JP2007287452A - Plasma device - Google Patents

Abstract

A plasma apparatus capable of expanding a region where heat treatment can be performed while suppressing power output to be small and capable of reliably performing heat treatment at a target treatment temperature.
A plasma apparatus 1 supplies a predetermined gas to a plasma generation space 21 and applies a voltage between a pair of plate-like members 23 and 24 via a pair of electrodes 25 and 26. A plasma is generated, the plasma is emitted toward the workpiece 100, and the surface 101 to be processed is heated, and a first temperature detecting means for detecting the temperature of the plasma and the temperature of the workpiece 100 are set. Based on at least one of the detected second temperature detecting means and the detection result of the first temperature detecting means and / or the second temperature detecting means, the processing temperature during the heating process becomes the target processing temperature. As described above, the power supply unit includes an adjusting unit that adjusts the magnitude of power supplied to the pair of electrodes 25 and 26.
[Selection] Figure 2

Description

  The present invention relates to a plasma apparatus for heat-treating a workpiece with plasma.

A plasma apparatus is known that generates thermal plasma by igniting a gas supplied into a discharge tube while applying an electric field by microwaves, and decomposes an organic halide by the thermal plasma (for example, (See Patent Document 1).
When such a plasma apparatus is applied to an apparatus that heat-treats the surface of a substrate (work) that is an object to be processed, there are the following problems.

First, since the thermal plasma is generated in the discharge tube, the range in which the thermal plasma can be supplied is limited, and the range in which the heat treatment can be performed is narrow.
Secondly, if the range in which heat treatment can be performed is increased, a large power output is required, and power consumption increases. In this case, the scale of equipment (apparatus) becomes large. For this reason, the cost which heat processing requires increases.

JP 2000-133494 A

  An object of the present invention is to provide a plasma apparatus capable of expanding a region where heat treatment can be performed while suppressing power supply output to be small, and capable of reliably performing heat treatment at a target treatment temperature.

Such an object is achieved by the present invention described below.
The plasma apparatus of the present invention is a plasma apparatus that processes a surface to be processed of the workpiece with plasma emitted from the plasma emission portion while relatively moving the plasma emission portion and the workpiece,
The plasma emission part is
It is made of a dielectric material, and is arranged in parallel to each other along a direction perpendicular to the moving direction of the workpiece with respect to the plasma emitting portion and perpendicular to the normal direction of the surface to be processed. A pair of long plate-like members to be formed;
Energization means having a pair of electrodes electrically connected to the pair of plate-like members, respectively, and a power supply unit for applying a voltage between the pair of electrodes;
Gas supply means for supplying a predetermined gas to the plasma generation space;
While supplying the gas to the plasma generation space, a voltage is applied between the pair of plate-like members via the pair of electrodes, thereby activating the gas in the plasma generation space to obtain a predetermined value. It is configured to generate a temperature plasma and discharge the plasma toward the workpiece to heat the surface to be processed of the workpiece.
At least one of first temperature detection means for detecting the temperature of the plasma and second temperature detection means for detecting the temperature of the workpiece;
Based on the detection result of the first temperature detecting means and / or the second temperature detecting means, the power supply unit applies the pair of electrodes to the processing temperature so that the processing temperature during the heat processing becomes a target processing temperature. And adjusting means for adjusting the magnitude of the supplied electric power.
As a result, it is possible to expand the region where the heat treatment can be performed while suppressing the power output to be small, and it is possible to reliably perform the heat treatment at the target processing temperature. In particular, the power supplied from the power supply unit to the pair of electrodes and the processing temperature during the heat treatment are in a substantially proportional relationship, and during the heat treatment, the processing temperature is adjusted by adjusting the power. The processing temperature can be easily and accurately controlled, and the processing temperature can be reliably set to the target processing temperature.

In the plasma apparatus of the present invention, the plasma emission part has a plasma emission port for emitting plasma,
The length A in the longitudinal direction of the plasma discharge port is preferably set to be equal to or longer than the length B in the width direction of the region to be processed of the workpiece.
As a result, the workpiece and the plasma emission part can be moved in one direction in the X direction (see FIG. 1) without reciprocating in the Y direction (see FIG. 1), and the entire region to be processed of the workpiece can be obtained. Heat treatment can be performed.

In the plasma apparatus of the present invention, the target processing temperature has a predetermined allowable temperature range,
The adjusting means is configured to adjust the magnitude of electric power supplied from the power supply unit to the pair of electrodes so that a processing temperature during the heat treatment falls within the allowable temperature range. preferable.
Thereby, the process temperature at the time of heat processing can be made into target process temperature easily and stably.

In the plasma apparatus of the present invention, when the detection value of the first temperature detection means is T ₁ and the detection value of the second temperature detection means is T ₂ , the adjustment means is a processing temperature during the heat treatment. It is preferable that T ₀ is obtained by the following formula 1 and the adjustment is performed.
T ₀ = αT ₁ + βT ₂ (Equation 1)
However, α and β in Equation 1 are positive coefficients other than 0, respectively.
As a result, the heat treatment can be more reliably performed at the target processing temperature.

In the plasma apparatus of the present invention, the coefficient α and the coefficient β are preferably determined in consideration of a workpiece condition including at least one of the workpiece type, composition, and characteristics.
Thereby, it is possible to more reliably heat-treat various workpieces at the target processing temperature.

In the plasma apparatus of the present invention, automatic coefficient determination for recognizing a workpiece condition including at least one of the type, composition and characteristics of the workpiece and determining the coefficient α and the coefficient β based on the workpiece condition, respectively. It is preferable to have a means.
Thereby, while being able to heat-process with respect to various workpiece | work more reliably at target process temperature, simplification of operation can be achieved.

In the plasma apparatus of the present invention, the adjusting means obtains a processing temperature during the heat treatment based on the detected value of the first temperature detecting means and the detected value of the second temperature detecting means, and performs the adjustment. Configured to do,
It is preferable to have a plurality of modes with different processing temperature determination methods during the heat treatment, and to select any mode from the plurality of modes.
Thereby, it is possible to more reliably heat-treat various workpieces at the target processing temperature.

In the plasma apparatus of the present invention, a mode for recognizing a workpiece condition including at least one of the type, composition and characteristics of the workpiece and selecting a predetermined mode from the plurality of modes based on the workpiece condition. It is preferable to have an automatic selection means.
Thereby, while being able to heat-process with respect to various workpiece | work more reliably at target process temperature, simplification of operation can be achieved.

In the plasma apparatus of the present invention, the plurality of modes include a first mode and a second mode,
When the detection value of the first temperature detection means is T ₁ and the detection value of the second temperature detection means is T ₂ , the adjustment means is a process at the time of the heat treatment in the first mode. It is preferable that the temperature T ₀ is obtained by the following formula 1, and in the second mode, the processing temperature T ₀ at the time of the heat treatment is obtained by the following formula 2.
T ₀ = αT ₁ + βT ₂ (Equation 1)
However, α and β in Equation 1 are positive coefficients other than 0, respectively.
T ₀ = γT ₁ (Expression 2)
However, γ in Equation 2 is a positive coefficient excluding 0.
Thereby, it is possible to more reliably heat-treat various workpieces at the target processing temperature.

