JP2007279055A - Method of manufacturing acceleration sensor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing acceleration sensor of high reliability and accuracy. <P>SOLUTION: In the method, SOI (silicon-on-insulator) wafer structured by two silicon substrates 10 and 20 bonded with insulating layer 30 is etched, and the first silicon substrate 10 is provided with aperture 11 to form each area of circumference fixing part 12, a spindle fixing part 13, a beam part 14 and a stopper part 15. Meanwhile, a pedestal part 21 and a spindle part 23 slightly thinner than this pedestal part are formed on the second silicon substrate 20. Then the circumference fixing part 12 and the pedestal part 21, and an insulating layer 30, other than those except connecting the region between the spindle fixing part 13 and the spindle part 23, are removed by etching. By forming in dimensions so as to overlap the spindle part 23 with the stopper part 15, acceleration-based displacement of this spindle part 23 is limited, on the basis of the vessel, where the stopper part 15 and the pedestal part 21 are fixed. Thus breakage due to excessive acceleration can be avoided. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an acceleration sensor for detecting acceleration in three axis directions of XYZ, and particularly to a technique for preventing destruction due to excessive acceleration.

Japanese Patent Publication No. 8-7228 Japanese Patent Laid-Open No. 10-48243

2A and 2B are configuration diagrams of a conventional acceleration sensor.
FIG. 2A shows an acceleration sensor described in FIG. 1 of Patent Document 1 having a single crystal substrate 50 made of disc-shaped silicon. On the single crystal substrate 50, an action part 51, a flexible part 52, and a fixing part 53 are arranged concentrically in order from the center. The flexible part 52 is formed so that the thickness of the back surface is thin and has flexibility, and a plurality of resistance elements (not shown) having a piezoresistance effect are formed on the surface. A columnar weight body 54 is fixed to the back surface of the action portion 51, and the fixing portion 53 is fixed to the bottom portion 61 of the container 60 with an adhesive 62 via a cylindrical base 55. The pedestal 55 is set to a height such that the weight body 54 does not contact the bottom surface of the container 60 in a normal state.

  A wiring hole is provided in the upper part of the wall surface 63 of the container 60, and the wiring electrode 70 is drawn out through the wiring hole. One end of the electrode 70 in the container 60 is connected to a resistance element on the single crystal substrate 50 by a bonding wire 71. The upper part of the container 60 is covered with a lid 64.

  In such an acceleration sensor, resistance elements formed linearly on the flexible portion 52 are arranged in the X direction and the Y direction, and a change in electric resistance due to distortion of each resistance element is detected, and the weight body 54 is detected. The magnitude and direction of acceleration applied to the can be calculated.

  Further, when a large acceleration is applied, the weight body 54 comes into contact with the bottom 61 of the container 60 to prevent an excessive displacement and prevent the single crystal substrate 50 from being broken.

  FIG. 2B is a cross-sectional view of the acceleration sensor having a two-layer structure described in FIG. 5 of Patent Document 2 and shows a structure for preventing an excessive displacement of the mass part.

  This acceleration sensor is configured by joining a square first semiconductor substrate 70 and a second semiconductor substrate 80 by a known fixing means such as an adhesive or welding. The semiconductor substrate 70 includes a square central mass portion 71 not shown in the figure, four peripheral mass portions 72 connected to the four corners of the central mass portion 71, a support portion 73 around the substrate, and a central mass portion 71 In order to connect the support portion 73 with flexibility, a beam portion 74 having a reduced thickness is integrally formed. Although not shown, a plurality of resistance elements having a piezoresistance effect are formed on the surface of the beam portion 74. On the other hand, the semiconductor substrate 80 is composed of a weight part 81 located in the center part and a pedestal 82 arranged around the weight part 81 with a certain interval.

  In the structure 1 of FIG. 2B, the outer periphery of the peripheral mass part 72 is formed larger than the outer periphery of the weight part 81, and the peripheral mass part is formed on the upper surface of the pedestal 82 overlapping the peripheral mass part 72. A recess 82 a for forming a gap is formed between the second recess 72 and the second recess 72.

  Thereby, an excessive displacement of the mass part is prevented by the overlap of the peripheral mass part 72 and the pedestal 82. 2B, the outer periphery of the peripheral mass portion 72 is formed smaller than the outer periphery of the weight portion 81, and the support portion 73 is formed on the upper surface of the periphery of the weight portion 81 that overlaps the support portion 73. Is provided with a recess 81a for forming a gap therebetween. Thereby, an excessive displacement of the mass portion is prevented by the overlap of the support portion 73 and the weight portion 81.

