JP2008277454A - Manufacturing method of solid-state image pickup device module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state image pickup device module capable of laminating a solid-state image pickup device chip and a transparent substrate piece together with no deviation while maintaining a certain manufacture efficiency. <P>SOLUTION: The manufacturing method of a solid-state image pickup device module includes a laminating process (S21) for laminating a plurality of solid-state image pickup device chips temporarily secured to a first adhesive member and a transparent substrate piece temporarily secured to a second adhesive member together to form a laminate, a first peeling process (S22-2) for peeling the second adhesive member from the laminate, and a second peeling process (S23-2) for laminating the first adhesive member from the laminate where the second adhesive member has been peeled. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a solid-state image sensor module in which another member such as a transparent substrate is attached to a solid-state image sensor formed on a substrate to form a module.

  Conventionally, a manufacturing process of a solid-state imaging device module includes a transparent substrate arrangement process. The transparent substrate disposing step is a step of disposing a sealing material around the semiconductor region of the solid-state imaging device and disposing a transparent substrate (for example, glass) on the sealing material so as to face the solid-state imaging device. The following three methods have already been proposed for this transparent substrate placement step.

  In the first technique, a wafer having a plurality of solid-state image sensors is diced in advance to become individual solid-state image sensor chips. At the same time, the transparent substrate is cut to form an individual transparent substrate so as to have an appropriate size when placed on the solid-state imaging device. And after apply | coating a sealing material around the semiconductor area | region of a solid-state image sensor, a solid-state image sensor chip | tip and an individual transparent substrate are arrange | positioned and bonded together facing each other (facing in a one-to-one state).

  The second method is the same as the first method in that the transparent substrate is cut to form an individual transparent substrate so as to have an appropriate size when placed on the solid-state imaging device. However, in the second method, the wafer having the solid-state imaging device is diced as in the first method, so that the individual solid-state imaging device chip is not formed and the wafer is left as it is. Then, after applying a sealing material around the semiconductor region of each solid-state image sensor formed on the wafer, each solid-state image sensor formed on the wafer and the corresponding individual transparent substrate are arranged to face each other individually. Then, the wafer is diced and finally the wafer is diced.

In the third method, a wafer on which a plurality of solid-state imaging elements are formed and a wafer-like transparent substrate (single transparent substrate) are prepared. Then, a sealing material is arranged around the semiconductor region of each solid-state image sensor formed on the wafer, and the solid-state image sensor and the transparent substrate are bonded together in a wafer shape. Finally, the solid-state image sensor and It separates into pieces by dicing the transparent substrate at once. The third technique is disclosed in Patent Document 1, for example.
JP 2004-296738 A (released on October 21, 2004)

  Comparing each method, in the first method and the second method, the solid-state imaging device chip and the individual transparent substrate are individually bonded together. On the other hand, in the third method, a wafer on which a plurality of solid-state image sensors are formed and a wafer-like transparent substrate are bonded together. As described above, in the first method and the second method, the transparent substrates are not bonded together (a wafer-like transparent substrate is not used). In addition, the solid-state imaging device chip and the individual transparent substrate need to be individually bonded so as not to cause positional displacement. Therefore, in the first method and the second method, the tact time is inevitably long, and the production efficiency is very poor.

  On the other hand, in the third method, since the solid-state imaging device and the transparent substrate are bonded together in the form of a wafer, a step (cutting step) for cutting the solid-state imaging device and the transparent substrate together is necessary. However, it has been found that this cutting process is not easy and cannot be appropriately cut when actually performed.

  As described above, the first method and the second method have a problem that the manufacturing efficiency is low, and the third method cannot be applied to an actual manufacturing process.

  The present invention has been made in view of the above-described problems, and the object thereof is to paste a solid-state imaging device chip and an individual transparent substrate so as not to cause misalignment with each other while maintaining a certain manufacturing efficiency. Another object of the present invention is to provide a method for manufacturing a solid-state imaging device module that can be used.

In order to solve the above problems, a method for manufacturing a solid-state imaging device module of the present invention includes:
A temporary fixing step of temporarily fixing a plurality of solid-state imaging element chips to the first adhesive member;
A dividing step of dividing the transparent substrate temporarily fixed to the second adhesive member, and forming a plurality of individual transparent substrates corresponding to each of the plurality of solid-state imaging element chips;
A pasting step of pasting a plurality of solid-state imaging device chips temporarily fixed to the first adhesive member and an individual transparent substrate temporarily fixed to the second adhesive member to form a laminate;
A first peeling step of peeling the second adhesive member from the laminate,
It has the 2nd peeling process which peels a 1st adhesive member further from the laminated body which peeled the 2nd adhesive member, It is characterized by the above-mentioned.

  According to the above invention, in the dividing step, the individual transparent substrate is formed by dividing the transparent substrate. Moreover, the transparent substrate is divided in a state of being temporarily fixed to the second adhesive member. Thereby, an individual transparent substrate can be arrange | positioned in the state temporarily fixed to the suitable position of the 2nd adhesion member. That is, in the dividing step, the formation of the individual transparent substrate and the temporary fixing of the individual transparent substrate to the second adhesive member can be performed simultaneously. A plurality of individual transparent substrates can also be formed from a single transparent substrate.

  Further, according to the above invention, in the attaching step, the plurality of solid-state imaging device chips temporarily fixed to the first adhesive member and the plurality of individual transparent substrates temporarily fixed to the second adhesive member are bundled. Paste. Here, the solid-state imaging device chip is temporarily fixed to the first adhesive member, and the individual transparent substrate is temporarily fixed to the second adhesive member. For this reason, positional displacement does not occur in the solid-state imaging device chip and the individual transparent substrate. Therefore, in the attaching step, the solid-state imaging device chip and the individual transparent substrate can be aligned together.

  Furthermore, according to said invention, after peeling a 2nd adhesive member by the 1st peeling process from the laminated body formed at the sticking process, a 1st adhesive member is peeled by a 2nd peeling process. That is, the second adhesive member is peeled in a state where the solid-state imaging element chip is temporarily fixed by the first adhesive member. For this reason, when the second adhesive member is peeled off, there is no positional deviation in the solid-state imaging device chip.

