JP2008270566A - Temperature controller, device manufacturing device, exposure and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature controller which is hardly affected by a fluctuation of an environment or a load, and can control a temperature stably. <P>SOLUTION: The temperature controller comprises: a heat exchanger 6 for conducting heat exchange between a primary coolant and a secondary coolant; a motor-operated valve 11 for changing a flow rate of the primary coolant flowing into the heat exchanger 6; and a feedback loop for controlling an opening of the motor-operated valve 11, thereby controlling a temperature of the secondary coolant flowing out of the heat exchanger 6. The feedback loop contains: a feedback control computing element 22 for determining the opening of the motor-operated valve 11 based on an error between a target temperature and a temperature of the secondary coolant flowing out of the heat exchanger 6; and a feedback control gain setter 24 for setting a gain of the feedback control computing element 22 according to the opening of the motor-operated valve 11. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a temperature control apparatus that controls the temperature of a refrigerant to be supplied to a temperature control target, a device manufacturing apparatus and an exposure apparatus including the temperature control apparatus, and a device manufacturing method.

  2. Description of the Related Art In a device manufacturing apparatus for manufacturing a device such as a semiconductor device, particularly an exposure apparatus, secondary cooling adjusted to a constant temperature is performed to recover heat generated in the apparatus and stabilize the temperature of each part in the apparatus. A temperature control device for circulating water is used. In recent years, the wafer size of a semiconductor wafer has become large, and for this reason, the stage of a semiconductor exposure apparatus has also been enlarged. In addition, the scanning speed and acceleration of the stage have increased due to demands for improving productivity. Accordingly, the amount of heat generated in the exposure apparatus has also increased. Further, the pattern to be transferred onto the semiconductor wafer is miniaturized, and thermal expansion and temperature fluctuation of the constituent elements of the exposure apparatus are not allowed. For this reason, the temperature control performance of the temperature control apparatus has come to have a significant influence on the exposure performance of the exposure apparatus.

  However, on the factory equipment side that uses the exposure apparatus, the temperature adjustment accuracy of the clean room room temperature and the temperature of the primary cooling water on the factory equipment side are required in order to increase the size, energy saving, and efficiency of the clean room and factory equipment. The accuracy tends to deteriorate. That is, there are increasing factors that deteriorate the temperature environment of the exposure apparatus.

  Conventionally, a temperature control device of this type of exposure apparatus is configured as shown in FIG. The temperature of the device manufacturing apparatus main body 1 having a heat source is controlled by a temperature control device 2. The temperature control device 2 circulates secondary cooling water whose temperature is controlled to a predetermined temperature through the inside of the device manufacturing apparatus main body 1 to recover heat generated by the heat source.

  Hereinafter, the configuration and operation of the temperature control device 2 will be described. The refrigerator 3 exhausts the heat of the secondary cooling water heated by the device manufacturing apparatus 1 into the primary cooling water from the factory equipment. The secondary cooling water tank 4 stores the secondary cooling water cooled by the refrigerator 3. The circulation pump 5 sends the secondary cooling water in the secondary cooling water tank 4 through the heat exchanger 6 to the semiconductor manufacturing apparatus 1 at a predetermined flow rate. The heat exchanger 6 heats the secondary cooling water to the target temperature using a part of the primary cooling water heated by the refrigerator 3. The temperature sensor 7 measures the temperature of the secondary cooling water supplied to the semiconductor manufacturing apparatus main body 1.

  The water control valve 10 adjusts the flow rate so that the temperature of the primary cooling water becomes constant. Thereby, the refrigerating capacity of the refrigerator 3 is maintained constant. The electric three-way valve 11 is opened and closed by an electric valve driver 23, and a part of the primary cooling water heated by the refrigerator 3 is heat exchanger at a flow rate of 0% to 100% of the maximum flow rate according to the open / close degree command value MV. Supply to the side channel 12 and supply the remaining flow rate to the bypass channel 13. The manual valve 14 can increase or decrease the flow range of the primary cooling water supplied from the electric three-way valve 11 to the heat exchanger 6 by changing the piping resistance of the bypass passage 13.

