JP2007171174A - Thermal type infrared sensing device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermal type infrared sensing device capable of achieving compactness and low costs and provide its manufacturing method. <P>SOLUTION: The thermal type infrared sensing device includes both a thermal type infrared sensing element 1 which is formed through the use of a first wafer (silicon wafer) and in which an infrared sensing part 13 thermally insulated from its surroundings on the side of one surface and a package 2 sealed in such a way as to surround the infrared sensing part 13 on the side of the one surface of the thermal type infrared sensing element 1. The package 2 is formed through the use of a second wafer (silicon wafer). Through hole wirings 15a and 15c electrically connected to the infrared sensing part 13 are formed in the thermal type infrared sensing element 1. The outside dimensions of the thermal type infrared sensing element 1 and the package 2 are identical. A semiconductor lens part 22 made of part of the second wafer is integrally formed in the package 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a thermal infrared detector and a method for manufacturing the same.

  2. Description of the Related Art Conventionally, in the field of light receiving devices and the like, a method for manufacturing a microlens mold using a conductive substrate and a method for manufacturing a microlens using the microlens mold have been proposed (see Patent Document 1). . In Patent Document 1, a synthetic resin lens is exemplified as a microlens.

  In the method for manufacturing a microlens mold disclosed in Patent Document 1, for example, a silicon nitride film is deposited on one surface of a low-resistance p-type silicon substrate that is a conductive substrate, and then a photolithography technique and an etching technique are used. Then, a circular opening is formed at a predetermined portion of the silicon nitride film, and then a part of the one surface side of the p-type silicon substrate is made porous by anodizing using the silicon nitride film as a mask layer. Thus, a hemispherical porous silicon portion is formed. Thereafter, the silicon dioxide portion is formed by oxidizing the entire porous silicon portion, the mask layer is removed, and then the silicon dioxide portion is removed to form a desired convex lens on the one surface of the p-type silicon substrate. A recess corresponding to the shape is formed, and then a thermal oxide film is formed on each of the one surface side and the other surface side of the p-type silicon substrate. In the above-described anodizing treatment, the gap between the cathode disposed opposite to the one surface side of the p-type silicon substrate and the anode plate disposed in contact with the other surface of the semiconductor substrate in the electrolytic solution for anodization. The porous silicon part is formed by energizing the current.

  By the way, in the method for manufacturing a microlens mold disclosed in Patent Document 1, a p-type silicon substrate having a low resistance that is relatively close to the resistivity of a conductor is used. Since the formation of the porous silicon substrate isotropically proceeds as isotropic etching, the shape of the opening is made circular so that the p-type silicon substrate 90 has the above-mentioned shape as shown in FIG. The depth dimension a1 of the concave portion 91 formed on one surface and the radius a2 of the circular opening surface of the concave portion 91 are substantially equal, and as a result, a spherical lens can be manufactured as a microlens. In addition, Patent Document 1 also discloses that a cylindrical lens can be manufactured as a microlens by making the shape of the opening portion rectangular when manufacturing a microlens mold. Yes.

  However, in the method for manufacturing a microlens mold disclosed in Patent Document 1, only a microlens mold for forming a microlens composed of a convex lens having a uniform curvature radius of a convex curved surface can be manufactured. Therefore, an aspherical lens or a concave lens could not be formed as a microlens. In addition, in the method of manufacturing a microlens mold disclosed in Patent Document 1, the lens diameter (= 2 × a2) of the microlens that can be manufactured is limited by the thickness of the p-type silicon substrate 90, which is larger. In order to manufacture a microlens having a lens diameter, it is necessary to use a p-type silicon substrate 90 having a larger thickness, which increases the cost.

  In addition, it is conceivable to manufacture a plano-concave semiconductor lens by using the method for forming the concave portion 91 in the p-type silicon substrate 90 described in Patent Document 1, but the curvature radius of the concave curved surface is used as the semiconductor lens. However, only a plano-concave spherical lens or cylindrical lens can be formed, and an aspherical lens cannot be formed. Also, in such a method for manufacturing a semiconductor lens, bubbles generated during anodizing treatment are desorbed through the openings of the mask layer, so that bubbles gather around the openings and the rate of progress of porous formation As a result, there is a case where a concave curved surface having a desired radius of curvature cannot be formed.

Conventionally, an anode without providing a mask layer having a pattern designed in accordance with the mesa shape on one surface side of a semiconductor substrate having a high resistance (for example, a resistivity of about 10 ⁸ Ωcm) such as a semi-insulating GaAs substrate. As a method for forming a mesa shape using an oxidation technique, an anode (electrode) whose shape is designed in accordance with the mesa shape is brought into contact with the other surface side of the semiconductor substrate, and then the above-mentioned semiconductor substrate in the anode and the electrolytic solution. A method has been proposed in which an anodic oxidation process is performed in which an oxide film is formed by energizing a cathode disposed opposite to one surface, followed by an oxide film removal process in which the oxide film is removed by etching (Patent Document 2). reference).

  In the mesa shape forming method described in Patent Document 2, the in-plane distribution of the current density of the current flowing through the semiconductor substrate is determined by the shape of the anode and the thickness of the oxide film in the anodizing step. A mesa shape in which the slope is gentle and the side surface and the flat surface of the mesa are smoothly continuous can be formed. Therefore, it is conceivable to apply the technique described in Patent Document 2 to a method for manufacturing a semiconductor lens.

  Conventionally, as a thermal infrared detector, an infrared detector with a microlens as shown in FIG. 13 has been disclosed (see Patent Document 3).

  Here, the thermal infrared detection device having the configuration shown in FIG. 13 has a first semiconductor substrate 101 having an infrared detection unit (infrared detection unit) 102 formed on one surface side, and the infrared rays are focused on the infrared detection unit 102. The second semiconductor substrate 104 on which the microlens portion 105 is formed is bonded in a form in which a cavity 106 is formed between the microlens portion 105 and the infrared detection portion 102.

In the thermal infrared detector having the configuration shown in FIG. 13, the bonding pad 107 is formed on the one surface side of the first semiconductor substrate 101, and the infrared detector 102 and the bonding pad 107 are connected to the metal wiring 107a. And electrically connected via the diffusion layer wiring 107b.
JP 2000-263556 A Japanese Patent Laid-Open No. 55-13960 JP-A-9-113352

  However, in the thermal infrared detector having the configuration shown in FIG. 13, since the bonding pad 107 is formed on the one surface side of the first semiconductor substrate 101, it is difficult to reduce the size and cost. In the thermal infrared detector having the configuration shown in FIG. 13, a lens forming recess is formed on one surface side of a silicon wafer serving as a basis of the second semiconductor substrate 104 at the time of manufacture, and then an infrared for a microlens. Since the microlens portion 105 is formed by heating the transmissive material and filling the concave portion for lens formation, and then forming the recess 108 on the other surface side of the silicon wafer, the microlens portion 105 needs to be exposed. As a result, the cost of the second semiconductor substrate 104 is increased.

In addition, as described above, it is conceivable to form the aspherical lens having a large radius of curvature by applying the technique described in Patent Document 2 to the method for manufacturing a semiconductor lens. As the thickness of the film increases, the potential difference between the anode and the cathode increases. For example, when a GaAs substrate having a thickness of 400 μm and a resistivity of 10 ⁸ Ωcm is used as the semiconductor substrate, 1 mA / cm ^2. When the oxide film is formed with a constant current, the potential difference becomes as high as 400 V even if the thickness of the oxide film is about 0.6 μm. Therefore, the basic process consisting of the anodic oxidation process and the oxide film removal process is repeated. The manufacturing process is complicated, and it is difficult to manufacture a semiconductor lens having a desired lens shape.

