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JP2007142456A - Electrostatic chuck - Google Patents

Electrostatic chuck Download PDF

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Publication number
JP2007142456A
JP2007142456A JP2007025992A JP2007025992A JP2007142456A JP 2007142456 A JP2007142456 A JP 2007142456A JP 2007025992 A JP2007025992 A JP 2007025992A JP 2007025992 A JP2007025992 A JP 2007025992A JP 2007142456 A JP2007142456 A JP 2007142456A
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insulating layer
surface insulating
electrostatic chuck
ωcm
substrate
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JP4879771B2 (en
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Takahiro Kawaguchi
貴弘 河口
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Fujitsu Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrostatic chuck in which residual chucking effect is reduced and which has a long lifetime. <P>SOLUTION: The electrostatic chuck comprises a substrate 12, a surface insulating layer 14 having electrodes 16a, 16b, and an adhesive layer 22 that bonds the surface insulating layer and the substrate, wherein the adhesive layer 22 has the resistivity (namely, 10<SP>14</SP>Ω cm or higher) equivalent to that of the surface insulating layer 14. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明はＣＶＤやエッチング等の半導体の製造行程やその他の処理、運搬において使用される静電チャックに関する。   The present invention relates to an electrostatic chuck used in semiconductor manufacturing processes such as CVD and etching, and other processing and transportation.

ＣＶＤやエッチング等の半導体の製造行程においては、ウエハが真空チャンバ内で静電チャックにより保持され、種々の処理が行われる。チップのパターンの細分化によって、微細なゴミが問題視されるようになり、メカニカルなチャックによる発塵や処理時のゴミが問題になっている。このような観点から静電チャックの採用率が増えてきている。   In semiconductor manufacturing processes such as CVD and etching, a wafer is held by an electrostatic chuck in a vacuum chamber, and various processes are performed. As the chip pattern is subdivided, fine dust is regarded as a problem, and dust generated by a mechanical chuck or dust during processing has become a problem. From this point of view, the adoption rate of electrostatic chucks is increasing.

静電チャックは、基板と、電極を有する表面絶縁層（誘電体）とを備え、ウエハを静電チャックに吸着保させるときに、ウエハは表面絶縁層の上に載置される。ウエハは、ウエハと電極との間に作用するクーロン力によって表面絶縁層に保持される。このような静電チャックは例えば特開平７−１８４３８号公報に開示されている。   The electrostatic chuck includes a substrate and a surface insulating layer (dielectric) having electrodes, and the wafer is placed on the surface insulating layer when the wafer is attracted and held by the electrostatic chuck. The wafer is held on the surface insulating layer by a Coulomb force acting between the wafer and the electrode. Such an electrostatic chuck is disclosed, for example, in JP-A-7-18438.

静電チャックの表面絶縁層は接着剤により基板に接着される。例えば、表面絶縁層はセラミックで作られ、基板はアルミニウムで作られ、表面絶縁層を基板に接着するためにシリコン接着剤が使用される。半導体の製造行程においては、ウエハはＣＶＤやエッチングのために高温の処理室内で処理されることがあり、静電チャックはウエハとともに高温にさらされる。シリコン接着剤は表面絶縁層と基板の熱膨張差を吸収するためには有効な接着剤である。   The surface insulating layer of the electrostatic chuck is bonded to the substrate with an adhesive. For example, the surface insulating layer is made of ceramic, the substrate is made of aluminum, and a silicon adhesive is used to adhere the surface insulating layer to the substrate. In the semiconductor manufacturing process, a wafer may be processed in a high-temperature processing chamber for CVD or etching, and the electrostatic chuck is exposed to a high temperature together with the wafer. The silicon adhesive is an effective adhesive for absorbing the difference in thermal expansion between the surface insulating layer and the substrate.

静電チャックは、通電することにより吸着作用が生じ、通電を停止することにより吸着作用がなくなる。通電を停止したら、直ちに吸着作用がなくなってウエハを静電チャックから取り出すことができることが望ましい。   The electrostatic chuck generates an attracting action when energized, and disappears when the energization is stopped. It is desirable that when the energization is stopped, the wafer can be taken out of the electrostatic chuck immediately after the adsorption action is lost.