In the plasma apparatus of the present invention, the coefficient α and the coefficient β are preferably determined in consideration of a workpiece condition including at least one of the workpiece type, composition, and characteristics.
Thereby, it is possible to more reliably heat-treat various workpieces at the target processing temperature.

In the plasma apparatus of the present invention, automatic coefficient determination for recognizing a workpiece condition including at least one of the type, composition and characteristics of the workpiece and determining the coefficient α and the coefficient β based on the workpiece condition, respectively. It is preferable to have a means.
Thereby, while being able to heat-process with respect to various workpiece | work more reliably at target process temperature, simplification of operation can be achieved.

In the plasma apparatus of the present invention, the coefficient γ is preferably determined in consideration of a workpiece condition including at least one of the workpiece type, composition, and characteristics.
Thereby, it is possible to more reliably heat-treat various workpieces at the target processing temperature.
In the plasma apparatus of the present invention, it is preferable that the automatic coefficient determination means is configured to recognize the workpiece condition and determine the coefficient γ based on the workpiece condition.
Thereby, while being able to heat-process with respect to various workpiece | work more reliably at target process temperature, simplification of operation can be achieved.

In the plasma apparatus of the present invention, the plurality of modes include a third mode,
In the third mode, the adjusting means is preferably configured to obtain a processing temperature T ₀ during the heat processing according to the following expression 3.
T ₀ = δT ₂ (Equation 3)
However, δ in Equation 3 is a positive coefficient excluding 0.
Thereby, it is possible to more reliably heat-treat various workpieces at the target processing temperature.

In the plasma apparatus of the present invention, the coefficient α and the coefficient β are each preferably 0.5.
As a result, the heat treatment can be more reliably performed at the target processing temperature.
In the plasma apparatus of the present invention, it is preferable that the power supply unit has a high frequency power supply having a frequency of 5 to 100 MHz.
Thereby, more reliable and sufficient plasma can be generated with a simple configuration.

In the plasma apparatus of the present invention, it is preferable to have a moving means for relatively moving the plasma emitting part and the workpiece.
Thereby, the work can be uniformly and efficiently heat-treated, which contributes to the improvement of productivity.
In the plasma apparatus of the present invention, it is preferable that the moving means has a function of adjusting a relative moving speed between the plasma emitting unit and the workpiece.
Thereby, the grade of the heat processing of a workpiece | work can be adjusted, the whole processing time (processing amount per unit time) can be adjusted, and the optimization of the heat processing with respect to a workpiece | work can be aimed at.

In the plasma apparatus of the present invention, it is preferable that a shielding unit is provided between the plasma emitting unit and the workpiece to shield an area from which plasma is emitted from an external environment.
Thereby, it is possible to prevent the plasma emitted from the plasma emission part from being lowered between the plasma emission part and the workpiece and the plasma temperature from being lowered and the plasma flow rate being lowered.

Hereinafter, the plasma apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
<First Embodiment>
FIG. 1 is a partial cross-sectional perspective view showing a first embodiment of the plasma device of the present invention, FIG. 2 is a vertical cross-sectional view schematically showing a plasma emission portion provided in the plasma device shown in FIG. 1, and FIG. FIG. 4 is a block diagram showing a circuit configuration of the plasma apparatus shown in FIG. 1.

  In FIG. 1, some members provided in the plasma emission part are omitted. In the following description, the upper side in FIGS. 1 and 2 is referred to as “upper” and the lower side is referred to as “lower”. In addition, as shown in FIGS. 1 to 3, an X axis (X direction), a Y axis (Y direction), and a Z axis (Z direction) orthogonal to each other are assumed. In this case, the X direction and the Y direction are horizontal directions, that is, the XY plane is a horizontal plane, and the Z direction is a vertical direction.

A plasma apparatus 1 shown in FIG. 1 generates (generates) plasma at a predetermined temperature, and heats (heat treatment) a surface (surface) 101 to be processed of a workpiece (for example, a substrate) 100 as an object to be processed. ).
Here, the greatest feature among the features (essential parts) of the present invention is the adjustment of electric power during the heat treatment. First, in order to facilitate understanding of the present invention, the configuration and operation of the plasma apparatus 1 are first described. The (action) will be explained.

As shown in FIG. 1, the plasma apparatus 1 includes a plasma emitting unit 2 positioned above the workpiece 100 (on the processing surface 101 side), and a table (movable table) that is positioned below the workpiece 100 and places the workpiece 100 thereon. ) 3 and a moving mechanism 4 for moving the table 3 in the X direction (left-right direction: horizontal direction) in FIG. 1 as a moving means for relatively moving the workpiece 100 (table 3) and the plasma emitting unit 2. I have.
And the heat processing with respect to the workpiece | work 100 is performed by moving the workpiece | work 100 with the table 3 to the X direction in FIG.

As shown in each figure, the plasma emission part 2 is arranged in parallel with each other, and a pair of long plate members 23 and 24 that form a plasma generation space 21 therebetween, and a pair of plate members. A pair of electrodes 25 and 26 arranged in parallel to each other via a pair 23 and 24, and a pair of electrodes 25 and 26 (a pair of plate-like members 23 and 24 via a pair of electrodes 25 and 26) A high-frequency power supply (power supply unit) 28 for applying a voltage (high-frequency voltage) to the plasma generation space 21 and a gas supply means 29 for supplying a predetermined gas to the plasma generation space 21.
The pair of long plate-like members 23 and 24 are opposed to each other along a direction perpendicular to the moving direction of the workpiece 100 (X direction in FIG. 1) and perpendicular to the normal direction of the surface 101 to be processed. Has been placed.

As shown in FIG. 3, side plates (a pair of side plates) 30, 30 are provided at both ends in the longitudinal direction of the pair of plate members 23, 24, and each plate-like member 23 is provided on each side plate 30. 24 are fixed.
Specifically, each side plate 30 is formed with a pair of grooves 301 and 302 that extend in the front-rear direction in FIG. 3 and are parallel to each other, and each plate-like member 23 is formed in each groove 301 and 302. , 24 are respectively inserted and fixed. As a result, the pair of plate-like members 23 and 24 are supported by the side plates 30 and 30 so as to maintain a constant distance at both ends thereof.

Examples of a method for fixing the plate-like members 23 and 24 to the side plates 30 include methods such as fitting, fusing, and adhesion using an adhesive.
A plasma generation space 21 is defined (formed) by the pair of plate-like members 23 and 24 and the pair of side plates 30. The plasma generation space 21 communicates with a gas reservoir 293 of a gas supply unit 29 described later above (base end side).

