JP2007519233A - Beam emitting type and / or beam receiving type semiconductor component - Google Patents
Beam emitting type and / or beam receiving type semiconductor component Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000010137 moulding (plastic) Methods 0.000 claims abstract description 18
- 239000004033 plastic Substances 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000000465 moulding Methods 0.000 claims description 38
- 239000004020 conductor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000011888 foil Substances 0.000 claims description 10
- 230000005670 electromagnetic radiation Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000001746 injection moulding Methods 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 18
- 239000012778 molding material Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- FNCIDSNKNZQJTJ-UHFFFAOYSA-N alumane;terbium Chemical compound [AlH3].[Tb] FNCIDSNKNZQJTJ-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002991 molded plastic Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2924/1204—Optical Diode
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Abstract
本発明は、ビーム発光性及び／又はビーム受光性の半導体チップと、プラスチック成形部と、外部電気端子を有しているビーム発光型及び／又はビーム受光型半導体構成素子に関している。前記プラスチック成形部は、半導体構成素子によって発光及び／又は受光される電磁ビームに対して透過性であり、さらに当該プラスチック成形部と共に半導体チップが少なくとも部分的に変形されており、前記外部電気端子は、半導体チップの電気的コンタクト面と電気的に接続されている。前記プラスチック成形部は、硬化反応性のシリコン成形材料からなっている。さらに本発明はそのような半導体構成素子の製造方法にも関している。 The present invention relates to a beam-emitting and / or beam-receiving semiconductor component having a beam-emitting and / or beam-receiving semiconductor chip, a plastic molded portion, and an external electrical terminal. The plastic molded part is transparent to an electromagnetic beam emitted and / or received by a semiconductor component, and the semiconductor chip is at least partially deformed together with the plastic molded part, and the external electrical terminal is The semiconductor chip is electrically connected to the electrical contact surface of the semiconductor chip. The plastic molding part is made of a curing reactive silicon molding material. The invention further relates to a method for manufacturing such a semiconductor component.
Description
本発明は、ビーム発光型及び／又はビーム受光型半導体構成素子であって、ビーム発光性及び／又はビーム受光性の半導体チップと、プラスチック成形部と、外部電気端子とを有し、前記プラスチック成形部は、半導体構成素子によって発光及び／又は受光される電磁放射に対して透過性でかつ当該プラスチック成形部を用いて半導体チップが少なくとも部分的に変形されており、前記外部電気端子は、半導体チップの電気的なコンタクト面と電気的に接続されている半導体構成素子に関している。さらに本発明は、そのような半導体構成素子の製造方法にも関している。 The present invention is a beam emitting and / or beam receiving semiconductor component, comprising a beam emitting and / or beam receiving semiconductor chip, a plastic molding portion, and an external electrical terminal, and the plastic molding The part is transparent to electromagnetic radiation emitted and / or received by a semiconductor component and the semiconductor chip is at least partially deformed using the plastic molding part, and the external electrical terminal is a semiconductor chip The present invention relates to a semiconductor component that is electrically connected to the electrical contact surface. The invention further relates to a method for manufacturing such a semiconductor component.
この種の半導体構成素子は国際公開第０１/５０５４０号パンフレットから公知である。そこに開示されている構成素子では、半導体チップがリードフレーム上に取付けられている。この半導体チップとリードフレームの部分領域はプレス成形されたプラスチック成形体によって覆われている。リードフレームの外部電気端子はこのプラスチック成形体から突出している。このプラスチック成形体は例えばエポキシ樹脂からなり、無機若しくは有機の変換物質並びに充填物質を含んでいる。 This type of semiconductor component is known from WO 01/50540. In the component disclosed therein, a semiconductor chip is mounted on a lead frame. The partial regions of the semiconductor chip and the lead frame are covered with a press-molded plastic molded body. External electric terminals of the lead frame protrude from the plastic molded body. This plastic molded body is made of, for example, an epoxy resin and contains an inorganic or organic conversion substance and a filling substance.
