JP2007140547A - Display device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device which has uniform electric characteristics of first and second electrodes to a liquid crystal layer, is free of influence of a flicker and parallax, has high display quality and lower power consumption, and is equipped with a reflecting function. <P>SOLUTION: A first substrate 100 has a TFT 110 as a switch element provided for each pixel, and a reflective layer 44, which is insulated from the TFT 110 and reflects light made incident from the side of a second substrate 200 through a second electrode 250 made of ITO etc., formed on an insulating film covering the TFT 110. Further, a first electrode 50 which has a work function similar to that of the second electrode 250 and is made of a transparent conductive material such as ITO is formed closer to a liquid crystal layer 300 than to the reflective layer 44, and connected to the TFT 110. With this constitution, the liquid crystal layer 300 can be AC-driven by the first and second electrodes 50 and 250 with good symmetry. The first electrode 50 and TFT 110 are securely connected through a metal layer 42 for connection which is made of metal having a high fusion point. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a reflective or transflective display device having a reflective function.

  Liquid crystal display devices (hereinafter referred to as LCDs) are characterized by being thin and have low power consumption, and are currently widely used as monitors for computer monitors and portable information devices. In such an LCD, liquid crystal is sealed between a pair of substrates, and display is performed by controlling the orientation of the liquid crystal formed on each substrate and positioned between the electrodes, such as a CRT (cathode ray tube) display, Unlike an electroluminescence (hereinafter, EL) display or the like, since it does not emit light in principle, a light source is required to display an image to an observer.

  Therefore, in a transmissive LCD, a transparent electrode is adopted as an electrode formed on each substrate, a light source is disposed behind or on the side of the liquid crystal display panel, and the amount of light transmitted through the light source is controlled by the liquid crystal panel. Bright display is possible even in the dark. However, since the display is always performed by turning on the light source, power consumption by the light source is inevitable, and sufficient contrast cannot be secured in an environment where the outside light is very strong such as outdoors in the daytime. .

  On the other hand, the reflective LCD employs external light such as the sun and room light as a light source, and reflects the ambient light incident on the liquid crystal panel by a reflective electrode formed on the substrate on the non-observation surface side. Then, display is performed by controlling the amount of light emitted from the liquid crystal panel, which is incident on the liquid crystal layer and reflected by the reflective electrode, for each pixel. As described above, since the reflective LCD employs external light as the light source, the display cannot be seen without external light. However, unlike the transmissive LCD, the power consumption by the light source is very low and the power consumption is very low. If the surroundings are bright, sufficient contrast can be obtained. However, this reflection type LCD has a problem that it is insufficient in comparison with a transmission type in terms of general display quality such as color reproducibility and display luminance.

  On the other hand, reflective LCDs with lower power consumption than transmissive LCDs are advantageous in situations where the demand for lower power consumption of devices is further strengthened, so attempts have been made to adopt them for high-definition monitor applications in portable devices. R & D is being conducted to improve display quality.

  FIG. 8 shows a planar structure (first substrate side) per pixel of a conventional active matrix reflective LCD having a thin film transistor (TFT) for each pixel. FIG. 8 shows a schematic cross-sectional structure of a reflective LCD at a position along line CC.

  The reflective LCD is configured such that a liquid crystal layer 300 is sealed between a first substrate 100 and a second substrate 200 which are bonded to each other with a predetermined gap. As the first and second substrates 100 and 200, a glass substrate, a plastic substrate, or the like is used. At least in this example, a transparent substrate is used as the second substrate 200 disposed on the observation surface side.

  A thin film transistor (TFT) 110 is formed for each pixel on the liquid crystal side surface of the first electrode 100. A data line 136 for supplying a data signal to each pixel is connected to, for example, a drain region of the active layer 120 of the TFT 110 via a contact hole formed in the interlayer insulating film 134. 134 and a contact hole formed so as to penetrate the planarization insulating film 138, the pixel is connected to a first electrode (pixel electrode) 150 formed in an individual pattern for each pixel.

  As the first electrode 150, Al, Ag or the like having a reflection function is used, and an alignment film 160 for controlling the initial alignment of the liquid crystal layer 300 is formed on the reflection electrode 150.