  Further, in the technique described in Patent Document 2, since the anode used in the anodizing process is merely pressed against and brought into contact with the other surface of the high-resistance semiconductor substrate, the contact resistance between the semiconductor substrate and the anode is large. The contact between the semiconductor substrate and the anode becomes a Schottky contact, and there is a problem in the controllability and reproducibility of the in-plane distribution of the current density.

  The present invention has been made in view of the above reasons, and an object of the present invention is to provide a thermal infrared detector capable of being reduced in size and cost and a manufacturing method thereof.

  According to the first aspect of the present invention, there is provided a thermal-type infrared detection element formed with a first wafer and having an infrared detection portion formed on one surface side and thermally insulated from the surroundings, and the one-surface side of the thermal-type infrared detection element. And a package sealed with a thermal infrared detection element in a form surrounding the infrared detection unit, the package is formed using at least a second wafer, the material of the second wafer is a semiconductor material, and the thermal type A through-hole wiring electrically connected to the infrared detection unit is formed on one of the infrared detection element and the package, and the external size of the thermal infrared detection element and the package is the same. The semiconductor lens part which consists of a part is formed integrally.

  According to the present invention, the through-hole wiring electrically connected to the infrared detection unit is formed on one of the thermal infrared detection element and the package, and the external size of the thermal infrared detection element and the package is the same, Since the semiconductor lens portion made of a part of the second wafer is formed integrally with the package, it is possible to reduce the size and cost.

  According to a second aspect of the present invention, in the first aspect of the invention, the package is formed using the second wafer, and the infrared detection unit is thermally insulated from a surface of the package on the thermal infrared detection element side. A thermal insulation recess is formed, and the periphery of the thermal insulation recess in the package is joined to the periphery of the thermal infrared detection element.

  According to the present invention, the package can be formed using only the second wafer, and the cost can be reduced.

  According to a third aspect of the present invention, in the first aspect of the invention, the package is formed using the second wafer, and the semiconductor lens portion is integrally formed, and is separated from the one surface of the thermal infrared detection element. And a frame-like spacer formed by using a third wafer and interposed between the thermal-type infrared detecting element and the package lid.

  According to the present invention, by appropriately adjusting the thickness of the third wafer, the focus position of the semiconductor lens unit can be easily adjusted to the position of the infrared detection unit, and the thickness of the second wafer can be adjusted. Regardless of this, high sensitivity can be achieved.

  According to a fourth aspect of the present invention, in the first to third aspects of the present invention, the space surrounded by the thermal infrared detecting element and the package is a vacuum atmosphere.

  According to this invention, since the said infrared detection part is arrange | positioned in a vacuum atmosphere, high sensitivity can be achieved.

  According to a fifth aspect of the present invention, in the first to fourth aspects of the present invention, a multilayer interference filter that transmits infrared light in a desired wavelength region and reflects infrared light in an unnecessary wavelength region is formed on at least one surface of the semiconductor lens portion. It is characterized by being made.

  According to the present invention, it is possible to cut infrared rays in an unnecessary wavelength region, so that high sensitivity can be achieved.

  According to a sixth aspect of the present invention, in the first to fifth aspects of the invention, the package reflects the infrared rays that are incident on the light receiving surface of the thermal infrared detection element through the periphery of the semiconductor lens portion. A film is provided.

  According to this invention, infrared rays can be prevented from entering the light receiving surface of the thermal infrared detection element through the periphery of the semiconductor lens portion in the package, and noise can be reduced.

  According to a seventh aspect of the present invention, in the first to fifth aspects of the present invention, the package absorbs infrared rays that are intended to be incident on a light receiving surface of the thermal infrared detection element through a peripheral portion of the semiconductor lens portion. A portion is provided.

  According to this invention, infrared rays can be prevented from entering the light receiving surface of the thermal infrared detection element through the periphery of the semiconductor lens portion in the package, and noise can be reduced.

  According to an eighth aspect of the present invention, in the seventh aspect of the invention, the infrared absorbing portion is formed of a high-concentration impurity doping layer that is more highly doped than a peripheral portion of the semiconductor lens portion.

  According to this invention, since the infrared absorbing portion is thermally stable, for example, as a method for manufacturing a thermal infrared detector, a getter is disposed in a space surrounded by the thermal infrared detector and the package. In the case of adopting a manufacturing method in which heating for activating the getter is employed, it is possible to prevent the infrared absorption characteristics of the infrared absorbing portion from changing during heating for the activation.

  According to a ninth aspect of the present invention, in the first to eighth aspects of the invention, both the thermal infrared detecting element and the package are grounded.

  According to this invention, the electromagnetic shielding effect can be enhanced, and the influence of electromagnetic noise on the output signal of the infrared detection unit can be prevented.

  According to a tenth aspect of the present invention, in the first to ninth aspects of the invention, the thermal infrared detection element includes an amplifier circuit that is formed using the first wafer and amplifies an output signal of the infrared detection unit. A signal processing circuit made of an integrated circuit is formed on the one surface side.

  According to the present invention, the wiring length between the infrared detection unit and the amplifier circuit can be shortened, noise from the wiring connecting the two can be prevented, and light from the outside can be applied to the signal processing circuit. Since the incident can be prevented by the package, noise due to optical excitation of carriers in the signal processing circuit can be prevented, and high sensitivity can be achieved. Further, as compared with the case where the infrared detection unit and the signal processing circuit are separately packaged, there is an advantage that the thermal infrared detection device including the signal processing circuit can be downsized.

  The invention of claim 11 is the method for manufacturing the thermal infrared detection device according to claim 2, wherein a first wafer having a plurality of thermal infrared detection elements formed thereon and a second wafer having a plurality of packages formed thereon. A wafer level package structure is formed by bonding at the wafer level, and the wafer level package structure is divided into the outer size of the thermal infrared detection element.

  According to the present invention, a small-sized and low-cost thermal infrared detector can be provided.

  A twelfth aspect of the invention is a method for manufacturing a thermal infrared detection device according to the third aspect, wherein a first wafer in which a plurality of thermal infrared detection elements are formed and a second wafer in which a plurality of package lids are formed. A wafer level package structure is formed by bonding either one and a third wafer on which a plurality of spacers are formed at the wafer level, and then bonding the other and the third wafer at the wafer level to form a wafer level package structure. The body is divided into the outer size of the thermal infrared detection element.

  According to the present invention, a small-sized and low-cost thermal infrared detector can be provided.

  According to a thirteenth aspect of the present invention, in the invention of the eleventh or twelfth aspect, in forming the semiconductor lens portion, an anode having a pattern design according to a desired lens shape is formed on the one surface side of the second wafer. An anode forming step to be performed, and a porous material to be a removal site on the other surface side of the second wafer by energizing between the anode and the cathode disposed opposite to the other surface side of the second wafer in the electrolytic solution. An anodic oxidation step for forming a mass portion and a porous portion removal step for removing the porous portion, and in the anode formation step, the contact between the anode and the second wafer is an ohmic contact. The anode is formed, and in the anodic oxidation step, a solution for etching away oxides of constituent elements of the second wafer is used as the electrolytic solution.