オプトエレクトロニクス構成素子の別の方式は、例えば国際公開第９９/０７０２３号パンフレットから公知である。ここでは、半導体チップが載置されているリードフレームがケーシング基体と共に変形され、さらに反射器型の切欠きを有している。この切欠き内には半導体チップが配設されている。この切欠きは、半導体チップの取付け後にビーム透過性の大抵は透明の鋳造質量体によって、半導体チップと場合によってはチップからリードフレームまでのボンディングワイヤがこれによって取り囲まれるまで充填される。そのような構造形態の公知の鋳造質量体は、例えば透過性のエポキシ樹脂である。類似の構造形態は例えば国際公開第９８/１２７５７号パンフレットから公知である。 Another method of optoelectronic components is known, for example, from WO 99/07023. Here, the lead frame on which the semiconductor chip is mounted is deformed together with the casing base, and further has a reflector-type notch. A semiconductor chip is disposed in the notch. This notch is filled after the semiconductor chip is mounted by a beam-transparent, mostly transparent casting mass, until the semiconductor chip and possibly the bonding wire from the chip to the lead frame are surrounded by it. A known casting mass of such a structural form is, for example, a permeable epoxy resin. Similar structural forms are known, for example, from WO 98/12757.
米国特許出願公開第６，２７４，９２４号明細書には表面実装可能なＬＥＤケーシング構造形態が開示されており、ここでは半導体チップが内部に埋め込まれリードフレームの外部電気端子と電気的に接続されている剛性のプラスチック体が、軟性のビーム透過性の包含材料、例えばシリコンによって充填されている。このプラスチック体の上にはレンズキャップが載置されている。このレンズキャップは、包含材料に一方では所定の形態を付与し、他方ではケーシング基体からの流出を阻止している。このＬＥＤケーシング構造形態は比較的多数のケーシング構成要素が必要になることに基づいて比較的多くの製造コストがかかる。 US Pat. No. 6,274,924 discloses a surface mountable LED casing structure, in which a semiconductor chip is embedded and electrically connected to an external electrical terminal of a lead frame. The rigid plastic body is filled with a soft beam transmissive inclusion material, such as silicon. A lens cap is placed on the plastic body. The lens cap imparts a predetermined shape to the containing material on the one hand and prevents the outflow from the casing substrate on the other hand. This LED casing structure configuration is relatively expensive to manufacture due to the relatively large number of casing components required.
発明が解決しようとする課題
本発明の課題は、冒頭に述べたような形式の半導体構成素子において、一方では技術的に容易に製造が可能であり、他方では特に青色光若しくは紫外線ビームを放出する半導体チップの適用のもとで十分な劣化安定性が得られるように改善を行うことである。
Problem to be Solved by the Invention The problem of the present invention is that a semiconductor component of the type described at the outset can be technically easily manufactured on the one hand, and on the other hand emits in particular a blue or ultraviolet beam. The improvement is to obtain sufficient deterioration stability under application of the semiconductor chip.
課題を解決するための手段
前記課題は、請求項１の特徴部分に記載された本発明による半導体素子と、請求項９の特徴部分に記載された本発明による方法によって解決される。この半導体構成素子の別の有利な構成例は請求項２〜８に記載されている。
The object is solved by a semiconductor device according to the invention as described in the characterizing part of claim 1 and a method according to the invention as described in the characterizing part of claim 9. Further advantageous configurations of this semiconductor component are described in claims 2-8.
本発明によるビーム発光型及び／又はビーム受光型半導体構成素子は、以下の構成要素を含んでいる。すなわち、
−ビーム発光性及び／又はビーム受光性の半導体チップ
−特に射出成形若しくはプレス成形されたプラスチック成形部、このプラスチック成形部は半導体構成素子によって発光及び／又は受光される電磁ビームに対して透過性であり、該プラスチック成形体を用いて半導体チップが少なくとも部分的に変形され、さらに前記プラスチック成形部は硬化反応性のシリコン成形質量体からなっている、
−外部電気端子、この外部電気端子は半導体チップの電気的なコンタクト面と電気的に接続されている。
The beam-emitting and / or beam-receiving semiconductor component according to the present invention includes the following components. That is,
-Beam-emitting and / or beam-receiving semiconductor chip-In particular, an injection-molded or press-molded plastic molded part, which is transparent to the electromagnetic beam emitted and / or received by the semiconductor component. A semiconductor chip is at least partially deformed using the plastic molded body, and the plastic molded portion is made of a curing reactive silicon molded mass;
An external electrical terminal, which is electrically connected to the electrical contact surface of the semiconductor chip.
