JP2008028196A - Semiconductor light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve luminance by suppressing temperature elevation by efficiently radiating heat generated from light emitting diodes. <P>SOLUTION: Light emitting diodes 15, 28 are mounted on optical substrates 16, 29, and heat radiating substrates 17, 30 constituting light transmission spaces 18, 31 with the light emitting diodes disposed therein are stacked to configure unit light emitting modules 3, 4. The plurality of unit light emitting modules are stacked while optically communicating the light transmission spaces with each other. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device including a light emitting diode (LED), a semiconductor laser, or the like (generically referred to as a light emitting diode in this specification).

  Semiconductor light-emitting devices, such as light-emitting diodes, have many features such as small size and light weight, color developability, stability, or long life characteristics, and are used in various applications as a light source in place of or in lieu of white light bulbs and fluorescent lamps. It is used. However, the light emitting diode is small as a light source, and sufficient luminance per one cannot be obtained as compared with a white light bulb or a fluorescent lamp. In light-emitting diodes, even if high luminance is supported by supplying a large current, there is a limit in that light-emitting efficiency is saturated when a predetermined current density is reached.

  In a light emitting diode, an increase in the amount of light can be dealt with by increasing the chip area (the area of the light emitting surface). However, not all of the emitted light is effectively taken into the optical system due to etendue restrictions. In light emitting diodes, for example, by mounting a large number of light emitting diodes on a wiring board as a unit, it is possible to cope with higher brightness by the unit, but the characteristics of downsizing and weight reduction are impaired and the same problem as expansion of the chip area is caused. Arise.

  Patent Document 1 discloses a light emitting diode in which a light emitting layer is sandwiched between a P-type cladding layer and an n-type cladding layer to form a diode structure layer (active layer), and a plurality of diode layers are stacked via a contact layer. It is disclosed. According to the light emitting diode of Patent Document 1, the emitted light of the diode layer is superimposed and emitted even though the light emitting area is equal as compared with the conventional light emitting diode having a single diode layer. Therefore, it is possible to increase the luminance while maintaining the etendue.

Japanese Patent Laid-Open No. 2005-19874

  By the way, in the light emitting diode, it is necessary to perform efficient heat dissipation because the light emitting efficiency is lowered due to the relatively high heat generated from the active layer rising in the sealing resin layer and gradually increasing in temperature. There is. In the light-emitting diode of Patent Document 1 described above, the light emission efficiency of each active layer is significantly reduced due to the high temperature caused by the heat generated from each active layer stacked in multiple layers. The amount of emitted light cannot be obtained, so that the luminance is not so high. In such a light emitting diode, the active layer or the like may be damaged due to high temperature.

  Therefore, an object of the present invention is to provide a semiconductor light emitting device that maintains etendue and achieves high luminance.

  A semiconductor light emitting device according to the present invention that achieves the above-described object has a light emitting diode that emits light of a predetermined wavelength, and is mounted on an optical substrate having transmission characteristics and heat conduction characteristics of light of a predetermined wavelength, and on the optical substrate. A plurality of unit light emitting modules are configured by laminating a heat dissipation substrate in which each light emitting diode is disposed to constitute a light guide space. In the semiconductor light emitting device, each unit light emitting module is laminated by optically communicating the light guide space portions of the respective heat dissipation substrates with each other, and the light emitted from the lower layer side that transmits the optical substrate is guided by the light guide space portion of each layer. The light is transmitted through the light and guided to the upper layer side, and the light is emitted in an increased state.

  In the semiconductor light emitting device, the plurality of stacked unit light emitting modules can efficiently dissipate the heat generated from the light emitting diodes by the heat dissipating substrate provided in each of the unit light emitting modules, and the temperature rise is suppressed, so that the light emission efficiency is maintained. . In the semiconductor light emitting device, the emitted light efficiently emitted from the light emitting diodes of each unit light emitting module is guided through the upper optical substrate and the light guide space, and is gradually increased in quantity and emitted. .

  According to the semiconductor light emitting device of the present invention, the light emitting diode is mounted on the optical substrate, and the unit light emitting module is configured by laminating the heat dissipating substrate in which the light emitting diode is arranged to form the light guide space portion. Since each unit light emitting module is laminated by optically communicating the space portions with each other, heat generated from the light emitting diodes in the unit light emitting modules of each layer is dissipated through the heat dissipation substrate provided for each. The temperature rise is suppressed and the emitted light is emitted stably, and the emitted light emitted from each is gradually increased by being guided through the upper optical substrate and the light guide space. Since the light is emitted from the uppermost layer, the amount of emitted light per unit area is increased to increase the luminance.

