heads 77 _{1, j} and 77 _{2, j} are arranged symmetrically with respect to the reference axis LH and sandwiching the Y head 66 therebetween. As each Z head 77 _{i, j} , the above-described optical pickup type sensor is used.

  In this embodiment, as the X head 64 and the Y head 66, for example, diffraction interference type encoder heads are used, and diffraction interference type linear encoders 70A to 70D are configured by the heads belonging to the head units 62A to 62D. .

  In the present embodiment, the detection center of the alignment system ALG that regulates the movement of the wafer stages WST1 and WST2 in the XY plane by the X heads of the head units 62A and 62C and the Y heads of the head units 62B and 62D. A two-dimensional coordinate system (hereinafter referred to as a first coordinate system) is set as the origin. Further, the head units 62A to 62D constitute a first measurement system that measures positional information of the wafer stages WST1 and WST2 using the X head, the Y head, and the Z head at the alignment station ASS described above.

  The head units 62E to 62H are provided in such an arrangement that the positional relationship is the same as the positional relationship of the head units 62A to 62D with respect to the detection center of the alignment system ALG with respect to the optical axis AX of the projection optical system PL. . That is, the head units 62E to 62H are arranged in a cross shape around the optical axis AX of the projection optical system PL.

As shown in FIG. 3, the head units 62E and 62G are configured in the same manner as the head units 62A and 62C, respectively. That is, the head units 62E and 62G include a plurality (here, five) of X heads 65 arranged at predetermined intervals on a straight line (reference axis) LV2 parallel to the Y axis passing through the optical axis AX of the projection optical system PL. Each has. The head unit 62E constitutes a multi-lens (here, 5 eyes) X encoder 70E (see FIG. 4) that measures the X position of the wafer stage WST1 or WST2 using the X scale 39X ₃ or 39X ₁ described above. . Similarly, the head unit 62G uses the above-described X scale 39X ₄ or 39X ₂ to measure the X position of the wafer stage WST1 or WST2, and a multi-lens (here, 5 eyes) X linear encoder 70G (see FIG. 4). ).

As shown in FIG. 3, the head units 62F and 62H are configured in the same manner as the head units 62B and 62D described above. Each of the head units 62F and 62H includes a plurality of (here, five) Y heads 68 arranged at a predetermined interval on the reference axis LH. The head unit 62F constitutes a multi-lens (here, 5 eyes) Y encoder 70F (see FIG. 4) that measures the Y position of the wafer stage WST1 or WST2 using the Y scale 39Y ₃ or 39Y ₁ described above. . The head unit 62F includes five pairs of Z heads 79 _{i, j} (i = 1, 2, j = 1, 2,..., 5) composed of optical pickup type sensors.

The head unit 62H constitutes a multi-lens (here, 5 eyes) Y encoder 70H (see FIG. 4) that measures the Y position of the wafer stage WST1 or WST2 using the Y scale 39Y ₄ or 39Y ₂ described above. To do. The head unit 62H includes five pairs of Z heads 81 _{i, j} (i = 1, 2, j = 1, 2,..., 5) composed of optical pickup type sensors.

  In this embodiment, as the X head 65 and the Y head 68, the same diffraction interference type encoder heads as described above are used, and the diffraction interference type linear encoders 70E to 70H are constituted by the heads belonging to the head units 62E to 62H. Has been.

  In the present embodiment, the optical axis of the projection optical system PL that defines the movement of the wafer stages WST1 and WST2 in the XY plane by the X heads of the head units 62E and 62G and the Y heads of the head units 62F and 62H. A two-dimensional coordinate system (hereinafter also referred to as a second coordinate system) having AX as the origin is configured. Further, the head units 62E to 62H constitute a second measurement system that measures the positional information of the wafer stages WST1 and WST2 using the X head, the Y head, and the Z head at the exposure station ESS described above.

The eight linear encoders 70 </ b> A to 70 </ b> H described above measure position information in the respective measurement directions of the wafer stage WST <b> 1 or WST <b> 2 with a resolution of about 0.5 to 1 nm, for example, and supply these measurement values to the main controller 50. Is done. Main controller 50 controls the position of wafer stage WST1 or WST2 in the XY plane based on the measurement values of linear encoders 70A to 70H. The measured values of the Z heads 71 _{i, j} , 77 _{i, j} , 79 _{i, j} , 81 _{i, j} are supplied to the main controller 50.

In this embodiment, the distance between the adjacent Y heads (66 or 68) and Z heads (71, 77, 79, or 81) (measurement beams) included in the head units 62B, 62D, 62F, and 62H is as described above. The Y scales 39Y ₁ , 39Y ₂ , 39Y ₃ , 39Y ₄ are set to be narrower than the width in the X-axis direction. Therefore, when the wafer stage WST1 (or WST2) is driven in the X-axis direction, the Y head that measures the Y position of the wafer stage WST1 (or WST2) and the Z position of the surface of the wafer stage WST1 (or WST2) are detected. The Z head is sequentially switched to the adjacent Y head 66 and Z heads 71 and 77, and the measured value is taken over before and after the switching. That is, the Y head and Z head are connected in this way.

In addition, the distance between adjacent X heads (64 or 65) (measurement beams) included in the head units 62A, 62C, 62E, and 62G is the Y-axis direction of the aforementioned X scales 39X ₁ , 39X ₂ , 39X ₃ , and 39X _4. It is set narrower than the width of. For this reason, the X head is connected in the same manner as described above.

Further, as can be seen from FIGS. 1 and 3, in the present embodiment, when the wafer stages WST1 and WST2 are replaced with an exposure position below the projection optical system PL and an alignment position below the alignment system ALG, Using encoders 70A-70H, the positions of wafer stages WST1, WST2 cannot be managed. Therefore, when the positions of wafer stages WST1 and WST2 cannot be managed using encoders 70A to 70H, such as during the replacement, interferometer system 60 (FIG. 4) measures the positions of wafer stages WST1 and WST2. Reference) is provided. This interferometer system 60, for example a slider 84X _1, and / or X interferometer and the Y interferometer that measures the Y position of the slider 73Y for measuring the X position of 84X _2, and X sliders 85X ₁ and / or 85X ₂ An X interferometer that measures the position and a Y interferometer that measures the Y position of the slider 75Y are included.

  Further, the exposure apparatus 10 is disclosed in the vicinity of the alignment system ALG, for example, in Japanese Patent Application Laid-Open No. 6-283403 (corresponding US Pat. No. 5,448,332), which includes an irradiation system and a light receiving system. An oblique incidence type multi-point focal position detection system (hereinafter abbreviated as “multi-point AF system”) 90 (see FIG. 4) having the same configuration as that described above is provided. In this embodiment, as an example, as shown in FIGS. 1 and 3, the multipoint AF system 90 is an irradiation system arranged in a state of facing each other in a 45-degree oblique direction across the detection center of the alignment system ALG. 90a and a light receiving system 90b.

