JP2007215396A - Semiconductor power converter - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor power converter, capable of simultaneously achieving both of a reduction in the breakdown voltage of a semiconductor chip and reduction in the heat generation of a capacitor. <P>SOLUTION: A semiconductor chip structure 20 is arranged so that a P bus-bar 23 and an N bus-bar 24 are arranged opposite to each other, a first power semiconductor chip 21 is mounted on the lower face of the P bus-bar 23, and a second power semiconductor chip 22 is mounted on the upper face of the N bus-bar 24. Next, an AC bus-bar 25 is provided between the high-side semiconductor chip 21 and the low-side semiconductor chip 22 so as to electrically connect them. At the same time, the capacitor 30 shares the upper/lower (positive/negative) electrodes with the P bus-bar 23 and N bus-bar 24 of the semiconductor chip structure 20. By having the semiconductor chip structure 20 and capacitor 30 use the P bus-bar 23 and N bus-bar 24 as a common support, the semiconductor chip structure 20 and the capacitor 30 can be arranged close to each other and in parallel to each other and constitute the semiconductor power converter 10. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor power conversion device used in an electric vehicle such as an electric vehicle or a hybrid electric vehicle, for example, an inverter device that converts DC power supplied from a battery into AC power, and the like. About.

  In a power converter such as an inverter used for driving an AC motor, a semiconductor module called an IPM and a capacitor are used. This semiconductor module is a module in which a power semiconductor chip is electrically connected by a combination of bus bar and wire bond, and a thermal circuit for thermally connecting heat generated from the chip to a cooler is built.

  Conventionally, the IPM and the capacitor described above are designed separately. This is based on the desire to separately design and manufacture component functions (electrical specifications, manufacturing process, cooling design, etc.), but on the other hand, it becomes a factor that adds new specifications to each other's designs. Yes. For example, from the IPM design side, in order to make the surge voltage at the time of switching below the breakdown voltage of the chip, reducing the inductance inside and outside the IPM becomes a design issue.

  Also, from the capacitor design, the ripple current generated in the IPM part is given as a design condition, the capacitor itself for supplying this is reduced in ESL (reduction of parasitic inductance), and the capacitor itself for allowing the capacitor heat generation. Heat transfer design and low ESL (reduction of parasitic resistance) are design issues. Since parasitic resistance = heat generation is inversely proportional to the capacity of the capacitor, a capacitor with low loss and good heat dissipation = large and large capacity capacitor is required. However, since a large capacitor has a small thermal resistance, there is an advantage that the temperature rise is small.

  On the other hand, in JP2004-335625, a flat capacitor is installed close to the IPM, but the upper structure is a capacitor and the lower structure is a chip mounting surface, and the capacitor and the semiconductor module are supported by separate members. As a result, the support structure becomes complicated. In addition, since the capacitor itself has not been downsized, the inductance is not smaller than the conventional one. Therefore, such a technique has not yet solved the conventional problems described above.

  In this way, it is necessary to design from the viewpoint of conflicting between IPM design and capacitor design, and (semiconductor) power conversion that can simultaneously realize both reduction of the breakdown voltage of the semiconductor chip and reduction of heat generation of the capacitor The device has not yet been obtained.

JP2004-335625

  The present invention provides a semiconductor power converter capable of solving the problem of the system design of connecting the IPM and the capacitor and simultaneously realizing both the reduction of the breakdown voltage of the semiconductor chip and the reduction of the heat generation of the capacitor. The purpose is to do.

In order to achieve the above object, the present invention provides:
A semiconductor power converter comprising a power semiconductor chip, a semiconductor chip structure including a P bus bar and an N bus bar provided so as to sandwich the power semiconductor chip from both sides, and a capacitor,
The capacitor is supported by being sandwiched between the P bus bar and the N bus bar in the semiconductor chip structure, and the semiconductor chip structure and the capacitor are arranged close to each other in parallel. The present invention relates to a power conversion device.

  According to the present invention, the capacitor constituting the semiconductor power converter is located so as to share the P bus bar and the N bus bar of the semiconductor chip structure that also constitutes the semiconductor power converter, and is sandwiched between these bus bars, The semiconductor chip structure and the capacitor are arranged adjacent to each other in parallel. Therefore, the inductance of the capacitor may be determined so as to match the semiconductor chip structure, and as a result, the inductance can be sufficiently reduced.

