JP2009047811A - Manufacturing method of liquid crystal display, and the liquid crystal display - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress changes in the characteristics of other films by a forming step of an inorganic insulating film which is used in a storage capacitor, in a liquid crystal display. <P>SOLUTION: I a liquid crystal interposed between a pair of substrates opposed to each other in the liquid crystal display, of the manufacturing procedure for the element substrate of the pair of substrates, a transistor which is to serve as a pixel TFT is formed on a light transmissive substrate, then formation of an interlayer insulating film, extraction of source and drain electrodes, formation of a passivation film (PV film), formation of a planarization film and formation of a pixel electrode to be the lower electrode are performed (S10, 12, 14 and 16); and then the FFS insulating film to be the inorganic film is film-deposited (S18) under conditions that satisfy the planarization film not deteriorating and the pixel electrode which is to serve as the lower electrode does not deteriorate. After that, formation of a common electrode which is to serve as the upper electrode and formation of an alignment layer are performed, and the element substrate is obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a manufacturing method of a liquid crystal display device and a liquid crystal display device, and in particular, a pair of electrodes that drive the liquid crystal via an insulating layer is provided on the pair of substrates, with the liquid crystal sandwiched between the pair of substrates facing each other. The present invention relates to a method for manufacturing a liquid crystal display device and a liquid crystal display device.

  Conventionally, a TN (Twisted Nematic) method has been widely used as a display method for liquid crystal display devices, but this method has a limited viewing angle in terms of display principle. As a method for solving this, a pixel electrode and a common electrode are formed on the same substrate, a voltage is applied between the pixel electrode and the common electrode, an electric field substantially parallel to the substrate is generated, and liquid crystal molecules are placed on the substrate. A lateral electric field system is known which is driven in a plane mainly parallel to the plane.

  As the lateral electric field method, an IPS (In Plane Switching) method and an FFS (Fringe Field Switch) method are known. In the IPS system, comb-like pixel electrodes and comb-like common electrodes are arranged in combination. In the FFS method, one of the upper electrode and the lower electrode formed through the insulating layer is assigned to the common electrode, the other is assigned to the pixel electrode, and a slit or the like is formed as an opening through which the electric field passes. .

  As an insulating layer between the upper electrode and the lower electrode, in Japanese Patent Application Laid-Open No. H10-228707, a TFT is used as an insulating layer between the upper and lower ITOs when the pixel electrode and the common signal electrode are composed of upper and lower ITO layers sandwiching the insulating film. An example composed of a single layer of the surface protective insulating layer and an example composed of a gate insulating film of a TFT are disclosed.

Japanese Patent Laid-Open No. 2001-183585

  In a liquid crystal display device, a storage capacitor is provided to suppress a change in pixel potential when driving a liquid crystal. In the case of the FFS method, an insulating film between the upper electrode and the lower electrode is used, and a capacitor formed in an overlapping portion between the upper electrode and the lower electrode can be used as a storage capacitor. In order to make the storage capacitor small and have a large capacitance value, it is necessary to improve the film characteristics of the insulating film between the upper electrode and the lower electrode. For this purpose, it is preferable to use an inorganic insulating film.

  In the case of the FFS method, a planarization film is formed after a transistor is formed on an element side glass substrate, and a lower electrode, an insulating film, and an upper electrode are sequentially stacked thereon. As described above, since the insulating film is formed in a large number of film forming processes, the characteristics of the films formed so far may change due to the influence of the insulating film forming process. If the characteristics of the film formed before the insulating film formation process are changed, the display quality of the liquid crystal display device may be deteriorated.

  An object of the present invention is to provide a method of manufacturing a liquid crystal display device that can suppress the influence of the film characteristics of other films on the process of forming an insulating film formed between an upper electrode and a lower electrode. Another object is to provide a liquid crystal display device.