  The temperature control unit 20 is configured as follows to adjust the degree of opening and closing of the electric three-way valve 11 and to control the secondary cooling water to a predetermined temperature. The differentiator 21 calculates a difference between a preset target temperature T0 and the current temperature T1 measured by the temperature sensor 7, that is, a temperature error Terr. A feedback control calculator 22 that constitutes a part of a temperature feedback loop (hereinafter also referred to as an FB loop) appropriately performs PID control calculation using the temperature error Terr, and calculates a valve opening / closing degree command value MV of the electric three-way valve 11. Output. The electric valve driver 23 opens and closes the electric three-way valve 11 according to the valve opening / closing degree command value MV.

  As described above, the temperature sensor 7, the subtractor 21, the FB control calculator 22, the electric valve driver 23, the electric three-way valve 11, and the heat exchanger 6 constitute a feedback loop. When the temperature T1 measured by the temperature sensor 7 is lower than the target temperature T0, the feedback loop drives the electric three-way valve 11 in a direction to increase the flow rate of the primary cooling water supplied to the heat exchanger 6, If the temperature is high, drive in reverse.

  In the temperature control device 2 of the semiconductor exposure apparatus described above, the gain set in the feedback control calculator 22 used for controlling the temperature of the secondary cooling water is adjusted according to the installation environment and load conditions of the temperature control device 2. . Here, the gain set in the feedback control calculator 22 includes a proportional gain P, an integral gain I, and a differential gain D. The installation environment is the temperature and flow rate of the primary cooling water supplied from the factory equipment. The load status is the amount of heat generated by the semiconductor manufacturing apparatus, that is, the temperature of the secondary cooling water (temperature increased) and the flow rate.

  Therefore, in the conventional temperature control device, the gain of the feedback control arithmetic unit is not an optimum gain when the installation environment and the load situation at the time of use change significantly with respect to the state at the time of initial adjustment. If the control gain is too high, the temperature of the secondary cooling water will oscillate due to the temperature fluctuation of the primary cooling water, and if the control gain is too low, the temperature fluctuation of the primary cooling water will be transmitted as a disturbance and the secondary cooling water will be transmitted. The temperature will fluctuate.

Patent Document 1 discloses a compensation method for such a temperature control device. This document describes that the temperature difference between the primary cooling water and the secondary cooling water is detected and the sensitivity of the flow control valve is changed according to the temperature difference, and the flow rate of the primary cooling water is detected. It is described that the sensitivity of the flow control valve is changed according to the flow rate. Here, the sensitivity of the flow control valve may be understood as the control gain of the control loop.
Japanese Patent No. 2644896

  When the primary cooling water has a constant temperature (or the temperature difference between the primary cooling water and the secondary cooling water is constant) and a constant flow rate, a constant control gain may be used. However, as described below, there is a need to change the control gain.

  The electric three-way valve 11 changes the flow rate of the primary cooling water flowing through the heat exchanger 6 in the range from 0% to 100% of the maximum flow rate. Naturally, if temperature control is performed near the limit of the variable range of the flow rate such as 100% of the maximum flow rate, the output does not change at that limit, and temperature control cannot be performed normally. Therefore, the manual valve 14 of the bypass flow path is operated to adjust so that the control is performed within the proper control range of the electric three-way valve 11, for example, in the range of 15% to 85% of the maximum flow rate. Since the secondary cooling water is sufficiently cooled by the refrigerator 3, it must be reheated, and the flow rate of the primary cooling water flowing to the heat exchanger 6 is not usually 0%.

  An example in which the flow range of the primary cooling water supplied from the electric three-way valve 11 to the heat exchanger 6 is changed by opening and closing the manual valve 14 of the bypass flow path and operating the pipe resistance on the Pibus flow path side will be described. To do. It is assumed that the flow rate of the primary cooling water necessary for the heat exchanger 6 is 20 liters per minute. The maximum flow rate of the primary cooling water supplied from the electric three-way valve 11 to the heat exchanger 6 (ie, the flow rate at 100%) is changed from, for example, 150 liters per minute to 100 liters per minute by operating the manual valve 14. Suppose that In this case, the opening / closing degree of the electric three-way valve 11 corresponding to the flow rate of the primary cooling water to be supplied to the heat exchanger 6, that is, the flow rate of 20 liters per minute is changed from 13% to 20%. It will be controlled within the proper control range.