前記シリコン成形質量体とは、当該明細書では、専らシリコンからなる成形質量体だけでなく、成形プロセスを用いてプラスチック成形部まで処理可能な成形質量体であって、従来の成形質量体よりも劣化安定性が十分に向上しているシリコンからなる成形質量体も含む。 In the present specification, the silicon molding mass is not only a molding mass consisting exclusively of silicon, but also a molding mass that can be processed up to a plastic molding part using a molding process, and is more than a conventional molding mass. Also included is a molded mass made of silicon having sufficiently improved deterioration stability.
このシリコン成形質量体は有利には１０分以下の硬化時間を有している。このことは経済的に意味のある機械の稼動時間の実現のもとで半導体構成素子の製造を容易にしている。 This silicon molding mass preferably has a setting time of 10 minutes or less. This facilitates the manufacture of semiconductor components under the realization of economically meaningful machine operating times.
またこのシリコン成形質量体は有利には、硬化状態において数値６５のショアー硬度（Ｄ型）以上の硬さを有している。それにより有利には機械的影響に対するプラスチック成形部の形状安定性が向上する。 In addition, this silicon molding mass advantageously has a hardness equal to or greater than the Shore hardness (D type) of 65 in the cured state. This advantageously improves the shape stability of the plastic part against mechanical influences.
さらにこの成形質量体は、有利にはシリコンの他に少なくとも１つのさらなる材料、例えばエポキシ受信を含んだシリコン複合材料である。そのような複合材料は次のような利点を提供する。すなわちそのつどの適用ケースと使用されるプロセスに対する要求に適合化させることができる。シリコン−エポキシ樹脂複合材は通常は、シリコンのみの成形質量体よりも硬化が早くて機械的な強度も高い。この理由から大抵は容易に成形でき、プロセス時間もより短くできる。 Furthermore, the molding mass is preferably a silicon composite material containing at least one further material in addition to silicon, for example an epoxy receiver. Such a composite material provides the following advantages. That is, it can be adapted to the requirements for each application case and the process used. Silicone-epoxy resin composites usually cure faster and have higher mechanical strength than silicon-only molded masses. For this reason, it is usually easy to mold and the process time can be shorter.
混合光を放出する半導体構成素子の製造のために、シリコン成形質量体は、次のような変換材料を含む。すなわち半導体チップによって発光される及び／又は半導体構成素子によって受光される第１の波長領域の電磁放射の少なくとも一部を吸収し、第１の波長領域とは異なる第２の波長領域の電磁放射を放出する変換材料を含む。特に無機の蛍光粉末は簡単なやり方でシリコン材料に混合させることが可能である。それに関する例として例えばＣｅｒドーピングされたイットリウム・アルミニウム・ガーネットやＣｅｒドーピングされたテルビウム・アルミニウム・ガーネット粉末が挙げられる。その他の適した無機蛍光物質は、例えば国際公開第０１/５０５４０号パンフレットや国際公開第９８/１２７５７号パンフレットに記載があり、その限りではそれらの開示内容も参照され得る。 For the production of semiconductor components that emit mixed light, the silicon molding mass comprises a conversion material as follows. That is, it absorbs at least a portion of the electromagnetic radiation in the first wavelength region that is emitted by the semiconductor chip and / or received by the semiconductor component, and emits electromagnetic radiation in the second wavelength region that is different from the first wavelength region. Contains the release material to be released. In particular, the inorganic fluorescent powder can be mixed with the silicon material in a simple manner. Examples thereof include Cer-doped yttrium aluminum garnet and Cer-doped terbium aluminum garnet powder. Other suitable inorganic fluorescent materials are described in, for example, WO 01/50540 pamphlet and WO 98/12757 pamphlet.
