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JP2007227675A - Light source apparatus - Google Patents

Light source apparatus Download PDF

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Publication number
JP2007227675A
JP2007227675A JP2006047416A JP2006047416A JP2007227675A JP 2007227675 A JP2007227675 A JP 2007227675A JP 2006047416 A JP2006047416 A JP 2006047416A JP 2006047416 A JP2006047416 A JP 2006047416A JP 2007227675 A JP2007227675 A JP 2007227675A
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Japan
Prior art keywords
light
emitting diode
diode chip
chip
led chip
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JP2006047416A
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Japanese (ja)
Inventor
Takanori Akeda
孝典 明田
Kazunari Kuzuhara
一功 葛原
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light source apparatus wherein, even if the same mounting area as the mounting area for mounting only one light-emitting diode chip is used, the light extraction efficiency is not reduced in any light-emitting diode chip. <P>SOLUTION: In a first light-emitting diode chip 2, an n-type semiconductor layer and a p-type semiconductor layer 6 are laminated, and one part of the p-type semiconductor layer 6 is removed in a part of surface of the chip 2 opposed to a mounting substrate 9 to form an electrode. A second light-emitting diode chip 3 is so directed that the light therefrom is extracted on the same side as the first light-emitting diode chip 2, and is laminated in the non-light-emitting region A wherein the p-type semiconductor layer 6 is removed on the light extracting surface in the first light-emitting diode chip 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、それぞれ発光色が異なる複数種類の発光ダイオードチップを備え、各発光ダイオードチップからの光を混色させて出力する光源装置に関するものである。   The present invention relates to a light source device that includes a plurality of types of light emitting diode chips each having a different emission color, and that outputs light by mixing light from each light emitting diode chip.

従来からこの種の光源装置として、図４に示すように、それぞれ発光色が異なる複数種類の発光ダイオードチップ（以下、ＬＥＤチップと略称する）１３を基板１４の一面上に並べて配置し、各ＬＥＤチップ１３からの光を混色させて出力するようにしたものが知られている（たとえば特許文献１参照）。ただし、この光源装置では、複数個のＬＥＤチップ１３が一平面上に並べられているので、ＬＥＤチップ１３を１個だけ実装する場合に比べて実装面積が大きくなるという問題がある。   Conventionally, as this type of light source device, as shown in FIG. 4, a plurality of types of light emitting diode chips (hereinafter abbreviated as LED chips) 13 having different emission colors are arranged on one surface of a substrate 14. A device in which light from the chip 13 is mixed and output is known (see, for example, Patent Document 1). However, in this light source device, since a plurality of LED chips 13 are arranged on one plane, there is a problem that a mounting area becomes larger than a case where only one LED chip 13 is mounted.

これに対して、特許文献１には、図５に示すように、基板１４に実装されるＬＥＤチップ１３において光を取出す面上に発光色が異なる別のＬＥＤチップ１３を積み重ね、下層のＬＥＤチップ１３からの光と上層のＬＥＤチップ１３からの光の混色光を出力するようにした光源装置が記載されている。
特開２００３−１９７９６８号公報（第５，７−８頁、図５，８） On the other hand, in Patent Document 1, as shown in FIG. 5, another LED chip 13 having a different emission color is stacked on a surface from which light is extracted in the LED chip 13 mounted on the substrate 14, and the lower LED chip is stacked. A light source device that outputs mixed color light of light from 13 and light from an upper LED chip 13 is described.
Japanese Patent Laid-Open No. 2003-197968 (pages 5 and 7-8, FIGS. 5 and 8)

しかし、図５の光源装置では、下層のＬＥＤチップ１３において光を取出す面の一部に別のＬＥＤチップ１３が積み重ねられているので、下層のＬＥＤチップ１３からの出力光の一部が前記別のＬＥＤチップ１３で妨げられることになり、下層のＬＥＤチップ１３について光の取出効率が低下する。   However, in the light source device of FIG. 5, since another LED chip 13 is stacked on a part of the light extraction surface of the lower LED chip 13, a part of the output light from the lower LED chip 13 is different from the above. Therefore, the light extraction efficiency of the lower LED chip 13 is lowered.

