JP2007245660A - Manufacturing method of metal wiring board and manufacturing method of liquid jet head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a metal wiring board and a manufacturing method of a liquid jet head which accurately form a metal wiring of a prescribed shape in a prescribed position of a substrate. <P>SOLUTION: The metal wiring board manufacturing method forms a metal wiring portion by forming a metal plated layer 93 made up of a metal material at least on a metal wiring base layer 900 by a plating method and then patterning the metal wiring base layer 900 and the metal plated layer 93 into a prescribed shape on the basis of an alignment mark portion 450 as a positioning reference by image recognition after forming the metal layer made up of the metal material on one side of the base substrate and forming the metal plated layer 93 made up of the metal material and the alignment mark portion 450 by patterning the metal layer into a prescribed shape and the liquid jet head manufacturing method applies the metal wiring board manufacturing method. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a method for manufacturing a metal wiring board and a method for manufacturing a liquid jet head, and more specifically, for example, to a method for manufacturing an ink jet recording head that ejects ink droplets as a liquid.

  As an ink jet recording head which is a liquid ejecting head, for example, a pressure generating chamber communicating with a nozzle opening and a flow path forming substrate in which a communicating portion communicating with the pressure generating chamber is formed, and one surface of the flow path forming substrate A piezoelectric element comprising a lower electrode, a piezoelectric layer, and an upper electrode formed on a side of the diaphragm, and a surface of the reservoir that is joined to the surface of the flow path forming substrate on the piezoelectric element side and communicates with the communicating portion. And a reservoir forming substrate having a reservoir portion constituting the portion (for example, see Patent Document 1).

  Further, in the method of manufacturing the ink jet recording head described in Patent Document 1, after forming the lead electrode drawn out from the piezoelectric element, the reservoir forming substrate is joined to one surface of the flow path forming substrate, and in this state, The pressure generating chamber and the communication portion are formed by anisotropic etching on the other surface side of the flow path forming substrate, and then the reservoir is formed by penetrating the isolation layer separating the reservoir portion and the communication portion. .

  Here, when forming the lead electrode on one surface of the flow path forming substrate, the isolation layer separating the communication portion and the reservoir portion is the same layer as the lead electrode, specifically, one surface of the flow path forming substrate. An adhesion layer is formed on the metal layer, and a metal layer is formed on the adhesion layer, and the metal layer and the adhesion layer are patterned into a predetermined shape, whereby a lead electrode drawn from each piezoelectric element, a communication portion, a reservoir portion, And an isolating layer for isolating them simultaneously.

  In the manufacture of a conventional ink jet recording head, for example, in the step of forming a piezoelectric element on one surface side of the flow path forming substrate, the same layer as the piezoelectric layer and the upper electrode on one surface of the flow path forming substrate. Is formed in advance, and then the adhesion layer and the metal layer are laminated in this order on one surface of the flow path forming substrate including the protrusions from above, and the protrusions are formed from the surface side of the metal layer. By recognizing the image of the contour (outer shape) and using this as a positioning reference, the metal layer and the adhesion layer are patterned into a predetermined shape, so that the lead electrode and the isolation layer are simultaneously formed at a predetermined position on the flow path forming substrate. .

  Here, when the metal layer is made of Au, since the surface of the metal layer is in a relatively rough state, the contour of the convex portion located on the base side from the surface side of the metal layer is imaged. As a result, it is difficult to recognize, and as a result, positioning accuracy is deteriorated, and it is difficult to form a lead electrode or an isolation layer at a predetermined position on the flow path forming substrate.

  Such a problem is not only caused when an ink jet recording head that ejects ink droplets is manufactured, but also when a liquid ejecting head that ejects liquid other than ink is manufactured, or when alignment is performed in advance on one surface of a substrate. A mark portion is formed, a metal layer made of a metal material is formed on one surface of the substrate including the alignment mark portion, and the alignment mark portion is image-recognized through this metal layer, and this is used as a positioning reference. The same exists when a metal layer having a predetermined pattern shape is formed at a predetermined position.

JP 2006-44083 A (FIG. 5)

  In view of the above-described circumstances, it is an object of the present invention to provide a method for manufacturing a metal wiring board and a method for manufacturing a liquid jet head capable of forming a metal wiring having a predetermined shape at a predetermined position on the substrate with high accuracy.

According to a first aspect of the present invention for solving the above-mentioned problems, a metal wiring base layer and an alignment mark are formed by forming a metal layer made of a metal material on one surface of a base substrate and patterning the metal layer into a predetermined shape. After forming the portion, a metal plating layer made of a metal material is formed on at least the metal wiring base layer by a plating method, and then the metal wiring base layer and the metal are used with the alignment mark portion as a positioning reference by image recognition. A metal wiring board manufacturing method is characterized in that a metal wiring portion is formed by patterning a plating layer into a predetermined shape.
In the first aspect, the metal layer is patterned to form the metal wiring base layer and the alignment mark portion in advance, so that even if the metal plating layer is subsequently formed, the alignment mark portion can be reliably recognized. Therefore, a metal wiring portion having a predetermined shape can be formed with high accuracy at a predetermined position on the base substrate.

According to a second aspect of the present invention, the metal layer formed by a sputtering method is patterned into a predetermined shape on the one surface of the base substrate through which the first through hole is formed through the thickness direction by wet etching. When forming a metal isolation layer in a portion facing the region where the first through hole is formed and forming the metal plating layer on the metal isolation layer, on the one surface side of the base substrate, A portion of the base substrate corresponding to a region where the first through hole is formed is penetrated in a thickness direction to bond a bonding substrate made of a material that is formed with a second through hole and wet-etched, and The first through hole is formed by wet etching the substrate from the other surface side until the metal isolation layer is exposed, and then the first through hole and the bonding base of the base substrate are formed. In the manufacturing method of the first aspect of the metal wiring board, characterized by penetrating the metal isolation layer formed separates the second through hole.
In the second aspect, when the metal layer is patterned, a metal isolation layer is formed together with the metal wiring base layer and the alignment mark portion, and a metal plating layer is formed on the metal isolation layer, thereby forming the metal layer by a sputtering method. The hole of the metal layer can be covered with a metal plating layer. Thereby, at the time of wet etching from the other surface side of the base substrate, it is possible to reliably prevent the etchant from entering the second through-hole side through the metal isolation layer and wet-etching the bonded substrate. Yield can be improved. In addition, the internal stress of the metal layer formed by the sputtering method and the internal stress of the metal plating layer formed by the plating method cancel each other. Can be prevented, and the etching solution can be more reliably prevented from entering the second through-hole side.