しかし、表面絶縁層及び接着剤層に電荷が蓄積されていると、通電を停止しても、残留吸着作用が生じることがある。残留吸着作用は、表面絶縁層及び接着剤層の体積固有抵抗の値によって大きくなったり、小さくなったりする。残留吸着作用が大きいと、ウエハを静電チャックから簡単に取り出すことができなくなる。そこで、ウエハを裏面からピンによって突き上げて、強制的にウエハを離脱させることがある。しかし、この場合には、ウエハの割れや、跳ねや、放電等が発生し、歩留りが低下する問題点がある。   However, if electric charges are accumulated in the surface insulating layer and the adhesive layer, a residual adsorption action may occur even when the energization is stopped. The residual adsorption action increases or decreases depending on the volume resistivity values of the surface insulating layer and the adhesive layer. If the residual adsorption action is large, the wafer cannot be easily removed from the electrostatic chuck. Therefore, the wafer may be forced out by pushing it up from the back surface with pins. However, in this case, there is a problem that the yield is lowered due to the occurrence of cracking, jumping, or discharging of the wafer.

また、ウエハの裏面からガスを吹き出してウエハを離脱させたり、離脱時に処理とは別に再度短時間プラズマを起こし、残留電荷の除去を行ったりする試みがある。しかし、これらの方法では、スループットの低下を招く。   There are also attempts to blow out gas from the back surface of the wafer to release the wafer, or to generate plasma again for a short time separately from the processing at the time of removal to remove residual charges. However, these methods cause a decrease in throughput.

さらに、シリコン接着剤によって表面絶縁層を基板に接着する構成においては、例えばエッチング処理（特に等方性エッチング）において、シリコン接着剤がエッチングされてしまい、寿命が短くなるとともに、絶縁破壊を引き起こす原因になることがある。このため、静電チャック全体をセラミックで作る等の試みがなされているが、この方式では熱伝導性が極端に悪く、価格も高くなるという問題点があった。   Further, in the configuration in which the surface insulating layer is bonded to the substrate with the silicon adhesive, for example, in the etching process (especially isotropic etching), the silicon adhesive is etched, which shortens the life and causes the dielectric breakdown. May be. For this reason, attempts have been made to make the entire electrostatic chuck from ceramics, but this method has the problem that the thermal conductivity is extremely poor and the price is high.

本発明の目的は、残留吸着作用を低減でき、且つ長寿命の静電チャックを提供することである。   An object of the present invention is to provide an electrostatic chuck that can reduce the residual adsorption action and has a long life.

本発明による静電チャックは、基板と、電極を有する表面絶縁層と、該表面絶縁層と該基板とを接着する接着剤層とを備え、該表面絶縁層は１０14Ωcm以上の抵抗を有し、該接着剤層は１０14Ωcm以上の抵抗を有することを特徴とする静電チャック。 The electrostatic chuck according to the present invention includes a substrate, a surface insulating layer having electrodes, and an adhesive layer that bonds the surface insulating layer and the substrate, and the surface insulating layer has a resistance of 10 14 Ωcm or more. And the adhesive layer has a resistance of 10 14 Ωcm or more.

従って、接着剤層は表面絶縁層と同等の抵抗をもつようにする。これによって、表面絶縁層と接着剤層とが、残留吸着作用を低減又は生じさせないような体積固有抵抗をもつように設定され、よって残留吸着作用を低減又は解消することができる。また、セラミック系接着剤は熱伝導性のよいものを選ぶのが好ましい。   Accordingly, the adhesive layer has a resistance equivalent to that of the surface insulating layer. Accordingly, the surface insulating layer and the adhesive layer are set to have a volume specific resistance that does not reduce or cause the residual adsorption action, and thus the residual adsorption action can be reduced or eliminated. In addition, it is preferable to select a ceramic adhesive having good thermal conductivity.

請求項２においては、静電チャックは、基板と、電極を有する表面絶縁層と、該表面絶縁層と該基板とを接着する接着剤層とを備え、該表面絶縁層は１０8 Ωcm以上１０11Ωcm以下の抵抗を有し、該接着剤層は１０8 Ωcm以上１０11Ωcm以下の抵抗を有することを特徴とする。 The electrostatic chuck includes a substrate, a surface insulating layer having an electrode, and an adhesive layer that adheres the surface insulating layer and the substrate, and the surface insulating layer is 10 8 Ωcm or more and 10 or more. It has a resistance of 11 Ωcm or less, and the adhesive layer has a resistance of 10 8 Ωcm or more and 10 11 Ωcm or less.

