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JP2007116129A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
JP2007116129A
JP2007116129A JP2006254810A JP2006254810A JP2007116129A JP 2007116129 A JP2007116129 A JP 2007116129A JP 2006254810 A JP2006254810 A JP 2006254810A JP 2006254810 A JP2006254810 A JP 2006254810A JP 2007116129 A JP2007116129 A JP 2007116129A
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led chip
light
optical member
mounting substrate
substrate
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JP5237540B2 (en
Inventor
Sakuo Kamata
策雄 鎌田
Yasushi Nishioka
恭志 西岡
Yoji Urano
洋二 浦野
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

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  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To reduce a stress applied to an LED chip due to difference in linear expansion coefficient. <P>SOLUTION: The light emitting device 1 comprises: an LED chip 10; and a mounting substrate 20 on which the LED chip 10 is mounted. The mounting substrate 20 comprises: a metal plate 21 for mounting the LED chip 10; and a wiring board 22 consisting of an insulating substrate 22a laminated on the part of the metal plate 21 not mounting the LED chip 10 and provided, on the surface opposite to the metal plate 21, with a lead pattern 23 connected electrically with the electrode of the LED chip 10. At the part of the metal plate 21 for mounting the LED chip 10, a submount member 30 formed of an insulating material having a linear expansion coefficient substantially identical to that of the material of the LED chip 10 is provided. The LED chip 10 is mounted on the metal plate 21 through the submount member 30. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

近年のLEDチップの高出力化に伴って、LEDチップを照明用途に利用する発光装置の開発が進められている(例えば特許文献1参照)。   With the recent increase in output of LED chips, development of light-emitting devices that use LED chips for lighting purposes is underway (see, for example, Patent Document 1).

上記特許文献に開示された発光装置は、金属などの無機材料により一面開口の箱形に形成された基材と、透明なガラス或いはセラミックからなり基材の開口を塞ぐ気密容器形成材とで構成される気密容器を備え、基材の底壁に複数個のLEDチップを分散して実装してあり、LEDチップの発光は気密容器形成材を通して気密容器の外部に照射されるようになっている。
特開2004−119634号公報
The light emitting device disclosed in the above-mentioned patent document is composed of a base material formed in a box shape with one surface opening by an inorganic material such as metal, and an airtight container forming material that is made of transparent glass or ceramic and closes the base material opening. A plurality of LED chips are distributed and mounted on the bottom wall of the base material, and light emitted from the LED chips is irradiated outside the hermetic container through the hermetic container forming material. .
JP 2004-119634 A

上記構成の発光装置では、金属などの無機材料からなる基材の底壁にLEDチップを直接実装しているので、LEDチップの材料と基材の材料との線膨張率の差に起因して、LEDチップに応力が加わる虞があった。   In the light emitting device having the above configuration, since the LED chip is directly mounted on the bottom wall of the base material made of an inorganic material such as metal, it is caused by the difference in linear expansion coefficient between the LED chip material and the base material. There was a risk of stress being applied to the LED chip.

本発明は上記問題点に鑑みて為されたものであり、その目的とするところは、線膨張率の差に起因してLEDチップに加わる応力を低減した発光装置を提供することにある。   The present invention has been made in view of the above problems, and an object thereof is to provide a light emitting device in which stress applied to an LED chip due to a difference in linear expansion coefficient is reduced.

上記目的を達成するために、請求項1の発明は、LEDチップと、LEDチップが搭載された実装基板と、透光性材料により形成されてLEDチップおよび当該LEDチップの電極に電気的に接続されたボンディングワイヤを封止する封止部と、封止部を透過したLEDチップからの放射光の配光を制御する光学部材と、透光性材料を少なくとも含む材料により形成されて光学部材を覆うようにして実装基板に配置された保護カバーとを備え、LEDチップは、実装基板側の一表面にアノード電極又はカソード電極の内の一方が形成されるとともに、他表面にアノード電極又はカソード電極の内の他方が形成されており、実装基板は、熱伝導性材料からなりLEDチップが搭載される伝熱板と、伝熱板におけるLEDチップの非搭載部位に積層され、LEDチップの電極にボンディングワイヤを介して電気的に接続されるリードパターンが伝熱板と反対側の表面に形成された絶縁性基材とからなり、伝熱板におけるLEDチップの搭載部位にサブマウント部材を配置し、当該サブマウント部材を介してLEDチップを伝熱板に搭載してあり、サブマウント部材の材料を、導体又は半導体の何れかであってLEDチップの材料と線膨張率が略同じ材料とし、サブマウント部材にLEDチップの一方の電極を電気的に接続するとともに、サブマウント部材と上記リードパターンの間を上記ボンディングワイヤを介して電気的に接続したことを特徴とする。   In order to achieve the above object, the invention of claim 1 is an LED chip, a mounting substrate on which the LED chip is mounted, and a light-transmitting material that is electrically connected to the LED chip and the electrode of the LED chip. A sealing portion for sealing the bonded wire, an optical member for controlling the light distribution of the emitted light from the LED chip that has passed through the sealing portion, and a material including at least a light-transmitting material. The LED chip is provided with a protective cover disposed on the mounting substrate so as to cover one of the anode electrode and the cathode electrode on one surface of the mounting substrate side, and the anode electrode or the cathode electrode on the other surface. The mounting substrate is made of a heat conductive material and is mounted on the heat transfer plate on which the LED chip is mounted and the LED chip non-mounting portion on the heat transfer plate. A lead pattern electrically connected to the electrode of the LED chip via a bonding wire and an insulating substrate formed on the surface opposite to the heat transfer plate, and the LED chip mounting portion on the heat transfer plate The LED chip is mounted on the heat transfer plate via the submount member, and the material of the submount member is either a conductor or a semiconductor and linearly expands with the LED chip material. The material is substantially the same rate, and one electrode of the LED chip is electrically connected to the submount member, and the submount member and the lead pattern are electrically connected via the bonding wire. To do.

本発明によれば、伝熱板とLEDチップとの間に、LEDチップの材料と線膨張率が略同じ材料で形成されたサブマウント部材を配置しているので、熱膨張率の差に起因してLEDチップに加わる応力を低減できるという効果がある。さらに、LEDチップにおける実装基板側の表面に一方の電極が形成され、サブマウント部材が導体又は半導体の何れかで形成されているので、LEDチップの一方の電極をサブマウント部材に接続するとともに、サブマウント部材とリードパターンとの間をボンディングワイヤを介して電気的に接続することによって、LEDチップとリードパターンとの間を電気的に接続することができ、サブマウント部材そのものを電路の一部として利用できるから、サブマウント部材の表面に電極パターンを形成する必要が無く、コストダウンを図ることができるという効果もある。   According to the present invention, the submount member formed of a material whose linear expansion coefficient is substantially the same as that of the LED chip material is disposed between the heat transfer plate and the LED chip. As a result, the stress applied to the LED chip can be reduced. Furthermore, since one electrode is formed on the surface of the LED chip on the mounting substrate side and the submount member is formed of either a conductor or a semiconductor, one electrode of the LED chip is connected to the submount member, By electrically connecting the submount member and the lead pattern via a bonding wire, the LED chip and the lead pattern can be electrically connected, and the submount member itself is part of the electric circuit. Therefore, it is not necessary to form an electrode pattern on the surface of the submount member, and the cost can be reduced.

以下、本発明の実施の形態を図面に基づいて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(実施形態1)
以下、本実施形態の発光装置について図1〜図3を参照しながら説明する。
(Embodiment 1)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、LEDチップ10が搭載された実装基板20と、実装基板20におけるLEDチップ10の実装面側でLEDチップ10を囲む枠体40と、枠体40の内側に透明樹脂材料を充填して形成されてLEDチップ10および当該LEDチップ10に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50と、封止部50に重ねて配置されるレンズなり封止部50を透過したLEDチップ10からの放射光の配光を制御する光学部材60と、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって、光学部材60の光出射面60b側に光学部材60を覆い光出射面60bおよび枠体40との間に空気層80が形成される形で配設されるドーム状の保護カバー70とを備えている。   The light emitting device 1 of the present embodiment includes an LED chip 10, a mounting substrate 20 on which the LED chip 10 is mounted, a frame body 40 that surrounds the LED chip 10 on the mounting surface side of the LED chip 10 on the mounting substrate 20, and a frame body The LED 40 and the bonding wires 14 and 14 connected to the LED chip 10 are formed by filling a transparent resin material on the inside of the LED 40 and have an elastic sealing part 50; The optical member 60 that controls the light distribution of the emitted light from the LED chip 10 that has passed through the lens-and-sealing portion 50 disposed in an overlapping manner, and the emission color of the LED chip 10 that is excited by the light emitted from the LED chip 10. A molded product obtained by molding a phosphor that emits light of a color different from that of the transparent material together with the transparent material, covering the optical member 60 on the light emitting surface 60b side of the optical member 60, and the light emitting surface 6 And a dome-shaped protective cover 70 disposed in the form of an air layer 80 is formed between the b and the frame body 40.

なお発光装置1は、例えば照明器具の光源として用いるものであり、例えば、シリカやアルミナなどのフィラーからなる充填材を含有し加熱時に低粘度化する樹脂シート(例えば溶融シリカを高充填したエポキシ樹脂シートのような有機グリーンシート)により形成される絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100に実装することで、LEDチップ10から器具本体100までの熱抵抗が小さくなって、放熱性が向上する。従って、LEDチップ10のジャンクション温度の温度上昇を抑制でき、入力電力を大きくできるから、光出力の高出力化を図ることができる。   The light emitting device 1 is used, for example, as a light source of a lighting fixture. For example, a resin sheet containing a filler made of a filler such as silica or alumina and having a low viscosity when heated (for example, an epoxy resin highly filled with fused silica) The LED chip 10 can be mounted on an instrument body 100 by mounting it on an instrument body 100 made of metal (for example, a metal having high thermal conductivity such as Al or Cu) through an insulating layer 90 formed of an organic green sheet such as a sheet. The heat resistance to the main body 100 is reduced, and the heat dissipation is improved. Therefore, since the temperature rise of the junction temperature of the LED chip 10 can be suppressed and the input power can be increased, the light output can be increased.

