JP2008258303A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method by which an adhesive can be easily exfoliated from a semiconductor substrate. <P>SOLUTION: The semiconductor device manufacturing method includes an adhesive application process of applying an adhesive on a first plane of a semiconductor substrate; an adhering process of pasting a first plane 22 of a support substrate 20 to the semiconductor substrate via the adhesive; a processing process of processing a second plane of the semiconductor substrate; a separation process of separating the support substrate 20 from the adhesive; a sticking process of sticking a sheet member for exfoliation to the adhesive; and an exfoliation process of exfoliating the adhesive together with the sheet member for exfoliation from the semiconductor substrate. Near a peripheral edge portion 61 of the first plane 22 of the support substrate 20, a concave portion 62 with a flat bottom face 25 is formed. In the adhering process, the concave portion 62 is filled with the adhesive, forming a convex portion with a flat top face near a peripheral edge portion of the adhesive. In the sticking process, the sheet member for exfoliation is stuck to at least the top face of the convex portion of the adhesive. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  In recent years, portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance), and devices such as sensors, micromachines, and printer heads have been developed in order to reduce size and weight. Various electronic components have been reduced in size and thickness.

  In order to reduce the thickness of the semiconductor chip, after the electronic circuit is formed on the semiconductor substrate, the semiconductor substrate is fixed to the support substrate via an adhesive or the like, and the back surface of the semiconductor substrate (the surface on which the electronic circuit is not formed) A method of reducing the thickness of a semiconductor substrate by grinding (back grinding) from the side is known (for example, see Patent Document 1).

When a semiconductor substrate is manufactured by the above-described method, it is necessary to peel the semiconductor substrate and the support substrate after completion of the grinding of the semiconductor substrate. As a peeling method, first, the support substrate and the adhesive are peeled off by irradiating a laser beam to a bonding portion between the support substrate and the adhesive. Next, the adhesive and the semiconductor substrate are peeled off. When the adhesive is peeled off by peeling, generally, a method of peeling by sticking a sticky release sheet to the outer peripheral portion of the adhesive It has been.
JP 2006-135272 A

  However, as shown in FIG. 15, when the support substrate 220 and the semiconductor substrate 210 are pressed and bonded together, the adhesive 230 protrudes to the outer peripheral portion, and the burr 270 is formed at the peripheral portion of the adhesive. The burr 270 is formed in a substantially mountain shape so as to protrude in a direction along the side surface of the support substrate 220. As illustrated in FIG. 16, even after the support substrate 220 is separated from the adhesive 230, the release sheet member 250 is adhered to the adhesive 230 with the burr 270 formed thereon. Only the top 272 of the burr 270 at the peripheral edge of 230 is adhered. That is, since the peeling sheet member 250 and the adhesive 230 are contacted only by point contact (line contact), the adhesion between the peeling sheet member 250 and the adhesive 230 is deteriorated. As a result, there is a problem that the peeling sheet member 250 is peeled off from the adhesive 230 and the adhesive 230 cannot be peeled off from the semiconductor substrate 210.

  In order to solve the problem, there is a method in which the outer diameter of the support substrate 220 is made approximately 1 to 2 mm larger than the outer diameter of the semiconductor substrate 210. With this configuration, even if the adhesive 230 protrudes from the peripheral portion of the semiconductor substrate 210 and the burr 270 is formed, the surface of the adhesive 230 on the support substrate 220 side becomes flat. Therefore, the peeling sheet member 250 can be reliably adhered to the surface of the adhesive 230, and the adhesive 230 can be reliably peeled off. However, when the semiconductor substrate 210 is chucked in the semiconductor substrate processing apparatus, if the support substrate 220 having a diameter larger than that of the semiconductor substrate 210 is adhered, there is a problem that the semiconductor substrate 210 cannot be chucked.

  Therefore, the present invention has been made in view of the above-described circumstances, and an object thereof is to provide a method for manufacturing a semiconductor device capable of easily peeling an adhesive from a semiconductor substrate.

