JP2008294154A - Cvd apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a simple-structured and inexpensive CVD apparatus which can be improved in productivity by reducing waiting time in a work which does not contribute to film formation such as a work of removing a reactive product film attaching to a film formation container and can achieve uniform formation of a film on a film-formed object. <P>SOLUTION: The CVD apparatus 100 is so designed that the film-formed object S stored in the film formation container 1 is heated and a film is formed on the film-formed object S in a heated state. The film formation container 1 includes: a source of heat 2 which heats the film-formed object S supported by a tray 10 from the side opposite from the side supported by the tray 10; and a temperature uniforming member 4 which is disposed between the tray 10 and the source of heat 2, being in contact with the tray 10 and being kept away from the source of heat 2 by a gap Q, and uniforms the temperature of the film-formed object S supported by the tray 10. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a CVD apparatus that heats a film formation object accommodated in a film formation container and forms a film on the heated film formation object, and is used, for example, in the manufacture of semiconductor devices such as solar cells. The present invention relates to a CVD apparatus.

  A conventional CVD apparatus (Chemical Vapor Deposition) for heating a film formation object accommodated in a film formation container and forming a film on the heated film formation object is, for example, nitriding in a semiconductor device manufacturing process. Widely used for film formation of silicon and the like.

  In such a conventional CVD apparatus, generally, a heating means for heating a film forming object accommodated in the film forming container is provided, and the film forming object heated by the heating means is applied to the film forming object. A film is being formed.

  As a conventional CVD apparatus, for example, a heater block in which a sheath heater in which the surface of a heater wire is electrically insulated is embedded in a metal block is used as a heating means, and the deposition target substrate is heated by the heater block. A configured CVD apparatus has been proposed.

  A film forming process using a conventional CVD apparatus using this heater block will be described below by taking a process of forming a solar cell antireflection film as an example. FIG. 2 is a side view schematically showing a conventional CVD apparatus using a heater block.

  In the CVD apparatus 100 ′ shown in FIG. 2, when the film formation is performed, about 100 silicon wafers S as the film formation target substrates are placed on the tray 10 ′ and the silicon wafers S are placed. A tray 10 ′ is accommodated in a film forming chamber 1 which is a film forming container, and is placed on a grounded heater block 20 ′. Then, the heater block on which the tray 10 ′ is placed is heated to a predetermined temperature (for example, about 500 ° C.) by the temperature control means 15 ′.

Next, a gas supply means 7 introduces a mixed gas of silane (SiH ₄ ), ammonia (NH ₃ ), and nitrogen (N ₂ ) as a film forming source gas into the film forming chamber 1, and exhaust means. 14, the inside of the film forming chamber 1 is depressurized and maintained at a predetermined pressure (for example, about 100 Pa).

  Then, in the film forming chamber 1, the power supply means 5 applies high frequency power to the electrode 6 disposed facing the tray 10 ′ so that the mixed gas is brought into a plasma state and placed on the tray 10 ′. A silicon nitride film, which is a reaction product film, is formed on the surface of the silicon wafer S thus formed.

  Such a conventional CVD apparatus 100 'has the following problems. For example, in the semiconductor device manufacturing process, the reaction product film adheres not only to the deposition target substrate S but also to the inner wall 1 ′ of the deposition chamber 1 and the components in the deposition chamber 1. In addition, the series of film forming processes described above is normally repeated continuously. For this reason, the reaction product film adhering to the inner wall 1 ′ of the film forming chamber 1 and the parts inside the film forming chamber 1 becomes the inner wall 1 ′ of the film forming chamber 1 and the parts inside the film forming chamber 1 by repeating the film forming process. Stacked and attached, the internal stress peels off the inner wall 1 ′ of the film forming chamber 1 and the components in the film forming chamber 1, and a part of them adheres to the film formation target substrate S. A part of the reaction product film adhering on the film formation target substrate S inherently hinders normal growth of the reaction product film to be grown on the film formation target substrate S.

  In order to prevent this, the film forming chamber 1 is normally opened periodically (for example, after every predetermined number of film forming processes are finished) and adhered to the inner wall 1 ′ of the film forming chamber 1 or the components in the film forming chamber 1. An operation for removing the reaction product film is performed.