  On the other hand, the plasma generation space 21 is opened to the outside below (front end side), and a plasma emission port (front end opening) 211 is formed. Plasma generated in the plasma generation space 21 is released through the plasma discharge port 211. The plasma discharge port 211 is defined by the lower ends (tips) of the pair of plate-like members 23 and 24 and the lower ends (tips) of the pair of side plates 30.

  The length in the longitudinal direction of the plasma discharge port 211 (A in FIG. 3) is the width B (B in FIG. 1) of the region to be processed of the workpiece 100 (the region of the surface 101 to be heated) (the heating region). ) Is preferably set to the above, and more preferably set to be larger than the width B of the region to be processed. Thereby, the heat treatment can be performed on the entire region to be treated only by moving the workpiece 100 in one direction in the X direction without reciprocating in the Y direction perpendicular to the X direction. In the illustrated example, a case where the entire processing target surface 101 of the workpiece 100 is a processing target region is shown.

The specific value of the length A in the longitudinal direction of the plasma discharge port 211 is not particularly limited because it is determined according to the shape (length) of the object to be processed, but is not limited to the length of the object to be processed. On the other hand, it is preferable to lengthen about 5-20 mm. Thereby, this plasma apparatus 1 can be adapted to heat treatment in various manufacturing fields.
In the illustrated example, since the longitudinal ends of the plate members 23 and 24 are inserted into the grooves 301 and 302, respectively, the longitudinal lengths of the plate members 23 and 24 (in FIG. 3). L ₁ ) is slightly longer than the length A of the plasma emission port 211 in the longitudinal direction.

On the other hand, the length in the short direction (L _{2 in} FIG. 2) of each plate-like member 23, 24 is slightly different depending on the length L ₁ in the longitudinal direction and is not particularly limited, but is about 30 to 200 mm. Preferably, it is about 50-80 mm. Thereby, a sufficiently large plasma generation space 21 can be secured, and plasma necessary and sufficient for the heat treatment of the workpiece 100 can be generated.

  Further, the thickness d of each of the plate-like members 23 and 24 is not particularly limited, but is preferably about 0.01 to 4 mm, and more preferably about 1 to 2 mm. Thereby, an increase in impedance can be prevented, a desired discharge can be generated at a relatively low voltage, and plasma can be generated reliably. Further, it is possible to suitably prevent the occurrence of arc discharge by preventing dielectric breakdown during voltage application.

Distance between the plate-like members 23 and 24 (in FIG. 2 _{L 3)} is not particularly limited and is preferably about 0.1 to 5 mm, more preferably about 0.5 to 2 mm. As a result, a sufficient electric field can be applied to the gas supplied to the plasma generation space 21, and plasma can be generated reliably.
Each of these plate-like members 23 and 24 is made of a dielectric material.

The dielectric material is not particularly limited, and examples thereof include various plastics such as polytetrafluoroethylene and polyethylene terephthalate, various glasses such as quartz glass, and inorganic oxides. Examples of the inorganic oxide include metal oxides such as Al ₂ O ₃ , SiO ₂ , ZrO ₂ , and TiO ₂ , and composite oxides such as BaTiO ₃ (barium titanate).
Here, if a dielectric material having a relative dielectric constant of 10 or more at 25 ° C. is used as a constituent material of each of the plate-like members 23 and 24, a high-density plasma can be generated at a low voltage. There is an advantage that the processing efficiency of 100 is further improved.

Moreover, the upper limit of the relative dielectric constant of the usable dielectric material is not particularly limited, but those having a relative dielectric constant of about 10 to 100 are preferable. The dielectric material having a relative dielectric constant of 10 or more corresponds to a metal oxide such as ZrO ₂ or TiO ₂ or a composite oxide such as BaTiO ₃ .
The side plate 30 is also preferably made of a dielectric material similar to that of the plate-like members 23 and 24.

The pair of plate-like members 23 and 24 are provided with a pair of electrodes 25 and 26 that are electrically connected to each other.
In the present embodiment, the pair of electrodes 25 and 26 has a rod shape with a substantially square cross-sectional shape, and the plasma generation space 21 of the plate-like members 23 and 24 has one side surface substantially parallel to each other. It is fixed on the opposite surface.

Examples of the method for fixing the electrodes 25 and 26 to the plate-like members 23 and 24 include methods such as screwing and bonding with an adhesive.
The constituent materials of these electrodes 25 and 26 are not particularly limited. For example, simple metals such as copper, aluminum, iron and silver, various alloys such as stainless steel, brass and aluminum alloys, intermetallic compounds, and various carbon materials. Examples thereof include materials having good electrical conductivity.
Note that the cross-sectional shape of each of the electrodes 25 and 26 is not limited to the square shape described above, and may be, for example, a circle, an ellipse, or other irregular shapes. Further, a plurality of pairs of electrodes may be provided along the short direction (vertical direction) of the plate-like members 23 and 24.

  The pair of electrodes 25 and 26 is connected to a high-frequency power source (power supply unit) 28 via a conducting wire (cable or metal plate), respectively, whereby a voltage (high-frequency) is connected between the pair of electrodes 25 and 26. An energizing means for applying a voltage is configured. Thereby, discharge can be generated in the plasma generation space 21 with a simple configuration. The high-frequency power source 28 has a power adjusting unit whose operation (drive) is controlled by a control unit (control means) 7 described later, and a pair of electrodes 25 is controlled by the control (command) of the control unit 7. , 26 can be varied (changed) in magnitude (power value).

  When the workpiece 100 is subjected to a heat treatment by plasma, the high frequency power supply 28 is activated and a voltage is applied between the pair of electrodes 25 and 26. At this time, an electric field is generated in the plasma generation space 21, and when gas is supplied from a gas supply unit 29 described later, discharge occurs and plasma (thermal plasma) at a predetermined temperature is generated (generated). This plasma is discharged from the plasma discharge port 211 and supplied to the surface to be processed 101 of the workpiece 100, so that the workpiece 100 is heated.

The frequency of the high frequency power supply 28 is not particularly limited, but is preferably about 5 to 100 MHz, more preferably about 10 to 50 MHz, and further preferably about 10 to 40 MHz.
A predetermined gas is supplied to the plasma generation space 21 by the gas supply means 29.
The gas supply means 29 includes a gas cylinder (gas supply source) 291 that is charged and supplied with a predetermined gas, a regulator (flow rate adjusting unit) 292 that adjusts the flow rate of the gas supplied from the gas cylinder 291, and a gas reservoir 293 inside. And a supply pipe 295 whose upstream end side is connected to the gas cylinder 291 and whose downstream end side (gas outlet) is installed on the upper surface of the casing 294.

  The regulator 292 is disposed on the gas outlet side (downstream side) from the gas cylinder 291. Further, a valve (channel opening / closing means) 296 that opens and closes the flow path in the supply pipe 295 is provided on the gas outlet side of the supply pipe 295 from the regulator 292. The operation (drive) of the regulator 292 and the valve 296 is controlled by the control unit 7.

