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JP2007173317A - Packaging method - Google Patents

Packaging method Download PDF

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Publication number
JP2007173317A
JP2007173317A JP2005365180A JP2005365180A JP2007173317A JP 2007173317 A JP2007173317 A JP 2007173317A JP 2005365180 A JP2005365180 A JP 2005365180A JP 2005365180 A JP2005365180 A JP 2005365180A JP 2007173317 A JP2007173317 A JP 2007173317A
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heat
filler
bonding material
silicon chip
metal
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JP2005365180A
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JP4693624B2 (en
Inventor
Eiji Tokuhira
英士 徳平
Hitoaki Date
仁昭 伊達
Hiromoto Uchida
浩基 内田
Minoru Ishinabe
稔 石鍋
Atsushi Taniguchi
淳 谷口
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Fujitsu Ltd
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Fujitsu Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a packaging method of a heat generating element and a heat dissipating element in which low thermal resistance and high reliability can be achieved while exhibiting excellent mass productivity. <P>SOLUTION: (a) A silicon chip 1 is coated with thermally conductive bonding material 2 produced by dispersing first filler 21 (In-Sn-Bi alloy) having a melting point lower than the temperature of the silicon chip 1 during operation, and second filler 22 excellent in thermal conductivity into thermosetting resin 23 having a curing temperature lower than the temperature of a silicon chip 1 during operation. (b) The silicon chip 1 and a heat sink 4 are aligned while interposing the coated thermally conductive bonding material 2, and then (c) they are bonded without performing heat treatment. The silicon chip 1 is operated and the first filler 21 is fused with heat generated from the silicon chip 1 during that operation thus (d) obtaining a metal joint and curing the thermosetting resin 23. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体素子などの発熱体で発生した熱を、ヒートシンク、ヒートスプレッダなどの放熱体へ伝導させて放射するために、熱伝導接合材を介して発熱体と放熱体とを実装する方法に関する。   The present invention relates to a method of mounting a heating element and a heat dissipation body via a heat conductive bonding material in order to conduct and radiate heat generated in the heating element such as a semiconductor element to a heat dissipation element such as a heat sink and a heat spreader. .

電子機器に使用される半導体素子では、近年、その高集積化、高速化などにより発熱量が著しく多くなっており、半導体素子から発せられる熱を効率良く外部へ放散する必要がある。この熱放散の一手法として、半導体素子にヒートシンクを取り付け、半導体素子で発生した熱をヒートシンクに伝えて放熱することが知られている。この際、半導体素子とヒートシンクとをそのまま接触させた場合には、それらの接合面に空隙が生じるため、熱伝導性が低下することになる。そこで、この空隙を埋めて接合界面の熱抵抗を低減して熱伝導性を向上させるために、半導体素子とヒートシンクとの間に、熱伝導性の接合材を介在させて放熱効率を高くすることが行われている。   2. Description of the Related Art In recent years, semiconductor elements used in electronic devices have a remarkably large amount of heat generated due to their high integration and high speed, and it is necessary to efficiently dissipate heat generated from the semiconductor elements to the outside. As one method of heat dissipation, it is known that a heat sink is attached to a semiconductor element, and heat generated in the semiconductor element is transmitted to the heat sink to dissipate heat. At this time, when the semiconductor element and the heat sink are brought into contact with each other as they are, voids are formed on the joint surfaces thereof, and the thermal conductivity is lowered. Therefore, in order to improve the thermal conductivity by filling the gap and reducing the thermal resistance of the bonding interface, a thermal conductive bonding material is interposed between the semiconductor element and the heat sink to increase the heat dissipation efficiency. Has been done.