有利には本発明によるプラスチック成形部は、青色スペクトル領域若しくは紫外スペクトル領域の電磁放射を放出する半導体チップを有する半導体構成素子において用いられる。 The plastic molding according to the invention is preferably used in a semiconductor component having a semiconductor chip that emits electromagnetic radiation in the blue or ultraviolet spectral range.
別の有利な実施例によれば、唯一の一体的なプラスチック成形部の半導体チップは硬化反応性のシリコン成形質量体から製造される。この種のプラスチック成形部の基本構成は、例えば先の国際公開第０１/５０５４０号パンフレットに記載されており、その限りではこの開示内容も参照され得る。 According to another advantageous embodiment, the only one-piece plastic-molded semiconductor chip is produced from a cure-reactive silicon molding mass. The basic structure of this type of plastic molded part is described in, for example, the above-mentioned International Publication No. 01/50540 pamphlet.
別の有利な実施例によれば、半導体チップが半導体チップの電気端子に対する電気的導体線路を備えた支持基板又は支持箔上に被着され、半導体チップが硬化反応性シリコン鋳造質量体からなるプラスチック成形部によって包み込まれる。 According to another advantageous embodiment, the plastic in which the semiconductor chip is deposited on a support substrate or support foil with electrical conductor lines to the electrical terminals of the semiconductor chip, the semiconductor chip comprising a cured reactive silicon casting mass Wrapped by the molding part.
本発明による半導体素子の有利な製造方法によれば、半導体チップが外部電気端子を備えた導体フレーム上に固定され、外部電気端子と電気的に接続される。それに続いて半導体チップは、導体フレームの部分領域も含めて射出成形法又はプレス成形法を用いてシリコン成形質量体でもって変形される。 According to an advantageous method of manufacturing a semiconductor device according to the present invention, a semiconductor chip is fixed on a conductor frame having external electrical terminals and is electrically connected to the external electrical terminals. Subsequently, the semiconductor chip is deformed with a silicon molding mass using injection molding or press molding including the partial region of the conductor frame.
別の有利な方法によれば、半導体チップが半導体チップの電気端子に対する電気的導体線路を備えた支持基板若しくは支持箔上に被着され、電気的導体線路と電気的に接続される。それに続いて半導体チップは支持基板ないしは支持箔上に射出成形法又はプレス成形法を用いてシリコン成形質量体によって包み込まれる。 According to another advantageous method, the semiconductor chip is deposited on a support substrate or a support foil with an electrical conductor line for the electrical terminals of the semiconductor chip and is electrically connected to the electrical conductor line. Subsequently, the semiconductor chip is encapsulated by a silicon molding mass on a support substrate or support foil using an injection molding method or a press molding method.
特に有利には本発明は、０.５ｍｍ×１.０ｍｍ以下の設置面積（底面積）を有している、及び／又は３５０μｍ以下、有利には２５０μｍ以下の全高を有している、ビーム発光型及び／又はビーム受光型半導体構成素子のもとで利用される。 Particularly advantageously, the invention provides a beam emission having an installation area (bottom area) of 0.5 mm × 1.0 mm or less and / or having a total height of 350 μm or less, preferably 250 μm or less. Used under mold and / or beam-receiving semiconductor components.
本発明のさらなる利点、さらなる構成及び有利な実施形態は、以下で図１から図３に基づいて説明する実施例から明らかにされる。これらの図面のうち、
図１は本発明の第１実施例の断面図であり、
図２は本発明の第２実施例の断面図であり、
図３は本発明の第３実施例の断面図である。
Further advantages, further configurations and advantageous embodiments of the present invention will become apparent from the examples described below on the basis of FIGS. 1 to 3. Of these drawings,
FIG. 1 is a sectional view of a first embodiment of the present invention.
FIG. 2 is a cross-sectional view of a second embodiment of the present invention.
FIG. 3 is a cross-sectional view of a third embodiment of the present invention.