A predetermined gas is sent out from the gas cylinder 291 in a state where the valve 296 is opened, and this gas flows in the supply pipe 295 and is adjusted at the flow rate by the regulator 292 and then formed at the downstream end of the supply pipe 295. The gas is introduced (supplied) from the gas outlet 297 to the gas reservoir 293 in the housing 294.
A pair of plate-like members 23 and 24 are joined (fixed) to the lower portion of the housing 294. Examples of a method for fixing the plate-like members 23 and 24 to the housing 294 include methods such as screwing, fusion, and adhesion using an adhesive.
A gas outlet 297 of the supply pipe 295 is formed at substantially the center of the upper surface of the housing 294. The gas flowing through the supply pipe 295 is supplied into the gas reservoir 293 from the gas outlet 297.

An opening 299 that opens to the plasma generation space 21 is formed on the lower surface of the housing 294, and the gas reservoir 293 and the plasma generation space 21 of the housing 294 communicate with each other through the opening 299. ing.
A long partition plate 298 for partitioning a part of the gas reservoir 293 into an upper and lower space is provided on one inner side surface of the housing 294, and between this partition plate 298 and the other inner side surface. A gap is formed.

The gas supplied from the gas outlet 297 into the gas reservoir 293 first flows into the space above the partition plate 298, passes through the gap between the partition plate 298 and the other side surface, and enters the lower space. Flow into. In the gas reservoir 293, the gas flows in such a path (flow path), so that the flow velocity becomes uniform in each part. The gas flowing into the lower space passes through the opening 299 and is introduced (supplied) into the plasma generation space 21 at a uniform flow rate.
As the gas (treatment gas) used for the treatment, a gas mainly containing an inert gas (rare gas) such as He, Ne, Ar, Xe or a mixed gas thereof is preferably used. By using the plasma of the inert gas, the heat treatment can be performed while preventing inconvenience such as the surface to be processed 101 of the workpiece 100 being modified.

In addition, the processing gas preferably contains N ₂ (nitrogen gas). Thereby, plasma (thermal plasma) can be generated more reliably.
In this case, the content of N _{2 in} the processing gas is not particularly limited, but is preferably 10 vol% or less, more preferably 5 vol% or less at normal pressure (in terms of 1 atmospheric pressure). Accordingly, it is possible to generate plasma more quickly (efficiently) while preventing inconveniences such as modification of the processing target surface 101 of the workpiece 100.
The flow rate of the gas to be supplied is appropriately determined according to the type of gas, the degree of heat treatment, etc., and is not particularly limited, but it is usually preferably about 30 SCCM to 50 SLM.

  A predetermined gas is supplied from the gas supply means 29 between the pair of plate-like members 23 and 24 (plasma generation space 21), and a predetermined voltage, for example, a high-frequency voltage (between the pair of electrodes 25 and 26). When a voltage is applied, an electric field is generated in the plasma generation space 21, and discharge, that is, glow discharge (barrier discharge) occurs. The gas supplied by this discharge is activated (ionization, ionization, excitation, etc.), and plasma is generated. Plasma generated in the plasma generation space 21 is emitted from the plasma emission port 211 toward the workpiece 100.

A table 3 is disposed below the plasma emission unit 2. The table 3 has a flat upper surface, and the workpiece 100 is placed on the upper surface.
The constituent material of the table 3 is not particularly limited, and examples thereof include plastics such as polytetrafluoroethylene and polyethylene terephthalate, various glasses such as quartz glass, and various inorganic oxides (ceramics) such as the metal oxide and composite oxide. In this embodiment, the table 3 is made of a material other than the metal material.

Such a table 3 is moved in the X direction (left-right direction) in FIG. 1 by a moving mechanism (moving means) 4 provided below, and the workpiece 100 placed by the movement of the table 3 is also moved. Move in the same direction. The operation (drive) of the moving mechanism 4 is controlled by the control unit 7.
As the moving mechanism 4, any known configuration may be used, and examples thereof include a conveyor (belt drive, chain drive, etc.), a feed mechanism having a screw shaft, and a roller feed mechanism.

  Further, it is preferable that the moving mechanism 4 can adjust the moving speed (the relative moving speed between the plasma emitting unit 2 and the workpiece 100). As a result, the degree of the heat treatment of the workpiece 100 can be adjusted, and the overall processing time (processing amount per unit time) can be adjusted, so that the heat treatment for the workpiece 100 can be optimized. For example, when other conditions are fixed and the relative movement speed (processing speed) of the workpiece 100 with respect to the plasma emitting unit 2 is decreased, the degree of heat treatment (density) of the workpiece 100 is increased. Dense heat treatment can be performed.

In the present invention, the table 3 side may be fixed and the plasma emission unit 2 side may move in the X direction.
Examples of the purpose of the heat treatment include drying of the liquid film, polymerization reaction of monomers in the film, cross-linking reaction of the polymer, phase change of crystals, and the like.
Examples of the workpiece 100 subjected to the heat treatment by the plasma apparatus 1 include various glasses such as quartz glass and non-alkali glass, various ceramics such as alumina, silica, and titania, various semiconductor materials such as silicon and gallium-arsenic, polyethylene, and the like. , Polypropylene, polystyrene, polycarbonate, polyethylene terephthalate, polytetrafluoroethylene, polyimide, liquid crystal polymer, phenol resin, epoxy resin, acrylic resin, and other dielectric materials such as plastics (resin materials). Furthermore, the thing etc. with which the liquid film containing a volatile solvent etc. were formed on the base material comprised by these materials are mentioned.

Examples of the shape of the workpiece 100 include a plate shape (substrate), a layer shape, and a film shape. The workpiece 100 may be a single large substrate or a plurality of small pieces. Examples of the workpiece 100 having such a small piece include a display panel, a small piece of glass chip, a semiconductor chip, and a ceramic chip used for a liquid crystal display device, an organic EL display device, and the like.
Further, the shape of the workpiece 100 (the shape in plan view) is not limited to a rectangular shape, and may be, for example, a circular shape or an elliptical shape.
Although the thickness of the workpiece | work 100 is not specifically limited, Usually, it is preferable that it is about 0.3-2.0 mm, and it is more preferable that it is about 0.5-0.7 mm.

  The gap distance between the plasma emission part 2 and the workpiece 100 (the distance between the lower surfaces of the plate-like members 23 and 24 and the surface to be processed 101 of the workpiece 100) is not particularly limited, and can be appropriately determined according to various conditions. However, usually, it is preferably about 0.5 to 10 mm, and more preferably about 0.5 to 5 mm. Thereby, the plasma emitted from the plasma emission port 211 can be irradiated (supplied) to the surface 101 of the workpiece 100 without unevenness, and the surface 101 of the workpiece can be uniformly heated.

Note that the gap distance between the plasma emitting portion 2 and the workpiece 100 is one of the important conditions for performing processing with a uniform and appropriate plasma on the surface to be processed 101 (type of gas, flow rate, power to be supplied). The same applies to (applied voltage).
Therefore, in the present plasma apparatus 1, for example, at least one of the plasma emission part 2 or the table 3 can be moved in the Z direction (vertical direction: vertical direction), and the gap distance between the plasma emission part 2 and the workpiece 100 can be adjusted. A configuration is preferred.