According to a third aspect of the present invention, after forming a convex portion on the one surface of the base substrate, the metal layer is formed on the one surface of the base substrate including the convex portion, and then the convex portion is formed. The alignment mark portion is formed by the convex portion from which the metal layer is removed by removing the metal layer corresponding to the portion, and the method for manufacturing the metal wiring board according to the first or second aspect It is in.
In the third aspect, by removing the metal layer and exposing the alignment mark portion, it is possible to reliably recognize the image of the alignment mark portion, and to increase the height of the metal wiring portion having a predetermined shape at a predetermined position on the base substrate. It can be formed with high accuracy.

According to a fourth aspect of the present invention, there is provided the metal wiring board manufacturing method according to the first or second aspect, wherein the alignment mark portion is formed of the same layer as the metal wiring base layer.
In the fourth aspect, when the metal wiring base layer is formed by patterning the metal layer, the alignment mark portion is formed of the same layer as the metal wiring base layer, thereby simplifying the manufacturing process and reducing the manufacturing time. Shortening can be achieved.

According to a fifth aspect of the present invention, at least the metal wiring base layer comprises a surface portion made of the same material as the adhesion layer and the metal plating layer made of an adhesive metal material as a lowermost layer, and the metal wiring base layer and the metal wiring base layer The metal wiring board according to any one of the first to fourth aspects, wherein the metal wiring portion comprising the metal wiring base layer and the metal plating layer is formed by patterning a metal plating layer into a predetermined shape. In the manufacturing method.
In the fifth aspect, the metal wiring portion having excellent adhesion can be formed at a predetermined position on the base substrate with high accuracy.

According to a sixth aspect of the present invention, there is provided the metal wiring board manufacturing method according to any one of the first to fifth aspects, wherein at least a surface portion of the metal wiring base layer and the metal plating layer are formed of Au. It is in.
In the sixth aspect, the surface of the metal plating layer made of Au is in a relatively rough state, but at least the surface portion of the metal wiring base layer is made of Au, and the metal wiring base layer and the alignment mark portion are previously set. By forming it, even if a metal plating layer made of Au is subsequently formed, the image of the alignment mark portion can be reliably recognized, and a metal wiring portion having a predetermined shape can be accurately formed at a predetermined position on the base substrate. Can be formed.

According to a seventh aspect of the present invention, there is provided a flow path formation in which a pressure generating chamber communicating with a nozzle opening for ejecting liquid is formed and pressure generating means for generating a pressure change in the pressure generating chamber is formed on one side. A metal layer made of a metal material is formed on the one surface of the substrate, and the metal layer is patterned into a predetermined shape to form a metal wiring base layer and an alignment mark portion. Thereafter, at least on the metal wiring base layer In addition, a metal plating layer made of a metal material is formed by plating, and the metal wiring base layer and the metal plating layer are patterned into a predetermined shape by using the alignment mark portion as a positioning reference by image recognition to form a metal wiring portion. A method of manufacturing a liquid jet head is provided.
In the seventh aspect, the metal layer is patterned to form the metal wiring base layer and the alignment mark portion in advance, so that even if the metal plating layer is formed after that, the alignment mark portion can be reliably recognized. Therefore, a metal wiring portion having a predetermined shape can be formed with high accuracy at a predetermined position of the flow path forming substrate.

In an eighth aspect of the present invention, the metal layer formed by a sputtering method is formed in a predetermined shape on the one surface of the flow path forming substrate that is formed of a silicon substrate and has a communication portion that communicates with the pressure generating chamber. After patterning, a metal isolation layer is formed in a portion facing the region where the communication portion is formed and the metal plating layer is formed on the metal isolation layer, and then on the one surface side of the flow path forming substrate. A reservoir portion that forms a part of the reservoir is formed through the thickness direction in a portion facing the region where the communication portion of the flow path forming substrate is formed, and a reservoir forming substrate made of a silicon substrate is bonded And forming the communication portion by wet etching the flow path forming substrate from the other surface side until the metal isolation layer is exposed, and then forming the communication portion and the reservoir portion. By penetrating the metal isolation layer separating, in the seventh method of manufacturing a liquid jet head embodiment of which is characterized by forming said reservoir consisting of the reservoir portion and the communicating portion.
In the eighth aspect, when the metal layer is patterned, the metal isolation layer is formed together with the metal wiring base layer and the alignment mark portion, and the metal plating layer is formed on the metal isolation layer, so that the metal layer is formed by the sputtering method. The hole of the metal layer can be covered with a metal plating layer. As a result, during wet etching from the other surface side of the flow path forming substrate, it is possible to reliably prevent the etchant from entering the reservoir portion side through the metal isolation layer and wet etching the reservoir forming substrate. Yield can be improved. In addition, the internal stress of the metal layer formed by the sputtering method and the internal stress of the metal plating layer formed by the plating method cancel each other. Can be prevented, and the etching solution can be more reliably prevented from entering the reservoir portion.

According to a ninth aspect of the present invention, a piezoelectric element comprising a lower electrode, a piezoelectric layer and an upper electrode is formed on the one surface side of the flow path forming substrate as the pressure generating means, and the piezoelectric element is used as the metal wiring layer. In the manufacturing method of the liquid jet head according to the seventh or eighth aspect, the lead electrode drawn out from is formed.
In the ninth aspect, the lead electrode and the metal isolation layer can be formed with high accuracy at a predetermined position of the flow path forming substrate.

According to a tenth aspect of the present invention, when the piezoelectric element is formed on the one surface of the flow path forming substrate, a convex portion made of the same layer as the piezoelectric layer and the upper electrode is formed, and the convex After forming the metal layer on the one surface of the flow path forming substrate including a portion, removing the metal layer in a portion corresponding to the convex portion, the convex portion from which the metal layer has been removed In the method of manufacturing a liquid jet head according to any one of the seventh to ninth aspects, an alignment mark portion is formed.
In the tenth aspect, by removing the metal layer and exposing the alignment mark portion, it is possible to reliably recognize the image of the alignment mark portion, and the metal wiring portion is placed at a predetermined position on the flow path forming substrate with high accuracy. Can be formed.

(Embodiment 1)
FIG. 1 is an exploded perspective view showing an ink jet recording head manufactured by the manufacturing method according to Embodiment 1 of the present invention, and FIG. 2 is a plan view of FIG. As shown in the drawing, the flow path forming substrate 10 serving as a base substrate is a silicon substrate, specifically, a silicon single crystal substrate having a plane orientation (110) in this embodiment, and one surface thereof is previously heated. An elastic film 50 made of silicon dioxide and having a thickness of 0.5 to 2 μm is formed by oxidation.

