JP2008182180A - Heating apparatus and semiconductor manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heating apparatus and semiconductor manufacturing apparatus which carry out a fine heating temperature control easily. <P>SOLUTION: A heating apparatus for heating a semiconductor substrate placed on a support arranged in a reaction chamber of a semiconductor manufacturing apparatus includes a plurality of heat source units, each of which has a heat source lamp being attachable and detachable, and being attached by changing orientations in the circumferential direction. A semiconductor manufacturing apparatus includes: a reaction chamber to which a reaction gas is supplied; a support arranged in the reaction chamber; and a heating apparatus which heats a semiconductor substrate placed on the support, wherein the heating apparatus includes a plurality of heat source units, each having an attachable and detachable heat source lamp, which is also attachable by changing orientations in the circumferential direction. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a heating apparatus and a semiconductor manufacturing apparatus. Specifically, the present invention relates to a heating apparatus and a semiconductor manufacturing apparatus for manufacturing, for example, a silicon single crystal semiconductor substrate or a semiconductor substrate with an oxide film.

  Along with higher integration and higher performance of semiconductor integrated circuit elements, a silicon substrate having an epitaxial structure is often used as a starting material for the elements. An epitaxial silicon substrate is obtained by epitaxially vapor-depositing a silicon single crystal thin film on a silicon single crystal substrate. The manufacturing method includes several silicon single crystal substrates that can be processed in one process. There are dozens of batch systems and single-wafer systems that process one by one.

  This conventional epitaxial vapor deposition apparatus includes a reaction gas introduction port for introducing a reaction gas from outside into the apparatus, a support that supports the silicon single crystal substrate, and a transparent chamber that surrounds the support and forms a reaction chamber space. It consists of a quartz glass plate and a heating device for heating the support.

  In the epitaxial growth apparatus, when the support is heated by a heating device, the silicon single crystal substrate on the support is heated. When the silicon single crystal substrate reaches a desired temperature, a reaction gas is introduced from the outside into a reaction chamber formed of a quartz glass plate. The reaction gas is decomposed in the reaction chamber, and a silicon single crystal thin film is epitaxially grown on the silicon single crystal substrate.

  By the way, a temperature of about 600 to 1200 ° C. is necessary for silicon epitaxial growth, and a temperature difference due to non-uniform heating affects growth results such as a growth rate and a film characteristic. There was a problem of variation. In particular, nonuniform heating in a high temperature region causes crystal defects called dislocations and slips in a single crystal lattice, which limits device characteristics and makes the device malfunction.

  In order to solve such problems, for example, a heat treatment apparatus as shown in FIG. 6 has been proposed. FIG. 6 is a diagram for explaining a conventional heat treatment apparatus. In Patent Document 1, the heat treatment apparatus 110 includes a housing 112 in which a processing chamber 111 for processing a plurality of wafers 101 serving as substrates to be processed is formed. The housing 112 is constructed in a cylindrical hollow shape by combining an upper cup 113 formed in a cylindrical shape with an open bottom surface and a lower cup 114 formed in a cylindrical shape with an open top surface. Quartz is used between the lower cup 114 and a transparent plate 115 formed in a disc shape, and an exhaust port 116 communicates with the inside and outside of the processing chamber 111 in a part of the side wall of the lower cup 114. The exhaust port 116 is connected to an exhaust device for exhausting the processing chamber 111 to below atmospheric pressure, and a wafer loading / unloading port 117 is opened at another location on the side wall of the lower cup 114. , A gate valve 118 that opens and closes the air bag loading / unloading port 117 is installed. An insertion hole 119 is formed on the center line of the bottom wall of the lower cup 114, and a gas supply is provided on the center line of the insertion hole 119. A gas supply pipe 121 connected to the apparatus 120 is piped, and a plurality of gas outlets 122 are opened at the upper end of the gas supply pipe 121 so as to blow out gas radially at intervals in the circumferential direction. A rotating shaft 123 formed in a cylindrical shape is concentrically arranged outside the gas supply pipe 121 and is rotatably supported by a plurality of bearing devices 124, and the rotating shaft 123 is driven to rotate by a rotation driving device 125. A base 130 formed in the shape of a circular dish having an outer diameter slightly smaller than that of the processing chamber 111 is horizontally supported at the upper end of the rotating shaft 123. The shaft 130 is rotatably supported by a bearing device 129 installed on the bottom surface of the lower cup 114, and four rotating shafts 131 are arranged on the bottom wall of the base 130 at equidistant positions in a circumferential direction on a concentric circle. The planetary gears 132 of the planetary gear mechanism are fixed to the upper end portions of the rotary shafts 131, respectively. It is meshed with a sun gear 133 fixed to an intermediate portion of the gas supply pipe 121 so as to be able to roll, and electrostatically holds and holds the wafer 101 as a substrate to be processed on the upper end surfaces of the four planetary gears 132. The chucks 134 are horizontally installed so as to rotate integrally, and the upper cup 113 passes through the transmission plate 115 to heat the wafer 101 in the processing chamber 111. The heater 140 includes a plurality of heating lamps 141 in which tungsten-halogen lamps are formed in a circle line shape, and a reflector 142 that reflects the heat of the heating lamps 141 downward. .