  In the case of a color display device, a color filter (R, G, B) 210 is formed on the liquid crystal side of the second substrate 200 disposed opposite to the first substrate 100. ITO is used as a second electrode on the color filter 210. A transparent electrode 250 using a transparent conductive material such as (Indium Tin Oxide) is formed. On the transparent electrode 250, an alignment film 260 similar to that on the first substrate side is formed.

  The reflective LCD has the above-described configuration, and performs a desired display by controlling the amount of light incident on the liquid crystal panel, reflected by the reflective electrode 150, and again emitted from the liquid crystal panel for each pixel. .

  The LCD is not limited to the reflective type, and the liquid crystal is driven with an AC voltage to prevent burn-in. In the transmissive LCD, both the first electrode on the first substrate and the second electrode on the second substrate are required to be transparent, and both employ ITO as an electrode material. Therefore, when the liquid crystal is AC driven, the first and second electrodes can apply positive and negative voltages to the liquid crystal under substantially the same conditions.

  However, as shown in FIG. 9, in a reflective LCD using a reflective electrode made of a metal material as the first electrode 150 and a transparent electrode made of a transparent metal oxide material such as ITO as the second electrode 250, depending on driving conditions, In some cases, display flickering or liquid crystal burn-in problems occur. This is remarkable, for example, when the liquid crystal is driven at a critical flicker frequency (CFF) or less recently reported. The driving below CFF is a liquid crystal driving frequency (≈ liquid crystal (liquid crystal capacitance) in each pixel formed in a region facing the first and second electrodes for the purpose of further reducing power consumption in the LCD. The data write frequency) is lower than CHz that can be perceived as flicker by human eyes, for example, 40 Hz to 30 Hz, for example, lower than 60 Hz, which is standard in the NTSC standard. However, when each pixel of the conventional reflective liquid crystal panel is driven at such a frequency below CFF, it has been found that the above flicker and liquid crystal burn-in problems become prominent and cause a significant decrease in display quality. .

  As a result of the applicant's research on the causes of flicker and liquid crystal burn-in of the reflective LCD as shown in FIGS. 8 and 9, these are the electrical properties of the first and second electrodes for the liquid crystal layer 300 as described above. It has been found that this asymmetry is one of the causes. This asymmetry is that the work function of a transparent metal oxide such as ITO used for the second electrode 250 is about 4.7 eV to 5.2 eV, whereas the work of a metal such as Al used for the first electrode 150 is about. This is considered to be due to the large difference between the functions of about 4.2 eV to 4.3 eV. The difference in work function causes a difference in charge actually induced at the liquid crystal interface via the alignment films 160 and 260 when the same voltage is applied to each electrode. Then, due to the difference in charge induced at the liquid crystal alignment film interface, impurity ions and the like in the liquid crystal layer are biased toward one electrode, and as a result, a residual DC voltage is accumulated in the liquid crystal layer 300. The lower the driving frequency of the liquid crystal, the greater the influence of the residual DC on the liquid crystal and the more noticeable flicker and liquid crystal burn-in occur. In particular, driving below CFF was practically difficult. .

As a reflection type LCD, a structure in which ITO is used for the first second electrode like a transmission type LCD and a reflection plate is separately provided outside the first substrate (on the side not facing the liquid crystal) is conventionally known. Yes. However, when a reflecting plate is provided outside the first substrate, the optical path length is increased by the thickness of the transparent first electrode 150 and the transparent first substrate, and display quality is likely to deteriorate due to parallax. Therefore, reflective LCDs for display applications that require high display quality use reflective electrodes as pixel electrodes, and if the drive frequency is lowered as described above, flicker or the like occurs, so that it is driven to reduce power consumption. The frequency could not be reduced.

  In order to solve the above-described problems, the present invention provides a display with a reflective function that matches the electrical characteristics of the first and second electrodes with respect to the liquid crystal layer, has no influence of flicker and parallax, has high display quality, and low power consumption. The object is to realize the device.

