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JP2007329516A - Semiconductor light-emitting apparatus - Google Patents

Semiconductor light-emitting apparatus Download PDF

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Publication number
JP2007329516A
JP2007329516A JP2007239333A JP2007239333A JP2007329516A JP 2007329516 A JP2007329516 A JP 2007329516A JP 2007239333 A JP2007239333 A JP 2007239333A JP 2007239333 A JP2007239333 A JP 2007239333A JP 2007329516 A JP2007329516 A JP 2007329516A
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lead frame
metal body
led chip
semiconductor light
emitting device
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JP2007239333A
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Japanese (ja)
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Yasuji Takenaka
靖二 竹中
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting apparatus using a light-emitting device such as a light-emitting diode, which apparatus has high heat radiation performance and has excellent light-emitting efficiency and service life characteristics without deteriorating processability of a lead frame and reliability of an LED chip. <P>SOLUTION: The semiconductor light-emitting apparatus includes: an LED chip 4; a metal body 8 used for mounting the LED chip 4; a lead frame 2; a resin section 3 surrounding the metal body 8 and fixing the lead frame 2; and an epoxy resin 6 for protecting the LED chip 4. The metal body 8 is exposed from the resin section 3 so that its lower part can come close to or contact the mounting substrate, and is formed so as to extend to the lower part of the lead frame 2. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は半導体発光装置に関し、特に、発光ダイオード（ＬＥＤ）などの発光素子を用いた半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device using a light emitting element such as a light emitting diode (LED).

従来の半導体発光装置としては、図８のような構造が代表的である。
図８においては、第１のリードフレーム１および第２のリードフレーム２を固定する形で樹脂部３がインサート成型等で形成され、第１のリードフレーム１上にはＡｇペースト７によりＬＥＤチップ４が搭載され、第２のリードフレーム２には、ボンディングワイヤ５が取り付けられている。また、ＬＥＤチップ４の周囲はエポキシ樹脂６で保護、封止されている。 A typical semiconductor light emitting device has a structure as shown in FIG.
In FIG. 8, a resin portion 3 is formed by insert molding or the like so as to fix the first lead frame 1 and the second lead frame 2, and the LED chip 4 is formed on the first lead frame 1 by Ag paste 7. And a bonding wire 5 is attached to the second lead frame 2. The periphery of the LED chip 4 is protected and sealed with an epoxy resin 6.

次に、図８の半導体発光装置の製造方法を以下に述べる。
まず、第１のリードフレーム１および第２のリードフレーム２を指定パターン形状に形成し、ボンデイングＡｇメッキを施した状態で樹脂部３内にインサート成型する。その後、第１のリードフレーム１上に、Ａｇペースト７によりＬＥＤチップ４を搭載し、第２のリードフレーム２に、ボンディングワイヤ５を取り付けることによって、リードフレームを電気的および機械的に接続し、エポキシ樹脂６で封止する。ここで、リードフレームの表面がＡｇめっきの状態では錆等が発生し、はんだ付けを阻害するので、リードフレーム部にはんだめっき等の外装めっきを施す。そして、不要部分のリードをカットし、コの字型に折り曲げ、実装基板と接合するための端子部を形成する。 Next, a method for manufacturing the semiconductor light emitting device of FIG. 8 will be described below.
First, the first lead frame 1 and the second lead frame 2 are formed in a specified pattern shape, and are insert-molded in the resin portion 3 in a state where bonding Ag plating is applied. Thereafter, the LED chip 4 is mounted on the first lead frame 1 with the Ag paste 7, and the bonding wire 5 is attached to the second lead frame 2 to electrically and mechanically connect the lead frame, Seal with epoxy resin 6. Here, when the surface of the lead frame is Ag-plated, rust or the like is generated and the soldering is hindered. Therefore, exterior plating such as solder plating is applied to the lead frame portion. Then, unnecessary leads are cut, bent into a U-shape, and a terminal portion for joining to the mounting substrate is formed.

ところで、搭載されているＬＥＤチップが発光する際には熱が発生するが、ＬＥＤチップに流れる電流が大きいほど、熱の発生量が大きくなる。また一般的に、ＬＥＤチップの温度が高くなるほど、ＬＥＤチップの発光効率は下がり、また光劣化が著しくなる。すなわち、大きな電流を流しても効果的に明るくならなくなり、またＬＥＤチップの寿命が短くなる。   By the way, heat is generated when the mounted LED chip emits light, but the amount of heat generated increases as the current flowing through the LED chip increases. In general, the higher the temperature of the LED chip, the lower the luminous efficiency of the LED chip, and the more the light deterioration becomes. That is, even if a large current is passed, it will not be bright effectively, and the life of the LED chip will be shortened.

そこで、ＬＥＤチップから発生する熱を効果的に外部へ逃がし、その温度を下げることにより、高電流でも発光効率の良好な、また、寿命特性の良好なＬＥＤチップを提供することができる。   Therefore, by effectively releasing the heat generated from the LED chip to the outside and lowering the temperature, it is possible to provide an LED chip with good luminous efficiency and good life characteristics even at high currents.