  The method for manufacturing a liquid crystal display device according to the present invention manufactures a liquid crystal display device in which liquid crystal is sandwiched between a pair of opposing substrates, and a pair of electrodes for driving the liquid crystal is provided on one of the pair of substrates. A step of forming a transistor on the one substrate; a step of forming a flattening film after forming the transistor; and one of the pair of electrodes on the flattening film. A step of forming a first electrode, an insulating film forming step of forming an inorganic insulating film after the formation of the one electrode, and a step of forming the other electrode of the pair of electrodes on the inorganic insulating film. In addition, the one electrode is a transparent conductive film, and the insulating film forming step is performed under conditions that do not alter the planarization film and the one electrode.

  According to the said structure, an insulating film formation process is performed on the conditions which do not denature the planarization film | membrane and one electrode which were formed before that. Thereby, it can suppress that the film | membrane characteristic of another film | membrane is influenced by the formation process of the insulating film used for a storage capacitor.

  The insulating film forming step according to the present invention is preferably performed under conditions of 150 ° C. or higher and 300 ° C. or lower. Within such a temperature range, for example, even if an organic insulating film is used as the planarizing film, changes in the film characteristics, such as transparency and chromaticity, of the planarizing film due to the insulating film forming process can be almost eliminated. Further, for example, even when a transparent conductive film is used for one of the electrodes, deterioration of the transparency and electrical conductivity can be almost eliminated. In addition, an insulating film having good capacitance characteristics can be obtained.

  In the insulating film forming step according to the present invention, it is preferable to start the film formation under a condition in which reducing reactive gas species and oxidizing reactive gas species are reduced. Thereby, it is possible to prevent the planarization film and the one electrode formed before that from being deteriorated by the reducing reactive gas species and the oxidizing reactive gas species.

  In the method for manufacturing a liquid crystal display device according to the present invention, it is preferable that the inorganic insulating film includes at least one of a silicon nitride film, a silicon nitride oxide film, and a silicon oxide film. Thereby, a favorable capacity characteristic can be obtained using a general inorganic insulating film.

  In the method for manufacturing a liquid crystal display device according to the present invention, the planarizing film is preferably formed of a transparent organic insulating film. In general, since the organic insulating film has better flatness of the film formation than the inorganic insulating film, the level difference caused by the film formation up to that point can be reduced.

  In the method for manufacturing a liquid crystal display device according to the present invention, it is preferable that each of the pair of electrodes is made of indium tin oxide or indium zinc oxide. Thereby, the translucency of the liquid crystal display device can be improved.

  The liquid crystal display device according to the present invention is a liquid crystal display device in which a liquid crystal is sandwiched between a pair of opposed substrates, and a pair of electrodes for driving the liquid crystal is provided on one of the pair of substrates, A transistor provided on the one substrate; a planarization film formed to cover the transistor; one electrode of the pair of electrodes formed on the planarization film; and the one electrode covered. And the other electrode of the pair of electrodes formed on the inorganic insulating film, the one electrode being a transparent conductive film, and the other electrode having an opening. And the inorganic insulating film is formed under conditions that do not alter the planarizing film and the one electrode, and has a refractive index of 1.46 to 2.00 and a dielectric constant of 4 to 7. It is characterized by. As a result, it is possible to prevent the film characteristics of other films from being affected by the formation process of the insulating film used for the storage capacitor while ensuring sufficient film characteristics as the storage capacitor of the liquid crystal display device, and display of the liquid crystal display device Quality can be improved.

  Embodiments according to the present invention will be described below in detail with reference to the drawings. Hereinafter, an FFS type liquid crystal display device that performs display composed of three colors of red (R), green (G), and blue (B) will be described. Of course, other than R, G, and B For example, a multi-color configuration including C (cyan) or the like may be used, or monochrome display may be performed. In addition, the shape, structure, material, and the like described below are examples for explanation, and can be appropriately changed according to the use of the liquid crystal display device. In the following description, the FFS method having a slit in the upper electrode as an opening for passing an electric field will be described as a lateral electric field driving method. Good. Further, the IPS system may be used instead of the FFS system. Here, the slit means an opening with both ends closed, and each slit is discretely arranged without being connected to each other. A comb-like or fence-like opening is a plurality of openings that are mutually connected. It has a shape connected at one end.