In order to solve the above problems, a method of manufacturing a semiconductor device according to the present invention includes an adhesive application step of applying an adhesive to a first surface of a semiconductor substrate, and a support substrate on the semiconductor substrate via the adhesive. An adhesion step of bonding the first surface, a processing step of processing the second surface of the semiconductor substrate, a separation step of separating the support substrate from the adhesive, and a peeling sheet member attached to the adhesive In the manufacturing method of a semiconductor device having a sticking step and a peeling step for peeling the adhesive from the semiconductor substrate together with the peeling sheet member, a bottom surface is provided in the vicinity of the peripheral portion of the first surface of the support substrate. In the bonding step, the adhesive is filled with the adhesive, and a convex portion having a flat top surface is formed in the vicinity of the peripheral edge of the adhesive. At least before the adhesive It is characterized by affixing the release sheet members on the top surface of the projection.

  With this configuration, when the adhesive applied to the semiconductor substrate and the support substrate are bonded together, the concave portion of the support substrate is filled with the adhesive, and the support process is completed after the semiconductor substrate processing process is completed. When the substrate is separated from the adhesive, convex portions corresponding to the positions of the concave portions are formed on the surface of the adhesive. In addition, since the flat top surface corresponding to the bottom surface of the concave portion of the support substrate is formed on the convex portion, the adhesive and the peeling sheet member are surely adhered on the top surface. There is an effect that the adhesive can be reliably and easily peeled off from the semiconductor substrate. Furthermore, since a convex part is formed in the peripheral part vicinity of an adhesive agent, an adhesive agent can be easily peeled from the peripheral part of an adhesive agent in the state which stuck the peeling sheet member.

  In addition, since the contact area between the support substrate and the adhesive can be increased by forming the recess in the support substrate, the adhesion between the support substrate and the adhesive can be improved. In the processing step, the semiconductor substrate can be prevented from falling off. In addition, since the adhesion between the support substrate and the semiconductor substrate can be improved, the warpage of the semiconductor substrate can be reduced, and thus the semiconductor substrate can be thinned with high accuracy.

In the method for manufacturing a semiconductor device of the present invention, the depth of the concave portion of the support substrate is formed so as to protrude from the peripheral portion of the first surface of the support substrate along the side surface of the support substrate in the bonding step. The adhesive is characterized by being formed deeper than the height of the burr of the adhesive.
By configuring in this way, the height of the convex portion of the adhesive is formed higher than the height of the burr formed on the outer peripheral edge portion of the adhesive. It can be securely attached to the top surface. Therefore, there is an effect that the adhesive can be reliably and easily peeled off from the semiconductor substrate.

In addition, the semiconductor device manufacturing method of the present invention is characterized in that the semiconductor substrate and the support substrate have the same diameter.
With this configuration, the semiconductor substrate and the support substrate can be surely chucked without modifying the existing semiconductor substrate processing apparatus, and the handling of these members can be facilitated. effective. In this case, burrs are formed at the peripheral edge portion of the adhesive, but the adhesive can be reliably peeled from the semiconductor substrate by forming the convex portions on the adhesive as described above.

The method for manufacturing a semiconductor device according to the present invention is characterized in that the concave portion of the support substrate is formed on the outermost peripheral portion of the support substrate.
By comprising in this way, the convex part of an adhesive agent is formed in the outermost periphery part of an adhesive agent. That is, since the convex portion is formed at a position closer to the starting point for peeling the adhesive from the semiconductor substrate, there is an effect that the adhesive can be peeled from the semiconductor substrate more easily.

The method for manufacturing a semiconductor device according to the present invention is characterized in that the concave portion of the support substrate is continuously formed in the circumferential direction inside the outermost peripheral portion of the support substrate.
By constituting in this way, since the convex part of the adhesive is continuously formed in the circumferential direction, the adhesive area between the adhesive and the peeling sheet member can be increased, and therefore, it can be easily bonded. There is an effect that the agent can be separated from the semiconductor substrate. Further, since the concave portion of the support substrate is formed slightly inside the outer peripheral edge portion, the strength of the outer peripheral edge portion of the support substrate can be ensured.