Next, the operation (operation) of the plasma apparatus 1 will be described.
When the surface to be processed 101 of the workpiece 100 placed (supported) on the table 3 is subjected to heat treatment with plasma, the high frequency power supply 28 is operated, the valve 296 is opened, the gas flow rate is adjusted by the regulator 292, Gas is sent out from the gas cylinder 291.
As a result, the gas sent from the gas cylinder 291 flows through the supply pipe 295 and is supplied from the gas outlet 297 to the gas reservoir 293 at a predetermined flow rate. Then, the gas supplied to the gas reservoir 293 passes through the gas reservoir 293 so that the flow velocity becomes uniform in each part, passes through the open portion 299, and is supplied into the plasma generation space 21.

On the other hand, by the operation of the high frequency power supply 28, a high frequency voltage is applied between the pair of electrodes 25 and 26, and an electric field is generated in the plasma generation space 21.
The gas flowing into the plasma generation space 21 is activated by the discharge, and plasma is generated.
This plasma is emitted from the plasma emission port 211 toward the surface to be processed 101 of the workpiece 100.

On the other hand, at the same time, the moving mechanism 4 is operated to move the table 3 at a constant speed, for example, in the X direction in FIG. As a result, when the workpiece 100 passes directly below the plasma emission port 211, the emitted plasma (activated gas) comes into contact with the surface to be processed 101 of the workpiece 100, and is uniform on the surface to be processed 101. Good heat treatment is applied.
By moving the table 3, uniform and good heat treatment can be performed on the entire region to be processed of the workpiece 100.

The moving speed of the table 3 is preferably about 0.1 to 100 mm / sec, and more preferably about 1 to 10 mm / sec. You may make it change this moving speed as needed.
Note that the number of times of heat treatment (pass number of times) for the surface to be processed 101 of the workpiece 100 is not particularly limited (may be one time or multiple times), and may be appropriately set according to various conditions.
Moreover, this plasma apparatus 1 can be used suitably, for example, when performing heat processing at the processing temperature (temperature) of about 100-500 degreeC, especially the processing temperature of about 200-450 degreeC.

As shown in FIGS. 2 and 4, this plasma apparatus 1 includes a first temperature sensor (first temperature detection means) 81 that detects the temperature of the plasma, and a second temperature sensor that detects the temperature of the workpiece 100. (Second temperature detection means) 82, a control section (control means) 7, a storage section (storage means) 91, and an operation section (input means) 92 for performing various operations such as input.
The first temperature sensor 81 is installed on one plate-like member 24, and the second temperature sensor 82 is a lower surface (back surface) of the workpiece 100, that is, a surface opposite to the processing surface 101. Is installed.
As the first temperature sensor 81 and the second temperature sensor 82, for example, a thermocouple, a thermistor, or the like can be used.

Needless to say, the installation location (installation position) of the first temperature sensor 81 and the second temperature sensor 82 may be another site (position).
Further, as the operation unit 92, for example, a touch panel provided with a liquid crystal display panel, an EL display panel, or the like can be used. In this case, the operation unit 92 displays a display unit (displays) various types of information (notification). It also serves as a notification means).

  The storage unit 91 includes a storage medium (also referred to as a recording medium) in which various information, data, arithmetic expressions, tables, programs, and the like are stored (also referred to as a recording medium). Volatile memory such as RAM, nonvolatile memory such as ROM, rewritable (erasable and rewritable) nonvolatile memory such as EPROM, EEPROM, flash memory, etc., various semiconductor memories, IC memories, magnetic recording media, optical recording media And a magneto-optical recording medium. Control such as writing (storage), rewriting, erasing, and reading in the storage unit 91 is performed by the control unit 7.

In addition, the control unit 7 is configured by a computer such as a microcomputer or a personal computer that incorporates a calculation unit, a memory, or the like. The control unit 7 includes the first temperature sensor 81 and the second temperature sensor. A detection signal (detection value) from 82 and a signal (input) from the operation unit 92 are input as needed.
The control unit 7 operates each part of the plasma apparatus 1 according to a preset program based on detection signals from the first temperature sensor 81 and the second temperature sensor 82, a signal from the operation unit 92, and the like ( Drive), for example, controls the operation of the regulator 292, the valve 296, the high frequency power supply 28, the moving mechanism 4, and the like.
The control unit 7 achieves the main functions of the adjusting unit, the mode automatic selecting unit, and the coefficient automatic determining unit.

  In the plasma apparatus 1, the temperature of the plasma in the plasma generation space 21 is detected by the first temperature sensor 81 during the heat treatment under the control of the control unit 7, and the workpiece is detected by the second temperature sensor 82. 100 temperature is detected, and based on the detection values (detection results) of the first temperature sensor 81 and the second temperature sensor 82, the processing temperature at the time of the heat processing is obtained, and the processing temperature becomes the target processing temperature. As described above, the power supplied from the high frequency power supply 28 to the pair of electrodes 25 and 26 is adjusted. Thereby, heat processing can be reliably performed at the target processing temperature.

The target processing temperature T has a predetermined allowable temperature range T _min (lower limit value) to T _max (upper limit value), and during the heat treatment, the processing temperature is within the allowable temperature range T _{min to} T _max. The magnitude of the electric power supplied from the high frequency power supply 28 to the pair of electrodes 25 and 26 is adjusted so as to enter the inside.
As the allowable temperature range T _{min to} T _max , when T _{min to} T _max is T ± ΔT (T _min = T−ΔT, T _max = T + ΔT), the ΔT is about 0 to 10 ° C. Is preferable, and it is more preferable that it is about 1-5 degreeC.
Moreover, the plasma apparatus 1 has a plurality of modes different in how to obtain the processing temperature during the heat treatment, and is configured to be able to select one of the plurality of modes. Thereby, it is possible to more reliably heat the various workpieces 100 at the target processing temperature.

In the present embodiment, the following first mode, second mode, and third mode are provided as the plurality of modes.
In this case, when the detection value of the first temperature sensor 81 is T ₁ and the detection value of the second temperature sensor 82 is T ₂ , in the first mode, the processing temperature T ₀ during the heat treatment is expressed by the following equation: 1 (calculation formula), and in the second mode, the processing temperature T ₀ during the heat treatment is obtained by the following formula 2 (calculation formula). In the third mode, the processing temperature T ₀ during the heat treatment is calculated. It is comprised so that it may obtain | require by the following formula 3 (calculation formula).

(1) First mode T ₀ = αT ₁ + βT ₂ (Expression 1)
However, α and β in Equation 1 are positive coefficients other than 0, respectively.
(2) Second mode T ₀ = γT ₁ (Expression 2)
However, γ in Equation 2 is a positive coefficient excluding 0.
(3) Third mode T ₀ = δT ₂ (Equation 3)
However, δ in Equation 3 is a positive coefficient excluding 0.
These equations 1 to 3 are respectively stored (stored) in the storage unit 91, and the coefficients α, β, γ, and δ are determined in consideration of, for example, workpiece conditions.