  FIG. 1 is a plan view of pixels in an element substrate 10 constituting a liquid crystal display device. A liquid crystal display device is a device in which liquid crystal is sandwiched between a pair of opposed substrates and a liquid crystal is driven by a pair of electrodes, and a transistor is provided for each pixel in order to drive a plurality of pixels. When distinguishing between the substrate on which the transistor is disposed and the substrate opposed thereto, the substrate on which the transistor is disposed can be referred to as an element substrate 10, and another substrate opposed to the element substrate 10 is referred to as an element substrate 10. It can be called a counter substrate. Further, when performing color display, one pixel is composed of three sub-pixels of R (red), G (green), and B (blue), and a transistor is arranged for each sub-pixel.

  FIG. 1 particularly corresponds to one pixel of a display area when performing display with a three-color configuration of R, G, and B, that is, three colors, in the element substrate 10 of the active matrix type liquid crystal display device by the FFS method. It is a figure which shows the planar structure about three sub-pixels to do. FIG. 2 is a cross-sectional view exaggerating the thickness direction along the line AA shown in FIG.

  As shown in FIG. 1, in the element substrate 10 of the liquid crystal display device, each of the plurality of drain wirings 34 extends linearly (in the example of FIG. 1, it extends in the vertical direction), and extends in the extending direction. A plurality of gate wirings 36 are respectively arranged in the intersecting direction (here, the orthogonal direction and the horizontal direction in the example of FIG. 1). The drain wiring 34 is a signal line through which a video data signal is transmitted from a control circuit (not shown) of the liquid crystal display device, and is therefore sometimes referred to as a data line or simply a signal line. The gate wiring is a signal line through which a scanning signal for selecting a transistor arranged for each pixel is transmitted. In this sense, the gate wiring is sometimes called a scanning line.

  Each region partitioned by the plurality of drain wirings 34 and the plurality of gate wirings 36 is a pixel layout region. In FIG. 1, three sub-pixel layouts corresponding to the three-color configuration of R, G, and B are provided. An area is shown. Since the configuration of the three sub-pixels is the same, the term “pixel” will be described below as a sub-pixel unit unless otherwise specified, and the above-described sub-pixel region will be simply described as a pixel region. Since the common electrode 46 is arranged over the entire surface of the element substrate 10 or across a plurality of pixels, the outline thereof is not shown in FIG. 1 except for the shape line of the slit 48 described later. .

  The pixel TFT 20 is arranged in each pixel arrangement region partitioned by the drain wiring 34 and the gate wiring 36. In the example of FIG. 1, for each pixel TFT 20, the semiconductor layer extends in a substantially U shape (in the drawing, the substantially U shape is shown upside down). The gate wiring 36 extends perpendicularly to the arrangement direction of the drain wiring 34 across the arm portion. In this configuration, the source electrode 32 of the pixel TFT 20 is located on the same side with respect to the gate wiring 36 together with the drain electrode 33 connected to the drain wiring 34. Thus, the pixel TFT 20 has a configuration in which the gate wiring 36 intersects the semiconductor layer twice between the source and the drain, in other words, a configuration in which two gate electrodes are provided between the source and the drain of the semiconductor layer. Have.

  As described above, the drain of the pixel TFT 20 is connected to the nearest drain wiring 34 via the drain electrode 33, while the source is connected to the pixel electrode 42 via the source electrode 32. The pixel electrode 42 is a flat electrode provided for each pixel and connected to the source of the pixel TFT 20 of the pixel. In FIG. 1, a rectangular pixel electrode 42 is shown.