実装基板20は、LEDチップ10が搭載される金属板21(伝熱板)と、金属板21におけるLEDチップ10の非搭載部位に積層されたガラスエポキシ基板のような絶縁性基材22aからなる配線基板22とで構成される。絶縁性基材22aにおける金属板21と反対側の表面には、LEDチップ10の図示しない両電極(アノード電極およびカソード電極)にそれぞれ電気的に接続される一対のリードパターン23が形成される。また絶縁性基材22aにおいてLEDチップ10に対応する部位に窓孔24が設けられており、窓孔24から露出する金属板21の表面に後述のサブマウント部材30を介してLEDチップ10が搭載されているので、LEDチップ10で発生した熱は絶縁性基材22aを介さずに金属板21に伝熱できるようになっている。ここにおいて、金属板21の材料としてはCuWを採用しているが、熱伝導率の比較的高い金属材料であればよく、CuWに限らず、Alなどを採用してもよい。なお、金属板21と絶縁性基材22aとは、絶縁性を有するシート状の接着フィルムからなる固着材25により固着されている。また、各リードパターン23は、Ni膜とAu膜との積層膜により構成されており、平面視において枠体40よりも内側の部位がインナーリード部(ボンディング電極)23a,23aとなり、保護カバー70に覆われていない部位がアウターリード部(接続用電極)23b,23bとなっている。   The mounting substrate 20 includes a metal plate 21 (heat transfer plate) on which the LED chip 10 is mounted, and an insulating base material 22a such as a glass epoxy substrate stacked on a portion of the metal plate 21 where the LED chip 10 is not mounted. And a wiring board 22. A pair of lead patterns 23 that are electrically connected to both electrodes (anode electrode and cathode electrode) (not shown) of the LED chip 10 are formed on the surface of the insulating substrate 22a opposite to the metal plate 21. Further, a window hole 24 is provided in a portion corresponding to the LED chip 10 in the insulating base material 22a, and the LED chip 10 is mounted on the surface of the metal plate 21 exposed from the window hole 24 via a submount member 30 described later. Therefore, the heat generated in the LED chip 10 can be transferred to the metal plate 21 without passing through the insulating base material 22a. Here, although CuW is adopted as the material of the metal plate 21, any metal material having a relatively high thermal conductivity may be used, and not only CuW but also Al or the like may be adopted. The metal plate 21 and the insulating base material 22a are fixed by a fixing material 25 made of a sheet-like adhesive film having insulating properties. Each lead pattern 23 is formed of a laminated film of a Ni film and an Au film, and the portions inside the frame body 40 in the plan view become inner lead portions (bonding electrodes) 23 a and 23 a, and the protective cover 70. The portions not covered with the outer lead portions (connecting electrodes) 23b, 23b.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板11を用いており、導電性基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板11の裏面に図示しないカソード側の電極であるカソード電極(n電極)が形成され、発光部12の表面(導電性基板11の主表面側の最表面)に図示しないアノード側の電極であるアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10の発光部12が導電性基板11よりも金属板21から離れた側となるように金属板21に搭載されているが、LEDチップ10の発光部12が導電性基板11よりも金属板21に近い側となるように金属板21に搭載するようにしてもよい。光取り出し効率を考えた場合には、発光部12を金属板21から離れた側に配置することが望ましいが、本実施形態では導電性基板11と発光部12とが同程度の屈折率を有しているので、発光部12を金属板21に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate composed of an n-type SiC substrate having a lattice constant and a crystal structure close to GaN as a crystal growth substrate and having conductivity compared to a sapphire substrate. The light-emitting portion 12 is formed of a GaN-based compound semiconductor material on the main surface side of the conductive substrate 11 and formed of a laminated structure portion having a double hetero structure, for example, by an epitaxial growth method (for example, MOVPE method or the like). ), A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate 11, and is shown on the surface of the light emitting unit 12 (the outermost surface on the main surface side of the conductive substrate 11). An anode electrode (p electrode) which is an electrode on the anode side that is not to be formed is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting unit 12 of the LED chip 10 is mounted on the metal plate 21 so as to be on the side farther from the metal plate 21 than the conductive substrate 11. The conductive plate 11 may be mounted on the metal plate 21 so as to be closer to the metal plate 21 than the conductive substrate 11. In consideration of the light extraction efficiency, it is desirable to arrange the light emitting unit 12 on the side away from the metal plate 21, but in this embodiment, the conductive substrate 11 and the light emitting unit 12 have the same refractive index. Therefore, even if the light emitting unit 12 is disposed on the side close to the metal plate 21, the light extraction loss does not become too large.

またLEDチップ10は、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されて、LEDチップ10と金属板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して金属板21に搭載されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を金属板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。サブマウント部材30の材料としては、導体又は半導体の何れかであって、線膨張率がLEDチップ10の線膨張率と略同じで熱伝導率が比較的高い材料を用いている。ここにおいて、線膨張率が略同じとは、LEDチップ10の線膨張率を中心値とした場合に±3×10−6/Kの範囲内である場合を言い、本実施形態ではLEDチップ10の材料であるSiC(線膨張率4.2×10−6/K)の線膨張率に比較的近い線膨張率を有するSi(線膨張率2.6×10−6/K、熱伝導率168W/m・K)を用いている。 The LED chip 10 is formed in a rectangular plate shape larger than the chip size of the LED chip 10, and the stress acting on the LED chip 10 due to the difference in linear expansion coefficient between the LED chip 10 and the metal plate 21 is applied. It is mounted on the metal plate 21 via a submount member 30 that relaxes. The submount member 30 has not only a function of relieving the stress, but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 on the metal plate 21. . The material of the submount member 30 is either a conductor or a semiconductor, and a material having a linear expansion coefficient substantially the same as that of the LED chip 10 and a relatively high thermal conductivity. Here, the linear expansion coefficient being substantially the same means a case where the linear expansion coefficient of the LED chip 10 is within a range of ± 3 × 10 −6 / K when the linear expansion coefficient is the central value. Si (linear expansion coefficient 2.6 × 10 −6 / K, thermal conductivity) having a linear expansion coefficient relatively close to that of SiC (linear expansion coefficient 4.2 × 10 −6 / K), which is a material of 168 W / m · K).

なお、サブマウント部材30の材料をSiのような半導体材料に限定する趣旨のものではなく、線膨張率がLEDチップ10の材料に比較的近く且つ熱伝導率が比較的高い導体材料又は半導体材料を選定すれば良い。また本実施形態では、導電性基板11を下側(サブマウント部材30側)にしてLEDチップ10がサブマウント部材30に実装されているので、サブマウント部材30の材料として、導電性基板11の材料であるSiCの線膨張率と略同じ材料を用いているが、発光部12を下側(サブマウント部材30側)にしてLEDチップ10がサブマウント部材30に実装された場合には、サブマウント部材30の材料として、発光部12の材料と線膨張率が略同じ材料を用いれば良い。   The material of the submount member 30 is not intended to be limited to a semiconductor material such as Si, but a conductor material or a semiconductor material having a linear expansion coefficient relatively close to that of the LED chip 10 and a relatively high thermal conductivity. Should be selected. In this embodiment, since the LED chip 10 is mounted on the submount member 30 with the conductive substrate 11 facing down (submount member 30 side), the material of the submount member 30 is the conductive substrate 11. A material substantially the same as the linear expansion coefficient of SiC, which is the material, is used. However, when the LED chip 10 is mounted on the submount member 30 with the light emitting portion 12 on the lower side (submount member 30 side), As the material of the mount member 30, a material having substantially the same linear expansion coefficient as that of the light emitting unit 12 may be used.

ここにおいて、本実施形態ではLEDチップ10として発光色が青色の青色LEDチップを採用し、導電性基板11としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いてもよく、SiC基板やGaN基板を用いた場合には結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く結晶成長用基板の熱抵抗を小さくできる。またLEDチップ10の発光色も青色に限らず、例えば赤色や緑色などでもよい。すなわちLEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、導電性基板11もSiC基板に限らず、発光部12の材料に応じて、例えば、GaAs基板、GsP基板などから適宜選択すればよい。ここで、LEDチップ10(つまり導電性基板11)の材料としてGaN(線膨張率5.59×10−6/K)やGaAs(線膨張率5.9×10−6/K)を用いる場合には、これらの材料の線膨張率に比較的近い線膨張率を有するCuW(線膨張率6.4×10−6/K、熱伝導率168W/m・K)をサブマウント部材30の材料として用いれば良いし、LEDチップ10の材料としてGaP(線膨張率4.65×10−6/K)を用いる場合には、線膨張率が比較的近いW(線膨張率4.5×10−6/K、熱伝導率178W/m・K)をサブマウント部材30の材料として用いれば良い。 Here, in this embodiment, a blue LED chip whose emission color is blue is adopted as the LED chip 10 and a SiC substrate is adopted as the conductive substrate 11, but a GaN substrate may be used instead of the SiC substrate, When a SiC substrate or a GaN substrate is used, the crystal growth substrate has a higher thermal conductivity and a lower thermal resistance than the crystal growth substrate compared to the case where a sapphire substrate is used as the crystal growth substrate. it can. The light emission color of the LED chip 10 is not limited to blue, and may be red or green, for example. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. Further, the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12. Here, when GaN (linear expansion coefficient 5.59 × 10 −6 / K) or GaAs (linear expansion coefficient 5.9 × 10 −6 / K) is used as the material of the LED chip 10 (that is, the conductive substrate 11). In this case, CuW (linear expansion coefficient 6.4 × 10 −6 / K, thermal conductivity 168 W / m · K) having a linear expansion coefficient relatively close to the linear expansion coefficient of these materials is used as the material of the submount member 30. When GaP (linear expansion coefficient 4.65 × 10 −6 / K) is used as the material of the LED chip 10, the linear expansion coefficient is relatively close to W (linear expansion coefficient 4.5 × 10 −6 / K, thermal conductivity 178 W / m · K) may be used as the material of the submount member 30.