  A plurality of pressure generating chambers 12 are juxtaposed on the flow path forming substrate 10 in the width direction (the direction in which the pressure generating chambers 12 are juxtaposed). Further, a communication portion 13 is formed in a region outside the longitudinal direction of the pressure generation chamber 12 of the flow path forming substrate 10 (a direction orthogonal to the direction in which the pressure generation chambers 12 are juxtaposed), and the communication portion 13 and each pressure generation chamber 12 are formed. Are communicated via an ink supply path 14 provided for each pressure generating chamber 12. The communication portion 13 constitutes a part of a reservoir 100 that communicates with a reservoir portion 31 of a reservoir forming substrate 30 described later and serves as a common ink chamber for the pressure generation chambers 12. The ink supply path 14 is formed with a narrower width than the pressure generation chamber 12, and maintains a constant flow path resistance of ink flowing into the pressure generation chamber 12 from the communication portion 13.

Further, on the opening surface side of the flow path forming substrate 10, a nozzle plate 20 having a nozzle opening 21 communicating with the vicinity of the end portion of each pressure generating chamber 12 on the side opposite to the ink supply path 14 is used to generate pressure. The chamber 12 is fixed by an adhesive, a heat welding film, or the like through a mask film 54 used as a mask when forming the chamber 12. The nozzle plate 20 has a thickness of, for example, 0.01 to 1 mm, a linear expansion coefficient of 300 ° C. or less, for example, 2.5 to 4.5 [× 10 ⁻⁶ / ° C.], glass ceramics, silicon It consists of a single crystal substrate or stainless steel.

  On the other hand, as described above, the elastic film 50 having a thickness of, for example, about 1.0 μm is formed on the side opposite to the opening surface of the flow path forming substrate 10. For example, an insulator film 51 of about 0.4 μm is formed. Further, on the insulator film 51, a lower electrode film 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1.0 μm, and a thickness of, for example, about 0 The upper electrode film 80 having a thickness of 0.05 μm is laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In any case, a piezoelectric active part is formed for each pressure generating chamber 12. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator. In the above-described example, the elastic film 50, the insulator film 55, and the lower electrode film 60 function as a diaphragm. However, the elastic film 50 and the insulator film 55 are not provided, and only the lower electrode film 60 is left. The electrode film 60 may be a diaphragm.

The material of the piezoelectric layer 70 constituting the piezoelectric element 300 is, for example, a ferroelectric piezoelectric material such as lead zirconate titanate (PZT), or niobium, nickel, magnesium, bismuth, yttrium, or the like. A relaxor ferroelectric or the like to which a metal is added is used. The composition may be appropriately selected in consideration of the characteristics, application, etc. of the piezoelectric element 300. For example, PbTiO ₃ (PT), PbZrO ₃ (PZ), Pb (Zr _x Ti _1-x ) O ₃ (PZT) ), Pb (Mg _1/3 Nb _2/3 ) O ₃ -PbTiO ₃ (PMN-PT), Pb (Zn _1/3 Nb _2/3 ) O ₃ -PbTiO ₃ (PZN-PT), Pb (Ni ₁ ) _{/ 3 Nb 2/3) O 3 -PbTiO} 3 (PNN-PT), Pb (In 1/2 Nb 1/2) O 3 -PbTiO 3 (PIN-PT), Pb (Sc 1/3 Ta 2/3 ) O ₃ —PbTiO ₃ (PST-PT), Pb (Sc _1/3 Nb _2/3 ) O ₃ —PbTiO ₃ (PSN-PT), BiScO ₃ —PbTiO ₃ (BS-PT), BiYbO ₃ —PbTiO ₃ (BY PT), and the like.

  Further, as shown in FIG. 2, the upper electrode film 80 of the piezoelectric element 300 is a lead electrode that is a metal wiring portion formed by an adhesion layer 91 that is a plurality of metal layers, a metal sputter layer 92, and a metal plating layer 93. 90 are connected to each other, and a voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90.

  Here, the lead electrode 90 of the present embodiment has a two-layer structure comprising an adhesion layer 91 formed by sputtering on the flow path forming substrate 10 side and a metal sputter layer 92 formed by sputtering on the adhesion layer 91. And a metal plating layer 93 formed by plating on the metal layer.

  Examples of the material for forming the adhesion layer 91 include titanium (Ti), titanium tungsten compound (TiW), nickel (Ni), chromium (Cr), nickel chromium compound (NiCr), and the like. Then, the adhesion layer 91 made of nickel chromium (NiCr) was formed. Examples of the material for forming the metal sputter layer 92 and the metal plating layer 93 include gold (Au), platinum (Pt), aluminum (Al), and copper (Cu). In this embodiment, gold (Au A metal sputter layer 92 and a metal plating layer 93 made of Au) were formed.

  In the present embodiment, as will be described in detail later, the same layer as that of the lead electrode 90 is also formed on the diaphragm in the region corresponding to the opening peripheral edge of the communication portion 13, that is, on the elastic film 50 and the insulator film 51. There is a layer 191 that is discontinuous with the lead electrode 90 but does not serve as a wiring, and a metal plating layer 93 formed thereon.

  On the surface of the flow path forming substrate 10 on the piezoelectric element 300 side, a reservoir forming substrate 30 having a reservoir portion 31 constituting at least a part of the reservoir 100 and serving as a bonding substrate is adhered by an adhesive 35. Yes. The reservoir portion 31 of the reservoir forming substrate 30 is communicated with the communication portion 13 through a diaphragm, in this embodiment, through portions 52 provided in the elastic film 50 and the insulator film 51, respectively. A reservoir 100 is formed by the communication portion 13.

  In addition, a piezoelectric element holding portion 32 is provided in a region facing the piezoelectric element 300 of the reservoir forming substrate 30. Since the piezoelectric element 300 is formed in the piezoelectric element holding portion 32, the piezoelectric element 300 is protected in a state hardly affected by the external environment. In addition, the piezoelectric element holding | maintenance part 32 may be sealed and does not need to be sealed. Examples of the material of the reservoir forming substrate 30 include glass, ceramic material, metal, resin, and the like, but it is preferable that the reservoir forming substrate 30 be formed of a material substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10. In this embodiment, the silicon single crystal substrate made of the same material as the flow path forming substrate 10 is used. As a result, the difference in thermal expansion coefficient between the flow path forming substrate 10 and the reservoir forming substrate 30 is substantially eliminated, and warping to the substrate assembly caused by the difference in thermal expansion coefficient is effectively prevented.

  A connection wiring 200 formed in a predetermined pattern is provided on the reservoir forming substrate 30, and a driving IC 210 for driving the piezoelectric element 300 is mounted on the connection wiring 200. Then, the leading end portion of each lead electrode 90 drawn from each piezoelectric element 300 to the outside of the piezoelectric element holding portion 32 and the driving IC 210 are electrically connected via the driving wiring 220.

  Furthermore, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto a region corresponding to the reservoir portion 31 of the reservoir forming substrate 30. The sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm). The sealing film 41 seals one surface of the reservoir unit 31. Yes. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head of this embodiment, ink is taken in from an external ink supply means (not shown), filled with ink from the reservoir 100 to the nozzle opening 21, and then subjected to pressure according to a recording signal from the driving IC 210. By applying a voltage between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the generation chamber 12 to bend and deform the piezoelectric element 300 and the diaphragm, the pressure in each pressure generation chamber 12 is increased. Ink is ejected from the opening 21.