  In FIG. 3, the appropriate gain when the maximum flow rate of the electric three-way valve 11 is 150 liters per minute is indicated by a dotted line, and the appropriate range when the maximum flow rate is 100 liters per minute is indicated by a solid line. As shown in FIG. 3, the appropriate gain changes by changing the maximum flow rate (flow rate range) of the electric three-way valve, and particularly when the flow rate is small, the degree of change in the appropriate gain is large. In FIG. 3, when the maximum flow rate of the electric three-way valve 11 is 150 liters per minute, the appropriate gain for 20 liters per minute is about 83. On the other hand, when the maximum flow rate of the electric three-way valve 11 is changed to 100 liters per minute, the appropriate gain for 20 liters per minute is reduced to 50, which is 30% changed.

  Thus, when the flow range of the electric three-way valve 11 is changed using the manual valve 14 of the bypass flow path, the degree of opening and closing of the electric three-way valve 11 is different even when the primary cooling water has the same temperature and the same flow rate, that is, the same heat exchange amount. Therefore, different gain settings are required. When the flow rate of the heat exchanger 6 is large, the change amount of the appropriate gain is small and does not cause a large problem in control. However, particularly when the flow rate of the heat exchanger is small, the proper gain is greatly different and becomes a problem.

  The above-described example can occur when the temperature of the primary cooling water on the factory equipment side changes greatly in the semiconductor manufacturing factory of the old-style equipment, for example, affected by temperature changes in summer and winter. In this case, the temperature of the primary cooling water supplied to the heat exchanger 6 is changed at the same time by opening and closing the manual valve 14 to increase or decrease the flow rate of the primary cooling water flowing in the bypass flow path. It is possible to increase or decrease the maximum flow rate (flow rate range) of the primary cooling water supplied to. However, even in this case, the proportional gain P, the integral gain I, and the differential gain D set in the feedback control calculator 22 change even with the same temperature difference and the same flow rate, and have the disadvantage that they must be adjusted. It was.

  In Patent Document 1, the control gain is corrected using a flow rate sensor. However, when the flow rate sensor is used, the following problem occurs. As the liquid flow rate sensor, a Karman vortex method is mainly used in which a resistor such as a support is provided in the flow path and the frequency of the Karman vortex downstream of the resistor is measured. This type of flow rate sensor requires a straight flow path at the introduction portion of the resistor because of its measurement method, and thus the size of the apparatus increases. There is a minimum flow rate in the measurement range, and below the minimum flow rate cannot be measured. When the flow rate decreases, the measurement value vibrates and becomes unstable, and the measurement error increases.

  The present invention has been made on the basis of the above-mentioned problem recognition, and provides, for example, a temperature control device capable of stably controlling temperature and being hardly affected by changes in the environment and load, and an application example thereof. With the goal.

  According to a first aspect of the present invention, there is provided a heat exchanger that exchanges heat between a primary refrigerant and a secondary refrigerant, an electric valve that changes a flow rate of the primary refrigerant that flows into the heat exchanger, and the electric motor The present invention relates to a temperature control device including a feedback loop that controls the temperature of a secondary refrigerant flowing out of the heat exchanger by controlling the opening of a valve. In the temperature control device, the feedback loop determines a degree of opening of the motor-operated valve based on an error between a target temperature and a temperature of the secondary refrigerant flowing out of the heat exchanger, and the motor-operated valve And a feedback control gain setting device for setting the gain of the feedback control computing device in accordance with the opening degree.

  A second aspect of the present invention relates to a device manufacturing apparatus (for example, an exposure apparatus), and the device manufacturing apparatus controls temperatures of a device manufacturing apparatus main body and at least a part of components of the device manufacturing apparatus main body. The temperature control device configured as described above is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the temperature control apparatus which can control temperature stably, being hard to be influenced by the fluctuation | variation of an environment or load, and its application example can be provided.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

  FIG. 1 is a diagram showing a schematic configuration of a device manufacturing apparatus according to the first embodiment of the present invention. The device manufacturing apparatus according to the first embodiment of the present invention includes a device manufacturing apparatus main body (for example, an exposure apparatus main body) 1 and a temperature control apparatus 50. In addition, the same code | symbol is attached | subjected to the component same as FIG.

  The temperature control device 2 in FIG. 5 is replaced by the temperature control device 50 in FIG. The temperature control device 50 has a configuration in which the temperature control unit 20 in FIG. 5 is replaced with a temperature control unit 200, and the temperature control unit 200 has a configuration in which a feedback control gain setting device 24 is added to the temperature control unit 20 in FIG. Have

  The temperature of at least a part of the device manufacturing apparatus main body (for example, the exposure apparatus main body) 1 having a heat source is controlled by the temperature control device 50. The temperature control device 50 circulates secondary cooling water whose temperature is controlled to a predetermined temperature through the inside of the semiconductor manufacturing apparatus main body 1 to recover heat generated by the heat source.