本発明は上記事由に鑑みて為されたものであって、発光ダイオードチップを１個だけ実装する場合と同等の実装面積としながらも、いずれの発光ダイオードチップについても光の取出効率が低下することのない光源装置を提供することを目的とする。   The present invention has been made in view of the above-mentioned reasons, and the light extraction efficiency of any light-emitting diode chip is reduced while the mounting area is the same as when only one light-emitting diode chip is mounted. An object of the present invention is to provide a light source device without any problem.

請求項１の発明では、実装基板上にフリップチップ実装される第１の発光ダイオードチップと、第１の発光ダイオードチップとは発光色が異なる第２の発光ダイオードチップとを備え、第１および第２の両発光ダイオードチップで発生した光の混色光を出力する光源装置であって、第１の発光ダイオードチップは、異種導電型の半導体が積層されており、実装基板との対向面の一部においては前記異種導電型の半導体の一方が除去されて電極が形成されており、第２の発光ダイオードチップは、第１の発光ダイオードチップと同じ側に光を取出す向きに向けられ、第１の発光ダイオードチップにおいて光を取出す面上で前記異種導電型の半導体の一方が除去されている非発光領域内に積み重ねられていることを特徴とする。   According to the first aspect of the present invention, the first light-emitting diode chip flip-chip mounted on the mounting substrate and the second light-emitting diode chip having a light emission color different from that of the first light-emitting diode chip are provided. 2 is a light source device that outputs mixed color light generated by the two light emitting diode chips, wherein the first light emitting diode chip is formed by stacking semiconductors of different conductivity types, and a part of the surface facing the mounting substrate. In which one of the semiconductors of different conductivity type is removed to form an electrode, and the second light emitting diode chip is directed in the direction of extracting light on the same side as the first light emitting diode chip, The light emitting diode chip is characterized in that it is stacked in a non-light emitting region where one of the different conductivity type semiconductors is removed on a surface from which light is extracted.

この構成によれば、第２の発光ダイオードチップは、第１の発光ダイオードチップにおいて光を取出す面上で異種導電型の半導体の一方が除去されている非発光領域内に積み重ねられているので、光源装置全体の実装面積を第１の発光ダイオードチップを１個だけ実装する場合と同等の実装面積としながらも、第２の発光ダイオードチップが第１の発光ダイオードチップの非発光領域内に収まっており、第２の発光ダイオードチップによって第１の発光ダイオードチップの光が妨げられることはない。すなわち、第１および第２のいずれの発光ダイオードチップについても光の取出効率が低下することはない。   According to this configuration, the second light emitting diode chip is stacked in a non-light emitting region where one of the different conductivity type semiconductors is removed on the surface from which light is extracted in the first light emitting diode chip. The mounting area of the entire light source device is the same mounting area as when only one first light emitting diode chip is mounted, but the second light emitting diode chip is within the non-light emitting region of the first light emitting diode chip. In addition, the light of the first light emitting diode chip is not blocked by the second light emitting diode chip. That is, the light extraction efficiency does not decrease for both the first and second light emitting diode chips.

請求項２の発明は、請求項１の発明において、前記第２の発光ダイオードチップが、前記実装基板に対してワイヤボンディングにより接続されていることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the second light emitting diode chip is connected to the mounting substrate by wire bonding.

この構成によれば、第２の発光ダイオードチップを接続するための電極を第１の発光ダイオードチップに設けるというプロセスを必要とせずに、第２の発光ダイオードチップを実装基板に接続することができる。   According to this configuration, the second light emitting diode chip can be connected to the mounting substrate without requiring a process of providing the first light emitting diode chip with an electrode for connecting the second light emitting diode chip. .

請求項３の発明は、請求項１または請求項２の発明において、前記第１および第２の発光ダイオードチップが、前記混色光を白色系の光とするように各々の発光色が設定されていることを特徴とする。   According to a third aspect of the present invention, in the first or second aspect of the present invention, the first and second light emitting diode chips are set to have respective emission colors so that the mixed color light is white light. It is characterized by being.