  As described above, according to the above-described invention, the individual transparent substrate can be collectively attached to each solid-state image sensor chip, and the solid-state image sensor chip is temporarily fixed to the first adhesive member. 2 The adhesive member can be peeled off. Therefore, the solid-state imaging device chip and the individual transparent substrate can be pasted so as not to be misaligned with each other while maintaining a certain manufacturing efficiency.

  In the method for manufacturing a solid-state imaging element module according to the present invention, it is preferable that in the temporary fixing step, a substrate having a plurality of solid-state imaging elements temporarily fixed to the first adhesive member is divided to form a plurality of solid-state imaging element chips. .

  According to said invention, formation of a solid-state image sensor chip | tip and temporary fixation to the 1st adhesion member of the solid-state image sensor chip | tip can be performed simultaneously. Therefore, the production efficiency of the temporary fixing process can be further increased.

  In the method for manufacturing a solid-state imaging element module according to the present invention, at least one of the first adhesive member and the second adhesive member may include a foam material, and the adhesive force may be reduced due to foaming of the foam material.

  According to the above invention, the first adhesive member and / or the second adhesive member has a reduced adhesive force due to foaming of the foam material. Thereby, while being temporarily fixable with moderate adhesive force, it can also peel easily.

  In the method for manufacturing a solid-state imaging device module of the present invention, one of the first adhesive member and the second adhesive member has a lower adhesive force as the temperature rises, and the other has a lower adhesive force due to light irradiation. There may be.

  According to said invention, the conditions which reduce the adhesive force of a 1st adhesive member and the conditions which reduce the adhesive force of a 2nd adhesive member differ. In other words, the first adhesive member and the second adhesive member are peeled by different external energy. For this reason, in the first peeling step, the adhesive force of the second adhesive member can be selectively reduced without reducing the adhesive force of the first adhesive member. Therefore, it is possible to reliably prevent the positional deviation of the solid-state imaging element chip that occurs when the second adhesive member is peeled off.

  In the method for manufacturing a solid-state imaging element module according to the present invention, both the first adhesive member and the second adhesive member may have an adhesive force that decreases as the temperature increases.

  According to said invention, the adhesive force of a 1st adhesive member and a 2nd adhesive member can control all by temperature. Thereby, both a 1st peeling process and a 2nd peeling process can be performed by temperature control. Therefore, the first peeling step and the second peeling step can be easily performed.

In the manufacturing method of the solid-state image pickup device module of the present invention, in the attaching step, a plurality of solid-state image pickup device chips are provided via the first sealant whose curing temperature is lower than the temperature at which the first adhesive member is peeled off in the second peeling step. And a piece of transparent substrate,
You may have the 1st hardening process which hardens a 1st sealing compound between a 1st peeling process and a 2nd peeling process.

  According to said invention, the hardening temperature of the 1st sealing agent which affixes a solid-state image sensor chip | tip and a piece transparent substrate is lower than the temperature which peels a 1st adhesion member by a 2nd peeling process. In other words, the curing temperature of the first sealing agent is lower than the temperature at which the adhesive force of the first adhesive member is lost. Thereby, in the 1st hardening process, when the 1st sealant is hardened, the 1st adhesion member is not exfoliated. That is, when the first sealing agent is cured, the state in which the solid-state imaging element chip is temporarily fixed to the first adhesive member can be reliably maintained.

In the manufacturing method of the solid-state imaging device module of the present invention, in the pasting step, a plurality of solid-state imaging device chips are provided via the second sealing agent having a curing temperature lower than the temperature at which the second adhesive member is peeled in the first peeling step. And a piece of transparent substrate,
You may have the 2nd hardening process which hardens a 2nd sealing agent before a 1st peeling process.

  According to said invention, the hardening temperature of the 2nd sealing agent which affixes a solid-state image sensor chip | tip and a piece transparent substrate is lower than the temperature which peels a 2nd adhesion member by a 1st peeling process. In other words, the curing temperature of the second sealing agent is lower than the temperature at which the adhesive force of the second adhesive member is lost. The second curing step is performed before the first peeling step. Thereby, in the 2nd hardening process, when the 2nd sealant is hardened, the 2nd adhesion member is not exfoliated. Similarly, the first adhesive member is not peeled off. For this reason, the positional relationship between the solid-state imaging device chip and the individual transparent substrate can be fixed by curing the second sealing agent before the first peeling step and the second peeling step. Accordingly, it is possible to reliably prevent the positional deviation of the solid-state imaging element chip and the positional deviation of the solid-state imaging element chip itself that occur when the first adhesive member and the second adhesive member are peeled off.

  As described above, according to the present invention, a plurality of solid-state image sensor chips are temporarily fixed by temporarily fixing a plurality of solid-state image sensor chips to the first adhesive member, and a transparent substrate temporarily fixed to the second adhesive member. Are divided so as to correspond to each other, forming a plurality of individual transparent substrates, a plurality of solid-state imaging device chips temporarily fixed to the first adhesive member, and an individual transparent temporarily fixed to the second adhesive member The first adhesive member is further bonded from the pasting step of pasting the substrate and forming the laminate, the first peeling step of peeling the second adhesive member from the laminate, and the laminate of peeling the second adhesive member. A second peeling step for peeling. Accordingly, the individual transparent substrate can be attached to each solid-state imaging element chip at a time, and the second adhesive member can be peeled in a state where the solid-state imaging element chip is temporarily fixed to the first adhesive member. . Therefore, the solid-state imaging device chip and the individual transparent substrate can be pasted so as not to be misaligned with each other while maintaining a certain manufacturing efficiency.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  The solid-state imaging device module manufactured according to the present invention is a camera module mounted on an electronic device capable of photographing such as a mobile phone with a camera, a digital still camera, and a security camera.