上記のような、放熱効果の向上が図られた従来の半導体発光装置については、たとえば、特開平１１−４６０１８号公報（従来例１）、特開２００２−２２２９９８号公報（従来例２）、特開２０００−５８９２４号公報（従来例３）、特開２０００−７７７２５号公報（従来例４）、特開２０００−２１６４４３号公報（従来例５）などに記載されている。   With respect to the conventional semiconductor light emitting device in which the heat dissipation effect is improved as described above, for example, JP-A-11-46018 (conventional example 1), JP-A-2002-222998 (conventional example 2), JP-A-2000-58924 (conventional example 3), JP-A 2000-77725 (conventional example 4), JP-A 2000-216443 (conventional example 5), and the like.

従来例１および従来例２においては、リードフレームの表面積を大きくすることで、また、従来例３、従来例４および従来例５においては、基板の材質を樹脂よりも熱伝導性の大きい金属とすることで放熱性の向上を図っている。
特開平１１−４６０１８号公報 特開２００２−２２２９９８号公報 特開２０００−５８９２４号公報 特開２０００−７７７２５号公報 特開２０００−２１６４４３号公報 In the conventional example 1 and the conventional example 2, the surface area of the lead frame is increased, and in the conventional example 3, the conventional example 4 and the conventional example 5, the substrate is made of a metal having higher thermal conductivity than the resin. By doing so, heat dissipation is improved.
Japanese Patent Laid-Open No. 11-46018 JP 2002-222998 A JP 2000-58924 A JP 2000-77725 A JP 2000-216443 A

しかしながら、従来例１や従来例２のように、リードフレームの形状を非直線状としたり、厚みを大きくするなどして、ＬＥＤ素子側のリードフレームの表面積を大きくしたとしても、限られたパッケージサイズの中では限界があり、形状変化のみによってリードフレームの表面積を十分に増加させることはできない。したがって、十分な放熱効果の向上を図ることはできない。   However, even if the surface area of the lead frame on the LED element side is increased by making the shape of the lead frame non-linear or increasing the thickness as in Conventional Example 1 or Conventional Example 2, the package is limited. There is a limit in size, and the surface area of the lead frame cannot be sufficiently increased only by the shape change. Therefore, it is not possible to sufficiently improve the heat dissipation effect.

また、リードフレームは、後工程で折り曲げを行なうため、厚くすると曲げ加工ができない。さらに、リードフレームの厚みを大きくするほど、厚みが小さいフレームと比較して、板材から該リードフレームを打ち抜く際に大きな力を要する。このため、金型の強度確保のため該金型の厚みを増す必要があり、必然的に打ち抜き部、すなわちリードフレーム間の隙間が広くなることになる。（一般的には該リードフレームの厚みと同じ、もしくは厚みの３／４程度以上の隙間が必要となる。）リードフレーム間の隙間が広がった結果、ボンデイング面積が確保できない、またはフレーム面積が小さくなる、という問題が生じる。   In addition, since the lead frame is bent in a later process, the lead frame cannot be bent when it is thickened. Furthermore, as the thickness of the lead frame is increased, a larger force is required for punching the lead frame from the plate material as compared with a frame having a small thickness. For this reason, it is necessary to increase the thickness of the die in order to ensure the strength of the die, and the gap between the punched portions, that is, the lead frames is inevitably widened. (Generally, a gap equal to or more than about 3/4 of the thickness of the lead frame is required.) As a result of the wide gap between the lead frames, a bonding area cannot be secured or the frame area is small. Problem arises.

上記の放熱効果に関する他の対策として、ＬＥＤ素子側のリードフレーム端子と実装基板との接触面を大きくするというものもあるが、放熱としては効果があるものの、はんだ付け時の熱がＬＥＤ素子へ伝わりやすくなり、信頼性に悪影響を及ぼす恐れがある。   As another measure for the above heat dissipation effect, there is a method of increasing the contact surface between the lead frame terminal on the LED element side and the mounting substrate, but although it is effective for heat dissipation, the heat at the time of soldering to the LED element It is easy to communicate and may adversely affect reliability.

また、従来例３、従来例４および従来例５のように、樹脂よりも熱伝導性の大きい金属を基板として用いた場合も、上記と同様に、はんだ付け時の熱により、ＬＥＤ素子の信頼性に悪影響を及ぼす恐れがある。   In addition, as in the conventional example 3, the conventional example 4 and the conventional example 5, when a metal having a higher thermal conductivity than the resin is used as the substrate, the reliability of the LED element is also affected by the heat during soldering as described above. May adversely affect sex.

本発明は、このような事情に鑑みてなされたものであり、リードフレームの加工性およびＬＥＤチップの信頼性を低下させることなく、放熱性が高く、発光効率および寿命特性の良好な半導体発光装置を提供することを目的としている。   The present invention has been made in view of such circumstances, and does not reduce the workability of the lead frame and the reliability of the LED chip, and has a high heat dissipation property and good light emission efficiency and lifetime characteristics. The purpose is to provide.