この構成によれば、第１および第２の両発光ダイオードチップで発生した光を混色することによって白色系の光を実現しているので、各発光ダイオードチップからの光束を調節すれば混色光について演色性を高めたり色温度を変化させたりすることができる。   According to this configuration, white light is realized by mixing the light generated by both the first and second light emitting diode chips. Therefore, if the luminous flux from each light emitting diode chip is adjusted, the mixed color light is obtained. Color rendering properties can be improved and color temperature can be changed.

本発明は、第２の発光ダイオードチップが、第１の発光ダイオードチップにおいて光を取出す面上で異種導電型の半導体の一方が除去されている非発光領域内に積み重ねられているので、光源装置全体の実装面積を第１の発光ダイオードチップを１個だけ実装する場合と同等の実装面積としながらも、第２の発光ダイオードチップが第１の発光ダイオードチップの非発光領域内に収まっており、第２の発光ダイオードチップによって第１の発光ダイオードチップの光が妨げられることはない。すなわち、第１および第２のいずれの発光ダイオードチップについても光の取出効率が低下することはないという利点がある。   In the present invention, the second light emitting diode chip is stacked in a non-light emitting region where one of the semiconductors of different conductivity type is removed on the surface from which light is extracted in the first light emitting diode chip. While the entire mounting area is the same mounting area as when only one first light emitting diode chip is mounted, the second light emitting diode chip is within the non-light emitting region of the first light emitting diode chip, The light of the first light emitting diode chip is not blocked by the second light emitting diode chip. That is, there is an advantage that the light extraction efficiency does not decrease for both the first and second light emitting diode chips.

本実施形態の光源装置１は、図１に示すように、実装基板９上にフリップチップ実装される第１の発光ダイオードチップ（以下、ＬＥＤチップと略称する）２と、第１のＬＥＤチップ２とは発光色が異なる第２のＬＥＤチップ３とを備え、第１および第２の両ＬＥＤチップ２，３で発生した光の混色光を出力するものである。   As shown in FIG. 1, the light source device 1 of the present embodiment includes a first light-emitting diode chip (hereinafter abbreviated as an LED chip) 2 that is flip-chip mounted on a mounting substrate 9, and a first LED chip 2. Includes a second LED chip 3 having a different emission color, and outputs mixed color light generated by both the first and second LED chips 2 and 3.

第１のＬＥＤチップ２は、図２に示すように、矩形状の基板４の一面に対して異種導電型（ここではｎ型とｐ型）の半導体層５，６が、ｎ型半導体層５、ｐ型半導体層６の順に積層されている。さらに、ｎ型半導体層５に対して電気的に接続されるカソード電極８が、ｐ型半導体層６の一部を除去してｎ型半導体層５を露出させた部分に積層される形に形成されている。一方、ｐ型半導体層６に対して電気的に接続されるアノード電極７はｐ型半導体層６に積層される形に形成されている。アノード電極７およびカソード電極８はそれぞれ金属材料から形成されている。   As shown in FIG. 2, the first LED chip 2 includes semiconductor layers 5 and 6 of different conductivity types (here, n-type and p-type) on one surface of a rectangular substrate 4. The p-type semiconductor layers 6 are stacked in this order. Further, the cathode electrode 8 electrically connected to the n-type semiconductor layer 5 is formed so as to be laminated on the portion where the p-type semiconductor layer 6 is removed and the n-type semiconductor layer 5 is exposed. Has been. On the other hand, the anode electrode 7 electrically connected to the p-type semiconductor layer 6 is formed to be stacked on the p-type semiconductor layer 6. The anode electrode 7 and the cathode electrode 8 are each formed from a metal material.

このＬＥＤチップ２は、周知のように、アノード電極７とカソード電極８との間に電圧が印加されることによってｐ型半導体層６とｎ型半導体層５との接合部付近が発光する。ここでは、基板４をＬＥＤチップ２の出力光に対して透明なサファイア基板としており、基板４の背面（図２の下面）側にｎ型半導体層５およびｐ型半導体層６を形成することにより、ｐ型半導体層６とｎ型半導体層５との接合部で発生した光が基板４を通して前方（図１の上方）に出射されるようにしてある。つまり、基板４の前面（図１の上面）を第１のＬＥＤチップ２における光の取出し面としている。   As is well known, the LED chip 2 emits light near the junction between the p-type semiconductor layer 6 and the n-type semiconductor layer 5 when a voltage is applied between the anode electrode 7 and the cathode electrode 8. Here, the substrate 4 is a sapphire substrate that is transparent to the output light of the LED chip 2, and the n-type semiconductor layer 5 and the p-type semiconductor layer 6 are formed on the back surface (lower surface in FIG. 2) side of the substrate 4. The light generated at the junction between the p-type semiconductor layer 6 and the n-type semiconductor layer 5 is emitted forward (upward in FIG. 1) through the substrate 4. That is, the front surface (upper surface in FIG. 1) of the substrate 4 is a light extraction surface of the first LED chip 2.

