[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP2007201249A - Temporarily transcribing substrate, manufacturing method of thin-film device using same substrate, and electronic appliance - Google Patents

Temporarily transcribing substrate, manufacturing method of thin-film device using same substrate, and electronic appliance Download PDF

Info

Publication number
JP2007201249A
JP2007201249A JP2006019069A JP2006019069A JP2007201249A JP 2007201249 A JP2007201249 A JP 2007201249A JP 2006019069 A JP2006019069 A JP 2006019069A JP 2006019069 A JP2006019069 A JP 2006019069A JP 2007201249 A JP2007201249 A JP 2007201249A
Authority
JP
Japan
Prior art keywords
substrate
temporary transfer
thin film
transfer
temporary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006019069A
Other languages
Japanese (ja)
Inventor
Yasuaki Kodaira
泰明 小平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2006019069A priority Critical patent/JP2007201249A/en
Publication of JP2007201249A publication Critical patent/JP2007201249A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Thin Film Transistor (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique which shortens a processing time required for a transcription, when forming a device by using a transcription technique. <P>SOLUTION: A temporarily transcribing substrate (22) is used for holding a transcribed object temporarily when peeling the transcribed object created on a first substrate so as to be moved to a second substrate. A plurality of through-holes (22a) for piercing them from one surface of the substrate (22) to its opposite surface are formed, and a peeled layer (24) is included which is disposed on its one surface so as to cover the respective through-holes and to be broken by the energy given from the external. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は薄膜デバイスの基板間転写技術の改良に関する。   The present invention relates to an improvement in inter-substrate transfer technology for thin film devices.

半導体素子などの積層体の形成方法として転写技術を用いる手法が知られている。例えば、特開平10−125929号公報(特許文献1)あるいは特開平10−125930号公報(特許文献2)には、予め製造元基板上に剥離層を介して薄膜トランジスタ等の被転写体を形成しておき、その後、被転写層を仮転写基板に接合し、剥離層に光照射して剥離を生じさせることにより、被転写体を仮転写基板に転写する手法が開示されている。この手法によれば、製造条件の異なる複数種類の薄膜素子や薄膜回路などをそれぞれ最適な条件で仮転写基板に形成した後に仮転写基板へ移動させることにより所望の電子デバイスを製造することができる。
特開平10−125929号公報 特開平10−125930号公報
As a method for forming a laminated body such as a semiconductor element, a technique using a transfer technique is known. For example, in Japanese Patent Application Laid-Open No. 10-125929 (Patent Document 1) or Japanese Patent Application Laid-Open No. 10-125930 (Patent Document 2), a transfer body such as a thin film transistor is previously formed on a manufacturer substrate via a release layer. Then, a method is disclosed in which the transfer target layer is transferred to the temporary transfer substrate by joining the transfer target layer to the temporary transfer substrate and irradiating the release layer with light to cause peeling. According to this method, a desired electronic device can be manufactured by forming a plurality of types of thin film elements or thin film circuits having different manufacturing conditions on the temporary transfer substrate under optimum conditions and then moving the thin film elements to the temporary transfer substrate. .
Japanese Patent Laid-Open No. 10-125929 JP-A-10-125930

上述した転写技術を用いたプロセスでは、被転写体を仮転写基板において一旦保持する際に、後の工程において除去が容易になるように水溶性接着材などの液体溶解性を有する接着材を用いていた。そして、2回目の転写時においては、転写先基板と被転写体とを非水溶性の接着材によって接合した後に、被転写体と仮転写基板との間に介在する水溶性接着材を水により溶解させていた。しかしながら、この水溶性接着材を溶解させる過程においては、被転写体と仮転写基板との接合体の外周から両者の隙間を伝って内部へ水を浸透させることになるので、水の侵入可能な開口面積が少なく、水溶性接着材の溶解に長い時間を要していた。   In the process using the transfer technique described above, an adhesive having a liquid solubility such as a water-soluble adhesive is used so that the transferred object is once held on the temporary transfer substrate so that it can be easily removed in a later step. It was. At the time of the second transfer, after joining the transfer destination substrate and the transfer object with a water-insoluble adhesive, the water-soluble adhesive interposed between the transfer object and the temporary transfer substrate is washed with water. It was dissolved. However, in the process of dissolving the water-soluble adhesive, water penetrates from the outer periphery of the joined body of the transferred body and the temporary transfer substrate to the inside through the gap between the both, so that water can enter. Since the opening area is small, it took a long time to dissolve the water-soluble adhesive.

そこで、本発明は、転写技術を用いてデバイス形成を行う場合において、転写に要する処理時間の短縮化が可能な技術を提供することを目的とする。   Accordingly, an object of the present invention is to provide a technique capable of shortening a processing time required for transfer when a device is formed using a transfer technique.