実施例
次に本発明の実施例を図面に基づき以下の明細書で詳細に説明する。これらの種々の実施例において同じ構成要素ないし同じ作用の構成要素には、それぞれ同じ名称が用いられ、同じ符号が付されている。これらの図面は基本的には必ずしも縮尺通りのものではない。また個々の構成要素も基本的には実際のサイズ比で相互に示されたものではないことを述べておく。
EXAMPLES Next, examples of the present invention will be described in detail in the following specification based on the drawings. In these various embodiments, the same component or the component having the same action is given the same name and the same reference numeral. These drawings are not necessarily drawn to scale. It should also be noted that the individual components are not basically shown mutually in actual size ratios.
図１による実施例は、導体フレーム（リードフレーム）上の白色光を放出する発光ダイオード構成素子である。 The embodiment according to FIG. 1 is a light emitting diode component that emits white light on a conductor frame (lead frame).
金属性の導体フレーム（リードフレーム）１０（該フレーム上のチップ取付け領域１６には１つのＬＥＤチップ１が取付けられている）は、透過性のシリコン成形質量体３と共に変形されており、該シリコン成形質量体３からはその相対向する２つの側面においてそれぞれ１つのリードフレーム端子１１，１２が突出している。これらのリードフレーム端子１１，１２は、当該発光ダイオード構成素子の外部電気端子を表している。透過性のシリコン成形質量体３内部では、リードフレーム端子１１，１２の各々がチップ取付け領域１６から当該発光ダイオード構成素子の取付け面１３の方向に向けてＳ字状の湾曲部１４，１５を有している。
A metallic conductor frame (lead frame) 10 (one LED chip 1 is mounted on a
シリコン成形質量体３には、屈折率を高めるために無機質の充填剤、例えばＴｉＯ2、ＺｒＯ2、α−Ａｌ2Ｏ3などが添加されていてもよい。 In order to increase the refractive index, an inorganic filler such as TiO2, ZrO2, or α-Al2O3 may be added to the silicon molded mass 3.
図１による発光ダイオード光源の製造方法のもとでは、ＬＥＤチップ１がリードフレーム１０上のチップ取付け領域１６に取付けられ、リードフレーム端子１１，１２と導電的に接続される。これらのリードフレーム端子１１，１２には、半導体ＬＥＤチップ１の取付け前若しくは取付け後にＳ字状の湾曲部１４，１５が設けられる。半導体チップ１はリードフレーム１０のＳ字状湾曲部１４，１５も含めてプレス成形法若しくは射出成形法を用いて透過性のシリコン成形質量体３と共に変形される。シリコン成形質量体３はプレス成形若しくは射出成形においてさらに少なくとも部分的に硬化される。それにより十分に形状安定した一体型のプラスチック成形部５が形成される。
Under the light emitting diode light source manufacturing method according to FIG. 1, the LED chip 1 is mounted on the
白色光源のもとでは、半導体ＬＥＤチップ１は、青色スペクトル領域又は紫外スペクトル領域にある発光スペクトルを有する。半導体ＬＥＤチップ１は有利には、ＧａＮ又はＩｎＧａＮをベースに構成される。しかしながら半導体ＬＥＤチップ１はＺｎＳ／ＺｎＳｅなどの材料系からなっていてもよいし、前記スペクトル領域に適したその他の材料系からなっていてもよい。 Under a white light source, the semiconductor LED chip 1 has an emission spectrum in the blue spectral region or the ultraviolet spectral region. The semiconductor LED chip 1 is advantageously constructed on the basis of GaN or InGaN. However, the semiconductor LED chip 1 may be made of a material system such as ZnS / ZnSe, or may be made of another material system suitable for the spectral region.
