JP2007335938A - Method of manufacturing piezoelectric vibrator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a piezoelectric vibrator for preventing a resonance frequency from being reduced as compared with a target frequency with time by utilizing an existing manufacturing line. <P>SOLUTION: The method includes: a mounting process S1 for mounting a piezoelectric vibration element 12 in an insulating vessel 1 by a silicone adhesive 13; a frequency adjustment process S2 for increasing or decreasing the thickness of an excitation electrode film 21 to adjust the resonance frequency of the piezoelectric vibration element 12 to a prescribed value; a temporary attachment process S3 for attaching a metal lid 15 to the insulating vessel 1 to which the piezoelectric vibration element 12 is mounted; a sealing process S6 for filling the insulating vessel 1 with nitrogen gas and silicone vapor by leaving the insulating vessel 1 to which the metal lid 15 is attached temporarily in an atmosphere filled with nitrogen gas and silicone vapor; and a sealing process S7 for sealing the airtight vessel 1 with the metal lid 15. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a method for manufacturing a piezoelectric vibrator capable of preventing a decrease in the resonance frequency of a piezoelectric vibration element hermetically sealed in a state where it is fixed in an insulating container with a silicone-based conductive adhesive, It is particularly suitable for manufacturing a piezoelectric vibrator using existing manufacturing equipment.

A surface mount type piezoelectric device having a structure in which a piezoelectric vibration element is hermetically sealed in an insulating container, such as a crystal resonator, is a reference frequency generation source in communication equipment such as a mobile phone and a pager, and electronic equipment such as a computer. Although these are used as filters, etc., miniaturization is also required for piezoelectric devices in response to miniaturization of these various devices.
In addition, a piezoelectric oscillator as a piezoelectric device for surface mounting has a recess in a state where a piezoelectric vibration element and circuit components constituting an oscillation circuit are accommodated in a recess formed on the upper surface of an insulating container body made of, for example, ceramic. The opening is sealed with a metal lid.
The piezoelectric vibration element has a structure in which a metal film constituting an excitation electrode and a lead electrode is formed on the surface of a piezoelectric substrate, and the piezoelectric vibration element is formed on the internal electrode in an insulating container for surface mounting with a silicone-based conductive adhesive. (Hereinafter referred to as “silicone adhesive”), the container is hermetically sealed in a state of being held.

FIG. 9 shows a phenomenon in which the resonance frequency of the quartz resonator element hermetically sealed in the insulating container decreases. From FIG. 9, the frequency decrease does not occur suddenly, but gradually proceeds with time. I can see that. This tendency hardly appears at the stage when the manufacturer of the piezoelectric device manufactures the crystal unit, but when the assembly manufacturer mounts the piezoelectric device on a printed circuit board and the product is on the market, the frequency It means that the situation where the decline of the surface comes to the surface occurs.

Furthermore, it has been found out that an assembly manufacturer has a strong tendency to decrease the frequency after a reflow process for mounting a piezoelectric device on a printed circuit board. In addition, there is also a fact that the frequency of occurrence of the frequency decrease is increasing with the recent miniaturization of the quartz crystal vessel due to the demand for miniaturization.
However, although various inferences have been made about the causes of these phenomena, the actual situation is that no clear factor has been grasped and no fundamental solution has been made.
For example, Patent Document 1 discloses a technique aimed at solving the phenomenon of a frequency decrease of a crystal unit over time.

Patent Document 1 considers that the cause of the frequency decrease phenomenon of the quartz resonator over time is an oxidation phenomenon that occurs on the surface layer of the metal film that constitutes the electrode, and a method of vapor deposition or sputtering on the surface layer of the metal film. A solution is disclosed in which an insulating film (SiO ₂ film) is attached to cover the entire surface, or the surface layer of the metal film is previously oxidized, nitrided or carbonized to form a protective film. It should be noted that this oxidation phenomenon occurs only for the nickel portion deposited up to the surface layer of the gold film when a nickel underlayer is provided under the gold film. Gold parts other than the nickel part are stable and do not oxidize.