  The plurality of detection points of the multi-point AF system 90 are arranged on the matrix at predetermined intervals within a measurement range similar to the exposure field with the detection center of the alignment system ALG as the center.

  Further, in the present embodiment, although not shown, a pair of second reference marks on the reference mark plates FM1 and FM2 on the wafer stages WST1 and WST2 are provided above the reticle R via the projection optical system PL. A TTR (Through The Reticle) type reticle alignment system 14 (see FIG. 4) using light having an exposure wavelength for simultaneously observing the reticle marks on the pair of reticles R corresponding thereto is provided. The detection signal of the reticle alignment system 14 is supplied to the main controller 50. As the reticle alignment system 14, for example, a configuration disclosed in Japanese Patent Laid-Open No. 7-176468 can be employed.

  FIG. 4 shows the main configuration of the control system of the exposure apparatus 10. This control system is mainly configured of a main control device 50 composed of a microcomputer (or a workstation) that performs overall control of the entire apparatus.

  Next, a series of operations including a parallel processing operation such as an exposure operation for the wafer on one wafer stage and an alignment operation for the wafer on the other wafer stage, which is performed by the exposure apparatus 10 of the present embodiment, This will be described with reference to FIGS.

  FIG. 5A shows a state immediately after the wafer alignment operation is started on wafer W2 on wafer stage WST2 in parallel with the start of the exposure operation on wafer W1 on wafer stage WST1. It is shown.

  Prior to this FIG. 5A, when wafer stage WST2 is in a predetermined loading position, an exposed wafer placed on wafer stage WST2 from wafer stage WST2 by wafer loader (not shown) is transferred from wafer stage WST2. Unloading and loading of a new wafer W2 onto wafer stage WST2 (that is, wafer exchange) is performed.

  Next, main controller 50 detects position information of alignment marks (sample marks) attached to a plurality of specific shot areas (sample shot areas) on wafer W2, but prior to this, wafer stage In parallel with detecting the position information of the first reference mark on the reference mark plate FM2 on WST2, the Z position of the surface of the reference mark plate FM2 is detected using a multipoint AF system. The main controller 20 sets the Z position of the surface of the reference mark plate FM2 detected here as a reference plane position for focus mapping described later.

The main control device 50 includes two X heads facing the X scales 39X ₁ , 39X ₂ and the Y scales 39Y ₁ , 39Y ₂ , among the plurality of heads of the head units 62A, 62C, 62B, 62D. And the alignment system ALG is used to manage the position of the wafer stage WST2 in the XY plane based on at least three of the measurement values of the two Y heads, that is, the measurement values of the four encoders 70A to 70D. Position information of alignment marks (sample marks) attached to a plurality of specific shot areas (sample shot areas) on W2 is detected (see FIG. 5B). However, in the present embodiment, wafer stage WST2 is moved in a predetermined order using all shot areas as sample shot areas. In the present embodiment, the main controller 50 uses the multipoint AF system 90 to detect the position information of each alignment mark (sample mark) and during the movement of the wafer stage WST before and after the position information. Detection of position information (surface position information) in the Z-axis direction, that is, focus mapping is performed. Upon the focus mapping, the main controller 50, Z heads _{71 1, j, 71 2,} j and _{77 1, (6-j)} , 77 2, (6-j) and the multipoint AF system (90a, 90b) And the wafer stage WST2 surface (Y scale 39Y ₁ , 39Y _{2 )} measured by Z heads 71 _{1, j} , 712 _{, j} and 77 _{1, (6-j)} , 77 _{2, (6-j)} Position information (surface position information) regarding the Z-axis direction of the surface), position information (surface position information) regarding the Z-axis direction of the surface of the wafer W2 at a plurality of detection points detected by the multipoint AF system (90a, 90b), and , And the three surface position information and the measured values of the Y linear encoders 70B and 70D at the time of each sampling are sequentially stored in a memory (not shown) in association with each other.

  FIG. 6A shows a state when the last shot area alignment (detection of alignment mark position information) and focus mapping are completed in this way.

  Next, main controller 50 determines, based on the detection result of the above-described sample mark position information and the design position coordinates of the sample shot area, for example, at least two disclosed in Japanese Patent Application Laid-Open No. 61-44429. Arrangement coordinates of all shot areas on the wafer W2 are obtained by statistical calculation using multiplication. Then, main controller 50 converts the previously obtained arrangement coordinates of all shot areas on wafer W2 into position coordinates having the position of the first reference mark as the origin. In addition, main controller 50 measures the surface position information for each detection point of the multipoint AF system (90a, 90b) captured at the time of the focus mapping by the two pairs of Z heads captured at the same time. Converted into surface position data based on a straight line connecting the surface positions.

More specifically, the main controller 50 determines the region (Y scale 39Y ₂₎ near the −X side end of the plate 28 based on the average value of the measured values of the Z heads 71 _{1, j} , 712 _{, j.} Of the measurement points of each of the Z heads 71 _{1, j} , 712 _{2, j} , that is, among a plurality of detection points of the multi-point AF system (90a, 90b). Corresponding to a point on the X-axis passing through the center detection point (substantially coincident with the detection center of the alignment system ALG): surface position information is obtained at this point, hereinafter referred to as the left measurement point. Further, main controller 50 determines the region near the + X side end of plate 28 (Y scale ₎ based on the average value of the measured values of Z heads 77 _{1, (6-j)} , 77 _{2, (6-j).} 39Y ₂ is formed on a predetermined point (for example, the Z point 77 _{1, (6-j)} , 77 _{2, (6-j))} , that is, the multipoint AF system (90a). , 90b) is equivalent to a point on the X axis passing through the central detection point (substantially coincident with the detection center of the alignment system ALG): the surface position information at this point is hereinafter referred to as the right measurement point) Ask for. Then, main controller 50 determines the surface position information at each detection point of the multipoint AF system (90a, 90b) based on the straight line connecting the surface position of the left measurement point and the surface position of the right measurement point. It converts into data (it is set as z1-zk). The main controller 50 performs such conversion for the information captured at the time of all sampling.