JP 2003-347228 A

  However, the conventional heat treatment apparatus uses a plurality of heating lamps formed in a circle line shape, but finer heating temperature control is desired.

  The present invention has been made in view of the above points, and an object thereof is to provide a heating apparatus and a semiconductor manufacturing apparatus capable of easily performing fine heating temperature control.

  In order to achieve the above object, a heating device of the present invention is a heating device for heating a semiconductor substrate placed on a support disposed in a reaction chamber of a semiconductor manufacturing apparatus, and is detachable. It is characterized by comprising a plurality of heat source units each having a heat source lamp that can be mounted with its orientation changed in the circumferential direction.

  Here, the direction of the heat source lamp with respect to the semiconductor substrate can be controlled for each heat source unit, and the heating temperature distribution of the semiconductor substrate can be controlled for each heat source unit by the heat source lamp that can be attached and detached and can be attached by changing the direction in the circumferential direction.

  In the heating device of the present invention, when the external shape of the heat source unit is hexagonal, the heat source unit can cover a flat surface, and can efficiently heat a circular object. A plurality of heat source units can be spread on a circular semiconductor substrate or support without power loss, and moreover, a plurality of heat source units can be arranged adjacent to each other. A hexagonal heating element group applied to the body surface can be formed.

  In the heating device of the present invention, when the heat source unit has a reflecting plate that reflects light emitted from the heat source lamp, heating using the reflecting plate is possible, and the heat source lamp has a cylindrical shape and is also reflective. When arranged substantially parallel to the plate, the distance between the reflector and the heat source lamp can be easily adjusted.

  In the heating device of the present invention, when the distance between the heat source lamp and the reflecting plate can be adjusted, the reflection of light by the reflecting plate can be adjusted.

  Further, in the heating device of the present invention, when the reflector is covered with a gold film, it has a high reflectance with respect to light having a wavelength in the infrared region emitted from the heat source lamp.

  In the heating device of the present invention, the reflector is detachable and can be attached by changing the direction in the circumferential direction. When the outer shape of the reflector is hexagonal, the orientation of the heat source lamp is not changed and the reflector is changed. The heating temperature distribution of the semiconductor substrate can be controlled by changing only the direction of the heat source, and the trouble of changing the structure of the electric supply to the heat source lamp can be saved because the direction of the heat source lamp is not changed.

  Further, in the heating device of the present invention, when the partition wall is disposed between the heat source units, the diffusion of light can be suppressed and the light can be concentrated on the semiconductor substrate.

  In order to achieve the above object, the semiconductor manufacturing apparatus of the present invention includes a reaction chamber to which a reaction gas is supplied, a support disposed in the reaction chamber, and a semiconductor placed on the support. A semiconductor manufacturing apparatus including a heating device for heating a substrate, wherein the heating device includes a plurality of heat source units each having a heat source lamp that is detachable and attachable in a circumferential direction. It is characterized by that.

  Here, since the direction of the heat source lamp with respect to the semiconductor substrate can be controlled by the heat source lamp that is attachable and detachable and can be mounted in the circumferential direction, the heating temperature distribution of the semiconductor substrate can be controlled.