  Further, the bus bar inductance itself in the semiconductor chip structure is sufficiently small, and there are very few elements for improving the inductance such as wire bonding for external connection. Therefore, the inductance of the capacitor can be further reduced due to the sufficiently small inductance of the semiconductor chip structure itself. Therefore, surge at the time of switching can be sufficiently reduced, and the breakdown voltage of the semiconductor chip structure can be sufficiently reduced.

  In a preferred aspect of the present invention, the power semiconductor chip includes a first semiconductor chip provided so as to contact the P bus bar and a second semiconductor chip provided so as to contact the N bus bar. The first semiconductor chip and the second semiconductor chip are positioned so as to face each other, and an AC bus bar is provided between the first semiconductor chip and the second semiconductor chip. The AC bus bar is configured to be electrically joined to the first semiconductor chip and the second semiconductor chip.

  According to such a configuration, AC power converted from DC power in the power converter can be efficiently extracted without increasing the conductance of the semiconductor chip structure. In addition, since stress is not applied to the semiconductor chip structure when taking out the AC power, damage to the semiconductor chip structure can be greatly reduced.

  In another preferable aspect of the present invention, the AC bus bar is electrically connected to the first semiconductor chip and the second semiconductor chip via a clip-shaped spring. In this case, the spring is pressed against the AC bus bar, the first semiconductor chip, and the second semiconductor chip between the AC bus bar, the first semiconductor chip, and the second semiconductor chip. Therefore, the electrical connection between the AC bus bar and the first semiconductor chip and the second semiconductor chip can be reliably performed.

  Furthermore, in another preferable aspect of the present invention, an insulating layer is provided outside the N bus bar and the P bus bar so as to be in contact with at least one of the N bus bar and the P bus bar. Mounting with a predetermined frame member. As a result, the semiconductor power conversion device can be mounted while the insulating properties of the semiconductor chip structure and the like are reliably maintained.

  In another aspect of the present invention, a predetermined refrigerant can be made to flow through at least one of the N bus bar and the P bus bar, and a predetermined refrigerant can be made to flow into the AC bus bar. can do. As a result, the bus bar or the like functions as a heat sink, and can effectively absorb the heat generated from the semiconductor chip, and can effectively generate the heat from the capacitor due to downsizing and reducing the inductance. Can be absorbed into.

  Instead of flowing the refrigerant into the bus bar described above, a cooling layer is provided between the insulating layer and at least one of the P bus bar and the N bus bar, and the heat generation described above is absorbed by the cooling layer. You can also. The cooling layer can be configured as a cooling jacket configured to flow a predetermined refrigerant, or can be configured as a heat absorption layer, that is, a heat dissipation layer, by being configured from a material having excellent thermal conductivity. . In the latter case, at least a part of the layer may be brought into contact with the refrigerant to be cooled.

  In one aspect of the present invention, the frame member is disk-shaped, and the semiconductor power conversion device can be arranged and mounted in a disk shape. In this example, the semiconductor power conversion device is built in the end of a motor having a disk type structure, for example, by connecting an AC bus bar to a winding of the motor and a PN bus bar to a DC power supply line outside the motor. The motor can be made compact.

  In another aspect of the present invention, the frame member may have a circular belt shape, and the semiconductor power conversion device may be arranged and mounted in a circular belt shape. Also in this example, the semiconductor power conversion device is built in the end of a motor having a cylindrical structure, for example, by connecting an AC bus bar to a winding of the motor and a PN bus bar to a DC power supply line outside the motor. The motor can be made compact.

  As described above, according to the present invention, the problem of the system design of connecting the IPM and the capacitor can be solved, and both the reduction of the breakdown voltage of the semiconductor chip and the reduction of the heat generation of the capacitor can be realized simultaneously. A semiconductor power conversion device can be provided.

  Hereinafter, the features and advantages of the present invention will be described in detail based on the best mode for carrying out the invention.

  FIG. 1 is a configuration diagram schematically showing an example of a semiconductor power conversion device of the present invention. A semiconductor power conversion device 10 shown in FIG. 1 includes a semiconductor chip structure 20 and a capacitor 30 arranged in parallel to each other.