Examples of the work conditions include the type, composition, and characteristics of the work 100, and the work conditions include at least one of these. Examples of the characteristics of the workpiece 100 include physical characteristics such as thermal conductivity of the workpiece 100, chemical characteristics, and the like.
For example, when the user operates the operation unit 92 and inputs the values of the coefficients α, β, γ, and δ, the coefficients α, β, γ, and δ are set to the input values, respectively. It has become so. Further, by operating the operation unit 92, a predetermined mode can be selected from the first to third modes.

Here, in Formula 1 of the first mode, for example, the coefficient β is preferably increased with respect to the coefficient α as the thermal conductivity of the workpiece 100 is lower.
Further, for example, in Equation 1, when the coefficients α and β are set to α = 0.5 and β = 0.5, the processing temperature T ₀ at the time of the heat processing is the detected value of the first temperature sensor 81, It becomes an average (average value) with the detection value of the second temperature sensor 82.

The second mode is a mode in which the second temperature sensor 82 is disabled, that is, the temperature of the workpiece 100 is detected by the second temperature sensor 82, or the detected value is not used even if the detection is performed. It is. This second mode is effective when used, for example, when the thermal conductivity of the workpiece 100 is low.
The third mode is a mode in which the first temperature sensor 81 is disabled, the temperature of the plasma is detected by the first temperature sensor 81, or the detection value is not used even if the detection is performed.

Here, in the present invention, the plasma apparatus 1 (control unit 7) recognizes the workpiece condition, and mode selection (setting) and determination (setting) of each coefficient α, β, γ, δ are automatically performed. You may be comprised so that it may be made. Thereby, while being able to heat-process with respect to various workpiece | work 100 more reliably at target process temperature, simplification of operation can be aimed at.
That is, in the present invention, when the user operates the operation unit 92 and inputs a work condition, the plasma apparatus 1 (the control unit 7) recognizes the work condition, and first to first based on the work condition. A predetermined mode (appropriate mode) may be selected from the third mode (plural modes) and set to that mode.

In the present invention, when the user operates the operation unit 92 and inputs a work condition, the plasma apparatus 1 (the control unit 7) recognizes the work condition, and based on the work condition, each coefficient α , Β, γ, and δ may be determined (set).
Further, in the above formula 1, when α = 0.5 and β = 0.5, the following formula 4 is obtained, and a mode for obtaining the processing temperature T ₀ during the heat treatment by the following formula 4 (calculation formula) is separately provided. The fourth mode may be provided.

(4) Fourth mode T ₀ = (T ₁ + T ₂ ) / 2 (Expression 4)
The fourth mode is a mode that takes the average (average value) of the detection value of the first temperature sensor 81 and the detection value of the second temperature sensor 82.
In the present invention, the number of modes is not limited to three or four, but may be two or five or more. Further, there may be one mode, that is, there is no room for selecting a mode.
Further, the contents of the mode are not limited to those described above, and other modes may be used.
Further, the mode may be added or deleted, and the mode content may be changed.

Next, the operation (temperature control) during the heat treatment of the plasma apparatus 1 will be described in more detail with reference to the flowcharts shown in FIGS.
Here, a program for realizing each function described in this flowchart is stored (stored) in the storage unit 91 of the plasma apparatus 1 in the form of a computer-readable program code, and the plasma apparatus 1 ( The control unit 7) sequentially executes operations according to the program code.

5 and 6 are flowcharts showing the control operation (action) during the heat treatment of the plasma apparatus shown in FIG.
When performing a heat treatment on the workpiece 100 (any time before the heat treatment is started), the user operates the operation unit 92 to select a predetermined one from the first to third modes. The mode is selected, the values of the coefficients α, β, γ, and δ are input, and the value of the target processing temperature T is input. Thereby, the mode, each coefficient α, β, γ, δ and the target processing temperature T are determined. Needless to say, it is not necessary to perform the above operation for those that have already been determined (set) and need not be changed.

As shown in FIG. 5, first, a mode is set (step S101). In step S101, the mode selected by the user is set.
Note that the method for selecting (determining) the mode and the method for determining the coefficients α, β, γ, and δ are not limited to those described above. For example, as described above, the user operates the operation unit 92. When the workpiece condition is input, the control unit 7 recognizes the workpiece condition, selects a predetermined mode based on the workpiece condition, and determines the coefficients α, β, γ, and δ. It may be.

Next, an allowable range T _{min to} T _max for the target processing temperature T is set (step S102).
Next, an initial value of power supplied from the high frequency power supply 28 is set (step S103).
In this case, for each mode, a table for obtaining an initial value (value) of power based on the target processing temperature T and a calibration curve such as an arithmetic expression (function) are stored (stored) in the storage unit 91 in advance. Then, using the calibration curve, the value of power is obtained, and this value is set as the initial value of power. The calibration curve can be obtained experimentally.

  Next, an initial value of power is instructed to the high frequency power supply 28 (step S104). As a result, the high frequency power supply 28 is activated, a voltage is applied between the pair of electrodes 25 and 26, and an electric field is generated in the plasma generation space 21. When gas is supplied from the gas supply means 29 to the plasma generation space 21, discharge occurs, plasma at a predetermined temperature is generated, and the plasma is emitted from the emission port 211.

Then, as shown in FIG. 6, the first temperature sensor 81 detects the temperature _{T 1} of the plasma (step S105), by the second temperature sensor 82 detects a temperature _{T 2} of the workpiece 100 (step S106 ).
Next, the current processing temperature T ₀ is obtained based on the detected plasma temperature T ₁ and the workpiece temperature T ₂ (step S107).

In step S107, the select an arithmetic expression that corresponds to the mode from among the type 1 type 3, in the calculation equation, plasma or the temperature T ₁ of the, by substituting the temperature T ₂ of the workpiece 100, the treatment temperature T ₀ is calculated. That is, in the case of the first mode, Equation 1 is used, in the case of the second mode, Equation 2 is used, and in the case of the third mode, Equation 3 is used.
In the case of the second mode, the process of step S106 of detecting a temperature _{T 2} of the workpiece 100 by the second temperature sensor 82, is omitted.
In the case of the third mode, the process of step S105 of detecting a temperature T ₁ of the plasma by the first temperature sensor 81 is omitted.

Then, the processing temperature _{T 0} determined in step S107 it is determined whether the entered target treatment temperature T in the allowed range _T min _{through T max} (step S108).
In step S108, the update processing temperature _{T 0} is, if not in the target treatment temperature T in the allowed range _T min _{through T max} ( "NO" in step S108), the power value of the supplied high-frequency power source 28 (Step S109).

