JP2008091970A - Piezoelectric oscillator and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric oscillator that can improve productivity, give a sufficient area to user, write, and measurement terminals sufficiently, and prevent the write and measurement terminals from remaining in the piezoelectric oscillator as a product, and to provide a method of manufacturing the piezoelectric oscillator. <P>SOLUTION: There are no cavities on a flat chip substrate 2, and a piezoelectric vibration element 5 packaged onto the chip substrate 2 is sealed by a cap 6. The write and measurement terminals 10, 11 required in a manufacture process are formed in a street region 9 provided in a portion to the chip region 8, and are eliminated and wasted when the chip region 8 is separated, thus preventing unnecessary terminals, such as the write terminal 10 and the measurement terminal, from remaining in the piezoelectric oscillator 1 as a product. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a piezoelectric oscillator using a piezoelectric vibration element such as a crystal.

There are many electronic devices that use piezoelectric oscillators to generate clock pulses, but there is a strong demand for downsizing and cost reduction. Accordingly, a manufacturing method is provided in which various problems associated with downsizing can be solved to reduce the size of the piezoelectric oscillator and to produce the piezoelectric oscillator at low cost.
For example, in the method of manufacturing a piezoelectric oscillator disclosed in Patent Document 1, a plurality of substrate regions (chip regions) are set on a base material formed by laminating ceramic sheets, and an IC circuit is formed in a recess of each substrate region formed in advance. The piezoelectric vibration element is mounted on the substrate area above it, the seal ring is attached so as to surround the recess and the piezoelectric vibration element, the main body is then attached to the top of the seal ring, and finally the mother board is attached This is a process of dividing along the outer periphery of the substrate region.

At this time, a spare area is formed between adjacent board areas of the mother board, a write control terminal is arranged in the spare area, and temperature compensation data is stored in the IC circuit using this, and then the mother board is used. Is also disclosed along the outer periphery of each substrate region.
This manufacturing method completes the necessary structure for each substrate region in the state of the base material, and then divides each region as a substrate, so that the base material itself is used as a carrier for conveyance and positioning required during the manufacturing process. It functions and can be produced more efficiently than the individual handling of the board, reducing costs, and forming the write terminals in a reduced manner can reduce the board area, while providing a sufficient area for the write terminals. Therefore, it is described that there is an advantage that the writing operation is simple.

In the manufacturing method of Patent Document 2, a plurality of formation regions (chip regions) are set on a wafer (base material), and a circuit pattern (IC circuit) of an integrated circuit element is formed on each formation region on one side of the wafer. At the same time, a cavity is formed on the other surface side of each forming region, a piezoelectric vibration element is mounted thereon, a lid is attached to the cavity, and the inside of the cavity is sealed, and finally, each forming region is divided into pieces. It is a process of separating.
In this manufacturing method, it is not necessary to handle a small piece of a formation region in the manufacturing process, and a plurality of piezoelectric oscillators can be produced at the same time. A cavity is formed in a wafer and a piezoelectric vibration element is loaded. It is described that there is an advantage that it can be manufactured in a small size.

JP 2005-79658 A JP 2004-214787 A

  The conventional manufacturing methods are excellent in production efficiency and can reduce the size of the piezoelectric oscillator. In either case, a cavity is formed in the chip region of the mother substrate (ceramic laminated sheet or wafer), and the piezoelectric vibration element is formed there. Is loaded. Therefore, a process of forming a cavity in the base substrate is required before forming an IC circuit in the chip region, and the operation of mounting the piezoelectric vibration element in the small cavity is difficult. Further, in the manufacturing process of the piezoelectric oscillator, it is necessary to store temperature compensation data of the mounted piezoelectric vibration element in the IC circuit. For this purpose, a write terminal and a user terminal (when the user mounts the piezoelectric oscillator on the user board) It is not clear in what process it will be formed. Further, in the case of a fired substrate such as ceramic, since the positional accuracy of the wiring pattern is poor, probe contact mistakes are likely to occur when temperature compensation data is written to the IC circuit.