  According to this invention, since the in-plane distribution of the current density of the current flowing in the second wafer in the anodizing step is determined by the anode pattern formed in the anodizing step, the porous portion formed in the anodizing step In-plane distribution of the thickness of the anode becomes easy, and in the anode formation step, the anode is formed so that the contact between the anode and the second wafer is ohmic contact. Since no Schottky barrier is generated between the wafer and the wafer, the current flowing during energization in the anodic oxidation process is blocked by the Schottky barrier, the desired current value cannot be obtained, or the contact resistance is caused by the instability of the Schottky barrier. In the anodic oxidation process, the oxide of the constituent element of the second wafer is removed by etching as an electrolytic solution in the anodizing process. Therefore, it is possible to easily form a porous portion having a desired thickness distribution whose thickness is continuously changed in one anodic oxidation step, and to remove the porous portion from the porous portion removing step. Since the semiconductor lens portion having a desired lens shape is formed by removing at step S, it is possible to easily form the semiconductor lens portion having an arbitrary shape.

  According to a fourteenth aspect of the present invention, there is provided a thermal-type infrared detection element formed using a first wafer and having an infrared detection portion formed on one surface side and thermally insulated from the surroundings, and the one-surface side of the thermal-type infrared detection element. And a package sealed so as to surround the infrared detection portion, the package is formed using at least a second wafer, the material of the second wafer is a semiconductor material, and the thermal infrared detection element, the package, Of the thermal infrared detecting device in which the semiconductor lens part formed of a part of the second wafer is integrally formed in the package, and the semiconductor lens part is formed in a desired shape. An anode forming step of forming an anode having a pattern designed according to the lens shape on the one surface side of the second wafer, a cathode disposed opposite to the other surface side of the second wafer in the electrolyte, and the anode A anodic oxidation step of forming a porous portion to be a removal site on the other surface side of the second wafer by energizing in between, and a porous portion removing step of removing the porous portion, The anode is formed so that the contact between the anode and the second wafer becomes ohmic contact, and in the anodic oxidation step, a solution for removing the oxide of the constituent element of the second wafer by etching is used as the electrolytic solution. It is characterized by that.

  According to this invention, since the in-plane distribution of the current density of the current flowing in the second wafer in the anodizing step is determined by the anode pattern formed in the anodizing step, the porous portion formed in the anodizing step In-plane distribution of the thickness becomes easy, and in the anode forming step, the anode is formed so that the contact between the anode and the second wafer becomes ohmic contact. Since the Schottky barrier does not occur between the two, the current flowing during energization in the anodizing process is blocked by the Schottky barrier, the desired current value cannot be obtained, or the surface of the contact resistance due to the instability of the Schottky barrier In addition, it is possible to prevent the occurrence of defects that cause internal variation, and in the anodizing process, a solution that etches away oxides of constituent elements of the second wafer is used as the electrolytic solution. Therefore, it is possible to easily form a porous part whose thickness has been continuously changed with a desired thickness distribution in one anodic oxidation process, and the porous part is removed in the porous part removing process. As a result, a semiconductor lens portion having a desired lens shape is formed, so that it is possible to easily form a semiconductor lens portion having an arbitrary shape, and it is possible to provide a small-sized and low-cost thermal infrared detector. Become.

  In the invention of claim 1, there is an effect that it is possible to reduce the size and cost.

  The inventions of claims 11, 12, and 14 are advantageous in that it is possible to provide a small-sized and low-cost thermal infrared detector.

(Embodiment 1)
As shown in FIG. 1, the thermal infrared detection device of the present embodiment is a thermal infrared detection in which an infrared detection unit 13 formed using a first silicon wafer and thermally insulated from the surroundings is formed on one surface side. Sealed so as to surround the infrared detecting section 13 on the one surface side of the thermal infrared detecting element 1 formed using the element 1 (see FIG. 2) and the second silicon wafer 20 (see FIG. 3A). And the thermal infrared detecting element 1 and the package 2 have the same outer size, and the semiconductor lens portion 22 made of a part of the second silicon wafer 20 is integrally formed on the package 2. Yes. In the present embodiment, the first silicon wafer constitutes the first wafer, and the second silicon wafer 20 constitutes the second wafer. That is, the material of the second wafer is a semiconductor material. Moreover, the external shape of the thermal infrared detecting element 1 and the package 2 is rectangular.

The infrared detector 13 is a thermistor type sensing element whose electric resistance value changes according to temperature, and includes a lower electrode 13a made of a chromium film and a resistor layer 13b made of an amorphous silicon film formed on the lower electrode 13a. And an upper electrode 13c made of a chromium film formed on the resistor layer 13b. In the thermal infrared detection element 1 according to this embodiment, the infrared absorption layer 17 is laminated on the infrared detection unit 13. Here, the thermal-type infrared detection element 1 assumes an infrared ray having a wavelength band of 8 μm to 13 μm emitted from a human body as an infrared ray to be detected, and employs SiON as a material of the infrared absorption layer 17. The material of the infrared absorption layer 17 is not limited to SiON, and for example, Si ₃ N ₄ , SiO ₂ , gold black, or the like may be employed. The infrared detector 13 is not limited to a thermistor type sensing element. For example, a thermopile type sensing element, a resistance bolometer type sensing element, a pyroelectric type sensing element, or the like converts a temperature change into an electric signal change. Anything that can be converted is acceptable. Further, the thermal infrared detection element 1 is not limited to the one in which the infrared detection unit 13 is configured by one sensing element, and may be an array type in which a plurality of sensing elements are arranged in an array, or different types. A composite type including a plurality of sensing elements may be used.

  By the way, the thermal infrared detecting element 1 is formed inside the peripheral portion of the recess 10a formed on one surface (upper surface in FIG. 1) of the support substrate 10 formed using the first silicon wafer as described above. An infrared detector 13 is formed on the thin film base 11a. The base portion 11a is formed in a rectangular shape on the outer periphery, and the support substrate 10 is extended from each of the four corners of the base portion 11a through four beam portions 11b that are continuously and integrally extended along the diagonal direction of the base portion 11a. Is supported by the peripheral portion of the recess 10a. Here, the support substrate 10 has an insulating layer 11 formed on one surface, and each of the beam portions 11b described above is formed continuously and integrally with the insulating layer 11 of the support substrate 10. In short, each beam portion 11b is arranged inside the peripheral portion of the recess 10a in the support substrate 10, and one end portion is continuously connected to the base portion 11a and the other end portion is continuously integrated to the peripheral portion of the recess 10a. It is connected. The insulating layer 11 is formed of a laminated film of a silicon oxide film and a silicon nitride film, but is not limited to the laminated film, and may be formed of, for example, so-called low stress silicon nitride. Further, the distance between the inner bottom surface of the recess 10a and the base portion 11a may be set to, for example, about several μm in consideration of heat insulation.

  In addition, the infrared detection unit 13 of the thermal infrared detection element 1 is formed in the thickness direction of the metal wirings 14a and 14c and the support substrate 10 in which the lower electrode 13a and the upper electrode 13c are extended along different beam portions 11b and 11b. It is electrically connected to the external connection electrodes 16a and 16c formed on the other surface (the lower surface in FIG. 1) of the support substrate 10 through the through-hole wirings 15a and 15c (see FIG. 1). The illustration of the insulating film interposed between the through-hole wirings 15a and 15c and the external connection electrodes 16a and 16c and the support substrate 10 is omitted). Here, the thermal infrared detection element 1 in the present embodiment has a microbridge structure using the above-described beam portion 11b, and in order to achieve high sensitivity while achieving downsizing, each beam portion 11b is provided. By extending in the direction along the diagonal line of the base part 11a, the length dimension of each beam part 11b is lengthened, and the line width of the metal wirings 14a and 14c formed on the beam parts 11b and 11b is made to be the beam parts 11b and 11b. The heat transfer through the metal wirings 14a and 14c can be suppressed by making it smaller than the width dimension. In the present embodiment, the infrared detection unit 13 is thermally insulated from the surroundings using the above-described microbridge structure, but the structure for thermally insulating the infrared detection unit 13 from the surroundings is not limited to the microbridge structure. Alternatively, a heat insulating structure formed of a diaphragm-like film may be used. FIG. 1 shows an example in which the thermal infrared detector of the present embodiment is mounted on a circuit board 5 made of a printed circuit board. The external connection electrodes 16a and 16c are connected to the circuit board via bumps 6a and 6c. It is joined to 5 different conductor patterns (not shown).