  The common electrode 46 is disposed on the element substrate 10 as described above. However, in some cases, the common electrode 46 may be provided for each pixel. In the case of the structure, a common electrode wiring for connecting the common electrode 46 of each pixel is disposed. The common electrode 46 is obtained by providing a transparent electrode film layer with a slit 48 as an opening. The slit 48 has a function of passing an electric field 50 (see FIG. 2) when a voltage is applied between the pixel electrode 42 and the common electrode 46, and generating a lateral electric field mainly parallel to the substrate surface.

  An alignment film is disposed on the common electrode 46, and a rubbing process is performed as an alignment process. The rubbing direction can be performed in a direction parallel to the gate wiring 36 in FIG. The slit 48 of the common electrode 46 is formed such that the extending direction of the long side is slightly inclined with respect to the rubbing direction. For example, it can be formed so as to be inclined at an angle of about 5 ° with respect to the rubbing direction. The element substrate 10 is completed by forming an alignment film on the common electrode 46 and performing a rubbing process.

  Next, the structure of the element substrate 10 in the FFS liquid crystal display device will be described with reference to the cross-sectional view of FIG. FIG. 2 is a cross-sectional view taken along line AA of FIG. 1 as described above, and each element for one pixel is shown.

  The element substrate 10 includes a translucent substrate 18, a pixel TFT 20 formed thereon via an appropriate buffer layer, an interlayer insulating film 30, a source electrode 32, a drain electrode 33, and a passivation film (PV film). ) 38, a planarizing film 40, a pixel electrode 42, an FFS insulating film 44, and a common electrode 46.

  FIG. 3 is a flowchart showing a procedure of a manufacturing method of the liquid crystal display device including a detailed manufacturing procedure of the element substrate 10. Below, it demonstrates using the code | symbol of FIG. 1, FIG. First, a translucent substrate 18 is prepared, and a pixel TFT 20 as a transistor is formed thereon (S10).

  The translucent substrate 18 is made of, for example, a glass plate. The pixel TFT 20 is disposed on the translucent substrate 18 via an appropriate buffer layer. Here, the low-temperature polysilicon is used as a semiconductor layer, and a gate insulating film and a gate electrode 22 are sequentially disposed thereon. Is done. The gate insulating film is made of, for example, silicon oxide (SiOx), silicon nitride (SiNx), or the like, and is disposed on the translucent substrate 18 so as to cover the semiconductor layer. The gate electrode 22 is made of a metal such as Mo or Al, for example, and is disposed on the gate insulating film so as to face the semiconductor layer. Thus, the gate electrode 22 is disposed on the upper side of the semiconductor layer in the element substrate 10.

  After the formation of the pixel TFT 20 that is a transistor, an interlayer insulating film 30 is formed. The interlayer insulating film 30 is made of, for example, silicon oxide, silicon nitride, or the like, and is disposed so as to cover the gate electrode 22 or the like.

  Next, contact holes for the source and the drain are formed in the interlayer insulating film, and the source electrode 32 and the drain electrode 33 are drawn out. The drain electrode 33 is made of, for example, a metal such as Mo, Al, or Ti, and is disposed on the interlayer insulating film 30, and is connected to the drain of the pixel TFT 20 via a drain contact hole that is one of the contact holes. Connected. The drain electrode 33 is stretched as it is to become the drain wiring 34. The source electrode 32 is made of, for example, the same material as that of the drain electrode 33, is disposed on the interlayer insulating film 30, and is connected to the source of the pixel TFT 20 via the source contact hole which is the other of the contact holes. ing. As will be described later, the source electrode 32 is connected to the pixel electrode 42 which is a transparent electrode film.

  Here, in the pixel TFT 20, a portion where the drain electrode 33 and the drain wiring 34 which is a data line are connected is a drain of the pixel TFT 20, and a portion where the source electrode 32 and the pixel electrode 42 are connected is a source of the pixel TFT 20. Since the drain and source of the pixel TFT 20 are compatible, it is possible to call the source connected to the data line side and the drain connected to the pixel electrode 42 side contrary to the above. is there.