However, this conventional technique has many problems as follows. That is, when the SiO ₂ film is formed and covered on the surface of the metal film by vapor deposition or the like, strict thickness control is required. While the SiO ₂ film is poor in adhesion with gold and easily peeled off, if the film thickness is increased so that the SiO ₂ film does not peel from the gold surface, residual stress is generated in the vibrator due to the film stress. That is, distortion occurs due to temperature change, leading to deterioration of temperature characteristics. Furthermore, when a protective film such as an oxide film, a nitride film, or a carbonized film is formed on the gold film surface, the film is formed only on the portion where nickel is deposited. Since there is a variation in the area of the individual, there is a variation in mass addition by the protective film, and a frequency adjustment is required. Since the protective film is not formed on the gold film portion where nickel is not deposited, the aging frequency reduction phenomenon after sealing cannot be resolved (silicon molecules are gradually chemically adsorbed on the gold film portion). In other words, it was found that the oxidation of the nickel portion partially or irregularly deposited on the gold film surface is one cause of the frequency decrease but not the fundamental cause. Therefore, the solution proposed by the above publication is not sufficient.

In addition, in order to delay the speed at which the resonance frequency after hermetic sealing decreases, it is possible to extract silicone vapor from the inside of the insulating container before sealing (so-called annealing), but even if degassing is performed once, As long as the silicone adhesive is present in the container, silicone vapor is generated and gradually adheres to the excitation electrode film, resulting in frequency fluctuations. Although it is conceivable to change the type of adhesive, a silicone adhesive is extremely useful in order to satisfy the specification of impact resistance, and there is no adhesive superior to the silicone adhesive at present.
JP 7-154187 A

Therefore, the inventors of the present application have continued to investigate the cause of the decrease in the frequency. As a result, in a test for accelerating aging (accelerated aging test), a stable region exists after the frequency has decreased to a predetermined value. It was found that the frequency fluctuation after that does not occur. Based on this research result, in Japanese Patent Application No. 2005-27838, the piezoelectric vibration element is hermetically sealed in a state where the piezoelectric vibration element is held in the insulating container by the conductive bonding member, and is released from the conductive bonding member. Piezoelectric resonator element, piezoelectric vibrator, piezoelectric oscillator, and frequency stabilization method capable of preventing the resonance frequency from dropping below the target frequency over time due to the gas component adhering to and deposited on the metal film of the piezoelectric resonator element And a method of manufacturing a piezoelectric vibrator.

However, the method for manufacturing a piezoelectric vibrator proposed in Japanese Patent Application No. 2005-27838 is not based on the configuration of an existing manufacturing line.
In order to manufacture the piezoelectric vibrator of No. 1, there is a problem that it is necessary to prepare a new production line.
Accordingly, the present invention has been made in view of the above, and an object of the present invention is to provide a method for manufacturing a piezoelectric vibrator that uses an existing manufacturing line to prevent the resonance frequency from decreasing below the target frequency over time. And

In order to achieve the above object, a method of manufacturing a piezoelectric vibrator of the present invention includes a mounting step of mounting a piezoelectric vibration element in which a metal film is formed on a piezoelectric substrate surface made of a piezoelectric material in a container with a conductive bonding member, A frequency adjustment step of adding or reducing the thickness of the metal film to adjust the resonance frequency of the piezoelectric vibration element to a predetermined value, a temporary attachment step of temporarily attaching a sealing member to a container on which the piezoelectric vibration element is mounted, and sealing An enclosure step of enclosing a gas having an unbonded electron pair in the container by leaving the container temporarily attached with the member in an atmosphere filled with a gas having an unbonded electron pair and an inert gas; And a sealing step of sealing with a sealing member.
If the piezoelectric vibrator is manufactured as in the present invention, the resonance frequency does not decrease with time in accordance with the stand-alone type manufacturing process in which each process equipment is configured independently. Can be manufactured. That is, since it is possible to manufacture a piezoelectric vibrator in which the resonance frequency does not decrease with time using existing manufacturing equipment, it is possible to save labor and reduce the cost of the manufacturing equipment.