Furthermore, the semiconductor device manufacturing method of the present invention is characterized in that the concave portion of the support substrate is intermittently formed in the circumferential direction inside the outermost peripheral portion of the support substrate.
By comprising in this way, it becomes possible to further improve the intensity | strength of the outer periphery part of a support substrate. Therefore, there is an effect that the concave portion can be formed in consideration of the balance between the strength of the support substrate and the adhesion between the peeling sheet member.

The method for manufacturing a semiconductor device according to the present invention is characterized in that the concave portion of the support substrate is formed only in a portion along the orientation flat portion of the support substrate.
With such a configuration, there is an effect that the adhesive can be easily peeled off from the semiconductor substrate by forming a linear convex portion in the adhesive while further ensuring the strength of the support substrate.

(First embodiment)
Next, a first embodiment of the present invention will be described with reference to FIGS. In each drawing used for the following description, the scale of each member is appropriately changed to make each member a recognizable size.

(Semiconductor substrate)
FIG. 1 is a plan view showing a semiconductor substrate, and FIG. 2 is a cross-sectional view taken along line AA in FIG.
As shown in FIGS. 1 and 2, the semiconductor substrate 10 is formed in a substantially circular shape in plan view, and a part of the outer periphery thereof is cut in a straight line to form an orientation flat portion 11. Further, a semiconductor element 13 such as an integrated circuit is formed on the surface 12 of the semiconductor substrate 10, and an electronic circuit including an electronic element such as a transistor and a memory element and an electric wiring is formed for each semiconductor element. Furthermore, the back surface 14 of the semiconductor substrate 10 is a surface to be ground by thin processing described later, and no semiconductor element such as an integrated circuit is formed on the back surface 14.
The semiconductor substrate 10 is a substrate made of, for example, Si (silicon), that is, a silicon wafer.

(Support board)
FIG. 3 is a plan view showing the support substrate, and FIG. 4 is a cross-sectional view taken along line BB in FIG.
As shown in FIGS. 3 and 4, the support substrate 20 is formed in substantially the same shape as the semiconductor substrate 10 in plan view. The surface 22 of the support substrate 20 has a flat central portion. Here, a concave portion 62 is formed continuously in the circumferential direction on the peripheral edge portion 61 of the surface 22 of the support substrate 20. That is, the recess 62 is formed over the entire circumference so as to follow the outer circumference of the support substrate 20. In addition, the bottom surface 25 of the recess 62 is flat and formed so as to be substantially parallel to the surface 22.

The recess 62 is formed by a method such as etching or mechanical grinding. For example, the depth d of the recess 24 is formed at 0.2 mm, and the width w of the recess 24 is formed at 4 mm. The support substrate 20 has a thickness D of 0.8 mm.
Moreover, the width w of the recessed part 24 should just be formed by about 3-5 mm, and the thickness D of the support substrate 20 should just be formed by about 0.5 mm-1.0 mm.

(Semiconductor substrate thin processing method)
Next, a method for thinning the semiconductor substrate will be described with reference to FIGS.
As shown in FIG. 5A, a semiconductor element 13 is formed on the surface 12 of the semiconductor substrate 10. Here, the semiconductor element 13 is an electronic circuit including an electronic element such as a transistor or a memory element and an electric wiring as described above, and these are known photolithography processes, oxidation processes, film forming processes, impurity implantation processes, etching processes, It is formed by a process or the like.

  As shown in FIG. 5B, an adhesive 30 is applied to the surface 12 of the semiconductor substrate 10 (adhesive application step). The adhesive 30 is applied by spin coating. The adhesive 30 used here is preferably a liquid. By using the liquid adhesive 30, the adhesive spreads in all the spaces between the semiconductor substrate 10 and the support substrate 20, so that the adhesive area is increased and the adhesive strength can be improved.