In this way, by obtaining the conversion data in advance, for example, in the case of exposure, the above-described Z heads 79 _{1, j} , 79 _{2, j} and 81 _{1, (6-j)} , At 81 _{2, (6-j)} , surface of wafer stage WST2 (a point on the area where Y scale 39Y ₂ is formed (left measurement point) and a point on the area where Y scale 39Y ₁ is formed (right measurement point)) ) To calculate the Z position of wafer stage WST and the tilt (θy rotation (and θx rotation)) with respect to the XY plane, the calculated Z position of wafer stage WST2, the tilt with respect to the XY plane, and the aforementioned surface By using the position data z1 to zk, the surface position control of the wafer W can be performed without actually acquiring the surface position information of the wafer surface. Therefore, there is no problem even if the multipoint AF system is arranged at a position distant from the projection optical system PL, so that the focus mapping of the present embodiment can be suitably applied even to an exposure apparatus with a narrow working distance.

At the time of wafer exchange and wafer alignment, the main controller 50 moves the wafer stage WST2 to the Y linear motor 75Y and the pair of X based on the detection results of the interferometer system 60 or the at least three encoders. It is driven with a long stroke via the linear motors 85X ₁ and 85X ₂ , and the wafer stage WST2 is finely driven with respect to the fork portion 67 _{1 in the} direction of 6 degrees of freedom via the 6 degrees of freedom drive mechanism described above.

  In this way, in parallel with the wafer exchange, wafer alignment, and the like being performed on wafer stage WST2, the wafer stage WST1 side is placed on wafer stage WST1 based on the already performed wafer alignment result. Stepping operation between shots for moving wafer stage WST1 to the acceleration start position for exposure of each shot area on wafer W1 (for example, wafer stage WST1 can be moved along a U-shaped path, In this case, the stage movement in the shot shot stepping operation and the scanning exposure operation continues, but here, for convenience, it is called the shot shot stepping operation), reticle R (reticle stage RST), and wafer W1 (wafer). Reticle R is scanned relative to stage WST1) in the Y-axis direction. A step-and-scan exposure operation is performed in which a scanning exposure operation for transferring the formed pattern onto the shot area on the wafer W1 via the projection optical system PL is alternately repeated (FIG. 5B and FIG. 5B). (See FIG. 6A). In the present embodiment, as schematically shown by a thick solid line in FIG. 6A, the movement path TR1 of the wafer stage WST2 at the time of alignment of the wafer W2, and the step-and-scan exposure. The movement path TR2 of the wafer stage WST1 in operation is substantially the same. Here, the movement path TR2 is a path that connects the centers of the shot areas on the wafer W1 in accordance with the exposure order. Of course, since the exposure to the wafer W1 is actually performed by the so-called complete alternate scanning method, the movement path in the XY plane of the wafer stage WST1 during the exposure operation is the movement path of the wafer stage WST2 during the alignment of the wafer W2. Does not exactly match the travel path. However, when viewed roughly, the movement paths of both are similar zigzag paths. 6A, the detection center of the alignment system ALG and the optical axis of the projection optical system PL move on the fixed wafers W2 and W1 so that the description is easy to understand visually. It is shown as if. However, in actuality, wafer stages WST2 and WST1 are moved below fixed alignment system ALG and projection optical system PL along paths TR1 and TR2 indicated by solid lines and reverse paths, respectively.

Prior to the start of the above-described step-and-scan exposure operation, the main controller 50 sets the X scales 39X ₃ , 39X ₄ , and Y among the heads 62E, 62G, and 62F, 62H. Within the XY plane of wafer stage WST1 based on at least three of the measurement values of the two X heads and the two Y heads facing scales 39Y ₃ and 39Y ₄ , that is, the measurement values of four encoders 70E to 70H, respectively. , The pair of second reference marks on the reference mark plate FM1 on the wafer stage WST1 and the pair of reticle alignment marks on the reticle R are measured using the reticle alignment system 14 described above. . Then, main controller 50 performs exposure of each shot area on wafer W1 based on the measurement result, the result of the wafer alignment described above, and the known positional relationship between the first reference mark and the second reference mark. Wafer stage WST1 is moved to the acceleration start position for this purpose.

During the above step-and-scan exposure operation, main controller 50 drives wafer stage WST1 with a long stroke via Y linear motor 75Y and a pair of X linear motors 85X ₁ and 85X ₂ described above. relatively X, Y, Z, [theta] x, [theta] y, finely drives regard θz direction wafer stage WST1 via the aforementioned six degrees of freedom drive mechanism with respect to the fork unit 67 _2. In this case, the main controller 50 faces the measurement results of the Z head and the multipoint AF system (90a, 90b) acquired during focus mapping prior to the start of exposure, and the Y scales 39Y ₃ and Y ₄ during exposure. Using the measured values of each pair of Z heads, the wafer stage WST1 is driven in the Z, θx, and θy directions, that is, the surface position of the wafer W1 is controlled.

  Since the procedure of the exposure operation itself is the same as that of a normal scanning stepper, further detailed description is omitted.

  In the present embodiment, all shot areas on the wafer W2 are sample shot so that the wafer alignment operation for the wafer W2 on the wafer stage WST2 described above ends slightly earlier than the exposure operation for the wafer W1 on the wafer stage WST1. As an area.

  Thereafter, when the exposure operation for wafer W1 on wafer stage WST1 is completed (see FIG. 6A), main controller 50 moves wafer stage WST2 in parallel with moving wafer stage WST1 in the -Y direction. Move in + Y direction. FIG. 6B shows a state after the movement is completed.

When the movement of wafer stage WST2 in the + Y direction is completed, main controller 50 moves wafer stage WST2 in the + X direction via a pair of X linear motors 84X ₁ and 84X ₂ . FIG. 7A shows a state after the movement is completed.

Then, main controller 50 stops the supply of current to the stator of the fork portion 67 ₁ that constitutes the aforementioned six degrees of freedom drive mechanism of the wafer stage WST2 side. As a result, the supply of current to the stators of the two Z-axis voice coil motors is also stopped, the supporting force (driving force) for supporting the wafer stage WST2 in a non-contact manner in the Z-axis direction is also released, and the wafer stage WST2 It is mounted on the base SB. From this state, the main control unit 50, via the X linear motors _84X 1, 84X ₂ moves the Y linear motor 73Y and the fork unit 67 ₁ in the -X direction. Accordingly, the wafer stage WST2 is disengaged from the fork unit 67 _1. In FIG. 7 (B), the movement of the Y linear motors 73Y and the fork portion 67 ₁ in the -X direction is completed, the wafer stage WST2 is shown a state of being detached from the fork unit 67 _1.