本発明に係る半導体発光装置は、ＬＥＤチップと、ＬＥＤチップを搭載する金属体と、リードフレームと、金属体の周囲を囲み、リードフレームを固定する第１の樹脂部と、ＬＥＤチップを保護する第２の樹脂部とを備え、金属体は、その下部が、実装基板と近接あるいは接するよう、第１の樹脂部より露出し、さらに、リードフレームの下部にまで延びるように形成される。   A semiconductor light emitting device according to the present invention protects an LED chip, a metal body on which the LED chip is mounted, a lead frame, a first resin portion that surrounds the metal body and fixes the lead frame, and the LED chip. The metal body is formed such that the lower portion of the metal body is exposed from the first resin portion so as to be close to or in contact with the mounting substrate, and further extends to the lower portion of the lead frame.

１つの実施態様では、上記半導体発光装置は、金属体と電気的に接続され、第１の樹脂部により固定される他のリードフレームをさらに備える。   In one embodiment, the semiconductor light emitting device further includes another lead frame that is electrically connected to the metal body and is fixed by the first resin portion.

１つの実施態様では、上記半導体発光装置において、第１の樹脂部は、ＬＥＤチップの周囲を囲み、該ＬＥＤチップからの光を反射させる。   In one embodiment, in the semiconductor light emitting device, the first resin portion surrounds the LED chip and reflects light from the LED chip.

１つの実施態様では、上記半導体発光装置において、金属体の頂部は逆円錐形状を有する。   In one embodiment, in the semiconductor light emitting device, the top of the metal body has an inverted conical shape.

１つの実施態様では、上記半導体発光装置において、金属体の頂部は逆四角錐形状を有する。   In one embodiment, in the semiconductor light emitting device, the top of the metal body has an inverted quadrangular pyramid shape.

本発明の半導体発光装置およびその製造方法によれば、ＬＥＤチップで発生した熱を、リードフレームの下部の金属体を通じて実装基板に放熱することができるので、リードフレームを厚くする必要がない。したがって、リードフレームの加工性の低下を阻止できる。また、はんだ付け時の熱がＬＥＤに伝わりやすくなることもない。よって、リードフレームの加工性およびＬＥＤチップの信頼性を低下させることなく、放熱性の優れた半導体発光装置を提供することが可能となる。   According to the semiconductor light emitting device and the manufacturing method thereof of the present invention, the heat generated in the LED chip can be radiated to the mounting substrate through the metal body below the lead frame, so that it is not necessary to make the lead frame thick. Therefore, it is possible to prevent a decrease in workability of the lead frame. Further, heat during soldering is not easily transmitted to the LED. Therefore, it is possible to provide a semiconductor light emitting device with excellent heat dissipation without reducing the workability of the lead frame and the reliability of the LED chip.

以下に本発明に基づく半導体発光装置およびその製造方法の実施の形態について説明する。   Embodiments of a semiconductor light emitting device and a method for manufacturing the same according to the present invention will be described below.

まず、半導体発光装置の発明に関する実施の形態について、図１から図４を用いて説明する。   First, an embodiment relating to the invention of a semiconductor light emitting device will be described with reference to FIGS.

なお、以下に述べる実施の形態１から実施の形態５までにおいて、搭載されるＬＥＤチップ４は複数であることが好ましい。これにより、本実施の形態における半導体発光装置のフルカラー表示等の製品への適用性を高めることができる。１製品内に複数個のＬＥＤチップを搭載する場合は、発熱量が大きいため、放熱性がかなり重要な問題となるので、本実施の形態において大きな効果が期待できる。   In the first to fifth embodiments described below, a plurality of LED chips 4 are preferably mounted. As a result, the applicability of the semiconductor light emitting device in this embodiment to a product such as full color display can be enhanced. When a plurality of LED chips are mounted in one product, the amount of heat generated is large, so heat dissipation becomes a very important problem, and thus a great effect can be expected in this embodiment.

図１は実施の形態１における表面実装型ＬＥＤの断面図である。
本実施の形態における半導体発光装置は、ＬＥＤチップ４と、ＬＥＤチップ４を搭載する第１のリードフレーム１と、金線などのボンディングワイヤ５を介してＬＥＤチップ４と電気的に接続される第２のリードフレーム２と、ＬＥＤチップ４の周囲を囲み、リードフレームを固定する樹脂部３とを備え、第１のリードフレーム１の下部に金属体８を有する。 FIG. 1 is a cross-sectional view of the surface-mounted LED in the first embodiment.
The semiconductor light emitting device in the present embodiment is electrically connected to the LED chip 4 via the LED chip 4, the first lead frame 1 on which the LED chip 4 is mounted, and a bonding wire 5 such as a gold wire. 2 and the resin part 3 which surrounds the periphery of the LED chip 4 and fixes the lead frame, and has a metal body 8 below the first lead frame 1.