請求項３においては、該表面絶縁層と該基板との間で該接着剤層を取り囲むシールとを更に有することを特徴とする。また、請求項４では、該電極は、該表面絶縁層に埋設してなることを特徴とする。体積固有抵抗が１０8 Ωcm以下のものは、静電的には導通みなされ、あまり用いられない。体積固有抵抗が１０11Ωcmから１０14Ωcmの間にあると、残留吸着作用が発生しやすい。 According to a third aspect of the present invention, the apparatus further includes a seal that surrounds the adhesive layer between the surface insulating layer and the substrate. According to a fourth aspect of the present invention, the electrode is embedded in the surface insulating layer. Those having a volume resistivity of 10 8 Ωcm or less are considered to be electrically conductive and are rarely used. If the volume resistivity is between 10 11 Ωcm and 10 14 Ωcm, the residual adsorption action tends to occur.

これらの構成においては、セラミック系の接着剤がエッチング等により損傷されにくく、長寿命の静電チャックを提供するのに好適である。また、セラミック系の接着剤はその含有成分の調整により、その体積固有抵抗を制御することができる。   In these configurations, the ceramic adhesive is not easily damaged by etching or the like, and is suitable for providing a long-life electrostatic chuck. In addition, the volume resistivity of the ceramic adhesive can be controlled by adjusting the components contained therein.

また、請求項４に記載の静電チャックは、基板と、電極を有する表面絶縁層と、該表面絶縁層と該基板とを接着する接着剤層と、該表面絶縁層と該基板との間で該接着剤層を取り囲むシールとからなることを特徴とする。この構成では、接着剤層がシールによって取り囲まれ、このシールがエッチング等により損傷されにくい材料で形成されるので、接着剤層が損傷しない。従って、静電チャックの寿命は低下しない。   The electrostatic chuck according to claim 4 includes a substrate, a surface insulating layer having an electrode, an adhesive layer for bonding the surface insulating layer and the substrate, and between the surface insulating layer and the substrate. And a seal surrounding the adhesive layer. In this configuration, the adhesive layer is surrounded by the seal, and the seal is formed of a material that is not easily damaged by etching or the like, so that the adhesive layer is not damaged. Therefore, the life of the electrostatic chuck does not decrease.

以上説明したように、本発明によれば、残留吸着作用を低減でき、且つ長寿命の静電チャックを得ることができる。   As described above, according to the present invention, the residual chucking action can be reduced and a long-life electrostatic chuck can be obtained.

以下本発明の実施例について説明する。   Examples of the present invention will be described below.

図１は本発明の第１実施例の静電チャック１０を示す図である。静電チャック１０は、アルミニウムの基板１２と、円板状のセラミックの表面絶縁層１４とからなる。この表面絶縁層１４は平坦な円板状の電極１６ａ，１６ｂを有する。各電極１６ａ，１６ｂは例えば半円形状、あるいは櫛歯状に形成されることができる。電極１６ａ，１６ｂは例えば蒸着により表面絶縁層１４の表面に設けられ、導線１８，２０により電源に接続される。ウエハＷは表面絶縁層１４にのせられ、クーロン力により静電チャック１０に保持される。   FIG. 1 is a diagram showing an electrostatic chuck 10 according to a first embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disk-shaped ceramic surface insulating layer 14. The surface insulating layer 14 has flat disk-shaped electrodes 16a and 16b. Each electrode 16a, 16b can be formed, for example, in a semicircular shape or a comb shape. The electrodes 16a and 16b are provided on the surface of the surface insulating layer 14 by vapor deposition, for example, and are connected to a power source by conducting wires 18 and 20. The wafer W is placed on the surface insulating layer 14 and held on the electrostatic chuck 10 by Coulomb force.