また、本実施形態で示すＬＥＤチップ２においては、アノード電極７とカソード電極８との間に電圧を印加したときにｐ型半導体層６およびｎ型半導体層５の一部に局所的に電流が流れることを防止するために、カソード電極８に以下の形状を採用している。すなわち、カソード電極８は、図３に示すように、基板４において隣り合う一対の角部にそれぞれ配置された２個の電極パッド８ａを備え、両電極パッド８ａが基板４における前記一対の角部間の一辺に沿う連結パターン８ｂによって連結され、かつ各電極パッド８ａおよび連結パターン８ｂから基板４の前記一辺とは対向する一辺（図３の下辺）に向かって複数条の櫛歯パターン８ｃが延設された構成を有する。この構成では、ｎ型半導体層５の比較的広範囲にわたって敷設された連結パターン８ｂおよび櫛歯パターン８ｃが、両電極パッド８ａと略等電位になるので、アノード電極７と両電極パッド８ａとの間に電圧を印加したときにｐ型半導体層６およびｎ型半導体層５に流れる電流が局所的に集中することはない。その結果、基板４の前面の大部分について輝度が均等化され、輝度むらの少ない面発光を実現することができる。   Further, in the LED chip 2 shown in the present embodiment, when a voltage is applied between the anode electrode 7 and the cathode electrode 8, a current is locally applied to a part of the p-type semiconductor layer 6 and the n-type semiconductor layer 5. In order to prevent the flow, the following shape is adopted for the cathode electrode 8. That is, as shown in FIG. 3, the cathode electrode 8 includes two electrode pads 8 a respectively disposed at a pair of adjacent corners on the substrate 4, and both electrode pads 8 a are the pair of corners on the substrate 4. A plurality of comb-teeth patterns 8c extend from one electrode pad 8a and the connection pattern 8b to one side (the lower side in FIG. 3) facing the one side (the lower side in FIG. 3). It has a configuration. In this configuration, the connection pattern 8b and the comb-teeth pattern 8c laid over a relatively wide range of the n-type semiconductor layer 5 are substantially equipotential with the electrode pads 8a, and therefore, between the anode electrode 7 and the electrode pads 8a. The current flowing in the p-type semiconductor layer 6 and the n-type semiconductor layer 5 does not concentrate locally when a voltage is applied to. As a result, the luminance is equalized over most of the front surface of the substrate 4, and surface emission with less luminance unevenness can be realized.

ここにおいて、基板４の前面であっても、カソード電極８を形成するためにｐ型半導体層６が除去されている部分、つまり図３においてアノード電極７が形成されていない部分は、ｎ型半導体層５とｐ型半導体層６との接合部が存在しないから発光することはない。要するに、第１のＬＥＤチップ２における基板４の前面に平行する面内でｐ型半導体層６が除去された部分は、非発光領域Ａとなる。   Here, even on the front surface of the substrate 4, the portion where the p-type semiconductor layer 6 is removed to form the cathode electrode 8, that is, the portion where the anode electrode 7 is not formed in FIG. No light is emitted because there is no junction between the layer 5 and the p-type semiconductor layer 6. In short, the portion of the first LED chip 2 from which the p-type semiconductor layer 6 has been removed in a plane parallel to the front surface of the substrate 4 is a non-light emitting region A.