  The process until the source electrode 32 and the drain electrode 33 are drawn together is a pixel TFT formation process, and then a passivation (PV) film 38 is formed (S12). The PV film 38 is an insulating film having a function of protecting the entire pixel TFT 20 including the source electrode 32 and the drain electrode 33 from the external environment. The PV film 38 can be made of, for example, silicon oxide, silicon nitride, or the like, similar to the interlayer insulating film 30 described above. The PV film 38 and the interlayer insulating film 30 may have different film qualities.

  Next, the planarizing film 40 is formed (S14). The planarizing film 40 is a film disposed on the PV film 38 so as to cover the drain electrode 33, the drain wiring 34, and the source electrode 32, and has a surface with unevenness caused by the film forming process, the contact hole process, and the like so far. Provided for flattening.

  As the planarizing film 40, for example, an organic transparent insulating film such as an acrylic resin, an inorganic insulating film such as a silicon nitride (SiNx) film, a silicon oxide (SiOx) film, or a silicon nitride oxide (SiOxNy) film can be used. In consideration of the formation of the FFS insulating film 44 on the planarizing film 40, an insulating film having high heat resistance and high reaction resistance is preferable. From this viewpoint, it is preferable to use an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon nitride oxide film. In the case of using an organic transparent insulating film such as an acrylic resin, it is preferable to lower the temperature after the flattening film forming step to suppress a change in the film quality of the flattening film 40. Details of the contents will be described in an FFS insulating film forming step (S18) described later.

  After the planarization film is formed, the pixel electrode 42 as the lower electrode is formed (S16). Specifically, contact holes are formed in the PV film 38 and the planarizing film 40, and then indium tin oxide (ITO) or indium zinc oxide (IZO) is formed on the entire surface as a transparent conductive film. Are formed in the pattern of the pixel electrode 42. As a result, the source electrode 32 and the pixel electrode 42 are electrically connected via the contact hole.

  After the formation of the pixel electrode 42, the FFS insulating film 44 is formed on the entire surface (S18). The FFS insulating film 44 is an insulating film arranged to separate the pixel electrode 42 as a lower electrode and the common electrode 46 as an upper electrode to be formed next, and also an FFS liquid crystal display It is an insulating film that is also used to form a storage capacitor in each pixel constituting the device.

  The FFS insulating film 44 is preferably a film of a material having a high dielectric constant from the viewpoint of being used for a storage capacitor. Therefore, an inorganic insulating film is preferable to an organic insulating film, and for example, it is preferable to include at least one of a silicon nitride film, a silicon oxide film, and a silicon nitride oxide film.

  In addition, since the planarization film 40 and the pixel electrode 42 are already formed before the FFS insulating film 44 is formed, the film forming conditions for the FFS insulating film 44 are set so as not to alter these films. .

  As described above, the planarizing film 40 is made of an organic transparent insulating film such as an acrylic resin or an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon nitride oxide film. Here, when an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon nitride oxide film is used as the planarization film 40, the film characteristics hardly change depending on the film formation conditions of the FFS insulating film 44. On the other hand, when the organic transparent insulating film is used as the planarizing film 40, the reaction due to the oxidizing reactive gas species progresses depending on the deposition temperature of the FFS insulating film 44, and the film characteristics of the planarizing film 40 change. There are things to do. For example, the transmittance of the planarizing film 40 may be 90% or less, and as a result, the display quality may deteriorate. Therefore, it is preferable to set the film formation conditions of the FFS insulating film 44 within a temperature range in which the planarizing film 40 is not altered. Further, it is more preferable to start the film formation under the condition that the oxidizing reactive gas species during the film formation is reduced to such an extent that the surface state of the planarizing film 40 is not deteriorated.