Then, main controller 50, Y linear motors 73Y, via the X linear motors _84X 1, 84X _2, the fork portion 67 ₁ in the slider 73Y integrally is moved in the -Y direction and the + X direction, the X linear motors 85X _1, through a 85X _2, the fork portion 67 ₂ moves the slider 75Y provided in the -X direction in the wafer stage WST1 and integrally. Then, as shown in FIG. 8 (A), closest to the -X side end portion of the fork portion 67 ₁ of the + X side end of the fork 67 ₂ (or contact) causes.

As described above, in a state in which the fork portion 67 ₁ and the fork portion 67 ₂ is closest (or contact) with the main control unit 50, each have three X-axis stator constituting the fork portion 67 ₂ armature coils, and supplies the successively current to each armature coil having three X-axis stator constituting the fork portion 67 _1, the wafer stage WST1, with respect to the fork unit 67 ₂ (and the fork portion 67 ₁₎ -Move in the X direction.

Accordingly, the wafer stage WST1 is transferred from the fork portion 67 ₂ on the fork portion 67 _1. FIG. 8B shows a state in the middle of delivery of wafer stage WST1.

At the time of delivery (movement), the positional relationship between wafer stage WST2 and forks 67 ₁ and 67 ₂ is measured by a sensor group provided on each guide rod constituting each of forks 67 ₁ and 67 _2. because, even if the position of the fork portion 67 ₁ and the fork portion 67 ₂ is slightly deviated from the desired position, based on a detection result of the sensor group, the wafer stage WST1 micro driven by six degrees of freedom fine movement mechanism ( position adjustment) by, it is possible to perform transfer of the wafer stage WST1 from the fork portion 67 ₂ to the fork unit 67 ₁ in a non-contact and fast.

Then, at the stage where wafer stage WST1 is completely passed on to the fork unit 67 _1, the main controller 50, based on the measurement values of the interferometer system 60, to start managing the position of wafer stage WST1. Thereafter, the exposed wafer W1 placed on the wafer stage WST1 is exchanged for the next exposure target wafer W3 (see FIG. 10), and the wafer alignment operation and focus mapping operation of the wafer W3 are described above. It will be performed in the same way.

This one, the main controller 50, by the end of transfer from the fork portion 67 ₂ of the wafer stage WST1 to the fork unit 67 _1, the wafer stage WST1, not combined with any engagement of WST2, has become a free state the fork unit 67 _2, slider 75Y integrally, via a Y linear motor 75Y and the X linear motors _85X 1, 85X _2, moves to approach the wafer stage WST1 that is placed on a stage base SB ( (See FIG. 9A).

Then, from the state of FIG. 9 Y-axis direction position of the wafer stage WST2 and the fork portion 67 ₂ matches (A), the main controller 50, as the wafer stage WST2 and the fork portion 67 ₂ is engaged , through the X linear motors _85X 1, 85X _2, the fork portion 67 _2, slider 75Y and integrally driven in the -X direction, the state of FIG. 9 (B). In this case, the positional relationship between the guide bar and the wafer stage body can be detected via a sensor group provided on the guide bar in a state where the guide bar is inserted into the through hole formed in wafer stage WST2. since, the main controller 50, based on the detection result, while adjusting the relationship between the wafer stage WST2 and the fork portion 67 _2, and drives the fork portion 67 _2. In this way, at the stage where wafer stage WST2 is engaged with the fork portion 67 _2, the main controller 50 generates a driving force of the Z to the axis fine motor + Z direction constituting the six degrees of freedom drive mechanism, the fork portion 67 as ₂ is contactlessly supported wafer stage WST2, and controls the driving force.

Thereafter, main controller 50 starts driving control of wafer stage WST2 based on the measurement value of interferometer system 60, and then a pair of second reference marks and reticles on reference mark plate FM2 on wafer stage WST2. A pair of reticle alignment marks on R are measured using a reticle alignment system 14. Further, in order to determine the relationship between the result of focus mapping and the image plane of the projection optical system PL, the main controller 50 measures the image plane position of the projection optical system PL using a spatial image measuring instrument (not shown), The relationship between the surface of the reference mark plate FM2 and the image plane is obtained. At any point in time until this measurement is performed, main controller 50 changes the measuring device used for position management of wafer stage WST2 from interferometer system 60 to an encoder system (at least three of encoders 70E to 70F). Switch. Then, main controller 50 determines the first on wafer W2 based on the measurement result, the result of the previously performed wafer alignment, and the known positional relationship between the first reference mark and the second reference mark. Wafer stage WST2 is moved to the acceleration start position for exposure of the second shot region. Thereafter, a step-and-scan exposure operation for the wafer W2 is performed in the same manner as the exposure for the wafer W1. Further, during this exposure operation, the main controller 50 calculates the Z heads 791 _{, j} , 792 _{, j} and 811 _{, (6-j)} , 812 _{, (6-j)} based on the measured values. The surface position of the wafer W2 is controlled using the Z position of the wafer stage WST2, the inclination with respect to the XY plane, and the surface position data z1 to zk described above.

  As described above, in the exposure apparatus 10 of the present embodiment, the wafer stage WST1 and WST2 are exchanged, the exposure operation for the wafer on one wafer stage, and the wafer alignment operation (and this on the other wafer stage). (Wafer exchange performed prior to the above) is performed by simultaneous parallel processing.

As described above, according to the present embodiment, the head units 62A, 62B, the detection center (first reference point) of the alignment system ALG on the first coordinate system (matching the center of the detection area of the multipoint AF system). The positional relationship between the heads 62C and 62D (X head, Y head, or Z head) and the head units 62A, 62B, 62C, and 62D with respect to the optical axis AX of the projection optical system PL on the second coordinate system (X The positional relationship of the head, the Y head, or the Z head corresponds to each other. In addition, the alignment result for wafers on wafer stages WST1 and WST2 (array coordinates of shot areas on the wafer obtained by EGA) is converted into position coordinates with the first reference mark on reference mark plates FM1 and FM2 as the origin. The In the exposure operation of the step-and-scan method, the shot area array coordinates converted into the position coordinates with the first reference mark as the origin and a pair of second marks on the reference mark plates FM1 and FM2 are used. The positions of wafer stages WST1 and WST2 are controlled based on the measurement result of the relative position between the reference mark and the pair of reticle alignment marks on reticle R and the known positional relationship between the first reference mark and the second reference mark. . Therefore, for example, in alignment station ASS, wafer stage WST2 has a predetermined positional relationship with respect to the detection center of alignment system ALG on the first coordinate system (for example, position coordinates (X ₁ , Y ₁ )) and rotation angle. θz ₁ ), X head 64, Y head 66, X head 64, Y provided in head units 62A, 62B, 62C and 62D on scales 39Y ₁ , 39Y ₂ , 39X ₁ and 39X ₂ on the upper surface of wafer stage WST2, respectively. When head 66 faces, wafer stage WST2 is in a predetermined positional relationship with respect to optical axis AX of projection optical system PL on the second coordinate system at the second station (for example, position coordinates (X ₁ , Y ₁ ) And the rotation angle θz ₁ ), the X head 64, the Y head 66, the X head 64, and the Y head 66 are The X head 65, Y head 68, X head 65, and Y head 68 respectively provided in the corresponding head units 62E, 62F, 62G, and 62H are the same as the scales 39Y ₁ , 39Y ₂ , 39X ₁ , 39X _{2 on} the upper surface of the wafer stage WST2. Opposite areas. Further, when wafer stage WST2 is in the predetermined positional relationship with respect to the center of the detection area of multi-point AF system 90 (coincides with the detection center of alignment system ALG), scales 39Y ₁ and 39Y _{2 on} the upper surface of wafer stage WST2 When a pair of Z heads (for example, Z heads 71 _1,3 , 71 _2,3 , 77 _1,3 , 77 _2,3 ) are opposed to a predetermined area (first area and second area), when the wafer stage WST2 is in the predetermined positional relationship with respect to the optical axis AX of the projection optical system PL, Z head 79 _1,3, 79 _2,3, 81 _1,3, 81 _2,3 wafer stage WST2 It faces the _first and second regions of the upper scales 39Y ₁ and 39Y ₂ . The same applies to wafer stage WST1.