一方、第２のＬＥＤチップ３は、第１のＬＥＤチップ２における光の取出し面である基板４の前面上に積み重なるように、ＬＥＤチップ２に対して透光性材料（たとえば、シリコーン樹脂）を用いてダイボンドされている。しかも、第２のＬＥＤチップ３は、第１のＬＥＤチップ２と同じ側（前方）に光を取出す向きに向けられている。したがって、第１のＬＥＤチップ２のみを実装する場合と同じだけの実装面積で光源装置１全体を実装可能としながらも、光源装置１からは第１および第２の両ＬＥＤチップ２，３の混色光を取出すことができる。   On the other hand, the second LED chip 3 is made of a translucent material (for example, silicone resin) with respect to the LED chip 2 so as to be stacked on the front surface of the substrate 4 that is the light extraction surface of the first LED chip 2. It is die-bonded using. And the 2nd LED chip 3 is orient | assigned to the direction which takes out light to the same side (front) as the 1st LED chip 2. FIG. Therefore, while the entire light source device 1 can be mounted with the same mounting area as when only the first LED chip 2 is mounted, the light source device 1 mixes the colors of both the first and second LED chips 2 and 3. The light can be taken out.

ところで、第１および第２の両ＬＥＤチップ２，３が単に積み重ねられていると、図５に示した従来例のように、下層のＬＥＤチップ（つまり第１のＬＥＤチップ２）からの光の一部が上層のＬＥＤチップ（つまり第２のＬＥＤチップ３）で妨げられることによって、第１のＬＥＤチップ２について光の取出効率が低下する。そこで、本実施形態の光源装置１では、第２のＬＥＤチップ３が第１のＬＥＤチップ２からの光を妨げることがないように、第２のＬＥＤチップ３を第１のＬＥＤチップ２における非発光領域Ａ内に積み重ねてある。すなわち、第２のＬＥＤチップ３は第１のＬＥＤチップ２において、ｐ型半導体層６が除去されており発光することのない非発光領域Ａ内に収まるように配置されている。ここでは、カソード電極８のうちで矩形状に形成された電極パッド８ａに対応する非発光領域Ａ内に第２のＬＥＤチップ３を配置している。   By the way, when both the first and second LED chips 2 and 3 are simply stacked, the light from the lower LED chip (that is, the first LED chip 2) is transmitted as in the conventional example shown in FIG. The light extraction efficiency of the first LED chip 2 is reduced by being partially blocked by the upper LED chip (that is, the second LED chip 3). Therefore, in the light source device 1 of the present embodiment, the second LED chip 3 is not connected to the first LED chip 2 so that the second LED chip 3 does not block the light from the first LED chip 2. They are stacked in the light emitting area A. That is, the second LED chip 3 is arranged in the first LED chip 2 so that the p-type semiconductor layer 6 is removed and the second LED chip 3 falls within the non-light-emitting region A that does not emit light. Here, the 2nd LED chip 3 is arrange | positioned in the non-light-emission area | region A corresponding to the electrode pad 8a formed in the rectangular shape among the cathode electrodes 8. FIG.

非発光領域Ａはそもそも発光することのない領域であるから、上記構成によれば、第２のＬＥＤチップ３が第１のＬＥＤチップ２からの光を妨げることはなく、第１のＬＥＤチップ２における光の取出効率を低下させることはない。その結果、第１および第２のいずれのＬＥＤチップ２，３においても光の取出効率が低下することはない。   Since the non-light emitting area A is an area that does not emit light in the first place, according to the above configuration, the second LED chip 3 does not block the light from the first LED chip 2, and the first LED chip 2. There is no reduction in the light extraction efficiency. As a result, the light extraction efficiency does not decrease in both the first and second LED chips 2 and 3.