  Hereinafter, a semiconductor light emitting device 1 shown as an embodiment of the present invention will be described in detail with reference to the drawings. As shown in FIG. 1, the semiconductor light emitting device 1 emits a first unit light emitting module 2 that emits first emitted light L1, and two layers stacked on the first unit light emitting module 2 to emit second emitted light L2. The second unit light emitting module 3 and the third unit light emitting module 4 for emitting the third emitted light L3, and the base heat dissipation substrate 5 on which the first unit light emitting module 2 is laminated are provided. The semiconductor light-emitting device 1 increases the amount of emitted light per unit area by increasing the amount of the second emitted light L2 and the third emitted light L3 with respect to the first emitted light L1, thereby increasing the luminance.

  The semiconductor light emitting device 1 is mounted on a wiring board 6 such as a control board of an electronic device, for example, with the base heat dissipation board 5 as a mounting portion. In the semiconductor light emitting device 1, a base heat radiating substrate 5 formed of a copper plate or the like having high thermal conductivity characteristics is connected to heat radiating means such as a heat sink or a heat radiating fan (not shown), so that efficient heat radiating is performed by the heat radiating means together with natural heat radiating. Is called. The semiconductor light emitting device 1 is not limited to the three-layer structure that emits the first emission light L1 to the third emission light L3, and is configured by further stacking multilayer unit light emission modules on the first unit light emission module 2. Of course, it may be.

  In the semiconductor light emitting device 1, the first unit light emitting module 2 includes a first light emitting diode 7 and a first heat radiating substrate 8, and the first light emitting diode 7 is formed in the first heat radiating substrate 8 in the light emitting diode housing space 9. It is arranged with insulation. Since the first unit light emitting module 2 uses a light emitting diode that is generally provided as the first light emitting diode 7, a detailed description thereof is omitted. For example, an active layer is stacked between clad layers to emit light of a predetermined wavelength. A light emitting layer (active layer) is formed, and the light emitting layer is configured by sealing with a sealing resin such as an epoxy resin having transmission characteristics with respect to light of a predetermined wavelength.

  In the first unit light emitting module 2, the first light emitting diode 7 is connected to a terminal of the first wiring pattern 10 in which an electrode (not shown) provided on the bottom surface side is formed on the bottom surface side of the first heat dissipation substrate 8 with insulation. As a result, it is mounted on the base heat dissipation board 5 via the first heat dissipation board 8. In the first unit light emitting module 2, the first distribution pattern 10 is routed to the side of the first heat dissipation substrate 8, and is connected to the wiring substrate 6 through a connection portion (not shown). In the first unit light emitting module 2, when the first light emitting diode 7 is supplied with a predetermined driving voltage from the first wiring pattern 10, the first unit light emitting module 2 emits the first emitted light L 1 having a predetermined wavelength from the light emitting layer.

  The first unit light emitting module 2 includes an opening portion in which the first heat dissipation substrate 8 is formed of, for example, a copper plate having high thermal conductivity characteristics and has an opening size larger than the outer shape of the first light emitting diode 7 and penetrates in the thickness direction. A light emitting diode housing space 9 is formed. The first heat dissipation substrate 8 is stacked on the base heat dissipation substrate 5 so that the first light emitting diode 7 is disposed in the light emitting diode housing space 9. The first heat radiating substrate 8 suppresses the high temperature by efficiently conducting the heat generated from the first light emitting diode 7 to the base heat radiating substrate 5 and radiating it by emitting the first outgoing light L1.

  In the first unit light emitting module 2, a first sealing resin layer 11 is formed in the light emitting diode housing space 9 of the first heat dissipation substrate 8 on which the first light emitting diode 7 is disposed. The first sealing resin layer 11 has a transmission characteristic of the first outgoing light L1 emitted from the first light-emitting diode 7 and has an refractive index equal to or slightly larger than that of the sealing resin of the first light-emitting diode 7. The light emitting diode housing space 9 is filled with a resin material such as resin. The first sealing resin layer 11 holds the first light emitting diode 7 in the light emitting diode housing space 9 and suppresses the reflection of the first outgoing light L1 at the interface with the sealing resin layer, thereby reducing the first outgoing light. L1 is emitted efficiently.

  In the first unit light emitting module 2, a reflective film 12 made of an aluminum thin film or the like is formed on the main surface of the base heat radiating substrate 5 on which the first heat radiating substrate 8 is laminated, corresponding to the light emitting diode housing space 9. The reflective film 12 reflects a part of the first emitted light L1 emitted from the first light emitting diode 7 and wrapping around the main surface of the base heat dissipation substrate 5 toward the opening side of the light emitting diode housing space 9, thereby The utilization efficiency of the first emitted light L1 in the one-unit light emitting module 2 is improved.

  The first unit light-emitting module 2 includes a first wiring that is located on the side of the light-emitting diode housing space 9 of the first heat dissipation substrate 8 and that has a through hole facing a part of the first wiring pattern 10 described above. A hole 13 is formed. The first unit light emitting module 2 forms a first interlayer wiring 14 that is connected to the first wiring pattern 10 while maintaining insulation from the first heat dissipation substrate 8 in the first wiring hole 13, and this first interlayer wiring The wiring board 6 is connected to the second unit light emitting module 3 and the third unit light emitting module 4 which will be described in detail later through 14.