  Further, in the package 2 described above, a thermal insulation recess 21 for thermally insulating the infrared detection unit 13 is formed on the surface of the thermal infrared detection element 1 side. Here, the depth dimension of the thermal insulation recess 21 is set so that the distance between the inner bottom surface of the thermal insulation recess 21 and the infrared absorption layer 17 is, for example, about several μm in consideration of heat insulation. is there.

Further, in the thermal infrared detection device of the present embodiment, the sealing bonding metal layer 18 is formed over the entire circumference of the support substrate 10 of the thermal infrared detection element 1, and the thermal type in the package 2. The sealing bonding metal layer 28 is formed over the entire circumference of the peripheral portion on the infrared detection element 1 side, and the sealing bonding metal layers 18 and 28 are bonded to each other in a vacuum (that is, the package 2 The peripheral portion of the thermal insulation recess 21 and the peripheral portion of the thermal infrared detection element 1 are joined together), the space surrounded by the thermal infrared detection element 1 and the package 2 and the internal space of the recess 10a. It has a vacuum atmosphere. Here, if the bonding metal layers 18 and 28 for sealing are directly bonded to each other, the manufacturing process is simplified. However, bonding reliability can be further improved by bonding using solder. When directly joining the bonding metal layers 18 and 28 for sealing, the same metal material (for example, Au, Al, Cu, etc.) is adopted as the material of the bonding metal layers 18 and 28 for sealing, What is necessary is just to apply a load appropriately by a room temperature bonding method and to perform direct bonding. Further, without providing the sealing bonding metal layers 18 and 28, the support substrate 10 and the package 2 are any one set selected from the group of Si—Si, Si—SiO ₂ , and SiO ₂ —SiO ₂ . You may make it join directly by the normal temperature joining method in combination.

  Incidentally, the package 2 is integrally formed with a semiconductor lens portion (silicon lens portion) 22 formed of a part of the second silicon wafer 20 described above. The semiconductor lens portion 22 in the present embodiment constitutes a plano-convex aspheric lens, the surface on the infrared detection unit 13 side is planar, and the surface opposite to the infrared detection unit 13 is convex. Is formed.

  Hereinafter, a method for forming the semiconductor lens portion 22 will be described with reference to FIGS.

First, after performing a cleaning process for cleaning the second silicon wafer 20 shown in FIG. 3A, a marking process for providing a mark on one surface of the second silicon wafer 20 (the lower surface in FIG. 3A), A metal film having a predetermined film thickness (for example, 1 μm) serving as the basis of the anode 32 (see FIG. 3C) used in the anodic oxidation process on the one surface side of the second silicon wafer 20 (in this embodiment, Al The structure shown in FIG. 3B is obtained by performing a conductive layer forming step for forming a conductive layer 31 made of a film. Here, in the conductive layer forming step, the conductive layer 31 is formed on the one surface of the second silicon wafer 20 by, for example, sputtering, and then the conductive layer 31 in an N ₂ gas and H ₂ gas atmosphere. By performing this sintering (heat treatment), the conductive layer 31 in which the contact with the second silicon wafer 20 forms an ohmic contact is formed. The method for forming the conductive layer 31 is not limited to the sputtering method, and other known thin film forming methods such as a vapor deposition method may be employed. Further, the material of the conductive layer 31 is not limited to Al, and any material that can make ohmic contact with the second semiconductor wafer 20 may be used. For example, Al—Si containing Al as a main component is used. May be.

  After the conductive layer forming step, a patterning step for patterning the conductive layer 31 so as to provide a circular opening 33 in the conductive layer 31 is performed, thereby obtaining the structure shown in FIG. Here, in the patterning step, a resist layer (not shown) in which a portion corresponding to the opening 33 is opened on the one surface side of the second silicon wafer 20 by using a photolithography technique. Thereafter, an unnecessary portion of the conductive layer 31 is removed by etching using, for example, a wet etching technique or a dry etching technique by using the resist layer as a mask, and an opening portion 33 is provided to form an anode 32 composed of the remaining portion of the conductive layer 31. Thereafter, the resist layer is removed. If the conductive layer 31 is an Al film, when unnecessary portions of the conductive layer 31 are removed by wet etching technique, for example, a phosphoric acid-based etchant may be used, and the unnecessary portions of the conductive layer 31 are dried. In the case of etching removal by an etching technique, for example, a reactive ion etching apparatus or the like may be used. In the present embodiment, the anode 32 having a pattern designed according to a desired lens shape is formed on the one surface side of the second silicon wafer 20 as the second wafer in the conductive layer forming step and the patterning step. The anode forming step to be formed is configured.

  After the patterning step, an electric current is passed between the anode 32 and the anode 32 disposed opposite to the other surface side of the second silicon wafer 20 (the upper surface side in FIG. 3A) in the electrolytic solution for anodization. The structure shown in FIG. 3D is obtained by performing an anodic oxidation process (anodic oxidation process) for forming a porous portion 34 as a removal site on the other surface side of the second silicon wafer 20. In the present embodiment, since the second silicon wafer 20 has a p-type conductivity, it is necessary to irradiate the other surface side of the second silicon wafer 20 with light in the anodizing step. However, when the second silicon wafer 20 is n-type, it is necessary to irradiate light. In addition, as the electrolytic solution, a mixed solution in which a 55 wt% aqueous solution of hydrogen fluoride and ethanol are mixed at a ratio of 1: 1 is used. The concentration of the aqueous solution of hydrogen fluoride and the mixing ratio of the aqueous solution of hydrogen fluoride and ethanol are as follows. There is no particular limitation. Also, the liquid mixed with the aqueous hydrogen fluoride solution is not limited to ethanol, and is not particularly limited as long as it is a liquid that can remove bubbles generated by an anodizing reaction, such as alcohol such as methanol, propanol, and isopropanol (IPA). .

By the way, when a part of the second silicon wafer 20 is made porous in the anodic oxidation step, it is considered that the following reaction occurs when the hole is h ⁺ and the electron is e ⁻ .
Si + 2HF + (2-n) h ⁺ → SiF ₂ + 2H ⁺ + ne ⁻
SiF ₂ + 2HF → SiF ₄ + H ₂
SiF ₄ + 2HF → SiH ₂ F ₆
That is, in the anodic oxidation of the second silicon wafer 20, it is known that porosity or electropolishing occurs due to the balance between the supply amount of F ions and the supply amount of holes h ⁺ . When the amount of supply is larger than the supply amount of holes, the formation of porosity occurs, and when the supply amount of holes h ⁺ is larger than the supply amount of F ions, electrolytic polishing occurs. Therefore, when the p-type conductivity type is used as the second silicon wafer 20 as in the present embodiment, the rate of porosity formation by anodic oxidation is determined by the supply amount of holes h ⁺ . The speed of the porous formation is determined by the current density of the current flowing through the second silicon wafer 20, and the thickness of the porous portion 34 is determined. Here, on the other surface side of the second silicon wafer 20, the in-plane distribution of the current density is such that the current density gradually increases as the distance from the center line of the opening 33 along the thickness direction of the anode 32 increases. Thus, the porous portion 34 formed on the other surface side of the second silicon wafer 20 gradually becomes thinner as it approaches the center line of the opening portion 33 of the anode 32.

