JP2008021845A - Semiconductor light emitting device, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which can suppress variations in light output while achieving a high luminance by reducing the reflectivity of a light output surface, and to provide a method of manufacturing the device. <P>SOLUTION: A semiconductor layer laminate ST including a first cladding layer 11, an active layer 12, and a second cladding layer 13 is formed on a substrate 10; and an irregularity formation layer 16 is formed with the light output surface on the laminate. In this case, recesses 16r reaching the surface of the uppermost layer of the semiconductor laminate ST are formed in the irregularity formation layer 16 to form raises/recesses. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device and a method for manufacturing the same, and more particularly, to a semiconductor light emitting device with improved light extraction efficiency and higher luminance and a method for manufacturing the same.

  For example, LEDs (light emitting diodes) and LDs (laser diodes) are known as semiconductor light emitting elements, and they are widely used in light sources such as optical communication and optical pickups for optical disks, LED displays, outdoor and indoor display devices, and the like. It has been used and its applications are expanding further.

  For example, AlGaAs-based, AlGaInP-based, AlGaN-based, and the like are known as semiconductor materials constituting the semiconductor light-emitting element as described above. For example, AlGaInP-based materials have a wide energy band and have a wavelength of 560 nm to 680 nm. It is possible to use it for the material of the semiconductor light emitting element up to.

  For example, in Patent Document 1, in an LED which is a semiconductor light emitting element, unevenness is provided on the light extraction surface, the reflectance on the light extraction surface of the semiconductor light emitting element is reduced, and the light extraction efficiency is increased, thereby increasing the brightness. A method of realizing is disclosed.

As the LED, for example, an n-type cladding layer, an active layer, a p-type cladding layer, and the like are stacked on a substrate, and a contact layer is formed as the uppermost layer.
The surface of the contact layer is a light extraction surface in which irregularities are formed by etching and the reflectance is reduced.

However, the surface of the contact layer that becomes the light extraction surface is subjected to an etching process when forming the unevenness, but it is very difficult to control the depth and shape of the unevenness in the etching. As a result, there arises a problem that the light output varies.
Japanese Patent Laid-Open No. 2004-119839

  An object of the present invention is to provide a semiconductor light emitting device capable of suppressing variations in light output while reducing the reflectance of the light extraction surface to achieve high luminance and a method for manufacturing the same.

  In order to solve the above problems, a semiconductor light emitting device of the present invention includes a substrate, a semiconductor stacked body formed on the substrate and including a first cladding layer, an active layer, and a second cladding layer, and the semiconductor stacked body. An unevenness forming layer having a light extraction surface is formed on the unevenness forming layer, and a recess reaching the surface of the uppermost layer of the semiconductor laminate is formed in the unevenness forming layer.

  In the semiconductor light emitting device of the present invention, a semiconductor laminate including a first cladding layer, an active layer, and a second cladding layer is formed on a substrate, and an unevenness forming layer having a light extraction surface is formed thereon. Is formed. Here, the recesses reaching the surface of the uppermost layer of the semiconductor stacked body are formed in the recess-projection forming layer to configure the recesses.

  In order to solve the above problems, a method for manufacturing a semiconductor light emitting device according to the present invention includes a step of forming a semiconductor laminate including a first cladding layer, an active layer, and a second cladding layer on a substrate, and the semiconductor Forming a concavo-convex forming layer on the laminate, and forming a concavo-convex in the concavo-convex forming layer on the light extraction surface of the concavo-convex forming layer by forming a recess reaching the surface of the uppermost layer of the semiconductor laminate. Process.

  In the method for manufacturing a semiconductor light emitting device according to the present invention, a semiconductor stacked body including a first cladding layer, an active layer, and a second cladding layer is formed on a substrate, and then an unevenness forming layer is formed on the semiconductor stacked body. Form. Next, a recess reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the unevenness forming layer, and the unevenness is formed on the light extraction surface of the unevenness forming layer.

  In the semiconductor light emitting device of the present invention, the concave portion reaching the surface of the uppermost layer of the semiconductor laminate is formed in the concave / convex forming layer so that the concave portion is formed on the light extraction surface, and the depth of the concave portion depends on the film thickness of the concave / convex forming layer. As a result, the uneven shape is made uniform, and the light output variation can be suppressed while realizing high brightness by reducing the reflectance of the light extraction surface.

  Further, in the method for manufacturing a semiconductor light emitting device of the present invention, the concave portion reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the concave / convex forming layer to form the concave / convex on the light extraction surface. Therefore, the uneven shape can be made uniform, and the variation in the light output can be suppressed while reducing the reflectance of the light extraction surface to achieve high brightness.