  Hereinafter, the configuration and operation of the temperature control device 50 will be described. The refrigerator 3 exhausts the heat of the secondary cooling water (secondary refrigerant) heated by the device manufacturing apparatus main body 1 into the primary cooling water (primary refrigerant) from the factory equipment. The secondary cooling water tank (secondary refrigerant tank) 4 stores the secondary cooling water cooled by the refrigerator 3. The circulation pump 5 sends the secondary cooling water in the secondary cooling water tank 4 through the heat exchanger 6 to the device manufacturing apparatus 1 at a predetermined flow rate. The heat exchanger 6 heats the secondary cooling water to the target temperature using a part of the primary cooling water heated by the refrigerator 3. The temperature sensor 7 measures the temperature of the secondary cooling water supplied to the device manufacturing apparatus main body 1.

  The water control valve 10 adjusts the flow rate so that the temperature of the primary cooling water becomes constant. Thereby, the refrigerating capacity of the refrigerator 3 is maintained constant. The electric three-way valve (electric valve) 11 is opened / closed by an electric valve driver 23, and a part of the primary cooling water heated by the refrigerator 3 is flowed from 0% to 100% of the maximum flow according to the opening / closing degree command value MV. Is supplied to the heat exchanger side flow path 12 and the remaining flow rate is supplied to the bypass flow path 13. The electric three-way valve 11 is an example of an electric valve in which one of two outlets is connected to the heat exchanger 6 and the other is connected to the bypass flow path 13 to change the flow rate of the primary cooling water flowing into the heat exchanger 6. It is. The manual valve 14 can increase or decrease the flow range of the primary cooling water supplied from the electric three-way valve 11 to the heat exchanger 6 by changing the piping resistance of the bypass passage 13.

  The temperature control unit 200 is configured as follows to adjust the degree of opening and closing of the electric three-way valve 11 and to control the secondary cooling water flowing out from the heat exchanger 6 to a predetermined temperature. The differentiator 21 calculates a difference between a preset target temperature T0 and the current temperature T1 measured by the temperature sensor 7, that is, a temperature error Terr. The feedback control calculator 22 constituting a part of the feedback loop performs a PID control calculation using the temperature error Terr, and outputs a command value MV for instructing the valve opening / closing degree of the electric three-way valve 11. The electric valve driver 23 opens and closes the electric three-way valve 11 according to the command value MV.

  As described above, the temperature sensor 7, the subtractor 21, the FB control calculator 22, the electric valve driver 23, the electric three-way valve 11, and the heat exchanger 6 constitute a feedback loop. When the temperature T1 measured by the temperature sensor 7 is lower than the target temperature T0, the feedback loop drives the electric three-way valve 11 in a direction to increase the flow rate of the primary cooling water supplied to the heat exchanger 6, If the temperature is high, drive in reverse.

  The feedback control gain setting unit 24 stores the gain of the FB control arithmetic unit 22 corresponding to the command value MV as a table or a function. The feedback control gain setting unit 24 samples a command value MV for instructing the valve opening / closing degree of the electric three-way valve 11, determines the gain of the FB control arithmetic unit 22 based on the sampled command value MV, and outputs the gain to the FB. Set in the control calculator 22. Here, the gain of the FB control calculator 22 can include, for example, a proportional gain (P), an integral gain (I), and a differential gain (D).

  As a method of sampling the command value MV, for example, the command value MV may be integrated and averaged at every predetermined time, or the command value MV value may be averaged as a moving average of a predetermined time, or within a predetermined time The command value MV may be an intermediate value between the maximum value and the minimum value.

  FIG. 4 is a diagram showing an optimum value of the gain to be set in the FB control calculator 22 according to the degree of opening / closing (0 to 100%) of the electric three-way valve 11. For example, if the sampled command value MV (that is, the degree of opening and closing of the electric three-way valve 11) is 50%, 20 may be set as the control gain to be set in the FB control calculator 22. Here, the control gain to be set in the FB control calculator 22 when the manual valve 14 is operated in accordance with the temperature fluctuation of the primary cooling water to change the maximum flow rate of the primary cooling water flowing to the heat exchanger 6. Can vary greatly as illustrated in FIG. On the other hand, as illustrated in FIG. 4, the appropriate control gain according to the degree of opening and closing of the electric three-way valve 11 does not depend on the maximum flow rate of the primary cooling water flowing through the heat exchanger 6.