In step S109, the processing temperature T ₀ is lower than the allowable range T _min through T _max of the target treatment temperature T increases the processing temperature by increasing the power, Conversely, if high, and reducing the power Reduce the processing temperature.
In this case, based on the target processing temperature T, the detected processing temperature T _0, and the currently set value of power (current power value), an appropriate power value (the processing temperature T ₀ becomes the target processing temperature T). A calibration curve such as a table for calculating (value estimated to be) and an arithmetic expression (function) is stored (stored) in the storage unit 91 in advance, and an appropriate power value is calculated using the calibration curve. Obtain and update to this value. The calibration curve can be obtained experimentally.

Next, the high-frequency power supply 28 is instructed with the updated power value (step S110), and the process proceeds to step S111.
On the other hand, when the processing temperature T ₀ is within the allowable range T _{min to} T _{max of the} target processing temperature T in step S108 (“YES” in step S108), the value of power supplied from the high frequency power supply 28 Is maintained as it is, and the process proceeds to step S111.

In step S111, it is determined whether or not the heating process has been completed. If the heating process has not been completed, the process returns to step S105, and step S105 and subsequent steps are executed again. During the heat treatment, the routine of steps S105 to S111 is repeatedly executed, whereby the heat treatment is performed at a temperature within the allowable range T _{min to} T _max of the target treatment temperature T.
On the other hand, in step S111, when the heating process is finished, this program is finished.

As described above, according to the plasma apparatus 1, the heat treatment can be reliably performed at the target processing temperature. In particular, the power supplied from the high frequency power supply 28 to the pair of electrodes 25 and 26 and the processing temperature at the time of the heat treatment are approximately proportional to each other. During the heat treatment, the processing temperature is adjusted by adjusting the power. Since the adjustment is performed, the processing temperature can be easily and accurately controlled, and the processing temperature can be reliably set to the target processing temperature.
Moreover, since the plasma apparatus 1 has the above-described structure, it is possible to widen a region where the heat treatment can be performed while suppressing the power output.

Second Embodiment
FIG. 7 is a longitudinal sectional view schematically showing a plasma emission part in the second embodiment of the plasma apparatus of the present invention.
In the following description, the upper side in FIG. 7 is referred to as “upper” and the lower side is referred to as “lower”. Further, as shown in FIG. 7, similarly to the first embodiment described above, an X axis (X direction), a Y axis (Y direction), and a Z axis (Z direction) that are orthogonal to each other are assumed.

Hereinafter, the plasma apparatus according to the second embodiment will be described with a focus on differences from the first embodiment described above, and description of similar matters will be omitted.
As shown in FIG. 7, in the plasma apparatus 1 of the second embodiment, the plasma emission unit 2 includes a cooling means 5 that cools the pair of electrodes 25 and 26, and a plasma between the plasma emission unit 2 and the workpiece 100. And a shielding means (isolation means) 6 for shielding the area from which the gas is released from the external environment.

The cooling means 5 includes covers 51 and 52 that cover (accommodate) the electrodes 25 and 26, a refrigerant (for example, water) 53 supplied into the covers 51 and 52, and the refrigerant 53 in the covers 51 and 52. And a refrigerant supply means (not shown) for supplying.
The covers 51 and 52 are liquid-tightly fixed to the plate-like members 23 and 24. As a method of fixing the covers 51 and 52 to the plate-like members 23 and 24, the fixing method as described above can be used.
By providing such a cooling means 5, the electrodes 25, 26 can be cooled, the electrodes 25, 26 are heated more than necessary, and the thermal expansion coefficient between the plate-like members 23, 24 and the electrodes 25, 26 is increased. Due to the difference, it is possible to suitably prevent the electrodes 25 and 26 from falling off the plate-like members 23 and 24 and the plate-like members 23 and 24 and the electrodes 25 and 26 from being damaged.

On the other hand, the shielding means 6 includes long shielding plates 61 and 62 provided at the ends of the plate members 23 and 24 on the workpiece 100 side, and side plates 60 and 60 that fix both end portions of the shielding plates 61 and 62. And have.
Each side plate 60 has the same configuration as the side plate 30 and fixes and supports the shielding plates 61 and 62 in the same manner as the plate-like members 23 and 24.

Further, as a method for fixing the shielding plates 61 and 62 to the plate-like members 23 and 24, the fixing method as described above can be used.
As the constituent materials of the shielding plates 61 and 62 and the side plates 60, the dielectric materials as described above are preferably used.
By providing such an isolating means 6, it is possible to suppress the attenuation of the plasma emitted from the plasma emitting unit 2 by being exposed to the atmosphere (air) or the like between the plasma emitting unit 2 and the workpiece 100. The plasma can be prevented from diffusing to the outside environment. That is, it is possible to prevent the plasma emitted from the plasma emitting unit 2 from being lowered between the plasma emitting unit 2 and the workpiece 100, and the plasma flow rate can be prevented from being lowered. 62 functions as a heat insulating plate.

For this reason, the workpiece 100 can be more reliably heat-treated with plasma, the control responsiveness can be improved during the heat treatment, and the processing time of the workpiece 100 can be shortened.
As mentioned above, although the plasma apparatus of this invention was demonstrated based on embodiment of illustration, this invention is not limited to this, The structure of each part is substituted by the thing of the arbitrary structures which have the same function. be able to. Moreover, other arbitrary structures and processes may be added.

For example, in the above-described embodiment, the workpiece side moves. However, in the present invention, for example, the plasma emission portion side may move, and both the workpiece and the plasma emission portion are different. It may move in the direction.
In the present invention, either one of the first temperature detection means and the second temperature detection means may be omitted.

That is, in the present invention, only the first temperature detecting means is provided, and the adjusting means is configured so that the processing temperature during the heat treatment becomes the target processing temperature based on the detection result of the first temperature detecting means. In addition, the power supplied to the pair of electrodes from the power supply unit may be adjusted.
In addition, only the second temperature detecting means is provided, and the adjusting means is configured so that the processing temperature during the heat treatment becomes the target processing temperature based on the detection result of the second temperature detecting means. The power supplied to the pair of electrodes may be adjusted.

In the present invention, the voltage applied between the pair of electrodes is not limited to a high frequency, and may be a pulse wave or a microwave, for example.
In the above embodiment, it is assumed that the plasma apparatus heat-treats the surface of the work under atmospheric pressure, but in the present invention, the heat-treating is performed on the surface of the work in a reduced pressure or vacuum state. Also good.
In addition, the application of the plasma device of the present invention is not particularly limited as long as it is a heat treatment, and the present invention is not limited to various processes (for example, liquid crystal display devices, organic EL display devices, plasma display devices) that require heat treatment. And the like in the manufacture of various electric devices such as electro-optical devices and optical devices).