  In order to achieve the above object, the present invention provides a display device configured to display each pixel, in which a liquid crystal layer is sealed between a first substrate including a first electrode and a second substrate including a second electrode. The first substrate is further formed on a switch element provided for each pixel and on the insulating film covering the switch element so as to be insulated from the switch element, and is incident on the liquid crystal layer from the second substrate side. The first electrode is made of a transparent conductive material formed directly covering the reflective layer, and is electrically connected to the switch element.

  As described above, on the first substrate side, the transparent first electrode having the same characteristics as the second electrode of the second substrate is disposed on the liquid crystal layer side, and the lower layer of the first electrode is an interlayer insulating film or A liquid crystal layer is driven with good symmetry by the first electrode and the second electrode by disposing a reflective layer formed on an insulating film such as a planarizing insulating film and insulated from the switch element of each pixel. Can do. In particular, even when the driving frequency of the liquid crystal layer in each pixel is set lower than 60 Hz, for example, high quality display is possible without causing flicker.

  In another aspect of the present invention, in the display device, a connection metal layer is formed in a contact hole formed in the insulating film covering the switch element, and the switch element and the first electrode include It is electrically connected through a metal layer for connection.

  In another aspect of the present invention, in the above display device, the connection metal layer is made of a refractory metal material at least on the contact surface with the first electrode.

  In another aspect of the present invention, in the display device, the work function of the transparent conductive material of the first electrode and the transparent conductive material of the second electrode formed on the liquid crystal layer side of the second substrate. The difference from the work function is 0.5 eV or less.

  In another aspect of the present invention, there is provided a method for manufacturing a display device configured by enclosing a liquid crystal layer between a first substrate having a transparent first electrode and a second substrate having a transparent second electrode. Forming a thin film transistor on the first substrate, forming at least one insulating film covering the thin film transistor, forming a contact hole in a region of the insulating film corresponding to an active layer of the thin film transistor, and forming the contact hole region A connection metal layer is formed, a reflective material layer is formed over the insulating film and the connection metal layer, and patterning is performed so that the material layer remains in a predetermined pixel region except on the connection metal layer. Forming a reflective layer, covering the reflective layer and the connecting metal layer, forming a first electrode made of a transparent conductive material, and attaching the first electrode to the thin film transistor via the connecting metal layer. The gas to be connected.

  Thus, in the configuration in which the first electrode is disposed on the liquid crystal side, by interposing the connecting metal layer between the thin film transistor and the first electrode, the patterning of the reflective layer formed below the first electrode, It is possible to prevent deterioration of the electrode and active layer of the thin film transistor, and it is possible to reliably connect the first electrode formed on the reflective layer and the thin film transistor.

  In the present invention, even when it is necessary to form a projecting layer on one substrate side as in the case of a reflective or transflective LCD, the first electrode and the second electrode having equivalent characteristics are connected to the liquid crystal layer. Can be placed in the same position. Therefore, the liquid crystal can be AC driven with good symmetry. For this reason, even when the driving frequency of the liquid crystal is set to CFF or less, for example, high-quality display can be performed without flickering and without causing burn-in.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments (hereinafter referred to as embodiments) of the invention will be described with reference to the drawings.

  FIG. 1 is a part of a planar configuration on the first substrate side of a reflective active matrix LCD as a reflective LCD according to the present embodiment, and FIG. 2 is a schematic cross section of the LCD at a position along the line AA in FIG. The configuration is shown. In an active matrix LCD, a plurality of pixels are provided in a matrix in a display area, and a switch element such as a TFT is provided for each pixel. The switch element is formed for each pixel on one of the first and second substrates, for example, the first substrate 100 side, and a pixel electrode (first electrode) 50 formed in an individual pattern is connected to the switch element.

  A transparent substrate such as glass is used for the first and second substrates 100 and 200, and a color filter 210 is provided on the second substrate 200 side facing the first substrate 100 in the case of a color type as in the conventional case. The second electrode 250 made of a transparent conductive material is formed on the color filter 210. As the transparent conductive material of the second electrode 250, IZO (Indium Zinc Oxide), ITO, or the like is employed. In the active matrix type, the second electrode 250 is formed as a common electrode for each pixel. Further, an alignment film 260 made of polyimide or the like is formed on the second electrode 250.