  In the 1st unit light emitting module 2 comprised as mentioned above, it becomes high temperature with the heat | fever which generate | occur | produces when the 1st light emitting diode 7 radiate | emits 1st emitted light L1. In the first unit light emitting module 2, the heat generated from the first light emitting diode 7 is efficiently conducted to the base heat radiating substrate 5 through the first heat radiating substrate 8 to dissipate heat, thereby suppressing the temperature rise. In the first unit light emitting module 2, the first emitted light Ll is emitted in a stable state from the first light emitting diode 7 and is supplied to the second unit light emitting module 3 from the opening of the light emitting diode housing space 9. .

  In the semiconductor light emitting device 1, the second unit light emitting module 3 is stacked on the first unit light emitting module 2 described above, and the third unit light emitting module 4 is stacked on the second unit light emitting module 3. In the semiconductor light emitting device 1, the first emitted light L1 emitted from the first unit light emitting module 2 is supplied to the second unit light emitting module 3, and further the second emitted light L2 emitted from the second unit light emitting module 3. At the same time, it is supplied to the third unit light emitting module 4 and the first emitted light L1 to the third emitted light L3 emitted from the first unit light emitting module 2 to the third unit light emitting module 4 are emitted as the entire emitted light L. To be.

  The second unit light emitting module 3 includes a second light emitting diode 15, a first optical substrate 16 on which the second light emitting diode 15 is mounted, and a second heat dissipation substrate 17 stacked on the first optical substrate 16. In the second unit light emitting module 3, the second light emitting diode 15 is mounted on the first optical substrate 16 and the first light guide space 18 formed in the second heat dissipation substrate 17 stacked on the first optical substrate 16. Placed in. The second unit light emitting module 3 uses a light emitting diode having the same specifications as the first light emitting diode 7 as the second light emitting diode 15, and emits the second emitted light L <b> 2 having the same wavelength as the first unit light emitting module 2. .

  In the second unit light emitting module 3, the second light emitting diode 15 is connected to a terminal of a second wiring pattern 19 in which an electrode (not shown) provided on the bottom side is formed on the first optical substrate 16. The second unit light emitting module 3 is not described in detail, but the second wiring pattern 19 is routed to the side of the first optical substrate 16, and the second wiring hole 20 formed through the first optical substrate 16. It is connected to the second interlayer wiring 21 formed inside.

  The second unit light emitting module 3 has a wiring board via the first interlayer wiring 14 by connecting the second interlayer wiring 21 with the first interlayer wiring 14 of the first unit light emitting module 2 described above. 6 wiring patterns. In the second unit light emitting module 3, the second light emitting diode 15 is supplied with a predetermined drive voltage via the first wiring pattern 10, the first interlayer wiring 14, and the second interlayer wiring 21 described above, and thereby the light emitting layer 15 The second emitted light L2 having a predetermined wavelength is emitted.

  In the second unit light emitting module 3, the first optical substrate 16 has a larger outer dimension than the light emitting diode housing space 9 formed in the first heat dissipation substrate 8 of the first unit light emitting module 2 described above. The light emitting diode housing space 9 is stacked in close contact with the first heat dissipation substrate 8 so as to close the light emitting diode housing space 9. The first optical substrate 16 radiates heat generated from the second light emitting diode 15 and a light guiding function that causes the first emitted light L1 emitted from the first unit light emitting module 2 to enter the second unit light emitting module 3. Has a heat dissipation function. Therefore, the first optical substrate 16 is formed using, for example, a SiC (silicon carbide) substrate, a sapphire substrate, or a GaN (gallium nitride) substrate having the transmission characteristics of the first outgoing light L1 and the high thermal conductivity characteristics.

  In the second unit light emitting module 3, a first AR coating layer (anti-reflection treatment coating) 22 is formed on the first optical substrate 16. The first AR coating layer 22 is formed on the bottom surface of the first optical substrate 16 that faces the surface of the first sealing resin layer 11 that constitutes the emission surface on at least the first unit light emitting module 2 side. The first AR coat layer 22 functions to reduce the reflection of the first emitted light L1 from the first light emitting diode 7 on the bottom surface of the first optical substrate 16 so that the first emitted light L1 is efficiently incident.

  In the second unit light emitting module 3, the second heat radiating substrate 17 has a larger outer dimension than the first optical substrate 16 and a thickness larger than the height of the second light emitting diode 15 due to a copper plate or the like having high thermal conductivity characteristics. It is formed. The second heat dissipation board 17 has an opening dimension that is larger than the outer dimension of the second light-emitting diode 15 and substantially the same as the light-emitting diode housing space 9 on the first unit light-emitting module 2 side, and is arranged in the thickness direction. A first light guide space 18 that penetrates is formed. In the second unit light emitting module 3, the second heat radiating substrate 17 is laminated on the first optical substrate 16 so that the second light emitting diode 15 is disposed in the first light guide space 18. The second unit light emitting module 3 is stacked on the first unit light emitting module 2 in a state where the first light guide space portion 18 communicates with the light emitting diode housing space portion 9.

