JP2007103600A - Apparatus and method for processing plasma - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and plasma processing method capable of suppressing arcing while shortening tact time. <P>SOLUTION: A plasma processing apparatus is used which comprises a plasma generator 1 equipped with counter electrodes 4a and 4b, dielectrics 3a and 3b, and pulse power supply 5 as well as a plasma generator 2 equipped with counter electrodes 12a and 12b, dielectrics 11a and 11b, and pulse power supply 13. The plasma generator 1 and the plasma generator 2 are so arranged that the plasma generator 1 comes farther away from a substrate 20 than the plasma generator 2, and the gas made into plasma by the plasma generator 1 passes the plasma generator 2 and is jetted against the substrate 20 along with the gas made into plasma by the plasma generator 2. The intensity of electric field between the counter electrodes 4a and 4b is set larger than that between the counter electrodes 12a and 12b. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method.

  2. Description of the Related Art Conventionally, in the field of manufacturing semiconductor devices, plasma processing is used in which plasma is generated in a chamber, thereby forming a film, etching, or the like. As an example of plasma processing, dry etching and plasma CVD (chemical vapor deposition) are known.

  Dry etching is a method of performing etching by supplying an etching gas into a chamber, converting it into plasma, and further attaching an etchant (etching seed) to a film formed on the substrate surface. Plasma CVD is a method in which a source gas is supplied into a chamber, which is turned into plasma and a film is deposited by a chemical reaction.

  By the way, in conventional general plasma processing, generation of plasma is performed under a low pressure. For this reason, since a vacuum vessel and an evacuation device are required, the plasma processing apparatus is expensive and requires a larger installation space.

  In order to solve such a problem, a normal pressure plasma treatment for generating plasma under normal pressure has been proposed (for example, see Patent Document 1). The atmospheric pressure plasma treatment eliminates the need for a vacuum vessel or a vacuum exhaust device, and thus reduces the device price and installation space.

  FIG. 3 is a cross-sectional view showing a configuration of a conventional atmospheric pressure plasma processing apparatus. The plasma processing apparatus shown in FIG. 3 is an etching apparatus. As shown in FIG. 3, the plasma processing apparatus includes a pair of counter electrodes 42a and 42b, a pair of plate-like dielectrics 45a and 45b arranged on the counter surface of each counter electrode, and a pulse electric field between the counter electrodes. A pulse power supply 41 to be applied.

The dielectric bodies 45a and 45b are arranged in a chamber (not shown) so that the opposing surfaces thereof are parallel to the normal line of the substrate 47 to be processed. An etching gas 43 is supplied between the dielectrics 45a and 45b from above. Examples of the etching gas 43 include a mixed gas containing a halogen-based gas such as CF ₄ gas and CHF ₃ gas, O ₂ gas, and H ₂ O gas.

When a pulse electric field is applied by the pulse power supply 41 along with the supply of the etching gas 43, plasma 44 is generated between the dielectric 45a and the dielectric 45b. As a result, plasmaized gas 46 is blown onto the substrate 47, and etching proceeds on the substrate 47.
JP-A-2002-237480 (FIG. 3) 12-34

  However, in the case of using the atmospheric pressure plasma processing apparatus, it is necessary to increase the electric field strength of the pulse electric field applied between the electrodes in order to shorten the tact time. For this reason, in the atmospheric pressure plasma processing apparatus, there is a problem that the arc discharge 48 is likely to occur between the electrodes 42a and 42b and the substrate 47, thereby damaging the substrate 47.

  An object of the present invention is to provide a plasma processing apparatus and a plasma processing method capable of suppressing the occurrence of arc discharge while solving the above problems and shortening the tact time.

  In order to achieve the above object, a plasma processing apparatus according to the present invention is a plasma processing apparatus that performs plasma processing under normal pressure, for supplying a plurality of plasma generation units and a gas to each of the plurality of plasma generation units. A plurality of gas supply ports, and each of the plurality of plasma generation units applies a pulse electric field between the counter electrode, a dielectric disposed on each of the counter surfaces of the counter electrode, and the counter electrode, A pulse power source that converts the supplied gas into plasma, and the gas that has been converted into plasma by one of the plurality of plasma generation units in order along a direction away from the object to be processed. Are arranged so as to be blown to the object to be processed through the plasma generating part located near the object to be processed, and each of the pulses of the plurality of plasma generating parts The electric field strength of the pulse electric field applied by the source is set to a value larger than the electric field strength of the pulse electric field applied by the pulse power source of the plasma generation unit located closer to the object to be processed. To do.