上記目的を達成するため本発明の仮転写基板は、第1の基板上に作製された被転写体を剥離して第2の基板上に移動するときに、上記被転写体を一時的に保持するために用いられる仮転写基板であって、一方面とこれに対向する他方面とを貫通する複数の貫通孔を有する基板と、上記基板の一方面上に配置されて各貫通孔を覆い、外部からのエネルギー付与によって破壊される剥離層と、を含むことを特徴とする。   In order to achieve the above object, the temporary transfer substrate of the present invention temporarily holds the transferred object when the transferred object manufactured on the first substrate is peeled off and moved onto the second substrate. A temporary transfer substrate that is used to have a substrate having a plurality of through holes penetrating one surface and the other surface facing the one surface, and disposed on one surface of the substrate to cover each through hole, And a release layer that is destroyed by external energy application.

かかる構成とすることによって、剥離転写工程において、仮転写基板の複数の貫通孔を介して接着剤を溶かして仮転写基板を分離する時間を短縮することが可能となると共に、剥離層によって仮転写基板の複数の貫通孔を予め塞いでおくことによって被転写体を仮転写基板に貼り付けたときに当該貫通孔部分で被転写体に撓み(あるいは歪み)が生じないようにすることが可能となる。被転写体には、薄膜トランジスタ、薄膜抵抗、キャパシタ、インダクタ、回路配線、これ等を含む薄膜回路(層)、集積回路、マイクロデバイス等(一定の機能を果たす薄膜デバイス)が含まれる。   By adopting such a configuration, it is possible to shorten the time for separating the temporary transfer substrate by dissolving the adhesive through the plurality of through holes of the temporary transfer substrate in the release transfer step, and the temporary transfer by the release layer. By blocking a plurality of through holes in the substrate in advance, it is possible to prevent the transferred body from being bent (or distorted) at the through hole when the transferred body is attached to the temporary transfer substrate. Become. The transferred object includes a thin film transistor, a thin film resistor, a capacitor, an inductor, a circuit wiring, a thin film circuit (layer) including these, an integrated circuit, a micro device, etc. (a thin film device that performs a certain function).

また、例えば、貫通孔の位置を第1の基板側の薄膜デバイスを避けて当該基板の切断領域に対応する位置に配置するなどの配慮の必要がなく、仮転写基板の複数の貫通孔の位置、数、分布、孔の大きさ等を考慮することなく、より自由に選定することが可能となる。   Further, for example, there is no need to consider the positions of the through holes at positions corresponding to the cutting regions of the substrate, avoiding the thin film device on the first substrate side, and the positions of the plurality of through holes of the temporary transfer substrate It is possible to select more freely without considering the number, distribution, hole size, and the like.

好ましくは、上記基板は透光性基板、上記外部エネルギーは光である。基板外部からレーザ照射等によって内部の剥離層にエネルギーを付与し、剥離層を破壊することが出来る。   Preferably, the substrate is a translucent substrate and the external energy is light. Energy can be applied to the internal release layer by laser irradiation or the like from the outside of the substrate, and the release layer can be destroyed.

好ましくは、上記被転写体が薄膜素子、薄膜回路等の薄膜デバイスである。薄膜抵抗、キャパシタ、インダクタ、回路配線、これ等を含む薄膜回路(層)、集積回路、マイクロデバイス等を剥離転写技術によって可撓性のプラスチック基板などに形成することが可能となる。   Preferably, the transfer object is a thin film device such as a thin film element or a thin film circuit. Thin film resistors, capacitors, inductors, circuit wiring, thin film circuits (layers) including these, integrated circuits, micro devices, and the like can be formed on a flexible plastic substrate or the like by a peeling transfer technique.

また、仮転写基板を使用した薄膜デバイスの製造方法は、一方面側に第1の剥離層を有する第1の基板の当該一方面側に被転写体を形成する第1工程と、第2の剥離層によって覆われた複数の貫通孔を有する仮転写基板の一方面と上記第1の基板の一方面との相互間に液体溶解性の接着材を介在させることによって、上記仮転写基板と上記第1の基板とを接合する第2工程と、上記第1の基板の第1の剥離層にエネルギーを付与することによって剥離を生ぜしめ、上記被転写体を上記第1の基板から上記仮転写基板へ転写する第3工程と、上記仮転写基板の一方面と第2の基板の一方面との相互間に接着材を介在させることによって、上記仮転写基板と上記第2の基板とを接合する第4工程と、上記仮転写基板の第2の剥離層にエネルギーを付与することによって当該剥離層を破壊する第5工程と、上記仮転写基板の複数の貫通孔を介して上記接着材に溶解用液体を供給することにより当該接着材を除去し、上記被転写体を上記仮転写基板から上記第2の基板へ転写する第6工程と、を含む。   Moreover, the manufacturing method of the thin film device using the temporary transfer substrate includes a first step of forming a transfer target on the one surface side of the first substrate having a first release layer on one surface side, and a second step. By interposing a liquid-soluble adhesive between one surface of the temporary transfer substrate having a plurality of through-holes covered with a release layer and one surface of the first substrate, the temporary transfer substrate and the above-mentioned A second step of bonding the first substrate, and peeling is caused by applying energy to the first peeling layer of the first substrate, and the transfer target is transferred from the first substrate to the temporary transfer. Bonding the temporary transfer substrate and the second substrate by interposing an adhesive between the third step of transferring to the substrate and the one surface of the temporary transfer substrate and the one surface of the second substrate Energy for the fourth release step and the second release layer of the temporary transfer substrate. And removing the adhesive material by supplying a dissolving liquid to the adhesive material through a plurality of through holes of the temporary transfer substrate. And a sixth step of transferring from the temporary transfer substrate to the second substrate.