In addition, the method for manufacturing an electric vibrator of the present invention includes a mounting step of mounting a piezoelectric vibration element in which a metal film is formed on a piezoelectric substrate surface made of a piezoelectric material in a container with a conductive bonding member, and resonance of the piezoelectric vibration element. A frequency adjustment step of adding or reducing the thickness of the metal film to adjust the frequency to a predetermined value;
A spraying step of spraying a gas having a non-bonded electron pair in a container equipped with a piezoelectric vibration element and a sealing step of sealing the container with a sealing member are provided.
If a piezoelectric vibrator is manufactured as in the present invention, a manufacturing line of a type in which a step of temporarily attaching a sealing member to a container and a sealing step of sealing the container with a sealing member are performed in separate facilities. By simply adding a spraying step of spraying a gas having a non-bonded electron pair to the process, it becomes possible to manufacture a piezoelectric vibrator that does not decrease the resonance frequency with time, so labor saving of manufacturing equipment, Cost reduction can be achieved.

Moreover, the manufacturing method of the piezoelectric vibrator of the present invention includes a temporary attachment step of temporarily attaching the sealing member to the container after the spraying step. If a piezoelectric vibrator is manufactured as in the present invention, the resonance frequency decreases with time in accordance with the manufacturing process of a type of manufacturing line that performs direct sealing without temporarily attaching a sealing member to the container. This makes it possible to manufacture a piezoelectric vibrator without any problem, and thus it is possible to save labor and reduce the cost of manufacturing equipment.

The piezoelectric vibrator manufacturing method of the present invention includes a mounting step of mounting a piezoelectric vibration element in which a metal film is formed on a piezoelectric substrate surface made of a piezoelectric material in a container with a conductive bonding member, and a resonance frequency of the piezoelectric vibration element. A frequency adjustment step of adding or reducing the thickness of the metal film to adjust the value to a predetermined value;
An enclosure step of enclosing a gas having a non-bonded electron pair in the container by leaving the container in an atmosphere filled with a gas having an unbonded electron pair and an inert gas, and the container with a sealing member And a sealing step for sealing.
If a piezoelectric vibrator is manufactured as in the present invention, the resonance frequency decreases with time in accordance with the manufacturing process of a type of manufacturing line that performs direct sealing without temporarily attaching a sealing member to the container. This makes it possible to manufacture a piezoelectric vibrator without any problem, and thus it is possible to save labor and reduce the cost of manufacturing equipment.

Before describing the embodiment of the present invention, the configuration of the piezoelectric vibrator proposed by the present applicant in Japanese Patent Application No. 2005-27838 will be described.
FIG. 7 is a cross-sectional view showing a configuration of a surface mount type piezoelectric oscillator provided with the piezoelectric vibrator previously proposed by the present applicant.
The piezoelectric oscillator shown in FIG. 7 has an insulating container 1 (for example, a ceramic container) having a substantially H-shaped longitudinal cross-sectional shape having recesses 2 and 3 at the top and bottom and four mounting terminals 5 on the annular bottom surface 4. )
And two internal pads 11 provided in the upper recess 2 as a thickness-slip type piezoelectric material such as A
In a state where two excitation electrode films 21 on a quartz-crystal vibration element (piezoelectric vibration element) 12 made of a T-cut quartz plate are electrically and mechanically connected using a silicone-based conductive adhesive (silicone adhesive) 13, respectively. A metal lid (sealing member) 15 that hermetically seals the upper recess 2, a lower pad 6 that is disposed on the ceiling surface 3 a of the lower recess 3 and is electrically connected to each internal pad 11 and each mounting terminal 5, and a lower pad 6 and an IC component 25 that constitutes an oscillation circuit mounted on the device.