However, the conventional method for manufacturing an acceleration sensor has the following problems.
For example, in the acceleration sensor of FIG. 2A, the base 55 is fixed to the bottom 61 of the container 60 with an adhesive 62. For this reason, when the amount of the adhesive 62 increases or the pressing pressure at the time of bonding increases, the adhesive 62 is pushed out below the weight body 54 and finally reaches the weight body 54. There is a problem that the weight body 54 is fixed. Further, there is a problem that the adhesive 62 becomes thick and the distance between the weight body 54 and the bottom 61 of the container 60 increases and exceeds the limit distance that acts as a stopper.

  On the other hand, in manufacturing the acceleration sensor of FIG. 2B, a process of joining the two semiconductor substrates 70 and 80 after processing them separately is necessary. For this reason, there existed a problem that the process in a manufacturing process increased and it was difficult to cost down. Moreover, the dimensional error at the time of joining becomes large, and there is a problem that it is difficult to improve reliability and accuracy.

  In the acceleration sensor manufacturing method of the present invention, the first semiconductor layer, the first layer formed on the first semiconductor layer, and the second semiconductor layer formed on the first layer are stacked. A step of preparing a semiconductor wafer made of a substrate, and providing a plurality of openings in the second semiconductor layer make the weight fixing portion, the peripheral fixing portion, and the weight fixing portion flexible to the peripheral fixing portion. Forming a beam part to be connected and a stopper extending from the peripheral fixing part, and providing a central mass part having a rectangular upper surface by providing a recess in the first semiconductor layer, and the central mass part Forming a weight part composed of a peripheral mass part extending from each of the first and second pedestal parts that surround and separate the weight part, and selectively removing the first layer, Between the central mass part of the weight part and the peripheral fixing part Characterized in that a step of leaving the first layer between the serial pedestal.

  In another acceleration sensor manufacturing method of the present invention, a weight is fixed by preparing a semiconductor wafer including an insulating layer and a semiconductor substrate formed on the insulating layer, and providing a plurality of openings in the semiconductor substrate. Defining a stopper having an opening, extending from the peripheral fixing part, a beam part flexibly connecting the weight fixing part and the peripheral fixing part, and the insulating layer Forming a pedestal portion in a portion corresponding to the peripheral fixing portion, forming a weight portion in a portion corresponding to the weight fixing portion of the insulating layer, the peripheral fixing portion, the pedestal portion, and the weight Removing an insulating layer between the stopper and the weight portion through the plurality of openings, leaving an insulating layer connecting the fixed portion and the weight portion, respectively, and including an opening defined in the stopper; It is characterized by having.

  According to the acceleration sensor manufacturing method of the present invention, the stopper for limiting the displacement of the weight portion is formed. As a result, it is possible to limit not only the displacement toward the container but also the amount of displacement toward the opposite side of the container, and the destruction due to excessive acceleration can be prevented. If a reinforcing material for reinforcing the stopper is formed, the stopper can be prevented from being damaged.

  Furthermore, an acceleration sensor is manufactured by forming strain detection means, a beam portion, a stopper, a weight portion, a pedestal, and the like using a semiconductor wafer. This eliminates the need for attaching a plurality of components, makes it possible to reduce the dimensional error and improve the reliability and accuracy.

  In the method of manufacturing an acceleration sensor, the acceleration sensor includes a laminated substrate having a first semiconductor layer, a first layer formed on the first semiconductor layer, and a second semiconductor layer formed on the first layer. A semiconductor wafer is prepared. Then, by providing a plurality of openings in the second semiconductor layer, a weight fixing portion, a peripheral fixing portion, a beam portion for connecting the weight fixing portion to the peripheral fixing portion so as to have flexibility, and the A stopper extending from the peripheral fixing portion is formed. Next, by providing a concave portion in the first semiconductor layer, a weight portion including a central mass portion having a rectangular upper surface and a peripheral mass portion extending from the central mass portion and the weight portion are separated from each other. The pedestal that surrounds is defined. Thereafter, by selectively removing the first layer, the first layer between the weight fixing part and the central mass part of the weight part and between the peripheral fixing part and the pedestal part. Leave the layer.

(Acceleration sensor structure)
1A to 1D are configuration diagrams of an acceleration sensor showing Embodiment 1 of the present invention, where FIG. 1A is a plan view, FIG. 1C is a back view, and FIG. ) And (d) are cross-sectional views taken along cross-sections AA and BB in FIG.