  Also in the second unit light emitting module 3, the second sealing resin layer 23 is formed in the first light guide space 18. The second sealing resin layer 23 also has transmission characteristics of the first emitted light L1 and the second emitted light L2 emitted from the second light emitting diode 15, and is the same as or slightly larger than the sealing resin of the second light emitting diode 15. The first light guide space 18 is filled with a resin material such as an epoxy resin having a refractive index. The second sealing resin layer 23 also holds the second light emitting diode 15 in the first light guide space 18 and suppresses the reflection of the second emitted light L2 at the interface so that the second emitted light L2 is efficiently generated. To be emitted.

  In the second unit light emitting module 3, the second heat radiating substrate 17 is connected to the first heat radiating substrate 8 of the first unit light emitting module 2 via the first heat conductor 24. The first thermal conductor 24 has a high thermal conductivity characteristic such as copper and has a frame shape that surrounds the entire outer periphery of the first optical substrate 16 with a metal material having a thickness substantially equal to that of the first optical substrate 16. It is formed. The first heat conductor 24 integrates the second heat dissipation substrate 17 with the first heat dissipation substrate 8 and integrates it with the base heat dissipation substrate 5 through the first heat dissipation substrate 8. Therefore, the second unit light emitting module 3 constitutes a heat radiating means in which the second heat radiating board 17 is integrated with the base heat radiating board 5 so that the heat generated from the second light emitting diode 15 is efficiently radiated.

  In the second unit light emitting module 3, a first filling resin layer 25 is formed so as to fill a gap formed between the outer peripheral portion of the first optical substrate 16 and the inner peripheral portion of the first thermal conductor 24. Is done. For example, a silicon material or the like is used for the first filling resin layer 25, and the first filling resin layer 25 efficiently conducts heat from the first optical substrate 16 that becomes high temperature by heat generated from the second light emitting diode 15 to the first heat conductor 24. At the same time, the strain between the first optical substrate 16 and the first thermal conductor 24 that have greatly different linear expansion coefficients is absorbed to prevent generation of cracks and the like.

  In the second unit light emitting module 3 configured as described above, the first emitted light L1 emitted from the first light emitting diode 7 of the first unit light emitting module 2 is stored in the light emitting diode with respect to the first optical substrate 16. The light enters from the facing part through the space 9. In the second unit light emitting module 3, since the first AR coating layer 22 is formed on the bottom surface of the first optical substrate 16, the first emitted light L <b> 1 is suppressed from being reflected and efficiently incident on the first optical substrate 16. Thus, the light use efficiency can be improved. In the second unit light emitting module 3, the first outgoing light L <b> 1 is transmitted through the first optical substrate 16 to enter the first light guide space 18, and is guided through the first light guide space 18. It supplies to the 3rd unit light emitting module 4 from the opening part.

  In the second unit light emitting module 3, the second emitted light L2 is emitted from the second light emitting diode 15, and the second emitted light L2 is guided in the first light guide space 18 and described above from the opening. The light is supplied to the third unit light emitting module 4 together with the first outgoing light L1. In the second unit light emitting module 3, the first outgoing light L1 and the second outgoing light L2 are guided through the first light guide space 18 in which the second sealing resin layer 23 is formed, thereby reducing the loss. Reduced and supplied to the third unit light emitting module 4.

  Also in the 2nd unit light emitting module 3, it becomes high temperature with the heat | fever generate | occur | produced when the 2nd light emitting diode 15 radiate | emits the 2nd emitted light L2. Also in the second unit light emitting module 3, the heat generated from the second light emitting diode 15 is efficiently conducted to the base heat radiating substrate 5 through the first optical substrate 16 and the second heat radiating substrate 17 to dissipate heat. Is suppressed. In the second unit light emitting module 3, the second emitted light L2 is emitted from the second light emitting diode 15 in a stable state.

  The second unit light emitting module 3 has a third wiring hole 26 penetrating the second heat dissipation substrate 17 corresponding to the second wiring hole 20 formed in the first optical substrate 16 described above. A third interlayer wiring 27 that is connected to the above-described second interlayer wiring 21 and feeds power to a later-described third light emitting diode 26 of the third unit light emitting module 4 is formed in the third wiring hole 26.

  The semiconductor light emitting device 1 is configured in the same manner as the second unit light emitting module 3 described above in which the third unit light emitting module 4 has a basic configuration. The third unit light emitting module 4 also includes a third light emitting diode 28, a second optical substrate 29 on which the third light emitting diode 28 is mounted, and a third heat radiating substrate 30 stacked on the second optical substrate 29. In the third unit light emitting module 4, the third light emitting diode 28 is mounted on the second optical substrate 29, and the second light guide space 31 formed on the third heat dissipation substrate 30 stacked on the second optical substrate 29. Placed inside. In the third unit light emitting module 4, light emitting diodes having the same specifications as those of the first light emitting diode 7 and the second light emitting diode 15 described above are used as the third light emitting diode 28, and the first unit light emitting module 2 and the second unit light emitting module are used. The third emission light L3 having the same wavelength is emitted.