  As shown in FIG. 5C, after the semiconductor substrate 10 is inverted, the support substrate 20 and the semiconductor substrate 10 are bonded together (bonding process). Here, the surface 22 of the support substrate 20 is formed as a highly accurate flat surface so that the semiconductor substrate 10 is not warped. Then, the semiconductor substrate 10 is bonded to the support substrate 20 so that the surface 22 of the support substrate 20 and the surface 12 of the semiconductor substrate 10 face each other. Further, the above-described adhesive 30 is provided between the semiconductor substrate 10 and the support substrate 20. Therefore, by bonding the semiconductor substrate 10 and the support substrate 20 together, the liquid adhesive 30 spreads over the entire surface 12, and the semiconductor substrate 10 can be bonded to the support substrate 20. In addition, when bonding the semiconductor substrate 10 and the support substrate 20 with the adhesive 30, it is preferable to carry out under vacuum conditions. In this way, it is possible to make it difficult for bubbles to enter the adhesive 30.

  The adhesive 30 is preferably an ultraviolet reactive resin. Thereby, after bonding the semiconductor substrate 10 and the support substrate 20 via the adhesive 30, the semiconductor substrate 10 and the support substrate 20 are securely bonded by irradiating the adhesive 30 with ultraviolet rays. Is possible. The adhesive 30 may employ a thermosetting resin.

Here, a recess 62 is formed in the peripheral edge 61 of the surface 22 of the support substrate 20, and this recess 62 is also filled with the adhesive 30. Further, the adhesive 30 protrudes from the outer peripheral edge portions of the semiconductor substrate 10 and the support substrate 20 to form burrs 31.
Further, a sacrificial layer (not shown) is applied to the surface 22 of the support substrate 20.

The recess 62 is formed in the support substrate 20 by etching or mechanical grinding.
As a method for forming the recess 62, for example, when a dry etching method is used, it is performed by generating a plasma of a reactive gas in the chamber while the support substrate 20 is disposed in the chamber. Here, a mask is formed at the center of the support substrate 20, and the peripheral edge 61 is exposed. By using such a dry etching method, the surface of the exposed peripheral edge portion 61 is etched to form the recess 62.

  When mechanical grinding is used, the grinding member and the support substrate 20 are moved relative to each other in the peripheral direction of the support substrate 20 with the grinding means in contact with the peripheral portion 61 of the support substrate 20. Is called. Here, the tooth shape of the grinding means is appropriately selected so that the recess 62 has a desired shape. When performing such grinding, it is preferable to mask the region other than the grinding region of the surface 22 in order to protect the surface 22. By performing such mechanical grinding, the surface of the exposed peripheral edge 61 is ground to form the recess 62.

  As shown in FIG. 5D, back grinding is applied from the back surface 14 side of the semiconductor substrate 10, and thin processing is performed on the semiconductor substrate 10 (processing step). A CMP (Chemical and Mechanical Polishing) method is used to reduce the thickness of the semiconductor substrate 10. Specifically, the semiconductor substrate 10 is attached to the substrate support head, and a polishing cloth (pad) is attached to the surface of the polishing platen, and the back surface 14 of the semiconductor substrate 10 and the polishing cloth are brought into contact with each other. Then, the head and the surface plate to which the semiconductor substrate 10 is attached are rotated so that the back surface 14 of the semiconductor substrate 10 and the polishing cloth rub against each other. At this time, a polishing liquid (slurry) is supplied to the surfaces to be rubbed. By doing in this way, the back surface 14 of the semiconductor substrate 10 can be grind | polished by balance of mechanical grinding | polishing and chemical action. Thereby, the portion indicated by the broken line in FIG. 5D is removed, and the thin semiconductor substrate 40 is formed. Further, the thin semiconductor substrate 40 is subjected to spin etching or dry etching to finish thin processing.