  In order to achieve the above object, the plasma processing method according to the present invention applies a pulse electric field between the counter electrode, a dielectric disposed on each counter surface of the counter electrode, and the counter electrode, and A plurality of plasma generators having a pulse power source for converting the gas supplied between the bodies into plasma, and a plurality of the plasma generators are arranged in order along a direction away from the object to be processed. Arranged so that the gas plasmified by one of the plasma generators is blown to the object to be processed through the plasma generator located closer to the object to be processed, and under normal pressure A plasma processing method of performing plasma processing at a plurality of plasma generators, wherein the gas is supplied to each of a plurality of plasma generators, The electric field strength of the pulse electric field applied by the pulsed power source is set to a value larger than the electric field strength of the pulse electric field applied by the pulse power source of the plasma generator at a position closer to the object to be processed. It has the process of making gas into plasma.

  Due to the above characteristics, according to the plasma processing apparatus and the plasma processing method of the present invention, for example, for a gas that has a small binding energy and can be converted to plasma with a small electric field strength, Generator). In addition, a gas that has a large binding energy and requires a large electric field strength for plasmification can be plasmified by a plasma generation unit located far from the object to be processed. Furthermore, since the gas converted into plasma by the plasma generation unit located far from the processing target reaches the processing target through the plasma generation unit located closer to the processing target than the processing target, Even if plasma is formed at a distant position, the decrease in etchant is suppressed. For this reason, according to the plasma processing apparatus and the plasma processing method of the present invention, it is possible to suppress the occurrence of arc discharge as compared with the prior art while reducing the tact time under normal pressure.

  The plasma processing apparatus according to the present invention is a plasma processing apparatus that performs plasma processing under normal pressure, and includes a plurality of plasma generation units and a plurality of gas supply ports for supplying gas to each of the plurality of plasma generation units. Each of the plurality of plasma generators applies a pulse electric field between the counter electrode, a dielectric disposed on each of the counter surfaces of the counter electrode, and the counter electrode, and plasmas the supplied gas. And the gas converted into plasma by one of the plurality of plasma generation units in order along the direction away from the processing object, is closer to the processing object than that. A pulse electric field which is arranged so as to be sprayed to the object to be processed through the plasma generation unit at a position, and is applied by a pulse power source of each of the plurality of plasma generation units Field strength, characterized in that it is set to a value larger than the pulse electric field electric field intensity of the pulsed power is applied in the plasma generating portion is positioned closer to the processing object than that.

  In the plasma processing apparatus according to the present invention, two plasma generation units may be provided. In the above aspect, the plasma is located on the upper side of the dielectric of the plasma generating unit located far from the processing object, and near the dielectric of the plasma generating unit located far from the processing target and the processing target. It is preferable that the gas supply port is provided between each of the dielectrics of the generation unit. In this case, the plasma-ized gas of the plasma generation unit located at a position far from the processing object can be easily sent to the plasma generation unit located near the processing object.

In the above aspect, the plasma generating unit located far from the processing object among the two plasma generating units has a binding energy higher than the gas supplied to the plasma generating unit located near the processing target. A large gas may be supplied. In this case, the gas supplied to the plasma generator located far from the object to be processed includes a halogen-based gas, and the gas supplied to the plasma generator near the object to be processed is O _2. A gas containing at least one kind of gas and H ₂ O gas, preferably a gas containing both O ₂ gas and H ₂ O gas.

  Further, in the above aspect, the gas supplied to the plasma generation unit located far from the processing object and the gas supplied to the plasma generation unit located near the processing object both contain chlorine gas. It may be a gas containing. This is effective for metal etching.