  In the semiconductor chip structure 20, the P bus bar 23 and the N bus bar 24 are arranged to face each other, and a first power semiconductor chip (high side semiconductor chip) 21 is attached to the lower surface of the P bus bar 23. At the same time, a second power semiconductor chip (low-side semiconductor chip) 22 is attached to the upper surface of the N bus bar 24 and arranged so as to face each other. An AC bus bar 25 is provided between the high-side semiconductor chip 21 and the low-side semiconductor chip 22. The AC bus bar 25 is electrically connected to the high-side semiconductor chip 21 and the low-side semiconductor chip 22 by a member (wire) (not shown).

  On the other hand, the capacitor 30 has upper and lower (positive and negative) electrodes shared by the P bus bar 23 and the N bus bar 24 of the semiconductor chip structure 20. Therefore, the semiconductor chip structure 20 and the capacitor 30 use the P bus bar 23 and the N bus bar 24 as a common support. Therefore, in the semiconductor power conversion device 10, the semiconductor chip structure 20 and the capacitor 30, which are constituent elements thereof, are supported by a common support, so that the support structure can be simplified.

  Further, the capacitor 30 is positioned so as to be sandwiched between the P bus bar 23 and the N bus bar 24, and the semiconductor chip structure 20 and the capacitor 30 are arranged adjacent to each other in parallel. The inductance may be determined so as to match the semiconductor chip structure 20, and as a result, the inductance can be sufficiently reduced.

  In the power conversion device 10 shown in FIG. 1, the inductances of the P bus bar 23 and the N bus bar 24 in the semiconductor chip structure 20 are sufficiently small as will be described later, and the inductance such as wire bonding for external connection is increased. There are very few such elements. Therefore, the inductance of the capacitor 30 can be further reduced due to the sufficiently small inductance of the semiconductor chip structure 20 itself. Therefore, the surge at the time of switching can be sufficiently reduced, and the breakdown voltage of the semiconductor chip structure 20 can be sufficiently reduced.

  In the power conversion apparatus 10 shown in FIG. 1, the AC bus bar 25 is provided between the high-side semiconductor chip 21 and the low-side semiconductor chip 22 and is configured to be electrically coupled to each other. Therefore, AC power converted from DC power in the power converter 10 can be efficiently extracted without increasing the conductance of the semiconductor chip structure 20. Further, when taking out the AC power, no stress is applied to the semiconductor chip structure 20 as will be described later, so that damage to the semiconductor chip structure 20 can be greatly reduced.

  Further, in the power conversion device 10 shown in FIG. 1, a predetermined frame member is provided outside the P bus bar 23 and the N bus bar 24 via the insulating layers 41 and 42, and is mounted thereby.

  The P bus bar 23, the N bus bar 24, and the AC bus bar 25 can function as a predetermined cooling layer as described below.

  FIGS. 2 to 6 and FIGS. 9 to 14 are side (cut) views specifically showing various aspects of the power conversion device 10 shown in FIG. 1.

  FIG. 2 is a diagram mainly illustrating a connection mode between the P bus bar 23 and the N bus bar 24 and the AC bus bar 25. The basic configuration is the same as the configuration shown in FIG. 1, and includes a semiconductor chip structure having the same configuration as the semiconductor chip structure shown in FIG. 1, and the same capacitor as the capacitor shown in FIG. As described above, the P bus bar 23 and the N bus bar 24 and the AC bus bar 25 constituting the semiconductor chip structure 20 must be electrically connected. In this example, such electrical connection is performed. The clip-like spring 45 is used in a double arrangement. Since the spring 45 comes into pressure contact with the AC bus bar 25, the high side semiconductor chip 21, and the low side semiconductor chip 22, the electrical connection between the AC bus bar 25 and the high side semiconductor chip 21 and the low side semiconductor chip 22 is ensured. Will be able to do.

  In this example, an insulating support member 47 for mounting is inserted between the frame members 43 and 44 so that mounting is performed more accurately. A gate signal line 46 is connected to the high side semiconductor chip 21 and the low side semiconductor chip 22.