  However, when the film formation chamber 1 is opened, the heater block 20 ′ must be lowered to a certain temperature, and when the heater block 20 ′ or the components in the film formation chamber 1 are exposed to the atmosphere, a sudden temperature rises. There is a risk of damage due to changes. Therefore, in the operation of removing the reaction product film adhering to the film forming chamber 1, the energization to the heater wire 2 ′ is stopped for a certain time, and the temperature of the heater block 20 ′ and the components in the film forming chamber 1 is lowered to some extent. The film forming chamber 1 cannot be opened unless it is later.

  In addition, after the removal of the reaction product film in the film forming chamber 1 is completed, the film forming chamber 1 is sealed and evacuated, and then the heater wire 2 'is further energized so that the film formation target substrate S has a predetermined temperature. Until the heater film 2 ′ is energized for a certain period of time, film formation cannot be performed on the next film formation target substrate S.

  As described above, the heater block 20 ′ has a configuration in which the sheath heater in which the surface of the heater wire 2 ′ is electrically insulated is embedded in the metal block, and thus has a larger heat capacity than the heater wire itself. Therefore, it takes time to lower the temperature and raise the temperature.

  As described above, in the conventional CVD apparatus using the heater block, when the above-described reaction product film removal work is periodically performed, it takes time to lower the temperature and increase the temperature of the heater block. To drop.

  As a solution to this problem, for example, a CVD apparatus that cools a heating means by a cooling means is disclosed (see Patent Document 1 below).

However, in the CVD apparatus described in Patent Literature 1, although the heating means is cooled by the cooling means, the waiting time in the work such as the removal of the reaction product film adhering to the film forming container can be reduced. The configuration is complicated, and the cost of the device is high.
JP 2001-330352 A

  Therefore, the present invention can reduce the waiting time in an operation that does not contribute to film formation such as the operation of removing the reaction product film adhering to the film formation container, thereby improving productivity and film formation. It is an object of the present invention to provide a CVD apparatus having a simple structure and low cost that can realize uniform film formation on an object.

  In order to solve the above-mentioned problems, the present invention is a CVD apparatus for heating a film formation object accommodated in a film formation container and forming a film on the heated film formation object. In the film container, a heating source that heats the film forming object on the side opposite to the film forming object supported by the tray, and is located between the tray and the heat generating source, and is in contact with the tray. And a temperature uniformizing member for uniformizing the temperature of the film formation target supported by the tray in a state in which a space is secured between the heat generation source and the CVD apparatus. .

   The CVD apparatus according to the present invention can be applied to any apparatus as long as it can heat the film formation object accommodated in the film formation container and form a film on the heated film formation object. . For example, a plasma CVD apparatus that forms a film on a film formation object stored in the film formation container under the plasma state by forming a film formation source gas supplied into the film formation container into a plasma state by applying electric power, and film formation An optical CVD apparatus for applying a light energy to a film forming source gas supplied into the container to form a film on a film forming object accommodated in the film forming container, and a film forming source gas supplied into the film forming container It can be obtained by contacting a heated CVD body with a thermal CVD apparatus that thermally decomposes and forms a film on a film forming object accommodated in the film forming container, or a film forming material gas supplied into the film forming container. Examples thereof include a catalytic CVD apparatus for depositing a product to be formed and forming a film on an object to be formed housed in the film forming container.

  According to the CVD apparatus according to the present invention, a space is secured between the heat generation source and the temperature equalizing member instead of using a heater block as in the conventional apparatus, and the heat generation source is the temperature equalizing member. Since the film formation target supported on the tray is heated in a state where there is a space between the heat generation source and the heater block of the conventional apparatus, the object to be supported on the tray is heated even if the heat capacity of the heat generation source is reduced. The film object can be heated without any trouble. Thus, since the heat capacity of the heat source can be made smaller than in the case of the heater block of the conventional apparatus, the time required for the temperature decrease and temperature increase of the heat source can be shortened, and the reaction adhering to the film formation container accordingly. It is possible to shorten the waiting time in operations such as removal of the formed film. Therefore, it is possible to reduce a waiting time in an operation that does not contribute to film formation, such as the operation of removing the reaction product film, thereby improving productivity.

  In addition, the temperature of the film formation target object supported by the tray is uniform in a state of being located between the tray and the heat source, and being in contact with the tray and securing a space between the tray and the heat source. Since the temperature uniformizing member to be formed is provided, the temperature of the film formation target supported on the tray by the temperature uniformization member can be made uniform, thereby achieving uniform formation on the film formation target. A membrane is possible.

  Furthermore, since it is not the structure which provides a cooling means like the conventional apparatus, a structure is simple and it is cheap.