表面絶縁層１４は接着剤層２２により基板１２に接着されている。接着剤層２２は表面絶縁層１４と同等の抵抗をもつセラミック系の接着剤（例えばジルコニア、マグネシア、アルミナベースのもの）からなる。例えば、表面絶縁層１４が体積固有抵抗が１０14Ωcm以上の高抵抗型のセラミックからなる場合には、接着剤層２２も体積固有抵抗が１０14Ωcm以上の表面絶縁層１４と同等の抵抗をもつようにする。また、表面絶縁層１４が体積固有抵抗が１０8 Ωcmから１０11Ωcmの範囲にある低抵抗型のセラミックからなる場合には、接着剤層２２も体積固有抵抗が１０8 Ωcmから１０11Ωcmの範囲にある表面絶縁層１４と同等の抵抗をもつようにする。 The surface insulating layer 14 is bonded to the substrate 12 by an adhesive layer 22. The adhesive layer 22 is made of a ceramic adhesive having a resistance equivalent to that of the surface insulating layer 14 (for example, zirconia, magnesia, or alumina base). For example, when the surface insulating layer 14 is made of a high-resistance ceramic having a volume resistivity of 10 14 Ωcm or more, the adhesive layer 22 has a resistance equivalent to that of the surface insulation layer 14 having a volume resistivity of 10 14 Ωcm or more. Have it. When the surface insulating layer 14 is made of a low resistance type ceramic having a volume resistivity of 10 8 Ωcm to 10 11 Ωcm, the adhesive layer 22 also has a volume resistivity of 10 8 Ωcm to 10 11 Ωcm. It has resistance equivalent to the surface insulating layer 14 in the range.

図２は本発明の第２実施例の静電チャック１０を示す図である。静電チャック１０は、アルミニウムの基板１２と、円板状のセラミックの表面絶縁層１４とからなる。この表面絶縁層１４は電極１６ａ，１６ｂを有し、電極１６ａ，１６ｂは表面絶縁層１４の内部に埋設されている。例えば、２枚のセラミックのグリーンシートを準備し、一方のグリーンシートに電極１６ａ，１６ｂを蒸着しておき、２枚のグリーンシートを重ねて焼成すれば、この構成の表面絶縁層１４を得ることができる。電極１６ａ，１６ｂは導線１８，２０により電源に接続される。この場合にも、表面絶縁層１４は接着剤層２２により基板１２に接着され、接着剤層２２は表面絶縁層１４と同等の抵抗をもつセラミック系の接着剤からなる。   FIG. 2 is a diagram showing an electrostatic chuck 10 according to a second embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disk-shaped ceramic surface insulating layer 14. The surface insulating layer 14 has electrodes 16 a and 16 b, and the electrodes 16 a and 16 b are embedded in the surface insulating layer 14. For example, when two ceramic green sheets are prepared, electrodes 16a and 16b are vapor-deposited on one green sheet, and the two green sheets are stacked and fired, the surface insulating layer 14 having this configuration is obtained. Can do. The electrodes 16a and 16b are connected to a power source by conducting wires 18 and 20. Also in this case, the surface insulating layer 14 is bonded to the substrate 12 by the adhesive layer 22, and the adhesive layer 22 is made of a ceramic adhesive having the same resistance as the surface insulating layer 14.

図３は本発明の第３実施例の静電チャック１０を示す図である。静電チャック１０は、アルミニウムの基板１２と、円板状のセラミックの表面絶縁層１４とからなる。この表面絶縁層１４は平坦な１つの円板状の電極１６を有し、電極１６が図１と同様に表面絶縁層１４の表面に蒸着されている。電極１６は導線１８により電源に接続される。この場合にも、表面絶縁層１４は接着剤層２２により基板１２に接着され、接着剤層２２は表面絶縁層１４と同等の抵抗をもつセラミック系の接着剤からなる。   FIG. 3 is a diagram showing an electrostatic chuck 10 according to a third embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disk-shaped ceramic surface insulating layer 14. The surface insulating layer 14 has one flat disk-like electrode 16, and the electrode 16 is deposited on the surface of the surface insulating layer 14 as in FIG. The electrode 16 is connected to a power source by a conductor 18. Also in this case, the surface insulating layer 14 is bonded to the substrate 12 by the adhesive layer 22, and the adhesive layer 22 is made of a ceramic adhesive having the same resistance as the surface insulating layer 14.

