JP2008035594A - 半導体集積回路およびそれを備えた電子機器 - Google Patents
半導体集積回路およびそれを備えた電子機器 Download PDFInfo
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- JP2008035594A JP2008035594A JP2006204578A JP2006204578A JP2008035594A JP 2008035594 A JP2008035594 A JP 2008035594A JP 2006204578 A JP2006204578 A JP 2006204578A JP 2006204578 A JP2006204578 A JP 2006204578A JP 2008035594 A JP2008035594 A JP 2008035594A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000003990 capacitor Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/37—Converter circuits
- H05B45/3725—Switched mode power supply [SMPS]
- H05B45/38—Switched mode power supply [SMPS] using boost topology
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
【解決手段】半導体集積回路101は、入力電圧を昇圧し、昇圧した電圧を負荷へ出力するチャージポンプ1と、チャージポンプ1の出力電圧に基づいてチャージポンプ1へ電圧を出力し、かつチャージポンプ1の出力電圧に基づいてチャージポンプ1へ出力する電流の上限値を決定するチャージポンプ制御回路11とを備える。
【選択図】図1
Description
また本発明のある局面に係わる電子機器は、半導体集積回路を有する電子機器であって、半導体集積回路は、入力電圧を昇圧し、昇圧した電圧を負荷へ出力するチャージポンプと、チャージポンプの出力電圧に基づいてチャージポンプへ電圧を出力し、かつチャージポンプの出力電圧に基づいてチャージポンプへ出力する電流の上限値を決定するチャージポンプ制御回路とを備える。
図1は、本発明の実施の形態に係る電子機器の構成を示す図である。図1を参照して、電子機器201は、半導体集積回路101と、コンデンサC1〜C3と、LED(Light Emitting Diode)21と、抵抗R3と、PWM(パルス幅変調:Pulse Width Modulation)制御回路22と、スイッチSW1とを備える。半導体集積回路101は、チャージポンプ1と、チャージポンプ制御回路11とを備える。チャージポンプ制御回路11は、レギュレータ2と、コンパレータ3と、抵抗R1およびR2とを含む。
Claims (4)
- 入力電圧を昇圧し、前記昇圧した電圧を負荷へ出力するチャージポンプと、
前記チャージポンプの出力電圧に基づいて前記チャージポンプへ電圧を出力し、かつ前記チャージポンプの出力電圧に基づいて前記チャージポンプへ出力する電流の上限値を決定するチャージポンプ制御回路とを備える半導体集積回路。 - 前記チャージポンプ制御回路は、
前記チャージポンプの出力電圧および所定電圧を比較し、前記比較結果を表わす信号を出力するコンパレータと、
前記コンパレータから受けた信号に基づいて前記チャージポンプへ出力する電流の上限値を決定するレギュレータとを備え、
前記コンパレータは、ヒステリシス特性を有する請求項1記載の半導体集積回路。 - 前記負荷はLEDである請求項1記載の半導体集積回路。
- 半導体集積回路を有する電子機器であって、
前記半導体集積回路は、
入力電圧を昇圧し、前記昇圧した電圧を負荷へ出力するチャージポンプと、
前記チャージポンプの出力電圧に基づいて前記チャージポンプへ電圧を出力し、かつ前記チャージポンプの出力電圧に基づいて前記チャージポンプへ出力する電流の上限値を決定するチャージポンプ制御回路とを備える電子機器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006204578A JP4912067B2 (ja) | 2006-07-27 | 2006-07-27 | 半導体集積回路およびそれを備えた電子機器 |
CN2007101287691A CN101114793B (zh) | 2006-07-27 | 2007-07-12 | 半导体集成电路和包括该电路的电子设备 |
US11/780,724 US7622900B2 (en) | 2006-07-27 | 2007-07-20 | Semiconductor integrated circuit supplying voltage to a load using a charge pump and electronic device including the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006204578A JP4912067B2 (ja) | 2006-07-27 | 2006-07-27 | 半導体集積回路およびそれを備えた電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008035594A true JP2008035594A (ja) | 2008-02-14 |
JP4912067B2 JP4912067B2 (ja) | 2012-04-04 |
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JP2006204578A Expired - Fee Related JP4912067B2 (ja) | 2006-07-27 | 2006-07-27 | 半導体集積回路およびそれを備えた電子機器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7622900B2 (ja) |
JP (1) | JP4912067B2 (ja) |
CN (1) | CN101114793B (ja) |
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US8559898B2 (en) | 2010-04-20 | 2013-10-15 | Rf Micro Devices, Inc. | Embedded RF PA temperature compensating bias transistor |
US9214865B2 (en) | 2010-04-20 | 2015-12-15 | Rf Micro Devices, Inc. | Voltage compatible charge pump buck and buck power supplies |
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US8913967B2 (en) | 2010-04-20 | 2014-12-16 | Rf Micro Devices, Inc. | Feedback based buck timing of a direct current (DC)-DC converter |
US8947157B2 (en) | 2010-04-20 | 2015-02-03 | Rf Micro Devices, Inc. | Voltage multiplier charge pump buck |
US8712349B2 (en) | 2010-04-20 | 2014-04-29 | Rf Micro Devices, Inc. | Selecting a converter operating mode of a PA envelope power supply |
US9900204B2 (en) | 2010-04-20 | 2018-02-20 | Qorvo Us, Inc. | Multiple functional equivalence digital communications interface |
US8842399B2 (en) | 2010-04-20 | 2014-09-23 | Rf Micro Devices, Inc. | ESD protection of an RF PA semiconductor die using a PA controller semiconductor die |
US8942651B2 (en) | 2010-04-20 | 2015-01-27 | Rf Micro Devices, Inc. | Cascaded converged power amplifier |
US9577590B2 (en) | 2010-04-20 | 2017-02-21 | Qorvo Us, Inc. | Dual inductive element charge pump buck and buck power supplies |
US8565694B2 (en) | 2010-04-20 | 2013-10-22 | Rf Micro Devices, Inc. | Split current current digital-to-analog converter (IDAC) for dynamic device switching (DDS) of an RF PA stage |
US8913971B2 (en) | 2010-04-20 | 2014-12-16 | Rf Micro Devices, Inc. | Selecting PA bias levels of RF PA circuitry during a multislot burst |
US8515361B2 (en) | 2010-04-20 | 2013-08-20 | Rf Micro Devices, Inc. | Frequency correction of a programmable frequency oscillator by propagation delay compensation |
US8958763B2 (en) | 2010-04-20 | 2015-02-17 | Rf Micro Devices, Inc. | PA bias power supply undershoot compensation |
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CN102761235A (zh) * | 2011-04-28 | 2012-10-31 | 李姣姣 | 一种半导体电路装置 |
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2006
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-
2007
- 2007-07-12 CN CN2007101287691A patent/CN101114793B/zh not_active Expired - Fee Related
- 2007-07-20 US US11/780,724 patent/US7622900B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
US20080024097A1 (en) | 2008-01-31 |
CN101114793A (zh) | 2008-01-30 |
JP4912067B2 (ja) | 2012-04-04 |
CN101114793B (zh) | 2011-02-16 |
US7622900B2 (en) | 2009-11-24 |
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