  As a specific aspect of the CVD apparatus according to the present invention, the temperature equalizing member has a contact surface in contact with the tray, and is disposed above the heat source so that the contact surface is horizontal. The aspect which mounts the said tray on the said contact surface of this temperature equalization member, and forms into a film the target object supported by this tray can be illustrated. By doing so, it is possible to form a film formation object with a simpler and cheaper configuration.

  In the CVD apparatus according to the present invention, a mode in which the temperature of the film formation target supported on the tray is controlled by radiation of electromagnetic waves including infrared rays from the heat generation source can be exemplified. Thereby, even in a state where a space is secured between the heat generation source and the temperature equalizing member, the temperature of the film formation target supported on the tray can be favorably controlled. In this case, a typical example of the heat source is a heating wire.

  Moreover, in the CVD apparatus according to the present invention, from the viewpoint of further uniformly heating the film formation target supported by the tray, the temperature uniformizing member has, for example, a thermal conductivity higher than that of the tray. Is preferably made of a large material.

  In the CVD apparatus according to the present invention, the temperature uniformizing member is preferably formed of a metal material. In this case, copper or an alloy containing copper can be used as the metal material having a relatively high thermal conductivity. However, the present invention is not limited to this. For example, iron or an alloy containing iron may be used as a relatively inexpensive metal material.

  As described above, according to the present invention, it is possible to reduce the waiting time in an operation that does not contribute to film formation, such as the operation of removing the reaction product film adhering to the film formation container, thereby improving productivity. In addition, it is possible to provide a CVD apparatus having a simple structure and low cost that can realize uniform film formation on a film formation target.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a side view schematically showing an embodiment of a CVD apparatus according to the present invention. The CVD apparatus 100 shown in FIG. 1 heats the film formation target S accommodated in the film formation container 1, and forms the film on the film formation target S in the heated state.

  The CVD apparatus 100 includes a film forming container 1, a heat generation source 2 that heats the film forming object S on the side opposite to the film forming object S supported by the tray 10, and the tray 10. The temperature of the film-forming target S supported by the tray 10 is made uniform while being in contact with the tray 10 and with a space Q between the tray 10 and the heat source 2. And a temperature equalizing member 4.

  In the present embodiment, the temperature equalizing member 4 has a contact surface (hereinafter referred to as a first plane) 4a that contacts the tray 10, and above the heat source 2 so that the first plane 4a is horizontal. The tray 10 is mounted on the first flat surface 4 a of the temperature equalizing member 4, and the deposition target substrate S supported by the tray 10 is formed.

  More specifically, the CVD apparatus 100 is a film formation target that is formed into a plasma state by applying power to the film formation source gas supplied into the film formation container 1 and is accommodated in the film formation container 1 under the plasma state. The plasma CVD apparatus forms a film on the deposition target substrate S.

  Specifically, the CVD apparatus 100 includes a first electrode 6, a power supply unit 5, a film forming material gas supply unit 7, and an exhaust unit 14 in addition to the above configuration. Here, the temperature equalizing member 4 also serves as the second electrode.

  The film forming container 1 is a vacuum container used as a film forming chamber, and is electrically grounded. The film forming container (hereinafter referred to as a film forming chamber) 1 has an openable / closable opening / closing part (not shown), and the tray 10 and the film forming object are formed in the film forming chamber 1 through the opening / closing part. The substrate S can be carried in, or the tray 10 and the film formation target substrate S can be carried out from the film forming chamber 1.

  The tray 10 is used to place a film formation target substrate S on which a film is formed in the film formation chamber 1. The tray (hereinafter referred to as a substrate tray) 10 is formed in a first plane 10a on which the film formation target substrate S is placed, and substantially parallel to the first plane 10a on the opposite side of the first plane 10a. And a second plane 10b. The first plane 10a is a surface that is in surface contact with the surface S 'opposite to the side on which the film formation target substrate S is formed. The second plane 10 b is a surface that is in surface contact with the first plane 4 a of the temperature equalizing member 4.

  As described above, the temperature equalizing member 4 also serves as the second electrode. Here, the temperature uniformizing member 4 is formed of a conductive material. Further, the temperature equalizing member 4 is disposed such that the first plane 4a in surface contact with the second plane 10b of the substrate tray 10 is horizontal, and the first plane is opposite to the first plane 4a. It has the 2nd plane 4b formed substantially parallel to 4a. Specifically, the temperature equalizing member 4 is formed in a plate shape. The second plane 4b is a surface facing the heat source 2 described later with a space Q therebetween. The temperature equalizing member 4 is formed so as to cover the entire area of the second flat surface 10b of the substrate tray 10. Here, the temperature equalizing member 4 is formed such that the length in the direction along the planes 4 a and 4 b is longer than the length in the direction along the planes 10 a and 10 b of the substrate tray 10.