このような熱的接続に使用される熱伝導接合材としては、放熱グリースと呼ばれるペースト状のもの、放熱シートまたは熱伝導性シートと呼ばれるシートタイプのものなどがある。これらは、熱伝導性が良好な無機フィラーをベースとなる樹脂に分散させて、ペースト状またはシート状にしたものである。また、銀、銅などの金属フィラーを充填した導電性ペーストも使用されている。しかしながら、これらの接合材は何れも充填されたフィラー同士の接触によって熱を伝えるので、熱抵抗が大きい。   Examples of the heat conductive bonding material used for such a thermal connection include a paste-like material called a heat radiation grease, and a sheet type material called a heat radiation sheet or a heat conductive sheet. These are obtained by dispersing an inorganic filler having good thermal conductivity in a base resin to form a paste or a sheet. In addition, a conductive paste filled with a metal filler such as silver or copper is also used. However, since all of these bonding materials transmit heat by contact between the filled fillers, the thermal resistance is large.

また、他の熱伝導接合材として、熱硬化性樹脂にはんだフィラーを充填させた接合材がある（例えば、特許文献１参照）。熱硬化性樹脂としてエポキシ系樹脂（硬化温度：約１５０〜２００℃）を使用し、はんだフィラーとしてＳｎ−Ｂｉはんだ（融点：１３８℃）を用いた場合には、樹脂の硬化温度においてはんだフィラーも溶融する。この結果、接合材中のフィラー同士、及びフィラーと発熱体または放熱体との間が、接触ではなく、はんだによって金属接合されるために、熱が伝わりやすくなって、熱抵抗を低減できる。
特開２００４−３３５８７２号公報 As another heat conductive bonding material, there is a bonding material in which a thermosetting resin is filled with a solder filler (see, for example, Patent Document 1). When an epoxy resin (curing temperature: about 150 to 200 ° C.) is used as the thermosetting resin and Sn—Bi solder (melting point: 138 ° C.) is used as the solder filler, the solder filler is also used at the resin curing temperature. Melt. As a result, the filler in the bonding material and between the filler and the heating element or the heat radiating body are not contacted but metal-bonded by solder, so that heat is easily transmitted and thermal resistance can be reduced.
JP 2004-335872 A

しかしながら、上述した手法では、実装時に加熱処理が必要である、硬化温度が高い、硬化時間が長いなどの使用条件の制約が大きく、量産性が要求される用途には適用しにくいという問題があり、改善の余地がある。   However, the above-described method has a problem that it is difficult to apply to applications requiring mass productivity because heat treatment is required at the time of mounting, the curing conditions are high, the curing conditions are long, and the usage time is long. There is room for improvement.

本発明は斯かる事情に鑑みてなされたものであり、このような使用条件の制約が無く、量産性の用途に容易に適用でき、低熱抵抗化及び高信頼性が実現可能な実装方法を提供することを目的とする。   The present invention has been made in view of such circumstances, and provides a mounting method that can be easily applied to mass-productive applications without any restrictions on such use conditions, and that can realize low thermal resistance and high reliability. The purpose is to do.

本発明に係る実装方法は、自身の動作によって発熱する発熱体に、熱伝導接合材を介して放熱体を実装する方法において、前記発熱体及び／または前記放熱体に、前記発熱体の動作時の温度より融点が低い金属を少なくとも含む熱伝導性フィラーを熱硬化性樹脂中に分散させてなる前記熱伝導接合材を塗布し、前記発熱体と前記放熱体とを、前記熱伝導接合材を介在させて位置合わせし、前記発熱体を動作させて前記金属を溶融させることを特徴とする。   The mounting method according to the present invention is a method of mounting a heat dissipating member on a heat generating element that generates heat by its own operation via a heat conductive bonding material, wherein the heat generating element and / or the heat dissipating element is operated during operation of the heat generating element. Applying the heat conductive bonding material in which a heat conductive filler containing at least a metal having a melting point lower than the temperature is dispersed in a thermosetting resin, the heat generating body and the heat radiating body, the heat conductive bonding material The positioning is performed by interposing, and the heating element is operated to melt the metal.

