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JP2007241999A5 - - Google Patents

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Publication number
JP2007241999A5
JP2007241999A5 JP2007019143A JP2007019143A JP2007241999A5 JP 2007241999 A5 JP2007241999 A5 JP 2007241999A5 JP 2007019143 A JP2007019143 A JP 2007019143A JP 2007019143 A JP2007019143 A JP 2007019143A JP 2007241999 A5 JP2007241999 A5 JP 2007241999A5
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JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
antenna
conductive
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007019143A
Other languages
Japanese (ja)
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JP2007241999A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2007019143A priority Critical patent/JP2007241999A/en
Priority claimed from JP2007019143A external-priority patent/JP2007241999A/en
Publication of JP2007241999A publication Critical patent/JP2007241999A/en
Publication of JP2007241999A5 publication Critical patent/JP2007241999A5/ja
Withdrawn legal-status Critical Current

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Claims (10)

半導体集積回路と、
前記半導体集積回路に接続するアンテナとして機能する導電層と、
前記半導体集積回路及び前記アンテナとして機能する導電層を覆う一または複数の基板と、
を有する半導体装置であって、
前記基板の少なくとも一つは導電性ポリマーで形成されることを特徴とする半導体装置。 A semiconductor integrated circuit;
A conductive layer functioning as an antenna connected to the semiconductor integrated circuit;
One or more substrates covering the semiconductor integrated circuit and the conductive layer functioning as the antenna ;
A semiconductor device to have a,
At least one of the substrates is formed of a conductive polymer. 請求項１において、前記半導体集積回路及び前記導電層を覆う一または複数の基板は、セルロース繊維及び導電性ポリマー繊維で形成されていることを特徴とする半導体装置。 2. The semiconductor device according to claim 1, wherein the one or more substrates covering the semiconductor integrated circuit and the conductive layer are formed of cellulose fibers and conductive polymer fibers. 半導体集積回路と、
前記半導体集積回路に接続するアンテナとして機能する導電層と、
前記半導体集積回路及び前記アンテナとして機能する導電層を覆う一または複数の基板と、
前記半導体集積回路及び前記一または複数の基板を接着する接着剤と、
を有する半導体装置であって、
前記接着剤は導電性ポリマーを有する組成物で形成されることを特徴とする半導体装置。 A semiconductor integrated circuit;
A conductive layer functioning as an antenna connected to the semiconductor integrated circuit;
One or more substrates covering the semiconductor integrated circuit and the conductive layer functioning as the antenna ;
An adhesive that bonds the semiconductor integrated circuit and the one or more substrates;
A semiconductor device to have a,
The adhesive is formed of a composition having a conductive polymer. 半導体集積回路と、
前記半導体集積回路に接続するアンテナとして機能する導電層と、
前記半導体集積回路を覆う層と、
を有する半導体装置であって、
前記半導体集積回路を覆う層は、導電性ポリマーで形成されることを特徴とする半導体装置。 A semiconductor integrated circuit;
A conductive layer functioning as an antenna connected to the semiconductor integrated circuit;
A layer covering the semiconductor integrated circuit;
A semiconductor device to have a,
The semiconductor device is characterized in that the layer covering the semiconductor integrated circuit is formed of a conductive polymer. 半導体集積回路と、
前記半導体集積回路に接続するアンテナとして機能する導電層と、
前記半導体集積回路及び前記アンテナとして機能する導電層を覆う層と、
を有する半導体装置であって、
前記半導体集積回路及びアンテナとして機能する導電層を覆う層は、導電性ポリマーで形成されることを特徴とする半導体装置。 A semiconductor integrated circuit;
A conductive layer functioning as an antenna connected to the semiconductor integrated circuit;
A layer covering the conductive layer serving as the semiconductor integrated circuit and the antenna,
A semiconductor device to have a,
The semiconductor device is characterized in that a layer covering the semiconductor integrated circuit and the conductive layer functioning as an antenna is formed of a conductive polymer. 半導体集積回路と、前記半導体集積回路に接続する接続端子と、
前記半導体集積回路を覆う層と、
アンテナとして機能する導電層が形成される基板と、
前記基板及び前記半導体集積回路を接着し、前記接続端子及び前記アンテナとして機能する導電層を電気的に接続する導電性粒子を含む異方性導電接着剤と、
を有する半導体装置であって、
前記半導体集積回路を覆う層は導電性ポリマーで形成されることを特徴とする半導体装置。 A semiconductor integrated circuit, and a connection terminal connected to the semiconductor integrated circuit;
And a layer covering the semiconductor integrated circuits,
A substrate on which a conductive layer functioning as an antenna is formed;
An anisotropic conductive adhesive containing the substrate and the bonding the semiconductor integrated circuit, electrically connected to the conductive particles a conductive layer serving as the connection terminal and the antenna,