  Hereinafter, a method of manufacturing such an ink jet recording head will be described with reference to FIGS. 3 to 6 and problems in the conventional manufacturing process will be described with reference to FIG. 3 to 6 are cross-sectional views of the pressure generating chamber 12 in the longitudinal direction. FIG. 7 is an enlarged schematic view of the main part showing problems in the conventional manufacturing process.

First, as shown in FIG. 3A, a channel forming substrate wafer 110 which is a silicon wafer is thermally oxidized in a diffusion furnace at about 1100 ° C., and a silicon dioxide film 53 constituting an elastic film 50 is formed on the surface thereof. To do. In this embodiment, a silicon wafer having a relatively thick film thickness of about 625 μm and a high rigidity is used as the flow path forming substrate wafer 110. Next, as shown in FIG. 3B, an insulator film 51 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 53). Specifically, after forming a zirconium (Zr) layer on the elastic film 50 (silicon dioxide film 53) by, for example, sputtering, the zirconium layer is thermally oxidized in a diffusion furnace at 500 to 1200 ° C., for example. Thus, the insulator film 51 made of zirconium oxide (ZrO ₂ ) is formed. Next, as shown in FIG. 3C, for example, a lower electrode film 60 is formed by laminating platinum and iridium on the insulator film 51, and then the lower electrode film 60 is patterned into a predetermined shape.

  Next, as shown in FIG. 3 (d), a piezoelectric layer 70 made of, for example, lead zirconate titanate (PZT) and an upper electrode film 80 made of, for example, iridium are connected to a wafer 110 for flow path forming substrate. The piezoelectric element 300 is formed by patterning the piezoelectric layer 70 and the upper electrode film 80 in regions facing the pressure generation chambers 12. Here, the method for forming the piezoelectric layer 70 is not particularly limited. For example, in this embodiment, a so-called sol in which a metal organic substance is dissolved and dispersed in a catalyst is applied, dried, gelled, and further baked at a high temperature. The piezoelectric layer 70 was formed by using a so-called sol-gel method to obtain a piezoelectric layer 70 made of a metal oxide. Further, in the present embodiment, at the same time when the piezoelectric element 300 is formed, the piezoelectric element 300 includes the piezoelectric layer 70 and the upper electrode film 80 that are discontinuous with the piezoelectric element 300 in the vicinity of the end of the flow path forming substrate wafer 110. The convex part 400 is formed. Although details will be described later, the convex portion 400 is used to form an alignment mark portion. Further, after the piezoelectric element 300 is formed, the insulator film 51 and the elastic film 50 are patterned, and the insulator film 51 and the elastic film 50 are elastically formed in a region where a communication portion (not shown) of the flow path forming substrate wafer 110 is formed. A penetrating portion 52 that penetrates the film 50 and exposes the surface of the flow path forming substrate wafer 110 is formed. Here, the penetrating part 52 is continuously formed across the parallel arrangement direction of the piezoelectric elements 300. In this embodiment, the timing of forming such a penetrating portion 52 is after the piezoelectric element 300 is formed, but of course, the present invention is not limited to this. Before the piezoelectric element 300 is formed, specifically, for example, Before forming the lower electrode film 60 or the like, the insulator film 51 and the elastic film 50 may be formed by patterning. Of course, the through portion 52 may be formed after the lower electrode film 60 is formed and before the piezoelectric layer 70 and the upper electrode film 80 are formed.

  Next, the lead electrode 90 connected to each piezoelectric element 300 is formed on one side of the flow path forming substrate wafer 110. For example, in this embodiment, first, as shown in FIG. 4A, an adhesion layer 91 made of NiCr is formed over the entire surface of the flow path forming substrate wafer 110 by a sputtering method. A metal sputter layer 92 made of Au is formed thereon by sputtering. Thus, by forming the adhesion layer 91 and the metal sputter layer 92 over the entire surface of the flow path forming substrate wafer 110, the penetrating portion 52 is sealed with the adhesion layer 91 and the metal sputter layer 92.

  Next, as shown in FIG. 4B, the alignment mark portion 450, the metal isolation layer 190, and the metal wiring base layer 900 are formed on one side of the flow path forming substrate wafer 110. Specifically, for example, a resist layer 500 having a predetermined shape to be a mask pattern is formed on the metal sputter layer 92 on one side of the flow path forming substrate wafer 110, and the metal sputter layer is formed through the resist layer 500. By patterning 92, the metal wiring base layer 900, which is a portion in which the adhesion layer 91 and the metal sputter layer 92 that are continuous in the juxtaposition direction of the piezoelectric elements 300 are laminated in the vicinity of one end of the piezoelectric element 300. Form. This metal wiring base layer 900 is not patterned for each piezoelectric element 300 at this time. That is, the piezoelectric element 300 is continuously formed over the region where the piezoelectric elements 300 are arranged in parallel.

  Further, in the present embodiment, when the metal wiring base layer 900 is formed in this way, at the same time, a metal sputter layer corresponding to the upper part of the convex part 400 formed on the flow path forming substrate wafer 110 and its peripheral part. By removing 92, the alignment mark part 450 which consists of the convex part 400 covered with the contact | adherence layer 91 is formed. Although details will be described later, the alignment mark portion 450 is used as a positioning reference by image recognition when the metal wiring base layer 900 is patterned for each piezoelectric element 300. Here, since the metal sputter layer 92 is made of Au in this embodiment, the surface is in a relatively rough state, and the metal sputter layer 92 is in a state where the convex portion 400 is covered with the metal sputter layer 92. Although it is difficult to recognize the image of the outline (outer shape) of the convex portion 400 via the surface, the metal sputter layer 92 corresponding to the convex portion 400 is removed, and the convex portion 400 is exposed, whereby the alignment mark portion 450 is formed. Good image recognition can be achieved. That is, the alignment mark portion 450 does not function as an alignment mark in a state where the convex portion 400 is covered with the metal sputter layer 92, and corresponds to the convex portion 400 when the image can be recognized, for example, in this embodiment. This is formed when the portion of the sputtered metal layer 92 is removed, and thereby functions as an alignment mark.

  Furthermore, in the present embodiment, when the metal wiring base layer 900 and the alignment mark portion 450 are formed, at the same time, the opening peripheral portion of the penetrating portion 52 is formed on the adhesion layer 91 and the metal sputter layer 92 covering the penetrating portion 52. By patterning in a predetermined shape so as to be covered and discontinuous with the metal wiring base layer 900, a metal isolation layer 190 which is a portion where the adhesion layer 91 and the metal sputter layer 92 are laminated is formed.

