JP2007012709A - Semiconductor inspection device, and inspection method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor inspection device capable of shortening a test time. <P>SOLUTION: A semiconductor inspection device 100 comprises: a plurality of probe cards 2 comprising a bi-movable contact probe 12 of which a contact piece 10 is provided on a lower side and a pad 11 which is electrically conductive to the contact piece 10 is provided on an upper side; a wafer holding part 3 for holding stacked semiconductor wafers 1; a contact pressure applier 4 for applying a pressure from above the top probe card 2; a bottom probe card board 5 arranged below a bottom probe card 2; and a contact tester for testing conductive state from the pad 11 of the top probe card 2 to the contact piece 10 of the bottom probe card 2. If the contact test judges that there is no conduction, the pressure is applied from the upper surface side of the top probe card 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor inspection apparatus that performs an electrical test of a semiconductor device formed on a semiconductor wafer and a semiconductor device inspection method.

  When manufacturing a semiconductor integrated circuit, it is essential to conduct an electrical characteristic test of the integrated circuit during the manufacturing process. In this test, it is necessary to provide a transmission path for transmitting a test signal between the wafer on which the integrated circuit is manufactured and an external semiconductor test apparatus. The transmission line has a contact at the tip, and this contact is brought into contact with a connection terminal on the integrated circuit, thereby supplying a test signal generated by an external semiconductor test apparatus to the integrated circuit. In recent years, there has been a demand for more efficient testing due to circuit miniaturization and higher integration.

  Here, the conventional semiconductor test apparatus includes a signal transmission unit for transmitting and receiving a test signal, a probe card for supplying a signal of the signal transmission unit to the evaluation wafer, a signal transmission unit and a probe card. Some include an interface provided between them for improving coplanarity and a chuck for fixing the evaluation wafer (see, for example, Patent Document 1).

In the above-described conventional technology, measurement is performed in a unit in which pad coordinates of one chip expressed as a reticle are repeatedly arranged for several tens of chips on a certain part of one wafer. Therefore, in order to measure one evaluation wafer, it is necessary to repeat the contact several times and measure the entire evaluation wafer. Further, for example, it is necessary to repeat the same test for a plurality of wafers on which similar integrated circuits in the same lot are formed. Thus, there is a problem that the time required for the test is simply increased by the number of times of measurement and the efficiency of the test cannot be achieved.
US Patent Application Publication No. 2002/0163349

  SUMMARY OF THE INVENTION The present invention solves the above-described problems, and enables more reliable input / output of signals for performing a functional test of a semiconductor device on a plurality of semiconductor wafers, thereby shortening a test time. An object of the present invention is to provide a simple semiconductor inspection apparatus.

In the semiconductor inspection apparatus according to one aspect of the present invention, a contact is provided on the lower side so as to be electrically connected to and through the inspection through hole that penetrates the semiconductor wafer. A plurality of probe cards having contact probes provided with pads for receiving other contacts disposed on the top and electrically conducting,
On the semiconductor wafer, the probe card is arranged so that the contact penetrates the inspection through-hole portion of the semiconductor wafer, and a set of the probe card and the semiconductor wafer is combined with a pad portion of the probe card. And a wafer holding part for holding the stacked semiconductor wafers so as to receive the contacts of other probe cards to be placed thereon.

According to another aspect of the present invention, there is provided a method for inspecting a semiconductor device comprising: a probe card having a contact probe provided with a contact on the lower side and a pad portion electrically connected to the contact on the upper side; Arranged on the semiconductor wafer so as to penetrate through and through the contact to the inspection through-hole portion of the semiconductor inspection apparatus formed on the wafer,
The probe card and semiconductor wafer set are stacked so that the pad portion of the probe card receives contacts of other probe cards to be disposed above it,
Each of the stacked semiconductor wafers is held,
Test the conduction state from the pad portion of the uppermost stacked probe card to the contact of the lowermost probe card,
When contact between the pad portion of the uppermost probe card and the contact of the lowermost probe card is not conducted by the contact test, pressure is applied from above the probe card. To do.

  According to the semiconductor inspection apparatus according to one aspect of the present invention, the semiconductor wafers and the probe cards are alternately stacked, and signal input / output can be performed collectively for the semiconductor devices of the stacked semiconductor wafers. In addition, the function test can be performed in parallel on the semiconductor device of each semiconductor wafer, and the test time can be shortened.