  FIG. 1 is a flowchart showing a method for manufacturing a solid-state imaging device module according to the present invention. As shown in FIG. 1, the manufacturing method of the solid-state image sensor module of the present invention includes a wafer processing step for processing a substrate having a plurality of solid-state image sensors, and a transparent substrate for processing a transparent substrate to form an individual transparent substrate. It includes a processing step and a modularization step in which the wafer processed by these steps and the individual transparent substrate are attached to form a module. Hereinafter, each step will be described in detail.

(Wafer processing process)
First, the wafer processing process will be described. The wafer processing step is a step of processing a wafer (substrate) having a plurality of solid-state imaging elements. FIG. 2A and FIG. 2B are diagrams showing the wafer processing process in detail. 2A is a flowchart of the wafer processing step of FIG. 1, and FIG. 2B shows a cross-sectional view of the wafer and the like corresponding to the main steps among the steps of FIG. 2A. .

  First, in the solid-state imaging device forming process, for example, a solid-state imaging device 11 and terminals 12 based on an existing technology such as an image sensor such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) are formed on a wafer 10 made of a silicon material. Is formed (S1). Since this process can use a well-known thing, detailed description is abbreviate | omitted.

  Note that the solid-state imaging element 11 does not mean a single photodiode. A transparent substrate to be described later may be disposed in a region where a plurality of photodiodes are aligned. Therefore, when referring to the solid-state imaging device 11, it is sufficient to include at least a region where photodiodes are aligned, and it does not matter whether or not other control portions are included.

  Then, the back surface of the wafer 10 is polished for the purpose of reducing the thickness of the solid-state imaging device module (S2). Since a known polishing technique can be used for this, no particular explanation will be given. As a result of the polishing, the thickness of the wafer 10 which is about 700 μm is reduced to about 100 to 300 μm.

  Next, a dicing process is performed along the chip separation region of the wafer 10 to separate the individual solid-state image pickup device chips 38 (S33: dicing step). For example, a dicer is used as the cutting device 32. And it wash | cleans in order to remove the dust etc. accompanying dicing (not shown).

  Next, the solid-state image pickup device chips 38 divided individually are inspected to extract only good products, and only the good products are sorted and arranged again in a wafer shape (S34: chip sorting step; temporary fixing step). In this chip sorting step (S34), only the solid-state image sensor chips 38 determined to be non-defective by inspection are sorted by the sorter, and the solid-state image sensor chips 38 determined to be non-defective are aligned on the dummy substrate 51 to form a wafer. Deploy. FIG. 2C is a diagram schematically showing the situation of the wafer 10 from the dicing process (S33) to the chip sorting process (S34). As shown in FIG. 2C, first, the wafer 10 is cut to form the solid-state imaging element chip 38. Then, only the solid-state imaging device chips 38 determined to be non-defective are rearranged, and the wafer 10 is formed again. At this time, the dummy substrate 51 and the solid-state imaging device chip 38 are pasted by the adhesive member 60. The adhesive member 60 is peeled off from the solid-state imaging device chip 38 in a modularization process described later. That is, in the chip sorting process, the plurality of solid-state imaging element chips 38 are temporarily fixed to the adhesive member 60. The details of the adhesive member 60 will be described later.

  As described above, in the present embodiment, in the chip sorting process, only the solid-state imaging device chips 38 determined as non-defective products are extracted and sorted. That is, the defect of the solid-state imaging device chip 38 caused by the process before the chip sorting process is removed by the chip sorting process. Thereby, the defect of the solid-state image sensor chip 38 does not occur in principle after the chip sorting process. Therefore, it is possible to improve the throughput for manufacturing the non-defective solid-state image sensor module 100.

  In the chip sorting process, it is possible to omit the process of extracting only non-defective products. That is, in the chip sorting process, at least a plurality of solid-state image sensor chips 38 may be aligned with the adhesive member 60 and temporarily fixed.

  Further, when the step of extracting only non-defective products in the chip sorting process is omitted, the wafer 10 having the plurality of solid-state imaging elements 11 temporarily fixed to the adhesive member 60 is divided to form a plurality of solid-state imaging element chips 38. preferable. Thereby, formation of the solid-state image sensor chip 38 and temporary fixing of the solid-state image sensor chip 38 to the adhesive member 60 can be performed simultaneously. Therefore, the manufacturing efficiency in this step can be further increased.

  In the present embodiment, an example in which non-defective solid-state imaging element chips 38 are aligned in a wafer shape is shown, but the shape is not limited to a disk shape. That is, in the subsequent modularization process, any shape can be used as long as the substrate having the solid-state imaging device and the transparent substrate can be easily opposed to each other. For example, this shape may be a rectangular shape or another polygonal shape.

  Next, after removing a foreign substance from the wafer 10 (solid-state imaging device chip 38) through a chip cleaning step (S35), a sealing agent (first sealing agent) 13 is attached on the wafer 10 (S4: sealing agent application). Process). The sealing agent 13 is disposed so as to cover (enclose) at least the entire region where the solid-state imaging device 11 is formed on the surface of the wafer 10 where the solid-state imaging device 11 is formed (S4). The process is performed by applying the sealing agent 13 or attaching the sealing agent 13 made of a sheet-like material.

  Then, in order to pattern the sealant 13 on the wafer 10, an exposure process (S5: sealant exposure process) is performed using a known photolithography technique, and then a film peeling process and a developing process are performed (S6: film peeling). Development process). As a result, the convex sealing agent 13 to be bonded to the individual transparent substrate when the individual transparent substrate is attached later can be arranged in a pattern around each solid-state imaging element 11. More precisely, the sealing agent 13 has a labyrinth-shaped air hole that prevents the inner surface of the transparent substrate 20 from being fogged outside the solid-state imaging device 11 and inside the external connection terminal 12. The portions other than the air holes are formed to have a substantially uniform height so as to be sealed. In this way, the wafer processing process ends.

  In this way, in the wafer processing step, a plurality of solid-state imaging element chips 38 temporarily fixed to the adhesive member 60 are formed.