  The present invention eliminates the labor of forming the cavity and eliminates the difficult task of loading a piezoelectric resonator or the like into the minute cavity by forming the wafer with both sides flat without forming a cavity in the wafer. Even if the chip area is further reduced, the area of the user terminals that need to be arranged in this area is sufficiently large, and short-circuiting with the pads on the IC circuit when mounted on the user board An object of the present invention is to provide a piezoelectric oscillator that is less likely to cause an accident and a method for manufacturing the same.

  In a piezoelectric oscillator, an IC circuit is formed on a flat wafer, and a piezoelectric vibration element is mounted. The piezoelectric vibration element is sealed with a cap. User terminals are formed by rewiring technology.

Since the wafer surface is used flat and the piezoelectric vibration element is sealed with a cap, the manufacturing process of the piezoelectric oscillator is simplified.
Unlike the case where the piezoelectric vibration element is mounted in the cavity, there is no side wall forming the cavity, so that an accident in which the paste application nozzle contacts an unnecessary portion during mounting does not occur.
The user terminals formed by the rewiring technology can be formed on the chip area so as to overlap the upper layer of the IC circuit or on a different surface (the other surface side) from the surface on which the IC circuit is formed (the one surface side). Therefore, a sufficient area can be provided separately from the IC circuit pads. Thereby, the attachment to a user board | substrate can be performed simply and reliably. If the write terminal and the measurement terminal are formed in the street area outside the chip area, the size and arrangement of the pads in the IC circuit are not limited, and the degree of freedom in designing for miniaturization and thinning increases.
Since the piezoelectric oscillator as a product is a package of an IC provided with a substrate, the degree of miniaturization and thinning is high.
The writing terminal and the measuring terminal can be formed at the same time as the IC circuit, if necessary, so that the positional accuracy is good and it is easy to perform operations such as storing temperature compensation data in the IC circuit.
Write terminals and measurement terminals are removed when the chip substrate is separated, so there is no shortage due to remaining unnecessary terminals when the user mounts the piezoelectric oscillator on the user board instead of remaining as a product piezoelectric oscillator. Accidents can be prevented.

[Piezoelectric oscillator, Example 1]
FIG. 1 schematically shows the structure of a piezoelectric oscillator 1 as an embodiment. FIG. 2 is a plan view showing a chip area, a street area, and terminal positions on a wafer. FIG. It is the top view which showed the positional relationship of a terminal and a pad. The piezoelectric oscillator 1 includes an IC circuit 3, a user terminal 4, and a piezoelectric vibration element 5 on a chip substrate 2. The piezoelectric vibration element 5 is covered with a metal or glass cap 6 and sealed from the outside.
The chip substrate 2 is obtained by cutting out a plurality of chip regions 8 set on a silicon wafer 7 as a base material. The plurality of chip regions 8 are arranged by providing street regions 9 between adjacent chip regions on the wafer 7. The street region 9 is a portion that is discarded when the chip region 8 is separated by dicing or the like.

  In each chip region 8 set on the wafer 7, the IC circuit 3 is formed, the user terminal 4 is formed, the piezoelectric vibration element 5 is mounted, and the cap 6 is fixed through a plurality of steps. In the street area 9, a write terminal 10 and a measurement terminal 11 are formed and connected to the corresponding pad 12 of the IC circuit 3. The write terminal 10 is used for an operation of storing temperature compensation data for correcting a change in frequency associated with a temperature change of the mounted piezoelectric vibration element 5 in the memory of the IC circuit 3. The measurement terminal 11 is used to verify the performance of the mounted piezoelectric vibration element 5. Neither is necessary when using the piezoelectric oscillator 1 completed as a product.

  In this embodiment, the piezoelectric vibration element 5 is mounted on the other surface side opposite to the one surface side of the wafer 7 on which the IC circuit 3 is formed, so that the corresponding pad 12 of the IC circuit 3 on the one surface side is the piezoelectric vibration element. The through electrode 13 is connected. A mount portion 14 is formed on the other surface side of the piezoelectric vibration element through electrode 13, and the piezoelectric vibration element 5 is mechanically and electrically fixed thereto using a conductive adhesive, a bump, or the like.