  The temperature control device 50 according to a preferred embodiment of the present invention includes a feedback control gain setting unit 24 that sets a gain corresponding to the opening degree of the electric three-way valve, that is, the electric valve command value MV, in a feedback control calculator. As a result, even if the installation environment and load conditions change, the flow rate of the electric three-way valve can be set according to the temperature of the primary cooling water on the factory equipment side, and the secondary cooling water can be set with an optimum gain. The temperature can be controlled.

  Therefore, it is not necessary to have many types of gain tables according to the operation of the manual valve 14, and it is necessary to manually select an appropriate gain according to the operation amount of the manual valve that cannot be automatically changed in the control. This eliminates the need for flexible and reliable temperature control.

  Moreover, according to a preferred embodiment of the present invention, it is not necessary to use an expensive measuring instrument such as a flow rate sensor. This eliminates the limitation of the measurement range, so that it is not necessary to perform flow rate servo using a flow rate sensor in which the measured value oscillates and becomes unstable when the flow rate decreases and the measurement error increases. Further, the removal of the flow sensor that causes the pressure loss also contributes to the reduction of the load on the pump.

  FIG. 2 is a diagram showing a schematic configuration of a device manufacturing apparatus according to the second embodiment of the present invention. The device manufacturing apparatus according to the second embodiment of the present invention includes a device manufacturing apparatus main body (for example, an exposure apparatus main body) 1 and a temperature control apparatus 50 ′. In addition, the same code | symbol is attached | subjected to the component same as FIG.

  The temperature control device 50 in FIG. 1 is replaced by a temperature control device 50 ′ in FIG. The temperature control device 50 ′ has a configuration in which the temperature control unit 200 in FIG. 1 is replaced with a temperature control unit 210, and the temperature control unit 210 has a configuration in which a temperature feedforward control system is added to the temperature control unit 200 in FIG. Have

  The temperature feedforward control system includes a temperature sensor 17, a temperature feedforward (hereinafter also referred to as FF) control calculator 25, a feedforward control gain setting unit 27, and an adder 26.

  The temperature control unit 210 is configured as follows to adjust the degree of opening and closing of the electric three-way valve 11 and to control the secondary cooling water to a predetermined temperature. The temperature sensor 17 measures the temperature T2 of the primary cooling water. The feedforward control calculator 25 inputs the temperature T2 of the primary cooling water measured by the temperature sensor 17 and performs a feedforward PID calculation that compensates for the temperature fluctuation. The adder 26 adds the command value from the FB control calculator 22 and the compensation value from the feedback control calculator 22 and outputs a command value MV.

  Thus, the temperature sensor 17, the FF control calculator 25, the adder 26, the electric valve driver 23, and the electric three-way valve 11 constitute a temperature feedforward control system. When the temperature T2 of the temperature sensor 17 changes in the direction of decreasing, the control system operates the electric three-way valve 11 in the direction of increasing the flow rate of the primary cooling water to the heat exchanger, and fluctuates in the direction of increasing. If you want to work the opposite.

  The feedforward control gain setting unit 27 stores the gain (which may include dead time) of the feedforward control computing unit 25 corresponding to the command value MV as a table or a function. The FF control gain setting unit 27 samples the valve opening / closing degree command value MV of the electric three-way valve 11, determines a gain based on the sampled command value MV, and sets it in the FF control computing unit 25. Here, the gain of the FF control calculator 27 can include, for example, a proportional gain (P), an integral gain (I), a differential gain (D), and a dead time.

  As a method of sampling the command value MV, for example, the command value MV may be integrated and averaged at every predetermined time, or the command value MV value may be averaged as a moving average of a predetermined time, or within a predetermined time The command value MV may be an intermediate value between the maximum value and the minimum value.

  In the above embodiment, as the fluid described as the secondary cooling water, for example, pure water, cooling water mixed with brine, Fluorinert (trade name), and Galden (trade name) are preferable. It may be a fluid.