(Transparent substrate processing process)
Next, the transparent substrate processing step will be described. The transparent substrate processing step is a step of processing the transparent substrate to form an individual transparent substrate. FIG. 3A to FIG. 3C are diagrams showing the transparent substrate processing step in detail. 3A is a flowchart of the transparent substrate processing step of FIG. 1, and FIG. 3B is a cross-sectional view of the transparent substrate 20 and the like corresponding to the main steps among the steps of FIG. 3A. Show.

  First, in order to easily arrange the transparent substrate 20 when facing the wafer 10, it is cut into a circle having substantially the same outer periphery as the wafer 10 described above (S11: shape adjustment cutting step). FIG. 3C is a perspective view of the transparent substrate 20 before and after the shape adjustment cutting step (S11). In FIG. 3C, the transparent substrate 20 is actually left inside the solid line, and the broken line portion is a portion to be cut. That is, by this step, the rectangular transparent substrate 20 is cut to form a circular transparent substrate 20. As described above, the transparent substrate 20 is cut into a shape substantially the same as that of the wafer 10, and as a result, it can be processed using a general-purpose chuck or transfer device. In addition, as the transparent substrate 20, glass, quartz, or transparent resin can be illustrated.

  Next, in order to adjust the state of the edge of the cut transparent substrate 20, a process of flattening the end face is performed (S12: end face processing step). Then, an IR cut coating 21 for reducing the infrared transmittance to the solid-state imaging device 11 is formed on the transparent substrate 20 (S13: IR cut coating step). For this IR cut coating step, a known technique such as sputtering deposition can be used.

  The IR cut coating process is preferably provided before the transparent substrate cutting process (S15) described later. When the IR cut coating 21 is to be applied after the transparent substrate 20 is divided, when a sheet-like material is used as the IR cut coating 21, a step of further cutting the sheet-like IR cut coating 21 is required. Further, when the IR cut coating 21 is formed by sputtering vapor deposition, there arises a problem that the deposited material of the IR cut coating 21 enters the cut portion.

  Further, it is desirable that the IR cut coating process is arranged on the entire surface of the transparent substrate 20. If the IR cut coating 21 is arranged on the entire surface, the alignment as in the case of partial arrangement becomes unnecessary, and the process can be further simplified. Further, it is possible to reduce the defect rate when the IR cut coating 21 is applied. In the following description, the transparent substrate 20 may be described including the one provided with the IR cut coating 21. In the IR cut coating process of the present embodiment, the IR cut coating 21 having the same shape as the transparent substrate 20 is formed on the entire surface of the transparent substrate 20 by vapor deposition.

  Next, the adhesive member (second adhesive member) 27 formed on one surface of the support member 22 is attached to the formation surface of the IR cut coating 21 (on the IR cut coating) (S14: support member application step). As a result, the IR cut coating 21 is sandwiched between the adhesive member 27 (support member 22) and the transparent substrate 20. The adhesive member 27 has a purpose of holding the individual transparent substrate 25 and the IR cut coating 21 cut into individual pieces in a subsequent process in a temporarily fixed state. In addition, as the support member 22, what formed the adhesive member 27 in the single side | surface of what formed the board | plate material about 300-1000 micrometers into the same shape as the transparent substrate 20, for example can be used. Further, if a transparent material such as glass, quartz, transparent resin or a composite material thereof is used for the support member 22 and a transparent material is used for the adhesive member 27, the alignment mark of the wafer 10 can be confirmed through the transparent substrate 20. This is preferable because it facilitates alignment. Note that the alignment referred to here is alignment in the horizontal direction (plane direction; XY direction).

  As described above, in the support member attaching step and the transparent substrate cutting step, the transparent substrate 20 temporarily fixed to the support member 22 is divided so as to correspond to the plurality of solid-state image sensor chips 38, and the plurality of individual transparent substrates 25 are separated. This is a dividing step for forming.

  Next, the transparent substrate 20 temporarily fixed to the adhesive member 27 and the IR cut coating 21 are cut into a predetermined shape by the cutting device 23 to form the individual transparent substrate 25 (S15: transparent substrate cutting step). Here, as the cutting device 23, a dicer, a slicer, a wire saw, a laser, or the like can be used. Further, the cutting depth at this time is set to a depth at which the transparent substrate 20 is completely cut and a depth at which the adhesive member 27 is not completely cut. As a result, it is possible to maintain a state in which the plurality of individual transparent substrates 25 are temporarily fixed to the adhesive member 27. Further, the plate member of the support member 22 can be reused without being cut. Moreover, the predetermined shape in this cutting | disconnection has a magnitude | size equivalent to the outer periphery of the sealing agent 13 patterned, for example.

  As described above, in the present embodiment, the IR cut coating 21 having the same shape as the transparent substrate 20 is formed on the transparent substrate 20 in the IR cut coating step (S13). Therefore, in the transparent substrate cutting step (S15), the individual transparent substrate 25 on which the IR cut coating 21 is formed can be formed by cutting the transparent substrate 20 on which the IR cut coating 21 is formed. Therefore, it is possible to easily form the individual transparent substrate 25 on which the IR cut coating 21 is formed, rather than forming the IR cut coating 21 on each of the individual transparent substrates 25. In addition, since the IR cut coating 21 is collectively formed on the transparent substrate 20, it is possible to improve the processing speed and the yield.

  Next, in order to remove the cullet and particles generated by the transparent substrate cutting step (S15), the transparent substrate 20 is cleaned (S16: transparent substrate cleaning step). And the support tape 24 is affixed on the surface on the opposite side to the IR cut coating 21 arrangement | positioning surface of the support member 22 (S17: support tape sticking process). In this way, the transparent substrate processing step is completed. A support ring 26 that is a metal frame is provided on the same surface as the transparent substrate 20 attached to the support tape 24. The processed transparent substrate 20 is disposed inside the support ring 26.

  The support tape 24 is made of a material that can withstand the temperature of the atmosphere in the subsequent wafer-transparent substrate bonding step (S21) (in this embodiment, it is performed in an atmosphere of about 60 to 120 ° C.). Examples of this material include PE (Poly Ethylene), PP (Poly Propylene), and PET (Poly Ethylene Terephthalate), but PET is most suitable in consideration of temperature and external factors. Further, the above-described support tape 24 is fixed to the inside of a support ring 26 that is a metal frame. For the surface of the support tape 24, the same material as the adhesive member 27 described for bonding the support member 22 and the transparent substrate 20 can be used.