  Moreover, in the semiconductor manufacturing apparatus of the present invention, when the heat source unit has a hexagonal outer shape, the heat source unit can cover a flat surface, and can efficiently heat a circular object. A plurality of heat source units can be spread on a circular semiconductor substrate or support without a large power loss, and moreover, a plurality of heat source units can be arranged adjacent to each other. A hexagonal heating element group applied to the support surface can be formed.

  Further, in the semiconductor manufacturing apparatus of the present invention, when the heat source unit has a reflecting plate that reflects light emitted from the heat source lamp, heating using the reflecting plate is possible, and the heat source lamp is cylindrical. When arranged substantially parallel to the reflector, the distance between the reflector and the heat source lamp can be easily adjusted.

  Further, in the semiconductor manufacturing apparatus of the present invention, the reflector can be attached and detached and can be attached by changing the direction in the circumferential direction. If the outer shape of the reflector is hexagonal, the direction of the heat source lamp is not changed and the reflector is reflected. The heating temperature distribution of the semiconductor substrate can be controlled by changing only the direction of the plate, and the trouble of changing the structure of supplying electricity to the heat source lamp can be saved because the direction of the heat source lamp is not changed.

  Further, in the semiconductor manufacturing apparatus of the present invention, when the distance between the heat source lamp and the reflection plate can be adjusted, the reflection of light by the reflection plate can be adjusted.

  Moreover, in the semiconductor manufacturing apparatus of the present invention, when the reflector is covered with a gold film, it has a high reflectance with respect to light having a wavelength in the infrared region emitted from the heat source lamp.

  Moreover, in the semiconductor manufacturing apparatus of this invention, when a partition is arrange | positioned between heat-source units, the spreading | diffusion of light can be suppressed and light can be concentrated on a semiconductor substrate.

The heating device according to the present invention can easily perform fine heating temperature control.
The semiconductor manufacturing apparatus according to the present invention can easily perform fine heating temperature control.

Hereinafter, embodiments of the present invention will be described with reference to the drawings to facilitate understanding of the present invention.
FIG. 1 is a schematic diagram illustrating a mode in which heat source lamps of a heating apparatus to which the present invention is applied are arranged concentrically. In FIG. 1, a heating device 1 includes a circular main body 2 and a plurality of heat source units 2A that are detachably attached to the main body 2 and that can be attached with their orientations changed in the circumferential direction. A partition wall 4 made of aluminum covered with a film is arranged. Each of the plurality of heat source units reflects the light in the infrared region and has both ends inserted into a hexagonal reflecting plate 2B that is covered with a gold film and a hole formed in the reflecting plate 2B. And four cylindrical heat source lamps (halogen lamps or the like) 3 arranged substantially parallel to each other and in an arch shape. Further, the heat source lamp 3 is disposed substantially parallel to the reflecting plate 2B, and can adjust the distance from the reflecting plate 2B to be closer to or away from the reflecting plate 2B. A blower opening 1 </ b> A is formed at the center of the main body 2.
Further, since the heat source lamps 3 in each heat source unit 2A are arranged concentrically with respect to the center of the main body 2, in FIG. 1, eleven lamp rows are formed in the radial direction, and currents in the respective rows are obtained. By changing, the heating temperature distribution of the support and the heating temperature distribution of the semiconductor substrate can be controlled, and the heating temperature distribution of the semiconductor substrate can be made uniform.

Here, a halogen lamp is taken as an example of the heat source lamp. However, any lamp can be used as long as the semiconductor substrate can be heated. For example, an infrared lamp may be used. Moreover, as long as the partition and the reflecting plate are made of a material capable of reflecting the light in the infrared region emitted from the heat source lamp, the partition and the reflecting plate are not necessarily made of aluminum covered with a gold film.
Further, if the heat source unit has a heat source lamp that is detachable and can be mounted with its orientation changed in the circumferential direction, the outer shape of the reflector plate, that is, the outer shape of the heat source unit does not necessarily have to be a hexagon. It may be octagonal, and the shape of all heat source units is not necessarily hexagonal, and a hexagonal heat source unit and a heat source unit of another shape such as a square or octagonal heat source unit It may be used.
In addition, if the heat source unit has a heat source lamp that is detachable and can be mounted with its orientation changed in the circumferential direction, it is not always necessary to use a reflector, for example, without using a reflector. The outer shape may be a hexagon.
In addition, the heat source lamp does not necessarily have a cylindrical shape as long as the heat source lamp is detachable and can be mounted with its orientation changed in the circumferential direction.