  In contrast to the second substrate side having the above-described configuration, in the present embodiment, an electrode structure is adopted so that the electrical characteristics of the liquid crystal layer 300 on the first substrate side are aligned. Specifically, as shown in FIG. 2, a material having a work function similar to that of the second electrode 250 instead of the conventional reflective metal electrode, that is, an IZO or the like, is directly below the alignment film on the first substrate 100. The first electrode 50 made of the same transparent conductive material as the second electrode 250 such as ITO is formed. In order to obtain a reflective LCD, a reflective layer 44 that reflects incident light from the second substrate side is formed below the first electrode 50.

  The material used as the first electrode 50 is the same as the material of the second electrode 250, so that an electrode having the same work function is disposed with respect to the liquid crystal layer 300 through the alignment films 60 and 260. Therefore, the liquid crystal layer 300 can be AC driven with very good symmetry by the first electrode 50 and the second electrode 250. However, the first electrode 50 and the second electrode 250 may be approximated as long as the liquid crystal layer 300 can be driven with good symmetry even if their work functions are not completely the same. For example, if the difference between the work functions of both electrodes is about 0.5 eV or less, even if the liquid crystal drive frequency is CFF or less as described above, high-quality display is possible without flicker or liquid crystal burn-in. It becomes possible.

  As the first electrode 50 and the second electrode 250 that satisfy such conditions, for example, IZO (work function 4.7 eV to 5.2 eV) is used for the first electrode 50 and ITO (work function 4.7 eV) is used for the second electrode 250. -5.0 eV), or vice versa, and in selecting the material, select the material to be used for each electrode in consideration of process characteristics such as transmittance, patterning accuracy, manufacturing cost, etc. Also good.

  As the reflection layer 44, a material having excellent reflection characteristics such as Al, Ag, and an alloy thereof (Al—Nd alloy in this embodiment) is used at least on the surface side (liquid crystal layer side). The reflective layer 44 may be a single layer of a metal material such as Al, but a refractory metal layer such as Mo may be provided as a base layer in contact with the planarization insulating film 38. By forming such a base layer, the adhesion between the reflective layer 44 and the planarization insulating film 38 is improved, so that the reliability of the element can be improved. In the configuration of FIG. 2, an inclined surface having a desired angle is formed in each pixel region of the planarization insulating film 38, and a reflective layer 44 is laminated so as to cover the planarization insulating film 38. A similar slope is formed on the surface of the layer 44. If such an inclined surface is formed at an optimum angle and position, it is possible to collect and emit external light for each pixel. For example, it is possible to improve the display brightness at the front position of the display. is there. Of course, such an inclined surface does not necessarily exist.

  The reflection layer 44 is made of a conductive material such as Al as described above, but the first electrode 50 laminated on the reflection layer 44 and the reflection layer 44 are electrically insulated. The reason for the insulation is that when IZO, ITO, or the like is used as the material of the first electrode 50, these are formed by sputtering. That is, the reflective layer 44 made of Al or the like is exposed to a sputtering atmosphere, so that an oxidation reaction occurs on the surface and the reflective layer 44 is covered with a natural oxide film. Therefore, in the present embodiment, the reflective layer 44 is not used as the first electrode for driving the liquid crystal unlike the conventional reflective LCD, and the transparent conductive layer formed on the reflective layer 44 is the first electrode. 50 is used to apply a voltage corresponding to the display content to the liquid crystal layer 300.

  Recently, a so-called transflective LCD having both a light transmissive function and a reflective function has been proposed. As in the transmissive LCD, a pixel electrode such as ITO is formed first. A configuration is known in which a reflective electrode such as Al is laminated so as to cover a partial region of the transparent electrode. In such a transflective LCD, if a transparent electrode layer / reflective electrode layer are sequentially laminated from the substrate side, the two electrode layers are electrically connected to function as one pixel electrode. However, as described above, since the reflective electrode is disposed on the liquid crystal layer side, there is a problem that the liquid crystal layer 300 cannot be driven with good symmetry due to the work function difference from the second electrode. Furthermore, in order to improve electrical symmetry, it may be possible to reverse the stacking order of the electrodes. However, as described above, Al and Ag-based metal materials used for the reflective electrode are naturally oxidized on the surface. Films are easily formed, especially after these metal layers are formed, the surface is covered with a natural oxide film by being exposed to sputtering for forming a transparent conductive material layer, and the metal layer and the transparent electrode are insulated. End up. Therefore, the liquid crystal cannot be driven by the transparent electrode on the first substrate side simply by changing the stacking order of the electrodes. As a result, the electrical characteristics of the liquid crystal on the first substrate side and the second substrate side are changed. It cannot be aligned.