  The heat source 2 is accommodated in the film forming chamber 1. The heat source 2 has the temperature on the side opposite to the substrate tray 10 mounted on the temperature equalizing member 4 (here, below the temperature equalizing member 4) with respect to the temperature equalizing member 4. The uniformizing member 4 is arranged at a predetermined interval. Here, the heat source 2 generates heat when energized, and is a heating wire having an infrared radiation (radiation) function. The heat source 2 generates heat when electric power is supplied.

  The heat capacity of the heat source 2 is smaller than that of the heater block of the conventional device. That is, the CVD apparatus 100 is not configured to use a heater block as in the conventional apparatus, but is configured to heat the deposition target substrate S in a state where a space exists between the heat source 2 and the temperature equalizing member 4. Therefore, even if the heat capacity of the heat source 2 is made smaller than that of the heater block of the conventional apparatus, the film formation target substrate S can be heated without any trouble.

  The first electrode 6 is accommodated in the film forming chamber 1 and is formed of a conductive material. Here, the first electrode 6 has a surface 6 a extending on the side facing the film formation target substrate S supported by the substrate tray 10 so as to face the film formation target substrate S, and has a hollow shape.

  The first electrode 6 has a gas introduction space 61 into which a film formation source gas supply means 7 to be described later is introduced, and a gas outflow hole 62 that communicates with the gas introduction space 61.

  A surface 6a of the first electrode 6 facing the film formation target substrate S is formed in a plane. A large number (for example, about 1000) of gas outflow holes 62 are formed substantially uniformly at predetermined intervals on the flat surface 6a. The diameter of each gas outflow hole 62 is about 3 mm, for example.

  The first electrode 6 has a gas inflow hole 63 provided on the side opposite to the gas outflow hole 62 formation side. The gas inflow hole 63 communicates with the gas introduction space 61 so that the film forming source gas from the film forming gas supply means 7 flows in.

  The first electrode 6 configured in this way is a so-called shower electrode that also plays a role of ejecting the film forming source gas from the film forming gas supply means 7 into the film forming chamber 1 in a shower shape.

  The power supply means 5 supplies power between the temperature equalizing member 4 also serving as the second electrode and the first electrode 6. Here, the power supply means 5 includes an RF (high frequency) power source 51. An RF (high frequency) power source 51 is electrically connected to the first electrode 6. The temperature equalizing member 4 that also serves as the second electrode is electrically grounded.

  The film forming source gas supply means 7 supplies a film forming source gas into the film forming chamber 1. This film forming source gas supply means 7 includes a gas supply source 71 and a gas supply pipe 72 having one end connected to the gas supply source 71 and the other end connected to the first electrode 6 in the film forming chamber 1. ing. The film forming source gas supply means 7 can supply one type or two or more types of film forming source gases into the film forming chamber 1 via the gas supply pipe 72.

  The exhaust means 14 exhausts the inside of the film forming chamber 1. The exhaust means 14 includes a pressure pump 13 that depressurizes the film forming chamber 1, an exhaust pipe 11 having one end connected to the pressure pump 13 and the other end connected to the film forming chamber 1, and an exhaust pipe 11. And a pressure adjusting valve 12 for adjusting the pressure in the film forming chamber 1. The exhaust means 14 exhausts the inside of the film forming chamber 1 through the exhaust pipe 11 by the pressure pump 13 and can adjust the inside of the film forming chamber 1 to a predetermined pressure by the pressure adjusting valve 12. .

  The CVD apparatus 100 further includes a temperature control unit 15 that controls the temperature of the film formation target substrate S placed on the substrate tray 10.

   The temperature control means 15 includes, for example, a temperature adjusting unit 151 that adjusts power supplied from a power source (not shown) such as a system power supply, and supplies the power adjusted by the temperature adjusting unit 151 to the heat source 2. That is, the temperature control means 15 controls the amount of heat generated by the heat source 2 by adjusting the power from the power source so as to supply predetermined power to the heat source 2.

  By providing such a configuration, the CVD apparatus 100 can control the film formation target substrate S placed on the substrate tray 10 to a predetermined temperature by infrared radiation (radiation) from the heat source 2. .