  After the above-described anodic oxidation step is completed, a porous portion removing step for removing the porous portion 34 is performed. Here, if an alkaline solution (for example, KOH, TMAH, NaOH, or the like) or an HF solution is used as an etching solution for removing the porous portion 34, in the porous portion removing step for removing the porous portion 34, aluminum is used. The formed anode 32 can also be removed by etching, and the semiconductor lens portion 22 having the structure shown in FIG. 3E can be formed. Of course, the porous portion removing step for removing the porous portion 34 and the anode removing step for removing the anode 32 may be performed separately.

  According to the method for forming the semiconductor lens portion 22 described above, the in-plane distribution of the current density of the current flowing through the second silicon wafer 20 in the anodizing step is determined by the pattern of the anode 32 formed in the anode forming step. The in-plane distribution of the thickness of the porous portion 34 formed in the anodizing process can be controlled, and in the anode forming process, the contact between the anode 32 and the second semiconductor wafer 30 is an ohmic contact. Since the anode 32 is formed, no Schottky barrier is generated between the anode 32 and the second semiconductor wafer 30, so that the current that flows during energization in the anodic oxidation process is interrupted by the Schottky barrier or the desired current value is It is possible to prevent the occurrence of defects such as non-obtainable or Schottky barrier instability due to in-plane variation in contact resistance. Since the solution for removing the oxide of the constituent element of the second semiconductor wafer 30 by etching is used as the electrolytic solution, the porous portion 34 whose thickness is continuously changed with a desired thickness distribution is used as one anode. Since the semiconductor lens portion 22 having a desired lens shape is formed by removing the porous portion 34 in the porous portion removing step, the semiconductor lens 22 having a desired shape can be formed easily by the oxidation step. The portion 22 can be easily formed. In the present embodiment, the lens diameter of the semiconductor lens portion 22 is set to about several millimeters, so that the size and cost can be reduced compared to a silicon lens obtained by machining, but an image like a thermal image sensor. The semiconductor lens portion 22 having a relatively large lens diameter (sub-mm or more) compared to the microlens used in the sensor can also be formed. Here, the lens diameter of the semiconductor lens portion 22 is not particularly limited, and the radius of the circular aperture 33 described above may be set as appropriate based on the design value of the lens diameter of the semiconductor lens portion 22.

  By the way, in the method for forming the semiconductor lens portion 22 described above, the lens shape (in the present embodiment, a plano-convex aspherical lens) is determined by the in-plane distribution of the current density of the current flowing through the second silicon wafer 20 in the anodizing step. The radius of curvature and lens diameter of the aspherical surface of the second silicon wafer 20 are determined, so that the resistivity and thickness of the second silicon wafer 20, the electric resistance value of the electrolyte used in the anodizing process, and the second silicon wafer 20 and the cathode The distance between the electrodes, the planar shape of the cathode (the shape in a plane parallel to the second silicon wafer 20 in a state of being opposed to the second silicon wafer 20), the inner diameter of the circular aperture 33 in the anode 32, etc. By appropriately setting the lens shape, the lens shape can be controlled. Here, the electrical resistance value of the electrolytic solution can be adjusted, for example, by changing the concentration of the aqueous hydrogen fluoride solution or the mixing ratio of the aqueous hydrogen fluoride solution and ethanol. By appropriately setting conditions other than the shape of the anode 32 (for example, the electric resistance value of the electrolytic solution), the shape of the semiconductor lens portion 22 can be more easily controlled. In the method for forming the semiconductor lens portion 22 described above, the anode 32 provided with the circular aperture 33 is formed in the anode formation step. However, the aperture 33 is not circular but rectangular. If the shape is a cylindrical shape, it is also possible to form a cylindrical lens as the semiconductor lens portion 22. If the anode 32 has a circular planar shape, a plano-concave aspheric lens can be formed as the semiconductor lens portion 22. The method for forming the semiconductor lens portion 22 described above can also be applied to a method for manufacturing a thermal infrared detector that does not include the above-described through-hole wirings 15a and 15c.

  By the way, in the thermal infrared detector of this embodiment, as described above, the thermal infrared detector 1 is formed with the through-hole wirings 15a and 15c that are electrically connected to the infrared detector 13 to detect the thermal infrared detector. Since the outer dimensions of the element 1 and the package 2 are the same, and the semiconductor lens portion 22 formed of a part of the second silicon wafer 20 is integrally formed in the package 2, it is compared with the conventional configuration shown in FIG. Thus, downsizing and cost reduction are possible. As with conventional can packages, it is composed of many components such as stems, caps, filters, lenses, infrared detectors, etc., and is more sensitive than thermal infrared detectors that have become larger in size. However, it can be downsized.

  In the thermal infrared detector of this embodiment, the package 2 is formed using the second silicon wafer 20 described above, and the infrared detector 13 is heated on the surface of the package 2 on the thermal infrared detector 1 side. A heat insulating recess 21 for insulation is formed, and the peripheral portion of the heat insulating recess 21 in the package 2 and the peripheral portion of the thermal infrared detection element 1 are joined, so that only the second silicon wafer 20 is attached to the package 2. As a result, the thermal infrared detection device can be formed using two wafers, and the cost can be reduced.

  Moreover, in the thermal type infrared detection apparatus of this embodiment, since the infrared detection part 13 is arrange | positioned in a vacuum atmosphere, high sensitivity can be achieved. Here, in the thermal infrared detector of this embodiment, since both the thermal infrared detector 1 and the package 2 are formed of silicon, each component when the space surrounded by both is evacuated is obtained. It is possible to significantly suppress the gas emission and eliminate the need for a getter or the like that is required in a conventional vacuum package.

  In manufacturing the thermal infrared detector of the present embodiment, a first silicon wafer having a plurality of thermal infrared detectors 1 formed thereon and a second silicon wafer 20 having a plurality of packages 2 formed at the wafer level. A wafer level package structure is formed by bonding, and the wafer level package structure is divided into the outer size of the thermal infrared detector 1 from the wafer level package structure, so that a small and low cost thermal infrared detector is provided. be able to.

(Embodiment 2)
The basic configuration of the thermal infrared detector of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 4, an unnecessary wavelength that transmits infrared light in a desired wavelength range on both surfaces of the semiconductor lens unit 22. The difference is that multilayer interference filters 23 and 24 that reflect the infrared rays in the region are formed. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

  Here, one multilayer interference filter 23 is formed over the entire surface of the package 2 on the side opposite to the thermal infrared detection element 1 (that is, a portion corresponding to the semiconductor lens portion 22 and its peripheral portion). On the other hand, the other multilayer interference filter 24 is formed only at a portion corresponding to the semiconductor lens portion 22 on the inner bottom surface of the thermal insulation recess 21 and corresponds to the semiconductor lens portion 22. An infrared reflection film 25 is formed in the peripheral part of the part. As a material of the infrared reflecting film 25, for example, Al or A-Si containing Al as a main component may be employed. In this case, the anode 32 (see FIG. 3 (d)) can be used as it is as the infrared reflecting film 25 without being removed.