実装基板９においては一面側に導電パターン１０（図１参照）が設けられている。ここで、第１のＬＥＤチップ２は、アノード電極７およびカソード電極８の電極パッド８ａが導電パターン１０にそれぞれ電気的に接続されるように、アノード電極７およびカソード電極８を実装基板９に対向させた状態で、バンプ１１を用いて実装基板９にフリップチップ実装される。さらに、第２のＬＥＤチップ３は、第１のＬＥＤチップ２に対してダイボンドされているものの電気的には接続されておらず、実装基板９の導電パターン１０に対してボンディングワイヤ１２を用いてワイヤボンディングにより接続される。なお、第２のＬＥＤチップ３の接続方式はワイヤボンディングに限るものではなく、たとえば第１のＬＥＤチップ２に第２のＬＥＤチップ３への給電経路を設け、ＬＥＤチップ２に対してＬＥＤチップ３をフリップチップ実装するようにしてもよい。   In the mounting substrate 9, a conductive pattern 10 (see FIG. 1) is provided on one surface side. Here, in the first LED chip 2, the anode electrode 7 and the cathode electrode 8 are opposed to the mounting substrate 9 so that the electrode pads 8 a of the anode electrode 7 and the cathode electrode 8 are electrically connected to the conductive pattern 10, respectively. In this state, flip-chip mounting is performed on the mounting substrate 9 using the bumps 11. Furthermore, although the second LED chip 3 is die-bonded to the first LED chip 2 but is not electrically connected, the bonding pattern 12 is used for the conductive pattern 10 of the mounting substrate 9. Connected by wire bonding. Note that the connection method of the second LED chip 3 is not limited to wire bonding. For example, a power supply path to the second LED chip 3 is provided in the first LED chip 2, and the LED chip 3 is connected to the LED chip 2. May be flip-chip mounted.

本実施形態の光源装置１においては、第１のＬＥＤチップ２のカソード電極８が、基板４において隣り合う一対の角部にそれぞれ配置された２個の電極パッド８ａを備えているので、電極パッド８ａに対応する各箇所に第２のＬＥＤチップ３をそれぞれ配置してある。つまり、第２のＬＥＤチップ３は、基板４における前記一対の角部に存在する非発光領域Ａ内に、それぞれ１個ずつ配置されている。ただし、第２のＬＥＤチップ３の個数は２個に限るものではなく、第１のＬＥＤチップ２に固定可能な範囲内で任意に設計すればよい。   In the light source device 1 of the present embodiment, the cathode electrode 8 of the first LED chip 2 includes the two electrode pads 8a respectively disposed at a pair of adjacent corners on the substrate 4, so that the electrode pads The second LED chip 3 is arranged at each location corresponding to 8a. That is, one second LED chip 3 is disposed in each of the non-light emitting areas A present at the pair of corners of the substrate 4. However, the number of the second LED chips 3 is not limited to two, and may be arbitrarily designed within a range that can be fixed to the first LED chip 2.

また、ここでは２個の第２のＬＥＤチップ３として、互いに発光色が異なるものを採用しており、これにより、第１のＬＥＤチップ２と第２の両ＬＥＤチップ３との合計３個のＬＥＤチップ２，３から、３色の光が取出されることになる。ここでは、第１のＬＥＤチップ２として青色に発光するものを用い、第２のＬＥＤチップ３として赤色と緑色との各色に発光するものを用いている。したがって、光源装置１全体としては赤色光、緑色光、青色光の混色光である白色光が得られる。さらに、各ＬＥＤチップ２，３への供給電流を個別に調節すれば、混色光の光色を変化させることもできる。   In addition, here, as the two second LED chips 3, those having different emission colors are adopted, and thereby, a total of three of the first LED chip 2 and the second both LED chips 3. Three colors of light are extracted from the LED chips 2 and 3. Here, the first LED chip 2 that emits light in blue is used, and the second LED chip 3 that emits light in each color of red and green is used. Accordingly, white light that is a mixed color light of red light, green light, and blue light is obtained as the entire light source device 1. Furthermore, if the supply current to each LED chip 2 and 3 is adjusted individually, the light color of the mixed color light can be changed.