  As shown in FIG. 5E, after the thin semiconductor substrate 40 (semiconductor substrate 10) is inverted again, the bonding surface between the support substrate 20 and the adhesive 30 is irradiated with laser light 45, and the support substrate 20 and It peels and isolate | separates from the adhesive agent 30 (separation process). At this time, the adhesive 30 and the thin semiconductor substrate 40 are still bonded. The support substrate 20 is not separated by the laser beam 45, but may be separated by other methods.

Next, as shown to FIG. 6 (A), the peeling sheet member 50 is stuck to the adhesive agent 30 (sticking process).
As shown in FIG. 6B, after the peeling sheet member 50 is attached to the adhesive 30, the peeling sheet member 50 is peeled from the thin semiconductor substrate 40 together with the adhesive 30 (peeling step).

Here, when the semiconductor substrate 10 and the support substrate 20 are bonded to each other, the burrs 31 of the adhesive 30 protruding from the respective outer peripheral portions are formed on the peripheral edge portion 32 of the adhesive 30. Further, a convex portion 33 is formed on the peripheral edge portion 32 of the adhesive 30 corresponding to the concave portion 62 formed on the support substrate 20. The height h1 of the convex portion 33 from the surface 34 of the adhesive 30 is formed to be higher than the height h2 of the burr 31. Accordingly, when the peeling sheet member 50 is stuck to the adhesive 30, the peeling sheet member 50 is stuck so as to be in surface contact with the top surface 35 of the convex portion 33, and the adhesive strength between the adhesive 30 and the peeling sheet member 50 is improved. be able to. Therefore, the adhesive 30 can be reliably peeled from the thin semiconductor substrate 40 by applying a force in a direction away from the semiconductor substrate 10 to the peeling sheet member 50.

In order to peel the adhesive 30 from the thin semiconductor substrate 40, a peeling portion from the adhesive 30 is generated at any position on the peripheral edge of the thin semiconductor substrate 40. Thereafter, the peeling sheet member 50 is used. The adhesive 30 can be easily peeled from the thin semiconductor substrate 40 by pulling. In other words, since it is only necessary to generate a part that causes the adhesive 30 to be peeled off at one of the peripheral parts of the thin semiconductor substrate 40, the convex part 33 is more easily bonded as it is formed in a place near the outermost peripheral part. The agent 30 can be peeled from the thin semiconductor substrate 40.

  According to the present embodiment, an adhesive application step of applying the adhesive 30 to the surface (active surface) 12 of the semiconductor substrate 10 (thin semiconductor substrate 40) and the support through the adhesive 30 applied to the semiconductor substrate 10 are supported. Bonding process for bonding the surface 22 of the substrate 20, processing process for processing the semiconductor substrate 10, separation process for separating the support substrate 20 from the adhesive 30, and bonding for attaching the peeling sheet member 50 to the adhesive 30 In the manufacturing method of the semiconductor device having the attaching step and the peeling step of peeling the adhesive 30 from the semiconductor substrate 10 together with the peeling sheet member 50, the bottom surface 25 is provided in the vicinity of the peripheral edge 61 of the surface 22 of the support substrate 20. A flat concave portion 62 is formed, and in the bonding step, the concave portion 62 is filled with the adhesive 30 to form a convex portion 33 having a flat top surface 35 in the vicinity of the peripheral edge portion 32 of the adhesive 30. Was to adhering the peel sheet member 50 to the top surface 35 of the convex portion 33 of the adhesive 30.