  Also in the third unit light emitting module 3, the third light emitting diode 28 is connected to a terminal of the third wiring pattern 32 in which an electrode (not shown) provided on the bottom side is formed on the second optical substrate 29. Although details are omitted, the third unit light emitting module 4 is provided on the second heat dissipation substrate 17 of the second unit light emitting module 3 described above, with the third wiring pattern 32 being routed to the side of the second optical substrate 29. It is connected to a fourth interlayer wiring 34 formed in a fourth wiring hole 33 formed so as to penetrate the second optical substrate 29 so as to face the third wiring hole 26.

  In the third unit light emitting module 4, the third wiring pattern 32 is connected to the third interlayer wiring 27 provided on the second heat dissipation substrate 17 of the second unit light emitting module 3 with the fourth interlayer wiring 33 described above. The third interlayer wiring 27 is connected to the wiring pattern of the wiring substrate 6 through the second interlayer wiring 21 and the first interlayer wiring 14 described above. In the third unit light emitting module 4, the third light emitting diode 28 is supplied with a predetermined driving voltage from the wiring substrate 6 side, and thereby emits third emitted light L 3 having a predetermined wavelength from the light emitting layer.

  In the third unit light emitting module 4, the second optical substrate 29 has substantially the same outer dimensions as the first optical substrate 16 of the second unit light emitting module 3 described above, and closes the first light guide space 18. In this way, the second heat dissipation substrate 17 is stacked in close contact. The second optical substrate 29 also guides the first emitted light L1 emitted from the first unit light emitting module 2 and the second emitted light L2 emitted from the second unit light emitting module 3 into the third unit light emitting module 4. It has an optical function and a heat radiation function for radiating heat generated from the third light emitting diode 28. Accordingly, the second optical substrate 29 is also formed by using, for example, a SiC substrate, a sapphire substrate, a GaN substrate, or the like having the transmission characteristics of the first emission light L1 and the second emission light L2 and the high thermal conductivity characteristics.

  Also in the third unit light emitting module 4, the second AR coating layer 35 is provided on the bottom surface of the second optical substrate 29 that faces at least the surface of the second sealing resin layer 23 that constitutes the emission surface on the second unit light emitting module 3 side. It is formed. The second AR coat layer 35 is also formed in the same manner as the first AR coat layer 22 on the second unit light emitting module 3 side described above, and reflects the first emitted light L1 and the second emitted light L2 on the bottom surface of the second optical substrate 29. It functions so as to reduce and efficiently enter the second optical substrate 29.

  The third unit light emitting module 4 also has a third heat radiating substrate 30 having a larger outer dimension than the second optical substrate 29 and a thickness larger than the height of the third light emitting diode 28 due to a copper plate or the like having high thermal conductivity characteristics. It is formed in the same manner as the second heat dissipation substrate 17 of the second unit light emitting module 3 described above. The third heat dissipation board 30 also has a light emitting diode housing space 9 of the first unit light emitting module 2 and the first light guide space 18 of the second unit light emitting module 3 which are larger than the outer dimensions of the third light emitting diode 28 and described above. The second light guide space portion 31 is formed so as to have substantially the same opening size as that of the first light guide space portion 31 and penetrates in the thickness direction. In the third unit light emitting module 4, the third heat radiating substrate 30 is stacked on the second optical substrate 29 so that the third light emitting diode 28 is disposed in the second light guide space 31. The third unit light emitting module 4 is stacked on the second unit light emitting module 3 in a state where the second light guide space portion 31 communicates with the light emitting diode housing space portion 9 and the first light guide space portion 18.

  Also in the third unit light emitting module 4, the third sealing resin layer 36 is formed in the second light guide space portion 31. The third sealing resin layer 36 also has transmission characteristics of the first emitted light L1, the second emitted light L2, and the third emitted light L3 emitted from the third light emitting diode 15, and seals the third light emitting diode 28. The second light guide space 31 is formed by filling a resin material such as an epoxy resin having the same or slightly larger refractive index as the resin. The third sealing resin layer 36 also holds the third light emitting diode 28 in the second light guide space 31 and suppresses the reflection of the third emitted light L3 at the interface so that the third emitted light L3 is efficiently generated. To be emitted.

  The third unit light emitting module 4 is connected by stacking the third heat radiating substrate 30 in close contact with the second heat radiating substrate 17 of the second unit light emitting module 3 via the second thermal conductor 37. The second thermal conductor 37 is also formed in a frame shape that surrounds the entire outer periphery of the second optical substrate 29 with a metal material having a high thermal conductivity characteristic such as copper and having a thickness substantially equal to that of the second optical substrate 29. Is done. The second heat conductor 37 integrates the third heat dissipation substrate 30 with the second heat dissipation substrate 17, and the base heat dissipation substrate via the second heat dissipation substrate 17, the first heat conductor 24 and the first heat dissipation substrate 8 described above. 5 and integrated. Therefore, the third unit light emitting module 4 constitutes heat radiation means in which the third heat radiation substrate 30 is integrated with the first heat radiation substrate 8, the second heat radiation substrate 17 and the base heat radiation substrate 5. Ensure that the generated heat is dissipated efficiently.