図４は本発明の第４実施例の静電チャック１０を示す図である。静電チャック１０は、アルミニウムの基板１２と、円板状のセラミックの表面絶縁層１４とからなる。この表面絶縁層１４は平坦な１つの円板状の電極１６を有し、電極１６が図２と同様に表面絶縁層１４の内部に埋設されている。電極１６は導線１８により電源に接続される。この場合にも、表面絶縁層１４は接着剤層２２により基板１２に接着され、接着剤層２２は表面絶縁層１４と同等の抵抗をもつセラミック系の接着剤からなる。   FIG. 4 is a diagram showing an electrostatic chuck 10 according to a fourth embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disk-shaped ceramic surface insulating layer 14. The surface insulating layer 14 has one flat disk-shaped electrode 16, and the electrode 16 is embedded in the surface insulating layer 14 as in FIG. 2. The electrode 16 is connected to a power source by a conductor 18. Also in this case, the surface insulating layer 14 is bonded to the substrate 12 by the adhesive layer 22, and the adhesive layer 22 is made of a ceramic adhesive having a resistance equivalent to that of the surface insulating layer 14.

図５は本発明の第５実施例の静電チャック１０を示す図である。静電チャック１０は、アルミニウムの基板１２と、円板状のセラミックの表面絶縁層１４とからなる。この表面絶縁層１４は平坦な１つの円板状の電極１６あるいは２つの電極１６ａ，１６ｂを有する。電極１６，１６ａ，１６ｂは導線により電源に接続される。   FIG. 5 is a diagram showing an electrostatic chuck 10 according to a fifth embodiment of the present invention. The electrostatic chuck 10 includes an aluminum substrate 12 and a disk-shaped ceramic surface insulating layer 14. The surface insulating layer 14 has one flat disk-shaped electrode 16 or two electrodes 16a and 16b. The electrodes 16, 16a, 16b are connected to a power source by conducting wires.

この場合にも、表面絶縁層１４は接着剤層２２により基板１２に接着され、接着剤層２２は表面絶縁層１４と同等の抵抗をもつセラミック系の接着剤からなる。また、サイドシール２４が表面絶縁層１４と基板１２との間で接着剤層２２を取り囲むように設けられる。サイドシール２４は、この静電チャック１０に保持されたウエハをエッチングする際にエッチングされない材料で形成されている。   Also in this case, the surface insulating layer 14 is bonded to the substrate 12 by the adhesive layer 22, and the adhesive layer 22 is made of a ceramic adhesive having a resistance equivalent to that of the surface insulating layer 14. A side seal 24 is provided between the surface insulating layer 14 and the substrate 12 so as to surround the adhesive layer 22. The side seal 24 is formed of a material that is not etched when the wafer held by the electrostatic chuck 10 is etched.

図６は上記各実施例において、表面絶縁層１４が体積固有抵抗が１０14Ωcm以上の高抵抗型のセラミック（例えばＡｌ2 Ｏ3 ，ＭｇＯ，ＳｉＯ2 ，ＣａＯを含むもの）からなる場合を示す図である。接着剤層２２も体積固有抵抗が１０14Ωcm以上の表面絶縁層１４と同等の抵抗をもつようにする。 FIG. 6 shows a case where the surface insulating layer 14 is made of a high-resistance ceramic (eg, containing Al 2 O 3 , MgO, SiO 2 , CaO) having a volume resistivity of 10 14 Ωcm or more in each of the above embodiments. FIG. The adhesive layer 22 also has a resistance equivalent to that of the surface insulating layer 14 having a volume resistivity of 10 14 Ωcm or more.

この場合には、表面絶縁層１４及び接着剤層２２の抵抗が非常に高いために、微小な電流も流れず、表面絶縁層１４及び接着剤層２２に電荷が蓄積されない。従って、電極１６，１６ａ，１６ｂへの通電を停止したときに、残留吸着作用は生じず、通電停止と同時に静電チャック１０の吸着力はなくなってウエハを取り出すことができる。   In this case, since the resistance of the surface insulating layer 14 and the adhesive layer 22 is very high, a minute current does not flow, and charges are not accumulated in the surface insulating layer 14 and the adhesive layer 22. Therefore, when the energization to the electrodes 16, 16a, 16b is stopped, the residual adsorption action does not occur, and the adsorption force of the electrostatic chuck 10 disappears at the same time as the energization is stopped, and the wafer can be taken out.