Of the mounting terminals 5, the crystal oscillator side mounting terminal is electrically connected to one of the internal pads 11.
The upper part of the insulating container 1 having the upper recess 2, the internal pad 11, the crystal resonator element 12, and the metal lid 15 constitute a crystal resonator (piezoelectric resonator). That is, the crystal resonator is electrically and mechanically connected to the crystal resonator element 12 on the internal pad 11 in the upper recess 2 of the insulating container 1 made of an insulating material such as ceramic, using a silicone adhesive 13. A metal lid 15 is electrically and mechanically connected to the conductor ring on the upper surface of the insulating container 1 by welding or the like, and the inside of the recess 2 is hermetically sealed. The quartz resonator element 12 includes an excitation electrode film (metal film) 21 made of a metal material such as gold on both front and back surfaces of a quartz substrate (piezoelectric substrate) 20 that is a thickness-slip piezoelectric material, and an edge of the substrate from the excitation electrode film 21. The lead electrode 22 extending in the direction is formed.

Although the cause of the phenomenon in which the frequency decreases over time after the quartz resonator element 12 is hermetically sealed in the insulating container 1 has not been clarified so far, as a result of research by the present inventors, the silicone adhesive 1
This is because the silicon molecules in the cyclic dimethylpolysiloxane vapor (hereinafter referred to as “silicone vapor”) generated from 3 and filled in the insulating container 1 are gradually chemically adsorbed on the surface of the excitation electrode film 21 of the quartz substrate 20. It is believed that there is. In other words, the silicone adhesive 13 is a conductive adhesive in which a silver filler is mixed in a silicone resin. At room temperature, the silicon oscillator 13 is heated when the crystal oscillator is mounted on the motherboard by reflow, and the IC component 25 is flipped. Silicone vapor is also released from the silicone resin by heating during chip mounting. The released silicone vapor diffuses into the insulating container 1 sealed with the metal lid 15. Silicone molecules having non-bonded electron pairs have a property of being easily chemically adsorbed to the metal surface constituting the excitation electrode film 21, and when the silicone molecule film is adsorbed to the excitation electrode film surface by a predetermined amount or more,
This causes a problem that the oscillation frequency of the crystal oscillator as a finished product decreases with time. Such a problem occurs more remarkably in the present situation where the insulating container is miniaturized and the internal volume is minimized.

In view of this, the present inventors disclosed in Japanese Patent Application No. 2005-27838 a method for early stabilization of frequency by heating before shipping, and adsorption of silicone molecules that allows the frequency of the crystal resonator element to reach the frequency stable region in a short time without heating. An acceleration method is proposed.
In the early stabilization method of stabilizing the frequency of the crystal resonator element without depending on heating, the insulating container 1
A monomolecular film of silicone molecules is formed in advance so as to cover the entire surface of the excitation electrode film 21 by exposing the excitation electrode film 21 of the quartz substrate 20 to an atmosphere of silicone vapor prepared in advance before sealing. ing. In this case, since there is no long-term heat treatment step for making the inside of the recess 2 of the insulating container 1 necessary for the early stabilization method by heating before shipping into an atmosphere of silicone vapor, The resonance frequency can be reduced to a predetermined target value (target frequency) from the set value at the time of the frequency adjustment process at once, and can be brought into a stable state.

A manufacturing device for manufacturing a crystal oscillator in which the frequency of the crystal resonator element is stabilized without depending on heating,
Alternatively, in the manufacturing method, as shown in FIG.
Is evaporated to make the silicon vapor a high-concentration atmosphere, and the quartz resonator element 12 provided with the excitation electrode film on the quartz substrate surface is disposed in the high-concentration atmosphere of the silicone vapor, so that the silicon is formed on the surface of the excitation electrode film. A molecule is chemisorbed to form a monomolecular film of silicone molecules. Alternatively, a small amount of silicone stock solution is dropped into an insulating container 1 in which a crystal resonator element 12 having an excitation electrode film formed on a piezoelectric substrate surface is held by a silicone adhesive, and the insulating container 1 is sealed. By heating at a temperature suitable for transpiration, silicone molecules are chemically adsorbed on the surface of the excitation electrode film to form a monomolecular film of silicone molecules.