  Further, in the above aspect, the electric field intensity of the pulse electric field by the pulse power source of the plasma generation unit located far from the processing object is set in a range of 200 kV / cm or more and less than 1000 kV / cm, and the processing object It is preferable that the electric field strength of the pulse electric field generated by the pulse power source of the plasma generation unit located at a position close to is set in a range of 1 kV / cm or more and less than 200 kV / cm. Further, in the above aspect, the frequency of the pulse electric field by the pulse power source of the plasma generation unit located at a position far from the processing object and the frequency of the pulse electric field by the pulse power source of the plasma generation unit located at a position near the processing object are: It is preferably set within the range of 0.5 kHz to 100 kHz.

  In the plasma processing method of the present invention, a counter electrode, a dielectric disposed on each counter surface of the counter electrode, a pulse electric field is applied between the counter electrodes, and a gas supplied between the dielectrics is converted into plasma. A plurality of plasma generators having a pulse power source to be activated; and further, the plurality of plasma generators are sequentially arranged in a direction away from the object to be processed, and one of the plurality of plasma generators. In the plasma processing method, the gas converted into plasma is disposed so that the gas is blown onto the processing object through a plasma generation apparatus located closer to the processing object than that, and plasma processing is performed under normal pressure. A pulse electric field that supplies the gas to each of the plurality of plasma generators and is applied by a pulse power source of each of the plurality of plasma generators A step of setting the electric field strength to a value larger than the electric field strength of the pulse electric field applied by the pulse power source of the plasma generating apparatus located at a position closer to the object to be processed, and converting the supplied gas into plasma. It is characterized by that.

In the plasma processing method according to the present invention, two plasma generators may be used. In the above aspect, of the two plasma generators, the plasma generator at a position far from the object to be processed has a binding energy from the gas supplied to the plasma generator at a position near the object to be processed. A large gas may be supplied. In this case, the gas supplied to the plasma generator located far from the object to be processed includes a halogen-based gas, and the gas supplied to the plasma generator near the object to be processed includes gas containing at least one of O ₂ gas and H ₂ O gas, and the like, preferably a gas containing both of the O ₂ gas and H ₂ O gas.

  Further, in the above aspect, the gas supplied to the plasma generation unit located far from the processing object and the gas supplied to the plasma generation unit located near the processing object both contain chlorine gas. It may be a gas containing.

  Moreover, in the said aspect, the electric field strength of the pulse electric field by the pulse power supply of the plasma generator located in the position far from the said process target is set in the range of 200 kV / cm or more and less than 1000 kV / cm, The said process target It is preferable that the electric field strength of the pulse electric field generated by the pulse power source of the plasma generating apparatus located near the position is set in the range of 1 kV / cm or more and less than 200 kV / cm. Further, in the above aspect, the frequency of the pulse electric field generated by the pulse power source of the plasma generator located at a position far from the object to be processed and the frequency of the pulse electric field generated by the pulse power source of the plasma generator located near the object to be processed are: It is preferably set within the range of 0.5 kHz to 100 kHz.

(Embodiment)
Hereinafter, a plasma processing apparatus and a plasma processing method according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view showing a configuration of a plasma processing apparatus according to an embodiment of the present invention. 2 is an enlarged view of the gas supply port of the plasma processing apparatus shown in FIG. 1, FIG. 2 (a) is an enlarged cross-sectional view of FIG. 1, and FIG. 2 (b) is in FIG. 2 (a). It is sectional drawing obtained by cut | disconnecting along cutting line AA '.

  As shown in FIG. 1, in the present embodiment, a plasma processing apparatus 10 includes a plasma generator (plasma generator) 1 and a plasma generator (plasma generator) 2. Although not shown, the plasma processing apparatus 10 includes a chamber, and the plasma generating unit 1, the plasma generating unit 2, and the substrate 20 to be processed are arranged in the chamber. Furthermore, the pressure in the chamber is maintained at a normal pressure, and the plasma processing apparatus 10 is a normal pressure plasma processing apparatus. Although not shown, a duct for exhausting the gas used for the plasma processing is connected to the chamber.

  The plasma generator 1 includes counter electrodes 4 a and 4 b, dielectrics 3 a and 3 b, and a pulse power source 5. One dielectric 3a is disposed on the facing surface of one counter electrode 4a, and the other dielectric 3b is disposed on the facing surface of the other counter electrode 4b. The pulse power source 5 applies a pulse electric field between one counter electrode 4a and the other counter electrode 4b.