かかる貫通孔を剥離層で閉じた仮転写基板を用いて薄膜デバイスの基板間の剥離転写を行うことによって、転写の際に薄膜デバイスの撓みや歪みを回避可能となり、薄膜装置製造の歩留まりが向上する。また、転写の際に仮転写基板の剥離層を破壊することで仮接着剤を貫通孔内に曝すことによって接着剤の除去時間の短縮を図ることが可能となる。   By using the temporary transfer substrate with the through-holes closed with a release layer, peeling transfer between thin film device substrates can be avoided during the transfer, and the yield of thin film device manufacturing can be improved. To do. In addition, it is possible to shorten the time for removing the adhesive by exposing the temporary adhesive to the inside of the through-hole by destroying the release layer of the temporary transfer substrate during the transfer.

好ましくは、上記第6の工程を上記溶解用液体中(浸漬)で行う。それにより、仮転写基板の複数の貫通孔のみならず、当該基板の外周側からも接着剤の溶解が進行し、プロセス時間をより短縮することが可能となる。する。   Preferably, the sixth step is performed in the dissolving liquid (immersion). Thereby, the dissolution of the adhesive proceeds not only from the plurality of through holes of the temporary transfer substrate but also from the outer peripheral side of the substrate, and the process time can be further shortened. To do.

また、本発明の電子機器は、上述した仮転写基板を使用した薄膜デバイスの製造方法によって製造される薄膜デバイスを含むことを特徴とする。より信頼性の高い剥離転写技術で製作された薄膜デバイスを用いた電子機器は、信頼性の向上を期待できる。   In addition, an electronic apparatus according to the present invention includes a thin film device manufactured by the thin film device manufacturing method using the temporary transfer substrate described above. An electronic device using a thin film device manufactured by a more reliable peeling transfer technology can be expected to improve reliability.

以下、本発明の実施の形態について図面を参照しながら説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図1は、本発明の仮転写基板を説明する説明図である。同図(A)は平面図、同図(B)は、同図(A)のA−A’方向における断面図を示している。   FIG. 1 is an explanatory view for explaining a temporary transfer substrate of the present invention. FIG. 4A is a plan view, and FIG. 4B is a cross-sectional view in the A-A ′ direction of FIG.

図1に示すように、仮転写基板22には、仮転写基板22を貫通する複数の孔22aが設けられており、更に、各貫通孔22aを覆う剥離層24が仮転写基板22の一面側全体に形成されている。   As shown in FIG. 1, the temporary transfer substrate 22 is provided with a plurality of holes 22 a penetrating the temporary transfer substrate 22, and a release layer 24 covering each through hole 22 a is provided on one surface side of the temporary transfer substrate 22. It is formed throughout.

仮転写基板22としては、特段の耐熱性を有する必要がないため、ガラス基板やプラスチック基板など種々のものを用いることができる。後の工程において、仮転写基板22を介して剥離層24に(光)エネルギーを付与するため、仮転写基板22は透明な材質のものを使用する。   Since the temporary transfer substrate 22 does not need to have special heat resistance, various substrates such as a glass substrate and a plastic substrate can be used. In a later step, in order to impart (light) energy to the release layer 24 via the temporary transfer substrate 22, the temporary transfer substrate 22 is made of a transparent material.

また、仮転写基板16の各貫通孔20は、図1に示すように、仮転写基板22全体に均等に配列されている。各貫通孔20の径及び数については適宜決定すればよいが、例えば、孔の直径は1μm程度に設定される。   Further, the through holes 20 of the temporary transfer substrate 16 are evenly arranged on the entire temporary transfer substrate 22 as shown in FIG. The diameter and number of each through hole 20 may be determined as appropriate. For example, the diameter of the hole is set to about 1 μm.