また、サブマウント部材30の表面(金属板21と反対側の面)にはLEDチップ10が実装され、サブマウント部材30の表面においてLEDチップ10の非実装部位には金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14の一端を接続するとともに、ボンディングワイヤ14の他端を一方のリードパターン23に接続することで、LEDチップ10のカソード電極が、サブマウント部材30およびボンディングワイヤ14を介して一方のリードパターン23に電気的に接続される。またLEDチップ10のアノード電極はボンディングワイヤ14を介して他方のリードパターン23と電気的に接続されている。なお、LEDチップ10とサブマウント部材30とは、例えば、SnPb、AuSn、SnAgCuなどの半田や、銀ペーストなどを用いて接合すればよいが、AuSn、SnAgCuなどの鉛フリー半田を用いて接合することが好ましい。なお、サブマウント部材30におけるLEDチップ10側の表面には、LEDチップ10から放射された光を反射する反射膜(例えばNi膜とAg膜との積層膜からなる)を形成しても良い。   Further, the LED chip 10 is mounted on the surface of the submount member 30 (the surface opposite to the metal plate 21), and a metal thin wire (for example, a gold thin wire) is formed on the surface of the submount member 30 where the LED chip 10 is not mounted. And the other end of the bonding wire 14 is connected to one lead pattern 23 so that the cathode electrode of the LED chip 10 is connected to the submount member 30 and the bonding wire. 14 is electrically connected to one of the lead patterns 23. The anode electrode of the LED chip 10 is electrically connected to the other lead pattern 23 through the bonding wire 14. The LED chip 10 and the submount member 30 may be bonded using, for example, solder such as SnPb, AuSn, SnAgCu, or silver paste, but may be bonded using lead-free solder such as AuSn, SnAgCu. It is preferable. A reflective film (for example, a laminated film of a Ni film and an Ag film) that reflects light emitted from the LED chip 10 may be formed on the surface of the submount member 30 on the LED chip 10 side.

上述の封止部50の透明樹脂材料としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、アクリル樹脂などを用いてもよい。   Although the silicone resin is used as the transparent resin material of the sealing portion 50 described above, not only the silicone resin but also an acrylic resin may be used.

これに対して、枠体40は、円筒状の形状であって、例えばシリコーンのような透光性材料により形成されている。要するに、本実施形態では、封止部50の材料である封止樹脂と同等の線膨張率を有する透光性材料により枠体40を形成してある。ここに、本実施形態では、枠体40を実装基板20に固着した後で枠体40の内側に上記封止樹脂を充填(ポッティング)して熱硬化させることで封止部50を形成してある。なお、封止部50の封止樹脂としてシリコーン樹脂に代えてアクリル樹脂を用いている場合には、枠体40の透光性材料としてアクリル樹脂を採用することが望ましい。   On the other hand, the frame 40 has a cylindrical shape and is formed of a light-transmitting material such as silicone. In short, in the present embodiment, the frame body 40 is formed of a translucent material having a linear expansion coefficient equivalent to that of the sealing resin that is the material of the sealing portion 50. Here, in this embodiment, after the frame body 40 is fixed to the mounting substrate 20, the sealing resin 50 is filled (potted) inside the frame body 40 and thermally cured to form the sealing portion 50. is there. In the case where an acrylic resin is used as the sealing resin for the sealing portion 50 instead of the silicone resin, it is desirable to employ an acrylic resin as the translucent material for the frame body 40.

光学部材60は、封止部50側の光入射面60aおよび光出射面60bそれぞれが凸曲面状に形成された両凸レンズにより構成されている。ここにおいて、光学部材60は、シリコーン樹脂の成形品により構成してあり、封止部50と屈折率が同じ値となっているが、光学部材60はシリコーンの成形品に限らず、例えば、アクリル樹脂の成形品により構成してもよい。   The optical member 60 is composed of a biconvex lens in which each of the light incident surface 60a and the light emitting surface 60b on the sealing portion 50 side is formed in a convex curved surface shape. Here, the optical member 60 is formed of a molded product of silicone resin, and the refractive index is the same as that of the sealing portion 50. However, the optical member 60 is not limited to a molded product of silicone. You may comprise by the molded article of resin.

ところで、光学部材60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと上述の空気層80との境界で全反射させない凸曲面状に形成されている。ここで、光学部材60は、当該光学部材60の光軸がLEDチップ10の厚み方向に沿った発光部12の中心線上に位置するように配置されている。なお、LEDチップ10の側面から放射された光は封止部50および空気層80を伝搬して保護カバー70まで到達し、保護カバー70の蛍光体を励起したり、蛍光体には衝突せずに保護カバー70を透過したりする。   By the way, the optical member 60 has a light exit surface 60b formed in a convex curved surface shape that does not totally reflect the light incident from the light incident surface 60a at the boundary between the light exit surface 60b and the air layer 80 described above. Here, the optical member 60 is disposed so that the optical axis of the optical member 60 is positioned on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 50 and the air layer 80 to reach the protective cover 70 and does not excite the phosphor of the protective cover 70 or collide with the phosphor. Or passing through the protective cover 70.

保護カバー70は、シリコーンのような透明材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている(つまり、保護カバー70は透光性材料と蛍光体とで形成される。)。したがって、本実施形態の発光装置は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが保護カバー70の外面70bを通して放射されることとなり、白色光を得ることができる。なお、保護カバー70の材料として用いる透明材料はシリコーンに限らず、例えばアクリル樹脂、エポキシ樹脂、ガラス、有機成分と無機成分とがnmレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよい。また、保護カバー70の材料として用いる透明材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。本実施形態の保護カバー70は発光部分を保護する機能と色変換の機能とを備えているが、保護カバー70に必ずしも色変換の機能を持たせる必要はなく、単なる保護のみの目的に用いても良い。この場合には蛍光体が不要となり、透光性材料のみで保護カバー70が形成される。   The protective cover 70 is composed of a molded product of a mixture of a transparent material such as silicone and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10. (That is, the protective cover 70 is formed of a translucent material and a phosphor). Therefore, in the light emitting device of this embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the protective cover 70, and white light can be obtained. . Note that the transparent material used as the material of the protective cover 70 is not limited to silicone, for example, an acrylic resin, epoxy resin, glass, an organic / inorganic hybrid material in which an organic component and an inorganic component are mixed and bonded at the nm level or molecular level, and the like. It may be adopted. The phosphor mixed with the transparent material used as the material of the protective cover 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor. The protective cover 70 of this embodiment has a function for protecting the light emitting portion and a color conversion function. However, the protective cover 70 does not necessarily have a color conversion function, and is used only for the purpose of protection. Also good. In this case, the phosphor is unnecessary, and the protective cover 70 is formed only from the light-transmitting material.

ここで、保護カバー70は、内面70aが光学部材60の光出射面60bに沿った形状に形成されている。したがって、光学部材60の光出射面60bの位置によらず法線方向における光出射面60bと保護カバー70の内面70aとの間の距離が略一定値となっている。なお、保護カバー70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。保護カバー70は、実装基板20側の端縁(開口部の周縁)を実装基板20に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。また保護カバー70と光学部材60との間に空気層80が形成されており、この空気層80が断熱層として機能するので、保護カバー70の蛍光体で発生した熱がLEDチップ10へ伝熱されるのを抑制することができる。   Here, the inner surface 70 a of the protective cover 70 is formed in a shape along the light emitting surface 60 b of the optical member 60. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the protective cover 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the optical member 60. In addition, the protective cover 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The protective cover 70 may be bonded to the mounting substrate 20 at the edge on the mounting substrate 20 side (periphery of the opening) using, for example, an adhesive (for example, silicone resin, epoxy resin). In addition, an air layer 80 is formed between the protective cover 70 and the optical member 60, and this air layer 80 functions as a heat insulating layer, so that heat generated in the phosphor of the protective cover 70 is transferred to the LED chip 10. Can be suppressed.