  3A to 3D are plan views showing patterns of respective layers in the acceleration sensor of FIG. 1, in which FIG. 3A is a first silicon substrate 10 and FIG. 3B is an insulating layer. 30, (c) shows the respective patterns of the reinforcing portion 41, and (d) shows the pattern of the second silicon substrate 20.

  This acceleration sensor includes a first silicon substrate 10 having a thickness of about 5 μm, which is a second semiconductor layer, and a second silicon substrate 20 having a thickness of about 525 μm, which is a first semiconductor layer. The SOI (Silicon on Insulator) wafer bonded through the insulating layer 30 is subjected to a process such as etching.

  The silicon substrate 10 for one acceleration sensor has a substantially square shape with one side of about 2.5 mm, and by providing four openings 11 inside thereof, a peripheral fixing portion 12, a weight fixing portion 13, Each region of the beam portion 14 and the stopper portion 15 is formed.

  The peripheral fixing portion 12 is a region having a width of about 500 μm provided in the peripheral portion of the silicon substrate 10, and the weight fixing portion 13 is a substantially square having a side of about 700 μm provided in the central portion of the silicon substrate 10. It is an area. The peripheral fixing portion 12 and the weight fixing portion 13 are connected by four beam portions 14 having a width of about 400 μm provided so as to be orthogonal to the vertical and horizontal directions. On the surface of the beam portion 14, a resistance element 16 having a piezoresistance effect in which an electrical resistance changes due to mechanical strain is formed.

  Of the substantially square area surrounded by the peripheral fixing part 12 and the beam part 14, a substantially right triangle area having two sides of the peripheral fixing part 12 is a stopper part 15, on the opposite side of the stopper part 15. The region of a substantially right triangle is the opening 11. Further, the stopper portion 15 is provided with a plurality of small openings 17.

  On the other hand, the silicon substrate 20 includes a pedestal portion 21 having a width of about 500 μm provided in the periphery corresponding to the peripheral fixing portion 12 of the silicon substrate 10 and a weight portion provided inside the pedestal portion 21 via a gap 22. 23. The weight part 23 has a shape corresponding to the areas of the weight fixing part 13, the opening part 11 and the stopper part 15 of the silicon substrate 10. That is, the weight portion 23 includes a central weight portion 23a that is a central mass portion corresponding to the weight fixing portion 13, and a peripheral weight portion 23b that is four peripheral mass portions connected to the four corners of the central weight portion 23a. It is configured.

  Further, in the silicon substrate 20, silicon corresponding to the beam portion 14 of the silicon substrate 10 is removed as a groove portion 24. The thickness of the weight portion 23 is formed thinner than the thickness of the pedestal portion 21 by a maximum allowable displacement amount (for example, 5 μm). Further, a step portion 23c having a width and a height of about 20 μm is formed around the lower portion of the weight portion 23, for example.

  The silicon substrates 10 and 20 are mutually connected via the oxide film 31 of the insulating layer 30 left corresponding to the peripheral fixing part 12 and the oxide film 32 of the insulating layer 30 left corresponding to the weight fixing part 13. It is connected. Further, on the surface of the silicon substrate 10, on the boundary line between the peripheral fixing portion 12 and the stopper portion 15 at the four corners, a reinforcing portion 41 made of aluminum or the like is provided via a protective film (not shown) to reinforce the stopper portion 15. Is provided.

(Acceleration sensor manufacturing method)
4 and 5 are process diagrams (No. 1 and No. 2) showing a method of manufacturing the acceleration sensor of FIG. A method for manufacturing the acceleration sensor shown in FIG. 1 will be described below with reference to FIGS.

(1) Process 1
For example, an N-type silicon substrate 10 having a thickness of about 5 to 8 Ω / cm and a silicon substrate 20 having a thickness of about 525 μm and a volume resistivity of about 16 Ω / cm is formed of an insulating layer made of silicon oxide having a thickness of about 5 μm. An SOI wafer bonded through 30 is prepared.

(2) Process 2
A protective film 40 made of silicon oxide having a thickness of about 0.4 μm is formed on the surface of the silicon substrate 10 under thermal oxidation conditions using a humidified atmosphere of about 1000 ° C.

(3) Process 3
An opening 40a is provided in the protective film 40 using a photolithography etching technique, and a P-type diffusion layer 18 that becomes the resistance element 16 and the like is formed on the surface of the silicon substrate 10 by a boron diffusion method. Further, a protective oxide film 40b is formed on the surface of the diffusion layer 18 by a CVD (Chemical Vapor Deposition) method.