However, the method for manufacturing a piezoelectric vibrator proposed by the present inventors in the Japanese Patent Application No. 2005-27838 is not necessarily suitable for an existing manufacturing line for manufacturing a piezoelectric vibrator. For example, even if a process of forming a monomolecular film of silicone molecules on the surface of the excitation electrode film using the chamber 40 shown in FIG. 8 is added to an existing production line, the silicon vapor easily evaporates. The silicone vapor in the insulating container 1 is volatilized before moving to the sealing step for sealing, and the silicone vapor cannot be sealed in the insulating container 1.
Further, when the insulating container 1 is sealed by dripping a small amount of the silicone stock solution into the insulating container 1, a heating process is further required for heating at a temperature suitable for the silicone stock solution to evaporate.

Therefore, in the method for manufacturing a piezoelectric vibrator according to the embodiment of the present invention, there is provided a method for manufacturing a piezoelectric vibrator that uses an existing manufacturing facility to prevent the resonance frequency from decreasing below the target frequency over time. The purpose is that.
Here, as a manufacturing line conventionally used for manufacturing a piezoelectric vibrator, a so-called stand-alone type manufacturing line in which manufacturing equipment in each process is configured independently and manufacturing equipment in each process is directly connected. There is a so-called in-line type production line. For the in-line type, the step of temporarily attaching the metal lid 15 to the insulating container 1 and the metal lid 15
And a process of sealing the insulating container 1 in a separate facility (hereinafter referred to as “first in-line method”), and the metal lid 15 without temporarily attaching the metal lid 15 to the insulating container 1. A type of production line (hereinafter referred to as “second”
Called "inline system").
Therefore, in the present embodiment, a method for manufacturing a piezoelectric vibrator in which the resonance frequency does not decrease below the target frequency with time using each manufacturing line will be described below.

First, as a first embodiment of the present invention, a method of manufacturing a piezoelectric vibrator that uses a stand-alone type manufacturing facility to prevent a resonance frequency from lowering from a target frequency over time will be described. In the present embodiment, a case where a piezoelectric vibrator is configured in the insulating container 1 of the piezoelectric oscillator shown in FIG. 7 will be described as an example.
FIG. 1 is a diagram showing a manufacturing process of the piezoelectric vibrator according to the first embodiment of the present invention, and FIG. 2 is a diagram schematically showing main processes of the manufacturing process shown in FIG.
In this case, first, in the base plate mounting step S1 shown in FIG. 1, the crystal resonator element 12 is mounted on the internal pad 11 coated with the silicone adhesive 13 in the recess 2 of the insulating container 1 to 150 ° C.
After heating for 1 hour to dry the silicone adhesive 13, it is placed on a hand carry and carried to the frequency adjustment step S2. In the frequency adjusting step S2, a frequency measuring device is connected to the mounting terminal 5 of the insulating container 1, and the metal film of the excitation electrode film 21 of the crystal vibrating element 12 is used by the ion beam method as necessary while performing frequency measurement with the frequency measuring device. The frequency is adjusted by adjusting the thickness. At this time, the resonance frequency of each piece is set higher by a predetermined frequency than the target frequency. When the frequency adjustment is completed in the frequency adjustment step S2, it is again placed on the hand carry and carried to the lid temporary attachment step S2.