  In contrast, in the present embodiment, the reflective layer 44 is insulated from both the first electrode 50 and the TFT 110, and the connection metal layer 42 is disposed between the first electrode 50 and the TFT 110 (for example, the source electrode 40 of the TFT 110). Therefore, the first electrode 50 and the TFT 110 can be reliably connected. Similarly to the second substrate side, the liquid crystal can be driven by the first electrode 50 made of a transparent conductive material disposed in the vicinity of the liquid crystal layer on the first substrate side.

Here, the conditions required for the metal layer 42 employed in this embodiment to connect the first electrode 50 and the TFT 110 are (i) electrical connection with the first electrode 50 made of IZO, ITO, or the like. (Ii) When the TFT 110 is provided with a source electrode 40 such as Al as shown in FIG. 2, it can be electrically contacted with the source electrode 40, and when the source electrode 40 is omitted, a semiconductor (here In the case of polycrystalline silicon) it can be electrically connected to the active layer,
(Iii) When the reflective layer 44 is patterned into individual shapes for each pixel, the reflective layer 44 is not removed by the etching solution;
Etc. As such a metal layer 42, it is preferable to use a refractory metal material such as Mo, Ti, or Cr.

  Hereinafter, a structure for reliably connecting the first electrode 50 and the corresponding TFT 110 as in this embodiment, and a manufacturing method for realizing this structure will be described.

  As the TFT 110, a top gate type is adopted, and as the active layer 20, polycrystalline silicon (p-Si) obtained by polycrystallizing amorphous silicon (a-Si) by laser annealing is used. Of course, the TFT 110 is not limited to the top gate type p-Si, but may be a bottom gate type, or a-Si may be employed for the active layer. Impurities doped in the source / drain regions 20s and 20d of the active layer 20 of the TFT 110 may be either n-conductivity type or p-conductivity type. In this embodiment, n-type impurity such as phosphorus is doped and n− A ch-type TFT 110 is employed.

  The active layer 20 of the TFT 110 is covered with a gate insulating film 30, and a gate electrode 32 made of Cr or the like and also serving as a gate line is formed on the gate insulating film 30. Then, after the gate electrode 32 is formed, the active layer 20 is doped with the impurity by using the gate electrode as a mask to form source and drain regions 20s and 20d, and a channel region 20c not doped with the impurity. Next, an interlayer insulating film 34 is formed so as to cover the entire TFT 110, and a contact hole is formed in the interlayer insulating film 34. After that, an electrode material is formed, and each of the p-Si active layers is formed through the contact hole. A source electrode 40 is connected to the source region 20s of the layer 20, and a drain electrode 36 is connected to the drain region 20d. In the present embodiment, the drain electrode 36 also serves as a data line for supplying a data signal corresponding to display contents to each TFT 110. On the other hand, the source electrode 40 is connected to a first electrode 50 that is a pixel electrode, as will be described later.

  After the source electrode 40 and the drain electrode 36 are formed, a planarization insulating film 38 made of a resin material such as an acrylic resin is formed so as to cover the entire surface of the substrate, and a contact hole is formed in a region where the source electrode 40 is formed. A metal layer 42 is formed, and the source electrode 40 and the metal layer 42 are connected. When Al or the like is used as the source electrode 40, a metal material such as Mo is used as the metal layer 42, so that the connection with the source electrode 40 becomes a good ohmic contact. As shown in FIG. 3, the source electrode 40 can be omitted. In this case, the metal layer 42 is in contact with the silicon active layer 20 of the TFT 110. Ohmic contact can be established with various semiconductor materials.