半導体ＬＥＤチップ１の被着とコンタクト接続の後では、適切な射出成形装置ないしプレス成形装置において透過性のシリコン成形質量体３がリードフレーム端子１１，１２に射出される。シリコン成形質量体３においては、蛍光粉末４が埋め込まれる。この蛍光粉末は半導体ＬＥＤチップ１から放出された電磁放射の少なくとも部分的な波長変換を引き起こす変換材からなっている。この波長変換材を用いることにより、白色光源の光学的な印象を引き起こす放射スペクトルが生成される。蛍光粉末に適した蛍光材は、例えばＣｅｒドーピングされたイットリウム・アルミニウム・ガーネットパウダーやＣｅｒドーピングされたテルビウム・アルミニウム・ガーネットパウダーなどである。
After the semiconductor LED chip 1 is deposited and contact-connected, the permeable silicon molding mass 3 is injected into the
リードフレーム１０の事前作成とシリコン成形質量体３を用いた変形（これは場合によっては蛍光粉末４とさらなる充填材を含む）は、次のように行われる。すなわち、リードフレーム区分１１，１２がプラスチック成形部５から水平方向に引き出され、詳細にはそのろう付け端子面１１Ａ，１２Ａが実質的にプラスチック成形部５の裏側と同じ平面内（これは通常はプリント基板上の構成素子の載置面を表している）に存在するように行われる。これに対してリードフレーム端子１１，１２は注入前に既に最終形状に曲げられる。それらは変形前にチップ端子領域から取付け面の方向でＳ字状の湾曲部を既に有しており、そのためもはや変形後に構成素子に対して曲げによるストレスの影響を与えることはない。このことは特に僅かな体積のプラスチック成形部５しか有さないさらに小型化された構成素子の場合には特に有利となる。なぜならそこでは注入材とリードフレームとの間で層間剥離が生じた場合に、例えば曲げストレスによって完成後の構成素子の気密性が達成できなくなる大きな危険性が解決されるからである。
The
シリコン成形質量体３は、例えば１０分以下の硬化時間を有し、硬化された状態において６５ショアー硬度（Ｄ）以上の硬度を有する。 The silicon molded mass 3 has a curing time of 10 minutes or less, for example, and has a hardness of 65 Shore hardness (D) or more in the cured state.
完成した構成素子は有利にはプリント基板（ボード）上で平らな水平方向の端子面１１Ａ，１２Ａにリフロー法によってろう付け可能である。それにより表面実装法ＳＭＴ（Surface Mounting Technology）に適した構成素子が製造される。
The completed component can be brazed to the flat horizontal
同じようなやり方でＵＶ放射や青色放射を検出するフォトダイオード構成素子が形成され得る。 Photodiode components that detect UV radiation and blue radiation can be formed in a similar manner.
図２による第２実施例は、図１による第１実施例と特に次の点で異なっている。すなわち導体フレーム１０の箇所において絶縁性の支持基板１００が金属化層の形態の電気的な導体線路１１１，１１２を備えている点である。プラスチック成形部５は、支持基板１００上に設けられている。この構成素子は第１実施例と類似した手法で形成が可能である。
The second embodiment according to FIG. 2 differs from the first embodiment according to FIG. That is, the insulating
図３による第３実施例は、小型発光ダイオードであり、これは可撓性の導体フレーム１０と、ビーム発光性の活性領域を備えたＬＥＤチップ１と、プラスチック成形部５とを有している。可撓性の導体フレーム１０は、この場合６０μｍの厚さの金属箔１０１と同じく６０μｍの厚さのプラスチック箔１０２からなっており、これらは高精度に相互に接着されている。プラスチック箔はシリコンプラスチックで形成されていてもよい。
The third embodiment according to FIG. 3 is a small light-emitting diode, which has a
金属箔１０１は、カソードとアノードが定められるように押し抜き加工されている。それぞれカソードとアノードの上方ではプラスチック箔１０２内に押し抜き加工によって複数の孔部が設けられている。ＬＥＤチップ１の下側は前記複数の孔部の一方を貫通してカソード上にボンディングされている。アノードは他方の孔部を通るボンディングワイヤ２を介してＬＥＤチップ１の上側に接続されている。
The
前記可撓性のフレーム上で多数の構成部材を実現し得るようにするために、包み込みに対して例えばいわゆるキャビティツーキャビティモルディング法（Cavity−to−Cavity Molding）が用いられる。それにより各可撓性の導体フレーム１０上で、ＬＥＤチップ１とボンディングワイヤ２を包み込むプラスチック成形部５が製造される。構成部材を通る射出チャネルの案内によって、射出チャネルの数が低減できる。プラスチック成形部は、前述してきた実施例のプラスチック成形部と同じ材料からなる。
In order to be able to realize a large number of components on the flexible frame, for example, a so-called cavity-to-cavity molding method is used for the wrapping. Thereby, the
さらにこれらの構成部材はアレイモルディング法（Array−Molding）を用いて包み込むことも可能である。このアレイモルディング法の場合には、それぞれ多数の構成部材を含んだ工具の空洞が充填される。射出構成部材は成形部の冷却後に例えばカッティングによって分離される。アレイモルディング法の場合の面密度は有利には通常はキャビティツーキャビティモルディング法よりも高い。 Furthermore, these components can also be encapsulated using an array molding method. In the case of this array molding method, the cavity of the tool, each containing a number of components, is filled. The injection component is separated by, for example, cutting after the molded part is cooled. The areal density in the case of the array molding method is advantageously higher than that of the cavity-to-cavity molding method.