In the lid temporary attaching step S3, as shown in FIG. 2A, the metal lid 15 is covered with the upper surface of the insulating container 1 on which the crystal resonator element 12 is mounted, and the metal lid 15 and the insulating container 1 are partially fixed. . For example, the metal lid 15 is partially temporarily attached by spot welding or the like (FIG. 2 (
b)). When the tacking of the lid is completed in the lid tacking step S3, the lid is placed again on the hand carry 51 and carried to the next step as shown in FIG.
In the next evacuation step S5, as shown in FIG. 2D, after the hand carry 51 is stored in the chamber 52, the inside of the chamber 52 is sealed, and the internal air is exhausted through the exhaust port 52a. To a vacuum. Next, as an annealing process (heat treatment) step S5, the chamber 52 is left at a predetermined temperature (for example, 270 ° C.) for a certain time (for example, 1 hour), and then the process proceeds to a nitrogen and silicone vapor sealing step S6. Annealing (heat treatment)
Step S5 is not necessarily performed.

In the nitrogen and silicone vapor sealing step S 6, a mixed gas of nitrogen gas (N ₂ gas) and siloxane is supplied into the chamber 52 from the inlet 52 _{b of the} chamber 52 to supply the chamber 5.
N ₂ gas and cyclic dimethylpolysiloxane (silicone vapor) are introduced into 2. At this time, since the metal lid 15 joined to the insulating container 1 in the chamber 52 is in a temporarily attached state, N ₂ gas is introduced into the insulating container 1 from the gap between the insulating container 1 and the metal lid 15 and the unsealed portion. And silicone vapor will enter. Thereafter, from the chamber 52 to the hand carry 51
Is taken out and carried to the next sealing step S7.

In the sealing step S7, in order to seal the unsealed portion between the insulating container 1 and the metal lid 15, the carry 51 is taken out from the chamber 52, and the insulating container 1 and the metal lid 15 are finally sealed by seam welding. Like to do. In this case, since the metal lid 15 has already been temporarily attached to the insulating container 1 before sealing the insulating container 1 and the metal lid 15 in the sealing process S7, the main sealing is performed in the sealing process S7. It is possible to minimize the leakage of silicone vapor from the inside of the insulating container 1 before performing. That is, the inside of the insulating container 1 can be sealed with silicone vapor sealed.
Such a manufacturing process is the same as that of the conventional stand-alone type manufacturing process.
It can be realized simply by changing the nitrogen sealing process for sealing N2 gas into a nitrogen and silicone vapor sealing process. In order to change the conventional nitrogen sealing process to the nitrogen and silicone vapor sealing process of the present embodiment, the low silicone liquid can be sprayed to the nitrogen pipe connected to the air inlet 52b of the chamber 52 shown in FIG. Existing stand-alone type equipment can be used simply by attaching a sprayer.

Next, as a second embodiment of the present invention, a method for manufacturing a piezoelectric vibrator that uses a first in-line manufacturing facility to prevent the resonance frequency from dropping below the target frequency over time will be described.
FIG. 3 is a diagram showing a manufacturing process of the piezoelectric vibrator according to the second embodiment of the present invention, and FIG. 4 is a diagram schematically showing main processes of the manufacturing process shown in FIG.
In this case, in the base plate mounting step S11 shown in FIG. 3, the crystal resonator element 12 is mounted on the internal pad 11 coated with the silicone adhesive 13 in the recess 2 of the insulating container 1, and the temperature is set to 1 at 150 ° C.
After heating for a period of time to dry the silicone adhesive 13, it is automatically conveyed to the frequency adjusting step S12. In the frequency adjustment step S12, a frequency measuring device is connected to the mounting terminal 5 of the insulating container 1,
The frequency adjustment is performed by adjusting the metal film thickness of the excitation electrode film 21 of the crystal resonator element 12 by an ion beam method as necessary while performing frequency measurement with a frequency measuring device. At this time, the resonance frequency of each piece is set higher by a predetermined frequency than the target frequency. When the frequency adjustment is completed in the frequency adjustment step S12, the annealing process (heat treatment) step S13 is performed.
It is automatically transferred to the chamber where