  After the connection metal layer 42 is laminated and patterned, an Al—Nd alloy or a material having excellent reflection characteristics such as Al constituting the reflection layer 44 is laminated on the entire surface of the substrate by vapor deposition or sputtering. The laminated reflective material is etched away so as not to remain in the vicinity of the source region of the TFT 110 (the formation region of the metal layer 42) so as not to prevent at least the contact between the metal layer 42 and the first electrode 50 to be formed later. A reflective layer 44 having a pattern as shown in FIG. 1 is formed on each pixel. In the present embodiment, in order to prevent the TFT 110 (particularly the channel region 20c) from being irradiated with light and to generate a leakage current, and to make the reflective region (that is, the display region) as wide as possible, As shown in FIG. 1, the layer 44 is also actively formed in the region above the channel of the TFT 110.

When the reflective layer 44 is patterned, the metal layer 42 made of Mo or the like has a sufficient thickness (for example, 0.2 μm) and a sufficient resistance to the etching solution. Therefore, even after the reflective layer 44 on the metal layer 42 is removed by etching, the metal layer 42 can remain in the contact hole without being completely removed. In many cases, the source electrode 40 and the like are made of the same material (Al or the like) as that of the reflective layer 44. Corrosion causes disconnection and the like. However, by providing the metal layer 42 as in this embodiment, it is possible to withstand the patterning of the reflective layer 44 and maintain a good electrical connection with the source electrode 40.

  After patterning the reflective layer 44, a transparent conductive layer is laminated by sputtering so as to cover the entire surface of the substrate including the reflective layer 44. Here, as described above, the surface of the reflective layer 44 made of Al or the like is covered with an insulating natural oxide film (see reference numeral 46 in FIG. 3) at this time, but refractory metals such as Mo are exposed to the sputtering atmosphere. When exposed, the surface is not oxidized. Therefore, the metal layer 42 exposed in the contact region can be in ohmic contact with the transparent conductive layer for the first electrode laminated on the metal layer 42. The transparent conductive layer is patterned into an independent shape for each pixel as shown in FIG. 1 after film formation, whereby a pixel electrode (first electrode) 50 is obtained. Further, after the first electrode 50 is formed in each pixel region, an alignment film 60 made of polyimide or the like is formed so as to cover the entire surface of the substrate, and the first substrate side is completed. Thereafter, the second substrate 200 formed up to the alignment film 260 and the first substrate 100 are separated from each other by a predetermined gap and bonded together at the peripheral portion of the substrate, and liquid crystal is sealed between the substrates to obtain a liquid crystal display device.

  As shown in FIG. 4, the metal layer 42 of the present embodiment has good connection with the source electrode 41 even when the source electrode 41 has a multilayer structure in which an Al layer is sandwiched between refractory metal layers such as Mo. Can be maintained. The source electrode 41 shown in FIG. 4 (the same applies to the drain electrode 37 that also serves as a data line) is configured by laminating an Mo layer 41a / Al layer 41b / Mo layer 41c in this order from the active layer 20 side. The Mo layer 41a is formed on the active layer 20 side so that Si atoms are prevented from moving into the Al layer 41b to cause defects in the active layer, and the Mo layer 41c is the uppermost layer. By being formed, it is possible to maintain good electrical connection with the metal layer 42 even after contact formation and the formation / etching process of the metal layer 42. Of course, in the present embodiment, Mo or the like similar to that of the uppermost layer of the source electrode 41 is used as the metal layer 42, and therefore the contact with the source electrode 41 as shown in FIG.

  Further, the metal layer 42 of the present embodiment may have a multilayer structure like the source electrode 41 shown in FIG. As such a multilayer structure of the metal layer 42, for example, a refractory metal layer such as Mo / a conductive layer such as Al / a three-layer structure of a refractory metal layer such as Mo or a conductive layer / Mo such as Al in order from the lower layer. A two-layer structure of a refractory metal layer such as can be adopted. When such a multilayer metal layer 42 is employed, the source electrode 40 disposed below may have the multilayer structure as shown in FIG. 4 or a single layer structure such as Al. Also good. Further, when the metal layer 43 is in direct contact with the active layer 20 as shown in FIG. 3, the same three-layer or two-layer structure as described above can be adopted as the metal layer 43. In any case, the metal layers 42 and 43 need to withstand the etching of the reflective layer 44 and maintain stable and electrical connection characteristics without forming an insulating film on the surface when the first electrode 50 is formed. It is preferable that a refractory metal layer is formed at least on the surface side in contact with the first electrode 50.