  Embodiments to which the present invention is applied will be described below with reference to the drawings.

  FIG. 1 is a cross-sectional view showing an overall configuration of a semiconductor inspection apparatus according to Embodiment 1 of the present invention, and FIG. 2 is a cross-sectional view showing a main configuration of the semiconductor inspection apparatus according to Embodiment 1 of the present invention. . FIG. 3 is a cross-sectional view and a plan view showing the main configuration of the probe card of the semiconductor inspection apparatus according to Embodiment 1 of the present invention. FIG. 4 is a cross-sectional view showing the main configuration of both movable contact probes (pogo pins) of the semiconductor inspection apparatus according to Embodiment 1 of the present invention.

  As shown in FIG. 1, a semiconductor inspection apparatus 100 is laminated with a probe card 2 for applying a signal for inspecting electrical characteristics of a semiconductor device (not shown) provided on a semiconductor wafer 1. A wafer holding unit 3 for holding the semiconductor wafer 1, a contact pressure application device 4 disposed above the stacked uppermost probe card 2, and applying pressure from above the probe card 2, A lowermost probe card board 5 disposed below the lowermost probe card 2, a contact test driver 6 for generating a signal for contact test and inputting it to the uppermost probe card 2, A contact test comparator 7 connected to the lowermost probe card substrate 5 and receiving a signal passing through the stacked probe cards 2; Connected to Bukado 2, a wafer unit test comparator 8 for a contact test, the wafer unit.

  The semiconductor wafer 1 has a thickness of, for example, about 70 μm to 80 μm, and is formed so that a through-hole portion 9 for inspection for inputting / outputting a signal for inspecting a semiconductor device passes therethrough. The inspection through-hole portion 9 has a diameter of about 100 μm, for example. Further, for example, a conductive film such as Al is formed on the inner surface and the upper portion of the inspection through-hole portion 9 and is electrically connected to the semiconductor device. This inspection through-hole portion 9 forms a hole structure by etching a general semiconductor wafer, for example, forms a conductive film such as Al on the inner surface and upper portion of the hole, and scrapes the semiconductor wafer from the back surface. It can be formed by penetrating the hole.

  Note that the inspection through-hole portion 9 may be formed in the area of the semiconductor device, or may be formed outside the area so as to be separated from the semiconductor device by dicing.

  As shown in FIGS. 1 and 2, the probe card 2 is provided with a contact 10 for contacting and penetrating the inspection through-hole portion 9 on the lower side, and is electrically connected to the contact 10. A pad portion 11 for receiving another contact 10 disposed on the upper side has both movable contact probes 12 provided on the upper side.

  The contact 10 is a hook-shaped probe needle composed of a needle-like portion 10a and a lid-like portion 10b. This needle-like portion 10 a transmits an electrical signal to the pad portion 11. The lid portion 10b is in contact with and supported by the upper portion of the inspection through-hole portion 9 and is electrically connected. The contact 10 is made of, for example, a conductive material such as tungsten, and can be in contact with and electrically connected to the inspection through hole 9. Moreover, the pad part 11 consists of conductive materials, such as gold | metal | money, for example, and can be electrically connected with the contactor 10 arrange | positioned at the upper part. A predetermined force is applied to each pad portion 11 from the contact 10.

  Further, the probe card 2 is provided with an outer peripheral contactor 13 for connection to the wafer unit test comparator 8. As shown in FIG. 3, the outer peripheral contactor 13 is connected to and electrically connected to both movable contact probes 12 by wiring 2a. The pad portions 11 of both movable contact probes 12 are arranged in accordance with the pattern 2b of the semiconductor device to be inspected.

  Further, a relay 18 is connected to the outer contactor 13 as schematically shown in FIG. Further, the relay 18 is wired via the outer contactor 13 of the probe card 2 adjacent to the top and bottom of the probe card 2 to which the relay 18 is connected and another relay 18. By switching the relay 18, the semiconductor wafer 1 having a defective contact is routed around. That is, the probe card 2 arranged above and below the semiconductor wafer 1 without using the contacts 10 of the two movable contact probes 12 of the probe card 2 arranged on the semiconductor wafer 1 with contact failure as a signal transmission path. Wiring (path detouring treatment) can be performed so that the two movable contact probes 12 to transmit the above signal are electrically connected.