With this configuration, when the adhesive 30 applied to the semiconductor substrate 10 and the support substrate 20 are bonded together, the concave portion 62 of the support substrate 20 is also filled with the adhesive 30, and the processing process of the semiconductor substrate 10 is performed. When the support substrate 20 is separated from the adhesive 30 after completion, the convex portion 33 corresponding to the position of the concave portion 62 is formed on the surface 34 of the adhesive 30. Further, since the convex portion 33 is formed with a flat top surface 35 corresponding to the bottom surface 25 of the concave portion 62 of the support substrate 20, the adhesive 30 and the peeling sheet member 50 are surely faced on the top surface 35. Therefore, the adhesive 30 can be reliably and easily peeled off from the semiconductor substrate 10. Furthermore, since the convex part 33 is formed in the peripheral part 32 vicinity of the adhesive agent 30, in the state which stuck the peeling sheet 50, the adhesive agent 30 is easily peeled from the peripheral part 32 of the adhesive agent 30 as the starting point. be able to.

  In addition, since the contact area of the support substrate 20 and the adhesive 30 can be increased by forming the recess 62 in the support substrate 20, the adhesion between the support substrate 20 and the adhesive 30 can be improved. . Therefore, the semiconductor substrate 10 can be prevented from falling off during the processing of the semiconductor substrate 10. In addition, since the adhesion between the support substrate 20 and the semiconductor substrate 10 can be improved, the warpage of the semiconductor substrate 10 can be reduced, and thus the semiconductor substrate 10 can be thinned with high accuracy.

Further, the depth d of the concave portion 62 of the support substrate 20 is set such that the height b2 of the burr 31 of the adhesive 30 protruding from the peripheral edge 61 of the surface 22 of the support substrate 20 along the side surface of the support substrate 20 in the bonding process. Formed deeper than.
Since it comprised in this way, the height h1 of the convex part 33 of the adhesive agent 30 is formed higher than the height h2 of the burr | flash 31 currently formed in the peripheral part 32 of the adhesive agent 30. FIG. Therefore, the peeling sheet member 50 can be reliably adhered to the top surface 35 of the convex portion 33 of the adhesive 30. As a result, the adhesive 30 can be reliably and easily peeled from the semiconductor substrate 10.

Further, the semiconductor substrate 10 and the support substrate 20 have substantially the same shape (same diameter) in plan view.
Since it comprised in this way, the semiconductor substrate 10 and the support substrate 20 can be reliably chucked, without modifying the existing processing apparatus of the semiconductor substrate 10. Therefore, it is possible to easily handle these members. In this case, the burrs 31 are formed on the peripheral edge portion 32 of the adhesive 30, but by forming the convex portions 33 on the adhesive 30 as described above, the adhesive 30 can be reliably removed from the semiconductor substrate 10. Can be peeled off.

Further, the concave portion 62 of the support substrate 20 was continuously formed in the circumferential direction at the peripheral edge 61 inside the outermost peripheral portion of the support substrate 20.
Since it comprised in this way, since the convex part 33 of the adhesive agent 30 is continuously formed in the circumferential direction, the sticking area of the adhesive agent 30 and the sheet member 50 for peeling can be enlarged. Therefore, the adhesive 30 can be easily peeled from the semiconductor substrate 10. Further, since the recess 62 of the support substrate 20 is formed in the peripheral edge 61 slightly inside the outer peripheral edge, the strength of the outer peripheral edge of the support substrate 20 can be ensured.

(Second embodiment)
Next, a second embodiment of the present invention will be described with reference to FIGS. Note that this embodiment is different from the first embodiment only in the shape of the concave portion of the support substrate, and the others are the same as in the first embodiment, so the same portions are denoted by the same reference numerals and detailed description is omitted. To do.

7 is a plan view showing the support substrate, and FIG. 8 is a cross-sectional view taken along the line CC in FIG.
As shown in FIGS. 7 and 8, the support substrate 120 is formed in substantially the same shape as the semiconductor substrate 10 in plan view. The surface 22 of the support substrate 120 has a flat central portion. Here, a recess 24 is formed in the outermost peripheral portion 23 of the surface 22 of the support substrate 120. The recess 24 is formed over the entire circumference of the support substrate 120. In addition, the bottom surface 25 of the recess 24 is flat and formed so as to be substantially parallel to the surface 22.