総じて小型発光ダイオードの設置面積（フットプリント）は約０.５ｍｍ×１.０ｍｍであり、全高は２５０μｍのみである。 In general, the installation area (footprint) of the small light-emitting diode is about 0.5 mm × 1.0 mm, and the total height is only 250 μm.
前述してきた説明、図面並びに請求項で開示されている本発明の特徴は、個別においても、任意の組み合わせにおいても本発明の本質であり得る。また発光ダイオードの代わりにフォトダイオードが用いられてもよいし、あるいはチップが発光ダイオード及びフォトダイオードとして作動するものであってもよい。 The features of the invention disclosed in the above description, drawings and claims may be the nature of the invention both individually and in any combination. A photodiode may be used instead of the light emitting diode, or the chip may operate as a light emitting diode and a photodiode.
Claims (9)
ビーム発光性及び／又はビーム受光性の半導体チップと、
プラスチック成形部と、
外部電気端子とを有し、
前記プラスチック成形部は、半導体構成素子によって発光及び／又は受光される電磁放射に対して透過性でかつ当該プラスチック成形部と共に半導体チップが少なくとも部分的に変形されており、
前記外部電気端子は、半導体チップの電気的なコンタクト面と電気的に接続されている形式の半導体構成素子において、
前記プラスチック成形部が、硬化反応性のシリコン成形質量体からなっていることを特徴とする半導体構成素子。 A beam-emitting and / or beam-receiving semiconductor component,
A beam emitting and / or beam receiving semiconductor chip;
Plastic molding part,
An external electrical terminal,
The plastic molded part is transparent to electromagnetic radiation emitted and / or received by a semiconductor component and the semiconductor chip is at least partially deformed together with the plastic molded part;
In the semiconductor component of the type in which the external electrical terminal is electrically connected to the electrical contact surface of the semiconductor chip,
A semiconductor component, wherein the plastic molding part is made of a curing reactive silicon molding mass.
前記半導体チップを導体フレーム又は支持基板又は支持箔の部分領域も含めて射出成形部の空胴内へ設け、
シリコン成形質量体を射出成形法又はプレス成形法を用いて空洞内へ射出し、
前記シリコン成形質量体を空胴内で少なくとも形状安定したプラスチック成形部が形成されるように硬化させることを特徴とする、請求項１から６いずれか１項記載の半導体構成素子の製造方法。 Fixing a semiconductor chip on a metallic conductor frame or supporting substrate or supporting foil with external electrical terminals;
The semiconductor chip is provided in the cavity of the injection-molded part including the conductor frame or the support substrate or the partial region of the support foil,
Silicon molding mass is injected into the cavity using injection molding or press molding,
The method of manufacturing a semiconductor component according to any one of claims 1 to 6, wherein the silicon molding mass is cured so as to form a plastic molding portion having at least a shape stability in a cavity.