第１および第２のリードフレーム１，２は、樹脂部３内にインサート成型されている。第１のリードフレーム１上には、Ａｇペースト７を介してＬＥＤチップ４が搭載され、第２のリードフレーム２に、ボンディングワイヤ５を取り付けることによって、第２のリードフレーム２をＬＥＤチップ４と機械的および電気的に接続し、その周囲を囲むように樹脂部３が形成されている。樹脂部３により囲まれた内側は、ＬＥＤ素子部を保護するため、エポキシ樹脂６で封止されている。   The first and second lead frames 1 and 2 are insert-molded in the resin portion 3. An LED chip 4 is mounted on the first lead frame 1 via an Ag paste 7, and a bonding wire 5 is attached to the second lead frame 2 so that the second lead frame 2 is connected to the LED chip 4. A resin portion 3 is formed so as to be mechanically and electrically connected and to surround the periphery. The inner side surrounded by the resin part 3 is sealed with an epoxy resin 6 in order to protect the LED element part.

金属体８は、基板として機能する樹脂部３に保持され、その下部は、実装基板と近接あるいは接するよう、樹脂部３より露出している。また、金属体８はブロック状であり、第１および第２のリードフレーム１，２に樹脂部３を介して狭持されている。   The metal body 8 is held by the resin portion 3 that functions as a substrate, and the lower portion thereof is exposed from the resin portion 3 so as to be close to or in contact with the mounting substrate. The metal body 8 has a block shape and is sandwiched between the first and second lead frames 1 and 2 via the resin portion 3.

ここで、金属体８は、第１および第２のリードフレーム１，２とは離間していることが好ましい。   Here, it is preferable that the metal body 8 is separated from the first and second lead frames 1 and 2.

第１および第２のリードフレーム１，２と金属体８との間に隙間を設けてあるのは、両者が接することにより、第１および第２のリードフレーム１，２に分離形成しているパターンがショートすることを防ぐためである。本実施の形態においては、ＬＥＤチップ４より出た熱は、第１のリードフレーム１、第１のリードフレーム１と金属体８間の隙間、金属体８の順で伝わり、実装基板に放熱される。ＬＥＤチップ４で発生した熱を効率よく金属体８に伝えるためには、上記隙間は可能な限り小さい方が好ましい。また、金属体８はパッケージ内で可能な限り体積を大きくとることが好ましい。   A gap is provided between the first and second lead frames 1 and 2 and the metal body 8 because the first and second lead frames 1 and 2 are separated from each other by contacting each other. This is to prevent the pattern from being short-circuited. In the present embodiment, the heat generated from the LED chip 4 is transmitted in the order of the first lead frame 1, the gap between the first lead frame 1 and the metal body 8, and the metal body 8, and is radiated to the mounting substrate. The In order to efficiently transmit the heat generated in the LED chip 4 to the metal body 8, the gap is preferably as small as possible. Further, it is preferable that the volume of the metal body 8 is as large as possible in the package.

ここで、金属体８は、Ｃｕ、アルミニウム、Ｃｕ合金およびアルミニウム合金からなる群から選ばれる少なくとも１種の材質を含むことが好ましい。これは、これらの金属の放熱性が高いため、より放熱性の向上が図られるからであるが、金属体８として放熱性の高い材料を使うという意味では、他の金属材料や、たとえばセラミックなど金属以外の材料であっても問題ない。なお、セラミックを使用する場合、熱電導性は金属材料より劣るが、セラミック材料自体が絶縁性であるので、表面に絶縁処理を施すことなく、金属体８に代わる該セラミック体を第１，第２のリードフレーム１，２と接触させることが可能である。   Here, it is preferable that the metal body 8 includes at least one material selected from the group consisting of Cu, aluminum, a Cu alloy, and an aluminum alloy. This is because the heat dissipation of these metals is high, so that the heat dissipation is further improved. However, in the sense that a material having a high heat dissipation is used as the metal body 8, other metal materials such as ceramics are used. There is no problem even if it is a material other than metal. When ceramic is used, the thermal conductivity is inferior to that of the metal material. However, since the ceramic material itself is insulative, the ceramic body in place of the metal body 8 can be replaced with the first and first ceramic bodies without performing insulation treatment on the surface. 2 lead frames 1 and 2 can be brought into contact with each other.

なお、ＬＥＤチップ４の周囲に位置する樹脂部３はＬＥＤチップ４からの出射光を効率よく反射させるため、反射率の高い白色の樹脂を使用し、また効率よく前面に出射するために、内周面形状がたとえば逆円錐形状となるように成型される。また、本実施の形態における半導体発光装置は、表面実装部品として後工程へ流すため、樹脂部３には耐熱性の優れた樹脂が使用される。具体的には両者を満たす、たとえば液晶ポリマー、ポリアミド系樹脂等が使用される。なお、発光面積を大きく取りたい場合は、樹脂部３の内周面形状を逆円錐以外の形状、たとえば逆四角錐形状とする場合もある。   The resin portion 3 located around the LED chip 4 uses a white resin having a high reflectivity in order to efficiently reflect the light emitted from the LED chip 4, and in order to efficiently emit the light to the front surface, The peripheral surface shape is molded to be, for example, an inverted conical shape. In addition, since the semiconductor light emitting device in the present embodiment is flowed to the subsequent process as a surface mounting component, a resin having excellent heat resistance is used for the resin portion 3. Specifically, for example, a liquid crystal polymer, a polyamide resin, or the like that satisfies both is used. When it is desired to increase the light emitting area, the inner peripheral surface shape of the resin part 3 may be a shape other than the inverted cone, for example, an inverted quadrangular pyramid shape.