  Hereinafter, a semiconductor light emitting device and a manufacturing method thereof according to embodiments of the present invention will be described with reference to the drawings.

First Embodiment A semiconductor light emitting device according to the present embodiment is an AlGaInP light emitting diode, and FIG. 1A is a cross-sectional view of the light emitting diode according to the present embodiment.
For example, an n-type cladding layer 11 having a thickness of about 1 μm made of n-type AlGaInP doped with Se, Si, Te, or the like on a GaAs substrate 10, an active layer 12 having a thickness of about 1 μm made of non-doped AlGaInP, Zn Alternatively, a p-type cladding layer 13 having a thickness of about 1 μm made of p-type AlGaInP doped with Mg, a current diffusion layer 14 having a thickness of about 1 μm made of p-type AlGaInP doped with Zn or Mg, and doped with Zn or Mg A semiconductor stacked body ST is formed by sequentially stacking contact layers 15 made of p-type GaP or p-type AlGaInP and having a thickness of about 0.5 μm.

An unevenness forming layer 16 having a light extraction surface is formed on the semiconductor stacked body ST. The unevenness forming layer 16 has a thickness of about 0.5 μm made of, for example, p-type Al _0.7 Ga _0.3 As.

Moreover, FIG.1 (b) is the principal part enlarged view which expanded the uneven | corrugated formation layer 16 part in Fig.1 (a).
A structure in which the concave portion 16r reaching the surface of the contact layer 15 which is the uppermost layer of the semiconductor stacked body ST is formed in the concave / convex forming layer 16 and the convex portion 16p is left, that is, the light extraction surface of the concave / convex forming layer 16 has irregularities. It is configured.

FIG. 2A is a plan view from the concave-convex forming layer side of the light emitting diode according to the present embodiment.
For example, on the unevenness forming layer 16, a p-electrode 17 having a rectangular pattern is formed at the edge of the unevenness forming layer 16.
The electrode 17 may be formed in a pattern of two sides facing each other at the edge of the concavo-convex forming layer 16 or another pattern.
Further, on the back side of the GaAs substrate 10, for example, an n electrode (not shown) is formed on the entire surface.

FIG. 2B is an enlarged plan view of the region of the unevenness forming layer 16 in FIG.
For example, the recesses 16r are formed in the regions R1 arranged in an array with an interval, and the region R2 between the regions R1 becomes the region of the protrusions 16p.
For example, the region R1 has a square shape of a ₁ = a ₂ = 1 μm, and the width of the region R2, which is the distance between R1, is about b ₁ = b ₂ = 1 μm. The width of R2 can be narrowed by design or the like, and a layout having substantially no region R2 is possible.

The unevenness forming layer 16 and the contact layer 15 which is the uppermost layer of the semiconductor stacked body ST are preferably formed of, for example, a semiconductor material having a different etching rate with respect to a predetermined etching agent.
Moreover, it is preferable that the uneven | corrugated formation layer 16 has a higher etching rate with respect to said predetermined etching agent than the contact layer 15 which is the uppermost layer of the semiconductor laminated body ST, for example.

  In the light emitting diode according to the present embodiment, a concave portion reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the concave / convex forming layer so that the light extraction surface has concave / convex portions, and the depth of the concave portion is the film thickness of the concave / convex forming layer. Therefore, the uneven shape can be made uniform, and the light output variation can be suppressed while reducing the reflectance of the light extraction surface to achieve high brightness.

  The depth A of the concave portion 16 r formed in the concave / convex forming layer 16, that is, the height (vertex) of the convex portion 16 p corresponds to the film thickness of the concave / convex forming layer 16. In the present embodiment, the thickness is about 0.5 μm, but the film thickness of the unevenness forming layer 16, that is, the depth A of the recess 16 r is preferably about 0.1 to 2 μm.

Next, a method for manufacturing a light emitting diode according to the present embodiment will be described with reference to FIGS. 3A to 3C which are cross-sectional views corresponding to FIG.
First, for example, an n-type cladding layer 11, an active layer 12, a p-type cladding layer 13, a current diffusion layer 14, and an AlGaInP-based semiconductor material are formed on a GaAs substrate 10 by MOCVD (metal organic chemical vapor deposition). The contact layer 15 is sequentially stacked to form the semiconductor stacked body ST.
Next, as shown in FIG. 3A, Al _0.7 Ga _0.3 As is deposited to a thickness of about 0.5 μm on the contact layer 15 by, eg, MOCVD, and has a light extraction surface. The unevenness forming layer 16 is formed.
Next, a resist film 18 having a pattern for protecting the region R2 and opening the region R1 is formed by a photolithography process.