FIG. 2 is a schematic diagram illustrating a second arrangement of the heat source lamps in the heating apparatus to which the present invention is applied. In FIG. 2, a CCD camera connection port 5 for connecting a CCD camera for observing the reaction chamber of the semiconductor manufacturing apparatus, a reaction chamber, and each heat source unit mounted extending in the left and right radial directions from the center of the main body 2 The first support temperature measurement for connecting the quartz temperature measuring port 6 for connecting the thermometer for measuring the quartz temperature of the quartz glass plate forming the first temperature meter for measuring the temperature of the support. A port 7 and a second support temperature measuring port 8 for connecting a second thermometer for measuring the temperature of the support are formed.
Further, the heat source unit 2 </ b> A attached to extend in the six radial directions from the center of the main body 2 has the heat source lamps 3 arranged along the radial direction except for the outermost side.

  Here, if the heat source unit has a heat source lamp that is detachable and can be attached in a circumferential direction, the CCD camera connection port, the quartz temperature measurement port, and the first support temperature measurement port are not necessarily provided. And the 2nd support body temperature measurement port does not need to be formed, and at least 1 of these may be formed.

FIG. 3 is a schematic diagram illustrating a third arrangement of the heat source lamps in the heating apparatus to which the present invention is applied. In FIG. 3, the heat source lamps 3 of the heat source unit 2A are all arranged in the same direction.
Although not shown in FIGS. 1 to 3, an electric control system is used on the back side of the reflector 2B, and this electric control system supplies electric power to the heat source lamps of the respective heat source units.
1 to 3, the heat source lamp 3 is removed, rotated 90 degrees in the circumferential direction, changed in direction, and attached to rotate the heat source lamp 3 90 degrees in the heat source unit 2A. Therefore, fine heating temperature control can be performed, and the heating temperature distribution of the semiconductor substrate can be made uniform.

4A and 4B are schematic diagrams for explaining a reflector used in a heat source unit of a heating apparatus to which the present invention is applied. FIG. 4A is a plan view, and FIG. 4B is A in FIG. FIG. 4C is a cross-sectional view showing a state in which the arrangement of the heat source lamps is changed.
In FIG. 4A, the hexagonal reflector 2B is detachably attached to the main body of the heating device by a fastener 2E and can be attached by changing the direction in the circumferential direction. A hole 2C to be inserted is formed.
Further, as shown in FIG. 4B, the reflector 2B is formed with four grooves 2D having semicircular arc-shaped cross sections extending substantially parallel to each other, and the heat source lamp 3 is arranged along the grooves 2D. The
Further, as shown in FIG. 4C, the heat source lamp 3 is removed and turned in the circumferential direction, and the heat source lamp 3 is disposed across the groove 2D having a semicircular arc cross section.
Here, an example in which the groove 2D having a semicircular arc-shaped cross section is formed on the reflecting plate 2B is described. However, if the light in the infrared region is reflected, the groove is not necessarily formed on the reflecting plate. In addition, the reflector may be flat, and the cross-sectional shape of the groove does not necessarily have to be a semicircular arc, and may be, for example, a V shape.

FIG. 5 is a schematic diagram for explaining an epitaxial growth apparatus to which the present invention is applied. In FIG. 5, an epitaxial growth apparatus (an example of a semiconductor manufacturing apparatus) 9 includes a reaction chamber, a disk-shaped support body 15 disposed in the reaction chamber and supporting a plurality of semiconductor substrates (silicon substrates) 16, And a heating device 1 arranged around the reaction chamber and on both upper and lower sides of the support. In addition, the reaction chamber is configured such that the upper and lower dome-shaped quartz glass plates 10 are fixed with screws so as to be pressed by a stainless upper clamp 11 and a stainless lower clamp 12. Further, a reactive gas inlet 13 and a reactive gas outlet 14 are formed between the upper and lower dome-shaped quartz glass plates 10.
Further, the heating device 1 is a heating device as shown in FIG. 1 and the like, and a rotation member 17 is attached to the center of the support 15 to rotate the support 15.