In addition, as described above, in the pixel electrode 42, indium tin oxide (ITO) or indium zinc oxide (IZO) is used as the transparent conductive film. However, these films have transparency and electrical conductivity in a reducing atmosphere. to degrade. For example, the permeability of these films may be reduced to 70% or lower, or the resistivity may be increased to 10 ³ Ωcm or higher, resulting in a decrease in display quality. Therefore, the FFS insulating film 44 is preferably formed under film forming conditions that do not include a reducing reactive gas species (for example, hydrogen). However, when an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon nitride oxide film is used as the FFS insulating film, a gas species containing hydrogen such as monosilane (SiH ₄ ) is used. Even when monosilane is not used, a gas species containing hydrogen such as ammonia (NH ₃ ) is often used as a carrier gas for the reaction. As described above, when it is inevitable to use the reducing reactive gas species, it is preferable to set the film formation conditions of the FFS insulating film 44 within a temperature range in which the pixel electrode 42 is not altered by the reduction reaction. Further, it is more preferable to start the film formation under the condition that the reducing reactive gas species during the film formation is reduced to such an extent that the transparency and electric conductivity of the transparent conductive film are not deteriorated.

  As described above, the FFS insulating film 44 is preferably formed under conditions that satisfy the conditions that the flattening film 40 is not altered and the pixel electrode 42 is not altered. Actually, the FFS insulating film forming step (S18) is preferably formed under conditions of about 150 ° C. or higher and about 300 ° C. or lower. Within this temperature range, even if an oxidizing reactive gas species is used for forming the FFS insulating film, the film characteristics of the planarization film 40 hardly change. Further, even when a reducing reactive gas species is used for forming the FFS insulating film, the reduction reaction hardly proceeds in the pixel electrode 42 and the transparency is not deteriorated. In addition, an insulating film having good capacitance characteristics can be obtained.

  Since an inorganic insulating film can be used for the FFS insulating film 44, characteristics with a refractive index of 1.46 to 2.00 and a dielectric constant of 4 to 7 can be obtained. By selecting an appropriate value within the range of this characteristic and appropriately setting the film thickness of the FFS insulating film 44, the storage capacitor can be set to an appropriate value according to the specifications of the liquid crystal display device.

Returning to FIG. 3 again, after the FFS insulating film 44 is formed, the common electrode 46 as the upper electrode is formed (S20). Specifically, indium tin oxide (ITO) or indium zinc oxide (IZO) is formed on the entire surface of the FFS insulating film 44 as a transparent conductive film. 48 is opened by patterning. The common electrode 46 is supplied with a common electrode potential by a common electrode wiring (not shown).

  The slit 48 is an opening through which an electric field 50 for driving liquid crystal is passed between the pixel electrode 42 as a lower electrode and the common electrode 46 as an upper electrode. As shown in FIG. 1, the slit 48 is an elongated closed opening having a long axis in a direction slightly inclined from the extending direction of the gate wiring 36. This inclination angle is set in consideration of the rubbing angle of the alignment process in the next step.

  When the common electrode 46 that is the upper electrode is formed, an alignment film is disposed thereon (S22). The alignment film is a film having a function of initially aligning liquid crystal molecules. For example, the alignment film is used by subjecting an organic film such as polyimide to a rubbing treatment. In this way, the element substrate 10 is completed (S24). Although not described here, a counter substrate on which a color filter, an alignment film, and the like are arranged is separately manufactured. The counter substrate and the element substrate 10 are combined, and a liquid crystal is sandwiched therebetween (S26). Completed (S28).