Next, as shown in FIG. 3B, for example, the etching rate of the AlGaAs irregularity forming layer 16 is higher than the etching rate of the AlGaInP contact layer 15 which is the uppermost layer of the semiconductor stacked body ST. Etching is performed using a certain phosphoric acid so as to leave the convex portions 16 p in the concave-convex forming layer 16 using the resist film 18 as a mask, thereby forming concave portions 16 r reaching the surface of the contact layer 15.
From the difference in the etching rate, the contact layer 15 functions as an etching stopper, and irregularities with controlled etching in the depth direction can be formed.

  Next, as shown in FIG. 3C, the resist film 18 is removed, and the light emitting diode having the structure shown in FIGS. 1A and 1B can be manufactured.

  In the light emitting diode according to the present embodiment, a recess reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the unevenness forming layer to form unevenness on the light extraction surface, so the depth of the recess depends on the film thickness of the unevenness forming layer. Therefore, the uneven shape can be made uniform, and the light output variation can be suppressed while reducing the reflectance of the light extraction surface to achieve high brightness.

Second Embodiment FIG. 4 is an enlarged cross-sectional view of a concavo-convex forming layer portion of a light emitting diode according to this embodiment.
In the first embodiment, the bottom end of the recess 16r reaches the surface of the contact layer 15 which is the uppermost layer of the semiconductor stacked body. However, in the present embodiment, the surface of the contact layer 15 is located at the bottom of the recess 16r. 15s is exposed.
From the viewpoint of reducing the reflectance of the light extraction surface, the light extraction surface should have fewer surfaces parallel to the main surface of the substrate, and the contact layer exposed from the bottom of the recess 16r should have a smaller area.

Third Embodiment A semiconductor light emitting device according to this embodiment is an AlGaInP light emitting diode, and FIG. 5A is a cross-sectional view of the light emitting diode according to this embodiment.
Similar to the first embodiment, for example, an n-type cladding layer 11 having a thickness of about 1 μm made of n-type AlGaInP doped with Se, Si, Te, or the like on a GaAs substrate 10 and about 1 μm made of non-doped AlGaInP. Active layer 12 having a thickness, p-type cladding layer 13 having a thickness of about 1 μm made of p-type AlGaInP doped with Zn or Mg, and current diffusion layer having a thickness of about 1 μm made of p-type AlGaInP doped with Zn or Mg. 14, a semiconductor stacked body ST is formed by sequentially laminating a contact layer 15 having a thickness of about 0.5 μm made of p-type GaP doped with Zn or Mg or p-type AlGaInP.

An unevenness forming layer 16 having a light extraction surface is formed on the semiconductor stacked body ST. The unevenness forming layer 16 includes, for example, a p-type Al _0.65 Ga _0.35 As layer 16a, a p-type Al _0.70 Ga _0.30 As layer 16b, a p-type Al _0.75 Ga _0.25 As layer 16c, The p-type Al _0.80 Ga _0.20 As layer 16d is formed by laminating each film with a thickness of 0.1 μm, and the upper layer has a higher Al composition.

FIG. 5B is an enlarged view of a main part in which the concavo-convex forming layer 16 part in FIG. 5A is enlarged.
The concave / convex forming layer 16 has a structure in which the concave portion 16r reaching the surface of the contact layer 15 which is the uppermost layer of the semiconductor stacked body ST is formed and the convex portion 16p is left, and the concave and convex portions are formed on the light extraction surface of the concave / convex forming layer 16. Has been.

  In the light emitting diode according to the present embodiment, a concave portion reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the concave / convex forming layer so that the light extraction surface has concave / convex portions, and the depth of the concave portion is the film thickness of the concave / convex forming layer. Therefore, the uneven shape can be made uniform, and the light output variation can be suppressed while reducing the reflectance of the light extraction surface to achieve high brightness.

As described above, in the present embodiment, the concavo-convex forming layer is formed of a multi-layered laminate, and in particular, a layer whose composition changes stepwise is laminated.
Since the etching rate can be changed depending on the composition, the shape of the concave portion and the convex portion formed in the concave-convex forming layer can be more easily controlled by selecting the composition and the etching agent.