  In this embodiment, the user terminal 4 is formed at the same time as the write terminal 10 and the measurement terminal 11, an insulating layer is formed on the IC circuit 3, and pads corresponding to the user terminal 4, the write terminal 10 and the measurement terminal 11 are formed. 12 and all other pad portions necessary for wiring are exposed, and a rewiring layer including wiring to the pads corresponding to the user terminal 4, the write terminal 10, and the measurement terminal 11 is formed by a rewiring technique. . At this time, the user terminal 4 is formed in the chip area, but the write terminal 10 and the measurement terminal 11 are formed in the street area 9. Since the write terminal 10 and the measurement terminal 11 are formed in the street region 9, the area can be increased regardless of the size of the chip region 8, so that the data input probe can be contacted easily and reliably. I can do it. On the other hand, the formation space of the pad 12 in the IC circuit 3 is not compressed, and a margin can be given to the design of the IC circuit 3.

  As the cap 6, a sheet material provided with a plurality of sealing recesses (caps) corresponding to the chip regions 8 is used. The sheet material is applied to the wafer 7, each piezoelectric vibration element 5 is sealed with a concave portion, and is fixed to the wafer 7 with a resin adhesive, low melting point glass, or the like on the chip region 8 side.

When the structure as the piezoelectric oscillator 1 is prepared in each of the chip regions 8 on the wafer 7, the street region 9 portion is cut out by dicing, and the chip regions 8 including the cap 6 are individually separated. At this time, the write terminal 10 and the measurement terminal 11 unnecessary for the piezoelectric oscillator 1 are removed.
In the first embodiment, the chip substrate 2 from which the chip region 8 is separated may be flat on both sides, and it is not necessary to form a cavity or the like for housing the piezoelectric vibration element 5. Since the IC circuit 3 can be formed in a range commensurate with the bottom area of the cap 6 to reduce the cost, the piezoelectric oscillator 1 can be further reduced in size, and the user terminal 4 having a large area is provided. This is advantageous in reducing the thickness of the piezoelectric oscillator 1 because it is not necessary to assemble the write terminal board.

  FIG. 4 is a cross-sectional view schematically showing a piezoelectric oscillator, which is an example implemented in a process different from the process described in the first embodiment. The write terminal 10 and the measurement terminal 11 formed in the street area 9 are created at the same time when the IC circuit 3 is formed in the chip area 8, and only the user terminal 4 is used after the IC circuit 3 is formed. It may be formed by the rewiring technology that was used. In this case, in order to reduce the size of the piezoelectric oscillator 1 which is a product, the user terminal 4 is preferably formed on the surface opposite to the piezoelectric vibration element 5.

[Piezoelectric oscillator, Example 2]
FIG. 5 is a sectional view schematically showing the structure of the piezoelectric oscillator. FIG. 5A relates to the second embodiment, and FIG. 5B relates to the third embodiment. In the first embodiment, the piezoelectric vibration element 5 may be mounted on the same surface side as the IC circuit 3, and both the IC circuit 3 and the piezoelectric vibration element 5 may be sealed with a cap 6 (FIG. 5A). The piezoelectric vibration element 5 is mounted by providing the mount portion 14 directly on the pad 12 used for connection with the piezoelectric vibration element of the IC circuit 3. Similarly to the above, the user terminal 4 is preferably formed on the surface opposite to the piezoelectric vibration element 5.
[Piezoelectric oscillator, Example 3]
In the third embodiment, the user terminal 4 may be formed on the same side as the IC circuit 3 (FIG. 5B). In this case, the chip region 9 is slightly larger than the bottom surface of the cap 6 by the provision of the user terminal 4, but since all operations can be performed from one surface side of the chip substrate, the processing procedure is simplified. Further, there is no need for a through electrode that passes through to the other side.