  In the CVD apparatus 100 described above, when a film formation target substrate (for example, a silicon wafer) S is formed, about 100 film formation target substrates S are formed from the outside of the film formation chamber 1 by a transfer means (not shown). The placed substrate tray 10 is carried in and placed on the temperature equalizing member 4. At this time, the film formation target substrate S is heated to a predetermined temperature (for example, about 500 ° C.) by the heat source 2 whose heat generation amount is adjusted by the temperature adjustment unit 151.

   That is, when the heat source 2 generates heat, the temperature equalizing member 4 is heated by infrared radiation (radiation), and the temperature of the temperature equalizing member 4 rises. When the temperature of the temperature uniformizing member 4 rises, the temperature uniformizing member 4 generates heat. Due to the heat generated by the temperature uniformizing member 4, the substrate tray 10 in contact with the temperature uniformizing member 4 rises with a uniform temperature distribution. The film formation target substrate S supported by the substrate tray 10 is heated. As a result, the temperature distribution of the heated film formation target substrate S can be made uniform as a result.

After the substrate tray 10 is mounted on the temperature uniformizing member 4, silane (SiH ₄ ), ammonia (NH ₃ ), nitrogen (N ₂ ) is supplied to the first electrode 6, and the mixed gas supplied to the first electrode 6 is ejected from the first electrode 6 into the film forming chamber 1 uniformly and in the form of a shower.

  Next, the mixed gas supplied into the film forming chamber 1 by the pressure pump 13 is exhausted through the exhaust pipe 11 while the opening of the pressure adjusting valve 12 is adjusted, so that the pressure in the film forming chamber 1 is increased. Is adjusted to a predetermined pressure (for example, about 100 Pa).

  Further, a high frequency power having a predetermined frequency (for example, 13.56 MHz) is supplied from the RF power source 51 to the first electrode 6, and the mixed gas in the film forming chamber 1 is brought into a plasma state to react on the film formation target substrate S. A reactive film (for example, a silicon nitride film) is formed.

  When the above-described series of film forming processes is continuously repeated, a reaction product film is deposited on the inner wall 1 ′ of the film forming chamber 1 and the components in the film forming chamber 1. For this reason, the work of periodically removing the reaction product film adhering to the inner wall 1 ′ of the film forming chamber 1 and the components in the film forming chamber 1 is performed.

  In this respect, the CVD apparatus 100 shown in FIG. 1 has the following advantages because the heat capacity of the heat source 2 is smaller than that of the heater block of the conventional apparatus.

  That is, in the operation of removing the reaction product film adhering to the film forming chamber 1, the time from when the heat source 2 is de-energized until the temperature of the heat source 2 or the components in the film forming chamber 1 decreases to some extent is shortened. Further, after the removal of the reaction product film in the film formation chamber 1 is completed, the time from when the heat source 2 is energized until the film formation target substrate S reaches a predetermined temperature is shortened.

  As described above, according to the CVD apparatus 100, the heat capacity of the heat source 2 can be reduced as compared with the case of the heater block of the conventional apparatus, so that the time required for the temperature decrease and the temperature increase of the heat source 2 can be shortened. It is possible to shorten the waiting time in the operation such as the operation of removing the reaction product film adhering to the inside of the chamber 1. Therefore, the waiting time in an operation that does not contribute to the film formation such as the operation of removing the reaction product film can be reduced, and thereby the operating rate of the CVD apparatus 100 can be improved.

  Here, if the heat capacity of the heat source 2 is only made smaller than in the case of the heater block of the conventional apparatus, the above-described temperature equalizing member 4 is unnecessary, but the substrate tray 10 on which the deposition target substrate S is placed. Is placed on the temperature equalizing member 4 so that the temperature distribution of the deposition target substrate S placed on the substrate tray 10 is made uniform compared to the case where the infrared rays emitted from the heat source 2 are directly radiated to the substrate tray 10. Thus, uniform film formation on the film formation target substrate S becomes possible.

  Furthermore, since it is not the structure which provides a cooling means like the conventional apparatus, a structure is simple and it is cheap.

  In the present embodiment, the temperature equalizing member mounts the substrate tray 10 on the first surface 4 a of the temperature equalizing member 4 and forms the film formation target substrate S supported by the tray 10. Therefore, it is not necessary to use a member for holding the substrate tray 10 on the temperature uniformizing member 4, and it becomes possible to form a film formation target with a simpler and less expensive configuration.