  FIG. 3 is also a diagram mainly illustrating a connection mode between the P bus bar 23 and the N bus bar 24 and the AC bus bar 25. However, the mode shown in FIG. 3 is basically the same as the mode shown in FIG. 2, but in the mode shown in FIG. 2, electrical connection between the AC bus bar 25, the high-side semiconductor chip 21, and the low-side semiconductor chip 22. 3 is different from the example shown in FIG. 3 in that the spring 45 is single. However, in the embodiment shown in FIG. 3, as in the embodiment shown in FIG. 2, the electrical connection between the AC bus bar 25 and the high-side semiconductor chip 21 and the low-side semiconductor chip 22 can be reliably performed.

  In the embodiment shown in FIG. 3, the insulating support member 47 at the time of mounting is inserted between the P bus bar 23 and the N bus bar 24. In this case, the mounting is performed in the same manner as the embodiment shown in FIG. Can be performed reliably.

  FIG. 4 is a diagram for mainly explaining a mode when a cooling effect is imparted in the power conversion device of the present invention. In the example shown in FIG. 4, refrigerant passages 23 </ b> A and 24 </ b> A are formed in a P bus bar 23 and an N bus bar 24, respectively, and a refrigerant such as water flows through them. In this case, the P bus bar 23 and the N bus bar 24 function as a heat sink, and can effectively absorb the heat generated from the high side semiconductor chip 21 and the low side semiconductor chip 22, and the size is reduced and the inductance is reduced. Therefore, the heat generated from the capacitor 30 can be effectively absorbed.

  In the example shown in FIG. 4, the refrigerant is configured to flow through both the P bus bar 23 and the N bus bar 24, but may be configured to flow through only one of them. In this case, the clip-like spring 45 provided between the AC bus bar 25 and the high-side semiconductor chip 21 and the low-side semiconductor chip 22 performs not only an electrical connection function but also a thermal connection function. Thus, the AC bus bar 25, the high-side semiconductor chip 21, and the low-side semiconductor chip 22 are pressed against each other.

  Specifically, when the refrigerant is configured to flow only in the P bus bar 23, the spring 45, the AC bus bar 25, the high side semiconductor chip 21, and the low side semiconductor chip 22 perform a function of thermal connection. If it is not configured, heat generated by the low-side semiconductor chip 22 cannot be sufficiently absorbed by the P bus bar 23 via the spring 45. Further, in the case where the refrigerant is configured to flow only in the N bus bar 25, the spring 45, the AC bus bar 25, the high side semiconductor chip 21, and the low side semiconductor chip 22 are configured to perform a thermal connection function. Otherwise, the heat generated by the high-side semiconductor chip 21 cannot be sufficiently absorbed by the N bus bar 24 via the spring 45.

The spring 45 can be made of a spring material such as general-purpose beryllium. In such a case, the spring 45, the AC bus bar 25, the high-side semiconductor chip 21, the low-side, in order to sufficiently secure the thermal connection. A sufficient contact area with the semiconductor chip 22 is ensured. Specifically, as shown in FIG. 14, the contact area may be increased by increasing the number of springs 45. The spring 45 can also be made of a highly heat conductive material such as gold, silver, copper, or aluminum.

  FIG. 5 is a diagram mainly illustrating an aspect in a case where a cooling effect is imparted in the power conversion device of the present invention, similarly to the example shown in FIG. 4. In the example shown in FIG. 5, the refrigerant passages 23A and 24A are formed in the P bus bar 23 and the N bus bar 24, respectively, and the refrigerant passage 25A is also formed in the AC bus bar 25. The refrigerant is configured to flow. In this case, the P bus bar 23, the N bus bar 24, and the AC bus bar 25 function as heat sinks, and can effectively absorb heat generated from the high side semiconductor chip 21 and the low side semiconductor chip 22, and can be downsized. Heat generated from the capacitor 30 due to the reduced inductance can be effectively absorbed.

  In the example illustrated in FIG. 5, the refrigerant is configured to flow through the P bus bar 23, the N bus bar 24, and the AC bus bar 25, but may be configured to flow only through the AC bus bar 25. Also in this case, as in the case shown in FIG. 4, the clip-like spring 45 provided between the AC bus bar 25 and the high-side semiconductor chip 21 and the low-side semiconductor chip 22 only functions as an electrical connection. In addition, the AC bus bar 25, the high-side semiconductor chip 21, and the low-side semiconductor chip 22 are pressed against each other so as to perform a thermal connection function.