[Production Method 1]
FIG. 6 is a process diagram schematically showing the production method 1 of the present invention. The piezoelectric oscillator 1 according to the embodiment is produced by the following process.
[1] A flat wafer 7 is prepared, and a street region 9 is set between a plurality of chip regions 8 and the chip regions 8 on one surface side. If the widths of the chip region 8 and the street region 9 are the same, unnecessary space on the wafer 7 (portion excluding the chip region 8 serving as the piezoelectric oscillator 1) increases, but subsequent dicing can be performed at equal intervals.
[2] The IC circuit 3 and the electrode pads 12 of the IC circuit 3 are formed in each chip region 8 on the one surface side of the wafer 7 (FIG. 6A).

[3] An insulating layer 15 is formed of a passivation film or a resist film on the one surface side of the wafer 7 except for the pad portion of the IC circuit 3, and a rewiring layer is formed on the surface thereof. In rewiring, a write terminal 10, a measurement terminal 11, and a user terminal 4 are formed, and these are connected to corresponding pads 12 of the IC circuit 3. In addition, other corresponding pads 12 are connected to the position where rewiring is set. In this case, the user terminal 4 is arranged in the chip area 8, and the writing terminal 10 and the measuring terminal 11 are arranged in the street area 9 (FIG. 6B).
[4] The other surface side of the wafer 7 is ground and thinned, and the through electrode 13 is formed at a necessary portion. The piezoelectric vibration element penetrating electrode 13 is one of them, and is formed from the other surface side of the wafer 7 to the piezoelectric vibration element pad 12 in the IC circuit 3 on the one surface side. Also, a mount portion 14 for mounting the piezoelectric vibration element 5 is formed on the other surface side end of the piezoelectric vibration element through electrode 13 (FIG. 6C).

[5] In each of the chip regions 8, the piezoelectric vibration element 5 is mounted on the mount portion 14 provided on the other surface side of the piezoelectric vibration element through electrode 13 (FIG. 6D). Solder balls and conductive adhesive are used for mounting. Next, the frequency is adjusted by etching an electrode film (not shown) or the like on the piezoelectric vibration element 5 with a laser or an ion beam, or by adding a film on the electrode film.
[6] Cover the sheet material 16 with the sealing recesses to be the cap 6 on the other surface side of the wafer 7, make the sealing recesses correspond to each of the piezoelectric vibration elements 5 in the chip region 8, and Fix to wafer 7. Fixing is often performed by heat bonding using low-melting glass or solder (including Au—Sn). As a heat source in this case, a heater, a laser, high frequency induction, an electron beam, or the like can be used. The periphery of the sealing recess that seals the piezoelectric vibration element 5 is securely fixed (FIG. 6E). The frequency adjustment may be performed after this step. However, at least the sealing recess to be the cap 6 of the sheet material 16 needs to be made of a material transparent to the laser such as glass.

[7] Using the measurement terminal 11 and the write terminal 10 arranged in the street area 9, the measurement terminal 11 is used to determine (test) the characteristics of the piezoelectric vibration element 5 in each chip area 8, The temperature characteristic correction data is stored in the memory of the IC circuit 3 by using it.
[8] Each chip region 8 is separated from the wafer 7 by dicing to form the piezoelectric oscillator 1 here. The write terminal 10 and the measurement terminal 11 formed in the street area 9 are both discarded when the street area 9 is discarded by dicing.

  In this manufacturing method, since the piezoelectric vibration element 5 is mounted on the flat surface of the wafer 7, there is no need to form a cavity in the wafer 7, and there is no obstruction by the side wall of the cavity during mounting. The writing terminal 10 and the measuring terminal 11, which are easy to attach the element 5, have a sufficient area because they are formed in the street region 9, and measurement and writing operations using the probe 17 are not required to have high accuracy. The degree of freedom in designing the piezoelectric oscillator 1 to be reduced in size and thickness can be increased. On the other hand, the effective use area of the chip region 8 is increased, and the design of the IC circuit 3 such as the arrangement of the pads 12 is facilitated. Since the piezoelectric oscillator 1 as a product does not leave unnecessary write terminals 10 and measurement terminals 11 in the product, an unexpected short circuit accident occurs when the user mounts them on the user board. It has advantages, such as it is possible to prevent the.