A semiconductor device to have a,
The semiconductor device is characterized in that the layer covering the semiconductor integrated circuit is formed of a conductive polymer. 半導体集積回路と、前記半導体集積回路に接続する複数の接続端子と、
前記半導体集積回路上に形成された前記複数の接続端子の側面と接する層と、
アンテナとして機能する導電層が形成される基板と、
前記基板及び前記半導体集積回路を接着し、前記複数の接続端子及び前記アンテナとして機能する導電層を電気的に接続する導電性粒子を含む異方性導電接着剤と、
を有する半導体装置であって、
前記複数の接続端子の側面と接する層は導電性ポリマーで形成されていることを特徴とする半導体装置。 A semiconductor integrated circuit, and a plurality of connection terminals connected to the semiconductor integrated circuit;
A layer in contact with a side surface of the plurality of connection terminals formed on the semiconductor integrated circuit;
A substrate on which a conductive layer functioning as an antenna is formed;
An anisotropic conductive adhesive comprising conductive particles for bonding the substrate and the semiconductor integrated circuit and electrically connecting the plurality of connection terminals and the conductive layer functioning as the antenna;
A semiconductor device comprising:
The layer in contact with the side surfaces of the plurality of connection terminals is formed of a conductive polymer . 半導体集積回路と、前記半導体集積回路に接続する接続端子と、
アンテナとして機能する導電層が形成される基板と、
前記アンテナとして機能する導電層の側面と接する層と、
前記基板及び前記半導体集積回路を接着し、前記接続端子及び前記アンテナとして機能する導電層を電気的に接続する導電性粒子を含む異方性導電接着剤と、
を有する半導体装置であって、
前記アンテナとして機能する導電層の側面と接する層は、導電性ポリマーで形成されることを特徴とする半導体装置。 A semiconductor integrated circuit, and a connection terminal connected to the semiconductor integrated circuit;
A substrate on which a conductive layer functioning as an antenna is formed;
A layer in contact with a side surface of the conductive layer functioning as the antenna;
An anisotropic conductive adhesive containing the substrate and the bonding the semiconductor integrated circuit, electrically connected to the conductive particles a conductive layer serving as the connection terminal and the antenna,
A semiconductor device to have a,
The semiconductor device is characterized in that the layer in contact with the side surface of the conductive layer functioning as the antenna is formed of a conductive polymer. 半導体集積回路と、前記半導体集積回路に接続する接続端子と、
アンテナとして機能する導電層が形成される基板と、
前記基板及び前記半導体集積回路を接着し、前記接続端子及び前記アンテナとして機能する導電層を電気的に接続する導電性粒子を含む異方性導電接着剤と、
を有する半導体装置であって、
前記異方性導電接着剤は、導電性ポリマーを有する組成物で形成されることを特徴とする半導体装置。 A semiconductor integrated circuit, and a connection terminal connected to the semiconductor integrated circuit;
A substrate on which a conductive layer functioning as an antenna is formed;
An anisotropic conductive adhesive containing the substrate and the bonding the semiconductor integrated circuit, electrically connected to the conductive particles a conductive layer serving as the connection terminal and the antenna,
A semiconductor device to have a,
The said anisotropic conductive adhesive is formed with the composition which has a conductive polymer, The semiconductor device characterized by the above-mentioned. 請求項１乃至９のいずれか一項において、前記導電性ポリマーの体積抵抗率は１０−３Ω・ｃｍ以上１０１２Ω・ｃｍ以下であることを特徴とする半導体装置。 10. The semiconductor device according to claim 1, wherein the conductive polymer has a volume resistivity of 10 −3 Ω · cm to 10 12 Ω · cm.
JP2007019143A 2006-02-08 2007-01-30 Semiconductor device Withdrawn JP2007241999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007019143A JP2007241999A (en) 2006-02-08 2007-01-30 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006031720 2006-02-08
JP2007019143A JP2007241999A (en) 2006-02-08 2007-01-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JP2007241999A JP2007241999A (en) 2007-09-20
JP2007241999A5 true JP2007241999A5 (en) 2010-03-11

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Family Applications (1)

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JP2007019143A Withdrawn JP2007241999A (en) 2006-02-08 2007-01-30 Semiconductor device

Country Status (1)

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JP (1) JP2007241999A (en)

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WO2009148001A1 (en) 2008-06-06 2009-12-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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KR101022493B1 (en) * 2008-11-28 2011-03-16 고려대학교 산학협력단 Carbon Nano Tube Thin film Transistor and display adopting the same
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