  As described above, the common electrode 46 as the upper electrode and the pixel electrode as the lower electrode are disposed on the transparent substrate 18 that is the same substrate and the upper layer portion of the planarizing film 40 via the FFS insulating film 44 that is the insulating layer. 42 is formed. This structure can be called an overlayer structure. Then, a slit 48 is formed in the common electrode 46 which is the upper electrode, a voltage is applied between the pixel electrode 42 which is the lower electrode, an electric field 50 is passed through the slit 48, and a horizontal plane which is mainly parallel to the substrate surface. An electric field can be generated to drive the liquid crystal through the alignment film. At this time, a capacitor formed by the common electrode 46, the pixel electrode 42, and the FFS insulating film 44 therebetween can be used as a storage capacitor for liquid crystal display. In this way, an active matrix liquid crystal display device based on the FFS method is configured.

  In this way, by using the capacitance formed by the common electrode 46, the pixel electrode 42, and the FFS insulating film 44 between them as the storage capacitance of the liquid crystal display, it is easy to obtain a storage capacitance that meets the specifications of the liquid crystal display device. It becomes. That is, the dielectric constant, film thickness, and the like of the FFS insulating film 44 can be set independently of the characteristics of the pixel TFT 20, and the degree of freedom of setting is great. Further, as described above, the FFS insulating film 44 is formed under conditions that satisfy the conditions that the flattening film 40 is not altered and the pixel electrode 42 that is the lower electrode is not altered. Display quality can be improved.

  In the above description, the lower electrode is the pixel electrode, the upper electrode is the common electrode, and the slit is provided in the common electrode via the FFS insulating film. However, the lower electrode can be the common electrode and the upper electrode can be the pixel electrode. Below, the same code | symbol is attached | subjected to the element which is common in FIG. 1, FIG. 2, and detailed description is abbreviate | omitted.

  FIG. 4 is a diagram illustrating a configuration of the element substrate 12 in which the lower electrode is the common electrode 46, the upper electrode is the pixel electrode 42, and the slit 49 is provided in the pixel electrode 42. When the upper electrode is the pixel electrode 42, the pixel electrode 42 connected to the source electrode 32 is disposed on the FFS insulating film 44 as shown in FIG. 4. A slit 49 is provided in the pixel electrode 42 that is the electrode on the outermost surface side of the element substrate 12. As described with reference to FIGS. 1 and 2, the slit 49 is an elongated closed opening having a long axis in a direction slightly inclined from the extending direction of the gate wiring 36. Further, the common electrode 46 which is a lower electrode is disposed over the entire surface of the element substrate 12 or over a plurality of pixels.

  In this element substrate 12 as well, by changing the manufacturing process corresponding to the above configuration, a liquid crystal display device can be obtained by the same manufacturing procedure as described in FIG. Then, as described in S18 of FIG. 3, in the formation of the FFS insulating film 44, the conditions satisfying that the flattening film 40 is not altered and the common electrode 46 that is the lower electrode is not altered. By forming the film, the display quality of the liquid crystal display device can be improved.

  In the above description, the structure of the pixel TFT has been described as being arranged in the order of the semiconductor layer, the gate insulating film, and the gate electrode from the light transmitting substrate side toward the alignment film. Instead of this arrangement, a pixel TFT having an arrangement structure called a so-called inverted stagger type can be used. Here, the inverted staggered type is a structure in which a gate electrode, a gate insulating film, and a semiconductor layer are arranged in this order from the translucent substrate side toward the alignment film. Below, the same code | symbol is attached | subjected to the element which is common in FIG. 1, FIG. 2, and detailed description is abbreviate | omitted.

  FIG. 5 is a diagram showing a configuration of the element substrate 14 in which the structure of the pixel TFT 21 is an inverted stagger type. Here, the gate electrode 23 is first disposed on the translucent substrate 18 via an appropriate buffer layer, a gate insulating film is formed thereon, and a semiconductor layer is further stacked thereon. For example, amorphous silicon or the like can be used for the semiconductor layer. In the semiconductor layer, a layer forming a channel and a highly doped layer forming a source / drain contact layer are stacked. A source electrode 32 and a drain electrode 33 are connected to both ends of the highly doped layer, respectively. Except for the formation process of the pixel TFT 21, the contents of the other manufacturing processes are the same as those described in FIG.