本発明の実装方法では、発熱体の動作時の温度より融点が低い低融点金属を少なくとも含む熱伝導性フィラーを熱硬化性樹脂中に分散させてなる熱伝導接合材を、発熱体、放熱体の一方または両方に塗布し、この塗布した熱伝導接合材を介在させて発熱体と放熱体とを位置合わせし、発熱体を動作させてその動作時の熱によって低融点金属を溶融させ、低熱抵抗の接合を実現する。発熱体の動作時に低融点金属を溶融させるので、実装時に特別な加熱処理は不要である。よって、短時間で簡便に実装を行える。この結果、量産性に優れている。また、熱伝導接合材中の熱伝導性フィラーは接触でなく、低融点金属によって金属接続されるので、熱が伝わりやすくて熱抵抗は低くなり、良好な放熱特性が得られる。   In the mounting method of the present invention, a heat conductive bonding material in which a heat conductive filler containing at least a low melting point metal having a melting point lower than the temperature at which the heat generating element operates is dispersed in a thermosetting resin. Is applied to one or both of them, and the heat-generating body and the heat-dissipating body are aligned by interposing the applied heat-conducting bonding material, the heat-generating body is operated, and the low melting point metal is melted by the heat at the time of operation. Realize resistance bonding. Since the low melting point metal is melted during operation of the heating element, no special heat treatment is required during mounting. Therefore, mounting can be performed easily in a short time. As a result, it is excellent in mass productivity. Further, since the heat conductive filler in the heat conductive bonding material is not contacted but is metal-connected by a low melting point metal, heat is easily transmitted and the thermal resistance is lowered, and good heat dissipation characteristics are obtained.

本発明に係る実装方法は、前記金属の融点が、６０〜１００℃であることを特徴とする。   The mounting method according to the present invention is characterized in that the melting point of the metal is 60 to 100 ° C.

本発明の実装方法では、熱伝導接合材に含まれる低融点金属の融点が６０〜１００℃である。よって、半導体素子などの発熱体の動作時の熱によって、この低融点金属は容易に溶融する。   In the mounting method of the present invention, the melting point of the low melting point metal contained in the heat conductive bonding material is 60 to 100 ° C. Therefore, the low melting point metal is easily melted by heat during operation of a heating element such as a semiconductor element.

本発明に係る実装方法は、前記金属が、Ｉｎ−Ｓｎ−Ｂｉ合金、及びＩｎ−Ｂｉ合金から選ばれる少なくとも１種類の合金であることを特徴とする。   The mounting method according to the present invention is characterized in that the metal is at least one kind of alloy selected from an In—Sn—Bi alloy and an In—Bi alloy.

本発明の実装方法では、熱伝導接合材に含まれる融点が６０〜１００℃の低融点金属として、Ｉｎ−Ｓｎ−Ｂｉ合金、Ｉｎ−Ｂｉ合金を使用する。よって、発熱体の動作時に容易に溶融する。   In the mounting method of the present invention, an In—Sn—Bi alloy or an In—Bi alloy is used as the low melting point metal having a melting point of 60 to 100 ° C. contained in the heat conductive bonding material. Therefore, it melts easily during operation of the heating element.

本発明に係る実装方法は、前記熱硬化性樹脂が、前記発熱体の動作時の温度より低い温度で硬化することを特徴とする。   The mounting method according to the present invention is characterized in that the thermosetting resin is cured at a temperature lower than a temperature during operation of the heating element.

本発明の実装方法では、熱硬化性樹脂の硬化温度が発熱体の動作時の温度より低い。よって、発熱体の動作時に、低融点金属を溶融させると共に熱硬化性樹脂の硬化を行う。よって、熱硬化性樹脂の硬化のための特別な加熱処理は不要であり、量産性に優れている。   In the mounting method of the present invention, the curing temperature of the thermosetting resin is lower than the temperature during operation of the heating element. Therefore, during operation of the heating element, the low melting point metal is melted and the thermosetting resin is cured. Therefore, a special heat treatment for curing the thermosetting resin is unnecessary, and the mass productivity is excellent.

本発明に係る実装方法は、前記熱硬化性樹脂が、マイクロカプセル型硬化剤を含有していることを特徴とする。   The mounting method according to the present invention is characterized in that the thermosetting resin contains a microcapsule type curing agent.