  Thus, in the thermal infrared detector of the present embodiment, multilayer interference filters 23 and 24 that transmit infrared light in a desired wavelength region and reflect infrared light in an unnecessary wavelength region are formed on both surfaces of the semiconductor lens unit 22. Therefore, it is possible to cut infrared rays in an unnecessary wavelength range (removing noise caused by sunlight), and high sensitivity can be achieved. In addition, it is possible to prevent infrared rays from entering the light receiving surface of the thermal infrared detection element 1 through the peripheral portion of the semiconductor lens portion 22 in the package 2, and noise can be reduced.

  By the way, when mounting and using on the circuit board 5 similarly to Embodiment 1, after mounting on the circuit board 5, by apply | coating resin (for example, epoxy resin etc.) around the thermal type infrared detection apparatus, and hardening it. If the infrared intrusion prevention unit 7 is formed, it is possible to prevent the intrusion of infrared rays from the side surface of the thermal type infrared detecting device.

  In the present embodiment, the multilayer interference filters 23 and 24 are formed on both surfaces of the semiconductor lens portion 22, but it is sufficient that they are formed on at least one surface.

(Embodiment 3)
The basic configuration of the thermal infrared detector of this embodiment is substantially the same as that of the second embodiment. As shown in FIG. 5, the contact electrode 4 is provided on each side surface of the support substrate 10 and the package 2 in the thermal infrared detector 1. , 4 and the infrared intrusion prevention portion 7 is formed of a conductive material made of conductive paste or solder, thereby grounding the thermal infrared detecting element 1 and the package 2 to a ground pattern (not shown) of the circuit board 5. The only difference is that In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and description is abbreviate | omitted.

  Thus, in the infrared detection device of this embodiment, since both the thermal infrared detection element 1 and the package 2 are grounded, the electromagnetic shielding effect can be enhanced, and electromagnetic noise on the output signal of the infrared detection unit 13 can be improved. Can be prevented. In the present embodiment, the contact electrode 4 may be formed as necessary. For example, when an insulator is not interposed between the thermal infrared detection element 1 and the package 2 (for example, the support substrate 10 and the package 2). Are directly bonded by a combination of Si—Si or bonded via a solder portion), the contact electrode 4 may be provided on at least one of the support substrate 10 and the package 2. Of course, similar contact electrodes 4 may be provided in other embodiments.

Incidentally, in the package 2 described in the second and third embodiments, the infrared reflection film 25 is formed in the peripheral portion of the portion corresponding to the semiconductor lens portion 22, but instead of the infrared reflection film 25, the semiconductor lens portion is formed. An infrared absorbing portion that blocks infrared rays by absorbing infrared rays that are about to enter the thermal infrared detection element 1 through the peripheral portion of the 22 may be formed. Here, when the infrared absorbing portion is formed using, for example, a thin film forming technique, examples of the material of the infrared absorbing portion include SiO ₂ , Si ₃ N ₄ , SiON, ceramic (for example, Al ₂ O ₃ , AlN, Non-metal (insulating material) such as SiC), metals with low reflectivity such as NiCr, graphite, graphite-like carbon (conductive material), and metal oxides (eg, Ti, Mo, Ni, Al, etc.) Metal oxide) or the like may be employed. When a metal oxide is used as the material of the infrared absorption part, for example, a metal oxide film may be formed by sputtering or CVD, or Ti, Mo, Ni, Al, etc. A metal oxide film may be formed by oxidizing at least a part of the metal film (for example, a part on the surface side of the metal film) after the metal film made of the metal material is formed. The infrared absorption part is not limited to the thin film formation technique, but is formed by a porous layer (porous silicon layer) formed by making a part of the periphery of the semiconductor lens part 22 porous using an anodization technique. It may be configured.

Further, as shown in FIG. 6, the infrared absorption part is a high-concentration impurity doping in which an impurity (for example, boron) is highly doped at a concentration of 1 × 10 ¹⁹ cm ⁻³ or more in the peripheral part of the semiconductor lens part 22. For example, as a method of manufacturing a thermal infrared detection device, a getter is formed in a space surrounded by the thermal infrared detection element 1 and the package 2. It is possible to prevent the infrared absorption characteristics of the infrared absorption part from changing during heating for activation when a manufacturing method is employed in which heating is performed to activate the getter. .

  Here, when the infrared absorption part is constituted by the high concentration impurity doping layer 26, the high concentration impurity doping layer 26 is used in the method for forming the semiconductor lens portion 22 described in the first embodiment in the anode 32 ( It is conceivable to use it as shown in FIG. Hereinafter, a method for forming the semiconductor lens portion 22 in this case will be described with reference to FIG. 7, but description of the same steps as those in the first embodiment will be appropriately omitted.

First, after performing a cleaning process and a marking process on the second silicon wafer 20, a mask layer 36 (for example, a resist layer, etc.) patterned for forming a high concentration impurity doping layer on one surface side of the second silicon wafer 20 is formed. A mask layer forming step for forming a silicon oxide film or the like, and then a doping step for forming a high-concentration impurity doping layer 26 by doping impurities from the one surface side of the second silicon wafer 20. The structure shown in FIG. 7A is obtained. In the doping step, for example, the low-resistance high-concentration impurity doping layer 26 may be formed by ion implantation and thermal diffusion of B ⁺ , but not limited to the ion implantation method, for example, by a diffusion method. Also good. Here, the pattern of the high concentration impurity doping layer 26 is designed according to the shape of the semiconductor lens portion 22, and the opening pattern of the mask layer 36 is designed according to the pattern design of the high concentration impurity doping layer 26. is there. In the example of FIG. 7, the mask layer forming step and the doping step constitute an anode forming step.

  After the doping process, a mask layer removing process for removing the mask layer 36 is performed to obtain the structure shown in FIG. 7B (in FIG. 7B, the above-mentioned one of the second silicon wafers 20 is obtained). It is shown so that the front side is the lower side).

  After the mask layer removing step, a current introduction electrode (not shown) in contact with the high-concentration impurity doping layer 26 is disposed on the one surface side of the second silicon wafer 20, and the second silicon wafer 20 is placed in the anodic oxidation electrolyte. Between the cathode disposed opposite to the other surface side of the silicon wafer 20 (the upper surface side in FIG. 7B) and the anode made of the high-concentration impurity doping layer 26 through the current introduction electrode. A structure shown in FIG. 7C is obtained by performing an anodic oxidation process for forming a porous portion 34 as a removal site on the other surface side of the second silicon wafer 20.

  After the end of the anodizing process, a porous part removing process for removing the porous part 34 is performed. Here, if an alkaline solution (for example, KOH, TMAH, NaOH, etc.) or an HF solution is used as an etching solution for removing the porous portion 34, the porous portion 34 is selectively removed in the porous portion removing step. The semiconductor lens portion 22 having the structure shown in FIG. 7D having the above-described high-concentration impurity doping layer 26 as an infrared absorbing portion in the peripheral portion can be formed.

  Thus, according to the method of forming the semiconductor lens portion 22, in the anode forming step, the second silicon wafer 20 is doped with impurities from the one surface side of the second silicon wafer 20 to thereby form the second silicon wafer 20. Since the high-concentration impurity doping layer 26 also serving as the anode is formed in the wafer 20, no Schottky barrier is generated between the anode and the second silicon wafer 20. Is prevented by the Schottky barrier, the desired current value can not be obtained or the instability of the Schottky barrier causes in-plane variation in contact resistance, and in the anodizing process, Since the solution for etching away the oxides of the constituent elements of the second silicon wafer 20 is used as the electrolytic solution, the thickness is obtained with a desired thickness distribution. Can be easily formed in one anodic oxidation step, and the porous portion 34 can be selectively removed in the porous portion removing step as desired. Since the semiconductor lens portion 22 having a shape can be formed and the high-concentration impurity doping layer 26 can be left as an infrared absorbing portion, the positional accuracy of the infrared absorbing portion can be increased.