剥離層24は、エネルギーが付与されると破壊する膜であり、例えば、アモルファスシリコン膜等の半導体膜、金属膜、有機高分子膜、セラミックスなどによって形成することが可能である。   The peeling layer 24 is a film that breaks when energy is applied, and can be formed of, for example, a semiconductor film such as an amorphous silicon film, a metal film, an organic polymer film, or ceramics.

図1に示すような仮転写基板は、ガラス等の基板22にCVD法等によってアモルファスシリコンを堆積して剥離層24を成膜し、図示しない貫通孔群に対応したマスクを用いて基板22を剥離層24まで異方性エッチング又は切削、超音波等の機械加工、レーザー加工等の方法によって製作される。   In the temporary transfer substrate as shown in FIG. 1, amorphous silicon is deposited on a substrate 22 such as glass by CVD or the like to form a release layer 24, and the substrate 22 is attached using a mask corresponding to a through hole group (not shown). The release layer 24 is manufactured by methods such as anisotropic etching or cutting, machining such as ultrasonic waves, and laser processing.

次に、上述した仮転写基板を使用して薄膜デバイスを製造する例について図2及び図3を参照して説明する。本実施形態では、予め転写元基板(第1の基板)上に形成した被転写体を一旦、仮転写基板によって保持した後に転写先基板(第1の基板)へ移動させる2回転写プロセスについて説明する。   Next, an example of manufacturing a thin film device using the temporary transfer substrate described above will be described with reference to FIGS. In this embodiment, a two-time transfer process is described in which a transfer target formed in advance on a transfer source substrate (first substrate) is temporarily held by a temporary transfer substrate and then moved to a transfer destination substrate (first substrate). To do.

まず、図2(A)に示すように、転写元基板12の一方面側に剥離層14を形成する。転写元基板12としては、適度な厚さを有し、石英ガラスやソーダガラス等の耐熱性材料、例えば半導体装置のプロセス温度である350℃〜1000℃程度に耐えうるものが用いられる。また、転写元基板12は、後の工程で剥離層14に対するエネルギーの付与を光照射によって行うことが可能となるように、当該光の波長に対して透明であることが望ましい。また、剥離層14としては、光照射などのエネルギー付与を受けることによって剥離を生じる特性を有するものが用いられる。このような剥離層14は、例えばアモルファスシリコン膜等の半導体膜、金属膜、有機高分子、セラミックスなどによって形成することが可能である。   First, as shown in FIG. 2A, a release layer 14 is formed on one side of the transfer source substrate 12. As the transfer source substrate 12, a heat-resistant material such as quartz glass or soda glass, for example, a substrate that can withstand a process temperature of a semiconductor device of about 350 ° C. to 1000 ° C. is used. The transfer source substrate 12 is desirably transparent to the wavelength of the light so that energy can be applied to the release layer 14 by light irradiation in a later step. Moreover, as the peeling layer 14, what has the characteristic which produces peeling by receiving energy provision, such as light irradiation, is used. Such a release layer 14 can be formed of, for example, a semiconductor film such as an amorphous silicon film, a metal film, an organic polymer, ceramics, or the like.

図2(B)に示すように、剥離層14の上側に複数の被転写体14を形成する。各被転写体14は、例えば、複数の薄膜素子(例えば薄膜トランジスタ)や配線などを含んで構成されるものである。   As shown in FIG. 2B, a plurality of transfer objects 14 are formed above the release layer 14. Each transferred object 14 includes, for example, a plurality of thin film elements (for example, thin film transistors) and wiring.

更に、同図に示すように、複数の貫通孔22aを有する仮転写基板22の剥離層24側の面と転写元基板12の被転写体16側の面との相互間に水溶性接着材18を介在させることによって、仮転写基板22と転写元基板12とを接合する。   Further, as shown in the figure, the water-soluble adhesive 18 is provided between the surface on the release layer 24 side of the temporary transfer substrate 22 having a plurality of through-holes 22a and the surface on the transfer target 16 side of the transfer source substrate 12. By interposing, the temporary transfer substrate 22 and the transfer source substrate 12 are joined.

仮転写基板22としては、特段の耐熱性を有する必要がないため、ガラス基板、プラスチック基板など種々のものを用いることができる。また、仮転写基板22の各貫通孔22aの数、各貫通孔22aの径については適宜決定すれることができる。例えば、1μm程度に設定される。前述したように各貫通孔22aは剥離層24によって覆われて(閉じられて)いるので、貫通孔22aの開孔部分によって被転写体14の薄膜が撓むことが防止される。   Since the temporary transfer substrate 22 does not need to have special heat resistance, various substrates such as a glass substrate and a plastic substrate can be used. Further, the number of through holes 22a of the temporary transfer substrate 22 and the diameter of each through hole 22a can be determined as appropriate. For example, it is set to about 1 μm. As described above, since each through hole 22a is covered (closed) by the release layer 24, the thin film of the transfer target 14 is prevented from being bent by the opening portion of the through hole 22a.