図７は上記各実施例において、表面絶縁層１４が体積固有抵抗が１０8 Ωcmから１０11Ωcmの範囲にある低抵抗型のセラミック（例えばＡｌ2 Ｏ3 ，ＭｇＯ，ＳｉＯ2 ，ＣａＯ，ＴｉＯ2 ，Ｃｒ2 Ｏ2 を含むもの）からなる場合を示す図である。接着剤層２２も体積固有抵抗が１０8 Ωcmから１０11Ωcmの範囲にある表面絶縁層１４と同等の抵抗をもつようにする。 FIG. 7 shows a low resistance type ceramic (for example, Al 2 O 3 , MgO, SiO 2 , CaO, TiO 2) in which the surface insulating layer 14 has a volume resistivity in the range of 10 8 Ωcm to 10 11 Ωcm. , Including Cr 2 O 2 ). The adhesive layer 22 also has a resistance equivalent to that of the surface insulating layer 14 having a volume specific resistance in the range of 10 8 Ωcm to 10 11 Ωcm.

この場合には、表面絶縁層１４及び接着剤層２２の抵抗が比較的に低いために、微小な電流が流れ、表面絶縁層１４及び接着剤層２２に電荷が蓄積される。蓄積された電荷は吸着界面でジョンソンラーベック力として作用し、ケーロン力と合わせて、強力な吸着力を及ぼす。そして、通電を停止したときには、表面絶縁層１４及び接着剤層２２の体積固有抵抗が１０8 Ωcmから１０11Ωcmの範囲にあると、微小な電流は比較的に流れやすいので、蓄積されていた電荷が容易に抜けていき、残留吸着作用はほとんどない。 In this case, since the resistance of the surface insulating layer 14 and the adhesive layer 22 is relatively low, a minute current flows and charges are accumulated in the surface insulating layer 14 and the adhesive layer 22. The accumulated electric charge acts as a Johnson Rabeck force at the adsorption interface, and exerts a strong adsorption force together with the Keron force. When the energization was stopped, if the volume resistivity of the surface insulating layer 14 and the adhesive layer 22 was in the range of 10 8 Ωcm to 10 11 Ωcm, a minute current was relatively easy to flow and was accumulated. The charge easily escapes and there is almost no residual adsorption effect.

表面絶縁層１４及び接着剤層２２、またはそれらの一方の体積固有抵抗が１０11Ωcmから１０14Ωcmの範囲にあると、微小な電流は流れることができて、残留電荷が蓄積され、そして、通電を停止したときには、蓄積されていた電荷が抜けにくく、残留吸着作用が生じる。 When the volume resistivity of the surface insulating layer 14 and the adhesive layer 22 or one of them is in the range of 10 11 Ωcm to 10 14 Ωcm, a minute current can flow, the residual charge is accumulated, and When energization is stopped, the accumulated charge is difficult to escape and a residual adsorption action occurs.

図８は、温度と体積固有抵抗との関係を示す図である。線Ｘは表面絶縁層１４に使用されるセラミックの性質の一例を示す図である。表面絶縁層１４に使用されるセラミックは、温度が高くなると体積固有抵抗が低下する性質がある。従って、使用目的に応じてセラミックの種類を選択する必要がある。体積固有抵抗が１０14Ωcm以上で、微小電流が流れない、高抵抗型のセラミックは、低温領域で使用するのに適している。体積固有抵抗が１０8 Ωcmから１０11Ωcmの範囲にある、電荷の抜けがいい、低高抵抗型のセラミックは、高温領域で使用するのに適している。体積固有抵抗が１０8 Ωcmから１０11Ωcmの範囲にある場合には、電荷が残留しやすく、残留吸着作用があるので、ウエハを静電チャックから取り出す場合には、補助の離脱手段を使用する必要がある。 FIG. 8 is a diagram showing the relationship between temperature and volume resistivity. Line X is a diagram showing an example of the nature of the ceramic used for the surface insulating layer 14. The ceramic used for the surface insulating layer 14 has the property that the volume resistivity decreases as the temperature increases. Therefore, it is necessary to select the type of ceramic according to the purpose of use. A high-resistance ceramic that has a volume resistivity of 10 14 Ωcm or more and does not flow a minute current is suitable for use in a low temperature region. A low and high resistance ceramic having a volume resistivity in the range of 10 8 Ωcm to 10 11 Ωcm is suitable for use in a high temperature region. When the volume resistivity is in the range of 10 8 Ωcm to 10 11 Ωcm, the electric charge tends to remain and has a residual adsorption action. Therefore, when removing the wafer from the electrostatic chuck, an auxiliary detachment means is used. There is a need.