本発明の実装方法では、熱硬化性樹脂がマイクロカプセル型硬化剤を含有している。発熱体の動作時にカプセルが融けて中の硬化剤が流出し、熱硬化性樹脂が硬化する。よって、常温で反応する硬化剤も使用可能であり、その使用範囲が広くなる。   In the mounting method of the present invention, the thermosetting resin contains a microcapsule type curing agent. During operation of the heating element, the capsule melts and the curing agent therein flows out, and the thermosetting resin is cured. Therefore, a curing agent that reacts at room temperature can be used, and the range of use is widened.

本発明の実装方法では、発熱体の動作時の温度より融点が低い低融点金属を少なくとも含む熱伝導性フィラーを熱硬化性樹脂中に分散させてなる熱伝導接合材を、発熱体、放熱体の一方または両方に塗布し、この塗布した熱伝導接合材を介在させて発熱体と放熱体とを位置合わせし、発熱体を動作させてその動作時の熱によって低融点金属を溶融させるようにしたので、実装のための特別な加熱処理が不要となって量産性に優れており、しかも、低熱抵抗化を実現することができる。   In the mounting method of the present invention, a heat conductive bonding material in which a heat conductive filler containing at least a low melting point metal having a melting point lower than the temperature at which the heat generating element operates is dispersed in a thermosetting resin. The heating element and the radiator are aligned by interposing the applied heat conductive bonding material, and the heating element is operated so that the low melting point metal is melted by the heat during the operation. As a result, special heat treatment for mounting is not required, which is excellent in mass productivity, and low thermal resistance can be realized.

以下、本発明をその実施の形態を示す図面を参照して具体的に説明する。図１は、本発明に係る実装方法の工程の一例を示す図である。   Hereinafter, the present invention will be described in detail with reference to the drawings showing embodiments thereof. FIG. 1 is a diagram showing an example of the steps of the mounting method according to the present invention.

まず、発熱体であるシリコンチップ（半導体素子）１の一面（上面）に、熱伝導接合材２を塗布する（図１（ａ））。シリコンチップ１の他面（下面）には、複数のバンプ１１が形成され、各バンプ１１は、回路基板３の各電極３１と接続されている。また、シリコンチップ１と回路基板３との間は封止樹脂３２により封止されている。   First, the heat conductive bonding material 2 is applied to one surface (upper surface) of a silicon chip (semiconductor element) 1 that is a heating element (FIG. 1A). A plurality of bumps 11 are formed on the other surface (lower surface) of the silicon chip 1, and each bump 11 is connected to each electrode 31 of the circuit board 3. The space between the silicon chip 1 and the circuit board 3 is sealed with a sealing resin 32.

熱伝導接合材２は、低融点金属からなる第１のフィラー２１と、熱伝導性に優れる第２のフィラー２２と、ベース樹脂としての熱硬化性樹脂２３とから構成されている。熱伝導接合材２におけるフィラー（第１のフィラー２１及び第２のフィラー２２）の充填量は、良好な熱伝導性を得るために５０体積％以上であることが好ましい。   The heat conductive bonding material 2 is composed of a first filler 21 made of a low melting point metal, a second filler 22 having excellent heat conductivity, and a thermosetting resin 23 as a base resin. The filling amount of the filler (the first filler 21 and the second filler 22) in the heat conductive bonding material 2 is preferably 50% by volume or more in order to obtain good heat conductivity.

第１のフィラー２１は、シリコンチップ１の動作時の発熱温度より低い融点（約６０〜１００℃）を有する金属フィラーであり、具体的には、例えばＩｎ−Ｓｎ−Ｂｉ合金、Ｉｎ−Ｂｉ合金などからなる金属フィラーを使用できる。   The first filler 21 is a metal filler having a melting point (about 60 to 100 ° C.) lower than the heat generation temperature during operation of the silicon chip 1. Specifically, for example, an In—Sn—Bi alloy or an In—Bi alloy is used. The metal filler which consists of etc. can be used.