  Thus, in the transparent substrate processing step, a plurality of individual transparent substrates 25 temporarily fixed to the adhesive member 27 are formed.

(Modularization process)
Next, the modularization process will be described. In the modularization process, the solid-state imaging device chip 38 (FIG. 2) temporarily fixed to the adhesive member 60 formed by the wafer processing process and the individual piece transparently temporarily fixed to the adhesive member 27 formed by the transparent substrate processing process. In this step, the substrate 25 (FIG. 3) is attached to form a module. FIG. 4A and FIG. 4B are diagrams showing the modularization process in detail. 4A is a flowchart of the modularization process of FIG. 1, and FIG. 4B is a main cross-sectional view in each process of FIG. 4A.

  First, the wafer 10 formed by the wafer processing step (simply referred to as the wafer 10) and the transparent substrate 20 formed by the transparent substrate processing step (the individual transparent substrate 25; simply referred to as the transparent substrate 20) are aligned. To face each other. At this time, the IR cut coating 21 arrangement surface of the transparent substrate 20 and the solid-state image sensor 11 arrangement surface of the wafer 10 are opposed to each other, and each individual transparent substrate is applied to the sealing agent 13 patterned on each solid-state image sensor 11. Positioning is performed so that 25 is appropriately arranged (S21: wafer-transparent substrate bonding step). In this step, it is desirable to perform this alignment with high accuracy. Therefore, for example, the position is adjusted using a microscope so that the marking on the transparent substrate 20 matches the marking on the wafer 10. As a result, the wafer 10 and the transparent substrate 20 can be aligned and pasted with high accuracy. The conditions of this step (atmosphere conditions) are, for example, pressure bonding of 0.05 to 0.5 Mpa for 1 to 600 seconds under a substantially vacuum state of 100 to 300 Pa and a temperature of 60 to 120 ° C. Thereby, the laminated body A which affixed the wafer 10 and the transparent substrate 20 is formed.

  Next, the support tape 24 is peeled from the laminate A together with the support ring 26 (S22-1: support tape peeling step).

  Next, the adhesive force of the adhesive member 27 that temporarily fixes the transparent substrate 20 is reduced (or lost), and the adhesive member 27 formed on the IR cut coating 21 is peeled off together with the support member 22 (S22-2: transparent). Substrate / adhesive member peeling step; first peeling step). Next, the sealing agent 13 is cured to fix the solid-state imaging device 11 and the transparent substrate 20 (S23: sealing agent curing step; first curing step). Next, the adhesive force of the adhesive member 60 for temporarily fixing the wafer 10 is reduced (or lost), and the adhesive member 60 is peeled together with the dummy substrate 51 from the wafer 10 from which the adhesive member 27 has been peeled off (S23-2: solid-state imaging). Element side temporary fixation elimination process). As a result, the chip B in which the temporary fixing of the wafer 10 by the adhesive member 60 and the temporary fixing of the transparent substrate 20 by the adhesive member 27 is eliminated is obtained. Further, the solid-state imaging device 11 of the chip B is in a state in which the periphery is surrounded by the sealing agent 13 except for the air holes, and the transparent substrate 20 is disposed on the opposite surface.

  As will be described later, the pressure-sensitive adhesive member 60 (first pressure-sensitive adhesive member) is not peeled off during the transparent substrate / pressure-sensitive adhesive member peeling step (S22-2; first peeling step), and the solid-state imaging element side temporary fixing elimination step ( S23-2; second peeling step). For this reason, the transparent substrate / adhesive member peeling step (S22-2) is performed in a state where the wafer 10 is temporarily fixed by the adhesive member 60. Therefore, when the adhesive member 27 is peeled in the transparent substrate / adhesive member peeling step, the wafer 10 is not displaced.

  Next, each chip B is bonded and fixed from the chip B to the printed circuit board 33 in which terminals for connecting to the wiring and the terminal 12 on the wafer 10 are previously formed (S26: die bonding step). Thereafter, the terminal 33a on the printed circuit board 33 side and the terminal 12 on the chip B side are connected by the wire 34 (S27: wire bonding step). As a result, the chip B and the printed circuit board 33 are electrically connected to each other and operate appropriately.

  Next, the module housing 35 is attached to the outside of the terminal 33a on the printed circuit board 33 side. The module housing 35 has a function of supporting the lens housing 37 holding the lens 36, and the lens 36 and the IR cut coating 21 arrangement surface of the transparent substrate 20 have a predetermined distance. It is held in an opposed state (S28: module assembly process). Finally, the printed circuit board 33 is divided for each solid-state image sensor module by broken lines in the figure. Thereby, each solid-state image sensor module 100 can be obtained.

  In such a manufacturing method of the solid-state imaging device module 100, it is important to increase the manufacturing efficiency as much as possible and to paste the solid-state imaging device 11 and the individual transparent substrate 25 so as not to be misaligned.

  Therefore, in the present embodiment, as described above, the solid-state imaging device chip 38 (wafer 10) is attached to the adhesive member (first adhesive member) 60, the transparent substrate 20 is temporarily attached to the adhesive member (second adhesive member) 27, respectively. It is fixed. Moreover, the adhesive member 60 and the adhesive member 27 are finally peeled from the solid-state imaging device chip 38 and the transparent substrate 20 (S22-2, S23-2).

  Therefore, the adhesive member 60 and the adhesive member 27 may satisfy the following conditions. That is, the adhesive member 60 only needs to be peeled off when the adhesive member 27 is peeled off (transparent substrate adhesive member peeling step). In other words, the adhesive member 60 only needs to lose the adhesive force (fixing force) when a higher external force (external energy) is applied than when the adhesive member 27 is peeled off.