Next, a manufacturing method of the light emitting diode according to the present embodiment will be described with reference to FIGS. 6A to 6C which are cross-sectional views corresponding to FIG.
First, for example, an n-type cladding layer 11, an active layer 12, a p-type cladding layer 13, a current diffusion layer 14, and an AlGaInP-based semiconductor material are formed on a GaAs substrate 10 by MOCVD (metal organic chemical vapor deposition). The contact layer 15 is sequentially stacked to form the semiconductor stacked body ST.
Next, as shown in FIG. 6A, the p-type Al _0.65 Ga _0.35 As layer 16a and the p-type Al _0.70 Ga _0.30 As are formed on the contact layer 15 by, eg, MOCVD. The layer 16 b, the p-type Al _0.75 Ga _0.25 As layer 16 c, and the p-type Al _0.80 Ga _0.20 As layer 16 d are stacked with a thickness of 0.1 μm each to form the unevenness forming layer 16. .
Next, a resist film 18 having a pattern for protecting the region R2 and opening the region R1 is formed by a photolithography process.

Next, as shown in FIG. 6B, for example, the etching rate of the AlGaAs irregularity forming layer 16 is higher than that of the AlGaInP contact layer 15 which is the uppermost layer of the semiconductor stacked body ST. Etching is performed using a certain phosphoric acid so as to leave the convex portions 16 p in the concave-convex forming layer 16 using the resist film 18 as a mask, thereby forming concave portions 16 r reaching the surface of the contact layer 15.
From the difference in the etching rate, the contact layer 15 functions as an etching stopper, and irregularities with controlled etching in the depth direction can be formed.
The phosphoric acid has a higher etching rate and a higher lateral etching rate as the Al composition is larger. Therefore, as the upper layer having a larger Al composition as shown in FIG. 6B, the etching in the lateral direction becomes larger, and as shown in FIG.

  Next, as shown in FIG. 6C, the resist film 18 is removed, and the light emitting diode having the structure shown in FIGS. 5A and 5B can be manufactured.

  In the light emitting diode according to the present embodiment, a recess reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the unevenness forming layer to form unevenness on the light extraction surface, so the depth of the recess depends on the film thickness of the unevenness forming layer. Therefore, the uneven shape can be made uniform, and the light output variation can be suppressed while reducing the reflectance of the light extraction surface to achieve high brightness.

  In the present embodiment, the unevenness forming layer is formed by laminating layers whose composition changes stepwise, but as a configuration in which layers having different film thicknesses are laminated, the processing shape of the convex portion is controlled. Also good.

Fourth Embodiment FIG. 7 is an enlarged cross-sectional view of a concavo-convex forming layer portion of a light emitting diode according to this embodiment.
In the third embodiment, the concavo-convex formation layer formed by laminating layers whose composition changes in stages is configured such that the upper layer has a higher Al composition, but the concavo-convex formation layer 16 in this embodiment is For example, the p-type Al _0.80 Ga _0.20 As layer 16d, the p-type Al _0.75 Ga _0.25 As layer 16c, the p-type Al _0.70 Ga _0.30 As layer 16b, and the p-type Al _{0 .65} Ga _0.35 As layer 16a is formed by laminating each film with a thickness of 0.1 μm, and the lower the layer, the higher the Al composition.

Since the Al composition is higher in the lower layer, the etching in the lateral direction is larger in the etching for forming the unevenness, and the concave layer (convex portion) having a reverse taper shape can be obtained.
Furthermore, the inclination of the side surface of the concave portion (convex portion) can be made steep by selecting the composition of the stacked layers and the etching solution.
As described above, by controlling the Al composition and film thickness of AlGaAs, it is possible to form irregularities of a desired shape.

  In the light emitting diode according to the present embodiment, a recess reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the unevenness forming layer to form unevenness on the light extraction surface, so the depth of the recess depends on the film thickness of the unevenness forming layer. Therefore, the uneven shape can be made uniform, and the light output variation can be suppressed while reducing the reflectance of the light extraction surface to achieve high brightness.

Fifth Embodiment FIG. 8 is an enlarged cross-sectional view of a concavo-convex forming layer portion of a light emitting diode according to this embodiment.
In the present embodiment, the composition of the concavo-convex forming layer 16 is an Al _X Ga _(1-X) As layer, the Al composition continuously changes in the film thickness direction, the Al composition is higher (H) in the upper part, and in the lower part. The Al composition is low (L).

  By continuously changing the Al composition of AlGaAs, the shape of the concave portion (convex portion) can be a smooth slope, and irregularities with a desired shape can be formed.