  In the third unit light emitting module 4, a second filling resin layer 38 is formed so as to fill a gap formed between the outer peripheral portion of the second optical substrate 29 and the inner peripheral portion of the second thermal conductor 37. Is done. The second filling resin layer 38 is also made of a silicon material or the like, and efficiently conducts heat from the second optical substrate 29 that becomes high temperature by heat generated from the third light emitting diode 28 to the second heat conductor 37. In addition, the strain between the second optical substrate 29 and the second thermal conductor 37 having different linear expansion coefficients is absorbed to prevent generation of cracks and the like.

  In the third unit light emitting module 4 configured as described above, with respect to the second optical substrate 29, the first unit light emitting module 2 from the first light guide space 18 of the second unit light emitting module 3 as described above. The first emitted light L1 emitted from the first light emitting diode 7 and the second emitted light L2 emitted from the second light emitting diode 15 of the second unit light emitting module 3 are incident. Also in the third unit light emitting module 4, since the second AR coating layer 35 is formed on the bottom surface of the second optical substrate 29, reflection of the first emitted light L <b> 1 and the second emitted light L <b> 2 is suppressed, and the second optical substrate 29. The light utilization efficiency can be improved by efficiently entering the light. In the third unit light emitting module 4, the first outgoing light L <b> 1 and the second outgoing light L <b> 2 are transmitted through the second optical substrate 29 to enter the second light guide space portion 31, and this second light guide space portion. The light is guided through 31 and emitted from the opening to the outside.

  In the third unit light emitting module 4, the third emitted light L3 is emitted from the third light emitting diode 28, and the third emitted light L3 is guided in the second light guide space 31 and described above from the opening thereof. The light is emitted to the outside together with the first emitted light L1 and the second emitted light L2. In the third unit light emitting module 4, the first emission light L <b> 1 to the third emission light L <b> 3 are guided through the second light guide space portion 31 in which the third sealing resin layer 36 is formed, thereby reducing loss. Reduced and emitted to the outside.

  Also in the 3rd unit light emitting module 4, it becomes high temperature with the heat | fever generate | occur | produced when the 3rd light emitting diode 28 radiate | emits the 3rd emitted light L3. Also in the third unit light emitting module 4, the heat generated from the third light emitting diode 28 is efficiently conducted to the base heat radiating substrate 5 through the second optical substrate 29 and the third heat radiating substrate 30 to dissipate heat. Is suppressed. In the third unit light emitting module 4, the third emitted light L <b> 3 is emitted in a stable state from the third light emitting diode 28.

  In the semiconductor light emitting device 1, as described above, the first unit light emitting module 2 that emits the first emitted light L1 from the first light emitting diode 7 and the second unit that emits the second emitted light L2 from the second light emitting diode 15 are used. The light emitting module 3 and the third unit light emitting module 4 that emits the third emitted light L3 from the third light emitting diode 28 are configured. In the semiconductor light emitting device 1, each of the first unit light emitting module 2 to the third unit light emitting module 4 includes a first heat radiating substrate 8, a second heat radiating substrate 17, and a third heat radiating substrate 30. , 17 and 30 efficiently radiate the heat generated from the light emitting diodes 7, 15 and 28 individually. Therefore, the semiconductor light emitting device 1 has a structure in which a plurality of light emitting diodes 7, 5, and 28 are stacked. However, since efficient heat dissipation is performed in each layer, the high temperature is suppressed and the emitted light is stable. L is emitted.

  In the semiconductor light emitting device 1, the first unit light emitting module 2 to the third unit light emitting module 4 are a first light guide space in which the light emitting diode housing space 9 in which the first light emitting diode 7 is disposed and the second light emitting diode 15 are disposed. The second light guide space portion 31 in which the portion 18 and the third light emitting diode 28 are disposed is laminated in a state of being in optical communication with each other via the first optical substrate 16 and the second optical substrate 29. In the semiconductor light emitting device 1, the first emitted light L <b> 1 emitted from the first unit light emitting module 2 is the first light guide space 18 of the second unit light emitting module 3 and the second light guide of the third unit light emitting module 4. The light is guided through the space 31 and emitted from the opening of the second light guide space 31 to the outside.

  In the semiconductor light emitting device 1, the second emitted light L <b> 2 emitted from the second unit light emitting module 3 is guided in the second light guide space 31 of the third unit light emitting module 4 and this second light guide. The light is emitted from the opening of the optical space 31 to the outside. Further, in the semiconductor light emitting device 1, the third emitted light L <b> 3 emitted from the third unit light emitting module 4 is emitted directly from the opening of the second light guide space 31 to the outside. Therefore, in the semiconductor light emitting device 1, the first emitted light L1 to the third emitted light L3 emitted from the first light emitting diode 7 to the third light emitting diode 28 arranged in the three layers are used as the emitted light L, so that the unit The amount of emitted light per area is increased to increase the brightness.