以上説明したように本実施形態の発光装置1では、金属板21におけるLEDチップ10の搭載部位に、導体材料又は半導体材料の何れかであって、LEDチップ10の材料と線膨張率が略同じ材料で形成されたサブマウント部材30を設けてある。すなわち金属板21とLEDチップ10との間に、LEDチップ10の材料と線膨張率が略同じ材料で形成されたサブマウント部材30を配置しているので、熱膨張率の差に起因してLEDチップ10に加わる応力を低減できる。またサブマウント部材30の材料としては熱伝導率の良好な材料を用いているので、LEDチップ10の放熱性を向上させることができる。さらに、LEDチップ10における実装基板20側の表面にアノード電極又はカソード電極の内の一方が形成され、サブマウント部材30が導体又は半導体の何れかで形成されているので、LEDチップ10の一方の電極をサブマウント部材30に電気的に接続するとともに、サブマウント部材30とリードパターン23との間をボンディングワイヤ14を介して電気的に接続することによって、LEDチップ10とリードパターン23との間を電気的に接続することができ、サブマウント部材30そのものを電路の一部として利用できるから、サブマウント部材30の表面に電極パターンを形成する必要が無く、コストダウンを図ることができる。またサブマウント部材30の厚みは、絶縁性基材22aよりも厚めに形成されているので、サブマウント部材30に搭載されたLEDチップ10が、絶縁性基材22aの表面よりも上方に位置することになり、LEDチップ10から側方に照射された光が絶縁性基材22aに遮光されてケラレが発生するのを防止でき、光取り出し効率が向上するという利点がある。   As described above, in the light emitting device 1 of the present embodiment, the portion of the metal plate 21 where the LED chip 10 is mounted is either a conductor material or a semiconductor material, and the linear expansion coefficient is substantially the same as the material of the LED chip 10. A submount member 30 made of a material is provided. That is, since the submount member 30 formed of a material whose linear expansion coefficient is substantially the same as the material of the LED chip 10 is disposed between the metal plate 21 and the LED chip 10, the difference is caused by the difference in thermal expansion coefficient. The stress applied to the LED chip 10 can be reduced. Moreover, since the material with favorable heat conductivity is used as a material of the submount member 30, the heat dissipation of the LED chip 10 can be improved. Furthermore, one of the anode electrode and the cathode electrode is formed on the surface of the LED chip 10 on the mounting substrate 20 side, and the submount member 30 is formed of either a conductor or a semiconductor. The electrodes are electrically connected to the submount member 30, and the submount member 30 and the lead pattern 23 are electrically connected via the bonding wires 14, whereby the LED chip 10 and the lead pattern 23 are connected. Since the submount member 30 itself can be used as a part of the electric circuit, it is not necessary to form an electrode pattern on the surface of the submount member 30 and the cost can be reduced. Moreover, since the thickness of the submount member 30 is formed thicker than the insulating base material 22a, the LED chip 10 mounted on the submount member 30 is positioned above the surface of the insulating base material 22a. In other words, there is an advantage that light emitted from the LED chip 10 to the side can be prevented from being blocked by the insulating base material 22a and vignetting can be generated, and the light extraction efficiency can be improved.

なお、本各実施形態では、サブマウント部材30にLEDチップ10を1つだけ実装しているが、それぞれ実装基板20側(サブマウント部材30側)の一表面にアノード電極又はカソード電極の内の一方が形成されるとともに、他表面にアノード電極又はカソード電極の内の他方が形成された複数個のLEDチップをサブマウント部材30に搭載し、さらにサブマウント部材30をボンディングワイヤ14を介してリードパターン23に電気的に接続することにより、一方の電極をサブマウント部材30及びボンディングワイヤ14を介してリードパターン23に電気的に接続するとともに、各LEDチップ10の他表面に形成された電極をボンディングワイヤ14を介して直接リードパターン23に電気的に接続することによって、1つのサブマウント部材30に複数個のLEDチップ10を実装するようにしても良い。またサブマウント部材30に複数個のLEDチップ10を実装する場合、異なる波長の光をそれぞれ照射する複数種類のLEDチップ10を実装すれば、複数種類のLEDチップ10からの照射光を混色することによって、所望の発光色を得ることができる。なお、この場合には保護カバー70に色変換の機能を持たせる必要はなく、保護カバー70を透光性材料のみで形成し、単なる保護のみの目的で保護カバー70を用いても良い。   In each of the embodiments, only one LED chip 10 is mounted on the submount member 30, but each of the anode electrode or the cathode electrode on one surface of the mounting substrate 20 side (submount member 30 side). A plurality of LED chips, one of which is formed and the other of the anode electrode or the cathode electrode formed on the other surface, are mounted on the submount member 30, and the submount member 30 is lead via the bonding wire 14. By electrically connecting to the pattern 23, one electrode is electrically connected to the lead pattern 23 via the submount member 30 and the bonding wire 14, and the electrode formed on the other surface of each LED chip 10 is connected to the pattern 23. By electrically connecting directly to the lead pattern 23 via the bonding wire 14, one The sub-mount member 30 may be mounted a plurality of LED chips 10. Further, when mounting a plurality of LED chips 10 on the submount member 30, if a plurality of types of LED chips 10 that respectively irradiate light of different wavelengths are mounted, the irradiation light from the plurality of types of LED chips 10 can be mixed. Thus, a desired emission color can be obtained. In this case, the protective cover 70 does not need to have a color conversion function, and the protective cover 70 may be formed of only a translucent material, and the protective cover 70 may be used only for the purpose of protection.

(実施形態2)
以下、本実施形態の発光装置1を図4〜図8に基づいて説明する。
(Embodiment 2)
Hereinafter, the light-emitting device 1 of this embodiment is demonstrated based on FIGS.

本実施形態の発光装置1の基本構成は実施形態1と略同じであって、図4及び図5に示すように光学部材60と枠体40とが同一の透光性材料(例えばシリコーンなど)により一体成形されている点などが相違している。なお実施形態1と共通する構成要素には同一の符号を付して、その説明は省略する。   The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the first embodiment, and as shown in FIGS. 4 and 5, the optical member 60 and the frame body 40 are the same translucent material (for example, silicone). Are different in that they are integrally molded. In addition, the same code | symbol is attached | subjected to the component which is common in Embodiment 1, and the description is abbreviate | omitted.

また、本実施形態における絶縁性基材22aは、金属板21側とは反対の表面に、リードパターン23,23とリードパターン23,23が形成されていない部位とを覆う白色系の樹脂からなるレジスト層26(図4および図6参照)が積層されている。したがって、LEDチップ10の側面から放射され、レジスト層26の表面に入射した光がレジスト層26の表面で反射されるので、LEDチップ10から放射された光が絶縁性基材22aにおける金属板21と反対側の表面(図4の上面)を通して吸収されるのを防止することができ、外部への光取り出し効率を向上させて、光出力の向上を図ることができる。   The insulating base material 22a in the present embodiment is made of a white resin that covers the lead patterns 23 and 23 and the portions where the lead patterns 23 and 23 are not formed on the surface opposite to the metal plate 21 side. A resist layer 26 (see FIGS. 4 and 6) is laminated. Therefore, since the light emitted from the side surface of the LED chip 10 and incident on the surface of the resist layer 26 is reflected by the surface of the resist layer 26, the light emitted from the LED chip 10 is reflected on the metal plate 21 in the insulating substrate 22a. Can be prevented from being absorbed through the surface opposite to the upper surface (the upper surface in FIG. 4), and the light extraction efficiency to the outside can be improved to improve the light output.

なお、レジスト層26には、絶縁性基材22aの窓孔24の近傍において各リードパターン23,23のインナーリード部23a,23aを露出させる円形状の開口部26aが形成されるとともに、絶縁性基材22aの周部において各リードパターン23,23のアウターリード部23b,23bをそれぞれ露出させる円形状の開口部26b,26bが形成されている。   The resist layer 26 is formed with a circular opening 26a that exposes the inner lead portions 23a, 23a of the lead patterns 23, 23 in the vicinity of the window hole 24 of the insulating base material 22a, and has an insulating property. Circular openings 26b and 26b that expose the outer lead portions 23b and 23b of the lead patterns 23 and 23, respectively, are formed in the peripheral portion of the base material 22a.

また本実施形態における光学部材60は、封止部50側の光入射面60aが平面状に形成されるとともに、光出射面60bが凸曲面状に形成されており、平凸レンズ状に形成されている。   Further, the optical member 60 in the present embodiment has a light incident surface 60a on the sealing portion 50 side formed in a planar shape, and a light emitting surface 60b formed in a convex curved surface, and is formed in a plano-convex lens shape. Yes.

ここにおいて、光学部材60と枠体40とは上述のように同一の透光性材料(例えばシリコーンなど)により一体成形されており(換言すれば光学部材60と枠体40とが連続一体に形成されており)、封止部50と屈折率および線膨張率が略同じ値に形成されている。なお光学部材60および枠体40の透光性材料は、封止部50の封止材料と同等の線膨張率を有する材料を用いるのが好ましい。また光学部材60と枠体40とは、封止部50の封止材料の屈折率および弾性率を下回らない透光性材料により一体成形すれば良く、例えば封止部50の封止樹脂がアクリル樹脂である場合には、光学部材60と枠体40とをアクリル樹脂により一体成形しても良い。   Here, the optical member 60 and the frame body 40 are integrally formed of the same translucent material (for example, silicone) as described above (in other words, the optical member 60 and the frame body 40 are integrally formed integrally. The refractive index and the linear expansion coefficient are substantially the same as those of the sealing portion 50. In addition, it is preferable to use the material which has a linear expansion coefficient equivalent to the sealing material of the sealing part 50 as the translucent material of the optical member 60 and the frame 40. The optical member 60 and the frame body 40 may be integrally formed of a light-transmitting material that does not fall below the refractive index and elastic modulus of the sealing material of the sealing portion 50. For example, the sealing resin of the sealing portion 50 is acrylic. In the case of resin, the optical member 60 and the frame body 40 may be integrally formed of acrylic resin.

また、本実施形態の発光装置1では、LEDチップ10が、実装基板20の最表面(レジスト層26の表面)を含む平面から、当該平面の法線方向において離間した位置に配置されており、光学部材60と枠体40とで構成されるレンズブロックにおいて光学部材60と枠体40とで囲まれた空間がLEDチップ10を収納する収納凹部を構成している(図4参照)。   Further, in the light emitting device 1 of the present embodiment, the LED chip 10 is disposed at a position separated from the plane including the outermost surface of the mounting substrate 20 (the surface of the resist layer 26) in the normal direction of the plane. In the lens block composed of the optical member 60 and the frame body 40, the space surrounded by the optical member 60 and the frame body 40 constitutes a housing recess for housing the LED chip 10 (see FIG. 4).