なお、本実施形態では、赤色、緑色、青色の各ＬＥＤチップ２，３からの光を混色するだけで白色光を実現する構成を例示したが、この構成に限るものではなく、たとえば青色光に反応して黄色に発光する蛍光体を透明樹脂に混入した光色変換部材（図示せず）を、第１のＬＥＤチップ２を覆うように設け、第１のＬＥＤチップ２の青色光と蛍光体の黄色光との混色により白色光を実現することもできる。この場合には、第２の各ＬＥＤチップ３からの赤色光および緑色光を、前記白色光に混色させることにより、光源装置１から出力される光の演色性を高めたり色温度を変化させたりすることができる。さらにまた、第１および第２の各ＬＥＤチップ２，３の発光色は上述した赤色、緑色、青色の組み合わせに限らず、たとえば第２のＬＥＤチップ３を２個とも同じ発光色としてもよい。   In the present embodiment, the configuration that realizes white light by simply mixing the light from the red, green, and blue LED chips 2 and 3 is exemplified, but the configuration is not limited to this configuration. A light color conversion member (not shown) in which a phosphor emitting yellow light by reaction is mixed in a transparent resin is provided so as to cover the first LED chip 2, and the blue light and the phosphor of the first LED chip 2 are provided. White light can also be realized by mixing with yellow light. In this case, red light and green light from the second LED chips 3 are mixed with the white light, thereby enhancing the color rendering properties of the light output from the light source device 1 and changing the color temperature. can do. Furthermore, the emission colors of the first and second LED chips 2 and 3 are not limited to the combination of red, green, and blue described above, and for example, the two second LED chips 3 may have the same emission color.

本発明の実施形態の光源装置を示す斜視図である。It is a perspective view which shows the light source device of embodiment of this invention. 図１のＸ−Ｘ断面図である。It is XX sectional drawing of FIG. 同上に用いる第１のＬＥＤチップを実装基板側から見た平面図である。It is the top view which looked at the 1st LED chip used for the same from the mounting substrate side. 従来例を示す側面図である。It is a side view which shows a prior art example. 他の従来例を示す側面図である。It is a side view which shows another prior art example.

符号の説明Explanation of symbols

１ 光源装置
２ 第１の発光ダイオードチップ
３ 第２の発光ダイオードチップ
５ ｎ型半導体層
６ ｐ型半導体層
８ （カソード）電極
９ 実装基板
Ａ 非発光領域 DESCRIPTION OF SYMBOLS 1 Light source device 2 1st light emitting diode chip 3 2nd light emitting diode chip 5 n-type semiconductor layer 6 p-type semiconductor layer 8 (cathode) electrode 9 mounting substrate A non-light-emitting region

Claims (3)

実装基板上にフリップチップ実装される第１の発光ダイオードチップと、第１の発光ダイオードチップとは発光色が異なる第２の発光ダイオードチップとを備え、第１および第２の両発光ダイオードチップで発生した光の混色光を出力する光源装置であって、第１の発光ダイオードチップは、異種導電型の半導体が積層されており、実装基板との対向面の一部においては前記異種導電型の半導体の一方が除去されて電極が形成されており、第２の発光ダイオードチップは、第１の発光ダイオードチップと同じ側に光を取出す向きに向けられ、第１の発光ダイオードチップにおいて光を取出す面上で前記異種導電型の半導体の一方が除去されている非発光領域内に積み重ねられていることを特徴とする光源装置。   A first light-emitting diode chip flip-chip mounted on the mounting substrate; and a second light-emitting diode chip having a light emission color different from that of the first light-emitting diode chip. In the light source device that outputs mixed color light of generated light, the first light emitting diode chip is formed by stacking semiconductors of different conductivity types, and a part of the surface opposite to the mounting substrate has the different conductivity types. One of the semiconductors is removed to form an electrode, and the second light emitting diode chip is directed to the same side as the first light emitting diode chip, and the light is extracted from the first light emitting diode chip. A light source device, wherein the light source device is stacked in a non-light-emitting region where one of the semiconductors of different conductivity type is removed on a surface. 前記第２の発光ダイオードチップは、前記実装基板に対してワイヤボンディングにより接続されていることを特徴とする請求項１記載の光源装置。   The light source device according to claim 1, wherein the second light emitting diode chip is connected to the mounting substrate by wire bonding. 前記第１および第２の発光ダイオードチップは、前記混色光を白色系の光とするように各々の発光色が設定されていることを特徴とする請求項１または請求項２に記載の光源装置。

3. The light source device according to claim 1, wherein each of the first and second light emitting diode chips has a light emission color set so that the mixed color light is white light. 4. .

JP2006047416A 2006-02-23 2006-02-23 Light source apparatus Withdrawn JP2007227675A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113597675A (en) * 2019-03-19 2021-11-02 首尔伟傲世有限公司 Light emitting element package and application thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113597675A (en) * 2019-03-19 2021-11-02 首尔伟傲世有限公司 Light emitting element package and application thereof

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