  The plasma generator 2 also includes counter electrodes 12a and 12b, dielectrics 11a and 11b, and a pulse power source 13. One dielectric 11a is disposed on the facing surface of one counter electrode 12a, and the other dielectric 11b is disposed on the facing surface of the other counter electrode 12b. The pulse power supply 13 applies a pulse electric field between one counter electrode 12a and the other counter electrode 12b.

  In the plasma processing apparatus 10, the electric field strength of the pulse electric field applied by the pulse power source 5 is set to a value larger than the electric field strength of the pulse electric field applied by the pulse power source 13. This point will be described later.

  Further, in the present embodiment, the plasma processing apparatus 10 further includes a gas supply unit 6 provided with a gas supply port 6a and a gas supply unit 14 provided with a gas supply port 14a (see FIG. 2). ing. The gas supply port 6 a is used for supplying the gas 8 to the plasma generator 1, and the gas supply port 14 a is used for supplying the gas 17 to the plasma generator 2.

  In the present embodiment, the gas supply unit 6 is a cap provided with a through hole 6b, and is disposed above the dielectrics 3a and 3b (upper side in FIG. 1). The openings on the dielectric 3a and 3b side of the through hole 6b serve as the gas supply port 6a. The gas supply unit 6 is connected to a gas supply device 7. The gas supply device 7 includes a flow meter 7a, a valve 7b, and a cylinder 7c filled with a gas 8.

  When the gas 8 is sent from the gas supply device 7, the gas 8 flows from above to below between the dielectric 3a and the dielectric 3b. At this time, when a pulse electric field is applied between the counter electrode 4a and the counter electrode 4b by the pulse power source 5, the gas 8 is turned into plasma. 9 indicates plasma. In the present invention, “plasmaization” means that a gas supplied between dielectrics is decomposed by plasma to generate a reactive gas containing an etchant. Furthermore, “plasmaized gas” refers to this reactive gas.

  One gas supply unit 14 is disposed between the dielectric 3a and the dielectric 11a and one between the dielectric 3b and the dielectric 11b. Reference numeral 15 denotes a spacer for attaching the gas supply unit 14. As shown in FIG. 2B, in the present embodiment, the gas supply unit 14 includes a supply pipe 14b and a discharge pipe 14c closed at both ends. The discharge pipe 14c and the supply pipe 14b are perpendicular to each other, and the gas supply unit 14 has a T-shape. Further, the gas supply unit 14 is arranged so that the discharge tube 14c does not protrude from the facing surfaces of the dielectrics 3a and 3b and the facing surfaces of the dielectrics 11a and 11b.

  The discharge pipe 14c of the gas supply unit 14 is provided with a plurality of through holes arranged in a row. The opening outside each through hole is a gas supply port 14a. The plurality of through holes are formed obliquely downward so that the gas supply port 14a faces the dielectric 11a or 11b at the opposing position. For this reason, the gas 17 is emitted toward the dielectric 11a or 11b.

  Further, as shown in FIG. 1, both of the two gas supply units 14 are connected to a gas supply device 16. In FIG. 1, the illustration of the connection between one gas supply unit 14 and the gas supply device 16 is omitted. The gas supply device 16 includes two cylinders 16c and 16d having different filled gas types. The gas supply device 16 includes a flow meter 16a and a valve 16b for each cylinder. In the present embodiment, the gas 17 is a mixed gas. This point will be described later.

  When the gas 17 is sent from the gas supply device 16, the gas 17 flows from above to below between the dielectric 11a and the dielectric 11b. At this time, when a pulse electric field is applied between the counter electrode 12a and the counter electrode 12b by the pulse power source 13, the gas 17 is turned into plasma. Reference numeral 18 denotes plasma.

  In the present embodiment, the gas supply unit 14 has a T-shape and is provided with two, but the shape and number of the gas supply units 14 are not limited thereto. The number of gas supply units 14 may be one, or may be three or more. Moreover, the shape of the gas supply part 14 should just be a shape which can send the gas 17 to the plasma generation part 2. FIG.