ところで、本実施形態の発光装置1の製造方法としては、図7に示すように、LEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、光学部材60と枠体40とで囲まれる空間(つまり上記の収納凹部)に封止部50となる透明な液状の封止樹脂材料(例えばシリコーン樹脂)50cを注入し、枠体40を実装基板20側にして上記収納凹部内にLEDチップ10が収納される形で光学部材60と枠体40とを実装基板20に配置し、封止樹脂材料50cを硬化させることによって封止部50を形成する方法が考えられる。しかしながら、このような製造方法では製造過程において封止部50にボイドが発生する可能性があるため、以下のような製造方法で製造することが好ましい。   By the way, as a manufacturing method of the light emitting device 1 of the present embodiment, as shown in FIG. 7, the LED chip 10 and the bonding wires 14 and 14 are electrically connected and then surrounded by the optical member 60 and the frame body 40. A transparent liquid sealing resin material (for example, silicone resin) 50c to be the sealing portion 50 is injected into the space (that is, the above-described storage recess), and the LED is placed in the storage recess with the frame body 40 side. A method of forming the sealing portion 50 by arranging the optical member 60 and the frame body 40 on the mounting substrate 20 so as to accommodate the chip 10 and curing the sealing resin material 50c is conceivable. However, in such a manufacturing method, voids may be generated in the sealing portion 50 during the manufacturing process. Therefore, it is preferable to manufacture by the following manufacturing method.

すなわち、発光装置1を製造するにあたって、図8に示すように実装基板20にLEDチップ10を搭載してLEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、LEDチップ10およびボンディングワイヤ14,14を封止部50の一部となる透明な液状の第1の封止樹脂材料(例えばシリコーン樹脂)50aにより覆うとともに、光学部材60と枠体40とで囲まれる空間(収納凹部)に、第1の封止樹脂材料50aと同一の透明な液状の材料からなり、封止部50の他の部分となる第2の封止樹脂材料(例えばシリコーン樹脂)50bを注入し、枠体40を実装基板20側にして上記収納凹部内にLEDチップ10が収納される形で光学部材60と枠体40とを実装基板20に配置して、第1および第2の封止樹脂材料50a,50bを接触させ、両封止樹脂材料50a,50bを硬化させることによって封止部50を形成するのである。このような製造方法によれば、製造過程で封止部50にボイドが発生しにくくなり、信頼性が高く且つ光出力が大きな発光装置1を提供することができる。   That is, in manufacturing the light emitting device 1, after the LED chip 10 is mounted on the mounting substrate 20 and the LED chip 10 and the bonding wires 14 and 14 are electrically connected as shown in FIG. A space (housing recess) surrounded by the optical member 60 and the frame body 40 while covering the wires 14 and 14 with a transparent liquid first sealing resin material (for example, silicone resin) 50a which becomes a part of the sealing portion 50 ) Is injected with a second sealing resin material (for example, silicone resin) 50b, which is made of the same transparent liquid material as the first sealing resin material 50a, and is the other part of the sealing portion 50. The optical member 60 and the frame body 40 are arranged on the mounting substrate 20 so that the LED chip 10 is accommodated in the accommodating recess with the body 40 facing the mounting substrate 20, and the first and second sealings Fat material 50a, is brought into contact with 50b, it is to form the sealing portion 50 by curing Ryofutome resin material 50a, a 50b. According to such a manufacturing method, it is difficult to generate a void in the sealing portion 50 during the manufacturing process, and it is possible to provide the light emitting device 1 with high reliability and high light output.

ここで、第2の封止樹脂材料50bを収納凹部内に注入する前に、第1の封止樹脂材料50aを硬化させておけば、第1の封止樹脂材料50aの粘度が低下し上記収納凹部内に閉じ込められたボイド(気泡)が抜けやすくなるという利点がある。なお本実施形態では、実装基板20のレジスト層26に形成した円形状の開口部26aの内径を保護カバー70の開口部(実装基板20と接触する端縁)の外径よりもやや大きな寸法に設定してあり、第1の封止樹脂材料50aをポッティングした際に開口部26aの内周面近傍まで流れ込んだ第1の封止樹脂材料50aを、保護カバー70と実装基板20とを接合する接着剤として利用している。   Here, if the first sealing resin material 50a is cured before the second sealing resin material 50b is injected into the housing recess, the viscosity of the first sealing resin material 50a is reduced and There is an advantage that voids (bubbles) confined in the storage recess are easily removed. In the present embodiment, the inner diameter of the circular opening 26 a formed in the resist layer 26 of the mounting substrate 20 is slightly larger than the outer diameter of the opening of the protective cover 70 (the edge contacting the mounting substrate 20). The protective cover 70 and the mounting substrate 20 are joined to the first sealing resin material 50a that has been set and flows into the vicinity of the inner peripheral surface of the opening 26a when the first sealing resin material 50a is potted. It is used as an adhesive.

以上説明したように本実施形態の発光装置1では、光学部材60と枠体40とが同一の透光性材料により一体成形されているので、光学部材60と枠体40とが別部品で構成されている場合に比べて部品点数を少なくできるとともに、光学部材60とLEDチップ10との位置合わせが容易にできるので、LEDチップ10と光学部材60との光軸のずれに起因した光出力の低下を抑制することができる。   As described above, in the light emitting device 1 of the present embodiment, the optical member 60 and the frame body 40 are integrally formed of the same light-transmitting material, and thus the optical member 60 and the frame body 40 are configured as separate parts. The number of parts can be reduced as compared with the case where the optical member 60 is used, and the optical member 60 and the LED chip 10 can be easily aligned. Therefore, the light output caused by the deviation of the optical axis between the LED chip 10 and the optical member 60 can be reduced. The decrease can be suppressed.

(実施形態3)
以下、本実施形態の発光装置を図9および図10に基づいて説明する。
(Embodiment 3)
Hereinafter, the light emitting device of this embodiment will be described with reference to FIGS. 9 and 10.

本実施形態の発光装置1の基本構成は実施形態2と略同じであって、図9に示すようにレジスト層26に設けた開口部26aの内径を、保護カバー70の開口部(実装基板20と接触する端縁)の内径よりもやや小さい寸法に設定してあり、保護カバー70における実装基板20側の端縁とレジスト層26における開口部26aの周部とを全周に亘って接着剤からなる接合部75により接合している点が相違する。なお実施形態2と共通する構成要素には同一の符号を付して、その説明は省略する。   The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the second embodiment. As shown in FIG. 9, the inner diameter of the opening 26a provided in the resist layer 26 is set to the opening of the protective cover 70 (the mounting substrate 20). The inner edge of the protective cover 70 and the peripheral edge of the opening 26a in the resist layer 26 over the entire circumference. The point which has joined by the junction part 75 which consists of differs. In addition, the same code | symbol is attached | subjected to the component which is common in Embodiment 2, and the description is abbreviate | omitted.

この発光装置1の製造にあたっては、実施形態2と同様、図10に示すように実装基板20にLEDチップ10を搭載してLEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、LEDチップ10およびボンディングワイヤ14,14を封止部50の一部となる透明な液状の第1の封止樹脂材料(例えばシリコーン樹脂)50aにより覆うとともに、光学部材60と枠体40とで囲まれる空間(収納凹部)に、第1の封止樹脂材料50aと同一の透明な液状の材料からなり封止部50の他の部分となる第2の封止樹脂材料(例えばシリコーン樹脂)50bを注入し、枠体40を実装基板20側にして上記収納凹部内にLEDチップ10が収納される形で光学部材60と枠体40とを実装基板20に配置して、第1および第2の封止樹脂材料50a,50bを接触させ、両封止樹脂材料50a,50bを硬化させることによって封止部50を形成するのである。このような製造方法によれば、実施形態2で説明したのと同様に、製造過程で封止部50にボイドが発生しにくくなり、信頼性が高く且つ光出力が大きな発光装置1を提供することができる。   In manufacturing the light emitting device 1, as in the second embodiment, after the LED chip 10 is mounted on the mounting substrate 20 and the LED chip 10 and the bonding wires 14 and 14 are electrically connected as shown in FIG. The LED chip 10 and the bonding wires 14, 14 are covered with a transparent liquid first sealing resin material (for example, silicone resin) 50 a that is a part of the sealing portion 50 and surrounded by the optical member 60 and the frame body 40. The second sealing resin material (for example, silicone resin) 50b made of the same transparent liquid material as that of the first sealing resin material 50a and the other part of the sealing portion 50 is placed in the space (housing recess). The optical member 60 and the frame body 40 are arranged on the mounting substrate 20 in such a manner that the LED chip 10 is stored in the storage recess with the frame body 40 facing the mounting substrate 20, 2 the sealing resin material 50a, is brought into contact with 50b, it is to form the sealing portion 50 by curing Ryofutome resin material 50a, a 50b. According to such a manufacturing method, as described in the second embodiment, a void is hardly generated in the sealing portion 50 during the manufacturing process, and the light emitting device 1 having high reliability and high light output is provided. be able to.

ここにおいて、本実施形態の発光装置1の製造にあたっては、レジスト層26により、保護カバー70の接合部位まで第1の封止樹脂材料50aが流れ込むのを防止しており、保護カバー70の実装基板20側の端縁と実装基板20とを接着剤により接合しているので、保護カバー70と実装基板20との間に介在する接合部75の厚みの制御が容易になるとともに、保護カバー70と実装基板20との接合の信頼性が向上する。なお、接合部75を構成する接着剤としては、保護カバー70と同じ材料を用いるのが望ましい。   Here, in manufacturing the light emitting device 1 of the present embodiment, the resist layer 26 prevents the first sealing resin material 50a from flowing into the joint portion of the protective cover 70. Since the edge on the 20 side and the mounting substrate 20 are bonded by an adhesive, the thickness of the bonding portion 75 interposed between the protective cover 70 and the mounting substrate 20 can be easily controlled, and the protective cover 70 The reliability of bonding with the mounting substrate 20 is improved. In addition, it is desirable to use the same material as that of the protective cover 70 as the adhesive constituting the joining portion 75.

(実施形態4)
以下、本実施形態の発光装置を図11〜図14に基づいて説明するが、実施形態2と同様の構成要素には同一の符号を付して、その説明は省略する。
(Embodiment 4)
Hereinafter, although the light-emitting device of this embodiment is demonstrated based on FIGS. 11-14, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and the description is abbreviate | omitted.