以上は本発明を半導体製造用の静電チャックを例として説明したが、本発明は半導体製造用の静電チャックに限定されるものではない。吸着するものとしてはウエハに限定されるものでもない。例えば、ウエハに限らず、その他の物品を搬送する搬送手段や、加熱、冷却装置等に設けた静電チャックとしてもよい。   Although the present invention has been described by taking the electrostatic chuck for semiconductor manufacture as an example, the present invention is not limited to the electrostatic chuck for semiconductor manufacture. What is adsorbed is not limited to a wafer. For example, not only a wafer but also an electrostatic chuck provided in a transporting means for transporting other articles, a heating / cooling device, or the like.

本発明の実施例の静電チャックを示す断面図である。It is sectional drawing which shows the electrostatic chuck of the Example of this invention. 本発明の他の実施例の静電チャックを示す断面図である。It is sectional drawing which shows the electrostatic chuck of the other Example of this invention. 本発明の他の実施例の静電チャックを示す断面図である。It is sectional drawing which shows the electrostatic chuck of the other Example of this invention. 本発明の他の実施例の静電チャックを示す断面図である。It is sectional drawing which shows the electrostatic chuck of the other Example of this invention. 本発明の他の実施例の静電チャックを示す断面図である。It is sectional drawing which shows the electrostatic chuck of the other Example of this invention. 高抵抗型の表面絶縁層を使用した場合の静電チャックを示す図である。It is a figure which shows the electrostatic chuck at the time of using a high resistance type surface insulating layer. 低抵抗型の表面絶縁層を使用した場合の静電チャックを示す図である。It is a figure which shows the electrostatic chuck at the time of using a low resistance type surface insulating layer. 表面絶縁層を形成するセラミックの温度と抵抗の関係を示す図である。It is a figure which shows the relationship between the temperature of ceramic which forms a surface insulating layer, and resistance.

符号の説明Explanation of symbols

１０ 静電チャック
１２ 基板
１４ 表面絶縁層
１６，１６ａ，１６ｂ 電極
２２ 接着剤層 10 Electrostatic chuck 12 Substrate 14 Surface insulating layer 16, 16a, 16b Electrode 22 Adhesive layer

Claims (4)