As such an adhesive member 60 and an adhesive member 27, for example, it is preferable to select one that satisfies the following conditions.
(A) One of the pressure-sensitive adhesive member 60 and the pressure-sensitive adhesive member 27 has a pressure-sensitive adhesive force that decreases as the temperature rises, and the other has a pressure-sensitive adhesive force that decreases due to light irradiation (for example, ultraviolet light irradiation).
(B) Both the adhesive member 60 and the adhesive member 27 are those whose adhesive force decreases as the temperature rises.
(C) At least one of the pressure-sensitive adhesive member 60 and the pressure-sensitive adhesive member 27 includes a foam material (foaming agent), and the pressure-sensitive adhesive force is reduced by foaming of the foam material due to temperature rise or light irradiation.
In addition, the adhesive member which satisfy | fills the conditions of (a) or (b) and the conditions of (c) simultaneously may be sufficient.

  As described above, the adhesive members 60 and 27 have adhesive force due to some external force, such as those that are cured by heat or light irradiation to reduce the adhesiveness, and those that foam by foaming by heat or light irradiation to reduce the adhesive force. If it falls, it will not specifically limit.

  Here, according to (a), the conditions for reducing the adhesive strength of the adhesive member 60 and the conditions for decreasing the adhesive strength of the adhesive member 27 are different. In other words, the adhesive member 60 and the adhesive member 27 are peeled off by different external energy. For this reason, in S22-2, the adhesive force of the adhesive member 27 can be selectively reduced without reducing the adhesive force of the adhesive member 60. Accordingly, the positional deviation of the wafer 10 that occurs when the adhesive member 27 is peeled can be reliably prevented.

  Moreover, according to (b), the adhesive force of the adhesive member 60 and the adhesive member 27 can be controlled by temperature. Thereby, both S22-2 and S23-2 can be performed by temperature control. Therefore, control of these processes can be performed simply.

  Further, according to (c), one of the adhesive member 60 and / or the adhesive member 27 has a reduced adhesive force due to foaming of the foam material. As a result, the solid-state imaging device chip or the transparent substrate can be temporarily fixed with an appropriate adhesive force, and can be easily peeled off.

  Here, in the case where both of the adhesive member 60 and the adhesive member 27 are those whose adhesive force decreases as the temperature rises (above (b)), the adhesive member 27 whose temperature at which the adhesive force is lost is lower than that of the adhesive member 60 is used. .

  As will be described later, the pressure-sensitive adhesive member 60 (first pressure-sensitive adhesive member) is not peeled off during the transparent substrate / pressure-sensitive adhesive member peeling step (S22-2; first peeling step), and the solid-state imaging element side temporary fixing elimination step ( S23-2; second peeling step). For this reason, the transparent substrate / adhesive member peeling step (S22-2) is performed in a state where the wafer 10 is temporarily fixed by the adhesive member 60. Therefore, when the adhesive member 27 is peeled in the transparent substrate / adhesive member peeling step, the wafer 10 is not displaced.

  In addition, examples of the adhesive member whose adhesive strength is reduced by foaming of the foamed material by heat or light irradiation include Riva Alpha (registered trademark) manufactured by Nitto Denko Corporation. In this adhesive member, the internal foaming agent foams when the temperature is raised, and the adhesiveness of the adhesive members 60 and 27 is lowered.

  In addition, when using what the adhesive force declines by light irradiation as the adhesion member 60, it is preferable to use the dummy substrate 51 which has a light transmittance. Thereby, the adhesive member 60 can be efficiently irradiated with light from the back surface of the dummy substrate 51.

  As described above, the pressure-sensitive adhesive members 60 and 27 can be selected depending on the conditions for reducing the mutual pressure-sensitive adhesiveness, but it is more preferable that the pressure-sensitive adhesive members 60 and 27 are selected in consideration of the properties of the sealing agent 13.

  For example, in the present embodiment, in the wafer-transparent substrate bonding step (S21), a plurality of solid-state image pickup device chips 38 and a plurality of individual pieces corresponding thereto are transparent via a sealant (first sealant) 13. A substrate 25 is pasted. Here, the sealing agent 13 may be made of a material having high adhesion, such as an acrylic, epoxy, or polyimide photosensitive thermosetting resin. In addition, the curing temperature of the sealing agent 13 is lower than the temperature at which the adhesive member 60 is peeled off in the solid-state imaging device side temporary fixing elimination step (S23-2). And the seal | sticker which hardens the sealing agent 13 between a transparent substrate and adhesive member peeling process (S22-2; 1st peeling process) and a solid-state image sensor side temporary fixing cancellation process (S23-2; 2nd peeling process). An agent curing step (S23) is performed.

  More specifically, for example, the adhesive member 60 is one whose adhesiveness is reduced at 170 ° C. to 200 ° C., the adhesive member 27 is one whose adhesiveness is reduced by ultraviolet irradiation, and the sealing agent 13 is 120-170. Suppose that what hardens | cures at degreeC is used. In this case, in the transparent substrate / adhesive member peeling step, in the transparent substrate / adhesive member peeling step, the adhesive force of the adhesive member 27 is weakened by ultraviolet irradiation, and the adhesive member 27 is peeled off. Next, in the sealing agent curing step, the sealing agent 13 is cured by heating and holding at a temperature of about 120 to 170 ° C. for 40 to 80 minutes. Finally, in the solid-state image sensor side temporary fixing elimination step, the adhesive member 60 has reduced adhesiveness when the temperature is raised to 170 ° C. or higher, and when an appropriate temperature (eg, about 180 ° C.) is maintained, the adhesive force of the adhesive member 60 Is lost. Thereby, each solid-state image sensor chip can be picked and taken out from the dummy substrate 51 using a normal die bonding technique.

  Thus, when the curing temperature of the sealing agent 13 is lower than the temperature at which the adhesive member 60 is peeled off, the adhesive member 60 is not peeled when the sealing agent 13 is cured in the sealing agent curing step. That is, when the sealing agent 13 is cured, the state where the wafer 10 is temporarily fixed to the adhesive member 60 can be reliably maintained.