  Needless to say, the present invention is not limited to the configuration of the semiconductor light emitting device 1 described above as an embodiment. In the semiconductor light emitting device 1, an interlayer wiring connected to the wiring substrate 6 is formed in a wiring hole formed through each optical substrate or heat dissipation substrate to supply power to each light emitting diode. You may make it comprise the wiring structure which pulled out each layer wiring pattern to the side of each layer.

  In the semiconductor light emitting device 1, the sealing resin layers 11, 23, and 36 are formed in the respective layers to hold the light emitting diodes 7, 15, and 28 and reduce optical loss. 11, 23, and 36 are not particularly essential configurations. In the semiconductor light emitting device 1, the reflective film 12 is formed on the main surface of the base substrate 5 so as to correspond to the light emitting diode housing space 9 of the first unit light emitting module 2, but the reflective film 12 is essential. Not. In the semiconductor light emitting device 1, for example, the base substrate 5 is formed of aluminum or the like, and a portion facing the light emitting diode housing space 9 is mirror-finished so that an equivalent function can be achieved. .

  In the semiconductor light emitting device 1, the heat radiation path is formed by interposing the heat conductors 24, 37 between the heat radiation substrates 8, 17, 30 of the first unit light emitting module 2 to the third unit light emitting module 4, thereby radiating the base. Although integrated with the substrate 5, it is not limited to such a heat conducting structure. The semiconductor light emitting device 1 may have a structure in which, for example, a heat transfer portion that is bonded to the heat dissipation substrate on the upper layer or the lower layer is integrally formed on each of the heat dissipation substrates 8, 17, and 30.

  Further, in the semiconductor light emitting device 1 described above, the first unit light emitting module 2 to the third unit light emitting module 4 are each provided with light emitting diodes 7, 15, and 28 made of general light emitting diodes. It is not limited to such a configuration. The semiconductor light emitting device 40 shown in FIG. 2 as the second embodiment also includes a first unit light emitting module 41 that emits the first emitted light L1, a second unit light emitting module 42 that emits the second emitted light L2, and The third unit light emitting module 43 that emits the third emitted light L3 is configured by a stacked body.

  The semiconductor light emitting device 40 uses a light emitting diode having divided first light emitting layer 44 to third light emitting layer 46, and these light emitting layers 41 to 46 are used as the first unit light emitting module 41 to the third unit light emitting module 43, respectively. The arrangement is characterized. Since the semiconductor light emitting device 40 has the same configuration as that of the semiconductor light emitting device 1 described above, the corresponding parts are denoted by the same reference numerals and description thereof is omitted.

  Also in the semiconductor light emitting device 40, the first unit light emitting module 41 arranges the first light emitting layer 44 in the light emitting diode housing space 9 provided in the first heat dissipation substrate 8, and the second unit light emitting module 42 is the second light emitting layer. 45 is disposed in the first light guide space 18 provided on the second heat dissipation substrate 17, and the third unit light emitting module 43 has the second light guide space 31 provided with the third light emitting layer 46 on the third heat dissipation substrate 30. Place in. Also in the semiconductor light emitting device 40, the first unit light emitting module 41 to the third unit light emitting module 43 efficiently dissipate heat generated from the light emitting layers 44 to 46 individually by the heat dissipation substrates 8, 17, and 30. Therefore, the semiconductor light emitting device 40 also has a plurality of light emitting layers 44 to 46 and generates heat from each of them. However, efficient heat dissipation is performed in each layer, so that the high temperature is suppressed and the semiconductor light emitting device 44 is in a stable state. The emission light L is emitted.

  Also in the semiconductor light emitting device 40, the second unit light emitting module 42 and the third unit light emitting module 43, which are higher than the first unit light emitting module 41, are arranged in the light emitting diode housing space 9 in which the first light emitting layer 44 is disposed, The second light guide space 18 in which the light emitting layer 45 is disposed and the second light guide space 31 in which the third light emitting layer 46 is disposed are in optical communication with each other via the first optical substrate 16 and the second optical substrate 29. In such a state, they are laminated. Therefore, also in the semiconductor light emitting device 40, the first emitted light L <b> 1 emitted from the first unit light emitting module 41 is the second light emitting space 18 of the second unit light emitting module 42 and the second light of the third unit light emitting module 43. The light is guided through the light guide space 31 and emitted from the opening of the second light guide space 31 to the outside.

  Also in the semiconductor light emitting device 40, the second emitted light L2 emitted from the second unit light emitting module 42 is guided in the second light guide space 31 of the third unit light emitting module 43 and from the opening. It is emitted to the outside. In the semiconductor light emitting device 40, the third emitted light L3 emitted from the third unit light emitting module 43 is guided through the second light guide space 31 and directly emitted from the opening to the outside. Therefore, in the semiconductor light emitting device 40, the unit area is obtained by using the first emitted light L1 to the third emitted light L3 emitted from the respective light emitting layers 44 to 46 of the light emitting diode divided into three layers as the emitted light L. The amount of emitted light per hit is increased to increase the brightness.