In the annealing (heat treatment) step S13, the insulating container 1 that has been automatically conveyed from the frequency adjustment step S12 is left in a predetermined temperature (for example, 270 ° C.) atmosphere for a predetermined time (for example, one hour), and then the next silicone spraying step. It is automatically conveyed to S14. Note that the annealing (heat treatment) step S13 is not necessarily performed.
In the silicone spraying step S14, the chamber 6 is placed on the carry 61 as shown in FIG.
After spraying silicone from the nozzle 62 into the inside of the insulating container 1 that is automatically conveyed into 0,
As lid temporary attachment process S15, metal lid 1 is formed on the upper surface of insulating container 1 sprayed with silicone.
5, the metal lid 15 and the insulating container 1 are partially fixed. The silicone spraying step S14 and the lid tacking step S15 are preferably performed in the same chamber as a series of steps. In the lid temporary attachment step S15, the insulating container 1 temporarily attached with the metal lid 15 is again placed on the carry 61 and automatically conveyed to the chamber 63 where the sealing step S16 is performed.
In the sealing step S16, in order to seal the unsealed portion between the insulating container 1 and the metal lid 15,
The insulation container 1 and the metal lid 15 are finally sealed by seam welding. Also in this case, since the metal lid 15 is already temporarily attached to the insulating container 1 before sealing the insulating container 1 and the metal lid 15 in the sealing process S16, the main sealing is performed in the sealing process S16. It is possible to minimize the leakage of silicone vapor from the inside of the insulating container 1 before. That is,
The inside of the insulating container 1 can be hermetically sealed with silicone vapor sealed therein.
Such a manufacturing process can be realized simply by adding a spraying process for spraying siloxane to the conventional first inline system manufacturing process, so that the existing first inline system equipment can be used.

Next, as a third embodiment of the present invention, a method for manufacturing a piezoelectric vibrator that uses a second in-line manufacturing facility to prevent the resonance frequency from dropping below the target frequency over time will be described.
FIG. 5 is a diagram showing a manufacturing process of the piezoelectric vibrator according to the third embodiment of the present invention, and FIG. 6 is a diagram schematically showing main processes of the manufacturing process shown in FIG.
Also in this case, as in the second embodiment, in the base plate mounting step S11, the insulating container 1
After the crystal resonator element 12 is mounted on the internal pad 11 to which the silicone adhesive 13 in the recess 2 is applied, the frequency adjustment is performed in the frequency adjustment step S12. When the frequency adjustment is completed in the frequency adjustment step S12, the annealing process (heat treatment) step S1 is performed next.
3 is automatically conveyed to the chamber for performing 3 and annealed, and then is automatically conveyed on the conveyance belt 71 into the chamber 70 where the next silicone spraying step S14 and the sealing step S16 are continuously performed.

The inside of the chamber 70 is filled with, for example, nitrogen gas, and the insulating container 1 transported by the transport belt 71 is transferred from the transport belt 71 to the rotary transport plate 72 and further transported. Spraying process S14 is performed. That is, silicone is sprayed from the nozzle 62 into the insulating container 1. Thereafter, the upper surface of the insulating container 1 is covered with the metal lid 15 and further transported by the rotary transport plate 72, and the sealing step S16 is performed at a predetermined position. The insulating container 1 sealed in the sealing step S <b> 16 is transferred from the rotary conveyance plate 72 to the conveyance belt 73 at a predetermined position, and is conveyed outside the chamber 70 by the conveyance belt 73. In this case, since the silicone is sprayed on the insulating container 1 in the chamber 70 for main sealing the insulating container 1 in the sealing step S16, the insulating container 1
It is possible to minimize leakage of silicone vapor inside.
Since such a manufacturing process only needs to add a silicone spraying process for spraying silicone to the conventional second inline manufacturing process, the existing second inline system equipment can be used.