本実施形態の発光装置1は、図11に示すように実施形態2で説明した枠体40を備えておらず、LEDチップ10から放射された光の配光を制御する光学部材60がドーム状(半球状)に形成されて、実装基板20との間にLEDチップ10を収納する形で実装基板20の一表面側に配設されている。また、LEDチップ10およびボンディングワイヤ14,14を封止する封止部50は、光学部材60と実装基板20とで囲まれた空間に透光性を有する封止樹脂材料(例えばシリコーン樹脂)を充実することによって形成されており、保護カバー70が、実装基板20の上記一表面側において光学部材60を覆い、光学部材60の光出射面60bとの間に空気層80が形成されるようにして配設されている。   The light emitting device 1 of the present embodiment does not include the frame body 40 described in the second embodiment as shown in FIG. 11, and the optical member 60 that controls the light distribution of the light emitted from the LED chip 10 is a dome shape. It is formed in a hemispherical shape, and is disposed on one surface side of the mounting substrate 20 so as to house the LED chip 10 between the mounting substrate 20 and the mounting substrate 20. The sealing portion 50 that seals the LED chip 10 and the bonding wires 14 and 14 is made of a sealing resin material (for example, silicone resin) having translucency in a space surrounded by the optical member 60 and the mounting substrate 20. The protective cover 70 covers the optical member 60 on the one surface side of the mounting substrate 20 so that the air layer 80 is formed between the light emitting surface 60b of the optical member 60 and the protective cover 70. Arranged.

また本実施形態では、実装基板20における配線基板22として、ポリイミドフィルムからなる絶縁性基材22aの一表面側に給電用の一対のリードパターン23,23が形成されたフレキシブルプリント配線板を採用している。   In this embodiment, a flexible printed wiring board in which a pair of lead patterns 23 and 23 for feeding is formed on one surface side of an insulating base material 22a made of a polyimide film is used as the wiring board 22 in the mounting board 20. ing.

ここにおいて各リードパターン23,23は、図12に示すように絶縁性基材22aの外周形状の半分よりもやや小さな外周形状に形成されている。またレジスト層26は、配線基板22の窓孔24の近傍において各リードパターン23,23の1箇所が矩形状に露出し、配線基板22の周部において各リードパターン23,23の1箇所が円形状に露出するようにパターニングされており、各リードパターン23において、窓孔24の近傍で露出する矩形状の部位(窓孔24の対向する2辺の略中央部)が、ボンディングワイヤ14の接続されるインナーリード部23aとなり、配線基板22の周部において露出する円形状の部位がアウターリード部23bとなっている。   Here, as shown in FIG. 12, each lead pattern 23, 23 is formed in an outer peripheral shape slightly smaller than half of the outer peripheral shape of the insulating base material 22a. Further, the resist layer 26 is exposed in a rectangular shape at each lead pattern 23, 23 in the vicinity of the window hole 24 of the wiring substrate 22, and at one location of each lead pattern 23, 23 at the periphery of the wiring substrate 22. The lead pattern 23 is patterned so as to be exposed, and in each lead pattern 23, a rectangular portion exposed in the vicinity of the window hole 24 (substantially central portions of two opposite sides of the window hole 24) is connected to the bonding wire 14. The inner lead portion 23 a is formed, and the circular portion exposed in the peripheral portion of the wiring board 22 is the outer lead portion 23 b.

また本実施形態ではLEDチップ10として、実装基板20側(つまりサブマウント部材30側)の一表面に図示しないカソード側の電極であるカソード電極(n電極)が形成され、他表面に図示しないアノード側の電極であるアノード電極(p電極)が形成されたものを用いており、カソード電極は導体又は半導体からなるサブマウント部材30に電気的に接続されている。そして、LEDチップ10のアノード電極と一方のリードパターン23のインナーリード部23aをボンディングワイヤ14を介して電気的に接続するともに、サブマウント部材30と他方のリードパターン23のインナーリード部23aをボンディングワイヤ14を介して電気的に接続してある。ここで、2つのアウターリード部23b,23bのうち、LEDチップ10のアノード電極に電気的に接続されるアウターリード部23b(図13中右側のアウターリード部23b)には「+」の表示が形成され、カソード電極に電気的に接続されるアウターリード部23b(図13中左側のアウターリード部23b)には「−」の表示が形成されているので、発光装置1における両アウターリード部23b,23bの極性を視覚的に判別でき、誤接続を防止することができる。   In this embodiment, as the LED chip 10, a cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on one surface of the mounting substrate 20 side (that is, the submount member 30 side), and an anode (not shown) is formed on the other surface. An anode electrode (p electrode) formed on the side electrode is used, and the cathode electrode is electrically connected to a submount member 30 made of a conductor or a semiconductor. Then, the anode electrode of the LED chip 10 and the inner lead portion 23a of one lead pattern 23 are electrically connected via the bonding wire 14, and the submount member 30 and the inner lead portion 23a of the other lead pattern 23 are bonded. It is electrically connected via a wire 14. Here, out of the two outer lead portions 23b and 23b, the outer lead portion 23b (the outer lead portion 23b on the right side in FIG. 13) that is electrically connected to the anode electrode of the LED chip 10 has a display of “+”. Since the outer lead 23b (the outer lead 23b on the left side in FIG. 13) that is formed and electrically connected to the cathode electrode is formed with a sign “−”, both outer leads 23b in the light emitting device 1 are formed. , 23b can be visually discriminated and erroneous connection can be prevented.

ところで、本実施形態では配線基板22に設けた窓孔24は矩形状であり、図12に示すように矩形状の窓孔24の対向2辺の中央部近傍にインナーリード部23aが設けられているが、窓孔24の対向2辺の端部付近にインナーリード部23aを設けても良く、ボンディングワイヤ14の全長を長くするで、封止部50の膨張、収縮に起因したボンディングワイヤ14の断線が起こりにくくなって、信頼性が向上する。   By the way, in this embodiment, the window hole 24 provided in the wiring board 22 is rectangular, and as shown in FIG. 12, the inner lead part 23a is provided in the vicinity of the center part of two opposite sides of the rectangular window hole 24. However, the inner lead portion 23a may be provided in the vicinity of the ends of the two opposite sides of the window hole 24, and the length of the bonding wire 14 is increased, so that the bonding wire 14 is expanded and contracted due to the expansion and contraction of the sealing portion 50. The disconnection is less likely to occur and the reliability is improved.

なお本実施形態で用いるLEDチップ10は、結晶成長用基板として6H−SiC基板を用いた青色LEDチップであり、実施形態1と同様に、サブマウント部材30の材料としてSiのような半導体材料を用いているが、サブマウント部材30の材料としては、線膨張率がLEDチップ10の材料に比較的近く且つ熱伝導率が比較的高い導体材料又は半導体材料を採用すれば良い。   The LED chip 10 used in the present embodiment is a blue LED chip using a 6H—SiC substrate as a crystal growth substrate. As in the first embodiment, a semiconductor material such as Si is used as the material of the submount member 30. Although being used, the material of the submount member 30 may be a conductive material or a semiconductor material having a linear expansion coefficient relatively close to that of the LED chip 10 and a relatively high thermal conductivity.

また本実施形態における発光装置1では、サブマウント部材30の厚み寸法を、当該サブマウント部材30の表面が配線基板22のレジスト層26の表面よりも金属板21から離れるような寸法に形成してあり、LEDチップ10から側方に放射された光が配線基板22の窓孔24内周面を通して配線基板22に吸収されるのを防止することができる。なお、サブマウント部材30におけるLEDチップ10が接合される側の表面においてLEDチップ10の接合部位の周部に、LEDチップ10から放射された光を反射する反射膜を形成しても良く、LEDチップ10から側方に放射された光がサブマウント部材30に吸収されるのを防止して、外部への光取り出し効率をさらに向上させることができる。   In the light emitting device 1 according to the present embodiment, the thickness of the submount member 30 is formed such that the surface of the submount member 30 is farther from the metal plate 21 than the surface of the resist layer 26 of the wiring board 22. In addition, light emitted from the LED chip 10 to the side can be prevented from being absorbed by the wiring board 22 through the inner peripheral surface of the window hole 24 of the wiring board 22. A reflective film that reflects light emitted from the LED chip 10 may be formed on the periphery of the bonding portion of the LED chip 10 on the surface of the submount member 30 on the side to which the LED chip 10 is bonded. The light emitted from the chip 10 to the side can be prevented from being absorbed by the submount member 30, and the light extraction efficiency to the outside can be further improved.

一方、光学部材60は、実施形態2と同様に、透光性材料(例えばシリコーンなど)により形成されているが、実施形態2では平凸レンズ形状に形成されているのに対して、本実施形態ではドーム状(半球状)に形成されている。ここにおいて、光学部材60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと空気層80との界面で全反射させないような凸曲面に形成されており、LEDチップ10と光軸が一致するように配置されている。したがって、LEDチップ10から放射され、光学部材60の光入射面60aに入射した光が、光出射面60bと空気層80との界面で全反射されることなく保護カバー70まで到達しやすくなり、全光束を高めることができる。なおLEDチップ10の側面から放射された光は、封止部50、光学部材60および空気層80を伝搬して保護カバー70まで到達し、保護カバー70の蛍光体を励起したり、蛍光体に衝突せずに保護カバー70を透過したりする。また光学部材60は、位置によらず法線方向に沿って肉厚が一様となるように形成されている。なお、本実施形態では封止部50の材料としてシリコーン樹脂を採用しており、光学部材60をシリコーンの成型品により構成しているので、光学部材60と封止部50との屈折率差および線膨張率差を小さくすることができるが、封止部50の材料がアクリル樹脂の場合には、光学部材60もアクリル樹脂により形成するのが好ましい。   On the other hand, the optical member 60 is formed of a translucent material (for example, silicone) as in the second embodiment, but in the second embodiment, the optical member 60 is formed in a plano-convex lens shape. In, it is formed in a dome shape (hemisphere). Here, in the optical member 60, the light emitting surface 60b is formed in a convex curved surface so that the light incident from the light incident surface 60a is not totally reflected at the interface between the light emitting surface 60b and the air layer 80, and the LED chip. 10 and the optical axis coincide with each other. Therefore, the light emitted from the LED chip 10 and incident on the light incident surface 60a of the optical member 60 can easily reach the protective cover 70 without being totally reflected at the interface between the light emitting surface 60b and the air layer 80, The total luminous flux can be increased. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 50, the optical member 60, and the air layer 80 to reach the protective cover 70 to excite the phosphor of the protective cover 70 or It passes through the protective cover 70 without colliding. The optical member 60 is formed to have a uniform thickness along the normal direction regardless of the position. In the present embodiment, a silicone resin is used as the material of the sealing portion 50, and the optical member 60 is formed of a silicone molded product. Therefore, the refractive index difference between the optical member 60 and the sealing portion 50 and Although the linear expansion coefficient difference can be reduced, when the material of the sealing portion 50 is an acrylic resin, the optical member 60 is also preferably formed of the acrylic resin.