  In the present embodiment, the temperature equalizing member 4 is preferably formed of a material having a thermal conductivity larger than that of the substrate tray 10. By doing so, the film formation target substrate S supported by the substrate tray 10 can be heated more uniformly, and the film formation target S can be formed evenly.

  Here, the substrate tray 10 is formed of a resin material having excellent heat resistance. As this resin material, for example, a carbon resin can be used. The temperature equalizing member 4 is made of a metal material (specifically, copper). The temperature equalizing member 4 may be formed of an alloy containing copper, iron, or an alloy containing iron.

  Since the temperature equalizing member 4 is formed of a material having a high thermal conductivity such as a metal material, the electric conductivity is also increased. For this reason, the potential of the film formation target substrate S on the substrate tray 10 is uniform. The nature will also improve.

  Further, in the case of only the substrate tray 10, the interval between the first electrodes 6 is likely to be different for each of the plurality of substrates S placed due to the deflection of the tray 10, but the deflection of the tray 10 is effective as the temperature equalizing member 4. By using a material and / or thickness that can be prevented, it is possible to make the distance from the first electrode 6 constant.

  Thus, by improving the uniformity of the temperature, the potential, and the spacing between the electrodes, it is possible to realize uniform film formation as in the case of using a conventional heater block.

  The thickness of the substrate tray 10 is not limited thereto, but can be about 5 mm to 20 mm. The thermal conductivity of the substrate tray 10 is not limited thereto, but can be about 20 W / (m · K) to 70 W / (m · K).

  Further, the thickness of the temperature uniformizing member 4 is not limited to this, but may be about 1 mm to 5 mm. The thermal conductivity of the temperature uniformizing member 4 is not limited to this, but can be about 50 W / (m · K) to 500 W / (m · K).

The area of the first plane 10a of the substrate tray 10 is not limited thereto, but can be about 2m ^{2 to} 3m ^2, and the area of the first plane 4a of the temperature uniformizing member 4 is not limited thereto, 3m ² ~4m ² extent can be exemplified.

  In addition, the distance of the space Q (that is, the distance between the temperature uniformizing member 4 and the heat source 2) is not limited to this, but may be about 10 mm to 500 mm.

In the CVD apparatus 100 shown in FIG. 1, the temperature uniformizing member 4 also serves as an electrode, but an electrode may be provided separately from the temperature uniformizing member 4. The CVD apparatus of the present invention can of course be applied to an apparatus in which no electrode is provided.
(Example)
Since the time required for temperature decrease and temperature increase was measured for the CVD apparatus 100 according to the embodiment of the present invention, the measurement results are shown below together with a comparative example of a conventional CVD apparatus using a heater block.

In the case of a conventional CVD apparatus using a heater block: about 11 hours In the case of the CVD apparatus of the present invention: about 3 hours As described above, the CVD apparatus of the present invention has a lower temperature than the conventional CVD apparatus. It was also found that the time required for the temperature increase can be greatly shortened.

1 is a side view schematically showing an embodiment of a CVD apparatus according to the present invention. It is a side view which shows schematically the conventional CVD apparatus using a heater block.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Film formation container 2 Heat generating source 4 Temperature equalization member 10 Tray 100 CVD apparatus S Film formation target object

Claims (8)

A CVD apparatus for heating a film formation target housed in a film formation container and forming a film on the heated film formation target object,
A heating source for heating the film formation object on the side opposite to the film formation object supported by the tray in the film formation container;
The temperature of the film forming object supported by the tray is made uniform while being positioned between the tray and the heat source and in contact with the tray and with a space between the tray and the heat source. A CVD apparatus comprising a temperature uniformizing member. The temperature equalizing member has a contact surface that contacts the tray, and is disposed above the heat source so that the contact surface is horizontal,
The CVD apparatus according to claim 1, wherein the tray is mounted on the contact surface of the temperature equalizing member to form a film formation target object supported by the tray.   The CVD apparatus according to claim 1 or 2, wherein the temperature of the film formation target supported on the tray is controlled by radiation of electromagnetic waves including infrared rays from the heat source.   The CVD apparatus according to claim 3, wherein the heat source is a heating wire.   5. The CVD apparatus according to claim 1, wherein the temperature equalizing member is made of a material having a thermal conductivity larger than that of the tray.   6. The CVD apparatus according to claim 1, wherein the temperature uniformizing member is made of a metal material.   The CVD apparatus according to claim 6, wherein the metal material is copper or an alloy containing copper.   The CVD apparatus according to claim 6, wherein the metal material is iron or an alloy containing iron.

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