  Next, as shown in FIG. 4C, a metal plating layer 93 is selectively formed on the metal wiring base layer 900 and the metal isolation layer 190. Thus, by forming the metal plating layer 93 on the metal sputtered layer 92 formed by the sputtering method, the coverage of the metal sputtered layer 92 by the metal plated layer 93 can be improved and the generation of holes can be prevented. That is, as will be described in detail later, as shown in FIG. 7A, without forming the metal plating layer 93, the metal isolation layer 190A including only the adhesion layer 91 and the metal sputter layer 92 formed by the sputtering method is formed. Then, when particles exist on the flow path forming substrate wafer 110 before the metal sputter layer 92 is formed, the adhesion layer 91 and the metal sputter layer 92 formed by the sputtering method have poor coverage at the particle portion. Therefore, a hole may be formed in the metal isolation layer 190A itself. However, as in the present invention, since the metal plating layer 93 is formed by the plating method on the metal isolation layer 190 formed by the sputtering method, the metal plating layer 93 has a good coverage at the particle portion, and the metal isolation layer 190. Can be securely covered.

  This prevents the etchant used in the process of forming the pressure generating chamber 12 and the communication portion 13 described in detail later from inadvertently leaking to the reservoir forming substrate wafer 130 side through the metal isolation layer 190. Thus, the yield can be improved. In the present embodiment, the metal isolation layer 190 is formed of the same layer as the lead electrode 90 at the same time, so that the manufacturing process can be simplified.

  Note that the metal sputter layer 92 may be formed of a plurality of layers by repeatedly performing a film forming process by a sputtering method. Thereby, even if pinholes are formed in each layer, the pinholes in each layer do not coincide with each other in the plane direction, and the etching solution used in the process of forming the pressure generation chamber 12 and the like passes through the metal isolation layer 190. This can be effectively prevented. Further, when the metal sputter layer 92 is formed of a plurality of layers, it is preferable that the surface of the metal sputter layer 92 is scrubbed after each layer is formed and before the next layer is formed.

  Here, if only one metal sputter layer 92 is formed and then large particles are removed by washing, a large hole may be formed in the metal sputter layer 92 where the particles are removed. Depending on the size, the large hole formed in the metal sputter layer 92 may not be closed even if the metal plating layer 93 is formed thereon. In such a case, the metal sputter layer 92 is repeatedly performed by a sputtering method to form each layer of the metal sputter layer 92, and then the surface of the metal sputter layer 92 is cleaned by scrubbing before forming the next layer. A large hole formed when particles are removed in each layer can be closed by the next layer, and when the subsequent metal plating layer 93 is formed, the metal sputter layer 92 is reliably covered with the metal plating layer 39. Can do. Thereby, particles generated when the metal sputter layer 92 is formed can be removed, and coverage can be further improved.

  In the present embodiment, a nickel chromium (NiCr) layer having a thickness of 50 nm is formed as the adhesion layer 91, and then a gold (Au) sputter layer having a thickness of 200 nm is formed as the metal sputter layer 92. A gold (Au) plating layer having a thickness of 1.0 μm was formed as the metal plating layer 93. The plating method for forming the metal plating layer 93 is not particularly limited, and examples thereof include an electroless plating method and an electrolytic plating method.

  Next, the lead electrode 90 is formed by patterning the metal wiring base layer 900 and the metal plating layer 93 into a predetermined shape. Specifically, as shown in FIG. 5A, a resist layer 550 serving as a mask pattern is formed on a metal plating layer 93 corresponding to the metal wiring base layer 900, and metal plating is performed via the resist layer 550. The lead electrode 90 is patterned for each piezoelectric element 300 by removing the layer 93 and the metal wiring base layer 900 (adhesion layer 91 and metal sputter layer 92) by wet etching (see FIG. 1). Thus, by forming the lead electrode 90 with a predetermined thickness by laminating the metal wiring base layer 900 and the metal plating layer 93, it is possible to ensure the bonding strength with the drive wiring 220 at the time of wire bonding described later. In addition, the electrical resistance of the lead electrode 90 can be lowered. Thereby, the reliability of the head can be improved.

  Here, when the lead electrode 90 is formed in this way, for example, the metal plating layer 93, the metal sputter layer 92, and the adhesion layer 91 are removed stepwise by etching in this order via the resist layer 550. For example, the adhesion layer 91 is removed in advance using the metal wiring base layer 900 and the metal plating layer 93 as a mask, and then the metal wiring base layer 900 and the metal plating layer 93 are formed via the resist layer 550. Patterning is preferred. When the adhesion layer 91 is patterned by wet etching, a portion having a different etching rate in the adhesion layer 91, specifically, a portion where the metal sputter layer 92 is formed and other portions are not formed. It is possible to effectively prevent a so-called etching residue, in which a part of the adhesion layer 91 remains on the flow path forming substrate wafer 110.

  In addition, finally, before removing the resist layer 550, the metal sputter layer 92 and the metal plating layer 93 are subjected to side wet etching, so that the outer shape of the metal sputter layer 92 and the metal plating layer 93 is more than the outer shape of the adhesion layer 91. Also, it may be formed to be smaller. Thereby, for example, in order to prevent the piezoelectric element 300 from being destroyed due to moisture or the like on the region where the piezoelectric element 300 is formed, an insulating film such as alumina is used as a moisture-resistant protective film. When forming the insulating film, it is possible to improve the adhesion of the insulating film at the peripheral edge portion of the lead electrode 90.

  Next, as shown in FIG. 5B, the reservoir forming substrate wafer 130 is bonded onto the flow path forming substrate wafer 110 with an adhesive 35. Here, the reservoir forming substrate wafer 130 is preliminarily formed with a reservoir portion 31, a piezoelectric element holding portion 32, and the like, and the above-described connection wiring 200 is formed in advance on the reservoir forming substrate wafer 130. Yes. The reservoir forming substrate wafer 130 is, for example, a silicon wafer having a thickness of about 400 μm, and the rigidity of the flow path forming substrate wafer 110 is significantly improved by bonding the reservoir forming substrate wafer 130. Become. In addition, when the flow path forming substrate wafer 110 and the reservoir forming substrate wafer 130 are bonded in this manner, the convex portion 400 used to form the alignment mark portion 450 may be used as a positioning reference.

  Next, as shown in FIG. 5C, after the flow path forming substrate wafer 110 is polished to a certain thickness, it is further wet-etched with hydrofluoric acid so that the flow path forming substrate wafer 110 has a predetermined thickness. To. For example, in this embodiment, the flow path forming substrate wafer 110 is processed to have a thickness of about 70 μm by polishing and wet etching. Next, as shown in FIG. 6A, a mask film 54 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape. Then, as shown in FIG. 6B, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the mask film 54, and the pressure generating chamber 12 is applied to the flow path forming substrate wafer 110. The communication part 13 and the ink supply path 14 are formed. Specifically, by etching the flow path forming substrate wafer 110 with an etchant such as a potassium hydroxide (KOH) aqueous solution until the elastic film 50 and the metal isolation layer 190 are exposed, The communication part 13 and the ink supply path 14 are formed simultaneously.