In the third embodiment, a silicone spraying process for spraying silicone is added to the conventional second in-line manufacturing process. However, instead of nitrogen gas filling the chamber 70, nitrogen and You may make it fill with silicone vapor | steam. By doing so, it becomes possible to enclose silicone vapor in the insulating container 1 without adding a silicone spraying step.

It is a figure showing a manufacturing process of a piezoelectric vibrator concerning a 1st embodiment of the present invention. It is the figure which showed typically the main processes of the manufacturing process shown in FIG. It is the figure which showed the manufacturing process of the piezoelectric vibrator which concerns on the 2nd Embodiment of this invention. It is the figure which showed typically the main processes of the manufacturing process shown in FIG. It is the figure which showed the manufacturing process of the piezoelectric vibrator which concerns on the 3rd Embodiment of this invention. It is the figure which showed typically the main processes of the manufacturing process shown in FIG. It is sectional drawing which showed the structure of the surface mount type piezoelectric oscillator provided with the piezoelectric vibrator previously proposed by the present applicant. It is the figure which showed an example of the process of forming the monomolecular film of a silicone molecule on the surface of an excitation electrode film. It is the figure which showed the phenomenon in which the resonant frequency of the crystal oscillation element sealed in the insulating container falls.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Insulation container, 2 ... Recessed part, 3 ... Lower recessed part, 3a ... Ceiling surface, 4 ... Bottom surface, 5 ... Mounting terminal, 6
... Lower pad, 11 ... Internal pad, 12 ... Quartz vibrating element, 13 ... Silicone adhesive, 15
... Metal lid, 20 ... Quartz substrate, 21 ... Excitation electrode film, 22 ... Lead electrode, 25 ... IC component, 40, 52, 60, 63, 70 ... Chamber, 51 ... Hand carry, 52a ... Exhaust port, 52b ... Intake air Mouth, 61 ... carry, 62 ... nozzle, 71, 73 ... conveyor belt, 72 ... rotating conveyor plate

Claims (4)

A mounting step of mounting a piezoelectric vibration element in which a metal film is formed on a piezoelectric substrate surface made of a piezoelectric material in a container with a conductive bonding member;
A frequency adjustment step of adding or reducing the thickness of the metal film to adjust the resonance frequency of the piezoelectric vibration element to a predetermined value;
A temporary attachment step of temporarily attaching a sealing member to the container on which the piezoelectric vibration element is mounted;
The container having the sealing member temporarily attached is left in an atmosphere filled with a gas having an unbonded electron pair and an inert gas, thereby enclosing the gas having the unbonded electron pair in the container. An encapsulation process to
A sealing step of sealing the container with the sealing member;
A method of manufacturing a piezoelectric vibrator, comprising: A mounting step of mounting a piezoelectric vibration element in which a metal film is formed on a piezoelectric substrate surface made of a piezoelectric material in a container with a conductive bonding member;
A frequency adjustment step of adding or reducing the thickness of the metal film to adjust the resonance frequency of the piezoelectric vibration element to a predetermined value;
A spraying step of spraying a gas having a non-bonded electron pair in the container on which the piezoelectric vibration element is mounted;
A sealing step of sealing the container with a sealing member;
A method of manufacturing a piezoelectric vibrator, comprising: The method for manufacturing a piezoelectric vibrator according to claim 2, further comprising a temporary attaching step of temporarily attaching a sealing member to the container after the spraying step. A mounting step of mounting a piezoelectric vibration element in which a metal film is formed on a piezoelectric substrate surface made of a piezoelectric material in a container with a conductive bonding member;
A frequency adjustment step of adding or reducing the thickness of the metal film to adjust the resonance frequency of the piezoelectric vibration element to a predetermined value;
An enclosure step of enclosing the gas having the non-bonded electron pair in the container by leaving the container in an atmosphere filled with a gas having a non-bonded electron pair and an inert gas;
A sealing step of sealing the container with a sealing member;
A method of manufacturing a piezoelectric vibrator, comprising:

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