  Moreover, as shown in FIG. 1, the plasma generation part 1 and the plasma generation part 2 are arrange | positioned in order in the direction away from the board | substrate 20 used as a process target object. In the present embodiment, the plasma generation unit 1 and the plasma generation unit 2 are arranged above the substrate so that the plasma generation unit 1 is farther from the substrate 20 than the plasma generation unit 2. Further, above the substrate 20, the dielectric 3a and the dielectric 11a are arranged in series. Similarly, the dielectric 3b and the dielectric 11b are also arranged in series.

  Therefore, the gas converted into plasma by the plasma generator 1 is sent to the plasma generator 2 by the pressure from the gas supply device 7, passes through this, and together with the gas converted into plasma by the plasma generator 2, the substrate 20. Is sprayed on. Reference numeral 19 denotes a plasmatized gas 8 and a plasmatized gas 17.

  Further, the plasma processing apparatus 10 having such a configuration can be used as either a dry etching apparatus or an ashing apparatus. Further, the substrate 20 to be processed may be a semiconductor substrate or a glass substrate constituting a display device.

  For example, when the plasma processing apparatus 10 is used as a dry etching apparatus, an insulating film such as a silicon oxide film or a silicon nitride film formed on a substrate, a silicon film for forming a thin film transistor, or a metal film for wiring Such various films (not shown) are to be etched. Although not shown in FIG. 1, the plasma processing apparatus 10 includes a transfer device for transferring the substrate 20 along the surface direction. For this reason, the plasma processing apparatus 10 can perform plasma processing on the entire substrate 20.

  Next, a plasma processing method in the embodiment of the present invention will be described. However, the plasma processing method in the present embodiment is performed by operating the plasma processing apparatus 10 in the present embodiment shown in FIGS. 1 and 2. In the following description, FIGS. 1 and 2 are referred to as appropriate. Further, in the following description, a case where the plasma processing apparatus 10 is used as a dry etching apparatus and a silicon film formed on the substrate 20 to be processed is an etching target will be described as an example.

  First, a pulse electric field is applied between the counter electrodes 4a and 4b by the pulse power source 5 while supplying the gas 8 between the dielectrics 3a and 3b. As a result, the gas 8 is turned into plasma and an etchant is generated. Further, the gas 8 converted into plasma by the pressure at the time of supply of the gas 8 is sent to the second pulse generator 2, that is, between the dielectrics 11a and 11b.

At this time, in the present embodiment, the cylinder 7c which CF ₄ gas is filled, CF ₄ gas is supplied as a gas 8. Further, since the binding energy of CF ₄ gas is 5.6 eV, the electric field strength of the pulse electric field by the pulse power source 5 (the electric field strength between the counter electrodes 4a and 4b) is in the range of 200 kV / cm or more and less than 1000 kV / cm. Is set. Furthermore, the frequency of the pulse electric field generated by the pulse power supply 5 is set within a range of 0.5 kHz to 100 kHz. In the present embodiment, a halogen-based gas other than CF ₄ gas, for example, CHF ₃ gas (binding energy: 2.4 eV to 8.3 eV) can also be used.

  Next, a pulse electric field is applied between the counter electrodes 12a and 12b by the pulse power source 13 while supplying the gas 17 between the dielectrics 11a and 11b. As a result, the gas 17 is turned into plasma and an etchant is generated. Further, the gas 17 that has been converted to plasma is sprayed onto the substrate 20 together with the gas 8 that has been converted to plasma by the plasma generator 1.

At this time, in the present embodiment, a gas whose binding energy is smaller than the binding energy of the gas 8 is used as the gas 17. In this example, a mixed gas of O ₂ gas having a binding energy of 5.1 eV and H ₂ O gas having a binding energy of 4.8 eV is used. That is, the cylinder 16c is filled with O ₂ gas, and the cylinder 16d is filled with H ₂ O gas.

  Further, since the binding energy of the gas 17 is smaller than the binding energy of the gas 8, the electric field strength of the pulse electric field by the pulse power source 13 is set to a value smaller than that of the pulse power source 5. For example, in this case, the electric field strength of the pulse electric field by the pulse power source 13 (the electric field strength between the counter electrodes 12a and 12b) is set in a range of 1 kV / cm or more and less than 200 kV / cm. Further, the frequency of the pulse electric field generated by the pulse power supply 13 is set within a range of 0.5 kHz to 100 kHz, similarly to the pulse power supply 5.