また保護カバー70は、内面70aが光学部材60の光出射面60bに沿った形状に形成されており、光出射面60bの位置によらず、法線方向において光出射面60bと保護カバー70の内面70aとの距離が略一定値となっている。   Further, the protective cover 70 has an inner surface 70 a formed along the light emitting surface 60 b of the optical member 60, and the light emitting surface 60 b and the protective cover 70 are in the normal direction regardless of the position of the light emitting surface 60 b. The distance from the inner surface 70a is a substantially constant value.

このような発光装置1を製造するに当たっては、例えばLEDチップ10のアノード電極と一方のリードパターン23の間、サブマウント部材30と他方のリードパターン23の間をそれぞれボンディングワイヤ14,14を介して電気的に接続した後、図13に示すようにディスペンサ400のノズル401の先端部を配線基板22の窓孔24に連続して形成されている樹脂注入孔28に合わせてサブマウント部材30と配線基板22との隙間に、封止部50の一部となる透明な液状の封止樹脂(例えばシリコーン樹脂)を注入してから硬化させる。その後、ドーム状の光学部材60の内側に上記封止部50の残部となる透明な液状の封止樹脂(例えばシリコーン樹脂)を注入してから、光学部材60を実装基板20における所定位置に配置して封止樹脂を硬化させることにより、封止部50を形成するのと同時に光学部材60を実装基板20に固着し、その後保護カバー70を実装基板20に固着するのである。このような製造方法によれば、製造過程において封止部50に気泡(ボイド)が発生しにくくなり、ボイドに起因したボンディングワイヤ14への応力集中を抑制して、信頼性を高めることができる。   In manufacturing such a light emitting device 1, for example, between the anode electrode of the LED chip 10 and one lead pattern 23 and between the submount member 30 and the other lead pattern 23 via bonding wires 14 and 14, respectively. After the electrical connection, the submount member 30 and the wiring are arranged so that the tip of the nozzle 401 of the dispenser 400 is aligned with the resin injection hole 28 continuously formed in the window hole 24 of the wiring board 22 as shown in FIG. A transparent liquid sealing resin (for example, silicone resin) that becomes a part of the sealing portion 50 is injected into the gap with the substrate 22 and then cured. Thereafter, a transparent liquid sealing resin (for example, silicone resin) that becomes the remaining portion of the sealing portion 50 is injected into the inside of the dome-shaped optical member 60, and then the optical member 60 is disposed at a predetermined position on the mounting substrate 20. Then, by hardening the sealing resin, the optical member 60 is fixed to the mounting substrate 20 at the same time as the sealing portion 50 is formed, and then the protective cover 70 is fixed to the mounting substrate 20. According to such a manufacturing method, air bubbles (voids) are less likely to be generated in the sealing portion 50 during the manufacturing process, and stress concentration on the bonding wire 14 due to the voids can be suppressed and reliability can be improved. .

なお、上記のような製造方法を採用する場合でも、製造過程において封止部50に気泡(ボイド)が発生する可能性があるので、光学部材60に液状の封止樹脂を多めに注入することが好ましい。   Even when the above manufacturing method is employed, bubbles may be generated in the sealing portion 50 during the manufacturing process, so that a large amount of liquid sealing resin is injected into the optical member 60. Is preferred.

しかしながら、光学部材60に封止樹脂を多めに注入すると、光学部材60を実装基板20の所定位置に配置する際に、光学部材60に注入された液状の封止樹脂の一部が光学部材60と実装基板20とで囲まれる空間から外側に溢れ出て、レジスト層26の表面に広がってしまい、溢れ出た封止樹脂が硬化してできた不要部によって光が吸収されたり、不要部の凹凸によって光が乱反射されたりして、発光装置1全体として光の取り出し効率が低下する可能性がある。   However, if a large amount of sealing resin is injected into the optical member 60, a part of the liquid sealing resin injected into the optical member 60 is part of the optical member 60 when the optical member 60 is disposed at a predetermined position on the mounting substrate 20. From the space surrounded by the mounting substrate 20 to the outside and spread to the surface of the resist layer 26, and light is absorbed by unnecessary portions formed by curing the overflowing sealing resin, There is a possibility that light is diffusely reflected by the unevenness and the light extraction efficiency of the light emitting device 1 as a whole is lowered.

そこで、本実施形態の発光装置1では、図11および図13に示すように実装基板20の上記一表面において光学部材60の開口部の端縁に重なるリング状の部位と、保護カバー70の開口部の端縁に重なるリング状の部位との間に、光学部材60と実装基板20とで囲まれる空間から溢れ出た封止樹脂を溜める複数の樹脂溜め用穴27を光学部材60の外周方向に離間して形成してある。したがって、光学部材60に注入された液状の封止樹脂の一部が光学部材60と実装基板20とで囲まれる空間から外側に溢れ出たとしても、溢れ出た封止樹脂を樹脂溜め用穴27に溜めることによって、実装基板20の一表面において光学部材60と保護カバー70との間の部位に溢れ出た封止樹脂が硬化して不要部が形成されることはなく、不要部による光の吸収や不要部の凹凸による光の乱反射に起因して光取り出し効率が低下するのを抑制でき、光出力の高出力化を図ることができる。   Therefore, in the light emitting device 1 of the present embodiment, as shown in FIGS. 11 and 13, a ring-shaped portion overlapping the edge of the opening of the optical member 60 on the one surface of the mounting substrate 20 and the opening of the protective cover 70. A plurality of resin reservoir holes 27 for storing sealing resin overflowing from the space surrounded by the optical member 60 and the mounting substrate 20 are provided between the ring-shaped portion overlapping the edge of the portion and the outer peripheral direction of the optical member 60. Are spaced apart from each other. Therefore, even if a part of the liquid sealing resin injected into the optical member 60 overflows outside from the space surrounded by the optical member 60 and the mounting substrate 20, the overflowing sealing resin is removed from the resin reservoir hole. 27, the sealing resin overflowing to a portion between the optical member 60 and the protective cover 70 on one surface of the mounting substrate 20 is not cured and an unnecessary portion is not formed. As a result, it is possible to suppress the light extraction efficiency from being reduced due to the absorption of light and the irregular reflection of light due to the unevenness of the unnecessary portion, and the light output can be increased.

ここで、各樹脂溜め用穴27は、配線基板22に形成した貫通孔27aと、金属板21において貫通孔27aに対応する部位に形成された凹部27bとで構成されており(図11参照)、配線基板22(つまり絶縁性基材22a)の厚みを薄くしたとしても、金属板21の厚みを十分大きくとることで樹脂溜め用穴27の深さ寸法を大きくでき、その結果樹脂溜め用穴27に溜めることが可能な封止樹脂の量を多くすることができる。しかも、樹脂溜め用穴27内で硬化した封止樹脂が、LEDチップ10から保護カバー70への熱伝達を阻止する断熱部として機能することとなり、LEDチップ10の発熱に伴う保護カバー70の温度上昇を抑制でき、LEDチップ10の発熱に起因した蛍光体の発光効率の低下を抑制することができる。   Here, each resin reservoir hole 27 includes a through hole 27a formed in the wiring board 22 and a recess 27b formed in a portion corresponding to the through hole 27a in the metal plate 21 (see FIG. 11). Even if the thickness of the wiring board 22 (that is, the insulating base material 22a) is reduced, the depth dimension of the resin reservoir hole 27 can be increased by sufficiently increasing the thickness of the metal plate 21, and as a result, the resin reservoir hole. 27 can increase the amount of the sealing resin that can be stored in 27. In addition, the sealing resin cured in the resin reservoir hole 27 functions as a heat insulating portion that prevents heat transfer from the LED chip 10 to the protective cover 70, and the temperature of the protective cover 70 accompanying the heat generation of the LED chip 10. The rise can be suppressed, and a decrease in the luminous efficiency of the phosphor due to the heat generation of the LED chip 10 can be suppressed.