  Then, in order to transmit the signal output from the contact test driver 6 to all the semiconductor wafers 1, the probe card 2 has the contact holes 10 formed on the semiconductor wafers 1 through the inspection through holes 9 of the semiconductor wafers 1. It arrange | positions so that it may penetrate. The set of the probe card 2 and the semiconductor wafer 1 is laminated so that the pad portion 11 of the probe card 2 receives the contact 10 of the other probe card 2 to be disposed above. The distance between the laminated semiconductor wafer 1 and the probe card 2 is adjusted to, for example, about 300 μm.

  Here, as shown in FIG. 4, both movable contact probes 12 are fixed to the main body of the probe card 2, and the outer cylinder 15 that supports the spring portion 14 that is an elastic body, and the contact 10 are connected to the lower surface side. The spring part 14 is connected to the upper surface side, the lower inner cylinder 16 that can slide up and down in the outer cylinder 15, the pad part 11 is connected to the upper surface side, and the spring part 14 is connected to the lower surface side. And an upper inner cylinder 17 slidable up and down in the outer cylinder 15. The lower inner cylinder 16 and the upper inner cylinder 17 can slide up and down, so that the coplanarity of the probe card 2 can be absorbed. Moreover, the spring part 14, the outer cylinder 15, the lower inner cylinder 16, and the upper inner cylinder 17 are formed of a conductive material so that a predetermined electrical signal can be transmitted. The contact probe 12 may be movable only at least on one side of the contact 10 or the pad portion 11.

  The wafer holding unit 3 holds the stacked semiconductor wafers 1 as described above.

  The lowermost probe card substrate 5 receives the contact 10 of the lowermost probe card 2 and outputs a signal transmitted through the contact 10 to the contact test comparator 7.

  The contact test comparator 7 outputs a signal transmitted from the contact test driver 6 and transmitted through the stacked probe cards 2, that is, based on an output signal of the lowermost probe card substrate 5, and Test continuity from pad to bottom probe card contacts. The contact test driver 6 and the contact test comparator 7 constitute a contact test apparatus.

  When it is determined by the contact test that the pad portion 11 of the uppermost probe card 2 and the contact 10 of the lowermost probe card 2 are not conductive, the contact pressure applying device 4 A pressure is applied from the upper surface side of the probe card 2.

  The wafer unit test comparator 8 makes contact with the pad unit 11 in wafer units based on the input of the signal output from the contact test driver 6 and transmitted to the pad unit 11 via the probe card 2 stacked on the upper part. A contact test with the child 10 is performed. The wafer unit test comparator 8 and the contact test driver 6 constitute a wafer unit contact test apparatus. The wafer unit test comparator 8 can detect whether or not the contact test driver 6 and the pad portion 11 are electrically connected when connected to the uppermost probe card 2. It has become.

  Next, a method for inspecting a semiconductor device by the semiconductor inspection apparatus 100 having the above configuration will be described. Here, in this inspection method, in order to perform a functional test on the semiconductor devices of the stacked semiconductor wafers in parallel, as a previous step, each probe card 2 transmits a signal to the inspection through hole connected to each semiconductor device. In the case where there is a contact failure, measures for improving the contact failure are implemented. Furthermore, when the contact failure is not improved even by the improvement measures, it is possible to perform a function inspection of the semiconductor device of another semiconductor wafer that is routed and laminated around the semiconductor wafer having the contact failure. is there.

  Hereinafter, the inspection method will be described with reference to the drawings. FIG. 5 is a flowchart showing the semiconductor device inspection method according to the first embodiment which is an aspect of the present invention.

  First, the probe card 2 is disposed on the semiconductor wafer 1 so that the contact 10 contacts and penetrates the inspection through hole 9 of the semiconductor inspection apparatus formed on the semiconductor wafer 1 (step S1).

  Next, the set of the probe card 2 and the semiconductor wafer 1 is laminated so that the pad portion 11 of the probe card 2 receives the contact 10 of the other probe card 2 to be disposed above (step S2).

  After step S2, the stacked semiconductor wafers 1 are respectively held by the wafer holding unit 3 (step S3). These semiconductor wafers 1 are fixed at positions positioned so as not to apply a load to the contacts 10 of the probe card 2.