[Production Method 2]
FIG. 7 is a process diagram schematically showing the production method 2 of the present invention. Compared with the manufacturing method 1, the steps [2] and [3] are different. That is, when the IC circuit 3 is formed in each of the chip regions 8 (FIG. 7B), at the same time, the write terminal 10 and the wiring connecting the IC circuit 3 are formed. Accordingly, in the step [3], only the user terminal 4 is formed on the surface of the insulating layer 15. The write terminal 10 is arranged in the street area 9 and the user terminal 4 is arranged in the chip area 8. Other than that, there is no particular difference from Manufacturing Method 1.

  In the manufacturing method 2, it is necessary to prevent the write terminals 10 and the measurement terminals 11 already formed in the street region 9 from being covered with the insulating layer 15 at the time of rewiring, but the number of pads 12 formed in the IC circuit 3 is small. Therefore, the effective area other than that occupied by the plurality of pads 12 in the IC circuit 3 is increased, and a margin for designing the IC circuit 3 is increased.

[Production Method 3]
FIG. 8 is a process diagram schematically showing the production method 3 of the present invention.
[1] A wafer 7 is prepared, and a plurality of chip areas 8 and street areas 9 are set on one side.
An IC circuit 3 and a write terminal 10 and a measurement terminal 11 are formed in the street area 9 in each chip area 8 on one surface side of the wafer 7. Next, the insulating layer 15 is formed of a passivation film (PV film) or the like on the upper surface except for the pad 12 used for connection to the piezoelectric vibration element 5, the write terminal 10, and the measurement terminal 11. Here, only the pad 12 used for connection with the piezoelectric vibration element 5 is provided with an opening in the insulating layer 15 formed on the IC circuit 3 (FIG. 8A).
[2] The other surface side of the wafer 7 is ground and thinned, and the through electrodes 13 (plurality) are formed at necessary portions such as for a writing terminal and a measuring terminal. A mount portion 14 is formed on the pad 12 used for connection with the piezoelectric vibration element 5 by using plating or the like (FIG. 8B). Here, there is no problem as long as the mount portion 14 is electrically and mechanically joined to the piezoelectric vibration element 5 without plating the pad 12 used for connection with the piezoelectric vibration element 5.

[3] The piezoelectric vibration element 5 is mounted on one surface side of the wafer 7 using the mount portion 14 of the pad 12 used for connection to the piezoelectric vibration element 5 (FIG. 8C). Next, frequency adjustment is performed.
[4] A sheet material 16 having a sealing recess is placed on one surface side of the wafer 7, and each piezoelectric vibration element 5 is sealed with the sealing recess to be the cap 6 (FIG. 8D).
[5] Rewiring is performed on the other side of the wafer 7, and the user terminals 4 are formed on the surface. The user terminal 4 is arranged in the chip area 8. The formed rewiring is connected to the corresponding pad 12 of the IC circuit 3 on one side through the through electrode 13 (e in FIG. 8).

[6] Using the measurement terminal 11 and the write terminal 10 arranged in the street region 9, the characteristics of the piezoelectric vibration element 5 in each chip region 8 are measured (verified) through the measurement terminal 11, or the write terminal 10 is The temperature characteristic correction data is stored in the memory of the IC circuit 3 by using it.
[7] Each chip region 8 is separated from the wafer 7 by dicing to form individual piezoelectric oscillators 1. The write terminal 10 and the measurement terminal 11 formed in the street area 9 are both discarded when the street area 9 is discarded by dicing.

  In the manufacturing method 3, since it is possible to work from all sides except when the user terminal 4 is finally formed, the reversing operation of the wafer 7 is small and efficient manufacturing can be performed. In addition, since the insulating layer is formed on the other surface side of the wafer 7 after the sheet material 16 is fixed to the wafer 7 which has been thinned in the step [2], the user terminal 4 is formed. Further, the wafer 7 is hardly deformed, and the product yield is good.