(4) Process 4
An electrode outlet 40c is opened in the protective oxide film 40b using a photolithography etching technique, and aluminum is deposited on the protective film 40 using a metal sputtering technique. Further, aluminum is etched using a photolitho etching technique, and the reinforcing portion 41 and the wiring 42 are formed simultaneously.

(5) Process 5
Using a PRD (Plasma Reactive Deposition) method, a protective silicon nitride film 43 is formed on the surface of the protective film 40 and the reinforcing portions 41 and wirings 42 formed thereon. It should be noted that the silicon nitride film 43 is not shown in the description of the next step 6 and subsequent steps.

(6) Process 6
A photoresist is formed on the silicon nitride film 43, and the photolithography etching technique is used to separate the beam portion 14 and the stopper portion 15 between the peripheral weight portion 23b and the stopper portion 15 in a later step. An opening 17 used to remove the intervening insulating layer 30 is formed.

(7) Process 7
An oxide film 44 is formed on the back surface of the SOI wafer, that is, on the surface of the silicon substrate 20 by using the CVD technique. The peripheral oxide film 44 is left so as to correspond to the pedestal portion 21, and the central oxide film 44 is removed using a photolithography etching technique to form an opening 44a. Further, a photoresist 45 corresponding to the weight portion 23 is formed in the opening 44a.

(8) Process 8
The surface of the silicon substrate 20 is etched by about 20 μm by using a gas chopping etching technique (GCET) (so-called Bosch method) using the oxide film 44 and the photoresist 45 left in the peripheral portion as an etching mask. Form. Thereafter, only the photoresist 45 is removed.

(9) Process 9
Using the oxide film 44 as an etching mask, the surface of the silicon substrate 20 is additionally etched by about 5 μm using GCET. As a result, a weight portion 23 having a thickness about 5 μm thinner than the pedestal portion 21 is obtained, and a peripheral portion having a thickness about 20 μm thinner than the center portion is formed. This peripheral portion becomes the step portion 23c in a later process.

(10) Step 10
An etching mask 46 for forming the gap 22 and the groove 24 between the base portion 21 and the weight portion 23 of the silicon substrate 20 is formed by photolithography.

(11) Step 11
The gap 22 and the groove 24 of the silicon substrate 20 are formed using GCET.

(12) Step 12
The SOI wafer that has been processed up to step 11 is immersed in buffered hydrofluoric acid, and the insulating layer 30 between the silicon substrates 10 and 20 is etched. At this time, buffer hydrofluoric acid flows from the openings 11 and 17 provided in the silicon substrate 10 and the gap 22 and the groove 24 of the silicon substrate 20, and the insulating layer 30 interposed between the peripheral weight portion 23 b and the stopper portion 15. Is removed.

  Thereafter, in the same manner as in a normal semiconductor manufacturing method, a chip is cut out from the SOI wafer, accommodated in a container, and predetermined wiring is performed.

(Acceleration sensor operation)
The acceleration sensor manufactured by the above manufacturing method operates as follows.
When a downward acceleration is applied to the weight portion 23 of the acceleration sensor accommodated in the container, the beam portion 14 is bent and the weight portion 23 is displaced downward. The downward displacement of the weight portion 23 is stopped at a position where the bottom surface of the weight portion 23 is in contact with the bottom portion of the container, and further displacement is prevented. Further, when an upward acceleration is applied to the weight portion 23, the beam portion 14 is bent and the weight portion 23 is displaced upward, but is stopped at a position where the peripheral weight portion 23b contacts the stopper portion 15, Displacement is prevented.

  On the other hand, the electrical resistance of the resistance elements 16 formed on the four beam portions 14 changes according to the deflection of the beam portions 14. Thereby, the magnitude and direction of acceleration are calculated based on the amount of change of the four resistance elements 16.

(Effect of Example 1)
According to the first embodiment, there are the following effects.

  (I) Displacement exceeding the upper limit of the weight portion 23 is blocked by the stopper portion 15 reinforced by the reinforcing portion 41, and displacement exceeding the lower limit is blocked by the bottom surface 61 of the container 60. Is done. Thereby, destruction of the sensor due to excessive acceleration can be prevented.

  (Ii) Since the SOI wafer is formed by etching, a step of bonding a plurality of silicon substrates is unnecessary. For this reason, a dimensional error becomes very small and reliability and precision can be improved.