(Embodiment 4)
The basic configuration of the thermal infrared detector of the present embodiment is substantially the same as that of the first embodiment, and the package 2 uses the second silicon wafer 20 (see FIG. 3A) as shown in FIG. Formed by using a package lid 2a integrally having a semiconductor lens portion 22 and being spaced apart from the one surface of the thermal infrared detecting element 1, and a third silicon wafer as a third wafer. The difference is that it is configured by a frame-shaped (here, rectangular frame-shaped) spacer 2b interposed between the thermal infrared detecting element 1 and the package lid 2a. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted. However, the package lid 2a in the present embodiment is formed in the same shape as the package 2 in the first embodiment.

  By the way, in the thermal infrared detectors of the first to third embodiments, when the focus position determined by the lens shape of the semiconductor lens unit 22 is set to the position of the infrared detector 13 in order to achieve higher sensitivity, As the distance becomes longer, it may be necessary to increase the thickness of the second silicon wafer 20. On the other hand, since the processed shape of the semiconductor lens portion 22 is also affected by the thickness of the second silicon wafer 20, when a desired lens shape is to be obtained, if the thickness of the second silicon wafer 20 is limited, it is formed. May be difficult. Similarly, in the conventional thermal infrared detector shown in FIG. 13, depending on the thickness of the second semiconductor substrate 104, it is difficult to align the focal point of the microlens unit 105 with the infrared detector 102. There is.

  On the other hand, in the thermal infrared detector of the present embodiment, the semiconductor lens is adjusted by appropriately adjusting the height of the spacer 2b, that is, by appropriately setting or adjusting the thickness of the third silicon wafer. It becomes possible to easily adjust the position of the focal point of the unit 22 to the position of the infrared detecting unit 13 and increase the sensitivity regardless of the thickness of the second silicon wafer 20, so that the semiconductor lens unit 22 having a desired lens shape is obtained. Can be easily formed.

  In the manufacture of the thermal infrared detection device of this embodiment, either one of the first silicon wafer formed with a plurality of thermal infrared detection elements 1 and the second silicon wafer 20 formed with a plurality of package lids 2a and a spacer. After bonding the third silicon wafer formed with a plurality of 2b at the wafer level, the other and the third silicon wafer are bonded at the wafer level to form a wafer level package structure. What is necessary is just to divide | segment into the external size of the thermal-type infrared detection element 1, By employ | adopting such a manufacturing method, a small and low-cost thermal-type infrared detection apparatus can be provided.

(Embodiment 5)
The basic configuration of the thermal infrared detector of the present embodiment is substantially the same as that of the fourth embodiment, and only the shape of the package lid 2a in the package 2 is different as shown in FIG. That is, the thermal infrared detector of the present embodiment is different only in that the surface of the package lid 2a on the thermal infrared detector 1 side is flat, and the package lid 2a can be easily formed. . Since the other configuration is the same as that of the fourth embodiment, the same components as those of the fourth embodiment are denoted by the same reference numerals and description thereof is omitted.

  In the thermal infrared detection device of the present embodiment, the distance between the infrared detection unit 13 and the semiconductor lens unit 22 is adjusted only by the thickness of the third silicon wafer, so the first silicon wafer side of the second silicon wafer 20 is adjusted. It is not necessary to form the thermal insulation recess 21 (see FIG. 8), the thickness restriction of the second silicon wafer 20 is reduced, and the thinned portion due to the formation of the thermal insulation recess 21 and the portion Since it is not necessary to consider the breakage of the package lid 2a due to stress concentration near the boundary with the peripheral portion, the thickness of the second silicon wafer 20 can be set in consideration of only the desired lens shape. When the space surrounded by the thermal infrared detecting element 1 and the package 2 is evacuated, it is strong against external pressure, and the package lid 2 is damaged by the pressure. Manufacturing yield can stop increases, Moreover, because it shortens the manufacturing process by eliminating the step of forming the thermal insulating recess 21, there is an advantage that attained at low cost.

(Embodiment 6)
The basic configuration of the thermal infrared detector of the present embodiment is substantially the same as that of the fourth embodiment, and the shape of the semiconductor lens portion 22 is different as shown in FIG. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 4, and description is abbreviate | omitted.

  The semiconductor lens portion 22 in the present embodiment has a surface on the thermal infrared detection element 1 side formed in a convex curved surface, and a surface opposite to the thermal infrared detection element 1 side is formed in a planar shape. Since the surface opposite to the thermal infrared detection element 1 side in 2 is flat, the semiconductor lens portion 22 is less likely to be damaged.

  Thus, in the thermal infrared detection device of the present embodiment, it is possible to suppress a decrease in sensitivity due to a scratch on the semiconductor lens portion 22, and to improve quality and reliability.

  In the present embodiment, the through-hole wirings 15 a and 15 c that are electrically connected to the infrared detection unit 13 are formed in the thermal infrared detection element 1, but the through-hole wirings 15 a and 15 c are formed in the package 2. Alternatively, when mounting on the circuit board 5, a window hole may be formed in a portion of the circuit board 5 corresponding to the semiconductor lens portion 22.

(Embodiment 7)
The basic configuration of the thermal infrared detector of the present embodiment is substantially the same as that of the first embodiment, and as shown in FIG. 11, the thermal infrared detector is formed using the first wafer that is the basis of the thermal infrared detector 1. A difference is that a signal processing circuit 19 formed of an integrated circuit including an amplifier circuit that amplifies the output signal of the infrared detection unit 13 is formed on the one surface side of the thermal infrared detection element 1. In addition, the same code | symbol is attached | subjected and demonstrated to the component similar to Embodiment 1. FIG.

  The signal processing circuit 19 is integrated with the amplification circuit, a window comparator at the subsequent stage of the amplification circuit, and the like. The external connection electrodes 16 are joined to the conductor pattern (not shown) of the circuit board 5 via the bumps 6.

  Thus, in the thermal infrared detector of the present embodiment, the wiring length between the infrared detector 13 and the amplifier circuit can be shortened, noise from the wiring connecting the two can be prevented, and the signal Since the package 2 can prevent external light from entering the processing circuit 19, noise due to photoexcitation of carriers in the signal processing circuit 19 can be prevented, and high sensitivity can be achieved. In addition, the thermal infrared detector including the signal processing circuit 19 can be downsized as compared with the case where the infrared detection unit 13 and the signal processing circuit 19 are formed using different wafers and packaged separately. There is also an advantage.

  In other embodiments 1 to 6, the signal processing circuit 19 may be formed integrally with the thermal infrared detection element 1 as a matter of course. Also in the fourth to seventh embodiments, the infrared absorbing portion such as the infrared reflecting film 25 (see FIG. 5) and the high-concentration impurity doping layer 26 (see FIGS. 6 and 7 (d)) described in the third embodiment. Etc. may be provided.

  By the way, in each said embodiment, although the p-type silicon wafer is employ | adopted as a 2nd wafer used as the foundation of the semiconductor lens part 22, the material of a 2nd wafer is not restricted to Si, Ge, SiC, GaAs Other materials that can be made porous by anodic oxidation treatment such as GaP, InP, etc. may be used, and the conductivity type is not limited to p-type but may be n-type. However, when the conductivity type of the second wafer is p-type, the porous portion 34 can be formed without irradiating the second wafer with light in the anodizing step. Compared with the case where the conductivity type is n-type, the anodizing apparatus used in the anodizing step can be simplified and the cost can be reduced.