  Accordingly, even if there are measurement error factors such as irregularities in the Y scale or X scale on the upper surfaces of wafer stages WST1 and WST2, or deformation over time, the X axis direction and Y axis direction of wafer stages WST1 and WST2 at alignment station ASS. And θz direction, and errors occurring in the measured values of the X head, Y head, and Z head of the first measurement system for measuring position information in the Z-axis direction, θy direction, and θx direction, respectively, and the wafer stage WST1 at the exposure station ESS , WST2 results in the measurement values of the X head, Y head, and Z head of the second measurement system that measures position information in the X axis direction, Y axis direction, θz direction, and Z axis direction, θy direction, and θx direction, respectively. Error is almost the same (individual difference between each corresponding head and Z head (including calibration error) If the residual is) it becomes. The individual difference between the corresponding heads and Z heads can be reduced to a negligible level by accurately performing output calibration in advance.

  Therefore, the first measurement system is used in the alignment station ASS without being affected by the measurement error factors of the Y scales and the X scales on the upper surfaces of the wafer stages WST1 and WST2 facing each X head, each Y head, and each Z head. Based on the position information of the wafer stages WST1 and WST2 measured in step 1, it becomes possible to accurately manage the positions of the wafer stages WST1 and WST2 using the second measurement system in the exposure station ESS.

  Therefore, in alignment station ASS, based on the mark detection operation using alignment system ALG and the wafer shot region array coordinates obtained from the position information of wafer stages WST1 and WST2 measured by the first measurement system during the mark detection operation. By controlling the positions of the wafer stages WST1 and WST2 using the second measurement system in the exposure station ESS, it is possible to perform highly accurate exposure. Thereby, the pattern of the reticle R is accurately transferred to a plurality of shot areas on the wafer.

  In the above embodiment, the case where both the first measurement system and the second measurement system are provided with the X head, the Y head, and the Z head has been described. However, the present invention is not limited to this, and the X head, the Y head, and One or two Z heads may be provided in both the first measurement system and the second measurement system. In short, the second measurement system corresponds to the positional relationship of the plurality of first heads of the first measurement system with respect to the detection center of the alignment system ALG or the multipoint AF system 90 with respect to the optical axis AX of the projection optical system PL. What is necessary is just to have the some 2nd head arrange | positioned by positional relationship.

  The configuration of the wafer stage drive system for exchanging and driving wafer stages WST1 and WST2 is not limited to the configuration of the first embodiment, and the configuration disclosed in, for example, JP 2000-505958 A is adopted. May be.

<< Second Embodiment >>
Next, a second embodiment of the present invention will be described with reference to FIGS. Here, the same reference numerals are used for the same or equivalent components as those in the first embodiment described above, and the description thereof is simplified or omitted.

  In the exposure apparatus 10 ′ according to the second embodiment, as shown in FIG. 11, two FIA systems are formed at the same distance in the −X direction and the + X direction with the projection optical system PL as the center. Alignment systems ALG1 and ALG2 are provided. Accordingly, the configuration of the wafer stage drive system and the arrangement and number of head units of the encoder system are different from those of the first embodiment, but the configuration of other parts. Is the same as in the first embodiment. Below, it demonstrates centering around difference.

  In exposure apparatus 10 ′, as a wafer stage drive system for driving wafer stages WST1 and WST2, a pair of X-axis linear guides (X stators) installed on floor F and extending in the X-axis direction, and the X-axis linear A total of four X linear motors each constituted by two pairs of X sliders (X movers) driven along a guide, and each pair of X linear motors is driven in the X-axis direction, respectively. Y A linear motor mechanism including a pair of Y linear motors configured by a pair of Y stators whose longitudinal direction is the axial direction and a Y mover driven along each of the pair of Y stators is included. . In this case, wafer stages WST1 and WST2 are arranged in three degrees of freedom in the Z-axis, θx, and θy directions on the stage main body on which the Y mover of each of the pair of Y linear motors is integrally provided. A configuration including a wafer table that is micro-driven can be employed. A stage apparatus having such a configuration is disclosed in, for example, Japanese Patent Laid-Open No. 10-214783.

  Hereinafter, for convenience, it is assumed that wafer stages WST1 and WST2 are each a single stage that is individually driven in the direction of six degrees of freedom on stage base SB by a wafer stage drive system.

  In the second embodiment, as shown in FIG. 12, the head units 62A to 62D described above are arranged in a cross shape in the same manner as described above with the detection center of the alignment system ALG1 as the center. However, the head units 62E to 62H described above are arranged in a cross shape in the same manner as described above, with the detection center of the alignment system ALG2 as the center, not the optical axis center of the projection optical system PL. In the second embodiment, a pair of alignment stations ASS is configured to perform alignment processing on the wafers on wafer stages WST2 and WST1 with alignment systems ALG1 and ALG2 as the centers (see FIG. 11).