  A contact test is performed on the conduction state from the pad portion 11 of the stacked uppermost probe card 2 to the contact 10 of the lowermost probe card 2 (step S4). Whether the contact test is normally detected by the contact test comparator 7 by transmitting the contacts 10 and the pads 11 of all the probe cards 2 on which the output signals of the contact test driver 6 are stacked. It is implemented by determining whether or not. As a cause of the contact failure, for example, the inspection through-hole portion 9 is not normally opened, and the inspection through-hole portion 9 caused by an aluminum film formation failure during the manufacturing process of the semiconductor device is used. There may be a case where the contact 10 cannot penetrate normally due to clogging of aluminum.

  If no contact failure is detected by the contact test in step S4, a functional test is performed on the semiconductor devices of the stacked semiconductor wafers 1 in parallel. In the function test for each semiconductor device, for example, signals for the function test are input / output from the pad portion 11 of the uppermost probe card 2, the probe card substrate 5 for the lowermost portion, and the outer periphery contactor 13 of each probe card. Is implemented.

  On the other hand, when it is determined by the contact test in step S4 that the pad portion 11 of the uppermost probe card 2 and the contact 10 of the lowermost probe card 2 are not conductive, the contact pressure applying device 4 Thus, pressure is applied from above the uppermost probe card 2 (step S5). The application of pressure by the contact pressure applying device 4 is performed so as to gradually increase to a value that does not damage the semiconductor wafer 1 and the probe card 2. As a result, pressure is transmitted from the contact 10 of the uppermost probe card 2 by the pad portion 11 and the contact 10 that slide elastically up and down of the movable contact probes 12 stacked below. For example, when the contact 10 normally passes through the inspection through-hole portion 9, the contact failure with the pad portion 11 in which the contact failure has occurred is improved.

  After applying pressure from the upper surface side of the uppermost probe card 2 in step S5, the contact test is performed again by the contact test device (step S6).

  If no contact failure is detected by the contact test in step S6, a functional test is performed on the semiconductor devices of the stacked semiconductor wafers 1 in parallel.

  On the other hand, if it is determined that the pad portion 11 of the uppermost probe card 2 and the contact 10 of the lowermost probe card are not conducting, the contact unit 10 and the pad are contacted by the wafer unit testing apparatus. The conduction state of the unit 11 is tested (step S7).

  The relay 18 is switched between the two movable contact probes 12 having the contacts 10 determined not to be conductive by the test and the two movable contact probes 12 having the pads 11 to be conductive with the contacts 10. Thus, route detour processing is performed (step S8). As a result, it is possible to perform a function inspection of the semiconductor device of another semiconductor wafer 1 that is routed and laminated around the semiconductor wafer 1 having a defective contact.

  Here, FIG. 6 is a cross-sectional view and a wiring diagram showing the configuration of the main part of the semiconductor inspection apparatus shown in FIG. As shown in FIG. 6, for example, since the inspection through-hole portion 9 is not normally opened in the semiconductor wafer 1a and the semiconductor wafer 1b, the contact 19a and the pad portion 20a are not electrically connected, resulting in a contact failure 21. In this case, the relay 18a is left as it is, the relay 18b is switched, and the outer peripheral contactors 13 of the upper and lower two probe cards 2 sandwiching the semiconductor wafer 1a are wired. As a result, as described above, it is possible to perform a function inspection of the semiconductor device of another stacked semiconductor wafer 1.

  As described above, according to the semiconductor inspection apparatus according to the present embodiment, the semiconductor wafer and the probe card are alternately stacked, and signal input / output can be performed collectively for the semiconductor devices of the stacked semiconductor wafers. Even if, for example, there is an abnormality in the opening of the inspection through hole formed in the semiconductor wafer and the stacked probe cards are not electrically connected, the upper surface of the uppermost probe card 2 Applying pressure from the side improves contact failure and enables batch signal input / output for semiconductor devices, so functional tests can be performed in parallel on the semiconductor devices of each stacked semiconductor wafer, and the test time Can be shortened.

  Even if the contact failure is not improved, at least for each semiconductor device formed on the remaining semiconductor wafer, a functional test is performed by wiring the probe card so as to bypass the semiconductor wafer having the contact failure. It is possible to enable input / output of signals for.