  As the electrolytic solution used in the anodizing step and removing the oxide of the constituent element of the second wafer (semiconductor substrate), for example, an electrolytic solution as shown in Table 1 below may be used.

1 is a schematic cross-sectional view of a thermal infrared detection device in Embodiment 1. FIG. It is a schematic plan view of the thermal type infrared detection element in the same as the above. It is explanatory drawing of the formation method of the semiconductor lens part in the same as the above. It is a schematic sectional drawing of the thermal type infrared rays detection apparatus in Embodiment 2. It is a schematic sectional drawing of the thermal type infrared rays detection apparatus in Embodiment 3. It is a schematic sectional drawing which shows the other structural example of the semiconductor lens part in the same as the above. It is explanatory drawing of the formation method of the semiconductor lens part of the other structural example same as the above. It is a schematic sectional drawing of the thermal type infrared rays detection apparatus in Embodiment 4. It is a schematic sectional drawing of the thermal type infrared rays detection apparatus in Embodiment 5. It is a schematic sectional drawing of the thermal type infrared rays detection apparatus in Embodiment 6. It is a schematic sectional drawing of the thermal type infrared rays detection apparatus in Embodiment 7. It is explanatory drawing of the manufacturing method of the conventional metal mold | die for microlenses. It is a schematic sectional drawing of the conventional thermal type infrared rays detection apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Thermal type infrared detection element 2 Package 2a Package lid 2b Spacer 10 Support substrate 11 Insulating layer 11a Base part 11b Beam part 13 Infrared detection part 14a, 14c Metal wiring 15a, 15c Through-hole wiring 16a, 16c External connection electrode 17 Infrared absorption Layer 18 Bonding metal layer 19 for sealing 19 Signal processing circuit 20 Second silicon wafer (second wafer)
21 Insulating concave portion 22 Semiconductor lens portion 23 Multilayer interference filter 24 Multilayer interference filter 25 Infrared reflecting film 26 High-concentration impurity doping layer (infrared absorbing portion)
28 Bonding metal layer for sealing 32 Anode 34 Porous part

Claims (14)

  A thermal infrared detection element formed using a first wafer and formed with an infrared detection part thermally insulated from the periphery on one surface side, and a shape surrounding the infrared detection part on the one surface side of the thermal infrared detection element And a package sealed to the thermal infrared detection element, wherein the package is formed using at least a second wafer, the material of the second wafer is a semiconductor material, and the thermal infrared detection element and the package A through-hole wiring electrically connected to the infrared detection unit is formed on one side, the external size of the thermal infrared detection element and the package is the same, and a semiconductor lens unit formed of a part of the second wafer is included in the package. A thermal infrared detector characterized by being integrally formed.   The package is formed using the second wafer, and a thermal insulation recess for thermally insulating the infrared detection unit is formed on a surface of the package on the thermal infrared detection element side, for thermal insulation in the package 2. The thermal infrared detection device according to claim 1, wherein a peripheral part of the recess is joined to a peripheral part of the thermal infrared detection element.   A package lid formed by using the second wafer and integrally including the semiconductor lens portion, and being disposed apart from the one surface of the thermal infrared detection element; and a third wafer. 2. The thermal infrared detection device according to claim 1, wherein the thermal infrared detection device comprises a frame-shaped spacer formed between the thermal infrared detection element and a package lid.   4. The thermal infrared detection device according to claim 1, wherein a space surrounded by the thermal infrared detection element and the package is a vacuum atmosphere. 5.   5. The multilayer interference filter that transmits infrared rays in a desired wavelength region and reflects infrared rays in an unnecessary wavelength region is formed on at least one surface of the semiconductor lens portion. The thermal infrared detector according to item 1.   6. The package according to claim 1, further comprising an infrared reflecting film that reflects infrared rays that are incident on a light receiving surface of the thermal infrared detecting element through a peripheral portion of the semiconductor lens portion. The thermal infrared detection apparatus according to any one of the above.   6. The package according to claim 1, wherein the package is provided with an infrared absorbing portion that absorbs infrared rays that are about to enter the light receiving surface of the thermal infrared detecting element through a peripheral portion of the semiconductor lens portion. The thermal infrared detection apparatus according to any one of the above.   8. The thermal infrared detection device according to claim 7, wherein the infrared absorption part is composed of a high-concentration impurity doping layer that is more highly doped than a peripheral part of the semiconductor lens part.   9. The thermal infrared detection device according to claim 1, wherein both the thermal infrared detection element and the package are grounded.   The thermal infrared detection element is formed using the first wafer, and a signal processing circuit formed of an integrated circuit including an amplification circuit that amplifies an output signal of the infrared detection unit is formed on the one surface side. The thermal infrared detection device according to any one of claims 1 to 9, wherein   3. A method of manufacturing a thermal infrared detection device according to claim 2, wherein a first wafer on which a plurality of thermal infrared detection elements are formed and a second wafer on which a plurality of packages are formed are bonded at a wafer level. A method of manufacturing a thermal infrared detection device, comprising forming a wafer level package structure and dividing the wafer level package structure into an outer size of a thermal infrared detection element.   4. A method of manufacturing a thermal infrared detection device according to claim 3, wherein one of the first wafer having a plurality of thermal infrared detection elements and the second wafer having a plurality of package lids and a plurality of spacers. After bonding the formed third wafer at the wafer level, the other wafer and the third wafer are bonded at the wafer level to form a wafer level package structure, and the thermal infrared detection element is formed from the wafer level package structure. A method for manufacturing a thermal-type infrared detection device, characterized by being divided into a plurality of external sizes.   In forming the semiconductor lens portion, an anode forming step of forming an anode having a pattern designed according to a desired lens shape on one surface side of the second wafer, and the other surface of the second wafer in an electrolytic solution An anodic oxidation step of forming a porous portion serving as a removal site on the other surface side of the second wafer by energization between the cathode and the anode disposed opposite to each other, and a porosity for removing the porous portion In the anode forming step, the anode is formed so that the contact between the anode and the second wafer is ohmic contact, and in the anodic oxidation step, the electrolyte is used as the electrolyte. 13. The method for manufacturing a thermal infrared detection device according to claim 11, wherein a solution for etching away oxides of constituent elements of the second wafer is used.   A thermal infrared detection element formed using a first wafer and formed with an infrared detection part thermally insulated from the surrounding on one surface side, and a shape surrounding the infrared detection part on the one surface side of the thermal infrared detection element The package is formed using at least a second wafer, the material of the second wafer is a semiconductor material, and the external size of the thermal infrared detector and the package is the same A method of manufacturing a thermal infrared detection device in which a semiconductor lens portion made of a part of a second wafer is integrally formed on a package, wherein the semiconductor lens portion is formed in a pattern according to a desired lens shape. An anode forming step for forming the designed anode on the one surface side of the second wafer, and a second electrode by energizing between the anode and the anode disposed opposite to the other surface side of the second wafer in the electrolytic solution. of An anodic oxidation step for forming a porous portion serving as a removal site on the other surface side of the wafer, and a porous portion removing step for removing the porous portion. In the anode forming step, the anode and the second portion The anode is formed so that the contact with the wafer becomes ohmic contact, and in the anodic oxidation step, a solution that removes the oxide of the constituent element of the second wafer by etching is used as the electrolytic solution. Infrared detector manufacturing method.

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