[Production Method 4]
FIG. 9 is a process diagram schematically showing the production method 4 of the present invention. Compared with the production method 3, the steps [3], [4] and [5] are different. In the manufacturing method 4, in step [3], rewiring is performed on the other surface side of the wafer 7, and the user terminals 4 are formed on the surface. The user terminal 4 is arranged in the chip area 8. The formed rewiring is connected to the corresponding pad 12 of the IC circuit 3 on one side through the through electrode 13 (FIG. 9C). Next, in step [4], the piezoelectric vibration element 5 is mounted on one surface side of the wafer 7 by using the mount portion 14 of the pad 12 used for connection to the piezoelectric vibration element 5 (FIG. 9D). Next, frequency adjustment is performed. Then, in step [5], the sheet material 16 provided with the sealing recess is placed on one surface side of the wafer 7, and each piezoelectric vibration element 5 is sealed with the sealing recess serving as the cap 6 (FIG. 9E). Others are the same as in the case of manufacturing method 3.

  The above is an embodiment, and various modifications are possible. For example, in addition to the heating method, anodic bonding, surface activated bonding, or the like can be used for fixing the cap 6. In any of the manufacturing methods, after the piezoelectric vibration element 5 is mounted, an annealing process, which is thermal stabilization, is performed, and product characteristics are inspected at the end of the process.

Cross-sectional view schematically showing a piezoelectric oscillator (Example 1) Plan view showing chip area, street area and terminal layout on wafer A plan view showing the arrangement relationship between the chip area and terminals and pads Cross-sectional view schematically showing a piezoelectric oscillator (with the process sequence changed) Cross-sectional view schematically showing a piezoelectric oscillator (Example 2 and Example 3) Process diagram showing manufacturing method 1 in outline Process diagram showing manufacturing method 2 in outline Process diagram schematically showing production method 3 Process diagram schematically showing production method 4

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Piezoelectric oscillator 2 Chip substrate 3 IC circuit 4 User terminal 5 Piezoelectric vibration element 6 Cap 7 Wafer 8 Chip area 9 Street area 10 Write terminal 11 Measurement terminal 12 Pad 13 Through-hole electrode 14 Mount part 15 Insulating layer 16 Concave part for sealing Sheet material 17 probe

Claims (12)