  In this case, the detection center of alignment system ALG1 and the detection center of alignment system ALG2 are arranged on a straight line (reference axis) LH parallel to the X axis passing through optical axis AX of projection optical system PL. The head units 62D and 62F are symmetrically arranged with respect to a straight line (reference axis) LV3 parallel to the Y axis passing through the optical axis AX of the projection optical system PL. In addition, head units 62I and 62J having the same configuration as the head units 62A and 62C are disposed on one side and the other side of the projection optical system PL in the Y-axis direction and symmetrical with respect to the reference axis LH (and the optical axis AX). Has been. In the present embodiment, the positional relationship of the head units 62I, 62D, 62J, and 62F with respect to the optical axis AX of the projection optical system PL is such that the head units 62A, 62B, 62C, and 62D with respect to the detection center of the alignment system ALG1 (or ALG2). 62E, 62F, 62G, and 62H). However, the head units 62D and 62F are slightly different from the head units 62B and 62H in that the head units 62D and 62F have six Y heads and six pairs (12) Z heads sandwiching each Y head.

  In the second embodiment, as in the first embodiment described above, an exposure station ESS that performs exposure processing on the wafers on wafer stages WST2 and WST1 is configured with projection optical system PL as the center. (See FIG. 11).

  Although the description has been made, the ten head units 62A to 62J are arranged on a plane parallel to the XY plane that substantially coincides with the lower end surface of the projection optical system PL.

  The configuration of the other parts of the exposure apparatus 10 'is the same as that in the first embodiment.

  In exposure apparatus 10 ′, as shown in FIG. 12, when wafer stage WST2 is below alignment system ALG1, wafer alignment (EGA) is performed on wafer W2 held on wafer stage WST2. In parallel, exposure is performed on wafer W1 on wafer stage WST1 below projection optical system PL.

In this case, the position of wafer stage WST2 during alignment with respect to wafer W2 is Y scales 39Y ₁ , 39Y ₂ and X scales 39X ₁ , 39X among the plurality of heads of head units 62A, 62C and head units 62B, 62D. ₂ is managed by the main controller based on at least three of the measured values of the two Y heads and the two X heads respectively facing 2, ie, the measured values of the four encoders 70A to 70D. Also in this case, the main controller converts all shot arrangement coordinates on the wafer W2 obtained as a result of EGA into position coordinates having the position of the first reference mark as the origin.

  Prior to alignment with wafer W2, on wafer stage WST2, wafer exchange for exchanging the exposed wafer for wafer W2 is performed at a position near the lower side of alignment system ALG1.

Prior to the start of the step-and-scan exposure operation for wafer W1 on wafer stage WST1, main controller 50 sets X scale among the plurality of heads of head units 62I, 62D and 62J, 62F. The position of wafer stage WST1 in the XY plane is determined based on at least three of the measurement values of two X heads and two Y heads respectively facing 39X ₃ and 39X ₄ and Y scales 39Y ₃ and 39Y _4. While being managed, the pair of second reference marks on the reference mark plate FM1 on the wafer stage WST1 and the pair of reticle alignment marks on the reticle R are measured using the reticle alignment system 14 described above. Then, main controller 50 determines each shot on wafer W1 based on the measurement result, the result of the wafer alignment described above, and the known positional relationship between the first reference mark and the second reference mark on the reference mark plate. Wafer stage WST1 is moved to the acceleration start position for exposure of the region.

  FIG. 13A shows a state immediately before the exposure operation for wafer W1 on wafer stage WST1 and the alignment (EGA) operation for wafer W2 on wafer stage WST2 are started. FIG. 13B shows a state immediately after the exposure operation for wafer W1 on wafer stage WST1 and the alignment (EGA) operation for wafer W2 on wafer stage WST2 are completed.

  In the second embodiment, as schematically shown by a thick solid line in FIG. 13B, the movement path TR1 of the wafer stage WST2 during the alignment of the wafer W2, and the step-and-scan The movement path of wafer stage WST1 during the system exposure operation (path connecting the centers of the shot areas on wafer W1 in accordance with the exposure order) TR2 is substantially the same. Of course, since the exposure to the wafer W1 is actually performed by the so-called complete alternate scanning method, the movement path in the XY plane of the wafer stage WST1 during the exposure operation is the movement path of the wafer stage WST2 during the alignment of the wafer W2. Does not exactly match the travel path. However, when viewed roughly, the movement paths of both are similar zigzag paths. In this case, the movement operation of wafer stage WST2 for alignment and the movement operation of wafer stage WST1 for exposure do not need to be performed in synchronization, and may be performed before and after the time. In short, the alignment operation on the wafer W2 and the exposure operation on the wafer W1 may be performed in parallel.

  Main controller 50 drives wafer stage WST2 for which the alignment operation has ended and WST1 for which the exposure operation has ended in the + X direction at the same time. Thereafter, on wafer stage WST1, a series of operations including wafer exchange and wafer alignment operation using alignment system ALG2 are performed in the same manner as on wafer stage WST2, and in parallel with this, wafer of wafer stage WST2 is processed. A series of operations including a step-and-scan exposure operation for W2 is performed in the same manner as the wafer stage WST1 side described above.

  In this way, in the exposure apparatus 10 ′ according to the second embodiment, the exposure operation for the wafer on one wafer stage and the wafer exchange and wafer alignment operations on the other wafer stage are processed simultaneously in parallel. It is done at.

  Although detailed description is omitted, also in the second embodiment, as shown in FIG. 12, the multi-point AF system (90a, 90b) is disposed in the vicinity of the alignment systems ALG1 and ALG2 in the same manner as described above. By arranging, the main controller 50 performs the same focus mapping as described above, and uses the surface position information (measurement data) obtained during the focus mapping, and the like, in the same procedure as described above, for the wafer being exposed. Surface position control can be performed.

  According to the second embodiment described above, the same effects as in the first embodiment can be obtained, and the alignment systems ALG1 and ALG2 are provided on the −X side and the + X side of the projection optical system PL, respectively. Therefore, only by moving wafer stages WST2 and WST1 in the X-axis direction, it is possible to switch between the alignment operation and the exposure operation for the wafers held on those stages. Therefore, by shortening the switching time, it becomes possible to perform exposure with high throughput as compared with the case where the above-described switching method is adopted.

  Further, in the first and second embodiments, the surface position of wafer stage WST is obtained by each pair of Z heads opposed to the pair of Y scales, that is, a total of two pairs of Z heads, both at the time of focus mapping and at the time of exposure. However, the present invention is not limited to this, and the position information of the wafer stage WST in the Z-axis direction, θx direction, and θy direction is measured using three of two pairs of Z heads. You may do it.

  Therefore, in each of the above-described embodiments, the head units 62B, 62D, 62F, and 62H do not necessarily have to include each pair of Z heads arranged with the Y heads sandwiched between the Y heads (encoder heads). .