エポキシ樹脂６はＬＥＤ素子部を保護するための樹脂であり、主にポッテイング方式で注型され、透明または乳白色の樹脂が使用されるが、トランスファー成型、インジェクション成型等でも形成は可能である。この場合は発光部を任意の形状（レンズ形状等）にすることも可能である。   The epoxy resin 6 is a resin for protecting the LED element portion, and is mainly cast by a potting method, and a transparent or milky white resin is used. However, the epoxy resin 6 can also be formed by transfer molding, injection molding, or the like. In this case, it is possible to make the light emitting portion have an arbitrary shape (lens shape or the like).

ここで、金属体８は、平面的に樹脂部３の中心付近にあるため、実装基板へのはんだ付けの際の熱を直接うけることはなく、よって、はんだ付け時の際の熱により、ＬＥＤチップの信頼性が低下することはない。   Here, since the metal body 8 is in the vicinity of the center of the resin portion 3 in a plan view, the metal body 8 is not directly subjected to heat at the time of soldering to the mounting board. Chip reliability is not reduced.

本実施の形態においては、以上の構成および作用により、非常に簡便に、従来の半導体発光装置と比べて、放熱性の向上を図ることができる。   In the present embodiment, with the above configuration and operation, the heat dissipation can be improved very simply as compared with the conventional semiconductor light emitting device.

図２は実施の形態２における表面実装型ＬＥＤの断面図である。
本実施の形態における半導体発光装置は、実施の形態１における半導体発光装置の変更例の１つであり、上記の金属体８を第１のリードフレーム１と接触させている。 FIG. 2 is a cross-sectional view of the surface-mounted LED in the second embodiment.
The semiconductor light emitting device in the present embodiment is one of the modifications of the semiconductor light emitting device in the first embodiment, and the metal body 8 is in contact with the first lead frame 1.

たとえば、ＬＥＤチップが搭載される第１のリードフレーム１を、第２のリードフレーム２よりも低くし、金属体８と接触させる。図２の例では、第１のリードフレーム１を屈曲させて、金属体８と接触させている。   For example, the first lead frame 1 on which the LED chip is mounted is made lower than the second lead frame 2 and brought into contact with the metal body 8. In the example of FIG. 2, the first lead frame 1 is bent and brought into contact with the metal body 8.

これにより、ＬＥＤチップ４より出た熱は、第１のリードフレーム１、金属体８、実装基板の順で伝わる。実施の形態１における第１のリードフレーム１と金属体８間の隙間に相当する部分がなく、ＬＥＤチップ４で発生した熱をさらに効率よく実装基板に逃がすことができる。なお、本実施の形態では、第１のリードフレーム１を下げて金属体８と接触させているが、第１のリードフレーム１はそのままで、金属体８の上面に凸部を設けるなどして、金属体８の形状を変更させても、同様の目的を果たすことができる。   Thereby, the heat generated from the LED chip 4 is transmitted in the order of the first lead frame 1, the metal body 8, and the mounting substrate. There is no portion corresponding to the gap between the first lead frame 1 and the metal body 8 in the first embodiment, and the heat generated in the LED chip 4 can be released to the mounting substrate more efficiently. In the present embodiment, the first lead frame 1 is lowered and brought into contact with the metal body 8. However, the first lead frame 1 is left as it is, and a convex portion is provided on the upper surface of the metal body 8. Even if the shape of the metal body 8 is changed, the same purpose can be achieved.

本実施の形態においては、以上の構成および作用により、実施の形態１と比べて、より大きな放熱性の向上を図ることができる。   In the present embodiment, the heat dissipation can be further improved by the above configuration and operation as compared with the first embodiment.

図３は実施の形態３における表面実装型ＬＥＤの断面図である。
本実施の形態における半導体発光装置は、実施の形態１における半導体発光装置の変更例の１つであり、上記の金属体８表面に、たとえば絶縁フィルム等貼付、または絶縁塗料等塗布、または陽極酸化等による電気的絶縁処理部９が設けられ、絶縁処理が施された金属体８の表面が第１および第２のリードフレーム１，２と接触する。 FIG. 3 is a cross-sectional view of the surface-mounted LED in the third embodiment.
The semiconductor light emitting device in the present embodiment is one example of a modification of the semiconductor light emitting device in the first embodiment. For example, an insulating film or the like is applied to the surface of the metal body 8 or an insulating paint is applied or anodized. An electrical insulation processing unit 9 is provided, and the surface of the metal body 8 subjected to the insulation treatment is in contact with the first and second lead frames 1 and 2.