  In the first embodiment, the case where the contact for contacting and penetrating the inspection through-hole portion of the semiconductor device penetrating the semiconductor wafer is a hook-shaped probe needle has been described. Another configuration will be described.

  FIG. 7 is a cross-sectional view showing a main configuration of a semiconductor inspection apparatus according to Embodiment 2 of the present invention. FIG. 8 is a cross-sectional view showing the main configuration of both movable contact probes of the semiconductor inspection apparatus according to the second embodiment of the present invention. In the figure, the same reference numerals as those in the first embodiment indicate the same configurations as those in the first embodiment, and other configurations not shown are the same as those in the first embodiment.

  As shown in FIG. 7, the contact 22 is a conical probe needle. The top portion 22a of the conical probe needle contacts the pad portion 11 and transmits an electrical signal. Further, the conical surface 22b of the conical probe needle is in contact with and supported by the upper part of the inspection through-hole portion 9 and is electrically conductive. Further, the contact 22 is made of, for example, a conductive material such as tungsten, and can be in contact with and electrically connected to the inspection through hole 9.

  Here, as shown in FIG. 8, both movable contact probes 23 are fixed to the main body of the probe card 2, and the outer cylinder 15 that supports the spring portion 14 that is an elastic body, and the contact 22 are connected to the lower surface side. The spring part 14 is connected to the upper surface side, the lower inner cylinder 16 that can slide up and down in the outer cylinder 15, the pad part 11 is connected to the upper surface side, and the spring part 14 is connected to the lower surface side. And an upper inner cylinder 17 slidable up and down in the outer cylinder 15. By allowing the lower inner cylinder 16 and the upper inner cylinder 17 to slide up and down, the vertical coplanarity of the probe card 2 can be absorbed.

  As described above, according to the semiconductor inspection apparatus according to the present embodiment, as in the first embodiment, functional tests can be performed in parallel on the semiconductor devices of the stacked semiconductor wafers, and the test time can be shortened. Can be achieved.

  In the second embodiment, the case where the contact for passing through and penetrating through the inspection through-hole portion of the semiconductor device penetrating the semiconductor wafer is a conical probe needle has been described. In particular, a configuration in which a groove is formed in the conical probe needle which is the contact will be described.

  FIG. 9 is a cross-sectional view showing the main configuration of both movable contact probes of the semiconductor inspection apparatus according to Embodiment 3 of the present invention. FIG. 10 is a cross-sectional view of the contacts of the both movable contact probes of FIG. In the figure, the same reference numerals as those in the embodiment indicate the same configurations as those in the first embodiment, and other configurations not shown are the same as those in the first embodiment.

  As shown in FIG. 9, both movable contact probes 25 are fixed to the main body of the probe card 2, and an outer cylinder 15 that supports a spring portion 14 that is an elastic body and a contact 24 are connected to the lower surface side. The spring part 14 is connected to the upper surface side, the lower inner cylinder 16 slidable up and down in the outer cylinder 15, the pad part 11 is connected to the upper surface side, and the spring part 14 is connected to the lower surface side, and the outer cylinder 15 and an upper inner cylinder 17 that can slide up and down in the interior.

  The contact 24 is a conical probe needle. The top 24a of the conical probe needle contacts the pad portion 11 and transmits an electrical signal. In addition, grooves 25 extending radially from the top 24a are formed on the conical surface 24b of the conical probe needle. By this groove 25, the contact resistance is lowered by scrubbing, and the contact property with the inspection through-hole portion 9 is improved. The contactor 24 is made of a conductive material such as tungsten, for example, as in the above-described embodiments, and is in contact with and electrically connected to the inspection through hole 9.

  As described above, according to the semiconductor inspection apparatus according to the present embodiment, as in the first embodiment, functional tests can be performed in parallel on the semiconductor devices of the stacked semiconductor wafers, and the test time can be shortened. Can be achieved. Furthermore, since a groove is formed in the conical surface of the conical probe needle as a contact to improve the contact property with the through hole for inspection, the function test can be performed more reliably.

  In the above embodiment, the application of pressure from the upper surface of the uppermost probe card at the stage where the probe card and the semiconductor wafer are laminated is not mentioned, but the laminated semiconductor wafer is not laminated. Of course, a higher pressure may be applied when a contact failure is detected in a subsequent contact test after the holding.