図2(C)に示すように、転写元基板12の剥離層14にエネルギーを付与することによって剥離層14を破壊し、当該剥離層14と転写元基板12との界面又は剥離層層内に剥離を生じさせる。   As shown in FIG. 2 (C), the release layer 14 is destroyed by applying energy to the release layer 14 of the transfer source substrate 12, and the interface between the release layer 14 and the transfer source substrate 12 or in the release layer layer. Causes peeling.

具体的には、図示のように転写元基板12を介して剥離層14にレーザ光を照射して当該剥離層14にレーザアブレーションを生じさせる。アブレーションとは、照射される光を吸収した固体材料(剥離層12の構成材料)が光化学的または熱的に励起され、その表面や内部の原子または分子の結合が切断されて放出される状態であり、主に、剥離層12の構成材料の全部または一部が溶融、蒸散(気化)等の相変化を生じる現象として現れる。また、相変化によって微小な発泡状態となり、結合力が低下することもある。   Specifically, as shown in the figure, the release layer 14 is irradiated with laser light through the transfer source substrate 12 to cause laser ablation in the release layer 14. Ablation is a state in which a solid material that absorbs irradiated light (a constituent material of the release layer 12) is photochemically or thermally excited, and its surface and internal atomic or molecular bonds are cut and released. In general, all or part of the constituent material of the release layer 12 appears as a phenomenon that causes a phase change such as melting and transpiration (vaporization). In addition, a phase change may result in a fine foamed state, which may reduce the bonding force.

これにより、図2(D)に示すように、転写元基板12が分離されて、被転写体16が転写元基板12から仮転写基板22側に転写される。
次に、図3(A)に示すように、仮転写基板22の被転写体16が存在する一方面と転写先基板32の一方面との相互間に接着材34を介在させることによって、仮転写基板22と転写先基板32とを接合する。本工程において用いられる接着材34としては、反応硬化型接着剤、熱硬化型接着剤、紫外線硬化型接着剤等の光硬化性接着剤、嫌気硬化型接着剤等の各種硬化型接着剤が挙げられ、エポキシ、アクリレート、シリコーン樹脂系接着材などが挙げられる。
As a result, as shown in FIG. 2D, the transfer source substrate 12 is separated, and the transfer body 16 is transferred from the transfer source substrate 12 to the temporary transfer substrate 22 side.
Next, as shown in FIG. 3 (A), an adhesive 34 is interposed between one surface of the temporary transfer substrate 22 where the transfer target 16 is present and one surface of the transfer destination substrate 32, thereby temporarily The transfer substrate 22 and the transfer destination substrate 32 are joined. Examples of the adhesive 34 used in this step include various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic curable adhesive. And epoxy, acrylate, silicone resin adhesive, and the like.

図3(B)に示すように、仮転写基板22の被転写体16が存在しない面側から、剥離層24にエネルギーを付与して貫通孔22a部分の剥離層24に破壊を生じさせる。具体的には、転写元基板22を介して剥離層24にレーザ光を照射して当該剥離層24に上述したレーザアブレーションを生じさせる。それにより、各貫通孔22a部分を覆う剥離層24が除去される。   As shown in FIG. 3B, energy is applied to the release layer 24 from the side of the temporary transfer substrate 22 where the transfer target 16 does not exist, thereby causing the release layer 24 in the through-hole 22a portion to break. Specifically, the release layer 24 is irradiated with laser light through the transfer source substrate 22 to cause the laser ablation described above on the release layer 24. Thereby, the peeling layer 24 which covers each through-hole 22a part is removed.

次に、仮転写基板22に備わった各貫通孔22aのそれぞれを介して水溶性接着材18に溶解用液体としての水を供給することにより、当該水溶性接着材18を溶かす。併せて本例では、仮転写基板16と転写先基板24との接合体の外周から両者の隙間を伝わせて水溶性接着材18に水を供給することによっても、水溶性接着材18の溶解を進行させている。   Next, the water-soluble adhesive 18 is melted by supplying water as a dissolving liquid to the water-soluble adhesive 18 through each of the through holes 22 a provided in the temporary transfer substrate 22. In addition, in this example, the water-soluble adhesive 18 can also be dissolved by supplying water to the water-soluble adhesive 18 from the outer periphery of the joined body of the temporary transfer substrate 16 and the transfer destination substrate 24 through the gap between them. Is progressing.

図3(C)に示すように、本工程は、仮転写基板22と転写先基板32との接合体の全体を水槽42内の水44に浸すことによって行うことが望ましい。なお、仮転写基板16の他方面側のみを水に浸して行うようにしてもよい。また、水を加圧しつつ、仮転写基板22の他方面側から各貫通孔22aに導入するようにしてもよい。   As shown in FIG. 3C, this step is desirably performed by immersing the entire joined body of the temporary transfer substrate 22 and the transfer destination substrate 32 in water 44 in the water tank 42. Note that only the other surface side of the temporary transfer substrate 16 may be immersed in water. Alternatively, water may be introduced into each through hole 22a from the other surface side of the temporary transfer substrate 22 while being pressurized.