  As described above, according to the present embodiment, the transparent substrate 20 is divided by the support member attaching step (S14) and the transparent substrate cutting step (S15), and the individual transparent substrate 25 is formed. Moreover, the transparent substrate 20 is divided while being temporarily fixed to the adhesive member 27. Thereby, the individual transparent substrate 25 can be disposed in a state where the adhesive member 27 is temporarily fixed at an appropriate position. That is, the formation of the individual transparent substrate 25 and the temporary fixing of the individual transparent substrate 25 to the adhesive member 27 can be performed simultaneously. In addition, a plurality of individual transparent substrates 25 can be formed from a single transparent substrate 20.

  In the wafer-transparent substrate bonding step, the plurality of solid-state imaging element chips 38 (wafer 10) temporarily fixed to the adhesive member 60 and the plurality of individual transparent substrates 25 temporarily fixed to the adhesive member 27 Paste all at once. Here, the solid-state imaging device chip 38 is temporarily fixed to the adhesive member 60, and the individual transparent substrate 25 is temporarily fixed to the adhesive member 27. For this reason, no positional deviation occurs in the solid-state imaging device chip 38 and the individual transparent substrate 25. Therefore, in the wafer-transparent substrate bonding step, the solid-state imaging element chip 38 and the individual transparent substrate 25 can be aligned at a time.

  Further, after the adhesive member 27 is peeled off from the laminate A formed in the wafer-transparent substrate bonding step by the transparent substrate / adhesive member peeling step, the first adhesive member is peeled off by the solid-state image sensor side temporary fixing elimination step. To do. That is, the adhesive member 27 is peeled in a state where the solid-state imaging element chip 38 is temporarily fixed by the adhesive member 60. For this reason, when the adhesive member 27 is peeled off, no positional deviation occurs in the solid-state imaging device chip 38.

  As described above, according to the present embodiment, the individual transparent substrate 25 can be collectively attached to each solid-state image sensor chip 38 (the wafer 10 having the plurality of solid-state image sensors 11), and the solid-state image sensor. With the chip 38 temporarily fixed to the adhesive member 60, the adhesive member 27 can be peeled off. Therefore, the solid-state imaging device chip 38 and the individual transparent substrate 25 can be pasted so as not to be misaligned with each other while maintaining a certain manufacturing efficiency.

  In the present embodiment, the temperature at which the adhesiveness decreases is set such that the adhesive member 60> the adhesive member 27. For this reason, since the adhesive member 60 holds the wafer 10 even when the support member 22 and the adhesive member 27 are separated from the transparent substrate 20 by reducing the adhesiveness of the adhesive member 27, the solid-state imaging device chip. 38 alignments can be maintained. That is, no positional deviation occurs in the solid-state image sensor chip 38.

  Furthermore, if the adhesive member 60 whose adhesiveness is lowered at a temperature higher than the curing temperature of the sealing agent 13 is selected, the alignment state of the solid-state imaging device 11 and the individual transparent substrate 25 is maintained in the step of curing the sealing agent 13. The seal can be cured more accurately.

  In addition, according to this embodiment, since the transparent substrate 20 and the wafer 10 having the plurality of solid-state imaging elements 11 are cut separately, a transparent substrate and a substrate having a solid-state imaging element as in Patent Document 1 are used. There is no process for cutting at a time, and the cutting process does not become difficult. Further, since the plurality of individual transparent substrates 25 are bonded together to the wafer 10 having the plurality of solid-state imaging elements 11, the manufacturing efficiency for the bonding does not deteriorate.

  Moreover, according to this embodiment, there is no cutting process after bonding the transparent substrate 20 and the wafer 10 having the solid-state imaging device 11. As a result, dust or the like resulting from the cutting process is less likely to be mixed into the solid-state imaging element module 100, and the yield rate can be improved.

  At this time, before the step of bonding the transparent substrate 20 and the wafer 10 having the solid-state imaging device 11, the wafer 10 having the solid-state imaging device 11 is divided into solid-state imaging device chips 38 so that only good products are aligned. If it does, about the solid-state image sensor chip 38 after bonding the transparent substrate 20, since it can prevent generation | occurrence | production of the inferior goods resulting from the process before a bonding process, the non-defective product rate of a bonding process can be improved. it can.

  On the other hand, unlike the present embodiment, instead of the sealant 13, a sealant (second sealant) having a curing temperature lower than the temperature at which the adhesive member 27 is peeled can be used. In this case, it is preferable to have a curing step (second curing step) for curing the sealing agent before the transparent substrate / adhesive member peeling step (S22-2).

  Thus, when the curing temperature of the sealing agent is lower than the temperature at which the adhesive member 27 is peeled off and the curing step is performed before the transparent substrate / adhesive member peeling step, the sealing agent is cured in the curing step. Sometimes, neither the adhesive member 27 nor the adhesive member 60 is peeled off. For this reason, before peeling off the adhesive members 60 and 27, the sealing agent can be cured. Thereby, the positional relationship between the solid-state imaging device 11 and the individual transparent substrate 25 can be fixed by the sealant. Therefore, it is possible to reliably prevent the positional deviation of the solid-state imaging element 11 and the transparent substrate 20 and the positional deviation of the solid-state imaging element chip itself that occur when the adhesive members 60 and 27 are peeled off.

  In addition, this invention can also be expressed as follows.

  [1] A method for manufacturing a solid-state imaging device according to the present invention includes a dividing step of dividing a substrate having a plurality of solid-state imaging devices into individual solid-state imaging device chips, and arranging the divided solid-state imaging device chips in an aligned manner. A fixing step, a step of temporarily fixing the transparent substrate to the support member, a step of dividing the transparent substrate temporarily fixed to the support member, the divided transparent substrate, and a solid-state imaging device chip that is aligned and temporarily fixed Is a method for manufacturing a solid-state image sensor module, comprising a step of attaching the solid-state image sensor chip to a support member. The material for fixing loses the fixing force by applying the same external energy, and the material for temporarily fixing the solid-state image sensor chip is the transparent material. Than the material for temporarily fixing the substrate to the support member, or a method of losing the force to fix when added a greater external energy.