  In the above embodiments, the spring portion is used as the elastic body of both movable contact probes. However, it is a matter of course that the same function and effect can be obtained with other elastic mechanisms. is there.

It is sectional drawing which shows the whole structure of the semiconductor inspection apparatus which concerns on Example 1 which is 1 aspect of this invention. It is sectional drawing which shows the principal part structure of the semiconductor inspection apparatus of the semiconductor inspection apparatus of FIG. It is sectional drawing and a top view which show the principal part structure of the probe card of the semiconductor inspection apparatus of FIG. It is sectional drawing which shows the principal part structure of the both movable contact probe of the semiconductor inspection apparatus of FIG. It is a flowchart which shows the inspection method of the semiconductor device which concerns on Example 1 which is 1 aspect of this invention. It is. It is sectional drawing which shows the structure of the principal part of the semiconductor inspection apparatus which concerns on Example 2 which is 1 aspect of this invention. It is sectional drawing which shows the structure of the principal part of both the movable contact probes of FIG. It is sectional drawing which shows the structure of the principal part of the both movable contact probe of the semiconductor inspection apparatus which concerns on Example 3 which is 1 aspect of this invention. It is sectional drawing which shows the principal part structure of the contactor of both the movable contact probes of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Probe card 3 Wafer holding part 4 Contact pressure application apparatus 5 Bottom probe card board 6 Contact test driver 7 Contact test comparator 8 Wafer unit test comparator 9 Inspection through-hole part 10 Contact 10a Needle shape Part 10b lid-like part 11 pad part 12 both-movable contact probe (pogo pin)
13 Outer contactor 14 Spring part 15 Outer cylinder 16 Lower inner cylinder 17 Upper inner cylinder 18, 18a, 18b Relay 19 Contact 20 Pad part 21 Contact failure 22 Contact 22a Top 22b Conical surface 23 Both movable contact probes (pogo pins)
24 Contact 24a Top 24b Conical surface 25 Groove 100 Semiconductor inspection device

Claims (5)

On the lower side, there is provided a contact for conducting and penetrating through the inspection through-hole portion penetrating the semiconductor wafer. On the upper side, there is another contact disposed on the upper side while being electrically connected to this contact. A plurality of probe cards having contact probes provided with pad portions for receiving the contacts;
On the semiconductor wafer, the probe card is arranged so that the contact penetrates the inspection through-hole portion of the semiconductor wafer, and a set of the probe card and the semiconductor wafer is combined with a pad portion of the probe card. A semiconductor inspection apparatus comprising: a wafer holding section for stacking the contacts of other probe cards to be placed thereon and holding the stacked semiconductor wafers. A contact pressure application device for applying pressure from above the probe card, which is disposed above the uppermost stacked probe card;
A lowermost probe card board for receiving the contact of the probe card, disposed below the stacked lowermost probe card;
A contact test device for testing a conduction state from the pad portion of the uppermost probe card to the contact of the lowermost probe card;
The semiconductor inspection apparatus according to claim 1, further comprising: A wafer unit test apparatus for performing a contact test between the pad unit and the contact in units of the wafer,
The semiconductor inspection apparatus according to claim 2, further comprising: A probe card having a contact probe provided with a contact on the lower side and a pad portion electrically connected to the contact on the upper side is formed as a through hole for inspection of a semiconductor inspection device formed on a semiconductor wafer. Arranged on a semiconductor wafer so as to penetrate through and contact the contactor,
The probe card and semiconductor wafer set are stacked so that the pad portion of the probe card receives contacts of other probe cards to be disposed above it,
Each of the stacked semiconductor wafers is held,
Test the conduction state from the pad portion of the uppermost stacked probe card to the contact of the lowermost probe card,
When contact between the pad portion of the uppermost probe card and the contact of the lowermost probe card is not conducted by the contact test, pressure is applied from above the probe card. A method for inspecting a semiconductor device. After applying pressure from the upper surface side of the uppermost probe card, the contact test is performed again,
If it is determined that there is no conduction between the pad portion of the uppermost probe card and the contact of the lowermost probe card, test the conduction state of each contact and the pad portion,
5. The method of inspecting a semiconductor device according to claim 4, wherein a contact probe having a contact determined to be non-conductive and a contact probe having a pad portion to be electrically connected to the contact are wired.

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