これら各経路(貫通孔)を介した水の供給によって水溶性接着材18が溶解し、除去されると、仮転写基板22が転写先基板32から分離される。   When the water-soluble adhesive 18 is dissolved and removed by supplying water through these paths (through holes), the temporary transfer substrate 22 is separated from the transfer destination substrate 32.

図3(D)に示すように、被転写体14が仮転写基板16から転写先基板32へ転写され、転写先基板(例えば、可撓性の樹脂基板)24上に被転写体が形成される。   As shown in FIG. 3D, the transfer target 14 is transferred from the temporary transfer substrate 16 to the transfer destination substrate 32, and the transfer target is formed on the transfer destination substrate (for example, a flexible resin substrate) 24. The

上述した剥離転写方法では、複数の貫通孔22aを有する仮転写基板22を用い、各貫通孔22aのそれぞれを介して水溶性接着材18に溶解用液体としての水を供給するようにしているので、水の侵入可能な開口面積を大きく確保して水を効率よく供給することが可能となる。したがって、水溶性接着材18の溶解に要する時間を大幅に短縮し、被転写体14の転写に要する処理時間を短縮することが可能となる。   In the above-described peeling transfer method, the temporary transfer substrate 22 having a plurality of through holes 22a is used, and water as a dissolving liquid is supplied to the water-soluble adhesive 18 through each of the through holes 22a. In addition, it is possible to efficiently supply water while ensuring a large opening area into which water can enter. Therefore, the time required for dissolving the water-soluble adhesive 18 can be greatly shortened, and the processing time required for transferring the transfer target 14 can be shortened.

加えて、本実施形態によれば、剥離層24によって貫通孔22aを閉じた仮転写基板22を使用する。これにより、貫通孔22aの閉じられていない仮転写基板22を使用した場合に生じ得る、被転写体(薄膜デバイス、薄膜回路、薄膜回路層等)と仮転写基板との密着性の低下などに起因する被転写体の撓みや歪みの発生を回避可能となる。   In addition, according to the present embodiment, the temporary transfer substrate 22 in which the through hole 22a is closed by the release layer 24 is used. Thereby, when the temporary transfer substrate 22 in which the through hole 22a is not closed is used, the adhesion between the transfer target (thin film device, thin film circuit, thin film circuit layer, etc.) and the temporary transfer substrate is reduced. It is possible to avoid the occurrence of bending and distortion of the transferred object.

次に、上述した製造方法によって製造される薄膜デバイスを備える電子機器の例について説明する。本実施形態にかかる薄膜デバイスは、各種の電子機器において、表示部を構成する液晶表示パネルやエレクトロルミネッセンス表示パネルなどの製造や、回路部の製造などに適用することができる。   Next, an example of an electronic apparatus including a thin film device manufactured by the manufacturing method described above will be described. The thin film device according to the present embodiment can be applied to the manufacture of a liquid crystal display panel, an electroluminescence display panel, and the like that constitute a display unit, a circuit unit, and the like in various electronic devices.

図4は、電子機器の例を示す概略斜視図である。図4(A)は携帯電話への適用例であり、当該携帯電話530はアンテナ部531、音声出力部532、音声入力部533、操作部534、表示部535を備えている。   FIG. 4 is a schematic perspective view illustrating an example of an electronic device. FIG. 4A shows an application example to a mobile phone, and the mobile phone 530 includes an antenna portion 531, an audio output portion 532, an audio input portion 533, an operation portion 534, and a display portion 535.

図4(B)はビデオカメラへの適用例であり、当該ビデオカメラ540は受像部541、操作部542、音声入力部543、表示部544を備えている。   FIG. 4B shows an application example to a video camera. The video camera 540 includes an image receiving unit 541, an operation unit 542, an audio input unit 543, and a display unit 544.

図4(C)はテレビジョン装置への適用例であり、当該テレビジョン装置550は表示部551を備えている。   FIG. 4C illustrates an example of application to a television device. The television device 550 includes a display portion 551.

図4(D)はロールアップ式テレビジョン装置への適用例であり、当該ロールアップ式テレビジョン装置560は表示部561を備えている。また、本発明にかかる薄膜デバイスは、上述した例に限らず各種の電子機器に適用可能である。例えばこれらの他に、表示機能付きファックス装置、デジタルカメラのファインダ、携帯型TV、電子手帳、電光掲示盤、宣伝公告用ディスプレイなどにも活用することができる。   FIG. 4D illustrates an application example to a roll-up television device, and the roll-up television device 560 includes a display portion 561. Further, the thin film device according to the present invention is not limited to the above-described example, and can be applied to various electronic devices. For example, in addition to these, it can also be used for a fax machine with a display function, a finder for a digital camera, a portable TV, an electronic notebook, an electric bulletin board, a display for advertisements, and the like.