  Further, in each of the above embodiments, the head units 62B, 62D, 62F, and 62H include the Z head together with the encoder head, so that the encoder head and the Z head are apparently integrated. However, the present invention is not limited to this, and a sensor head that functions as both the Z head and the encoder head may be configured by configuring at least a part of the optical system of each of the Z head and the encoder head with a common optical element. .

  In each of the above embodiments, the case where the present invention is applied to a twin-stage type exposure apparatus having two wafer stages has been described. However, the present invention is not limited to this, and even a single-stage type exposure apparatus can be used for projection. The present invention can be suitably applied when the optical system and the alignment system are arranged apart from each other.

  In each of the above embodiments, the Z head measures the surface position information of the surface of the Y scale on the wafer stage. However, the Z head is not limited to the surface of the scale, but other than the area where the wafer is placed. If so, the surface position information of any region on the upper surface of the wafer stage may be measured.

In each of the above-described embodiments, ArF excimer laser light or the like is used. However, the present invention is not limited to this, and ultraviolet light from an ultrahigh pressure mercury lamp (g-line, i-line, etc.), KrF excimer is used as illumination light IL. Of course, vacuum ultraviolet light such as F ₂ laser light (wavelength 157 nm) or Ar ₂ laser light (wavelength 126 nm) may be used as well as the laser light. Further, for example, as the vacuum ultraviolet light, a single wavelength laser beam oscillated from a DFB semiconductor laser or a fiber laser is a single wavelength laser light, for example, erbium (Er) (or both erbium and ytterbium (Yb)). It is also possible to use a harmonic that is amplified by a doped fiber amplifier and wavelength-converted to ultraviolet light using a nonlinear optical crystal.

  Further, an exposure apparatus that uses EUV light, X-rays, or charged particle beams such as an electron beam or an ion beam as illumination light IL, a projection system that does not use a projection optical system, such as a proximity type exposure apparatus, a mirror projection aligner, and The present invention may also be applied to an immersion type exposure apparatus disclosed in International Publication WO99 / 49504 and the like in which a liquid is filled between the projection optical system PL and the wafer.

  In each of the above-described embodiments, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate, or a predetermined reflecting pattern on a light-reflecting substrate. However, the present invention is not limited to these. For example, instead of such a mask, an electronic mask (which is a kind of optical system) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed may be used. Such an electronic mask is disclosed, for example, in US Pat. No. 6,778,257. Note that the above-described electronic mask is a concept including both a non-light-emitting image display element and a self-light-emitting image display element.

  Further, for example, the present invention can also be applied to an exposure apparatus that exposes a substrate with interference fringes caused by interference of a plurality of light beams, which is called two-beam interference exposure. Such an exposure method and exposure apparatus are disclosed in, for example, WO 01/35168.

  In each of the above embodiments, the case where the present invention is applied to a scanning exposure apparatus such as a step-and-scan method has been described, but the scope of the present invention is of course not limited thereto. That is, the present invention can be suitably applied to a step-and-repeat reduction projection exposure apparatus.

  The present invention is not limited to an exposure apparatus for manufacturing a semiconductor, but is used for manufacturing a display including a liquid crystal display element. An exposure apparatus for transferring a device pattern onto a glass plate and a device used for manufacturing a thin film magnetic head. The present invention can also be applied to an exposure apparatus that transfers a pattern onto a ceramic wafer, and an exposure apparatus that is used for manufacturing an imaging device (CCD or the like), micromachine, organic EL, DNA chip, and the like. Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., glass substrates or silicon wafers, etc. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern.

  A semiconductor device includes a step of performing functional / performance design of a device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and a reticle by the above-described method using the exposure apparatus of the above-described embodiment. This pattern is manufactured through a step of transferring the pattern to a wafer, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like.

  As described above, the moving body drive apparatus of the present invention is suitable for driving a moving body. The exposure apparatus and exposure method of the present invention are suitable for forming a pattern on a sensitive object. The device manufacturing method of the present invention is suitable for manufacturing micro devices.

It is a figure which shows schematically the structure of the exposure apparatus which concerns on 1st Embodiment. It is a top view which shows the stage apparatus of FIG. FIG. 3 is a plan view showing the head units 62A to 62H and the multipoint AF system according to the first embodiment together with wafer stages WST1 and WST2. It is a block diagram which shows schematic structure of the control system of the exposure apparatus which concerns on 1st Embodiment. FIG. 5A is a diagram (No. 1) for explaining a series of operations including parallel processing operations of two wafer stages (hereinafter, abbreviated as “stage parallel processing operation” as appropriate), FIG. ) Is a diagram (No. 2) for explaining the “stage parallel processing operation”. FIG. 6A is a diagram (part 3) for explaining the “stage parallel processing operation”, and FIG. 6B is a diagram (part 4) for explaining the “stage parallel processing operation”. FIG. 7A is a diagram (part 5) for explaining the “stage parallel processing operation”, and FIG. 7B is a diagram (part 6) for explaining the “stage parallel processing operation”. 8A is a diagram (part 7) for explaining the “stage parallel processing operation”, and FIG. 8B is a diagram (part 8) for explaining the “stage parallel processing operation”. FIG. 9A is a diagram (No. 9) for explaining “stage parallel processing operation”, and FIG. 9B is a diagram (No. 10) for explaining “stage parallel processing operation”. FIG. 11 is a diagram (No. 11) for explaining the “stage parallel processing operation”; It is a figure which shows schematically the structure of the exposure apparatus which concerns on 2nd Embodiment. FIG. 6 is a plan view showing head units 62A to 62J and a multipoint AF system according to a second embodiment together with wafer stages WST1 and WST2. FIGS. 13A and 13B are diagrams for explaining a series of operations including parallel processing operations of two wafer stages of the exposure apparatus according to the second embodiment.

Explanation of symbols

10 ... exposure apparatus, 39Y ₁ ~39Y ₄ ... Y scales, 39X ₁ ~39X ₄ ... X scale, 50 ... main control unit, 62A to 62D ... head unit, 62E～62H ... header unit, 64 ... X heads 65 ... X head, 66 ... Y head, 68 ... Y head, 70A, 70C, 70E, 70G ... X linear encoder, 70B, 70D, 70F, 70H ... Y linear encoder, 71 ... Z head, 77 ... Z head, 79 ... Z Head, 81 ... Z head, WST1, WST2 ... Wafer stage, ALG ... Alignment system, PL ... Projection optical system, IL ... Illumination light, W1, W2 ... Wafer.