実施の形態２においては、半導体発光装置上にＬＥＤチップ４が１つしかない場合、あるいは複数存在しても、同一のリードフレーム上にある場合には、全てのＬＥＤチップ４から発生する熱を、実施の形態１における第１のリードフレーム１と金属体８間の隙間に相当する部分を介することなく実装基板に伝えることができる。   In the second embodiment, when there is only one LED chip 4 on the semiconductor light emitting device, or when there are a plurality of LED chips 4 on the same lead frame, heat generated from all the LED chips 4 is generated. In addition, it can be transmitted to the mounting substrate without passing through a portion corresponding to the gap between the first lead frame 1 and the metal body 8 in the first embodiment.

しかしながら、複数のＬＥＤチップ４が異なるリードフレーム上に存在する場合、各々のリードフレームに分離形成しているパターンがショートすることを防ぐため、それらのリードフレームのうち、１個しか金属体８に接触させることができず、結果として、放熱性の向上が制限されるパターン部が生じることとなる。   However, when a plurality of LED chips 4 are present on different lead frames, only one of the lead frames is attached to the metal body 8 in order to prevent a pattern formed separately on each lead frame from short-circuiting. As a result, a pattern portion in which improvement in heat dissipation is limited is generated.

本実施の形態は、実施の形態２と意図する目的は同じであるが、金属体８に電気的絶縁処理部９を設けることにより、全てのリードフレームのパターンが金属体８に接触していてもショートせず、全てのパターン部に高い放熱効果を持たせることができる点が異なっている。   Although the intended purpose of the present embodiment is the same as that of the second embodiment, all the lead frame patterns are in contact with the metal body 8 by providing the metal body 8 with the electrical insulation processing portion 9. However, it is different in that all the pattern portions can have a high heat dissipation effect without being short-circuited.

本実施の形態においては、複数のＬＥＤチップ４が異なるリードフレーム上に存在する場合でも、容易に放熱性の向上が可能で、またＬＥＤチップ４より出た熱は第１のリードフレーム１、金属体８、実装基板の順のルートとは別に、金属体８に入った熱を、さらに第２のリードフレーム２を介して、実装基板へ逃がす効果も期待できる。   In the present embodiment, even when a plurality of LED chips 4 are present on different lead frames, the heat dissipation can be easily improved, and the heat generated from the LED chips 4 is generated by the first lead frame 1 and the metal. In addition to the route of the body 8 and the mounting board in this order, it is also possible to expect the effect that the heat that has entered the metal body 8 is further released to the mounting board through the second lead frame 2.

図４は実施の形態４における表面実装型ＬＥＤの断面図である。
本実施の形態における半導体発光装置は、ＬＥＤチップ４と、ＬＥＤチップ４を搭載する金属体８と、金属体８と電気的に接続される第１のリードフレーム１と、ボンディングワイヤ５を介してＬＥＤチップと電気的に接続される第２のリードフレーム２と、金属体８およびＬＥＤチップ４の周囲を囲み、第１および第２のリードフレームを固定する樹脂部３とを有する。 FIG. 4 is a cross-sectional view of the surface-mounted LED in the fourth embodiment.
The semiconductor light emitting device in the present embodiment includes an LED chip 4, a metal body 8 on which the LED chip 4 is mounted, a first lead frame 1 electrically connected to the metal body 8, and a bonding wire 5. It has the 2nd lead frame 2 electrically connected with an LED chip, and the resin part 3 which surrounds the circumference | surroundings of the metal body 8 and the LED chip 4, and fixes a 1st and 2nd lead frame.

本実施の形態においては、金属体８に直接ＬＥＤチップ４を搭載していることで、ＬＥＤチップ４から発生した熱は、金属体８に直接伝わり、該金属体８を介して実装基板に伝えることができるので、実施の形態１から実施の形態３よりもさらに効率よく熱を逃がすことができる。   In the present embodiment, since the LED chip 4 is mounted directly on the metal body 8, the heat generated from the LED chip 4 is directly transmitted to the metal body 8 and is transmitted to the mounting substrate via the metal body 8. Therefore, heat can be released more efficiently than the first to third embodiments.

図５は実施の形態５における表面実装型ＬＥＤの断面図である。
本実施の形態においては、金属体８の頂部は逆円錐形状に加工され、該頂部は第１のリードフレーム１に嵌入されている。また、金属体８と第１のリードフレーム１とをかしめることにより両者は一体化されており、かしめる工程を行なうと同時に金属体８の頂部を逆円錐形状に加工する。これにより、金属体８と第１のリードフレーム１とは強固に固定される。また、逆円錐形状の反射効果により半導体発光装置の光度アップを図ることができる。なお、金属体８頂部の形状は、上記の逆円錐以外の形状、たとえば逆四角錐などの形状としてもよい。 FIG. 5 is a cross-sectional view of the surface-mounted LED in the fifth embodiment.
In the present embodiment, the top portion of the metal body 8 is processed into an inverted conical shape, and the top portion is fitted into the first lead frame 1. Further, the metal body 8 and the first lead frame 1 are caulked to be integrated, and at the same time as the caulking process, the top of the metal body 8 is processed into an inverted conical shape. Thereby, the metal body 8 and the first lead frame 1 are firmly fixed. Further, the luminous intensity of the semiconductor light emitting device can be increased by the inverted conical reflection effect. Note that the shape of the top of the metal body 8 may be a shape other than the above-described inverted cone, for example, an inverted quadrangular pyramid.