  According to this, after peeling off the support member on the transparent substrate side, the temporary fixing force of the solid-state imaging element chip can be reduced. As a result, there is no positional deviation of the chip when releasing the temporary fixation.

  [2] The solid-state imaging device manufacturing method of the present invention includes a dividing step of dividing a substrate having a solid-state imaging device into individual solid-state imaging device chips, and a step of temporarily arranging the divided solid-state imaging device chips in an aligned manner A step of temporarily fixing the transparent substrate to the support member, a step of dividing the transparent substrate temporarily fixed to the support member, and the separated transparent substrate and the solid-state imaging device chip that is aligned and temporarily fixed. A method for manufacturing a solid-state image sensor module, comprising a step of attaching and facing each other through an agent, and a material for temporarily fixing the solid-state image sensor chip, and for temporarily fixing the transparent substrate to a support member Both of these materials lose their fixing force by raising the temperature, and the material for temporarily fixing the solid-state imaging device chip supports the transparent substrate. Than the material to temporarily fix the member, or a method of losing the force to fix when placed in a higher temperature environment.

  According to this configuration, the temporary fixing force of the chip can be reduced after the support member on the transparent substrate side is peeled off by a condition change that is easy to control such as a temperature rise. The manufacturing method which does not produce this can be comprised simply.

  [3] In addition, according to the method for manufacturing a solid-state imaging device of the present invention, the sealing agent is formed of a material that is cured by raising the temperature, and the solid-state imaging device chip is temporarily installed above the curing temperature of the sealing agent. If the temperature at which the fixing material loses the fixing force is higher, the solid-state imaging device chip is sufficiently temporarily fixed when the sealant is cured, so that problems caused by misalignment are less likely to occur. The solid-state image pickup device chip after curing of the sealant can be placed at a predetermined position when taken out.

  The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims. That is, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.

  In the present invention, the individual transparent substrate can be affixed to each of the plurality of solid-state imaging device chips, and the second adhesive member is temporarily fixed to the first adhesive member. Can be peeled off. Therefore, it is possible to stick the solid-state imaging device chip and the individual transparent substrate so as not to be misaligned with each other while maintaining a certain manufacturing efficiency.

It is a flowchart which shows the manufacturing method of the solid-state image sensor module concerning this invention. (A) is a flowchart of the wafer processing step of FIG. 1, (b) is a cross-sectional view of the wafer corresponding to the main steps among the steps of (a), and (c) is a dicing step ( It is the figure which showed typically the condition of the wafer from S33) to a chip sort process (S34). (A) is a flowchart of the transparent substrate processing step of FIG. 1, (b) is a cross-sectional view of the transparent substrate 20 and the like corresponding to the main steps among the steps of (a), (c) It is a perspective view which shows the transparent substrate before and behind a shape adjustment cut process (S11). (A) is a flowchart of the modularization process of FIG. 1, (b) is a main sectional view of a wafer, a transparent substrate, etc. in each process of (a).

Explanation of symbols

S15 Transparent substrate cutting process (cutting process)
S21 Wafer-transparent substrate bonding process (bonding process)
S22-1 Support tape peeling step S22-2 Transparent substrate / adhesive member peeling step (first peeling step)
S23 Sealing agent curing process (first curing process)
S23-2 Solid Image Sensor Side Temporary Fixing Removal Process (Second Peeling Process)
S34 Chip sorting process (temporary fixing process)
10 Wafer (substrate having a solid-state image sensor, solid-state image sensor chip)
11 Solid-state imaging device 13 Sealant (first sealant)
20 Transparent substrate 25 Single transparent substrate 27 Adhesive member (second adhesive member)
38 Solid-state image sensor chip 60 Adhesive member (first adhesive member)
A Stack 100 Solid-state image sensor module

Claims (7)

A temporary fixing step of temporarily fixing a plurality of solid-state imaging element chips to the first adhesive member;
A dividing step of dividing the transparent substrate temporarily fixed to the second adhesive member, and forming a plurality of individual transparent substrates corresponding to each of the plurality of solid-state imaging element chips;
A pasting step of pasting a plurality of solid-state imaging device chips temporarily fixed to the first adhesive member and an individual transparent substrate temporarily fixed to the second adhesive member to form a laminate;
A first peeling step of peeling the second adhesive member from the laminate,
The manufacturing method of the solid-state image sensor module characterized by having the 2nd peeling process which peels a 1st adhesive member further from the laminated body which peeled the 2nd adhesive member.   2. The solid-state image pickup device module according to claim 1, wherein in the temporary fixing step, the substrate having the plurality of solid-state image pickup devices temporarily fixed to the first adhesive member is divided to form a plurality of solid-state image pickup device chips. Manufacturing method.   2. The solid-state imaging element module according to claim 1, wherein at least one of the first pressure-sensitive adhesive member and the second pressure-sensitive adhesive member includes a foam material, and the adhesive force is reduced by foaming of the foam material. Production method.   One of the first pressure-sensitive adhesive member and the second pressure-sensitive adhesive member has a pressure-sensitive adhesive force that decreases with an increase in temperature, and the other has a pressure-sensitive adhesive force that decreases due to light irradiation. The manufacturing method of the solid-state image sensor module of description.   4. The method of manufacturing a solid-state imaging element module according to claim 1, wherein both the first adhesive member and the second adhesive member have an adhesive force that decreases with an increase in temperature. In the pasting step, the plurality of solid-state imaging device chips and the individual transparent substrates are pasted through the first sealing agent having a curing temperature lower than the temperature at which the first adhesive member is stripped in the second stripping step.
6. The method for manufacturing a solid-state imaging element module according to claim 5, further comprising a first curing step for curing the first sealant between the first peeling step and the second peeling step. In the pasting step, the plurality of solid-state imaging element chips and the individual transparent substrates are pasted through a second sealing agent having a curing temperature lower than the temperature at which the second adhesive member is stripped in the first stripping step.
6. The method of manufacturing a solid-state imaging element module according to claim 5, further comprising a second curing step of curing the second sealant before the first peeling step.

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