Claims (20)

A moving object that moves while holding the object;
A plurality of first heads arranged in a predetermined positional relationship with respect to a first reference point on a first coordinate system that regulates the movement of the moving body, the first head facing the upper surface of the moving body; A first station provided with a first measurement system for measuring position information of the movable body in a predetermined direction based on a measurement value, and performing a first process on an object on the movable body;
A plurality of second elements arranged in a positional relationship corresponding to a positional relationship of the plurality of first heads with respect to the first reference point with respect to a second reference point on a second coordinate system that defines the movement of the moving body. A second measuring system that includes a head and measures positional information of the moving body in the predetermined direction based on a measurement value of the second head facing the upper surface of the moving body; And a second station where the second process is performed. On the first coordinate system, when the moving body is in a predetermined positional relationship with respect to the first reference point, the first head of the first head that faces a part of the detection area on the upper surface of the moving body. A first positional relationship with respect to the first reference point on the coordinate system;
On the second coordinate system, when the movable body is in the predetermined positional relationship with respect to the second reference point, the second coordinates of the second head facing the detected area on the upper surface of the movable body. The moving body drive system according to claim 1, wherein the second positional relationship with respect to the second reference point on the system is the same positional relationship. A moving object that moves while holding the object;
Positional relationship with respect to the first reference point facing a partial area of the upper surface of the moving body when the moving body is in a predetermined positional relationship with respect to the first reference point on the first coordinate system defining the movement Has a first measurement system that measures positional information of the movable body in a predetermined direction by a fixed first head, and a first station that performs a first process on an object on the movable body;
The first head relative to the first reference point with respect to the second reference point when the movable body is in the predetermined positional relationship with respect to a second reference point on a second coordinate system defining the movement; A second measurement system that measures positional information of the movable body in a predetermined direction is provided by a second head that is in the same positional relationship and faces the same area on the upper surface of the movable body as the area facing the first head. And a second station in which a second process is performed on the object on the moving body. A grating having the predetermined direction as a periodic direction is disposed on the upper surface of the moving body,
The first and second measurement systems are configured to position the movable body in the predetermined direction based on measurement values of the first and second heads facing the grating among the plurality of first and second heads. The moving body drive system according to any one of claims 1 to 3, further comprising an encoder system for measuring information. First and second gratings each having a first direction and a second direction perpendicular to the first direction as the periodic directions are disposed on the upper surface of the moving body,
The first and second heads include a plurality of first encoder heads and a plurality of second encoder heads,
The encoder system includes: a first encoder that measures position information of the moving body in the first direction based on a measurement value of a first encoder head that faces the first grating among the plurality of first encoder heads; A second encoder that measures position information of the moving body in the second direction based on a measurement value of the second encoder head facing the second grating among the plurality of second encoder heads. Item 5. A moving body drive system according to Item 4. On the upper surface of the moving body, at least one of the first and second gratings is disposed apart from each other in a direction orthogonal to the periodic direction,
The encoder system measures not only position information of the moving body in the first and second directions but also rotation information within the plane of the moving body based on measurement values of the first encoder and the second encoder. The moving body drive system according to claim 5.   The moving body drive system according to claim 6, wherein each pair of the first grating and the second grating is disposed on the upper surface of the moving body so as to be symmetrical with respect to the first direction and the second direction.   Each of the first and second measurement systems further includes a surface position measurement system that measures surface position information of the moving body based on measurement values of the first and second heads facing the upper surface of the moving body. The moving body drive system according to any one of claims 4 to 7. The first and second heads include a plurality of surface position sensor heads,
The movement according to claim 8, wherein the surface position measurement system measures surface position information of the moving body based on a measurement value of a surface position sensor head facing the grating among the plurality of surface position sensor heads. Body drive system.   The surface position measurement system further measures inclination information of the moving body based on measurement values of at least two of the surface position sensor heads facing the grating among the plurality of surface position sensor heads. The moving body drive system described in 1. The plurality of first heads are arranged in a cross shape around the first reference point,
The movable body drive system according to claim 1, wherein the plurality of second heads are arranged in a cross shape with the second reference point as a center.   The moving body drive system according to any one of claims 1 to 11, wherein a plurality of the moving bodies are provided, and the plurality of moving bodies are independently movable.   The mobile body drive system according to claim 12, wherein a pair of the first stations are provided symmetrically with respect to the second station. An exposure apparatus that exposes a sensitive object with an energy beam to form a pattern on the sensitive object,
The movable body drive system according to any one of claims 1 to 13, wherein the sensitive object is held on the movable body.
A mark detection system that is disposed near the first reference point of the first station and detects a mark formed on the sensitive object;
An optical system disposed near the second reference point of the second station and projecting the energy beam onto the sensitive object;
An exposure apparatus in which a mark detection operation using the mark detection system is performed in the first station, and an exposure operation is performed in the second station to expose the sensitive object through the optical system with the energy beam.   The moving path of the moving body at the time of the exposure operation in the second station and the moving path of the moving body at the time of the mark detection operation in the first station are set so as to substantially match. Item 15. The exposure apparatus according to Item 14. An exposure apparatus that exposes a sensitive object with an energy beam to form a pattern on the sensitive object,
A movable body that holds the sensitive object and is provided with a scale having a diffraction grating;
A first station that has a first measurement system in which the scale is moved relative to the first head unit by the movement of the movable body, and performs a measurement operation of the sensitive object;
A second station that has a second measurement system in which the scale is moved relative to the second head unit by movement of the movable body, and that performs an exposure operation of the photosensitive object;
The first and second head units are provided such that at least a part of the area on the scale irradiated with the measurement beam is overlapped when the measurement object and the exposure object are substantially the same location on the sensitive object. Exposure equipment.   The first and second measurement systems include positional information of the moving body in a predetermined direction based on measurement values of an encoder head facing the scale among a plurality of encoder heads belonging to the first and second head units. The exposure apparatus according to claim 16, each comprising an encoder system that measures the above.   The first and second measurement systems are configured so that the surface of the moving body is based on a measurement value of a surface position measurement head facing the scale among a plurality of surface position measurement heads belonging to the first and second head units. The exposure apparatus according to claim 17, further comprising a surface position measurement system for measuring position information. An exposure method of exposing a sensitive object with an energy beam to form a pattern on the sensitive object,
A movable body that holds the sensitive object and is provided with a scale having a diffraction grating is arranged at the first station, and performs a measurement operation of the sensitive object while measuring position information of the movable body with a first measurement system,
Moving the moving body from the first station to the second station, performing an exposure operation of the sensitive object while measuring position information of the moving body with a second measurement system;
Exposure in which at least a part of the area on the scale irradiated with the measurement beam is overlapped by the first measurement system and the second measurement system when substantially the same location on the sensitive object is set as the measurement target and the exposure target. Method. Exposing a sensitive object using the exposure method according to claim 19;
Developing the exposed sensitive object.

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