次に、金属体８の樹脂部３への固定に関する実施の形態について、図６および図７を用いて説明する。   Next, an embodiment relating to the fixing of the metal body 8 to the resin portion 3 will be described with reference to FIGS. 6 and 7.

図６（ａ），（ｂ）は実施の形態６におけるＬＥＤを搭載する基板の製造方法を示した図である。   6 (a) and 6 (b) are diagrams showing a method of manufacturing a substrate on which the LED according to the sixth embodiment is mounted.

本実施の形態における、ＬＥＤを搭載する基板の製造方法は、インサート成型により、金属体としての金属体８と、リードフレーム１０とを保持する樹脂部３を形成する工程と、金属体８あるいはリードフレーム１０上にＬＥＤチップ４を搭載する工程を備える。図６（ａ），（ｂ）では、リードフレーム１０上にＬＥＤチップ４を搭載する例を示している。   In the present embodiment, the method for manufacturing the substrate on which the LED is mounted includes the step of forming the metal part 8 as the metal body and the resin part 3 holding the lead frame 10 by insert molding, the metal body 8 or the lead. A step of mounting the LED chip 4 on the frame 10 is provided. 6A and 6B show an example in which the LED chip 4 is mounted on the lead frame 10.

図６（ａ）に示す通り、インサート成型金型１１にリードフレーム１０と金属体８を略同時にセットしインサート成型を行なう。それにより図６（ｂ）に示すように、リードフレーム１０と金属体８を一体化するように樹脂部３を形成することができる。その後、一方のリードフレーム１０上に、Ａｇペーストを用いてＬＥＤチップ４を実装し、ボンディングワイヤを介して他方のリードフレームとＬＥＤチップ４とを接続する。   As shown in FIG. 6A, the lead frame 10 and the metal body 8 are set almost simultaneously in the insert molding die 11 and insert molding is performed. Thereby, as shown in FIG. 6B, the resin portion 3 can be formed so that the lead frame 10 and the metal body 8 are integrated. Thereafter, the LED chip 4 is mounted on one lead frame 10 using Ag paste, and the other lead frame and the LED chip 4 are connected via bonding wires.

図７は実施の形態７におけるＬＥＤを搭載する基板の製造方法を示した図である。
本実施の形態における、ＬＥＤを搭載する基板の製造方法は、インサート成型により、リードフレーム１０を保持し、凹部１３を有する樹脂部３を形成する工程と、凹部１３に金属体としての金属体８を装着する工程と、金属体８あるいはリードフレーム１０上にＬＥＤチップ４を搭載する工程を備える。 FIG. 7 is a diagram showing a method for manufacturing a substrate on which an LED is mounted in the seventh embodiment.
In the present embodiment, the method of manufacturing the substrate on which the LED is mounted includes the step of holding the lead frame 10 and forming the resin portion 3 having the recess 13 by insert molding, and the metal body 8 as a metal body in the recess 13. And a step of mounting the LED chip 4 on the metal body 8 or the lead frame 10.

図７（ａ）に示す通り、金属体挿入部形成用金型１２を有するインサート成型金型１１に、リードフレーム１０をセットしインサート成型を行なう。それにより、図７（ｂ）に示すように、リードフレーム１０を保持し凹部１３を有する樹脂部３を形成することができる。次に、図７（ｃ）に示すように、上記成型後の樹脂部３における凹部１３に、金属体８を挿入し、接着剤などを用いて固定する。その後は、実施の形態６と同様の工程を経て、ＬＥＤチップ４を一方のリードフレーム上に実装し、ボンディングワイヤを介して他方のリードフレームとＬＥＤチップ４とを接続する。   As shown in FIG. 7A, a lead frame 10 is set in an insert molding die 11 having a metal body insertion portion forming die 12, and insert molding is performed. Thereby, as shown in FIG. 7B, the resin portion 3 that holds the lead frame 10 and has the recess 13 can be formed. Next, as shown in FIG.7 (c), the metal body 8 is inserted in the recessed part 13 in the resin part 3 after the said shaping | molding, and it fixes using an adhesive agent. Thereafter, through the same process as in the sixth embodiment, the LED chip 4 is mounted on one lead frame, and the other lead frame and the LED chip 4 are connected via a bonding wire.