The recess 24 is formed by a method such as etching or mechanical grinding. In addition, the depth d and width w of the concave portion 24 and the thickness D of the support substrate 120 are formed in substantially the same size as in the first embodiment.

According to the present embodiment, the recess 24 of the support substrate 20 is formed in the outermost peripheral portion 23 of the support substrate 20.
Since it comprised in this way, the convex part 33 of the adhesive agent 30 is formed in the outermost periphery part of the adhesive agent 30. FIG. That is, since the convex portion 33 is formed at a position closer to the starting point at which the adhesive 30 is peeled from the semiconductor substrate 10, the adhesive 30 can be peeled from the semiconductor substrate 10 more easily.

(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIGS. Note that this embodiment is different from the first embodiment only in the shape of the concave portion of the support substrate, and the others are the same as in the first embodiment, so the same portions are denoted by the same reference numerals and detailed description is omitted. To do.

FIG. 9 is a plan view showing the support substrate, and FIG. 10 is a cross-sectional view taken along line EE in FIG.
As shown in FIGS. 9 and 10, the support substrate 130 is formed in substantially the same shape as the semiconductor substrate 10 in plan view. The surface 22 of the support substrate 130 has a flat central portion. Here, a recess 63 is intermittently formed in the circumferential direction in the peripheral edge 61 inside the outermost peripheral portion of the surface 22 of the support substrate 130. That is, the recess 63 is formed along the outer periphery of the support substrate 130. Further, the bottom surface 25 of the recess 63 is flat and formed so as to be substantially parallel to the surface 22.

The recess 63 is formed by a method such as etching or mechanical grinding. In addition, the depth d and width w of the recess 63 and the thickness D of the support substrate 130 are formed to be substantially the same size as in the first embodiment.

According to this embodiment, the recess 63 of the support substrate 130 is intermittently formed in the circumferential direction 61 on the inner peripheral edge 61 from the outermost peripheral portion of the support substrate 130.
Since it comprised in this way, it becomes possible to further improve the intensity | strength of the peripheral part 61 of the support substrate 130. FIG. Therefore, the recess 63 can be formed in consideration of the balance between the strength of the support substrate 130 and the adhesion between the peeling sheet member 50 and the support substrate 130.

(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described with reference to FIGS. Note that this embodiment is different from the first embodiment only in the shape of the concave portion of the support substrate, and the others are the same as in the first embodiment, so the same portions are denoted by the same reference numerals and detailed description is omitted. To do.

FIG. 11 is a plan view showing the support substrate, and FIG. 12 is a cross-sectional view taken along the line FF in FIG.
As shown in FIGS. 11 and 12, the support substrate 140 is formed in substantially the same shape as the semiconductor substrate 10 in plan view. The surface 22 of the support substrate 140 has a flat central portion. Here, the recess 65 is formed only at a position along the orientation flat portion 11 of the surface 22 of the support substrate 140. That is, the recess 65 is formed along the end of the orientation flat portion 11 of the support substrate 140. Further, the bottom surface 25 of the recess 65 is formed flat and is formed to be substantially parallel to the surface 22.

The recess 65 is formed by a method such as etching or mechanical grinding. In addition, the depth d and width w of the recess 65 and the thickness D of the support substrate 140 are formed in substantially the same size as in the first embodiment.

According to the present embodiment, the recess 65 of the support substrate 140 is formed only in a portion along the orientation flat portion 11 of the support substrate 140.
With this configuration, the adhesive 30 can be easily separated from the semiconductor substrate 10 by forming the linear protrusions 33 in the adhesive 30 while further ensuring the strength of the support substrate 140.

The technical scope of the present invention is not limited to the above-described embodiment, and includes various modifications made to the above-described embodiment without departing from the spirit of the present invention. In other words, the specific structures, shapes, dimensions, materials, and the like given in the embodiments are merely examples, and can be changed as appropriate.