なお、本発明は上述した実施形態の内容に限定されることなく、本発明の要旨の範囲内で種々に変形実施が可能である。   The present invention is not limited to the contents of the above-described embodiments, and various modifications can be made within the scope of the gist of the present invention.

例えば、仮転写基板における貫通孔22aの数、大きさ、分布を転写元基板上の被転写体の配置パターンに対応させることが出来る。
また、上述した実施形態では、液体溶解性の接着材の一例として水溶性接着材、溶解用液体として水を用いた場合について説明していたが、本発明の適用範囲はこれに限定されるものではなく、事後的に何らかの液体を用いて溶解・除去することが可能な接着材であればいかなるものも液体溶解性の接着材として採用し得る。
For example, the number, size, and distribution of the through holes 22a in the temporary transfer substrate can be made to correspond to the arrangement pattern of the transfer object on the transfer source substrate.
In the above-described embodiment, the case where a water-soluble adhesive is used as an example of a liquid-soluble adhesive and water is used as a dissolving liquid has been described. However, the scope of application of the present invention is limited to this. Instead, any adhesive that can be dissolved and removed using some liquid later can be used as the liquid-soluble adhesive.

図1は、本発明の実施例の仮転写基板を説明する説明図である。FIG. 1 is an explanatory view illustrating a temporary transfer substrate according to an embodiment of the present invention. 図2は、本発明の実施例の仮転写基板を使用した薄膜デバイスの製造方法を説明する工程図である。FIG. 2 is a process diagram for explaining a method of manufacturing a thin film device using the temporary transfer substrate according to the embodiment of the present invention. 図3は、本発明の実施例の仮転写基板を使用した薄膜デバイスの製造方法を説明する工程図である。FIG. 3 is a process diagram for explaining a method of manufacturing a thin film device using the temporary transfer substrate according to the embodiment of the present invention. 薄膜デバイスを使用した電子機器の例を説明する説明図である。It is explanatory drawing explaining the example of the electronic device using a thin film device.

符号の説明Explanation of symbols

12 転写元基板、16 被転写体、22 仮転写基板、22a 貫通孔、24 剥離層、32 転写先基板

12 Transfer source substrate, 16 Transfer object, 22 Temporary transfer substrate, 22a Through hole, 24 Release layer, 32 Transfer destination substrate

Claims (6)

第1の基板上に作製された被転写体を剥離して第2の基板上に移動するときに、前記被転写体を一時的に保持するために用いられる仮転写基板であって、
一方面とこれに対向する他方面とを貫通する複数の貫通孔を有する基板と、
前記基板の一方面上に配置されて各貫通孔を覆い、外部からのエネルギー付与によって破壊される剥離層と、
を含むことを特徴とする仮転写基板。
A temporary transfer substrate used for temporarily holding the transferred object when the transferred object manufactured on the first substrate is peeled off and moved onto the second substrate,
A substrate having a plurality of through holes penetrating one side and the other side opposite to the one side;
A release layer disposed on one side of the substrate to cover each through-hole and to be destroyed by external energy application;
A temporary transfer substrate comprising:
前記基板は透光性基板、前記外部エネルギーは光である、請求項1に記載の仮転写基板。   The temporary transfer substrate according to claim 1, wherein the substrate is a light-transmitting substrate and the external energy is light. 前記被転写体が薄膜素子又は薄膜回路である、請求項1又は2に記載の仮転写基板。   The temporary transfer substrate according to claim 1, wherein the transfer target is a thin film element or a thin film circuit. 一方面側に第1の剥離層を有する第1の基板の当該一方面側に被転写体を形成する第1工程と、
第2の剥離層によって覆われた複数の貫通孔を有する仮転写基板の一方面と前記第1の基板の一方面との相互間に液体溶解性の接着材を介在させることによって、前記仮転写基板と前記第1の基板とを接合する第2工程と、
前記第1の基板の第1の剥離層にエネルギーを付与することによって剥離を生ぜしめ、前記被転写体を前記第1の基板から前記仮転写基板へ転写する第3工程と、
前記仮転写基板の一方面と第2の基板の一方面との相互間に接着材を介在させることによって、前記仮転写基板と前記第2の基板とを接合する第4工程と、
前記仮転写基板の第2の剥離層にエネルギーを付与することによって当該剥離層を破壊する第5工程と、
前記仮転写基板の複数の貫通孔を介して前記接着材に溶解用液体を供給することにより当該接着材を除去し、前記被転写体を前記仮転写基板から前記第2の基板へ転写する第6工程と、
を含む、仮転写基板を使用した薄膜デバイスの製造方法。
A first step of forming a transfer object on the one surface side of the first substrate having a first release layer on one surface side;
The temporary transfer is performed by interposing a liquid-soluble adhesive between one surface of the temporary transfer substrate having a plurality of through-holes covered with the second release layer and one surface of the first substrate. A second step of bonding the substrate and the first substrate;
A third step of causing peeling by applying energy to the first peeling layer of the first substrate, and transferring the transferred object from the first substrate to the temporary transfer substrate;
A fourth step of bonding the temporary transfer substrate and the second substrate by interposing an adhesive between the one surface of the temporary transfer substrate and the one surface of the second substrate;
A fifth step of destroying the release layer by applying energy to the second release layer of the temporary transfer substrate;
The adhesive is removed by supplying a dissolving liquid to the adhesive through a plurality of through-holes in the temporary transfer substrate, and the transferred body is transferred from the temporary transfer substrate to the second substrate. 6 steps,
A method for manufacturing a thin film device using a temporary transfer substrate.
前記第6の工程を前記溶解用液体中で行う、請求項4に記載の仮転写基板を使用した薄膜デバイスの製造方法。   The method of manufacturing a thin film device using the temporary transfer substrate according to claim 4, wherein the sixth step is performed in the dissolving liquid. 請求項4又は5に記載の仮転写基板を使用した薄膜デバイスの製造方法によって製造される薄膜デバイスを含んで構成される電子機器。