  Therefore, also in this element substrate 14, by changing the manufacturing process corresponding to the pixel TFT forming process, a liquid crystal display device can be obtained by the same manufacturing procedure as described in FIG. Then, as described in S18 of FIG. 3, in forming the FFS insulating film 44, the film is formed under conditions that satisfy the conditions that the flattening film 40 is not altered and the pixel electrode 42 that is the lower electrode is not altered. As a result, the display quality of the liquid crystal display device can be improved.

In embodiment which concerns on this invention, it is a top view of the pixel in the element substrate which comprises a liquid crystal display device. It is sectional drawing along the AA line in FIG. 5 is a flowchart showing a procedure for manufacturing a liquid crystal display device in the embodiment of the present invention. In embodiment which concerns on this invention, it is a figure which shows the example of another structure. In embodiment which concerns on this invention, it is a figure which shows the example of another structure.

Explanation of symbols

  10, 12, 14 Element substrate, 18 Translucent substrate, 20 Pixel TFT, 22, 23 Gate electrode, 30 Interlayer insulating film, 32 Source electrode, 33 Drain electrode, 34 Drain wiring, 36 Gate wiring, 38 Passivation film (PV Film), 40 planarization film, 42 pixel electrode, 44 FFS insulating film, 46 common electrode, 48, 49 slit, 50 electric field.

Claims (7)

A method of manufacturing a liquid crystal display device in which liquid crystal is sandwiched between a pair of opposing substrates, and a pair of electrodes for driving the liquid crystal is provided on one of the pair of substrates,
Forming a transistor on the one substrate;
A planarization film forming step of forming a planarization film after forming the transistor;
Forming one electrode of the pair of electrodes on the planarizing film;
An insulating film forming step of forming an inorganic insulating film after the formation of the one electrode;
Forming the other electrode of the pair of electrodes on the inorganic insulating film;
Including
The one electrode is a transparent conductive film,
The insulating film forming step includes
A method of manufacturing a liquid crystal display device, which is performed under conditions that do not alter the planarizing film and the one electrode. In the manufacturing method of the liquid crystal display device of Claim 1,
The insulating film formation process
A method for manufacturing a liquid crystal display device, which is performed under conditions of 150 ° C. or higher and 300 ° C. or lower. In the manufacturing method of the liquid crystal display device of Claim 1,
The insulating film formation process
A method for manufacturing a liquid crystal display device, characterized in that film formation is started under conditions where the reducing reactive gas species and the oxidizing reactive gas species are reduced. In the manufacturing method of the liquid crystal display device of Claim 1,
The inorganic insulating film is
A method for manufacturing a liquid crystal display device, comprising at least one of a silicon nitride film, a silicon nitride oxide film, and a silicon oxide film. In the manufacturing method of the liquid crystal display device of Claim 1,
The planarizing film is
A method for manufacturing a liquid crystal display device, comprising a transparent organic insulating film. In the manufacturing method of the liquid crystal display device of Claim 1,
Each of the pair of electrodes is formed of indium tin oxide or indium zinc oxide. A liquid crystal display device in which a liquid crystal is sandwiched between a pair of opposing substrates, and a pair of electrodes for driving the liquid crystal is provided on one of the pair of substrates,
A transistor provided on the one substrate;
A planarization film formed over the transistor;
One electrode of the pair of electrodes formed on the planarizing film;
An inorganic insulating film formed to cover the one electrode;
The other electrode of the pair of electrodes formed on the inorganic insulating film;
With
The one electrode is a transparent conductive film,
The other electrode has an opening;
The inorganic insulating film is formed under conditions that do not alter the planarization film and the one electrode, and has a refractive index of 1.46 to 2.00 and a dielectric constant of 4 to 7. Liquid crystal display device.

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