第２のフィラー２２は、融点が３００℃以上で熱伝導性に優れた金属フィラー、無機フィラーを使用する。具体的には、第２のフィラー２２として、銅、銀、金、アルミニウムなどの金属フィラー、アルミナ、シリカ、窒化アルミニウム、窒化ホウ素、酸化亜鉛などのの無機フィラーを使用できる。また、これらの金属フィラーまたは無機フィラーの表面を金属被覆したフィラーも使用できる。この際、被覆する金属としては、Ｉｎ−Ｓｎ−Ｂｉ合金、Ｉｎ−Ｂｉ合金などを使用できる。このような構成であれば、第１のフィラー２１が溶融した際に第１のフィラー２１との濡れ性が良い。   As the second filler 22, a metal filler or an inorganic filler having a melting point of 300 ° C. or higher and excellent thermal conductivity is used. Specifically, as the second filler 22, a metal filler such as copper, silver, gold, or aluminum, or an inorganic filler such as alumina, silica, aluminum nitride, boron nitride, or zinc oxide can be used. Moreover, the filler which coat | covered the surface of these metal fillers or an inorganic filler metal can also be used. At this time, as a metal to be coated, an In—Sn—Bi alloy, an In—Bi alloy, or the like can be used. With such a configuration, wettability with the first filler 21 is good when the first filler 21 is melted.

熱硬化性樹脂２３は、シリコンチップ１の動作時の発熱温度より低い温度（約６０〜１００℃）で硬化する樹脂であり、主剤としてのエポキシ樹脂とマイクロカプセル型の硬化剤とを含んでいる。   The thermosetting resin 23 is a resin that cures at a temperature (about 60 to 100 ° C.) lower than the heat generation temperature during the operation of the silicon chip 1, and includes an epoxy resin as a main agent and a microcapsule-type curing agent. .

次に、このような熱伝導接合材２を介在させて、シリコンチップ１と放熱体であるヒートシンク４との位置合わせを行った後（図１（ｂ））、両者を接合させる（図１（ｃ））。この際、加熱処理は施さない。   Next, after aligning the silicon chip 1 and the heat sink 4 as a heat dissipating member with the heat conductive bonding material 2 interposed therebetween (FIG. 1B), the two are bonded (FIG. 1 ( c)). At this time, heat treatment is not performed.

その後、接合後のシリコンチップ１の作動試験を行うためにシリコンチップ１を動作させる。このシリコンチップ１の動作時に、シリコンチップ１から発生する熱によって、第１のフィラー２１が溶融して第２のフィラー２２同士、第２のフィラー２２とシリコンチップ１及びヒートシンク４との間が金属接続されると共に、熱硬化性樹脂２３が硬化する（図１（ｄ））。   Thereafter, the silicon chip 1 is operated in order to perform an operation test of the bonded silicon chip 1. During the operation of the silicon chip 1, the first filler 21 is melted by heat generated from the silicon chip 1, and the second filler 22 and the space between the second filler 22 and the silicon chip 1 and the heat sink 4 are metal. While being connected, the thermosetting resin 23 is cured (FIG. 1D).

以上のように、本発明では、シリコンチップ１（発熱体）の動作時の熱を利用することによって、低熱抵抗化を実現するためには必須の金属接続を行う。また、この動作時の熱を利用してベース材である熱硬化性樹脂２３の硬化を行う。よって、低熱抵抗化を実現するために従来例では不可欠であった加熱処理を無くすことができて、実装処理を簡便に行えるため、量産性に優れている。また、併せて低熱抵抗化も実現できている。   As described above, in the present invention, metal connection essential for realizing a low thermal resistance is performed by using heat during operation of the silicon chip 1 (heating element). Further, the thermosetting resin 23, which is a base material, is cured using the heat during this operation. Therefore, the heat treatment that has been indispensable in the prior art for realizing a low thermal resistance can be eliminated, and the mounting process can be easily performed, which is excellent in mass productivity. In addition, a low thermal resistance can be realized.