さらに、本実施形態では、実装基板20の上記一表面において光学部材60の開口部の端縁に重なるリング状の部位と、保護カバー70の開口部の端縁に重なるリング状の部位との間に配置されて、各樹脂溜め用穴27を覆うリング状の光吸収防止用基板140を備えている(図11及び図14参照)。この光吸収防止用基板140は、実装基板20側とは反対側の表面にLEDチップ10や保護カバー70などからの光を反射する白色系のレジスト層が形成されているので、各樹脂溜め用穴27内に溜まって硬化した封止樹脂からなる樹脂部によって上記の光が吸収されるのを防止することができる。なお光吸収防止用基板140は、光学部材60を実装基板20の所定位置に配置する際に溢れ出た封止樹脂が各樹脂溜め用穴27内に充填された後で、実装基板20の上記一表面側に載置すれば良く、その後で封止樹脂を硬化させる際に封止樹脂により実装基板20に固着されることになる。ここで、リング状の光吸収防止用基板140には、図12及び図14に示すように各樹脂溜め用穴27の微少領域を露出させる複数の切欠部142が形成されているので、樹脂溜め用穴27内の封止樹脂を硬化させる際に空気が抜けやすく、ボイドの発生を抑制することができる。   Furthermore, in the present embodiment, between the ring-shaped portion that overlaps the edge of the opening of the optical member 60 and the ring-shaped portion that overlaps the edge of the opening of the protective cover 70 on the one surface of the mounting substrate 20. And a ring-shaped light absorption preventing substrate 140 covering each resin reservoir hole 27 (see FIGS. 11 and 14). The light absorption preventing substrate 140 has a white resist layer that reflects light from the LED chip 10 and the protective cover 70 on the surface opposite to the mounting substrate 20 side. It is possible to prevent the light from being absorbed by the resin portion made of the sealing resin that has accumulated in the hole 27 and is cured. The light absorption preventing substrate 140 is filled with the sealing resin overflowing when the optical member 60 is arranged at a predetermined position of the mounting substrate 20 in each resin reservoir hole 27, and then the above-mentioned of the mounting substrate 20. What is necessary is just to mount on one surface side, and when hardening sealing resin after that, it will adhere to the mounting board | substrate 20 with sealing resin. Here, as shown in FIGS. 12 and 14, the ring-shaped light absorption preventing substrate 140 is formed with a plurality of notches 142 for exposing minute regions of the resin reservoir holes 27. When the sealing resin in the service hole 27 is cured, air can easily escape and generation of voids can be suppressed.

ここにおいて、本実施形態における発光装置1では、複数の樹脂溜め用穴27が光学部材60の外周方向に離間して複数設けられているので、実装基板20の上記一表面において光学部材60の端縁に重なる部位と、保護カバー70の端縁に重なる部位との間の距離を短くしながらも、実装基板20の上記一表面上に封止樹脂からなる不要部が形成されるのを抑制することができ、またリードパターン23,23が樹脂溜め用穴27によって分離されるのを防止することができるから、LEDチップ10への給電路の低抵抗化を図ることができる。   Here, in the light emitting device 1 according to the present embodiment, since the plurality of resin reservoir holes 27 are provided apart from each other in the outer peripheral direction of the optical member 60, the end of the optical member 60 is formed on the one surface of the mounting substrate 20. While the distance between the portion overlapping the edge and the portion overlapping the edge of the protective cover 70 is shortened, the formation of an unnecessary portion made of the sealing resin on the one surface of the mounting substrate 20 is suppressed. In addition, since the lead patterns 23 and 23 can be prevented from being separated by the resin reservoir hole 27, the resistance of the power supply path to the LED chip 10 can be reduced.

なお、上述の各実施形態ではLEDチップ10として発光色が青色の青色LEDチップを採用しており、結晶成長用基板である導電性基板11としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いても良く、SiC基板やGaN基板を用いた場合には、結晶成長用基板として絶縁体であるサファイア基板を用いた場合に比べて、結晶成長用基板の熱伝導率が高く、結晶成長用基板の熱抵抗を小さくできる。またLEDチップ10の発光色も青色に限らず、例えば赤色や緑色などでもよい。すなわちLEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよく、発光部12の材料に応じて結晶成長用基板の材料を適宜選択すればよい。   In each of the above-described embodiments, a blue LED chip whose emission color is blue is adopted as the LED chip 10 and a SiC substrate is adopted as the conductive substrate 11 which is a substrate for crystal growth, but instead of the SiC substrate. A GaN substrate may be used, and when a SiC substrate or a GaN substrate is used, the thermal conductivity of the crystal growth substrate is higher than when a sapphire substrate as an insulator is used as the crystal growth substrate. The thermal resistance of the crystal growth substrate can be reduced. The light emission color of the LED chip 10 is not limited to blue, and may be red or green, for example. That is, the material of the light emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. The material for the crystal growth substrate may be appropriately selected according to the material of the portion 12.

また、上述の各実施形態では、サブマウント部材30にLEDチップ10が1つしか実装されていないが、サブマウント部材30に複数個のLEDチップ10を実装しても良い。サブマウント部材30に複数個のLEDチップ10を実装する場合、異なる波長の光をそれぞれ照射する複数種類のLEDチップ10を実装すれば、複数種類のLEDチップ10からの照射光を混色することによって、所望の発光色を得ることができる。この場合には保護カバー70に色変換の機能を持たせる必要はなく、保護カバー70を透光性材料のみで形成し、単なる保護のみの目的で保護カバー70を用いても良い。   In each embodiment described above, only one LED chip 10 is mounted on the submount member 30, but a plurality of LED chips 10 may be mounted on the submount member 30. When a plurality of LED chips 10 are mounted on the submount member 30, if a plurality of types of LED chips 10 that irradiate light of different wavelengths are mounted, the light emitted from the plurality of types of LED chips 10 is mixed. A desired luminescent color can be obtained. In this case, the protective cover 70 does not need to have a color conversion function, and the protective cover 70 may be formed of only a translucent material, and the protective cover 70 may be used only for the purpose of protection.

なお、本発明の精神と範囲に反することなしに、広範に異なる実施形態を構成することができることは明白なので、この発明は、特定の実施形態に制約されるものではない。   It should be noted that a wide variety of different embodiments can be configured without departing from the spirit and scope of the present invention, and the present invention is not limited to a specific embodiment.

実施形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment. 同上を示し、一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view which showed the same and partially fractured | ruptured. 同上を示す要部概略平面図である。It is a principal part schematic plan view which shows the same as the above. 実施形態2を示す概略断面図である。FIG. 6 is a schematic cross-sectional view showing a second embodiment. 同上を示し、一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view which showed the same and partially fractured | ruptured. 同上における配線基板の概略平面図である。It is a schematic plan view of the wiring board in the same as the above. 同上の製造方法を説明する概略断面図である。It is a schematic sectional drawing explaining the manufacturing method same as the above. 同上の他の製造方法を説明する概略断面図である。It is a schematic sectional drawing explaining the other manufacturing method same as the above. 実施形態3を示す概略断面図である。FIG. 6 is a schematic cross-sectional view showing a third embodiment. 同上の製造方法を説明する概略断面図である。It is a schematic sectional drawing explaining the manufacturing method same as the above. 実施形態4を示す概略断面図である。FIG. 6 is a schematic cross-sectional view showing a fourth embodiment. 同上の一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view fractured | ruptured partially same as the above. 同上の製造方法の説明図である。It is explanatory drawing of a manufacturing method same as the above. 同上の概略分解斜視図である。It is a schematic exploded perspective view same as the above.

符号の説明Explanation of symbols

1 発光装置
10 LEDチップ
14 ボンディングワイヤ
20 実装基板
21 金属板(伝熱板)
22 配線基板
22a 絶縁性基材
23 リードパターン
30 サブマウント部材
50 封止部
60 光学部材
70 保護カバー
DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 LED chip 14 Bonding wire 20 Mounting board 21 Metal plate (heat-transfer plate)
22 Wiring Board 22a Insulating Base Material 23 Lead Pattern 30 Submount Member 50 Sealing Portion 60 Optical Member 70 Protective Cover

Claims (1)

LEDチップと、LEDチップが搭載された実装基板と、透光性材料により形成されてLEDチップおよび当該LEDチップの電極に電気的に接続されたボンディングワイヤを封止する封止部と、封止部を透過したLEDチップからの放射光の配光を制御する光学部材と、透光性材料を少なくとも含む材料により形成されて光学部材を覆うようにして実装基板に配置された保護カバーとを備え、LEDチップは、実装基板側の一表面にアノード電極又はカソード電極の内の一方が形成されるとともに、他表面にアノード電極又はカソード電極の内の他方が形成されており、前記実装基板は、熱伝導性材料からなりLEDチップが搭載される伝熱板と、伝熱板におけるLEDチップの非搭載部位に積層され、LEDチップの電極にボンディングワイヤを介して電気的に接続されるリードパターンが伝熱板と反対側の表面に形成された絶縁性基材とからなり、伝熱板におけるLEDチップの搭載部位にサブマウント部材を配置し、当該サブマウント部材を介してLEDチップを伝熱板に搭載してあり、サブマウント部材の材料を、導体又は半導体の何れかであってLEDチップの材料と線膨張率が略同じ材料とし、サブマウント部材にLEDチップの一方の電極を電気的に接続するとともに、サブマウント部材と上記リードパターンの間を上記ボンディングワイヤを介して電気的に接続したことを特徴とする発光装置。   An LED chip, a mounting substrate on which the LED chip is mounted, a sealing portion that seals the LED chip and a bonding wire that is electrically connected to the electrode of the LED chip formed of a translucent material, and sealing An optical member that controls the light distribution of the emitted light from the LED chip that has passed through the portion, and a protective cover that is formed of a material containing at least a light-transmitting material and is disposed on the mounting substrate so as to cover the optical member In the LED chip, one of the anode electrode and the cathode electrode is formed on one surface of the mounting substrate side, and the other of the anode electrode and the cathode electrode is formed on the other surface. A heat transfer plate made of a thermally conductive material on which the LED chip is mounted, and laminated on the LED chip non-mounting portion of the heat transfer plate and bonded to the LED chip electrode The lead pattern that is electrically connected through the ear is made of an insulating base formed on the surface opposite to the heat transfer plate, and a submount member is arranged on the mounting portion of the LED chip on the heat transfer plate, The LED chip is mounted on the heat transfer plate via the submount member, and the material of the submount member is either a conductor or a semiconductor and has a linear expansion coefficient substantially the same as the material of the LED chip. A light-emitting device, wherein one electrode of an LED chip is electrically connected to a mount member, and the sub-mount member and the lead pattern are electrically connected via the bonding wire.
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