  In the light emitting diode according to the present embodiment, a recess reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the unevenness forming layer to form unevenness on the light extraction surface, so the depth of the recess depends on the film thickness of the unevenness forming layer. Therefore, the uneven shape can be made uniform, and the light output variation can be suppressed while reducing the reflectance of the light extraction surface to achieve high brightness.

Sixth Embodiment FIG. 9 is a sectional view of a light emitting diode according to this embodiment.
In the light emitting diode according to the first embodiment, the first cladding layer 11 is divided into two layers of a lower first cladding layer 11a and an upper first cladding layer 11b, and a Bragg made of a material having a high refractive index and a low refractive index therebetween. The difference is that the reflective film 19 is formed.
By providing the Bragg reflection film, it is possible to reflect light absorbed by the substrate and extract light efficiently.
For example, the lower first cladding layer 11a and the upper first cladding layer 11b can be configured by depositing 0.5 μm of n-type AlGaInP doped with Se, Si, Te, or the like, and the Bragg reflection film 19 is formed of the lower first cladding. Between the layer 11a and the upper first cladding layer 11b, for example, 20 sets of Al _0.9 Ga _0.1 As (50 nm) / GaAs (40 nm) doped with Se, Si, Te, or the like are stacked. Yes.

In the light emitting diode according to the present embodiment, a recess reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the unevenness forming layer to form unevenness on the light extraction surface, so the depth of the recess depends on the film thickness of the unevenness forming layer. Therefore, the uneven shape can be made uniform, and the light output variation can be suppressed while reducing the reflectance of the light extraction surface to achieve high brightness.
Here, since the Bragg reflection film is formed as described above, it is possible to further increase the extraction efficiency from the light extraction surface side.
The Bragg reflection film according to the present embodiment is applicable to any of the first to fifth embodiments.

Seventh Embodiment FIG. 10 is a sectional view of a light emitting diode according to this embodiment.
In the light emitting diode according to the first embodiment, a resistance adjustment layer 20 made of, for example, GaAs or the like is formed between the unevenness forming layer 16 and the p electrode 17 in the same pattern as the p electrode 17. By sandwiching a low-resistance material layer such as GaAs, the resistance to the drive current flowing from the p-electrode 17 can be lowered and the drive capability can be increased.
As described above, when the resistance adjustment layer 20 made of GaAs is formed on the concavo-convex formation layer 16, etching with ammonia + hydrogen peroxide is performed in the pattern of the p electrode 17, so that the resistance adjustment layer 20 in an unnecessary region is formed. After removing, the unevenness forming layer is etched to form unevenness.

In the light emitting diode according to the present embodiment, a recess reaching the surface of the uppermost layer of the semiconductor stacked body is formed in the unevenness forming layer to form unevenness on the light extraction surface, so the depth of the recess depends on the film thickness of the unevenness forming layer. Therefore, the uneven shape can be made uniform, and the light output variation can be suppressed while reducing the reflectance of the light extraction surface to achieve high brightness.
The resistance adjustment layer according to this embodiment is applicable to any of the first to sixth embodiments.

The present invention is not limited to the above embodiment.
For example, various configurations other than those shown in the embodiment can be applied to the configuration of the semiconductor stacked body.
The etching is not particularly limited as long as a sufficient selection ratio between the concavo-convex processed layer and the layer below it can be secured.
Further, if the selection ratio can be ensured by etching, the present invention can be applied to semiconductor material systems other than AlGaInP and AlGaAs systems.
In addition, various modifications can be made without departing from the scope of the present invention.

The semiconductor light emitting device of the present invention can be applied to light emitting diodes that can be used for various light sources.
The method for manufacturing a semiconductor light emitting device of the present invention can be applied to a method for manufacturing a light emitting diode.