When epitaxial growth is performed using the epitaxial growth apparatus 9, a plurality of semiconductor substrates 16 are mounted on a disk-like support 15 in a reaction chamber, and a reaction containing trichlorosilane gas and hydrogen gas is performed from a reaction gas inlet 13. Gas is introduced into the reaction chamber. A reaction gas containing trichlorosilane gas and hydrogen gas flows in the vicinity of the semiconductor substrate 16 and is irradiated with light from a heating device arranged around the reaction chamber, so that the semiconductor substrate 16 is heated, and the heat and the reaction gas cause Epitaxial growth is performed.
Here, an example in which a plurality of semiconductor substrates are mounted is given. However, as long as the semiconductor substrate can be heated by a heating device, a plurality of semiconductor substrates may not necessarily be provided, and a single semiconductor substrate may be provided.

  Further, although an example using a silicon substrate is given, any substrate capable of performing epitaxial growth may be used. For example, a gallium arsenide (GaAs) substrate or a zinc telluride (ZnTe) substrate may be used. Good. Any material gas may be used as long as an epitaxial layer can be grown on the substrate. For example, when a gallium arsenide substrate is used, a gas containing Ga is used and a zinc telluride substrate is used. For this, a gas containing Te is used.

Next, the epitaxial growth process will be described.
First, the semiconductor substrate 16 is heated to 600 to 1200 ° C. by the heat source unit 2 </ b> A of the heating device 1 while the support 15 supporting the semiconductor substrate 16 is rotated by the rotation member 17.
Next, a reaction gas containing trichlorosilane gas and hydrogen gas is introduced into the reaction chamber from the reaction gas inlet 13 to perform epitaxial growth.
Here, trichlorosilane gas is introduced into the reaction chamber as a material gas in the reaction gas, but any gas containing silicon atoms may be used. For example, monosilane gas, dichlorosilane gas, or silicon tetrachloride gas is reacted. It may be introduced indoors.

  Here, although an epitaxial growth apparatus is mentioned as an example of a semiconductor manufacturing apparatus, it may not necessarily be an epitaxial growth apparatus, for example, a thermal oxidation furnace, a CVD (chemical vapor deposition) apparatus, or an RTP (rapid thermal processing) apparatus. Also good.

  As described above, according to the present invention, since the plurality of heat source units each have the heat source lamp that can be attached and detached and can be attached by changing the direction in the circumferential direction, the direction of the heat source lamp with respect to the semiconductor substrate is controlled for each heat source unit. Since the heating temperature distribution of the semiconductor substrate can be controlled, fine heating temperature control can be easily performed. Thereby, uniform heating temperature distribution of the semiconductor substrate and the support can be realized.

  Moreover, since the external shape of the heat source unit is hexagonal, the heat source unit can cover a flat surface, can efficiently heat a circular object, and without causing a large power loss, Multiple heat source units can be spread on a circular semiconductor substrate or support, and moreover, multiple heat source units can be placed adjacent to each other, so a hexagonal heating that gives a favorable radiant flux pattern to the semiconductor substrate surface or support surface Element groups can be formed, and zone control can be performed in several semiconductor substrate regions. Thereby, it can contribute to realization of uniform heating temperature distribution of a semiconductor substrate or a support.

  Further, since the heat source unit has a reflecting plate that reflects light emitted from the heat source lamp, heating using the reflecting plate is possible, and the heat source lamp is cylindrical and substantially parallel to the reflecting plate. Since it is arranged, it becomes easy to adjust the distance between the reflector and the heat source lamp. Thereby, it can contribute to realization of uniform heating temperature distribution of a semiconductor substrate or a support.