In a piezoelectric oscillator,
A piezoelectric oscillator comprising an IC circuit formed on one side of a chip substrate on a flat plate, a piezoelectric vibration element mounted on the other side, and the IC circuit and the piezoelectric vibration element sealed with a cap. In a piezoelectric oscillator,
An IC circuit is formed on one side of a chip substrate on a flat plate, a piezoelectric vibration element is mounted on the same surface as the surface on which the IC circuit is formed, and the IC circuit and the piezoelectric vibration element are sealed with a cap. A piezoelectric oscillator characterized by having   A measurement terminal and a user terminal for measuring the characteristics of the piezoelectric vibration element are formed on the other side of the chip substrate opposite to the surface on which the IC circuit is formed, and the measurement terminal and the user terminal are The piezoelectric oscillator according to claim 2, wherein each of the piezoelectric oscillators is connected to the IC circuit. In the manufacturing method of the piezoelectric oscillator,
A step of setting a plurality of chip regions on one side of a flat wafer and a street region between the plurality of chip regions;
Forming an IC circuit in each chip region on one side of the wafer;
A rewiring layer connected to the IC circuit is formed on the wafer surface on which the IC circuit is formed, and a user terminal connected to the IC circuit by the rewiring layer is formed in the chip region by the rewiring layer. Forming a write terminal connected to the IC circuit in each of the street regions;
A through electrode connected to the IC circuit and connecting one surface side and the other surface side of the wafer is formed in the chip region, and at the end of the through electrode on the other surface side of the wafer where the IC circuit is not formed. Forming the mount part; and
Mounting a piezoelectric vibration element on the mount portion of the chip region;
A step of sealing each of the piezoelectric vibration elements by fixing a sheet material including a plurality of caps corresponding to each of the chip regions to the other surface side of the wafer;
Storing temperature correction data in the IC circuit using the write terminal;
A step of separating each of the plurality of chip regions formed on the wafer;
A method for manufacturing a piezoelectric oscillator, comprising: In the manufacturing method of the piezoelectric oscillator,
A step of setting a plurality of chip regions on one side of a flat wafer and a street region between the plurality of chip regions;
Forming an IC circuit in each chip region on one surface side of the wafer, and forming a write terminal connected to the IC circuit in the street region;
Forming a rewiring layer connected to the IC circuit in the chip region of the wafer surface where the IC circuit is formed, and forming a user terminal connected to the IC circuit by the rewiring layer;
A through electrode connected to the IC circuit and connecting one surface side and the other surface side of the wafer is formed in the chip region, and at the end of the through electrode on the other surface side of the wafer where the IC circuit is not formed. Forming the mount part; and
Mounting a piezoelectric vibrating piece on the mount portion of the chip region;
A step of sealing each of the piezoelectric vibration elements by fixing a sheet material including a plurality of caps corresponding to each of the chip regions to the other surface side of the wafer;
Storing temperature correction data in the IC circuit using the write terminal;
A step of separating each of the plurality of chip regions formed on the wafer;
A method for manufacturing a piezoelectric oscillator, comprising: In the manufacturing method of the piezoelectric oscillator,
A step of setting a plurality of chip regions on one side of a flat wafer and a street region between the plurality of chip regions;
Forming an IC circuit in each chip region on one side of the wafer;
A rewiring layer connected to the IC circuit is formed on the wafer surface on which the IC circuit is formed, and a mount portion connected to the IC circuit by the rewiring layer is formed in the chip region by the rewiring layer. Forming a write terminal connected to the IC circuit in each of the street regions;
A through electrode connected to the IC circuit and connecting one surface side and the other surface side of the wafer is formed in the chip region, and at the end of the through electrode on the other surface side of the wafer where the IC circuit is not formed. Forming a user electrode;
Mounting a piezoelectric vibration element on the mount portion of the chip region;
A step of fixing a sheet material in which a plurality of caps corresponding to each of the chip regions are linked to one side of the wafer and sealing each of the piezoelectric vibration elements;
Storing temperature correction data in the IC circuit using the write terminal;
A step of separating each of the plurality of chip regions formed on the wafer;
A method for manufacturing a piezoelectric oscillator, comprising: In the manufacturing method of the piezoelectric oscillator,
A step of setting a plurality of chip regions on one side of a flat wafer and a street region between the plurality of chip regions;
Forming an IC circuit in each of the chip regions on one side of the wafer and forming a write terminal connected to the IC circuit in the street region;
Forming a rewiring layer connected to the IC circuit on the wafer surface on which the IC circuit is formed, and forming a mount portion connected to the IC circuit by the rewiring layer in the chip region;
A through electrode connected to the IC circuit and connecting one surface side and the other surface side of the wafer is formed in the chip region, and at the end of the through electrode on the other surface side of the wafer where the IC circuit is not formed. Forming a user electrode;
Mounting a piezoelectric vibrating piece on the mount portion of the chip region;
A step of fixing a sheet material in which a plurality of caps corresponding to each of the chip regions are linked to one side of the wafer and sealing each of the piezoelectric vibration elements;
Storing temperature correction data in the IC circuit using the write terminal;
A step of separating each of the plurality of chip regions formed on the wafer;
A method for manufacturing a piezoelectric oscillator, comprising:   The method for manufacturing a piezoelectric oscillator according to claim 4, wherein a step of forming a user terminal is performed after the step of sealing the piezoelectric vibration element with the sheet material.   The method includes a step of adjusting the frequency of the piezoelectric vibration element after the step of mounting the piezoelectric vibration element on the mount portion and before the step of sealing the piezoelectric vibration element with the sheet material. The manufacturing method of the piezoelectric oscillator as described in any one of Claims 4-7.   The method for manufacturing a piezoelectric oscillator according to claim 4, wherein the frequency adjustment is performed after the step of sealing the piezoelectric vibration element with the sheet material.   The measurement terminal for inspecting the characteristics of the piezoelectric vibration element connected to the IC circuit is formed in the street region in the step of forming the write terminal. A method for manufacturing a piezoelectric oscillator according to claim 1.   The method for manufacturing a piezoelectric oscillator according to claim 4, further comprising a step of grinding a surface of the wafer on which the IC circuit is not formed before the step of forming the through electrode. .

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