  Next, a transflective LCD will be described. In the above description, the reflective LCD in which the reflective layer 44 is formed in almost the entire area of one pixel region has been described as an example. However, the present invention can be applied not only as a reflection type but also to a transflective LCD.

FIG. 5 shows a planar configuration per pixel of such a transflective active matrix LCD, and FIG. 6 shows a schematic cross-sectional configuration of the LCD at a position along the line BB in FIG. In the reflective LCD shown in FIGS. 1 and 2, the reflective layer 44 is formed in almost all of one pixel region (excluding the contact region with the TFT). On the other hand, in the transflective LCD as shown in FIGS. 5 and 6, the reflective region in which the reflective layer 44 and the transparent first electrode 50 are laminated in one pixel and the reflective layer 44 are removed, and the transparent first A light transmission region in which only one electrode 50 exists is formed.

  Also in such a transflective LCD, the first electrode 50 is disposed closer to the liquid crystal layer than the reflective layer 44, and the reflective layer 44 is insulated by the first electrode 50 and the natural oxide film 46 formed immediately above the reflective layer 44. In addition, the TFT 110 and the first electrode 50 are removed from this region so as not to interfere with the contact. Therefore, also in this transflective LCD, the liquid crystal layer 300 can be AC driven with good symmetry with the alignment film interposed between the first electrode 50 and the second electrode 250 having approximate work functions, and the ambient light By switching the light source according to the intensity or the like, either reflective display or transmissive display can be performed.

  Although the reflective or transflective LCD including the reflective layer 44 has been described above, the configuration of the switch element (TFT), the connecting metal layer, the reflective layer, and the transparent first electrode according to the present invention is applied to an EL display. Thus, the reflective function can be provided below the transparent first electrode, and the first electrode and the lower TFT can be reliably connected. FIG. 7 shows a partial cross-sectional structure of each pixel of the active matrix EL display according to this embodiment.

  The element employed in the EL display of FIG. 7 is an organic EL element 90 using an organic compound as a light emitting material, and an organic element layer 88 is formed between an anode 80 and a cathode 86. The organic element layer 88 includes a light emitting layer 83 containing at least an organic light emitting functional molecule, and can be constituted of a single layer structure, two layers, three layers or more multilayer structures depending on the characteristics of the organic compound, the emission color, and the like. In the example of FIG. 7, the organic element layer 88 includes a hole transport layer 82 / a light emitting layer 83 / an electron transport layer 84 formed in this order from the anode 80 side disposed on the substrate side 100. Similarly, an individual pattern is formed for each pixel, and the hole transport layer 82 and the electron transport layer 84 are formed in common for all pixels like the cathode 86. For the purpose of insulating each anode 80 between adjacent pixels and preventing a short circuit with the upper cathode 86 in the edge region of the anode 80, a planarizing insulating film 39 is formed in the region between the anodes of adjacent pixels. ing.

  In the organic EL element 90 configured as described above, holes injected from the anode 80 and electrons injected from the cathode 86 are recombined in the light emitting layer 83 to excite organic light emitting molecules, which return to the ground state. When light is emitted. As described above, the organic EL element 90 is a current-driven light-emitting element, and the anode 80 needs to have a sufficient hole injection capability for the organic element layer 88, and has a high work function such as ITO or IZO. Conductive materials are often used. Therefore, in many cases, the light from the light emitting layer 83 is transmitted to the outside through the transparent substrate 100 from the transparent anode 80 side. However, in the active matrix organic EL display shown in FIG. 7, light can be emitted from the cathode side.