  In the semiconductor light emitting device 40, the light emitting diode divided into the first light emitting layer 44 to the third light emitting layer 46 is used, but a light emitting diode in which the light emitting layer is further divided into multiple layers may be used. Of course. Further, in the semiconductor light emitting device 40, a light emitting diode obtained by dividing a light emitting diode and a light emitting layer may be used.

It is principal part sectional drawing of the semiconductor light-emitting device shown as 1st Embodiment. It is principal part sectional drawing of the semiconductor light-emitting device shown as 2nd Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device, 2 1st unit light emitting module, 3nd 2nd unit light emitting module, 4 unit light emitting module, 5 base heat sink board, 6 wiring board, 7 1st light emitting diode, 8 1st heat sink board, 9 light emitting diode accommodation space , 10 first wiring pattern, 11 first sealing resin layer, 12 reflective layer, 13 first wiring hole, 14 first interlayer wiring, 15 second light emitting diode, 16 first optical substrate, 17 second heat dissipation substrate, 18 1st light guide space part, 19 2nd wiring pattern, 20 2nd wiring hole, 21 2nd interlayer wiring, 22 1st AR coat layer, 23 2nd sealing resin layer, 24 1st heat conductor, 25 1st Filling resin layer, 26 3rd wiring hole, 27 3rd interlayer wiring, 28 3rd light emitting diode, 29 2nd optical board, 30 3rd heat dissipation board, 31 2nd light guide space part, 32 3rd wiring pattern , 33 4th wiring hole, 34 4th interlayer wiring, 35 2nd AR coating layer, 36 3rd sealing resin layer, 37 2nd heat conductor, 38 2nd filling resin layer, 40 semiconductor light emitting device, 41 1st Unit light emitting module, 42 2nd unit light emitting module, 43 3rd unit light emitting module, 44 1st light emitting layer, 45 2nd light emitting layer, 46 3rd light emitting layer

Claims (7)

A light emitting diode that emits light of a predetermined wavelength is mounted on an optical substrate having transmission characteristics and heat conduction characteristics of the predetermined wavelength light, and the light emitting diode is disposed on the optical substrate to guide the light guide space. A plurality of unit light emitting modules are configured by laminating the heat dissipation board that constitutes
Each of the unit light emitting modules is laminated by optically communicating the light guide space portions of the respective heat dissipation substrates with each other, and the emitted light from the lower layer side is guided through the optical substrate to the upper layer side. A semiconductor light emitting device characterized in that it is emitted and laminated.   The laminated body of the said several unit light emitting module is mounted on a base heat dissipation board, and each said heat dissipation board and the said base heat dissipation board are thermally conductively connected through a heat conductive member. Semiconductor light emitting device. The first layer unit light emitting module is constituted by the first unit light emitting module arranged in the light emitting diode housing space provided on the first heat dissipation substrate,
The first unit light emitting module is mounted on the base heat dissipation board, and the light emitting diode housing space and the light guide space are optically communicated on the first heat dissipation board to stack a plurality of the unit light emitting modules. 3. The semiconductor light emitting device according to claim 2, wherein the bodies are stacked.   3. The semiconductor light emitting device according to claim 2, wherein a reflective layer is formed on a main surface of the base heat dissipation substrate so as to face the stacked body of the unit light emitting modules or the light emitting diode of the first unit light emitting module.   The unit light emitting module is formed in at least a portion of the bottom surface portion of the optical substrate facing the light guide space portion, and suppresses reflection of outgoing light that is guided through the light guide space portion on the lower layer side and incident. 2. The semiconductor light emitting device according to claim 1, further comprising an antireflection film layer.   2. The semiconductor according to claim 1, wherein each of the unit light emitting modules is filled with a light transmissive resin material having a refractive index substantially equal to a sealing resin of the light emitting diode in each of the light guide space portions. Light emitting device. A light emitting diode having a plurality of light emitting layers that emit light having a predetermined wavelength is used,
A first unit light emitting module configured to form the first layer by disposing the first light emitting layer of the light emitting diode in the light emitting diode housing space of the first heat dissipation substrate;
Each upper layer light emitting layer of the light emitting diode is disposed on an optical substrate having transmission characteristics and heat conduction characteristics of the emitted light, and has a light guide space portion in which each light emitting layer is disposed on each optical substrate. It is composed of a plurality of upper unit light emitting modules formed by stacking heat dissipation substrates,
From the light emitting layer on the lower layer side, the upper unit light emitting module sequentially stacks the light guide space portion in optical communication with the light emitting diode housing space portion with respect to the first unit light emitting module. A semiconductor light emitting device characterized in that emitted light that is emitted is guided to an upper layer side and emitted.

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