  At this time, since the penetrating portion 52 is sealed by the metal isolation layer 190 having a metal plating layer provided on the surface, the etching solution may leak to the reservoir forming substrate wafer 130 side through the penetrating portion 52. Absent.

  Here, for example, as shown in FIG. 7A, when the metal isolation layer 190 </ b> A is configured by the metal sputter layer 92 formed by the sputtering method, the metal sputter layer 92 cannot cover the entire surface of the particle 600. Since only the upper surface of the particle 600 can be covered, the hole 601 is opened in the metal sputter layer 92. Then, when anisotropic etching is performed on the flow path forming substrate wafer 110 in such a state, the etchant leaks to the reservoir forming substrate wafer 130 side through the hole 601 of the metal isolation layer 190A. The connection wiring 200 on the reservoir forming substrate wafer 130 and the reservoir forming substrate wafer 130 itself are etched.

  However, as shown in FIG. 7B, after the metal sputter layer 92 is formed on the adhesion layer 91 by the sputtering method, the metal plating layer 93 is formed on the metal sputtering layer 92, so that the adhesion layer 91 and the metal are formed. Even when the particle 600 cannot be covered by the metal isolation layer 190 made of the sputter layer 92, the metal plating layer 93 can cover the particle 600 and the gap around it. Can be reliably covered. Therefore, according to the present invention, it is possible to reliably prevent the etching solution from leaking to the reservoir forming substrate wafer 130 side through the metal isolation layer 190. As a result, the etchant does not adhere to the connection wiring 200 provided on the surface of the reservoir forming substrate wafer 130, and the occurrence of defects such as disconnection can be prevented. Further, there is no possibility that the etchant enters the reservoir portion 31 and the reservoir forming substrate wafer 130 is etched.

  Further, in the metal isolation layer 190, the internal stress of the metal sputter layer 92 formed by the sputtering method becomes a tensile stress, and the internal stress of the metal plating layer 93 formed by the plating method becomes a compressive stress. Cancel each other, and cracks do not occur due to internal stress throughout. For example, as shown in FIG. 7A, when a thick metal sputter layer 92 is formed by sputtering and only this metal sputter layer 92 is used as a metal isolation layer 190A, the thick metal sputter layer 92 formed by sputtering is There is a possibility that the metal isolation layer 190A may be cracked due to internal stress on the pull side. However, as shown in FIG. 7B, since the metal plating layer 93 is laminated on the metal sputtered layer 92 formed by the sputtering method, the internal stresses cancel each other, resulting in the metal isolation layer 190 and It is possible to prevent the metal plating layer 93 from being cracked.

  When forming such a pressure generating chamber 12 or the like, the surface of the reservoir forming substrate wafer 130 opposite to the flow path forming substrate wafer 110 side is made of a material having alkali resistance, such as PPS (polyphenylene sulfide). ), PPTA (polyparaphenylene terephthalamide) or the like may be further sealed. Thereby, defects such as disconnection of wiring provided on the surface of the reservoir forming substrate wafer 130 can be more reliably prevented.

  Next, as shown in FIG. 6C, the metal plating layer 93 and the metal isolation layer 190 in the region facing the through portion 52 are removed by etching, and the communication portion 13 and the reservoir portion 31 are connected via the through portion 52. The reservoir 100 is formed by communication. For example, in the present embodiment, the metal plating layer 93 and the metal isolation layer 190 facing the through portion 52 are removed by wet etching with a predetermined etching solution. At this time, since the metal plating layer 93 and the metal isolation layer 190 facing the bonding region between the reservoir forming substrate wafer 130 and the flow path forming substrate wafer 110 are not completely etched, the peripheral portion of the through portion 52 In this case, the peripheral layer 191 of the metal isolation layer and the metal plating layer 93 laminated thereon are partially left.

  Thus, in this embodiment, since the metal plating layer 93 and the metal isolation layer 190 facing the penetrating portion 52 are removed by wet etching, the metal plating layer 93 and the metal isolation layer 190 are excellent in an extremely short time. Thus, the reservoir 100 can be satisfactorily formed. In the present embodiment, the metal plating layer 93 and the metal isolation layer 190 are removed by wet etching, but the present invention is not limited to this, and may be removed by dry etching.

  After the reservoir 100 is formed in this way, as shown in FIG. 2B, the drive IC 210 is mounted on the connection wiring 200 formed on the reservoir forming substrate wafer 130, and the drive IC 210 and the lead electrode 90 are mounted. Are connected by a drive wiring 220. Thereafter, unnecessary portions of the outer peripheral edge portions of the flow path forming substrate wafer 110 and the reservoir forming substrate wafer 130 are removed by cutting, for example, by dicing. The nozzle plate 20 having the nozzle openings 21 is bonded to the surface of the flow path forming substrate wafer 110 opposite to the reservoir forming substrate wafer 130, and the compliance substrate 40 is attached to the reservoir forming substrate wafer 130. The ink jet recording head having the above-described structure is manufactured by bonding and dividing the flow path forming substrate wafer 110 and the like into a single chip size flow path forming substrate 10 as shown in FIG. In this way, when the connection wiring 200 and the lead electrode 90 are connected by wire bonding, the convex portion 400 used to form the alignment mark portion 450 may be used as a positioning reference.

  As described above, in the manufacturing method of this embodiment, a metal layer composed of the adhesion layer 91 and the metal sputter layer 92 is formed on one surface side of the flow path forming substrate wafer 110, and this metal layer is patterned. By forming the metal wiring base layer 900 and the alignment mark portion 450 in advance, the alignment mark portion 450 can be reliably imaged when the metal wiring base layer 900 is patterned even if the metal plating layer 93 is subsequently formed. Since it can be recognized, the lead electrode 90 having a predetermined shape can be formed with high accuracy at a predetermined position of the flow path forming substrate wafer 110.

  Further, in the manufacturing method of the present embodiment, the portion composed of the metal isolation layer 190 and the metal plating layer 93 separating the communication portion 13 and the reservoir portion 31 has the same configuration as the lead electrode 90, that is, the adhesion layer 91, the metal sputter layer. 92 and the metal plating layer 93, the holes formed in the adhesion layer 91 and the metal sputter layer 92 can be reliably covered with the metal plating layer 93, and the pressure generating chamber 12 and the like are formed. At this time, the leakage of the etching solution to the reservoir forming substrate wafer 130 side can be prevented, and the yield can be improved. Further, since the lead electrode 90 can be formed relatively thick at a time by the plating method, it is not necessary to form the thick metal sputter layer 92 by the sputtering method, and a long-time film formation by the sputtering method becomes unnecessary. The manufacturing time can be shortened and the cost can be reduced. Furthermore, since the internal stress of the metal sputtered layer 92 formed by the sputtering method and the internal stress of the metal plated layer 94 formed by the plating method cancel each other, the internal stress causes cracks in the metal isolation layer 190 and the metal plated layer 93. It can be prevented from occurring.