  Next, a device manufacturing method using the above-described device manufacturing apparatus, here, an exposure apparatus will be described. FIG. 6 is a diagram showing a flow of an entire manufacturing process of a semiconductor device. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (reticle fabrication), a reticle (also referred to as an original or a mask) is fabricated based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer (also referred to as a substrate) is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the reticle and wafer. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 7 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (CMP), the insulating film is planarized by a CMP process. In step 16 (resist process), a photosensitive agent is applied to the wafer. In step 17 (exposure), the above exposure apparatus is used to expose a wafer coated with a photosensitive agent through a mask on which a circuit pattern is formed, thereby forming a latent image pattern on the resist. In step 18 (development), the latent image pattern formed on the resist on the wafer is developed to form a resist pattern. In step 19 (etching), the layer or substrate under the resist pattern is etched through the portion where the resist pattern is opened. In step 20 (resist stripping), the resist that has become unnecessary after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

It is a figure which shows schematic structure of the device manufacturing apparatus of 1st Embodiment of this invention. It is a figure which shows schematic structure of the device manufacturing apparatus of 2nd Embodiment of this invention. It is a figure which illustrates the optimal gain according to a flow volume. It is a figure which shows the optimal value of the gain which should be set to the FB control calculator 22 according to the opening / closing degree of the electric three-way valve. It is a figure which shows schematic structure of the conventional device manufacturing apparatus. It is a figure for demonstrating a device manufacturing method. It is a figure for demonstrating a device manufacturing method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1: Semiconductor manufacturing apparatus main body, 2: Temperature control apparatus, 3: Refrigerator, 4: Secondary cooling water tank, 5: Circulation pump, 6: Heat exchanger, 7: Temperature sensor, 8: Secondary cooling water supply pipe 9: Secondary cooling water recovery pipe, 10: Water control valve, 11: Electric three-way valve, 12: Heat exchanger side flow path, 13: Bypass flow path, 14: Manual valve, 15: Primary cooling water supply pipe , 16: primary cooling water recovery pipe, 17: temperature sensor, 20: temperature controller, 21: subtractor, 22: feedback control calculator, 23: electric valve driver, 24: feedback control gain setting device, 25: feed Forward control computing unit, 26: adder, 27: feedforward control gain setting unit, 50, 50 ′: temperature control device, 200, 210: temperature control unit

Claims (7)

By controlling a heat exchanger that exchanges heat between the primary refrigerant and the secondary refrigerant, an electric valve that changes a flow rate of the primary refrigerant flowing into the heat exchanger, and an opening degree of the electric valve A temperature control device comprising a feedback loop for controlling the temperature of the secondary refrigerant flowing out of the heat exchanger,
The feedback loop includes a feedback control arithmetic unit that determines an opening degree of the motor-operated valve based on an error between a target temperature and a temperature of the secondary refrigerant flowing out of the heat exchanger, and the feedback loop according to the opening degree of the motor-operated valve. A feedback control gain setting unit for setting a gain of the feedback control computing unit;
A temperature control device characterized by that.   A feedforward control system for controlling the temperature of the secondary refrigerant flowing out of the heat exchanger by controlling the opening degree of the motor-operated valve based on the temperature of the primary refrigerant flowing into the heat exchanger; The temperature control device according to claim 1, wherein The feedforward control system includes a feedforward control computing unit that feeds forward the temperature of the primary refrigerant flowing into the heat exchanger in order to control the opening of the motor-operated valve, and the opening of the motor-operated valve. A feedforward control gain setting unit for setting a gain of the feedforward control computing unit;
The opening degree of the motor-operated valve is controlled based on the output of the feedback control calculator and the output of the feedforward control calculator.
The temperature control apparatus according to claim 1 or 2, wherein   The electric motor is an electric three-way valve, and one of two outlets of the electric three-way valve is connected to the heat exchanger, and the other is connected to a bypass flow path. 4. The temperature control device according to any one of 3 above. A device manufacturing apparatus,
A device manufacturing apparatus body;
The temperature control apparatus according to any one of claims 1 to 4, wherein the temperature control apparatus is configured to control a temperature of at least a part of a component of the device manufacturing apparatus main body.
A device manufacturing apparatus comprising: An exposure apparatus,
An exposure apparatus body;
The temperature control apparatus according to any one of claims 1 to 4, wherein the temperature control apparatus is configured to control a temperature of at least a part of components of the exposure apparatus body;
An exposure apparatus comprising: A device manufacturing method comprising:
An exposure step of exposing a substrate coated with a photosensitive agent using the exposure apparatus according to claim 6;
A developing step of developing the photosensitive agent;
A device manufacturing method comprising:

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