In addition, when the distance between the heat source lamp and the reflection plate is adjustable, the reflection of light by the reflection plate can be adjusted.
Further, since the heat source lamp is disposed along the groove having a semicircular arc in cross section, or the heat source lamp is disposed across the groove, the heating temperature distribution of the semiconductor substrate can be changed. Thereby, it can contribute to realization of uniform heating temperature distribution of a semiconductor substrate or a support.

  In addition, since the reflector is covered with a gold film, it has a high reflectance with respect to light having a wavelength in the infrared region emitted from the heat source lamp.

  In addition, the reflector can be attached and detached, and can be mounted by changing the direction in the circumferential direction. The outer shape of the reflector is hexagonal, so the direction of the heat source lamp is not changed, and only the direction of the reflector is changed. The heating temperature distribution of the substrate can be controlled, and since the direction of the heat source lamp is not changed, the trouble of changing the structure of the electric supply to the heat source lamp can be saved.

  Further, since the partition walls are arranged between the heat source units, the diffusion of light can be suppressed and the light can be concentrated on the semiconductor substrate.

It is the schematic explaining the aspect which has arrange | positioned the heat source lamp of the heating apparatus to which this invention is applied concentrically. It is the schematic explaining the 2nd arrangement | positioning of the heat source lamp in the heating apparatus to which this invention is applied. It is the schematic explaining the 3rd arrangement | positioning of the heat source lamp in the heating apparatus to which this invention is applied. It is the schematic explaining the reflecting plate used for the heat-source unit of the heating apparatus to which this invention is applied. It is the schematic explaining the epitaxial growth apparatus to which this invention is applied. It is a figure explaining the conventional heat processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Heating device 1A Air blower 2 Main body 2A Heat source unit 2B Reflector 2C Hole 2D Groove 2E Fastener 3 Heat source lamp 4 Bulkhead 5 CCD camera connection port 6 Quartz temperature measurement port 7 First support body temperature measurement port 8 Second support Body temperature measuring port 9 Epitaxial growth apparatus 10 Quartz glass plate 11 Upper clamp 12 Lower clamp 13 Reactive gas inlet 14 Reactive gas outlet 15 Support 16 Semiconductor substrate 17 Rotating member

Claims (14)

A heating device for heating a semiconductor substrate placed on a support disposed in a reaction chamber of a semiconductor manufacturing apparatus,
A heating apparatus comprising a plurality of heat source units each having a heat source lamp that is attachable and detachable and can be attached in a circumferential direction. The heating device according to claim 1, wherein an outer shape of the heat source unit is a hexagon. The heat source unit includes a reflector that reflects light emitted from the heat source lamp,
The heating device according to claim 1, wherein the heat source lamp has a cylindrical shape and is disposed substantially parallel to the reflecting plate. The heating apparatus according to claim 3, wherein a distance between the heat source lamp and the reflection plate is adjustable. The heating apparatus according to claim 3, wherein the reflector is covered with a gold film. The reflector is detachable and can be attached in a circumferential direction.
The heating device according to claim 3, wherein an outer shape of the reflecting plate is a hexagon. The heating apparatus according to claim 1, wherein a partition wall is disposed between the heat source units. A semiconductor manufacturing apparatus comprising a reaction chamber to which a reaction gas is supplied, a support disposed in the reaction chamber, and a heating device for heating a semiconductor substrate placed on the support,
The heating apparatus includes a plurality of heat source units each having a heat source lamp that is detachable and can be mounted in a circumferential direction. The semiconductor manufacturing apparatus according to claim 8, wherein an outer shape of the heat source unit is a hexagon. The heat source unit includes a reflector that reflects light emitted from the heat source lamp,
The semiconductor manufacturing apparatus according to claim 8, wherein the heat source lamp has a cylindrical shape and is disposed substantially parallel to the reflecting plate. The semiconductor manufacturing apparatus according to claim 10, wherein a distance between the heat source lamp and the reflector is adjustable. The semiconductor manufacturing apparatus according to claim 10, wherein the reflector is covered with a gold film. The reflector is detachable and can be attached in a circumferential direction.
The external shape of the said reflecting plate is a hexagon. The semiconductor manufacturing apparatus of Claim 10 characterized by the above-mentioned. The semiconductor manufacturing apparatus according to claim 8, wherein a partition wall is disposed between the heat source units.

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