なお、上記実施の形態では、発熱体（シリコンチップ１）に熱伝導接合材２を塗布することとしたが、これとは異なり、放熱体（ヒートシンク４）に熱伝導接合材２を塗布しても良く、また、発熱体（シリコンチップ１）及び放熱体（ヒートシンク４）の両方に熱伝導接合材２を塗布するようにしても良い。   In the above embodiment, the heat conductive bonding material 2 is applied to the heating element (silicon chip 1). However, unlike this, the heat conductive bonding material 2 is applied to the heat radiating body (heat sink 4). Alternatively, the heat conductive bonding material 2 may be applied to both the heat generating body (silicon chip 1) and the heat radiating body (heat sink 4).

以下、実施例に基づき本発明をより具体的に説明する。但し、本発明は、以下の実施例に限定されるものではない。   Hereinafter, based on an Example, this invention is demonstrated more concretely. However, the present invention is not limited to the following examples.

（実施例１）
以下の成分からなる熱伝導接合材２を作製した。
熱伝導性フィラー
・Ｉｎ−Ｓｎ−Ｂｉ合金（第１のフィラー２１）（融点：６０℃、平均粒径：１０μ ｍ）
・表面を銀メッキした銅（第２のフィラー２２）（平均粒径：３５μｍ）
樹脂（熱硬化性樹脂２３）
・主剤１：ビスフェノールＦ型エポキシ（ＥＸＡ−８３０ＬＶＰ，大日本インキ）
５０重量部
・主剤２：ナフタレン型エポキシ（ＨＰ−４０３２Ｄ，大日本インキ）
５０重量部
・硬化剤：酸無水物（ＫＲＭ−２９１−５，旭電化）
１００重量部
・促進剤：イミダゾール（ＨＸ−３９２１ ＨＰ，旭化成ケミカルズ）
１重量部 Example 1
A heat conductive bonding material 2 comprising the following components was produced.
Thermally conductive filler In-Sn-Bi alloy (first filler 21) (melting point: 60 ° C., average particle size: 10 μm)
・ Silver plated copper (second filler 22) (average particle size: 35 μm)
Resin (thermosetting resin 23)
・ Main agent 1: Bisphenol F type epoxy (EXA-830LVP, Dainippon Ink)
50 parts by weight-Main agent 2: Naphthalene type epoxy (HP-4032D, Dainippon Ink)
50 parts by weight ・ Curing agent: acid anhydride (KRM-291-5, Asahi Denka)
100 parts by weight-Accelerator: Imidazole (HX-3922 HP, Asahi Kasei Chemicals)
1 part by weight

上記成分を有する樹脂に対して、上記熱伝導性フィラーを５０体積％添加して熱伝導接合材２を作製した。なお、Ｉｎ−Ｓｎ−Ｂｉ合金（第１のフィラー２１）と銀メッキ銅（第２のフィラー２２）との配合比率は１：１とした。   The heat conductive bonding material 2 was produced by adding 50% by volume of the heat conductive filler to the resin having the above components. Note that the mixing ratio of the In—Sn—Bi alloy (first filler 21) and the silver-plated copper (second filler 22) was 1: 1.

作製した熱伝導接合材２を用いて、前述した実装工程の手順（図１（ａ）〜（ｄ）参照）に従って、シリコンチップ１及びヒートシンク４を実装させた。そして、得られた実装品（図１（ｄ）参照）の熱特性を測定した。   The silicon chip 1 and the heat sink 4 were mounted using the manufactured heat conductive bonding material 2 in accordance with the mounting process procedure described above (see FIGS. 1A to 1D). And the thermal characteristic of the obtained mounting product (refer FIG.1 (d)) was measured.

接合部の熱抵抗を測定した結果、０．０６℃・ｃｍ2 ／Ｗと極めて低い熱抵抗で接合できていることを確認できた。 As a result of measuring the thermal resistance of the bonded portion, it was confirmed that the bonding was possible with an extremely low thermal resistance of 0.06 ° C. · cm 2 / W.