An electronic apparatus comprising a thin film device manufactured by a method for manufacturing a thin film device using the temporary transfer substrate according to claim 4.

JP2006019069A 2006-01-27 2006-01-27 Temporarily transcribing substrate, manufacturing method of thin-film device using same substrate, and electronic appliance Pending JP2007201249A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006019069A JP2007201249A (en) 2006-01-27 2006-01-27 Temporarily transcribing substrate, manufacturing method of thin-film device using same substrate, and electronic appliance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006019069A JP2007201249A (en) 2006-01-27 2006-01-27 Temporarily transcribing substrate, manufacturing method of thin-film device using same substrate, and electronic appliance

Publications (1)

Publication Number Publication Date
JP2007201249A true JP2007201249A (en) 2007-08-09

Family

ID=38455513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006019069A Pending JP2007201249A (en) 2006-01-27 2006-01-27 Temporarily transcribing substrate, manufacturing method of thin-film device using same substrate, and electronic appliance

Country Status (1)

Country Link
JP (1) JP2007201249A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786576B2 (en) 2007-02-06 2010-08-31 Seiko Epson Corporation Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786576B2 (en) 2007-02-06 2010-08-31 Seiko Epson Corporation Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus

Similar Documents

Publication Publication Date Title
TWI310207B (en) Thin film device supply body, method of fabricating thin film device, method of transfer, method of fabricating semiconductor device, and electronic equipment
JP5094776B2 (en) Method for manufacturing semiconductor device
TWI235421B (en) Method for manufacturing semiconductor, integrated circuit, electro-optic device and electronic instrument
WO2009119064A1 (en) Method for processing a substrate, method for manufacturing a semiconductor chip, and method for manufacturing a semiconductor chip having a resin adhesive layer
TWI234268B (en) Manufacturing method of thin film device, optoelectronic device, and electronic machine
JP7393469B2 (en) A board in which multiple parts are embedded and packaged multiple times and its manufacturing method
US10249527B2 (en) Method of manufacturing flexible display device
JP2008187094A (en) Manufacturing method of semiconductor device
JP2004047975A (en) Method of transferring laminate and method of manufacturing semiconductor device
JP5898949B2 (en) Method for manufacturing flexible device
JP2015064468A (en) Manufacturing method of display unit
JP5726110B2 (en) SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
TWI458406B (en) Method and apparatus for manufacturing flexible substrate
JP2009231533A (en) Peeling method, peeling apparatus and method of manufacturing semiconductor device
JP6371735B2 (en) Manufacturing method of semiconductor device
JP2005252242A5 (en)
JP2007201249A (en) Temporarily transcribing substrate, manufacturing method of thin-film device using same substrate, and electronic appliance
JP2006295049A (en) Process for producing thin film device, electronic apparatus
JP2006313827A (en) Method of manufacturing thin film device and electronic apparatus
US20140099432A1 (en) Fabrication method for flexible circuit board
JP2007088235A (en) Method of transferring thin film element, manufacturing method, method of manufacturing thin-film device, and electronic apparatus
JP2007311590A (en) Method for transcribing object to be transcribed, method for manufacturing semiconductor device, and transcribing device
JP2007012781A (en) Circuit board, manufacturing method thereof, and display apparatus
JP4711163B2 (en) Thin film device manufacturing method
JP2003068995A (en) Method for manufacturing thin film device substrate