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| DE10361801A DE10361801A1 (en) | 2003-12-30 | 2003-12-30 | Radiation emitting and/or radiation receiving semiconductor element with a semiconductor chip useful in LED technology, and in reaction-flow processes and surface mounting technology (SMT) |
| DE10361801.5 | 2003-12-30 | ||
| DE202004005228.8 | 2004-04-02 | ||
| DE202004005228U DE202004005228U1 (en) | 2003-12-30 | 2004-04-02 | Radiation-emitting and / or radiation-receiving semiconductor component |
| PCT/DE2004/002738 WO2005064696A1 (en) | 2003-12-30 | 2004-12-14 | Radiation-emitting and/or radiation-receiving semiconductor component and method for the production thereof |
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| DE102008024704A1 (en) | 2008-04-17 | 2009-10-29 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
| DE102008044847A1 (en) * | 2008-08-28 | 2010-03-04 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
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| TWI447965B (en) * | 2010-01-22 | 2014-08-01 | Tzu Kuei Wen | Method for led chip package |
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| JP5049382B2 (en) | 2010-12-21 | 2012-10-17 | パナソニック株式会社 | LIGHT EMITTING DEVICE AND LIGHTING DEVICE USING THE SAME |
| DE102012102122A1 (en) * | 2012-03-13 | 2013-09-19 | Osram Opto Semiconductors Gmbh | Area light source |
| US9711489B2 (en) | 2013-05-29 | 2017-07-18 | Cree Huizhou Solid State Lighting Company Limited | Multiple pixel surface mount device package |
| DE102015105661B4 (en) * | 2015-04-14 | 2022-04-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic device with a mixture comprising a silicone and a fluoro-organic additive |
| US10680147B2 (en) * | 2017-11-24 | 2020-06-09 | Osram Oled Gmbh | Method of producing a lighting device |
| US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
| US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
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| JP3857435B2 (en) * | 1998-08-31 | 2006-12-13 | ローム株式会社 | Optical semiconductor element, optical semiconductor element mounting structure, and optical semiconductor element group packaging structure |
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| DE19964252A1 (en) * | 1999-12-30 | 2002-06-06 | Osram Opto Semiconductors Gmbh | Surface mount component for an LED white light source |
| JP3609709B2 (en) * | 2000-09-29 | 2005-01-12 | 株式会社シチズン電子 | Light emitting diode |
| DE10214119A1 (en) * | 2002-03-28 | 2003-10-23 | Osram Opto Semiconductors Gmbh | Optoelectronic component comprises a casting compound which lets through radiation and consist of silicone or a silicone resin |
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- 2003-12-30 DE DE10361801A patent/DE10361801A1/en not_active Withdrawn
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2004
- 2004-04-02 DE DE202004005228U patent/DE202004005228U1/en not_active Expired - Lifetime
- 2004-12-14 CN CN200480032007.6A patent/CN1875491B/en not_active Expired - Lifetime
- 2004-12-14 JP JP2006545908A patent/JP4939946B2/en not_active Expired - Lifetime
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| JPS59107584A (en) * | 1982-12-13 | 1984-06-21 | Casio Comput Co Ltd | light emitting diode |
| JPH05327028A (en) * | 1992-05-26 | 1993-12-10 | Sharp Corp | Manufacture of optical device |
| JP2002314142A (en) * | 2001-04-09 | 2002-10-25 | Toyoda Gosei Co Ltd | Light emitting device |
| JP2002374007A (en) * | 2001-06-15 | 2002-12-26 | Toyoda Gosei Co Ltd | Light emitting device |
| WO2003005458A1 (en) * | 2001-06-29 | 2003-01-16 | Osram Opto Semiconductors Gmbh | Surface-mountable, radiation-emitting component and method for the production thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011159767A (en) * | 2010-01-29 | 2011-08-18 | Toshiba Corp | Led package and method for manufacturing the same |
| JP2011258658A (en) * | 2010-06-07 | 2011-12-22 | Toshiba Corp | Semiconductor light-emitting device and method of manufacturing the same |
| US9246065B2 (en) | 2010-06-07 | 2016-01-26 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1875491B (en) | 2010-04-21 |
| DE202004005228U1 (en) | 2005-05-19 |
| DE10361801A1 (en) | 2005-08-04 |
| JP4939946B2 (en) | 2012-05-30 |
| CN1875491A (en) | 2006-12-06 |
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