（比較例１）
第１のフィラーとしてＩｎ−Ｓｎ−Ｂｉ合金（融点：６０℃）の代わりにＳｎ−Ｂｉ合金（融点：１３８℃）を用いた以外は実施例１と成分が同じである熱伝導接合材を作製し、その作製した熱伝導接合材を用いて、実施例１と同様にシリコンチップとヒートシンクとの実装を行い、その実装品の熱特性を測定した。 (Comparative Example 1)
A heat conductive bonding material having the same components as in Example 1 except that an Sn—Bi alloy (melting point: 138 ° C.) was used instead of the In—Sn—Bi alloy (melting point: 60 ° C.) as the first filler was produced. Then, using the heat conductive bonding material produced, the silicon chip and the heat sink were mounted in the same manner as in Example 1, and the thermal characteristics of the mounted product were measured.

その結果、接合部の熱抵抗は０．２℃・ｃｍ2 ／Ｗであり、実施例１と比較して高かった。これは、シリコンチップの動作時の温度が最大１００℃であるため、熱伝導接合材中のＳｎ−Ｂｉ合金（第１のフィラー）が溶融せずに、金属接続が得られなかったことに起因すると考えられる。 As a result, the thermal resistance of the joint was 0.2 ° C. · cm 2 / W, which was higher than that of Example 1. This is because the temperature at the time of operation of the silicon chip is 100 ° C. at the maximum, so that the Sn—Bi alloy (first filler) in the heat conductive bonding material did not melt and metal connection could not be obtained. I think that.

以上の本発明の実施の形態または実施例に関し、更に以下の付記を開示する。
（付記１） 自身の動作によって発熱する発熱体に、熱伝導接合材を介して放熱体を実装する方法において、前記発熱体及び／または前記放熱体に、前記発熱体の動作時の温度より融点が低い金属を少なくとも含む熱伝導性フィラーを熱硬化性樹脂中に分散させてなる前記熱伝導接合材を塗布し、前記発熱体と前記放熱体とを、前記熱伝導接合材を介在させて位置合わせし、前記発熱体を動作させて前記金属を溶融させることを特徴とする実装方法。
（付記２） 前記金属の融点は、６０〜１００℃であることを特徴とする付記１記載の実装方法。
（付記３） 前記金属は、Ｉｎ−Ｓｎ−Ｂｉ合金、及びＩｎ−Ｂｉ合金から選ばれる少なくとも１種類の合金であることを特徴とする付記１または２記載の実装方法。
（付記４） 前記熱伝導性フィラーは、銅、銀、金、若しくはアルミニウムの金属フィラー、アルミナ、シリカ、窒化アルミニウム、窒化ホウ素、若しくは酸化亜鉛の無機フィラー、または、これらのフィラー表面を金属被覆したフィラーを含むことを特徴とする付記１乃至３の何れかに記載の実装方法。
（付記５） 前記熱硬化性樹脂は、前記発熱体の動作時の温度より低い温度で硬化することを特徴とする付記１乃至４の何れかに記載の実装方法。
（付記６） 前記熱硬化性樹脂は、マイクロカプセル型硬化剤を含有していることを特徴とする付記１乃至５の何れかに記載の実装方法。
（付記７） 前記熱硬化性樹脂の硬化温度は、６０〜１００℃であることを特徴とする付記１乃至６の何れかに記載の実装方法。
（付記８） 前記熱伝導接合材における前記熱伝導性フィラーの割合が５０体積％以上であることを特徴とする付記１乃至７の何れかに記載の実装方法。 The following supplementary notes are further disclosed with respect to the above-described embodiments or examples of the present invention.
(Supplementary Note 1) In a method of mounting a heat dissipation body on a heating element that generates heat by its own operation via a heat conductive bonding material, the melting point of the heating element and / or the heat dissipation element is higher than the temperature during operation of the heating element. The heat conductive bonding material formed by dispersing a heat conductive filler containing at least a low metal in a thermosetting resin is applied, and the heating element and the heat dissipation body are positioned with the heat conductive bonding material interposed therebetween. A mounting method comprising: combining and melting the metal by operating the heating element.
(Additional remark 2) The melting point of the said metal is 60-100 degreeC, The mounting method of Additional remark 1 characterized by the above-mentioned.
(Supplementary note 3) The mounting method according to Supplementary note 1 or 2, wherein the metal is at least one kind of alloy selected from an In-Sn-Bi alloy and an In-Bi alloy.
(Supplementary Note 4) The thermally conductive filler is a metal filler of copper, silver, gold, or aluminum, an inorganic filler of alumina, silica, aluminum nitride, boron nitride, or zinc oxide, or the surface of these fillers is metal-coated. 4. The mounting method according to any one of appendices 1 to 3, further comprising a filler.
(Additional remark 5) The said thermosetting resin hardens | cures at temperature lower than the temperature at the time of operation | movement of the said heat generating body, The mounting method in any one of Additional remark 1 thru | or 4 characterized by the above-mentioned.
(Additional remark 6) The said thermosetting resin contains the microcapsule type hardening | curing agent, The mounting method in any one of Additional remark 1 thru | or 5 characterized by the above-mentioned.
(Additional remark 7) The mounting temperature in any one of additional remark 1 thru | or 6 characterized by the curing temperature of the said thermosetting resin being 60-100 degreeC.
(Additional remark 8) The mounting method in any one of additional remark 1 thru | or 7 characterized by the ratio of the said heat conductive filler in the said heat conductive joining material being 50 volume% or more.