  Through the above steps, the etchant generated in the plasma generation unit 1 and the etchant generated in the plasma generation unit 2 are adsorbed to the film on the substrate 20 that is the object to be processed. As a result, etching proceeds in the film.

  As described above, in the present embodiment, a gas that has a large binding energy and requires a large electric field strength to be turned into plasma is turned into plasma at the plasma generation unit 1 located far from the substrate 20. On the other hand, a gas that has a low binding energy and can be converted to plasma with a relatively small electric field strength is converted to plasma by the plasma generator 2 located near the substrate 20.

For this reason, according to the present embodiment, unlike the conventional atmospheric pressure plasma processing apparatus, it is possible to suppress the occurrence of arc discharge while shortening the tact time. In the present embodiment, the CF ₄ gas is converted into plasma at a position far from the substrate 47. However, since the CF ₄ gas passes through the plasma generation unit 2 after being converted into plasma, the etchant (etching species) is reduced. Is suppressed. Therefore, a decrease in etching efficiency due to the formation of plasma at a position away from the processing object is also suppressed.

  In the present embodiment, the gas 8 supplied to the plasma generator 1 and the gas 17 supplied to the plasma generator 2 are not particularly limited. As described above, the gas 8 may be a gas having higher binding energy than the gas 17, or the same gas may be used as the gas 8 and the gas 17. What is necessary is just to set the kind of the gas 8 and the gas 17 suitably according to a process target object.

For example, when an etching process is performed and the etching target is an aluminum thin film formed on a substrate, chlorine (Cl ₂ ) gas (binding energy: 2.5 eV) is used as the gas 8 and the gas 17. Mainly contained gas can be used.

  In the present invention, the number of plasma generators (plasma generators) is not particularly limited. The number of plasma generators may be set as appropriate according to the object to be processed and the type of gas used. In addition, the shape of the dielectric, electrode, and gas supply unit constituting the plasma generation unit is not particularly limited. These shapes can be appropriately set according to the use of the plasma processing apparatus and the processing object.

  The plasma processing apparatus and the plasma processing method of the present invention can be used, for example, for manufacturing an active matrix substrate constituting a display device and manufacturing a semiconductor device. The plasma processing apparatus and the plasma processing method of the present invention have industrial applicability.

It is sectional drawing which shows the structure of the plasma processing apparatus in embodiment of this invention. It is a figure which expands and shows the gas supply port of the plasma processing apparatus shown in FIG. 1, Fig.2 (a) is an expanded sectional view of FIG. 1, FIG.2 (b) is the cutting line A in FIG.2 (a). It is sectional drawing obtained by cut | disconnecting along -A '. It is sectional drawing which shows the structure of the conventional normal pressure plasma processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Plasma generating part 2 Plasma generating part 3a, 3b Dielectric material 4a, 4b 1st electrode 5 Pulse power supply 6 Gas supply part 6a Gas supply port 6b Through-hole 7 Gas supply apparatus 7a Flowmeter of gas supply apparatus 7b Gas supply apparatus Valve 7c Gas supply cylinder 8 Gas 9, 18 Plasma 10 Plasma processing apparatus 11a, 11b Dielectric 12a, 12b Second electrode 13 Pulse power supply 14 Gas supply unit 14a Gas supply port 14b Supply pipe 14c Release pipe 15 Spacer 16 Gas Supply device 16a Gas supply device flow meter 16b Gas supply device valve 16c, 16d Gas supply cylinder 17 Gas 19 Plasmaized gas 20 Substrate

Claims (15)