For example, as shown in FIGS. 13 and 14, a concave portion 64 formed in a columnar shape may be intermittently formed in the circumferential direction on the peripheral edge portion 61 of the surface 22 of the support substrate 150.
Moreover, in this embodiment, although the description in the case of sticking the peeling sheet member only to the top surface of the convex portion of the adhesive was made, it was stuck not only to the top surface but also to the surface of the central portion of the adhesive Then, since adhesive force increases more, it is desirable.

It is a top view which shows the semiconductor substrate in embodiment of this invention. It is sectional drawing which follows the AA line in FIG. It is a top view which shows the support substrate in 1st embodiment of this invention. It is sectional drawing which follows the BB line in FIG. It is explanatory drawing which shows the manufacturing method of the semiconductor substrate in embodiment of this invention. It is explanatory drawing which shows the continuation of the manufacturing method of FIG. It is a top view which shows the support substrate in 2nd embodiment of this invention. It is sectional drawing which follows the CC line in FIG. It is a top view which shows the support substrate in 3rd embodiment of this invention. It is sectional drawing which follows the EE line in FIG. It is a top view which shows the support substrate in 4th embodiment of this invention. It is sectional drawing which follows the FF line in FIG. It is a top view which shows another aspect in the support substrate of this invention. It is sectional drawing which follows the GG line in FIG. It is explanatory drawing which shows the adhesion state of the conventional semiconductor substrate and a support substrate. It is explanatory drawing which shows the adhesion state of the conventional adhesive agent and the sheet member for peeling.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor substrate 11 ... Orientation flat part 12 ... Front surface (1st surface of a semiconductor substrate) 14 ... Back surface (2nd surface of a semiconductor substrate) 20,120,130,140,150 ... Support substrate 22 ... Front surface (support substrate surface) First surface) 23 ... outermost peripheral part 24, 62, 63, 64, 65 ... concave part 25 ... bottom face 30 ... adhesive 31 ... burr 33 ... convex part 50 ... peeling sheet member 61 ... peripheral part d ... depth of concave part h2 ... Bali height

Claims (7)

An adhesive application step of applying an adhesive to the first surface of the semiconductor substrate;
An adhesion step of bonding the first surface of the support substrate to the semiconductor substrate via the adhesive;
A processing step of processing the second surface of the semiconductor substrate;
A separation step of separating the support substrate from the adhesive;
An adhering step of adhering a peeling sheet member to the adhesive; and
In the manufacturing method of a semiconductor device having a peeling step of peeling the adhesive from the semiconductor substrate together with the peeling sheet member,
In the vicinity of the peripheral edge of the first surface of the support substrate, a concave portion having a flat bottom surface is formed,
In the bonding step, the concave portion is filled with the adhesive to form a convex portion having a flat top surface in the vicinity of the peripheral portion of the adhesive,
In the attaching step, the peeling sheet member is attached to at least the top surface of the convex portion of the adhesive. The depth of the concave portion of the support substrate is formed deeper than the height of the burr of the adhesive that protrudes from the peripheral edge of the first surface of the support substrate along the side surface of the support substrate in the bonding step. The method of manufacturing a semiconductor device according to claim 1, wherein:   The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor substrate and the support substrate have the same diameter.   The method for manufacturing a semiconductor device according to claim 1, wherein the concave portion of the support substrate is formed in an outermost peripheral portion of the support substrate. The manufacturing method of a semiconductor device according to claim 1, wherein the concave portion of the support substrate is continuously formed in the circumferential direction inside the outermost peripheral portion of the support substrate. Method.   The manufacturing method of a semiconductor device according to claim 1, wherein the concave portion of the support substrate is intermittently formed in the circumferential direction inside the outermost peripheral portion of the support substrate. Method.   The method for manufacturing a semiconductor device according to claim 1, wherein the concave portion of the support substrate is formed only in a portion along the orientation flat portion of the support substrate.

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