  In the display of FIG. 7, the TFT 110 for driving the organic EL element 90, the metal layer 42, the reflective layer 44, and the anode 80 of the organic EL element 90 are, for example, the TFT 110 as shown in FIG. The same configuration as that of the metal layer 42, the reflective layer 44, and the first electrode 50 is employed. Therefore, in the case where a transparent conductive material is used for the anode 80, a reflective layer 44 made of a material having excellent reflection characteristics such as Al or Al—Nd alloy insulated from the anode 80 is provided below the anode 80. Can do. For this reason, as the anode 86 of the organic EL element 90, a transparent conductive material such as ITO or IZO is used similarly to the anode 80, or a metal material such as Al or Ag is thin enough to transmit light. Thus, a top emission type structure in which light from the light emitting layer 83 is emitted from the cathode 86 side to the outside can be easily realized. That is, as shown in FIG. 7, since the reflective layer 44 is disposed below the anode 80, the light traveling toward the anode 80 is reflected by the reflective layer 44, and eventually the light obtained by the light emitting layer 83 is converted. It becomes possible to emit from the cathode 86 side.

It is a figure which shows the schematic planar structure by the side of the 1st board | substrate of the active matrix type reflective LCD which concerns on embodiment of this invention. It is a figure which shows schematic sectional structure of the reflection type LCD in the position along the AA line of FIG. It is a figure which shows the other schematic cross-sectional structure of the reflection type LCD in the position along the AA line of FIG. It is a figure which shows the other schematic cross-sectional structure of the reflection type LCD in the position along the AA line of FIG. 1 is a diagram showing a schematic plan configuration of a first substrate side of an active matrix transflective LCD according to an embodiment of the present invention. It is a figure which shows schematic sectional structure of the transflective LCD in the position along the BB line of FIG. It is a figure which shows schematic sectional structure of the active matrix type organic electroluminescent display of this invention. It is a figure which shows the partial planar structure by the side of the 1st board | substrate in the conventional active matrix type reflection type LCD. It is a figure which shows schematic sectional structure of the conventional reflection type LCD in the position along CC line | wire of FIG.

Explanation of symbols

20 active layer (p-Si layer), 30 gate insulating film, 32 gate electrode (gate line), 34 interlayer insulating film,
36, 37 Drain electrode (data line), 38, 39 Planarization insulating film, 40, 41
Source electrode,
42, 43 Metal layer for connection, 44 Reflective layer, 46 Natural oxide film, 50 First electrode, 60, 260 Alignment film,
80 anode (first electrode), 82 hole transport layer, 83 light emitting layer, 84 electron transport layer, 86
Cathode (second electrode),
88 organic element layer, 90 organic EL element, 100 first substrate, 110 TFT, 200
A second substrate,
210 color filter, 250 second electrode, 300 liquid crystal layer.

Claims (6)

A first electrode and a second electrode formed on the first substrate;
A display device configured to display each pixel, which includes an organic element layer formed between the first electrode and the second electrode;
The first substrate further includes:
A switch element provided for each of the pixels;
A reflective layer for reflecting light from the organic element layer;
The display device, wherein the first electrode is made of a material capable of transmitting light, and is electrically connected to the switch element. The display device according to claim 1,
The display device characterized in that the light-transmitting material is thinned aluminum or thinned silver. The display device according to claim 1 or 2,
The display device, wherein the first electrode has an opening. The display device according to claim 1,
The display device, wherein the light transmissive material is ITO or IZO. The display device according to any one of claims 1 to 4,
The display device, wherein the first electrode is formed to cover the reflective layer. A first electrode and a second electrode formed on the first substrate;
A method of manufacturing a display device configured to display each pixel, which is configured by an organic EL element formed between the first electrode and the second electrode,
Forming a thin film transistor on the first substrate;
Forming an insulating film covering the thin film transistor;
Forming a contact hole in a region of the insulating film corresponding to an active layer of the thin film transistor;
Forming a metal layer for connection in the contact hole region;
A reflective material layer is formed covering the insulating film and the connection metal layer, and a reflective layer is formed by patterning so that the reflective material layer remains in a predetermined pixel region except on the connection metal layer,
Forming a first electrode made of a material capable of transmitting light so as to cover the reflective layer and the connection metal layer, and the first electrode is electrically connected to the thin film transistor through the connection metal layer; A display device manufacturing method.

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