A plasma processing apparatus for performing plasma processing under normal pressure,
A plurality of plasma generation units, and a plurality of gas supply ports for supplying gas to each of the plurality of plasma generation units,
Each of the plurality of plasma generation units applies a pulse electric field between the counter electrode, a dielectric disposed on each of the counter surfaces of the counter electrode, and the counter electrode, and converts the supplied gas into plasma. And a gas that is converted into plasma by one of the plurality of plasma generation units in a direction along the direction away from the processing object, at a position closer to the processing object than that. Arranged to be sprayed onto the object to be processed through a plasma generator,
The electric field strength of the pulse electric field applied by the pulse power source of each of the plurality of plasma generating units is larger than the electric field strength of the pulse electric field applied by the pulse power source of the plasma generating unit located closer to the object to be processed. The plasma processing apparatus is characterized by being set.   The plasma processing apparatus according to claim 1, wherein two plasma generation units are provided.   The upper side of the dielectric of the plasma generator at a position far from the object to be processed, the dielectric of the plasma generator at a position far from the object to be processed, and the dielectric of the plasma generator at a position near the object to be processed The plasma processing apparatus according to claim 2, wherein each of the gas supply ports is provided between the two.   Of the two plasma generators, a plasma generator located far from the object to be processed is supplied with a gas having a higher binding energy than a gas supplied to the plasma generator near the object to be processed. The plasma processing apparatus according to claim 2 or 3. The gas supplied to the plasma generation unit at a position far from the processing target is a halogen-based gas, and the gases supplied to the plasma generation unit at a position near the processing target are O ₂ gas and H _2. The plasma processing apparatus according to claim 4, wherein the plasma processing apparatus includes at least one kind of O gas.   The gas supplied to the plasma generation unit located far from the processing object and the gas supplied to the plasma generation unit located near the processing object are both gas containing chlorine gas. Or the plasma processing apparatus of 3.   The electric field intensity of the pulsed electric field generated by the pulse power supply of the plasma generation unit located far from the processing object is set in a range of 200 kV / cm or more and less than 1000 kV / cm, and the plasma generation located near the processing object The plasma processing apparatus according to any one of claims 2 to 6, wherein the electric field intensity of the pulse electric field generated by the pulse power supply of the unit is set in a range of 1 kV / cm or more and less than 200 kV / cm.   The frequency of the pulse electric field generated by the pulse power source of the plasma generating unit located at a position far from the object to be processed and the frequency of the pulse electric field generated by the pulse power source of the plasma generating unit positioned near the object to be processed are in the range of 0.5 kHz to 100 kHz. The plasma processing apparatus according to any one of claims 2 to 7, wherein the plasma processing apparatus is set in the inside. A plasma having a counter electrode, a dielectric disposed on each of the opposing surfaces of the counter electrode, and a pulse power source that applies a pulse electric field between the counter electrodes to convert the gas supplied between the dielectrics into plasma. A plurality of generators are used, and further, the plurality of plasma generators are sequentially turned in a direction away from the object to be processed, and the gas converted into plasma by one of the plurality of plasma generators is A plasma processing method for performing plasma processing under normal pressure by being arranged so as to be sprayed to the processing object through a plasma generator located closer to the processing object than that,
The gas is supplied to each of the plurality of plasma generators, and the electric field intensity of the pulse electric field applied by the pulse power supply of each of the plurality of plasma generators is generated at a position closer to the object to be processed than that. A plasma processing method, comprising: setting a value larger than the electric field intensity of a pulse electric field applied by a pulse power source of the apparatus and converting the supplied gas into plasma.   The plasma processing method according to claim 9, wherein two plasma generators are used.   Of the two plasma generators, a plasma generator located far from the object to be processed is supplied with a gas having a higher binding energy than the gas supplied to the plasma generator located near the object to be processed. The plasma processing method according to claim 10. The gas supplied to the plasma generator at a position far from the object to be processed is a halogen-based gas, and the gases supplied to the plasma generator near to the object to be processed are O ₂ gas and H _2. The plasma processing method according to claim 11, wherein the gas contains at least one of O gases.   The gas supplied to the plasma generation unit located far from the processing object and the gas supplied to the plasma generation unit located near the processing object are both gas containing chlorine gas. The plasma processing method as described in any one of.   The electric field intensity of the pulse electric field by the pulse power source of the plasma generator located far from the processing object is set in a range of 200 kV / cm or more and less than 1000 kV / cm, and the plasma is generated near the processing object. The plasma processing method according to any one of claims 10 to 13, wherein an electric field intensity of a pulse electric field generated by a pulse power source of the apparatus is set in a range of 1 kV / cm or more and less than 200 kV / cm. The frequency of the pulse electric field by the pulse power source of the plasma generator located at a position far from the object to be processed and the frequency of the pulse electric field by the pulse power source of the plasma generator near the object to be processed are in the range of 0.5 kHz to 100 kHz. The plasma processing method according to claim 10, wherein the plasma processing method is set within the range.

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