FIG. 1A is a cross-sectional view of a light-emitting diode according to the first embodiment of the present invention, and FIG. 1B is an enlarged view of a main part in which a concavo-convex forming layer 16 portion in FIG. . FIG. 2A is a plan view from the concave-convex forming layer side of the light emitting diode according to the first embodiment of the present invention, and FIG. 2B is an enlarged view of the concave-convex forming layer in FIG. It is a top view. 3A to 3C are cross-sectional views showing manufacturing steps of the method for manufacturing the light emitting diode according to the first embodiment of the present invention. FIG. 4 is an enlarged cross-sectional view of a concavo-convex forming layer portion of a light emitting diode according to a second embodiment of the present invention. FIG. 5A is a cross-sectional view of a light emitting diode according to a third embodiment of the present invention, and FIG. 5B is an enlarged view of a main part in which a concavo-convex forming layer portion in FIG. 6A to 6C are cross-sectional views illustrating manufacturing steps of a method for manufacturing a light emitting diode according to a third embodiment of the present invention. FIG. 7 is an enlarged cross-sectional view of a concavo-convex forming layer portion of a light emitting diode according to a fourth embodiment of the present invention. FIG. 8 is an enlarged cross-sectional view of a concavo-convex forming layer portion of a light emitting diode according to a fifth embodiment of the present invention. FIG. 9 is a cross-sectional view of a light emitting diode according to a sixth embodiment of the present invention. FIG. 10 is a cross-sectional view of a light emitting diode according to a seventh embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... GaAs substrate, 11 ... n-type cladding layer, 12 ... active layer, 13 ... p-type cladding layer, 14 ... current diffusion layer, 15 ... contact layer, 15s ... surface of contact layer, 16 ... concavo-convex forming layer, 16a ... p-type Al _0.65 Ga _0.35 As layer, 16b... p-type Al _0.70 Ga _0.30 As layer, 16c... p-type Al _0.75 Ga _0.25 As layer, 16d _{. 80} Ga _0.20 As layer, 16r ... concave portion, 16p ... convex portion, 17 ... p electrode, 18 ... resist film, 19 ... Bragg reflection layer, 20 ... resistance adjustment layer, ST ... semiconductor laminate, P1, P2 ... region

Claims (14)

A substrate,
A semiconductor laminate formed on the substrate and including a first cladding layer, an active layer, and a second cladding layer;
An unevenness forming layer having a light extraction surface formed on the semiconductor laminate, and
A concave / convex portion is formed in the concave / convex forming layer to form a concave portion reaching the surface of the uppermost layer of the semiconductor laminate. The semiconductor light emitting device according to claim 1, wherein the concavo-convex forming layer and the uppermost layer of the semiconductor stacked body are formed of a semiconductor material having an etching rate different from that of a predetermined etching agent. The semiconductor light emitting device according to claim 2, wherein the unevenness forming layer has a higher etching rate than the uppermost layer of the semiconductor stacked body with respect to the predetermined etching agent. The semiconductor light-emitting device according to claim 1, wherein the concavo-convex forming layer is formed of a multilayer laminate. The semiconductor light-emitting device according to claim 4, wherein the multilayer stacked body constituting the concavo-convex forming layer is formed by stacking layers whose composition changes stepwise. The semiconductor light-emitting device according to claim 4, wherein the multilayer stacked body constituting the unevenness forming layer is configured by stacking layers having different film thicknesses. The semiconductor light-emitting device according to claim 1, wherein the concavo-convex forming layer includes a layer whose composition continuously changes in a film thickness direction. Forming a semiconductor laminate including a first cladding layer, an active layer, and a second cladding layer on a substrate;
Forming a concavo-convex forming layer on the semiconductor laminate;
Forming a recess reaching the surface of the uppermost layer of the semiconductor laminate in the unevenness forming layer, and forming unevenness on the light extraction surface of the unevenness forming layer. In the step of forming the semiconductor stacked body and the step of forming the unevenness forming layer, the unevenness forming layer and the uppermost layer of the semiconductor stacked body are formed from a semiconductor material having an etching rate different from that of a predetermined etching agent. A method for manufacturing a semiconductor light emitting device according to claim 8. In the step of forming the semiconductor stacked body and the step of forming the unevenness forming layer, the unevenness forming layer is formed from a semiconductor material having an etching rate higher than the uppermost layer of the semiconductor stacked body with respect to the predetermined etching agent. The manufacturing method of the semiconductor light-emitting device of Claim 9. The method for manufacturing a semiconductor light emitting device according to claim 8, wherein in the step of forming the unevenness forming layer, the unevenness forming layer is formed from a multilayer stack. The method for manufacturing a semiconductor light-emitting device according to claim 11, wherein in the step of forming the unevenness forming layer, a layer having a composition that changes stepwise is formed as the multilayer laminate constituting the unevenness forming layer. . The method of manufacturing a semiconductor light emitting device according to claim 11, wherein in the step of forming the unevenness forming layer, layers having different film thicknesses are formed as the multi-layer laminate constituting the unevenness forming layer. The method for manufacturing a semiconductor light emitting device according to claim 8, wherein in the step of forming the concavo-convex forming layer, a layer whose composition continuously changes in the film thickness direction is formed as the concavo-convex forming layer.

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