  Here, it was tested whether or not the etching solution passed through the metal isolation layers of Examples 1 to 4 and Comparative Examples 1 and 2 below.

(Examples 1-4)
As a metal isolation layer of Example 1, after forming a metal sputtering layer having a thickness of 200 nm on the flow path forming substrate wafer by sputtering, a metal plating layer having a thickness of 3000 nm is formed on the metal sputtering layer by plating. Formed.

  As a metal isolation layer of Example 2, after forming a metal sputtering layer having a thickness of 200 nm on the flow path forming substrate wafer by sputtering, a metal plating layer having a thickness of 1000 nm is formed on the metal sputtering layer by plating. Formed.

  As a metal isolation layer of Example 3, after forming a metal sputtering layer having a thickness of 200 nm on the flow path forming substrate wafer by sputtering, a metal plating layer having a thickness of 800 nm is formed on the metal sputtering layer by plating. Formed.

  As the metal isolation layer of Example 4, after forming a first sputter layer with a thickness of 100 nm on a flow path forming substrate wafer by a sputtering method, the first sputter layer is formed with a thickness of 100 nm by a sputtering method. After the second sputter layer was laminated to form a metal sputter layer having a two-layer structure, a metal plating layer was formed on the metal sputter layer to a thickness of 1000 nm by a plating method.

  The metal isolation layers of Examples 1 to 4 were formed by scrubbing the surface each time each layer was formed.

(Comparative Examples 1 and 2)
As the metal isolation layer of Comparative Example 1, after forming a first sputter layer with a thickness of 400 nm on the flow path forming substrate wafer by a sputtering method, a thickness of 400 nm is formed on the first sputter layer by a sputtering method. Then, a second sputter layer was formed, and a third sputter layer having a thickness of 400 nm was laminated on the second sputter layer by a sputtering method to form a metal sputter layer. That is, as the metal isolation layer of Comparative Example 1, a metal sputter layer in which three layers were laminated by a sputtering method was formed.

  As the metal isolation layer of Comparative Example 2, a first sputter layer is formed with a thickness of 200 nm on the flow path forming substrate wafer by a sputtering method, and then a thickness of 1000 nm is formed on the first sputter layer by a sputtering method. A metal sputter layer was formed by laminating the second sputter layer. That is, as the metal isolation layer of Comparative Example 2, a metal sputter layer in which two layers were laminated by a sputtering method was formed.

  The metal isolation layers of Comparative Examples 1 and 2 were formed by scrubbing the surface each time each layer was formed.

(Test example)
The pressure generating chamber 12 and the communication portion 13 are formed by wet etching the flow path forming substrate wafer on which the metal isolation layers of Examples 1 to 4 and Comparative Examples 1 and 2 are formed, and the etching solution is the metal isolation layer. It was measured whether the liquid leaked through. The results are shown in Table 1 below.

  As shown in Table 1, the metal isolation layer of Examples 1 to 4, that is, the metal isolation layer formed by the plating method on the metal sputtering layer after forming the metal sputtering layer by the sputtering method is etched. Liquid leakage was not confirmed. On the other hand, the metal isolation layer of Comparative Examples 1 and 2, that is, the metal isolation layer formed by repeating the sputtering method a plurality of times to form only a plurality of metal sputter layers, caused leakage of the etchant. In Example 3, the metal isolation layer has a thickness of 1000 nm to prevent leakage of the etching solution, whereas the metal isolation layers of Comparative Examples 1 and 2 having a thickness greater than that of Example 3 (both 1200 nm). ) Cannot prevent leakage of the etching solution, it can be said that the metal peeling layer using the metal plating layer can prevent the leakage of the etching solution without increasing the thickness.

(Other embodiments)
As mentioned above, although Embodiment 1 of this invention was demonstrated, this invention is not limited to embodiment mentioned above. For example, in the first embodiment described above, the penetrating portion 52 is formed after the piezoelectric element 300 is formed. However, the penetrating portion 52 may be formed before the piezoelectric element 300 is formed.

  In the first embodiment described above, the metal isolation layer 190 is formed simultaneously with the patterning of the metal wiring base layer 900. However, the present invention is not limited to this. For example, the metal isolation layer 190 and the metal wiring base layer 900 are separately provided. You may make it form.

  Furthermore, in the first embodiment described above, the convex portion 400 is formed in advance on one surface side of the flow path forming substrate wafer 110, and the adhesion layer 91 and the metal sputter layer 92 are formed thereon, and then the metal sputter is formed. The metal wiring base layer 900 and the alignment mark portion 450 are formed by patterning the layer 92, but of course, the present invention is not limited to this. The layer may be patterned to form an alignment mark portion of the same layer as the metal wiring base layer. Even in this case, the same effect as that of the first embodiment can be obtained.

  In the first embodiment described above, the metal isolation layer 190 is formed in a region opposite to the penetrating portion 52 of the flow path forming substrate wafer 110. However, the formation region of the metal isolation layer 190 is particularly limited to this. For example, alignment holes used for positioning each member of the ink jet recording head, and perforations used when dividing the flow path forming substrate wafer 110 and the reservoir forming substrate wafer 130 are formed. If the metal isolation layer 190 of the present invention is applied to the region to be formed, it is possible to prevent the etchant from leaking through the alignment holes and perforations.

  Furthermore, in Embodiment 1 described above, the peripheral portion including the convex portion 400 of the flow path forming substrate wafer 110 is removed by cutting as an unnecessary portion when the flow path forming substrate wafer 110 and the like are divided. Without being limited, for example, without forming a convex portion in the cutting region of the flow path forming substrate wafer, this convex portion, the alignment mark portion at the time of wire bonding connection between the lead electrode and the drive IC performed later, or You may use as an alignment mark part at the time of joining of the wafer for flow path formation substrates, and the wafer for reservoir formation substrates.

  In the first embodiment described above, an ink jet recording head has been described as an example of a liquid ejecting head. However, the present invention is widely intended for all liquid ejecting heads, and ejects liquids other than ink. Of course, the present invention can also be applied to a manufacturing method of a liquid jet head. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (surface emitting displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

  In addition, the present invention is not limited to the above-described method for manufacturing a liquid jet head. For example, a metal layer made of a metal material is formed on one surface of a base substrate, and the metal layer is patterned into a predetermined shape. After the wiring base layer and the alignment mark part are formed at different positions, a metal plating layer made of a metal material is formed on at least the metal wiring base layer by a plating method, and then the alignment mark part is positioned by image recognition. As a method for manufacturing a metal wiring substrate in which a metal wiring portion is formed by patterning a metal wiring base layer and a metal plating layer into a predetermined shape, the present invention can be widely applied in applications in which metal wiring is formed on a substrate.