本発明に係る実装方法の工程の一例を示す図である。It is a figure which shows an example of the process of the mounting method which concerns on this invention.

符号の説明Explanation of symbols

１ シリコンチップ（発熱体）
２ 熱伝導接合材
４ ヒートシンク（放熱体）
２１ 第１のフィラー（金属）
２２ 第２のフィラー
２３ 熱硬化性樹脂

1 Silicon chip (heating element)
2 Thermal conductive bonding material 4 Heat sink (heat radiator)
21 First filler (metal)
22 Second filler 23 Thermosetting resin

Claims (5)

自身の動作によって発熱する発熱体に、熱伝導接合材を介して放熱体を実装する方法において、
前記発熱体及び／または前記放熱体に、前記発熱体の動作時の温度より融点が低い金属を少なくとも含む熱伝導性フィラーを熱硬化性樹脂中に分散させてなる前記熱伝導接合材を塗布し、
前記発熱体と前記放熱体とを、前記熱伝導接合材を介在させて位置合わせし、
前記発熱体を動作させて前記金属を溶融させることを特徴とする実装方法。 In a method of mounting a heat sink on a heating element that generates heat by its own operation via a heat conductive bonding material,
The heat conductive bonding material formed by dispersing a heat conductive filler containing at least a metal having a melting point lower than a temperature during operation of the heat generator in a thermosetting resin is applied to the heat generator and / or the heat radiator. ,
The heating element and the radiator are aligned with the heat conductive bonding material interposed therebetween,
A mounting method comprising operating the heating element to melt the metal. 前記金属の融点は、６０〜１００℃であることを特徴とする請求項１記載の実装方法。   The mounting method according to claim 1, wherein the melting point of the metal is 60 to 100 ° C. 前記金属は、Ｉｎ−Ｓｎ−Ｂｉ合金、及びＩｎ−Ｂｉ合金から選ばれる少なくとも１種類の合金であることを特徴とする請求項１または２記載の実装方法。   The mounting method according to claim 1, wherein the metal is at least one alloy selected from an In—Sn—Bi alloy and an In—Bi alloy. 前記熱硬化性樹脂は、前記発熱体の動作時の温度より低い温度で硬化することを特徴とする請求項１乃至３の何れかに記載の実装方法。   The mounting method according to claim 1, wherein the thermosetting resin is cured at a temperature lower than a temperature during operation of the heating element. 前記熱硬化性樹脂は、マイクロカプセル型硬化剤を含有していることを特徴とする請求項１乃至４の何れかに記載の実装方法。
The mounting method according to claim 1, wherein the thermosetting resin contains a microcapsule-type curing agent.
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