基板と、電極を有する表面絶縁層と、該表面絶縁層と該基板とを接着する接着剤層とを備え、該表面絶縁層は１０14Ωcm以上の抵抗を有し、該接着剤層は１０14Ωcm以上の抵抗を有することを特徴とする静電チャック。 A substrate, a surface insulating layer having an electrode, and an adhesive layer that bonds the surface insulating layer and the substrate; the surface insulating layer has a resistance of 10 14 Ωcm or more; An electrostatic chuck having a resistance of 14 Ωcm or more. 基板と、電極を有する表面絶縁層と、該表面絶縁層と該基板とを接着する接着剤層とを備え、該表面絶縁層は１０8 Ωcm以上１０11Ωcm以下の抵抗を有し、該接着剤層は１０8 Ωcm以上１０11Ωcm以下の抵抗を有することを特徴とする静電チャック。 A substrate, a surface insulating layer having an electrode, and an adhesive layer for bonding the surface insulating layer and the substrate, the surface insulating layer having a resistance of 10 8 Ωcm or more and 10 11 Ωcm or less; The electrostatic chuck characterized in that the agent layer has a resistance of 10 8 Ωcm or more and 10 11 Ωcm or less. 該表面絶縁層と該基板との間で該接着剤層を取り囲むシールとを更に有することを特徴とする請求項１又は２記載の静電チャック。   The electrostatic chuck according to claim 1, further comprising a seal surrounding the adhesive layer between the surface insulating layer and the substrate. 該電極は、該表面絶縁層に埋設してなることを特徴とする請求項１乃至３いずれか１項に記載の静電チャック。   The electrostatic chuck according to claim 1, wherein the electrode is embedded in the surface insulating layer.
JP2007025992A 2007-02-05 2007-02-05 Electrostatic chuck Expired - Lifetime JP4879771B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120795A (en) * 1987-11-04 1989-05-12 Hitachi Ltd Thin film luminous element
JPH035176A (en) * 1989-06-02 1991-01-10 Roorand D G Kk Electrostatic attractor
JPH03217043A (en) * 1990-01-22 1991-09-24 Ngk Spark Plug Co Ltd Electrostatic chuck device
JPH0434953A (en) * 1990-05-30 1992-02-05 Denki Kagaku Kogyo Kk Electrostatic chucking plate
JPH05102289A (en) * 1991-10-04 1993-04-23 Tomoegawa Paper Co Ltd Electric joining method of electrostatic chuck device
JPH06224287A (en) * 1993-01-28 1994-08-12 Sumitomo Metal Ind Ltd Manufacture of electrostatic chuck
JPH06225556A (en) * 1992-12-03 1994-08-12 Abisare:Kk Electrostatic sucker
JPH07130826A (en) * 1993-11-01 1995-05-19 Anelva Corp Electrostatic chuck
JPH07263530A (en) * 1993-06-24 1995-10-13 Tokyo Electron Ltd Vacuum processing apparatus and placement table used therefor
JPH07273164A (en) * 1994-03-29 1995-10-20 Ngk Insulators Ltd Embedded electrode and its production
JPH07335731A (en) * 1994-06-07 1995-12-22 Fujitsu Ltd Attraction device and its manufacture
JPH08102485A (en) * 1994-09-30 1996-04-16 Kyocera Corp Electrostatic chuck
JPH08172785A (en) * 1994-07-18 1996-07-02 Applied Materials Inc Electrostatic chuck for magnetic flux processing
JPH08191099A (en) * 1994-09-30 1996-07-23 Nec Corp Electrostatic chuck and its manufacture
JPH08203990A (en) * 1995-01-26 1996-08-09 Hitachi Ltd Electrostatic chuck
JPH10144779A (en) * 1996-11-14 1998-05-29 Fujitsu Ltd Electrostatic chuck

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120795A (en) * 1987-11-04 1989-05-12 Hitachi Ltd Thin film luminous element
JPH035176A (en) * 1989-06-02 1991-01-10 Roorand D G Kk Electrostatic attractor
JPH03217043A (en) * 1990-01-22 1991-09-24 Ngk Spark Plug Co Ltd Electrostatic chuck device
JPH0434953A (en) * 1990-05-30 1992-02-05 Denki Kagaku Kogyo Kk Electrostatic chucking plate
JPH05102289A (en) * 1991-10-04 1993-04-23 Tomoegawa Paper Co Ltd Electric joining method of electrostatic chuck device
JPH06225556A (en) * 1992-12-03 1994-08-12 Abisare:Kk Electrostatic sucker
JPH06224287A (en) * 1993-01-28 1994-08-12 Sumitomo Metal Ind Ltd Manufacture of electrostatic chuck
JPH07263530A (en) * 1993-06-24 1995-10-13 Tokyo Electron Ltd Vacuum processing apparatus and placement table used therefor
JPH07130826A (en) * 1993-11-01 1995-05-19 Anelva Corp Electrostatic chuck
JPH07273164A (en) * 1994-03-29 1995-10-20 Ngk Insulators Ltd Embedded electrode and its production
JPH07335731A (en) * 1994-06-07 1995-12-22 Fujitsu Ltd Attraction device and its manufacture
JPH08172785A (en) * 1994-07-18 1996-07-02 Applied Materials Inc Electrostatic chuck for magnetic flux processing
JPH08102485A (en) * 1994-09-30 1996-04-16 Kyocera Corp Electrostatic chuck
JPH08191099A (en) * 1994-09-30 1996-07-23 Nec Corp Electrostatic chuck and its manufacture
JPH08203990A (en) * 1995-01-26 1996-08-09 Hitachi Ltd Electrostatic chuck
JPH10144779A (en) * 1996-11-14 1998-05-29 Fujitsu Ltd Electrostatic chuck

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
US10892197B2 (en) 2013-12-26 2021-01-12 Lam Research Corporation Edge seal configurations for a lower electrode assembly

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