  Further, in such a method of manufacturing a metal wiring board, a through-hole communicating with the base substrate and the bonding substrate bonded thereon is performed in the same procedure as that for forming the reservoir of the first embodiment. It is applicable also in the manufacturing method of the structure which has this.

  Such a structure can be manufactured as follows by applying the present invention. Specifically, when patterning a metal layer formed by sputtering on a first surface of a base substrate that penetrates in the thickness direction by wet etching to form a first through hole, the base substrate After forming the metal isolation layer corresponding to the portion where the first through hole is formed and forming the metal plating layer on the metal isolation layer, the first through hole of the base substrate is formed on one side of the base substrate. After bonding a bonding substrate made of a material that is wet-etched with an etching solution used when the base substrate is wet-etched while a second through-hole is formed through a portion corresponding to the region to be formed in the thickness direction The first through hole is formed by wet etching the base substrate from the other surface side until the metal isolation layer is exposed, and then bonded to the first through hole of the base substrate. Penetrating the metal isolation layer that separates the second through hole formed in the plate. As a result, when the base substrate is wet-etched, the etchant does not flow out to the second through-hole side via the metal isolation layer and the metal plating layer, thereby reliably preventing the bonded substrate from being wet-etched. can do. In addition, a predetermined-shaped metal wiring can be formed with high accuracy at a predetermined position on the base substrate.

FIG. 3 is an exploded perspective view of the recording head according to the first embodiment. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. It is a principal part enlarged schematic diagram which shows the problem by the conventional manufacturing process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 12 Pressure generation chamber, 20 Nozzle plate, 21 Nozzle opening, 30 Reservoir formation board | substrate, 31 Reservoir part, 32 Piezoelectric element holding part, 35 Adhesive agent, 40 Compliance board | substrate, 50 Elastic film, 51 Insulator film , 52 through-hole, 60 lower electrode film, 70 piezoelectric layer, 80 upper electrode film, 90 lead electrode, 91 adhesion layer, 92 metal sputter layer, 93 metal plating layer, 100 reservoir, 110 wafer for flow path forming substrate, 130 Wafer for reservoir forming substrate, 190 metal isolation layer, 200 connection wiring, 210 driving IC, 220 driving wiring, 300 piezoelectric element, 400 convex portion, 900 metal wiring base layer

Claims (10)

A metal layer made of a metal material is formed on one surface of the base substrate, and the metal layer is patterned into a predetermined shape to form a metal wiring base layer and an alignment mark portion, and at least on the metal wiring base layer. Forming a metal plating layer made of a metal material by a plating method, and then patterning the metal wiring base layer and the metal plating layer into a predetermined shape using the alignment mark portion as a positioning reference by image recognition. A method for manufacturing a metal wiring board, comprising: forming a metal wiring board. When patterning the metal layer formed by sputtering on the one surface of the base substrate through which the first through-hole is formed through the thickness direction by wet etching, the first through-hole is formed. After forming a metal isolation layer on a portion facing the region to be formed and forming the metal plating layer on the metal isolation layer, the first through hole of the base substrate is formed on the one surface side of the base substrate. A second through hole is formed through a portion corresponding to a region where the metal layer is to be formed and a bonding substrate made of a material that is wet-etched is bonded, and the base substrate is separated from the other surface side by the metal isolation. The first through hole is formed by wet etching until the layer is exposed, and then the second through hole formed in the first through hole of the base substrate and the bonding substrate. Method for producing a metal wiring board according to claim 1, wherein the penetrating the metal isolation layer that separates the through holes. After forming a convex portion on the one surface of the base substrate, forming the metal layer on the one surface of the base substrate including the convex portion, and then, a portion of the metal layer corresponding to the convex portion 3. The method of manufacturing a metal wiring board according to claim 1, wherein the alignment mark portion is formed by a protrusion from which the metal layer has been removed by removing the metal layer. 3. The method of manufacturing a metal wiring board according to claim 1, wherein the alignment mark portion is formed of the same layer as the metal wiring base layer. At least the metal wiring base layer is composed of an adhesion layer made of an adhesive metal material as a lowermost layer and a surface portion made of the same material as the metal plating layer, and the metal wiring base layer and the metal plating layer are patterned into a predetermined shape. 5. The method of manufacturing a metal wiring board according to claim 1, wherein the metal wiring portion including the metal wiring base layer and the metal plating layer is formed. 6. The method of manufacturing a metal wiring board according to claim 1, wherein at least a surface portion of the metal wiring base layer and the metal plating layer are formed of Au. A metal is formed on the one surface of the flow path forming substrate in which a pressure generating chamber communicating with a nozzle opening for ejecting liquid is formed and pressure generating means for generating a pressure change in the pressure generating chamber is formed on one surface side. A metal layer made of a material is formed and a metal wiring base layer and an alignment mark portion are formed by patterning the metal layer into a predetermined shape. Thereafter, at least the metal wiring base layer is made of a metal material by plating. A liquid jet head comprising: forming a metal plating layer; and patterning the metal wiring base layer and the metal plating layer in a predetermined shape using the alignment mark portion as a positioning reference by image recognition. Manufacturing method. The communication portion is formed when patterning the metal layer formed by sputtering on the one surface of the flow path forming substrate formed of a silicon substrate and communicating with the pressure generating chamber. After forming a metal isolation layer on a portion facing the region to be formed and forming the metal plating layer on the metal isolation layer, the communication of the flow path formation substrate is formed on the one surface side of the flow path formation substrate. A reservoir portion forming a part of the reservoir is formed in a portion facing the region where the portion is formed to form a part of the reservoir, and a reservoir forming substrate made of a silicon substrate is bonded to the flow path forming substrate. The communication part is formed by wet etching until the metal isolation layer is exposed from the front side, and then the metal isolation separating the communication part and the reservoir part. By penetrating the method of manufacturing a liquid jet head according to claim 7, wherein forming said reservoir consisting of the reservoir portion and the communicating portion. As the pressure generating means, a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode is formed on the one surface side of the flow path forming substrate, and a lead electrode drawn from the piezoelectric element is formed as the metal wiring layer. The method of manufacturing a liquid jet head according to claim 7 or 8. When forming the piezoelectric element on the one surface of the flow path forming substrate, a convex portion made of the same layer as the piezoelectric layer and the upper electrode is formed, and the flow path forming substrate including the convex portion is formed. After the metal layer is formed on the one surface, the alignment mark portion is formed by the convex portion from which the metal layer is removed by removing the metal layer corresponding to the convex portion. A method for manufacturing a liquid jet head according to claim 7.

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