  (Iii) A step portion 23 c is formed around the lower portion of the weight portion 23. Thus, when the adhesive is applied to the back surface of the pedestal portion 21 and is fixed to the container 60, even if the adhesive is pushed out from between the bottom 61 of the container 60 and the pedestal portion 21, There is no possibility of reaching 23 and fixing the weight portion 23.

(Modification)
In addition, this invention is not limited to the said Example, A various deformation | transformation is possible. Examples of this modification include the following.

  (A) The shape is not limited to a square. It may be rectangular or circular. Further, the dimensions of the silicon substrates 10 and 20 are not limited to those illustrated.

  (B) When the electrode outlet is provided in step 4, an opening is provided on the peripheral fixing portion 12 located on the pedestal portion 21, and an aluminum wiring 42 and a silicon alloy layer of the peripheral fixing portion 12 are formed. You may make it do. Thereby, the intensity | strength of the reinforcement part 41 can be improved.

  (C) In steps 4 and 5, the reinforcing portion 41 and the wiring 42 are formed with a single aluminum layer. However, in order to further increase the strength of the reinforcing portion 41, a plurality of aluminum layers are formed using a known multilayer wiring forming technique. May be formed.

  (D) In step 9, the front surface may be covered with a resist, and the silicon exposed portion on the back surface may be etched with potassium hydroxide solution or TMAH (Tetra-methylammonium Hydroxide) solution. Further, the oxide film on the back surface may be formed before the opening is formed, and thereafter, the formation of the opening and the formation of the opening of the oxide film on the back surface may be sequentially performed, and then step 7 may be performed.

It is a block diagram of the acceleration sensor which shows Example 1 of this invention. It is a block diagram of the conventional acceleration sensor. It is a top view which shows the pattern of each layer in the acceleration sensor of FIG. FIG. 3 is a process diagram (part 1) illustrating a method of manufacturing the acceleration sensor of FIG. 1; FIG. 8 is a process diagram (part 2) illustrating the method for manufacturing the acceleration sensor of FIG. 1;

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,20 Silicon substrate 11,17 Opening part 12 Peripheral fixing part 13 Weight fixing part 14 Beam part 15 Stopper part 16 Resistance element 20a Recessed part 21 Base part 22 Gap 23 Weight part 24 Groove part 30 Insulating layer 31, 32 Oxide film 40 Protective film 41 Reinforcement part 42 Wiring

Claims (5)

Preparing a semiconductor wafer comprising a laminated substrate having a first semiconductor layer, a first layer formed on the first semiconductor layer, and a second semiconductor layer formed on the first layer; ,
By providing a plurality of openings in the second semiconductor layer, a weight fixing portion, a peripheral fixing portion, a beam portion for connecting the weight fixing portion to the peripheral fixing portion in a flexible manner, and the peripheral fixing Forming a stopper extending from the portion;
By providing a recess in the first semiconductor layer, a weight part including a central mass part having a rectangular upper surface and a peripheral mass part extending from the central mass part, and a pedestal that surrounds and separates the weight part The process of defining the part,
By selectively removing the first layer, the first layer between the weight fixing part and the central mass part of the weight part and between the peripheral fixing part and the pedestal part is removed. A process of remaining;
A method for manufacturing an acceleration sensor, comprising: The method of manufacturing an acceleration sensor according to claim 1,
A method for manufacturing an acceleration sensor, comprising the step of forming a reinforcing material on an upper portion of the stopper. In the manufacturing method of the acceleration sensor according to claim 2,
The method of manufacturing an acceleration sensor, wherein the step of forming a reinforcing material on the stopper is performed before the step of forming a recess in the first semiconductor layer. Preparing a semiconductor wafer including an insulating layer and a semiconductor substrate formed on the insulating layer;
By providing a plurality of openings in the semiconductor substrate, a weight fixing portion, a peripheral fixing portion, a beam portion that flexibly connects the weight fixing portion and the peripheral fixing portion, and extending from the peripheral fixing portion, Defining a stopper having an opening;
Forming a pedestal portion in a portion corresponding to the peripheral fixing portion of the insulating layer;
Forming a weight portion in a portion corresponding to the weight fixing portion of the insulating layer;
The stopper and the weight are interposed through the plurality of openings including openings formed in the stopper, leaving an insulating layer connecting the peripheral fixing portion and the pedestal portion and the weight fixing portion and the weight portion, respectively. Removing the insulating layer between the parts;
A method for manufacturing an acceleration sensor, comprising:   6. The method of manufacturing an acceleration sensor according to claim 5, wherein the step of removing the insulating layer is performed by wet etching.

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