It is a partial section perspective view showing an embodiment of a plasma device of the present invention. It is a longitudinal cross-sectional view which shows typically the plasma emission part with which the plasma apparatus shown in FIG. 1 is provided. It is a bottom view of the plasma emission part with which the plasma apparatus shown in FIG. 1 is provided. It is a block diagram which shows the circuit structure of the plasma apparatus shown in FIG. It is a flowchart which shows the control action (action) in the case of the heat processing of the plasma apparatus shown in FIG. It is a flowchart which shows the control action (action) in the case of the heat processing of the plasma apparatus shown in FIG. It is a longitudinal cross-sectional view which shows typically the plasma emission part in 2nd Embodiment of the plasma apparatus of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Plasma apparatus 2 ... Plasma emission part 21 ... Plasma production space 211 ... Plasma emission port 23, 24 ... Plate-shaped member 25, 26 ... Electrode 28 ... High frequency power supply 29 ... Gas supply means 291 ... ... gas cylinder 292 ... regulator 293 ... gas reservoir 294 ... housing 295 ... supply pipe 296 ... valve 297 ... gas outlet 298 ... partition plate 299 ... opening 30 ... side plates 301, 302 ... Groove 3 ... Table 4 ... Moving mechanism 5 ... Cooling means 51, 52 ... Cover 53 ... Refrigerant 6 ... Shielding means 60 ... Side plate 61, 62 ... Shielding plate 7 ... Control unit 81 ... No. 1 temperature sensor 82... Second temperature sensor 91... Storage unit 92 .. operation unit 100 .. work 101 .. surface to be processed S101 to S111. Step

Claims (19)

A plasma apparatus that processes a surface to be processed of the workpiece with plasma emitted from the plasma emission portion while relatively moving the plasma emission portion and the workpiece,
The plasma emission part is
It is made of a dielectric material, and is arranged in parallel to each other along a direction perpendicular to the moving direction of the workpiece with respect to the plasma emitting portion and perpendicular to the normal direction of the surface to be processed. A pair of long plate-like members to be formed;
Energization means having a pair of electrodes electrically connected to the pair of plate-like members, respectively, and a power supply unit for applying a voltage between the pair of electrodes;
Gas supply means for supplying a predetermined gas to the plasma generation space;
While supplying the gas to the plasma generation space, a voltage is applied between the pair of plate-like members via the pair of electrodes, thereby activating the gas in the plasma generation space to obtain a predetermined value. It is configured to generate a temperature plasma and discharge the plasma toward the workpiece to heat the surface to be processed of the workpiece.
At least one of first temperature detection means for detecting the temperature of the plasma and second temperature detection means for detecting the temperature of the workpiece;
Based on the detection result of the first temperature detecting means and / or the second temperature detecting means, the power supply unit applies the pair of electrodes to the processing temperature so that the processing temperature during the heat processing becomes a target processing temperature. A plasma apparatus comprising: adjusting means for adjusting the magnitude of supplied power. The plasma emission part has a plasma emission port for emitting plasma,
2. The plasma apparatus according to claim 1, wherein a length A in the longitudinal direction of the plasma discharge port is set to be equal to or longer than a length B in the width direction of the region to be processed of the workpiece. The target processing temperature has a predetermined allowable temperature range,
The said adjustment means is comprised so that the magnitude | size of the electric power supplied to the said pair of electrode from the said power supply part may be adjusted so that the process temperature at the time of the said heat processing may enter in the said allowable temperature range. 3. The plasma apparatus according to 1 or 2. When the detection value of the first temperature detection means is T ₁ and the detection value of the second temperature detection means is T ₂ , the adjustment means sets the treatment temperature T ₀ during the heat treatment according to the following formula 1. The plasma apparatus according to claim 1, wherein the plasma apparatus is configured to obtain and perform the adjustment.
T ₀ = αT ₁ + βT ₂ (Equation 1)
However, α and β in Equation 1 are positive coefficients other than 0, respectively.   The plasma apparatus according to claim 4, wherein the coefficient α and the coefficient β are determined in consideration of a workpiece condition including at least one of the type, composition, and characteristics of the workpiece.   5. The apparatus according to claim 4, further comprising coefficient automatic determination means for recognizing a workpiece condition including at least one of the type, composition, and characteristics of the workpiece and determining the coefficient α and the coefficient β based on the workpiece condition. The plasma apparatus as described. The adjusting means is configured to obtain the processing temperature during the heat treatment based on the detected value of the first temperature detecting means and the detected value of the second temperature detecting means, and perform the adjustment.
The method according to any one of claims 1 to 3, comprising a plurality of modes having different methods of obtaining a processing temperature during the heat treatment, and being configured to select any one of the plurality of modes. Plasma device.   A mode automatic selection unit that recognizes a workpiece condition including at least one of the type, composition, and characteristics of the workpiece and selects a predetermined mode from the plurality of modes based on the workpiece condition. 8. The plasma device according to 7. The plurality of modes include a first mode and a second mode,
When the detection value of the first temperature detection means is T ₁ and the detection value of the second temperature detection means is T ₂ , the adjustment means is a process at the time of the heat treatment in the first mode. the temperature T ₀ determined by the following formula 1, wherein in the second mode, the plasma apparatus according to the processing temperature T ₀ during the heat treatment to claim 7 or 8 is configured to determine the following formula 2.
T ₀ = αT ₁ + βT ₂ (Equation 1)
However, α and β in Equation 1 are positive coefficients other than 0, respectively.
T ₀ = γT ₁ (Expression 2)
However, γ in Equation 2 is a positive coefficient excluding 0.   The plasma apparatus according to claim 9, wherein the coefficient α and the coefficient β are determined in consideration of a work condition including at least one of the type, composition, and characteristics of the work.   10. The apparatus according to claim 9, further comprising automatic coefficient determination means that recognizes a work condition including at least one of the type, composition, and characteristics of the work and determines the coefficient α and the coefficient β based on the work condition. The plasma apparatus as described.   12. The plasma apparatus according to claim 9, wherein the coefficient γ is determined in consideration of a workpiece condition including at least one of the type, composition, and characteristics of the workpiece.   The plasma apparatus according to claim 11, wherein the coefficient automatic determination unit is configured to recognize the workpiece condition and determine the coefficient γ based on the workpiece condition. The plurality of modes includes a third mode,
Said adjustment means, said in the third mode, the plasma apparatus according to any one of the processing temperature T ₀ during the heat treatment to 9 claims is configured to determine the following formula 3 13.
T ₀ = δT ₂ (Equation 3)
However, δ in Equation 3 is a positive coefficient excluding 0.   The plasma apparatus according to claim 4, wherein the coefficient α and the coefficient β are 0.5, respectively.   The plasma device according to any one of claims 1 to 15, wherein the power supply unit includes a high-frequency power source having a frequency of 5 to 100 MHz.   The plasma apparatus according to claim 1, further comprising a moving unit that relatively moves the plasma emitting unit and the workpiece.   The plasma apparatus according to claim 17, wherein the moving means has a function of adjusting a relative moving speed between the plasma emitting unit and the workpiece. The plasma apparatus according to claim 1, further comprising a shielding unit that shields a region from which plasma is emitted from an external environment between the plasma emitting unit and the workpiece.

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