  Specifically, when the refrigerant is configured to flow only in the AC bus bar 25, the spring 45, the AC bus bar 25, the high-side semiconductor chip 21, and the low-side semiconductor chip 22 perform a function of thermal connection. If not configured, the heat generated by the high-side semiconductor chip 21 and the low-side semiconductor chip 22 cannot be sufficiently absorbed by the AC bus bar 25 via the spring 45.

  FIG. 6 is a diagram mainly illustrating an aspect when a cooling effect is imparted in the power conversion device of the present invention, similarly to the example shown in FIG. 4. In this example, a cooling layer 48 is provided between the P bus bar 23 and the insulating layer 41 and between the N bus bar 24 and the insulating layer 42. Therefore, the cooling layer 48 can absorb heat generated from the high-side semiconductor chip 21 and the low-side semiconductor chip 22, and can absorb heat generated from the capacitor 30 due to downsizing and inductance reduction.

The cooling layer 48 can be configured as a cooling jacket configured to flow a predetermined refrigerant, or can be configured as a heat absorption layer, that is, a heat dissipation layer, by configuring it from a material having excellent thermal conductivity. . In the latter case, at least a part of the layer may be brought into contact with the refrigerant to be cooled.

  When the cooling layer 48 is provided only on the P bus bar 23 side or the N bus bar 24 side, the thermal connection of the spring 45 with the AC bus bar 25, the high side semiconductor chip 21, and the low side semiconductor chip 22 is sufficiently taken as described above. Like that.

9 and 10 are configuration diagrams showing a specific junction structure in the semiconductor power conversion device of the present invention. Similarly to the embodiment shown in FIG. 1, the semiconductor power conversion device 10 shown in FIGS. 9 and 10 also includes a semiconductor chip structure 20 and a capacitor 30 arranged in parallel with each other. The capacitor 30 has upper and lower (positive and negative) electrodes shared by the P bus bar 23 and the N bus bar 24 of the semiconductor chip structure 20, and the semiconductor chip structure 20 and the capacitor 30 use the P bus bar 23 and the N bus bar 24 as a common support.
On the other hand, in the semiconductor power conversion device 10 shown in FIG. 9, the upper and lower (positive and negative) electrodes of the capacitor 30 are joined to the P bus bar 23 and the N bus bar 24 by solder layers 49 and 50 made of solder, respectively. The surface electrode of the high-side semiconductor chip 21 is joined to the P bus bar 23 with the solder layer 51. The surface electrode of the low-side semiconductor chip 22 is joined to the N bus bar 24 by the solder layer 52.
As a means for joining the P bus bar 23 and the N bus bar 24 to the capacitor 30 and the semiconductor chips 21 and 22, a conductive joining means may be used in addition to the solder layers 49 to 52.

  In the semiconductor power conversion device 10 shown in FIG. 10, the upper end of the capacitor 30 is bonded to the P bus bar 23 with an adhesive layer 53 made of an adhesive. The lower end of the capacitor 30 is bonded to the N bus bar 24 with an adhesive layer 54 made of an adhesive. These adhesive layers 53 and 54 are insulating support members, and support the capacitor 30 between the P bus bar 23 and the N bus bar 24 under insulation. The positive and negative electrodes of the capacitor 30 are joined to the P bus bar 23 and the N bus bar 24 by lead wires 55 and 56, respectively.

The inductance of the semiconductor power conversion device 10 will be described. Since electromagnetic induction is determined by the product of the inductance and the rate of change of current, it is effective to reduce the inductance of the portion where the ripple current flows in the power conversion device 10. First, FIG. 11 shows a current path that flows through the semiconductor chip structure 20 during powering and regeneration, which causes a ripple current. In the configuration diagram of FIG. 11, the solid arrows indicate the current flow during powering. During power running, current flows through the capacitor 30, the solder layer 49, the P bus bar 23, the solder layer 51, the high side semiconductor chip 21, the spring 45, and the AC bus bar 25 sequentially.
In FIG. 11, the broken arrow indicates the current flow during regeneration. During regeneration, the current sequentially flows through the capacitor 30, the solder layer 50, the N bus bar 24, the solder layer 52, the low side semiconductor chip 22, the spring 45, and the AC bus bar 25.