以上、本発明の実施の形態について説明したが、今回開示された実施の形態は全ての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内での全ての変更が含まれることが意図される。   Although the embodiments of the present invention have been described above, the embodiments disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

本発明の実施の形態１に係る表面実装型ＬＥＤの断面図である。It is sectional drawing of the surface mount type LED which concerns on Embodiment 1 of this invention. 本発明の実施の形態２に係る表面実装型ＬＥＤの断面図である。It is sectional drawing of surface mount type LED which concerns on Embodiment 2 of this invention. 本発明の実施の形態３に係る表面実装型ＬＥＤの断面図である。It is sectional drawing of surface mount type LED which concerns on Embodiment 3 of this invention. 本発明の実施の形態４に係る表面実装型ＬＥＤの断面図である。It is sectional drawing of surface mount type LED which concerns on Embodiment 4 of this invention. 本発明の実施の形態５に係る表面実装型ＬＥＤの断面図である。It is sectional drawing of surface mount type LED which concerns on Embodiment 5 of this invention. 本発明の実施の形態６におけるＬＥＤを搭載する基板の製造方法を示した図であり、（ａ）はリードフレームと金属体をインサート成型金型にセットした図であり、（ｂ）はリードフレームと金属体のインサート成型が完了した後の樹脂部を示す図である。It is the figure which showed the manufacturing method of the board | substrate which mounts LED in Embodiment 6 of this invention, (a) is the figure which set the lead frame and the metal body to the insert molding die, (b) is the lead frame. It is a figure which shows the resin part after the insert molding of a metal body is completed. 本発明の実施の形態７におけるＬＥＤを搭載する基板の製造方法を示した図であり、（ａ）はリードフレームをインサート成型金型にセットした図であり、（ｂ）はリードフレームのインサート成型が完了した後の樹脂部を示す図であり、（ｃ）は樹脂部の凹部に金属体を挿入した状態を示す図である。It is the figure which showed the manufacturing method of the board | substrate which mounts LED in Embodiment 7 of this invention, (a) is the figure which set the lead frame to the insert molding metal mold | die, (b) is the insert molding of a lead frame. It is a figure which shows the resin part after completion | finish, and (c) is a figure which shows the state which inserted the metal body in the recessed part of the resin part. 従来の代表的な半導体発光装置の断面図である。It is sectional drawing of the conventional typical semiconductor light-emitting device.

符号の説明Explanation of symbols

１ 第１のリードフレーム、２ 第２のリードフレーム、３ 樹脂部、４ ＬＥＤチップ、５ ボンディングワイヤ、６ エポキシ樹脂、７ Ａｇペースト、８ 金属体、９ 電気的絶縁処理部、１０ リードフレーム、１１ インサート成型金型、１２ 金属体挿入部形成用金型、１３ 凹部。   DESCRIPTION OF SYMBOLS 1 1st lead frame, 2nd 2nd lead frame, 3 resin part, 4 LED chip, 5 bonding wire, 6 epoxy resin, 7 Ag paste, 8 metal body, 9 electrical insulation processing part, 10 lead frame, 11 Insert molding die, 12 metal body insertion part forming die, 13 recess.

Claims (5)

ＬＥＤチップと、
前記ＬＥＤチップを搭載する金属体と、
リードフレームと、
前記金属体の周囲を囲み、前記リードフレームを固定する第１の樹脂部と、
前記ＬＥＤチップを保護する第２の樹脂部とを備え、
前記金属体は、その下部が、実装基板と近接あるいは接するよう、前記第１の樹脂部より露出し、さらに、前記リードフレームの下部にまで延びるように形成される、半導体発光装置。 An LED chip;
A metal body on which the LED chip is mounted;
A lead frame,
A first resin portion surrounding the metal body and fixing the lead frame;
A second resin part for protecting the LED chip,
The semiconductor light emitting device, wherein the metal body is formed such that a lower portion thereof is exposed from the first resin portion so as to be close to or in contact with a mounting substrate and further extends to a lower portion of the lead frame. 前記金属体と電気的に接続され、前記第１の樹脂部により固定される他のリードフレームをさらに備えた、請求項１に記載の半導体発光装置。   The semiconductor light-emitting device according to claim 1, further comprising another lead frame electrically connected to the metal body and fixed by the first resin portion. 前記第１の樹脂部は、前記ＬＥＤチップの周囲を囲み、該ＬＥＤチップからの光を反射させることを特徴とする、請求項１または請求項２に記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein the first resin portion surrounds the LED chip and reflects light from the LED chip. 前記金属体の頂部は逆円錐形状を有する、請求項１から請求項３のいずれかに記載の半導体発光装置。   The semiconductor light-emitting device according to claim 1, wherein a top portion of the metal body has an inverted conical shape. 前記金属体の頂部は逆四角錐形状を有する、請求項１から請求項３のいずれかに記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein a top portion of the metal body has an inverted quadrangular pyramid shape.
JP2007239333A 2007-09-14 2007-09-14 Semiconductor light-emitting apparatus Withdrawn JP2007329516A (en)

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US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US11791442B2 (en) 2007-10-31 2023-10-17 Creeled, Inc. Light emitting diode package and method for fabricating same
US10892383B2 (en) 2007-10-31 2021-01-12 Cree, Inc. Light emitting diode package and method for fabricating same
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US9276184B2 (en) 2008-07-23 2016-03-01 Rohm Co., Ltd. LED module
US8860066B2 (en) 2008-07-23 2014-10-14 Rohm Co., Ltd. LED module
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US10439116B2 (en) 2008-07-23 2019-10-08 Rohm Co., Ltd. LED module
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
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US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
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