  Then, the flow of the ripple current is as shown by a solid arrow in FIG. The ripple current is AC bus bar 25, spring 45, low-side semiconductor chip 22, solder layer 52, N bus bar 24, solder layer 50, capacitor 30, solder layer 49, P bus bar 23, and solder layer 51. Then, the high-side semiconductor chip 21 and the spring 45 are sequentially flowed to go around to return to the AC bus bar 25.

  According to the semiconductor power conversion device 10 of the present invention, the ripple current path indicated by the solid line in FIG. 12 can be made the shortest, so that the inductance of the semiconductor power conversion device 10 can be reduced.

  The stress applied to the semiconductor power conversion device 10 will be described. Various external forces are applied to the external terminal (busbar) of the semiconductor power conversion device 10. That is, the tip 25s of the AC bus bar 25 protruding from the semiconductor power conversion device 10 is coupled to the conductor 57 with a bolt, nut, or the like. As indicated by arrows in FIG. 13, an external force such as twisting or twisting is applied from the conductor 57 side to the bus bar 25 side.

  According to the semiconductor power conversion device 10 of the present invention, stress is generated in the semiconductor chips 21 and 22 inside the semiconductor power conversion device 10 because the insulating support member 47 is responsible for the external force as shown by arrows in FIG. It becomes possible to prevent this. Therefore, damage to the semiconductor power conversion device 10 due to stress can be avoided.

  FIG. 7 shows an example in which the power converter of the present invention is mounted as a specific application. In the example shown in FIG. 6, the frame members 43 and 44 have a disk shape, and the semiconductor power conversion device 10 is arranged and mounted in a disk shape. In this case, the direction of the power conversion device 10 can be arbitrarily set. For example, the capacitors 30 can be arranged so as to be located inside the radius, and the semiconductor chip structure 20 can be arranged so as to be located outside the radius, and vice versa. Further, the semiconductor chip structure 20 and the capacitor 30 can be arranged so as to be located on the same circumference.

According to the configuration shown in FIG. 7, the semiconductor power conversion device 10 is built in the end of a motor having a disk type structure, for example, the AC bus bar 25 is used as the motor winding, and the PN bus bars 23 and 24 are provided outside the motor. By connecting to a DC power supply line, the motor can be made compact.
Specifically, as shown in the perspective view of FIG. 15, the semiconductor power conversion device 10 is attached to the end portion of the motor 58 that is opposite to the rotating shaft 59 protruding in the axial direction from the motor 58. DC power supply lines 60 and 61 are connected to the PN bus bars 23 and 24 of the semiconductor power converter 10, respectively. A coil 62 of a motor 58 is connected to the AC bus bar 25 of the semiconductor power converter 10 through a conductor 57. The coils 62 are arranged at equal intervals in the circumferential direction in the outer diameter direction of the rotor 63 coupled to the rotating shaft 59.

  FIG. 8 shows an example in which the power converter of the present invention is mounted as a specific application, as in the case shown in FIG. In the example shown in FIG. 8, the frame members 43 and 44 have a circular band shape, and the semiconductor power conversion device 10 is arranged and mounted in a circular band shape. In this case, the direction of the power conversion device 10 can be arbitrarily set. For example, as shown in FIG. 8A, the semiconductor chip structure 20 and the capacitor 30 can be arranged so as to be located at different portions in the circumferential direction on the same circumference. Further, as shown in FIG. 8B, the semiconductor chip structure 20 and the capacitor 30 are on the same circumference and in the same direction in the circumferential direction, and the capacitor 30 is located on one side in the axial direction. It can arrange so that it may be located in the other side of an axial direction.

  According to the configuration shown in FIG. 8, the semiconductor power conversion device 10 is built in the end of a motor having a cylindrical structure, for example, the AC bus bar 25 is used as the motor winding, and the PN bus bars 23 and 24 are provided outside the motor. By connecting to a DC power supply line, the motor can be made compact.

  The present invention has been described in detail above with reference to specific examples. However, the present invention is not limited to the above contents, and various modifications and changes can be made without departing from the scope of the present invention.

It is a block diagram which shows roughly an example of the semiconductor power converter device of this invention. FIG. 2 is a side (section) side view specifically showing various aspects of the power conversion device shown in FIG. 1. Similarly, it is a side (cut) side view which shows various modes in the power converter shown in Drawing 1 concretely. Similarly, it is a side (cut) side view which shows various modes in the power converter shown in Drawing 1 concretely. Similarly, it is a side (cut) side view which shows various modes in the power converter shown in Drawing 1 concretely. Similarly, it is a side (cut) side view which shows various modes in the power converter shown in Drawing 1 concretely. It is a perspective view which shows the example which mounted the power converter device of this invention as a concrete use. Similarly, it is a side view which shows the example which mounted the power converter device of this invention as a specific use, (a) shows an example, (b) shows another example. FIG. 2 is a side (section) side view specifically showing various aspects of the power conversion device shown in FIG. 1. Similarly, it is a side (cut) side view which shows various modes in the power converter shown in Drawing 1 concretely. It is a side (cut) side view which shows the current pathway of a semiconductor power converter device. It is a side (cut) side view which shows the flow of the ripple current of a semiconductor power converter device. It is a side (cut) side view which shows the transmission path of the external force input into a semiconductor power converter device. FIG. 2 is a side (section) side view specifically showing various aspects of the power conversion device shown in FIG. 1. It is a perspective view which shows the example which mounted the power converter device of this invention as a concrete use.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor power converter 20 Semiconductor chip structure 21 1st semiconductor chip (high side semiconductor chip)
22 Second semiconductor chip (low-side semiconductor chip)
23 P bus bar 24 N bus bar 25 AC bus bar 30 Capacitor 41, 42 Insulating layer 43, 44 Frame member 45 Clip spring 46 Gate signal line 47 Insulating support member 48 Cooling layer 49-52 Solder layer 53, 54 Adhesive layer 55, 56 Lead wire 57 Conductor 58 Motor 59 Rotating shaft 62 Coil

Claims (11)

A semiconductor power converter comprising a power semiconductor chip, a semiconductor chip structure including a P bus bar and an N bus bar provided so as to sandwich the power semiconductor chip from both sides, and a capacitor,
The capacitor is supported by being sandwiched between the P bus bar and the N bus bar in the semiconductor chip structure, and the semiconductor chip structure and the capacitor are arranged close to each other in parallel. Power conversion device. The power semiconductor chip includes a first semiconductor chip provided in contact with the P bus bar and a second semiconductor chip provided in contact with the N bus bar. The semiconductor chip and the second semiconductor chip are positioned so as to face each other,
An AC bus bar is provided between the first semiconductor chip and the second semiconductor chip, and the AC bus bar is electrically joined to the first semiconductor chip and the second N-type semiconductor chip. The semiconductor power conversion device according to claim 1, wherein:   3. The semiconductor power conversion according to claim 2, wherein the AC bus bar is electrically connected to the first semiconductor chip and the second semiconductor chip via a clip-shaped spring. apparatus.   An insulating layer is provided outside the N bus bar and the P bus bar so as to be in contact with at least one of the N bus bar and the P bus bar, and is configured to be mounted with a predetermined frame member via the insulating layer. The semiconductor power conversion device according to claim 1, wherein the power conversion device is a semiconductor power conversion device.   The semiconductor power conversion device according to claim 4, wherein a predetermined refrigerant is caused to flow through at least one of the N bus bar and the P bus bar.   The semiconductor power conversion device according to claim 1, wherein a predetermined refrigerant is caused to flow in the AC bus bar.   The semiconductor power conversion device according to any one of claims 4 to 6, further comprising a cooling layer between the insulating layer and at least one of the P bus bar and the N bus bar.   The semiconductor power conversion device according to claim 1, wherein the frame member has a disk shape, and the semiconductor power conversion device is arranged and mounted in a disk shape.   The semiconductor power conversion device according to claim 1, wherein the frame member has a circular band shape, and the semiconductor power conversion device is arranged and mounted in a circular band shape.   A motor comprising the semiconductor power conversion device according to claim 8.   A motor comprising the semiconductor power conversion device according to claim 9.